Functional panel, display device, input / output device, information processing device

Abstract

To provide a novel function panel with excellent convenience and reliability.SOLUTION: A function panel includes first pixels 702G(ij) and 702B(ij). The first pixels include first elements 550G(ij) and 550B(ij), a color conversion layer, and a first function layer 520. The first element includes the first function layer 520 between the first element and the color conversion layer. The first element has a function of emitting light. The first element contains gallium nitride. The color conversion layer has a function of converting the color of the light emitted from the first element into a different color. The first function layer 520 includes a first insulating film and pixel circuits 530G(ij) and 530B(ij). The first insulating film includes a region held between the pixel circuit and the first element. The first insulating film includes an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film. The first transistor is electrically connected to the first element in the opening.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] One embodiment of the present invention relates to a functional panel, a display device, an input / output device, a data processor, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] A display in which the chromaticity change of the micro light-emitting diode with respect to the current density is small is known (Patent Document 1). Specifically, each of the multiple pixels has a display element and a microcontroller. The microcontroller has a first transistor, a triangular wave generating circuit, a comparator, a switch, and a constant current circuit. The first transistor has a function of holding a potential corresponding to data written to the pixel by being turned off. The triangular wave generating circuit has a function of generating a triangular wave signal. The comparator has a function of generating an output signal corresponding to the held potential and the triangular wave signal. The switch is a display having a function of controlling whether or not the current flowing through the constant current circuit is passed to the display element according to the output signal. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. WO2019 / 130138 Brochure Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment of the present invention is to provide a novel functional panel with excellent convenience, usefulness, or reliability. Another object is to provide a novel display device with excellent convenience, usefulness, or reliability. Another object is to provide a novel input / output device with excellent convenience, usefulness, or reliability. Another object is to provide a novel information processing device with excellent convenience, usefulness, or reliability. Another object is to provide a novel functional panel, a new display device, a new input / output device, a new information processing device, or a new semiconductor device.

[0006] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0007] (1) One aspect of the present invention is a functional panel having a first pixel, the first pixel including a first element, a color conversion layer, and a first functional layer.

[0008] The first element has a first functional layer sandwiched between the color conversion layer and the first element, the first element has a function of emitting light, and the first element includes gallium nitride.

[0009] The color conversion layer has a function of converting the color of the light emitted by the first element into a different color.

[0010] The first functional layer includes a first insulating film and a pixel circuit, the first insulating film includes a region sandwiched between the pixel circuit and the first element, and the first insulating film includes an opening.

[0011] The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film. The first transistor is electrically connected to the first element through an opening.

[0012] (2) One aspect of the present invention is a functional panel having a first pixel, the first pixel including a first element and a first functional layer.

[0013] The first element has a function of emitting light, and the first element includes a first electrode, a second electrode, and a layer including a light-emitting material. The layer including the light-emitting material includes a region sandwiched between the first electrode and the second electrode, and the layer including the light-emitting material includes gallium nitride.

[0014] The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region sandwiched between the pixel circuit and the first element, and the first insulating film includes an opening.

[0015] The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film. The first transistor is electrically connected to a first electrode in an opening.

[0016] This allows the pixel circuit to be disposed so as to overlap the first element. Alternatively, the ratio of the area of ​​the first element to the area of ​​the first pixel can be increased. Alternatively, high luminance can be obtained while suppressing the current density flowing through the first element. Alternatively, reliability can be improved compared to a configuration in which an organic compound is used in a layer containing a light-emitting material. Alternatively, current leaking from the first transistor in an off state can be suppressed. Alternatively, distribution is unlikely to occur in the operating characteristics of the transistor, and display unevenness can be suppressed. Alternatively, the operating characteristics of the pixel circuit can be stabilized. As a result, a novel functional panel with excellent convenience, usefulness, or reliability can be provided.

[0017] (3) Another aspect of the present invention is a functional panel, in which the first insulating film includes a second insulating film and a third insulating film.

[0018] The second insulating film has a region between the first transistor and the third insulating film, the second insulating film contains silicon and oxygen, and the third insulating film contains silicon and nitrogen.

[0019] This makes it possible to suppress the diffusion of impurities into the first transistor, which may cause operational problems. Alternatively, it is possible to suppress the diffusion of impurities such as water or hydrogen into the first transistor. As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0020] (4) Another aspect of the present invention is the above functional panel having a set of pixels.

[0021] The set of pixels comprises a first pixel and a second pixel, the second pixel comprising a second element.

[0022] The first insulating film comprises a fourth insulating film, the fourth insulating film having a function of isolating the second element from the first element.

[0023] This makes it possible to suppress the influence of the operation of the first element on the operation of the second element. Alternatively, the second element can be arranged closer to the first element. Alternatively, the ratio of the area of ​​the first element to the area of ​​the first pixel and the ratio of the area of ​​the second element to the area of ​​the second pixel can be increased. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0024] (5) Another aspect of the present invention is the functional panel described above, which has a first driving circuit.

[0025] The first functional layer includes a first drive circuit, the first drive circuit including a second transistor.

[0026] The second transistor includes a second oxide semiconductor film, and the second oxide semiconductor film contains an element contained in the first oxide semiconductor film.

[0027] This makes it possible to form a semiconductor film of a transistor included in the first driver circuit in a process of forming a semiconductor film of a transistor included in a pixel circuit. Alternatively, the manufacturing process of a functional panel can be simplified. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0028] (6) Moreover, one aspect of the present invention is the above functional panel having a second functional layer.

[0029] The second functional layer includes a first contact, a second drive circuit, and a fifth insulating film.

[0030] The first contact is electrically connected to a second drive circuit, the second drive circuit including a third transistor, the third transistor comprising a semiconductor including a Group 14 element.

[0031] The first functional layer comprises a sixth insulating film and a second contact, the sixth insulating film comprises a region sandwiched between the fifth insulating film and the fourth insulating film, and the sixth insulating film comprises a region bonded to the fifth insulating film.

[0032] The second contact is electrically connected to the first contact, and the second contact is electrically connected to the pixel circuit.

[0033] This allows, for example, a pixel signal to be supplied using the second driver circuit. Alternatively, for example, a transistor using single crystal silicon as a semiconductor can be used for the second driver circuit. Alternatively, for example, the second driver circuit can be arranged so as to overlap the first pixel. Alternatively, the outer shape of the functional panel can be reduced in size. As a result, a novel functional panel that is excellent in convenience, usefulness, and reliability can be provided.

[0034] (7) Another aspect of the present invention is the functional panel described above, wherein the second pixel has a function of displaying light emitted by the second element.

[0035] The second element has a function of emitting light of the same color as the color of light emitted by the first element, and the first pixel has a color conversion layer, which has a function of converting the color of the light emitted by the first element into a different color.

[0036] This allows the second element to be formed in the same process as the first element. Alternatively, the first pixel can be used to display a color different from that of the second pixel. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0037] (8) Another aspect of the present invention is the functional panel described above having an area.

[0038] A region comprises a group of a set of pixels and another group of a set of pixels.

[0039] The group of pixels is arranged in a row direction, includes a set of pixels, and is electrically connected to a first conductive film.

[0040] The other set of pixels is arranged in a column direction intersecting with the row direction, and includes a set of pixels. The other set of pixels is electrically connected to the second conductive film.

[0041] This makes it possible to supply image information to a plurality of pixels, thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0042] (9) Another aspect of the present invention is a display device having a control unit and the above-described functional panel.

[0043] The control unit is supplied with image information and control information, the control unit generates information based on the image information, the control unit generates a control signal based on the control information, and the control unit supplies the information and the control signal.

[0044] The functional panel is supplied with information and control signals, and a set of pixels displays based on the information.

[0045] This makes it possible to display image information using the first element, thereby providing a novel display device that is highly convenient, useful, and reliable.

[0046] (10) Another embodiment of the present invention is an input / output device including an input unit and a display unit.

[0047] The display unit includes the functional panel described above. The input unit includes a detection area, and the input unit detects an object adjacent to the detection area. The detection area includes an area overlapping the set of pixels.

[0048] This makes it possible to detect an object that is close to an area overlapping with the display unit while displaying image information using the display unit. Alternatively, position information can be input using a finger or the like that is brought close to the display unit as a pointer. Alternatively, position information can be associated with image information displayed on the display unit. As a result, it is possible to provide a novel input / output device that is highly convenient, useful, and reliable.

[0049] (11) Another embodiment of the present invention is a data processing device including an arithmetic device and an input / output device.

[0050] The computing device is provided with input information or sensing information, and the computing device generates control information and image information based on the input information or sensing information, and the computing device provides the control information and image information.

[0051] The input / output device provides input information and sensing information, the input / output device is provided with control information and image information, and the input / output device includes a display unit, an input unit, and a sensing unit.

[0052] The display unit includes the above-mentioned functional panel, and displays image information based on the control information, the input unit generates input information, and the detection unit generates detection information.

[0053] This makes it possible to generate control information based on input information or detection information. Alternatively, it is possible to display image information based on input information or detection information. As a result, it is possible to provide a novel information processing device that is highly convenient, useful, and reliable.

[0054] (12) Another aspect of the present invention is an information processing device including one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye gaze input device, and a posture detection device, and the above-mentioned functional panel.

[0055] This allows the arithmetic unit to generate image information or control information based on information supplied using various input devices, thereby providing a novel information processing device that is highly convenient, useful, and reliable.

[0056] In the drawings accompanying this specification, components are classified by function and shown in block diagrams as independent blocks; however, in actuality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0057] In this specification, the names of the source and drain of a transistor are interchanged depending on the polarity of the transistor and the level of the potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In addition, in a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for convenience, the connection relationship of a transistor may be described assuming that the source and drain are fixed, but in reality, the names of the source and drain are interchanged according to the above-mentioned potential relationship.

[0058] In this specification, the source of a transistor means a source region that is a part of a semiconductor film that functions as an active layer, or a source electrode connected to the semiconductor film. Similarly, the drain of a transistor means a drain region that is a part of the semiconductor film, or a drain electrode connected to the semiconductor film. Furthermore, the gate means a gate electrode.

[0059] In this specification, a state in which transistors are connected in series means, for example, a state in which only one of the source or drain of a first transistor is connected to only one of the source or drain of a second transistor, and a state in which transistors are connected in parallel means a state in which one of the source or drain of a first transistor is connected to one of the source or drain of a second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor.

[0060] In this specification, the term "connection" refers to an electrical connection, and corresponds to a state in which a current, voltage, or potential can be supplied or transmitted. Therefore, the state of being connected does not necessarily refer to a state of being directly connected, but also includes a state of being indirectly connected via a circuit element such as a wiring, resistor, diode, or transistor so that a current, voltage, or potential can be supplied or transmitted.

[0061] In this specification, even if components that are independent on a circuit diagram are connected to each other, in reality, one conductive film may have the functions of multiple components, for example, when part of a wiring functions as an electrode. In this specification, the term "connection" also includes such cases in which one conductive film has the functions of multiple components.

[0062] In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode. Effect of the Invention

[0063] According to one embodiment of the present invention, a novel functional panel with excellent convenience, usefulness, or reliability can be provided. Or, a novel display device with excellent convenience, usefulness, or reliability can be provided. Or, a novel input / output device with excellent convenience, usefulness, or reliability can be provided. Or, a novel information processing device with excellent convenience, usefulness, or reliability can be provided. Or, a novel functional panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

[0064] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract effects other than these from the description in the specification, drawings, claims, etc. [Brief description of the drawings]

[0065] [Figure 1] 1A to 1C are diagrams illustrating a configuration of a functional panel according to an embodiment. [Diagram 2] FIG. 2 is a top view illustrating the configuration of the functional panel according to the embodiment. [Diagram 3] FIG. 3 is a circuit diagram illustrating a configuration of the functional panel according to the embodiment. [Figure 4] 4(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Diagram 5] 5(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 6] 6(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 7] FIG. 7 is a diagram illustrating a configuration of a functional panel according to an embodiment. [Figure 8]8A to 8D are diagrams illustrating a structure of a display device according to an embodiment. [Figure 9] FIG. 9 is a block diagram illustrating a configuration of an input / output device according to an embodiment. [Figure 10] 10A to 10C are block diagrams and projection diagrams illustrating the configuration of an information processing device according to an embodiment. [Figure 11] 11(A) and (B) are flowcharts illustrating a method for driving an information processing device according to an embodiment. [Figure 12] 12A to 12C are diagrams illustrating a method for driving the information processing device according to the embodiment. [Figure 13] 13A to 13E are diagrams illustrating the configuration of an information processing device according to an embodiment. [Figure 14] 14A to 14E are diagrams illustrating the configuration of an information processing device according to an embodiment. [Figure 15] 15(A) and (B) are diagrams illustrating the configuration of an information processing device according to an embodiment. [Figure 16] FIG. 16 is a diagram illustrating a configuration of a functional panel according to an embodiment. [Figure 17] 17A to 17C are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 18] 18A to 18C are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 19] FIG. 19 is a diagram illustrating a configuration of a functional panel according to an embodiment. [Figure 20] FIG. 20 is a cross-sectional view illustrating a configuration of a functional panel according to an embodiment. [Figure 21] 21A is a top view of a semiconductor device according to one embodiment of the present invention, and FIGS. 21B to 21D are cross-sectional views of the semiconductor device according to one embodiment of the present invention. [Figure 22]Fig. 22(A) is a diagram explaining the classification of IGZO crystal structures, Fig. 22(B) is a diagram explaining the XRD spectrum of a CAAC-IGZO film, and Fig. 22(C) is a diagram explaining the ultrafine electron beam diffraction pattern of a CAAC-IGZO film. [Figure 23] 23(A) and (B) are cross-sectional views illustrating the configuration of a functional panel according to an embodiment. [Figure 24] 24(A) and (B) are diagrams showing configuration examples of electronic devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0066] A functional panel according to one embodiment of the present invention has a first pixel, the first pixel including a first element, a color conversion layer, and a first functional layer. The first element sandwiches the first functional layer between the color conversion layer and the first element, the first element has a function of emitting light, and the first element includes gallium nitride. The color conversion layer has a function of converting the color of light emitted by the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit, the first insulating film includes a region sandwiched between the pixel circuit and the first element, and the first insulating film includes an opening. The pixel circuit includes a first transistor, the first transistor includes a first oxide semiconductor film, and the first transistor is electrically connected to a first electrode in the opening.

[0067] This allows the pixel circuit to be arranged overlapping the first element. Also, the ratio of the area of ​​the first element to the area of ​​the first pixel can be increased. Also, high brightness can be obtained while suppressing the current density flowing through the first element. Also, reliability can be improved compared to a configuration in which an organic compound is used in a layer containing a light-emitting material. Also, current leaking from the first transistor in an off state can be suppressed. Also, distribution is unlikely to occur in the operating characteristics of the transistor, and display unevenness can be suppressed. Also, the operating characteristics of the pixel circuit can be stabilized. As a result, a novel functional panel with excellent convenience, usefulness, or reliability can be provided.

[0068] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention is not interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated explanations are omitted.

[0069] (Embodiment 1) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS.

[0070] FIG. 1A is a block diagram of a functional panel according to one embodiment of the present invention, and FIGS. 1B and 1C are diagrams illustrating a part of FIG. 1A.

[0071] FIG. 2 illustrates a configuration of a functional panel according to one embodiment of the present invention, and illustrates a part of FIG.

[0072] FIG. 3 is a circuit diagram of a pixel circuit 530G(i,j) that can be used in a functional panel according to one embodiment of the present invention.

[0073] Fig. 4(A) is a diagram illustrating a configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view taken along the cutting lines X1-X2, X3-X4, and X9-X10 in Fig. 1(A) and a pair of pixels 703(i,j). Fig. 4(B) is a diagram illustrating a configuration of a functional panel according to one embodiment of the present invention, which is different from that in Fig. 4(A).

[0074] Fig. 5A is a diagram illustrating a structure of a functional panel according to one embodiment of the present invention and is a cross-sectional view of a pixel 702G(i,j) illustrated in Fig. 1B. Fig. 5B is a cross-sectional view illustrating a part of Fig. 5A.

[0075] Fig. 6(A) is a diagram illustrating the configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view taken along lines X1-X2 and X3-X4 in Fig. 1(A). Fig. 6(B) is a diagram illustrating a portion of Fig. 6(A).

[0076] In this specification, variables whose values ​​are integers of 1 or more may be used in codes. For example, (p) including a variable p whose value is an integer of 1 or more may be used as part of a code that specifies any one of up to p components. Also, for example, (m, n) including variables m and n whose values ​​are integers of 1 or more may be used as part of a code that specifies any one of up to m×n components.

[0077] <Configuration example 1 of function panel 700> A functional panel 700 described in this embodiment has pixels 702G(i,j) (see FIGS. 1(A) and 1(B)).

[0078] <<Configuration example 1 of pixel 702G(i,j)>> The pixel 702G(i,j) includes an element 550G(i,j) and a functional layer 520 (see FIGS. 1(C) and 5(A)).

[0079] Configuration example 1 of element 550G(i,j) The element 550G(i,j) has a function of emitting light, and includes an electrode 551(i,j), an electrode 552, and a layer 553 containing a light-emitting material (see FIG. 5(A)). For example, a light-emitting diode can be used for the element 550G(i,j). Specifically, a vertical light-emitting diode can be used for the element 550G(i,j). Also, a light-emitting diode that emits blue light can be used for the element 550G(i,j).

[0080] The layer 553 including the light-emitting material has a region sandwiched between the electrode 551(i,j) and the electrode 552, and the layer 553 including the light-emitting material includes gallium nitride.

[0081] Configuration example 1 of functional layer 520 The functional layer 520 includes an insulating film 501 and a pixel circuit 530G(i,j) (see FIGS. 4(A), 4(B), and 5(A)). The functional layer 520 includes, for example, a transistor M21 used in the pixel circuit 530G(i,j) (see FIGS. 3 and 5(A)).

[0082] Configuration example 1 of insulating film 501 The insulating film 501 has a region sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j), and the insulating film 501 has an opening 591G(i,j).

