Light-emitting device

Abstract

To provide an active matrix type display device with a simple circuit structure, in which a threshold can be corrected.SOLUTION: In a circuit illustrated in FIG. 1, pulses are input to a first gate signal line 101 and a second gate signal line 102 in accordance with a timing chart in FIG. 3, so that a transistor in the circuit is turned on or off. As a result, the potential difference between a third node N3 and a second node N2 is determined just by a potential VData of a data line 103 and a potential V2 of a second wire 105 regardless of a threshold of a fourth transistor 112. Thus, an intended current can be supplied to a display element 107.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an active matrix display device. In particular, the present invention relates to a display device having a diode characteristic. The present invention relates to an active matrix display device using a display element having a diode characteristic. The elements are, for example, organic electroluminescent (EL) diodes and light-emitting diodes. These include, but are not limited to, diode characteristics or It exhibits characteristics similar to those of a diode, and as a result, the amount of light emitted, the transmittance, the reflectance, the color tone, and the saturation The term "display element" refers to an element in which the optical characteristics change due to changes such as the above. Hereinafter, the term "display element" will also be used simply. [Background technology]

[0002] A typical example of an electro-optical element having diode characteristics is an organic EL element. The electroluminescent elements are formed in a matrix on a substrate, and each element is controlled by a transistor to display an image. Active matrix organic electroluminescence (EL) display devices that display the above light are known.

[0003] The transistors used in active matrix organic EL displays have a limited temperature range. Because of the need to form large areas in the area, amorphous silicon, polysilicon, and oxide A compound semiconductor or the like is used (see, for example, Patent Documents 1 to 3).

[0004] Transistors using such semiconductor materials generally have a large variation in threshold voltage. In an EL display device, the degree of light emission is controlled by the current value flowing through the organic EL element, and gradation is obtained. In an active matrix organic EL display device, the current flowing through the organic EL element is controlled by a transistor. The current is controlled by a transistor, but the current value also depends on the transistor threshold value. If the threshold voltage of the display varies, the current flowing through the organic EL element also varies, resulting in uneven display. become.

[0005] In order to suppress display defects caused by such threshold voltage variations, There is known a technique for correcting the threshold value using the above method (see Patent Documents 2 and 3). In Patent Document 2 and Patent Document 3, only N-channel transistors and P-channel transistors are Only N-channel transistors or a combination of N-channel and P-channel transistors An example of configuring a threshold correction circuit is shown in FIG. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] U.S. Patent No. 7,674,650 [Patent Document 2] U.S. Patent No. 6,229,506 [Patent Document 3] U.S. Patent No. 7,429,985 Summary of the Invention [Problem to be solved by the invention]

[0007] By the way, depending on the semiconductor materials available, it is possible to obtain a practical P-channel transistor. Conversely, there are some cases where N-channel transistors cannot be obtained. Due to problems with the manufacturing method and structure of the display element, the transistor is connected to the positive electrode of the display element. Conversely, it may be required that the transistor be connected to the negative electrode of the display element. There are times when this happens.

[0008] For example, only N-channel transistors can be used, and the transistors are If connection to the positive electrode is required, the method described in Patent Document 2 can be used. In such a case, for example, a circuit as shown in FIG. 39 of Patent Document 3 may be used. It was necessary to use

[0009] The circuit disclosed in Patent Document 3 is shown in FIG. 2. FIG. 2 shows one dot (a pixel constituting a display device). The circuitry required for a pixel is the smallest unit of a pixel that can be displayed on a display, and one pixel is usually made up of multiple dots of primary colors. A first gate signal line 201, a second gate signal line 202, a third gate signal line 203, A fourth gate signal line 204, a fifth gate signal line 205, a data line 206, a first wiring 207, In addition to the nine wirings, namely the second wiring 208 and the third wiring 209 (which are formed on the element), The light emitting element 210, the capacitor 211, the first transistor 212, the second transistor 213, 13, the third transistor 214, the fourth transistor 215, the fifth transistor 216, A dotted line using seven transistors: a sixth transistor 217, a seventh transistor 218, It is.

[0010] Needless to say, an increase in the number of wirings and elements is undesirable because it reduces the manufacturing yield. An object of one embodiment of the present invention is to propose a more simplified circuit configuration. An object of one embodiment of the present invention is to propose a method for driving the above circuit.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. Problems other than these may be solved by the embodiment. The above will become apparent from the description, drawings, claims, etc. From descriptions such as these, it is possible to extract other issues. [Means for solving the problem]

[0012] The configuration that can solve the above problem is described below. Before that, the terms used in this specification are In this specification, a transistor is defined as a gate, a drain, and a source. The element has at least three terminals, including a drain terminal and a drain electrode. , drain region or drain electrode) and source (source terminal, source region or source A channel region is formed between the drain and the source. It is possible to flush the

[0013] Here, the source and drain vary depending on the structure or operating conditions of the transistor. Therefore, it is difficult to determine which is the source and which is the drain. The part that functions as a source and the part that functions as a drain are not called a source or a drain. One of the source and drain is referred to as a first electrode, and the other of the source and drain is referred to as a second electrode. It may be written as "polar."

[0014] In addition, for two-terminal elements such as capacitors and diodes, one electrode is called the first electrode. In some cases, the first electrode is called the "electrode" and the other electrode is called the "second electrode." Even if there is a distinction between positive and negative electrodes, it does not indicate which electrode is the first electrode. However, if it is necessary to specify the positive and negative poles due to the nature of the circuit, they shall be separately indicated. There are times when this happens.

[0015] In this specification, the terms "first," "second," "third," etc., refer to various elements, members, regions, It is used to describe a layer or area that is distinct from others. Thus, first, second, third, etc. Any of the terms does not limit the number of elements, members, regions, layers, areas, etc. For example, "first" can be replaced with "second" or "third," etc.

[0016] In this specification, when it is explicitly stated that X and Y are connected, When X and Y are electrically connected, when X and Y are functionally connected, and when X and Y are This includes the case where X and Y are directly connected. Here, X and Y are objects (e.g. For example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, etc. In this case, the present invention is not limited to a specific connection relationship, for example, a connection relationship shown in a drawing or a sentence, but may be applied to any other connection relationship shown in a drawing or a sentence. This also includes connections other than those shown in the text.

[0017] An example of a case where X and Y are electrically connected is The elements to be considered (e.g., switches, transistors, capacitance elements, inductors, resistance elements, One or more resistors (e.g., diodes) can be connected between X and Y.

[0018] In addition, when it is explicitly stated that X and Y are electrically connected, it means that X and Y are electrically When X and Y are directly connected (i.e., when another element or circuit is placed between X and Y), X and Y are functionally connected (i.e., there is no distinction between X and Y) and When X and Y are connected directly ( In other words, X and Y are connected without any other element or circuit between them. In other words, when it is explicitly stated that something is electrically connected, it should simply be "" is the same as if it were expressly stated that the

[0019] In this specification, active elements (such as transistors) and passive elements (such as capacitors) are referred to as For all terminals of the device, etc., a person skilled in the art can easily identify the terminals without specifying the connection destination. In particular, in the case where the terminal is connected to multiple destinations, If possible, there is no need to limit the connection of the terminal to a specific location. , to specify the connection destination of only some of the terminals of active elements, passive elements, etc. This may constitute an embodiment of the invention.

