DETECTION APPARATUS, DETECTION METHOD, EXPOSURE APPARATUS, EXPOSURE SYSTEM, ARTICLE MANUFACTURING METHOD, AND PROGRAM

The detection device addresses the challenges of defocus characteristics in semiconductor exposure systems by calculating and applying correction values based on substrate height and focus characteristics, resulting in improved accuracy and speed of alignment measurements.

JP7659388B2Active Publication Date: 2025-04-09CANON KK
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Patent Information

Application Number
JP2020203655
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2020-12-08
Publication Date
2025-04-09
Estimated Expiration
2040-12-08

AI Technical Summary

Technical Problem

Existing semiconductor exposure devices face challenges in achieving accurate and efficient alignment measurements due to defocus characteristics, especially when using pre-alignment optical systems with wide fields of observation. Current methods either fail to account for changes in alignment mark position or defocus characteristics at the edge of the observation field, leading to inaccuracies or prolonged alignment times.

Method used

A detection device that includes a detection optical system and a processing unit to detect alignment marks on a substrate. The processing unit calculates correction values based on the height of the substrate and focus characteristics of the detection optical system, allowing for precise correction of detection results across multiple positions within the observation field.

Benefits of technology

This solution enables the detection device to achieve both high accuracy and speed in detection processing, effectively minimizing the impact of defocus characteristics and improving measurement reproducibility across the entire observation field.

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Abstract

To provide a detection device advantageous for simultaneously achieving accuracy and a speed of a detection process.SOLUTION: The detection device for detecting a mark disposed in a substrate comprises: a stage that moves holding the substrate; an optical detection system that irradiates the mark of the substrate held on the stage with light to detect an image of the mark; and a processing unit that detects the mark on the basis of the image of the mark detected by the detection optical system. The processing unit calculates a detection value indicating the position of the mark within the observation visual field of the detection optical system on the basis of the image of the mark detected by the detection optical system, calculates one of a plurality of partial regions where the mark is positioned within the observation visual field. and corrects the detection value on the basis of a correction value corresponding to the calculated partial region among correction values preset for the partial regions.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present invention relates to a detection apparatus, a detection method, an exposure apparatus, an exposure system, thing product manufacturing method, and Programs Regarding. [Background technology]

[0002] In semiconductor exposure apparatuses, alignment of an object is usually performed by observing an alignment mark on the object (e.g., a substrate) using a detection optical system and detecting the position of the alignment mark. The detection optical system can include a pre-alignment optical system with a wide observation field of view and a fine alignment optical system with a narrow observation field of view but high measurement accuracy. By first performing pre-alignment measurement using the pre-alignment optical system to provisionally align the position of the mark and then performing fine alignment measurement using the fine alignment optical system, it is possible to achieve both a wide observation field of view and high accuracy. Recently, with the miniaturization and increased pixel count of image sensors, it has become possible to achieve high accuracy by using the pre-alignment optical system while maintaining a wide observation field of view.

[0003] On the other hand, one of the possible error factors in alignment measurement in the detection optical system is the defocus characteristic. The defocus characteristic is a characteristic that describes the phenomenon in which the position detected in the direction perpendicular to the optical axis (XY direction) (measurement value of the alignment mark) varies depending on the focus position, which is the position in the optical axis direction (Z direction) of the detection optical system. If the alignment mark is measured in a state with the defocus characteristic, the variation in the position of the alignment mark in the Z direction will result in variation in the measurement direction, which can reduce measurement reproducibility.

[0004] In Patent Document 1, the occurrence of defocus characteristics is minimized by adjusting the detection optical axis and the illumination optical axis, etc. In Patent Document 1, the defocus characteristics are adjusted for the reference adjustment mark, and position detection is performed on the premise that the mark to be actually aligned has the same defocus characteristics as the adjustment mark.

