Display device

Abstract

To provide a novel light-emitting device or light-emitting panel in which reflection of external light is suppressed, or a novel display panel in which reflection of external light is suppressed.SOLUTION: A light-emitting device includes a light-emitting module emitting light with a spectrum with a peak at one wavelength in a visible light region, and an absorption layer that absorbs part of light with a shorter wavelength than the one wavelength and part of light with a longer wavelength than the one wavelength more than light with the one wavelength.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an article, a method, or a manufacturing method. , manufacture, or composition of matter. The present invention relates to, for example, a semiconductor device, a display device, a light-emitting device, a power storage device, and a driving method thereof. In particular, the present invention relates to a light emitting device, a light emitting panel, or a display. Regarding the panel. [Background technology]

[0002] A first electrode is provided on a first substrate, and a light-emitting organic compound is provided between the first electrode. a second electrode sandwiching the layer containing the insulating layer; and a sacrificial layer formed of a liquid material on the second electrode; between a first substrate and a second substrate is known (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-38069 A Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present invention provides a novel light-emitting device or light-emitting panel in which reflection of external light is suppressed. Another object of the present invention is to provide a novel display panel in which reflection of external light is suppressed. One of the challenges we face is to:

[0005] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0006] One aspect of the present invention is a semiconductor device including an absorber layer, a conductive film overlapping the absorber layer, and a light emitting layer electrically connected to the conductive film. The conductive film reflects visible light and the light emitting module The module emits light with a spectrum having a maximum at one wavelength in the visible light range toward the absorbing layer. The absorbing layer also absorbs a portion of the light having a wavelength shorter than the first wavelength and a portion of the light having a wavelength longer than the first wavelength. A portion of light having one wavelength is absorbed by the other.

[0007] In addition, one embodiment of the present invention is a semiconductor device including an absorber layer, a first conductive film and a second conductive film overlapping the absorber layer, a first light emitting module electrically connected to the first conductive film; and a second light emitting module electrically connected to the second conductive film. and a second light emitting module connected to the first conductive film. The second conductive film reflects visible light. The first light emitting module also reflects a first light in the visible light range. The second light emitting module emits light having a spectrum with a maximum at the wavelength of the first light emitting module toward the absorption layer. The light absorbing layer has a spectrum having a maximum at a second wavelength different from a first wavelength in the visible light region. The absorbing layer also absorbs a portion of the light having a wavelength shorter than the first wavelength and a portion of the light having a wavelength shorter than the first wavelength. A part of the light having a wavelength longer than the first wavelength is absorbed from the light having the first wavelength, and a portion of light having a wavelength shorter than the first wavelength and a portion of light having a wavelength longer than the second wavelength , and absorbs light having a second wavelength.

[0008] The light-emitting panel according to one aspect of the present invention has a spectrum having a maximum at one wavelength in the visible light region. A light emitting module that emits light, a portion of the light having a wavelength shorter than the one wavelength, and the one The light absorbing layer absorbs a portion of light having a wavelength longer than the wavelength of the light having the wavelength. do.

[0009] This allows a portion of the external light that travels from the outside of the light-emitting panel through the absorption layer toward the reflective conductive film to be absorbed. The light can be absorbed by an absorbing layer before it reaches the reflective conductive film. A part of the light reflected by the conductive film is absorbed by the absorption layer before being emitted from the absorption layer. In addition, the intensity of external light reflected by the reflective conductive film can be reduced.

[0010] As a result, the user of the light emitting device cannot distinguish between reflected external light and the light emitted by the light emitting module. This can make it difficult for the phenomenon of the ink becoming thinner to occur.

[0011] Another embodiment of the present invention is a semiconductor device including a first conductive film, a second conductive film, a third conductive film, and a first conductive film overlapping with the absorber layer. A first light emitting module electrically connected to the first conductive film and a second light emitting module electrically connected to the second conductive film. a second light emitting module electrically connected to the third conductive film; and a third light emitting module electrically connected to the third conductive film. The first conductive film, the second conductive film, and the third conductive film are configured to transmit visible light. The first light emitting module also has a spectrum having a maximum at a first wavelength in the visible light region. the second light-emitting module emits light of a first wavelength in the visible light region toward the absorbing layer; and emitting light having a spectrum with a maximum at a second wavelength different from the second wavelength toward the absorbing layer, thereby generating a third emission The module has a maximum at a third wavelength different from the first and second wavelengths in the visible light region. The light having a spectrum that is shorter than the first wavelength is emitted toward the absorbing layer. A portion of the light having a wavelength longer than the first wavelength is divided into a portion of the light having a first wavelength and a portion of the light having a wavelength longer than the first wavelength. and absorbing a portion of the light having a wavelength shorter than the first wavelength and a portion of the light having a wavelength shorter than the second wavelength. A portion of the light having a longer wavelength is absorbed by the light having a second wavelength and a portion of the light having a shorter wavelength is absorbed by the light having a third wavelength. A part of the light having a wavelength longer than the third wavelength is divided into a part of the light having a wavelength shorter than the third wavelength and a part of the light having a wavelength longer than the third wavelength. The display panel absorbs light from the source.

