X-ray detector

Abstract

The present invention relates to an X-ray detector 10 including two or more scintillator layers, the X-ray detector 10 including a first scintillator layer 20, a second scintillator layer 30, a first photodiode array 40, a second photodiode array 50, and at least one light-emitting layer 60. The first scintillator layer is configured to absorb X-rays from an X-ray pulse and emit light. The first photodiode array is positioned adjacent to the first scintillator layer. The first photodiode array is configured to detect at least a portion of the light emitted by the first scintillator layer. The second scintillator layer is configured to absorb X-rays from the X-ray pulse and emit light. The second photodiode array is positioned adjacent to the second scintillator layer. The second photodiode array is configured to detect at least a portion of the light emitted by the second scintillator layer. The at least one light emitting layer is configured to emit radiation such that at least a portion of the emitted radiation illuminates the first photodiode array and at least a portion of the emitted radiation illuminates the second photodiode array.

Description

[Technical field]

[0001] The present invention relates to an X-ray detector and an X-ray detector system. [Background technology]

[0002] Specialized X-ray detectors for spectral energy computed tomography and / or X-ray applications, including two or more scintillator layers and associated photodiode arrays, are very expensive. For example, low-cost photodiodes based on organic photodiodes (OPD) or amorphous silicon (a-Si) have a relatively high defect density in the bulk, and charge can be trapped at the defect sites and later released. These detectors do not find utility in these specialized applications, as such problems result in image artifacts.

[0003] This issue needs to be addressed. Summary of the Invention

[0004] It would be advantageous to be able to utilize low-cost photodiodes in a specialized multi-layer X-ray detector. The object of the invention is solved by the subject matter of the independent claims, further embodiments are incorporated in the dependent claims. It is noted that the below described aspects and examples of the invention also apply to X-ray detectors and X-ray detector systems.

[0005] In a first aspect, there is provided an X-ray detector comprising two or more scintillator layers, the X-ray detector comprising: A first scintillator layer; A second scintillator layer; A first photodiode array; A second photodiode array; and At least one light-emitting layer Includes.

[0006] The first scintillator layer is configured to absorb x-rays from the x-ray pulse and emit light in response thereto. The first photodiode array is positioned adjacent to the first scintillator layer. The first photodiode array is configured to detect at least a portion of the light emitted by the first scintillator layer. The second scintillator layer is configured to absorb x-rays from the x-ray pulse that have passed through the first scintillator layer and emit light in response thereto. The second photodiode array is positioned adjacent to the second scintillator layer. The second photodiode array is configured to detect at least a portion of the light emitted by the second scintillator layer. The at least one light emitting layer is configured to emit radiation such that at least a portion of the emitted radiation illuminates the first photodiode array and at least a portion of the emitted radiation illuminates the second photodiode array.

[0007] The X-ray pulses that pass through the first scintillator layer and are absorbed by the second scintillator layer generally have a higher energy than the X-ray pulses that are absorbed in the first scintillator layer. In this way, dual-layer detectors with energy-discriminating scintillator layers, for example for computed tomography dual-energy applications, can utilize low-cost photodiodes (for example based on organic layers OPD or a-Si). The reason for this is that these low-cost photodiodes have a relatively high defect density in the bulk, but are provided with a light-emitting layer that emits, for example, visible and ultraviolet light below 750 nm to fill defect sites, or infrared radiation above 750 nm to fill traps in the band gap. This means that problems such as changes in the effective gain (or detection efficiency) and / or changes in the step response of such low-cost detectors are mitigated.

[0008] The first photodiode array being positioned adjacent to the first scintillator layer does not preclude other elements of the x-ray detector being present between the first photodiode array and the first scintillator layer.

[0009] The second photodiode array being positioned adjacent to the second scintillator layer does not preclude other elements of the x-ray detector being present between the second photodiode array and the second scintillator layer.

[0010] In one example, at least one light-emitting layer is configured to emit radiation in the infrared wavelengths, and / or at least one light-emitting layer is configured to emit radiation in the visible wavelengths, and / or at least one light-emitting layer is configured to emit radiation in the ultraviolet wavelengths.

