White light emitting devices and LED lighting devices

Abstract

To provide a white light-emitting device for human-oriented lighting and an LED lighting device using the white light-emitting device.SOLUTION: A white light-emitting device according the present invention comprises blue light-emitting diodes which emit blue light with a peak wavelength range of 440 nm to 455 nm, a first wavelength conversion substance which is excited by blue light to emit first light with a peak wavelength range of 535 nm to 550 nm and a half width equal to or less than 60 nm, and a second wavelength conversion substance which is excited by blue light to emit a second light with a peak wavelength range of 620 nm to 660nm, a melanopic photopic ratio of the white light emitted from the white light-emitting device being equal to or less than 0.65, and a color rendering index (CRI) thereof being equal to or greater than 80.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a white light emitting device and an LED lighting device including the same. [Background technology]

[0002] In general, wavelength conversion materials such as phosphors are used as materials for converting light of a specific wavelength emitted from various light sources into light of a desired wavelength. In particular, such wavelength conversion materials are widely used as white light emitting devices for various lighting devices as well as displays such as LCD backlights in combination with semiconductor light emitting diodes having excellent light efficiency.

[0003] Generally, a white light emitting device is realized by applying multiple wavelength conversion materials (e.g., green and red, or blue, yellow, and red) such as phosphors to an ultraviolet or blue LED chip. Recently, in the field of white lighting, there is a demand for a human-centric LED lighting device and a white light emitting device that can be used therefor. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special Publication No. 2018-511386 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made in view of the above-mentioned conventional techniques, and an object of the present invention is to provide a white light-emitting device for human-centered illumination and an LED lighting device including the same. [Means for solving the problem]

[0006] In order to achieve the above object, one embodiment of the present invention provides a white light emitting device comprising: a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm; a first wavelength conversion material that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less; and a second wavelength conversion material that is excited by the blue light to emit a second light having a peak wavelength in the range of 620 nm to 660 nm, wherein the white light emitted from the white light emitting device has a melanopic photopic ratio (M / P ratio) of 0.65 or less and a color rendering index (CRI) of the white light is 80 or more.

[0007] In order to achieve the above object, according to another aspect of the present invention, a white light emitting device includes a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm, and a wavelength conversion unit that converts a part of the blue light and combines the converted light with another unconverted part to provide white light, wherein the wavelength conversion unit includes a first wavelength conversion material that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm, and a second wavelength conversion material that is excited by the blue light to emit a second light having a peak wavelength in the range of 620 nm to 660 nm, wherein an intensity at 480 nm in the spectrum of the first light is 2% or less of an intensity of the peak wavelength of the first light, a melanopic-photopic ratio of the white light is 0.65 or less, and a color rendering index (CRI) of the white light is 80 or more.

[0008] In order to achieve the above object, a white light emitting device according to still another aspect of the present invention comprises a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm, a first wavelength conversion substance that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less, and a second wavelength conversion substance that is excited by the blue light to emit a second light having a peak wavelength in the range of 620 nm to 660 nm, wherein the melanopic-photopic ratio of the white light emitted from the white light emitting device is 0.65 or less, and in the spectrum of the white light, an integrated light amount from 440 nm to 460 nm is in the range of 50% to 65% of an integrated light amount from 380 nm to 500 nm, and an integrated light amount from 480 nm to 500 nm is in the range of 26% or less of an integrated light amount from 540 nm to 560 nm.

[0009] In order to achieve the above object, an LED lighting device according to one embodiment of the present invention includes a first LED light source configured to emit a first white light having a first melanopic-photopic ratio, a second LED light source configured to emit a second white light having a second melanopic-photopic ratio higher than the first melanopic-photopic ratio, and a drive controller configured to control currents applied to the first LED light source and the second LED light source, respectively. The first LED light source includes a blue light emitting diode emitting blue light having a peak wavelength in the range of 440 nm to 455 nm, a first wavelength conversion material excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less, and a second wavelength conversion material excited by the blue light to emit a second light having a peak wavelength in the range of 620 nm to 660 nm. Effect of the Invention

[0010] According to the present invention, it is possible to provide a human-centered white light-emitting device and LED lighting device that adjusts the spectrum in the 465 nm to 495 nm range to regulate the secretion of melatonin hormone, which is involved in human biorhythms, in order to optimize circadian rhythms.

[0011] The various and beneficial advantages and effects of the present invention are not limited to the above, but can be more easily understood in the course of describing specific embodiments of the present invention. [Brief description of the drawings]

[0012] [Figure 1] 1 is a schematic cross-sectional view showing an example of a white light emitting device according to an embodiment of the present invention. [Diagram 2] 4 is a graph showing an emission spectrum of white light emitted from a white light emitting device according to an embodiment of the present invention. [Diagram 3] 4 is a graph showing an example of an emission spectrum of a first wavelength conversion material that can be employed in a white light emitting device according to an embodiment of the present invention. [Figure 4] 4 is a graph showing an emission spectrum of a second wavelength conversion material that can be employed in a white light emitting device according to an embodiment of the present invention. [Diagram 5] 4 is a schematic cross-sectional view showing another example of a white light emitting device according to an embodiment of the present invention. [Figure 6] 1 is a schematic cross-sectional view showing a light-emitting diode chip employed in a white light-emitting device according to an embodiment of the present invention. [Figure 7] 1 is a graph illustrating a melanopic-photopic ratio according to a color temperature of a white light emitting device according to various embodiments of the present invention. [Figure 8] 4 is a graph showing the emission spectrum of white light from white light emitting devices according to various embodiments of the present invention. [Figure 9] 4 is a graph illustrating first and second spectral conditions of white light from white light emitting devices according to various embodiments of the present invention. [Figure 10] 1 is a block diagram of an LED lighting device according to one embodiment of the present invention. [Figure 11] 11 is a cross-sectional view showing a second white light emitting device that can be used as a second light source of the LED lighting device of FIG. [Figure 12]4 is a graph showing emission spectra of first and second white light respectively emitted from first and second white light emitting devices of an LED lighting device according to an embodiment of the present invention. [Figure 13] 4 is a graph illustrating selective control of first and second white lights of an LED lighting device according to an embodiment of the present invention. [Figure 14] 1 is a perspective view of an LED light-emitting module according to one embodiment of the present invention; [Figure 15] 1 is a side cross-sectional view of an LED light-emitting module according to one embodiment of the present invention; [Figure 16] 15 is a cross-sectional view of the light-emitting module of FIG. 14 taken along II'. [Figure 17] 1 is a perspective view showing a flat panel lighting device according to an embodiment of the present invention; [Figure 18] 1 is an exploded perspective view showing a bulb-type lighting device according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific examples of the embodiments of the present invention will be described in detail with reference to the drawings.

