Electronic device

Abstract

Provided is an electronic device that is capable of detecting differences in touch types. Provided is an electronic device that has few parts and is capable of detecting differences in touch types. Provided is an electronic device by which various processes can be executed through simple operations. The electronic device comprises a controller and a display unit. The display unit has a function of displaying images on a screen, and comprises a detector. The detector has a function of detecting touch operations and a function of capturing at least two images of a detected object that has touched the screen. The controller has a function of calculating the difference between the area of the detected object in the first captured image and the area of the detected object in the second captured image, and executing different processes depending on whether the difference is greater or less than a benchmark.

Description

[Technical field]

[0001] 1. Field of the Invention The present invention relates to an electronic device, a display device, and a program.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (e.g., a touch sensor), an input / output device (e.g., a touch panel), a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] In recent years, many information terminal devices, such as mobile phones such as smartphones and tablet information terminals, are equipped with functions that allow users to execute various processes with simple operations. For example, in order to increase the variety of operations, there are functions that detect the strength (pressure) of a touch and change the process to be executed depending on the degree of pressure.

[0004] Furthermore, such information terminal devices often contain personal information, and various authentication techniques have been developed to prevent unauthorized use.

[0005] For example, Patent Document 1 discloses an electronic device that includes a fingerprint sensor in a push button switch section. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] US Patent Application Publication No. 2014 / 0056493 Summary of the Invention [Problem to be solved by the invention]

[0007] Capacitive touch sensors, which are widely used in information terminal devices, detect touch by utilizing changes in the capacitance of the display surface. Although capacitive touch sensors can determine the position of a finger or electrostatic touch pen, they cannot detect the pressure applied to the display. For this reason, many capacitive touch sensors are equipped with pressure sensors that can detect pressure to detect differences in touch methods. However, incorporating a pressure sensor increases the number of parts in an information terminal device.

[0008] An object of one embodiment of the present invention is to provide an electronic device that can detect differences in touching methods.Another object of one embodiment of the present invention is to provide an electronic device that can detect differences in touching methods with a small number of components.Another object of one embodiment of the present invention is to provide an electronic device that can execute various processes with a simple operation.Another object of one embodiment of the present invention is to provide a novel electronic device.

[0009] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description of the specification, drawings, and claims. [Means for solving the problem]

[0010] One aspect of the present invention is an electronic device having a control unit and a display unit. The display unit has a function of displaying an image on a screen, and also has a detection unit. The detection unit has a function of detecting a touch operation and a function of capturing an image of a detectable object touching the screen at least twice. The control unit has a function of calculating a difference between an area of ​​the detectable object captured in a first image and an area of ​​the detectable object captured in a second image, and executing different processes depending on whether the difference is larger or smaller than a reference value.

[0011] Another aspect of the present invention is an electronic device having a control unit, a display unit, and a memory unit. The display unit has a function of displaying an image on a screen, and has a detection unit. The detection unit has a function of detecting a touch operation and a function of capturing an image of a detectable object touching the screen. The control unit has a function of acquiring information on the contact area of ​​the detectable object from data captured by the detection unit. The memory unit has a function of retaining information on a reference contact area registered in advance. The control unit has a function of executing different processes depending on whether the contact area of ​​the detectable object is larger or smaller than the reference contact area.

[0012] Another aspect of the present invention is an electronic device having a control unit, a display unit, and a storage unit. The display unit has a function of displaying an image on a screen, and also has a detection unit. The detection unit has a function of detecting a touch operation on the screen, and a function of capturing an image of a finger touching the screen. The control unit has a function of acquiring information on a contact area of ​​the finger and fingerprint information of the finger from data captured by the detection unit. The storage unit has a function of retaining fingerprint information for matching and information on a reference contact area, each of which is registered in advance. The control unit has a function of matching the fingerprint information of the finger with the fingerprint information for matching, and a function of executing different processes depending on whether the contact area of ​​the finger is larger or smaller than the reference contact area when the fingerprint information of the finger matches the fingerprint information for matching.

[0013] In the above, it is preferable that the display unit has a function of capturing an image using a plurality of pixels and an entire display area. In this case, it is preferable that the pixel has a light-emitting element and a light-receiving element, and the light-emitting element and the light-receiving element are provided on the same surface.

[0014] In the above, the light-emitting element preferably has a laminated structure in which a first electrode, a light-emitting layer, and a common electrode are laminated. The light-receiving element preferably has a laminated structure in which a second electrode, an active layer, and a common electrode are laminated. In this case, it is preferable that the light-emitting layer and the active layer each contain different organic compounds. It is also preferable that the first electrode and the second electrode are provided on the same plane and spaced apart from each other, and the common electrode is provided to cover the light-emitting layer and the active layer.

[0015] Alternatively, in the above, the light-emitting element preferably has a laminated structure in which a first electrode, a common layer, a light-emitting layer, and a common electrode are laminated. The light-receiving element preferably has a laminated structure in which a second electrode, a common layer, an active layer, and a common electrode are laminated. In this case, it is preferable that the light-emitting layer and the active layer each contain different organic compounds. It is also preferable that the first electrode and the second electrode are provided on the same plane and spaced apart from each other, the common electrode is provided to cover the light-emitting layer and the active layer, and the common layer is provided to cover the first electrode and the second electrode.

[0016] In the above, it is preferable that the light-emitting element has a function of emitting visible light, and the light-receiving element has a function of receiving the visible light emitted by the light-emitting element.

[0017] Alternatively, in the above, it is preferable that the light-emitting element has a function of emitting infrared light, and the light-receiving element has a function of receiving the infrared light emitted by the light-emitting element. Effect of the Invention

[0018] According to one embodiment of the present invention, an electronic device capable of detecting differences in touching manners can be provided. According to one embodiment of the present invention, an electronic device capable of detecting differences in touching manners with a small number of components can be provided. According to one embodiment of the present invention, an electronic device capable of executing various processes with a simple operation can be provided. According to one embodiment of the present invention, a novel electronic device can be provided.

[0019] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief description of the drawings]

[0020] FIG. 1 is a diagram illustrating an example of the configuration of a device. FIG. 2 is a diagram illustrating an example of a method of operating the device. FIG. 3 is a diagram illustrating an example of a method of operating the device. 4A and 4B are diagrams showing the state in which an image of a finger is being captured and the captured image data. 5A and 5B are diagrams showing changes in the contact area of ​​a finger over time. Figures 6A to 6D and 6F are cross-sectional views showing an example of a display device. Figures 6E and 6G are diagrams showing examples of images captured by the display device. Figures 6H and 6J to 6L are top views showing examples of pixels. 7A to 7G are top views showing an example of a pixel. 8A and 8B are cross-sectional views showing an example of a display device. 9A and 9B are cross-sectional views showing an example of a display device. 10A to 10C are cross-sectional views showing an example of a display device. Fig. 11A is a cross-sectional view showing an example of a display device, Fig. 11B and Fig. 11C are diagrams showing an example of an upper surface layout of a resin layer. FIG. 12 is a perspective view showing an example of a display device. FIG. 13 is a cross-sectional view showing an example of a display device. FIG. 14 is a cross-sectional view showing an example of a display device. Fig. 15A is a cross-sectional view illustrating an example of a display device, and Fig. 15B is a cross-sectional view illustrating an example of a transistor. 16A and 16B are circuit diagrams showing an example of a pixel circuit. 17A and 17B are diagrams showing an example of an electronic device. 18A to 18D are diagrams showing an example of an electronic device. 19A to 19F are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the modes and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and the repeated explanations are omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be used.

[0023] In addition, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0024] In addition, the words "film" and "layer" can be interchanged depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0025] (Embodiment 1) In this embodiment, a configuration example and an operation method of an electronic device of one embodiment of the present invention will be described with reference to FIGS. 1 to 5.

[0026] In the drawings attached to this specification, the components are classified by function and shown in block diagrams as independent blocks. However, in reality, it is difficult to completely separate the components by function, and one component may be involved in multiple functions, or one function may be realized by multiple components.

[0027] The electronic device of one embodiment of the present invention can recognize the difference in the touching manner by detecting the contact area of ​​the detection target. This allows the electronic device to execute different processes depending on the touching manner. In particular, it is preferable to operate the electronic device of one embodiment of the present invention using an object with a variable contact area, such as a finger or a rubber-tipped pen.

[0028] Specifically, the electronic device of one embodiment of the present invention can capture an image of a detectable object touching a screen, acquire information on the contact area, and execute different processes depending on whether the contact area of ​​the detectable object is larger or smaller than a reference contact area registered in advance. This makes it possible to execute different processes depending on whether the screen is touched strongly or weakly.

[0029] Furthermore, the electronic device of one embodiment of the present invention can capture an image of a detectable object touching a screen, obtain information on the contact area, and execute a process according to a change in the contact area of ​​the detectable object. For example, the electronic device can capture an image of the detectable object twice, calculate the difference between the contact area of ​​the detectable object captured the first time and the contact area of ​​the detectable object captured the second time, and execute different processes depending on whether the contact area is larger or smaller than a reference area. This allows different processes to be executed depending on whether the user continues to touch the screen with the same strength and presses harder after touching the screen, even if the user presses the screen for a long time.

[0030] In the electronic device of one embodiment of the present invention, the touch operation can be detected and the detection target can be imaged on the display unit. Then, information on the contact area of ​​the detection target can be obtained from the image data of the detection target, and the difference in the way of touching can be recognized. Therefore, since there is no need to separately mount a pressure sensor or the like, a multifunctional device can be realized with a small number of components.

[0031] Furthermore, the electronic device according to one embodiment of the present invention may have a function of acquiring a fingerprint of a finger touching a screen and executing a user authentication process using the fingerprint. By combining fingerprint information with information on the contact area of ​​a finger, a device with an extremely high level of security can be realized. For example, the fingerprint information and the size or change pattern of the contact area can be stored in the device, and the device can be set so that processing is not executed unless both the fingerprint information and the size or change pattern of the contact area match. The electronic device may also have a function of executing a user authentication process using a palm print instead of a fingerprint.

[0032] As described above, in the electronic device of one embodiment of the present invention, an image of a detectable object can be captured by the display portion. Therefore, fingerprint information of the detectable object can be obtained from data of an image of a finger touching the screen. Therefore, since there is no need to separately mount a fingerprint sensor or the like, a multifunctional device can be realized with a small number of components.

[0033] [Examples of electronic device configurations] 1 shows a block diagram of a device 10 according to one embodiment of the present invention. The device 10 includes a control unit 11, a display unit 12, and a storage unit 13. The display unit 12 includes a detection unit 21. The device 10 can be used as an electronic device such as an information terminal device.

[0034] The display unit 12 has a function of displaying an image, a function of detecting a touch operation, and a function of capturing an image of a detectable object. The display unit 12 preferably further has a function of acquiring fingerprint information of a finger that touches a screen or the like. Here, an example is shown in which the display unit 12 has a detection unit 21. The detection unit 21 is a part that performs the functions of detecting a touch operation, capturing an image of a detectable object, and acquiring fingerprint information, among the above functions of the display unit 12. The display unit 12 can also be called a touch panel with a fingerprint information acquiring function. For example, the display unit 12 can be a display device that will be described in detail in the second embodiment.

[0035] The detection unit 21 has a function of outputting information about a position on the screen touched by a detectable object to the control unit 11. The detection unit 21 also has a function of capturing an image of the detectable object touching the screen and outputting the image information to the control unit 11.

[0036] It is preferable that the display unit 12 can capture an image of a touched detectable object regardless of the position on the screen. In other words, it is preferable that the range on the screen where the touch sensor functions and the range where information on the contact area of ​​the detectable object (and further fingerprint information) can be obtained match or approximately match.

[0037] In addition, while FIG. 1 shows an example in which the display unit 12 includes the detection unit 21, they may be provided separately. Alternatively, a detection unit used to detect a touch operation and a detection unit used to acquire fingerprint information may be provided separately. For example, a detection unit that acquires fingerprint information may be included in the display unit, and a detection unit that detects a touch operation may be provided independently of the display unit. For example, the display device described in detail in the second embodiment may be used for the display unit having a detection unit that acquires fingerprint information, and a capacitance type touch sensor may be used for the detection unit that detects a touch operation.

[0038] The storage unit 13 has a function of storing information on the reference contact area. Furthermore, the storage unit 13 preferably has a function of storing fingerprint information of a user registered in advance. The storage unit 13 can output the contact area information (and fingerprint information) to the control unit 11 in response to a request from the control unit 11.

[0039] The contact area information may be registered in advance in the device 10, or may be registered appropriately by the user. Examples of the reference contact area information include a reference size of the contact area and a reference amount of change in the contact area. For example, the control unit 11 can determine whether the contact area of ​​the detectable object is larger than the reference contact area and decide the process to be executed. Alternatively, the control unit 11 can determine whether the change in the contact area of ​​the detectable object is larger than the amount of change in the reference contact area and decide the process to be executed.

[0040] It is preferable that the storage unit 13 stores fingerprint information of all fingers that the user uses to operate the screen. For example, it is possible to store fingerprint information of two fingers, the index finger of the user's right hand and the index finger of the left hand. In addition, it is preferable to store fingerprint information of one or more fingers of the middle finger, ring finger, little finger, and thumb.

[0041] The control unit 11 has a function of requesting the detection unit 21 to capture an image of the detectable object when the detection unit 21 detects a touch operation. The control unit 11 has a function of acquiring information on the contact area of ​​the detectable object from the image data of the detectable object input from the detection unit 21. The control unit 11 has a function of comparing the information on the contact area of ​​the detectable object with reference contact area information registered in advance in the storage unit 13.