[0012] In addition, one aspect of the present invention is a method for manufacturing a semiconductor device, comprising: a display panel as described above, wherein the portion absorbs light having a first wavelength and light having a second wavelength. It is.

[0013] The display panel according to the aspect of the present invention detects a part of light having a wavelength shorter than the first wavelength and a part of light having a wavelength shorter than the second wavelength. A part of light having a wavelength longer than the first wavelength is more easily absorbed than light having a first wavelength, and a part of light having a second wavelength is more easily absorbed than light having a first wavelength. a portion of light having a wavelength shorter than the first wavelength and a portion of light having a wavelength longer than the second wavelength , which is more easily absorbed than light having a second wavelength, and which absorbs a portion of the light between the first wavelength and the second wavelength, an absorbing layer that is more absorptive of light having one wavelength and more absorptive of light having a second wavelength; has.

[0014] As a result, the display contrast decreases in environments with strong external light. Alternatively, a novel display panel capable of suppressing the above-mentioned problem can be provided. The phenomenon occurs when the light reflected by the light-emitting modules installed in the regular structure interferes with each other. In order to prevent defects caused by interference (such as the phenomenon of patterns being observed due to interference fringes) It is possible to provide a novel display panel that can display images in a wide range of colors.

[0015] In addition, one aspect of the present invention is a method for detecting an intensity of a spectrum having a maximum at a first wavelength. The half-width of the spectrum is 15 nm or more and 35 nm or less, and the spectrum has a maximum at the second wavelength. The above display panel, in which the half-width of the intensity at the second wavelength of the tor is 15 nm or more and 95 nm or less. It's Nell.

[0016] In one aspect of the present invention, the first light emitting module and the second light emitting module are The display panel has the above structure.

[0017] The display panel according to one embodiment of the present invention includes a light-emitting module that emits visible light having a narrow half-width spectrum. This prevents the problem of the light emitted by the light-emitting module being absorbed by the absorption layer. As a result, the light emitted by the light-emitting module can be extracted efficiently. A novel display panel can be provided.

[0018] Furthermore, one embodiment of the present invention is a semiconductor device including a first conductive film and a first conductive film electrically connected to the first conductive film. The light-emitting modules are arranged repeatedly with a resolution of 200 ppi or more and 1000 ppi or less; The display panel shown above. Note that ppi (pixels per inch) is the number of pixels per pixel. It is a unit that expresses the frequency of occurrence of a pixel per inch. For example, if there are three subpixels in one pixel, When constructing a pixel, three subpixels are counted as one repeating unit.

[0019] The display panel according to one embodiment of the present invention includes light-emitting modules repeatedly arranged at a high spatial frequency. The conductive film electrically connected to the light emitting diode is provided with an absorption layer capable of absorbing light reflected by the conductive film. This not only enables high-definition, high-quality images to be displayed, but also ensures that the light reflected by the conductive film is uniform. As a result, the inconvenience caused by the interference phenomenon can be reduced. To provide a novel display panel capable of reducing unwanted light (e.g., patterns due to interference fringes). It is possible.

[0020] In another embodiment of the present invention, the absorption layer is The display panel is in contact with the substrate and has a refractive index of 1.4 or more and 2.0 or less.

[0021] This allows the light emitted by the light emitting module to efficiently penetrate into the absorption layer. It is therefore possible to provide a novel display panel capable of efficiently extracting light emitted by a laser diode. can.

[0022] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, the light-emitting layer containing an organic compound, which is a light-emitting material, sandwiched between the electrodes is one of the EL layers. This is an embodiment.

