Bonding device and method for manufacturing solid-state image pickup device

Abstract

To provide a technique that enables a workpiece to follow the inclination of a semiconductor chip.SOLUTION: A bonding device includes a syringe for applying a paste adhesive onto a semiconductor chip mounted on a substrate, a bonding head having a collet for sucking a workpiece at its tip and placing the workpiece on the paste adhesive applied by the syringe, and a control unit configured to release the adsorption of the workpiece by the collet to drop the workpiece on the paste adhesive at a position where the distance between the highest position of the paste adhesive applied on the semiconductor chip and the workpiece is within a predetermined range.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to a bonding apparatus and is applicable, for example, to a bonding apparatus that bonds a workpiece to a semiconductor chip. [Background technology]

[0002] A bonding device is a device that bonds (places and adheres) a semiconductor chip or the like onto a substrate such as a wiring board or a lead frame, or onto an already bonded semiconductor chip, using a bonding material such as a resin paste. A bonding device repeatedly performs the following operations (tasks): for example, a suction nozzle called a collet attached to the tip of a bonding head is used to suction and pick up a semiconductor chip or the like from a semiconductor wafer, etc., and then the device places the semiconductor chip or the like in a predetermined position on the substrate and bonds it by applying a pressing force.

[0003] A solid-state imaging device is composed of, for example, a semiconductor chip on which an image sensor and a microlens are formed, a wiring board on which the semiconductor chip is mounted, and a cover glass to protect the semiconductor chip. When performing color imaging, a color filter is formed between the image sensor and the microlens. Some semiconductor chips have a laminated structure formed by bonding multiple semiconductor substrates. The semiconductor chip and the cover glass are bonded with an adhesive formed on the periphery. Here, the image sensor is composed of a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor). As the cover glass, for example, functional glass provided with various functional layers such as AR (anti-reflection), IR (infrared) cut, and gas barrier depending on the application may be used. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-12695 A Summary of the Invention [Problem to be solved by the invention]

[0005] For example, in the manufacture of solid-state imaging devices, a paste-like adhesive may be applied onto a semiconductor chip placed on a wiring board (substrate), and a workpiece such as a cover glass (glass chip) may be bonded onto the paste-like adhesive. When a semiconductor chip is mounted on a substrate at an angle due to warping of the substrate or unevenness of the adhesive that bonds the semiconductor chip and substrate, it may be necessary to maintain the inclination of the placed workpiece so as to match the semiconductor chip. However, since the bonding head holds the workpiece horizontally, when the bonding head places the workpiece on the paste-like adhesive, the workpiece is partially pressed into the paste-like adhesive. As a result, the workpiece may not be able to match the inclination of the semiconductor chip.

[0006] The object of the present disclosure is to provide a technique that enables a workpiece to follow the inclination of a semiconductor chip. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0007] A brief summary of representative aspects of this disclosure is given below. That is, the bonding apparatus comprises a syringe that applies a paste-like adhesive onto a semiconductor chip mounted on a substrate, a bonding head having a collet at the tip of the syringe that adsorbs a workpiece and places the workpiece on the paste-like adhesive applied by the syringe, and a control unit configured to release the adsorption of the workpiece by the collet and drop the workpiece onto the paste-like adhesive at a position where the distance between the highest point of the paste-like adhesive applied on the semiconductor chip and the workpiece is within a predetermined range. Effect of the Invention

[0008] The above-described bonding apparatus enables the workpiece to follow the inclination of the semiconductor chip. [Brief description of the drawings]

[0009] [Figure 1] 1 is a top view showing an outline of a bonding apparatus according to an embodiment; [Diagram 2] 2 is a cross-sectional view showing an outline of a chip supply unit shown in FIG. 1. [Diagram 3] 2 is a side view showing an outline of the preform part shown in FIG. 1. [Figure 4] 2 is a side view showing an outline of a chip supply unit and a bonding unit shown in FIG. 1. [Diagram 5] 2 is a flowchart showing a method for manufacturing a solid-state imaging device using the bonding apparatus shown in FIG. [Figure 6] 2 is a diagram showing an outline of a solid-state imaging device manufactured by the bonding apparatus shown in FIG. [Figure 7] 7A to 7C are diagrams illustrating a method for manufacturing the solid-state imaging device shown in FIG. [Figure 8] 7A to 7C are diagrams for explaining problems with the method for manufacturing the solid-state imaging device shown in FIG. [Figure 9] 7A to 7C are diagrams illustrating a manufacturing method of the embodiment of the solid-state imaging device shown in FIG. 6. [Figure 10] 7A to 7C are diagrams illustrating a manufacturing method of a first modified example of the solid-state imaging device shown in FIG. 6. [Figure 11] 13A and 13B are diagrams illustrating a solid-state imaging device after application of a paste adhesive in a second modified example. [Figure 12] 13A to 13C are diagrams illustrating a method for manufacturing a solid-state imaging device according to a second modified example in which the semiconductor chip is mounted without being tilted relative to the substrate. [Figure 13] 13A to 13C are diagrams illustrating a method for manufacturing a solid-state imaging device according to a second modified example in which a semiconductor chip is mounted at an angle with respect to a substrate. [Figure 14] 13A and 13B are diagrams illustrating a solid-state imaging device after application of a paste adhesive in a third modified example. [Figure 15]13A to 13C are diagrams illustrating a manufacturing method of a solid-state imaging device according to a third modified example in which a semiconductor chip is mounted without being tilted relative to a substrate. [Figure 16] 13A to 13C are diagrams illustrating a method for manufacturing a solid-state imaging device according to a third modified example in which a semiconductor chip is mounted at an angle with respect to a substrate. [Figure 17] 13A and 13B are diagrams illustrating a solid-state imaging device after application of a paste adhesive in a fourth modified example. [Figure 18] 13 is a diagram illustrating a vacuum suction system of a collet of a bonding head in a fifth modified example. FIG. [Figure 19] 1A to 1C are diagrams illustrating how a workpiece falls while tilting in four directions. [Figure 20] 13 is a diagram illustrating a vacuum suction system of a collet of a bonding head in a sixth modified example. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that, in order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present disclosure.

