Method for producing high resistivity single crystal silicon with reduced shot resistivity variation and high resistivity single crystal silicon

Abstract

The application discloses a preparation method of high-resistivity single crystal silicon with reduced shooting resistivity deviation, which comprises the following steps: S0, preparing a master alloy crystal bar with high resistance and uniform radial resistivity; S1, preparing a master alloy crystal ingot; S2, obtaining a standby master alloy crystal ingot; S3, preparing a special master alloy wafer; S4, calculating the doping amount corresponding to each batch of special master alloy wafers; S5, selecting and weighing the special master alloy wafer; and S6, doping and drawing.

Description

Technical Field

[0001] This invention relates to the field of single crystal manufacturing technology, and in particular to a method for preparing high resistivity single crystal silicon with reduced target resistivity deviation and high resistivity single crystal silicon. Background Technology

[0002] The resistivity of single-crystal silicon is one of the key parameters determining the performance of IGBTs (Inductively Coupled Biological Transformers) in power semiconductor devices. Therefore, with the rapid development of industries such as new energy electric vehicles and photovoltaic power generation, the market demand for high-resistivity single-crystal silicon is becoming increasingly urgent. Currently, the preparation of high-resistivity single-crystal silicon usually involves doping a trace amount of master alloy wafers (phosphorus-doped master alloy) into the silicon melt. In existing technologies, ingots cut from other red phosphorus crystal rods as waste are usually selected to prepare master alloy wafers. During preparation, the master alloy ingot is usually first cut into coarse slices, then mechanically polished, and cleaned with a conventional cleaning solution to obtain master alloy wafers. Then, the resistivity of the master alloy wafers is measured using a four-probe method. Master alloy wafers with resistivity deviations within a set range are placed in the same batch, and the average resistivity of this batch of master alloy wafers is marked. Then, the amount of master alloy wafers to be doped is calculated based on the doping formula and the average resistivity of the master alloy wafers. Finally, the calculated doping amount is weighed and added.

[0003] In the above process, firstly, during material selection, since the selected ingots are cut from other red phosphorus crystal rods, the uniformity of their radial resistivity cannot be guaranteed; secondly, during resistivity measurement, due to the surface condition of the master alloy wafer and the four-probe contact measurement, there are measurement errors; thirdly, when calculating the doping amount, the uniformity of the resistivity of the master alloy wafer itself and the accuracy of the master alloy wafer resistivity measurement will have a significant impact on the accuracy of the doping amount calculation. If the resistivity uniformity of the master alloy wafer itself is poor, or the error in the master alloy wafer resistivity measurement is large, the error in calculating the doping amount will be further amplified; fourthly, due to the use of master alloy crystals... The wafers are relatively lightweight, and during weighing, the traditional method of using tweezers to handle them can lead to drops and residues, causing inaccurate weighing. Fifth, because the amount of doped master alloy wafers is very small, minor residues or splashes during the placement process result in a significant deviation between the actual doping amount and the required doping amount, ultimately causing a large discrepancy between the actual and target resistivity of the prepared monocrystalline silicon. Therefore, finding a systematic solution that can synergistically reduce the cumulative errors throughout the entire process of "master alloy wafer preparation-measurement-calculation-weighing-placement" and reduce the deviation between the actual and target resistivity of monocrystalline silicon has become an urgent technical challenge. Summary of the Invention

[0004] In view of this, it is necessary to provide a method for preparing high resistivity monocrystalline silicon with reduced target resistivity deviation and high resistivity monocrystalline silicon, so as to synergistically reduce the cumulative error of the entire process of "master alloy wafer preparation-measurement-calculation-weighing-dispensing" in the preparation of high resistivity monocrystalline silicon, thereby reducing the deviation between the actual target resistivity and the target target resistivity of high resistivity monocrystalline silicon and improving the yield of high resistivity monocrystalline silicon.

[0005] According to one aspect of the present invention, a method for preparing high resistivity single-crystal silicon with reduced target resistivity deviation is provided, comprising the following steps:

[0006] S0. Preparing a master alloy ingot with high resistance and uniform radial resistivity, specifically including:

[0007] Heavy red phosphorus doped crystal rods were produced by Czochralski pulling method, with a red phosphorus doping amount of 30-50g and a crystal rotation of 12-15rpm in the constant diameter stage, to obtain a master alloy crystal rod with high resistance and uniform radial resistivity.

