A high-temperature and high-pressure incubation bin for processing artificial diamond

Abstract

This invention discloses a high-temperature, high-pressure (HTHP) cultivation chamber for processing synthetic diamonds, relating to the field of synthetic diamonds. This HTHP cultivation chamber for processing synthetic diamonds utilizes a crystal tray with an annular groove that mates with the reaction chamber's annular groove, and a carbon source column with the reaction chamber's annular groove that mates with the reaction chamber's annular groove. During seed crystal growth between the crystal tray and the carbon source column, pressure is applied through the convex ring of the ceramic baffle to the ceramic baffle at the annular groove position. During this compression process, a barrier is formed on the outside of the growth space, sealing the assembly gap under high temperature and pressure. After sealing, it prevents internal fragments from entering the growth space during compression, thus preventing contamination of the diamond growth environment and affecting the purity of the synthetic diamond. Simultaneously, the convex ring restricts the positions of the reaction chamber, carbon source column, and crystal tray, preventing misalignment between the crystal tray and carbon source column during pressure application. Misalignment during pressure application would lead to fragmentation and splashing within the cultivation chamber.

Description

Technical Field

[0001] This invention specifically relates to a high-temperature, high-pressure cultivation chamber for processing synthetic diamonds, and pertains to the field of synthetic diamonds. Background Technology

[0002] Synthetic diamonds refer to diamond single crystals prepared by artificially simulating the growth environment of natural diamonds. They have the same composition and structure as natural diamonds and belong to the category of synthetic diamonds. High temperature and high pressure growth chambers refer to composite reaction chambers used for the high temperature and high pressure synthesis of synthetic diamonds. They are mainly composed of an outer pressure-transmitting and heat-insulating medium, end conductive components, internal heating components, heat insulation components and a central reaction chamber. They can provide a closed, uniform temperature and pressure reaction space for the phase transformation growth of carbon source into diamond single crystals under high temperature and high pressure coupling environment. In existing equipment, because diamond growth requires a high temperature and high pressure environment, the growth chamber is squeezed by a six-sided top press during the growth process. However, the material in the growth chamber breaks and pulverizes under high temperature and high pressure, falling into the reaction chamber to form inclusions, which reduces the clarity of the diamond. At the same time, the chamber is prone to bursting when heated by electricity, which can damage the top hammer. Summary of the Invention

[0003] To address the aforementioned problems, a technical solution is proposed: a high-temperature, high-pressure cultivation chamber for processing synthetic diamonds, comprising: A cavity mechanism, the cavity mechanism having a diamond growth space inside, a heating mechanism installed on the outside of the cavity mechanism, and a pressure-bearing mechanism installed on the outside of the heating mechanism; The cavity mechanism includes a reaction cylinder. A crystal tray and a carbon source column are mounted on the inner wall of the reaction cylinder. The outer sides of both the crystal tray and the carbon source column are in contact with the inner wall of the reaction cylinder. Annular grooves are formed at both ends of the inner wall of the reaction cylinder. Annular grooves are also formed at the outer ends of the crystal tray and the carbon source column that are furthest from each other. The annular grooves of the crystal tray and the carbon source column are adapted to the annular grooves of the reaction cylinder. Through the adaptation of the annular grooves of the crystal tray and the reaction cylinder, and in conjunction with the adaptation of the annular grooves of the carbon source column and the reaction cylinder, the crystal tray and the carbon source column... During seed crystal growth, pressure is applied to the ceramic retaining ring at the groove position by the convex ring of the ceramic retaining column. During the compression process, a barrier is formed on the outside of the growth space. Under high temperature and high pressure, the assembly gap is sealed. After sealing, the internal fragmented powder is restricted from entering the growth space during the compression process, causing pollution to the diamond growth environment and affecting the purity of the synthetic diamond. Ceramic retaining rings are snapped and installed between the crystal tray groove and the reaction cylinder groove, and between the carbon source column groove and the reaction cylinder groove.

