Display panel and display device including same

Abstract

To provide a display panel which maintains rigidity while a glass substrate is being processed and holes of various shapes are being formed, and to provide a display device having the same.SOLUTION: A display panel according to an embodiment comprises a glass substrate having a display area and a light-transmitting area, a circuit unit disposed in the display area, and an element unit disposed on the circuit unit, where the glass substrate includes a first opening provided at a position corresponding to the light-transmitting area. The display panel includes a first etch-stop layer disposed on the glass substrate to surround the first opening. A display device having the display panel is also disclosed.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The embodiments relate to a display panel and a display device including the same. [Background technology]

[0002] Electroluminescence displays are broadly divided into inorganic light emitting displays and organic light emitting displays depending on the material of the light emitting layer. Active matrix type organic light emitting displays include organic light emitting diodes (hereinafter referred to as OLEDs) that emit light by themselves, and have the advantages of a fast response speed, light emitting efficiency, brightness, and wide viewing angle. In organic light emitting displays, OLEDs are formed in each pixel. OLED displays not only have a fast response speed and excellent light emitting efficiency, brightness, viewing angle, etc., but also have excellent contrast ratio and color reproduction rate as they can express black gradations as perfect black.

[0003] Recently, organic light emitting display devices have been implemented on a plastic substrate, which is a flexible material, but may also be implemented on a glass substrate due to various issues.

[0004] However, when it is implemented on a glass substrate, when a notch or round is processed or a hole is formed inside the panel, the rigidity is reduced and it is difficult to process various shapes. Summary of the Invention [Problem to be solved by the invention]

[0005] The embodiments provide a display panel that maintains rigidity even when a glass substrate is processed and holes of various shapes are formed therein, and a display device including the same.

[0006] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0007] A display panel according to one aspect of the present invention includes a glass substrate having a display area and a light-transmitting area, a circuit section disposed on the display area, and an element section disposed on the circuit section, the glass substrate including a first opening disposed at a position corresponding to the light-transmitting area, and a first etching prevention layer disposed on the glass substrate and surrounding the first opening.

[0008] A display panel according to another feature of the present invention includes a glass substrate having a display area and a light-transmitting area, a circuit section arranged on the display area, and an element section arranged on the circuit section, the glass substrate including a first opening arranged at a position corresponding to the light-transmitting area and a second inclined surface formed on a side surface, and the inclination angle of the inner surface of the first opening and the inclination angle of the second inclined surface are the same. Effect of the Invention

[0009] According to the embodiment, there is an advantage that holes of various shapes can be simultaneously formed in the panel when cutting the mother glass substrate.

[0010] Furthermore, it is possible to prevent the etching solution from penetrating into the inside of the panel when etching the glass substrate.

[0011] The effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims. [Brief description of the drawings]

[0012] [Figure 1] 1 is a conceptual diagram of a display device according to an embodiment of the present invention; [Diagram 2] 2 is a cross-sectional view taken along the line II' of FIG. 1. [Diagram 3]FIG. 3 is an enlarged view of part A in FIG. 2. [Figure 4] FIG. 3 is an enlarged view of part B in FIG. 2. [Figure 5a] This is a modified example of FIG. [Figure 5b] This is a modified example of FIG. [Figure 6] 1 is a diagram showing an etch stop layer surrounding a light-transmitting region and an edge region of a substrate. [Figure 7a] 1 is a diagram showing openings of various shapes in a substrate; [Figure 7b] 1 is a diagram showing openings of various shapes in a substrate; [Figure 7c] 1 is a diagram showing openings of various shapes in a substrate; [Figure 7d] 1 is a diagram showing openings of various shapes in a substrate; [Figure 8] 1 is a diagram showing a cross section of a display region. [Figure 9] 1 is a diagram showing a display panel according to a first embodiment of the present invention. [Figure 10] 1 is a diagram showing a display panel before a light-transmitting region is formed. [Figure 11a] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 11b] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 11c] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 11d] 1 is a view showing a state in which a coating layer is entirely filled in a first opening. [Figure 12a] 1 is a diagram showing various structures of an etching prevention layer; [Figure 12b] 1 is a diagram showing various structures of an etching prevention layer; [Figure 13] 13 is a diagram showing a display panel according to a second embodiment of the present invention. [Figure 14a] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 14b] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 14c] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 15] 13 is a diagram showing a display panel according to a third embodiment of the present invention. [Figure 16] 1 is a diagram showing a display panel before a light-transmitting region is formed. [Figure 17a] 11 is a diagram showing a process of forming an etching prevention layer in a dummy region. [Figure 17b] 11 is a diagram showing a process of forming an etching prevention layer in a dummy region. [Figure 17c] 11 is a diagram showing a process of forming an etching prevention layer in a dummy region. [Figure 18a] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 18b] 1 is a diagram showing a process of etching a substrate to form a light-transmitting region in a display panel; [Figure 19] This is a variation of FIG. 18a. [Figure 20] FIG. 13 is a conceptual diagram of a display device according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] The advantages and features of the present invention, as well as the methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms, but the embodiments are provided to complete the disclosure of the present invention and to fully inform those skilled in the art of the present invention of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0014] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are merely examples, and the present invention is not limited to the illustrated matters. The same reference numerals refer to the same components throughout the specification. In addition, in the description of the present invention, if it is determined that a detailed description of related publicly known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

[0015] When the terms "including," "having," "consisting of," etc. are used in this specification, other parts may be added unless "only" is used. When an element is expressed in the singular, it includes the plural unless otherwise expressly stated.

[0016] In interpreting elements, they are interpreted as including a margin of error even if there is no explicit mention otherwise.

[0017] When describing a positional relationship, for example when the positional relationship between two parts is described using "above", "at the top", "below", "next to", etc., since "immediately" or "directly" is not used, there may be one or more other parts located between the two parts.

[0018] In the description of the embodiments, the terms "first", "second", etc. are used to describe various components, but these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, the first component referred to below may be the second component within the technical concept of the present invention.

[0019] Like numbers refer to like elements throughout the specification.

[0020] The features of the various embodiments may be partially or fully combined or combined with each other, and various technical interlocking and operation may be possible, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship.

[0021] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0022] Fig. 1 is a conceptual diagram of a display device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along the line II' in Fig. 1. Fig. 3 is an enlarged view of a portion A in Fig. 2. Fig. 4 is an enlarged view of a portion B in Fig. 2.

[0023] 1 and 2, a display device 1 may include a display area DA for outputting an image and a light-transmitting area TA for receiving light. The light-transmitting area TA may be, but is not limited to, a hole structure for allowing light to be incident on a sensor 40 disposed under the display panel.

