Integrated X-ray measurement for hybrid bonding process control in ultra-high 3D integration.

Abstract

The hybrid bonding apparatus comprises a hybrid bonder having a bonder head and configured to bond a first semiconductor structure to a second semiconductor structure via a hybrid bond. The hybrid bonding apparatus also comprises an X-ray probe having an X-ray source and a detector. The bonder head is positioned in a measurement gap between the X-ray source and the detector, or in a measurement space facing both the X-ray source and the detector. The X-ray probe is configured to measure the relative positions of the first and second semiconductor structures by irradiating them with X-rays that penetrate all or part of them. The hybrid bonder is configured to align the first and second semiconductor structures based on their relative positions.

Claims

1. A hybrid bonding method, wherein the method is The first bonding surface of the first semiconductor structure is positioned at a first distance from the second bonding surface of the second semiconductor structure, wherein the first bonding surface of the first semiconductor structure faces the second bonding surface of the second semiconductor structure. The relative positions of the first bonding surface and the second bonding surface at the first distance are measured via an X-ray probe, Bringing the first joint surface and the second joint surface closer together to a second distance shorter than the first distance, The relative positions of the first and second bonding surfaces at the second distance are measured via the X-ray probe, Based on the X-ray images of the first bonding surface and the second bonding surface, the relative positions of the first semiconductor structure and the second semiconductor structure are adjusted. The first joining surface and the second joining surface are brought into physical contact, The first semiconductor structure and the second semiconductor structure are joined via a hybrid junction. Methods that include...

2. After the hybrid bonding, the bonding interface between the first semiconductor structure and the second semiconductor structure is analyzed via the X-ray probe. The method according to claim 1, further comprising:

3. Perform defect analysis of at least one interface defect selected from the group consisting of voids, gaps, delamination, foreign matter, cracks, abnormal copper pad size, missing pads, and misalignment via the aforementioned X-ray probe. The method according to claim 2, further comprising:

4. Adjusting the relative positions of the first semiconductor structure and the second semiconductor structure is The out-of-plane inclination is removed based on the relative positions of the first and second joining surfaces at the first and second distances, such that the first and second joining surfaces are parallel to each other. The method according to claim 1, including the method described in claim 1.

5. To remove at least one in-plane misalignment selected from the group consisting of translational misalignment and rotational misalignment. The method according to claim 4, further comprising:

6. After removing the out-of-plane inclination, the relative positions of the first and second bonding surfaces at the second distance are remeasured via the X-ray probe. Based on the remeasurement, remove the at least one in-plane misalignment. The method according to claim 5, further comprising:

7. After removing the out-of-plane inclination, the first joint surface and the second joint surface are brought closer to a third distance that is shorter than the second distance. The relative positions of the first and second bonding surfaces at the third distance are measured via the X-ray probe, Based on the relative positions of the first and second joining surfaces at the third distance, the at least one in-plane misalignment is eliminated. The method according to claim 5, further comprising:

8. Removing at least one relative strain from the group consisting of barrel strain and pincushion strain. The method according to claim 4, further comprising:

9. The relative positions of the first bonding surface and the second bonding surface are measured in real time via the X-ray probe. The method according to claim 1, further comprising:

10. (a) Bringing the first joint surface and the second joint surface closer together, (b) Adjusting the relative positions of the first semiconductor structure and the second semiconductor structure based on real-time X-ray images or real-time non-imaging X-ray measurement signals of the first and second bonding surfaces located at a shorter distance than the above, Repeating (a) and (b) until the first joining surface and the second joining surface are brought into physical contact. The method according to claim 9, further comprising:

11. The method according to claim 1, wherein the X-ray probe is configured to irradiate the first semiconductor structure and the second semiconductor structure with X-rays that penetrate all or part of them.

12. The X-ray probe includes at least one selected from the group consisting of an X-ray imaging system and an X-ray non-imaging system. The X-ray imaging system is configured to generate images of the first and second junction surfaces via at least one mechanism selected from the group consisting of scintillation, direct X-ray imaging, X-ray absorption imaging, X-ray phase contrast imaging, X-ray interference fringe difference imaging, and small-angle scattering dark-field imaging. The method according to claim 11, wherein the X-ray non-imaging system is configured to generate an X-ray measurement signal via at least one mechanism selected from the group consisting of X-ray diffraction, X-ray absorption, small-angle X-ray scattering (SAXS), wide-angle X-ray scattering (WAXS), near-edge absorption X-ray fine structure analysis (NEXAFS), near-edge absorption X-ray spectroscopy (XANES), total external reflection X-ray fluorescence analysis (TXRF), X-ray K-edge difference method, X-ray standing wave analysis, and X-ray reflectivity.