[0020] In this specification and the like, if at least the connection destination of a certain circuit is specified, it is understood by those skilled in the art that If you are a person who has experience in the field of electronics, you may be able to identify the invention. In some cases, a person skilled in the art may be able to identify the invention by at least specifying the function.

[0021] Therefore, even if the function of a certain circuit is not specified, if the connection destination is specified, it can be regarded as an invention. The present invention is disclosed as an embodiment, and can be implemented as one embodiment of the present invention. For a certain circuit, even if the connection destination is not specified, specifying the function is considered as one aspect of the invention. and can be construed as one embodiment of the invention.

[0022] In this specification, etc., anything explicitly stated as singular shall be understood to be singular. However, it is not limited to this, and it is also possible to have multiple. However, where something is explicitly stated as plural, it is preferable that it be plural. However, it is not limited to this and may be singular.

[0023] In this specification and the like, pixels may be arranged (distributed) in a matrix. Here, the pixels being arranged (arranged) in a matrix means that the pixels are arranged vertically or horizontally. When the pixels are arranged in a straight line or in a jagged line, Therefore, for example, full color display using three color elements (e.g. RGB) If you do this, the dots of the three color elements will be arranged in a delta arrangement when they are arranged in stripes. This includes cases where the image is arranged in a mosaic arrangement, Bayer arrangement, or mosaic arrangement. The size of the display area may differ for each dot of the color element. This makes it possible to reduce power consumption or extend the life of the display element.

[0024] One aspect of the present invention is a semiconductor device including a first gate signal line, a second gate signal line, a data line, and a first transistor. and the second transistor, the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor. The first transistor has a gate connected to a first gate signal. a first electrode of the first transistor is connected to the data line; The second electrode is connected to the second electrode of the fourth transistor and the first electrode of the fifth transistor. The gate of the second transistor is connected to the first gate signal line, and the first electrode of the second transistor is A second electrode of the third transistor is connected to a first electrode of the fourth transistor; The second electrode of the third transistor is connected to the gate of the fourth transistor and the first electrode of the capacitor. The gate of the fourth transistor is connected to the second gate signal line, and the second electrode of the fourth transistor is connected to the fifth gate signal line. the gate of the fifth transistor is connected to the second gate signal line; The second electrode of the transistor is connected to the first electrode of the display element, the second electrode of the capacitor, and the sixth transistor. The gate of the sixth transistor is connected to the first gate signal line. The display device is an active matrix type display device having a pixel circuit.

[0025] The number of transistors is not limited to six, but may be seven or more. The number of capacitors and display elements is not limited to one each, and there may be two or more of each. However, there may be two or more of each. Those formed in parallel are regarded as one capacitor and one display element.

[0026] Here, the first to sixth transistors are all of the same conductivity type. If the first to sixth transistors are N-channel type, the first electrode of the display element is a positive electrode. The first electrode is a negative electrode, and the second electrode is a negative electrode. In this case, the first electrode of the display element is a negative electrode and the second electrode is a positive electrode.

[0027] In addition, if the first to sixth transistors are N-channel type, the third transistor The potential of the first electrode of the sixth transistor is the potential of the second electrode of the sixth transistor and the potential of the second electrode of the display element. If the first to sixth transistors are P-channel type, the potential of the third transistor is higher than that of the first transistor. The potential of the first electrode of the transistor is the potential of the second electrode of the sixth transistor and the potential of the display element is lower than the potential of the second electrode.

[0028] When the first to sixth transistors are N-channel transistors, the sixth transistor The potential of the second electrode of the display element may be lower than or equal to the potential of the negative electrode of the display element. The potential of the second electrode of the sixth transistor may be higher than the potential of the negative electrode of the display element. It is preferable that the potential difference between the second electrode of the display element and the negative electrode of the display element is smaller than the threshold value of the display element. It is.

[0029] Furthermore, the absolute value of the difference between the potential of the first electrode of the third transistor and the potential of the second electrode of the display element is , preferably five times or more the absolute value of the threshold voltage of the fourth transistor.

[0030] In addition, in one embodiment of the present invention, in the above circuit, a pulse input to the second gate signal line is and a period during which the pulse is overlapped with a pulse input to the first gate signal line. A method for driving a matrix type display device.

[0031] Another embodiment of the present invention is a pixel including a display element, a capacitor, a data line, and a first gate signal line. A plurality of transistors (transistors) whose gates are connected to the second gate signal line and the first gate signal line A transistor A and a plurality of transistors (transistors A) whose gates are connected to the second gate signal line. A first electrode of transistor A and a second electrode of transistor B are connected to the first The gate of the transistor A is connected to the second electrode of the transistor B and the first electrode of the capacitor. Next, the second electrode of the transistor A is connected to the other first electrode of the transistor B and the other second electrode of the transistor A. An active matrix having a circuit having a transistor (transistor C) to which It is a type display device.

[0032] Here, the other first electrode of the transistor A may be connected to a data line. The other second electrodes of the transistors A to B may be connected to the first electrodes of the display elements. The transistors C may all be of the N-channel type. The potential may be higher than the potential of the second electrode of the display element.

[0033] In one embodiment of the present invention, in the above circuit, either the transistor A or the transistor B is The first period is when both transistors are on, and the second period is when transistor A is on and transistor B is off. a third period in which both transistor A and transistor B are off; a fourth period during which transistor A is off and transistor B is on; A method for driving a Trick type display device.

[0034] Here, the first period is followed by the second period, the second period is followed by the third period, and the third period is followed by the fourth period. Preferably, the fourth period is followed by the first period. Also, the first period and the third period are equal in length. The setting may be made so that the Effect of the Invention

[0035] With the above configuration, the number of wiring and elements (transistors) required for a pixel (or dot) is For example, compared to the example in Figure 2, the number of gate signal lines has been reduced by three to two. Since a pulse needs to be input to the gate signal line, a drive circuit is also required. However, if the number of gate signal lines is reduced, the driving circuitry for them is also unnecessary, and the power consumption is reduced accordingly. This reduces power consumption, and the reduction in wiring is also favorable for increasing the degree of integration.

[0036] In particular, wiring other than data lines that require potential fluctuation (i.e., wiring connected to the gate of a transistor) The number of wirings (connected to the substrate) is five in FIG. 2, but in the present invention, it can be two. Fluctuations lead to increased power consumption, so reducing the number of wiring lines that require potential fluctuations can reduce power consumption. It can be reduced.