[0024] The display panel may include a circuit unit 13 disposed on a substrate 10, and an element unit (light-emitting unit) 15 disposed on the circuit unit 13. A polarizing plate 19 may be disposed on the element unit 15, and a cover glass 20 may be disposed on the polarizing plate 19. In addition, a touch unit 18 may be disposed between the element unit 15 and the polarizing plate 19.

[0025] According to the embodiment, the substrate 10 may include a glass material. That is, the substrate according to the embodiment may have a certain strength. However, the present invention is not limited thereto, and the substrate 10 may include a flexible material such as polyimide.

[0026] The circuit unit 13 may include pixel circuits connected to wiring such as data lines, gate lines, and power lines, and a gate driver connected to the gate lines.

[0027] The circuit unit 13 may include circuit elements such as transistors implemented as TFTs (Thin Film Transistors) and capacitors, etc. The wiring and circuit elements of the circuit unit 13 may be implemented with a plurality of insulating layers, two or more metal layers separated by insulating layers, and an active layer including a semiconductor material.

[0028] The device unit 15 may have a device structure such as an OLED (Organic Light Emitting Diode) display, a quantum dot display, a micro LED (Micro Light Emitting Diode) display, etc. Hereinafter, an OLED structure including an organic compound layer will be described as an example.

[0029] The organic compound layer may include, but is not limited to, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL).

[0030] When a voltage is applied to the anode and cathode of the OLED, holes that have passed through the hole transport layer HTL and electrons that have passed through the electron transport layer ETL are transferred to the emission layer EML to form excitons, which can then emit visible light.

[0031] The element section 15 can further include a color filter array that is disposed on the pixels and selectively transmits red, green, and blue wavelengths.

[0032] The element unit 15 may be covered by a protective film, which may be covered by a sealing unit 17. The protective film and the sealing unit 17 may have a structure in which organic films and inorganic films are alternately laminated. The inorganic film can block the penetration of moisture and oxygen. The organic film can flatten the surface of the inorganic film. Therefore, when organic films and inorganic films are laminated in multiple layers, the path of moisture and oxygen movement becomes longer compared to a single layer, and the penetration of moisture / oxygen that affects the element unit 15 can be effectively blocked.

[0033] A polarizing plate 19 may be disposed on the device unit 15. The polarizing plate 19 may improve the outdoor visibility of the display device. The polarizing plate 19 may reduce light reflected from the surface of the display panel and block light reflected from the metal of the circuit unit 13 to improve brightness of the pixels. The polarizing plate 19 may be implemented as a polarizing plate in which a linear polarizing plate 19 and a phase delay film are bonded, or a circular polarizing plate.

[0034] The light-transmitting areas TA may be formed between the display areas DA. The first non-display area NDA1 may be disposed to surround the light-transmitting areas TA. The first non-display area NDA1 may have a plurality of dam structures to protect the light-emitting elements of the display area DA from moisture or oxygen that may flow in from the light-transmitting areas TA.

[0035] The light-transmitting area TA may have a through-hole structure for injecting light into an imaging unit such as a camera, but is not necessarily limited to this, and the light-transmitting area TA may also have low-density pixels arranged therein.

[0036] The substrate 10 may include a first opening 11 disposed in the light-transmitting region TA. The first opening 11 may have a tapered shape in which the width becomes narrower as it approaches the cover glass 20. However, this is not necessarily limited thereto, and the first opening 11 may have an inverse tapered shape in which the width becomes wider as it approaches the cover glass 20, or may have a constant width in the thickness direction. The tapered shape of the first opening 11 may be variously modified depending on the type of etchant and the etching method.

[0037] 2, a first etch stop layer ES1 may be disposed on a first opening 11 of a substrate 10. Also, a second etch stop layer ES2 may be disposed on an edge of the substrate 10. The first etch stop layer ES1 and the second etch stop layer ES2 may prevent an etchant from penetrating into an interior of a panel when etching the substrate 10.

[0038] The first etching stop layer ES1 and the second etching stop layer ES2 may include an organic material that is resistant to an etching solution. Exemplarily, the etching stop layer may include one selected from the group consisting of polyester-based polymers, silicon-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof. However, the etching stop layer is not necessarily limited thereto, and may include various materials that are resistant to an etching solution.

[0039] The first etching stop layer ES1 and the second etching stop layer ES2 may be formed by extending from at least one of the layers constituting the circuit unit 13, the element unit 15, the encapsulation unit 17, and the touch unit 18. That is, the first etching stop layer ES1 and the second etching stop layer ES2 may be dummy layers extending from the circuit unit 13, the element unit 15, the encapsulation unit 17, and the touch unit 18. With this configuration, the etching stop layers can be formed without adding a separate process.

[0040] According to the embodiment, the first etch stop layer ES1 may include a protrusion P1 protruding inwardly of the first opening 11. The protrusion P1 may be defined as a portion protruding inwardly from an upper surface of the first opening 11. Such a protrusion P1 may be formed during the process of laser cutting the etch stop layer.

[0041] A coating layer 30 may be formed on the rear surface of the substrate 10. The coating layer 30 may be formed of an organic material, such as a polyester-based polymer or an acrylic-based polymer.

[0042] A portion of the coating layer 30 may be formed on an inner surface of the first opening 11. In this case, a portion of the coating layer 30 may be disposed up to a lower surface of the protrusion P1 of the first etching prevention layer ES1. That is, the protrusion P1 of the first etching prevention layer ES1 may be disposed on an upper surface of the coating layer 30 formed in the first opening 11.

[0043] The first inclined surface 11a of the first opening 11 and the side surface S11 of the protrusion P1 of the first etching prevention layer may have different inclinations. Exemplarily, the inclination angle of the side surface S11 of the protrusion P1 may be larger than the inclination angle θ1 of the first inclined surface 11a. This is because the first opening 11 is etched by an etchant to have a tapered shape, whereas the first etching prevention layer ES1 is cut by a laser to form a relatively vertical cross section. The side surface S21 of the end 31 of the coating layer 30 disposed under the protrusion P1 may have the same inclination angle as the side surface S11 of the protrusion P1.

[0044] However, this is not necessarily limited to this, and if the first opening 11 has an inverted tapered shape in which the width increases as it approaches the cover glass 20, the first inclined surface 11a may be even greater than the inclination of the side surface of the first etching prevention layer ES1.

[0045] 2 and 4, a second non-display area NDA2 may be disposed at an edge of the display panel, The second non-display area NDA2 may be a margin required when separating a plurality of panels from a mother glass substrate.

[0046] The substrate 10 may include a second inclined surface 12a formed on the edge. The second inclined surface 12a may have the same angle and depth as the first inclined surface 11a formed in the first opening 11. Since the first opening 11 and the second inclined surface 12a are formed simultaneously by the etching solution, the inclination angle and etching depth may be the same.

