Display device and method for manufacturing the same

Abstract

To provide a display device that can prevent damage to pads of a pixel driver chip when forming wires while simplifying a manufacturing process.SOLUTION: There is provided a display device comprising: an adhesive layer disposed on a substrate; a pixel driver chip disposed on the adhesive layer and including a plurality of pads disposed on an upper surface thereof; a planarization layer surrounding side surfaces of the pixel driver chip; a plurality of pad contact layers disposed on the plurality of pads of the pixel driver chip; and a plurality of first wires disposed on the planarization layer. Therein, the plurality of pad contact layers and the plurality of first wires may have the same thickness and may be composed of the same conductive material layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present specification relates to a display device and a manufacturing method thereof, and more particularly to a display device and a manufacturing method thereof that do not damage pads of a pixel driving chip and can simplify the manufacturing process. [Background technology]

[0002] Specific examples of flat panel display devices that are currently widely used include liquid crystal display devices, organic light emitting display devices, inorganic light emitting display devices, quantum dot display devices, etc.

[0003] These flat panel displays include a thin film transistor (TFT) array substrate for driving pixels. The TFT array substrate may include an array of TFTs and other elements (e.g., a planarization layer) arranged for driving pixels. Recently, displays have been developed in which the thin film transistor array is replaced with a pixel driver chip to realize a higher resolution display. These pixel driver chips, also called microdriver chips, can drive light emitting diodes (LEDs). Summary of the Invention [Problem to be solved by the invention]

[0004] The inventors of the present application have devised a display device and method of manufacture thereof that improves upon existing pixel driver chip technology.

[0005] A plurality of pixel driving chips are manufactured in a separate manufacturing process, and then attached onto a substrate of a display device by a transfer process.

[0006] The pixel driving chip has various input / output pads, and in order to protect these, a passivation film is provided that covers the multiple input / output pads.

[0007] After the pixel driving chip is transferred onto the substrate of the display device, a planarization layer is formed surrounding multiple sides of the pixel driving chip, and multiple wirings, either single-layer or multi-layer, are formed on the planarization layer.

[0008] The process of forming a plurality of wirings on the planarization layer includes the steps of depositing a conductive material layer on the planarization layer, patterning the conductive material layer using a photolithography process and a dry etching process, and removing a passivation film of the pixel driving chip using a photolithography process and a wet etching process to expose a plurality of input / output pads.

[0009] If there is no etching selectivity between the conductive material layer and the passivation film during the dry etching process, not only the passivation film in a particular region of the substrate where the etching rate of the dry etching process is higher, for example, in the central region of the substrate, but also the input / output pads of the pixel driving chip may be etched.

[0010] For this reason, the inventors of the present specification have devised a display device and a manufacturing method thereof in which multiple input / output pads of a pixel driving chip are not damaged even when there is no etching selectivity between a conductive material layer and a passivation film during a dry etching process to form wiring.

[0011] An object of the present invention is to provide a display device that can prevent damage to pads of a pixel driving chip during wiring formation and can simplify the manufacturing process.

[0012] The problems to be solved by the embodiments of the present specification are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by a person skilled in the art from the following description. [Means for solving the problem]

[0013] A display device according to an embodiment of the present specification includes a substrate, an adhesive layer disposed on the substrate, a pixel driving chip disposed on the adhesive layer and including a plurality of pads on an upper surface thereof, a planarization layer surrounding a plurality of sides of the pixel driving chip, a plurality of pad contact layers disposed on the plurality of pads of the pixel driving chip, and a plurality of first wirings disposed on the planarization layer, where the plurality of pad contact layers and the plurality of first wirings may have the same thickness and be made of the same conductive material layer.

[0014] A manufacturing method of a display device according to an embodiment of the present specification includes the steps of forming an adhesive layer on a substrate, mounting a pixel driving chip including a plurality of pads on the adhesive layer, forming a planarization layer surrounding a plurality of sides of the pixel driving chip, depositing a conductive material layer on the planarization layer and the pixel driving chip, and patterning the conductive material layer to simultaneously form a plurality of pad contact layers arranged on the plurality of pads of the pixel driving chip and a plurality of first wirings arranged on the planarization layer.

[0015] Other specific details of the embodiments are included in the detailed description and drawings. Effect of the Invention

[0016] According to the embodiments of the present specification, damage to multiple input / output pads of a pixel driving chip can be avoided during a dry etching process for forming wiring on a planarization layer in a display device.

[0017] According to the embodiment of the present specification, since the photolithography process for removing the passivation film of the pixel driving chip is eliminated, the manufacturing process of the display device can be simplified and the manufacturing cost can be reduced.