[0037] Even with this simplified configuration, the transistor threshold voltage is the same as in the conventional example. In addition, it is possible to correct the display characteristics that deteriorate over time as the display is used. In elements (e.g., organic electroluminescence elements and light-emitting diodes), the deterioration can be compensated for. can. [Brief description of the drawings]

[0038] [Figure 1] 1A and 1B are diagrams illustrating examples of circuits in a display device of one embodiment of the present invention. [Diagram 2] FIG. 1 is a diagram illustrating an example of a circuit of a conventional display device. [Diagram 3] 1A to 1C are diagrams illustrating an example of a method for driving a display device according to one embodiment of the present invention. [Figure 4] 1A to 1C are diagrams illustrating an example of a method for driving a display device according to one embodiment of the present invention. [Diagram 5] 1A and 1B are top views illustrating examples of display devices according to embodiments of the present invention. [Figure 6] 1A to 1C are cross-sectional process diagrams illustrating an example of a manufacturing process of a display device according to one embodiment of the present invention. [Figure 7] 1A to 1C are cross-sectional process diagrams illustrating an example of a manufacturing process of a display device according to one embodiment of the present invention. [Figure 8] 1A to 1C are diagrams illustrating electronic devices using a display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0039] Hereinafter, the embodiments will be described with reference to the drawings. The present invention can be implemented in any manner without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that various modifications may be made to the embodiments and details of the present invention. The present invention should not be construed as being limited to the description of the following embodiments.

[0040] In the figures, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0041] Note that the diagram is a schematic representation of an ideal example, and is not limited to the shapes or values ​​shown in the diagram. For example, there are variations in shape due to manufacturing techniques, variations in shape due to errors, and noise. Variations in signals, voltages, or currents due to timing differences, or variations in signals, voltages, Or, it is possible to include current variation.

[0042] Furthermore, when technical terms are used to describe a particular embodiment or example, However, one aspect of the invention should not be interpreted as being limited by technical terms. .

[0043] In addition, terms not defined in this specification (including scientific and technical terms such as technical terms or academic terms) (including the above) may be used as meanings equivalent to the general meanings understood by a person skilled in the art. Words defined in dictionaries, etc. shall be interpreted in a way that is consistent with the background of the relevant technology. It is preferable that the above-mentioned

[0044] In addition, the contents (or even a part of the contents) described in one embodiment may be used in the embodiment. Another content (or a part of the content) described in the embodiment, and / or one or more other embodiments The content (or part of the content) described in the form of etc. can be done.

[0045] In addition, the same reference numerals are used when referring to items made of the same material or formed at the same time. However, when it is necessary to distinguish between them, the code is marked with "_1" or "_ For example, if multiple first layer wirings 303 are formed of the same material, If they are configured, they shall be individually labeled on the drawing as "303_1", "303_2", etc. In the specification, when the first layer wiring is referred to collectively, it is referred to as "first layer wiring 303." However, when one of them needs to be distinguished from the others, it is called "first layer wiring 303_1." It is sometimes written as "u".

[0046] (Embodiment 1) FIG. 1A illustrates an example of a circuit of a display device according to this embodiment. The first gate signal line 101 and the second gate signal line 102 are used as one dot of the display device. The wiring 102, the data line 103, the first wiring 104, the second wiring 105, and the third wiring 106 are The potentials of the first wiring 104, the second wiring 105, and the third wiring 106 are It is preferable to keep the second wiring 105 and the third wiring 106 constant. The potential may be designed and set to be

[0047] In addition, a display element 107, a capacitor 108, a first transistor 109, and a second transistor 110, a third transistor 111, a fourth transistor 112, and a fifth transistor 113. and a sixth transistor 114.

[0048] The gate of the first transistor 109 is connected to the first gate signal line 101. A first electrode of the first transistor 109 is connected to the data line 103, and a second electrode of the first transistor 109 is connected to the 4 is connected to the second electrode of the fourth transistor 112 and the first electrode of the fifth transistor 113.

[0049] The gate of the second transistor 110 is connected to the first gate signal line 101. The first electrode of the transistor 110 is connected to the second electrode of the third transistor 111 and the second electrode of the fourth transistor 11 2, and the second electrode of the second transistor 110 is connected to the first electrode of the fourth transistor 112. The gate is connected to the first electrode of the capacitor 108 .

[0050] The gate of the third transistor 111 is connected to the second gate signal line 102. The second electrode of the fifth transistor 112 is connected to the first electrode of the fifth transistor 113. The gate of the fifth transistor 113 is connected to the second gate signal line 102, and the second electrode of the fifth transistor 114 is connected to the front The first electrode of the display element 107, the second electrode of the capacitor 108, and the sixth transistor 114 The gate of the sixth transistor 114 is connected to the first gate signal line 101. do.

[0051] Furthermore, the first electrode of the third transistor 111 is connected to the first wiring 104, and the sixth transistor The second electrode of the display element 107 is connected to the third wiring 105. The first wiring 104, the second wiring 105, and the third wiring 106 are maintained at a constant potential. It is sufficient to set it as follows.

[0052] The second electrode of the first transistor 109, the second electrode of the fourth transistor 112, and the fifth transistor The intersection of the first electrodes of the fifth transistor 113 is referred to as a first node N1, and the intersection of the second electrodes of the fifth transistor 113 is referred to as a first node N2. The intersection of the first electrode of the sixth transistor 114 and the first electrode of the display element 107 is called a second node. N2, the second electrode of the second transistor 110, the gate of the fourth transistor 112, and the capacitor The intersection of the first electrodes of the capacitor 108 is called a third node N3.

[0053] Here, all the transistors are N-channel type. The first electrode is a positive electrode, and the second electrode is a negative electrode. The potential difference is required to be higher than the potential of the third wiring 105 and the third wiring 106. However, the larger the potential difference, the greater the variation in the threshold voltage of the transistors, for reasons that will be described later. It is possible to compensate for deterioration of the display element.

[0054] The potential difference is determined by the display performance of the display element 107. For example, If the threshold value of the capacitor 112 is +1V, the potential difference between the first wiring 104 and the third wiring 106 is The potential of the first wiring 104 is set to V1 or more, and preferably to V10 or more. The potential of the second wiring 105 is V2, and the potential of the third wiring 106 is V3. For example, the potential V1 can be set to +10V, potential V1 to 0V, and potential V3 to 0V.

[0055] In order to drive the circuit shown in FIG. 1A, video data is input to the data line 103, and 3 is input to the first gate signal line 101 and the second gate signal line 102. Here, V H is the potential at which the transistor turns on, V L is the power that is turned off This will be ranked 1st.

[0056] As shown in FIG. 3, one frame is a period in which the potential of the first gate signal line 101 and the potential of the second gate signal line 102 are The potential of wire 102 is V H and the potential of the first gate signal line 101 is V H Second in The potential of the gate signal line 102 is V L and the potential of the first gate signal line 101 and the potential of the second gate signal line 102 are The potential of the gate signal line 102 is V L and the potential of the first gate signal line 101 is V L The potential of the second gate signal line 102 is V H It consists of four periods, period d, where

[0057] In addition, the potential of the first gate signal line 101 is V H and the period τ1 of the second gate signal line 102. The potential is V L The period τ2 may be different, but if designed to be the same, the circuit This is preferable because it simplifies the calculation of the signal. On the other hand, the same pulse can be inverted and output to the first gate signal line 101. By outputting this through a delay circuit, it can be output to the second gate signal line 102.

[0058] The operation state of the transistor in each period will be described below with reference to FIG. Fig. 4(B) shows the period a, Fig. 4(B) shows the period b, Fig. 4(C) shows the period c, Fig. 4(D) shows the period The transistor symbol indicates the state of the transistor in the on state. A circle is overlapped, and a cross is overlapped for a transistor in an off state.