[0047] According to the embodiment, the first opening 11 can be simultaneously formed in the substrate of each display panel during the process of etching the mother glass substrate using an etching solution and separating it into a plurality of display panels. Therefore, the opening can be formed without reducing the rigidity and without additional equipment. Also, openings of various shapes can be formed by changing the mask pattern.

[0048] The second etching prevention layer ES2 disposed in the second non-display area NDA2 can prevent an etchant from penetrating into the interior of the panel when etching the mother glass substrate to separate a plurality of display panels.

[0049] The second etching stop layer ES2 may extend from at least one of the circuit unit 13, the device unit 15, the encapsulation unit 17, and the touch unit 18. Alternatively, the second etching stop layer may be formed simultaneously during the process of forming at least one of the circuit unit 13, the device unit 15, the encapsulation unit 17, and the touch unit 18. With this configuration, the second etching stop layer ES2 can be formed without adding a separate process.

[0050] According to the embodiment, the second etching prevention layer ES2 may include a protrusion P2 protruding outward from the second inclined surface 12a. Such protrusion P2 can prevent the display panel from being damaged when the second etching prevention layer ES2 is laser cut.

[0051] The coating layer 30 may be formed on the second inclined surface 12a. At this time, a portion of the coating layer 30 may extend to the lower surface of the protrusion P2.

[0052] The second inclined surface 12a of the substrate 10 and the side surface S12 of the protrusion P2 of the second etch stop layer ES2 may have different inclinations. Exemplarily, the inclination angle of the side surface S12 of the protrusion P2 may be greater than the inclination angle of the second inclined surface 12a. This is because the second inclined surface 12a is etched by an etchant to have a tapered shape, whereas the side surface S12 of the second etch stop layer ES2 is formed by laser cutting. The side surface S22 of the end 31 of the coating layer 30 disposed under the protrusion P2 may have the same inclination angle as the side surface S12 of the protrusion P2.

[0053] However, the present invention is not necessarily limited to this. When the second inclined surface 12a has an inverse tapered shape, the second inclined surface 12a may have a greater inclination than the second etching stop layer ES2.

[0054] 5a, the first etching prevention layer ES1 may include first to third sub-layers ES11, ES12, and ES13. The first sub-layer ES11 may be an inorganic film, and the third sub-layer ES13 may be an organic film. Since the organic film has a relatively weak adhesive strength with the glass substrate 10, the inorganic film can improve the adhesive strength between the substrate 10 and the organic film.

[0055] The second sub-layer ES12 may be a metal layer. The second sub-layer ES12 may include molybdenum (Mo), which has a relatively high chemical resistance to the etching solution compared to the first sub-layer ES11. However, the second sub-layer ES12 is not necessarily limited thereto, and may be omitted as necessary.

[0056] The coating layer 30 may entirely fill the first opening 11. Therefore, when the first etching prevention layer ES1 is cut with a laser, the coating layer 30 formed in the first opening 11 may also be cut to have the same cross section. Therefore, the cross section of the first etching prevention layer ES1 and the cross section of the coating layer 30 formed in the first opening 11 may be parallel to each other.

[0057] Referring to Fig. 5b, the second etching prevention layer ES2 may include a first sub-layer ES21 and a second sub-layer ES22. The first sub-layer ES21 may be an inorganic film, and the second sub-layer ES22 may be an organic film. However, the present invention is not limited thereto, and the second etching prevention layer may have a structure as shown in Fig. 5a.

[0058] The first etching stop layer ES1 and the second etching stop layer ES2 may have the same or different layer structures. For example, it may be possible to extend a part of a layer in the display area DA to the first non-display area NDA1, but it may be difficult to extend it to the second non-display area NDA2. In this case, the layer structures of the first etching stop layer ES1 and the second etching stop layer ES2 may be different.

[0059] In addition, the first etching prevention layer ES1 may be formed to extend continuously in the display area DA, while the second etching prevention layer ES2 may be formed to be disconnected from the display area DA, or conversely, the second etching prevention layer ES2 may be formed to extend in the display area DA, while the first etching prevention layer ES1 may be formed to be disconnected from the display area DA.

[0060] Fig. 6 is a diagram showing a shape in which an etching prevention layer surrounds a light-transmitting region, and Figs. 7a to 7d are diagrams showing various shapes of light-transmitting regions.

[0061] 6, the first etch stop layer ES1 may be disposed to entirely surround the periphery of the first opening 11. Also, the second etch stop layer ES2 may be disposed to entirely surround the outer periphery of the display panel.

[0062] According to the embodiment, the first etching prevention layer ES1 is arranged to completely surround the periphery of the first opening 11, and the second etching prevention layer ES2 is arranged to completely surround the outer peripheral surface of the display panel, so that when a through hole is formed on the inside of the substrate at the same time as cutting the mother glass substrate, it is possible to prevent the etching solution from penetrating into the inside of the panel.

[0063] 7a to 7d, openings 11 of various shapes can be formed in a glass substrate 10 using wet etching. Therefore, compared to existing scribing, breaking, and grinding techniques, it is advantageous in that it is possible to form various openings while maintaining the rigidity of the substrate. Also, it is advantageous in that the openings 11 can be formed while processing the side surface of the substrate 10 in order to form a notch or rounding on the side surface of the substrate 10.

[0064] FIG. 8 is a diagram showing a cross section of the display area.

[0065] Referring to FIG. 8, the display area DA may include a substrate 10, a multi-buffer layer 102, and an active buffer layer 103, and a first transistor 120 may be disposed on the active buffer layer 103.

[0066] A first semiconductor layer 123 constituting a first transistor 120 and a first gate electrode 122 and a lower gate insulating film 104 for insulation may be disposed on the first semiconductor layer 123. A first lower interlayer insulating film 105 and a second lower interlayer insulating film 106 may be sequentially disposed on the first gate electrode 122, and an upper buffer layer 107 may be disposed.

[0067] The multi-buffer layer 102 can retard the diffusion of moisture or oxygen that has penetrated into the substrate 10, and can be formed by alternately stacking at least one layer of silicon nitride (SiNx) and silicon oxide (SiOx).

[0068] The active buffer layer 103 can protect the first semiconductor layer 123 and block various types of defects from the substrate 10. The active buffer layer 103 can be made of a-Si, silicon nitride (SiNx), silicon oxide (SiOx), or the like.

[0069] The first semiconductor layer 123 of the first transistor 120 may be made of a polycrystalline semiconductor layer, and the first semiconductor layer 123 may include a channel region, a source region, and a drain region.

[0070] A polycrystalline semiconductor layer has a higher mobility than an amorphous semiconductor layer and an oxide semiconductor layer, and therefore consumes less energy and has excellent reliability. Due to these advantages, a polycrystalline semiconductor layer can be used in a driving transistor.

[0071] The first gate electrode 122 may be disposed on the lower gate insulating film 104 and may be disposed so as to overlap the first semiconductor layer 123 .