[0023] In addition, in the present specification, when a substance A is dispersed in a matrix made of another substance B, The substance B that constitutes the trix is ​​called the host material, and the substance A that is dispersed in the matrix is ​​called the guest material. In addition, each of Substance A and Substance B may be a single substance. It may be a mixture of two or more substances.

[0024] In this specification, the term "light emitting device" refers to an image display device or a light source (including a lighting device). ) Also, when a connector is attached to a light-emitting device, such as an FPC (Flexible Print Circuit) ed circuit) or TCP (Tape Carrier Package) modules with a printed wiring board at the end of the TCP, or a substrate on which a light emitting element is formed, and an IC is attached by the COG (Chip On Glass) method. Modules in which an integrated circuit is directly mounted are also included in the light emitting device. Effect of the Invention

[0025] According to one aspect of the present invention, there is provided a novel light emitting device or light emitting panel in which reflection of external light is suppressed. Alternatively, a novel display panel in which reflection of external light is suppressed can be provided. [Brief description of the drawings]

[0026] [Figure 1] 1A to 1C are diagrams illustrating a light-emitting device according to an embodiment. [Diagram 2] 1A to 1C are diagrams illustrating a display panel according to an embodiment. [Diagram 3] 1A to 1C are diagrams illustrating a display panel according to an embodiment. [Figure 4] 3A to 3C illustrate pixels of a display panel according to an embodiment. [Diagram 5] 1A to 1C are diagrams illustrating light-emitting elements that can be applied to a light-emitting device and a display panel according to an embodiment. [Figure 6] 1A to 1C are diagrams illustrating electronic devices according to an embodiment. [Figure 7] 4A to 4C are diagrams illustrating an absorption spectrum of an absorption layer and an emission spectrum of a light-emitting module according to an embodiment. [Figure 8] 4 is a photograph of light reflected by a display panel according to an embodiment. [Figure 9] 3A to 3C are diagrams illustrating a method for producing an absorbing layer and a method for evaluating reflection of external light according to an embodiment. [Figure 10] 1A to 1C are diagrams illustrating the structure of a light-emitting element according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] <Examples of problems that can be solved by one embodiment of the present invention> Light-emitting module having a light-emitting element and an optical element, a light-emitting device having the light-emitting module, and A display panel having a plurality of light emitting modules is known. The light emitting module includes a conductive film capable of supplying signals and power for driving the light emitting module.

[0028] Metals have a lower electrical resistance than other materials, which allows them to transmit signals and power to the light-emitting module. By using metal for the wiring that supplies light, it is possible to reduce unevenness in brightness and power consumption of the light-emitting device.

[0029] In addition, when a metal is used for the conductive film, the conductive film can remarkably absorb light from the outside of the light emitting device toward the conductive film. This allows the user of the light emitting device to distinguish between the reflected external light and the light emitted by the light emitting module. A malfunction occurs where it becomes impossible to distinguish between the two.

[0030] For example, when the display panel is used in an environment with strong external light, the image displayed on the display panel The above-mentioned phenomenon causes a problem in that the display contrast is reduced.

[0031] Moreover, a display panel using the light emitting device includes a light emitting module in each subpixel. The sub-pixels are arranged regularly. The structures arranged regularly, such as the sub-pixels, are reflective. The light that passes through the lens interferes with each other. This prevents the observation of disturbing light (e.g., patterns caused by interference fringes). This can cause problems such as the data being lost.

[0032] <One aspect of the present invention> In the embodiment described below, the wavelength of light entering the light emitting device from the outside and the wavelength of the light emitted from the light emitting device are One aspect of the present invention is created by focusing on the wavelength of light emitted by an optical device.

[0033] The light emitting device according to one embodiment of the present invention emits light having a spectrum with a maximum at one wavelength in the visible light region. a light emitting module that emits a light having a wavelength shorter than the first wavelength and a light having a wavelength shorter than the first wavelength The light emitting device has an absorption layer that absorbs a portion of light having a longer wavelength than the light having the one wavelength.

[0034] This allows a portion of the external light traveling from the outside of the light emitting device through the absorption layer toward the reflective conductive film to be The light can be absorbed by an absorbing layer before it reaches the conductive film. A part of the light can be absorbed by the absorption layer before being emitted from the absorption layer to the outside of the light emitting device. Moreover, the intensity of external light reflected by the reflective conductive film can be reduced.