[0011] The configuration of a bonding apparatus in an embodiment will be described with reference to Fig. 1 to Fig. 4. Fig. 1 is a top view showing an outline of the bonding apparatus in an embodiment. Fig. 2 is a cross-sectional view showing an outline of the chip supply unit shown in Fig. 1. Fig. 3 is a side view showing an outline of the preform unit shown in Fig. 1. Fig. 4 is a side view showing an outline of the chip supply unit and bonding unit shown in Fig. 1.

[0012] As shown in Fig. 1, the bonding apparatus 10 mainly includes a chip supply unit 1 that supplies a workpiece DG to be mounted on a substrate S, a preform unit 9, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate unloading unit 7, and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the bonding apparatus 10, and the X-axis direction is the left-right direction. The chip supply unit 1 is disposed on the front side of the bonding apparatus 10, and the bonding unit 4 is disposed on the back side. Here, semiconductor chips D are mounted on multiple product areas on the substrate S that will eventually become one package.

[0013] As shown in FIG. 2, the chip supply unit 1 has a wafer holder 12 that holds a wafer 11, and a push-up unit 13 that pushes up a workpiece DG from the wafer 11. Here, the workpiece DG is, for example, a glass chip. The wafer 11 is a disk-shaped glass plate to which a dicing tape 16 is attached, and is diced and divided into a plurality of glass chips. The wafer holder 12 has an expand ring 15 that holds a wafer ring 14, and a support ring 17 that horizontally positions the dicing tape 16 held by the wafer ring 14 and to which a plurality of workpieces DG are attached. The push-up unit 13 is disposed inside the support ring 17. The control unit 8 moves the wafer holder 12 in the X-axis direction and the Y-axis direction by a driving means (not shown), and moves the workpiece DG to be picked up to the position of the push-up unit 13 (pickup position).

[0014] When the wafer holder 12 pushes up the workpiece DG, it lowers the expand ring 15 holding the wafer ring 14. As a result, the dicing tape 16 held by the wafer ring 14 is stretched and the intervals between the workpieces DG are increased, and the push-up unit 13 pushes up the workpieces DG from below, improving the pick-up ability of the workpieces DG.

[0015] 3, the preform unit 9 has a syringe 91, a drive unit (not shown) that moves the syringe 91 in the X-axis direction, the Y-axis direction, and the up-down direction, and a preform camera 94 as an imaging device that grasps the application position of the syringe 91. The preform unit 9 applies the paste adhesive PA with the syringe 91 to the semiconductor chip D mounted on the substrate S that has been transported by the transport unit 5. The syringe 91 is filled with the paste adhesive, and is configured so that the paste adhesive PA is pushed out by air pressure from the tip of a nozzle 92 and applied to the semiconductor chip D mounted on the substrate S.

[0016] 4, the bonding unit 4 has a bonding head 41 equipped with a collet 42 that suction-holds the workpiece DG at its tip, a Y-drive unit (not shown) that moves the bonding head 41 in the Y-axis direction, and a board recognition camera 44 that captures an image of a position recognition mark (not shown) on the board S to recognize the bonding position. The bonding unit 4 picks up the workpiece DG from the chip supply unit 1 and bonds it onto the semiconductor chip D on the conveyed board S that has been coated with a paste-like adhesive PA. At this time, the bonding head 41 corrects the pick-up position and attitude based on the image data captured by the wafer recognition camera 24, picks up the workpiece DG from the wafer 11, and bonds the workpiece DG onto the semiconductor chip D mounted on the board based on the image data captured by the board recognition camera 44.

[0017] 1, the transport section 5 has a transport lane 52 as a transport path along which the substrate S moves. With this configuration, the substrate S moves from the substrate supply section 6 along the transport lane 52 to a coating position, moves to a bonding position after coating, and after bonding, moves to the substrate unloading section 7 to deliver the substrate S to the substrate unloading section 7.

[0018] The control unit 8 includes a memory that stores a program (software) that monitors and controls the operation of each of the above-mentioned parts of the bonding apparatus 10, and a central processing unit (CPU) that executes the program stored in the memory.

[0019] Next, a method for manufacturing a solid-state imaging device using the bonding apparatus in the embodiment will be described with reference to Fig. 5. Fig. 5 is a flow chart showing the method for manufacturing a solid-state imaging device using the bonding apparatus shown in Fig. 1.

[0020] (Step S11: Wafer / substrate loading process) A wafer cassette (not shown) storing a wafer ring holding dicing tape 16 to which workpiece DG separated from wafer 11 is attached is carried into bonding apparatus 10. Control unit 8 supplies wafer ring 14 from the wafer cassette in which it is stored to chip supply unit 1. In addition, substrate S on which semiconductor chip D is mounted is prepared, and is carried into the substrate supply unit of bonding apparatus 10.