[0072] A second transistor 130 may be disposed on the upper buffer layer 107 , and a light-shielding layer 136 may be disposed below a region corresponding to the second transistor 130 .

[0073] A light-shielding layer 136 may be disposed on the first lower interlayer insulating film 105 in an area corresponding to the second transistor 130, and the second semiconductor layer 133 of the second transistor 130 may be disposed on the second lower interlayer insulating film 106 and the upper buffer layer 107 so as to overlap the light-shielding layer 136.

[0074] An upper gate insulating layer 137 for insulating the second gate electrode 132 and the second semiconductor layer 133 may be disposed on the second semiconductor layer 133 .

[0075] The upper interlayer insulating film 108 may be disposed on the second gate electrode 132. The first gate electrode 122 and the second gate electrode 132 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but are not limited thereto.

[0076] The first and second lower interlayer insulating films 105 and 106 may be formed of an inorganic film having a higher hydrogen particle content than the upper interlayer insulating film 108. For example, the first and second lower interlayer insulating films 105 and 106 may be made of silicon nitride (SiNx) formed by a deposition process using NH3 gas, and the upper interlayer insulating film 108 may be made of silicon oxide (SiOx). The hydrogen particles contained in the first and second lower interlayer insulating films 105 and 106 may diffuse into the polycrystalline semiconductor layer during a hydrogenation process to fill voids in the polycrystalline semiconductor layer with hydrogen. As a result, the polycrystalline semiconductor layer may be stabilized, and deterioration of the characteristics of the first transistor 120 may be prevented.

[0077] After the activation and hydrogenation processes of the first semiconductor layer 123 of the first transistor 120, the second semiconductor layer 133 of the second transistor 130 may be formed, and in this case, the second semiconductor layer 133 may be formed of an oxide semiconductor. Since the second semiconductor layer 133 is not exposed to the high temperature atmosphere of the activation and hydrogenation processes of the first semiconductor layer 123, damage to the second semiconductor layer 133 may be prevented, and reliability may be improved.

[0078] After the upper interlayer insulating film 108 is disposed, a first source contact hole 125S and a first drain contact hole 125D may be formed corresponding to the source and drain regions of the first transistor, and a second source contact hole 135S and a second drain contact hole 135d may be formed corresponding to the source and drain regions of the second transistor 130, respectively.

[0079] The first source contact hole 125S and the first drain contact hole 125D may be formed continuously from the upper interlayer insulating film 108 to the lower gate insulating film 104, and a second source contact hole 135S and a second drain contact hole 135D may be formed in the second transistor 130.

[0080] The first source electrode 121 and the first drain electrode 124 corresponding to the first transistor 120 and the second source electrode 131 and the second drain electrode 134 corresponding to the second transistor 130 can be formed simultaneously, thereby reducing the number of processes for forming the source and drain electrodes of the first transistor 120 and the second transistor 130.

[0081] The first source and drain electrodes 121, 124 and the second source and drain electrodes 131, 134 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof, but are not limited thereto.

[0082] The first source and drain electrodes 121, 124 and the second source and drain electrodes 131, 134 may have a three-layer structure, for example, the first source electrode 121 may be composed of a first layer 121a, a second layer 121b, and a third layer 121c, and the other source and drain electrodes may have the same structure.

[0083] A storage capacitor 140 may be disposed between the first transistor 120 and the second transistor 130. The storage capacitor 140 may be formed by overlapping a storage lower electrode 141 and a storage upper electrode 142 with a first lower interlayer insulating film 105 interposed therebetween.

[0084] The storage lower electrode 141 is located on the lower gate insulating film 104, and may be formed in the same layer and made of the same material as the first gate electrode 122. The storage upper electrode 142 may be electrically connected to the pixel circuit through a storage supply line 143. The storage upper electrode 142 may be formed in the same layer and made of the same material as the light blocking layer 136. The storage upper electrode 142 is exposed through a storage contact hole 144 penetrating the second lower interlayer insulating film 106, the upper buffer layer 107, the upper gate insulating layer 137, and the upper interlayer insulating film 108, and is connected to the storage supply line 143.

[0085] The storage upper electrode 142 is separated from the light blocking layer 136, but may be formed as an integrated type connected to each other. The storage supply line 143 may be formed of the same material on the same plane as the first source and drain electrodes 121, 124 to the second source and drain electrodes 131, 134, so that the storage supply line 143 can be formed simultaneously with the first source and drain electrodes 121, 124 to the second source and drain electrodes 131, 134 in the same mask process.

[0086] A protective layer 109 may be formed by depositing an inorganic insulating material such as SiNx or SiOx over the entire surface of the substrate 10 on which the first source and drain electrodes 121, 124, the second source and drain electrodes 131, 134, and the storage supply line 143 are formed.

[0087] A first planarization layer 110 may be formed on the protective film 109. In particular, the first planarization layer 110 may be disposed by coating an organic insulating material, such as an acrylic resin, on the entire surface of the protective film 109.

[0088] A passivation film 109 and a first planarization layer 110 are disposed, and a contact hole exposing a first source electrode 121 or a first drain electrode 124 of a first transistor 120 may be formed through a photolithography process. A connection electrode 145 made of a material such as Mo, Ti, Cu, AlNd, Al, and Cr or an alloy thereof may be disposed in a contact hole region exposing the first drain electrode 124.

[0089] A second planarization layer 111 may be disposed on the connecting electrode 145, and a contact hole exposing the connecting electrode 145 may be formed in the second planarization layer 111, so that the light emitting device 150 connected to the first transistor 120 may be disposed therein.

[0090] The light emitting element 150 may include an anode electrode 151 connected to the first drain electrode 124 of the first transistor 120, at least one light emitting stack 152 formed on the anode electrode 151, and a cathode electrode 153 formed on the light emitting stack 152.

[0091] The light-emitting stack 152 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. In a tandem structure in which multiple light-emitting layers are stacked, a charge generation layer may be additionally disposed between the light-emitting layers. In the case of the light-emitting layer, each subpixel may emit a different color.

[0092] The anode electrode 151 may be connected to the connecting electrode 145 exposed through a contact hole penetrating the second planarization layer 111. The anode electrode 151 may be formed in a multi-layer structure including a transparent conductive film and an opaque conductive film with high reflectance. The transparent conductive film may be made of a material with a relatively high work function value such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the opaque conductive film may be formed in a single layer or multi-layer structure including Al, Ag, Cu, Pb, Mo, Ti, or an alloy thereof.

[0093] For example, the anode electrode 151 may be formed in a structure in which a transparent conductive film, an opaque conductive film, and a transparent conductive film are sequentially laminated, or in a structure in which a transparent conductive film and an opaque conductive film are sequentially laminated.