[0059] In the period a, all the transistors connected to the first gate signal line 101 and the second gate signal line 102 are turned on. A transistor (first transistor 109, second transistor 110, third transistor 111, The fifth transistor 113 and the sixth transistor 114 are turned on. The potential of the gate and the potential of the first electrode of the transistor 112 are approximately equal to V1, and the potential of the second electrode (third electrode) is approximately equal to V2. The potential of node N1) is V Data is almost equal to the former. At this time, the first electrode of the capacitor (the third node N3 The potential of the second electrode (second node N2) of the capacitor is approximately equal to V1, and the potential of the second electrode (second node N2) of the capacitor is approximately equal to V2. Almost equal.

[0060] As described above, a potential is applied between the first electrode and the second electrode of the fourth transistor 112 in the on state. A potential difference occurs between the first electrode and the second electrode of the fifth transistor 113, which is also in the on state. As a result, the fourth transistor 112 and the fifth transistor 113 consume power. Therefore, it is preferable that the period a is as short as possible, and is set to 100 ns to 500 ns. It would be good to do so.

[0061] During the period b, the potential of the second gate signal line 102 is V L Therefore, the third traffic The fifth transistor 111 and the fifth transistor 113 are turned off. At the beginning of period b, the potential is the same as that of period a. The sixth transistor 110 and the sixth transistor 114 are on. Therefore, the potential of the first node N1 is , the potential of the data V Data In addition, the potential of the second node N2 becomes V2.

[0062] The fourth transistor 112 is on and the potential V Data is lower than the potential V1, A charge is transferred from the third node N3 through the first electrode of the fourth transistor 112 to the first node N1. As a result, the potential of the third node N3 drops. The drop in the potential of the node N3 occurs when the potential of the third node N3 is (V Data +V th ) until That is, the potential difference between the first electrode and the second electrode of the capacitor 108 is (V Data +V th -V2).

[0063] During the period c, the potential of the first gate signal line 101 is also V L Therefore, the first traffic The second transistor 109, the second transistor 110, and the sixth transistor 114 are also turned off. The potentials of the first node N1, the second node N2, and the third node N3 are almost the same as those in the period b. No change.

[0064] During the period d, the potential of the second gate signal line 102 is V H Therefore, the third traffic The fifth transistor 111 and the fifth transistor 113 are turned on. Since the potential of N2 is V2, the fifth transistor 113 is turned on. The potential of the second electrode of the transistor 112 is also V2. As a result, the potential of the first electrode of the fourth transistor 112 becomes V1.

[0065] At this time, the potential of the gate of the fourth transistor 112 is (V Data +V th ) and The first electrode has a higher potential than the second electrode. The potential difference between the two electrodes (V Data +V th -V2) is the potential difference between the first and second electrodes The current I flowing between the first and second electrodes is smaller than (V1-V2) and is in the saturation region. According to the drain current equation:

[0066] In other words, the potential difference between the gate and source (the second electrode in this case) minus the threshold voltage In this case, the second electrode of the fourth transistor 112 corresponds to the source.

[0067] I∝{(V Data +V th ―V2)―V th} 2 =(V Data -V2) 2 (Formula 1 )

[0068] As is clear from equation 1, the current I does not depend on the threshold value of the fourth transistor 112.

[0069] As the current flows and charge accumulates at the second node, the potential at the second node N2 rises. However, the increase in the potential of the second node N2 is reduced by the capacitive coupling via the capacitor 108 as follows: Since the potential of the third node N3 rises, the potential of the third node N3 and the potential of the second node N2 The difference between these two does not change. That is, the current I is constant regardless of the potential of the second node N2.

[0070] As the potential of the second node N2 increases, the display element 107 becomes more likely to pass a current. When the potential of node N2 reaches a certain value, the current flowing through display element 107 and current I are balanced. That is, the potential of the second node N2 is constant. The display state (luminous intensity, transmittance, reflectance, color tone, saturation, etc.) changes depending on the As is clear from Equation 1, the data V Data In this way, This makes it possible to correct variations in the threshold voltage of the transistors.

[0071] As is clear from Equation 1, in order for the current I to be constant, the potential of the third node N3 must be It is essential that the potential of the third node N3 is constant. When the potential of the third node N3 fluctuates, the current I For example, if the turn-off characteristics of the second transistor 110 are insufficient, the turn-off characteristics of the second transistor 110 may vary for one frame. During this period, the potential of the third node N3 rises.

[0072] As the potential of the third node N3 rises, the current I also increases. This can appear as defective pixels or dots, but can also be seen across displays in general. If it is excessive, it may cause display defects such as flickering. It is preferable that the off-characteristics of 0 are sufficient (i.e., the off-current is sufficiently low).

[0073] (Embodiment 2) In this embodiment, one embodiment of a display device of the present invention will be described with reference to FIGS. In this embodiment, a display device using an organic EL element as a light-emitting element will be described. A light-emitting layer is formed on the active matrix circuit, and light is emitted above the active matrix circuit. A top emission type display device that displays images by illuminating the image will now be described.

[0074] 5A to 5C show wiring and contact holes used to manufacture one dot of a display device. The layout of the layers, semiconductor layers, etc. is shown. Note that various insulating films, etc. are not shown. Each dotted rectangle represents one dot.

[0075] FIG. 5A shows a first layer wiring 303, a semiconductor layer 305, and a wiring from the first layer wiring to the upper wiring. The position of the first contact hole 306 is shown. Among these, the first layer wiring 303_1 is shown in FIG. ) corresponds to the second wiring 105. The first layer wiring 303_2 corresponds to the second wiring 105 in FIG. The first layer wiring 303_4 becomes a part of the first gate signal line 101. This becomes a part of the gate signal line 102. Also, a part of the first layer wiring 303_3 is This becomes a part of the first electrode of the capacitor 108. The other first layer wiring 303 is the same as that shown in FIG. These serve as the gates of the first transistor 109 to the sixth transistor 114 .

[0076] In addition, the semiconductor layer 305_1, the semiconductor layer 305_2, the semiconductor layer 305_3, and the semiconductor layer 305 The semiconductor layer 305_4, the semiconductor layer 305_5, and the semiconductor layer 305_6 are the first transistors in FIG. transistor 109, second transistor 110, third transistor 111, fourth transistor 1 12, the fifth transistor 113, and the sixth transistor 114.

[0077] FIG. 5B shows a second layer wiring 307 and a second contact hole 31 connected to the wiring above it. 0 position. Among these, the second layer wiring 307_1 becomes the data line 103 in FIG. A part of the second layer wiring 307_6 corresponds to a part of the second electrode of the capacitor 108 in FIG. The other second layer wirings 307 are connected to the first transistor 109 to the sixth transistor 106 in FIG. This serves as the first electrode or the second electrode of the transistor 114 .

[0078] FIG. 5C shows a third contact hole 311 connected to the first electrode of the display element. 1A. Among these, the third layer wiring 311_1 corresponds to the first gate signal line 114 in FIG. 01, the third layer wiring 311_4 becomes a part of the second gate signal line 102, and the third The layer wiring 311_5 becomes a part of the first wiring 104.