[0083] Example of configuration of pixel circuit 530G(i,j) The pixel circuit 530G(i,j) includes a transistor M21 (see FIGS. 3 and 5(A)). The transistor M21 is electrically connected to an electrode 551(i,j) in an opening 591G. The transistor M21 includes an oxide semiconductor film. For example, a conductive film 512A electrically connects the transistor M21 and the electrode 551(i,j). The conductive film 512B electrically connects the transistor M21 and the conductive film ANO (see FIG. 3).

[0084] This allows the pixel circuit 530G(i,j) to be arranged so as to overlap the element 550G(i,j). Alternatively, the ratio of the area of ​​the element 550G(i,j) to the area of ​​the pixel 702G(i,j) can be increased. Alternatively, high luminance can be obtained while suppressing the current density flowing through the element 550G(i,j). Alternatively, reliability can be improved compared to a configuration in which an organic compound is used for the layer 553 containing a light-emitting material. Alternatively, current leaking from the transistor M21 in the off state can be suppressed. Alternatively, distribution is unlikely to occur in the operating characteristics of the transistor, and display unevenness can be suppressed. Alternatively, the operating characteristics of the pixel circuit 530G(i,j) can be stabilized. As a result, a novel functional panel with excellent convenience, usefulness, or reliability can be provided.

[0085] Configuration example 2 of insulating film 501 The insulating film 501 includes an insulating film 501B and an insulating film 501C. The insulating film 501B has a region sandwiching the insulating film 501C between the transistor M21 and the insulating film 501B, and contains silicon and oxygen. The insulating film 501C contains silicon and nitrogen.

[0086] This makes it possible to suppress the diffusion of impurities into the transistor M21 that may cause operational problems. Alternatively, it is possible to suppress the diffusion of impurities such as water or hydrogen into the transistor M21. As a result, it is possible to provide a novel functional panel that is highly convenient, useful, and reliable.

[0087] <Configuration example 2 of function panel 700> The functional panel described in this embodiment has a set of pixels 703(i,j).

[0088] Configuration example 1 of a pair of pixels 703(i,j) The set of pixels 703(i,j) comprises pixel 702G(i,j) and pixel 702B(i,j) (see FIG. 1(B)). Pixel 702B(i,j) comprises element 550B(i,j).

[0089] The insulating film 501 includes an insulating film 501A, which has a function of isolating the element 550B(i,j) from the element 550G(i,j) (see FIG. 5(A)). Specifically, the insulating film 501A has a function of isolating the light-emitting layer 553EM from the adjacent elements.

[0090] This can suppress the influence of the operation of the element 550G(i,j) on the operation of the element 550B(i,j). Specifically, it can suppress the crosstalk phenomenon in which the element 550B(i,j) operates unintentionally due to the operation of the element 550G(i,j). Alternatively, it can arrange the element 550B(i,j) closer to the element 550G(i,j). Alternatively, it can increase the ratio of the area of ​​the element 550G(i,j) to the area of ​​the pixel 702G(i,j) and the ratio of the area of ​​the element 550B(i,j) to the area of ​​the pixel 702B(i,j). Alternatively, it can improve the aperture ratio of the pixel 702G(i,j). As a result, it can provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0091] The functional panel 700 also has a conductive film G1(i), a conductive film G2(i), a conductive film S1g(j), a conductive film S2g(j), a conductive film ANO, and a conductive film VCOM2 (see FIG. 3).

[0092] For example, the conductive film G1(i) is supplied with a first selection signal, the conductive film G2(i) is supplied with a second selection signal, the conductive film S1g(j) is supplied with an image signal, and the conductive film S2g(j) is supplied with a control signal.

[0093] Configuration example 2 of a pair of pixels 703(i,j) The set of pixels 703(i,j) includes pixel 702G(i,j) (see FIG. 1B). Pixel 702G(i,j) includes pixel circuit 530G(i,j) and element 550G(i,j) (see FIG. 1C).

[0094] Configuration example 1 of pixel circuit 530G(i,j) The pixel circuit 530G(i,j) is supplied with a first selection signal, and the pixel circuit 530G(i,j) acquires an image signal based on the first selection signal. For example, the first selection signal can be supplied using the conductive film G1(i) (see FIG. 3). Alternatively, the image signal can be supplied using the conductive film S1g(j). Note that the operation of supplying the first selection signal and causing the pixel circuit 530G(i,j) to acquire the image signal can be referred to as "writing."

[0095] Configuration example 2 of pixel circuit 530G(i,j) The pixel circuit 530G(i,j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21, and a node N21 (see FIG. 3). The pixel circuit 530G(i,j) also includes a node N22, a capacitor C22, and a switch SW23.

[0096] The transistor M21 includes a gate electrode electrically connected to the node N21, a first electrode electrically connected to the element 550G(i,j), and a second electrode electrically connected to the conductive film ANO.

[0097] The switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1g(j), and a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film G1(i).

[0098] The switch SW22 has a first terminal electrically connected to the conductive film S2g(j) and has a function of controlling a conductive state or a non-conductive state based on the potential of the conductive film G2(i).

[0099] The capacitor C21 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second electrode of the switch SW22.

[0100] This allows an image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of light emitted by element 550G(i,j) can be controlled using the potential of node N21. As a result, a novel functional panel with excellent convenience and reliability can be provided.

[0101] Configuration example 1 of element 550G(i,j) The element 550G(i,j) is electrically connected to the pixel circuit 530G(i,j) (see FIGS. 2 and 3). The element 550G(i,j) also includes an electrode 551G(i,j) electrically connected to the pixel circuit 530G(i,j) and an electrode 552 electrically connected to the conductive film VCOM2 (see FIGS. 3 and 5(A)). The element 550G(i,j) has a function of operating based on the potential of the node N21.

[0102] Instead of a light-emitting diode, for example, an organic electroluminescence element, a QDLED (Quantum Dot LED), or the like can be used for element 550G(i,j).

[0103] <<Configuration Example 3 of a pair of pixels 703(i,j)>> A plurality of pixels can be used for one pixel set 703(i,j). For example, a plurality of pixels displaying colors with different hues can be used. Each of the plurality of pixels can be referred to as a sub-pixel. Alternatively, a plurality of sub-pixels can be referred to as a pixel.

[0104] This allows additive color mixing of colors displayed by the plurality of pixels, or allows display of colors of hues that cannot be displayed by individual pixels.

[0105] Specifically, a pixel 702B(i,j) that displays blue, a pixel 702G(i,j) that displays green, and a pixel 702R(i,j) that displays red can be used as one pixel 703(i,j). Each of the pixels 702B(i,j), 702G(i,j), and 702R(i,j) can be referred to as a subpixel (see FIG. 1(B)).

[0106] Also, for example, a pixel that displays white or the like can be used as pixel 703(i,j) in addition to the above set. Also, a pixel that displays cyan, a pixel that displays magenta, and a pixel that displays yellow can be used as one set of pixels 703(i,j).

[0107] Also, for example, a pixel that emits infrared light may be used for the set of pixels 703(i,j) in addition to the above set. Specifically, a pixel that emits light including light having a wavelength of 650 nm or more and 1000 nm or less may be used for the set of pixels 703(i,j).

[0108] <Configuration example 3 of function panel 700> The functional panel described in this embodiment mode includes a driver circuit GD (see FIG. 1A) and a driver circuit SD.

[0109] <<Example of the configuration of the driving circuit GD>> The driving circuit GD has a function of supplying a first selection signal and a second selection signal. For example, the driving circuit GD is electrically connected to the conductive film G1(i) and supplies a first selection signal, and is electrically connected to the conductive film G2(i) and supplies a second selection signal.

[0110] <<Example of the configuration of the drive circuit SD>> The drive circuit SD has a function of supplying an image signal and a control signal, and the control signal includes a first level and a second level. For example, the drive circuit SD is electrically connected to the conductive film S1g(j) and supplies an image signal, and is electrically connected to the conductive film S2g(j) and supplies a control signal.

[0111] <<Configuration Example 2 of Functional Layer 520>> The functional layer 520 includes a driving circuit GD (see FIG. 4 and FIG. 6A). The functional layer 520 includes, for example, a transistor MD used in the driving circuit GD.

[0112] <<Driver circuit GD configuration example 1>> The driver circuit GD includes a transistor MD. The transistor MD includes an oxide semiconductor film that contains an element contained in the oxide semiconductor film of the transistor M21.

[0113] For example, a semiconductor film having the same composition as that of the semiconductor film used in the transistor M21 can be used in the transistor MD.

[0114] This allows the semiconductor film of the transistor included in the driver circuit GD to be formed in the process of forming the semiconductor film of the transistor included in the pixel circuit 530G(i,j). Alternatively, the manufacturing process of the functional panel can be simplified. As a result, a novel functional panel with excellent convenience, usefulness, and reliability can be provided.

[0115] <<Example of transistor configuration>> A bottom-gate transistor or a top-gate transistor can be used for the functional layer 520. Specifically, the transistor can be used as a switch.

[0116] The transistor includes a semiconductor film 508, a conductive film 504, a conductive film 507A, and a conductive film 507B (see FIG. 5B).

[0117] The semiconductor film 508 includes a region 508A electrically connected to the conductive film 507A and a region 508B electrically connected to the conductive film 507B. The semiconductor film 508 includes a region 508C between the region 508A and the region 508B.

[0118] The conductive film 504 has a region overlapping with the region 508C, and has a function of a gate electrode.

[0119] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a gate insulating film.

[0120] The conductive film 507A has either a function of a source electrode or a function of a drain electrode, and the conductive film 507B has the other function of a source electrode or a function of a drain electrode.

[0121] The conductive film 524 can be used for a transistor. The conductive film 524 has a region where the semiconductor film 508 is sandwiched between the conductive film 524 and the conductive film 504. The conductive film 524 functions as a second gate electrode.

[0122] Note that a semiconductor film used for a transistor in a driver circuit can be formed in a process of forming a semiconductor film used for a transistor in a pixel circuit.

[0123] Configuration example 1 of semiconductor film 508 For example, a semiconductor containing a Group 14 element can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0124] [Hydrogenated amorphous silicon] For example, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a functional panel with less display unevenness than, for example, a functional panel using polysilicon for the semiconductor film 508. Alternatively, it is easy to increase the size of the functional panel.

[0125] [Polysilicon] For example, polysilicon can be used for the semiconductor film 508. This allows the field effect mobility of the transistor to be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the driving capability can be improved than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, the aperture ratio of a pixel can be improved than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508.

[0126] Alternatively, for example, the reliability of the transistor can be improved as compared to a transistor in which hydrogenated amorphous silicon is used for the semiconductor film 508 .

[0127] Alternatively, the temperature required to manufacture the transistor can be made lower than that of a transistor using single crystal silicon, for example.

[0128] Alternatively, a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit. Alternatively, the driver circuit can be formed over the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components included in an electronic device can be reduced.

[0129] Configuration example 2 of semiconductor film 508 For example, metal oxide can be used for the semiconductor film 508. This allows the pixel circuit to hold an image signal for a longer period of time compared to a pixel circuit using a transistor with amorphous silicon used for the semiconductor film. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, while suppressing the occurrence of flicker. As a result, the fatigue accumulated by the user of the information processing device can be reduced. Also, the power consumption associated with driving can be reduced.

[0130] Alternatively, for example, a functional panel with less display unevenness can be provided than a functional panel using polysilicon for the semiconductor film 508. Alternatively, the element 550G(i,j) can be driven with the duty ratio suppressed to, for example, 50% or less. Alternatively, for example, smart glasses or a head mounted display can be provided.

[0131] For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor including indium, an oxide semiconductor including indium, gallium, and zinc, or an oxide semiconductor including indium, gallium, zinc, and tin can be used for a semiconductor film.

[0132] For example, a transistor having a smaller leakage current in an off state than a transistor using amorphous silicon for a semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for a semiconductor film can be used as a switch or the like. This allows the potential of a floating node to be held for a longer time than a circuit using a transistor using amorphous silicon for a switch.

[0133] For example, a 25 nm thick film containing indium, gallium and zinc can be used for the semiconductor film 508 .

[0134] This makes it possible to suppress display flickering. Or, it makes it possible to reduce power consumption. Or, it makes it possible to display fast-moving videos smoothly. Or, it makes it possible to display photographs and the like with a rich range of gradations. As a result, it is possible to provide a novel functional panel that is excellent in convenience, usefulness, and reliability.

[0135] Configuration example 3 of semiconductor film 508 For example, a compound semiconductor can be used as the semiconductor of a transistor, specifically, a semiconductor containing gallium arsenide can be used.

[0136] For example, an organic semiconductor can be used as a semiconductor for a transistor. Specifically, an organic semiconductor containing polyacenes or graphene can be used as a semiconductor film.

[0137] <Capacity configuration example> The capacitor includes a first conductive film, a second conductive film, and an insulating film, the insulating film having a region sandwiched between the first conductive film and the second conductive film.

[0138] For example, a conductive film used for a source electrode or a drain electrode of a transistor, a conductive film used for a gate electrode, and an insulating film used for a gate insulating film can be used as a capacitor.

[0139] <<Configuration Example 2 of Functional Layer 520>> The functional layer 520 includes an insulating film 521, an insulating film 518, an insulating film 516, an insulating film 506, an insulating film 501C, and the like (see FIGS. 5(A) and 5(B)).

[0140] The insulating film 521 has a region that sandwiches the pixel circuit 530G(i,j) between itself and the element 550G(i,j).

[0141] The insulating film 518 has a region sandwiched between the insulating film 521 and the insulating film 501C.

[0142] The insulating film 516 has a region sandwiched between the insulating film 518 and the insulating film 501C.

[0143] The insulating film 506 has a region sandwiched between the insulating film 516 and the insulating film 501C.

[0144] [Insulating film 521] For example, the insulating film 521 can be made of an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material.

[0145] Specifically, the insulating film 521 can be formed using an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a laminated material formed by stacking a plurality of films selected from these.

[0146] For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or a film containing a laminated material selected from these can be used for the insulating film 521. Note that a silicon nitride film is a dense film and has an excellent function of suppressing diffusion of impurities.

[0147] For example, polyimide, polysiloxane, or a composite material of these with an inorganic material can be used for the insulating film 521. Polyimide has superior properties such as thermal stability, insulating properties, toughness, low dielectric constant, low coefficient of thermal expansion, and chemical resistance compared to other organic materials. For this reason, polyimide can be suitably used for the insulating film 521. However, one embodiment of the present invention is not limited thereto. The insulating film 521 may be made of an inorganic material such as silicon oxide, silicon nitride, or aluminum oxide. Using an inorganic material for the insulating film 521 can improve the reliability of the transistor M21.

[0148] Alternatively, a photosensitive material may be used to form the insulating film 521. Specifically, the insulating film 521 can be a film formed using a photosensitive polyimide, a photosensitive acrylic resin, or the like.

[0149] Thereby, the insulating film 521 can planarize steps resulting from various structures overlapping with the insulating film 521. The insulating film 521 may have a laminated structure of the inorganic material described above and an organic material having a planarization function, such as polyimide or a photosensitive acrylic resin.

[0150] [Insulating film 518] For example, the material that can be used for the insulating film 521 can be used for the insulating film 518.

[0151] For example, a material having a function of suppressing diffusion of oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, or the like can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 518. For example, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used for the insulating film 518. This can suppress diffusion of impurities into the semiconductor film of the transistor.

[0152] [Insulating film 516] For example, the material that can be used for the insulating film 521 can be used for the insulating film 516 .

[0153] Specifically, the insulating film 516 can be formed using a method different from that of the insulating film 518.

[0154] [Insulating film 506] For example, the material that can be used for the insulating film 521 can be used for the insulating film 506 .

[0155] Specifically, a film including a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used for the insulating film 506.

[0156] [Insulating film 501D] The insulating film 501D has a region sandwiched between the insulating film 501C and the insulating film 516.

[0157] For example, the material that can be used for the insulating film 506 can be used for the insulating film 501D.

[0158] [Insulating film 501C] For example, the insulating film 501C can be made of a material that can be used for the insulating film 521. Specifically, the insulating film 501C can be made of a material containing silicon and oxygen. This can suppress diffusion of impurities into the pixel circuits, the elements 550G(i,j), and the like.

[0159] <Configuration example 3 of functional layer 520> The functional layer 520 includes a conductive film, wiring, and terminals. A material having electrical conductivity can be used for the wiring, electrodes, terminals, conductive film, and the like.

[0160] [Wiring etc.] For example, inorganic conductive materials, organic conductive materials, metals, conductive ceramics, etc. can be used for wiring, etc.

[0161] Specifically, metal elements selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, and manganese can be used for wiring, etc. Alternatively, alloys containing the above-mentioned metal elements can be used for wiring, etc. In particular, an alloy of copper and manganese is suitable for microfabrication using a wet etching method.

[0162] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, and a three-layer structure in which a titanium film, an aluminum film is laminated on the titanium film, and a titanium film is further formed on top of that can be used for wiring, etc.

[0163] Specifically, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide doped with gallium can be used for wiring or the like.

[0164] Specifically, a film containing graphene or graphite can be used for wiring or the like.

[0165] For example, a film including graphene can be formed by forming a film including graphene oxide and reducing the film including graphene oxide. Examples of a reduction method include a method of applying heat and a method of using a reducing agent.

[0166] For example, a film containing metal nanowires can be used for wiring etc. Specifically, nanowires containing silver can be used.

[0167] Specifically, a conductive polymer can be used for wiring and the like.

[0168] For example, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 using a conductive material (see FIG. 4). Specifically, the terminal 519B can be electrically connected to the flexible printed circuit board FPC1 using a conductive material CP.

[0169] <Configuration example 4 of function panel 700> Moreover, the functional panel 700 includes a base material 510, a base material 770, and a sealing material 705 (see FIG. 5(A)). The functional panel 700 also includes a structure KB.

[0170] 《Base material 510, base material 770》 A material having optical transparency can be used for the substrate 510 or the substrate 770 .

[0171] For example, a flexible material can be used for the substrate 510 or the substrate 770. This makes it possible to provide a flexible functional panel.