[0094] The anode electrode 151 may be disposed on the second planarization layer 111 so as to overlap not only the light-emitting area provided by the bank 154 but also the pixel circuit area in which the first and second transistors 120, 130 and the storage capacitor 140 are disposed, thereby increasing the light-emitting area.

[0095] The light-emitting stack 152 may be formed by stacking a hole transport layer, an organic light-emitting layer, and an electron transport layer in this order or in the reverse order on the anode electrode 151. Alternatively, the light-emitting stack 152 may further include a charge generation layer and may include first and second light-emitting stacks facing each other with a charge generation layer therebetween.

[0096] The bank 154 may be formed to expose the anode electrode 151. The bank 154 may be formed of an organic material such as photoacrylic and may be a semi-transparent material, but is not limited thereto, and may be formed of an opaque material to prevent light interference between sub-pixels.

[0097] The cathode electrode 153 may be formed on an upper surface of the light emitting stack 152 to face the anode electrode 151 across the light emitting stack 152. When the cathode electrode 153 is applied to a top emission type organic light emitting display device, it may be formed of a transparent conductive film formed by thinly depositing indium tin oxide (ITO), indium zinc oxide (IZO) or magnesium silver (Mg-Ag).

[0098] An encapsulant 17 for protecting the light emitting element 150 may be formed on the cathode electrode 153. The light emitting element 150 may react with external moisture or oxygen due to the organic properties of the light emitting stack 152, causing dark spots or pixel shrinkage, so the light emitting element 150 may be disposed on the cathode electrode 153 to prevent this.

[0099] The sealing portion 17 may be composed of a first inorganic insulating film 171 , a foreign matter compensation layer 172 , and a second inorganic insulating film 173 .

[0100] The touch unit 18 may be disposed on the upper portion of the encapsulation unit 17. The touch unit 18 may include a first touch-planarization layer 181, a touch electrode 182, and a second touch-planarization layer 183. The first touch-planarization layer 181 and the second touch-planarization layer 183 may be disposed to eliminate a step at a point where the touch electrode 182 is disposed and to provide good electrical insulation.

[0101] According to the embodiment, the first transistor 120 made of low-temperature polysilicon and the second transistor 130 made of an oxide semiconductor are disposed in different layers, so that thin film transistors TFT having different driving characteristics can be disposed in the display device 100. However, this is not necessarily limited thereto, and only thin film transistors having the same driving characteristics may be used.

[0102] Fig. 9 is a view showing a display panel according to a first embodiment of the present invention, Fig. 10 is a view showing a display panel before a light-transmitting region is formed, and Figs. 11a to 11c are views showing a process of etching a substrate to form a light-transmitting region in the display panel.

[0103] 9, the first non-display area NDA1 may be disposed to surround the light-transmitting area TA, and may include a bezel area NDA11 in which a plurality of dam portions and blocking portions are alternately disposed, and a dummy area NDA12 disposed between the bezel area NDA11 and the light-transmitting area TA.

[0104] The bezel area NDA11 can form a dam portion and a prevention portion by using a plurality of layers extending in the display area DA.

[0105] For example, the first prevention unit 210 may include a first structure 211, a second structure 212, and a third structure 213, and the second prevention unit 220 may include a fifth structure 221 and a sixth structure 222. However, the number of structures of the dam unit and the prevention unit may be variously modified.

[0106] The first dam 301, the first prevention portion 210 and the second prevention portion 220 may be arranged in the shape of a closed loop surrounding the light-transmitting area TA. With this configuration, it is possible to prevent moisture from penetrating into the display area DA through the light-transmitting area TA.

[0107] The dummy area NDA12 may be an area formed for a margin during laser cutting. Without the dummy area NDA12, the bezel area NDA11 may be damaged during laser cutting and may be vulnerable to moisture penetration. The dummy area NDA12 allows only a minimum number of layers to be disposed on the substrate 10 so that laser cutting is easy.

[0108] In the embodiment, the etching prevention layer may be defined as an organic film, an inorganic film, or a metal layer disposed in the dummy area NDA12. That is, the organic film, the inorganic film, or the metal layer formed in the display area DA and the non-display area NDA may also be formed in the dummy area NDA12 to function as an etching prevention layer. Therefore, although it is the same layer, the reference numerals may be different depending on the area in which it is disposed.

[0109] In the present invention, the etch-preventing layer may include a plurality of sub-layers. The etch-preventing performance of the plurality of sub-layers may be different. For example, a sub-layer made of an inorganic material may be etched by an etchant over time, whereas a sub-layer made of an organic material or a metal may have a relatively excellent etch-preventing performance compared to a sub-layer made of an inorganic material.

[0110] In this embodiment, the first sub-layer ES11 may be formed by extending the first inorganic insulating layer 171 and the second inorganic insulating layer 173 of the encapsulation part, and the second sub-layer ES12 may be formed by extending the first touch planarization layer 181 and the second touch planarization layer 183 of the touch part. However, this is merely an example, and various inorganic films and insulating films of the display area DA may be used as the etching prevention layer.

[0111] The light-transmitting region TA may include a first light-transmitting region D1 defined by a first opening 11 in the substrate 10, a second light-transmitting region D2 defined by a first sub-layer ES11, and a third light-transmitting region D3 defined by a second sub-layer ES12.

[0112] The first light-transmitting region D1 formed by the first opening 11 of the substrate 10 is gradually narrowed in width toward the top, and the third light-transmitting region D3 may be narrower than the minimum width of the first light-transmitting region D1. Also, the second light-transmitting region D2 may have a width wider than the width of the third light-transmitting region D3. However, this is not necessarily limited thereto, and when the coating layer 30 fills the entire first opening 11, the first light-transmitting region D1, D2, and D3 may have the same width (see FIG. 5a).

[0113] According to the embodiment, the substrate 10 is etched using an etchant, whereas the first etching prevention layer ES1 is cut using a laser, so that the width of the light-transmitting region TA may vary in the thickness direction. Also, since the first etching prevention layer ES1 exposed at the top of the first opening 11 is cut using a laser, a part of the first etching prevention layer ES1 may remain inside the first opening 11 to form a protrusion P1.

[0114] 10, a dummy dam structure OB1 may be formed in a region where a light-transmitting region TA is to be formed. Therefore, in the lower part of the substrate 10, a back surface is etched to remove the dummy dam structure OB1 of the light-transmitting region TA, and in the upper part, a first etching prevention layer surrounding the dummy dam structure OB1 is cut using a laser to remove the dummy dam structure OB1, thereby forming the light-transmitting region TA. At this time, a position S1 where the back surface of the substrate 10 is etched may be the same as a position S1 where the first etching prevention layer is cut using a laser.

