Light-emitting device and its manufacturing method, display device, photoelectric conversion device, electronic device, lighting device, and mobile object

Abstract

To provide a technique of increasing the light emission efficiency of a light emitting device.SOLUTION: A light emitting device includes: a plurality of first electrodes; an organic layer located on the first electrodes and including a light emission layer; a second electrode on the organic layer; and an insulation layer for separating the first electrodes from one another. The respective upper surfaces of the first electrodes include an inside region in contact with the organic layer and an outside region in contact with the insulation layer. The insulation layer has an opening which defines the inside region and a step located in a position separate from the opening and overlapping with the outside region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-emitting device and a manufacturing method thereof, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a mobile object. [Background technology]

[0002] In recent years, the pixel density of display devices using organic EL elements has been increasing. Accordingly, leakage current between pixels is more likely to occur through an organic layer provided in common to a plurality of pixels. When leakage current occurs, non-emitting pixels emit a small amount of light due to the influence of the emitting pixels, which causes color mixing and reduced luminous efficiency. Patent Document 1 proposes forming a groove in an insulating layer separating anode electrodes of organic EL elements to reduce the leakage current between pixels, thereby thinning the film thickness of a low-resistance organic layer inside the groove. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-216338 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the method of forming a groove in an insulating layer between pixels as in Patent Document 1, a current flows through the low-resistance organic layer to the vicinity of the groove. This current causes light to be emitted not only from the portion of the organic layer that is in contact with the anode electrode, but also from the surrounding area. In a light-emitting device having a structure that enhances the light-emitting intensity by the interference effect of light, if the light-emitting area is large, the light-emitting efficiency may decrease. One aspect of the present invention aims to provide a technology for improving the light-emitting efficiency of a light-emitting device. [Means for solving the problem]

[0005] In light of the above issues , multiplea first electrode including a first light-emitting layer, an organic layer including a light-emitting layer and located on the first electrodes, a second electrode located on the organic layer, and an insulating layer separating the first electrodes from each other, wherein an upper surface of each of the first electrodes includes an inner region in contact with the organic layer and an outer region covered by the insulating layer, and the insulating layer has an opening defining the inner region, A light emitting device having a first top surface, a second top surface farther from an opening than the first top surface, and a third top surface disposed between the first top surface and the second top surface, wherein an inclination angle of the third top surface with respect to the first electrode is larger than an inclination angle of the first top surface with respect to the first electrode, Away from the opening and Of the first upper surface In a plan view, at a position overlapping the outer region With groove A light emitting device is provided, characterized in that Effect of the Invention

[0006] By the above means, the light emitting efficiency of the light emitting device is improved. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of the configuration of a light emitting device according to a first embodiment. [Diagram 2] FIG. 2 is an enlarged view for explaining a configuration example of the light emitting device according to the first embodiment. [Diagram 3] FIG. 1 is a plan view illustrating an example of the configuration of a light emitting device according to a first embodiment. [Figure 4] 5A to 5C are diagrams illustrating the emission intensity of the light emitting device according to the first embodiment. [Diagram 5] 3A to 3C are cross-sectional views illustrating an example of a manufacturing method for the light emitting device according to the first embodiment. [Figure 6] 3A to 3C are schematic views illustrating an example of a vapor deposition method for a low resistance layer according to the first embodiment. [Figure 7] 6A to 6C are cross-sectional views illustrating an example of a manufacturing method for a light emitting device according to a modified example of the first embodiment. [Figure 8] 6A to 6C are cross-sectional views illustrating an example of a manufacturing method for a light emitting device according to a modified example of the first embodiment. [Figure 9] FIG. 11 is a cross-sectional view illustrating an example of the configuration of a light emitting device according to a second embodiment. [Figure 10] FIG. 11 is a cross-sectional view illustrating an example of the configuration of a light emitting device according to a third embodiment and a fourth embodiment. [Figure 11] FIG. 13 is a cross-sectional view illustrating an example of the configuration of a light emitting device according to a fifth embodiment. [Figure 12]FIG. 13 is a diagram showing an example of a display device using the light-emitting device according to the embodiment. [Figure 13] 1A to 1C are diagrams illustrating examples of a photoelectric conversion device and an electronic device using the light-emitting device according to the embodiment. [Figure 14] FIG. 13 is a diagram showing an example of a display device using the light-emitting device according to the embodiment. [Figure 15] 1A and 1B are diagrams illustrating an example of a lighting device and a moving object using the light-emitting device according to the embodiment. [Figure 16] FIG. 13 is a diagram showing an example of a wearable device using the light emitting device of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0009] First Embodiment An example of the configuration of a light emitting device 100 according to a first embodiment will be described with reference to Figs. 1 to 3. Fig. 1 shows a schematic cross-sectional view of the light emitting device 100 in a plane passing through the light emitting circuit 101. The light emitting device 100 has a plurality of light emitting circuits 101. When the light emitting device 100 is used in a display device, each of the plurality of light emitting circuits 101 may function as a pixel. The following description of one of the plurality of light emitting circuits 101 may be similarly applied to each of the plurality of light emitting circuits 101.

[0010] The light-emitting device 100 has a substrate 102 and various components formed on the substrate 102. The substrate 102 includes a transistor 103. Each of the plurality of light-emitting circuits 101 may include an individual transistor 103. The light-emitting device 100 has an insulating layer 104 on the substrate 102. The upper surface of the insulating layer 104 is planarized. The light-emitting device 100 has conductive patterns 105 and 106 inside the insulating layer 104. The conductive pattern 105 is connected to a circuit element (e.g., a transistor 103) formed on the substrate 102 by a contact plug. The conductive pattern 106 is connected to the conductive pattern 105 by a contact plug. A drive circuit 107 for driving a light-emitting element described later is configured by the circuit element (e.g., the transistor 103) formed on the substrate 102, the conductive patterns 105 and 106, and the contact plugs connecting them.

[0011] The light emitting device 100 has an insulating layer 108 on an insulating layer 104. The upper surface of the insulating layer 108 is planarized. The light emitting device 100 has a contact plug 109 inside the insulating layer 108. The contact plug 109 penetrates the insulating layer 108 and connects the conductive pattern 106 to a lower electrode 110, which will be described later.

[0012] The light-emitting device 100 has a plurality of lower electrodes 110 on an insulating layer 108. The plurality of lower electrodes 110 are separated from each other. Each of the plurality of light-emitting circuits 101 may include an individual lower electrode 110. The upper surfaces of the plurality of lower electrodes 110 are flat. The light-emitting device 100 has an organic layer 112 on the plurality of lower electrodes 110. The organic layer 112 is disposed across the plurality of light-emitting circuits 101. The light-emitting device 100 has an upper electrode 113 on the organic layer 112. The upper electrode 113 is disposed across the plurality of light-emitting circuits 101. The light-emitting device 100 has an insulating layer 111 between the insulating layer 108 and the organic layer 112.

[0013] The insulating layer 111 separates the lower electrodes 110 from one another. The insulating layer 111 is in contact with portions of the insulating layer 108 that are not covered by the lower electrodes 110, the side surfaces of the lower electrodes 110, and parts of the upper surfaces of the lower electrodes 110. The insulating layer 111 has openings 117 formed at positions overlapping the individual lower electrodes 110. The organic layer 112 is in contact with parts of the upper surfaces of the individual lower electrodes 110 through the openings 117. Furthermore, the insulating layer 111 has grooves 118 formed therein. The grooves 118 will be described in detail later.