[0079] The wiring layers, semiconductor layers, contact holes, etc., having the shapes shown in FIGS. 5(A) to 5(C) are laminated. By this, a circuit for use in a display device can be fabricated. A method for manufacturing the display device will be described. Note that Figures 6 and 7 are cross-sectional views of the manufacturing process. corresponds to the cross section taken along dashed line AB in FIGS. 5(A) to 5(C).

[0080] A base insulating layer 302 is formed on a first substrate 301 having an insulating surface. After the formation of the semiconductor layer, a first photolithography process is performed to form a resist mask and etch the semiconductor layer. The unnecessary portions are removed by etching to form the first layer wiring 303. As shown in FIG. When the end of the first-layer wiring 303 is etched to form a tapered shape, the laminated film This is preferable because it improves the covering property.

[0081] There is no particular limitation on the substrate that can be used for the first substrate 301. However, at least the substrate that can be used for the subsequent processing should be The first substrate 301 is required to have a heat resistance sufficient to withstand heat treatment. However, the present invention is not limited to this, and various substrates such as transparent, opaque, insulating, and conductive substrates can be used. In particular, in this embodiment, the light used for display is emitted from the first substrate. The substrate does not need to be transparent because the light is radiated from the opposite direction. For example, to improve heat dissipation, A metallic material may also be used.

[0082] When a glass substrate is used as the first substrate, if the temperature of the subsequent heat treatment is high, the distortion point The glass substrate is preferably made of aluminosilicate glass. Glass materials such as vitreous glass, aluminoborosilicate glass, and barium borosilicate glass are used. In addition, by containing more barium oxide (BaO) than boric acid, Therefore, glass substrates containing more BaO than B2O3 are used. It is preferable to use:

[0083] Instead of the above glass substrate, an insulating substrate such as a ceramic substrate, a quartz substrate, or a sapphire substrate may be used. Alternatively, a substrate made of an insulating material may be used. Alternatively, a substrate made of crystallized glass or the like may be used.

[0084] The base insulating layer 302 has a function of preventing the diffusion of impurity elements from the first substrate 301. In addition, if the first substrate 301 is conductive, it also functions to maintain the insulation of the circuit. The insulating layer 302 is selected from a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, and a silicon oxynitride film. The insulating film may be formed by a laminate structure of one or more films.

[0085] The material of the first layer wiring 303 is Mo, Ti, Cr, Ta, W, Al, Cu, Pt, Pd, etc. Forming the material in a single layer or multilayer using metal materials or alloy materials that mainly contain these materials For example, by stacking indium nitride or molybdenum oxide, which have high work functions, on Ti, The structure can be as follows.

[0086] Next, a gate insulator 304 is formed on the first layer wiring 303. A silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, etc. are formed by using a plasma CVD method or a sputtering method. A silicon nitride oxide layer, a silicon nitride oxide layer, or an aluminum oxide layer can be formed as a single layer or a stacked layer. For example, the deposition gas is SiH4 and N2O, and the oxidation is performed by the plasma CVD method. A silicon nitride film may be formed.

[0087] Next, a semiconductor layer is formed and an island-shaped semiconductor layer 305 is formed by a second photolithography process. The semiconductor layer 305 is formed using a material such as a silicon semiconductor or an oxide semiconductor. Silicon semiconductors include single crystal silicon and polycrystalline silicon, and are As the semiconductor material, an In--Ga--Zn oxide or the like can be appropriately used.

[0088] In this case, for example, In-Ga-Zn oxide is a material containing In, Ga, and Zn as main components. The ratio of In, Ga, and Zn does not matter. Metal elements other than a and Zn may be present.

[0089] For example, the semiconductor layer 305 is made of an oxide semiconductor that is an In-Ga-Zn oxide. By using a semiconductor layer with a low off-state current, the leakage current of the transistor can be reduced, and in particular, It is preferable to keep the potential of the third node N3 of 1(A) constant in order to improve the display quality.

[0090] The oxide semiconductor is not limited to In-Ga-Zn oxide, but may be at least indium ( In particular, it is preferable to use a material containing In and Zn. In order to reduce variation in electrical characteristics of a transistor using the oxide semiconductor, It is preferable to have gallium (Ga) in addition to the above as a stabilizer. It is also preferable to have tin (Sn) as a stabilizer. It is preferable that the stabilizer contains hafnium (Hf). It is preferable that the metal oxide contains at least one element selected from the group consisting of arsenic (Al) and arsenic (Al).

[0091] Other stabilizers include the lanthanides lanthanum (La) and cerium ( Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Ho, Erbium, Thulium, Ytterbium, Ru The element may contain one or more of the elements tetraethynyl (Te) and tetraethynyl (Lu).

[0092] For example, other oxide semiconductors include indium oxide, tin oxide, zinc oxide, and binary gold oxide. In-Zn oxides, Sn-Ga-Zn oxides, and Al-Ga-Zn oxides are oxides of metals. Oxide, Sn-Al-Zn oxide, Sn-Zn oxide, Al-Zn oxide, Zn- Mg-based oxides, Sn-Mg-based oxides, In-Mg-based oxides, In-Ga-based oxides, ternary oxides Metal oxides such as In-Al-Zn oxides, In-Sn-Zn oxides, and In-Hf -Zn-based oxide, In-La-Zn-based oxide, In-Ce-Zn-based oxide, In-Pr- Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Sm-Z n-type oxides, In-Eu-Zn-type oxides, In-Gd-Zn-type oxides, In-Tb-Zn oxide, In-Dy-Zn oxide, In-Ho-Zn oxide, In-Er-Zn oxide Oxide, In-Tm-Zn oxide, In-Yb-Zn oxide, In-Lu-Zn ​​oxide oxides of quaternary metals, such as In-Sn-Ga-Zn oxides and In-Hf-Ga- Zn-based oxide, In-Al-Ga-Zn-based oxide, In-Sn-Al-Zn-based oxide, I n-Sn-Hf-Zn oxide and In-Hf-Al-Zn oxide can be used. .

[0093] For example, In:Ga:Zn=1:1:1 (=1 / 3:1 / 3:1 / 3) or In:G In-Ga-Zn oxide with an atomic ratio of a:Zn=2:2:1 (=2 / 5:2 / 5:1 / 5) The oxides of In:Sn:Zn=1: 1:1(=1 / 3:1 / 3:1 / 3), In:Sn:Zn=2:1:3(=1 / 3:1 / 6:1 / 2) or In:Sn:Zn=2:1:5(=1 / 4:1 / 8:5 / 8) It is advisable to use an In-Sn-Zn oxide having a molecular ratio or an oxide having a composition close to that.

[0094] However, the present invention is not limited to these, and can be applied to any semiconductor characteristics (mobility, threshold, variation, etc.) required. In order to obtain the required semiconductor characteristics, the appropriate composition should be used. Carrier concentration, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic bond length, density It is preferable to make the above appropriate.

[0095] For example, high mobility can be obtained relatively easily with In-Sn-Zn oxides. In the case of In-Ga-Zn oxides, the mobility can be increased by increasing the defect density in the bulk. It is possible.