13. The second semiconductor structure is loaded into the measurement space and aligned, The first semiconductor structure is attached to the bonder head of the hybrid bonder, Aligning the first semiconductor structure and the second semiconductor structure using alignment marks via electromagnetic radiation other than X-rays. The method according to claim 1, further comprising:

14. The method according to claim 13, wherein the measurement space is the measurement gap between the X-ray source of the X-ray probe and the detector of the X-ray probe, or is arranged facing the X-ray source of the X-ray probe and facing the detector of the X-ray probe.

15. The first semiconductor structure includes a die, a wafer, a plurality of stacked dies, or a plurality of stacked thinned wafers. The method according to claim 1, wherein the second semiconductor structure includes a die or a wafer.

16. A method for joint inspection, wherein the method is To provide a bonding structure including a first semiconductor structure and a second semiconductor structure bonded to each other via a bonding interface, The bonding structure is irradiated with X-rays configured to penetrate the bonding structure, To generate an X-ray image or X-ray measurement signal of the junction interface via at least one mechanism selected from the group consisting of scintillation, direct X-ray imaging, X-ray absorption imaging, X-ray phase contrast imaging, X-ray interference fringe difference imaging, small-angle scattering dark-field imaging, X-ray diffraction, X-ray absorption, small-angle X-ray scattering (SAXS), wide-angle X-ray scattering (WAXS), near-edge absorption X-ray fine structure analysis (NEXAFS), near-edge absorption X-ray spectroscopy (XANES), total external reflection X-ray fluorescence analysis (TXRF), X-ray K-edge difference method, X-ray standing wave analysis, and X-ray reflectivity. Methods that include...

17. Using the X-ray image or X-ray measurement signal of the bonding interface, perform defect analysis of at least one interface defect selected from the group consisting of voids, gaps, delamination, foreign matter, cracks, abnormal copper pad size, missing pads, and misalignment. The method according to claim 16, further comprising:

18. A hybrid bonder equipped with a bonder head and configured to bond a first semiconductor structure to a second semiconductor structure via a hybrid junction, An X-ray probe equipped with an X-ray source and a detector In a hybrid bonding device equipped with, The bonder head is positioned in the measurement gap between the X-ray source and the detector, or in a measurement space facing both the X-ray source and the detector. The X-ray probe is configured to measure the relative positions of the first semiconductor structure and the second semiconductor structure by irradiating them with X-rays that penetrate all or part of the first semiconductor structure and the second semiconductor structure. A hybrid bonding apparatus in which the hybrid bonder is configured to align the first semiconductor structure and the second semiconductor structure based on the relative positions of the first semiconductor structure and the second semiconductor structure.

19. Between the scintillator of the detector and a subsequent optical imaging train selected from the group consisting of an objective lens, a bandpass filter, a tube lens or relay lens, and a sensor, there is an objective lens having a bent path for photoelectromagnetic radiation. The hybrid bonding apparatus according to claim 18, further comprising the following:

20. Hybrid debonder Furthermore, The hybrid bonding apparatus according to claim 18, wherein the hybrid debonder is configured to measure the misalignment between the first semiconductor structure and the second semiconductor structure based on the relative positions of the first semiconductor structure and the second semiconductor structure.

21. The X-ray source is spatially coherent and includes at least one of a single monocapillary, a single polycapillary, a 1D or 2D array of monocapillaries, a 1D or 2D array of polycapillaries, a 1D or 2D array of X-ray spots, a 1D or 2D array of laser spots focused on a flow of liquid anode or an array of liquid anodes, a 1D or 2D array of micropatterned carbon nanotubes (CNTs) that interact with a metal target to form an array of X-ray spots, a 1D or 2D array of electron emitters fitted to an array of solid or liquid metal anodes to form a 1D or 2D array of X-ray spots, or a dispenser cathode large-area electron emitter or low-temperature field large-area electron emitter or optical cathode large-area electron emitter that are focused on an array of solid or liquid metal anodes to form a 1D or 2D array of X-ray spots. The monocapillary or polycapillary is of the focusing or collimating type. The hybrid bonding apparatus according to claim 20.

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