[0021] (Step S12: Preforming process) The control unit 8 uses the preform camera 94 to obtain an image of the surface of the semiconductor chip D mounted on the substrate S before application, and confirms the surface to which the paste adhesive PA is to be applied. If there are no problems with the surface to be applied, the control unit 8 applies the paste adhesive PA from the syringe 91 to the semiconductor chip D mounted on the substrate S transported by the transport unit 5. The paste adhesive PA is, for example, a UV-curable adhesive. After application, the control unit 8 uses the preform camera 94 to check again whether the paste adhesive PA has been applied accurately, and inspects the applied paste adhesive PA. If there are no problems with the application, the control unit 8 transports the substrate S to the bonding stage 45 by the transport unit 5.

[0022] (Step S13: Bonding process) Control unit 8 moves wafer 11 so that wafer holder 12 can pick up desired workpiece DG from wafer 11, and performs positioning and surface inspection based on data captured by wafer recognition camera 24. Control unit 8 calculates the amount of deviation (X, Y, and θ directions) of workpiece DG on wafer holder 12 from the workpiece position reference point of bonding device 10 by image processing. Note that the workpiece position reference point is previously held at a predetermined position of wafer holder 12 as the initial setting of the device. Control unit 8 then performs surface inspection of workpiece DG by image processing.

[0023] Furthermore, the control unit 8 captures an image of the substrate S placed on the bonding stage 45 using the substrate recognition camera 44. The control unit 8 calculates the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the bonding device 10 by image processing. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 4 as an initial setting for the device.

[0024] Then, the control unit 8 translates and lowers the bonding head 41 to directly above the workpiece DG to be picked up, corrects the suction position of the bonding head 41 from the calculated amount of deviation of the workpiece DG, and vacuum-sucks the workpiece DG with the collet 42. The control unit 8 raises, moves horizontally, and lowers the bonding head 41 that has sucked the workpiece DG from the wafer 11, and attaches the workpiece DG to a predetermined location of the semiconductor chip D mounted on the substrate S on the bonding stage 45. Then, the control unit 8 performs an inspection based on image data captured by the substrate recognition camera 44 to determine whether the workpiece DG has been bonded at the desired position, etc.

[0025] (Step S14: Substrate removal process) The control unit 8 transports the substrate S to which the workpiece DG is bonded to the substrate unloading unit 7. The control unit 8 removes the substrate S to which the workpiece DG is bonded from the substrate unloading unit 7. The substrate S is unloaded from the bonding apparatus 10.

[0026] Next, in order to clarify this embodiment, the structure and manufacturing method of the solid-state imaging device manufactured by the bonding apparatus in this embodiment will be described with reference to Figures 6 and 7. Figure 6 is a diagram showing an outline of the solid-state imaging device manufactured by the bonding apparatus shown in Figure 1, where Figure 6(a) is a top view and Figure 6(b) is a side view. Figure 7 is a diagram explaining the manufacturing method of the solid-state imaging device shown in Figure 6, where Figure 7(a) is a side view showing the state before the workpiece is placed and Figure 7(b) is a side view showing the state after the workpiece is placed.

[0027] As shown in FIG. 6(b), the solid-state imaging device is constructed by stacking a semiconductor chip D, a paste-like adhesive PA, and a workpiece DG in this order on a substrate S. As shown in FIG. 6(a), the substrate S, the semiconductor chip D, and the workpiece DG are each rectangular in a plan view. The substrate S, the semiconductor chip D, and the workpiece DG are smaller in size in that order. The paste-like adhesive PA is annular in a plan view, and its size is equal to or slightly smaller than that of the workpiece DG. The thickness of the workpiece DG is, for example, about 400 μm, and the height of the paste-like adhesive is, for example, about 125 μm.

[0028] The semiconductor chip D is mounted on the substrate S in advance, and the paste adhesive PA is applied onto the semiconductor chip D in the preform section 9. Then, the bonding head 41 suction-holds the workpiece DG with the collet 42 and transports it to directly above the semiconductor chip on which the paste adhesive PA has been applied. At this time, the collet 42 of the bonding head 41, which holds the workpiece DG and performs bonding, is usually positioned horizontally as shown in FIG. 7(a). In this state, the workpiece DG is pushed into a predetermined position and bonded as shown in FIG. 7(b). Ideally, the gap between the semiconductor chip D and the workpiece DG (the height of the paste adhesive PA) after bonding will be uniform (KA=KB).

[0029] Next, a problem that occurs when bonding a workpiece DG to a semiconductor chip D mounted at an angle on a substrate S will be described with reference to Fig. 8. Fig. 8 is a diagram for explaining the problem with the method for manufacturing a solid-state imaging device shown in Fig. 6, in which Fig. 8(a) is a side view showing the state before the workpiece is placed, and Fig. 8(b) is a side view showing the state after the workpiece is placed.

[0030] As shown in FIG. 8(a), when the semiconductor chip D mounted on the substrate S is inclined with respect to the upper surface of the substrate S, as shown in FIG. 8(b), the work DG is pressed in horizontally as it is, so that, with respect to the horizontal bonding stage 45 as a reference, the gap (KA) between the semiconductor chip D and the work DG is narrow at the high part (left side of the figure) of the semiconductor chip D and the gap (KB) between the semiconductor chip D and the work DG is wide at the low part (right side of the figure), resulting in uneven gaps (KA <KB)。

[0031] A method for manufacturing a solid-state imaging device in this embodiment that solves the above problems will be described with reference to Fig. 9. Fig. 9 is a diagram for explaining a method for manufacturing the embodiment of the solid-state imaging device shown in Fig. 6, in which Fig. 9(a) is a side view showing the state immediately before the workpiece is dropped, Fig. 9(b) is a side view showing the state immediately after the workpiece has been dropped, and Fig. 9(c) is a side view showing the state in which the workpiece has been placed.