[0096] For example, the atomic ratio of In, Ga, and Zn is In:Ga:Zn=a:b:c(a+b+ c=1), the atomic ratio of the oxide is In:Ga:Zn=A:B:C (A+B+C=1). The oxides are in the neighborhood of r if a, b, and c are (a-A) 2 +(b-B) 2 +(c-C) 2 ≦r 2 The condition is satisfied. For example, r can be set to 0.05. The same applies to other oxides. It is.

[0097] The oxide semiconductor may be single-crystalline or non-single-crystalline. In the latter case, it may be amorphous or polycrystalline. In addition, the structure may include a portion having crystallinity in the amorphous state, or a non-amorphous structure. That's fine too.

[0098] Since it is relatively easy to obtain a flat surface for an amorphous oxide semiconductor, This can reduce interface scattering when fabricating a transistor, and can be achieved relatively easily and with relatively high quality. Therefore, high mobility can be obtained.

[0099] In addition, in a crystalline oxide semiconductor, defects in the bulk can be further reduced, and the surface By improving the flatness of the oxide semiconductor, it is possible to obtain a mobility equal to or higher than that of an oxide semiconductor in an amorphous state. In order to improve the flatness of the surface, it is preferable to form an oxide semiconductor on a flat surface. Specifically, the average surface roughness (Ra) is 1 nm or less, preferably 0.3 nm or less, and more preferably It is preferable to form the surface on a thickness of 0.1 nm or less.

[0100] After forming the semiconductor layer 305, a part of the gate insulator 304 is photolithographically Thus, a first contact hole 306 is formed, which reaches the first layer wiring. The method for forming the hole 306 may be appropriately selected from dry etching, wet etching, and the like. The cross section up to this point is shown in Figure 6(A).

[0101] Next, a conductive film is formed over the gate insulator 304 and the semiconductor layer 305, and a fourth photolithography is performed. The second layer wiring 307 is formed by a lithography process. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W. or a metal nitride film containing the above-mentioned elements (titanium nitride film, molybdenum nitride film, nitrogen nitride film, etc.) A tungsten oxide film, etc. can be used.

[0102] In addition, Ti, Mo, W, etc. may be applied to either or both of the upper and lower sides of the metal film such as Al or Cu. High melting point metal film or metal nitride film (titanium nitride film, molybdenum nitride film, titanium nitride film, etc.) Alternatively, a laminate of a fluorine film and a fluorine-containing film (stainless steel film) may be used.

[0103] The second layer wiring 307 may be made of a conductive metal oxide. Examples include indium oxide, tin oxide, zinc oxide, In-Sn oxide (ITO, etc.), In- Zn-based oxide or these metal oxide materials containing silicon oxide are used. This can be done.

[0104] Next, a first interlayer insulator 308 and a second interlayer wiring 307 are formed on the semiconductor layer 305 and the second layer wiring 307. The first interlayer insulator 309 is formed. The first interlayer insulator 308 may be a silicon oxide film, an oxynitride film, or the like. An inorganic insulating film such as a silicon film can be used. In order to reduce surface irregularities caused by transistors, it is preferable to select an insulating film having a planarizing function. For example, inorganic materials such as SOG (spin-on glass), polyimide, acrylic, Organic materials such as benzocyclobutene can be used. The second interlayer insulator 309 may be formed by laminating a plurality of insulating films.

[0105] Next, the first interlayer insulator 308 and the second interlayer insulator 309 are formed by a fifth photolithography process. A second contact hole 310 is formed in the structure 309, reaching the second layer wiring 307. The method for forming the tact hole 310 is appropriately selected from dry etching, wet etching, and the like. The state up to this point is shown in Figure 6(B).

[0106] Next, a conductive film is formed on the second interlayer insulator, and a third layer is formed by a sixth photolithography process. The wiring 311 is formed. The conductive film used for the third layer wiring 311 is the same as that of the second layer wiring 307. It can be selected from the materials used, but materials with particularly low resistivity are preferable, such as Cu or its alloy. It is recommended to use:

[0107] Next, a third interlayer insulator 312 and a fourth interlayer insulator 313 are formed on the third layer wiring 311. The third interlayer insulator 312 and the fourth interlayer insulator 313 are formed on the first interlayer insulator 308 and the second interlayer insulator 309. It can be formed of a material that can be used for the insulator 309 .

[0108] Next, the third interlayer insulator 312 and the fourth interlayer insulator 313 are formed by a seventh photolithography process. A third contact hole 314 is formed in the structure 313, the third contact hole 314 reaching the third layer wiring 311. The method for forming the tact hole 314 is appropriately selected from dry etching, wet etching, and the like. The state up to this point is shown in Figure 6(C).

[0109] Next, a conductive film is formed on the fourth interlayer insulator 313, and then the eighth photolithography process is performed. The reflective electrode layer 315 is the first electrode layer of the display element 107 shown in FIG. The reflective electrode layer 315 corresponds to the rear electrode in order to improve the light extraction efficiency. It is preferable to use a material that efficiently reflects light emitted by the light emitting layer 317 formed on the substrate 311 .

[0110] The reflective electrode layer 315 may have a laminated structure. For example, A thin conductive film made of metal oxide or titanium is formed on one side, and a highly reflective metal film (aluminum) is formed on the other side. For example, aluminum, an alloy containing aluminum, or silver can be used. By using this structure, the light-emitting layer 317 and the metal film (aluminum, This makes it possible to suppress the formation of an insulating film between the material (such as an alloy containing silver or silver) and the material itself. This is preferable.

[0111] Next, a partition wall 316 is formed on the reflective electrode layer 315. The partition wall 316 is made of an organic insulating material. In particular, the reflective electrode layer 315 is formed using a photosensitive resin material. An opening is formed on the top, and the side wall of the opening becomes an inclined surface formed with a continuous curvature. It is preferable to form it as follows.

[0112] Next, a reflective electrode layer 315 is formed on the reflective electrode layer 315, a light-emitting layer 317 is formed on the partition wall 316, and a transparent electrode layer 317 is formed on the light-emitting layer 317. The light-emitting layer 317 may be a single layer or a laminate of multiple layers. In the present embodiment, however, the light emitted by the light emitting layer 317 is It is preferable that the light is white and has peaks in the red, green, and blue wavelength regions.

[0113] In this embodiment, an organic EL material is used for the light emitting layer 317, so the light emitting layer 317 is a true It is preferable to form the light-emitting layer 317 by vacuum deposition. Since it is difficult to form a pattern by a photolithography process on the film formed on the The light emitting layer 317 and the transparent electrode layer 318 are uniformly formed on the first substrate. Reference numeral 318 corresponds to the second electrode of the display element 107 in FIG.

[0114] Through the above steps, a transistor for controlling the driving of the light-emitting element and a light-emitting layer 317 are formed. The state up to this point is shown in Figure 7(A).

[0115] Next, a light-shielding film 320, a color filter 321, and an overcoat film 322 were formed. The method for producing the second substrate 319 is as follows. The second substrate 319 must be transparent. However, other conditions are more lenient than those for the first substrate 301, and materials with poor heat resistance can be used. .