[0042] Furthermore, the control unit 11 may have a function of acquiring information on the amount of change in the contact area of ​​the object to be detected from at least two pieces of imaging data input from the detection unit 21. In this case, it is preferable that the control unit 11 compares the information on the amount of change in the contact area with information on the amount of change in the contact area that serves as a reference and is registered in advance in the storage unit 13, and executes processing according to the comparison result.

[0043] Also, it is preferable that the control unit 11 has a function of acquiring fingerprint information from the imaging data of the object to be detected input from the detection unit 21. Furthermore, it is preferable that the control unit 11 has a function of matching the fingerprint information of the object to be detected with fingerprint information registered in advance in the storage unit 13.

[0044] For example, when the control unit 11 determines that the fingerprint information of the object matches the registered fingerprint information, it executes a process according to the contact area collation result. On the other hand, when the control unit 11 determines that the two fingerprint information do not match, it does not execute the process.

[0045] The fingerprint authentication method executed by the control unit 11 may be, for example, a template matching method that compares two images and uses the similarity between them, or a pattern matching method. The fingerprint authentication process may also be performed by inference using machine learning. In this case, it is particularly preferable to perform the inference using a neural network.

[0046] Moreover, the control unit 11 can function as, for example, a central processing unit (CPU). The control unit 11 performs various data processing and program control by interpreting and executing commands from various programs by the processor. The programs that can be executed by the processor may be stored in a memory area of ​​the processor or may be stored in the storage unit 13.

[0047] [Device 10 operation example 1] An example of the operation of the device 10 will be described below. In operation example 1, the contact area of ​​the detectable object is detected, and differences in the manner of touching can be recognized. This allows the electronic device to execute different processes depending on the manner of touching. Operation example 1 is an example in which imaging is performed twice, and different processes are executed depending on whether the change in the contact area of ​​the detectable object is large or not. FIG. 2 is a flowchart relating to the operation of the device 10. The flowchart shown in FIG. 2 has steps S1 to S7.

[0048] In step S1, detection of a touch operation is performed by the detection unit 21. If a touch is detected, the process proceeds to step S2. If no touch operation is performed, the process waits until a touch operation is performed (the process proceeds to step S1 again).

[0049] In step S2, a first image is captured by the detection unit 21, and an image of the detection object is captured. The detection unit 21 outputs the acquired image data to the control unit 11.

[0050] In step S3, the detection unit 21 performs a second imaging operation to image the object to be detected in the same manner as the first imaging operation. The detection unit 21 outputs the obtained imaging data to the control unit 11.

[0051] In step S4, the control unit 11 acquires information on the contact area of ​​the detectable object from the imaging data acquired by the detection unit 21. Then, the control unit 11 calculates the difference between the contact area of ​​the detectable object in the first imaging and the contact area of ​​the detectable object in the second imaging.

[0052] In step S5, the control unit 11 judges whether or not the difference between the contact area of ​​the detectable object in the first image and the contact area of ​​the detectable object in the second image is greater than a reference value. In the present embodiment, an example is shown in which if the difference is greater than the reference value, the process proceeds to step S6, and if the difference is equal to or smaller than the reference value, the process proceeds to step S7.

[0053] In step S6, the control unit 11 executes a first process, for example, to start up an arbitrary application.

[0054] In step S7, the control unit 11 executes a second process, for example, to terminate an arbitrary application.

[0055] This concludes the description of the flowchart shown in FIG.

[0056] Note that the process to be executed may be determined by capturing an image only once and judging whether the contact area of ​​the detectable object in the captured image is larger than a reference contact area registered in advance in the storage unit 13. In other words, step S3 shown in Fig. 2 may not be included. In this case, the image is captured in step S2, and the contact area of ​​the detectable object in the captured image is acquired in step S4. Then, in step S5, the process to be executed may be determined by judging whether the contact area of ​​the detectable object is larger than a reference contact area registered in advance in the storage unit 13.

[0057] [Device 10 operation example 2] Another example of the operation of the device 10 will be described below. In the operation example 2, a case where a specific user touches the touch screen and then presses harder to execute a predetermined process will be described as an example. Note that the operation example 2 can further increase the security level since it is possible to perform personal authentication in addition to the process that reflects the difference in the touching manner in the operation example 1. FIG. 3 is a flowchart related to the operation of the device 10. The flowchart shown in FIG. 3 includes steps S11 to S17.

[0058] In step S11, detection of a touch operation is performed by the detection unit 21. If a touch operation is detected, the process proceeds to step S12. If no touch operation is performed, the process waits until a touch operation is performed (the process proceeds to step S11 again).

[0059] In step S12, a first image is captured by the detection unit 21, and an image of the detection object is captured. The detection unit 21 outputs the acquired image data to the control unit 11.

[0060] In step S13, the detection unit 21 performs a second imaging operation to image the object to be detected in the same manner as the first imaging operation. The detection unit 21 outputs the obtained imaging data to the control unit 11.

[0061] Step S14 is referred to as process A. In step S14, the control unit 11 acquires information on the contact area of ​​the detectable object from the imaging data acquired by the detection unit 21. Then, the control unit 11 calculates the difference between the contact area of ​​the detectable object in the first imaging and the contact area of ​​the detectable object in the second imaging.

[0062] Step S15 is referred to as process B. In step S15, control unit 11 acquires fingerprint information of the object to be detected from the imaging data acquired by detection unit 21. Then, control unit 11 compares the fingerprint information. Specifically, the fingerprint information stored in storage unit 13 is compared with the fingerprint information acquired by detection unit 21, and it is determined whether or not they match.

[0063] In step S16, the control unit 11 judges whether the information obtained from step S12 to step S15 satisfies both the fingerprint information and the size of the contact area or the pattern of the change in the size, both stored in the storage unit 13. That is, the control unit 11 judges whether both the process A and the process B satisfy the conditions. For example, the condition for the process A is that the difference in the contact area of ​​the object calculated in step S14 is greater than a reference. For example, the condition for the process B is that the fingerprint information stored in the storage unit 13 and collated in step S15 matches the fingerprint information acquired by the detection unit 21. If the conditions for both the process A and the process B are satisfied, the process proceeds to step S17. On the other hand, if the conditions for either one of the processes are not satisfied, the process proceeds to step S11. That is, if a different user touches the screen, the predetermined process is not executed. Also, even if a specific user touches the screen, if the user continues to press the screen with the same strength while touching the screen, the predetermined process is not executed.

[0064] In step S17, the control unit 11 executes a predetermined process, for example, unlocking a locked folder and opening the folder.

[0065] This concludes the description of the flowchart shown in FIG.

[0066] 4A and 4B show a side view of a finger being imaged and the image data.

[0067] 4A is a schematic diagram showing the display unit 20, the finger 22, a captured image 23 of the finger, and a reference contact area 24 registered in advance. In FIG. 4A, the tip of the finger 22 is touching the upper surface of the display unit 20. At this time, the display unit 20 captures a captured image 23 of the finger 22, and a contact area 22A of the finger 22 is captured in a lower area of ​​the captured image 23. Since the area of ​​the contact area 22A of the finger 22 in the captured image 23 (which may also be called the contact area) is larger than the reference contact area 24, a first process is executed.

[0068] Fig. 4B shows a schematic diagram of the display unit 20, the finger 22, the captured image 25, and the reference contact area 24. In Fig. 4B, the tip of the finger 22 is touching the upper surface of the display unit 20. At this time, the display unit 20 captures a captured image 25 of the finger 22, and a contact area 22A of the finger 22 is captured in the upper area of ​​the captured image 25. Since the area of ​​the contact area 22A of the finger 22 in the captured image 25 is smaller than the reference contact area 24, the second process is executed.

[0069] As described above, it is preferable that the display unit can capture an image of a touched object no matter where on the screen it is located. This allows the touch area to be compared with a reference touch area no matter where on the display unit the object is touched, and processing is performed.

[0070] It is also possible to execute different processes depending on the center position of the contact area 22A of the finger 22 or the amount of change in the center position. Specifically, when the center position of the contact area 22A of the finger 22 moves more than a reference, the screen may be enlarged, and when the center position of the contact area 22A of the finger 22 moves less than a reference, the screen may be reduced.

[0071] FIG. 5 shows the finger contact area over time.

[0072] 5A shows a schematic diagram of the display unit 20, a finger 22, a first captured image 26, and a second captured image 27. In FIG. 5A, the finger 22 is touching the display unit 20, and the area of ​​the contact region 22A is increasing with time. The difference in area between the contact region 22A in the first captured image 26 and the second captured image 27 is calculated, and if the difference is greater than a reference change in the contact area, a first process is executed. The frequency of imaging and the interval between imaging can be set as appropriate.

[0073] Fig. 5B shows a schematic diagram of the display unit 20, the finger 22, the first captured image 28, and the second captured image 29. In Fig. 5B, the finger 22 is touching the display unit 20, and the change in the area of ​​the contact region 22A over time is smaller than that in Fig. 5A. The difference in the contact area between the first captured image 28 and the second captured image 29 is calculated, and if the difference is smaller than the reference change in the contact area, the second process is executed.

[0074] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate.

[0075] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0076] The display device of this embodiment can be suitably used in the display portion of the device described in the first embodiment.

[0077] A display portion of a display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting element (also referred to as a light-emitting device), and further has one or both of an imaging function and a sensing function.

[0078] A display device according to one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element. Alternatively, a display device according to one embodiment of the present invention includes a light-receiving and light-emitting element (also referred to as a light-receiving and light-emitting device) and a light-emitting element.

[0079] First, a display device having a light receiving element and a light emitting element will be described.

[0080] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element in a display portion. In the display device according to one embodiment of the present invention, light-emitting elements are arranged in a matrix in the display portion, and an image can be displayed on the display portion. In addition, light-receiving elements are arranged in a matrix in the display portion, and the display portion has one or both of an imaging function and a sensing function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger or a pen) can be detected. Furthermore, in the display device according to one embodiment of the present invention, the light-emitting element can be used as a light source for a sensor. Therefore, it is not necessary to provide a light-receiving portion and a light source separately from the display device, and the number of components of an electronic device can be reduced.

[0081] In a display device of one embodiment of the present invention, when light emitted by a light-emitting element included in a display portion is reflected (or scattered) by an object, a light-receiving element can detect the reflected light (or scattered light); therefore, imaging or detection of a touch operation is possible even in a dark place.

[0082] A display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting element, that is, the light-emitting element functions as a display element (also referred to as a display device).

[0083] As the light-emitting element, it is preferable to use an EL element (also called an EL device) such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting substances that the EL element has include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). In addition, an LED such as a micro LED (Light Emitting Diode) can also be used as the light-emitting element.

[0084] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving element.

[0085] When the light receiving element is used as an image sensor, the display device can capture an image using the light receiving element. For example, the display device of the present embodiment can be used as a scanner.

[0086] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced, and the electronic device can be made smaller and lighter, compared to a case in which a biometric authentication sensor is provided separately from the display device.

[0087] Furthermore, when the light receiving element is used as a touch sensor, the display device can detect the proximity or contact of an object by using the light receiving element.

[0088] The light receiving element may be, for example, a pn-type or pin-type photodiode. The light receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on the light receiving element and generates electric charge. The amount of electric charge generated by the light receiving element is determined based on the amount of light incident on the light receiving element.

[0089] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light receiving element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, and therefore can be applied to various display devices.

[0090] In one embodiment of the present invention, an organic EL element (also called an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL element.

[0091] If all layers constituting an organic EL element and an organic photodiode are to be fabricated separately, the number of film formation processes will be extremely large. Since many layers of an organic photodiode can be made common to an organic EL element, the layers that can be made common can be formed in a single process, thereby suppressing the increase in film formation processes.

[0092] For example, one of the pair of electrodes (common electrode) can be a layer common to the light receiving element and the light emitting element. Also, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is preferably a layer common to the light receiving element and the light emitting element. Also, for example, the light receiving element and the light emitting element can have the same configuration except that the light receiving element has an active layer and the light emitting element has a light emitting layer. That is, the light receiving element can be manufactured by simply replacing the light emitting layer of the light emitting element with the active layer. In this way, by having the light receiving element and the light emitting element have a common layer, the number of film formations and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Also, a display device having a light receiving element can be manufactured by using an existing manufacturing device and manufacturing method for a display device.

[0093] In addition, the layer shared by the light receiving element and the light emitting element may have different functions in the light emitting element and the light receiving element. In this specification, the components are named based on their functions in the light emitting element. For example, the hole injection layer functions as a hole injection layer in the light emitting element and functions as a hole transport layer in the light receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light emitting element and functions as an electron transport layer in the light receiving element. In addition, the layer shared by the light receiving element and the light emitting element may have the same functions in the light emitting element and the light receiving element. The hole transport layer functions as a hole transport layer in both the light emitting element and the light receiving element, and the electron transport layer functions as an electron transport layer in both the light emitting element and the light receiving element.

[0094] Next, a display device having light emitting and receiving elements and a light emitting element will be described.

[0095] In a display device of one embodiment of the present invention, a subpixel that exhibits one of the colors has a light-receiving and light-emitting element instead of a light-emitting element, and a subpixel that exhibits the other color has a light-emitting element. The light-receiving and light-emitting element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three subpixels, that is, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-receiving and light-emitting element, and the other subpixels have light-emitting elements. Therefore, a display portion of the display device of one embodiment of the present invention has a function of displaying an image using both the light-receiving and light-emitting elements and the light-emitting elements.

[0096] When the light-receiving / light-emitting element serves as both a light-emitting element and a light-receiving element, a light-receiving function can be imparted to the pixel without increasing the number of subpixels included in the pixel. This allows one or both of an imaging function and a sensing function to be added to the display portion of the display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, the display device of one embodiment of the present invention can have a higher aperture ratio of the pixel and can easily achieve high resolution, compared to the case where a subpixel having a light-receiving element is provided in addition to a subpixel having a light-emitting element.

