SNSPDs with integrated aluminum nitride seed or waveguiding layers

Abstract

To provide a superconducting nano-wire single photon detector (SNSPD) including a seed layer under a metal nitride which provides a superconducting material.SOLUTION: An SNSPD device 100 includes: a substrate 22; a distribution Bragg reflector 24 on the substrate; a seed layer 102 of a metal nitride on the distribution Bragg reflector; and a superconducting core material 12 on the seed layer. The distribution Bragg reflector includes a plurality of double layers 26, and each double layer includes a lower layer 26 made of a first material and an upper layer 26b of a second material with a higher index of refraction than that of the first material. The superconducting core material 12 is a metal nitride different from the metal nitride of the seed layer 102.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to superconducting nanowire single photon detectors (SNSPDs) that include a seed layer under a metal nitride that provides a superconducting material. [Background technology]

[0002] In the context of superconductivity, the critical temperature (TC) refers to the temperature at which a material becomes superconducting. Niobium nitride (NbN) is a material that can be used in superconducting applications such as superconducting nanowire single photon detectors (SNSPDs) for use in quantum information processing, defect analysis in CMOS, LIDAR, etc. The critical temperature of niobium nitride depends on the crystal structure and atomic ratios of the material. For example, referring to Figure 1, cubic δ-phase NbN has several advantages due to its relatively "high" critical temperature, e.g., 9.7-16.5°K.

[0003] Niobium nitride can be deposited on a workpiece by physical vapor deposition (PVD). For example, a sputtering operation can be performed using a niobium target in the presence of nitrogen gas. Sputtering can be performed by inducing a plasma in a reactor chamber containing the target and the workpiece. Summary of the Invention

[0004] In one aspect, a superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconducting wire on the seed layer. The distributed Bragg reflector includes a plurality of bilayers, each bilayer including an underlayer of a first material and an overlayer of a second material having a higher refractive index than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

[0005] In another aspect, a superconducting nanowire single photon detector (SNSPD) includes a substrate, a distributed Bragg reflector on the substrate, a seed layer on the distributed Bragg reflector, and a superconducting wire on the seed layer. The distributed Bragg reflector includes a plurality of bilayers, each bilayer including an underlayer of aluminum nitride and an overlayer of a different material having a higher refractive index than aluminum nitride, the seed layer being aluminum nitride, and the superconducting wire being niobium nitride, titanium nitride, or niobium titanium nitride.

[0006] The implementation may provide one or more of the following advantages, including but not limited to: For example, devices based on absorption of photons by superconducting materials, such as SNSPDs, can achieve high material quality of the superconducting layer, such as niobium nitride, and thus higher critical temperatures, while providing high photon absorption efficiency. This allows the fabrication of devices, such as SNSPDs, using superconducting wires with higher critical temperatures. The larger difference between the operating temperature (2-3°K) and the critical temperature results in better detection efficiency, lower dark counts, and potentially faster time response.

[0007] It should be noted that "superconducting" indicates that the material becomes superconducting at the operating temperature of the device, e.g., 2-3° K. The material is not actually superconducting during fabrication of the device at temperatures above room temperature or when the device is not cooled for operation.

[0008] Details of one or more implementations are set forth in the accompanying drawings and the description below. Other potential aspects, features, and advantages will become apparent from the description, drawings, and claims. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 illustrates the phases of niobium nitride as a function of processing temperature and nitrogen atomic percentage. [Figure 2A] FIG. 1 is a schematic top view of an SNSPD including a distributed Bragg reflector. [Figure 2B] 2B is a schematic cross-sectional side view of the device of FIG. 2A. [Diagram 3] FIG. 1 is a schematic diagram of the operation of an SNSPD. [Figure 4] FIG. 1 is a schematic cross-sectional side view of an SNSPD including a distributed Bragg reflector and an aluminum nitride seed layer. [Diagram 5] 1 is a graph of reflectivity as a function of wavelength for two SNSPD designs. [Figure 6] 1 is a graph of critical temperature as a function of NbN layer thickness with and without an aluminum nitride seed layer. [Figure 7] 1 is a flowchart of a method for manufacturing an SNSPD. [Figure 8A] FIG. 1 is a schematic top view of an SNSPD including a waveguide. [Figure 8B] FIG. 8B is a schematic cross-sectional side view of the device of FIG. 8A. [Figure 9] FIG. 1 is a schematic cross-sectional side view of an SNSPD including a waveguide and an aluminum nitride seed layer. [Figure 10] FIG. 1 is a schematic cross-sectional side view of an SNSPD including a waveguide formed of aluminum nitride. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Like reference numbers and designations in the various drawings indicate like elements.