[0008] S1. Preparation of master alloy ingots, specifically including:

[0009] The above-mentioned master alloy crystal rod is cut into segments to obtain multiple segments of master alloy crystal ingots;

[0010] S2. Obtain spare master alloy ingots, specifically including:

[0011] The resistivity of the head and tail of each segment of the master alloy ingot was measured using the four-probe method to determine the radial resistivity deviation range of each segment of the master alloy ingot. The master alloy ingot whose radial resistivity deviation range meets the preset value of radial resistivity deviation was selected as the spare master alloy ingot.

[0012] S3. Fabrication of a dedicated master alloy wafer, specifically including:

[0013] Using the aforementioned spare master alloy ingots, at least one batch of dedicated master alloy wafers is obtained by sequentially slicing, two-step polishing, cleaning with a specific formula, and non-contact measurement, and the average resistivity of each batch of dedicated master alloy wafers is marked; wherein, the average resistivity of each batch of dedicated master alloy wafers is not less than 0.01 Ω·cm, and the resistivity deviation between batches of dedicated master alloy wafers is not greater than 1%;

[0014] The specific formula cleaning process includes: first, cleaning the two-step polished master alloy wafer with a cleaning solution of HF:H2O2:DIW=1:2:10 at 25°C for 10 minutes, then rinsing with ultrapure water, and finally drying with nitrogen.

[0015] S4. Calculate the doping amount corresponding to each batch of dedicated master alloy wafers, specifically including:

[0016] Based on the target resistivity of the pulled single crystal silicon and the average resistivity of each batch of special master alloy wafers, the doping amount corresponding to each batch of special master alloy wafers is obtained.

[0017] S5. Select and weigh the dedicated master alloy wafers, specifically including:

[0018] Based on the preset weight threshold of 1.5g, a batch of special master alloy wafers with a doping amount greater than the weight threshold were selected and weighed by vacuum adsorption.

[0019] S6. Adding and pulling, specifically including:

[0020] The weighed special master alloy wafer and silicon material in S5 are put into a crucible for single crystal pulling to obtain high resistivity single crystal silicon.

[0021] Preferably, in step S3, the two-step polishing specifically includes:

[0022] First, mechanically grind to Ra=0.08μm; then chemically mechanically polish to Ra=0.008μm.

[0023] Preferably, the non-contact measurement specifically includes: measuring the cleaned master alloy wafer using a non-contact eddy current resistivity meter.

[0024] Preferably, the radial resistivity deviation is preset to 0.5%-1%.

[0025] According to another aspect of the present invention, a high resistivity single crystal silicon is also provided, which is drawn by the high resistivity single crystal silicon preparation method for reducing the target resistivity deviation as described above.

[0026] The above-described method for preparing high-resistivity monocrystalline silicon with reduced target resistivity deviation, and the high-resistivity monocrystalline silicon itself, compared with existing technologies, reduce the target resistivity deviation of the pulled high-resistivity monocrystalline silicon step by step through the following synergistic scheme: First, a dedicated master alloy ingot is prepared, and a high-resistivity and radially uniform master alloy ingot is obtained by controlling the amount of red phosphorus doping and the crystal rotation during the equal-diameter stage. The high resistance of the master alloy ingot corresponds to a high doping amount, which reduces weighing errors and errors caused by doping losses during the weighing stage. A master alloy ingot with uniform radial resistivity improves the accuracy of subsequent measurements. Second, based on the above, a radial resistivity deviation range is set, and a master alloy ingot whose radial resistivity deviation range meets the preset value is used as a backup master alloy ingot, thereby improving the radial resistivity uniformity of the master alloy ingot. To improve the accuracy of subsequent measurements, the process involves slicing the wafers and then polishing them twice, followed by a specific cleaning formula to remove fuzz and impurities from the surface of the master alloy wafers. This further reduces subsequent measurement errors and makes the measurement results more accurate. Next, based on the accurate measurements and high doping levels, vacuum adsorption weighing is used to further reduce weighing errors. Finally, based on the accurate measurements and precise weighing, the relative error caused by splashing during doping is reduced because the doping level of the dedicated master alloy wafers exceeds the weight threshold. Compared with existing technologies, the above technical solution is tightly linked and synergistic in the entire process of "master alloy wafer preparation - measurement - calculation - weighing - doping," systematically reducing the cumulative error throughout the process, reducing the deviation between the actual target resistivity and the target target resistivity of high resistivity monocrystalline silicon, and improving the yield of high resistivity monocrystalline silicon. Attached Figure Description