[0014] A light-emitting element is formed by each of the lower electrodes 110, the organic layer 112, and the upper electrode 113. This light-emitting element may be called an organic electroluminescence (EL) element because it includes the organic layer 112. Each of the lower electrodes 110 may function as an anode of the light-emitting element. The upper electrode 113 may function as a cathode of the light-emitting element. One organic layer 112 and one upper electrode 113 are shared by multiple light-emitting elements.

[0015] The light emitting device 100 has a moisture-proof layer 114 on the upper electrode 113. The moisture-proof layer 114 is disposed across the plurality of light emitting circuits 101. The light emitting device 100 has a planarization layer 115 on the moisture-proof layer 114. The planarization layer 115 is disposed across the plurality of light emitting circuits 101. The upper surface of the planarization layer 115 is planarized. The light emitting device 100 has a plurality of color filters 116 on the planarization layer 115. Each of the plurality of light emitting circuits 101 may include an individual color filter 116. The light emitting elements of the plurality of light emitting circuits 101 may all be configured to emit white light. This white light passes through the color filter 116 and is separated into red, green, and blue colors and emitted.

[0016] The groove 118 will be described in detail with reference to FIG. 2. FIG. 2 is an enlarged view of a portion surrounded by a dashed line 119 in FIG. 1. The organic layer 112 of this embodiment has a laminated structure including a low resistance layer 201 and a light emitting layer 202. The low resistance layer 201 and the light emitting layer 202 are each formed of an organic material. The low resistance layer 201 and the light emitting layer 202 are each disposed across a plurality of light emitting circuits 101. The low resistance layer 201 is located between the light emitting layer 202 and a plurality of lower electrodes 110. The resistance value of the low resistance layer 201 is lower than the resistance value of the light emitting layer 202. The low resistance layer 201 may be a hole injection layer, a hole transport layer, or a charge generation layer, or may be a combination of these layers. The light emitting layer 202 emits light in response to a current flowing through the light emitting layer 202. In the example of FIG. 2, the organic layer 112 has one low resistance layer 201 and one light emitting layer 202. Alternatively, organic layers 112 may include a light-emitting layer for each of a number of emitting colors and be configured to emit white light.

[0017] The upper surface of each lower electrode 110 includes an inner region 203 and an outer region 204. The outer region 204 is located outside the inner region 203. The inner region 203 may be completely surrounded by the outer region 204. The inner region 203 is defined by an opening 117 in the insulating layer 111. In other words, a portion of the upper surface of each lower electrode 110 that is not covered by the insulating layer 111 (a portion overlapping the opening 117) becomes the inner region 203. The inner region 203 contacts the organic layer 112 (specifically, its low resistance layer 201). The outer region 204 contacts the insulating layer 111.

[0018] The groove 118 is located away from the opening 117 and overlaps the flat portion of the outer region 204. Steps 206 and 207 are formed by the groove 118. The step may be a structure formed by two flat portions having different heights from a reference plane (e.g., the flat portion of the outer region 204) and a portion connecting these two portions. The steps 206 and 207 are steps different from the step 205 facing the opening 117. The groove 118 does not reach the lower electrode 110. That is, the bottom surface of the groove 118 is formed by a part of the insulating layer 111. The inclination of the slope of the steps 206 and 207 (i.e., the sidewall of the groove 118) may be steeper than the slope of the slope of the step 205 (i.e., the sidewall facing the opening 117).

[0019] The organic layer 112 enters the groove 118. As described later, when the low resistance layer 201 is formed by deposition, the thickness of the low resistance layer 201 becomes thinner or even discontinues inside the groove 118. In other words, the distance between the bottom of the groove 118 and the light emitting layer 202 becomes smaller than the distance between the periphery of the groove 118 and the light emitting layer 202. In the example of FIG. 2, the low resistance layer 201 is discontinued inside the groove 118. When the thickness of the low resistance layer 201 becomes thinner in this way, the resistance value becomes higher in that portion. As a result, the current flowing from each lower electrode 110 to the low resistance layer 201 is less likely to flow beyond the groove 118. This makes it possible to reduce the amount of light emitted by the light emitting layer 202 outside the groove 118 (i.e., the side farther from the inner region 203). In addition, the leakage current between adjacent light emitting circuits 101 can also be reduced.

[0020] A plan view of the light emitting device 100 will be described with reference to Fig. 3. Specifically, Fig. 3 shows the arrangement of the contact plugs 109, the lower electrodes 110, and the grooves 118 in a plan view relative to the main surface of the substrate 102 (the surface on which the insulating layer 104 and the like are formed). Since the main surface of the substrate 102 and the inner region 203 are parallel to each other, the plan view relative to the main surface of the substrate 102 coincides with the plan view relative to the inner region 203.

[0021] As described above, the upper surface of the lower electrode 110 has the inner region 203 and the outer region 204. In the example of FIG. 3, the groove 118 surrounds the entire inner region 203 in a plan view of the inner region 203. This makes it possible to reduce current flowing beyond the groove 118 in all directions from the inner region 203. Alternatively, the groove 118 may be separated into multiple parts and partially surround the inner region 203 in a plan view of the inner region 203. Even in this case, it is possible to reduce current flowing beyond the groove 118 in the direction in which the groove 118 is located.

[0022] The area of ​​the inner region 203 may be smaller than the area of ​​the outer region 204. When the area of ​​the outer region 204 is relatively large in this way, the distance from the inner region 203 to the outside of the lower electrode 110 becomes long. Therefore, by forming the groove 118 at a position overlapping the outer region 204, the range of the current flowing through the low resistance layer 201 can be narrowed. In addition, the groove 118 may be located between the contact plug 109 and the inner region 203 in a plan view of the inner region 203. By arranging the groove 118 near the inner region 203 in this way, the range of the current flowing through the low resistance layer 201 can be narrowed. Instead of this, the groove 118 may be located at a position overlapping the contact plug 109 or outside the contact plug 109.

[0023] The groove 118 has an aspect ratio that allows the thickness of the low resistance layer 201 to be reduced inside the groove 118. The aspect ratio is the ratio (D1 / W1) of the depth D1 of the groove 118 to the width W1 of the groove 118. The width W1 of the groove 118 may be the distance between two side walls in a cross section (e.g., the cross section shown in FIG. 2) perpendicular to the direction in which the groove 118 extends. When the distance between the two side walls varies depending on the depth of the groove 118, the width W1 of the groove 118 may be the distance between the two side walls at an intermediate depth, or may be the average of the distances between the two side walls at a plurality of depths. The depth D1 of the groove 118 may be the distance between the bottom of the groove 118 and the surrounding portion of the groove 118 in a direction perpendicular to a reference plane (e.g., the main surface of the substrate 102). When the height of the surrounding portion of the groove 118 differs on both sides of the groove 118, the depth D1 of the groove 118 may be the average of the depths on each side.

[0024] The aspect ratio of the groove 118 may be, for example, 0.02 or more and 20 or less. More preferably, it may be 0.3 or more and 20 or less. In other words, the depth D1 of the groove 118 may be 0.02 or more and 20 or less times the width W1 of the groove 118, more preferably, 0.3 or more and 20 or less times. Furthermore, the aspect ratio of the groove 118 may be 1 or more. To achieve such an aspect ratio, the depth D1 of the groove 118 may be in the range of, for example, 10 nm to 200 nm, and the width W1 of the groove 118 may be in the range of, for example, 10 nm to 500 nm. Furthermore, the width W1 of the groove 118 may be larger than the film thickness of the low-resistance layer 201.

