Crystal rod growth method and crystal rod growth apparatus
The method stabilizes the solid-liquid interface in crystal pulling by using controlled magnetic fields to suppress convection and promote uniform oxygen precipitation, addressing the instability caused by silicon molten convection and ensuring consistent single-crystal quality.
JP2026520598APending Publication Date: 2026-06-23XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
- Filing Date
- 2023-12-04
- Publication Date
- 2026-06-23
AI Technical Summary
Technical Problem
The uncertainty in silicon molten convection during crystal pulling leads to unstable solid-liquid interfaces, affecting the uniformity of oxygen in the crystal rod and potentially causing defects or loss of single-crystal characteristics.
Method used
A crystal rod growth method using a single crystal furnace with controlled horizontal and cusp magnetic fields to stabilize the solid-liquid interface, where the horizontal magnetic field strength is adjusted to suppress convection and the cusp magnetic field is positioned to promote uniform oxygen precipitation.
Benefits of technology
Stabilizes the solid-liquid interface, enhances oxygen uniformity in the crystal rod, and prevents defects, ensuring consistent single-crystal quality.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2026520598000001_ABST
Abstract
This disclosure discloses a crystal rod growth method for growing a crystal rod using a single crystal furnace, the single crystal furnace comprising a crucible for containing a silicon molten liquid, the crystal rod growth method comprising the steps of: immersing a seed crystal in the silicon molten liquid and pulling up the crystal to form a crystal rod, applying a horizontal magnetic field with a magnetic field strength of a first preset value, growing the crystal rod with constant diameter, and applying a cusp magnetic field with a magnetic field strength of a third preset value, wherein, in the axial direction of the crystal rod, the first distance in the axial direction of the crystal rod between the maximum Gauss plane of the horizontal magnetic field and the liquid surface of the silicon solution is smaller than a second preset value, and the zero magnetic field plane of the cusp magnetic field is located at the R-arc portion of the crucible. This disclosure further discloses a crystal rod growth apparatus.
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