[0018] The effects of the present specification are not limited to those mentioned above, and other effects not mentioned herein will be clearly understood by those skilled in the art from the following description. [Brief description of the drawings]

[0019] [Figure 1] 1 is a cross-sectional view illustrating a display device according to an embodiment of the present specification. [Diagram 2] FIG. 2 is a cross-sectional view showing a display device according to another embodiment of the present specification. [Diagram 3] 1A to 1C are plan views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 4] 1A to 1C are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Diagram 5] 1A to 1C are plan views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 6] 1A to 1C are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 7] 1A to 1C are plan views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 8] 1A to 1C are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 9] 1A to 1C are plan views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 10] 1A to 1C are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 11] 1A to 1C are plan views illustrating a method for manufacturing a display device according to an embodiment of the present invention. [Figure 12] 1A to 1C are cross-sectional views illustrating a method for manufacturing a display device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] The advantages and features of the present invention, as well as the methods for achieving them, will become clear from the detailed embodiments described below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various different forms. However, the present embodiments are provided to fully disclose the present invention and fully inform those skilled in the art of the present invention of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0021] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings to explain the embodiments of the present invention are illustrative, and the present invention is not limited to the illustrated matters. The same reference symbols throughout the specification refer to the same components. In addition, when describing the present invention, if a specific description of related known technology is judged to make the gist of the present invention unclear, the detailed description will be omitted. When "includes," "has," "is," etc. are used as mentioned in this specification, other parts can be added unless "only" is used. When a component is indicated in the singular, it includes the plural unless otherwise explicitly stated.

[0022] When interpreting elements, they are to be interpreted as including a range of error unless otherwise expressly stated.

[0023] When describing the positional relationship of two parts, for example, using "on", "at the top", "below", "to the side", etc., one or more other parts may be located between the two parts, unless "immediately" or "directly" is used.

[0024] Although the terms "first", "second", etc. are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Thus, the first component referred to below may be the second component within the technical concept of this specification.

[0025] Like reference numbers throughout the specification refer to like elements.

[0026] The size and thickness of each component shown in the drawings are shown for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the components shown.

[0027] The features of the various embodiments of the present invention may be combined or combined with each other, either partially or in whole, and may be technically linked and operated in various ways, as will be readily understood by those of ordinary skill in the art, and each embodiment may be implemented independently of each other, or may be implemented together in a linked relationship.

[0028] Hereinafter, a number of display devices according to embodiments of the present specification will be described in detail with reference to the accompanying drawings.

[0029] FIG. 1 is a cross-sectional view showing a display device 100 according to an embodiment of the present disclosure.

[0030] 1, a display device 100 according to an embodiment of the present specification may include a plurality of buffer layers 121, 123 disposed on a substrate 110, a plurality of alignment marks 125, an adhesive layer 128 disposed on the buffer layers 121, 123, a pixel driving chip 130, a planarization layer 140, a plurality of wirings 151a, 153, a plurality of insulating layers 152, 154 disposed on the planarization layer, and a plurality of light emitting elements ED1, ED2, ED3 disposed on the insulating layers 152, 154. The plurality of wirings 151a, 153 may be conductive patterns, conductive lines, or other elements that provide electrical conduction / connection.

[0031] The substrate 110 may be made of a plastic or flexible material having flexibility. For example, the substrate 110 may be made of a single layer or multiple layers of a material such as, but not limited to, polyimide, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyethersulfone, polyarylate, polysulfone, or cyclic-olefin copolymer. The substrate 110 may be made of glass.

[0032] Of the multiple buffer layers 121 and 123, a first buffer layer 121 may be disposed on the substrate 110. For example, the first buffer layer 121 may be made of an insulating material such as, but not limited to, silicon nitride, silicon oxide, or silicon oxynitride.

[0033] A plurality of alignment marks 125 may be disposed on the first buffer layer 121. The plurality of alignment marks 125 may guide a mounting position when transferring the pixel driving chip 130. For example, the plurality of alignment marks 125 may be made of, but is not limited to, a metal material, and may be made of a non-conductive material.

[0034] A second buffer layer 123 may be disposed on the first buffer layer 121 and the plurality of alignment marks 125. For example, the second buffer layer 123 may be made of an insulating material such as, but not limited to, silicon nitride, silicon oxide, or silicon oxynitride. The second buffer layer 123 may have a thickness greater than that of the first buffer layer 121. The first and second buffer layers 121 and 123 may be made of the same material or different materials.

[0035] An adhesive layer 128 may be disposed on the second buffer layer 123. For example, the adhesive layer 128 may be made of an acrylic resin, a silicone resin, or the like, but is not limited thereto.