[0011] In one example, at least one light emitting layer is positioned between the first photodiode array and the second photodiode array.

[0012] In this way, only one light emitting layer is needed which emits radiation in one direction to deliver to the first photodiode and in the opposite direction to deliver to the second photodiode array.

[0013] The at least one light emitting layer positioned between the first photodiode array and the second photodiode array does not exclude another element of the X-ray detector being between the at least one light emitting layer and the first photodiode array.

[0014] The at least one light emitting layer positioned between the first photodiode array and the second photodiode array does not exclude another element of the X-ray detector being present between the at least one light emitting layer and the second photodiode array.

[0015] In one example, the at least one light-emitting layer is configured such that the transmittance of the at least one light-emitting layer in a direction from the first photodiode array to the second photodiode array for light emitted by the first scintillator layer and / or in a direction from the second photodiode array to the first photodiode array for light emitted by the second scintillator layer is less than 10%, preferably less than 5%, and more preferably less than 1%.

[0016] This means that crosstalk from one scintillator layer to another is minimized, since radiation emitted by one scintillator layer traverses the luminescent layer and is not collected (or at least the majority of the radiation is not collected) by the photodiode array associated with the other scintillator layer.

[0017] In one example, a first light emitting layer is positioned below a first photodiode array and a second light emitting layer is positioned below a second photodiode array.

[0018] Here, "below" means the side of the first photodiode array that is away from the x-ray source.

[0019] In this way, crosstalk is completely eliminated since one luminescent layer is positioned between two scintillator layers and the underside of the luminescent layer is fabricated as, for example, a reflector or radiation blocker that prevents radiation from one scintillator layer from being detected by the photodiode array associated with the other scintillator layer. If two reflectors are used, they are used in both layers to maximize the amount of radiation emitted in the direction of the associated photodiode array for that scintillator layer.

[0020] The first light emitting layer positioned below the first photodiode array does not preclude other elements of the x-ray detector being present between the first light emitting layer and the first photodiode array.

[0021] A second light emitting layer positioned below the second photodiode array does not preclude other elements of the x-ray detector being present between the second light emitting layer and the second photodiode array.

[0022] In one example, the at least one light emitting layer includes at least one glass or polymer plate. The at least one light source is configured to generate radiation that is emitted by the at least one light emitting layer.

[0023] In one example, the at least one light source is at least one LED.

[0024] In one example, the at least one light source is positioned adjacent to at least one edge of the at least one light emitting layer.

[0025] This means that the X-rays interact with both scintillator layers without a light source, such as an LED, in the X-ray path.

[0026] In one example, at least one edge of at least one light emitting layer is mirrored.

[0027] In this manner, light leaking out of one or more sides of the at least one light emitting layer is minimized, thereby maximizing the light emitted towards the photodiode array.

[0028] Here, "mirrored" means that at least one edge is provided with a reflective coating or has a mirror finish.

[0029] In one example, at least one surface of at least one light-emitting layer that is substantially perpendicular to at least one edge is roughened.

[0030] In this manner, optical coupling from one or more surfaces of the at least one light emitting layer towards the photodiode array is enhanced.

[0031] In one example, at least one LED is integrated within at least one light emitting layer.

[0032] In one example, the at least one light-emitting layer includes at least one OLED layer.

[0033] In one example, a first surface of the first photodiode array faces toward the first scintillator layer, a second surface of the first photodiode array faces away from the first scintillator layer, and a first surface of the second photodiode array faces toward the second surface of the first photodiode array, a first electrode contacts the second surface of the first photodiode array, and a second electrode contacts the first surface of the second photodiode array.

[0034] In this way, the electrodes used as part of the bias potential of the photodiode array are also used as part of the power supply for light emitting means, such as an LED, associated with at least one light emitting layer.

[0035] In one example, the first electrode and the second electrode contact at least one light-emitting layer.

[0036] In a second aspect, there is provided an X-ray detector system comprising an X-ray detector according to the first aspect and a processing unit configured to control the X-ray detector such that at least one luminescent layer does not emit radiation when the X-ray source is emitting X-rays.