[0027] Figure 1 This is a schematic flowchart of the method for preparing high resistivity single-crystal silicon to reduce the target resistivity deviation in this invention. Detailed Implementation

[0028] The technical solutions and effects of the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0029] This invention provides a method for preparing high resistivity single-crystal silicon with reduced target resistivity deviation, comprising the following steps:

[0030] S0. Preparing a master alloy ingot with high resistance and uniform radial resistivity, specifically including:

[0031] Heavy red phosphorus doped crystal rods were produced by Czochralski pulling method, with a red phosphorus doping amount of 30-50g and a crystal rotation of 12-15rpm in the constant diameter stage, to obtain a master alloy crystal rod with high resistance and uniform radial resistivity.

[0032] S1. Preparation of master alloy ingots, specifically including:

[0033] The above-mentioned master alloy crystal rod is cut into segments to obtain multiple segments of master alloy crystal ingots;

[0034] S2. Obtain spare master alloy ingots, specifically including:

[0035] The resistivity of the head and tail of each segment of the master alloy ingot was measured using the four-probe method to determine the radial resistivity deviation range of each segment of the master alloy ingot. The master alloy ingot whose radial resistivity deviation range meets the preset value of radial resistivity deviation was selected as the spare master alloy ingot.

[0036] S3. Fabrication of a dedicated master alloy wafer, specifically including:

[0037] Using the aforementioned spare master alloy ingots, at least one batch of dedicated master alloy wafers is obtained by sequentially slicing, two-step polishing, cleaning with a specific formula, and non-contact measurement, and the average resistivity of each batch of dedicated master alloy wafers is marked; wherein, the average resistivity of each batch of dedicated master alloy wafers is not less than 0.01 Ω·cm, and the resistivity deviation between batches of dedicated master alloy wafers is not greater than 1%;

[0038] The specific formula cleaning process includes: first, cleaning the two-step polished master alloy wafer with a cleaning solution of HF:H2O2:DIW=1:2:10 at 25°C for 10 minutes, then rinsing with ultrapure water, and finally drying with nitrogen.

[0039] S4. Calculate the doping amount corresponding to each batch of dedicated master alloy wafers, specifically including:

[0040] Based on the target resistivity of the pulled single crystal silicon and the average resistivity of each batch of special master alloy wafers, the doping amount corresponding to each batch of special master alloy wafers is obtained.

[0041] S5. Select and weigh the dedicated master alloy wafers, specifically including:

[0042] Based on the preset weight threshold of 1.5g, a batch of special master alloy wafers with a doping amount greater than the weight threshold were selected and weighed by vacuum adsorption.

[0043] S6. Adding and pulling, specifically including:

[0044] The weighed special master alloy wafer and silicon material in S5 are put into a crucible for single crystal pulling to obtain high resistivity single crystal silicon.

[0045] In this embodiment, the target resistivity deviation of the pulled high-resistivity monocrystalline silicon is reduced step by step through the following synergistic scheme. First, a dedicated master alloy ingot is prepared, and a master alloy ingot with high resistance and uniform radial resistivity is obtained by controlling the amount of red phosphorus doping and the crystal rotation in the equal diameter stage. The high resistance of the master alloy ingot corresponds to a high doping amount, which reduces weighing errors and errors caused by doping losses during the weighing stage. A master alloy ingot with uniform radial resistivity improves the accuracy of subsequent measurements. Second, based on the above, a radial resistivity deviation range is set, and a master alloy ingot whose radial resistivity deviation range meets the preset value is used as a backup master alloy ingot. This improves the radial resistivity uniformity of the master alloy ingot, thereby improving the accuracy of subsequent measurements. Then, on the above... Based on the above, the wafers are sliced ​​and polished twice, followed by a specific formula cleaning process to remove fuzz and impurities from the surface of the master alloy wafers after slicing, further reducing subsequent measurement errors and making the measurement results more accurate. Next, based on the above accurate measurements and high doping amounts, vacuum adsorption weighing is used to further reduce weighing errors. Finally, based on the above accurate measurements and precise weighing, since the doping amount of the special master alloy wafers is greater than the weight threshold, the relative error caused by splashing during doping is reduced. Compared with existing technologies, the above technical solution is closely linked and synergistic in the entire process of "master alloy wafer preparation - measurement - calculation - weighing - doping", systematically reducing the cumulative error of the entire process, reducing the deviation between the actual target resistivity and the target target resistivity of high resistivity monocrystalline silicon, and improving the yield of high resistivity monocrystalline silicon.