[0005] In fine alignment measurement, it is desirable to measure the alignment mark at the best focus position of the detection optical system in order to minimize the influence of the defocus characteristic. However, when fine alignment measurement is performed with a pre-alignment optical system having a wide observation field, it is not possible to adjust the focus over the entire observation field of the optical system. Therefore, even if the focus is correct at the center of the observation field, the focus may not be correct at the edge of the observation field of the optical system. In this case, the fine alignment measurement is performed in a state that is not the best focus, and a problem may occur in which the measurement value is shifted due to the influence of the defocus characteristic. When a substrate is present in a process wafer, the focus difference between the center and the edge of the observation field becomes large due to the step of the substrate, so that the influence of the defocus characteristic is significant. Therefore, in Patent Document 2, a method is adopted in which the mark is measured once, then the mark is sent to the center of the field of the optical system and fine alignment measurement is performed again. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 10-022211 [Patent Document 2] JP 2005-285916 A Summary of the Invention [Problem to be solved by the invention]

[0007] In Patent Document 1, the problem occurs that the alignment cannot be performed with high accuracy because the change in the alignment mark position or the change in the defocus characteristic at the edge of the observation field of view cannot be tracked. Also, the method in Patent Document 2 requires a process to move the mark to the center of the field of view once, which causes a problem that the alignment measurement takes a long time.

[0008] The present invention provides, for example, a detection device that is advantageous in achieving both high accuracy and high speed in detection processing. [Means for solving the problem]

[0009] According to one aspect of the present invention, a detection device for detecting a mark arranged on a substrate includes a detection optical system that irradiates light onto the mark on the substrate and detects an image of the mark, and a processing unit that performs detection processing of the mark based on the image of the mark detected by the detection optical system, and the processing unit detects a position of the mark within an observation field of the detection optical system based on the image of the mark detected by the detection optical system. Identify Based on the height of the substrate and the focus characteristics of the detection optical system, , calculated for each of a plurality of positions within the observation field of view Correction Value Using the correction value corresponding to the specified position of the mark, The position of the mark in a direction along the surface of the substrate Correct the detection result A detection device is provided, comprising: Effect of the Invention

[0010] According to the present invention, for example, it is possible to provide a detection device that is advantageous in achieving both high accuracy and high speed in detection processing. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a diagram showing the configuration of an exposure apparatus. [Diagram 2] FIG. 2 is a diagram showing the configuration of a detection optical system. [Diagram 3] 1A and 1B are diagrams showing examples of pre-alignment marks. [Figure 4] FIG. 13 is a diagram showing an example of fine alignment. [Diagram 5] 13 is a flowchart of a process for measuring step information and defocus characteristics. [Figure 6] FIG. 13 is a diagram showing a state in which a fine alignment mark is placed at the center of the observation field of view. [Figure 7] 6A and 6B are diagrams for explaining a process of measuring the best focus position and the defocus characteristics at a plurality of measurement points. [Figure 8] 5A to 5C are diagrams for explaining a correction table creation process. [Figure 9]13 is a flowchart of a process for correcting fine alignment measurement values. [Figure 10] FIG. 13 is a diagram showing a state in which fine alignment marks are arranged at the edge of the observation field of view. [Figure 11] 6A to 6C are diagrams for explaining a process of identifying a partial area to which a fine alignment mark belongs. [Figure 12] 5A to 5C are diagrams for explaining a method of calculating a correction value for a fine alignment measurement value. [Figure 13] FIG. 1 is a configuration diagram of an exposure system in which step information is shared between devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0013] First Embodiment FIG. 1 is a schematic diagram of an exposure apparatus in an embodiment. In this specification and the drawings, directions are shown in an XYZ coordinate system with a horizontal plane as the XY plane. In general, a substrate 4 to be exposed is placed on a substrate stage 6 so that its surface is parallel to the horizontal plane (XY plane). Therefore, in the following, directions perpendicular to each other in a plane along the surface of the substrate 4 are referred to as the X-axis and Y-axis, and a direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis. In the following, directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are referred to as the X-direction, Y-direction, and Z-direction, respectively, and the rotation direction around the X-axis, the rotation direction around the Y-axis, and the rotation direction around the Z-axis are referred to as the θx direction, the θy direction, and the θz direction, respectively.