[0011] 2A and 2B show top and side views, respectively, of a conventional superconducting nanowire single photon detector (SNSPD) device 10. The SNSPD device 10 can include at least one superconducting wire 12 disposed on a support structure 20. The superconducting wire 12 can be connected between conductive electrodes 14. The superconducting wire 12 can be disposed on the support structure 20 in a serpentine pattern, e.g., parallel lines back and forth. In some implementations, multiple wires 12 are connected in parallel between the electrodes 14, with each wire 12 covering a separate area 16, although there may be only a single wire 12 that covers the entire detection area of ​​the device 10. Additionally, many other patterns are possible, e.g., zigzag and double helix. The superconducting wire can be considered to be a nanowire, and can have, for example, a width of about 30 nm and a thickness of about 10 nm.

[0012] The support structure 20 may include a substrate 22, e.g., a silicon substrate, and a mirror structure 24 disposed on the substrate 22. By way of example, the mirror structure 24 may be a distributed Bragg reflector (DBR) that includes multiple pairs of layers formed of high and low refractive index materials.

[0013] Conventional SNSPDs operate with photons (indicated by light beam 30) approaching from the top of the device 10, e.g., perpendicularly incident to the substrate 20. A simple device is a NbN nanowire placed directly on a silicon substrate (without mirror structures). The NbN nanowires are typically very thin in SNSPD devices, so most of the light is not absorbed by the NbN nanowires. To increase the light absorption efficiency, a mirror structure 24, e.g., a distributed Bragg reflector, is incorporated into the device 10 between the substrate 20 and the wire 12. In this case, the photon has a higher chance of being captured by the NbN nanowire, since incident photons that were not initially absorbed can be absorbed upon reflection.

[0014] Referring to Figure 3, the working principle of an SNSPD device is that photons to be detected come from above and illuminate the SNPSD. Absorption of the photon creates a hot spot on the NbN nanowire, raising the temperature of the NbN above the critical temperature and causing parts of the wire to no longer be superconducting. In the area around the hot spot, current crowding can occur, resulting in a current density higher than the critical current density and potentially destroying the superconducting state throughout the wire. The change of the NbN wire from the superconducting state to the normal resistive state can be detected electrically by passing a current through the device and monitoring the voltage difference between the electrodes.

[0015] NbN-based SNSPDs are mainly used in time-correlated single photon counting (TCPSC) related applications at visible and infrared wavelengths. For example, SNSPDs are used in quantum metrology (quantum key generation, quantum emitters) and optical quantum computing (detection modules) due to their high efficiency, low dark count, low timing jitter, and fast recovery time. They can also be used as detectors in conventional space-to-ground communication and time-of-flight LIDAR systems.

[0016] In the visible wavelength range, Si avalanche photodiodes (APDs) are typically used. The detection efficiency of the systems is not ideal, e.g., about 70%, and it is difficult to integrate these devices with chip-scale devices.

[0017] In the infrared wavelength range, InGaAs APDs are candidates for many applications. However, these devices usually suffer from high dark count rates and even lower system detection efficiencies (<30%), limiting their detection speed. Compared with APDs, SNSPDs have superior performance, including low timing jitter (<20ps), fast recovery time, high detection efficiency (>85%), and low dark count rates (approximately a few Hz).