[0115] 11a, a first etch stop layer ES1 including a first sub-layer ES11 and a second sub-layer ES12 may be disposed on the substrate 10 in the dummy area NDA12. Also, a second etch stop layer ES2 including a first sub-layer ES21 and a second sub-layer ES22 may be disposed in the second non-display area NDA2, which is the edge of the substrate 10. The structure of the first etch stop layer ES1 and the structure of the second etch stop layer ES2 may be the same, but are not necessarily limited thereto, and may be different from each other.

[0116] 11b, when the back surface of the substrate 10 in the dummy area NDA12 is exposed to an etching solution, the portion not covered by the mask may be etched by the etching solution. When the substrate 10 is etched, the etching solution comes into contact with the first sub-layer ES11, and the first sub-layer ES11 may be etched over time. Similarly, the first sub-layer ES21 in the second non-display area NDA2 may be etched.

[0117] 11c, a coating layer 30 may be formed on the rear surface of the substrate 10. At this time, the coating layer 30 may be formed entirely inside the first opening 11 formed in the dummy area NDA12 and inside the second opening 12 disposed in the second non-display area NDA2. Then, the first etching prevention layer ES1 and the second etching prevention layer ES2 may be cut by irradiating a laser L1. Thus, a plurality of panels may be separated from the mother glass substrate, and a light-transmitting area TA may be formed in each display panel.

[0118] At this time, since the first sub-layer ES11, which is an inorganic material, has already been removed from the laser irradiation position, the phenomenon in which cracks propagate in the inorganic film during laser cutting can be improved.

[0119] 11d, the coating layer 30 may be entirely formed inside the first opening 11 and the second opening 12. Therefore, the cross section of the first opening 11 and the second opening 12 may be flat in the shape of a straight line. Therefore, the width of the light-transmitting region TA may be constant in the thickness direction.

[0120] 12a, the shape of the first sub-layer ES11 formed of the inorganic film may vary depending on the thickness of the inorganic film or the etching time. Exemplarily, the width of the lower layer 171a of the first sub-layer ES11 that is etched may be larger than the width of the upper layer 172a of the first sub-layer ES11 that is etched. Also, a portion of the upper layer 172a of the first sub-layer ES11 may not be etched.

[0121] Referring to FIG. 12b, the etch stop layer may include a sub-layer made of a metal film in addition to an inorganic film and an organic film.

[0122] For example, the first sub-layer ES11 may be made of an inorganic material, the second sub-layer ES12 may be made of a metal, and the third sub-layer ES13 may be made of an organic material. Each sub-layer may be formed together when forming a plurality of layers in the display area DA.

[0123] For example, the first sub-layer ES11 may be formed simultaneously with the formation of inorganic layers such as a buffer layer, a gate insulating layer, and a planarization layer in the display area DA. The second sub-layer ES12 may be formed simultaneously with the formation of various metal layers such as a gate electrode and an anode electrode. In addition, the third sub-layer ES13 may be formed simultaneously with the formation of organic layers such as a planarization layer covering the source / drain electrodes, a bank, a spacer, and a sealing part 17.

[0124] Fig. 13 is a view showing a display panel according to a second embodiment of the present invention, and Figs. 14a to 14c are views showing a process of etching a substrate to form a light-transmitting region in the display panel.

[0125] Referring to FIG. 13, in this embodiment, the first sub-layer ES11 of the first etching prevention layer ES1 may be formed by extending an inorganic film such as an active buffer layer, the second sub-layer ES12 may be formed by extending an organic film such as a first or second planarization layer or a bank layer, the third sub-layer ES13 may be formed by extending the first or second inorganic insulating film of the sealing portion, and the fourth sub-layer ES14 may be formed by extending an organic film such as the first or second touch planarization layer of the touch portion.

[0126] According to this configuration, the first etching stop layer ES1 has a stacked structure of the first inorganic film / the first organic film / the second inorganic film / the second organic film, and thus the etching stop effect may be more excellent. However, this is not necessarily limited thereto, and the first etching stop layer ES1 may have only an inorganic film / organic film structure.

[0127] Referring to FIG. 14a, the first sub-layer ES11, the second sub-layer ES12, the third sub-layer ES13, and the fourth sub-layer ES14 may be stacked in order on the substrate 10 in the dummy area NDA12. As described above, the first sub-layer ES11 may be an organic film, the second sub-layer ES12 may be an inorganic film, the third sub-layer ES13 may be an organic film, and the fourth sub-layer ES14 may be an inorganic film. The second etching prevention layer ES2 disposed in the second non-display area NDA2 may also have the same layer structure. The portion not covered by the mask may be etched by the etching solution. When the substrate 10 is etched, the first sub-layer ES11 comes into contact with the etching solution, and the first sub-layer ES11 may be etched over time.

[0128] 14c, a coating layer 30 may be formed on the rear surface of the substrate 10. In this case, the coating layer 30 may also be formed inside the first opening 11 formed in the substrate 10. Then, the etching prevention layer may be cut by irradiating a laser. According to this configuration, the cut surface of the etching prevention layer is relatively vertical, while the first opening 11 of the substrate 10 has a tapered shape. In addition, the second sub-layer ES12, the third sub-layer ES13, and the fourth sub-layer ES14 may protrude relatively toward the inside of the first opening 11.

[0129] Fig. 15 is a diagram showing a display panel according to a third embodiment of the present invention. Fig. 16 is a diagram showing a display panel before a light-transmitting area is formed. Figs. 17a to 17c are diagrams showing a process of forming an etching prevention layer in a dummy area. Figs. 18a and 18b are diagrams showing a process of etching a substrate to form a light-transmitting area in a display panel. Fig. 19 is a modified example of Fig. 18a.

[0130] 15, the first non-display area NDA1 may be disposed to surround the light-transmitting area TA, and may include a bezel area NDA11 in which a plurality of dam portions and blocking portions are alternately disposed, and a dummy area NDA12 disposed between the bezel area NDA11 and the light-transmitting area TA.

[0131] In the bezel area NDA11, a dam portion and a prevention portion can be formed by patterning a plurality of organic and inorganic films extending in the display area DA.

[0132] For example, the first prevention unit 210 may include a first structure 211 , a second structure 212 , and a third structure 213 , and the second prevention unit 220 may include a fifth structure 221 and a sixth structure 222 .

[0133] The first dam 301, the first prevention portion 210 and the second prevention portion 220 may be arranged in the shape of a closed loop surrounding the light-transmitting area TA. With this configuration, it is possible to prevent moisture from penetrating into the display area DA through the light-transmitting area TA.

[0134] In this embodiment, the first sub-layer ES11 may be formed by extending the first inorganic insulating layer and the second inorganic insulating layer of the encapsulation part, and the second sub-layer ES12 may be formed by extending the first touch planarization layer and the second touch planarization layer of the touch part. However, this is not necessarily limited thereto, and the first sub-layer ES11 may be formed of only one of the first inorganic insulating layer and the second inorganic insulating layer of the encapsulation part. Also, the second sub-layer ES12 may be formed of only one of the first touch planarization layer and the second touch planarization layer of the touch part.