[0172] For example, a material with a thickness of 0.7 mm or less and 0.1 mm or more can be used. Specifically, a material that has been polished to a thickness of about 0.1 mm can be used. This allows the weight to be reduced.

[0173] By the way, a glass substrate of 6th generation (1500 mm×1850 mm), 7th generation (1870 mm×2200 mm), 8th generation (2200 mm×2400 mm), 9th generation (2400 mm×2800 mm), 10th generation (2950 mm×3400 mm), etc. can be used for the base material 510 or the base material 770. This makes it possible to manufacture a large display device.

[0174] An organic material, an inorganic material, or a composite material such as an organic material and an inorganic material can be used for the substrate 510 or the substrate 770 .

[0175] For example, inorganic materials such as glass, ceramics, and metals can be used. Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically strengthened glass, quartz, sapphire, or the like can be used for the substrate 510 or substrate 770. Alternatively, aluminosilicate glass, tempered glass, chemically strengthened glass, sapphire, or the like can be suitably used for the substrate 510 or substrate 770 disposed on the side of the functional panel closer to the user. This can prevent the functional panel from being damaged or scratched during use.

[0176] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, etc. can be used. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, etc. can be used. Stainless steel, aluminum, etc. can be used for the substrate 510 or the substrate 770.

[0177] For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the base material 510 or the base material 770. This allows a semiconductor element to be formed on the base material 510 or the base material 770.

[0178] For example, organic materials such as resin, resin film, or plastic can be used for the substrate 510 or substrate 770. Specifically, materials containing polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or resin having a siloxane bond such as silicone can be used for the substrate 510 or substrate 770. For example, resin films, resin plates, laminated materials, etc. containing these materials can be used. This can reduce the weight. Or, for example, the frequency of occurrence of breakage due to dropping can be reduced.

[0179] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), cycloolefin polymer (COP), cycloolefin copolymer (COC), or the like can be used for the substrate 510 or substrate 770 .

[0180] For example, a composite material in which a metal plate, a thin glass plate, or a film of an inorganic material or the like is bonded to a resin film or the like can be used for the substrate 510 or the substrate 770. For example, a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin can be used for the substrate 510 or the substrate 770. For example, a composite material in which fibrous or particulate resin, organic material, or the like is dispersed in an inorganic material can be used for the substrate 510 or the substrate 770.

[0181] Furthermore, a single layer material or a material having multiple layers laminated thereon can be used for the substrate 510 or substrate 770. For example, a material having an insulating film or the like laminated thereon can be used. Specifically, a material having one or more films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like laminated thereon can be used. This can prevent, for example, the diffusion of impurities contained in the substrate. Alternatively, it can prevent the diffusion of impurities contained in glass or resin. Alternatively, it can prevent the diffusion of impurities that permeate the resin.

[0182] Also, paper or wood may be used for the substrate 510 or substrate 770 .

[0183] For example, a material having a heat resistance sufficient to withstand heat treatment during the manufacturing process can be used for the base material 510 or the base material 770. Specifically, a material having a heat resistance sufficient to withstand heat applied during a manufacturing process in which a transistor, a capacitor, or the like is directly formed can be used for the base material 510 or the base material 770.

[0184] For example, a method can be used in which an insulating film, a transistor, a capacitor, or the like is formed on a process substrate that has heat resistance to heat applied during the manufacturing process, and the formed insulating film, transistor, capacitor, or the like is transferred to, for example, the base material 510 or the base material 770. In this way, for example, an insulating film, a transistor, a capacitor, or the like can be formed on a substrate that has flexibility.

[0185] <Sealing material> The sealing material 705 has an area sandwiched between the functional layer 520 and the substrate 770, and has a function of bonding the functional layer 520 and the substrate 770 together (see FIG. 5(A)). The sealing material 505 also has an area sandwiched between the functional layer 520 and the substrate 510, and has a function of bonding the functional layer 520 and the substrate 510 together.

[0186] The sealant 705 and the sealant 505 can be made of an inorganic material, an organic material, or a composite material of an inorganic material and an organic material.

[0187] For example, the sealant 705 and the sealant 505 can be made of an organic material such as a heat-meltable resin or a curable resin.

[0188] For example, organic materials such as a reaction curing adhesive, a photocuring adhesive, a heat curing adhesive, and / or an anaerobic adhesive can be used for the sealant 705 and the sealant 505 .

[0189] Specifically, adhesives containing epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used for the sealing material 705 and the sealing material 505.

[0190] 《Structure KB》 The structural body KB has a region sandwiched between the functional layer 520 and the base material 770. In addition, the structural body KB has a function of providing a predetermined gap between the functional layer 520 and the base material 770.

[0191] <Method of manufacturing the functional panel 700> The method for producing the functional panel 700 includes, for example, the following 18 steps.

[0192] In a first step, an N-type cladding layer 553N is formed on, for example, a sapphire substrate.

[0193] In a second step, a light emitting layer 553EM is formed overlying the N-type cladding layer 553N.

[0194] In a third step, a P-type cladding layer 553P is formed overlying the light emitting layer 553EM.

[0195] In a fourth step, an electrode 551(i,j) is formed overlying the P-type cladding layer 553P.

[0196] In the fifth step, the electrode 551(i,j), the P-type cladding layer 553P, and the light-emitting layer 553EM are formed into a predetermined shape by etching.

[0197] In a sixth step, insulating film 501A is formed to cover electrodes 551(i,j).

[0198] In the seventh step, the insulating film 501A is formed into a predetermined shape by, for example, chemical polishing.

[0199] In an eighth step, an insulating film 501B is formed on the insulating film 501A.

[0200] In a ninth step, an insulating film 501C is formed on the insulating film 501B.

[0201] In a tenth step, the transistor M21 and the insulating film 516 are formed on the insulating film 501C.

[0202] In an eleventh step, openings including the opening 591G are formed using an etching method.

[0203] In a twelfth step, the transistor M21 and the electrode 551(i,j) are electrically connected.

[0204] In a thirteenth step, an insulating film 518 and an insulating film 521 are formed on the transistor M21.

[0205] In a fourteenth step, the base material 510 and the insulating film 521 are bonded together using a sealing material 505 .

[0206] In a fifteenth step, for example, the sapphire substrate is separated from the N-type cladding layer 553N. In the fifteenth step, for example, a laser lift-off method can be used.

[0207] In a sixteenth step, an electrode 552 is formed to overlap the N-type cladding layer 553N.

[0208] In the seventeenth step, the color conversion layer CC(G) is formed so as to sandwich the electrode 552 between the color conversion layer CC(G) and the light emitting layer 553EM.

[0209] In an eighteenth step, the base material 770 and the color conversion layer CC(G) are bonded together using a sealing material 705.

[0210] <Configuration example 5 of function panel 700> A functional panel 700 described in this embodiment has pixels 702G(i,j) (see FIG. 4(B) and FIG. 23(A)).

[0211] <<Configuration example 1 of pixel 702G(i,j)>> The pixel 702G(i,j) includes an element 550G(i,j), a color conversion layer CC(G), and a functional layer 520 (see FIG. 23(A)).

[0212] Configuration example 1 of element 550G(i,j) The element 550G(i,j) has the functional layer 520 sandwiched between it and the color conversion layer CC(G), the element 550G(i,j) has a function of emitting light, and the element 550G(i,j) includes gallium nitride.

[0213] For example, a light emitting diode can be used for the element 550G(i,j). Specifically, a vertical light emitting diode can be used for the element 550G(i,j). Also, a light emitting diode that emits blue light can be used for the element 550G(i,j). Note that the N-type cladding layer 553N has conductivity. This allows the N-type cladding layer 553N to electrically connect the element 550G(i,j) to an adjacent element, for example, the element 550B(i,j). In other words, the N-type cladding layer 553N also functions as an electrode.

[0214] <<Color conversion layer CC(G) configuration example 1>> The color conversion layer CC(G) has a function of converting the color of the light emitted by the element 550G(i,j) into a different color. For example, the light emitted by the element 550G(i,j) passes through the functional layer 520 and reaches the color conversion layer CC(G). For example, when the element 550G(i,j) emits blue light, the color conversion layer CC(G) can convert the blue light into, for example, green light. The color conversion layer CC(G) can be formed by using a photolithography method. Alternatively, for example, the structure KB can be formed by using a photolithography method, and the color conversion layer CC(G) can be formed by using an inkjet method in the area surrounded by the structure KB.

[0215] Configuration example 1 of functional layer 520 The functional layer 520 includes an insulating film 501 and a pixel circuit 530G(i,j).

[0216] The insulating film 501 has a region sandwiched between the pixel circuit 530G(i,j) and the element 550G(i,j), and the insulating film 501 has an opening 591G.

[0217] The pixel circuit 530G(i,j) includes a transistor M21, which includes an oxide semiconductor film. The transistor M21 is electrically connected to the element 550G(i,j) through an opening 591G. For example, a conductive film 512A electrically connects the transistor M21 and an electrode 551(i,j) (see FIG. 23(B)). The conductive film 512B electrically connects the transistor M21 and a conductive film ANO (see FIG. 3).

[0218] Note that a light-shielding layer may be provided between the element 550G(i,j) and the transistor M21. A material having a light-shielding property can be used for the conductive film 524. By providing the light-shielding layer, light emitted from the element 550G(i,j) can be prevented from being irradiated to the transistor M21.

[0219] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0220] (Embodiment 2) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS.

[0221] FIG. 16 is a block diagram of a function panel according to one embodiment of the present invention.

[0222] Fig. 17(A) is a diagram illustrating a configuration of a functional panel of one embodiment of the present invention, and is a cross-sectional view taken along the cutting lines X1-X2, X3-X4, and X9-X10 and a pair of pixels 703(i,j) in Fig. 16. Fig. 17(B) is a diagram illustrating a configuration of a functional panel of one embodiment of the present invention different from that shown in Fig. 17(A), and Fig. 17(C) is a diagram illustrating a configuration of a functional panel of one embodiment of the present invention different from that shown in Fig. 17(A) and Fig. 17(B).

[0223] Fig. 18(A) is a diagram illustrating a structure of a functional panel of one embodiment of the present invention and is a cross-sectional view of a pixel 702G(i,j) illustrated in Fig. 17(B). Fig. 18(B) is a cross-sectional view illustrating a part of Fig. 18(A), and Fig. 18(C) is a cross-sectional view illustrating another part of Fig. 18(A).

[0224] FIG. 19 is a block diagram of a function panel according to one embodiment of the present invention.

[0225] FIG. 20 is a diagram for explaining the configuration of a functional panel according to one embodiment of the present invention, and is a cross-sectional view taken along lines X1-X2, X3-X4, and X9-X10 in FIG. 19 and a pair of pixels 703(i,j).

[0226] <Configuration example 1 of function panel 700> Functional panel 700 described in this embodiment has functional layer 520B (see FIGS. 17(A) and 18(A)).

[0227] Configuration example 1 of functional layer 520B Functional layer 520B includes contact 519gb(j), a driving circuit SD, and insulating film 521C (see FIG. 18(A)). Contact 519gb(j) is electrically connected to the driving circuit SD.

[0228] Furthermore, the functional layer 520B includes an insulating film 521D. The insulating film 521D includes a region sandwiched between the driving circuit SD and the insulating film 521C. For example, a film containing silicon and nitrogen can be used for the insulating film 521D. This can suppress the diffusion of impurities into the driving circuit SD. Note that the impurities may cause operational malfunctions.

[0229] The driver circuit SD includes a transistor MD2, and the transistor MD2 includes a semiconductor containing an element of Group 14. For example, a transistor formed on a single crystal silicon substrate can be used as the transistor MD2.

[0230] The transistor MD2 includes a semiconductor film 108, a conductive film 104, a conductive film 112A, and a conductive film 112B (see FIG. 18C).

[0231] The semiconductor film 108 includes a region 108A electrically connected to the conductive film 112A and a region 108B electrically connected to the conductive film 112B. The semiconductor film 108 includes a region 108C between the region 108A and the region 108B.

[0232] The conductive film 104 has a region overlapping with the region 108C, and has a function of a gate electrode.

[0233] The insulating film 106 has a region sandwiched between the semiconductor film 108 and the conductive film 104. The insulating film 106 functions as a gate insulating film.

[0234] The conductive film 112A has either a function of a source electrode or a function of a drain electrode, and the conductive film 112B has the other function of a source electrode or a function of a drain electrode.

[0235] Configuration example 1 of functional layer 520 The functional layer 520 includes an insulating film 521B and contacts 519ga(j) (see FIG. 18(A)).

[0236] The insulating film 521B has a region sandwiched between the insulating film 521C and the insulating film 521. The insulating film 521B has a region bonded to the insulating film 521C.

[0237] For example, an insulating film containing silicon and oxygen can be used for the insulating film 521B and the insulating film 521C. This allows the insulating film 521B and the insulating film 521C to be bonded together by, for example, a surface activated bonding method. Alternatively, the functional layer 520 and the functional layer 520B can be bonded together.

[0238] Contact 519ga(j) is electrically connected to contact 519gb(j), and contact 519ga(j) is electrically connected to pixel circuit 530G(i,j).

[0239] For example, a metal may be used for contacts 519ga(j) and 519gb(j). Specifically, copper or gold may be used for contacts 519ga(j) and 519gb(j).

[0240] As a result, for example, the contact 519ga(j) and the contact 519gb(j) can be electrically connected using a surface activated bonding method. Alternatively, the conductive film S1g(j) can be electrically connected to the drive circuit SD. Alternatively, for example, a pixel signal can be supplied using the drive circuit SD. Alternatively, for example, a transistor using single crystal silicon as a semiconductor can be used for the drive circuit SD. Alternatively, for example, the drive circuit SD can be arranged overlapping the pixel 702G(i,j). Alternatively, the external shape of the functional panel can be reduced. Alternatively, the number of parts can be reduced. As a result, a novel functional panel that is excellent in convenience, usefulness, and reliability can be provided.

[0241] <Configuration example 2 of function panel 700> Another configuration of the functional panel according to one embodiment of the present invention will be described with reference to Fig. 17(B). Note that the configuration example 2 of the functional panel is different from the functional panel described with reference to Fig. 17(A) in that the functional layer 520B includes a driving circuit GD and that the functional layer 520B includes a terminal 519B. Here, the differences will be described in detail, and the above description will be used for parts where a similar configuration can be used.

[0242] For example, a transistor including a semiconductor containing a group 14 element can be used for the driver circuit GD. Specifically, a transistor using single crystal silicon can be used for the driver circuit GD. This allows the driver circuit GD to be made smaller. Alternatively, the outer shape of the functional panel can be made smaller.

[0243] <Configuration example 3 of function panel 700> Another configuration of the functional panel according to an embodiment of the present invention will be described with reference to Fig. 17(C). Note that the configuration example 3 of the functional panel is different from the functional panel described with reference to Fig. 17(A) in that the functional layer 520B includes the driving circuit GD and in the position of the terminal 519B.

[0244] <Configuration example 4 of function panel 700> Another configuration of the functional panel according to an embodiment of the present invention will be described with reference to FIGS.

[0245] Note that configuration example 4 of the functional panel differs from the functional panel described with reference to Figure 17(A) in that functional layer 520 has a driving circuit DX, functional layer 520B has a driving circuit DY, and element 550B(i,j) is passively driven.

[0246] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0247] (Embodiment 3) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS. 5A and 5B. FIG.

[0248] <Configuration example 1 of function panel 700> Functional panel 700 has a set of pixels 703(i,j), which includes pixel 702G(i,j) and pixel 702B(i,j) (see FIG. 1(B)).

[0249] Configuration example 1 of pixel 702B(i,j) Pixel 702B(i,j) has a function of displaying light emitted by element 550B(i,j), and element 550B(i,j) has a function of emitting light of the same color as the color of light emitted by element 550G(i,j). For example, element 550B(i,j) and element 550G(i,j) have a function of emitting blue light.

[0250] <<Configuration example 2 of pixel 702G(i,j)>> The pixel 702G(i,j) includes a color conversion layer CC(G) that converts the color of the light emitted by the element 550G(i,j) into a different color.

[0251] This allows element 550B(i,j) to be formed in the same process as element 550G(i,j). Alternatively, pixel 702G(i,j) can be used to display a color different from that of pixel 702B(i,j). As a result, a novel functional panel with excellent convenience, usability, and reliability can be provided.

[0252] Configuration example 1 of element 550G(i,j) The element 550G(i,j) includes an electrode 551G(i,j), an electrode 552, and a layer 553 containing a light-emitting material (see FIG. 5A). The layer 553 containing a light-emitting material includes a region sandwiched between the electrode 551G(i,j) and the electrode 552.

[0253] For example, a mini LED can be used for element 550G(i,j). Specifically, the area of ​​the light emitting region can be 1 mm 2 Less than 50,000 μm, preferably 2 Less than or equal to 30,000 μm, more preferably 30,000 μm 2 Less than 10000 μm, more preferably 10000 μm 2 Below, 200μm 2 The above mini LEDs can be used for element 550G(i,j).

[0254] Alternatively, a micro LED can be used for the element 550G(i,j). Specifically, the area of ​​the light emitting region is 200 μm 2Less than 60 μm, preferably 2 Less than or equal to 15 μm, more preferably 2 Less than 5 μm, more preferably 2 Below, 3μm 2 The above micro LED can be used for element 550G(i,j).

[0255] [Configuration example 1 of the layer 553 containing a light-emitting material] The layer 553 containing a light-emitting material includes, for example, a P-type cladding layer 553P, an N-type cladding layer 553N, and a light-emitting layer 553EM. The light-emitting layer 553EM includes a region sandwiched between the P-type cladding layer 553P and the N-type cladding layer 553N. This allows carriers to be recombined in the light-emitting layer 553EM. As a result, light emission accompanying the recombination of carriers can be obtained.

[0256] For example, a laminate material laminated so as to emit blue light, a laminate material laminated so as to emit green light, or a laminate material laminated so as to emit red light can be used for the pixel. Specifically, a gallium phosphide compound, a gallium arsenide compound, a gallium aluminum arsenide compound, an aluminum gallium indium phosphide compound, an indium gallium nitride compound, etc. can be used for the pixel.