[0036] A pixel driving chip 130 may be disposed on the adhesive layer 128. The pixel driving chip 130 may be located in the display area of ​​the display device 100. Although FIG. 1 shows one pixel driving chip 130 on the adhesive layer 128 as an example, the display device 100 may include multiple pixel driving chips 130 disposed on the adhesive layer 128. The multiple pixel driving chips 130 may be arranged in a matrix of multiple rows and multiple columns in the display area of ​​the display device 100. For example, the multiple pixel driving chips 130 may be arranged in a matrix configuration or other suitable configuration. The pixel driving chip 130 may drive and switch multiple light-emitting elements ED1, ED2, ED3 arranged in at least one pixel (PX) in the display area. As an example, the display area of ​​the display device 100 may include multiple pixels (PX), and the pixel driving chip 130 may be provided for each pixel (PX) or for each group of pixels (PX), and may drive one or more light-emitting elements in the pixel (PX). For example, the pixel driving chip 130 can drive and switch a plurality of light-emitting elements ED1, ED2, ED3 arranged in one or more of a plurality of pixels (PX) in the display area. The plurality of pixels (PX) can be arranged in the display area in a matrix shape consisting of a plurality of rows and a plurality of columns. For example, the pixel driving chip 130 can drive and switch a plurality of light-emitting elements arranged in 16×16, i.e., 256, pixels. The pixel driving chip 130 can also be referred to as a microdriver chip. For example, the pixel driving chip 130 can have a size of 1 to 500 μm or 1 to 300 μm in the horizontal direction (for example, in the X-axis direction or the Y-axis direction).

[0037] The pixel driving chip 130 may include an element layer 131, a plurality of pads 133, and a passivation film 135. The element layer 131 may include a circuit for driving and switching one or more light emitting elements. The element layer 131 may include a digital circuit, an analog circuit, etc. The element layer 131 may include a plurality of driving transistors, a plurality of switching transistors, and a plurality of storage capacitors. The element layer 131 may include a plurality of circuit units. Each circuit unit may include at least one driving transistor, at least one switching transistor, and at least one storage capacitor. The element layer 131 may be manufactured, for example, using a plurality of MOSFET manufacturing processes on a single crystal semiconductor substrate.

[0038] The pads 133 may include various input pads and output pads, including, but not limited to, a pad connected to a light emitting element, a pad connected to a high potential voltage line, a pad connected to a low potential voltage line, a pad connected to a data signal line, a pad connected to a scan signal line, a pad connected to a reference voltage line, and the like.

[0039] The pads 133 may be made of a single or multi-layer structure of conductive material layers. The pads 133 may be made of a single or multi-layer structure including Ti, Ta, Al, Cu, TiN, TaN, etc., or combinations thereof. The pads 133 may be made of a Ti / TiN / Ti structure, for example.

[0040] The passivation film 135 may cover the side surfaces of the element layer 131. The passivation film 135 may cover an edge region of the top surface of the element layer 131 where the pads 133 are arranged. However, the passivation film 135 may expose the other top surface (inner top surface) of the element layer 131. In one embodiment, the passivation film 135 may cover only the side surfaces of the element layer 131 without covering the top surface of the element layer 131. In one embodiment, the passivation film 135 may cover only the edge region of the top surface of the element layer 131 and may not cover the other top surface and the side surfaces of the element layer 131. In one embodiment, the passivation film 135 may not cover the top surface of the element layer 131 and the side surfaces of the element layer 131. The passivation film 135 may be made of aluminum oxide (AlOx), but is not limited thereto.

[0041] The pixel driving chip 130 may be manufactured by a separate manufacturing process, and may be disposed on the adhesive layer 128 by a transfer process. Before the pixel driving chip 130 is disposed or moved onto the adhesive layer 128 of the display device 100, the passivation film 135 may cover not only the side surfaces of the element layer 131 but also the entire upper surface of the element layer 131 to protect the pads 133 (see FIGS. 3 and 4). In one example, before the pixel driving chip 130 is disposed or moved onto the adhesive layer 128 of the display device 100, the passivation film 135 may cover the pads 133 and the upper surface of the element layer 131 and not cover the side surfaces of the element layer 131 to protect the pads 133.

[0042] The planarization layer 140 surrounding the pixel driving chip 130 on multiple sides may be disposed on the adhesive layer 128, and may expose the top surface of the element layer 131 (either the entire surface or the entire surface except the edge area). The planarization layer 140 may not cover the pads 133. The planarization layer 140 may be disposed on the protective film 135 so as to cover only the edge area of ​​the top surface of the element layer 131 covered by the protective film 135. In one embodiment, the planarization layer 140 may not cover the top surface of the element layer 131 and the pads 133. The planarization layer 140 may be made of an organic material. The planarization layer 140 may be made of, for example, but is not limited to, photosensitive photo acrylic or photosensitive polyimide.