[0037] In a third aspect, there is provided an X-ray detector system comprising an X-ray source and an X-ray detector according to the first aspect. Optionally, the X-ray detector system further comprises a processing unit configured to control the X-ray detector such that the at least one light emitting layer does not emit radiation when the X-ray source is emitting X-rays.

[0038] Thus, the light-emitting layer can operate continuously, while the photodiode array generates an offset current during X-ray source operation, which can be considered as a noise source. However, here, the light-emitting layer operates only when the X-ray source is not operating, reducing the effect of defects. In other words, the light-emitting layer does not provide illumination to the photodiode array during X-ray emission, but is on indefinitely at other times.

[0039] Advantageously, advantages provided by any of the above aspects apply equally to all of the other aspects, and vice versa.

[0040] The above-mentioned aspects and examples will be apparent from and elucidated with reference to the embodiments described hereinafter.

[0041] Exemplary embodiments are described below with reference to the following drawings: [Brief description of the drawings]

[0042] [Figure 1] FIG. 1 shows a schematic setup of an example X-ray detector. [Diagram 2] FIG. 1 shows a schematic setup of an example X-ray detector system. [Diagram 3] FIG. 1 shows a schematic setup of an example X-ray detector. [Figure 4] FIG. 1 shows a schematic setup of an example X-ray detector. [Diagram 5] FIG. 2 shows a schematic setup of an example luminescent layer of an example X-ray detector. [Figure 6] FIG. 2 shows a schematic setup of an example luminescent layer of an example X-ray detector. [Figure 7] FIG. 1 shows a schematic setup of an example X-ray detector. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0043] FIG. 1 illustrates an example of an X-ray detector 10. The X-ray detector includes a first scintillator layer 20, a second scintillator layer 30, a first photodiode array 40, a second photodiode array 50, and at least one light emitting layer 60. The first scintillator layer is configured to absorb X-rays from an X-ray pulse and emit light. The first photodiode array is positioned adjacent to the first scintillator layer. The first photodiode array is configured to detect at least a portion of the light emitted by the first scintillator layer. The second scintillator layer is configured to absorb X-rays from an X-ray pulse that has passed through the first scintillator layer and emit light. The second photodiode array is positioned adjacent to the second scintillator layer. The second photodiode array is configured to detect at least a portion of the light emitted by the second scintillator layer. The at least one light emitting layer is configured to emit radiation. The at least one light emitting layer is configured such that at least a portion of the emitted radiation from the at least one light emitting layer illuminates the first photodiode array and such that at least a portion of the emitted radiation from the at least one light emitting layer illuminates the second photodiode array.

[0044] In one example, the at least one light emitting layer has a thickness of 0.5 mm or less.

[0045] In one example, the at least one light emitting layer has a thickness of 0.3 mm or less.

[0046] In one example, the at least one light emitting layer includes at least one optical plate.

[0047] According to one example, at least one light-emitting layer is configured to emit radiation at infrared wavelengths, and / or at least one light-emitting layer is configured to emit visible radiation, and / or at least one light-emitting layer is configured to emit radiation at ultraviolet wavelengths.

[0048] In one example, the visible and / or ultraviolet radiation is less than 750 nm.

[0049] In one example, the infrared radiation is greater than 750 nm.

[0050] Those skilled in the art will recognize that these numbers are merely representative, and thus, for example, visible light and ultraviolet light are sometimes considered to be less than 800 nm, and infrared light is sometimes considered to be greater than 800 nm or indeed greater than 900 nm.

[0051] According to one example, at least one light emitting layer is positioned between the first photodiode array and the second photodiode array.

[0052] According to one example, the at least one luminescent layer is configured such that the transmittance of the at least one luminescent layer in a direction from the first photodiode array to the second photodiode array with respect to light emitted by the first scintillator layer is less than 10%, preferably less than 5%, and more preferably less than 1%.

[0053] According to one example, the at least one luminescent layer is configured such that the transmittance of the at least one luminescent layer in a direction from the second photodiode array to the first photodiode array with respect to light emitted by the second scintillator layer is less than 10%, preferably less than 5%, and more preferably less than 1%.

[0054] According to one example, a first layer 62 of at least one light emitting layer is positioned below the first photodiode array and a second layer 64 of at least one light emitting layer is positioned below the second photodiode array. Figure 7, described below, illustrates a possible embodiment of this example.