[0046] In this embodiment, when preparing the master alloy ingot, by setting the red phosphorus dosage to 30-50g, the average resistivity of the drawn master alloy ingot can be increased to about 0.01-0.02Ω·cm. Since a higher average resistivity corresponds to a higher dosage, this step directly prepares for obtaining a master alloy wafer with a higher dosage in the subsequent process. A higher dosage can reduce the error during weighing and placement, thus preparing for reducing the error during weighing and placement in the subsequent process. The crystal rotation speed in the equal diameter stage is set to 12-15rpm to improve the radial resistivity uniformity of the drawn master alloy ingot, so that the radial resistivity deviation of the subsequently prepared master alloy ingot is below 4%, preparing for accurate measurement in the subsequent process.

[0047] In this embodiment, the instrument used in the non-contact measurement is a non-contact eddy current resistivity meter. During slicing, the master alloy ingot is cut into coarse master alloy slices, which are then processed into master alloy wafers through a two-step polishing process. A specific cleaning solution with a formula of HF:H2O2:DIW=1:2:10 is used to clean the polished master alloy wafers at 25°C for 10 minutes, followed by rinsing with ultrapure water and finally drying with nitrogen. This ensures that the surface of the prepared master alloy wafer is sufficiently smooth, fundamentally eliminating the interference of the wafer surface condition on the measurement. In subsequent non-contact measurements, this ensures a constant distance between the measuring probe and the surface of the master alloy wafer, guaranteeing the stability of the measurement signal and the accuracy of the measurement results. Compared with existing technologies, the measurement error is reduced from 2-3% to within ±0.5%. The accuracy of the measurement results lays the foundation for the accuracy of subsequent calculations of the doping dosage.

[0048] In this embodiment, the equipment used for vacuum adsorption weighing is a vacuum adsorption weighing system with a PTEE suction head. By setting a weight threshold of 1.5g, the weight of the added master alloy wafer is not less than 1.5g, which prepares for reducing the weighing error during vacuum adsorption weighing. The absolute error during weighing is controlled within ±0.001g, and the relative error is reduced to below 0.1%. This also prepares for reducing the addition error in the subsequent addition process.

[0049] Furthermore, in step S3, the two-step polishing specifically includes:

[0050] First, mechanically grind to Ra=0.08μm; then chemically mechanically polish to Ra=0.008μm.

[0051] In this embodiment, the rough master alloy sheet is processed into a master alloy wafer through two-step polishing, and the Ra of the master alloy wafer after two-step polishing is set to make the surface condition of the master alloy wafer more suitable and improve the accuracy of subsequent measurements.

[0052] Furthermore, the non-contact measurement specifically includes: measuring the cleaned master alloy wafer using a non-contact eddy current resistivity meter.

[0053] Furthermore, the radial resistivity deviation is preset to 0.5%-1%.

[0054] The present invention also provides a high resistivity single crystal silicon, which is produced by pulling using any of the above-described methods for preparing high resistivity single crystal silicon to reduce target resistivity deviation.

[0055] The beneficial effects of the present invention will be described below with reference to specific comparative examples and embodiments.

[0056] Comparative Example

[0057] The master alloy wafers were prepared using ingots cut from other red phosphorus crystal rods. The process involved slicing, polishing once, and cleaning with a conventional cleaning solution. The average resistivity was then measured using a four-probe contact method, and the measured average resistivity is shown in Table 1. The corresponding doping amount is also shown in Table 1. Tweezers were used to handle the wafers during weighing, and then high-resistivity monocrystalline silicon with a target resistivity of 120 Ω·cm was pulled. The resistivity of the pulled monocrystalline silicon head was tested, and the actual head resistivity is shown in Table 1. The target resistivity deviation is also shown in Table 1.