[0014] FIG. 1 is a schematic cross-sectional view showing an example of a white light emitting device according to one embodiment of the present invention.

[0015] 1, a white light emitting device 100 according to the present embodiment includes a package substrate 101, a blue light emitting diode (LED) 130 disposed on the package substrate 101, and a wavelength conversion unit 150. The white light emitting device 100 further includes a pair of lead frames (111, 112) electrically connected to the blue LED 130, a cup-shaped sidewall reflector 120, and a conductive wire W connecting the blue LED 130 and the lead frames (111, 112).

[0016] For example, the package substrate 101 is made of an opaque resin or a resin with high reflectivity, and includes a polymer resin containing highly reflective powder, which is easy to inject. The package substrate 101 is also made of ceramic, which facilitates heat dissipation. In one embodiment, the package substrate 101 is a printed circuit board on which a wiring pattern is formed to replace the lead frames (111, 112).

[0017] The sidewall reflector 120 is disposed on the package substrate 101 and the lead frame (111, 112) to form a cavity for accommodating the blue LED 130. The sidewall reflector 120 has a cup shape to improve light reflection efficiency, but is not limited thereto. In one embodiment, the sidewall reflector 120 is integrally formed with the package substrate 101. For example, the sidewall reflector 120 and the package substrate 101 are formed of the same material (e.g., resin containing highly reflective white powder) by the same process (e.g., injection molding).

[0018] The blue LED 130 includes an epitaxial semiconductor layer configured to emit blue light. The blue LED 130 is configured to emit blue light having a peak wavelength in the range of 440 nm to 455 nm.

[0019] The wavelength conversion unit 150 is disposed on the light path of the blue LED 130 and includes a plurality of wavelength conversion materials (154, 156) dispersed in a transparent resin 152. The plurality of wavelength conversion materials (154, 156) are selected so as to combine light of other wavelengths excited and converted by the blue light generated from the blue LED 130 with the unconverted blue light portion to finally emit a desired white light. For example, the transparent resin 152 is made of epoxy, silicone, modified silicone, urethane resin, oxetane resin, acrylic, polycarbonate, polyimide, and combinations thereof. In one embodiment, the wavelength conversion materials (154, 156) are provided in a form directly applied to the surface of the blue LED 130 instead of being dispersed in the transparent resin 152 (see FIG. 16).

[0020] 2 is a graph showing an emission spectrum of white light emitted from a white light emitting device according to an embodiment of the present invention. The white light emitting device 100 according to the present embodiment provides human-centered illumination (e.g., night illumination) by lowering intensity in a melanopic sensitivity bandwith in order to optimize circadian rhythm. As shown in FIG. 2, the white light emitted from the white light emitting device 100 has spectrum A in which the melanopic sensitivity band MS is adjusted. In the white light spectrum A, the melanopic sensitivity band MS, particularly the 465 nm to 495 nm band, is lowered to adjust the melanopic photopic ratio of the white light to a low value of 0.37.

[0021] In this way, by adjusting the melanopic sensitive band MS, particularly the band including 465 nm to 495 nm, in the white light spectrum, it is possible to adjust the secretion of melatonin hormone related to human biorhythms, and such adjustment can provide white light that can optimize circadian rhythms. In contrast, "C" indicates another white light spectrum. The spectrum represented by "C" has the same color temperature as the white light of the spectrum represented by "A" (e.g., 2700K), but the melanopic sensitive band MS has a relatively higher light amount than the same band of "A". That is, the white light spectrum represented by "C" appears to have a relatively higher M / P ratio of 0.46 than the spectrum represented by "A".

[0022] The white light according to this embodiment has a relatively low M / P ratio, for example, an M / P ratio of 0.65 or less.

[0023] Generally, the melanopic-photopic ratio tends to increase as the color temperature increases. The white light according to the present embodiment is realized to have a relatively low M / P ratio in the range of 1800K to 4000K, for example, an M / P ratio in the range of 0.1 to 0.65 in the range of 1800K to 4000K.

[0024] In one embodiment, despite such selective adjustment of a specific wavelength band ("MS" in FIG. 2), the white light of the white light-emitting device 100 has a high color rendering index (CRI) of 80 or more. In one embodiment, the color rendering index of the white light of the white light-emitting device 100 is 80 or more.

[0025] In order to realize white light under such conditions, the wavelength conversion material (154, 156) employed in this embodiment includes a first wavelength conversion material 154 that emits a first light having a peak wavelength in the range of 535 nm to 550 nm, and a second wavelength conversion material 156 that emits a second light having a peak wavelength in the range of 620 nm to 660 nm.

[0026] The first wavelength-converting material 154 is configured to emit green light having a slightly higher peak wavelength than a typical green wavelength-converting material, so as to lower the 465 nm to 495 nm region in the final white light spectrum.

[0027] FIG. 3 is a graph showing an example of an emission spectrum of a first wavelength conversion material 154 that can be used in a white light emitting device according to an embodiment of the present invention. 6-Z Al Z O Z N 8-Z :EU 2+ Z (0.01≦Z≦5.99) (hereinafter also referred to as "β-SiAlON" phosphor) shows a spectrum G1 emitted by blue excitation light with a peak wavelength of 448 nm. Referring to Fig. 3, the β-SiAlON phosphor has a peak wavelength (e.g., about 540 nm) relatively higher than the peak wavelength (e.g., about 532 nm) of other green phosphors (e.g., silicate phosphors). In addition, the spectrum G1 by the β-SiAlON phosphor has a half-width (e.g., about 56 nm) relatively narrower than the half-width (e.g., about 115 nm) of the spectrum G2 by other green phosphors (e.g., silicate phosphors).

[0028] Thus, in this embodiment, the first wavelength conversion material 154 having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less is used so as to be able to sufficiently lower the 465 nm to 495 nm region in the white light spectrum.

[0029] On the other hand, the spectrum G1 of the β-SiAlON phosphor has a relatively very low intensity (e.g., 0.37%) at 480 nm. For example, the first wavelength conversion material 154 has an emission spectrum in which the intensity at 480 nm is 2% or less, and even 1% or less, lower than the peak intensity (e.g., intensity at about 532 nm). Thus, in this specification, the intensity at 480 nm is defined by the single spectrum (G1 in FIG. 3) of the light G1 emitted from the first wavelength conversion material 154, not the spectrum of the final white light.

[0030] In this embodiment, the first wavelength conversion material that can be used is not only β-SiAlON phosphor, but also ceramic phosphors and / or quantum dots that satisfy the above-mentioned conditions of peak wavelength and half width (and / or relative peak of 480 nm). For example, quantum dots include InP / ZnS, InP / ZnSe, CdSe / CdS, CdSe / ZnS, PbS / ZnS, InP / ZnSe / ZnS, InP / GaP / ZnS, and combinations thereof.