[0135] The first sub-layer ES11 may be formed only in a part of the dummy area NDA12. That is, the first sub-layer ES11 may be spaced apart from the light-transmitting area TA by a predetermined distance. In contrast, the second sub-layer ES12 may extend to the light-transmitting area TA. That is, the distance d11 between the first sub-layer ES11 and the light-transmitting area TA may be longer than the distance d11 between the second sub-layer ES12 and the light-transmitting area TA.

[0136] The second sub-layer ES12 can include a first protrusion P11 protruding from an end of the first sub-layer ES11 toward the substrate 10, and a second protrusion P12 protruding from the first protrusion P11 toward the first opening 11 of the substrate 10.

[0137] In this case, the height of the second protrusion P12 may be formed higher than the upper surface of the substrate 10. A vertical distance d12 between the second protrusion P12 and the upper surface of the substrate 10 may be equal to the thickness of the first sub-layer ES11.

[0138] A coating layer 30 may be formed on a lower surface of the second protruding portion P12. The coating layer 30 may be formed to a uniform thickness on the first opening 11 of the substrate 10 and the lower surface of the second protruding portion P12. However, the present invention is not limited to this, and the coating layer 30 may fill the first opening 11 entirely.

[0139] 16, the first sub-layer ES11 may include a cut portion in the dummy area NDA12 where the insertion groove H1 is formed, while the second sub-layer ES12 may be continuously formed from the bezel area NDA11 to the transparent area TA. Therefore, the second sub-layer ES12 may have a first protrusion P11 corresponding to the insertion groove H1. The first protrusion P11 may be formed in a closed loop shape to surround the dummy dam structure OB1 in the transparent area TA.

[0140] 17a to 17c, a first sub-layer ES11 may be formed on the substrate 10 in a dummy region as shown in Fig. 17a, and then a portion of the first sub-layer ES11 may be removed to form an insertion groove H1 as shown in Fig. 17b. Then, a second sub-layer ES12 may be formed on the first sub-layer ES11 as shown in Fig. 17c, so that a portion of the second sub-layer ES12 may be inserted into the insertion groove H1. Thus, the second sub-layer ES12 may be inserted into the insertion groove H1 to form a first protrusion P11 that contacts the substrate 10.

[0141] Referring to FIG. 18a, a first sub-layer ES11 may be disposed to surround the dummy dam structure OB1, and a second sub-layer ES12 may be disposed to surround the first sub-layer ES11.

[0142] A first opening 11 may be formed in the rear surface of the substrate 10 to remove the dummy dam structure OB1. The first opening 11 may be formed to surround the dummy dam structure OB1. Exemplarily, a mask may be formed on the rear surface of the substrate 10 in a remaining area except for an area where the first opening 11 is to be formed, and then the rear surface of the substrate 10 may be contacted with an etchant.

[0143] The second sub-layer ES12 has a first opening 11 formed on the rear surface of the substrate 10 so that the first sub-layer ES11, which is an inorganic film, can be exposed to the etching solution.

[0144] 18b, the first sub-layer ES11 may be etched by the etchant after a predetermined time has passed. In contrast, the second sub-layer ES12, which is an organic film, may not be etched by the etchant even after a certain time has passed. Therefore, the dummy dam structure OB1 surrounded by the first sub-layer ES11 may be removed in the light transmitting region TA.

[0145] Thereafter, a coating layer 30 may be formed on the inner surface of the first opening 11 of the substrate 10 and the inner surface of the second sub-layer ES12. The coating layer 30 may fill the inside of the first opening 11 entirely.

[0146] Thereafter, the second sub-layer ES12 is cut using a laser L1 to form a light-transmitting area TA.

[0147] 19, the etch stop layer may be formed by stacking a plurality of layers made of an organic film, an inorganic film, and a metal film. Exemplarily, the first sub-layer ES11 may be made of an inorganic film, the second sub-layer ES12 may be made of an organic film, the third sub-layer ES13 may be made of an inorganic film, and the fourth sub-layer ES14 may be made of an organic film.

[0148] Moreover, the first sub-layer ES11 may be made of an inorganic film, the second sub-layer ES12 may be made of a metal film, and the third sub-layer ES13 and the fourth sub-layer ES14 may be made of an organic film.

[0149] FIG. 20 is a conceptual diagram of a display device according to another embodiment of the present invention.

[0150] 20, in the display device according to the embodiment, the front surface of the display panel may be configured as a display area DA. Therefore, a full-screen display may be possible. The display device may be the display panel itself, or may be a concept including the display panel and a driving unit.

[0151] The display area DA may include a first display area DA and a second display area CA. The first display area DA and the second display area CA both output images, but may have different resolutions. Exemplarily, the resolution of the second pixels arranged in the second display area CA may be lower than the resolution of the first pixels arranged in the first display area DA. As the resolution of the second pixels arranged in the second display area CA becomes lower, a relatively larger amount of light may be injected into the sensor 40 arranged in the second display area CA.

[0152] However, this is not necessarily limited to this, and as long as the second display area CA has sufficient light transmittance or an appropriate compensation algorithm can be implemented, the resolution of the first display area DA and the resolution of the second display area CA may be the same.

[0153] The second display area CA may be an area in which the sensor 40 is arranged. Since the second display area CA overlaps with various sensors, it may be smaller in area than the first display area DA which outputs most of the image.

[0154] The sensor 40 may include at least one of an image sensor, a proximity sensor, an illuminance sensor, a gesture sensor, a motion sensor, a fingerprint recognition sensor, and a biometric sensor. For example, the first sensor may be an illuminance sensor or an infrared sensor, and the second sensor may be, but is not limited to, a camera that captures images or videos.

[0155] The pixel array of the first display area DA may include a pixel area in which a plurality of pixel groups having a high PPI are arranged. The pixel array of the second display area CA may include a pixel area in which a plurality of pixel groups having a relatively low PPI are arranged, separated by a transparent area. In the second display area CA, external light may pass through the display panel through the transparent area having a high light transmittance and be received by a sensor below the display panel.

[0156] The substrate 10 may include a first opening 11 disposed in the second display area CA. The first opening 11 may have a tapered shape that narrows as it approaches the cover glass 20. However, this is not necessarily limited thereto, and the first opening 11 may have a wider width as it approaches the cover glass 20, or may have a constant width in the thickness direction. The tapered shape of the first opening 11 may be variously modified depending on the type of etchant and the etching method used.