[0025] The grooves 118 may have an aspect ratio that can suppress a local increase in resistance of the upper electrode 113. For example, the aspect ratio of the grooves 118 may be 1 or more. This can suppress a decrease in display performance such as shading (i.e., uneven brightness due to a voltage drop in the plane of the upper electrode 113).

[0026] The width W1 and depth D1 of the groove 118 may vary depending on the position of the groove 118. For example, the width W1 and depth D1 of the groove 118 may be selected based on the shape and arrangement of the light-emitting elements in the light-emitting region, the resistance distribution of the upper electrode 113, and the like. In order to suppress deterioration of the light-emitting characteristics due to leakage current between light-emitting circuits of different emitted colors (deterioration of the color reproduction range due to color mixing), the aspect ratio of the groove 118 may be made relatively high between light-emitting circuits of different emitted colors.

[0027] With reference to FIG. 4, the difference in the light emission intensity of the light-emitting circuit 101 depending on the position of the groove 118 will be described. The horizontal axis of each graph in FIG. 4 indicates the emission wavelength, and the vertical axis indicates the intensity of the light emitted from the light-emitting circuit 101. FIG. 4 shows the results of an experiment in which the distance between the groove 118 and the inner region 203 was changed in three ways, and the other conditions were the same. Graph 301 shows the results when the distance between the groove 118 and the inner region 203 was the largest. Graph 303 shows the results when the distance between the groove 118 and the inner region 203 was the smallest. Graph 302 shows the results when the distance between the groove 118 and the inner region 203 was intermediate between these two. As can be seen from the results in FIG. 4, the light emission intensity increases as the distance between the groove 118 and the inner region 203 decreases. Therefore, as in this embodiment, the insulating layer 111 has the groove 118 at a position overlapping the upper electrode 113, thereby improving the light emission efficiency of the light-emitting circuit 101.

[0028] An example of a method for manufacturing the light emitting device 100 will be described with reference to Fig. 5. Fig. 5 shows a cross-sectional view of the light emitting device 100 in the middle of its manufacture, taken at the same position as Fig. 1. First, a driving circuit 107 is formed on the substrate 102 and the insulating layer 104. The driving circuit 107 may be formed by an existing MOS (metal oxide semiconductor) process, and therefore a detailed description thereof will be omitted. In each view of Fig. 5, the substrate 102 and the insulating layer 104 are omitted.

[0029] As shown in FIG. 5(a), an insulating layer 108 including contact plugs 109 is formed on an insulating layer 104, and a plurality of lower electrodes 110 are formed thereon. For example, the insulating layer 108 may be formed by depositing an insulating film such as an oxide film (SiOx) or an oxynitride film (SiON) by, for example, a plasma enhanced chemical vapor deposition (CVD) method, a high density plasma method, or a combination of these methods. The surface of the insulating layer 108 may be planarized by a chemical mechanical polishing (CMP) method after the deposition. A plurality of openings are formed at predetermined positions of the insulating layer 108 by a photolithography method and a dry etching method. For example, tungsten (W) is disposed in each opening, and excess portions are removed by a CMP method or an etch-back method, and the remaining portions become the contact plugs 109.

[0030] Thereafter, a laminated metal film made of titanium (Ti), titanium nitride (TiN), an aluminum alloy, and titanium (Ti) is formed by, for example, sputtering on the insulating layer 108. Next, the laminated metal film is patterned into a predetermined shape by photolithography and dry or wet etching to form a plurality of lower electrodes 110.

[0031] Thereafter, as shown in FIG. 5(b), an insulating layer such as an oxide film (SiOx), an oxynitride film (SiON), or a silicon nitride film (SiNx) is formed on the lower electrodes 110 by plasma CVD to form an insulating layer 111. The thickness of the insulating layer 111 may be, for example, 1 nm to 500 nm. The method of forming the insulating layer 111 is not limited to the above, and any method for forming an insulating layer may be used. For example, other manufacturing methods include high density plasma CVD, atomic layer deposition (ALD), sputtering, or spin coating or slit coating of a coating material. The insulating layer 111 may be formed by stacking multiple layers. The multiple layers may all be made of the same material, or layers of different materials may be mixed.

[0032] Next, as shown in FIG. 5(c), the insulating layer 111 is patterned into a predetermined shape using a photolithography method and a dry etching method or a wet etching method to form a groove 118. The groove 118 is formed at a position overlapping the outer region 204 of each lower electrode 110. Furthermore, as shown in FIG. 5(d), the insulating layer 111 is patterned into a predetermined shape using a photolithography method and a dry etching method or a wet etching method to form an opening 117. The opening 117 is formed at a position overlapping the inner region 203 of each lower electrode 110. Along with the formation of the opening 117, an opening for connecting the upper electrode 113 to a metal layer in the same layer as the lower electrode 110, which is formed in a later step, may also be formed. The groove 118 may be formed after the opening 117. Next, the surfaces of the lower electrode 110 and the insulating layer 111 are washed to remove foreign matter from the surfaces. After such a washing step, a dehydration process is performed to remove moisture from the substrate surface.

[0033] 5(e), an organic layer 112 including a light-emitting layer 202 is formed on the insulating layer 111 in which the groove 118 and the opening 117 are formed. As described above, the organic layer 112 may include a low-resistance layer 201. The low-resistance layer 201 may be a hole injection layer, a hole transport layer, or a charge generation layer, or a combination thereof. The low-resistance layer 201 and the light-emitting layer 202 may be formed by evaporating an organic material, for example, by a vacuum deposition method. An electron transport layer may be further formed on the light-emitting layer 202. For example, a rotary deposition method, a line deposition method, or a transfer deposition method may be used as the vacuum deposition method.

[0034] Thereafter, without releasing the reduced pressure atmosphere to the atmosphere, the upper electrode 113 is formed on the organic layer 112 by a vacuum deposition method. Then, for example, a plasma CVD method, a sputtering method, an ALD method, or the like, or a combination thereof, is used to form a moisture-proof layer 114 so as to cover the upper electrode 113. The deposition temperature of the moisture-proof layer 114 may be equal to or lower than the decomposition temperature of the organic material constituting the organic layer 112, for example, 120° C. or lower. Then, a planarization layer 115 for improving adhesion is formed on the moisture-proof layer 114. Then, for example, a red filter material is applied on the planarization layer 115, and a red filter is formed by patterning the material by photolithography. In the same manner, a green filter and a blue filter are sequentially formed to form a color filter 116. Then, a terminal extraction pad portion in the light-emitting device 100 is formed by patterning into a predetermined shape by photolithography and dry etching. In this manner, the light-emitting device 100 of FIG. 1 is manufactured.

[0035] With reference to FIG. 6, a method of vapor deposition of the low-resistance layer 201 will be described. An organic material for forming the low-resistance layer 201 is emitted from a vapor deposition source 600 toward the surface of the insulating layer 111. When forming the low-resistance layer 201, an angle θ between a direction 601 perpendicular to the surface of the insulating layer 111 and a path 602 of the organic material toward the groove 118 is set to be greater than 0 degrees. In vacuum vapor deposition, the path 602 of the organic material evaporated from the vapor deposition source 600 toward the groove 118 is almost linear. Therefore, shadowing occurs inside the groove 118, and the film thickness of the low-resistance layer 201 varies. Specifically, the film thickness of the low-resistance layer 201 becomes thin inside the groove 118, and in some cases the film thickness becomes zero (i.e., the low-resistance layer 201 is interrupted). In this way, the low-resistance layer 201 having the shape shown in FIG. 2 is formed.