[0097] In a display device according to one embodiment of the present invention, a light-receiving and light-emitting element are arranged in a matrix in a display portion, and an image can be displayed on the display portion. The display portion can be used as an image sensor or a touch sensor. In the display device according to one embodiment of the present invention, the light-emitting element can be used as a light source of a sensor. Therefore, it is not necessary to provide a light-receiving portion and a light source separately from the display device, and the number of components of an electronic device can be reduced.

[0098] In a display device of one embodiment of the present invention, when light emitted by a light-emitting element included in a display portion is reflected (or scattered) by an object, the light-receiving and light-emitting element can detect the reflected light (or scattered light); therefore, imaging and touch operation can be detected even in a dark place.

[0099] The light-receiving and light-emitting element can be fabricated by combining an organic EL element and an organic photodiode. For example, the light-receiving and light-emitting element can be fabricated by adding an active layer of an organic photodiode to the layered structure of an organic EL element. Furthermore, the light-receiving and light-emitting element fabricated by combining an organic EL element and an organic photodiode can suppress an increase in the number of film formation steps by forming layers that can be configured in common with the organic EL element in a single step.

[0100] For example, one of the pair of electrodes (common electrode) can be a layer common to the light receiving / emitting element and the light emitting element. Also, for example, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a layer common to the light receiving / emitting element and the light emitting element. Also, for example, the light receiving / emitting element and the light emitting element can have the same configuration except for the presence or absence of the active layer of the light receiving element. In other words, the light receiving / emitting element can be manufactured by simply adding the active layer of the light receiving element to the light emitting element. In this way, by having the light receiving / emitting element and the light emitting element have a common layer, the number of film formations and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Also, a display device having a light receiving / emitting element can be manufactured by using an existing manufacturing device and manufacturing method for a display device.

[0101] The layers of the light-receiving / light-emitting element may have different functions when the light-receiving / light-emitting element functions as a light-receiving element and when it functions as a light-emitting element. In this specification, the components are named based on the functions when the light-receiving / light-emitting element functions as a light-emitting element. For example, the hole injection layer functions as a hole injection layer when the light-receiving / light-emitting element functions as a light-emitting element, and functions as a hole transport layer when the light-receiving / light-emitting element functions as a light-receiving element. Similarly, the electron injection layer functions as an electron injection layer when the light-receiving / light-emitting element functions as a light-emitting element, and functions as an electron transport layer when the light-receiving / light-emitting element functions as a light-receiving element. In addition, the layers of the light-receiving / light-emitting element may have the same functions when the light-receiving / light-emitting element functions as a light-receiving element and when it functions as a light-emitting element. The hole transport layer functions as a hole transport layer when the light-receiving / light-emitting element functions as a light-emitting element and a light-receiving element, and the electron transport layer functions as an electron transport layer when the light-receiving / light-emitting element functions as a light-emitting element and a light-receiving element.

[0102] The display device of this embodiment has a function of displaying an image using a light-emitting element and a light-receiving and light-emitting element, that is, the light-emitting element and the light-receiving and light-emitting element function as display elements.

[0103] The display device of this embodiment has a function of detecting light by using a light receiving and emitting element, which can detect light having a shorter wavelength than light emitted by the light receiving and emitting element itself.

[0104] When the light emitting / receiving element is used in an image sensor, the display device of this embodiment can capture an image using the light emitting / receiving element. For example, the display device of this embodiment can be used as a scanner.

[0105] When the light emitting / receiving element is used as a touch sensor, the display device of this embodiment can detect the proximity or contact of an object by using the light emitting / receiving element.

[0106] The light emitting / receiving element functions as a photoelectric conversion element that detects light incident on the light emitting / receiving element and generates electric charge. The amount of electric charge generated by the light emitting / receiving element is determined based on the amount of light incident on the light emitting / receiving element.

[0107] The light receiving / emitting element can be fabricated by adding an active layer of a light receiving element to the above-mentioned light emitting element.

[0108] The light emitting / receiving element may have, for example, a pn-type or pin-type photodiode structure.

[0109] In particular, it is preferable to use an active layer of an organic photodiode having a layer containing an organic compound for the light-receiving and light-emitting element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0110] The display device of one embodiment of the present invention will be described more specifically below with reference to the drawings.

[0111] [Display device] 6A to 6D and 6F each show a cross-sectional view of a display device according to one embodiment of the present invention.

[0112] A display device 200A shown in FIG. 6A includes, between a substrate 201 and a substrate 209, a layer 203 having a light receiving element, a functional layer 205, and a layer 207 having a light emitting element.

[0113] The display device 200A has a configuration in which red (R), green (G), and blue (B) light are emitted from a layer 207 having light emitting elements.

[0114] The light receiving elements included in the layer 203 having light receiving elements can detect light incident from outside the display device 200A.

[0115] A display device 200B shown in FIG. 6B includes, between a substrate 201 and a substrate 209, a layer 204 having light emitting / receiving elements, a functional layer 205, and a layer 207 having light emitting elements.

[0116] The display device 200B has a configuration in which green (G) light and blue (B) light are emitted from the layer 207 having light-emitting elements, and red (R) light is emitted from the layer 204 having light-emitting elements. Note that in the display device of one embodiment of the present invention, the color of light emitted from the layer 204 having light-emitting elements is not limited to red. Furthermore, the color of light emitted from the layer 207 having light-emitting elements is not limited to a combination of green and blue.

[0117] The light emitting / receiving elements included in the layer 204 having the light emitting / receiving elements can detect light incident from the outside of the display device 200B. The light emitting / receiving elements can detect, for example, one or both of green (G) light and blue (B) light.

[0118] The functional layer 205 has a circuit for driving the light receiving element or the light receiving / emitting element, and a circuit for driving the light emitting element. The functional layer 205 may be provided with a switch, a transistor, a capacitance, a resistor, a wiring, a terminal, and the like. Note that when the light emitting element and the light receiving element are driven by a passive matrix method, a configuration without providing a switch or a transistor may be used.

[0119] The display device according to one embodiment of the present invention may have a function of detecting an object such as a finger touching the display device (a function as a touch panel). For example, as shown in FIG. 6C, light emitted by a light-emitting element in the layer 207 having light-emitting elements is reflected by a finger 202 touching the display device 200A, and the light-receiving element in the layer 203 having light-receiving elements detects the reflected light. In this way, it is possible to detect that the finger 202 has touched the display device 200A. In addition, in the display device 200B, light emitted by a light-emitting element in the layer 207 having light-emitting elements is reflected by a finger touching the display device 200B, and the reflected light can be detected by a light-receiving element in the layer 204 having light-receiving elements. Note that, in the following description, an example will be given in which light emitted from a light-emitting element is reflected by an object, but the light may be scattered by the object.

[0120] The display device according to one embodiment of the present invention may have a function of detecting or capturing an image of an object that is close to (not in contact with) the display device, as shown in FIG. 6D.

[0121] The display device according to one embodiment of the present invention may have a function of detecting a fingerprint of a finger 202. Fig. 6E shows an image of an image captured by the display device according to one embodiment of the present invention. In Fig. 6E, the outline of finger 202 is shown by a dashed line within imaging range 263, and the outline of contact portion 261 is shown by a dashed line. Within contact portion 261, a high-contrast image of fingerprint 262 can be captured due to differences in the amount of light incident on a light receiving element (or a light receiving / emitting element).

[0122] The display device of one embodiment of the present invention can also function as a pen tablet. Fig. 6F shows a state in which the tip of a stylus 208 is in contact with a substrate 209 and is slid in the direction of the dashed arrow.

[0123] As shown in FIG. 6F, the scattered light generated between the tip of stylus 208 and the contact surface of substrate 209 is incident on a light receiving element (or a light receiving / emitting element) located at the overlapping portion with the contact surface, thereby enabling the position of the tip of stylus 208 to be detected with high accuracy.

[0124] 6G shows an example of a trajectory 266 of the stylus 208 detected by the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can detect the position of a detectable object such as the stylus 208 with high positional accuracy, and therefore can perform high-resolution drawing in a drawing application or the like. Furthermore, unlike the case where a capacitive touch sensor or an electromagnetic induction touch pen is used, the display device can detect the position of even a highly insulating detectable object, and therefore the material of the tip of the stylus 208 is not limited, and various writing implements (for example, a brush, a glass pen, a feather pen, etc.) can be used.

[0125] [Pixels] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix, and each pixel has a plurality of sub-pixels, each of which has one light-emitting element, one light-receiving light-emitting element, or one light-receiving element.

[0126] Each of the pixels has one or more of a sub-pixel having a light-emitting element, a sub-pixel having a light-receiving element, and a sub-pixel having a light-receiving or light-emitting element.

[0127] For example, a pixel has multiple (eg, three or four) sub-pixels that have a light-emitting element, and one sub-pixel that has a light-receiving element.

[0128] The light receiving element may be provided in all pixels or in some pixels. Also, one pixel may have multiple light receiving elements. Also, one light receiving element may be provided across multiple pixels. The resolution of the light receiving element and the resolution of the light emitting element may be different from each other.

[0129] When a pixel has three subpixels each having a light-emitting element, the three subpixels may be subpixels of three colors, R, G, and B, or subpixels of three colors, yellow (Y), cyan (C), and magenta (M), etc. When a pixel has four subpixels each having a light-emitting element, the four subpixels may be subpixels of four colors, R, G, B, and white (W), or subpixels of four colors, R, G, B, and Y, etc.

[0130] 6H, 6J, 6K, and 6L show an example of a pixel having a plurality of subpixels each having a light-emitting element and one subpixel each having a light-receiving element. Note that the arrangement of the subpixels shown in this embodiment is not limited to the order shown in the drawings. For example, the positions of the subpixels (B) and (G) may be reversed.

[0131] Each of the pixels shown in Figures 6H, 6J, and 6K has a sub-pixel (PD) having a light receiving function, a sub-pixel (R) that emits red light, a sub-pixel (G) that emits green light, and a sub-pixel (B) that emits blue light.

[0132] A matrix arrangement is applied to the pixel shown in Fig. 6H, and a stripe arrangement is applied to the pixel shown in Fig. 6J. Fig. 6K shows an example in which a sub-pixel (R) that emits red light, a sub-pixel (G) that emits green light, and a sub-pixel (B) that emits blue light are arranged in a single horizontal column, and a sub-pixel (PD) having a light receiving function is arranged below them. That is, in Fig. 6K, the sub-pixels (R), (G), and (B) are arranged in the same row, and are arranged in a different row from the sub-pixel (PD).

[0133] The pixel shown in FIG. 6L has a subpixel (X) that exhibits light other than R, G, and B in addition to the pixel configuration shown in FIG. 6K. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), and infrared light (IR). When the subpixel (X) exhibits infrared light, the subpixel (PD) having a light receiving function preferably has a function of detecting infrared light. The subpixel (PD) having a light receiving function may have a function of detecting both visible light and infrared light. The wavelength of light detected by the light receiving element can be determined according to the application of the sensor.

[0134] Alternatively, for example, a pixel has a plurality of sub-pixels each having a light-emitting element, and has one sub-pixel each having a light-receiving or light-emitting element.

[0135] A display device having light receiving and emitting elements does not require changing the pixel arrangement to incorporate a light receiving function into the pixel, so that it is possible to add an imaging function and / or a sensing function to the display section without reducing the aperture ratio and definition.

[0136] Note that the light emitting / receiving elements may be provided in all or some of the pixels, and one pixel may have a plurality of light emitting / receiving elements.

[0137] 7A to 7D show an example of a pixel having a plurality of sub-pixels each having a light-emitting element, and one sub-pixel each having a light-receiving or light-emitting element.

[0138] 7A is a striped arrangement, and has a subpixel (R PD) that emits red light and has a light receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. In a display device in which a pixel is composed of three subpixels, R, G, and B, a light-emitting element used in the R subpixel can be replaced with a light-receiving element to fabricate a display device in which the pixel has a light receiving function.

[0139] The pixel shown in FIG. 7B has a subpixel (R·PD) that emits red light and has a light receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. The subpixel (R·PD) is arranged in a column different from the subpixels (G) and (B). The subpixels (G) and (B) are arranged alternately in the same column, with one provided in an odd-numbered row and the other provided in an even-numbered row. Note that the subpixels arranged in a column different from the subpixels of the other colors are not limited to red (R) and may be green (G) or blue (B).

[0140] 7C is arranged in a matrix and has a subpixel (R PD) that emits red light and has a light receiving function, a subpixel (G) that emits green light, a subpixel (B) that emits blue light, and a subpixel (X) that emits light other than R, G, and B. Even in a display device in which a pixel is composed of four subpixels, R, G, B, and X, a display device in which the pixel has a light receiving function can be fabricated by replacing the light emitting element used in the R subpixel with a light receiving / emitting element.

[0141] FIG. 7D shows two pixels, each of which is made up of three subpixels surrounded by dotted lines. The pixel shown in FIG. 7D has a subpixel (R·PD) that emits red light and has a light receiving function, a subpixel (G) that emits green light, and a subpixel (B) that emits blue light. In the left pixel shown in FIG. 7D, the subpixel (G) is arranged in the same row as the subpixel (R·PD), and the subpixel (B) is arranged in the same column as the subpixel (R·PD). In the right pixel shown in FIG. 7D, the subpixel (G) is arranged in the same row as the subpixel (R·PD), and the subpixel (B) is arranged in the same column as the subpixel (G). In the pixel layout shown in FIG. 7D, the subpixels (R·PD), (G), and (B) are arranged repeatedly in both odd and even rows, and in each column, subpixels of different colors are arranged in the odd and even rows.