[0014] 1.Device configuration 1 is a diagram showing the configuration of an exposure apparatus to which a detection apparatus is applied according to an embodiment. The exposure apparatus 1 has a projection optical system 3 that projects a pattern (e.g., a circuit pattern) formed on an original 2. The exposure apparatus 1 also has a substrate chuck 5 that holds a substrate 4, and a substrate stage 6 that positions the substrate 4 at a predetermined position. The exposure apparatus 1 further has a detection optical system 7 that irradiates light onto an alignment mark on the substrate 4 held by the substrate stage 6 and detects an image of the alignment mark. A base pattern and alignment marks have been formed on the substrate 4 in a previous process.

[0015] The control unit CN performs overall control of each unit of the exposure apparatus. The memory unit SU stores programs and various data for the control unit CN to execute the exposure process. The control unit CN and the memory unit SU can be configured as a computer device including a CPU and a memory. In this embodiment, the control unit CN can function as a processing unit that performs detection processing of the alignment mark based on the image of the alignment mark detected by the detection optical system 7.

[0016] 2 is a diagram showing the configuration of the detection optical system 7. Illumination light from a light source 8 is reflected by a beam splitter 9, passes through a lens 10, and illuminates a pre-alignment mark 11 on a substrate 4. Diffracted light from the pre-alignment mark 11 passes through the lens 10, the beam splitter 9, and a lens 13, and is received by a sensor 14. Here, the pre-alignment mark 11 is magnified to a predetermined magnification by the lenses 10 and 13, and an image is formed on the sensor 14. Conventionally, different magnifications have been set for pre-alignment measurement, which measures a wide range, and fine alignment measurement, which performs high-precision measurement, but in this embodiment, the "predetermined magnification" is a magnification that allows both pre-alignment measurement and fine alignment measurement to be performed simultaneously.

[0017] Fig. 3 is a diagram showing an example of a pre-alignment mark 11, and Fig. 4 is a diagram showing an example of a fine alignment mark 12. Note that the shapes of the pre-alignment mark 11 and the fine alignment mark 12 are not limited to those shown in the drawings. The shapes of each alignment mark can vary depending on the substrate process, etc.

[0018] 2, an AF (autofocus) system (hereinafter referred to as the "OA-AF system") is configured in the detection optical system 7. The OA-AF system makes it possible to calculate the best focus position for the pre-alignment mark 11 or the fine alignment mark 12.

[0019] 2. Measurement of step information and defocus characteristics within the observation field 5 is a flowchart of an exposure process including a process for measuring step information and defocus characteristics within an observation field where fine alignment marks can be detected. The exposure process according to this flowchart can be performed, for example, when exposing the first substrate in each process.

[0020] In S501, control unit CN controls a substrate transport device (not shown) to load a substrate into exposure apparatus 1. The loaded substrate is held by substrate chuck 5.

[0021] In S502, the control unit CN (processing unit) calculates the position of the pre-alignment mark 11 on the substrate as pre-alignment measurement. At this time, the pre-alignment mark 11 is detected in a plurality of shot areas in the substrate, so that the shift and the first-order linear component (magnification and / or rotation) of the entire substrate are calculated.

[0022] Following the pre-alignment measurement in S502, in S503, the control unit CN performs fine alignment measurement. Here, the control unit CN drives the substrate stage 6 to a position where the fine alignment mark 12 can be observed by the detection optical system 7 based on the result of the pre-alignment measurement, and detects the position of the fine alignment mark 12 in multiple shot areas. In the example of FIG. 4, the fine alignment mark 12 includes a line-and-space pattern in which multiple lines are arranged at a predetermined interval in the X direction, and a line-and-space pattern in which multiple tips are arranged at a predetermined interval in the Y direction. When the measurement direction is the X direction, the image of the alignment mark 12 acquired by the detection optical system 7 is integrated in the non-measurement direction (Y direction) to generate a one-dimensional waveform signal, and this signal is processed to obtain the position of the alignment mark 12 in the X direction. When the measurement direction is the Y direction, the image of the alignment mark 12 acquired by the detection optical system 7 is integrated in the non-measurement direction (X direction) to generate a one-dimensional waveform signal, and this signal is processed to obtain the position of the alignment mark 12 in the Y direction.