[0036] With reference to Fig. 7, a modified method of forming the insulating layer 111 will be described. In this modified example, the steps of Fig. 7(a) to Fig. 7(c) are performed instead of the steps of Fig. 5(b) to Fig. 5(d). The rest of the process may be the same as the above-mentioned embodiment.

[0037] As shown in FIG. 7(a), the insulating layer 111 having a laminated structure including an insulating layer 701 and an insulating layer 702 is formed on the plurality of lower electrodes 110. Specifically, first, an insulating layer such as an oxide film (SiOx), an oxynitride film (SiON), or a silicon nitride film (SiNx) is formed on the plurality of lower electrodes 110 by a plasma CVD method to form the insulating layer 701. The thickness of the insulating layer 701 may be, for example, 1 nm to 50 nm. Then, an insulating layer such as an oxide film (SiOx), an oxynitride film (SiON), or a silicon nitride film (SiNx) is formed on the insulating layer 701 by a plasma CVD method to generate the insulating layer 702. The thickness of the insulating layer 702 may be, for example, 10 nm to 500 nm. The insulating layer 702 is made of a different material from the insulating layer 701. For example, the insulating layer 701 may be a silicon nitride film (SiNx), and the insulating layer 702 may be an oxide film (SiOx).

[0038] The method of forming the insulating layers 701 and 702 is not limited to the above, and any method for forming an insulating layer may be used. For example, other manufacturing methods include a high density plasma CVD method, an atomic layer deposition (ALD) method, a sputtering method, or a spin coating or slit coating method of a coating material.

[0039] The insulating layer 701 may be formed by stacking a plurality of layers. For example, the insulating layer 701 may be formed by depositing an oxide film (SiOx) and then depositing a silicon nitride film (SiNx). When the lower electrode 110 is made of ITO (indium tin oxide), the silicon nitride film (SiNx) may not be deposited uniformly by a CVD method using silane gas. Therefore, the insulating layer 701 may be formed on the lower electrode 110 of ITO by depositing an oxide film (SiOx) and then depositing a silicon nitride film (SiNx).

[0040] 7(b), the insulating layer 111 is patterned into a predetermined shape using photolithography and dry or wet etching to form a groove 118. The groove 118 is formed at a position overlapping the outer region 204 of each lower electrode 110. In this etching, the insulating layer 701 functions as an etching stop layer. Therefore, the groove 118 penetrates the insulating layer 702 and reaches the insulating layer 701. The insulating layer 701 becomes the bottom of the groove 118. Since the insulating layer 701 functions as an etching stop layer, the variation in depth at multiple positions of the groove 118 is reduced, and the effect of reducing the leakage current can be made uniform.

[0041] 7(c), the insulating layer 111 is patterned into a predetermined shape using photolithography and dry or wet etching to form an opening 117. The opening 117 is formed at a position overlapping the inner region 203 of each lower electrode 110. The groove 118 may be formed after the opening 117. In the opening 117, a portion of the insulating layer 701 and a portion of the insulating layer 702 may have different taper angles.

[0042] With reference to Fig. 8, another modified example of the method for forming the insulating layer 111 will be described. In this modified example, the steps of Fig. 8(a) to Fig. 8(c) are performed instead of the steps of Fig. 5(b) to Fig. 5(c). The rest of the process may be the same as the above-mentioned embodiment.

[0043] 8(a), an insulating layer 801 is formed on the plurality of lower electrodes 110. Specifically, the insulating layer 801 is formed on the plurality of lower electrodes 110 by forming an insulating layer such as an oxide film (SiOx), an oxynitride film (SiON), or a silicon nitride film (SiNx) by a plasma CVD method.

[0044] 8(b), the insulating layer 801 is patterned into a predetermined shape using photolithography and dry or wet etching to form grooves 802. The grooves 802 are formed at positions overlapping the outer regions 204 of the individual lower electrodes 110.

[0045] 8(c), an insulating layer 803 is formed on the insulating layer 801. Specifically, an insulating layer such as an oxide film (SiOx), an oxynitride film (SiON), or a silicon nitride film (SiNx) is formed on the insulating layer 801 by a plasma CVD method to form the insulating layer 803. A part of the insulating layer 803 enters the inside of the groove 802 to form the groove 118. The insulating layer 801 and the insulating layer 803 are combined to form the insulating layer 111. By forming the groove 802 in this way and then further forming the insulating layer 803, the groove 118 having a higher aspect ratio than the groove 802 can be formed.

[0046] The method of forming the insulating layers 801 and 803 is not limited to the above, and any method for forming an insulating layer may be used. For example, other manufacturing methods include a high density plasma CVD method, an atomic layer deposition (ALD) method, a sputtering method, or a spin coating or slit coating method of a coating material.

[0047] <Second embodiment> A configuration example of a light emitting device 900 according to the second embodiment will be described with reference to Fig. 9. In the following description, differences from the first embodiment will be described, and commonalities with the first embodiment will not be described. The modified examples described in the first embodiment can also be applied to the second embodiment. Fig. 9(a) shows a cross-sectional view of the light emitting device 900 at the same position as in Fig. 1.

[0048] The light emitting device 900 further includes a reflective layer 901 and an insulating layer 902 in addition to the components of the light emitting device 100. The reflective layer 901 is located under each individual lower electrode 110. The reflective layer 901 is, for example, a metal. The lower electrode 110 of the light emitting device 900 is transparent. Light generated in the organic layer 112 and transmitted through the lower electrode 110 is reflected by the reflective layer 901 and is emitted to the outside of the light emitting device 900 through the lower electrode 110 again. This makes it possible to strengthen the light emitted from the light emitting device 900. The distance between the reflective layer 901 and the lower electrode 110 is set to be an optical path length that strengthens the light.

[0049] An insulating layer 902 is disposed between the reflective layer 901 and the lower electrode 110. In a plan view of the inner region 203 of the lower electrode 110, a part of the lower electrode 110 is bonded to the reflective layer 901. In a plan view of the inner region 203, the groove 118 is located between the part where the lower electrode 110 is bonded to the reflective layer 901 and the inner region 203.

[0050] The outer region 204 of the lower electrode 110 has a step 903 that increases in height from the inside to the outside in accordance with the shape of the upper surface of the reflective layer 901. The groove 118 is located in a position that overlaps a flat portion of the outer region 204 that is outside the step 903.

[0051] 9(b), a modified example of the light emitting device 900 will be described. In this modified example, the groove 118 is located at a position overlapping a portion where the lower electrode 110 is bonded to the reflective layer 901. In the photolithography for forming the groove 118 at this position, a multi-layer resist process may be used to reduce the effect of steps and improve the focus depth.

[0052] 9(c), another modified example of the light emitting device 900 will be described. In this modified example, the groove 118 is located at a position overlapping a flat portion of the outer region 204 that is on the inner side of the step 903. This allows the groove 118 to be located closer to the inner region 203.

[0053] <Third embodiment> With reference to FIG. 10(a), a configuration example of a light emitting device 1000 according to the third embodiment will be described. In the following description, differences from the first embodiment will be described, and commonalities with the first embodiment will not be described. The modified examples described in the first embodiment can also be applied to the third embodiment. The differences between the first and third embodiments can also be applied to the second embodiment. FIG. 10(a) shows a cross-sectional view of the light emitting device 1000 at the same position as in FIG. 1.