[0018] As mentioned above, niobium nitride, especially δ-phase NbN, has some advantages as a superconducting material. However, it can be difficult to deposit δ-phase NbN with a satisfactory quality. A seed layer, for example an aluminum nitride (AlN) layer, under the (super)conducting layer can help improve the critical temperature of the NbN layer. An aluminum nitride (AlN) seed layer can also improve the critical temperature of TiN and NbTiN layers, and may also be useful for other metal nitride layers. In particular, aluminum nitride layers can be incorporated into SNSPD devices, especially into the mirror structure or waveguide of an SNSPD device. This can allow for a higher crystal quality of the metal nitride detector (and therefore a higher critical temperature and therefore better device performance) while also achieving high light absorption efficiency.

[0019] 4 shows a cross-sectional side view of a superconducting nanowire single-photon detector (SNSPD) device 100. The SNSPD device 100 may be similar to the device described above with respect to FIGS. 2A and 2B, except as described below.

[0020] The SNSPD includes a substrate 22, which can be a dielectric material, such as sapphire, SiO2, fused silica, or quartz, or a semiconductor material, such as silicon, gallium nitride (GaN), or gallium arsenide (GaAs).

[0021] A distributed Bragg reflector (DBR) 24 is fabricated on the substrate 22. The DBR 24 includes a plurality of bilayers 26, e.g., 2-8 bilayers, e.g., 7 bilayers. Each bilayer 26 includes a bottom layer 26a of a first material having a first refractive index ("low index"), and a top layer 26b of a second material having a second refractive index ("high index") greater than the first refractive index. The thickness and material (and thus the refractive index) of the bilayer 26 are selected to increase reflection at a selected wavelength or band of wavelengths. For example, the DBR may be optimized for reflection of light between about 1500 and 1600 nm, since 1550 nm is a wavelength that is widely used in optical communication systems.

[0022] Both the first and second materials may be selected from Table 1, subject to the restriction that the second material has a higher refractive index than the first material.

[0023] TIFF0007654846000001.tif63170

[0024] Overlying, e.g., in direct contact with, the top layer 26b of the top bilayer 26 of the distributed Bragg reflector is a metal nitride seed layer 102. The seed layer 102 and the superconducting wire 12 are nitrides of different metals. In particular, the seed layer 102 can be aluminum nitride (AlN) since this improves the critical temperature of NbN. However, hafnium nitride (HfN), gallium nitride (GaN) may also be suitable. The metal nitride seed layer 102 can have a thickness of about 4-50 nm, e.g., about 5 nm or about 10 nm or about 20 nm. The seed layer 102 can have a (002) c-axis crystallographic orientation. The seed layer 102 is not superconducting at the operating temperature of the device 100. The seed layer 102 can be deposited by standard chemical vapor deposition or physical vapor deposition processes.

[0025] In some implementations, the high refractive index material of the upper layer 26b is, for example, Ta2O5 with a thickness of about 182 nm, and the low refractive index material of the lower layer 26a is, for example, SiO2 with a thickness of about 263 nm. The reflectivity simulated by optical modeling software of a stack of seven such bilayers with a 20 nm thick AlN seed layer is shown by curve 120 in FIG.

[0026] In an embodiment of particular interest, the seed layer 102 is aluminum nitride and the low index material, i.e., the material of each lower layer 26a, is also aluminum nitride. This allows the seed layer 102 to be fabricated using the same processing conditions as the lower layers of the distributed Bragg reflector 24, simplifying processing requirements. In some implementations, the high index material is, for example, about 111 nm thick amorphous silicon (a-Si) and the low index material is, for example, about 197 nm thick AlN. The reflectivity simulated by optical modeling software of a stack of seven such bilayers with a 20 nm thick AlN seed layer is shown by curve 122 in FIG. 5.

[0027] The superconducting wire 12 is formed on, for example in direct contact with, the seed layer 102. The wire may be made of niobium nitride (NbN), titanium nitride (TiN), or niobium titanium nitride (Nb X Ti 1-X The wires 12 may have a width of about 25 to 250 nm, for example, about 60 nm, and a thickness of 4 to 50 nm, for example, about 5 nm or about 10 nm or about 20 nm.