[0023] Then, the control unit CN precisely calculates the shift and first-order linear components (magnification and / or rotation) of the entire substrate. At this time, the control unit CN may precisely calculate higher-order deformation components of the substrate by measuring the positions of the fine alignment marks 12 in a plurality of shot areas. This allows precise calculation of the positions of the marks in each shot area on the substrate.

[0024] In S504, the control unit CN uses the OA-AF system to measure the best focus position of the fine alignment mark 12 at the center of the observation field of the detection optical system 7 (reference best focus measurement). Fig. 6 shows a state in which the fine alignment mark 12 is positioned at the center 61 of the observation field of view. The best focus position measured at this center 61 of the observation field of view is determined as the reference position of the step. Hereinafter, this will be referred to as the "reference best focus position," and this value is stored in the memory unit SU.

[0025] In S505, the control unit CN measures the best focus position and the defocus characteristic at each of the multiple measurement points in the observation field of view. The defocus characteristic represents a phenomenon in which the position (measurement value of the fine alignment mark 12) detected in the direction perpendicular to the optical axis (XY direction) varies depending on the focus position (depending on the defocus amount), which is the position in the optical axis direction (Z direction) of the detection optical system 7. In S505, the control unit CN drives the substrate stage 6 so that the center of the fine alignment mark 12 coincides with one of the multiple measurement points in the observation field of view (for example, measurement point 71), as shown in FIG. 7. Thereafter, the control unit CN uses the OA-AF system to measure the best focus position of the fine alignment mark 12 and measure the defocus characteristic. Next, the control unit CN moves the substrate stage 6 in the direction of the arrow 72 so that the center of the fine alignment mark 12 coincides with the next measurement point, and measures the best focus position of the fine alignment mark 12 and measures the defocus characteristic. Thereafter, similarly, the best focus position and the defocus characteristics are measured at each of a plurality of measurement points within the observation field of view.

[0026] In S506, the control unit CN calculates a step, which is a difference between the best focus position at each measurement point and the reference best focus position, and creates step information having a step value for each measurement point. Furthermore, the control unit CN obtains a correction value based on the step at each measurement point and the defocus characteristic. For example, as shown in FIG. 8, the control unit CN obtains the product of the step at each measurement point and the defocus characteristic as a correction value. The control unit CN creates a correction table indicating the correspondence between the positions (XY coordinate values) of the multiple measurement points and the correction values ​​from the correction values ​​obtained for each of the multiple measurement points. Since the defocus characteristic is measured for each measurement direction (X direction, Y direction) of the fine alignment mark 12, a correction table for the X direction and a correction table for the Y direction can be created. The created correction table is stored in the storage unit SU. The above steps S502 to S506 are the correction table creation process.

[0027] In S507, the control unit CN exposes each shot area of ​​the substrate. In S508, the control unit CN controls a substrate transport device (not shown) to unload the substrate from the exposure apparatus.

[0028] As described above, the exposure process according to this flowchart is performed, for example, when exposing the first substrate in each process, but the correction table may be recreated if the fine alignment mark 12 is changed or if the position of the measurement point is changed.

[0029] 3. Correction process for fine alignment measurement values 9 is a flowchart of an exposure process accompanied with a correction process of fine alignment measurement values. The exposure process according to this flowchart can be performed during exposure of a substrate other than the exposure process accompanied with the measurement of step information and defocus characteristics described above.

[0030] In S901, control unit CN controls a substrate transport device (not shown) to load a substrate into exposure apparatus 1. The loaded substrate is held by substrate chuck 5.

[0031] In S902, the control unit CN performs position measurement of the fine alignment mark 12 without performing pre-alignment, i.e., without driving the fine alignment mark 12 into the center of the field of view. This position measurement determines a detection value (fine alignment measurement value) indicating the position of the fine alignment mark 12 within the observation field of view of the detection optical system 7. Since pre-alignment is not performed, it is not guaranteed that the fine alignment mark 12 as shown in Fig. 6 will be positioned at the center of the observation field of view of the detection optical system 7. Therefore, a state may occur in which the fine alignment mark 12 is positioned away from the center of the observation field of view, as shown in Fig. 10.