[0032] As shown in FIG. 9(a), the control unit 8 stops the lowering operation of the bonding head 41 at a position where the work DG held by the collet 42 is a predetermined distance (Ha) away from the highest height of the paste adhesive PA applied on the semiconductor chip D. Then, as shown in FIG. 9(b), the control unit 8 releases the suction of the work DG by the collet 42, drops it, and places the work DG on the semiconductor chip D. As shown in FIG. 9(c), when the application height of the paste adhesive PA is uniform, the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB). Note that when the suction of the work DG by the collet 42 is released, the lowering operation of the bonding head 41 does not need to be stopped. For example, the lowering operation of the bonding head 41 may be stopped after the suction of the work DG by the collet 42 is released.

[0033] Here, the predetermined interval (Ha) is a height at which the paste adhesive PA is not pushed in by the falling of the workpiece DG, and is preferably 0 μm or more and 50 μm or less. Also, the height (H) at which the collet 42 releases the workpiece DG is set to a position at which the predetermined interval (Ha) is always 0 μm or more and 50 μm or less, taking into consideration the variation in the heights of the paste adhesive PA, the semiconductor chip D, and the substrate S. That is, in this embodiment, the height (Hb) of the paste adhesive PA is not measured every time the workpiece DG is placed. Here, the height (H) is, for example, the height from the upper surface of the bonding stage 45 to the lower surface of the workpiece DG.

[0034] According to this embodiment, the collet 42 of the bonding head 41 does not push the workpiece DG into the paste-like adhesive PA. This allows the workpiece DG to conform to the paste-like adhesive PA. Therefore, when the paste-like adhesive PA is applied to a uniform height, the workpiece DG can be placed parallel to the semiconductor chip D even if the semiconductor chip D is tilted.

[0035] Furthermore, according to this embodiment, when the semiconductor chip D is tilted, the workpiece DG is placed on the semiconductor chip D so as to tilt the workpiece DG from a state in which the surface of the paste-like adhesive PA including the semiconductor chip D is not parallel to the workpiece DG to be placed. This allows the workpiece DG to be placed while removing the air inside the annularly applied paste-like adhesive PA, and suppresses the external expansion of the paste-like adhesive PA.

[0036] <Modification> Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned embodiment and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

[0037] (First Modification) The manufacturing method of the solid-state imaging device in the first variant will be explained using Figure 10. Figure 10 is a diagram explaining the manufacturing method of the first variant of the solid-state imaging device shown in Figure 6, where Figure 10(a) is a side view showing the state during the collet's downward operation, Figure 10(b) is a side view showing the state just before the workpiece is dropped, and Figure 10(c) is a side view showing the state with the workpiece placed.

[0038] In the embodiment, the height (Hb) of the paste adhesive PA applied to the semiconductor chip D (including variations in the paste adhesive PA, the semiconductor chip D, and the substrate S) is evaluated beforehand prior to continuous operation, and the height (H) at which the collet 42 releases the workpiece DG is always set to a position that is a predetermined interval (Ha). In this modified example, during continuous operation, after the paste adhesive PA is applied, the height (Hb) from the top surface of the preform stage 95 or the bonding stage 45 to the highest part of the paste adhesive PA is measured for each substrate, each row, or each application by a range finder 46 using a sensor or optical camera, etc., and the height at which the collet 42 releases the workpiece DG is set to a position that is Hb.

[0039] 10(a), the semiconductor chip D is tilted with respect to the substrate S. The paste adhesive PA is applied to a uniform height. In this case, the portion where the height of the paste adhesive PA is higher than other portions within the application area of ​​the annular paste adhesive PA is the highest side of the semiconductor chip D placed on the substrate S.

[0040] As shown in FIG. 10(b), when the height of the bonding head 41 reaches the same height as the highest height (Hb) of the paste-like adhesive PA applied on the semiconductor chip D of the work DG held by the collet 42, the control unit 8 stops the downward movement of the bonding head 41. At this time, the distance (KA) between the semiconductor chip D and the work DG at the highest position of the paste-like adhesive PA is smaller than the distance (KB) between the semiconductor chip D and the work DG at the lowest position of the paste-like adhesive PA (KA < KB). Then, when the control unit 8 releases the adsorption of the work DG by the collet 42 and drops the work DG, as shown in FIG. 10(c), the work DG is placed on the semiconductor chip D. At this time, the distance between the semiconductor chip D and the work DG becomes uniform (KA = KB).

[0041] In this modified example, at the height (H = Hb, Ha = 0) where the work DG contacts the highest part of the paste-like adhesive PA, the work DG is released from the collet 42. That is, at the moment when the work DG contacts the paste-like adhesive PA, the work DG is released from the collet 42. As a result, when the work DG is released from the collet 42, the work DG is in contact with one side of the annular paste-like adhesive PA, so that it is possible to suppress the work DG from shifting and falling. That is, it is possible to suppress the positional deviation of the work DG when dropping the work DG. In addition, it is possible to suppress the θ deviation of the work DG when dropping the work DG.