[0055] According to one example, the at least one light emitting layer includes at least one glass or polymer plate, and the at least one light source 90 is configured to generate radiation that is emitted by the at least one light emitting layer.

[0056] The at least one light source is at least one light emitting diode (LED).

[0057] According to one example, the at least one light source is positioned adjacent to at least one edge of the at least one light emitting layer.

[0058] At least one light source, such as one or more LEDs, is either external to the layer and delivers light into the layer or embedded within the layer near an edge of the layer.

[0059] According to one example, the light sources (eg, LEDs) are within the light emitting layers and at least one edge of at least one of the light emitting layers is mirrored (100).

[0060] However, the light source (e.g., an LED) is external to the layer and injects light into the layer at an edge that is not mirrored, while the other edge of the layer is mirrored.

[0061] According to one example, at least one surface of at least one light-emitting layer that is substantially perpendicular to at least one edge is roughened.

[0062] According to one example, at least one light source, such as at least one LED, is integrated within at least one light emitting layer.

[0063] According to one example, the at least one light emitting layer includes at least one organic light emitting diode (OLED) layer.

[0064] According to one example, a first surface of the first photodiode array faces toward the first scintillator layer, a second surface of the first photodiode array faces away from the first scintillator layer, a first surface of the second photodiode array faces toward the second surface of the first photodiode array, a first electrode (70) contacts the second surface of the first photodiode array, and a second electrode (80) contacts the first surface of the second photodiode array.

[0065] According to one example, the first electrode and the second electrode contact at least one light-emitting layer.

[0066] 2 illustrates an example of an X-ray detector system 200. The X-ray detector system includes an X-ray source 210 and the X-ray detector 10 described above with respect to FIG.

[0067] According to an example, the X-ray detector system 200 includes a processing unit 220. The processing unit is configured to control the X-ray detector such that the at least one light emitting layer does not emit radiation when the X-ray source is emitting X-rays.

[0068] Thus, for example, the LEDs producing the light emitted by the at least one light emitting layer are controlled so as not to emit light when the x-ray source is emitting x-rays.

[0069] Next, the X-ray detector and the X-ray detector system will be described in further detail with respect to specific embodiments and reference will be made to FIGS.

[0070] With the special X-ray detector configuration described herein, low-cost (organic photodiode (OPD) or a-Si based) photodiodes can now be used to replace expensive photodiodes in CT. Thus, OPDs are now also considered for the next generation of dual-layer flat X-ray detectors. Until now, these types of photodiode arrays (PDAs), despite being cost-effective, have suffered from high artifacts, which has hindered their adoption in applications, especially CT applications.

[0071] To provide context regarding the problems addressed in current X-ray detector configurations, the following provides further details regarding problems associated with low-cost photodiode arrays. The most relevant non-ideal behavior is related to the temporal characteristics of the PDA. The effective gain (or detection efficiency) and step response appear to change over time due to charge trapping in the active region. Since these photodiodes have a relatively high defect density in the bulk, charge is trapped at the defect sites and is only released on fairly long time scales. This causes artifacts such as ghosting, but also image artifacts, e.g. band artifacts in CT. Methods to suppress temporal artifacts due to charge trapping are known, e.g. switching off the bias or shortening the forward bias interval. However, a solution to dual-layer detector applications with bias light / backside illumination is missing until now.

[0072] As discussed above and provided in further detail below, the present detector addresses this by a special configuration of layers with one or more emissive layers within the detector configuration used to "back-illuminate" a low-cost photodiode array that is used to detect radiation emitted from the scintillator layer, such low-cost photodiode arrays being based on OPD or a-Si.

[0073] The inventors realized that by using a light wavelength with energy above the material band gap (i.e., red light below 800 nm), the defect sites of the photodiode array used in the X-ray detector are filled before X-ray illumination. After filling the traps, this means that no further traps are generated and no change in detection efficiency is noticed during X-ray illumination. Moreover, by doing so before every X-ray scan, it is ensured that the same initial conditions are met for every imaging task. Moreover, the inventors realized that illumination in the infrared sub-band (e.g., IR>900 nm) can also be used to fill traps in the band gap.