[0031] The second wavelength conversion material 156 is selected so that the final white light, together with the first wavelength conversion material 154, is provided with a sufficient color rendering index (e.g., 80 or higher) in terms of the melanopic-photopic ratio (M / P ratio).

[0032] 4 is a graph showing the emission spectrum of a second wavelength conversion material that can be used in a white light emitting device according to an embodiment of the present invention. Referring to FIG. 4, the emission light spectra R0, Ra, Rb, Rc, and Rd of five samples (red phosphors) are illustrated.

[0033] As shown in Table 1 below, the spectrum R0 of the first sample has a peak wavelength of 612 nm and a half width of 68 nm, the spectrum Ra of the second sample has a peak wavelength of 620 nm and a half width of 71 nm, the spectrum Rb of the third sample has a peak wavelength of 628 nm and a half width of 93 nm, the spectrum Rc of the fourth sample has a peak wavelength of 639 nm and a half width of 86 nm, and the spectrum Rd of the fifth sample has a peak wavelength of 655 nm and a half width of 83 nm.

[0034] [Table 1]

[0035] As the red phosphor, the first to fifth samples (R0, Ra, Rb, Rc, Rd) shown in Table 2 below were used alone or in combination with the β-SiAlON phosphor described with reference to FIG. 3 as the green phosphor. These were combined with a blue LED having a peak wavelength of 448 nm as an excitation light source to manufacture white light emitting devices, and the color rendering index of the white light emitted from each white light emitting device was measured.

[0036] [Table 2]

[0037] As shown in Table 2, it is difficult to obtain a sufficient color rendering index (e.g., 80 or more) using the red phosphor of the first sample R0 alone, but when using the red phosphors of the second sample Ra and the third sample Rb in combination with them, a white light emitting device can be configured to emit white light with a high color rendering index of 80 or more (e.g., 86 or 87).

[0038] In this way, taking into consideration the color rendering index, the second wavelength conversion material 156 that can be employed in this embodiment emits light with a peak wavelength in the range of 620 nm to 660 nm. In one embodiment, the second wavelength conversion material 156 has a half-width of 70 nm or more. In a specific embodiment, the second wavelength conversion material 156 may be a combination of two or more red phosphors having different wavelengths.

[0039] A red phosphor or quantum dots that meets such wavelength conditions is used as the second wavelength conversion material 156. For example, the second wavelength conversion material 156 is (Sr,Ca)AlSiN 3 :Eu, CaAlSiN 3 :Eu, K x SiF y :Mn 4+ (2≦x≦3, 4≦y≦7) (hereinafter also referred to as "KSF phosphors") and combinations thereof.

[0040] In addition, a desired color temperature can be achieved by adjusting the compounding ratio of the first and second wavelength converting materials (154, 156). For example, the color temperature becomes lower (warm white) as the amount of the second wavelength converting material 156 increases, and the color temperature becomes higher (cool white) as the amount of the second wavelength converting material 156 decreases.

[0041] In this way, according to this embodiment, it is possible to provide a human-centered white light-emitting device for lighting that satisfies the color rendering index while regulating the secretion of melatonin hormone, which is involved in human biorhythms, by reducing the intensity in the melanopic sensitive band (e.g., 465 nm to 495 nm).

[0042] FIG. 5 is a schematic cross-sectional view showing another example of a white light emitting device according to an embodiment of the present invention.

[0043] 5, the white light emitting device 100A according to the present embodiment may be understood to be similar to the white light emitting device 100 shown in FIG 1, except that at least a part of the wavelength conversion material is provided in the form of a film. Furthermore, unless otherwise stated, the components of the present embodiment may be understood with reference to the description of the same or similar components of the white light emitting device 100 shown in FIG 1.

[0044] The wavelength converting section 150A employed in this embodiment is realized by a combination of an in-encapsulation type and a film type. As shown in Fig. 5, the in-encapsulation type has a structure in which a second wavelength converting material 156 is mixed into a transparent resin 152, similar to the wavelength converting section 150 of the above embodiment.

[0045] Also, the film type is manufactured with a wavelength conversion film 154' containing a first wavelength converting material 154b' and laminated on the emission surface. For example, the wavelength conversion film 154' is a structure in which a transparent resin 154a' is mixed as a binder, or is a ceramic film made of phosphor itself. In addition, the white light emitting device according to the present invention can have various structures. In one embodiment, such a wavelength conversion film is directly applied to the surface of the LED chip (see FIG. 16).

[0046] 6(a) and 6(b) are schematic cross-sectional views showing a light-emitting diode chip employed in a white light-emitting device according to one embodiment of the present invention.

[0047] 6(a), the LED chip 30A employed in this embodiment includes a substrate 31 and a semiconductor laminate S disposed on the substrate 31. The semiconductor laminate S includes a first conductive type semiconductor layer 34, an active layer 35, and a second conductive type semiconductor layer 36, which are sequentially disposed on the substrate 31. A buffer layer 32 is further disposed between the substrate 31 and the first conductive type semiconductor layer 34.

[0048] The substrate 31 is an insulating substrate such as sapphire. However, the substrate 31 is not limited thereto, and may be a conductive or semiconducting substrate in addition to insulating substrates. For example, the substrate 31 may be made of SiC, Si, MgAl, or the like in addition to sapphire. 2 O 4 , MgO, LiAlO 2 , LiGaO 2 , GaN. An unevenness P is formed on the upper surface of the substrate 31. The unevenness P can improve the quality of the grown single crystal while improving the light extraction efficiency.

[0049] The buffer layer 32 is undoped In x Al y Ga 1-x-y N, where 0≦x≦1, 0≦y≦1. For example, the buffer layer 32 is GaN, AlN, AlGaN, InGaN. Multiple layers can be combined or graded in composition if desired.

[0050] The first conductive type semiconductor layer 34 is an n-type In x Al y Ga 1-x-y N (0≦x<1, 0≦y<1, 0≦x+y<1), and the n-type impurity is Si. For example, the first conductive type semiconductor layer 34 includes n-type GaN. The second conductive type semiconductor layer 36 includes p-type In x Al y Ga 1-x-y N (0≦x<1, 0≦y<1, 0≦x+y<1), and the p-type impurity is Mg. For example, the second conductive type semiconductor layer 36 is realized as a single layer structure, but may have a multilayer structure having different compositions as in this embodiment.