[0157] A first etch stop layer ES1 may be disposed on the first opening 11 of the substrate 10. Also, a second etch stop layer ES2 may be disposed on an edge of the substrate 10. The first etch stop layer ES1 and the second etch stop layer ES2 may prevent an etchant from penetrating into the inside of the panel when the substrate 10 is etched.

[0158] The first etching stop layer ES1 and the second etching stop layer ES2 may include an organic material that is resistant to an etching solution. For example, the etching stop layer may include one selected from the group consisting of polyester-based polymers, silicon-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof.

[0159] The first etching stop layer ES1 and the second etching stop layer ES2 may be formed by extending from at least one of the layers constituting the circuit unit 13, the element unit 15, the sealing unit 17, and the touch unit 18. With this configuration, the etching stop layers can be formed without adding a separate process.

[0160] A coating layer 30 may be formed on the rear surface of the substrate 10. The coating layer 30 may be formed of an organic material, such as a polyester-based polymer or an acrylic-based polymer.

[0161] A second non-display area NDA2 may be disposed on an edge of the display panel, and may be a margin required when separating a plurality of panels from a mother glass substrate.

[0162] The substrate 10 may include a second inclined surface 12a formed on the edge. The second inclined surface 12a may have the same angle and depth as the first inclined surface 11a formed in the first opening 11. The first opening 11 and the second inclined surface 12a may have the same inclination angle and etching depth because they are formed simultaneously by an etching solution.

[0163] According to the embodiment, the first opening 11 can be formed in the substrate 10 of each display panel during the process of etching the mother glass substrate using an etchant to separate it into a plurality of display panels. Therefore, the openings can be formed without reducing the rigidity and without using additional equipment, thereby improving the light transmission efficiency. [Explanation of symbols]

[0164] 10: Substrate

[0165] 11: First opening

[0166] 12:Circuit layer

[0167] 15: Element layer

[0168] TA: Translucent area

[0169] ES1: First etch stop layer

[0170] ES2: Second etch stop layer

Claims

1. a glass substrate including a display area and a light-transmitting area; A circuit portion disposed on the display area; and an element portion disposed on the circuit portion, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; the display panel includes a first etching prevention layer disposed on the glass substrate and surrounding the first opening; the first etch stop layer includes a first sub-layer disposed on the glass substrate and a second sub-layer disposed on the first sub-layer; The first etch-stop layer includes a third sub-layer disposed between the first sub-layer and the second sub-layer.

2. a glass substrate including a display area and a light-transmitting area; A circuit portion disposed on the display area; and an element portion disposed on the circuit portion, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; the display panel includes a first etching prevention layer disposed on the glass substrate and surrounding the first opening; the first etching prevention layer includes a protruding portion protruding into the first opening, A display panel, wherein a coating layer is disposed on a rear surface of the glass substrate, an inner surface of the first opening, and a lower surface of the protrusion.

3. The display panel of claim 1 , wherein the first etching prevention layer comprises an organic material.

4. The display panel according to claim 2 , wherein an inclination angle of the inner surface of the first opening and an inclination angle of the side surface of the protrusion are different.

5. the first sublayer comprises an inorganic material; The display panel of claim 1 , wherein the second sub-layer comprises an organic material.

6. The display panel of claim 1 , wherein the third sub-layer comprises a metal.

7. The display panel according to claim 1 , wherein the second sub-layer further protrudes inwardly of the first opening.

8. the glass substrate includes a second inclined surface formed on an edge thereof; The display panel according to claim 1 , wherein an angle of the second inclined surface is the same as an angle of an inclination of an inner surface of the first opening.

9. The display panel of claim 2 , wherein the coating layer comprises an organic material.

10. a glass substrate including a display area and a light-transmitting area; A circuit portion disposed on the display area; and an element portion disposed on the circuit portion, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; the display panel includes a first etching prevention layer disposed on the glass substrate and surrounding the first opening; the first etch stop layer includes a first sub-layer disposed on the glass substrate and a second sub-layer disposed on the first sub-layer; The first sublayer includes an insertion groove formed by removing a portion of the first sublayer, The second sub-layer includes a first protrusion that is inserted into the insertion groove and contacts the glass substrate.

11. the second sublayer includes a second protruding portion protruding into the first opening, The display panel of claim 10 , wherein the second protrusion is disposed higher than an upper surface of the glass substrate.

12. a glass substrate including a display area and a light-transmitting area; A circuit portion disposed on the display area; and an element portion disposed on the circuit portion, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; the display panel includes a first etching prevention layer disposed on the glass substrate and surrounding the first opening; the first etch stop layer includes a first sub-layer disposed on the glass substrate and a second sub-layer disposed on the first sub-layer; The display area is Buffer layer, a semiconductor layer disposed on the buffer layer; a gate insulating film disposed on the semiconductor layer; a gate electrode disposed on the gate insulating film; A first insulating film disposed on the gate electrode; a source electrode and a drain electrode disposed on the first insulating film; a planarization layer disposed on the source and drain electrodes; a bank layer disposed on the planarization layer; A display panel, wherein the second sub-layer is formed by extending the planarization layer or the bank layer into the light-transmitting region.

13. The display panel according to claim 12 , wherein the first sub-layer is formed by extending the buffer layer into the light-transmitting region.

14. a second etch stop layer disposed on the second inclined surface; The display panel of claim 8 , wherein the first etching prevention layer and the second etching prevention layer have the same layer structure.

15. a glass substrate including a display area and a light-transmitting area; A circuit portion disposed on the display area; and an element portion disposed on the circuit portion, the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region and a second inclined surface formed on a side surface of the first opening, the display panel includes a first etching prevention layer disposed on the glass substrate and surrounding the first opening; the display area includes a plurality of organic insulating layers and a plurality of metal layers; A display panel, wherein the first etching prevention layer is disposed so that the plurality of organic insulating layers or the plurality of metal layers extend into the light-transmitting region.

16. The display panel of claim 15, further comprising a second etching prevention layer disposed on the second inclined surface.

17. The display panel of claim 16 , wherein the first etching prevention layer and the second etching prevention layer have the same layer structure.

18. The display panel of claim 16 , wherein the first etching prevention layer includes a protrusion that protrudes inwardly of the first opening.

19. a glass substrate including a display area and a light-transmitting area; a circuit portion disposed on the display area; An element portion disposed on the circuit portion, and an electronic device disposed below the light-transmitting area; the glass substrate includes a first opening disposed at a position corresponding to the light-transmitting region; The display device includes a first etching prevention layer disposed on the glass substrate and surrounding the first opening; the first etching prevention layer includes a protruding portion protruding into the first opening, A display device, wherein a coating layer is disposed on a rear surface of the glass substrate, an inner surface of the first opening, and a lower surface of the protrusion.

20. the glass substrate includes a second inclined surface formed on an edge thereof; The display device of claim 19 , wherein an angle of the second inclined surface is the same as an angle of the first opening.

Images