[0116] First, an opaque film is formed on the second substrate 319, and a photolithography process is performed to form a shielding film. The light shielding film 320 is formed. The light shielding film 320 prevents color mixing and light leakage between pixels. The light-shielding film 320 may not be provided. Metal films with low reflectance such as ROM, or organic resin films impregnated with black pigments or black dyes etc. can be used.

[0117] Next, a color filter 321 is formed on the second substrate 319 and the light-shielding film 320. The color filter 321 is a colored layer that transmits light of a specific wavelength band. For example, A red (R) color filter that transmits long-band light, and a green (G) color filter that transmits light in the green wavelength range. (G) color filter, and blue (B) color filter that transmits light in the blue wavelength range. Each color filter can be formed by using a known material, for example, by printing or inkjet printing. The desired positions are then formed by a method using a jet method, an etching method using photolithography technology, etc. Form.

[0118] Although the method using three colors of RGB has been described here, the present invention is not limited to this method. It may be a configuration using four colors, GB and Y (yellow), or a configuration using five or more colors.

[0119] Next, an overcoat film 322 is formed on the light-shielding film 320 and the color filter 321. The overcoat film 322 is preferably made of an organic resin film such as acrylic or polyimide. The overcoat film 322 can remove impurities contained in the color filter 321. It is possible to prevent the components from diffusing to the light-emitting layer 317 side. The insulating film 2 may have a laminated structure of an organic resin film and an inorganic insulating film. The overcoat film 322 may be formed of silicon, silicon oxide, or the like. It is not necessary to do so.

[0120] Through the above steps, the light-shielding film 320, the color filter 321, and the overcoat film 322 are formed. Then, the first substrate 301 and the second substrate 319 are formed. The two are aligned and bonded together to form a display device.

[0121] There is no particular limitation on the bonding of the first substrate 301 and the second substrate 319. The first substrate 301 and the second substrate 302 are connected to each other by a light-transmitting adhesive. A sealed space 323 is formed between the first and second electrodes 19. The space 323 is not particularly limited, and may be a light-transmitting space. It is sufficient that the insulation is stable and that outside air does not enter.

[0122] However, it is preferable to fill the space 323 with a light-transmitting material having a refractive index greater than that of air. When the refractive index is small, the light emitted from the light emitting layer 317 in an oblique direction enters the space 323. This causes further refraction, and in some cases, light may escape from adjacent pixels. As the material 323, for example, a material having a large refractive index that allows the first substrate 301 and the second substrate 319 to be bonded to each other is used. A thick, light-transmitting adhesive can be used.

[0123] In addition, an inert gas such as nitrogen or argon can also be used. A desiccant or the like may be dispersed in the liquid. The state up to this point is shown in Figure 7(B).

[0124] The display device shown in FIG. 7B is a so-called The display device has a top emission structure. The white light emitted from the LED is separated into different colors by the color filter 321.

[0125] A top-emitting device that combines such a white-emitting light-emitting element with a color filter is The display device with the white + CF + TE structure (hereinafter referred to as the white + CF + TE structure) and the display device with the color-coded method The light-emitting element thus formed is used in a display device with a top emission structure (hereinafter, color-coded + TE structure). The color-by-color method involves applying RGB materials to each pixel by deposition or other methods. This is a method of painting different colors.

[0126] First, for colorization, in the case of a white + CF + TE structure, a color filter is used to make the color Therefore, a color filter is required. In this case, color filters are not required because each pixel is colored by deposition or other methods. However, the white + CF + TE structure requires a color filter, but In the +TE structure, a metal mask is required to apply different colors. It is possible to paint different colors without using a mask by using inkjet printing, etc. There are still many technical challenges to overcome.

[0127] In addition, if a metal mask is used, the deposition material will also be deposited on the metal mask. However, there are also issues such as poor material usage efficiency and high costs. If the light-emitting element comes into contact with the substrate, it may be destroyed, or scratches or particles may be generated due to the contact. The yield will decrease.

[0128] Next, for the pixel size, in the color-separate + TE structure, it is necessary to color each pixel differently. Therefore, it is necessary to provide an area between the pixels for coloring. This results in a significant reduction in the aperture ratio. In the case of the CF+TE structure, there is no need to provide an area between pixels for color separation, so one pixel The size of the pixel can be increased, and the aperture ratio can be improved accordingly.

[0129] Furthermore, when enlarging a display device, the manufacturing technology for the display device becomes an essential element. In the case of a separate + TE structure, a metal mask is required for painting, and a large-sized metal It is difficult because the technology and production facilities for masks are not yet established. Even if the mask technology and production facilities are established, the deposition material is also deposited on the metal mask. On the other hand, in the case of the white + CT + TE structure, Since a mask is not required, the present invention is suitable since it can be manufactured using conventional production equipment.

[0130] In addition, the manufacturing equipment for display devices is an important factor in the productivity of display devices. For example, When the light emitting element is formed into a multi-layered structure, the device for manufacturing the display device is in-line or It is preferable to form a plurality of deposition sources on a substrate at once or continuously as a multi-chamber. In the case of the color-by-color + TE structure, it is necessary to color each pixel differently, so In order to form the mask at the desired position, it is necessary to replace the metal mask. Therefore, it is difficult to make the manufacturing equipment in-line or multi-chamber. On the other hand, in the case of the white + CF + TE structure, there is no need to use a metal mask, so in-line Alternatively, it is easy to configure the manufacturing apparatus to have a multi-chamber structure.

[0131] (Embodiment 3) In this embodiment mode, the components of an electronic device manufactured using the display device described in the above embodiment mode will be described. An example will be described with reference to FIG.

[0132] As an example of an electronic device to which the present invention can be applied, a television device (television or television (also called television receivers), computer monitors, digital cameras, digital video Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio players These include video game devices, gaming machines (pachinko machines, slot machines, etc.), and game cabinets. Specific examples of electronic devices are shown in FIG.

[0133] FIG. 8A shows a table 400 having a display unit. The table 400 has a housing 4 A display unit 403 is incorporated in the display device 401. The display unit 403 can display an image. In addition, the housing 401 is supported by four legs 402. The housing 401 has a power cord 405 for supplying power.

[0134] The display unit 403 has a touch input function, and the table 400 is displayed on the display unit 403. By touching the displayed display button 404 with a finger or the like, the screen can be operated or information can be input. In addition, the screen of the display unit 403 can be vertically supported relative to the floor by a hinge provided on the housing 401. It can also be set upright and used as a television set. If you install a large screen television, the free space will be narrowed, but if you put it on a table, If the display unit is built in, the space in the room can be used more effectively.

[0135] By using the display device having the spacers having the light-shielding properties shown in the above embodiment, Since color bleeding and color shift are unlikely to occur in the display unit 403, the display device is used as the display unit 403. This makes it possible to provide a display unit 403 with higher display quality than the conventional display unit. The pair of substrates are held together by the spacer, making it extremely resistant to external forces such as shock and distortion. Since the table is strong, it can be suitably used as the table shown in FIG.

[0136] FIG. 8B shows a television device 410. The television device 410 has a housing A display unit 412 is incorporated in the display device 411. The above-mentioned can be used for the display unit 412, and the display unit 412 can display an image. It is possible. In this example, the case 411 is supported by a stand 413. do.