[0043] A plurality of first wirings (or first conductive patterns) 151a may be disposed on the planarization layer 140. A plurality of pad contact layers 151b may be disposed on the plurality of pads 133 of the pixel driving chip 130. The plurality of pad contact layers 151b disposed directly on the plurality of pads 133 may not cover the sides of the plurality of pads 133. The plurality of pad contact layers 151b disposed directly on the plurality of pads 133 may have the same size as the plurality of pads 133 or may actually have the same size. The plurality of first wirings 151a and the plurality of pad contact layers 151b may have the same thickness and may be made of the same conductive material layer. The plurality of first wirings 151a and the plurality of pad contact layers 151b may each be made of a single layer or a multi-layer structure of Ti, Ta, Al, Cu, TiN, TaN, etc., or a combination thereof. The plurality of first wirings 151a and the plurality of pad contact layers 151b may be made of, for example, a Ti / Al / Ti structure. The pad contact layers 151b may be formed to a thickness of 500 nm to 900 nm.

[0044] A first insulating layer 152 covering the first wirings 151a and the pad contact layers 151b may be disposed on the planarization layer 140 and the pixel driving chip 130. The first insulating layer 152 may be made of, for example, but is not limited to, photosensitive photo acryl or photosensitive polyimide.

[0045] A plurality of second wirings (or a plurality of second conductive patterns) 153 may be disposed on the first insulating layer 152. The plurality of second wirings 153 may penetrate the first insulating layer 152 and be connected to the plurality of first wirings 151a and the plurality of pad contact layers 151b. The plurality of second wirings 153 may be in direct contact with the plurality of first wirings 151a and the plurality of pad contact layers 151b. Some of the plurality of second wirings 153 may be connected to the plurality of pads 133 of the pixel driving chip 130 through the plurality of pad contact layers 151b. The plurality of second wirings 153 may be made of a single layer or a multi-layer structure of Ti, Ta, Al, Cu, TiN, TaN, etc., or a combination thereof. The plurality of second wirings 153 may be made of, for example, a Ti / Al / Ti structure. The plurality of second wirings 153 may be formed to a thickness of 500 nm to 900 nm. As a result, the sum of the thicknesses of the pad contact layer 151b and the second wiring 153 arranged on each pad 133 can be formed to a thickness of 1,000 nm to 1,800 nm. Similarly, the sum of the thicknesses of the first wiring 151a and the second wiring 153 arranged on the planarization layer 140 may be 1,000 nm to 1,800 nm.

[0046] A second insulating layer 154 may be disposed on the first insulating layer 130 to cover the second wirings 153. The second insulating layer 154 may be made of, for example, photosensitive photo acryl or photosensitive polyimide, but is not limited thereto.

[0047] A plurality of light emitting elements ED1, ED2, ED3 may be disposed on the second insulating layer 154. In one embodiment, at least one wiring and at least one insulating layer may be further disposed between the second insulating layer 154 and the plurality of light emitting elements ED1, ED2, ED3. The plurality of light emitting elements (ED1, ED2, ED3) may be driven (e.g., turned on / off) by the pixel driving chip 130 (e.g., by being electrically coupled to the element layer 131 via the pad 133, the pad contact layer 151b, and the second wiring 153).

[0048] A display area of ​​the display device 100 may include a plurality of pixels (PX) arranged in a matrix of a plurality of rows and a plurality of columns. Each pixel (PX) may include a plurality of light-emitting elements ED1, ED2, ED3 that emit light of different colors. However, a different number of light-emitting elements may be arranged for each pixel (PX). The plurality of light-emitting elements ED1, ED2, ED3 may be coupled to a pixel driving chip 130. Each of the light-emitting elements ED1, ED2, ED3 may be coupled to one of a plurality of pads 133 of the pixel driving chip 130. For example, if a pixel has three light-emitting elements, three pads 133 may be provided to respectively correspond to the three light-emitting elements. However, other variations are also possible.

[0049] The plurality of light-emitting elements ED1, ED2, ED3 may include, for example, but are not limited to, three light-emitting elements emitting red light, green light, and blue light, respectively. In one embodiment, the plurality of light-emitting elements may include four light-emitting elements emitting red light, green light, blue light, and white light, respectively. In one embodiment, the plurality of light-emitting elements may include four light-emitting elements emitting red light, green light, blue light, and yellow light, respectively. In one embodiment, the plurality of light-emitting elements may include four light-emitting elements emitting red light, green light, blue light, and yellow light, respectively.

[0050] The light emitting elements ED1, ED2, ED3 may be inorganic light emitting diodes or organic light emitting diodes.