[0058] Example 1 (Red phosphorus dosage was 30g, and crystal rotation in the isodiameter stage was 12rpm)

[0059] The method for preparing high-resistivity single-crystal silicon with a target resistivity of 120 Ω·cm, provided by this invention, is used to prepare the master alloy ingot. Specifically, when preparing the master alloy ingot, the amount of red phosphorus added is 30g, and the crystal rotation speed during the equal diameter stage is 12 rpm. When preparing the dedicated master alloy wafer, the master alloy ingot is sequentially sliced, polished in two steps, and cleaned. The two-step polishing specifically involves mechanical polishing to Ra=0.08μm followed by chemical polishing to Ra=0.008μm. The specific cleaning formula involves first using a cleaning solution of HF:H2O2:DIW=1:2:10 at 25°C to clean the two... After polishing, the master alloy wafer was cleaned for 10 minutes, then rinsed with ultrapure water, and finally dried with nitrogen. The resistivity of the special master alloy wafer was then obtained using a non-contact eddy current resistivity tester. The average resistivity is shown in Table 2, and the corresponding doping amount is also shown in Table 2. Weighing was performed using a vacuum adsorption weighing system with a PTEE suction head. The weighed special master alloy wafer and silicon material were put into a crucible for single crystal pulling to obtain high resistivity single crystal silicon. The resistivity of the pulled single crystal silicon head was tested, and the actual head resistivity is shown in Table 2. The target resistivity deviation is also shown in Table 2.

[0060] Example 2 (Red phosphorus dosage was 40g, and crystal rotation in the isodiameter stage was 13rpm)

[0061] The method for preparing high-resistivity single-crystal silicon with a target resistivity of 120 Ω·cm, provided by this invention, is used to prepare the master alloy ingot. Specifically, when preparing the master alloy ingot, the amount of red phosphorus added is 40 g, and the crystal rotation speed during the equal diameter stage is 13 rpm. When preparing the dedicated master alloy wafer, the master alloy ingot is sequentially sliced, polished in two steps, and cleaned. The two-step polishing specifically involves mechanical polishing to Ra = 0.08 μm, followed by chemical polishing to Ra = 0.008 μm. The specific cleaning formula involves first using a cleaning solution of HF:H₂O₂:DIW = 1:2:10 at 25°C to clean the two... After polishing, the master alloy wafer was cleaned for 10 minutes, then rinsed with ultrapure water, and finally dried with nitrogen. The resistivity of the special master alloy wafer was then obtained using a non-contact eddy current resistivity tester. The average resistivity is shown in Table 2, and the corresponding doping amount is also shown in Table 2. Weighing was performed using a vacuum adsorption weighing system with a PTEE suction head. The weighed special master alloy wafer and silicon material were put into a crucible for single crystal pulling to obtain high resistivity single crystal silicon. The resistivity of the pulled single crystal silicon head was tested, and the actual head resistivity is shown in Table 3. The target resistivity deviation is also shown in Table 3.

[0062] Example 3 (Red phosphorus dosage was 50g, and crystal transformation in the isodiameter stage was 15rpm)

[0063] The method for preparing high-resistivity single-crystal silicon with a target resistivity of 120 Ω·cm, provided by this invention, is used to prepare the master alloy ingot. Specifically, when preparing the master alloy ingot, the amount of red phosphorus added is 50 g, and the crystal rotation speed during the equal-diameter stage is 15 rpm. When preparing the dedicated master alloy wafer, the master alloy ingot is sequentially sliced, polished in two steps, and cleaned. The two-step polishing specifically involves mechanical polishing to Ra = 0.08 μm, followed by chemical polishing to Ra = 0.008 μm. The specific cleaning formula involves first using a cleaning solution of HF:H₂O₂:DIW = 1:2:10 at 25°C to clean the two... After polishing, the master alloy wafer was cleaned for 10 minutes, then rinsed with ultrapure water, and finally dried with nitrogen. The resistivity of the special master alloy wafer was then obtained using a non-contact eddy current resistivity tester. The average resistivity is shown in Table 2, and the corresponding doping amount is also shown in Table 2. Weighing was performed using a vacuum adsorption weighing system with a PTEE suction head. The weighed special master alloy wafer and silicon material were put into a crucible for single crystal pulling to obtain high resistivity single crystal silicon. The resistivity of the pulled single crystal silicon head was tested, and the actual head resistivity is shown in Table 4. The target resistivity deviation is also shown in Table 4.

[0064] In the above comparative examples and Examples 1-3, when calculating the average target resistivity deviation, the absolute value of the target resistivity deviation of each group is first taken, and then the sum of the absolute values ​​of the target resistivity deviation is divided by the number of groups to obtain the average target resistivity deviation.