[0042] (Second Modified Example) A method for manufacturing a solid-state imaging device in the second modified example will be described with reference to Figs. 11 to 13. Fig. 11 is a diagram for explaining a solid-state imaging device after application of a paste-like adhesive in the second modified example, Fig. 11(a) is a top view of a main part of the solid-state imaging device, and Fig. 11(b) is a side view of the solid-state imaging device shown in Fig. 11(a) before a workpiece is placed on the solid-state imaging device. Fig. 12 is a diagram for explaining a method for manufacturing a solid-state imaging device in the second modified example when a semiconductor chip is mounted without tilting with respect to a substrate, Fig. 12(a) is a side view showing a state during a collet descending operation, Fig. 12(b) is a side view showing a state immediately before a workpiece is dropped, and Fig. 12(c) is a side view showing a state in which a workpiece is placed. Fig. 13 is a diagram for explaining a method for manufacturing a solid-state imaging device in the second modified example when a semiconductor chip is mounted with a tilt with respect to a substrate, Fig. 13(a) is a side view showing a state during a collet descending operation, Fig. 13(b) is a side view showing a state immediately before a workpiece is dropped, and Fig. 13(c) is a side view showing a state in which a workpiece is placed.

[0043] In the embodiment and the first modified example, the application height of the paste adhesive PA is uniform, but in the second modified example, as shown in Fig. 11(b), one protrusion PAa is provided that is higher than the application height of the annular paste adhesive PA. As shown in Fig. 11(a), the protrusion PAa is the application start point and end point of the annular paste adhesive PA. The protrusion PAa may be formed by changing the discharge amount per unit time of the nozzle 92 provided on the syringe 91 or slowing down the nozzle operation. The protrusion PAa is circular in top view, and its size is approximately the same as the width of the applied annular paste adhesive PA.

[0044] 12(a), the semiconductor chip D is mounted without being tilted relative to the substrate S. In this case, the portion where the height of the paste-like adhesive PA is the highest compared to other portions within the application area of ​​the annular paste-like adhesive PA is the protruding portion PAa.

[0045] As shown in FIG. 12(b), the control unit 8 stops the lowering operation of the bonding head 41 at a position where the work DG held by the collet 42 is at the same height as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. At this time, the distance (A) between the semiconductor chip D and the work DG at the protruding portion PAa is the same as the distance (B) between the semiconductor chip D and the work DG at other positions of the protruding portion PAa of the paste adhesive PA (KA=KB). Then, the control unit 8 releases the suction of the work DG by the collet 42 and drops the work DG, and the work DG is placed on the semiconductor chip D as shown in FIG. 12(c). At this time, the protruding portion PAa is flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

[0046] 13(a), the semiconductor chip D is tilted with respect to the substrate S. In this case, the portion of the paste-like adhesive PA that is higher than other portions within the application area of ​​the annular paste-like adhesive PA is the protruding portion PAa. Here, the protruding portion PAa is higher than the height of the upper surface of the paste-like adhesive PA at the highest side of the semiconductor chip D when the semiconductor chip D is mounted at an angle with respect to the substrate S.

[0047] As shown in FIG. 13(b), the control unit 8 stops the lowering operation of the bonding head 41 at a position where the work DG held by the collet 42 is at the same height as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. At this time, the distance (KA) between the semiconductor chip D and the work DG at the protruding portion PAa is larger than the distance (KB) between the semiconductor chip D and the work DG at the highest side of the semiconductor chip D (KA>KB). Then, the control unit 8 releases the suction of the work DG by the collet and drops the work DG, and the work DG is placed on the semiconductor chip D as shown in FIG. 13(c). At this time, the protruding portion PAa is flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

[0048] In this modified example, the workpiece DG is released from the collet 42 at a height (H=Hb, Ha=0) where the workpiece DG comes into contact with the protruding portion PAa of the paste adhesive PA. That is, the workpiece DG is released from the collet 42 at the moment (the moment) where the workpiece DG comes into contact with the protruding portion PAa. This makes it possible to prevent the workpiece DG from shifting and falling when the workpiece DG is released from the collet 42. That is, it is possible to prevent the workpiece DG from shifting in position when the workpiece DG is dropped.

[0049] (Third Modification) A method for manufacturing a solid-state imaging element in the third modified example will be described with reference to Figs. 14 to 16. Fig. 14 is a diagram for explaining a solid-state imaging device after application of a paste-like adhesive in the third modified example, Fig. 14(a) is a top view of a main part of the solid-state imaging device, and Fig. 14(b) is a side view of the solid-state imaging device shown in Fig. 14(a) before a workpiece is placed on the solid-state imaging device. Fig. 15 is a diagram for explaining a method for manufacturing a solid-state imaging device in the third modified example when a semiconductor chip is mounted without tilting with respect to a substrate, Fig. 15(a) is a side view showing a state during a collet descending operation, Fig. 15(b) is a side view showing a state immediately before a workpiece is dropped, and Fig. 15(c) is a side view showing a state in which a workpiece is placed. Fig. 16 is a diagram for explaining a method for manufacturing a solid-state imaging device in the third modified example when a semiconductor chip is mounted with a tilt with respect to a substrate, Fig. 16(a) is a side view showing a state during a collet descending operation, Fig. 16(b) is a side view showing a state immediately before a workpiece is dropped, and Fig. 16(c) is a side view showing a state in which a workpiece is placed.