[0028] The seed layer 102 helps improve the critical temperature of aluminum nitride, especially when the aluminum nitride layer is thin. For example, FIG. 6 shows the measured critical temperature T C (in Kelvin) as a function of the thickness of the NbN layer. Curve 130 shows the critical temperature without the aluminum nitride seed layer and curve 132 shows the critical temperature with the aluminum nitride seed layer (for a simplified stack of a silicon wafer, an AlN seed layer, and an NbN layer). Alternatively or additionally, the seed layer 102 can improve adhesion between the aluminum nitride layer 102 and the top layer 26b of the distributed Bragg reflector 24.

[0029] FIG. 7 is a flow chart of a method 200 for manufacturing the device 100 of FIG.

[0030] First, a distributed Bragg reflector (DBR) 24 is deposited on a substrate 100 (step 202). The substrate may be, for example, a silicon wafer. Although shown as a single block, the substrate 22 may include multiple underlying layers. The DBR 24 may be deposited by depositing alternating layers of high and low refractive index materials using standard chemical or physical vapor deposition processes.

[0031] Next, the seed layer 102 is deposited on the DBR 24 (step 204). As mentioned above, the seed layer 102 can be aluminum nitride. The seed layer can be deposited using standard chemical vapor deposition or physical vapor deposition processes. Exemplary process parameters are power applied to the sputtering target of 1-5 kW, total pressure (nitrogen and inert gas) of 2-20 mTorr, nitrogen gas and inert gas supplied in a ratio of 3:100 to 1:6, wafer temperature of 200-500° C., and no bias voltage applied to the wafer. In some implementations, the seed layer 102 is deposited in the same process chamber used to deposit the DBR 24, for example, by switching to a new target. This allows for high throughput manufacturing. Alternatively, the substrate can be transferred to another deposition chamber without breaking vacuum. In either case, the seed layer can be deposited without exposing the DBR to atmosphere, with low risk of contamination.

[0032] Next, a metal nitride layer 12, for example niobium nitride (NbN), titanium nitride (TiN), or niobium titanium nitride (Nb X Ti 1-XN) is deposited on the seed layer (step 206). The metal nitride layer 12 can be deposited using standard chemical vapor deposition or physical vapor deposition processes. Exemplary process parameters are a base pressure of 1e-8 Torr, power applied to the target of 1-3 kW, total pressure during processing of 5-7 mTorr, a wafer temperature of 400° C., no bias voltage applied to the wafer, and a percentage of gas as N2 sufficient to achieve cubic δ-phase NbN. In some implementations, the metal nitride layer 12 is deposited in the same process chamber used to deposit the seed layer 102, for example, by switching to a new target. This allows for high throughput manufacturing. Alternatively, the substrate can be transferred to another deposition chamber without breaking vacuum. This allows the metal nitride layer to be deposited without exposing the seed layer to the atmosphere, with low risk of contamination.

[0033] After depositing the metal nitride layer 12, a capping layer 104 may be deposited on the metal nitride layer 12 (step 208). The capping layer 104 functions, for example, as a protective layer to prevent oxidation or other types of contamination or damage of the metal nitride layer 12. The capping layer 104 may be dielectric or conductive, but is not superconducting at the operating temperature of the device 200. The capping layer 104 may be amorphous silicon (a-Si). In some implementations, the capping layer 104 is a nitride of a material different from the metal of the metal nitride used for the superconducting layer 12. Examples of materials for the capping layer 104 include AlN, Al2O3, SiO2, and SiN. The capping layer 104 may be deposited by standard chemical or physical vapor deposition processes.

[0034] Etching can be used to form trenches 108 through at least the metal nitride layer 12 to form conductive wires 12 or other structures required for the device 100 (step 210). While Figure 4 shows trenches through the metal nitride layer 12 and the capping layer 104, other configurations are possible. By way of example, the trenches can extend partially or completely through the seed layer 102. However, the trenches should not extend into the mirror structure 24.

[0035] Another form of superconducting nanowire single photon detector (SNSPD) device includes a waveguide for inputting photons to the detector along an axis approximately parallel to the surface of the substrate. Figures 8A and 8B show a conventional SNSPD 50 having such a waveguide. The SNSPD 50 can include at least one superconducting wire 52 disposed on a support structure 60. The support structure can include a substrate 62, e.g., a silicon substrate, a dielectric layer 64 on the substrate 62, and a waveguide 66 disposed on the dielectric layer 64. The dielectric layer 64 is a first material having a first refractive index, and the waveguide 66 is a second material having a second refractive index higher than the first refractive index.