[0142] Fig. 7E shows four pixels to which a Pentile arrangement is applied, and two adjacent pixels have sub-pixels that emit two different colors of light. Note that the shape of the sub-pixels shown in Fig. 7E shows the top shape of the light-emitting element or light-receiving element of the sub-pixel. Fig. 7F shows a modified example of the pixel arrangement shown in Fig. 7E.

[0143] The upper left pixel and the lower right pixel shown in Fig. 7E have a subpixel (R·PD) that emits red light and has a light receiving function, and a subpixel (G) that emits green light. The lower left pixel and the upper right pixel shown in Fig. 7E have a subpixel (G) that emits green light, and a subpixel (B) that emits blue light.

[0144] The upper left pixel and the lower right pixel shown in Fig. 7F have a sub-pixel (R·PD) that emits red light and has a light-receiving function, and a sub-pixel (G) that emits green light. The lower left pixel and the upper right pixel shown in Fig. 7F have a sub-pixel (R·PD) that emits red light and has a light-receiving function, and a sub-pixel (B) that emits blue light.

[0145] In Fig. 7E, each pixel is provided with a sub-pixel (G) that emits green light. On the other hand, in Fig. 7F, each pixel is provided with a sub-pixel (R·PD) that emits red light and has a light receiving function. Since each pixel is provided with a sub-pixel that has a light receiving function, the configuration shown in Fig. 7F can capture images with higher resolution than the configuration shown in Fig. 7E. This can improve the accuracy of biometric authentication, for example.

[0146] The top surface shapes of the light-emitting element and the light-receiving / light-emitting element are not particularly limited, and may be a circle, an ellipse, a polygon, a polygon with rounded corners, etc. With respect to the top surface shape of the light-emitting element of the subpixel (G), Fig. 7E shows an example in which it is a circle, and Fig. 7F shows an example in which it is a square. The top surface shapes of the light-emitting element and the light-receiving / light-emitting element of each color may be different from each other, or may be the same for some or all of the colors.

[0147] The aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all of the colors. For example, the aperture ratio of the sub-pixel (G in FIG. 7E, sub-pixel (R·PD) in FIG. 7F) provided in each pixel may be smaller than the aperture ratios of the sub-pixels of the other colors.

[0148] Fig. 7G is a modified example of the pixel array shown in Fig. 7F. Specifically, the configuration of Fig. 7G is obtained by rotating the configuration of Fig. 7F by 45°. Although Fig. 7F has been described as one pixel being composed of two sub-pixels, it can also be considered as one pixel being composed of four sub-pixels as shown in Fig. 7G.

[0149] In FIG. 7G, a description will be given assuming that one pixel is composed of four sub-pixels surrounded by dotted lines. One pixel has two sub-pixels (R PD), one sub-pixel (G), and one sub-pixel (B). In this way, one pixel has multiple sub-pixels with a light receiving function, so that imaging can be performed with high resolution. This can improve the accuracy of biometric authentication. For example, the resolution of the imaging can be set to the root double of the resolution of the display.

[0150] A display device to which the configuration shown in FIG. 7F or 7G is applied has p (p is an integer of 2 or more) first light-emitting elements, q (q is an integer of 2 or more) second light-emitting elements, and r (r is an integer greater than p and greater than q) light-receiving and light-emitting elements. p and r satisfy r=2p. Furthermore, p, q, and r satisfy r=p+q. One of the first light-emitting elements and the second light-emitting elements emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0151] For example, when detecting a touch operation using a light receiving / emitting element, it is preferable that the light emitted from the light source is difficult for the user to see. Since blue light is less visible than green light, it is preferable to use a light emitting element that emits blue light as the light source. Therefore, it is preferable that the light receiving / emitting element has a function of receiving blue light.

[0152] As described above, pixels having various arrays can be applied to the display device of this embodiment mode.

[0153] [Device structure] Next, detailed structures of a light-emitting element, a light-receiving element, and a light-receiving and light-emitting element that can be used in the display device of one embodiment of the present invention will be described.

[0154] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward the substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0155] In this embodiment, a top emission type display device will be described as an example.

[0156] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (light-emitting elements, light-emitting layers, etc.), when describing matters common to each element, the alphabet will be omitted. For example, when describing matters common to the light-emitting layer 283R and the light-emitting layer 283G, etc., the light-emitting layer 283 may be written as "light-emitting layer 283."

[0157] A display device 280A shown in FIG. 8A has a light receiving element 270PD, a light emitting element 270R that emits red (R) light, a light emitting element 270G that emits green (G) light, and a light emitting element 270B that emits blue (B) light.

[0158] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275, which are stacked in this order. The light-emitting element 270R has a light-emitting layer 283R, the light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283R has a light-emitting material that emits red light, the light-emitting layer 283G has a light-emitting material that emits green light, and the light-emitting layer 283B has a light-emitting material that emits blue light.

[0159] The light emitting element is an electroluminescent element that emits light toward the common electrode 275 by applying a voltage between the pixel electrode 271 and the common electrode 275 .

[0160] The light receiving element 270PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0161] The light receiving element 270PD is a photoelectric conversion element that receives light incident from outside the display device 280A and converts it into an electrical signal.

[0162] In the present embodiment, in both the light-emitting element and the light-receiving element, the pixel electrode 271 functions as an anode, and the common electrode 275 functions as a cathode. In other words, the light-receiving element detects light incident on the light-receiving element, generates charges, and extracts them as a current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving the light-receiving element.

[0163] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light receiving element 270PD. The layers of the light receiving element 270PD other than the active layer 273 can be configured in common with the light emitting element. Therefore, the light receiving element 270PD can be formed in parallel with the formation of the light emitting element by simply adding a process of forming the active layer 273 to the manufacturing process of the light emitting element. In addition, the light emitting element and the light receiving element 270PD can be formed on the same substrate. Therefore, the light receiving element 270PD can be built into the display device without significantly increasing the manufacturing process.

[0164] In the display device 280A, an example is shown in which the light receiving element 270PD and the light emitting element have a common configuration, except that the active layer 273 of the light receiving element 270PD and the light emitting layer 283 of the light emitting element are separately manufactured. However, the configuration of the light receiving element 270PD and the light emitting element is not limited to this. The light receiving element 270PD and the light emitting element may have layers that are separately manufactured from each other, in addition to the active layer 273 and the light emitting layer 283. It is preferable that the light receiving element 270PD and the light emitting element have one or more layers that are used in common (common layers). This allows the light receiving element 270PD to be built into the display device without significantly increasing the number of manufacturing steps.

[0165] A conductive film that transmits visible light is used for the electrode from which light is extracted, between the pixel electrode 271 and the common electrode 275. In addition, it is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

[0166] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting element of the display device of this embodiment. Therefore, it is preferable that one of a pair of electrodes of the light-emitting element has an electrode (semi-transmissive / semi-reflective electrode) that is transparent and reflective to visible light, and the other has an electrode (reflective electrode) that is reflective to visible light. When the light-emitting element has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be strengthened.

[0167] The semi-transmissive / semi-reflective electrode may have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0168] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode for the light emitting element that has a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 In addition, when the light-emitting element emits near-infrared light (light having a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectance of these electrodes for near-infrared light preferably satisfies the above-mentioned numerical range, similarly to the transmittance or reflectance for visible light.

[0169] The light-emitting element has at least a light-emitting layer 283. The light-emitting element may further have, as a layer other than the light-emitting layer 283, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like.

[0170] For example, the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer in common. Also, the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer formed differently from each other.

[0171] The hole injection layer is a layer that injects holes from the anode to the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron accepting material).

[0172] In the light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In the light-receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. Examples of the hole transport material include 10 -6 cm 2 A material having a hole mobility of 100 / Vs or more is preferable. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton) is preferable.

[0173] In the light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In the light-receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is, for example, 1×10 -6 cm 2A substance having an electron mobility of 100 / Vs or more is preferable. Note that, other substances may be used as long as they have a higher electron transporting property than holes. As the electron transporting material, a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, and the like, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other materials having a high electron transporting property such as π-electron deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds may be used.

[0174] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties. As the material with high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the material with high electron injection properties, a composite material containing an electron transport material and a donor material (electron donor material) can also be used.

[0175] The light-emitting layer 283 is a layer containing a light-emitting substance. The light-emitting layer 283 can have one or more types of light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. In addition, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0176] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0177] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0178] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, and rare earth metal complexes.

[0179] The light-emitting layer 283 may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole transport material and an electron transport material may be used. In addition, as the one or more organic compounds, a bipolar material or a TADF material may be used.

[0180] The light-emitting layer 283 preferably includes, for example, a phosphorescent material, and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. With this configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from an exciplex to a light-emitting material (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest energy absorption band of the light-emitting material, energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low voltage operation, and long life of the light-emitting element can be simultaneously achieved.

[0181] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole transporting material is equal to or higher than the HOMO level of the electron transporting material. It is preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole transporting material is equal to or higher than the LUMO level of the electron transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0182] The formation of an exciplex can be confirmed, for example, by comparing the emission spectrum of a hole transport material, the emission spectrum of an electron transport material, and the emission spectrum of a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectrum of each material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole transport material, the transient PL of an electron transport material, and the transient PL of a mixed film obtained by mixing these materials, and observing the difference in transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component than the transient PL lifetime of each material, or the proportion of delayed components becoming larger. In addition, the above-mentioned transient PL may be read as transient electroluminescence (EL). In other words, the formation of an exciplex can also be confirmed by comparing the transient EL of a hole transport material, the transient EL of a material having electron transport properties, and the transient EL of a mixed film obtained by mixing these materials, and observing the difference in transient response.

[0183] The active layer 273 includes a semiconductor. Examples of the semiconductor include an inorganic semiconductor such as silicon, and an organic semiconductor including an organic compound. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer 273 is shown. By using an organic semiconductor, the light emitting layer 283 and the active layer 273 can be formed by the same method (for example, a vacuum deposition method), which is preferable because a common manufacturing device can be used.

[0184] The active layer 273 is made of an n-type semiconductor material such as fullerene (e.g., C 60 , C 70Examples of electron-accepting organic semiconductor materials include organic semiconductor materials such as fullerene derivatives, etc. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Fullerenes have extremely high electron-accepting (acceptor) properties because of their deep LUMO level. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties are high, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the large spread of π-electrons. High electron-accepting properties are useful as light-receiving elements because they cause charge separation quickly and efficiently. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region as compared to the above.

[0185] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0186] Examples of the p-type semiconductor material of the active layer 273 include electron-donating organic semiconductor materials such as copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0187] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0188] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0189] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material, and an organic semiconductor material with a nearly planar shape as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, which can increase the carrier transportability.

[0190] For example, the active layer 273 is preferably formed by co-evaporation of an n-type semiconductor and a p-type semiconductor.

[0191] The light-emitting element and the light-receiving element may be made of either a low molecular weight compound or a high molecular weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element and the light-receiving element may be formed by a deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0192] Display device 280B shown in FIG. 8B differs from display device 280A in that light receiving element 270PD and light emitting element 270R have the same configuration.

[0193] The light receiving element 270PD and the light emitting element 270R have in common the active layer 273 and the light emitting layer 283R.

[0194] Here, it is preferable that the light receiving element 270PD has a common configuration with the light emitting element that emits light of a longer wavelength than the light to be detected. For example, the light receiving element 270PD configured to detect blue light can have the same configuration as one or both of the light emitting element 270R and the light emitting element 270G. For example, the light receiving element 270PD configured to detect green light can have the same configuration as the light emitting element 270R.

[0195] By making the light receiving element 270PD and the light emitting element 270R into a common structure, the number of film forming steps and the number of masks can be reduced compared to a structure in which the light receiving element 270PD and the light emitting element 270R have layers that are separately manufactured, and therefore the manufacturing steps and manufacturing costs of the display device can be reduced.

[0196] In addition, by making the light receiving element 270PD and the light emitting element 270R into a common configuration, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. This makes it possible to increase the aperture ratio of the pixel and increase the light extraction efficiency of the display device. This makes it possible to extend the life of the light emitting element. In addition, the display device can express high brightness. In addition, it is also possible to increase the resolution of the display device.

[0197] The light-emitting layer 283R has a light-emitting material that emits red light. The active layer 273 has an organic compound that absorbs light with a shorter wavelength than red (for example, one or both of green light and blue light). It is preferable that the active layer 273 has an organic compound that does not easily absorb red light and absorbs light with a shorter wavelength than red. This allows the light-emitting element 270R to efficiently extract red light, and the light-receiving element 270PD to detect light with a shorter wavelength than red with high accuracy.

[0198] Furthermore, in the display device 280B, an example is shown in which the light emitting element 270R and the light receiving element 270PD have the same configuration, but the light emitting element 270R and the light receiving element 270PD may have optical adjustment layers of different thicknesses.

[0199] Display device 280C shown in Figures 9A and 9B has light-receiving and light-emitting elements 270R·PD that emit red (R) light and have a light-receiving function, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0200] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275, which are stacked in this order. The light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283G has a light-emitting material that emits green light, and the light-emitting layer 283B has a light-emitting material that emits blue light.

[0201] The light emitting / receiving elements 270R·PD have a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, a light emitting layer 283R, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0202] The light receiving / emitting elements 270R and 270PD of the display device 280C have the same configuration as the light emitting element 270R and the light receiving element 270PD of the display device 280B. The light emitting elements 270G and 270B of the display device 280C also have the same configuration as the light emitting elements 270G and 270B of the display device 280B.

[0203] Fig. 9A shows a case where the light emitting / receiving elements 270R and PD function as light emitting elements. Fig. 9A shows an example where the light emitting element 270B emits blue light, the light emitting element 270G emits green light, and the light emitting / receiving elements 270R and PD emit red light.