[0051] As the light emitting elements ED1, ED2, and ED3, the inorganic light emitting diodes may have a size of 1 to 100 μm, 1 to 50 μm, or 1 to 20 μm in the horizontal direction (in the X-axis direction or the Y-axis direction). The inorganic light emitting diodes may be referred to as micro light emitting diodes. The inorganic light emitting diodes may include a p-doped semiconductor layer, an n-doped semiconductor layer, and an active layer (including, for example, one or more quantum well layers) therebetween. The inorganic light emitting diodes may include a first electrode connected to the p-doped semiconductor layer and a second electrode connected to the n-doped semiconductor layer. The inorganic light emitting diodes may be manufactured using a plurality of compound semiconductors of II-VI group or III-V group. The inorganic light emitting diodes may be manufactured by a separate manufacturing process and may be disposed on the adhesive layer 128 by a transfer process.

[0052] In the modified example, the light emitting elements ED1, ED2, and ED3 may include an organic light emitting diode including a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer, and may include a first electrode connected to the hole injection layer and a second electrode connected to the electron injection layer.

[0053] The organic light emitting diode can be directly formed on the second insulating layer 154 by a deposition process, a photolithography process, an etching process, and the like.

[0054] The display device 100 may further include other components for displaying images. For example, additional layer(s) may be disposed on the second insulating layer 154 and / or the light emitting elements.

[0055] 2 is a cross-sectional view showing a display device 100-1 according to another embodiment of the present disclosure. The display device 100-1 shown in FIG. 2 is similar to the display device 100 shown in FIG. 1, and differs in that it includes a plurality of pad contact layers 151b' disposed on a plurality of pads 133 of the pixel driving chip 130. Since the configuration of the display device 100-1 in FIG. 2 may be the same or similar to the configuration of the display device 100 in FIG. 1, except for the configuration of the pad contact layer 151b', the display device 100-1 will be described mainly with reference to the pad contact layer 151b'.

[0056] Referring to FIG. 2, a plurality of first wirings 151a may be disposed on the planarization layer 140. A plurality of pad contact layers 151b' may be disposed on a plurality of pads 133 of the pixel driving chip 130. The plurality of pad contact layers 151b' disposed directly on the plurality of pads 133 may cover the upper surface and a plurality of side surfaces of the plurality of pads 133. For example, the plurality of pad contact layers 151b' cover the upper surface and the side surfaces of the plurality of pads 133 and directly contact the upper surface of the element layer 131. The plurality of pad contact layers 151b' disposed directly on the plurality of pads 133 may have a size larger than the size of the plurality of pads 133. A plurality of second wirings 153 may be disposed on the pad contact layer 151b'. For example, the upper width of the pad contact layer 151b' may be larger than the lower width of the second wirings and / or the upper width of the pads 133. The first wirings 151a and the pad contact layers 151b' may be made of Ti, Ta, Al, Cu, TiN, TaN, etc., or a single layer or multi-layer structure of a combination thereof. The first wirings 151a and the pad contact layers 151b' may be made of, for example, a Ti / Al / Ti structure.

[0057] Figures 3 to 12 are a number of plan views and cross-sectional views showing a method for manufacturing a display device according to an embodiment of the present invention. Figures 3, 5, 7, 9, and 11 are plan views showing a method for manufacturing a display device according to an embodiment of the present invention, and Figures 4, 6, 8, 10, and 12 are cross-sectional views showing the method for manufacturing a display device according to an embodiment of the present invention.

[0058] In particular, Figure 4 is a cross-sectional view taken along line 4-4 of Figure 3, Figure 6 is a cross-sectional view taken along line 6-6 of Figure 5, Figure 8 is a cross-sectional view taken along line 8-8 of Figure 7, Figure 10 is a cross-sectional view taken along line 10-10 of Figure 9, and Figure 12 is a cross-sectional view taken along line 12-12 of Figure 11. Although Figures 9-12 relate to the display of Figure 1, the steps can be modified to form the display of Figure 2.

[0059] 3 and 4, a sacrificial layer 105 may be disposed on a carrier substrate 101, and a substrate 110 may be disposed on the sacrificial layer 105. A first buffer layer 121, a plurality of alignment marks 125, and a second buffer layer 123 may be formed on the substrate 110. For example, the first buffer layer 121 and the second buffer layer 123 may be made of an insulating material such as, but not limited to, silicon nitride, silicon oxide, silicon oxynitride, etc. For example, the plurality of alignment marks 125 may be made of, but is not limited to, a metal material.

[0060] Then, an adhesive layer 128 may be formed on the second buffer layer 123. For example, the adhesive layer 128 may be made of an acrylic resin, a silicone resin, or the like, but is not limited thereto.

[0061] The pixel driving chip 130, which is manufactured by a separate manufacturing process, may be placed on the adhesive layer 128 by a transfer process. The pixel driving chip 130 may be placed at a pre-designed position by a plurality of alignment marks 125. The pixel driving chip 130 may include an element layer 131, a plurality of pads 133, and a passivation film 135. The passivation film 135 may cover a plurality of side surfaces and an upper surface of the element layer 131 and the plurality of pads 133. The plurality of pads 133 may be, for example, made of a Ti / TiN / Ti structure. The passivation film 135 may be made of aluminum oxide (AlOx), but is not limited thereto.