[0257] In particular, an element that emits blue light can be used for element 550G(i,j) and element 550B(i,j), which allows element 550G(i,j) and element 550B(i,j) to be formed in the same process.

[0258] Also, an element that emits ultraviolet light can be used for element 550G(i,j) and element 550B(i,j). Note that a color conversion layer can be disposed so as to overlap element 550B(i,j) to convert the ultraviolet light into blue light.

[0259] Color conversion layer The color conversion layer comprises a region sandwiched between substrate 770 and element 550G(i,j).

[0260] For example, a material that emits light having a wavelength longer than the wavelength of the incident light can be used for the color conversion layer. For example, a material that absorbs blue light or ultraviolet light and converts it to green light and emits it, a material that absorbs blue light or ultraviolet light and converts it to red light and emits it, or a material that absorbs ultraviolet light and converts it to blue light and emits it can be used for the color conversion layer. For example, a phosphor can be used for the color conversion layer. Specifically, quantum dots with a diameter of several nm can be used for the color conversion layer. This allows light to be emitted with a spectrum with a narrow half-width. Or, light with high saturation can be emitted.

[0261] <Configuration example 2 of function panel 700> The functional panel 700 includes a functional film 770P and the like (see FIG. 5(A)).

[0262] 《Functional membrane 770P, etc.》 The functional film 770P has an area that overlaps with the element 550G(i,j).

[0263] For example, an anti-reflection film, a polarizing film, a retardation film, a light diffusing film, a light collecting film, or the like can be used for the functional film 770P.

[0264] For example, an anti-reflection film having a thickness of 1 μm or less can be used for the functional film 770P. Specifically, a laminated film having three or more dielectric layers, preferably five or more dielectric layers, more preferably fifteen or more dielectric layers can be used for the functional film 770P. This makes it possible to suppress the reflectance to 0.5% or less, preferably 0.08% or less.

[0265] For example, a circularly polarizing film can be used for the functional film 770P.

[0266] In addition, the functional film 770P can be used with antistatic films that prevent dust from sticking, water-repellent films that make it difficult for dirt to adhere, oil-repellent films that make it difficult for dirt to adhere, anti-reflection films, non-glossy films (anti-glare films), hard coat films that prevent scratches from occurring during use, and self-repairing films that repair any scratches that do occur.

[0267] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0268] (Embodiment 4) In this embodiment, a structure of a functional panel according to one embodiment of the present invention will be described with reference to FIGS.

[0269] FIG. 7 is a block diagram illustrating the configuration of a functional panel according to an embodiment of the present invention.

[0270] <Configuration example 1 of function panel 700> The functional panel 700 described in this embodiment has an area 231 (see FIG. 7).

[0271] <<Configuration Example 1 of Area 231>> The region 231 includes a group of pixels 703(i,1) to 703(i,n) and another group of pixels 703(1,j) to 703(m,j). The region 231 includes a conductive film G1(i) and a conductive film S1g(j).

[0272] A group of a set of pixels 703(i,1) to a set of pixels 703(i,n) are arranged in the row direction (the direction indicated by arrow R1 in the figure), and a group of a set of pixels 703(i,1) to a set of pixels 703(i,n) includes a set of pixels 703(i,j).

[0273] In addition, a set of pixels 703(i,1) to 703(i,n) in a group are electrically connected to a conductive film G1(i). In addition, a set of pixels 703(i,1) to 703(i,n) in a group are electrically connected to a conductive film G2(i).

[0274] Another group of a set of pixels 703(1,j) through a set of pixels 703(m,j) are arranged in a column direction (the direction indicated by the arrow C1 in the figure) that intersects the row direction, and the other group of a set of pixels 703(1,j) through a set of pixels 703(m,j) includes a set of pixels 703(i,j).

[0275] Another group of a set of pixels 703(1,j) through 703(m,j) is electrically connected to the conductive film S1g(j). Another group of a set of pixels 703(1,j) through 703(m,j) is electrically connected to the conductive film S2g(j).

[0276] This makes it possible to supply image information to a plurality of pixels, or to obtain imaging information from a plurality of pixels, thereby providing a novel functional panel that is highly convenient, useful, and reliable.

[0277] <<Configuration Example 2 of Area 231>> Region 231 has a plurality of sets of pixels, for example, 600 or more per inch. The plurality of sets of pixels includes set of pixels 703(i,j). Preferably, region 231 has a plurality of sets of pixels, for example, 1000 or more per inch, more preferably 3000 or more per inch, and even more preferably 6000 or more per inch. This can reduce, for example, the screen door effect.

[0278] <<Configuration Example 3 of Area 231>> Region 231 includes a plurality of pixel sets arranged in a matrix. For example, region 231 includes 7600 or more pixel sets in the row direction, and region 231 includes 4300 or more pixel sets in the column direction. Specifically, region 231 includes 7680 pixel sets in the row direction, and 4320 pixel sets in the column direction.

[0279] This makes it possible to display a high-definition image, thereby providing a novel functional panel that is highly convenient and reliable.

[0280] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0281] (Embodiment 5) In this embodiment, a structure of a display device according to one embodiment of the present invention will be described with reference to FIG.

[0282] FIG. 8A is a block diagram of a display device of one embodiment of the present invention, and FIGS. 8B to 8D are perspective views illustrating the appearance of the display device of one embodiment of the present invention.

[0283] <Example of display device configuration> The display device described in this embodiment includes a control unit 238 and a functional panel 700 (see FIG. 8(A)).

[0284] Configuration example 1 of the control unit 238 The control unit 238 is supplied with image information VI and control information CI, which may be, for example, a clock signal or a timing signal.

[0285] The control unit 238 generates information based on the image information VI, and generates a control signal based on the control information CI, and also provides the information and the control signal.

[0286] For example, the information includes a gradation of 8 bits or more, preferably 12 bits or more. Also, for example, a clock signal or a start pulse of a shift register used in a driving circuit can be used as a control signal.

[0287] <<Configuration Example 2 of the Control Unit 238>> For example, the decompression circuit 234 and the image processing circuit 235 can be used in the control unit 238 .

[0288] 《Extension circuit 234》 The decompression circuit 234 has a function of decompressing the image information VI that is supplied in a compressed state. The decompression circuit 234 has a storage unit. The storage unit has a function of storing, for example, the decompressed image information.

[0289] "Image processing circuit 235" The image processing circuit 235 includes, for example, a storage area. The storage area has a function of storing information included in the image information VI, for example.

[0290] The image processing circuit 235 has, for example, a function of correcting the image information VI based on a predetermined characteristic curve to generate information, and a function of supplying the information.

[0291] <<Configuration example 1 of function panel 700>> Information and control signals are supplied to the functional panel 700. For example, the functional panel 700 described in any one of the first to fourth embodiments can be used.

[0292] <<Configuration Example 3 of Pixel 703(i,j)>> Pixel 703(i,j) is displayed based on the information.

[0293] This allows the image information VI to be displayed using the element 550G(i,j). As a result, a novel display device with excellent convenience, usefulness, or reliability can be provided. Alternatively, for example, an information device terminal (see FIG. 8(B)), a video display system (see FIG. 8(C)), or a computer (see FIG. 8(D)) can be provided.

[0294] <<Configuration example 2 of function panel 700>> For example, the functional panel 700 includes a driving circuit and a control circuit.

[0295] <Drive circuit> The drive circuits operate based on control signals, and the operation of multiple drive circuits can be synchronized by using the control signals (see FIG. 8(A)).

[0296] For example, the driving circuit GD can be used in the functional panel 700. The driving circuit GD is supplied with a control signal and has a function of supplying a first selection signal.

[0297] Also, for example, the driving circuit SD can be used in the functional panel 700. The driving circuit SD is supplied with control signals and information and can supply image signals.

[0298] Control circuit The control circuit has a function of generating and supplying a control signal, which may be, for example, a clock signal or a timing signal.

[0299] Specifically, a control circuit formed on a rigid substrate can be used for the functional panel, or the control circuit formed on the rigid substrate can be electrically connected to the control unit 238 using a flexible printed circuit board.

[0300] For example, the timing controller 233 can be used for the control circuit.

[0301] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0302] (Embodiment 6) In this embodiment, a configuration of an input / output device of one embodiment of the present invention will be described with reference to FIG.

[0303] FIG. 9 is a block diagram illustrating a configuration of an input / output device of one embodiment of the present invention.

[0304] <Example 1 of I / O device configuration> The input / output device described in this embodiment includes an input unit 240 and a display unit 230 (see FIG. 9).

[0305] Configuration example 1 of display unit 230 The display unit 230 includes a functional panel 700. For example, the functional panel 700 described in any one of the first to fourth embodiments can be used for the display unit 230. Note that a configuration having the input unit 240 and the display unit 230 can be referred to as a functional panel 700TP.

[0306] Configuration example 1 of the input unit 240 The input unit 240 has a detection area 241. The input unit 240 detects an object approaching the detection area 241.

[0307] Sensing region 241 comprises the area that overlaps a set of pixels 703(i,j).

[0308] This makes it possible to detect an object approaching an area overlapping with the display unit 230 while displaying image information using the display unit 230. Alternatively, position information can be input using a finger or the like brought close to the display unit 230 as a pointer. Alternatively, position information can be associated with image information displayed on the display unit 230. As a result, it is possible to provide a novel input / output device that is highly convenient, useful, and reliable.

[0309] Configuration example 1 of detection area 241 The sensing area 241 may, for example, include one or more detectors.

[0310] The detection region 241 has a group of detectors 802(g,1) through 802(g,q) and another group of detectors 802(1,h) through 802(p,h), where g is an integer between 1 and p, h is an integer between 1 and q, and p and q are integers greater than or equal to 1.

[0311] A group of detectors 802(g,1) to 802(g,q) including a detector 802(g,h) are arranged in the row direction (the direction indicated by the arrow R2 in the figure) and are electrically connected to the wiring CL(g). Note that the direction indicated by the arrow R2 may be the same as the direction indicated by the arrow R1, or may be different.

[0312] In addition, another group of detectors 802(1,h) to 802(p,h), including detector 802(g,h), are arranged in a column direction (the direction indicated by arrow C2 in the figure) that intersects with the row direction, and are electrically connected to wiring ML(h).

[0313] Detector The detector has a function of detecting a nearby pointer. For example, a finger or a stylus pen can be used as the pointer. For example, a metal piece or a coil can be used as the stylus pen.

[0314] Specifically, a capacitance type proximity sensor, an electromagnetic induction type proximity sensor, an optical type proximity sensor, a resistive film type proximity sensor, or the like can be used as the detector.

[0315] Furthermore, detectors of multiple types can be used in combination. For example, a detector for detecting a finger and a detector for detecting a stylus pen can be used in combination.

[0316] This makes it possible to determine the type of pointer. Alternatively, different commands can be associated with the detection information based on the determined type of pointer. Specifically, if it is determined that a finger is used as the pointer, the detection information can be associated with a gesture. Alternatively, if it is determined that a stylus pen is used as the pointer, the detection information can be associated with a drawing process.

[0317] Specifically, a finger can be detected using a capacitance type, a pressure sensitive type, or an optical type proximity sensor, or a stylus pen can be detected using an electromagnetic induction type or an optical type proximity sensor.

[0318] Configuration example 2 of input unit 240 The input section 240 comprises an oscillator circuit OSC and a detection circuit DC (see FIG. 9).

[0319] The oscillator circuit OSC supplies a search signal to the detector 802(g,h). For example, a square wave, a sawtooth wave, a triangular wave, a sine wave, etc. can be used as the search signal.

[0320] The detector 802(g,h) generates and provides a detection signal that varies based on the distance to the pointer proximate to the detector 802(g,h) and the probe signal.

[0321] The detection circuit DC provides input information based on the detection signal.

[0322] This makes it possible to detect the distance from the approaching pointer to the detection area 241. Alternatively, it makes it possible to detect the position within the detection area 241 to which the pointer is closest.

[0323] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0324] (Embodiment 7) In this embodiment, a structure of a data processing device of one embodiment of the present invention will be described with reference to FIGS.

[0325] Fig. 10A is a block diagram illustrating a configuration of an information processing device of one embodiment of the present invention, Fig. 10B and Fig. 10C are projection views illustrating an example of the external appearance of the information processing device.

[0326] Fig. 11 is a flowchart for explaining a program according to an embodiment of the present invention, Fig. 11(A) is a flowchart for explaining main processing of the program according to an embodiment of the present invention, and Fig. 11(B) is a flowchart for explaining interrupt processing.

[0327] 12A and 12B are diagrams illustrating a program according to one embodiment of the present invention. Fig. 12A is a flowchart illustrating interrupt processing of a program according to one embodiment of the present invention. Fig. 12B is a schematic diagram illustrating the operation of an information processing device, and Fig. 12C is a timing chart illustrating the operation of the information processing device according to one embodiment of the present invention.

[0328] <Configuration example 1 of information processing device> The information processing device described in this embodiment includes an arithmetic device 210 and an input / output device 220 (see FIG. 10(A)). The input / output device 220 is electrically connected to the arithmetic device 210. The information processing device 200 may include a housing (see FIGS. 10(B) and 10(C)).

[0329] Configuration Example 1 of the Calculation Device 210 The arithmetic unit 210 is supplied with input information II or sensed information DS. The arithmetic unit 210 generates control information CI and image information VI based on the input information II or sensed information DS, and supplies the control information CI and image information VI.

[0330] The arithmetic device 210 includes a calculation unit 211 and a storage unit 212. The arithmetic device 210 also includes a transmission path 214 and an input / output interface 215.

[0331] The transmission path 214 is electrically connected to the calculation unit 211 , the storage unit 212 , and the input / output interface 215 .

[0332] 《Arithmetic section 211》 The calculation unit 211 has a function of executing a program, for example.

[0333] 《Storage section 212》 The storage unit 212 has a function of storing, for example, the program executed by the calculation unit 211, initial information, setting information, images, and the like.

[0334] Specifically, a hard disk, a flash memory, a memory including a transistor including an oxide semiconductor, or the like can be used.

[0335] Input / output interface 215, transmission path 214 The input / output interface 215 includes a terminal or wiring and has a function of supplying information and receiving information. For example, the input / output interface 215 can be electrically connected to the transmission path 214. The input / output interface 215 can also be electrically connected to the input / output device 220.

[0336] The transmission path 214 includes wiring and has a function of supplying information and receiving information. For example, the transmission path 214 can be electrically connected to the input / output interface 215. The transmission path 214 can also be electrically connected to the calculation unit 211, the storage unit 212, or the input / output interface 215.

[0337] Example of the configuration of the input / output device 220 The input / output device 220 supplies input information II and sensed information DS. The input / output device 220 is supplied with control information CI and image information VI (see FIG. 10(A)).

[0338] For example, keyboard scan code, position information, button operation information, audio information, image information, etc. can be used as the input information II. Alternatively, for example, illuminance information, posture information, acceleration information, direction information, pressure information, temperature information, humidity information, etc. of the environment in which the information processing device 200 is used can be used as the detection information DS.

[0339] For example, a signal for controlling the luminance, saturation, or hue of the image information VI may be used as the control information CI, or a signal for changing the display of a part of the image information VI may be used as the control information CI.

[0340] The input / output device 220 includes a display unit 230, an input unit 240, and a detection unit 250. For example, the input / output device described in the sixth embodiment can be used for the input / output device 220. The input / output device 220 can also include a communication unit 290.

[0341] Configuration example of display unit 230 The display unit 230 displays the image information VI based on the control information CI. For example, the display device described in the fifth embodiment can be used for the display unit 230.

[0342] Example of configuration of input unit 240 The input unit 240 generates input information II. For example, the input unit 240 has a function of supplying position information.

[0343] For example, a human interface or the like can be used for the input unit 240 (see FIG. 10(A)). Specifically, a keyboard, a mouse, a touch sensor, a microphone, a camera, or the like can be used for the input unit 240.

[0344] It is also possible to use a touch sensor having an area overlapping with the display unit 230. Note that an input / output device including the display unit 230 and a touch sensor having an area overlapping with the display unit 230 can be called a touch panel or a touch screen.

[0345] For example, a user can perform various gestures (such as tapping, dragging, swiping, or pinching in) using a finger that touches the touch panel as a pointer.

[0346] For example, the computing device 210 can analyze information such as the position or trajectory of a finger touching the touch panel, and when the analysis result satisfies a predetermined condition, it can determine that a predetermined gesture has been provided. This allows the user to provide a predetermined operation command that is previously associated with a predetermined gesture by using the gesture.

[0347] As one example, a user can provide a "scroll command" to change the displayed position of image information by using a gesture of moving a finger in contact with the touch panel along the touch panel.

[0348] The user can also provide a "drag command" to pull out and display the navigation panel NP at the edge of the area 231 by using a gesture of moving a finger in contact with the edge of the area 231 (see FIG. 10(C)). The user can also provide a "leaf-through command" to flip through the index image IND, parts of other pages, or thumbnail images TN of other pages in a predetermined order on the navigation panel NP by using a gesture of moving the position where the finger is pressed firmly, or by using the pressure of the finger. This makes it possible to turn the pages of an e-book terminal in the same way as flipping through the pages of a paper book. Or, the user can use the thumbnail image TN or index image IND to find a predetermined page.

[0349] Example of configuration of detection unit 250 The detection unit 250 generates detection information DS. For example, the detection unit 250 has a function of detecting the illuminance of the environment in which the information processing device 200 is used, and a function of supplying the illuminance information.

[0350] The detection unit 250 has a function of detecting the surrounding state and supplying detection information, specifically, illuminance information, attitude information, acceleration information, direction information, pressure information, temperature information, humidity information, and the like.

[0351] For example, the detection unit 250 may use a photodetector, a posture detector, an acceleration sensor, a direction sensor, a GPS (Global Positioning System) signal receiving circuit, a pressure-sensitive switch, a pressure sensor, a temperature sensor, a humidity sensor, a camera, or the like.