[0204] Fig. 9B shows a case where the light receiving / emitting elements 270R·PD function as light receiving elements. Fig. 9B shows an example in which the light receiving / emitting elements 270R·PD detect the blue light emitted by the light emitting element 270B and the green light emitted by the light emitting element 270G.

[0205] Each of the light emitting element 270B, the light emitting element 270G, and the light receiving and emitting elements 270R and PD has a pixel electrode 271 and a common electrode 275. In this embodiment, a case will be described as an example in which the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode.

[0206] In this embodiment, as in the light-emitting element, the pixel electrode 271 also functions as an anode and the common electrode 275 also functions as a cathode in the light-receiving / light-emitting element 270R / PD. In other words, by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving the light-receiving / light-emitting element 270R / PD, the light-receiving / light-emitting element 270R / PD can detect light incident on the light-receiving / light-emitting element 270R / PD, generate electric charge, and extract it as a current.

[0207] 9A and 9B can be considered to have a configuration in which an active layer 273 is added to a light-emitting element. In other words, the light-emitting element 270R / PD can be formed in parallel with the formation of the light-emitting element by simply adding a process for forming the active layer 273 to the manufacturing process of the light-emitting element. In addition, the light-emitting element and the light-emitting element can be formed on the same substrate. Therefore, it is possible to provide the display unit with either or both of an imaging function and a sensing function without significantly increasing the number of manufacturing processes.

[0208] The stacking order of the light emitting layer 283R and the active layer 273 is not limited. Figures 9A and 9B show an example in which the active layer 273 is provided on the hole transport layer 282, and the light emitting layer 283R is provided on the active layer 273. The light emitting layer 283R may be provided on the hole transport layer 282, and the active layer 273 may be provided on the light emitting layer 283R.

[0209] 9A and 9B, the active layer 273 and the light-emitting layer 283R may be in contact with each other. A buffer layer may be sandwiched between the active layer 273 and the light-emitting layer 283R. As the buffer layer, at least one layer selected from a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and the like may be used.

[0210] By providing a buffer layer between the active layer 273 and the light emitting layer 283R, it is possible to suppress the transfer of excitation energy from the light emitting layer 283R to the active layer 273. In addition, the buffer layer can be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light emitting / receiving element having a buffer layer between the active layer 273 and the light emitting layer 283R can obtain high light emitting efficiency.

[0211] Furthermore, the light emitting / receiving element may not have at least one layer among the hole injection layer 281, the hole transport layer 282, the electron transport layer 284, and the electron injection layer 285. Furthermore, the light emitting / receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0212] Furthermore, the light emitting / receiving element may have a layer serving as both the light emitting layer and the active layer, without having the active layer 273 and the light emitting layer 283R. As the layer serving as both the light emitting layer and the active layer, for example, a layer containing three materials, an n-type semiconductor that can be used for the active layer 273, a p-type semiconductor that can be used for the active layer 273, and a light emitting substance that can be used for the light emitting layer 283R, can be used.

[0213] Furthermore, it is preferable that the absorption band on the lowest energy side of the absorption spectrum of the mixed material of n-type semiconductor and p-type semiconductor does not overlap with the maximum peak of the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0214] In the light receiving / emitting element, a conductive film that transmits visible light is used for the electrode from which light is extracted, and a conductive film that reflects visible light is preferably used for the electrode from which light is not extracted.

[0215] The functions and materials of the layers constituting the light emitting / receiving element are similar to those of the layers constituting the light emitting element and the light receiving element, and therefore detailed description thereof will be omitted.

[0216] A detailed structure of a display device according to one embodiment of the present invention will be described below with reference to FIGS.

[0217] [Display device 100A] FIG. 10A shows a cross-sectional view of the display device 100A.

[0218] The display device 100A includes a light receiving element 110 and a light emitting element 190.

[0219] The light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115 stacked in this order. The buffer layer 192 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 has an organic compound. The buffer layer 194 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light. The display device 100A may further have a light-emitting element having a function of emitting infrared light.

[0220] The light receiving element 110 has a pixel electrode 191, a buffer layer 182, an active layer 183, a buffer layer 184, and a common electrode 115 stacked in this order. The buffer layer 182 may have a hole transport layer. The active layer 183 has an organic compound. The buffer layer 184 may have an electron transport layer. The light receiving element 110 has a function of detecting visible light. The light receiving element 110 may further have a function of detecting infrared light.

[0221] In the present embodiment, it is assumed that the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode in both the light emitting element 190 and the light receiving element 110. In other words, by driving the light receiving element 110 by applying a reverse bias between the pixel electrode 191 and the common electrode 115, the display device 100A can detect light incident on the light receiving element 110, generate charges, and extract them as a current.

[0222] The pixel electrode 191, the buffer layer 182, the active layer 183, the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 may each have a single layer structure or a multilayer structure.

[0223] The pixel electrode 191 is located on the insulating layer 214. Each pixel electrode 191 can be formed using the same material and in the same process. An end of the pixel electrode 191 is covered with a partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated from each other by the partition wall 216 (also referred to as being electrically separated).

[0224] An organic insulating film is suitable for the partition 216. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. The partition 216 is a layer that transmits visible light. Instead of the partition 216, a partition that blocks visible light may be provided.

[0225] The common electrode 115 is a layer shared by the light receiving element 110 and the light emitting element 190 .

[0226] The materials and thicknesses of the pair of electrodes of the light receiving element 110 and the light emitting element 190 can be made the same, which leads to a reduction in manufacturing cost of the display device and a simplification of the manufacturing process.

[0227] The display device 100A has a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, and the like between a pair of substrates (substrate 151 and substrate 152).

[0228] In the light receiving element 110, the buffer layer 182, the active layer 183, and the buffer layer 184, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be called organic layers (layers containing an organic compound). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. Note that, when the light receiving element 110 is configured to detect infrared light, the common electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0229] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives light 122 incident from the outside of the display device 100A and converts it into an electrical signal. The light 122 can also be said to be light emitted by the light emitting element 190 and reflected by an object. The light 122 may also be incident on the light receiving element 110 via a lens or the like provided in the display device 100A.

[0230] In the light-emitting element 190, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194, which are located between the pixel electrode 191 and the common electrode 115, can be collectively referred to as an EL layer. The EL layer has at least the light-emitting layer 193. As described above, the pixel electrode 191 preferably has a function of reflecting visible light. Furthermore, the common electrode 115 has a function of transmitting visible light. When the display device 100A has a configuration including a light-emitting element that emits infrared light, the common electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0231] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting element included in the display device of this embodiment mode.

[0232] The buffer layer 192 or the buffer layer 194 may function as an optical adjustment layer. By varying the thickness of the buffer layer 192 or the buffer layer 194, light of a specific color can be strengthened and extracted in each light-emitting element.

[0233] The light emitting element 190 has a function of emitting visible light. Specifically, the light emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115 (see emission 121).

[0234] A pixel electrode 191 of the light receiving element 110 is electrically connected to the source or drain of the transistor 131 through an opening provided in the insulating layer 214 .

[0235] A pixel electrode 191 of the light-emitting element 190 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214 .

[0236] The transistor 131 and the transistor 132 are in contact with each other on the same layer (substrate 151 in FIG. 10A).

[0237] At least a part of the circuit electrically connected to the light receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light emitting element 190. This allows the thickness of the display device to be thinner and the manufacturing process to be simplified compared to the case where the two circuits are formed separately.

[0238] The light receiving element 110 and the light emitting element 190 are preferably covered with a protective layer 116. In Fig. 10A, the protective layer 116 is provided on and in contact with the common electrode 115. By providing the protective layer 116, it is possible to prevent impurities such as water from entering the light receiving element 110 and the light emitting element 190, and to improve the reliability of the light receiving element 110 and the light emitting element 190. In addition, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142.

[0239] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and the light-receiving element 110.

[0240] Here, the light receiving element 110 detects the light emitted by the light emitting element 190 reflected by the object. However, the light emitted by the light emitting element 190 may be reflected inside the display device 100A and may be incident on the light receiving element 110 without passing through the object. The light shielding layer 158 can suppress the influence of such stray light. For example, if the light shielding layer 158 is not provided, the light 123 emitted by the light emitting element 190 may be reflected by the substrate 152, and the reflected light 124 may be incident on the light receiving element 110. By providing the light shielding layer 158, it is possible to suppress the reflected light 124 from being incident on the light receiving element 110. This can reduce noise and increase the sensitivity of the sensor using the light receiving element 110.

[0241] The light-shielding layer 158 may be made of a material that blocks light emitted from the light-emitting element. The light-shielding layer 158 preferably absorbs visible light. For example, the light-shielding layer 158 may be made of a black matrix using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer 158 may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0242] [Display device 100B] 10B and 10C are cross-sectional views of the display device 100B. In the following description of the display device, the description of the same configuration as the display device described above may be omitted.

[0243] The display device 100B includes a light emitting element 190B, a light emitting element 190G, and light receiving / emitting elements 190R and PD.

[0244] The light emitting element 190B has, stacked in this order, a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115. The light emitting element 190B has a function of emitting blue light 121B.

[0245] The light emitting element 190G has, stacked in this order, a pixel electrode 191, a buffer layer 192G, a light emitting layer 193G, a buffer layer 194G, and a common electrode 115. The light emitting element 190G has a function of emitting green light 121G.

[0246] The light emitting / receiving elements 190R / PD have a pixel electrode 191, a buffer layer 192R, an active layer 183, a light emitting layer 193R, a buffer layer 194R, and a common electrode 115 stacked in this order. The light emitting / receiving elements 190R / PD have a function of emitting red light 121R and a function of detecting light 122.

[0247] Fig. 10B shows a case where the light emitting / receiving elements 190R and PD function as light emitting elements. Fig. 10B shows an example where the light emitting element 190B emits blue light, the light emitting element 190G emits green light, and the light emitting / receiving elements 190R and PD emit red light.

[0248] Fig. 10C shows a case where the light receiving / emitting elements 190R and PD function as light receiving elements. Fig. 10C shows an example in which the light receiving / emitting elements 190R and PD detect the blue light emitted by the light emitting element 190B and the green light emitted by the light emitting element 190G.

[0249] The display device 100B has light receiving / emitting elements 190R and PD, a light emitting element 190G, a light emitting element 190B, a transistor 132, and the like between a pair of substrates (substrate 151 and substrate 152).

[0250] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0251] The light emitting / receiving element and the light emitting element are preferably covered with a protective layer 116. Moreover, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142. A light blocking layer 158 is provided on the surface of the substrate 152 facing the substrate 151.

[0252] [Display device 100C] FIG. 11A shows a cross-sectional view of the display device 100C.

[0253] The display device 100C includes a light receiving element 110 and a light emitting element 190.

[0254] The light-emitting element 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 in this order. The common layer 112 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 has an organic compound. The common layer 114 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light. The display device 100C may further have a light-emitting element having a function of emitting infrared light.

[0255] The light receiving element 110 has a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 stacked in this order. The active layer 183 contains an organic compound. The light receiving element 110 has a function of detecting visible light. The light receiving element 110 may further have a function of detecting infrared light.

[0256] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a multilayer structure.

[0257] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0258] The common layer 112, the common layer 114, and the common electrode 115 are layers that are used in common for the light receiving element 110 and the light emitting element 190. By making at least a part of the layers constituting the light receiving element 110 and the light emitting element 190 have a common structure, the manufacturing process of the display device can be reduced, which is preferable.

[0259] The display device 100C includes a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, and the like between a pair of substrates (substrate 151 and substrate 152).

[0260] The light receiving element 110 and the light emitting element 190 are preferably covered with a protective layer 116. In addition, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0261] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is provided at a position overlapping the light emitting element 190, but is not provided at a position overlapping the light receiving element 110.

[0262] 11B, the resin layer 159 can be configured to be provided at a position overlapping the light emitting element 190 and to have an opening 159p at a position overlapping the light receiving element 110. Alternatively, the resin layer 159 can be configured to be provided in an island shape at a position overlapping the light emitting element 190 and not at a position overlapping the light receiving element 110, as shown in FIG.

[0263] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and the light-receiving element 110.

[0264] Here, the light receiving element 110 detects the light emitted by the light emitting element 190 reflected by the object. However, there are cases where the light emitted by the light emitting element 190 is reflected in the display device 100C and enters the light receiving element 110 without passing through the object. The light shielding layer 158 can absorb such stray light and reduce the stray light entering the light receiving element 110. For example, the light shielding layer 158 can absorb the stray light 123a that passes through the resin layer 159 and is reflected by the surface of the substrate 152 on the substrate 151 side. In addition, the light shielding layer 158 can absorb the stray light 123b before it reaches the resin layer 159. This can reduce the stray light entering the light receiving element 110. Therefore, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased. In particular, it is preferable that the light shielding layer 158 is located close to the light emitting element 190, since the stray light can be further reduced. Furthermore, if the light blocking layer 158 is located close to the light emitting element 190, the viewing angle dependency of the display can be suppressed, which is also preferable from the viewpoint of improving the display quality.

[0265] Furthermore, the light-detecting range of the light receiving element 110 can be controlled by providing the light-shielding layer 158. When the light-shielding layer 158 is located away from the light receiving element 110, the imaging range is narrowed and the imaging resolution can be increased.

[0266] When the resin layer 159 has an opening, the light-shielding layer 158 preferably covers at least a part of the opening and at least a part of the side surface of the resin layer 159 exposed at the opening.

[0267] When the resin layer 159 is provided in an island shape, it is preferable that the light blocking layer 158 covers at least a part of the side surface of the resin layer 159 .

[0268] In this way, since the light-shielding layer 158 is provided along the shape of the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110 (specifically, the light-receiving region of the light-receiving element 110). This makes it possible to reduce sensor noise, increase the imaging resolution, and suppress the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the imaging quality of the display device.