[0137] The television device 410 can be operated using an operation switch provided on the housing 411 or a separate remote control. This can be done by the operation unit 414. 6, the channel and volume can be operated, and the image displayed on the display unit 412 can be The image can be operated by the remote control 414. A display unit 415 for displaying information output from the

[0138] The television device 410 shown in FIG. 8(B) includes a receiver, a modem, and the like. The television device 410 can receive general television broadcasts using a receiver, and further By connecting to a wired or wireless communication network via a modem, (from sender to receiver) or bidirectional (between sender and receiver, or between receivers) It is also possible to communicate information.

[0139] By using the display device having the spacers having the light-shielding properties shown in the above embodiment, Since color bleeding and color shifts are unlikely to occur when using the display device as a display for a television set, By using the same in the display unit 412, a television device with higher display quality than the conventional one can be obtained. can.

[0140] FIG. 8C shows a personal computer 420, which includes a housing 421, a housing 422, and a display unit 4. 23, a keyboard 424, an external connection port 425, a pointing device 426, etc. The computer displays a display device manufactured using one embodiment of the present invention on the display portion 423. It is produced by using

[0141] In addition, by using a display device having the spacers having the light-shielding properties described in the above embodiment, Since the display is less prone to color bleeding and color shift, the display device is By using this for the display unit 423, it is possible to provide a display unit with higher display quality than before. do.

[0142] FIG. 8D shows an example of a mobile phone. A mobile phone 430 is assembled in a housing 431. In addition to the built-in display unit 432, a power button 433, an external connection port 434, and a speaker 435 The mobile phone 430 is equipped with a microphone 436, an operation button 437, etc. The display device manufactured according to the embodiment is used for the display portion 432 .

[0143] The mobile phone 430 shown in FIG. 8(D) allows users to input information by touching a display unit 432 with a finger or the like. You can then perform operations such as typing, making calls, or composing emails.

[0144] The screen of the display unit 432 has three main modes. The first is a display mode that mainly displays images. The first mode is a display mode, the second is an input mode for inputting information such as characters, and the third mode is a display mode. It is a mixture of two modes: mode and input mode.

[0145] For example, when making a call or composing an e-mail, the display unit 432 is used mainly for inputting characters. In this input mode, you can input the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 432. stomach.

[0146] In addition, the mobile phone 430 may include a sensor for detecting tilt, such as a gyro or an acceleration sensor. By providing a detection device for detecting the orientation of the mobile phone 430 (portrait or landscape), In this case, the screen display of the display unit 432 can be automatically switched.

[0147] The screen mode can be switched by touching the display unit 432 or by using the operation button on the housing 431. 437. Also, depending on the type of image displayed on the display unit 432, For example, the image signal to be displayed on the display unit may be video data. If so, the mode is switched to display mode, and if it is text data, the mode is switched to input mode.

[0148] In the input mode, the signal detected by the optical sensor of the display unit 432 is detected. If there is no input by touch operation of 432 for a certain period of time, the screen mode will be changed from input mode to The display mode may be switched to the display mode.

[0149] The display unit 432 can also function as an image sensor. 432, you can authenticate yourself by touching your palm or fingers to capture your palm print, fingerprint, etc. In addition, the display unit may be equipped with a backlight that emits near-infrared light or a sensor that emits near-infrared light. By using a scanning light source, it is also possible to image finger veins, palm veins, etc.

[0150] By using the display device having the spacers having the light-shielding properties shown in the above embodiment, Since color bleeding and color shift are unlikely to occur in the display device, the display device is used as the display unit 4 of a mobile phone. By using this display in a mobile phone, it is possible to produce a mobile phone with higher display quality than before. In addition, the pair of substrates are held together by a light-shielding spacer, so they are not subject to shock or distortion. Since it is extremely resistant to any external force, it can be suitably used as the mobile phone shown in FIG. do.

[0151] As described above, the configurations, methods, etc. described in this embodiment may be used in conjunction with the configurations, methods, etc. described in other embodiments. They can be used in any suitable combination. [Explanation of symbols]

[0152] 101 First gate signal line 102 Second gate signal line 103 Data Line 104 1st wiring 105 2nd wiring 106 3rd wiring 107 Display element 108 Capacitor 109 1st transistor 110 Second transistor 111 3rd transistor 112 4th transistor 113 5th transistor 114 6th transistor 201 1st gate signal line 202 Second gate signal line 203 3rd gate signal line 204 4th gate signal line 205 5th gate signal line 206 Data Line 207 1st wiring 208 2nd wiring 209 3rd wiring 210 Light emitting element 211 Capacitor 212 First transistor 213 Second transistor 214 3rd transistor 215 4th transistor 216 5th transistor 217 6th transistor 218 7th transistor 301 First board 302 Undercoat insulation layer 303 1st layer wiring 304 Gate insulator 305 Semiconductor Layer 306 Contact Hall No. 1 307 2nd layer wiring 308 First interlayer insulation 309 Second interlayer insulation 310 Contact Hole No. 2 311 3rd layer wiring 312 Third layer insulation 313 4th layer insulation 314 3rd Contact Hole 315 Reflective electrode layer 316 Bulkhead 317 Emitting layer 318 Transparent electrode layer 319 Second Board 320 Light-shielding film 321 Color Filter 322 Overcoat film 323 Space 400 Tables 401 Case 402 Legs 403 Display section 404 Display button 405 Power Cord 410 Television Equipment 411 Case 412 Display section 413 Stand 414 Remote control device 415 Display section 416 Operation Key 420 Personal Computer 421 Case 422 Case 423 Display section 424 Keyboard 425 External connection port 426 Pointing Device 430 Mobile Phones 431 Case 432 Display section 433 Power Button 434 External connection port 435 Speaker 436 Mike 437 Operation Button N1 First node N2 Second node N3 Third node

Claims

1. A first gate signal line; A second gate signal line; A first wiring; a second wiring to which video data is supplied; A light-emitting element; a first transistor having a function of controlling a current flowing from the first wiring to the light-emitting element in response to the video data; in the pixel, the second wiring intersects with each of the first wiring, the first gate signal line, and the second gate signal line; a first conductive film having a function as the first wiring, a second conductive film having a function as the first gate signal line, and a third conductive film having a function as the second gate signal line each have a region in contact with an upper surface of one of the first insulating films; a fourth conductive film having a function as a gate electrode of the first transistor has a region in contact with an upper surface of one of the second insulating films; the fifth conductive film having a function as the second wiring has a region in contact with an upper surface of one of the third insulating films; Light emitting device.

2. In claim 1, the first wiring, the first gate signal line, and the second gate signal line have regions extending in the same direction; Light emitting device.

3. In claim 1 or 2, A second transistor is provided in the pixel; the first gate signal line is electrically connected to a gate electrode of the second transistor; a sixth conductive film having a function as a gate electrode of the second transistor has a region in contact with an upper surface of the one second insulating film; Light emitting device.

4. In any one of claims 1 to 3, A third transistor is provided in the pixel; the second gate signal line is electrically connected to a gate electrode of the third transistor; a seventh conductive film having a function as a gate electrode of the third transistor has a region in contact with an upper surface of the one second insulating film; Light emitting device.

Images