[0074] However, it should be noted that such pulsing of the light emission in the new detector is not mandatory and continuous backlighting can be considered, where the red and / or infrared illumination remains on all the time. However, this also means that the photodiodes generate an offset current corresponding to their sensitivity to light, which is considered as a noise source. In this case, pulsed backlighting as discussed above is useful, where the illumination is switched off during the X-ray exposure and is on indefinitely otherwise.

[0075] FIG. 3 shows an example of a new type of X-ray detector 10. The X-ray detector has a top layer scintillator 20, with a low-cost photodiode array 40 positioned adjacent to the top layer scintillator to detect radiation emitted from the scintillator resulting from the absorption of X-rays. The X-ray detector further has a bottom layer scintillator 30, with another low-cost photodiode array 50 positioned adjacent to the bottom layer scintillator to detect radiation emitted from the scintillator resulting from the absorption of X-rays. A glass plate 60 is introduced between both photodiode arrays and serves as a luminescent layer 60. The plate has integrated LEDs 90 and serves as a diffuser plate so that the two PDAs are homogenously illuminated, thereby filling defect sites and / or filling traps depending on the wavelength of the LEDs' emission, as discussed above. Other materials instead of glass may be used, for example thick polymers, PMMA, etc. The glass plate 60 thus serves as a mechanical support and as a diffuse base luminescent layer for infrared and / or red light.

[0076] In Fig. 3, electrodes 70 and 80 are flex foil electrodes (base substrate material) that are sufficiently transparent so that most of the IR illuminates the photodiode array. In the configuration shown in Fig. 3, the PDA is arranged to be "back" illuminated (with respect to light traveling from the scintillator layer) by the emissive layer 60. Alternatively, the flex foil may be on top of the PDA (front-illuminated type) and need only be optically transparent (e.g. ITO routing). In this alternative configuration (see Fig. 4), the glass plate is in direct contact with the PDA.

[0077] An advantage of the embodiment shown in Figure 3 is that the flex substrate (flex foil electrodes) not only supplies the bias voltage to the PDA but also carries the supply voltage to the LEDs on the glass plate. Since the glass plate is "sandwiched" between two flex foils, each foil can carry one of the power supplies, e.g. a common cathode top and a common anode bottom, or vice versa.

[0078] Glass causes unwanted X-ray absorption, therefore it is advantageous to keep the glass substrate as thin as possible: ideally it should be no thicker than 0.5 mm, preferably less than 0.3 mm.

[0079] With respect to the embodiment shown in Fig. 3 and Fig. 4, due to the almost transparent nature of the PDA (especially the OPD), optical crosstalk occurs across both scintillator layers, which deteriorates the energy separation of the dual-layer detector. To address this, the glass surfaces are treated to have, for example, only 10% transparency across the interface. The remaining light is reflected and / or absorbed. With a 10% transparency at each glass surface / interface, light trying to travel from one scintillator layer to the photodiode array of the other scintillator layer must cross two successive interfaces with 10% transparency, so that the crosstalk across both layers is suppressed to well below 1%. The LED array supplying radiation to the glass luminescent layer must in such a situation provide more light to compensate for the lack of transparency of the exit surface of the glass layer. A flex foil electrode as shown in Fig. 4 is now positioned between the photodiode array and the scintillator layer.

[0080] 5 and 6 show examples of exemplary glass plates. Preferably, all or most of the edge side of the glass plate is clad with a reflective material to maximize the light emitted by both the top and bottom surfaces. Thus, the glass plate has a reflective or mirrored edge 100, e.g., mirror or TiO2 (from the inside).

[0081] 5, LED diodes 90 are integrated into the glass plate. In this embodiment, electrodes 70, 80 are bottom / top uniform electrodes, however each LED has a "dot" contact on each side and is contacted individually.

[0082] In the embodiment shown in FIG. 6, the LED diodes 90 are placed only on the sides of the glass plate to maximize the edge mirror coverage, i.e. the reflected light at the edge is not absorbed by the LED array in the glass volume. In this case, the LEDs are also not in the X-ray path of the lower detector. The top and bottom surfaces of the glass layer are roughened to enhance the outcoupling of light from the LEDs via scattering. Surface roughening also applies to the embodiment shown in FIG. 5.