[0004] Preferably, ceramic baffles are installed at both ends of the reaction cylinder. Each ceramic baffle has a convex ring on its opposite side, with the side of the convex ring away from the ceramic baffle fitting against the non-opposing side of the ceramic baffle. The convex ring of the ceramic baffle extends deep into the annular groove of the reaction cylinder, and the outer side of the convex ring fits against the inner wall of the reaction cylinder. Through the contact and adaptation between the convex ring of the ceramic baffle and the annular groove of the reaction cylinder, during the application of pressure by the six-sided press, the pressure causes compression between the internal components. The convex ring restricts the position of the reaction chamber, carbon source column, and crystal tray, preventing misalignment between the crystal tray and the carbon source column during pressurization. Misalignment during pressurization would lead to breakage and splashing of the cultivation chamber. Seed crystal grooves are evenly distributed on the side of the crystal tray closest to the carbon source column, and seed crystals are fixedly installed in each seed crystal groove. A catalyst layer is installed between the crystal tray and the carbon source column. The reaction cylinder is made of ceramic material, the carbon source column is made of graphite material, and the catalyst layer is made of iron-nickel-cobalt based alloy powder.

[0005] Preferably, the heating mechanism includes a heating cylinder, with annular grooves at both ends of the inner wall of the heating cylinder. A conductive end cover is snapped into each of the annular grooves. The bottom of the conductive end cover has a convex ring, and the inner wall of the convex ring is a tapered surface that gradually increases in diameter near the inner diameter of the heating cylinder. An insulating pad is snapped into the inner side of the convex ring of the conductive end cover. The opposite surface of the insulating pad is in contact with the non-opposing surface of the ceramic stop post. The outer side of the conductive end cover is a tapered surface whose outer diameter gradually decreases away from the heating cylinder. The contact between the convex ring of the conductive end cover and the outer side of the insulating pad... During the extrusion process, the current is blocked by the insulating pad. During the blocking, the ceramic baffle prevents the current from entering the reaction space. At the same time, during the extrusion process, the conical surface of the insulating pad fits into the conical surface of the conductive end cover. During the extrusion process, the conical surfaces fit tightly together, and gaps appear, causing the current to break down the air and create sparks, which can cause the incubation chamber to explode. The outer side of the conductive end cover away from the heating cylinder is provided with annular grooves. The inner wall of the heating cylinder fits into the outer side of the reaction cylinder, and the inner wall of the heating cylinder fits into the outer side of the ceramic baffle.

[0006] Preferably, the pressure-bearing mechanism includes two pressure-bearing blocks. One pressure-bearing block has a convex ring on its opposite surface, and the other pressure-bearing block has an annular groove on its opposite surface. The pressure-bearing blocks are fixed together by the convex ring and the annular groove. A cylindrical groove is formed on the outer side of each pressure-bearing block, and a conical groove is formed at the far end of each cylindrical groove. A pressure-bearing cylinder is installed in the cylindrical groove of each pressure-bearing block, and the inner wall of the pressure-bearing cylinder fits against the outer side of the heating cylinder. A pressure-bearing ring is snapped into the conical groove of each pressure-bearing block, and the outer side of the pressure-bearing ring matches the conical groove of the pressure-bearing block. The inner wall of the pressure-bearing ring is a conical surface. Furthermore, the inner wall of the pressure ring is provided with a convex ring at the end away from the pressure cylinder. During assembly, the inner wall of the pressure ring and the convex ring are pressed together by a hydraulic press to make the inner wall of the pressure ring fit tightly against the outer side of the conductive end cover. At the same time, the convex ring is engaged with the annular groove of the conductive end cover. During the pressurization process, the conical surface increases the fitting pressure with the outer side of the conductive end cover during the pressing, and a seal is formed at both ends to avoid gaps and current sparks. The inner wall of the pressure ring fits against the outer side of the conductive end cover, and the convex ring of the pressure ring is engaged with the annular groove of the conductive end cover. The pressure block, pressure cylinder, and pressure ring are all made of pyrophyllite material.

[0007] This invention provides a high-temperature, high-pressure cultivation chamber for processing synthetic diamonds, which has the following beneficial effects: (i) By matching the annular groove of the crystal tray with the annular groove of the reaction cylinder, and matching the annular groove of the carbon source column with the annular groove of the reaction cylinder, during the seed crystal growth between the crystal tray and the carbon source column, the pressure is squeezed by the convex ring of the ceramic baffle column against the ceramic baffle ring at the annular groove position. During the squeezing process, a barrier is formed on the outside of the growth space. Under the high temperature and high pressure environment, the assembly gap is closed. After the closure, the internal fragmented powder is restricted from entering the growth space during the squeezing process, causing pollution of the diamond growth environment and affecting the purity of the synthetic diamond.