[0032] The observation field of the detection optical system 7 may be divided into a plurality of partial regions each having a center at a plurality of measurement points. In the example of FIG. 11, the observation field of view has 12 partial regions indicated by R1 to R12, and a correction value and an XY coordinate value of a measurement point are indicated in each partial region. In the embodiment, each of the plurality of partial regions may have a size that includes the fine alignment mark 12. However, the size of each of the plurality of partial regions is not limited to a specific size related to the fine alignment mark 12. In other embodiments, each of the plurality of partial regions may be smaller than the fine alignment mark 12. In S903, the control unit CN specifies the partial region in which the fine alignment mark 12 is located among the plurality of partial regions R1 to R12 based on the XY coordinate value of the fine alignment mark 12 measured in S902. In the example of FIG. 11, the partial regions in which the fine alignment mark 12 is located are R1, R2, R7, and R8. The fine alignment mark 12 is surrounded by four points: measurement point (x1, y1) in partial region R1, measurement point (x2, y2) in partial region R2, measurement point (x7, y7) in partial region R7, and measurement point (x8, y8) in partial region R8.

[0033] In S904 and S905, the control unit CN corrects the alignment measurement value based on the correction value for the partial area determined in S903 among the correction values ​​predetermined for each of the partial areas. For example, in S904, the control unit CN calculates a correction value for the fine alignment measurement value, which is the detection result of the mark, using the correction value of the measurement point of the partial area specified in S903.

[0034] As described above, in the embodiment, each of the multiple partial regions has a size that includes the fine alignment mark 12. When the center of the fine alignment mark 12 coincides with the center of one partial region, the correction value of the fine alignment mark 12 can be the correction value that is preset for that partial region. When the center of the fine alignment mark 12 does not coincide with the center of one partial region, the fine alignment mark 12 is located across two or more partial regions. The example shown in FIG. 11 illustrates this situation. In this case, the correction value of the fine alignment measurement value is calculated by the weighted average of the correction values ​​of the measurement points of the partial regions identified in S903.

[0035] A method for calculating the correction value of the fine alignment measurement value will be described with reference to FIG. 12. Here, the center of the fine alignment mark 12 is defined as M1. Also, the correction values ​​1, 2, 7, and 8 of the partial regions R1, R2, R7, and R8 to which the fine alignment mark 12 belongs are defined as C1 (xc1, yc1), C2 (xc2, yc2), C7 (xc7, yc7), and C8 (xc8, yc8), respectively. First, the control unit CN determines the partial region (first partial region) in which the center M1 of the fine alignment mark 12 is located. In the example of FIG. 12, the partial region in which the center M1 of the fine alignment mark 12 is located is the partial region R1. Next, the control unit CN determines a modified correction value obtained by weighting and averaging predetermined correction values ​​for each of the partial regions R1, R2, R7, and R8 with weights according to the amount of positional deviation between the center M1 of the fine alignment mark 12 and the center of the partial region R1. From the amount of positional deviation between the center M1 of the fine alignment mark 12 and the center of the partial region R1, the ratio a of the positions in the X direction and the ratio b of the positions in the Y direction of M1 in a rectangular region whose vertices are the measurement points surrounding the center M1 are calculated. As described above, since a correction table is created for each measurement direction, the corrected correction values ​​are also calculated for each of the X direction and the Y direction. The corrected correction value for the X direction of the fine alignment mark 12 is calculated by the following formula. (1-b)*(xc1*(1-a)+xc2*a)+b*(xc7*a+xc8*(1-a))

[0036] Moreover, the modified correction value in the Y direction for the fine alignment mark 12 is obtained by the following formula. (1-a)*(yc1*(1-b)+yc8*b)+a*(yc7*b+yc2*(1-b))

[0037] Next, in S905, the control unit CN corrects the fine alignment measurement values ​​using the corrected correction values ​​calculated in S904. Note that the corrected correction values ​​calculated in S904 are not limited to the weighted average values. For example, if the measurement accuracy of each correction value is low, a surface approximation in a correction value table may be used. After the correction of the fine alignment measurement values ​​is completed, the control unit CN precisely calculates the shift and first-order linear components (magnification and / or rotation) of the entire substrate from the corrected fine alignment measurement values.