[0083] In a flat detector, an existing glass plate is used to couple the light in from the side. The underside of the plate is treated to increase light scattering and create a homogenous light distribution across the detector.

[0084] In the above embodiment, the glass plate is placed in between both photodiode layers and serves both photodiode layers. Alternatively, each photodiode array can have its own light emitting layer or plate. In this case, the stack becomes slightly more complicated, but the crosstalk between the layers is minimized or completely eliminated. Figure 7 shows an example of this implementation. However, it should be noted that in flat panel applications, bottom backlighting is already available. In this case, the stack again consists of a single glass plate sandwiched between both layers, but only serves the top layer. As can be seen in Figure 7, the inner glass plate now has a reflector 110 on the bottom side that helps to maximize the use of light and prevent light crosstalk between the layers. However, this layer is not a mirror, but simply a radiation blocking layer for UV radiation / visible light / infrared, while there is no excessive attenuation for X-rays. It should be noted that the embodiment shown in Figure 7 is just one of several possible configurations. For example, the top layer is a back-lit BIP PDA and the bottom layer is a front-lit FIP. However, the top layer may be FIP and the bottom layer may be BIP. However, both layers may be BIP or both layers may be FIP. Additionally, any of the layer configurations discussed above with respect to Figure 7 may be reversed, in that rather than the x-rays coming from the top of the figure, the x-rays may come from the bottom.

[0085] As discussed above, the flex foil electrodes 70, 80 shown in the embodiment of Figure 3, and indeed in the embodiment shown in Figure 7, carry the supply voltage to the LEDs in the glass plate as well as supplying voltage to the photodiode array. The flex foil electrodes in the X-ray detector shown in Figure 4 are then positioned between the photodiode array and the scintillator layer, so a different technique is required to bias the luminescent glass plate. There are several mechanisms to accomplish this.

[0086] The photodiode array has a substrate (also called bulk) contact on the top, i.e. the substrate (bottom side) of the photodiode array is biased to a particular potential from the top contact, the other photodiode array is then biased to a different potential sufficient to drive the LED associated with the glass plate, i.e. the bottom side of the photodiode array provides the bias.

[0087] The photodiode array brings a dedicated bias voltage from top to bottom (reflected in Fig. 4) and has TSV (Through Silicon Via) contacts that allow access to the glass plate. In this case, it is sufficient for only one array to supply both potentials to the plate, which is particularly suitable if the plate has contacts on only one side. (In the case of recessed LEDs, the contacts are on both sides.) Since photodiode arrays are typically very thin, TSVs are suitable.

[0088] The flex foil (top layer) contacts the side of the plate, which is particularly suitable if the LEDs are placed on the side of the glass plate, but it is not limited to this embodiment.

[0089] The glass plate can have a dedicated flex foil emerging from the third side (or two sides).

[0090] It should also be noted that an embodiment of an X-ray detector can in fact be a combination of the embodiments shown in Figures 3 and 4, which is in principle possible. In this combined embodiment, the top layer is back-illuminated and supplies bias to the plate through the flex foil from one side only. The bottom layer is then any type of photodiode array that does not need to contact the plate.

[0091] Therefore, in the embodiment discussed above, the flex foil serves as an interconnect to the photodiode array electrodes and also provides bias to the light-emitting glass plate. This applies when the X-ray detector is used for CT applications, where the entire detector is made of tiles, i.e. the detector is made of small elements arranged next to each other, resulting in a large area detector. However, this also applies to X-ray detectors for other X-ray applications. In the latter case, where a large area device is useful, the "flex foil" is in the form of a TFT panel (thin film transistor, flex, etc.) that also provides a front-end readout to the photodiode array. The TFT then connects to one or more side line amplifiers and ADCs.

[0092] In the above discussion, a light-emitting layer in the form of a glass plate with LEDs has been described, and it has been mentioned that a polymer rather than glass is used, however, the light-emitting layer can be in the form of a thin electroluminescent layer, such as an organic light-emitting diode OLED layer.