[0008] (ii) By matching the convex ring of the ceramic baffle with the annular groove of the reaction cylinder, the pressure causes the internal components to be squeezed during the application of pressure by the six-sided top press. The convex ring restricts the position of the reaction chamber, carbon source column and crystal tray, preventing misalignment between the crystal tray and carbon source column during the application of pressure, which would cause the incubation chamber to break and splash during the application of pressure after misalignment.

[0009] (iii) Through the contact between the inclined convex ring of the conductive end cover and the outer side of the insulating pad, the current is blocked by the insulating pad during the extrusion process. During the blocking, the ceramic baffle is used to prevent the current from entering the reaction space. At the same time, during the extrusion process, the conical surface of the insulating pad is in contact with the conical surface of the conductive end cover. During the extrusion process, the conical surfaces are tightly fitted together, and gaps appear, which cause the current to break down the air and create sparks, causing the incubation chamber to explode.

[0010] (iv) During assembly, the inner wall of the pressure ring and the convex ring are combined by hydraulic press to make the inner wall of the pressure ring fit tightly against the outer side of the conductive end cover. At the same time, the convex ring is engaged with the annular groove of the conductive end cover. During the pressurization process, the conical surface is used to increase the fitting pressure with the outer side of the conductive end cover during the extrusion, and a seal is formed at both ends to avoid gaps and current sparks. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the overall structure of the present invention; Figure 2 This is a cross-sectional view of the overall structure of the present invention; Figure 3 This is a sectional view of the pressure-bearing mechanism of the present invention; Figure 4 This is a cross-sectional view of the heating mechanism of the present invention; Figure 5 This is a partial sectional view of the heating mechanism of the present invention; Figure 6 This is a schematic diagram of the cavity mechanism of the present invention; Figure 7 This is a partial sectional view of the cavity mechanism of the present invention.

[0012] In the diagram: 1. Pressure-bearing mechanism; 2. Heating mechanism; 3. Cavity mechanism; 11. Pressure-bearing block; 12. Pressure-bearing cylinder; 13. Pressure-bearing ring; 21. Conductive end cover; 22. Heating cylinder; 23. Insulating pad; 31. Reaction cylinder; 32. Ceramic baffle; 33. Ceramic baffle ring; 34. Crystal tray; 35. Carbon source column; 36. Catalyst layer; 37. Seed crystal. Detailed Implementation

[0013] Example 1, Reference Figures 1 to 2 and Figures 6 to 7 The present invention provides this technical solution: A high-temperature, high-pressure cultivation chamber for processing synthetic diamonds includes: The cavity mechanism 3 has a diamond growth space inside, and a heating mechanism 2 is installed on the outside of the cavity mechanism 3. A pressure-bearing mechanism 1 is installed on the outside of the heating mechanism 2. The cavity mechanism 3 includes a reaction cylinder 31. A crystal tray 34 and a carbon source pillar 35 are mounted on the inner wall of the reaction cylinder 31. The outer sides of both the crystal tray 34 and the carbon source pillar 35 are in contact with the inner wall of the reaction cylinder 31. Annular grooves are formed at both ends of the inner wall of the reaction cylinder 31. Annular grooves are also formed at the ends of the crystal tray 34 and the carbon source pillar 35 that are far apart from each other. A seed crystal 37 fixedly installed in the seed crystal groove of the crystal tray 34 provides a substrate for diamond growth. Simultaneously, the carbon source pillar 35, made of graphite material, provides a carbon source for diamond growth. Meanwhile, the iron-nickel-cobalt based alloy powder in the catalyst layer 36, under high temperature and high pressure, reduces the temperature of the graphite-to-diamond phase transition. The pressure threshold provides a carbon ion transport channel, and the annular grooves of the crystal tray 34 and the carbon source column 35 are adapted to the annular groove of the reaction cylinder 31. Ceramic retaining rings 33 are snapped between the annular groove of the crystal tray 34 and the annular groove of the reaction cylinder 31, and between the annular groove of the carbon source column 35 and the annular groove of the reaction cylinder 31. During the pressure application process, the ceramic retaining column 32 at both ends of the reaction cylinder 31 cooperates with the ceramic retaining ring 33. During the pressure application process, the ceramic retaining column 32 transmits the pressure evenly to the inside, and under high temperature and high pressure environment, the convex ring of the ceramic retaining column 32 squeezes the ceramic retaining ring 33 at the annular groove of the reaction cylinder 31, forming a barrier on the outside of the growth position.