[0062] The planarization layer 140 may be formed to surround multiple sides of the pixel driving chip 130 and may be disposed on the adhesive layer 128. The planarization layer 140 may cover an edge region of the top surface of the pixel driving chip 130. The planarization layer 140 may be made of an organic material. The planarization layer 140 may be made of, for example, but is not limited to, photosensitive photo acryl or photosensitive polyimide.

[0063] 5 and 6, a portion of the passivation film 135 may be removed to expose the pads 133. The passivation film 135 may be removed by a wet etching process using a phosphoric acid solution. For example, the pads 133 and a portion of the top surface of the device layer may be exposed. The pads 133 may be arranged in a matrix configuration, but may also be arranged in other configurations. The pads 133 may have other shapes.

[0064] 7 and 8, a conductive material layer 151d covering the planarization layer 140 and the pixel driving chip 130 may be deposited, and a plurality of photoresist patterns 151p may be formed on the conductive material layer 151d on the planarization layer 140 and the plurality of pads 133. The size of the plurality of photoresist patterns 151p formed on the plurality of pads 133 may be the same as the size of the plurality of pads 133. In one embodiment, the size of the plurality of photoresist patterns 151p formed on the plurality of pads 133 may be larger than the size of the plurality of pads 133. The conductive material layer 151d may be formed of a single layer or a multi-layer structure of Ti, Ta, Al, Cu, TiN, TaN, etc., and combinations thereof. The conductive material layer 151d may be formed of, for example, a Ti / Al / Ti structure. The photoresist patterns 151p may include a first photoresist pattern 151b for forming the first wiring 151a formed in FIG. 10 and a second photoresist pattern 151p for forming the pad contact layer 151b (or 151b'). The first photoresist pattern and the second photoresist pattern may be the same or different from each other. For example, the width of the bottom of the first photoresist pattern 151p may be larger than the width of the bottom of the second photoresist pattern 151p.

[0065] 9 and 10, the conductive material layer 151d may be etched by a dry etching process using the first photoresist pattern 151p to form a plurality of first wirings 151a on the planarization layer 140, and a plurality of pad contact layers 151b may be formed on the plurality of pads 133. For example, the conductive material layer 151d may be dry etched to simultaneously form the first wirings 151a and the pad contact layer 151b (or 151b').

[0066] 7 and 8, a plurality of photoresist patterns 151p and a conductive material layer 151d having a size equal to or larger than the plurality of pads 133 are formed in advance on the plurality of pads 133 (e.g., to completely cover the plurality of pads 133), so that the plurality of pads 133 may not be directly exposed to the dry etching process for forming the plurality of first wirings 151a. Therefore, damage to the plurality of pads 133 due to the dry etching process for forming the plurality of first wirings 151a can be prevented.

[0067] The dry etching process can be performed using a plasma of an etching gas including BCl3 gas and Cl2 gas.

[0068] 11 and 12, a first insulating layer 152 may be formed to cover the planarization layer 140, the pixel driving chip 130, and the first wirings 151a. For example, the first insulating layer 152 may be formed on the planarization layer 140 and between the first wirings 151a and the pad contact layers 151b. The first insulating layer 152 may be made of, for example, but is not limited to, photosensitive photo acryl or photosensitive polyimide.

[0069] A plurality of second wirings 153 may be formed on the first insulating layer 152, penetrating the first insulating layer 152 and connected to the plurality of first wirings 151a. For example, the plurality of second wirings 153 may be in direct contact with the plurality of first wirings 151a and the plurality of pad contact layers 151b (or 151b'). The plurality of second wirings 153 may be formed by a deposition process of a conductive material layer, a photolithography process, and an etching process. The plurality of second wirings 153 may be made of a single layer or a multi-layer structure of Ti, Ta, Al, Cu, TiN, TaN, etc., or a combination thereof. The plurality of second wirings 153 may be made of a Ti / Al / Ti structure, for example. The second wirings 153 may have any suitable shape or configuration to provide electrical connection as needed.

[0070] Referring to FIG. 1, a second insulating layer 154 may be formed to cover the plurality of second wirings 153, and the light emitting elements ED1, ED2, and ED3 may be disposed or formed on the second insulating layer 154.

[0071] The carrier substrate 101 and the sacrificial layer 105 can then be removed. For example, the carrier substrate 101 and the sacrificial layer 105 can be removed before or after the light emitting elements are formed.

[0072] According to the embodiment of the present invention, at least the following advantages can be obtained.

[0073] In one aspect, damage to input / output pads of a pixel driving chip can be prevented during a dry etching process for forming wiring on a planarization layer of a display device.