[0051] The active layer 35 has a multiple quantum well (MQW) structure in which quantum well layers and quantum barrier layers are alternately stacked. For example, the quantum well layers and the quantum barrier layers are In x Al y Ga 1-x-y N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1. In a particular example, the quantum well layer is In x Ga 1-xN satisfies 0 < x ≦ 1, and the quantum barrier layer is made of GaN or AlGaN. The thicknesses of the quantum well layer and the quantum barrier layer are each in the range of 1 nm to 50 nm. The active layer 35 is not limited to a multiple quantum well structure and may be a single quantum well structure.

[0052] The first and second electrodes (39a, 39b) are respectively disposed on the mesa-etched region of the first conductive type semiconductor layer 34 and the second conductive type semiconductor layer 36 so as to be located on the same surface (the first surface). The first electrode 39a includes, but is not limited to, substances such as Ag, Ni, Al, Cr, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, etc., and is adopted in a single layer or a structure of two or more layers. In one embodiment, the second electrode 39b is a transparent electrode such as a transparent conductive oxide or a transparent conductive nitride, or includes graphene. The second electrode 39b includes at least one of Al, Au, Cr, Ni, Ti, and Sn.

[0053] Referring to FIG. 6(b), the LED chip 30B according to the present embodiment may be understood to be similar to the LED chip 30A shown in FIG. 5 except for the electrode structure and related structures. For the description of the components of the present embodiment, refer to the description of the same or similar components of the LED chip 30A shown in FIG. 6(a) unless otherwise stated.

[0054] The LED chip 30B includes first and second electrodes (42, 44) connected to the first and second conductive semiconductor layers (34, 36), respectively. The first electrode 42 includes a connecting electrode portion 42a connected to the first conductive semiconductor layer 34 through the second conductive semiconductor layer 36 and the active layer 35, and a first electrode pad 42b connected to the connecting electrode portion 42a. The connecting electrode portion 42a has a structure similar to a conductive via. The connecting electrode portion 42a is surrounded by an insulating portion 41 and is electrically isolated from the active layer 35 and the second conductive semiconductor layer 36. The connecting electrode portion 42a is disposed in an area where the semiconductor laminate S is etched. The number, shape, pitch, or contact area with the first conductive semiconductor layer 34 of the connecting electrode portion 42a is appropriately designed so as to reduce contact resistance. The connecting electrode portions 42a are arranged in rows and columns on the semiconductor laminate S to improve the flow of current. The second electrode 44 includes an ohmic contact layer 44a on the second conductive type semiconductor layer 36 and a second electrode pad 44b.

[0055] The connecting electrode 42a and the ohmic contact layer 44a have ohmic characteristics with the first and second conductive semiconductor layers 34 and 36, respectively, and the conductive material includes a single layer or a multi-layer structure. The conductive material is formed by a process such as deposition or sputtering of one or more of a metal such as Ag, Al, Ni, or Cr, and a transparent conductive oxide (TCO) such as ITO.

[0056] The first and second electrode pads (42b, 44b) are connected to the connecting electrode portion 42a and the ohmic contact layer 44a, respectively, and function as external terminals of the LED chip 30B. For example, the first and second electrode pads (42b, 44b) are made of Au, Ag, Al, Ti, W, Cu, Sn, Ni, Pt, Cr, NiSn, TiW, AuSn, or a eutectic metal thereof.

[0057] The first and second electrodes (42, 44) are arranged in the same direction and mounted on a lead frame or the like in a so-called flip chip form. Meanwhile, the two electrodes (42, 44) are electrically isolated from each other by an insulating part 41. The insulating part 41 can be made of any material having electrical insulating properties, and any material having electrical insulating properties can be adopted, but a material with low light absorption is used. For example, silicon oxide or silicon nitride is used. If necessary, a light reflecting structure can be formed by dispersing light reflecting powder in a light transmitting material. Alternatively, the insulating part 41 may be a multilayer reflective structure in which a plurality of insulating films having different refractive indices are alternately stacked. For example, such a multilayer reflective structure is a distributed Bragg reflector (DBR) in which a first insulating film having a first refractive index and a second insulating film having a second refractive index are alternately stacked.

[0058] In the multilayer reflective structure, a plurality of insulating films having different refractive indices are repeatedly laminated 2 to 100 times. For example, the insulating films are repeatedly laminated 3 to 70 times, and further repeatedly laminated 4 to 50 times. The insulating films in the multilayer reflective structure are each made of SiO 2 , SiN, SiO x N y , TiO 2 , Si 3 N 4 , Al 2 O 3 , TiN, AlN, ZrO 2 , oxides or nitrides such as TiAlN, TiSiN, and combinations thereof. The refractive indexes of the first insulating film and the second insulating film are determined in the range of about 1.4 to about 2.5, and are smaller than the refractive indexes of the first conductive type semiconductor layer 34 and the substrate 31, but are larger than the refractive index of the substrate 31. The LED chip (30A, 30B) of the above-mentioned form is used as a blue light emitting diode 130 of a white light emitting device (100, 100A).

[0059] In order to confirm the relationship between the melanopic / photopic ratio (M / P ratio) and color temperature of the white light emitting device according to the present invention, a number of white light emitting devices were manufactured for each color temperature.

[0060] Specifically, a blue LED emitting blue light with a wavelength of 448 nm was used together with a first wavelength conversion material (β-SiAlON) and a second wavelength conversion material ((Sr,Ca)AlSiN 3 A number of white light emitting devices were prepared by combining a first wavelength converting material and a second wavelength converting material (Eu) to reduce the M / P ratio for each color temperature. Here, the color temperature of the white light was designed to be different by adjusting the compounding ratio of the first and second wavelength converting materials. The white light emitted from the white light emitting device manufactured in this way has a color rendering index of 80 or more (85 or more in one embodiment).

[0061] The distribution of the M / P ratio of white light from a white light emitting device at each color temperature is shown in the graph of FIG.

[0062] 7 is a graph illustrating the melanopic-photopic ratio according to the color temperature of the white light emitting device according to various embodiments of the present invention. Referring to FIG. 7, the white light emitting device has a low M / P ratio of 0.65 or less, for example, the white light of the white light emitting device according to the present embodiment has a melanopic-photopic ratio in the range of 0.1 to 0.65 in the range of 1800K to 4200K. The M / P ratio of the white light tends to be lower as the color temperature is lower.

[0063] Specifically, the 1800K white light emitting device has an M / P ratio in the range of 0.15 to 0.23, the 2200K white light emitting device has an M / P ratio in the range of 0.15 to 0.23, the 2700K and 3000K white light emitting devices have M / P ratios in the ranges of 0.34 to 0.40 and 0.43 to 0.50, respectively, and the 3500K and 4000K white light emitting devices have M / P ratios in the ranges of 0.50 to 0.58 and 0.58 to 0.65, respectively.

