Argon protection system for reducing seed crystal welding oxidation of single crystal furnace and crystal pulling method
By setting up auxiliary argon gas inlet holes and gas hoods in the single crystal furnace to form an annular gas curtain and airflow along the wall, the problem of seed crystal welding oxidation was solved, the quality and number of uses of single crystal silicon were improved, and the production cost was reduced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LESHAN JINGYUNTONG SEMICON MATERIALS CO LTD
- Filing Date
- 2026-04-08
- Publication Date
- 2026-06-19
AI Technical Summary
During the Czochralski crystal pulling process, the seed crystal weld joint is prone to oxidation, resulting in blackening and discoloration, which affects the yield and number of uses of monocrystalline silicon. Existing technologies are unable to effectively prevent this phenomenon.
Multiple symmetrically distributed auxiliary argon gas inlets are set on the side wall of the throat connection section at the top of the main furnace chamber of the single crystal furnace. The gas is guided by the gas hood to form an annular gas curtain and airflow along the wall, which locally cools down the seed crystal and protects it from oxidation reaction.
It effectively reduces seed crystal welding oxidation, extends the number of seed crystal uses, improves the yield of monocrystalline silicon, and reduces production costs.
Smart Images

Figure CN122235823A_ABST