[0074] In another aspect, the photolithography process for removing the protective film of the pixel driving chip can be omitted, simplifying the manufacturing process of the display device and reducing manufacturing costs.

[0075] The display device and the method for manufacturing the display device according to the embodiments of the present specification can be described as follows.

[0076] A display device according to an embodiment of the present specification includes a substrate, an adhesive layer disposed on the substrate, a pixel driving chip disposed on the adhesive layer and including a plurality of pads on an upper surface thereof, a planarization layer surrounding a plurality of sides of the pixel driving chip, a plurality of pad contact layers disposed on the plurality of pads of the pixel driving chip, and a plurality of first wirings disposed on the planarization layer, where the plurality of pad contact layers and the plurality of first wirings may have the same thickness and be made of the same conductive material layer.

[0077] According to some embodiments herein, the plurality of pad contact layers and the first wiring may each be made of a Ti / Al / Ti stacked structure.

[0078] According to some embodiments herein, the pad contact layers may have the same size (eg, the same width) as the pads.

[0079] According to some embodiments herein, the pad contact layers may have a size larger than (eg, the same width as) the pads.

[0080] According to some embodiments of the present specification, the display device may further include an insulating layer covering the plurality of pad contact layers and the plurality of first wirings, and a plurality of second wirings passing through the insulating layer and respectively connected to the plurality of pad contact layers and the plurality of first wirings.

[0081] According to some embodiments of the present specification, the sum of the thicknesses of the pad contact layer and the second wiring disposed on each pad may be 1,000 nm to 1,800 nm.

[0082] According to some embodiments herein, the display device may further include a plurality of light emitting elements coupled to the pixel driving chip.

[0083] According to some embodiments herein, the plurality of light emitting elements may be a plurality of inorganic light emitting diodes.

[0084] According to some embodiments herein, the plurality of light emitting elements may be a plurality of organic light emitting diodes.

[0085] A manufacturing method of a display device according to an embodiment of the present specification includes the steps of forming an adhesive layer on a substrate, mounting a pixel driving chip including a plurality of pads on the adhesive layer, forming a planarization layer surrounding a plurality of sides of the pixel driving chip, depositing a conductive material layer on the planarization layer and the pixel driving chip, and patterning the conductive material layer to simultaneously form a plurality of pad contact layers arranged on the plurality of pads of the pixel driving chip and a plurality of first wirings arranged on the planarization layer.

[0086] According to some embodiments herein, the conductive material layer may be comprised of a Ti / Al / Ti stack structure.

[0087] According to some embodiments of the present specification, the plurality of pad contact layers and the plurality of first wirings can each be formed to a thickness of 500 nm to 900 nm.

[0088] According to some embodiments herein, the multiple pad contact layers may be formed to have the same dimensions as the multiple pads.

[0089] According to some embodiments herein, the pad contact layers may be formed to have a size larger than the pads.

[0090] According to some embodiments of the present specification, the method for manufacturing a display device may further include a step of forming an insulating layer covering the plurality of pad contact layers and the plurality of first wirings, and a step of forming a plurality of second wirings penetrating the insulating layer and respectively connected to the plurality of pad contact layers and the plurality of first wirings.

[0091] According to some embodiments of the present specification, the sum of the thicknesses of the pad contact layer and the second wiring arranged on each pad can be formed to be 1,000 nm to 1,800 nm.

[0092] According to some embodiments herein, the method for manufacturing a display device may further include forming a plurality of light emitting elements coupled to the pixel driving chip.

[0093] According to some embodiments herein, the plurality of light emitting elements may be a plurality of inorganic light emitting diodes.

[0094] According to some embodiments herein, the plurality of light emitting elements may be a plurality of organic light emitting diodes.

[0095] According to some embodiments herein, a display device includes at least one pixel including a plurality of light-emitting elements disposed on a substrate; a pixel driving chip disposed on the substrate for driving the plurality of light-emitting elements, the pixel driving chip including: an element layer disposed on the substrate and including at least one circuit element used to drive at least one of the plurality of light-emitting elements; and a plurality of pads disposed on the element layer; a plurality of pad contact layers disposed on the plurality of pads and corresponding to the plurality of pads; a plurality of first conductive patterns disposed adjacent to the plurality of pad contact layers and made of the same material as the plurality of pad contact layers; and a plurality of second conductive patterns coupled to the plurality of first conductive patterns and the plurality of pad contact layers to provide electrical connection between the pixel driving chip and the plurality of light-emitting elements.