[0064] If the distribution of M / P ratios is divided into color temperature ranges, when the color temperature of white light is in the range of 1800K to 2500K, the M / P ratio of the white light is in the range of 0.15 to 0.35. When the color temperature of white light is in the range of 2500K to 3200K, the M / P ratio of the white light is in the range of 0.3 to 0.5. When the color temperature of white light is in the range of 3200K to 4200K, the M / P ratio of the white light is in the range of 0.45 to 0.65.

[0065] The white light emitting device according to this embodiment is defined using conditions based on the spectral profile of white light (see the following spectral conditions 1 and 2). These two spectral conditions will be described with reference to FIG.

[0066] FIG. 8 is a graph showing white light emission spectra of white light emitting devices according to various embodiments of the present invention.

[0067] 8, one sample was selected for each color temperature from among the above-mentioned embodiments, and the spectrum of white light for each sample was shown. The following Table 3 shows the M / P ratio of each sample.

[0068] [Table 3]

[0069] First, the first spectrum condition is defined as the ratio of light emitted from the blue LED (i.e., unconverted light emitted from the blue LED (1)) to the total light in the blue wavelength band (2) in the final white light spectrum. Here, the integrated light amount of (1) is expressed as the integrated amount of the spectrum corresponding to the 440nm to 460nm band, and the integrated light amount of (2) is expressed as the integrated amount of the spectrum corresponding to the 380nm to 500nm band. The integrated light amount of (1) has a certain size ratio in proportion to the integrated light amount of (2), but the integrated light amount of (2) has a relatively small value because the light amount is reduced in the band related to melatonin compared to white light according to the conventional method.

[0070] As shown in Table 4 below, the ratio (1) / (2) under the first spectrum condition is in the range of 50% to 65%. That is, in the spectrum of white light according to this embodiment, the integrated light amount (1) in the 440 nm to 460 nm band is in the range of 50% to 65% of the integrated light amount (2) in the 380 nm to 500 nm band.

[0071] [Table 4]

[0072] The second spectrum condition is defined as the ratio of cyan band light (a) to green band light (b) in the final white light spectrum. Here, the integral amount of (a) is expressed as the integral amount of the spectrum corresponding to the 480nm~500nm band, and the integral amount of (b) is expressed as the integral amount of the spectrum corresponding to the 540nm~550nm band. The integral amount of (a) is the amount of light related to the M / P ratio, and has a relatively smaller value as the melanopic-photopic ratio becomes lower.

[0073] As shown in Table 4 above, the ratio (a) / (b) under the second spectrum condition is 30% or less, and preferably 26% or less. That is, in the spectrum of white light according to this embodiment, the integrated light amount in the 480-500 nm band is in the range of 26% or less of the integrated light amount in the 540-560 nm band.

[0074] 9 is a graph illustrating the first and second spectrum conditions of white light of the white light emitting device according to various embodiments of the present invention, in which (a) and (b) show the first and second spectrum conditions for each color temperature for all the samples used in FIG.

[0075] The white light emitted from the white light-emitting device according to this embodiment has a spectrum in which the integrated light amount in the 440 nm to 460 nm band is in the range of 50% to 65% of the integrated light amount in the 380 nm to 500 nm band, and the integrated light amount in the 480 nm to 500 nm band is in the range of 26% or less of the integrated light amount in the 540 nm to 560 nm band.

[0076] Here, the second spectrum condition is a value related to the melanopic-photopic ratio (M / P ratio) and is further classified according to color temperature. For example, referring to Fig. 9(b), when the color temperature of the white light is in the range of 1800K to 2800K, the integrated light amount in the 480nm to 500nm band is in the range of 10% or less of the integrated light amount in the 540nm to 560nm band, and when the color temperature of the white light is in the range of 2800K to 4200K, the integrated light amount in the 480nm to 500nm band is in the range of 10% to 26% of the integrated light amount in the 540nm to 560nm band.

[0077] The white light emitting device according to the present embodiment can be used in an LED lighting device that can regulate the secretion of melatonin hormone, which is involved in the human biorhythm, and can be used beneficially as a human-friendly night lighting device.

[0078] In one embodiment, a white light emitting device according to the above-described embodiment is employed as a first LED light source unit, and a white light emitting device configured to increase the intensity of the blue band (e.g., 465 nm to 495 nm) to suppress melatonin and improve concentration is employed as a second LED light source unit, thereby making it possible to provide an LED lighting device that can selectively provide desired illumination light in a specific environment.

[0079] 10 is a block diagram of an LED lighting device according to an embodiment of the present invention. Referring to FIG 10, the LED lighting device according to this embodiment includes a driving controller 20, a light source unit 30, and a power supply unit 40. The light source unit 30, or the driving controller 20 and the light source unit 30, are configured as one module.

[0080] The power supply unit 40 supplies AC or DC power to the light source driver 25 of the drive control unit 20. The drive control unit 20 includes the light source driver 25 and a drive signal control unit 21 that provides a drive signal for controlling the light source driver 25. The first and second drive units (25A, 25B) of the light source driver 25 are connected to the power supply unit 40 to receive power, and supply currents (I1, I2) controlled by the drive signal of the drive signal control unit 21 to the first and second LED light sources (30A, 30B). In this embodiment, the first and second drive units (25A, 25B) of the light source driver 25 control the first and second LED light sources (30A, 30B) to apply the same currents (I1, I2), respectively.

[0081] In one embodiment, the driving control unit 20 further includes a communication module for transmitting and receiving data on color characteristics such as color temperature measured inside or outside the LED lighting device. The driving control unit 20 further includes a signal processing unit for processing at least one sensor data of an illuminance sensor, a motion sensor, and an image sensor and transmitting the processed data to or from the inside or outside of the white light emitting device 100.

[0082] In this embodiment, the first LED light source 30A includes a first white light emitting device configured to reduce the intensity of a blue band (e.g., 465 nm to 495 nm) to enhance the secretion of melatonin, similar to the white light emitting device (100, 100A) according to the above-mentioned embodiment, and the second LED light source unit 30B includes a second white light emitting device configured to increase the intensity of a blue band (e.g., 465 nm to 495 nm) to suppress melatonin and improve concentration. A second white light emitting device 200 that can be used for such a second LED light source 30B is illustrated in FIG. 11.

[0083] Fig. 11 is a cross-sectional view showing a second white light emitting device that can be used as a second light source of the LED lighting device of Fig. 10. Referring to Fig. 11, the second white light emitting device 200 according to this embodiment includes a package substrate 210 having a cavity and first and second lead frames (211, 212), first and second light emitting diodes (LEDs) (230, 240) arranged in the cavity of the package substrate 210, a sidewall reflector 220 arranged on the package substrate 210 and the lead frames (211, 212) and having a cavity for accommodating the first and second LEDs (230, 240), and a wavelength converter 250 arranged in the cavity to cover the first and second LEDs (230, 240).