[0050] In the second modified example, one protrusion PAa is provided on the annular paste adhesive PA, but in the third modified example, as shown in Fig. 14, two protrusions PAa, PAb are provided on the annular paste adhesive PA. As in the second modified example, the protrusions PAa, PAb are the application start and end points of the annular paste adhesive PA. The protrusions PAa, PAb may be formed by changing the discharge amount per unit time of the nozzle 92 provided on the syringe 91 or by slowing down the nozzle movement speed.

[0051] 15(a), the semiconductor chip D is mounted without being tilted relative to the substrate S. In this case, the portions of the application area of ​​the annular paste-like adhesive PA where the paste-like adhesive PA is tallest are the protrusions PAa and PAb.

[0052] As shown in FIG. 15(b), the control unit 8 stops the lowering operation of the bonding head 41 at a position where the work DG held by the collet 42 is at the same height as the highest height (Hb) of the paste adhesive PA applied on the semiconductor chip D. At this time, the distance (KA) between the semiconductor chip D and the work DG at the protruding portion PAa is the same as the distance (KB) between the semiconductor chip D and the work DG at the protruding portion PAb (KA=KB). Then, the control unit 8 releases the suction of the work DG by the collet 42 and drops the work DG, and the work DG is placed on the semiconductor chip D as shown in FIG. 15(c). At this time, the protruding portions PAa and PAb are flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

[0053] 16(a), the semiconductor chip D is tilted with respect to the substrate S. In this case, the portion where the height of the paste-like adhesive PA is higher than other portions within the application area of ​​the annular paste-like adhesive PA is the protrusion PAb. Here, the protrusion PAa is lower than the height of the protrusion PAb at the highest side of the semiconductor chip D when the semiconductor chip D is mounted at an angle with respect to the substrate S.

[0054] As shown in FIG. 16(b), the control unit 8 stops the lowering operation of the bonding head 41 at a position where the work DG held by the collet 42 is at the same height as the height of the protruding portion PAa of the paste-like adhesive PA applied on the semiconductor chip D. At this time, the upper portion of the protruding portion PAb is crushed by the work DG, so the distance (KA) between the semiconductor chip D and the work DG at the protruding portion PAa is larger than the distance (KB) between the semiconductor chip D and the work DG at the highest side of the semiconductor chip D (KA>KB). Then, the control unit 8 releases the suction of the work DG by the collet 42 and drops the work DG, so that the work DG is placed on the semiconductor chip D as shown in FIG. 16(c). At this time, the protruding portion PAa is flattened by the load of the work DG, and the distance between the semiconductor chip D and the work DG becomes uniform (KA=KB).

[0055] In this modification, the workpiece DG is released from the collet 42 at a height (H=Hb, Ha=0) where the workpiece DG contacts the protruding portion PAa of the paste adhesive PA. This makes it possible to prevent the workpiece DG from shifting and falling when the workpiece DG is released from the collet 42. In other words, it is possible to prevent the workpiece DG from shifting when the workpiece DG is dropped. Also, it is possible to prevent the θ shift of the workpiece DG when the workpiece DG is dropped.

[0056] (Fourth Modification) The manufacturing method of the solid-state imaging element in the fourth modified example will be described with reference to Fig. 17. Fig. 17 is a diagram for explaining the solid-state imaging device after application of the paste-like adhesive in the fourth modified example, Fig. 17(a) is a top view of the main part of the solid-state imaging device, and Fig. 17(b) is a side view of the solid-state imaging device shown in Fig. 17(a) before a workpiece is placed on it.

[0057] In the third modified example, one protrusion PAa, PAb is provided on each of the two opposing sides of the annular paste adhesive PA, but in the fourth modified example, as shown in FIG. 17, two protrusions PAa, PAb may be provided on one side of the annular paste adhesive PA. The protrusions PAa, PAb are the application start and end points of the annular paste adhesive PA, as in the third modified example. The protrusions PAa, PAb may be formed by changing the discharge amount per unit time of the nozzle 92 provided on the syringe 91 or slowing down the nozzle operation. In this modified example, the method of placing the work DG on the semiconductor chip D to which the annular paste adhesive PA is applied is the same as in the third modified example. This makes it possible to prevent the work DG from shifting and falling when the work DG is released from the collet 42. That is, it is possible to prevent the work DG from shifting when the work DG is dropped. It is also possible to prevent the θ shift of the work DG when the work DG is dropped.

[0058] (Fifth Modification) A method for manufacturing a solid-state imaging device in the fifth modified example will be described with reference to Fig. 18 and Fig. 19. Fig. 18 is a diagram for explaining a vacuum suction system of a collet of a bonding head in the fifth modified example, Fig. 18(a) is a top view, Fig. 18(b) is a plan view of line AA in Fig. 18(a), and Fig. 18(c) is a bottom view. Fig. 19 is a diagram for explaining that a workpiece falls tilted in four directions, Fig. 19(a) is a side view showing a state where suction is released from the front side, Fig. 19(b) is a side view showing a state where suction is released from the rear side, Fig. 19(c) is a side view showing a state where suction is released from the right side, and Fig. 19(d) is a side view showing a state where suction is released from the left side.

[0059] The collet 42 has four independent vacuum suction systems IA, IB, IC, and ID. Each of the vacuum suction systems IA, IB, IC, and ID has a plurality of suction ports 42a, which are openings provided on the lower surface (bottom surface) of the collet 42, a horizontal suction section 42b that communicates between the plurality of suction ports 42a, and a vertical suction section 42c that communicates with the horizontal suction section 42b. The lower surface of the collet 42, which is in contact with the upper surface of the workpiece DG, is divided into four areas corresponding to the four vacuum suction systems IA, IB, IC, and ID. The lower surface of the collet 42 is rectangular and is divided into four areas by two diagonals. For example, the plurality of suction ports 42a of the vacuum suction system IB extend along the direction of one side of the lower surface of the collet 42 (the X-axis direction), and the outer suction ports 42a are long and the inner suction ports 42a are short.