[0054] The light emitting device 1000 differs from the light emitting device 100 in that the insulating layer 111 has a protrusion 1001 instead of the groove 118. The protrusion 1001 is located away from the opening 117 and overlaps the flat portion of the outer region 204. The protrusion 1001 forms two steps (i.e., a step closer to the inner region 203 and a step farther from the inner region 203).

[0055] When the low-resistance layer 201 is formed by deposition on the insulating layer 111 of such a convex portion 1001, the thickness of the low-resistance layer 201 in the portion covering the sidewall of the convex portion 1001 is thinner than the thickness of the low-resistance layer 201 in the portion covering the periphery of the convex portion 1001 and the upper portion of the convex portion 1001. As a result, similar to the first embodiment, the leakage current flowing beyond the convex portion 1001 can be reduced. Similar to the groove 118 described in FIG. 3, the convex portion 1001 may surround the entire inner region 203 in a plan view of the inner region 203. Similar to the groove 118, the convex portion 1001 may be formed by patterning the insulating layer 111.

[0056] <Fourth embodiment> With reference to FIG. 10(b), a configuration example of a light emitting device 1050 according to the fourth embodiment will be described. In the following description, differences from the first embodiment will be described, and commonalities with the first embodiment will not be described. The modified examples described in the first embodiment can also be applied to the fourth embodiment. The differences between the first and fourth embodiments can also be applied to the second embodiment. FIG. 10(b) shows a cross-sectional view of the light emitting device 1050 at the same position as in FIG. 1.

[0057] Light-emitting device 1050 differs from light-emitting device 100 in that insulating layer 111 has a step 1051 instead of groove 118. Step 1051 is located away from opening 117 and overlaps a flat portion of outer region 204.

[0058] When the low-resistance layer 201 is formed by deposition on the insulating layer 111 having such a step 1051, the thickness of the low-resistance layer 201 in the portion covering the sidewall of the step 1051 is thinner than the thickness of the low-resistance layer 201 in the portion covering the periphery of the step 1051. As a result, similar to the first embodiment, the leakage current flowing beyond the step 1051 can be reduced. Similar to the groove 118 described in FIG. 3, the step 1051 may surround the entire inner region 203 in a plan view of the inner region 203. Similar to the groove 118, the step 1051 may be formed by patterning the insulating layer 111.

[0059] <Fifth embodiment> With reference to FIG. 11, a configuration example of a light emitting device 1100 according to the fifth embodiment will be described. In the following description, differences from the first embodiment will be described, and commonalities with the first embodiment will not be described. The modified examples described in the first embodiment can also be applied to the fifth embodiment. The differences between the first and fifth embodiments can also be applied to any of the second to fourth embodiments. FIG. 11(a) shows a cross-sectional view of the light emitting device 1100 at the same position as FIG. 1.

[0060] The light emitting device 1100 differs from the light emitting device 100 in that it further has a plurality of microlenses 1101 on the upper electrode 113, but may be similar in other respects. The microlenses 1101 are translucent. An individual microlens 1101 is formed for each of the plurality of light emitting circuits 101. The microlenses 1101 protrude upward from the color filter 116. The microlenses 1101 are convex. The microlenses may be spherical lenses or aspherical lenses. The material of the microlenses 1101 may be a material having translucency and insulating properties. For example, the material of the microlenses 1101 may be a silicon-based inorganic material such as silicon oxide, or a resin material such as an acrylic resin.

[0061] 11(b), a plan view of the light emitting device 1100 will be described. Specifically, Fig. 11(b) shows the arrangement of the contact plugs 109, the lower electrodes 110, the grooves 118, and the microlenses 1101 in a plan view with respect to the main surface of the substrate 102.

[0062] The shape of the microlens 1101 in plan view is not particularly limited, but is circular in the example of FIG. 11(b). One microlens 1101 is disposed corresponding to one lower electrode 110. Furthermore, the microlens 1101 overlaps with the entire inner region 203 in plan view. Alternatively, the microlens 1101 may overlap with only a portion of the inner region 203. In plan view with respect to the main surface of the substrate 102, the area of ​​the microlens 1101 is larger than the area of ​​the inner region 203. Alternatively, the area of ​​the microlens 1101 may be the same as or smaller than the area of ​​the inner region 203.

[0063] 11(b), the groove 118 of the insulating layer 111 is positioned so as to overlap the microlens 1101. Alternatively, the groove 118 of the insulating layer 111 may be positioned so as to partially overlap the microlens 1101, or may not overlap the microlens 1101. The sizes of the multiple microlenses 1101 may be different from each other. By designing the microlens 1101 so that light emitted from the inner region 203 inside the groove 118 can be incident on the microlens 1101, it is possible to improve the viewing angle characteristics by the microlens 1101 while suppressing color mixing.

[0064] In the above-described embodiment, the organic layer 112 includes the low resistance layer 201, and the thickness of the low resistance layer 201 is reduced by forming the low resistance layer 201 on the insulating layer 111 having the groove 118, the protrusion 1001, or the step 1051. Alternatively, the organic layer 112 may not include the low resistance layer 201. In this case, the light-emitting layer 202 may contact the inner region 203 of the lower electrode 110 and the insulating layer 111. Even in such a configuration, the light-emitting layer 202 can be partially thinned by forming the light-emitting layer 202 on the insulating layer 111 having the groove 118, the protrusion 1001, or the step 1051, and as a result, the leakage current is reduced.

[0065] [Structure of organic light-emitting element] The organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When a color filter is provided, a planarizing layer may be provided between the protective layer. The planarizing layer may be made of acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.

[0066] [substrate] Examples of the substrate include quartz, glass, silicon wafer, resin, and metal. In addition, the substrate may be provided with switching elements such as transistors and wiring, and an insulating layer may be provided thereon. Any material may be used for the insulating layer, as long as it is possible to form a contact hole so that wiring can be formed between the first electrode and the insulating layer, and insulation from wiring that is not connected can be ensured. For example, resin such as polyimide, silicon oxide, silicon nitride, etc. may be used.

[0067] [electrode] A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0068] The material constituting the anode should have as large a work function as possible. For example, metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, etc., mixtures containing these metals, alloys combining these metals, metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0069] These electrode materials may be used alone or in combination of two or more kinds. The anode may be composed of a single layer or a plurality of layers.

[0070] When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. The above materials can also function as a reflective film without serving as an electrode. When used as a transparent electrode, a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.

[0071] On the other hand, the material for the cathode should have a small work function. Examples of the material include alkali metals such as lithium, alkaline earth metals such as calcium, aluminum, titanium, manganese, silver, lead, chromium, and other metals or mixtures containing these metals. Alternatively, alloys combining these metals can be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, and the like can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used alone or in combination of two or more types. The cathode may have a single layer structure or a multi-layer structure. Among these, it is preferable to use silver, and it is even more preferable to use a silver alloy to reduce the aggregation of silver. As long as the aggregation of silver can be reduced, the ratio of the alloy is not important. For example, the ratio of silver to other metals may be 1:1, 3:1, and the like.

[0072] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but it is more preferable to use a direct current or alternating current sputtering method, etc., since the film coverage is good and the resistance can be easily reduced.