[0084] The first and second LEDs (230, 240) are respectively connected to the first and second lead frames (211, 212) in the cavity. In this embodiment, they are connected by wires W, but are not limited thereto, and may be connected by a flip chip method. The first LED 230 is configured to emit a first blue light having a peak wavelength in the range of 430 nm to 455 nm, and the second LED 240 is configured to emit a second blue light having a peak wavelength in the range of 465 nm to 495 nm. The wavelength conversion unit 250 includes a light-transmitting resin 252 containing wavelength conversion materials (254, 256). The wavelength conversion materials (254, 256) include a first wavelength conversion material 254 that emits a first light having a peak wavelength in the range of 520 nm to 560 nm, and a second wavelength conversion material 256 that emits a second light having a peak wavelength in the range of 590 nm to 655 nm. For example, the first wavelength conversion material 254 is Ga-Y 3 Al 5 O 12 (Hereinafter referred to as YAG) Al 5 Lu 3 O 12 , Y 3 Al 5 O 12 ·Al 5 Lu 3 O 12 The second wavelength conversion material 256 includes at least one phosphor selected from the group consisting of (Sr,Ca)AlSiN 3 :Eu, CaAlSiN 3:Eu, K x SiF y :Mn 4+ (2≦x≦3, 4≦y≦7) and combinations thereof. The transparent resin 252 includes at least two types of phosphors of the first and second wavelength conversion materials. At least one of the first and second wavelength conversion materials (254, 256) has a higher excitation efficiency by the first blue light than by the second blue light.

[0085] In this manner, the second white light emitting device 200 can reduce blue light hazards (BLH) by employing the relatively soft second blue light together with the first blue light. Also, by adjusting the intensity ratio of the first and second blue lights, the BLH can be reduced, and the color rendering index can be improved by combining the first and second wavelength conversion materials (254, 256).

[0086] FIG. 12 is a graph showing the emission spectra of the first and second white lights emitted from the first and second white light emitting devices of the LED lighting device according to one embodiment of the present invention. As shown in FIG. 12, in the spectrum B of the white light of the second white light emitting device 200, the peak intensity of the second blue light is 50% or more of the peak intensity of the first blue light. The peak intensity ratio of the two blue lights is selected to be 70% or more to reduce the BLH, and further the peak intensity of the second blue light is selected to be greater than the peak intensity of the first blue light. The wavelength and intensity ratio of the second blue light are adjusted within a range in which the color rendering index (CRI) is maintained at 80 or more, preferably 85 or more. In addition, from the viewpoint of color rendering, the maximum intensity in the 520nm to 560nm band is in the range of 40% to 160% of the peak intensity of the second blue light.

[0087] In this way, by combining a first light (e.g., cyan, green, or yellow) having a peak wavelength in the range of 520nm to 560nm and a second light having a peak wavelength in the range of 590nm to 655nm, together with a first blue light having a peak wavelength in the range of 430nm to 455nm and a second blue light having a peak wavelength in the range of 465nm to 495nm, it is possible to provide white light for human-friendly illumination (especially in the daytime). The color rendering index (CRI) of such white light is maintained at 80 or more, preferably 85 or more.

[0088] 12 illustrates a spectrum A of white light from the first white light emitting device (100, 100A) according to the above-mentioned embodiment together with a spectrum B of white light from the second white light emitting device 200. The white light A from the first white light emitting device provides white light (especially at night) that is gentle on humans and promotes the secretion of melatonin hormone by reducing the intensity of the blue band.

[0089] In one embodiment, the first white light A has a melanopic-photopic (M / P) ratio of 0.65 or less, and the second white light B has a melanopic-photopic (M / P) ratio of 0.5 or more.

[0090] In this embodiment, the light source driver 25 independently controls the currents supplied to the first and second LED light sources (30A, 30B) according to the driving signal of the driving signal controller 21. For example, the first LED light source 30A is driven at night to provide illumination suitable for nighttime, and the second LED light source 30B is driven during the day to provide illumination suitable for daytime. In one embodiment, the light source unit 30 is manufactured so as to be controlled by the driving controller 20 to emit white light having intermediate characteristics by mixing the white lights generated from the first and second LED light source units (30A, 30B). In this case, the luminous flux of the mixed white light is maintained within a certain range.

[0091] Although not limited thereto, the first white light of the first LED light source 30A is generally realized in a lower color temperature range than the second white light of the second LED light source 30B.

[0092] 13 is a graph illustrating selective control of the first and second white lights of an LED lighting device according to an embodiment of the present invention. For example, as shown in FIG. 13, the first white light A of the first LED light source 30A has a color temperature in the range of 800K to 4000K, and the second white light B of the second LED light source 30B has a color temperature of 3000K or higher.

[0093] The selective control of the first and second white lights is determined in consideration of the range of achievable color temperatures. For example, as represented by "II", the light source unit 30 of the LED lighting device is configured so that the first white light A has a first color temperature (e.g., 2700K) and the second white light B has a second color temperature (e.g., 5000K) higher than the first color temperature, and in this case, it is driven to emit one of the first and second white lights (A, B) of the other color temperature according to the desired environment.

[0094] Alternatively, in one embodiment, as indicated by "I", the first and second white lights (A, B) have the same or similar color temperature, and are driven to emit one of the first and second white lights (A, B) having the same or similar color temperature according to a desired environment. In this case, the first white light A and the second white light B have a color temperature in the range of 3000K to 4000K.

[0095] FIG. 14 is a perspective view showing a schematic configuration of a light emitting module for an LED lighting device according to one embodiment of the present invention, and FIG. 15 is a cross-sectional view of the light emitting module of FIG. 14 taken along line II'.

[0096] 14 and 15, the light source module 1000 according to the present embodiment includes a circuit board 1100, first and second LED light sources (100', 200') mounted on the circuit board 1100, a dam 1200 surrounding the first and second LED light sources (100', 200'), a sealing part 1300 covering the first and second LED light sources (100', 200'), and a driving control chip 1400. The first and second LED light sources (100', 200') each include a plurality of the first and second white light emitting devices described in the above embodiment. Also, the driving control part 20 described in FIG. 10 is realized by the driving control chip 1400.

[0097] The circuit board 1100 includes conductive and insulating materials, and has a metal pattern 1155 connected to the first and second LED light sources 100' and 200' and a terminal portion 1150 connected to the metal pattern 1155 disposed on the upper surface.