[0269] The resin layer 159 is a layer that transmits the light emitted from the light emitting element 190. Examples of materials for the resin layer 159 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. The structure provided between the substrate 152 and the light shielding layer 158 is not limited to a resin layer, and an inorganic insulating film or the like may be used. The thicker the structure, the greater the difference between the distance from the light shielding layer to the light receiving element and the distance from the light shielding layer to the light emitting element. An organic insulating film such as a resin is suitable for the structure because it is easy to form a thick film.

[0270] In order to compare the distance from the light-shielding layer 158 to the light-receiving element 110 with the distance from the light-shielding layer 158 to the light-emitting element 190, for example, the shortest distance L1 from the end of the light-shielding layer 158 on the light-receiving element 110 side to the common electrode 115 and the shortest distance L2 from the end of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode 115 can be used. Since the shortest distance L2 is shorter than the shortest distance L1, stray light from the light-emitting element 190 can be suppressed and the sensitivity of the sensor using the light-receiving element 110 can be increased. In addition, the viewing angle dependency of the display can be suppressed. Since the shortest distance L1 is longer than the shortest distance L2, the imaging range of the light-receiving element 110 can be narrowed and the imaging resolution can be increased.

[0271] In addition, by configuring the adhesive layer 142 so that the portion overlapping the light receiving element 110 is thicker than the portion overlapping the light emitting element 190, a difference can be created between the distance from the light shielding layer 158 to the light receiving element 110 and the distance from the light shielding layer 158 to the light emitting element 190.

[0272] A more detailed configuration of the display device according to one embodiment of the present invention will be described below with reference to FIGS.

[0273] [Display device 100D] FIG. 12 shows a perspective view of the display device 100D, and FIG. 13 shows a cross-sectional view of the display device 100D.

[0274] The display device 100D has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 12, the substrate 152 is indicated by a dashed line.

[0275] The display device 100D has a display unit 162, a circuit 164, wiring 165, etc. Fig. 12 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100D. Therefore, the configuration shown in Fig. 12 can also be said to be a display module having the display device 100D, an IC (integrated circuit), and an FPC (flexible printed circuit).

[0276] The circuit 164 can be, for example, a scanning line driver circuit.

[0277] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.

[0278] 12 shows an example in which an IC 173 is provided on a substrate 151 by a chip on glass (COG) method or a chip on film (COF) method. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 173. Note that the display device 100D and the display module may be configured without an IC. Also, the IC may be mounted on an FPC by a COF method or the like.

[0279] Figure 13 shows an example of a cross section of the display device 100D shown in Figure 12, cutting a portion of the area including the FPC 172, a portion of the area including the circuit 164, a portion of the area including the display unit 162, and a portion of the area including the end portion.

[0280] A display device 100D shown in FIG. 13 includes, between a substrate 151 and a substrate 152, a transistor 241, a transistor 245, a transistor 246, a transistor 247, a light-emitting element 190B, a light-emitting element 190G, light-emitting elements 190R and 190PD, and the like.

[0281] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting elements 190R and PD. In Fig. 13, the space surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is sealed by the adhesive layer 142, and a solid sealing structure is applied.

[0282] The light-emitting element 190B has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of a transistor 247 through an opening provided in the insulating layer 214. The transistor 247 has a function of controlling driving of the light-emitting element 190B. An end of the pixel electrode 191 is covered with a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0283] The light-emitting element 190G has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b of the transistor 246 through an opening provided in the insulating layer 214. The transistor 246 has a function of controlling driving of the light-emitting element 190G.

[0284] The light emitting / receiving elements 190R and PD have a layered structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light emitting layer 193R, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to a conductive layer 222b of a transistor 245 through an opening provided in the insulating layer 214. The transistor 245 has a function of controlling the driving of the light emitting / receiving elements 190R and PD.

[0285] Light emitted by the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting elements 190R and PD is emitted towards the substrate 152. Light is incident on the light receiving / emitting elements 190R and PD via the substrate 152 and the adhesive layer 142. It is preferable that the substrate 152 and the adhesive layer 142 are made of a material that is highly transparent to visible light.

[0286] The pixel electrodes 191 of the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190R / PD can be manufactured from the same material and in the same process. The common layer 112, the common layer 114, and the common electrode 115 are used in common for the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190R / PD. The light receiving / emitting element 190R / PD has a configuration in which an active layer 183 is added to the configuration of a light emitting element that emits red light. Moreover, the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190R / PD can all have a common configuration except for the configurations of the active layer 183 and the light emitting layers 193 of each color. This makes it possible to add a light receiving function to the display unit 162 of the display device 100D without significantly increasing the number of manufacturing processes.

[0287] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 has openings at positions overlapping with the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD. By providing the light-shielding layer 158, the range in which the light-receiving / light-emitting element 190R / PD detects light can be controlled. As described above, it is preferable to control the light incident on the light-receiving / light-emitting element by adjusting the position of the opening of the light-shielding layer provided at a position overlapping with the light-receiving / light-emitting element 190R / PD. In addition, by providing the light-shielding layer 158, it is possible to prevent light from being directly incident on the light-receiving / light-emitting element 190R / PD from the light-emitting element 190 without passing through the object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0288] A transistor 241, a transistor 245, a transistor 246, and a transistor 247 are all formed over a substrate 151. These transistors can be manufactured using the same material and through the same process.

[0289] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and functions as a planarizing layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0290] It is preferable that at least one of the insulating layers covering the transistors is made of a material that is difficult for impurities such as water and hydrogen to diffuse into. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistors from the outside, thereby improving the reliability of the display device.

[0291] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used. In addition, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. In addition, two or more of the above insulating films may be stacked. Note that a base film may be provided between the substrate 151 and the transistor. The above inorganic insulating film may also be used for the base film.

[0292] Here, the organic insulating film often has a lower barrier property than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 100D. This makes it possible to suppress impurities from entering through the organic insulating film from the end of the display device 100D. Alternatively, the organic insulating film may be formed so that the end of the organic insulating film is located inside the end of the display device 100D, so that the organic insulating film is not exposed at the end of the display device 100D.

[0293] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0294] By providing a protective layer 116 covering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD, it is possible to prevent impurities such as water from entering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD, thereby improving the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving / light-emitting element 190R / PD.

[0295] 13, an opening is formed in the insulating layer 214. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. This makes it possible to improve the reliability of the display device 100D.

[0296] In a region 228 near the end of the display device 100D, the insulating layer 215 and the protective layer 116 are preferably in contact with each other through an opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 116 are in contact with each other. This makes it possible to prevent impurities from entering the display unit 162 from the outside through the organic insulating film. This makes it possible to improve the reliability of the display device 100D.

[0297] The protective layer 116 may have a single layer or a laminated structure. For example, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0298] The transistor 241, the transistor 245, the transistor 246, and the transistor 247 each have a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate. Here, the same hatched pattern is applied to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0299] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. In addition, either a top-gate type or a bottom-gate type transistor may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0300] The transistor 241, the transistor 245, the transistor 246, and the transistor 247 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and supplied with the same signal to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0301] The crystallinity of a semiconductor material used in a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially having a crystalline region) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0302] The semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single crystal silicon).

[0303] The semiconductor layer preferably contains, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0304] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer.

[0305] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include In:M:Zn=1:1:1 or a composition thereabout, In:M:Zn=1:1:1.2 or a composition thereabout, In:M:Zn=2:1:3 or a composition thereabout, In:M:Zn=3:1:2 or a composition thereabout, In:M:Zn=4:2:3 or a composition thereabout, In:M:Zn=4:2:4.1 or a composition thereabout, In:M:Zn=5:1:3 or a composition thereabout, In:M:Zn=5:1:6 or a composition thereabout, In:M:Zn=5:1:7 or a composition thereabout, In:M:Zn=5:1:8 or a composition thereabout, In:M:Zn=6:1:6 or a composition thereabout, In:M:Zn=5:2:5 or a composition thereabout, etc. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0306] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, it includes the case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, it includes the case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, it includes the case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0307] The transistors included in the circuit 164 and the transistors included in the display portion 162 may have the same structure or different structures. The transistors included in the circuit 164 may all have the same structure or may have two or more types. Similarly, the transistors included in the display portion 162 may all have the same structure or may have two or more types.

[0308] A connection portion 244 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. On the upper surface of the connection portion 244, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. This allows the connection portion 244 and the FPC 172 to be electrically connected via the connection layer 242.

[0309] Various optical members can be disposed on the outside of the substrate 152. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches due to use, an impact absorbing layer, and the like may be disposed on the outside of the substrate 152.

[0310] The substrate 151 and the substrate 152 can each be made of glass, quartz, ceramic, sapphire, resin, etc. When the substrate 151 and the substrate 152 are made of a flexible material, the flexibility of the display device can be increased.

[0311] As the adhesive layer, various curing adhesives such as a photo-curing adhesive such as an ultraviolet curing adhesive, a reaction curing adhesive, a heat curing adhesive, and an anaerobic adhesive can be used. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, a material with low moisture permeability such as epoxy resin is preferable. A two-liquid mixed resin may also be used. An adhesive sheet or the like may also be used.

[0312] The connection layer may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0313] The configurations and materials of the light emitting elements 190G and 190B and the light emitting / receiving elements 190R and PD can be referred to above.

[0314] Materials that can be used for the gate, source, and drain of a transistor as well as conductive layers such as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys containing such metals as main components, etc. Films containing these materials can be used as a single layer or a laminated structure.

[0315] As the conductive material having light transmitting properties, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. When using metal materials or alloy materials (or their nitrides), it is preferable to make them thin enough to have light transmitting properties. Also, a laminated film of the above materials can be used as the conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide, because the conductivity can be increased. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light emitting elements and light receiving elements (or light receiving and light emitting elements).

[0316] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0317] [Display device 100E] 14 and 15A show cross-sectional views of the display device 100E. The perspective view of the display device 100E is the same as that of the display device 100D (FIG. 9). FIG. 14 shows an example of a cross section of the display device 100E when a part of a region including the FPC 172, a part of the circuit 164, and a part of the display unit 162 are cut. FIG. 15A shows an example of a cross section of the display device 100E when a part of the display unit 162 is cut. FIG. 14 shows an example of a cross section of the display unit 162 when a region including the light receiving element 110 and the light emitting element 190R that emits red light is cut. FIG. 15A shows an example of a cross section of the display unit 162 when a region including the light emitting element 190G that emits green light and the light emitting element 190B that emits blue light is cut.

[0318] A display device 100E shown in FIGS. 14 and 15A includes a transistor 243, a transistor 248, a transistor 249, a transistor 240, a light-emitting element 190R, a light-emitting element 190G, a light-emitting element 190B, a light-receiving element 110, and the like between a substrate 153 and a substrate 154.

[0319] The resin layer 159 and the common electrode 115 are bonded via an adhesive layer 142, and a solid sealing structure is applied to the display device 100E.

[0320] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the insulating layer 157 are bonded together by an adhesive layer 156.

[0321] In the method of manufacturing the display device 100E, first, a first manufacturing substrate provided with an insulating layer 212, each transistor, a light receiving element 110, each light emitting element, etc. is bonded to a second manufacturing substrate provided with an insulating layer 157, a resin layer 159, a light shielding layer 158, etc., by an adhesive layer 142. Then, the first manufacturing substrate is peeled off, and a substrate 153 is attached to the exposed surface, and the second manufacturing substrate is peeled off, and a substrate 154 is attached to the exposed surface, so that each component formed on the first manufacturing substrate and the second manufacturing substrate is transferred to the substrate 153 and the substrate 154. The substrate 153 and the substrate 154 are preferably flexible. This can increase the flexibility of the display device 100E.

[0322] The insulating layer 212 and the insulating layer 157 can be formed using the inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215, respectively.

[0323] The light-emitting element 190R has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side. The pixel electrode 191 is connected to a conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to a conductive layer 222b of the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to a low-resistance region 231n through an opening provided in the insulating layer 215. That is, the pixel electrode 191 is electrically connected to the transistor 248. The transistor 248 has a function of controlling the driving of the light-emitting element 190R.

[0324] Similarly, the light-emitting element 190G has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 249 via the conductive layer 169 and the conductive layer 222b of the transistor 249. That is, the pixel electrode 191 is electrically connected to the transistor 249. The transistor 249 has a function of controlling the driving of the light-emitting element 190G.

[0325] The light-emitting element 190B has a layered structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to a low-resistance region 231n of the transistor 240 via a conductive layer 169 and a conductive layer 222b of the transistor 240. That is, the pixel electrode 191 is electrically connected to the transistor 240. The transistor 240 has a function of controlling driving of the light-emitting element 190B.

[0326] The light receiving element 110 has a layered structure in which a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are layered in this order from the insulating layer 214b side.

[0327] The edge of the pixel electrode 191 is covered with a partition wall 216. The pixel electrode 191 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light.

[0328] Light emitted from light emitting elements 190R, 190G, and 190B is emitted toward substrate 154. Light is incident on light receiving element 110 via substrate 154 and adhesive layer 142. For substrate 154, it is preferable to use a material that is highly transparent to visible light.

[0329] Each pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are used in common for the light receiving element 110 and the light emitting elements 190R, 190G, and 190B. The light receiving element 110 and the light emitting elements of each color can have a common configuration except for the configurations of the active layer 183 and the light emitting layer. This allows the light receiving element 110 to be built into the display device 100E without significantly increasing the number of manufacturing processes.