[0036] The superconducting wires 52 can be considered nanowires and can have, for example, a width of about 30 nm and a thickness of about 10 nm. The superconducting wires 52 can be arranged to form a number of parallel wires, with adjacent wires connected at alternating ends. Although FIG. 8A shows four parallel wires, the device can have only two parallel wires, e.g., U-shaped wires, or a greater number of wires.

[0037] Photons, as represented by light beam 70, enter the device through the waveguide layer 66, for example from a side that is approximately parallel to the top surface of the substrate 62. In particular, the photons may enter along an axis (indicated by arrow A) that is approximately parallel to the parallel lines of the wires 52. Additionally, the wires 52 may be positioned near the center of the waveguide along an axis transverse to the direction of light propagation. For example, there may be a gap 58 between the outer edge of the wires 52 and the outer edge of the waveguide 66 on each side of the device. This gap 58 may have a width of about 25-30% of the total width of the waveguide.

[0038] Typically, the dielectric layer 64 below the waveguide 66 and the empty space or air above the waveguide 66 both have a lower refractive index than the waveguide 66, so photons in the waveguide 66 are trapped by total internal reflection. However, optical coupling between the waveguide 66 and the nanowire 52 allows photons to escape into the nanowire 52 and thus be absorbed by the nanowire 62. In this type of device, the optical coupling efficiency can be very high.

[0039] Figure 9 shows a cross-sectional side view of a waveguide configuration of a superconducting nanowire single photon detector (SNSPD) device 150. The SNSPD device 150 may be similar to the devices described above with respect to Figures 4 and 8, except as described below.

[0040] The SNSPD device 150 includes a substrate 62, such as a silicon substrate.

[0041] Overlying the top surface of substrate 62 is a dielectric layer 64. Dielectric layer 64 may be silicon oxide (SiO2), although other materials are possible having a refractive index less than that of waveguide 66. Dielectric layer 64 may have a thickness of at least 100 nm, for example between 200 and 2 μm.

[0042] The waveguide 66 is disposed on the dielectric layer 64. The waveguide 64 can be silicon nitride (Si3N4), although other materials having a refractive index greater than that of the dielectric layer 64 are possible. The particular thickness and width of the waveguide can be selected based on the wavelength of light to be captured and detected. The waveguide 66 can have a thickness of 400-500 nm, e.g., 450 nm, for 1550 nm light. The width of the waveguide 66, i.e., the width perpendicular to the propagation direction of the light entering the waveguide 66, can be 1.1-1.3 μm, e.g., 1.2 μm for 1550 nm light.

[0043] For example, there is a metal nitride seed layer 152 on the top surface of the waveguide 66 in direct contact with the waveguide 66. The seed layer 152 and the superconducting wire 52 are nitrides of different metals. In particular, the metal nitride of the seed layer 152 can be aluminum nitride (AlN) to improve the critical temperature of NbN. However, gallium nitride (GaN) may also be suitable. The seed layer 152 can have a thickness of about 4 to 50 nm, for example, about 5 nm or about 10 nm or about 20 nm. The seed layer 152 can have a (002) c-axis crystallographic orientation. The seed layer 152 is not superconducting at the operating temperature of the device 150.

[0044] The superconducting wire 52 is formed on, for example, directly in contact with, the seed layer 152. The wire may be made of niobium nitride (NbN), titanium nitride (TiN), or niobium titanium nitride (Nb X Ti 1-X The wires 52 may have a width of about 25 to 250 nm, for example, about 60 nm, and a thickness of 4 to 50 nm, for example, about 5 nm or about 10 nm or about 20 nm.