[0093] It should be noted that embodiments of the present invention are described with reference to different subject matters. In particular, some embodiments are described with reference to method type claims, while other embodiments are described with reference to device type claims. However, those skilled in the art will understand from the above and following descriptions that, unless otherwise specified, any combination of features belonging to one type of subject matter, as well as any combination between features relating to different subject matters, is considered to be disclosed by the present application. However, all features can be combined to provide synergistic effects that go beyond the simple sum of the features.

[0094] While the invention has been illustrated and described in detail in the drawings and the foregoing description, such drawings and description are to be considered as illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments. Other variations to the disclosed embodiments can be understood and effected by those skilled in the art, from a study of the drawings, the disclosure, and the dependent claims, in practicing the claimed invention.

[0095] In the claims, the words "comprise, include, have" do not exclude other elements or steps, and the singular does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims should not be interpreted as limiting the scope.

Claims

1. 1. An X-ray multi-layer detector comprising two or more scintillator layers, A first scintillator layer; A second scintillator layer; A first photodiode array; A second photodiode array; and One emitting layer Including, the first scintillator layer absorbs x-rays from the x-ray pulse and emits light; the first photodiode array is positioned adjacent to the first scintillator layer; the first photodiode array detects at least a portion of the light emitted by the first scintillator layer; the second scintillator layer absorbs x-rays from the x-ray pulse that pass through the first scintillator layer and emits light; the second photodiode array is positioned adjacent to the second scintillator layer; the second photodiode array detects at least a portion of the light emitted by the second scintillator layer; In an X-ray multilayer detector, the one light emitting layer emits radiation, the one light emitting layer is configured such that at least a portion of its emitted radiation illuminates the first photodiode array and at least a portion of its emitted radiation illuminates the second photodiode array.

2. 2. The X-ray multi-layer detector of claim 1, wherein said one light emitting layer emits radiation in the infrared wavelengths and / or said one light emitting layer emits radiation in the visible and / or ultraviolet wavelengths.

3. 3. An X-ray multi-layer detector according to claim 1, wherein the one light emitting layer is located between the first photodiode array and the second photodiode array.

4. 4. The X-ray multi-layer detector according to claim 3, wherein the one luminescent layer is configured such that a transmittance of the one luminescent layer for light emitted by the first scintillator layer in a direction from the first photodiode array to the second photodiode array and / or in a direction from the second photodiode array to the first photodiode array for light emitted by the second scintillator layer is less than 10%.

5. 5. The X-ray multi-layer detector according to claim 1, wherein the one light emitting layer comprises at least one glass or polymer plate and at least one light source generates the radiation emitted by the one light emitting layer.

6. 6. The X-ray multi-layer detector of claim 5, wherein said at least one light source is positioned adjacent at least one edge of said one light emitting layer.

7. 7. The X-ray multi-layer detector of claim 6, wherein said at least one edge of said one light emitting layer is mirrored.

8. 8. An X-ray multi-layer detector according to claim 6 or 7, wherein at least one face of said one light emitting layer substantially perpendicular to said at least one edge is roughened.

9. 6. The X-ray multi-layer detector of claim 5, wherein said at least one light source is integrated within said one light emitting layer.

10. 5. An X-ray multi-layer detector according to claim 1, wherein said one light emitting layer comprises at least one OLED layer.

11. 11. The X-ray multi-layer detector of claim 1, wherein a first surface of the first photodiode array faces toward the first scintillator layer, a second surface of the first photodiode array faces away from the first scintillator layer, a first surface of the second photodiode array faces toward the second surface of the first photodiode array, a first electrode contacts the second surface of the first photodiode array, and a second electrode contacts the first surface of the second photodiode array.

12. The X-ray multi-layer detector of claim 11 , wherein the first electrode and the second electrode contact the one light emitting layer.

13. 1. An x-ray detector system for use with an x-ray source, comprising: An X-ray multilayer detector according to any one of claims 1 to 12, a processing unit for controlling the X-ray detector so that the one light emitting layer does not emit radiation when the X-ray source is emitting X-rays; 1. An X-ray detector system comprising:

14. An X-ray source; and An X-ray multilayer detector according to any one of claims 1 to 12, 1. An X-ray detector system comprising:

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