[0073] [Organic compound layer] The organic compound layer may be formed as a single layer or as multiple layers. When the organic compound layer has multiple layers, it may be called a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc., depending on its function. The organic compound layer is mainly composed of an organic compound, but may also contain inorganic atoms and inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

[0074] [Protective layer] A protective layer may be provided on the cathode. For example, by bonding glass provided with a moisture absorbent on the cathode, the intrusion of water and the like into the organic compound layer can be reduced, and the occurrence of display defects can be reduced. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and the like into the organic compound layer. For example, after forming the cathode, the cathode may be transported to another chamber without breaking the vacuum, and a silicon nitride film having a thickness of 2 μm may be formed by the CVD method to form a protective layer. A protective layer may be provided using the atomic deposition method (ALD method) after the film formation by the CVD method. The material of the film by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed by the CVD method on the film formed by the ALD method. The film by the ALD method may have a smaller thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

[0075] [Color Filter] A color filter may be provided on the protective layer. For example, a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using a photolithography technique. The color filter may be made of a polymer.

[0076] [Planarization layer] A planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing unevenness of the layer below. It may also be called a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be either a low molecular weight or a high molecular weight, but is preferably a high molecular weight.

[0077] The planarization layer may be provided above and below the color filter, and may be made of the same or different materials.Specific examples of the materials include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0078] [Microlens] The organic light-emitting device may have an optical member such as a microlens on its light-emitting side. The microlens may be made of acrylic resin, epoxy resin, or the like. The microlens may be intended to increase the amount of light extracted from the organic light-emitting device and control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the tangent and the hemisphere are the vertices of the microlens. The vertex of the microlens can be determined in the same manner in any cross-sectional view. In other words, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the tangent and the semicircle are the vertices of the microlens.

[0079] It is also possible to define the midpoint of the microlens. In the cross section of the microlens, a line segment is imaginary from a point where an arc shape ends to a point where another arc shape ends, and the midpoint of the line segment can be called the midpoint of the microlens. The cross section for determining the vertex and midpoint may be a cross section perpendicular to the insulating layer.

[0080] [Opposite substrate] A counter substrate may be provided on the planarization layer. The counter substrate is called a counter substrate because it is provided at a position corresponding to the aforementioned substrate. The material of the counter substrate may be the same as that of the aforementioned substrate. When the aforementioned substrate is the first substrate, the counter substrate may be the second substrate.

[0081] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device according to one embodiment of the present invention are formed by the method described below.

[0082] The organic compound layer constituting the organic light-emitting device according to one embodiment of the present invention can be formed by dry processes such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Alternatively, instead of the dry process, a wet process can be used in which a layer is formed by dissolving the compound in an appropriate solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0083] Here, when the layer is formed by a vacuum deposition method or a solution coating method, crystallization is unlikely to occur and the layer has excellent stability over time. When the layer is formed by a coating method, the layer can be formed by combining with a suitable binder resin.

[0084] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.

[0085] These binder resins may be used alone as homopolymers or copolymers, or in combination of two or more kinds. If necessary, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination.

[0086] [Pixel circuit] The light emitting device may have a pixel circuit connected to the light emitting element. The pixel circuit may be an active matrix type that controls the light emission of the first light emitting element and the second light emitting element independently. The active matrix type circuit may be a voltage programming circuit or a current programming circuit. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light emitting element, a transistor that controls the light emission luminance of the light emitting element, a transistor that controls the light emission timing, a capacitance that holds the gate voltage of the transistor that controls the light emission luminance, and a transistor for connecting to GND without going through the light emitting element.

[0087] The light-emitting device has a display region and a peripheral region disposed around the display region. The display region has a pixel circuit, and the peripheral region has a display control circuit. The mobility of a transistor constituting the pixel circuit may be smaller than the mobility of a transistor constituting the display control circuit.

[0088] The slope of the current-voltage characteristic of the transistor that constitutes the pixel circuit may be smaller than the slope of the current-voltage characteristic of the transistor that constitutes the display control circuit. The slope of the current-voltage characteristic can be measured by the so-called Vg-Ig characteristic.

[0089] The transistor that constitutes the pixel circuit is a transistor that is connected to a light-emitting element, such as the first light-emitting element.

[0090] [Pixels] An organic light emitting device includes a plurality of pixels, each of which includes sub-pixels that emit different colors, for example, RGB colors.

[0091] The pixel emits light in an area called the pixel aperture. This area is the same as the first area. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0092] The distance between the subpixels may be 10 μm or less, and specifically, may be 8 μm, 7.4 μm, or 6.4 μm.

[0093] The pixels may have a known arrangement in plan view. For example, they may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixels in plan view may be any known shape. For example, they may be a rectangle, a quadrangle such as a diamond, or a hexagon. Of course, if the shape is not an exact figure but is close to a rectangle, it is included in the rectangle. The shape of the subpixels and the pixel arrangement may be used in combination.

[0094] [Use of the organic light-emitting device according to one embodiment of the present invention] The organic light-emitting device according to an embodiment of the present invention can be used as a component of a display device or a lighting device, and can also be used as an exposure light source for an electrophotographic image forming device, a backlight for a liquid crystal display device, a light-emitting device having a white light source and a color filter, etc.

[0095] The display device may be an image information processing device having an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., an information processing unit that processes the input information, and displays the input image on a display unit.

[0096] The display unit of the imaging device or inkjet printer may have a touch panel function. The driving method of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used in the display unit of a multifunction printer.

[0097] Next, a display device according to the present embodiment will be described with reference to the drawings. In the following embodiments, the display device may be configured with the light emitting device according to any of the above-described embodiments (for example, the light emitting device 100).

[0098] 12 is a schematic diagram showing an example of a display device according to this embodiment. The display device 1200 may have a touch panel 1203, a display panel 1205, a frame 1206, a circuit board 1207, and a battery 1208 between an upper cover 1201 and a lower cover 1209. The touch panel 1203 and the display panel 1205 are connected to flexible printed circuits FPC1202 and 1204. A transistor is printed on the circuit board 1207. The battery 1208 may not be provided if the display device is not a portable device, and may be provided in a different position even if the display device is a portable device.

[0099] The display device according to this embodiment may have color filters having red, green, and blue colors, the red, green, and blue colors being arranged in a delta arrangement.

[0100] The display device according to the present embodiment may be used as a display unit of a mobile terminal. In this case, the display device may have both a display function and an operation function. Examples of the mobile terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0101] The display device according to the present embodiment may be used as a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. The display unit may be a display unit exposed to the outside of the imaging device, or may be a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0102] 13(a) is a schematic diagram showing an example of an imaging device according to this embodiment. The imaging device 1300 may have a viewfinder 1301, a rear display 1302, an operation unit 1303, and a housing 1304. The viewfinder 1301 may have a display device according to this embodiment. In this case, the display device may display not only an image to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an obstruction, and the like.

[0103] Since the timing suitable for imaging is short, it is better to display information as soon as possible. Therefore, it is preferable to use a display device using the organic light-emitting element of the present invention. This is because the organic light-emitting element has a fast response speed. A display device using an organic light-emitting element can be used more preferably than a liquid crystal display device, which requires a high display speed.

[0104] The imaging device 1300 has an optical section (not shown). The optical section has a plurality of lenses, which form an image on an imaging element housed in a housing 1304. The focus of the plurality of lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically. The imaging device may be called a photoelectric conversion device. The photoelectric conversion device can include an imaging method that does not capture images sequentially, but detects the difference from the previous image, cuts out an image from an image that is always recorded, and the like.