[0060] When the suction of the front vacuum suction systems IB, IC, ID is released and then the suction of the rear vacuum suction system IA is released, as shown in Figure 19(a), the rear side of the workpiece DG remains adsorbed to the collet 42, while the front side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with the front side facing down.

[0061] When the suction of the rear vacuum suction systems ID, IA, and IB is released and then the suction of the front vacuum suction system IC is released, as shown in Figure 19(b), the front side of the workpiece DG remains adsorbed to the collet 42, while the rear side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with its rear side facing down.

[0062] When the suction of the right-side vacuum suction systems IA, IB, and IC is released and then the suction of the left-side vacuum suction system ID is released, as shown in Figure 19 (c), the left side of the workpiece DG remains adsorbed to the collet 42, while the right side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with the right side down.

[0063] When the suction of the left vacuum suction systems IC, IA, and ID is released and then the suction of the right vacuum suction system IB is released, as shown in Figure 19 (d), the right side of the workpiece DG remains adsorbed to the collet 42 while the left side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with the left side facing down.

[0064] By dividing the vacuum suction system of the collet into separate parts and staggering the timing of the suction release, it is possible to drop the chip at any angle. This makes it possible to drop the workpiece DG at an angle so that the air can escape, even if the top surface of the paste adhesive PA is flat and horizontal.

[0065] (Sixth Modification) A method for manufacturing a solid-state imaging element in the sixth modified example will be described with reference to Fig. 19 and Fig. 20. Fig. 20 is a diagram for explaining a vacuum suction system of a collet of a bonding head in the sixth modified example, Fig. 20(a) is a top view, and Fig. 20(b) is a bottom view.

[0066] The collet 42 has four independent vacuum suction systems IA, IB, IC, and ID. Each of the vacuum suction systems IA, IB, IC, and ID has a plurality of suction ports 42a, which are openings provided on the lower surface (bottom surface) of the collet 42, a plurality of horizontal suction parts 42b that communicate between the plurality of suction ports 42a, and a plurality of vertical suction parts 42c that communicate with the horizontal suction parts 42b. The lower surface of the collet 42, which contacts the upper surface of the workpiece DG, is divided into four areas corresponding to the four vacuum suction systems IA, IB, IC, and ID. The lower surface of the collet 42 is rectangular, and is divided into four areas by two straight lines passing through the midpoints of two opposing sides. For example, multiple suction ports 42a are arranged in a lattice pattern along the edges of the underside of collet 42, and the vertical suction portion 42c and the suction ports 42a located at the corners of collet 42 are linearly connected via horizontal suction portion 42b, and the other suction ports 42a are connected to this horizontal suction portion 42b directly or via other horizontal suction portions 42b.

[0067] When the suction of the front vacuum suction systems IA and ID is released and then the suction of the rear vacuum suction systems IB and IC is released, as shown in Figure 19(a), the rear side of the workpiece DG remains adsorbed to the collet 42, while the front side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with the front side facing down.

[0068] When the suction of the rear vacuum suction systems IB, IC is released and then the suction of the front vacuum suction systems IA, ID is released, as shown in Figure 19 (b), the front side of the workpiece DG remains adsorbed to the collet 42, while the rear side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with its rear side facing down.

[0069] When the suction of the right-side vacuum suction systems IA and IB is released and then the suction of the left-side vacuum suction systems IC and ID is released, as shown in Figure 19 (c), the left side of the workpiece DG remains adsorbed to the collet 42, while the right side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with the right side down.

[0070] When the suction of the left vacuum suction systems IC and ID is released and then the suction of the right vacuum suction systems IA and IB is released, as shown in Figure 19 (d), the right side of the workpiece DG remains adsorbed to the collet 42 while the left side of the workpiece DG is released from the collet 42, and the workpiece DG tilts with the left side facing down.

[0071] The disclosure made by the present inventors has been specifically described above based on embodiments and modified examples. However, it goes without saying that the present disclosure is not limited to the above-described embodiments and modified examples, and various modifications are possible.

[0072] For example, in the second to fourth modified examples, one or two protrusions are provided on the annular paste adhesive PA, but three or more protrusions may be provided.

[0073] In addition, in the fifth and sixth modified examples, four vacuum suction systems are provided, but two, three, five or more vacuum suction systems may be provided.

[0074] In the embodiment, the example of the glass chip as the workpiece DG has been described, but the workpiece in the semiconductor chip D having a light receiving element for light other than visible light (for example, infrared light) may be a silicon chip.

[0075] In addition, in the embodiment, an example has been described in which the paste-like adhesive PA is applied in a ring shape onto the semiconductor chip D, but when a semiconductor chip (die) separated from a semiconductor wafer is stacked on top of the semiconductor chip D, the paste-like adhesive PA may be applied on the semiconductor chip D in a shape other than a ring shape (for example, an X-shape or Z-shape).