[0065] Table 1

[0066]

[0067] Table 2

[0068]

[0069] Table 3

[0070]

[0071] Table 4

[0072]

[0073] As shown in Table 1, the target resistivity deviation of single-crystal silicon pulled using the master alloy wafer prepared by existing technology is 15.17%. As shown in Tables 2-4, the high resistivity single-crystal silicon preparation method with reduced target resistivity deviation provided by this invention systematically reduces the cumulative error of the entire process from "master alloy wafer preparation - measurement - calculation - weighing - delivery", resulting in a target resistivity deviation of less than 4% for the pulled single-crystal silicon. Compared with existing technologies, the high resistivity single-crystal silicon preparation method with reduced target resistivity deviation provided by this invention significantly reduces the target resistivity deviation and greatly improves the yield.

[0074] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the invention. Those skilled in the art will understand that implementing all or part of the above-described embodiments and making equivalent changes in accordance with the claims of the present invention are still within the scope of the invention.

Claims

1. A method for preparing high resistivity single-crystal silicon with reduced target resistivity deviation, characterized in that, Includes the following steps: S0. Preparing a master alloy ingot with high resistance and uniform radial resistivity, specifically including: Heavy red phosphorus doped crystal rods were produced by Czochralski pulling method, with a red phosphorus doping amount of 30-50g and a crystal rotation of 12-15rpm in the constant diameter stage, to obtain a master alloy crystal rod with high resistance and uniform radial resistivity. S1. Preparation of master alloy ingots, specifically including: The above-mentioned master alloy crystal rod is cut into segments to obtain multiple segments of master alloy crystal ingots; S2. Obtain spare master alloy ingots, specifically including: The resistivity of the head and tail of each segment of the master alloy ingot was measured using the four-probe method to determine the radial resistivity deviation range of each segment of the master alloy ingot. The master alloy ingot whose radial resistivity deviation range meets the preset value of radial resistivity deviation was selected as the spare master alloy ingot. S3. Fabrication of a dedicated master alloy wafer, specifically including: Using the aforementioned spare master alloy ingots, at least one batch of dedicated master alloy wafers is obtained by sequentially slicing, two-step polishing, cleaning with a specific formula, and non-contact measurement, and the average resistivity of each batch of dedicated master alloy wafers is marked; wherein, the average resistivity of each batch of dedicated master alloy wafers is not less than 0.01 Ω·cm, and the resistivity deviation between batches of dedicated master alloy wafers is not greater than 1%; The specific formula cleaning process includes: first, cleaning the two-step polished master alloy wafer with a cleaning solution of HF:H2O2:DIW=1:2:10 at 25°C for 10 minutes, then rinsing with ultrapure water, and finally drying with nitrogen. S4. Calculate the doping amount corresponding to each batch of dedicated master alloy wafers, specifically including: Based on the target resistivity of the pulled single crystal silicon and the average resistivity of each batch of special master alloy wafers, the doping amount corresponding to each batch of special master alloy wafers is obtained. S5. Select and weigh the dedicated master alloy wafers, specifically including: Based on the preset weight threshold of 1.5g, a batch of special master alloy wafers with a doping amount greater than the weight threshold were selected and weighed by vacuum adsorption. S6. Adding and pulling, specifically including: The weighed special master alloy wafer and silicon material in S5 are put into a crucible for single crystal pulling to obtain high resistivity single crystal silicon.

2. The method for preparing high resistivity single-crystal silicon with reduced target resistivity deviation as described in claim 1, characterized in that: In step S3, the two-step polishing specifically includes: First, mechanically grind to Ra=0.08μm; then chemically mechanically polish to Ra=0.008μm.

3. The method for preparing high resistivity single-crystal silicon with reduced target resistivity deviation as described in claim 1, characterized in that: The non-contact measurement specifically includes: measuring the cleaned master alloy wafer using a non-contact eddy current resistivity tester.

4. The method for preparing high resistivity single-crystal silicon with reduced target resistivity deviation as described in claim 1, characterized in that: The radial resistivity deviation is preset to 0.5%-1%.

5. A high resistivity single-crystal silicon, characterized in that: It is produced by pulling high resistivity single crystal silicon using the method for reducing target resistivity deviation as described in any one of claims 1-4.

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