[0098] The circuit board 1100 is, for example, a printed circuit board (PCB) of FR4 type, and is made of organic resin containing epoxy, triazine, silicon, polyimide, etc., or SiN, AlN, Al 2 O 3 The circuit board 1100 may include, for example, a PCB, an MCPCB, an MPCB, an FPCB, a CCL, an MCCL, or the like.

[0099] The metal pattern 1155 is electrically connected to the first and second LED light sources (100', 200') and is electrically connected to an external power source via the terminal unit 1150 to apply an electrical signal to the first and second LED light sources (100', 200'). The metal pattern 1155 and the terminal unit 1150 have the form of a conductive thin film, for example, made of copper foil.

[0100] A plurality of first and second LED light sources (100', 200') are disposed on a substrate 1100. The first and second LED light sources (100', 200') each include an LED chip (110 in FIG. 16) having a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed therebetween. The first LED light source 100' includes the first white light emitting device described in the above embodiment, and the second LED light source 200' includes the second white light emitting device described in the above embodiment.

[0101] The dam 1200 is disposed on the circuit board 1100 to surround the first and second LED light sources (100', 200') to define an internal light-emitting region. The dam 1200 is disposed to protrude above the upper surface of the circuit board 1100 and has a ring shape. However, the shapes of the circuit board 1100 and the dam 1200 in this embodiment are not limited to a square or a circle, respectively, and therefore the arrangement of the first and second LED light sources (100', 200') may be modified in various ways. In one embodiment, the dam 1200 is omitted.

[0102] The encapsulant 1300 fills the space partitioned by the dam 1200 and covers the first and second LED light sources (100', 200'). The encapsulant 1300 is formed in a dome shape that bulges upward to adjust the directional angle of the light emitted to the outside, but is not limited thereto. The encapsulant 1300 is made of a light-transmitting material so that the light generated from the first and second LED light sources (100', 200') can be emitted to the outside. The light-transmitting material can be, for example, a resin such as silicone or epoxy. The encapsulant 1300 is formed by injecting a resin onto the circuit board 1100 and curing it by heating, irradiating light, passing time, etc. In one embodiment, the encapsulant 1300 includes a light-reflecting material to diffuse the light emitted to the outside. The light-reflecting material can be, for example, SiO 2 , TiO 2 , Al 2 O 3 However, in one embodiment, the encapsulant 1300 is omitted and each of the first and second LED light sources (100', 200') includes a lens.

[0103] The first LED light source 100' employed in this embodiment is realized in the package structure of the conventional white light emitting device (100, 100A) according to the above-mentioned embodiments, but may be realized in the form of a chip-scale package as shown in FIG.

[0104] Fig. 16 is a side cross-sectional view showing an example of a white light emitting device that can be used in the LED lighting device of Fig. 14. Referring to Fig. 16, a first LED light source 100' according to this embodiment includes a blue LED chip 110 that emits blue light, first and second electrodes (150a, 150b) disposed on the bottom surface of the blue LED chip 110, a reflective layer 160 that surrounds the side surfaces of the blue LED chip 110, and a wavelength conversion part 170 disposed on the top surface of the blue LED chip 110.

[0105] The first and second electrodes 150a and 150b are made of a conductive material and are electrically connected to the first and second electrode patterns 1120a and 1120b of the circuit board 1100 by first and second bumps Sa and Sb, respectively. The reflective layer 160 reflects light emitted from the blue LED chip 110 to the side so that the light is directed upward. The reflective layer 160 includes a light reflective material, for example, SiO 2 , TiO 2 , or Al 2 O 3 Contains white powder such as

[0106] The wavelength conversion unit 170 includes first and second wavelength conversion materials that convert a part of the blue light emitted from the blue LED chip 110 into another wavelength, similar to the wavelength conversion units 150 and 150A of the above-described embodiments.

[0107] FIG. 17 is a perspective view showing a flat panel lighting device according to an embodiment of the present invention.

[0108] 17, a flat panel lighting device 4100 includes a light source module 4110, a power supply device 4120, and a housing 4130. The power supply device 4120 includes a driving control unit.

[0109] The light source module 4110 includes a light source array and is generally formed in a planar shape. The light source constituting the light source module 4110 is configured to include the white light emitting device (100, 100A) shown in Figures 1 and 5, or the light source module 4110 is realized by the LED module 1000 shown in Figure 14.

[0110] The power supply device 4120 is configured to supply power to the light source module 4110. The housing 4130 has an accommodation space formed therein to accommodate the light source module 4110 and the power supply device 4120, and is formed in a hexahedral shape with one side open, but is not limited thereto. The light source module 4110 is disposed to emit light from the one open side of the housing 4130. Unlike the present embodiment, at least a part of the phosphor of the wavelength conversion material used in the white light emitting device may be disposed in other components (e.g., light guide plate, diffusion plate, lens) of the flat panel lighting device 4100 other than the white light emitting device.

[0111] FIG. 18 is an exploded perspective view showing a bulb-type lighting device according to one embodiment of the present invention.

[0112] Referring to FIG. 18, a light bulb-type lighting device 4300 includes a socket 4210, a power supply unit 4220, a heat dissipation unit 4230, a light source module 4240, and a lens-type optical unit 4330.

[0113] The socket 4210 is configured to be replaceable with an existing lighting device. Power supplied to the lighting device 4200 is applied through the socket 4210. As shown in the figure, the power supply unit 4220 is assembled separately into a first power supply unit 4221 and a second power supply unit 4222. The heat dissipation unit 4230 includes an internal heat dissipation unit 4231 and an external heat dissipation unit 4232, and the internal heat dissipation unit 4231 is directly connected to the light source module 4240 and / or the power supply unit 4220, thereby allowing heat to be transferred to the external heat dissipation unit 4232. The lens-type optical unit 4330 is configured to uniformly distribute light emitted by the light source module 4240.

[0114] The light source module 4240 receives power from the power supply unit 4220 and emits light to the lens-type optical unit 4330. The light source module 4240 includes one or more light sources 4241, a circuit board 4242, and a controller 4243, and the controller 4243 stores driving information for the light sources 4241. Each light source 4241 is configured to include the white light emitting device (100, 100A) shown in Fig. 1 and Fig. 5, or the light source module 4240 is realized by the LED module 1000 shown in Fig. 14.

[0115] In the light bulb type lighting device 4300 according to this embodiment, a reflector 4310 is included on the upper part of the light source module 4240, and the reflector 4310 spreads the light from the light source uniformly to the sides and rear to reduce glare.