[0014] Both ends of the reaction cylinder 31 are equipped with ceramic baffles 32. The opposite surfaces of the ceramic baffles 32 are provided with protruding rings, and the side of the protruding ring away from the ceramic baffles 32 is in contact with the non-opposite surface of the ceramic baffle ring 33. The protruding rings of the ceramic baffles 32 penetrate into the annular groove of the reaction cylinder 31, and the outer side of the protruding rings of the ceramic baffles 32 is in contact with the inner wall of the reaction cylinder 31. Seed crystal grooves are evenly opened on the side of the crystal tray 34 near the carbon source column 35, and seed crystals 37 are fixedly installed at the seed crystal grooves of the crystal tray 34. A catalyst layer 36 is installed between the crystal tray 34 and the carbon source column 35. The reaction cylinder 31 is made of ceramic material, the carbon source column 35 is made of graphite material, and the catalyst layer 36 is made of iron-nickel-cobalt based alloy powder.

[0015] Example 2, based on Example 1, with reference to Figures 4 to 5The heating mechanism 2 includes a heating cylinder 22. Both ends of the inner wall of the heating cylinder 22 have annular grooves. Conductive end covers 21 are snapped into each of the annular grooves. The bottom of the conductive end cover 21 has a convex ring, and the inner wall of the convex ring is a tapered surface that gradually increases in diameter near the inner diameter of the heating cylinder 22. An insulating pad 23 is snapped into the inner side of the convex ring of the conductive end cover 21. The opposite surface of the insulating pad 23 is in contact with the non-opposing surface of the ceramic baffle 32. The outer side of the conductive end cover 21 is a tapered surface whose outer diameter gradually decreases away from the heating cylinder 22. Utilizing the resistance heating characteristics of the graphite material in the heating cylinder 22 when energized, pressure is applied during contact with the six-sided press. The positive and negative electrodes of the six-sided press contact the conductive end caps 21 at both ends of the heating cylinder 22, so that the current is transferred from one of the conductive end caps 21 to the heating cylinder 22 and then to the other conductive end cap 21. When the current passes through the heating cylinder 22, the graphite material is heated and the temperature is uniformly transferred to the internal cavity mechanism 3 to form a high-temperature environment. Combined with the pressure applied by the six-sided press, a high-temperature and high-pressure environment for diamond growth is formed. The outer side of the conductive end cap 21 away from the heating cylinder 22 is provided with annular grooves. The inner wall of the heating cylinder 22 is in contact with the outer side of the reaction cylinder 31, and the inner wall of the heating cylinder 22 is in contact with the outer side of the ceramic baffle 32.

[0016] Example 3, based on Examples 1 and 2, with reference to Figure 3 The pressure-bearing mechanism 1 includes two pressure-bearing blocks 11. One pressure-bearing block 11 has a convex ring on its opposite side, and the other pressure-bearing block 11 has an annular groove on its opposite side. The pressure-bearing blocks 11 are fixed together by the convex ring and the annular groove. A cylindrical groove is formed on the outer side of each pressure-bearing block 11. During assembly, the heating mechanism 2 is inserted into the inside of the pressure-bearing cylinder 12, and then the two pressure-bearing blocks 11 are assembled onto the outer side of the pressure-bearing cylinder 12, ensuring a tight fit between them. A conical groove is formed at the far end of each pressure-bearing block 11's cylindrical groove. The pressure-bearing cylinder 12 is installed in the cylindrical groove of the pressure-bearing block 11, and the inner wall of the pressure-bearing cylinder 12 is in contact with the outer side of the heating cylinder 22. The conical groove of the pressure-bearing block 11... Each pressure ring 13 is snapped into place. The outer side of the pressure ring 13 is adapted to the conical groove of the pressure block 11. The inner wall of the pressure ring 13 is conical. Then, the pressure rings 13 at both ends are pressed into the conical groove of the pressure block 11 by a hydraulic press. When the pressure ring 13 is pressed in, the inner wall of the pressure ring 13 is tightly fitted to the outer side of the conductive end cover 21. At the same time, the convex ring of the pressure ring 13 is snapped into the annular groove of the conductive end cover 21. The end of the inner wall of the pressure ring 13 away from the pressure cylinder 12 is provided with a convex ring. The inner wall of the pressure ring 13 is fitted to the outer side of the conductive end cover 21, and the convex ring of the pressure ring 13 is snapped into the annular groove of the conductive end cover 21. The pressure block 11, the pressure cylinder 12 and the pressure ring 13 are all made of pyrophyllite.