[0096] Although the embodiments of the present specification have been described in detail above with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments, and various modifications can be made within the scope of the technical idea of ​​the present invention. Therefore, the embodiments disclosed in the present specification are for the purpose of explanation, not for the purpose of limiting the technical idea of ​​the present invention, and the scope of the technical idea of ​​the present specification is not limited by these embodiments. The scope of protection of the present specification should be interpreted according to the following claims, and all technical ideas within the scope equivalent thereto should be interpreted as belonging to the scope of the rights of the present specification. [Explanation of symbols]

[0097] 100 display device 110 Substrate 121 First buffer layer 123 Second buffer layer 130 pixel driving chip 131 Element Layer 133 Pad 135 Passivation Film 140 Planarization layer 151a 1st wiring 151b Pad contact layer 152 First insulating layer 153 2nd wiring 154 Second insulating layer ED1, ED2, ED3 Light emitting element PX pixels

Claims

1. an adhesive layer disposed on the substrate; a pixel driving chip disposed on the adhesive layer and including a plurality of pads on a top surface thereof; a planarization layer surrounding a plurality of sides of the pixel driving chip; a plurality of pad contact layers disposed on a plurality of pads of the pixel driving chip; a plurality of first wirings disposed on the planarization layer; the plurality of pad contact layers and the plurality of first wirings have the same thickness and are made of the same conductive material layer; Display device.

2. Each of the plurality of pad contact layers and at least one of the plurality of first wirings is made of a Ti / Al / Ti stacked structure. The display device according to claim 1 .

3. At least one of the plurality of pad contact layers has the same size as at least one of the plurality of pads. The display device according to claim 1 .

4. At least one of the plurality of pad contact layers has a size larger than at least one of the plurality of pads. The display device according to claim 1 .

5. an insulating layer covering the pad contact layers and a portion of the first wirings; a plurality of second wirings respectively connected to the plurality of pad contact layers and the plurality of first wirings, The display device according to claim 1 .

6. The sum of the thickness of the pad contact layer and the second wiring arranged on each pad is 1,000 nm to 1,800 nm. The display device according to claim 5 .

7. further comprising a plurality of light emitting devices electrically connected to the pixel driving chip; The display device according to claim 1 .

8. The plurality of light emitting elements are a plurality of inorganic light emitting diodes. The display device according to claim 7.

9. The plurality of light emitting elements are a plurality of organic light emitting diodes. The display device according to claim 7.

10. forming an adhesion layer on a substrate; forming a pixel driving chip on the adhesive layer, the pixel driving chip including a plurality of pads; forming a planarization layer surrounding multiple sides of the pixel driving chip; depositing a conductive material layer on the planarization layer and the pixel driving chip; patterning the conductive material layer to simultaneously form a plurality of pad contact layers on the plurality of pads and a plurality of first wirings on the planarization layer; A method for manufacturing a display device.

11. The conductive material layer has a Ti / Al / Ti laminated structure. The method for manufacturing the display device according to claim 10 .

12. At least one of the plurality of pad contact layers is formed to have the same size as at least one of the plurality of pads. The method for manufacturing the display device according to claim 10 .

13. At least one of the plurality of pad contact layers is formed to have a size larger than at least one of the plurality of pads. The method for manufacturing the display device according to claim 10 .

14. forming an insulating layer covering the plurality of pad contact layers and a portion of the plurality of first wirings; forming a plurality of second wirings respectively connected to the plurality of pad contact layers and the plurality of first wirings. The method for manufacturing the display device according to claim 10 .

15. forming a plurality of light emitting devices electrically connected to the pixel driving chip; The method for manufacturing the display device according to claim 10 .

16. The plurality of light emitting elements are a plurality of inorganic light emitting diodes. The method for manufacturing the display device according to claim 15 .

17. The plurality of light emitting elements are a plurality of organic light emitting diodes. The method for manufacturing the display device according to claim 15 .

18. The sum of the thickness of the pad contact layer and the second wiring formed on each pad is formed to be 1,000 nm to 1,800 nm. The method for manufacturing the display device according to claim 14 .

19. At least one pixel including a plurality of light emitting elements disposed on a substrate; a pixel driving chip disposed on the substrate for driving the plurality of light emitting elements, the pixel driving chip including: an element layer disposed on the substrate, the element layer including at least one circuit element used to drive at least one of the plurality of light emitting elements; and a plurality of pads disposed on the element layer; a plurality of pad contact layers disposed on the plurality of pads and corresponding to the plurality of pads; a plurality of first conductive patterns disposed adjacent to the plurality of pad contact layers and made of the same material as the plurality of pad contact layers; a plurality of second conductive patterns coupled to the plurality of first conductive patterns and the plurality of pad contact layers to provide electrical connections between the pixel driving chip and a plurality of light emitting devices; Display device.

20. a width of at least one of the plurality of pad contact layers is the same as a width of at least one of the plurality of pads and / or a width of a bottom of at least one of the plurality of second conductive patterns; 20. The display device according to claim 19.

21. a width of at least one of the plurality of pad contact layers is greater than a width of at least one of the plurality of pads; 20. The display device according to claim 19.

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