[0038] Thereafter, in S906, the control unit CN exposes each shot area of ​​the substrate. In S907, the control unit controls a substrate transport device (not shown) to unload the substrate from the exposure apparatus.

[0039] According to the above-described exposure process, even if the fine alignment mark 12 is measured at the edge of the observation field of the detection optical system 7 without moving the fine alignment mark 12 to the center of the field of view, high-precision measurement can be performed without being affected by defocus characteristics.

[0040] This embodiment is applicable to both the image detection method and the diffracted light detection method.

[0041] <Second embodiment> In the above-described first embodiment, a correction table is created for each process, and a method for correcting fine alignment measurement values ​​using the correction table during exposure is described. In the second embodiment, sharing of step information between devices when creating a correction table is described.

[0042] FIG. 13 is a configuration diagram of an exposure system in which step information is shared among multiple exposure tools. The exposure system includes multiple exposure tools, each having the above-mentioned detection device. Step information around the fine alignment mark 12 may be stable if it is the same process. In that case, even if best focus measurement is not performed at multiple measurement points in the same way in each of the first exposure tool (tool A) and the second exposure tool (tool B), the step information obtained by measurement in tool A can be used in tool B as well. The step information generated by measurement in tool A is stored in an external storage device. Tool B can access the external storage device to obtain and use the step information for the same process.

[0043] By sharing step information between multiple exposure tools in this way, it becomes possible to omit best focus measurement at multiple measurement points in tool B, which is expected to improve productivity.

[0044] <Embodiment of the article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The article manufacturing method of the present embodiment includes a step of forming a latent image pattern on a photosensitive agent applied to a substrate using the above-mentioned exposure apparatus (a step of exposing the substrate), and a step of developing the substrate on which the latent image pattern has been formed in the step. Furthermore, the manufacturing method includes other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0045] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) for implementing one or more of the functions.

[0046] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0047] 1: exposure device, 2: original, 3: projection optical system, 4: substrate, 5: substrate chuck, 6: substrate stage, 7: detection optical system, C: control unit

Claims

1. A detection device for detecting a mark disposed on a substrate, comprising: a detection optical system that irradiates light onto the mark on the substrate and detects an image of the mark; a processing unit that performs a detection process of the mark based on an image of the mark detected by the detection optical system, The processing unit includes: identifying a position of the mark within an observation field of the detection optical system based on an image of the mark detected by the detection optical system; correcting a detection result of the position of the mark in a direction along the surface of the substrate by using a correction value corresponding to the identified position of the mark among correction values ​​calculated for each of a plurality of positions within the observation field of view based on the height of the substrate and a characteristic related to focus of the detection optical system; A detection device comprising:

2. When the mark is located across two or more partial regions among a plurality of partial regions within the observation field of view, the processing unit: determining a first partial area in which the center of the mark is located; determining a modified correction value by weighting and averaging predetermined correction values ​​for each of the two or more partial regions with weights corresponding to the amount of positional deviation between the center of the mark and the center of the first partial region; correcting the position of the mark using the modified correction value; 2. The detection device according to claim 1 .

3. The processing unit includes: performing a creation process of creating a correction table that represents a relationship between the positions of a plurality of measurement points set in each of a plurality of partial regions within the observation field of view and a correction value; determining a correction value for each of the plurality of partial regions based on the correction table previously created by the creation process; The creation process includes: measuring a best focus position of a fine alignment mark at the center of the observation field of the detection optical system, and determining the measured best focus position as a reference position; measuring a best focus position of the fine alignment mark and a characteristic of the detection optical system at each of the plurality of measurement points; calculating a correction value for each of the plurality of measurement points based on a step between the measured best focus position and the reference position and a characteristic of the detection optical system; creating the correction table from the correction values ​​obtained for each of the plurality of measurement points; 3. The detection device according to claim 1 or 2.

4. a stage for holding and moving the substrate; The creation process includes: The method further includes a process of performing a pre-alignment measurement and a fine alignment measurement subsequent to the pre-alignment measurement, after driving the stage based on the result of the fine alignment measurement, a best focus position of the fine alignment mark is measured at the center of the observation field of the detection optical system; 4. The detection device according to claim 3.