[0017] In use, the heating mechanism 2 is fitted onto the outside of the assembled cavity mechanism 3, and then the pressure bearing mechanism 1 is fitted onto the outside of the heating mechanism 2. Finally, the assembled cultivation chamber is placed into the six-sided top press. The six-sided top press applies pressure and electricity to the cultivation chamber, so that the diamond growth space inside the cavity mechanism 3 is in a high temperature and high pressure state, and the diamond growth is completed during the cultivation process.

[0018] In the cavity mechanism 3, the seed crystal 37 fixedly installed in the seed crystal groove of the crystal tray 34 provides a substrate for diamond growth. At the same time, the carbon source pillar 35 of graphite material provides a carbon source for diamond growth. Meanwhile, the iron-nickel-cobalt based alloy powder of the catalyst layer 36 reduces the temperature and pressure threshold of the graphite-to-diamond phase transition under high temperature and high pressure, providing a carbon ion transport channel. During the pressurization process, the ceramic baffle pillars 32 and ceramic baffle rings 33 at both ends of the reaction cylinder 31 cooperate to uniformly transmit pressure inward during the pressurization process. Under high temperature and high pressure, the convex ring of the ceramic baffle pillar 32 squeezes the ceramic baffle ring 33 at the annular groove of the reaction cylinder 31, forming a barrier on the outside of the growth position.

[0019] In the heating mechanism 2, the graphite material in the heating cylinder 22 is resistively heated when energized. When the six-sided press is applied, the positive and negative electrodes of the six-sided press contact the conductive end caps 21 at both ends of the heating cylinder 22, so that the current is transferred from one of the conductive end caps 21 to the heating cylinder 22 and then to the other conductive end cap 21. When the current passes through the heating cylinder 22, the graphite material is heated, and the temperature is uniformly transferred to the internal cavity mechanism 3 to form a high-temperature environment. Combined with the pressure applied by the six-sided press, a high-temperature and high-pressure environment for diamond growth is formed.

[0020] In the pressure-bearing mechanism 1, during assembly, the heating mechanism 2 is inserted into the inside of the pressure-bearing cylinder 12, and then two pressure-bearing blocks 11 are assembled on the outside of the pressure-bearing cylinder 12 so that the pressure-bearing blocks 11 and the pressure-bearing cylinder 12 fit tightly together. Then, the pressure-bearing rings 13 at both ends are pressed into the conical grooves of the pressure-bearing blocks 11 by a hydraulic press. When the pressure-bearing rings 13 are pressed in, the inner wall of the pressure-bearing rings 13 fits tightly with the outer side of the conductive end cover 21, and at the same time, the convex ring of the pressure-bearing rings 13 engages with the annular groove of the conductive end cover 21.

Claims

1. A high-temperature, high-pressure cultivation chamber for processing synthetic diamonds, characterized in that, include: The cavity mechanism (3) has a diamond growth space inside, and a heating mechanism (2) is installed on the outside of the cavity mechanism (3), and a pressure bearing mechanism (1) is installed on the outside of the heating mechanism (2). The cavity mechanism (3) includes a reaction cylinder (31). A crystal tray (34) and a carbon source column (35) are installed on the inner wall of the reaction cylinder (31). The outer sides of the crystal tray (34) and the outer sides of the carbon source column (35) are both in contact with the inner wall of the reaction cylinder (31). Both ends of the inner wall of the reaction cylinder (31) are provided with annular grooves. The outer ends of the crystal tray (34) and the carbon source column (35) that are far apart from each other are provided with annular grooves. The annular grooves of the crystal tray (34) and the carbon source column (35) are adapted to the annular groove of the reaction cylinder (31). Ceramic retaining rings (33) are snapped between the annular groove of the crystal tray (34) and the annular groove of the reaction cylinder (31) and between the annular groove of the carbon source column (35) and the annular groove of the reaction cylinder (31).

2. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 1, characterized in that: Both ends of the reaction cylinder (31) are equipped with ceramic baffles (32), and the opposite sides of the ceramic baffles (32) are provided with protruding rings, and the side of the protruding ring away from the ceramic baffles (32) is in contact with the non-opposite side of the ceramic baffle (33). The convex ring of the ceramic baffle (32) extends into the annular groove of the reaction cylinder (31), and the outer side of the convex ring of the ceramic baffle (32) is in contact with the inner wall of the reaction cylinder (31).

3. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 2, characterized in that: The crystal tray (34) is provided with seed crystal grooves evenly on the side near the carbon source column (35), and seed crystals (37) are fixedly installed at the seed crystal grooves of the crystal tray (34). A catalyst layer (36) is installed between the crystal tray (34) and the carbon source column (35).

4. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 3, characterized in that: The reaction chamber (31) is made of ceramic material, the carbon source column (35) is made of graphite material, and the catalyst layer (36) is made of iron-nickel-cobalt based alloy powder.

5. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 4, characterized in that: The heating mechanism (2) includes a heating cylinder (22), and both ends of the inner wall of the heating cylinder (22) are provided with annular grooves, and conductive end caps (21) are snapped into the annular grooves of the heating cylinder (22).

6. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 5, characterized in that: The bottom of the conductive end cover (21) is provided with a convex ring, and the inner wall of the convex ring is a tapered surface that gradually increases in diameter near the heating cylinder (22). An insulating pad (23) is snapped onto the inner side of the convex ring of the conductive end cover (21), and the opposite side of the insulating pad (23) is in contact with the non-opposite side of the ceramic baffle (32).

7. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 6, characterized in that: The outer side of the conductive end cover (21) is a tapered surface with an outer diameter that gradually decreases away from the heating cylinder (22). An annular groove is provided at the outer end of the conductive end cover (21) away from the heating cylinder (22). The inner wall of the heating cylinder (22) is in contact with the outer side of the reaction cylinder (31), and the inner wall of the heating cylinder (22) is in contact with the outer side of the ceramic baffle (32).

8. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 7, characterized in that: The pressure-bearing mechanism (1) includes a pressure-bearing block (11), and there are two pressure-bearing blocks (11). One of the pressure-bearing blocks (11) has a convex ring on its opposite side, and the other pressure-bearing block (11) has an annular groove on its opposite side. The pressure-bearing blocks (11) are fixed together by the convex ring and the annular groove, and a cylindrical groove is provided on the outer side of the pressure-bearing block (11).

9. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 8, characterized in that: The pressure-bearing blocks (11) have conical grooves at their ends that are far apart from each other. A pressure-bearing cylinder (12) is installed in the groove of the pressure-bearing block (11). The inner wall of the pressure-bearing cylinder (12) is in contact with the outer side of the heating cylinder (22). A pressure-bearing ring (13) is snapped into the conical groove of the pressure-bearing block (11). The outer side of the pressure-bearing ring (13) is adapted to the conical groove of the pressure-bearing block (11). The inner wall of the pressure-bearing ring (13) is a conical surface. A convex ring is provided at the end of the inner wall of the pressure-bearing ring (13) that is far away from the pressure-bearing cylinder (12).

10. The high-temperature and high-pressure cultivation chamber for processing synthetic diamonds according to claim 9, characterized in that: The inner wall of the pressure-bearing ring (13) is fitted to the outer side of the conductive end cover (21), and the convex ring of the pressure-bearing ring (13) is engaged with the annular groove of the conductive end cover (21). The pressure-bearing block (11), the pressure-bearing cylinder (12) and the pressure-bearing ring (13) are all made of pyrophyllite material.

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