[0352] 《Communication Section 290》 The communication unit 290 has a function of supplying information to the network and acquiring information from the network.

[0353] 《Case》 The housing has a function of housing the input / output device 220 or the arithmetic device 210. Alternatively, the housing has a function of supporting the display unit 230 or the arithmetic device 210.

[0354] This makes it possible to generate control information CI based on input information II or detection information DS. Or, it is possible to display image information VI based on input information II or detection information DS. Or, it is possible for the information processing device to operate by grasping the intensity of light received by the housing of the information processing device in the environment in which the information processing device is used. Or, it is possible for the user of the information processing device to select the display method. As a result, it is possible to provide a novel information processing device that is excellent in convenience, usefulness, and reliability.

[0355] In addition, these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration. For example, a touch panel in which a touch sensor is superimposed on a display panel is both a display unit and an input unit.

[0356] Configuration Example 2 of the Calculation Device 210 The arithmetic device 210 includes an artificial intelligence unit 213 (see FIG. 10(A)).

[0357] The artificial intelligence unit 213 is supplied with the input information II or the sensed information DS, and infers the control information CI based on the input information II or the sensed information DS. The artificial intelligence unit 213 also supplies the control information CI.

[0358] This makes it possible to generate control information CI that is displayed in a way that is perceived as suitable. Or, it is possible to display control information CI that is displayed in a way that is perceived as suitable. Or, it is possible to generate control information CI that is displayed in a way that is perceived as comfortable. Or, it is possible to display control information CI that is displayed in a way that is perceived as comfortable. As a result, it is possible to provide a novel information processing device that is excellent in convenience, usefulness, and reliability.

[0359] [Natural language processing for input information II] Specifically, the artificial intelligence unit 213 can perform natural language processing on the input information II and extract one feature from the entire input information II. For example, the artificial intelligence unit 213 can infer emotions and the like contained in the input information II and make them a feature. It can also infer a color, pattern, font, and the like that is empirically felt to be suitable for the feature. The artificial intelligence unit 213 can also generate information that specifies the color, pattern, or font of characters, and information that specifies the color or pattern of the background, and use the information in the control information CI.

[0360] Specifically, the artificial intelligence unit 213 can extract some words contained in the input information II by natural language processing of the input information II. For example, the artificial intelligence unit 213 can extract grammatical errors, factual errors, or expressions containing emotions. In addition, the artificial intelligence unit 213 can generate information that displays the extracted part in a color, pattern, font, or the like that is different from the other parts, and use the information as the control information CI.

[0361] [Image processing for input information II] Specifically, the artificial intelligence unit 213 can perform image processing on the input information II and extract one feature from the input information II. For example, the artificial intelligence unit 213 can infer the year in which the input information II was photographed, whether indoors or outdoors, day or night, and the like, and use these as features. In addition, the artificial intelligence unit 213 can infer a color tone that is empirically felt to be suitable for the feature, and generate control information CI for using the color tone for display. Specifically, information specifying a color (for example, full color, black and white, or brown, etc.) used to express shading can be used in the control information CI.

[0362] Specifically, the artificial intelligence unit 213 can extract a part of an image included in the input information II by performing image processing on the input information II. For example, the artificial intelligence unit 213 can generate control information CI that displays a boundary between one part of the extracted image and another part. Specifically, the artificial intelligence unit 213 can generate control information CI that displays a rectangle that surrounds a part of the extracted image.

[0363] [Inference using detection information DS] Specifically, the artificial intelligence unit 213 can generate an inference using the detection information DS, or can generate control information CI based on the inference so that the user of the information processing device 200 feels comfortable.

[0364] Specifically, the artificial intelligence unit 213 can generate control information CI for adjusting the brightness of the display so that the brightness of the display is felt to be comfortable based on the illuminance of the environment, etc. Alternatively, the artificial intelligence unit 213 can generate control information CI for adjusting the volume so that the volume is felt to be comfortable based on the noise of the environment, etc.

[0365] Note that a clock signal or a timing signal supplied to the control unit 238 included in the display unit 230 can be used as the control information CI. Alternatively, a clock signal or a timing signal supplied to the control unit included in the input unit 240 can be used as the control information CI.

[0366] <Configuration example 2 of information processing device> Another configuration of the data processing device of one embodiment of the present invention will be described with reference to FIGS.

[0367] "program" A program according to one embodiment of the present invention has the following steps (see FIG. 11(A)).

[0368] [First step] In the first step, the settings are initialized (see FIG. 11(A)(S1)).

[0369] For example, predetermined image information to be displayed at the time of startup, a predetermined mode for displaying the image information, and information for specifying a predetermined display method for displaying the image information are obtained from the storage unit 212. Specifically, one still image information or other moving image information can be used as the predetermined image information. Also, the first mode or the second mode can be used as the predetermined mode.

[0370] [Second step] In the second step, interrupt processing is permitted (see FIG. 11(A)(S2)). Note that the arithmetic unit for which interrupt processing is permitted can perform the interrupt processing in parallel with the main processing. The arithmetic unit that has returned from the interrupt processing to the main processing can reflect the results obtained from the interrupt processing in the main processing.

[0371] When the counter value is the initial value, the arithmetic unit may perform an interrupt process, and when returning from the interrupt process, the counter may be set to a value other than the initial value. This allows interrupt processing to be always performed after the program is started.

[0372] [Third step] In a third step, the image information is displayed using a predetermined mode or a predetermined display method selected in the first step or interrupt process (see FIG. 11(A)(S3)). Note that the predetermined mode specifies the mode in which the information is displayed, and the predetermined display method specifies the method in which the information is displayed. Also, for example, it can be used for information that displays image information VI.

[0373] For example, one way of displaying the image information VI may be associated with a first mode, and another way of displaying the image information VI may be associated with a second mode, allowing the display method to be selected based on the selected mode.

[0374] First mode Specifically, a method of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, and performing display based on the selection signal can be associated with the first mode.

[0375] For example, if the selection signal is supplied at a frequency of 30 Hz or more, and preferably 60 Hz or more, the movement of the moving image can be displayed smoothly.

[0376] For example, by updating the image at a frequency of 30 Hz or more, preferably 60 Hz or more, an image that changes so as to smoothly follow the user's operation can be displayed on the information processing device 200 being operated by the user.

[0377] Second Mode Specifically, a method of supplying a selection signal to one scan line at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, and performing display based on the selection signal can be associated with the second mode.

[0378] Supplying the selection signal at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute can provide a display with reduced flicker or blinking, and can also reduce power consumption.

[0379] For example, when the information processing device 200 is used in a clock, the display can be updated once per second or once per minute.

[0380] [Fourth step] In the fourth step, if an end command is supplied, the process proceeds to the fifth step, and if an end command is not supplied, the process proceeds to the third step (see FIG. 11(A)(S4)).

[0381] For example, the end command supplied in the interrupt process may be used for the judgment.

[0382] [5th ​​step] In the fifth step, the process ends (see FIG. 11(A)(S5)).

[0383] <<Interrupt Processing>> The interrupt process includes the following sixth to eighth steps (see FIG. 11(B)).

[0384] [Sixth step] In a sixth step, for example, the detection unit 250 detects the illuminance of the environment in which the information processing device 200 is used (see FIG. 11(B)(S6)). Note that instead of the illuminance of the environment, the color temperature or chromaticity of the ambient light may be detected.

[0385] [Seventh step] In the seventh step, a display method is determined based on the detected illuminance information (see FIG. 11(B)(S7)). For example, the brightness of the display is determined so as not to be too dark or too bright.

[0386] It should be noted that if the color temperature or chromaticity of the ambient light is detected in the sixth step, the color of the display may be adjusted.

[0387] [8th step] In the eighth step, the interrupt process ends (see FIG. 11(B) (S8)).

[0388] <Configuration example 3 of information processing device> Another configuration of the data processing device of one embodiment of the present invention will be described with reference to FIG.

[0389] Fig. 12A is a flowchart illustrating a program according to one embodiment of the present invention, which illustrates an interrupt process different from the interrupt process illustrated in Fig. 11B.

[0390] Note that the configuration example 3 of the information processing device differs from the interrupt processing described with reference to Fig. 11(B) in that the interrupt processing includes a step of changing the mode based on a given event that is supplied. Here, the different parts will be described in detail, and the above description will be used for parts where a similar configuration can be used.

[0391] <<Interrupt Processing>> The interrupt process includes the following sixth to eighth steps (see FIG. 12(A)).

[0392] [Sixth step] In the sixth step, if a predetermined event is supplied, the process proceeds to the seventh step, and if the predetermined event is not supplied, the process proceeds to the eighth step (see FIG. 12(A)(U6)). For example, whether or not a predetermined event is supplied within a predetermined period of time can be used as a condition. Specifically, the predetermined period can be a period of 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less, but longer than 0 seconds.

[0393] [Seventh step] In the seventh step, the mode is changed (see FIG. 12(A)(U7)). Specifically, if the first mode has been selected, the second mode is selected, and if the second mode has been selected, the first mode is selected.

[0394] For example, it is possible to change the display mode for a part of the region of the display unit 230. Specifically, it is possible to change the display mode for a region to which a selection signal is supplied by one of the drive circuits of the display unit 230 including the drive circuits GDA, GDB, and GDC (see FIG. 12(B)).

[0395] For example, when a predetermined event is supplied to the input unit 240 in an area overlapping with an area to which the drive circuit GDB supplies a selection signal, the display mode of the area to which the drive circuit GDB supplies a selection signal can be changed (see Figs. 12(B) and 12(C)). Specifically, the frequency of the selection signal supplied by the drive circuit GDB can be changed in response to a "tap" event supplied to the touch panel using a finger or the like.

[0396] The signal GCLK is a clock signal that controls the operation of the drive circuit GDB, and the signals PWC1 and PWC2 are pulse width control signals that control the operation of the drive circuit GDB. The drive circuit GDB supplies selection signals to the conductive films G2(m+1) to G2(2m) based on the signals GCLK, PWC1, and PWC2.

[0397] This allows, for example, the driver circuit GDB to supply a selection signal without the driver circuit GDA and the driver circuit GDC supplying a selection signal. Alternatively, the display of the area to which the driver circuit GDB supplies a selection signal can be updated without changing the display of the area to which the driver circuit GDA and the driver circuit GDC supply a selection signal. Alternatively, the power consumed by the driver circuit can be reduced.

[0398] [8th step] In the eighth step, the interrupt process is ended (see FIG. 12(A)(U8)). Note that the interrupt process may be repeatedly executed during the execution of the main process.

[0399] 《Specified Event》 For example, events such as "click" and "drag" provided using a pointing device such as a mouse, and events such as "tap," "drag," or "swipe" provided to a touch panel using a finger or the like as a pointer can be used.

[0400] Also, for example, the position of the slide bar pointed to by the pointer, the swipe speed, the drag speed, etc. can be used to provide arguments for commands associated with a given event.

[0401] For example, the information detected by the detection unit 250 can be compared with a preset threshold value, and the comparison result can be used for the event.

[0402] Specifically, a pressure-sensitive detector that comes into contact with a button or the like that is arranged so that it can be pressed into the housing can be used for the detection unit 250 .

[0403] Commands associated with specific events For example, the termination command may be associated with a certain event.

[0404] For example, a "page turn command" for switching the display from one image information to another can be associated with a specific event. In addition, an argument for determining the page turning speed used when executing the "page turn command" can be given using the specific event.

[0405] For example, a "scroll command" that moves the display position of a part of an image information and displays another part that is adjacent to the part can be associated with a specific event. Note that an argument that determines the speed at which the display is moved when the "scroll command" is executed can be given using the specific event.

[0406] For example, a command to set a display method or a command to generate image information can be associated with a specific event. An argument that determines the brightness of an image to be generated can be associated with a specific event. The argument that determines the brightness of an image to be generated can also be determined based on the brightness of the environment detected by the detection unit 250.

[0407] For example, a command to obtain information distributed using a push-type service using the communication unit 290 can be associated with a specific event.

[0408] The presence or absence of qualification to obtain information may be determined using location information detected by the detection unit 250. Specifically, it may be determined that the user is qualified to obtain information when the user is inside or in an area of ​​a specific classroom, school, conference room, company, building, etc. As a result, for example, educational materials distributed in a classroom of a school or university, etc., can be received and the information processing device 200 can be used as a textbook, etc. (see FIG. 10(C)). Or, materials distributed in a conference room of a company, etc. can be received and used as conference materials.

[0409] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0410] (Embodiment 8) In this embodiment, a structure of a data processing device of one embodiment of the present invention will be described with reference to FIGS.

[0411] 13 to 15 are diagrams illustrating a configuration of an information processing device of one embodiment of the present invention. Fig. 13(A) is a block diagram of the information processing device, and Figs. 13(B) to 13(E) are perspective views illustrating the configuration of the information processing device. Figs. 14(A) to 14(E) are perspective views illustrating the configuration of the information processing device. Figs. 15(A) and 15(B) are perspective views illustrating the configuration of the information processing device.

[0412] <Information processing device> A data processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 13A).

[0413] The arithmetic unit 5210 has a function of receiving operation information and a function of supplying image information based on the operation information.

[0414] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, and a communication unit 5290, a function of supplying operation information, and a function of being supplied with image information. The input / output device 5220 also includes a function of supplying detection information, a function of supplying communication information, and a function of being supplied with communication information.

[0415] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on an operation by a user of the information processing device 5200B.

[0416] Specifically, the input unit 5240 can use a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye-gaze input device, a posture detection device, or the like.

[0417] The display portion 5230 has a function of displaying a display panel and displaying image information. For example, any of the display panels described in any of Embodiments 1 to 4 can be used as the display portion 5230.

[0418] The detection unit 5250 has a function of supplying detection information, for example, a function of detecting the surrounding environment in which the information processing device is used and supplying the detected information.

[0419] Specifically, the detection unit 5250 can include an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like.

[0420] The communication unit 5290 has a function of receiving and supplying communication information. For example, it has a function of connecting to other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-distance wireless communication.

[0421] "Configuration example 1 of information processing device" For example, an outer shape along a cylindrical pillar or the like can be applied to the display unit 5230 (see FIG. 13(B)). In addition, it has a function of changing the display method according to the illuminance of the usage environment. In addition, it has a function of detecting the presence of a person and changing the display content. This allows it to be installed on a pillar of a building, for example. Or, it can display advertisements or guidance, or it can be used for digital signage, etc.

[0422] "Configuration example 2 of information processing device" For example, it has a function of generating image information based on the trajectory of a pointer used by a user (see FIG. 13(C)). Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to be used in one display area. Alternatively, multiple display panels can be arranged to be used as a multi-screen. This allows the display to be used, for example, in electronic whiteboards, electronic bulletin boards, electronic signs, etc.

[0423] "Configuration example 3 of information processing device" It can receive information from another device and display it on the display unit 5230 (see FIG. 13(D)). Alternatively, several options can be displayed. Alternatively, the user can select some of the options and send a reply to the sender of the information. Alternatively, for example, the smartwatch has a function of changing the display method according to the illuminance of the usage environment. This makes it possible to reduce the power consumption of the smartwatch, for example. Alternatively, for example, an image can be displayed on the smartwatch so that the smartwatch can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0424] "Configuration Example 4 of Information Processing Device" The display unit 5230 has, for example, a curved surface that curves gently along the side of the housing (see FIG. 13(E)). Alternatively, the display unit 5230 has a display panel, and the display panel has a function of displaying on, for example, the front, side, top, and back. This allows information to be displayed not only on the front of the mobile phone, but also on the side, top, and back.

[0425] 《Configuration Example 5 of Information Processing Device》 For example, information can be received from the Internet and displayed on the display unit 5230 (see FIG. 14A). A created message can be checked on the display unit 5230. A created message can be transmitted to another device. For example, the smartphone has a function of changing the display method according to the illuminance of the usage environment. This can reduce the power consumption of the smartphone. For example, an image can be displayed on the smartphone so that the smartphone can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0426] Configuration Example 6 of Information Processing Device A remote controller can be used as the input unit 5240 (see FIG. 14(B)). Alternatively, for example, information can be received from a broadcast station or the Internet and displayed on the display unit 5230. Alternatively, a user can be photographed using the detection unit 5250. Alternatively, a video of the user can be transmitted. Alternatively, a viewing history of the user can be acquired and provided to a cloud service. Alternatively, recommendation information can be acquired from a cloud service and displayed on the display unit 5230. Alternatively, a program or video can be displayed based on the recommendation information. Alternatively, for example, a function of changing the display method according to the illuminance of the usage environment is provided. As a result, the video can be displayed on the television system so that it can be used suitably even when strong external light shines into the room on a sunny day.

[0427] 《Configuration Example 7 of Information Processing Device》 For example, learning materials can be received from the Internet and displayed on the display unit 5230 (see FIG. 14(C)). Alternatively, a report can be input using the input unit 5240 and transmitted to the Internet. Alternatively, correction results or evaluation of the report can be obtained from a cloud service and displayed on the display unit 5230. Alternatively, suitable learning materials can be selected and displayed based on the evaluation.

[0428] For example, an image signal can be received from another information processing device and displayed on the display unit 5230. Alternatively, the display unit 5230 can be used as a sub-display by leaning it against a stand or the like. This allows images to be displayed on the tablet computer so that it can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0429] "Configuration Example 8 of Information Processing Device" The information processing device includes, for example, a plurality of display units 5230 (see FIG. 14(D)). For example, an image can be captured by the detection unit 5250 and displayed on the display unit 5230. Alternatively, the captured image can be displayed on the detection unit. Alternatively, the captured image can be decorated using the input unit 5240. Alternatively, a message can be attached to the captured image. Alternatively, the captured image can be transmitted to the Internet. Alternatively, the device has a function of changing the capture conditions according to the illuminance of the usage environment. This allows the subject to be displayed on the digital camera so that it can be viewed appropriately even in an environment with strong external light, such as outdoors on a sunny day.