5. 5. The detection apparatus according to claim 3, wherein the characteristic of the detection optical system represents a characteristic in which the measurement value of the fine alignment mark varies depending on a defocus amount of the detection optical system.

6. A detection device for detecting a mark disposed on a substrate, comprising: a stage for holding and moving the substrate; a detection optical system that irradiates light onto the mark on the substrate held by the stage and detects an image of the mark; a processing unit that performs a detection process of the mark based on an image of the mark detected by the detection optical system, The processing unit includes: identifying a position of the mark within an observation field of the detection optical system based on an image of the mark detected by the detection optical system; Identifying a partial area in which the mark is located among a plurality of partial areas within the observation field of view; performing a creation process of creating a correction table that represents a relationship between the positions of a plurality of measurement points set in each of the plurality of partial regions and a correction value; determining a correction value for each of the plurality of partial regions based on the correction table created by the creation process; correcting a detection result of the position of the mark based on a correction value for the specified partial region among the correction values; The creation process includes: measuring a best focus position of a fine alignment mark at the center of the observation field of the detection optical system, and determining the measured best focus position as a reference position; measuring a best focus position of the fine alignment mark and a defocus characteristic of the fine alignment mark at each of the plurality of measurement points; calculating a correction value for each of the plurality of measurement points based on a step between the measured best focus position and the reference position and the defocus characteristic; creating the correction table from the correction values ​​obtained for each of the plurality of measurement points; A detection device comprising:

7. A detection method for detecting a position of a mark on a substrate using a detection optical system that irradiates light onto the mark and detects an image of the mark, comprising the steps of: identifying a position of the mark within an observation field of the detection optical system based on an image of the mark detected by the detection optical system; calculating a correction value for each of a plurality of positions within the observation field of view based on the height of the substrate and a focus characteristic of the detection optical system; and correcting a detection result of the position of the mark in a direction along the surface of the substrate by using a correction value corresponding to the identified position of the mark among the correction values ​​calculated for each of a plurality of positions within the observation field of view. A detection method comprising:

8. A detection method for detecting a position of a mark on a substrate using a detection optical system that irradiates light onto the mark and detects an image of the mark, comprising the steps of: identifying a position of the mark within an observation field of the detection optical system based on an image of the mark detected by the detection optical system; identifying a partial region in which the mark is located among a plurality of partial regions within the observation field of view; creating a correction table that indicates a relationship between positions of a plurality of measurement points set in each of the plurality of partial regions and a correction value; determining a correction value for each of the plurality of partial regions based on the correction table created in the creating step; and correcting a detection result of the position of the mark based on a correction value for the specified partial region among the correction values, The creating step includes: measuring a best focus position of a fine alignment mark at the center of the observation field of the detection optical system, and determining the measured best focus position as a reference position; measuring a best focus position and a defocus characteristic of the fine alignment mark at each of the plurality of measurement points; A correction value is calculated for each of the plurality of measurement points based on a step between the measured best focus position and the reference position and the defocus characteristic. The process to be carried out, creating the correction table from the correction values ​​obtained for each of the plurality of measurement points; A detection method comprising:

9. An exposure apparatus for exposing a substrate, comprising: A detection device according to any one of claims 1 to 6, correcting a detection result of the mark arranged on the substrate by the detection device, and exposing the substrate; An exposure apparatus comprising:

10. 7. An exposure system including a plurality of exposure apparatuses, each having a detection device according to claim 3, wherein information on the step generated in any one of the plurality of exposure apparatuses is shared between the plurality of exposure apparatuses.

11. a first step of exposing a substrate using the exposure apparatus according to claim 9 or the exposure system according to claim 10; a second step of developing the substrate exposed in the first step; and manufacturing an article from the substrate developed in the second step.

12. A program for causing a computer to execute the detection method according to claim 7 or 8.

Citation Information

Patent Citations

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    JP1997180996A

  • Position detector and manufacture of device using it

    JP1998022211A

  • Method and apparatus for position measurement, positioning method, aligner as well as method of manufacturing microdevice

    JP2003156322A

  • EUV exposure method and EUV exposure apparatus

    JP2005032889A

  • Method for measuring position of alignment mark

    JP2005285916A