[0330] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light-emitting elements 190R, 190G, and 190B, but is not provided at a position overlapping the light-receiving element 110. The light-shielding layer 158 is provided to cover the surface of the insulating layer 157 facing the substrate 153, the side surface of the resin layer 159, and the surface of the resin layer 159 facing the substrate 153. The light-shielding layer 158 has openings at a position overlapping the light-receiving element 110 and at a position overlapping each of the light-emitting elements 190R, 190G, and 190B. By providing the light-shielding layer 158, the range in which the light-receiving element 110 detects light can be controlled. In addition, by having the light-shielding layer 158, it is possible to suppress the light from the light-emitting elements 190R, 190G, and 190B from directly entering the light-receiving element 110 without passing through the object. Therefore, a sensor with low noise and high sensitivity can be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element of each color is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. This makes it possible to reduce sensor noise while suppressing the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the imaging quality.

[0331] 14, the partition wall 216 has an opening between the light receiving element 110 and the light emitting element 190R. A light shielding layer 219a is provided to fill the opening. The light shielding layer 219a is located between the light receiving element 110 and the light emitting element 190R. The light shielding layer 219a absorbs light emitted by the light emitting element 190R. This makes it possible to suppress stray light entering the light receiving element 110.

[0332] The spacer 219b is provided on the partition wall 216 and is located between the light emitting element 190G and the light emitting element 190B. The upper surface of the spacer 219b is preferably closer to the light shielding layer 158 than the upper surface of the light shielding layer 219a. For example, the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is preferably greater than the height (thickness) of the light shielding layer 219a. This makes it easier to fill the adhesive layer 142. As shown in FIG. 15A, in the portion where the spacer 219b and the light shielding layer 158 overlap, the light shielding layer 158 may be in contact with the common electrode 115 (or a protective layer).

[0333] A connection portion 244 is provided in an area of ​​the substrate 153 where the substrate 154 does not overlap. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 can be obtained by processing the same conductive film as the conductive layer 169. On the upper surface of the connection portion 244, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. This allows the connection portion 244 and the FPC 172 to be electrically connected via the connection layer 242.

[0334] The transistor 243, the transistor 248, the transistor 249, and the transistor 240 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer having a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0335] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through an opening provided in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0336] 14 and 15A, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, so that the structure shown in FIG. 14 and 15A can be manufactured. In FIG. 14 and 15A, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through the openings in the insulating layer 215. Furthermore, an insulating layer covering the transistor may be provided on the conductive layer 222a and the conductive layer 222b.

[0337] 15B illustrates an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.

[0338] As described above, in the display device of one embodiment of the present invention, the difference in distance between the two light-emitting elements and the light receiving element (or light receiving / emitting element) is different from the difference in distance between the two light-emitting elements and the opening of the light-shielding layer overlapping with the light receiving element (or light receiving / emitting element). With this configuration, the light receiving element or light receiving / emitting element can receive more light from one of the two light-emitting elements than from the other. Therefore, for example, in the display device of one embodiment of the present invention, more light from the light-emitting element used as a light source can be incident on the light receiving element or light receiving / emitting element.

[0339] [Pixel circuit example] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving element and a second pixel circuit having a light-emitting element in a display portion, the first pixel circuit and the second pixel circuit being arranged in a matrix.

[0340] FIG. 16A shows an example of a first pixel circuit having a light receiving element, and FIG. 16B shows an example of a second pixel circuit having a light emitting element.

[0341] 16A includes a light receiving element PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitor C1. Here, an example is shown in which a photodiode is used as the light receiving element PD.

[0342] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source and drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitance C1, one of the source and drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source and drain is electrically connected to the wiring V2. The transistor M3 has one of the source and drain electrically connected to the wiring V3, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M4. The transistor M4 has a gate electrically connected to the wiring SE, and the other of the source and drain is electrically connected to the wiring OUT1.

[0343] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light receiving element PD is driven with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by a signal supplied to the wiring RES, and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving element PD. The transistor M3 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE, and functions as a selection transistor for reading out the output according to the potential of the node in an external circuit connected to the wiring OUT1.

[0344] 16B includes a light-emitting element EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. Here, an example is shown in which a light-emitting diode is used as the light-emitting element EL. In particular, it is preferable to use an organic EL element as the light-emitting element EL.

[0345] The gate of the transistor M5 is electrically connected to the wiring VG, one of the source or drain is electrically connected to the wiring VS, and the other of the source or drain is electrically connected to one electrode of the capacitor C2 and the gate of the transistor M6. One of the source or drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting element EL and one of the source or drain of the transistor M7. The gate of the transistor M7 is electrically connected to the wiring MS, and the other of the source or drain is electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0346] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M5 is controlled by a signal supplied to the wiring VG, and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M6 also functions as a drive transistor for controlling the current flowing through the light-emitting element EL according to the potential supplied to the gate. When the transistor M5 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the light emission luminance of the light-emitting element EL can be controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS, and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2.

[0347] The wiring V1 to which the cathode of the light receiving element PD is electrically connected and the wiring V5 to which the cathode of the light emitting element EL is electrically connected can be in the same layer and have the same potential.

[0348] In the display device of one embodiment of the present invention, it is preferable that all of the transistors included in the pixel circuits PIX1 and PIX2 be transistors having a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer in which a channel is formed (hereinafter also referred to as an OS transistor). The off-state current of an OS transistor is extremely small and charge accumulated in a capacitor connected in series to the transistor can be held for a long period of time. Furthermore, the use of an OS transistor can reduce power consumption of the display device.

[0349] Alternatively, in the display device of one embodiment of the present invention, it is preferable to use a transistor having silicon in a semiconductor layer in which a channel is formed (hereinafter also referred to as a Si transistor) as all the transistors included in the pixel circuit PIX1 and the pixel circuit PIX2. Examples of silicon include single crystal silicon, polycrystalline silicon, amorphous silicon, and the like. In particular, it is preferable to use a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor). An LTPS transistor has high field-effect mobility and can operate at high speed.

[0350] Furthermore, by using Si transistors such as LTPS transistors, it becomes easier to fabricate various circuits consisting of CMOS circuits on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0351] Alternatively, in the display device of one embodiment of the present invention, two types of transistors are preferably used in the pixel circuit PIX1. Specifically, the pixel circuit PIX1 preferably includes an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer depending on the function required of the transistor, the quality of the pixel circuit PIX1 can be improved and the accuracy of sensing and imaging can be improved. In this case, the pixel circuit PIX2 may include either an OS transistor or an LTPS transistor or both.

[0352] Furthermore, even when two types of transistors (for example, OS transistors and LTPS transistors) are used in a pixel, the use of LTPS transistors makes it easy to fabricate various circuits consisting of CMOS circuits on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0353] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows the charge stored in the capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use OS transistors for the transistor M1, the transistor M2, and the transistor M5 connected in series with the capacitor C1 or the capacitor C2.

[0354] Moreover, it is preferable to use a Si transistor for the transistor M3, which allows the image data to be read out at high speed.

[0355] A display device having a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element in a display section can be driven in any of a mode for performing image display, a mode for performing imaging, and a mode for simultaneously performing image display and imaging. In the mode for performing image display, for example, a full-color image can be displayed using the light emitting element. In the mode for performing imaging, for example, an image for imaging (for example, monochromatic green or monochromatic blue) can be displayed using the light emitting element, and imaging can be performed using the light receiving element. In the mode for performing imaging, for example, fingerprint authentication can be performed. In the mode for performing image display and imaging simultaneously, for example, an image for imaging can be displayed using the light emitting element and imaging can be performed using the light receiving element in some pixels, and a full-color image can be displayed using the light emitting element in the remaining pixels.

[0356] 16A and 16B, the transistors are shown as n-channel transistors, but p-channel transistors can also be used. In addition, the transistors are not limited to single gate transistors and may further have a back gate.

[0357] It is preferable to provide one or more layers having transistors and / or capacitors at a position overlapping the light receiving element PD or the light emitting element EL, which can reduce the effective area occupied by each pixel circuit and realize a high-definition display unit.

[0358] This embodiment mode can be combined with other embodiment modes as appropriate.

[0359] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) which can be used for the OS transistor described in the above embodiment will be described.

[0360] The metal oxide preferably contains at least indium or zinc. In particular, it is preferable that the metal oxide contains indium and zinc. In addition to these, it is preferable that the metal oxide contains aluminum, gallium, yttrium, tin, etc. Furthermore, the metal oxide may contain one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0361] Moreover, the metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, an atomic layer deposition (ALD) method, or the like.

[0362] <Classification of crystal structures> Examples of the crystal structure of an oxide semiconductor include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystal.

[0363] The crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using an XRD spectrum obtained by a GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0364] For example, in the case of a quartz glass substrate, the peak shape of the XRD spectrum is almost symmetric. On the other hand, in the case of an IGZO film having a crystalline structure, the peak shape of the XRD spectrum is asymmetric. The asymmetric peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetric, the film or substrate cannot be said to be in an amorphous state.

[0365] The crystal structure of a film or substrate can be evaluated by a diffraction pattern (also called a nanobeam electron diffraction pattern) observed by nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state. In addition, a spot-like pattern is observed in the diffraction pattern of an IGZO film formed at room temperature, rather than a halo. For this reason, it is presumed that an IGZO film formed at room temperature is in an intermediate state that is neither crystalline nor amorphous, and therefore it cannot be concluded that it is in an amorphous state.

[0366] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0367] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0368] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystalline regions, each of which has a c-axis aligned in a specific direction. The specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. The crystalline region is a region having periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement. CAAC-OS has a region in which a plurality of crystalline regions are connected in the ab-plane direction, and the region may have distortion. The distortion refers to a portion in which the direction of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in the region in which the plurality of crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor having a c-axis aligned and no clear orientation in the ab-plane direction.

[0369] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be about several tens of nm.

[0370] In addition, in an In-M-Zn oxide (wherein element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter, In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter, (M, Zn) layer) are stacked. Note that indium and element M are mutually substituted. Thus, the (M, Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may contain Zn. The layered structure is observed as a lattice image in a high-resolution transmission electron microscope (TEM) image, for example.

[0371] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD device, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0372] For example, a plurality of bright points (spots) are observed in the electron diffraction pattern of the CAAC-OS film, and the two spots are observed at positions symmetrical to each other with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0373] When the crystal region is observed from the specific direction, the lattice arrangement in the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. The above distortion may have a pentagonal or heptagonal lattice arrangement. In addition, no clear grain boundary can be confirmed in the CAAC-OS even in the vicinity of the distortion. That is, it is found that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is considered to be because the CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction and the bond distance between atoms changes due to the substitution of metal atoms.

[0374] A crystal structure in which clear grain boundaries are observed is called a polycrystal. The grain boundaries are likely to become recombination centers and capture carriers, causing a decrease in the on-current of a transistor and a decrease in field effect mobility. Therefore, CAAC-OS in which clear grain boundaries are not observed is one of the crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor. In order to form a CAAC-OS, a structure containing Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the occurrence of grain boundaries more than In oxide.

[0375] The CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. In addition, since the crystallinity of an oxide semiconductor can be decreased by the inclusion of impurities or the generation of defects, the CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of an oxide semiconductor having the CAAC-OS are stable. Therefore, an oxide semiconductor having the CAAC-OS is resistant to heat and has high reliability. In addition, the CAAC-OS is stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS in an OS transistor can increase the degree of freedom in the manufacturing process.

[0376] [nc-OS] The nc-OS has periodic atomic arrangement in a minute region (for example, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has minute crystals. Note that the size of the minute crystals is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore the minute crystals are also called nanocrystals. In addition, the nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is seen in the entire film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structure analysis is performed on an nc-OS film using an XRD device, no peak indicating crystallinity is detected in out-of-plane XRD measurement using θ / 2θ scan. In addition, when an nc-OS film is subjected to electron diffraction (also called selected area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern like a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter (e.g., 1 nm to 30 nm) that is close to the size of a nanocrystal or smaller than the nanocrystal, an electron diffraction pattern in which multiple spots are observed within a ring-shaped region centered on the direct spot may be obtained.

[0377] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a void or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Moreover, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0378] <<Oxide semiconductor structure>> Next, the above-mentioned CAC-OS will be described in detail, with reference to its material composition.

[0379] [CAC-OS] CAC-OS is, for example, a material configuration in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide and the regions having the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0380] Furthermore, CAC-OS is a composite metal oxide in which the material is separated into a first region and a second region, forming a mosaic structure, and the first region is distributed throughout the film (hereinafter, also referred to as a cloud structure). In other words, CAC-OS is a composite metal oxide in which the first region and the second region are mixed together.

[0381] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are represented as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. Also, the second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. Also, the second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0382] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc., and the second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region mainly composed of In, and the second region can be rephrased as a region mainly composed of Ga.

[0383] In addition, there are cases where a clear boundary between the first region and the second region cannot be observed.

[0384] In addition, the CAC-OS in In-Ga-Zn oxide refers to a structure in which some regions mainly composed of Ga and some regions mainly composed of In are arranged randomly in a mosaic pattern in a material structure containing In, Ga, Zn, and O. Therefore, it is presumed that the CAC-OS has a structure in which metal elements are distributed non-uniformly.

[0385] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not heated. When CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film formation gas. The lower the flow rate ratio of oxygen gas to the total flow rate of film formation gas during film formation, the more preferable it is. For example, the flow rate ratio of oxygen gas to the total flow rate of film formation gas during film formation is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0386] Furthermore, for example, in the case of a CAC-OS of an In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) can confirm that the CAC-OS has a structure in which a region mainly composed of In (first region) and a region mainly composed of Ga (second region) are unevenly distributed and mixed.

[0387] Here, the first region is a region with higher conductivity than the second region. In other words, the first region exhibits conductivity as a metal oxide when carriers flow through the first region. Therefore, the first region is distributed in a cloud-like shape in the metal oxide, thereby realizing a high field-effect mobility (μ).