[0076] In addition, in the embodiment, an example has been described in which the workpiece DG picked up from the chip supply unit 1 by the bonding head 41 is bonded to a semiconductor chip D mounted on the substrate S, but it is also possible to provide an intermediate stage between the chip supply unit 1 and the bonding unit 4, place the workpiece DG picked up from the chip supply unit 1 by the pickup head on the intermediate stage, and pick up the workpiece DG again from the intermediate stage by the bonding head 41 and bond it to the semiconductor chip D mounted on the substrate S. [Explanation of symbols]

[0077] 8. Control section 10. Bonding equipment 41 Bonding head 42 Collet 91...Syringe D Semiconductor chip DG... Work PA···Paste adhesive S... Substrate

Claims

1. a syringe for applying a paste adhesive onto a semiconductor chip mounted on a substrate; a bonding head having a collet at its tip for adsorbing a workpiece and for placing the workpiece on the paste adhesive applied by the syringe; a control unit configured to stop the descent of the bonding head at a position where a distance between the highest point of the paste adhesive applied on the semiconductor chip and the workpiece is within a predetermined range, release the suction of the workpiece by the collet positioned horizontally, and drop the workpiece onto the paste adhesive; Equipped with The predetermined range is a distance within which the paste adhesive is not pushed in by the lowering of the bonding head and the dropping of the workpiece.

2. 2. The bonding apparatus of claim 1, A bonding apparatus, wherein the predetermined range is 0 μm or more and 50 μm or less.

3. a syringe for applying a paste adhesive in a circular shape to a semiconductor chip mounted on a substrate; a bonding head having a collet at its tip for adsorbing a workpiece and for placing the workpiece on the paste adhesive applied by the syringe; A control unit; Equipped with The control unit is providing a protrusion when applying a ring-shaped paste adhesive onto the semiconductor chip using the syringe; The lowering operation of the bonding head is stopped at a position where the lower surface of the workpiece contacts the protruding portion; The collet is configured to release the suction of the workpiece so that the workpiece falls onto the paste-like adhesive, A bonding apparatus, wherein the protrusions are application start and end points of the paste adhesive.

4. 4. The bonding apparatus according to claim 3, The control unit is configured to measure the height of the protrusion using a sensor or an optical camera.

5. 4. The bonding apparatus according to claim 3, The bonding device has two or more protruding portions on the paste adhesive.

6. a syringe for applying a paste adhesive in a circular shape to a semiconductor chip mounted on a substrate; a bonding head having a collet at its tip for adsorbing a workpiece and for placing the workpiece on the paste adhesive applied by the syringe; A control unit; Equipped with The control unit is when applying the annular paste adhesive onto the semiconductor chip by the syringe, a protrusion is provided by changing the discharge amount per unit time of a nozzle of the syringe or slowing down a moving speed of the nozzle; A bonding apparatus configured to release the suction of the workpiece by the collet and drop the workpiece onto the paste adhesive.

7. 7. The bonding apparatus of claim 6, The control unit is configured to measure the height of the protrusion using a sensor or an optical camera.

8. 7. The bonding apparatus of claim 6, The bonding device has two or more protruding portions on the paste adhesive.

9. In the bonding apparatus according to any one of claims 1, 3 and 6, The control unit is a bonding apparatus configured to position the workpiece so that the bonding head releases the workpiece from a state in which the surface of the semiconductor chip on which the paste adhesive is applied and the workpiece are not parallel to each other.

10. 10. The bonding apparatus of claim 9, The control unit is configured to divide a vacuum suction system of the collet into a plurality of independent areas and to stagger the timing of releasing suction for each area.

11. A step of carrying a substrate on which a semiconductor chip is mounted into a bonding device having a bonding head having a collet at its tip for adsorbing a workpiece; a coating step of coating the semiconductor chip with a paste adhesive in a circular shape; a bonding step of placing the work on the paste adhesive; having The bonding step includes: stopping the lowering operation of the bonding head at a position where a distance between the highest point of the paste adhesive applied on the semiconductor chip and the workpiece is within a predetermined range; The collet is horizontally positioned to release the workpiece from its suction, thereby dropping the workpiece onto the paste adhesive; The method for manufacturing a solid-state imaging device, wherein the predetermined range is a distance that does not cause the paste adhesive to be pushed in by the descent of the bonding head and the drop of the workpiece.

12. A step of carrying a substrate on which a semiconductor chip is mounted into a bonding device having a bonding head having a collet at its tip for adsorbing a workpiece; a coating step of coating the semiconductor chip with a paste adhesive in a circular shape; a bonding step of placing the work on the paste adhesive; having The application step provides a protrusion when applying a circular paste-like adhesive onto the semiconductor chip, The bonding step includes: The lowering operation of the bonding head is stopped at a position where the lower surface of the workpiece contacts the protruding portion; The suction of the workpiece by the collet is released to drop the workpiece onto the paste-like adhesive; The method for manufacturing a solid-state imaging device, wherein the protrusion is a start point and an end point of application of the paste adhesive.

13. A step of carrying a substrate on which a semiconductor chip is mounted into a bonding device having a bonding head having a collet at its tip for adsorbing a workpiece; a coating step of coating the semiconductor chip with a paste adhesive in a circular shape; a bonding step of placing the work on the paste adhesive; having the applying step includes providing a protrusion by changing the discharge amount per unit time of a nozzle of a syringe or slowing down the moving speed of the nozzle when applying the annular paste adhesive onto the semiconductor chip; The bonding step includes: The lowering operation of the bonding head is stopped at a position where the lower surface of the workpiece contacts the protruding portion; The method for manufacturing a solid-state imaging device further comprises releasing the suction of the workpiece by the collet and dropping the workpiece onto the paste-like adhesive.

Images