[0105] FIG. 13(b) is a schematic diagram showing an example of an electronic device according to this embodiment. The electronic device 1350 has a display unit 1351, an operation unit 1352, and a housing 1353. The housing 1353 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1352 may be a button or a touch panel type reaction unit. The operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking or the like. An electronic device having a communication unit can also be called a communication device. The electronic device may further have a camera function by being provided with a lens and an imaging element. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook computer.

[0106] Fig. 14 is a schematic diagram showing an example of a display device according to this embodiment. Fig. 14(a) shows a display device such as a television monitor or a PC monitor. The display device 1400 has a frame 1401 and a display unit 1402. The light-emitting device according to this embodiment may be used for the display unit 1402.

[0107] It has a frame 1401 and a base 1403 that supports a display unit 1402. The base 1403 is not limited to the form shown in Fig. 14(a). The lower side of the frame 1401 may also serve as the base.

[0108] The frame 1401 and the display unit 1402 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0109] FIG. 14(b) is a schematic diagram showing another example of the display device according to the present embodiment. The display device 1450 of FIG. 14(b) is configured to be bendable, and is a so-called foldable display device. The display device 1450 has a first display unit 1451, a second display unit 1452, a housing 1453, and a bending point 1454. The first display unit 1451 and the second display unit 1452 may have the light-emitting device according to the present embodiment. The first display unit 1451 and the second display unit 1452 may be a single display unit without a joint. The first display unit 1451 and the second display unit 1452 can be separated at the bending point. The first display unit 1451 and the second display unit 1452 may display different images, or the first and second display units may display one image.

[0110] FIG. 15(a) is a schematic diagram showing an example of a lighting device according to this embodiment. The lighting device 1500 may have a housing 1501, a light source 1502, a circuit board 1503, an optical film 1504, and a light diffusion section 1505. The light source may have an organic light-emitting element according to this embodiment. The optical film may be a filter that improves the color rendering of the light source. The light diffusion section can effectively diffuse the light of the light source, such as for lighting up, and deliver the light over a wide range. The optical film and the light diffusion section may be provided on the light emission side of the lighting. If necessary, a cover may be provided on the outermost part.

[0111] The lighting device is, for example, a device that illuminates a room. The lighting device may emit white light, neutral white light, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity. The lighting device may have the organic light-emitting element of the present invention and a power supply circuit connected thereto. The power supply circuit is a circuit that converts AC voltage into DC voltage. Moreover, white has a color temperature of 4200K, and neutral white has a color temperature of 5000K. The lighting device may have a color filter.

[0112] The lighting device according to the present embodiment may also include a heat dissipation section that dissipates heat from within the device to the outside, and examples of the heat dissipation section include metals with high specific heat, liquid silicon, and the like.

[0113] Fig. 15(b) is a schematic diagram of an automobile, which is an example of a moving body according to this embodiment. The automobile has tail lamps, which are an example of a lamp. The automobile 1550 has tail lamps 1551, and may be configured to turn on the tail lamps when braking or the like is performed.

[0114] The tail lamp 1551 may have the organic light-emitting element according to this embodiment. The tail lamp may have a protective member for protecting the organic EL element. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but is preferably made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.

[0115] Automobile 1550 may have a body 1553 and a window 1552 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the automobile. The transparent display may have an organic light-emitting element according to this embodiment. In this case, constituent materials of electrodes and the like of the organic light-emitting element are made of transparent members.

[0116] The moving body according to the present embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a body and a lamp provided on the body. The lamp may emit light to indicate the position of the body. The lamp has the organic light-emitting element according to the present embodiment.

[0117] An application example of the display device of each of the above-mentioned embodiments will be described with reference to Fig. 16. The display device can be applied to a system that can be worn as a wearable device such as smart glasses, HMD, and smart contacts. An image capturing and display device used in such an application example has an image capturing device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.

[0118] 16(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of a lens 1601 of the glasses 1600. In addition, a display device according to each of the above-mentioned embodiments is provided on the back side of the lens 1601.

[0119] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment. The control device 1603 also controls the operations of the image capture device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the image capture device 1602.

[0120] FIG. 16(b) illustrates glasses 1650 (smart glasses) according to one application example. The glasses 1650 have a control device 1652, and the control device 1652 is equipped with an imaging device equivalent to the imaging device 1602 and a display device. The lens 1651 is formed with an optical system for projecting light emitted from the imaging device in the control device 1652 and the display device, and an image is projected onto the lens 1651. The control device 1652 functions as a power source for supplying power to the imaging device and the display device, and controls the operation of the imaging device and the display device. The control device may have a line-of-sight detection unit that detects the line of sight of the wearer. Infrared light may be used for detecting the line of sight. The infrared light emitting unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means for reducing light from the infrared light emitting unit to the display unit in a planar view, deterioration of image quality is reduced.

[0121] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0122] More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0123] A display device according to an embodiment of the present invention may have an imaging device having a light receiving element, and may control a display image on the display device based on information about a user's line of sight from the imaging device.

[0124] Specifically, the display device determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0125] The display area includes a first display area and a second display area different from the first display area, and an area having a high priority is determined from the first display area and the second display area based on line-of-sight information. The first display area and the second display area may be determined by a control device of the display device, or may be determined by an external control device and received. The resolution of the area having a high priority may be controlled to be higher than the resolution of areas other than the area having a high priority. In other words, the resolution of an area having a relatively low priority may be lowered.

[0126] AI may be used to determine the first field of view area and areas with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object in the line of sight from an image of the eyeball, using an image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the display device, the imaging device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0127] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses that further include an imaging device for capturing images of the outside world. The smart glasses can display captured outside information in real time.