[0430] "Configuration Example 9 of Information Processing Device" For example, another information processing device can be used as a slave and the information processing device of this embodiment can be used as a master to control the other information processing device (see FIG. 14(E)). Alternatively, for example, part of the image information can be displayed on the display unit 5230, and another part of the image information can be displayed on the display unit of the other information processing device. Alternatively, an image signal can be supplied. Alternatively, information to be written can be obtained from an input unit of the other information processing device using the communication unit 5290. This makes it possible to utilize a wide display area using, for example, a portable personal computer.

[0431] "Configuration Example 10 of Information Processing Device" The information processing device includes, for example, a detection unit 5250 that detects acceleration or orientation (see FIG. 15(A)). Alternatively, the detection unit 5250 can supply information related to the position of the user or the direction in which the user is facing. Alternatively, the information processing device can generate image information for the right eye and image information for the left eye based on the position of the user or the direction in which the user is facing. Alternatively, the display unit 5230 includes a display area for the right eye and a display area for the left eye. This makes it possible to display, for example, an image of a virtual reality space that provides an immersive feeling on a goggle-type information processing device.

[0432] "Configuration Example 11 of Information Processing Device" The information processing device includes, for example, an imaging device, a detection unit 5250 that detects acceleration or orientation (see FIG. 15(B)). Alternatively, the detection unit 5250 can supply information related to the user's position or the direction in which the user is facing. Alternatively, the information processing device can generate image information based on the user's position or the direction in which the user is facing. This makes it possible to display, for example, information attached to a real landscape. Alternatively, an image of an augmented reality space can be displayed on a glasses-type information processing device.

[0433] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0434] (Embodiment 9) In this embodiment, a structure of a transistor that can be used for a functional panel of one embodiment of the present invention will be described with reference to Fig. 21. For example, the transistor can be used for the transistor M21 or the transistor MD of the functional panel of one embodiment of the present invention described in Embodiment 1.

[0435] <Example of semiconductor device configuration> A structure of a semiconductor device including a transistor 300 will be described with reference to FIG. 21. FIGS. 21A to 21D are a top view and a cross-sectional view of a semiconductor device including a transistor 300. FIG. 21A is a top view of the semiconductor device. FIGS. 21B to 21D are cross-sectional views of the semiconductor device. FIG. 21B is a cross-sectional view of a portion indicated by a dashed line A1-A2 in FIG. 21A, and is also a cross-sectional view of the transistor 300 in the channel length direction. FIG. 21C is a cross-sectional view of a portion indicated by a dashed line A3-A4 in FIG. 21A, and is also a cross-sectional view of the transistor 300 in the channel width direction. FIG. 21D is a cross-sectional view of a portion indicated by a dashed line A5-A6 in FIG. 21A. Note that some elements are omitted in the top view of FIG. 21A for clarity.

[0436] The following insulators, conductors, oxides, and semiconductors can be formed by sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), or the like. In this specification and the like, the term "insulator" can be replaced with an insulating film or an insulating layer. The term "conductor" can be replaced with a conductive film or a conductive layer. The term "oxide" can be replaced with an oxide film or an oxide layer. The term "semiconductor" can be replaced with a semiconductor film or a semiconductor layer.

[0437] The semiconductor device of one embodiment of the present invention includes an insulator 312 on a substrate (not shown), an insulator 314 on the insulator 312, a transistor 300 on the insulator 314, an insulator 380 on the transistor 300, an insulator 382 on the insulator 380, an insulator 383 on the insulator 382, ​​and an insulator 385 on the insulator 383. The insulators 312, 314, 380, 382, ​​383, and 385 function as interlayer insulating films. The semiconductor device also includes a conductor 340 (conductor 340a and conductor 340b) that is electrically connected to the transistor 300 and functions as a plug. Note that an insulator 341 (insulator 341a and insulator 341b) is provided in contact with a side surface of the conductor 340 that functions as a plug. In addition, a conductor 346 (conductor 346a and conductor 346b) that is electrically connected to the conductor 340 and functions as wiring is provided on the insulator 385 and the conductor 340.

[0438] Insulator 341a is provided in contact with the inner wall of the opening of insulator 380, insulator 382, ​​insulator 383, and insulator 385, a first conductor of conductor 340a is provided in contact with the side surface of insulator 341a, and a second conductor of conductor 340a is provided further inside. Insulator 341b is provided in contact with the inner wall of the opening of insulator 380, insulator 382, ​​insulator 383, and insulator 385, a first conductor of conductor 340b is provided in contact with the side surface of insulator 341b, and a second conductor of conductor 340b is provided further inside. Here, the height of the top surface of conductor 340 and the height of the top surface of insulator 385 in the region overlapping with conductor 346 can be made approximately the same. Note that, in the transistor 300, a configuration in which the first conductor of conductor 340 and the second conductor of conductor 340 are stacked is shown, but the present invention is not limited to this. For example, the conductor 340 may be provided as a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, the layers may be distinguished by giving ordinal numbers in the order of formation.

[0439] [Transistor 300] 21A to 21D, the transistor 300 includes an insulator 316 on an insulator 314, a conductor 305 (conductor 305a, conductor 305b, and conductor 305c) disposed so as to be embedded in the insulator 316, an insulator 322 on the insulator 316 and on the conductor 305, an insulator 324 on the insulator 322, an oxide 330a on the insulator 324, an oxide 330b on the oxide 330a, an oxide 343 (oxide 343a and oxide 343b) on the oxide 330b, a conductor 342a on the oxide 343a, and a conductor 343b on the oxide 343a. 42a, conductor 342b on oxide 343b, insulator 371b on conductor 342b, insulator 350 (insulator 350a and insulator 350b) on oxide 330b, conductor 360 (conductor 360a and conductor 360b) located on insulator 350 and overlapping part of oxide 330b, and insulator 375 arranged to cover insulator 322, insulator 324, oxide 330a, oxide 330b, oxide 343a, oxide 343b, conductor 342a, conductor 342b, insulator 371a, and insulator 371b.

[0440] In the following, the oxide 330a and the oxide 330b may be collectively referred to as the oxide 330. The conductor 342a and the conductor 342b may be collectively referred to as the conductor 342. The insulator 371a and the insulator 371b may be collectively referred to as the insulator 371.

[0441] The insulator 380 and the insulator 375 have openings that reach the oxide 330b. The insulator 350 and the conductor 360 are disposed in the openings. In addition, in the channel length direction of the transistor 300, the conductor 360 and the insulator 350 are provided between the insulator 371a, the conductor 342a, and the oxide 343a and the insulator 371b, the conductor 342b, and the oxide 343b. The insulator 350 has a region in contact with a side surface of the conductor 360 and a region in contact with a bottom surface of the conductor 360.

[0442] The oxide 330 preferably has an oxide 330a disposed on the insulator 324 and an oxide 330b disposed on the oxide 330a. By having the oxide 330a below the oxide 330b, it is possible to suppress the diffusion of impurities from a structure formed below the oxide 330a to the oxide 330b.

[0443] Note that in the transistor 300, the oxide 330 has a two-layer structure of the oxide 330a and the oxide 330b, but the present invention is not limited to this. For example, the oxide 330b may have a single layer or a stacked structure of three or more layers, or each of the oxide 330a and the oxide 330b may have a stacked structure.

[0444] The conductor 360 functions as a first gate (also referred to as a top gate) electrode, and the conductor 305 functions as a second gate (also referred to as a back gate) electrode. The insulator 350 functions as a first gate insulating film, and the insulators 324 and 322 function as a second gate insulating film. The conductor 342a functions as one of a source electrode or a drain electrode, and the conductor 342b functions as the other of the source electrode or the drain electrode. At least a part of a region of the oxide 330 overlapping with the conductor 360 functions as a channel formation region.

[0445] The oxide 330b has one of a source region and a drain region in a region overlapping with the conductor 342a, and has the other of the source region and the drain region in a region overlapping with the conductor 342b. The oxide 330b also has a channel formation region (the region indicated by the shaded area in FIG. 21B) between the source region and the drain region.

[0446] The channel formation region is a high-resistance region having a low carrier concentration because it has fewer oxygen vacancies or a lower impurity concentration than the source and drain regions. 18 cm -3 It is preferable that the value is less than 1×10 17 cm -3 More preferably, it is less than 1×10 16 cm -3 More preferably, it is less than 1×10 13 cm -3 More preferably, it is less than 1×10 12 cm -3 The lower limit of the carrier concentration in the channel formation region is not particularly limited, but is preferably, for example, 1×10 -9 cm -3 It can be said that:

[0447] In the above, the channel formation region, the source region, and the drain region are formed in the oxide 330b, but the present invention is not limited to this. For example, the channel formation region, the source region, and the drain region may be formed in the oxide 330a in the same manner.

[0448] In the transistor 300, a metal oxide that functions as a semiconductor (hereinafter also referred to as an oxide semiconductor) is preferably used for the oxide 330 including the channel formation region (the oxide 330a and the oxide 330b).

[0449] In addition, the metal oxide functioning as a semiconductor preferably has a band gap of 2 eV or more, more preferably 2.5 eV or more. By using a metal oxide having a wide band gap in this way, the off-state current of a transistor can be reduced.

[0450] As the oxide 330, for example, a metal oxide such as an In-M-Zn oxide having indium, an element M, and zinc (wherein the element M is one or more selected from aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc.) may be used. Alternatively, as the oxide 330, an In-Ga oxide, an In-Zn oxide, or an indium oxide may be used.

[0451] Here, it is preferable that the atomic ratio of In to the element M in the metal oxide used for oxide 330b is greater than the atomic ratio of In to the element M in the metal oxide used for oxide 330a.

[0452] Specifically, the oxide 330a may be a metal oxide having a composition of In:M:Zn=1:3:4 [atomic ratio] or a composition close thereto, or In:M:Zn=1:1:0.5 [atomic ratio] or a composition close thereto. The oxide 330b may be a metal oxide having a composition of In:M:Zn=1:1:1 [atomic ratio] or a composition close thereto, or In:M:Zn=4:2:3 [atomic ratio] or a composition close thereto. The composition close thereto includes a range of ±30% of the desired atomic ratio. The element M is preferably gallium.

[0453] In addition, when a metal oxide film is formed by a sputtering method, the above atomic ratio is not limited to the atomic ratio of the formed metal oxide film, but may be the atomic ratio of a sputtering target used to form the metal oxide film.

[0454] In this manner, by disposing the oxide 330a below the oxide 330b, it is possible to suppress the diffusion of impurities and oxygen from structures formed below the oxide 330a into the oxide 330b.

[0455] In addition, since the oxide 330a and the oxide 330b have a common element other than oxygen (as a main component), the defect state density at the interface between the oxide 330a and the oxide 330b can be reduced. Since the defect state density at the interface between the oxide 330a and the oxide 330b can be reduced, the effect of interface scattering on carrier conduction is small, and a high on-current can be obtained.

[0456] It is preferable that the oxide 330a and the oxide 330b each have crystallinity. In particular, it is preferable to use c-axis aligned crystalline oxide semiconductor (CAAC-OS) as the oxide 330b.

[0457] CAAC-OS has a highly crystalline and dense structure and is free of impurities and defects (e.g., oxygen vacancies (V OIn particular, by subjecting the metal oxide to heat treatment at a temperature at which the metal oxide does not polycrystallize (for example, 400° C. or higher and 600° C. or lower) after formation of the metal oxide, the CAAC-OS can have a dense structure with higher crystallinity. In this way, the density of the CAAC-OS can be increased, thereby further reducing the diffusion of impurities or oxygen in the CAAC-OS.

[0458] On the other hand, it is difficult to identify clear grain boundaries in CAAC-OS, so it is said that the decrease in electron mobility caused by grain boundaries is unlikely to occur. Therefore, metal oxides with CAAC-OS have stable physical properties. Therefore, metal oxides with CAAC-OS are resistant to heat and highly reliable.

[0459] At least one of the insulators 312, 314, 371, 375, 382, ​​and 383 preferably functions as a barrier insulating film that suppresses diffusion of impurities such as water and hydrogen from the substrate side or from above the transistor 300 to the transistor 300. Therefore, at least one of the insulators 312, 314, 371, 375, 382, ​​and 383 is preferably made of an insulating material that has a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules (NO, NO, NO, etc.), and copper atoms (through which the above impurities are unlikely to permeate). Alternatively, it is preferable to use an insulating material that has a function of suppressing diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) (through which the above oxygen is unlikely to permeate).

[0460] In this specification, a barrier insulating film refers to an insulating film having a barrier property. In this specification, the barrier property means a function of suppressing the diffusion of a corresponding substance (also called low permeability) or a function of capturing and fixing a corresponding substance (also called gettering).

[0461] For example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide can be used for the insulators 312, 314, 371, 375, 382, ​​and 383. For example, it is preferable to use silicon nitride or the like, which has a higher hydrogen barrier property, for the insulators 312, 375, and 383. For example, it is preferable to use aluminum oxide or magnesium oxide, which has a higher function of capturing and fixing hydrogen, for the insulators 314, 371, and 382. This can suppress impurities such as water and hydrogen from diffusing from the substrate side to the transistor 300 side through the insulators 312 and 314. Alternatively, it is possible to suppress impurities such as water and hydrogen from diffusing from an interlayer insulating film or the like disposed outside the insulator 383 to the transistor 300 side. Alternatively, oxygen contained in the insulator 324 or the like can be suppressed from diffusing toward the substrate side through the insulator 312 and the insulator 314. Alternatively, oxygen contained in the insulator 380 or the like can be suppressed from diffusing upward from the transistor 300 through the insulator 382 or the like. In this manner, it is preferable to have a structure in which the transistor 300 is surrounded by the insulators 312, 314, 371, 375, 382, ​​and 383, which have a function of suppressing the diffusion of impurities such as water and hydrogen, and oxygen.

[0462] Here, it is preferable to use an oxide having an amorphous structure as the insulators 312, 314, 371, 375, 382, ​​and 383. For example, AlO x (x is any number greater than 0), or MgO yIt is preferable to use a metal oxide such as y (y is any number greater than 0). In such a metal oxide having an amorphous structure, oxygen atoms have dangling bonds, and the dangling bonds may have the property of capturing or fixing hydrogen. By using such a metal oxide having an amorphous structure as a component of the transistor 300 or providing it around the transistor 300, hydrogen contained in the transistor 300 or hydrogen present around the transistor 300 can be captured or fixed. In particular, it is preferable to capture or fix hydrogen contained in the channel formation region of the transistor 300. By using a metal oxide having an amorphous structure as a component of the transistor 300 or providing it around the transistor 300, a transistor 300 and a semiconductor device having good characteristics and high reliability can be manufactured.

[0463] Note that the insulators 312, 314, 371, 375, 382, ​​and 383 preferably have an amorphous structure, but may have a polycrystalline region in a portion thereof. The insulators 312, 314, 371, 375, 382, ​​and 383 may have a multilayer structure in which a layer of an amorphous structure and a layer of a polycrystalline structure are stacked. For example, they may have a stacked structure in which a layer of a polycrystalline structure is formed on a layer of an amorphous structure.

[0464] The insulators 312, 314, 371, 375, 382, ​​and 383 may be formed by, for example, a sputtering method. Because the sputtering method does not require the use of hydrogen as a film formation gas, the hydrogen concentration of the insulators 312, 314, 371, 375, 382, ​​and 383 can be reduced. Note that the film formation method is not limited to the sputtering method, and a CVD method, an MBE method, a PLD method, an ALD method, or the like may be used as appropriate.

[0465] The insulators 316, 380, and 385 preferably have a lower dielectric constant than the insulator 314. By using a material with a low dielectric constant as an interlayer insulating film, parasitic capacitance between wirings can be reduced. For example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide to which fluorine has been added, silicon oxide to which carbon has been added, silicon oxide to which carbon and nitrogen have been added, silicon oxide having vacancies, or the like may be used as appropriate for the insulators 316, 380, and 385.

[0466] The conductor 305 is disposed so as to overlap the oxide 330 and the conductor 360. Here, the conductor 305 is preferably provided by being embedded in an opening formed in the insulator 316.

[0467] The conductor 305 includes conductor 305a, conductor 305b, and conductor 305c. The conductor 305a is provided in contact with the bottom surface and side wall of the opening. The conductor 305b is provided so as to be embedded in a recess formed in the conductor 305a. Here, the upper surface of the conductor 305b is lower than the upper surface of the conductor 305a and the upper surface of the insulator 316. The conductor 305c is provided in contact with the upper surface of the conductor 305b and the side surface of the conductor 305a. Here, the height of the upper surface of the conductor 305c is approximately equal to the height of the upper surface of the conductor 305a and the height of the upper surface of the insulator 316. In other words, the conductor 305b is configured to be wrapped in the conductor 305a and the conductor 305c.

[0468] The conductor 305a and the conductor 305c may be made of a conductive material that can be used for the conductor 360a, which will be described later. The conductor 305b may be made of a conductive material that can be used for the conductor 360b, which will be described later. Although the conductor 305 in the transistor 300 has a stacked structure of the conductor 305a, the conductor 305b, and the conductor 305c, the present invention is not limited to this. For example, the conductor 305 may be provided as a single layer, a two-layer, or a four or more layer stacked structure.

[0469] The insulators 322 and 324 function as gate insulating films.

[0470] The insulator 322 preferably has a function of suppressing the diffusion of hydrogen (e.g., at least one of hydrogen atoms, hydrogen molecules, etc.). The insulator 322 preferably has a function of suppressing the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). For example, the insulator 322 preferably has a function of suppressing the diffusion of one or both of hydrogen and oxygen more than the insulator 324.

[0471] The insulator 322 may be an insulator containing an oxide of one or both of insulating materials, aluminum and hafnium. As the insulator, it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like. Alternatively, the insulator 322 may be a barrier insulating film that can be used for the insulator 314 described above.

[0472] The insulator 324 may be made of silicon oxide, silicon oxynitride, or the like as appropriate. By providing the insulator 324 containing oxygen in contact with the oxide 330, oxygen vacancies in the oxide 330 can be reduced and the reliability of the transistor 300 can be improved. The insulator 324 is preferably processed into an island shape so as to overlap with the oxide 330a. In this case, the insulator 375 is in contact with a side surface of the insulator 324 and an upper surface of the insulator 322. This allows the insulator 324 and the insulator 380 to be separated from each other by the insulator 375, and therefore oxygen contained in the insulator 380 can be diffused into the insulator 324, preventing the insulator 324 from becoming excessively oxygen-rich.