[0388] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, so that leakage current can be suppressed.

[0389] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act in a complementary manner, giving the CAC-OS a switching function (On / Off function). In other words, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, it is possible to maximize both functions. Therefore, by using CAC-OS in a transistor, it is possible to achieve a high on-current (I on ), high field effect mobility (μ), and good switching operation can be achieved.

[0390] In addition, a transistor using CAC-OS has high reliability, making it ideal for various semiconductor devices such as display devices.

[0391] Oxide semiconductors have a variety of structures and have different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0392] <Transistor Having Oxide Semiconductor> Next, the case where the oxide semiconductor is used for a transistor will be described.

[0393] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0394] For the transistor, an oxide semiconductor having a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than or equal to 1×10 15 cm -3 Less than 1×10, more preferably 13 cm -3 Less than or equal to 1×10 11 cm -3 Less than 1×10, more preferably 10 cm -3 Less than 1 x 10 -9 cm -3 The above is the case. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, an oxide semiconductor having a low impurity concentration and a low density of defect states is referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may be referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor.

[0395] In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore the density of trap states might also be low.

[0396] In addition, charges trapped in the trap states of an oxide semiconductor take a long time to disappear and may behave as if they are fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0397] Therefore, in order to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in a nearby film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0398] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0399] When an oxide semiconductor contains silicon or carbon, which is one of the group 14 elements, defect levels are formed in the oxide semiconductor. For this reason, the concentrations of silicon or carbon in the oxide semiconductor and those near the interface with the oxide semiconductor (concentrations obtained by secondary ion mass spectrometry (SIMS)) are calculated as 2×10 18 atoms / cm 3 Less than or equal to 2×10 17 atoms / cm 3 The following applies.

[0400] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels are formed and carriers are generated in some cases. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal is likely to have normally-on characteristics. For this reason, when the concentration of an alkali metal or an alkaline earth metal in an oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 Less than or equal to 2×10 16 atoms / cm 3 To the following:

[0401] Furthermore, when nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor is likely to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in an oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than 5 x 10 18 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3Less than 5×10, more preferably 17 atoms / cm 3 To the following:

[0402] Furthermore, hydrogen contained in an oxide semiconductor reacts with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. When hydrogen enters the oxygen vacancy, electrons serving as carriers may be generated. In addition, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons serving as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. For this reason, it is preferable to reduce hydrogen in the oxide semiconductor as much as possible. Specifically, when the hydrogen concentration in an oxide semiconductor measured by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Make it less than.

[0403] When an oxide semiconductor in which impurities are sufficiently reduced is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0404] This embodiment mode can be combined with other embodiment modes as appropriate.

[0405] (Embodiment 4) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0406] An electronic device according to one embodiment of the present invention can capture an image and detect a touch operation with a display portion, thereby improving the functionality, convenience, and the like of the electronic device.

[0407] Examples of electronic devices according to one embodiment of the present invention include electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and audio playback devices.

[0408] An electronic device according to one embodiment of the present invention may have a sensor (including a function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0409] The electronic device of one embodiment of the present invention can have various functions, such as a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, a function of reading out a program or data recorded in a recording medium, etc.

[0410] The electronic device 6500 shown in FIG. 17A is a portable information terminal that can be used as a smartphone.

[0411] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0412] The display device described in Embodiment 2 can be applied to the display portion 6502.

[0413] FIG. 17B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0414] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0415] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0416] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and the folded back part is connected to an FPC 6515. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0417] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while suppressing the thickness of the electronic device. In addition, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0418] By using the display device described in Embodiment 2 for the display panel 6511, an image can be captured by the display portion 6502. For example, a fingerprint can be captured by the display panel 6511 for fingerprint authentication.

[0419] The display portion 6502 can have a touch panel function by further including a touch sensor panel 6513. The touch sensor panel 6513 can be of any of various types, such as a capacitive type, a resistive film type, a surface acoustic wave type, an infrared type, an optical type, or a pressure-sensitive type. Alternatively, the display panel 6511 may function as a touch sensor, in which case the touch sensor panel 6513 is not necessarily provided.

[0420] 18A shows an example of a television device. In a television device 7100, a display unit 7000 is incorporated in a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0421] The display device described in Embodiment 2 can be applied to the display portion 7000.

[0422] 18A can be operated using an operation switch provided on the housing 7101 or a separate remote control 7111. Alternatively, a touch sensor may be provided on the display unit 7000, and the television unit 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control 7111 may have a display unit that displays information output from the remote control 7111. Using an operation key or a touch panel provided on the remote control 7111, it is possible to operate the channel and the volume, and to operate the video displayed on the display unit 7000.

[0423] The television device 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. By connecting to a wired or wireless communication network via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can be performed.

[0424] 18B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

[0425] The display device described in Embodiment 2 can be applied to the display portion 7000.

[0426] 18C and 18D show an example of digital signage.

[0427] 18C includes a housing 7301, a display unit 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0428] 18D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pole 7401.

[0429] 18C and 18D, the display device described in Embodiment 2 can be applied to the display portion 7000.

[0430] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it catches people's attention, which can increase the advertising effect of, for example, advertisements.

[0431] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used for providing information such as route information or traffic information, usability can be improved by intuitive operation.

[0432] 18C and 18D, it is preferable that the digital signage 7300 or the digital signage 7400 can be linked to an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user via wireless communication. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Furthermore, the display on the display unit 7000 can be switched by operating the information terminal 7311 or the information terminal 7411.

[0433] In addition, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). This allows an unspecified number of users to participate in and enjoy the game at the same time.

[0434] The electronic device shown in Figures 19A to 19F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0435] The electronic devices shown in Figs. 19A to 19F have various functions. For example, they may have a function of displaying various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, etc. The functions of the electronic devices are not limited to these, and they may have various functions. The electronic devices may have multiple display units. In addition, the electronic devices may have a function of providing a camera or the like in the electronic device, taking still images or videos, and storing them on a recording medium (external or built-in to the camera), a function of displaying the taken images on the display unit, etc.

[0436] The electronic devices shown in FIGS. 19A to 19F will be described in detail below.

[0437] FIG. 19A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. The mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on a plurality of surfaces. FIG. 19A shows an example in which three icons 9050 are displayed. Information 9051 shown in a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming e-mail, SNS, and phone calls, titles of e-mail and SNS, sender names, date and time, time, remaining battery level, and antenna reception strength. Alternatively, the icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0438] 19B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether or not to answer a call.

[0439] FIG. 19C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch. The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0440] 19D to 19F are perspective views showing a foldable mobile information terminal 9201. FIG. 19D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 19F is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 19E is a perspective view of a state in the middle of changing from one of FIG. 19D and FIG. 19F to the other. The mobile information terminal 9201 has excellent portability in a folded state, and has excellent viewability of the display due to a seamless wide display area in an unfolded state. The display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0441] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0442] C1: capacitance, C2: capacitance, L1: shortest distance, L2: shortest distance, M1: transistor, M2: transistor, M3: transistor, M4: transistor, M5: transistor, M6: transistor, M7: transistor, OUT1: wiring, OUT2: wiring, PIX1: pixel circuit, PIX2: pixel circuit, V1: wiring, V2: wiring, V3: wiring, V4: wiring, V5: wiring, 10: device, 11: control unit, 12: display unit, 13: memory unit, 20: display unit, 21: detection unit, 22: finger, 22A: contact area, 23: captured image, 24: contact area, 25: captured image, 26: captured image image, 27: captured image, 28: captured image, 29: captured image, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 110: light receiving element, 112: common layer, 114: common layer, 115: common electrode, 116: protective layer, 121: light emission, 121B: light, 121G: light, 121R: light, 122: light, 123: light, 123a: stray light, 123b: stray light, 124: reflected light, 131: transistor, 132: transistor, 142: adhesive layer, 151: substrate, 152: substrate, 153: substrate, 154: substrate, 155: adhesive layer , 156: adhesive layer, 157: insulating layer, 158: light-shielding layer, 159: resin layer, 159p: opening, 162: display section, 164: circuit, 165: wiring, 166: conductive layer, 167: conductive layer, 169: conductive layer, 172: FPC, 173: IC, 182: buffer layer, 183: active layer, 184: buffer layer, 190: light-emitting element, 190B: light-emitting element, 190G: light-emitting element, 190R·PD: light-receiving element, 190R: light-emitting element, 191: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting element Optical layer, 193G: light-emitting layer, 193R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer, 194R: buffer layer, 200A: display device, 200B: display device, 201: substrate, 202: finger, 203: layer having light-receiving element, 204: layer having light-receiving / light-emitting element, 205: functional layer, 207: layer having light-emitting element, 208: stylus, 209: substrate, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 214a: insulating layer, 214b: insulating layer, 215: insulating layer, 216: partition wall, 219a: light-shielding layer, 219b: spacer,221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: channel formation region, 231n: low resistance region, 240: transistor, 241: transistor, 242: connection layer, 243: transistor, 244: connection portion, 245: transistor, 246: transistor, 247: transistor, 248: transistor, 249: transistor, 252: transistor, 261: contact portion, 262: fingerprint, 263: imaging range, 266: trajectory, 270B: light emitting element , 270G: light emitting element, 270PD: light receiving element, 270R·PD: light receiving / emitting element, 270R: light emitting element, 271: pixel electrode, 273: active layer, 275: common electrode, 280A: display device, 280B: display device, 280C: display device, 281: hole injection layer, 282: hole transport layer, 283: light emitting layer, 283B: light emitting layer, 283G: light emitting layer, 283R: light emitting layer, 284: electron transport layer, 285: electron injection layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506 : Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control device, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 9000: housing, 9001: display unit, 9003: speaker, 9005: operation key, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9101: portable information terminal, 9102: portable information terminal, 9200: portable information terminal, 9201: portable information terminal,

Claims

1. An electronic device having a control unit and a display unit, The display unit has a function of displaying an image on a screen, and also has a detection unit; The detection unit has a function of detecting a touch operation and a function of capturing an image of a detection target touching the screen at least twice; the control unit has a function of calculating a difference between an area of ​​the detectable object in a first image capture and an area of ​​the detectable object in a second image capture, and executing different processes depending on whether the difference is larger or smaller than a reference value; the display unit has a function of capturing an image using a plurality of pixels and an entire display area; The pixel includes a light emitting element and a light receiving element, The light emitting element and the light receiving element are provided on the same surface, the light-emitting element has a laminated structure in which a first electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a common electrode are laminated; the light receiving element has a laminated structure in which a second electrode, the hole injection layer, the hole transport layer, an active layer, the electron transport layer, the electron injection layer, and the common electrode are laminated, the light-emitting layer and the active layer each contain a different organic compound; The first electrode and the second electrode are provided on the same plane and spaced apart from each other, the hole injection layer is provided to cover the first electrode and the second electrode, The electron transport layer is provided to cover the light emitting layer and the active layer. electronic equipment.

2. An electronic device having a control unit, a display unit, and a storage unit, The display unit has a function of displaying an image on a screen, and also has a detection unit; The detection unit has a function of detecting a touch operation and a function of capturing an image of a detection target touching the screen, The control unit has a function of acquiring information on a contact area of ​​the detection object from data captured by the detection unit, The storage unit has a function of storing information of a reference contact area registered in advance, the control unit has a function of executing different processes depending on whether the contact area of ​​the detection object is larger or smaller than the reference contact area, the display unit has a function of capturing an image using a plurality of pixels and an entire display area; The pixel includes a light emitting element and a light receiving element, The light emitting element and the light receiving element are provided on the same surface, the light-emitting element has a laminated structure in which a first electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a common electrode are laminated; the light receiving element has a laminated structure in which a second electrode, the hole injection layer, the hole transport layer, an active layer, the electron transport layer, the electron injection layer, and the common electrode are laminated, the light-emitting layer and the active layer each contain a different organic compound; The first electrode and the second electrode are provided on the same plane and spaced apart from each other, the hole injection layer is provided to cover the first electrode and the second electrode, The electron transport layer is provided to cover the light emitting layer and the active layer. electronic equipment.

3. An electronic device having a control unit, a display unit, and a storage unit, The display unit has a function of displaying an image on a screen, and also has a detection unit; the detection unit has a function of detecting a touch operation on the screen and a function of capturing an image of a finger touching the screen; the control unit has a function of acquiring information on a contact area of ​​the finger and fingerprint information of the finger from the data captured by the detection unit, The storage unit has a function of storing fingerprint information for matching and reference contact area information, each of which is registered in advance; The control unit is A function of comparing the fingerprint information of the finger with the fingerprint information for comparison; a function of executing different processes depending on whether the contact area of ​​the finger is larger or smaller than the reference contact area when the fingerprint information of the finger matches the fingerprint information for collation, the display unit has a function of capturing an image using a plurality of pixels and an entire display area; The pixel includes a light emitting element and a light receiving element, The light emitting element and the light receiving element are provided on the same surface, the light-emitting element has a laminated structure in which a first electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a common electrode are laminated; the light receiving element has a laminated structure in which a second electrode, the hole injection layer, the hole transport layer, an active layer, the electron transport layer, the electron injection layer, and the common electrode are laminated, the light-emitting layer and the active layer each contain a different organic compound; The first electrode and the second electrode are provided on the same plane and spaced apart from each other, the hole injection layer is provided to cover the first electrode and the second electrode, The electron transport layer is provided to cover the light emitting layer and the active layer. electronic equipment.

4. In any one of claims 1 to 3, The light-emitting element has a function of emitting visible light, The light receiving element has a function of receiving the visible light emitted by the light emitting element. electronic equipment.

5. In any one of claims 1 to 3, The light-emitting element has a function of emitting infrared light, The light receiving element has a function of receiving the infrared light emitted by the light emitting element. electronic equipment.

Images