[0128] <Summary of the embodiment> [Item 1] A light emitting device, comprising: A plurality of first electrodes; an organic layer located on the plurality of first electrodes and including an emitting layer; a second electrode overlying the organic layer; and an insulating layer separating the first electrodes from each other; an upper surface of each of the plurality of first electrodes includes an inner region in contact with the organic layer and an outer region in contact with the insulating layer; The insulating layer is an opening defining the interior region; a step located away from the opening and overlapping the outer region. [Item 2] the insulating layer has a groove spaced from the opening and overlapping the outer region; 2. The light emitting device according to item 1, wherein the step in the insulating layer is formed by the groove in the insulating layer. [Item 3] 3. The light emitting device according to item 2, wherein the groove completely surrounds the inner region in a plan view of the inner region. [Item 4] the insulating layer has a laminated structure including a first insulating layer and a second insulating layer that is on the first insulating layer and is made of a different material from the first insulating layer; 4. The light emitting device according to item 2 or 3, wherein the groove penetrates the second insulating layer and reaches the first insulating layer. [Item 5] 5. The light emitting device according to any one of items 2 to 4, wherein the depth of the groove is 0.3 to 20 times the width of the groove. [Item 6] the organic layer further includes a hole injection layer, a hole transport layer, or a charge generation layer between the light emitting layer and the first electrodes; 6. The light-emitting device according to any one of claims 2 to 5, wherein the distance between the bottom of the groove in the insulating layer and the light-emitting layer is smaller than the distance between the periphery of the groove in the insulating layer and the light-emitting layer. [Item 7] the insulating layer has a protrusion located away from the opening and overlapping the outer region; 2. The light emitting device according to item 1, wherein the step of the insulating layer is formed by the protrusion of the insulating layer. [Item 8] The first electrode is transparent, The light emitting device further comprises a reflective layer below each of the first electrodes; 8. The light-emitting device according to any one of claims 1 to 7, characterized in that the step of the insulating layer is located between a portion where the first electrode is bonded to the reflective layer and the inner region in a planar view of the inner region. [Item 9] the light emitting device further includes a contact plug connected to the first electrode; 9. The light emitting device according to any one of items 1 to 8, wherein the step of the insulating layer is located between the contact plug and the inner region in a plan view of the inner region. [Item 10] The light emitting device further includes a microlens on the second electrode. 10. The light emitting device according to any one of items 1 to 9, wherein the step of the insulating layer is located so as to overlap the microlens. [Item 11] 11. The light emitting device according to any one of items 1 to 10, wherein an area of ​​the inner region is smaller than an area of ​​the outer region. [Item 12] 12. The light-emitting device according to any one of claims 1 to 11, wherein the organic layer further includes a hole injection layer, a hole transport layer, or a charge generation layer between the light-emitting layer and the plurality of first electrodes. [Item 13] 13. A display device comprising: a light-emitting device according to any one of items 1 to 12; and an active element connected to the light-emitting device. [Item 14] The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 13. A photoelectric conversion device, wherein the display unit is a display unit that displays an image captured by the imaging element, and the photoelectric conversion device includes the light-emitting device according to any one of items 1 to 12. [Item 15] A display device having a housing and a communication unit provided in the housing for communicating with an external device, 13. An electronic device, wherein the display unit comprises the light-emitting device according to any one of items 1 to 12. [Item 16] A lighting device having a light source and at least one of a light diffusion unit and an optical film, 13. An illumination device, wherein the light source comprises the light emitting device according to any one of items 1 to 12. [Item 17] A moving body having a body and a lighting device provided on the body, The lighting device is a moving body having the light emitting device according to any one of items 1 to 12. [Item 18] A method for manufacturing a light emitting device, comprising the steps of: forming an insulating layer on the plurality of first electrodes; forming steps in the insulating layer at positions overlapping outer regions of each of the plurality of first electrodes; forming openings in the insulating layer at positions overlapping inner regions of each of the first electrodes; forming an organic layer including a light-emitting layer on the insulating layer in which the step and the opening are formed; and forming a second electrode on the organic layer.

[0129] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0130] 100 Light emitting device, 110 Lower electrode, 111 Insulating layer, 112 Organic layer, 113 Upper electrode, 118 Groove

Claims

1. A plurality of first electrodes; an organic layer located on the plurality of first electrodes and including an emitting layer; a second electrode overlying the organic layer; an insulating layer separating the first electrodes from one another; an upper surface of each of the first electrodes includes an inner region in contact with the organic layer and an outer region covered with the insulating layer; The insulating layer is an opening defining the interior region; a first upper surface, a second upper surface that is farther from the opening than the first upper surface, and a third upper surface that is disposed between the first upper surface and the second upper surface; a tilt angle of the third upper surface with respect to the first electrode being larger than a tilt angle of the first upper surface with respect to the first electrode, a groove disposed on the first upper surface at a position away from the opening and overlapping with the outer region in a plan view;

2. The light emitting device according to claim 1 , wherein the groove completely surrounds the inner region in a plan view of the inner region.

3. 2. The light emitting device according to claim 1, wherein the depth of the groove is 0.3 to 20 times the width of the groove.

4. the organic layer further includes a hole injection layer, a hole transport layer, or a charge generation layer between the light emitting layer and the first electrodes; 2 . The light emitting device according to claim 1 , wherein a distance between a bottom of the groove in the insulating layer and the light emitting layer is smaller than a distance between a periphery of the groove in the insulating layer and the light emitting layer.

5. The light emitting device according to claim 1 , wherein the insulating layer has a protrusion located away from the opening and overlapping the outer region.

6. The first electrode has a light-transmitting property, The light emitting device further comprises a reflective layer under each of the first electrodes; The light emitting device according to claim 1 , wherein the groove in the insulating layer is located between the inner region and a portion where the first electrode is bonded to the reflective layer in a plan view of the inner region.

7. the light emitting device further includes a contact plug connected to the first electrode; The light emitting device according to claim 1 , wherein the groove in the insulating layer is located between the contact plug and the inner region in a plan view of the inner region.

8. The light emitting device further includes a microlens on the second electrode. The light emitting device according to claim 1 , wherein the groove in the insulating layer is located so as to overlap the microlens.

9. The light emitting device according to claim 1 , wherein the area of ​​the inner region is smaller than the area of ​​the outer region.

10. The light-emitting device according to claim 1 , wherein the organic layer further comprises a hole injection layer, a hole transport layer, or a charge generation layer between the light-emitting layer and the first electrodes.

11. The insulating layer has a laminated structure including a first insulating layer and a second insulating layer on the first insulating layer, the second insulating layer being made of a material different from that of the first insulating layer; The light emitting device according to claim 1 , wherein the groove penetrates the second insulating layer and reaches the first insulating layer.

12. A light emitting device having a first light emitting element and a second light emitting element, The first light-emitting element has a first electrode, a first organic layer including a light-emitting layer, and a second electrode in this order; the second light-emitting element has a second first electrode, a second organic layer including a light-emitting layer, and the second electrode in this order; the light emitting device has an insulating layer that provides insulation between the first electrode and the second electrode, an upper surface of each of the first first electrode and the second first electrode has an inner region in contact with the first organic layer or the second organic layer, and an outer region in contact with the insulating layer; The insulating layer is an opening defining the inner region of the first electrode; a first upper surface, a second upper surface that is farther from the opening than the first upper surface, and a third upper surface that is disposed between the first upper surface and the second upper surface; a first groove on the first upper surface and overlapping the outer region of the first electrode in a plan view; a second groove overlapping the outer region of the second first electrode in a plan view; an inclination angle of the third upper surface with respect to the first electrode is larger than an inclination angle of the first upper surface with respect to the first electrode; A light emitting device, wherein an aspect ratio of the first groove is different from an aspect ratio of the second groove.

13. A display device comprising: a light-emitting device according to claim 1 ; and an active element connected to the light-emitting device.

14. The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, A photoelectric conversion device, comprising: the display unit for displaying an image captured by the imaging element; and the light-emitting device according to claim 1 .

15. A display device having a housing and a communication unit provided in the housing for communicating with an external device, 13. An electronic device, comprising: a display unit comprising the light-emitting device according to claim 1.

16. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 13. An illumination device, characterized in that the light source comprises a light emitting device according to claim 1.

17. A moving body having a body and a lighting device provided on the body, A moving body, comprising: a lighting device comprising the light-emitting device according to claim 1 .

18. A method for manufacturing a light emitting device, comprising the steps of: forming an insulating layer having a laminated structure including a first insulating layer and a second insulating layer on the first insulating layer, the second insulating layer being made of a material different from the first insulating layer, and covering a plurality of first electrodes; forming grooves in the insulating layer at positions overlapping outer regions of the first electrodes in a plan view so as to penetrate the second insulating layer and reach the first insulating layer; forming openings in the insulating layer at positions overlapping inner regions of each of the first electrodes; forming an organic layer including a light-emitting layer on the insulating layer in which the groove and the opening are formed; forming a second electrode on the organic layer; the insulating layer has a first upper surface, a second upper surface that is farther from the opening than the first upper surface, and a third upper surface that is disposed between the first upper surface and the second upper surface; an inclination angle of the third upper surface with respect to the first electrode is larger than an inclination angle of the first upper surface with respect to the first electrode; The manufacturing method, characterized in that the groove is formed at a position away from the opening and overlapping the outer region in a plan view on the first upper surface.

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