[0045] The capping layer 154 may cover the superconducting wire 52. The capping layer 154 functions as a protective layer to prevent, for example, oxidation or other types of contamination or damage of the metal nitride of the superconducting wire 52. The capping layer 154 may be dielectric or conductive, but is not superconducting at the operating temperature of the device 150. The capping layer 154 may be amorphous silicon (a-Si). In some implementations, the capping layer 154 is a nitride of a material different from the metal of the metal nitride used in the superconducting layer 52. Examples of materials for the capping layer 104 include AlN, Al2O3, SiO2, and SiN. The capping layer 104 may be deposited by standard chemical or physical vapor deposition processes.

[0046] The trenches separating the wires 52 may extend through the capping layer 154, the superconducting layer that provides the wires 52, and the seed layer 152. The trenches need not extend into the waveguide.

[0047] 10 illustrates a cross-sectional side view of another embodiment of a waveguide configuration for a superconducting nanowire single-photon detector (SNSPD) device 150'. The SNSPD device 150' may be similar to the device described above with respect to FIG. 9, except as described below.

[0048] 10, the waveguide 66' is formed of aluminum nitride (AlN), so no separate seed layer is required, and the waveguide 66' itself acts as a seed layer for the NbN.

[0049] The dielectric layer 64 can be silicon oxide (SiO2), but other materials having a lower index of refraction than the aluminum nitride of the waveguide 66' are also possible, such as silicon nitride (Si3N4). As mentioned above, the particular thickness and width of the waveguide can be selected based on the wavelength of light to be captured and detected. The waveguide 66' can have a thickness of 400-500 nm, e.g., 450 nm, for 1550 nm light. The width of the waveguide 66', i.e., the width perpendicular to the propagation direction of the light entering the waveguide 66', can be 1.1-1.3 μm, e.g., 1.2 μm for 1550 nm light.

[0050] The superconducting wire 52 is formed on, for example in direct contact with, the waveguide 66'.

[0051] While particular implementations have been described, other and further implementations may be devised without departing from the basic scope of the disclosure. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. It should be noted, however, that the drawings depict only exemplary embodiments. The scope of the invention is determined by the claims.

Claims

1. 1. A superconducting nanowire single photon detector (SNSPD) device comprising: A substrate; a distributed Bragg reflector on the substrate, the distributed Bragg reflector including a plurality of bilayers, each bilayer including an underlayer of a first material, the first material being a first metal nitride, and an overlayer of a second material having a higher refractive index than the first material; a seed layer of a first material, the first metal nitride, overlying and in direct contact with the upper layer of the distributed Bragg reflector, the seed layer being thinner than the lower layer of each bilayer; a superconducting wire in direct contact with the seed layer, the superconducting wire being a second metal nitride different from the first metal nitride of the seed material; Including, the device.

2. 2. The device of claim 1, wherein the bottom layer of the first material of a bottom bilayer of the plurality of bilayers is a bottom layer of the distributed Bragg reflector.

3. The device of claim 2 , wherein the bottom layer of the first material of the bottom bilayer is in direct contact with the substrate.

4. The device of claim 2 , wherein the substrate is a silicon wafer.

5. The device of claim 1 , wherein the first material is aluminum nitride.

6. The second material is a-Si, TiO ２ and Nb ２ O ５ The device of claim 5 , selected from the group consisting of:

7. The device of claim 5 , wherein the second metal nitride is niobium nitride, titanium nitride, or niobium titanium nitride.

8. The device of claim 7 , wherein the second metal nitride comprises δ-phase NbN.

9. The device of claim 5, wherein the seed layer has a thickness of about 4 to 50 nm.

10. The device of claim 9, wherein the distributed Bragg reflector is configured to have a maximum reflectivity for light between about 1500 and 1600 nm.

11. The device of claim 1 , wherein the superconducting wire has a thickness of 4 to 50 nm.

12. The device of claim 1 further comprising a capping layer on the superconducting wire.

13. The device of claim 12 , wherein the capping layer is amorphous silicon.

14. 13. The device of claim 12, wherein the superconducting wire comprises multiple wire portions, and a trench separating the multiple wire portions extends through the capping layer.

15. The device of claim 14 , wherein the trenches separating the wire portions do not extend into the distributed Bragg reflector.

16. The device of claim 15 , wherein the trench does not extend into the seed layer.

17. The device of claim 15 , wherein the trench extends into the seed layer.

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