[0473] Note that the insulator 322 and the insulator 324 may have a stacked structure of two or more layers. In this case, the insulator 322 and the insulator 324 are not limited to a stacked structure made of the same material, and may be a stacked structure made of different materials. Note that, although the insulator 324 is formed in an island shape overlapping with the oxide 330a in FIG. 21B and other drawings, the present invention is not limited to this. If the amount of oxygen contained in the insulator 324 can be appropriately adjusted, the insulator 324 may be configured without being patterned, similar to the insulator 322.

[0474] The oxide 343a and the oxide 343b are provided on the oxide 330b. The oxide 343a and the oxide 343b are provided to be separated from each other with the conductor 360 interposed therebetween. The oxide 343 (the oxide 343a and the oxide 343b) preferably has a function of suppressing oxygen permeation. By disposing the oxide 343 having a function of suppressing oxygen permeation between the conductor 342 functioning as a source electrode or a drain electrode and the oxide 330b, the electrical resistance between the conductor 342 and the oxide 330b is reduced, which is preferable. Note that if the electrical resistance between the conductor 342 and the oxide 330b can be sufficiently reduced, the oxide 343 may not be provided.

[0475] A metal oxide having element M may be used as oxide 343. In particular, element M may be aluminum, gallium, yttrium, or tin. It is preferable that oxide 343 has a higher concentration of element M than oxide 330b. Gallium oxide may be used as oxide 343. A metal oxide such as In-M-Zn oxide may be used as oxide 343. Specifically, in the metal oxide used for oxide 343, the atomic ratio of element M to In is preferably greater than the atomic ratio of element M to In in the metal oxide used for oxide 330b. The film thickness of oxide 343 is preferably 0.5 nm to 5 nm, more preferably 1 nm to 3 nm, and even more preferably 1 nm to 2 nm.

[0476] It is preferable that the conductor 342a be provided in contact with a top surface of the oxide 343a, and the conductor 342b be provided in contact with a top surface of the oxide 343b. The conductor 342a and the conductor 342b function as a source electrode and a drain electrode of the transistor 300, respectively.

[0477] As the conductor 342 (conductor 342a and conductor 342b), for example, a nitride containing tantalum, a nitride containing titanium, a nitride containing molybdenum, a nitride containing tungsten, a nitride containing tantalum and aluminum, a nitride containing titanium and aluminum, or the like is preferably used. In one embodiment of the present invention, a nitride containing tantalum is particularly preferable. Also, for example, ruthenium oxide, ruthenium nitride, an oxide containing strontium and ruthenium, an oxide containing lanthanum and nickel, or the like may be used. These materials are preferable because they are conductive materials that are difficult to oxidize, or materials that maintain their conductivity even when they absorb oxygen.

[0478] It is preferable that no curved surface be formed between the side surface and the top surface of the conductor 342. The conductor 342 having no curved surface can increase the cross-sectional area of ​​the conductor 342 in the cross section in the channel width direction as shown in Figure 21 (D). This can increase the conductivity of the conductor 342 and the on-state current of the transistor 300.

[0479] The insulator 371a is provided in contact with the upper surface of the conductor 342a, and the insulator 371b is provided in contact with the upper surface of the conductor 342b.

[0480] The insulator 375 is provided in contact with the top surface of the insulator 322, the side surface of the insulator 324, the side surface of the oxide 330a, the side surface of the oxide 330b, the side surface of the oxide 343, the side surface of the conductor 342, and the side surface and top surface of the insulator 371. The insulator 375 has openings formed in the regions where the insulator 350 and the conductor 360 are provided.

[0481] By providing insulators 314, 371, and 375, which have the function of capturing impurities such as hydrogen, in the region sandwiched between insulators 312 and 375, impurities such as hydrogen contained in insulator 324 or insulator 316 can be captured and the amount of hydrogen in the region can be kept constant. In this case, insulators 314, 371, and 375 preferably contain aluminum oxide with an amorphous structure.

[0482] The insulator 350 has an insulator 350a and an insulator 350b on the insulator 350a, and functions as a gate insulating film. The insulator 350a is preferably disposed in contact with the top surface of the oxide 330b, a side surface of the oxide 343, a side surface of the conductor 342, a side surface of the insulator 371, a side surface of the insulator 375, and a side surface of the insulator 380. The thickness of the insulator 350 is preferably 1 nm or more and 20 nm or less.

[0483] The insulator 350a may be made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon, silicon oxide doped with carbon and nitrogen, silicon oxide having vacancies, or the like. Silicon oxide and silicon oxynitride are particularly preferred because they are stable against heat. As with the insulator 324, the insulator 350a preferably has a reduced concentration of impurities such as water and hydrogen.

[0484] It is preferable that the insulator 350a is formed using an insulator that releases oxygen when heated, and the insulator 350b is formed using an insulator that has a function of suppressing diffusion of oxygen. With such a configuration, it is possible to suppress the diffusion of oxygen contained in the insulator 350a into the conductor 360. In other words, it is possible to suppress a decrease in the amount of oxygen supplied to the oxide 330. In addition, it is possible to suppress oxidation of the conductor 360 due to the oxygen contained in the insulator 350a. For example, the insulator 350b can be provided using a material similar to that of the insulator 322.

[0485] Specifically, the insulator 350b may be a metal oxide containing one or more of hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, or a metal oxide that can be used as the oxide 330. In particular, it is preferable to use an insulator containing an oxide of one or both of aluminum and hafnium. It is preferable to use aluminum oxide, hafnium oxide, or an oxide containing aluminum and hafnium (hafnium aluminate) as the insulator. The thickness of the insulator 350b is preferably 0.5 nm or more and 3.0 nm or less, and more preferably 1.0 nm or more and 1.5 nm or less.

[0486] 21B and 21C, the insulator 350 is illustrated as having a two-layer laminated structure, but the present invention is not limited to this. The insulator 350 may have a single layer structure or a laminated structure of three or more layers.

[0487] The conductor 360 is provided on the insulator 350b and functions as a first gate electrode of the transistor 300. The conductor 360 preferably includes a conductor 360a and a conductor 360b disposed on the conductor 360a. For example, the conductor 360a is preferably disposed so as to surround the bottom and side surfaces of the conductor 360b. As shown in FIG. 21(B) and FIG. 21(C), the top surface of the conductor 360 is substantially flush with the top surface of the insulator 350. Note that, although the conductor 360 is shown as having a two-layer structure of the conductor 360a and the conductor 360b in FIG. 21(B) and FIG. 21(C), the conductor 360 may have a single-layer structure or a stacked structure of three or more layers.

[0488] The conductor 360a is preferably made of a conductive material having a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitrogen oxide molecules, copper atoms, etc. Alternatively, it is preferably made of a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.).

[0489] Furthermore, since the conductor 360a has a function of suppressing oxygen diffusion, it is possible to suppress a decrease in conductivity due to oxidation of the conductor 360b caused by oxygen contained in the insulator 350. As a conductive material having a function of suppressing oxygen diffusion, it is preferable to use, for example, titanium, titanium nitride, tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like.

[0490] In addition, since the conductor 360 also functions as wiring, it is preferable to use a conductor with high conductivity. For example, the conductor 360b can be a conductive material mainly composed of tungsten, copper, or aluminum. The conductor 360b may also have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material.

[0491] Furthermore, in the transistor 300, the conductor 360 is formed in a self-aligned manner so as to fill an opening formed in the insulator 380 or the like. By forming the conductor 360 in this manner, the conductor 360 can be reliably placed in the region between the conductor 342a and the conductor 342b without alignment.

[0492] 21C, in the channel width direction of the transistor 300, the height of the bottom surface of the conductor 360 in a region where the conductor 360 does not overlap with the oxide 330b is preferably lower than the height of the bottom surface of the oxide 330b when the bottom surface of the insulator 322 is used as a reference. When the conductor 360 functioning as a gate electrode covers the side and top surfaces of the channel formation region of the oxide 330b via the insulator 350 or the like, the electric field of the conductor 360 can be easily applied to the entire channel formation region of the oxide 330b. Thus, the on-current of the transistor 300 can be increased, and the frequency characteristics can be improved. When the bottom surface of insulator 322 is used as a reference, the difference between the height of the bottom surface of conductor 360 in the area where oxide 330a and oxide 330b do not overlap with conductor 360 and the height of the bottom surface of oxide 330b is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, and more preferably 5 nm or more and 20 nm or less.

[0493] The insulator 380 is provided on the insulator 375, and has openings formed in the regions where the insulator 350 and the conductor 360 are provided. The upper surface of the insulator 380 may be flattened. In this case, it is preferable that the upper surface of the insulator 380 be roughly flush with the upper surfaces of the insulator 350 and the conductor 360.

[0494] The insulator 382 is provided in contact with the top surface of the insulator 380, the top surface of the insulator 350, and the top surface of the conductor 360. The insulator 382 preferably functions as a barrier insulating film that suppresses diffusion of impurities such as water and hydrogen from above into the insulator 380, and preferably has a function of capturing impurities such as hydrogen. The insulator 382 preferably functions as a barrier insulating film that suppresses oxygen transmission. For example, an insulator such as aluminum oxide may be used as the insulator 382. By providing the insulator 382 in contact with the insulator 380 and having a function of capturing impurities such as hydrogen in a region sandwiched between the insulator 312 and the insulator 383, the impurities such as hydrogen contained in the insulator 380 can be captured, and the amount of hydrogen in the region can be kept constant. In particular, it is preferable to use aluminum oxide having an amorphous structure as the insulator 382 because hydrogen can be more effectively captured or fixed. This makes it possible to manufacture a transistor 300 and a semiconductor device having excellent characteristics and high reliability.

[0495] The conductor 340a and the conductor 340b are preferably made of a conductive material containing tungsten, copper, or aluminum as a main component. The conductor 340a and the conductor 340b may have a layered structure. When the conductor 340 has a layered structure, the conductor in contact with the insulator 341 is preferably made of a conductive material that has a function of suppressing the permeation of impurities such as water and hydrogen. For example, the conductive material that can be used for the conductor 360a described above may be used.

[0496] As the insulator 341a and the insulator 341b, for example, an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide may be used. The insulator 341a and the insulator 341b are provided in contact with the insulator 383, the insulator 382, ​​and the insulator 371, and therefore can prevent impurities such as water and hydrogen contained in the insulator 380 and the like from being mixed into the oxide 330 through the conductor 340a and the conductor 340b.

[0497] Conductors 346 (conductors 346a and 346b) may be disposed in contact with the upper surface of conductor 340a and the upper surface of conductor 340b to function as wiring. Conductor 346 is preferably made of a conductive material containing tungsten, copper, or aluminum as a main component. The conductor may have a laminated structure, for example, a laminate of titanium or titanium nitride and the above-mentioned conductive material. The conductor may be formed so as to be embedded in an opening provided in an insulator.

[0498] As a result, a semiconductor device having good electrical characteristics can be provided. A semiconductor device having good reliability can be provided. A semiconductor device that can be miniaturized or highly integrated can be provided. A semiconductor device with low power consumption can be provided.

[0499] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0500] (Embodiment 10) In this embodiment, a metal oxide (hereinafter also referred to as an oxide semiconductor) which can be used for the OS transistor described in the above embodiment will be described.

[0501] The metal oxide preferably contains at least indium or zinc. In particular, it is preferable that the metal oxide contains indium and zinc. In addition to these, it is preferable that the metal oxide contains aluminum, gallium, yttrium, tin, etc. In addition, it may contain one or more elements selected from boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0502] <Classification of crystal structures> First, classification of crystal structures of oxide semiconductors will be described with reference to Fig. 22A, which illustrates classification of the crystal structures of oxide semiconductors, typically IGZO (a metal oxide containing In, Ga, and Zn).

[0503] As shown in FIG. 22A, oxide semiconductors are roughly classified into "amorphous", "crystalline", and "crystal". "Amorphous" includes completely amorphous. "Crystalline" includes c-axis-aligned crystalline (CAAC), nanocrystalline (nc), and cloud-aligned composite (CAC). "Crystalline" excludes single crystal, poly crystal, and completely amorphous. "Crystalline" includes single crystal and poly crystal.

[0504] The structure in the bold frame shown in Fig. 22(A) is an intermediate state between "Amorphous" and "Crystal" and belongs to a new boundary region (New crystalline phase). In other words, this structure is completely different from the energetically unstable "Amorphous" and "Crystal".

[0505] The crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. Here, the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement of the CAAC-IGZO film classified as "Crystalline" is shown in FIG. 22(B). The GIXD method is also called the thin film method or the Seemann-Bohlin method. Hereinafter, the XRD spectrum obtained by the GIXD measurement shown in FIG. 22(B) will be simply referred to as the XRD spectrum. The composition of the CAAC-IGZO film shown in FIG. 22(B) is in the vicinity of In:Ga:Zn=4:2:3 [atomic ratio]. The thickness of the CAAC-IGZO film shown in FIG. 22(B) is 500 nm.

[0506] As shown in Figure 22(B), a peak indicating clear crystallinity is detected in the XRD spectrum of the CAAC-IGZO film. Specifically, a peak indicating c-axis orientation is detected near 2θ=31° in the XRD spectrum of the CAAC-IGZO film. Note that, as shown in Figure 22(B), the peak near 2θ=31° is asymmetric with respect to the angle at which the peak intensity is detected.

[0507] The crystal structure of the film or substrate can be evaluated from a diffraction pattern (also called a nanobeam electron diffraction pattern) observed by nanobeam electron diffraction (NBED). The diffraction pattern of the CAAC-IGZO film is shown in FIG. 22(C). FIG. 22(C) is a diffraction pattern observed by NBED, which causes an electron beam to be incident parallel to the substrate. The composition of the CAAC-IGZO film shown in FIG. 22(C) is approximately In:Ga:Zn=4:2:3 [atomic ratio]. In the nanobeam electron diffraction method, electron diffraction is performed with a probe diameter of 1 nm.

[0508] As shown in FIG. 22(C), multiple spots indicating c-axis orientation are observed in the diffraction pattern of the CAAC-IGZO film.

[0509] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified differently from that shown in FIG. 22A when focusing on their crystal structures. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OS), amorphous oxide semiconductors, and the like.

[0510] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0511] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystalline regions, each of which has a c-axis aligned in a specific direction. The specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. The crystalline region is a region having periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, the crystalline region is also a region with a uniform lattice arrangement. CAAC-OS has a region in which a plurality of crystalline regions are connected in the ab-plane direction, and the region may have distortion. The distortion refers to a portion in which the direction of the lattice arrangement changes between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement in the region in which the plurality of crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor having a c-axis aligned and no clear orientation in the ab-plane direction.

[0512] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be about several tens of nm.

[0513] In addition, in an In-M-Zn oxide (wherein element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter, In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter, (M, Zn) layer) are stacked. Note that indium and element M are mutually substituted. Thus, the (M, Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may contain Zn. The layered structure is observed as a lattice image in a high-resolution TEM image, for example.

[0514] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD device, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0515] For example, a plurality of bright points (spots) are observed in the electron diffraction pattern of the CAAC-OS film, and the two spots are observed at positions symmetrical to each other with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0516] When the crystal region is observed from the specific direction, the lattice arrangement in the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. The above distortion may have a pentagonal or heptagonal lattice arrangement. In addition, no clear grain boundary can be confirmed in the CAAC-OS even in the vicinity of the distortion. That is, it is found that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is considered to be because the CAAC-OS can tolerate distortion due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction and the bond distance between atoms changes due to the substitution of metal atoms.

[0517] A crystal structure in which clear grain boundaries are observed is called a polycrystal. The grain boundaries are likely to become recombination centers and capture carriers, causing a decrease in the on-current of a transistor and a decrease in field effect mobility. Therefore, CAAC-OS in which clear grain boundaries are not observed is one of the crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor. In order to form a CAAC-OS, a structure containing Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the occurrence of grain boundaries more than In oxide.

[0518] The CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. In addition, since the crystallinity of an oxide semiconductor can be decreased by the inclusion of impurities or the generation of defects, the CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of an oxide semiconductor having the CAAC-OS are stable. Therefore, an oxide semiconductor having the CAAC-OS is resistant to heat and has high reliability. In addition, the CAAC-OS is stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of the CAAC-OS in an OS transistor can increase the degree of freedom in the manufacturing process.

[0519] [nc-OS] The nc-OS has periodic atomic arrangement in a minute region (for example, a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has minute crystals. Note that the size of the minute crystals is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore the minute crystals are also called nanocrystals. In addition, the nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is seen in the entire film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structure analysis is performed on an nc-OS film using an XRD device, no peak indicating crystallinity is detected in out-of-plane XRD measurement using θ / 2θ scan. In addition, when an nc-OS film is subjected to electron diffraction (also called selected area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystals (for example, 50 nm or more), a diffraction pattern like a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter (e.g., 1 nm to 30 nm) that is close to the size of a nanocrystal or smaller than the nanocrystal, an electron diffraction pattern in which multiple spots are observed within a ring-shaped region centered on the direct spot may be obtained.

[0520] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and an amorphous oxide semiconductor. The a-like OS has a void or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Moreover, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0521] <<Oxide semiconductor structure>> Next, the above-mentioned CAC-OS will be described in detail, with reference to its material composition.

[0522] [CAC-OS] CAC-OS is, for example, a material configuration in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide and the regions having the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0523] Furthermore, CAC-OS is a composite metal oxide in which the material is separated into a first region and a second region, forming a mosaic structure, and the first region is distributed throughout the film (hereinafter, also referred to as a cloud structure). In other words, CAC-OS is a composite metal oxide in which the first region and the second region are mixed together.

[0524] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are represented as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. Also, the second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. Also, the second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0525] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc., and the second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region mainly composed of In, and the second region can be rephrased as a region mainly composed of Ga.