[0116] A communication module 4320 is attached to the upper part of the reflector 4310, and home-network communication is realized through the communication module 4320. For example, the communication module 4320 is a wireless communication module using Zigbee (registered trademark), WiFi, or LiFi, and lighting installed inside and outside the home can be controlled, such as turning on / off the lighting device and adjusting the luminance, through a smartphone or a wireless controller. In addition, electronic products and automobile systems inside and outside the home, such as TVs, refrigerators, air conditioners, door locks, and automobiles, can be controlled using a LiFi communication module using the visible light wavelength of lighting devices installed inside and outside the home. The reflector 4310 and the communication module 4320 are covered by a lens-type optical unit 4330.

[0117] Although the embodiments of the present invention have been described in detail above with reference to the drawings, the present invention is not limited to the above-described embodiments and can be modified in various ways without departing from the technical spirit of the present invention. [Explanation of symbols]

[0118] 20 Drive control unit 21 Drive signal control section 25 Light source driver 25A, 25B 1st and 2nd drive units 30 Light source unit 30A, 100' 1st LED light source (LED chip) 30B, 200' Second LED light source (LED chip) 31 Substrate 32 Buffer Layer 34, 36 First and second conductive type semiconductor layers 35 Active layer 39a, 42, 150a 1st electrode 39b, 44, 150b 2nd electrode 40 Power supply section 41 Insulation section 42a Connecting electrode part 42b, 44b First and second electrode pads 44a Ohmic contact layer 100, 100A (1st) White light emitting device 101, 210 Package substrate 110 (blue) LED chip 111, 112 Lead frame 120 Side wall reflector 130 Blue LED 150, 150A, 170, 250 Wavelength conversion unit 152 Transparent resin 154, 154b', 254 First wavelength conversion material 156, 256 Second Wavelength Conversion Material 154' Wavelength conversion film 154a' transparent resin 160 reflective layer 200 (2nd) White light emitting device 211, 212 First and second lead frames 220 Side wall reflector 230, 240 First and second light emitting diodes (LEDs) 252 Translucent resin 1000 LED Module 1100 Circuit Board 1120a, 1120b First and second electrode patterns 1150 Terminal section 1155 Metal Pattern 1200 Dam 1300 Sealing part 1400 Drive control chip 4100 Flat lighting device 4110 Light Source Module 4120 Power supply equipment 4130 Housing 4200 Lighting Equipment 4210 Socket 4220 Power supply section 4221, 4222 1st and 2nd power supply section 4230 Heat dissipation part 4231, 4232 Internal and external heat dissipation section 4232 4240 Light Source Module 4241 Light source 4242 Circuit Board 4243 Controller 4300 Bulb-type lighting device 4310 Reflector 4320 Communication Module 4330 Lens-type optical unit

Claims

1. a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm; a first wavelength converting material that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less; A white light emitting device having a second wavelength conversion material excited by the blue light to emit a second light having a peak wavelength in a range of 620 nm to 660 nm, The white light emitted from the white light emitting device has a melanopic photopic ratio of 0.65 or less; The color temperature of the white light is in the range of 1800K to 2800K; In the spectrum of the white light, an integrated light amount in a 480 nm to 500 nm band is in a range of 10% or less of an integrated light amount in a 540 nm to 560 nm band, The white light emitting device has a color rendering index (CRI) of 80 or more.

2. 2. The white light emitting device according to claim 1, wherein the intensity at 480 nm in the spectrum of the first light is 2% or less of the intensity of the peak wavelength of the first light.

3. 2. The white light emitting device according to claim 1, wherein the first wavelength conversion material comprises a β-SiAlON phosphor.

4. The second wavelength conversion material is (Sr,Ca)AlSiN ３ :Eu ２＋ , CaAlSiN ３ :Eu ２＋ , and K ｘ SiF ｙ : Mn ４＋ 2. The white light emitting device according to claim 1, further comprising at least one red phosphor selected from the group consisting of (2≦x≦3, 4≦y≦7).

5. The white light emitting device according to claim 1 , wherein the second light emitted from the second wavelength conversion material has a half width of 70 nm or more.

6. 2. The white light emitting device according to claim 1, wherein the white light has a color rendering index (CRI) of 85 or more.

7. a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm; a wavelength conversion unit that converts a portion of the blue light and combines the converted light with another unconverted portion to provide white light; The wavelength converting portion is a first wavelength converting material that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm; a second wavelength converting material that is excited by the blue light to emit a second light having a peak wavelength in the range of 620 nm to 660 nm; In the spectrum of the first light, an intensity at 480 nm is 2% or less of an intensity of a peak wavelength of the first light, The melanopic-photopic ratio of the white light is 0.65 or less; The color temperature of the white light is in the range of 1800K to 2800K; In the spectrum of the white light, an integrated light amount in a 480 nm to 500 nm band is in a range of 10% or less of an integrated light amount in a 540 nm to 560 nm band, The white light emitting device has a color rendering index (CRI) of 80 or more.

8. 8. The white light emitting device of claim 7, wherein the first wavelength conversion material comprises at least one of a β-SiAlON phosphor and a quantum dot.

9. a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm; a first wavelength converting material that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less; A white light emitting device having a second wavelength conversion material excited by the blue light to emit a second light having a peak wavelength in a range of 620 nm to 660 nm, the melanopic-photopic ratio of the white light emitted from the white light emitting device is 0.65 or less; The color temperature of the white light is in the range of 1800K to 2800K; In the spectrum of the white light, an integrated light amount in a 440 nm to 460 nm band is in the range of 50% to 65% of an integrated light amount in a 380 nm to 500 nm band, and an integrated light amount in a 480 nm to 500 nm band is in the range of 10% or less of an integrated light amount in a 540 nm to 560 nm band.

10. a first LED light source configured to emit a first white light having a first melanopic-photopic ratio; a second LED light source configured to emit a second white light having a second melanopic photopic ratio higher than the first melanopic photopic ratio; a drive control unit that controls a current applied to each of the first LED light source and the second LED light source, The first LED light source is a blue light emitting diode that emits blue light having a peak wavelength in the range of 440 nm to 455 nm; a first wavelength converting material that is excited by the blue light to emit a first light having a peak wavelength in the range of 535 nm to 550 nm and a half width of 60 nm or less; a second wavelength converting material that is excited by the blue light to emit a second light having a peak wavelength in the range of 620 nm to 660 nm; The color temperature of the first white light is in the range of 1800K to 2800K; In the spectrum of the first white light, an integrated light amount in a 480 nm to 500 nm band is in a range of 10% or less of an integrated light amount in a 540 nm to 560 nm band.

11. 11. The LED lighting device according to claim 10, wherein the first and second white lights each have a color rendering index of 80 or more.

12. the first melanopic-photopic ratio is 0.65 or less; 11. The LED lighting device according to claim 10, wherein the second melanopic-photopic ratio is 0.5 or more.

Images