[0526] In addition, there are cases where a clear boundary between the first region and the second region cannot be observed.

[0527] For example, in the case of a CAC-OS of an In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) has confirmed that the CAC-OS has a structure in which a region mainly composed of In (first region) and a region mainly composed of Ga (second region) are unevenly distributed and mixed.

[0528] When CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act in a complementary manner, giving the CAC-OS a switching function (On / Off function). In other words, CAC-OS has a conductive function in part of the material and an insulating function in other parts of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, it is possible to maximize both functions. Therefore, by using CAC-OS in a transistor, it is possible to achieve a high on-current (I on ), high field effect mobility (μ), and good switching behavior can be achieved.

[0529] Oxide semiconductors have a variety of structures and have different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0530] <Transistor Having Oxide Semiconductor> Next, the case where the oxide semiconductor is used for a transistor will be described.

[0531] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0532] For the transistor, an oxide semiconductor having a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than or equal to 1×10 15 cm -3 Less than 1×10, more preferably 13 cm -3 Less than or equal to 1×10 11 cm -3 Less than 1×10, more preferably 10 cm -3 Less than 1 x 10 -9 cm-3 The above is the case. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, an oxide semiconductor having a low impurity concentration and a low density of defect states is referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may be referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor.

[0533] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore the density of trap states might also be low.

[0534] In addition, charges trapped in the trap states of an oxide semiconductor take a long time to disappear and may behave as if they are fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0535] Therefore, in order to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in a nearby film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0536] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0537] When an oxide semiconductor contains silicon or carbon, which is one of the group 14 elements, defect levels are formed in the oxide semiconductor. For this reason, the concentrations of silicon or carbon in the oxide semiconductor and those near the interface with the oxide semiconductor (concentrations obtained by secondary ion mass spectrometry (SIMS)) are calculated as 2×10 18 atoms / cm 3 Less than or equal to 2 x 10 17atoms / cm 3 The following applies.

[0538] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect states may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal is likely to have normally-on characteristics. For this reason, when the concentration of an alkali metal or an alkaline earth metal in an oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0539] Furthermore, when nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor is likely to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in an oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than 5 x 10 18 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3 Less than 5×10, more preferably 17 atoms / cm 3 To the following:

[0540] Furthermore, hydrogen contained in an oxide semiconductor reacts with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. When hydrogen enters the oxygen vacancy, electrons serving as carriers may be generated. In addition, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons serving as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. For this reason, it is preferable to reduce hydrogen in the oxide semiconductor as much as possible. Specifically, when the hydrogen concentration in an oxide semiconductor measured by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Make it less than.

[0541] When an oxide semiconductor in which impurities are sufficiently reduced is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0542] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0543] (Embodiment 11) In this embodiment, a configuration example of an electronic device including a functional panel of one embodiment of the present invention will be described.

[0544] 24A shows a perspective view of a glasses-type electronic device 5700. The electronic device 5700 includes a pair of display panels 5701, a pair of housings 5702, a pair of optical members 5703, a pair of mounting portions 5704, a frame 5707, nose pads 5708, and the like.

[0545] The electronic device 5700 can project an image displayed on the display panel 5701 onto a display area 5706 of the optical member 5703. Since the optical member 5703 is translucent, the user can see the image displayed in the display area 5706 superimposed on a transmitted image visually recognized through the optical member 5703. Therefore, the electronic device 5700 is an electronic device capable of AR display.

[0546] One or both of the housings 5702 may be provided with a camera capable of capturing an image of the front. The housing 5702 may have a wireless communication device that can supply a video signal or the like to the housing 5702. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal or a power supply potential can be connected may be provided. By providing an acceleration sensor such as a gyro sensor in the housing 5702, the direction of the user's head can be detected and an image according to the direction can be displayed in the display region 5706.

[0547] A processor may be provided in one or both of the housings 5702. The processor has a function of controlling various components of the electronic device 5700, such as a camera, a wireless communication device, and a pair of display panels 5701, a function of generating an image, and the like. The processor may have a function of generating a composite image for AR display.

[0548] In addition, the wireless communication device can communicate data with external devices. For example, data transmitted from the outside can be output to the processor, and the processor can generate image data for AR display based on the data. Examples of data transmitted from the outside include image data and data including bioinformation transmitted from a biosensor device.

[0549] 24B, a method for projecting an image onto a display region 5706 of the electronic device 5700 will be described. A display panel 5701 is provided inside a housing 5702. A reflector 5712 is provided on an optical member 5703, and a reflecting surface 5713 functioning as a half mirror is provided on a portion of the optical member 5703 that corresponds to the display region 5706.

[0550] Light 5715 emitted from display panel 5701 is reflected by reflector 5712 toward optical member 5703. Inside optical member 5703, light 5715 is repeatedly totally reflected by the end face of optical member 5703, and reaches reflecting surface 5713, whereby an image is projected onto reflecting surface 5713. This allows the user to visually recognize both light 5715 reflected by reflecting surface 5713 and transmitted light 5716 transmitted through optical member 5703 (including reflecting surface 5713).

[0551] 24 shows an example in which the reflector 5712 and the reflecting surface 5713 each have a curved surface. This allows for greater freedom in optical design compared to when these surfaces are flat, and allows for a thinner optical member 5703. The reflector 5712 and the reflecting surface 5713 may also be flat.

[0552] A member having a mirror surface, preferably having a high reflectance, can be used as the reflector 5712. Also, a half mirror utilizing the reflection of a metal film may be used as the reflector surface 5713, but the transmittance of the transmitted light 5716 can be increased by using a prism utilizing total reflection.

[0553] Here, the housing 5702 may have a lens between the display panel 5701 and the reflector 5712. In this case, the housing 5702 preferably has a mechanism for adjusting the distance between the lens and the display panel 5701 and the angle between them. This makes it possible to adjust the focus and enlarge or reduce an image. For example, one or both of the lens and the display panel 5701 may be configured to be movable in the optical axis direction.

[0554] In addition, the housing 5702 preferably has a mechanism capable of adjusting the angle of the reflector 5712. It is possible to change the position of the display area 5706 where an image is displayed by changing the angle of the reflector 5712. This makes it possible to place the display area 5706 at an optimal position according to the position of the user's eyes.

[0555] In addition, the housing 5702 is preferably provided with a battery 5717 and a wireless power supply module 5718. By providing the battery 5717, the electronic device 5700 can be used without connecting a separate battery, thereby improving convenience. In addition, by providing the wireless power supply module 5718, charging can be performed wirelessly, thereby improving convenience and design. Furthermore, compared to charging by wire using a connector or the like, the risk of failure such as poor contact can be reduced, and the reliability of the electronic device 5700 can be improved.

[0556] The housing 5702 is provided with a touch sensor module 5719. The touch sensor module 5719 has a function of detecting that the outer surface of the housing 5702 is touched. FIG. 24B shows a state where the outer surface of the housing 5702 is touched with a finger 5720. The touch sensor module 5719 can detect a tap operation or a slide operation by a user and execute various processes. For example, a tap operation can execute a process such as pausing or resuming a video, and a slide operation can execute a process such as fast forwarding or rewinding. Furthermore, by providing the touch sensor module 5719 on each of the two housings 5702, the range of operations can be expanded.

[0557] Various touch sensors can be applied as the touch sensor module 5719. For example, various types can be adopted, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, an optical type, etc. In particular, it is preferable to apply a capacitance type or an optical type sensor to the touch sensor module 5719.

[0558] When an optical touch sensor is used, a photoelectric conversion element can be used as the light receiving element. The photoelectric conversion element may use an inorganic semiconductor or an organic semiconductor in the active layer.

[0559] The display device or a functional panel according to one embodiment of the present invention can be applied to the display panel 5701. Thus, the electronic device 5700 can provide an extremely high-definition display.

[0560] This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.

[0561] For example, when it is explicitly stated in this specification that X and Y are connected, the case where X and Y are electrically connected, the case where X and Y are functionally connected, and the case where X and Y are directly connected are considered to be disclosed in this specification, etc. Therefore, it is not limited to a specific connection relationship, for example, a connection relationship shown in a figure or text, and a connection relationship other than that shown in a figure or text is also considered to be disclosed in the figure or text.

[0562] Here, X and Y are objects (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.).

[0563] An example of a case where X and Y are directly connected is a case where an element that enables an electrical connection between X and Y (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display element, a light-emitting element, a load, etc.) is not connected between X and Y, and a case where X and Y are connected without an element that enables an electrical connection between X and Y (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display element, a light-emitting element, a load, etc.).

[0564] As an example of a case where X and Y are electrically connected, one or more elements (e.g., a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display element, a light-emitting element, a load, etc.) that enable the electrical connection between X and Y can be connected between X and Y. The switch has a function of controlling on / off. In other words, the switch has a function of being in a conductive state (on state) or a non-conductive state (off state) and controlling whether or not a current flows. Alternatively, the switch has a function of selecting and switching a path for the current to flow. The case where X and Y are electrically connected includes the case where X and Y are directly connected.

[0565] As an example of a case where X and Y are functionally connected, one or more circuits that enable the functional connection between X and Y (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits, step-down circuits, etc.), level shifter circuits that change the potential level of a signal, etc.), voltage sources, current sources, switching circuits, amplifier circuits (circuits that can increase the signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y. As an example, even if another circuit is sandwiched between X and Y, if a signal output from X is transmitted to Y, X and Y are considered to be functionally connected. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

[0566] In addition, when it is explicitly stated that X and Y are electrically connected, the following cases are considered to be disclosed in this specification etc.: when X and Y are electrically connected (i.e., when they are connected with another element or circuit between them), when X and Y are functionally connected (i.e., when they are functionally connected with another circuit between them), and when X and Y are directly connected (i.e., when they are connected without another element or circuit between them). In other words, when it is explicitly stated that they are electrically connected, the same content as when it is simply and explicitly stated that they are connected is considered to be disclosed in this specification etc.

[0567] For example, when the source (or the first terminal, etc.) of the transistor is electrically connected to X via (or without) Z1 and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via (or without) Z2, or when the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, another part of Z1 is directly connected to X, the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y, it can be expressed as follows.

[0568] For example, it can be expressed as "X, Y, and the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y." Or, it can be expressed as "The source (or first terminal, etc.) of the transistor is electrically connected to X, the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as "X is electrically connected to Y through the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are provided in this connection order." By using expressions similar to these examples to specify the order of connections in a circuit configuration, the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor can be distinguished and the technical scope can be determined.

[0569] Alternatively, as another way of expressing it, for example, it can be expressed as "the source (or the first terminal, etc.) of the transistor is electrically connected to X via at least a first connection path, the first connection path does not have a second connection path, the second connection path is a path between the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) of the transistor via a transistor, the first connection path is a path via Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via at least a third connection path, the third connection path does not have the second connection path, and the third connection path is a path via Z2." Alternatively, it can be expressed as "the source (or the first terminal, etc.) of the transistor is electrically connected to X via Z1 by at least a first connection path, the first connection path does not have a second connection path, the second connection path has a connection path via a transistor, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y via Z2 by at least a third connection path, and the third connection path does not have the second connection path." Alternatively, it can be expressed as follows: "The source (or first terminal, etc.) of the transistor is electrically connected to X via Z1 by at least a first electrical path, the first electrical path does not have a second electrical path, the second electrical path is an electrical path from the source (or first terminal, etc.) of the transistor to the drain (or second terminal, etc.) of the transistor, and the drain (or second terminal, etc.) of the transistor is electrically connected to Y via Z2 by at least a third electrical path, the third electrical path does not have a fourth electrical path, and the fourth electrical path is an electrical path from the drain (or second terminal, etc.) of the transistor to the source (or first terminal, etc.) of the transistor." By using an expression method similar to these examples to define the connection path in the circuit configuration, the source (or first terminal, etc.) and the drain (or second terminal, etc.) of the transistor can be distinguished to determine the technical scope.

[0570] Note that these representation methods are merely examples and are not limited to these representation methods. Here, X, Y, Z1, and Z2 are objects (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc.).

[0571] In addition, even when components that are independent on a circuit diagram are shown as being electrically connected to each other, one component may have the functions of multiple components. For example, when a part of a wiring also functions as an electrode, one conductive film has both the functions of a wiring and an electrode. Therefore, the term "electrical connection" in this specification also includes such a case where one conductive film has the functions of multiple components. [Explanation of symbols]

[0572] ANO Conductive Film CC color conversion layer C21 capacity C22 capacity GCLK signal G1 Conductive Film G2 Conductive film MD Transistor MD2 Transistor M21 Transistor N21 Node N22 Node PWC1 signal PWC2 signal S1g conductive film S2g Conductive Film SW21 Switch SW22 Switch SW23 Switch VCOM2 conductive film FPC1 Flexible Printed Circuit Board 104 Conductive film 106 Insulating film 108 Semiconductor film 108A area 108B area 108C area 112A conductive film 112B Conductive film 200 Information processing device 210 Arithmetic equipment 211 Arithmetic section 212 Storage section 213 Artificial Intelligence Department 214 Transmission Line 215 Input / Output Interface 220 I / O device 230 Display section 231 areas 233 Timing Controller 234 Expansion circuit 235 Image Processing Circuit 238 Control Unit 240 Input section 241 Detection Area 250 Detection unit 290 Communications Department 300 Transistors 305 Conductors 305a Conductors 305b Conductor 305c conductor 312 Insulators 314 Insulators 316 Insulators 322 Insulators 324 Insulators 330 Oxide 330a Oxide 330b Oxide 340 Conductors 340a Conductor 340b conductor 341 Insulators 341a Insulator 341b Insulators 342 Conductors 342a Conductors 342b Conductor 343 Oxides 343a Oxides 343b Oxide 346 Conductors 346a Conductors 346b Conductors 350 Insulator 350a Insulator 350b Insulator 360 Conductors 360a Conductor 360b conductor 371 Insulators 371a Insulators 371b Insulators 375 Insulators 380 Insulator 382 Insulators 383 Insulators 385 Insulators 501 Insulating film 501A Insulating film 501B Insulating film 501C Insulating film 501D Insulating film 504 Conductive film 505 Encapsulating material 506 Insulating film 507A Conductive film 507B Conductive film 508 Semiconductor Film 508A area 508B area 508C area 510 Base material 512A Conductive film 512B Conductive film 516 Insulating film 518 Insulating film 519B Terminal 519ga contact 519gb Contact 520 Functional Layer 520B functional layer 521 Insulating film 521B Insulating film 521C Insulating film 521D Insulating film 524 Conductive Film 530G pixel circuit 550B element 550G element 551 Electrode 551G electrode 552 Electrode 553 layers 553EM Light-emitting layer 553N layer 553P layer 591G opening 700 Function Panel 700TP Function Panel 702B pixels 702G pixels 702R pixels 703 pixels 705 Encapsulating material 770 Base material 770P functional membrane 802 Detector 5200B Information Processing Equipment 5210 Arithmetic unit 5220 I / O device 5230 Display section 5240 Input Unit 5250 Detector 5290 Communications Department 5700 Electronic equipment 5701 Display Panel 5702 Case 5703 Optical components 5704 Mounting part 5706 Display area 5707 Frame 5708 Nose pad 5712 Reflector 5713 Reflective surface 5715 light 5716 Transmitted light 5717 Battery 5718 Wireless Power Supply Module 5719 Touch Sensor Module 5720 finger

Claims

1. A first pixel is provided. The first pixel includes: A substrate; a color conversion layer above the substrate; a first element provided above the color conversion layer and having a function of emitting light; a first functional layer having a region located above the first element; the first element includes gallium nitride; the color conversion layer has a function of converting a color of light emitted by the first element into a different color; the first functional layer includes a first insulating film and a pixel circuit above the first insulating film; the first insulating film has a region sandwiched between the pixel circuit and the first element, the first insulating film includes a first film having a region covering an upper surface and a side surface of the first element, a second film having a region in contact with the upper surface of the first film and including silicon oxide, and a third film having a region in contact with the upper surface of the second film and including silicon nitride; The pixel circuit includes: a first conductive layer provided above the first insulating film and functioning as a first gate electrode of a first transistor; an oxide semiconductor layer provided above the first conductive layer and including a channel formation region of the first transistor; a second conductive layer provided above the oxide semiconductor layer and functioning as a second gate electrode of the first transistor; a second insulating film having a region located above the second conductive layer; a third conductive layer provided above the second insulating film and electrically connected to the oxide semiconductor layer and each of the first elements; A functional panel, wherein the third conductive layer is electrically connected to the first element via an opening provided in the second insulating film and an opening provided in the first insulating film.

2. A pixel having a first pixel, The first pixel includes: A substrate; a color conversion layer above the substrate; a first element provided above the color conversion layer and having a function of emitting light; a first functional layer having a region located above the first element; the first element includes gallium nitride; the color conversion layer has a function of converting a color of light emitted by the first element into a different color; the first functional layer includes a first insulating film and a pixel circuit above the first insulating film; the first insulating film has a region sandwiched between the pixel circuit and the first element, the first insulating film includes a first film having a region covering an upper surface and a side surface of the first element, a second film having a region in contact with the upper surface of the first film and including silicon oxide, and a third film having a region in contact with the upper surface of the second film and including silicon nitride; The pixel circuit includes: a first conductive layer provided above the first insulating film and functioning as a first gate electrode of a first transistor; an oxide semiconductor layer provided above the first conductive layer and including a channel formation region of the first transistor; a second conductive layer provided above the oxide semiconductor layer and functioning as a second gate electrode of the first transistor; a second insulating film having a region located above the second conductive layer; a third conductive layer provided above the second insulating film and electrically connected to the oxide semiconductor layer and the first element; a third insulating film having a region in contact with a lower surface of the second insulating film and a region located above the oxide semiconductor layer; the second conductive layer has a region located within an opening provided in the third insulating film; A functional panel, wherein the third conductive layer is electrically connected to the first element via an opening provided in the second insulating film and an opening provided in the first insulating film.

3. In claim 1 or 2, The functional panel, wherein the oxide semiconductor layer contains indium.

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