[0035] As a result, the user of the light emitting device cannot distinguish between reflected external light and the light emitted by the light emitting module. This can make it difficult for the phenomenon of the ink becoming thinner to occur.

[0036] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The present invention should not be construed as being limited to the contents described below. The same reference numerals are used in different drawings to indicate the same parts or parts having similar functions. A repeated explanation will be omitted.

[0037] (Embodiment 1) In this embodiment, a structure of a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS. This will be explained with reference to 1(A-2).

[0038] FIG. 1(A-1) is a schematic cross-sectional view of a light-emitting device 100 according to one embodiment of the present invention. The absorption spectrum of the absorption layer 160 included in the light-emitting device 100 according to one embodiment of the present invention and the first The emission spectrum of the light-emitting module 180R. The horizontal axis of FIG. 1(A-2) represents the wavelength of light, The left vertical axis represents absorption (also called extinction rate), and the right vertical axis represents the relative intensity of light.

[0039] The light emitting device described in this embodiment includes an absorption layer 160 and a first conductive layer on which the absorption layer 160 overlaps. a first light-emitting module 180 electrically connected to the first conductive film 125R; R (see FIG. 1(A-1)). The first light emitting module 180R is shown in the figure. The light is emitted in the direction of the arrow R shown in FIG. The trajectory of light reflected by film 125R is shown diagrammatically using solid and dashed arrows.

[0040] The first conductive film 125R reflects visible light.

[0041] The first light emitting module 180R has a spectrum having a maximum at a wavelength λ(R) in the visible light region. The light of 180Em(R) is emitted toward the absorption layer 160. R) is shown by the dashed line in Figure 1 (A-2).

[0042] The absorbing layer 160 absorbs a portion of the light having a wavelength shorter than the wavelength λ(R) and a portion of the light having a wavelength longer than the wavelength λ(R). The light with wavelength λ(R) absorbs a portion of the light with a wavelength shorter than the wavelength of the light with wavelength λ(R).

[0043] For example, the absorption spectrum 160Abs of the absorbing layer 160 is s(R) and has an absorption A greater than Abs(R) at wavelengths shorter than λ(R). bs(1). Also, at wavelengths longer than λ(R), the absorption is greater than Abs(R). It has high absorption Abs(2).

[0044] As a result, light can pass through the absorbing layer 160 from the outside of the light emitting device 100 to the reflective first conductive film 12 A part of the external light 11 heading toward the first conductive film 125R is absorbed by the absorption layer 160 before reaching the first conductive film 125R. In addition, a part of the light reflected by the first conductive film 125R can be absorbed by the absorbing layer. The light can be absorbed by the absorption layer 160 before being emitted from the light emitting device 100 to the outside. Then, the external light 1 that is reflected by the first conductive film 125R and emitted to the outside can be 1 can reduce the intensity of light coming from the

[0045] The absorption layer 160 absorbs light having a wavelength λ(R) and a portion of light having a wavelength shorter than λ(R). It is easier for light to pass through the nucleus than the part of the light that has a wavelength longer than λ(R). Then, the absorption layer 160 absorbs light having a wavelength λ(R) emitted by the first light emitting module 180R. is difficult to absorb.

[0046] As a result, the user of the light emitting device can see the reflected external light 11 and the first light emitting module 180R. This can make it difficult for the phenomenon to occur in which emitted light becomes indistinguishable.

[0047] The light emitting device 100 described as an example in this embodiment includes a substrate 110 and a A first light emitting module 180 is disposed between the substrate 110 and the opposing substrate 170. R and the absorption layer 160, and wiring for supplying power to the first light emitting module 180R. The first light emitting module 180R and the wiring are provided on the substrate 110. The layer 160 is disposed between the first light emitting module 180R and the counter substrate 170.

[0048] Hereinafter, each element constituting the light emitting device 100 according to one embodiment of the present invention will be described.

[0049] <Light-emitting module> The first light emitting module 180R includes a light emitting element and an optical element. The light-emitting elements include light-emitting diodes, electroluminescent elements, and various other light-emitting devices. The element can be used.

[0050] For example, the light emitting element exemplified in this embodiment has a lower electrode 151R, and a layer 152 containing a light-emitting organic compound sandwiched between the upper and lower electrodes. Equipped with 53.

[0051] The lower electrode 151R is provided so as to overlap the reflective conductive film 125R. In other words, the reflective conductive film 125R is electrically connected to the lower It has a portion overlapping the electrode 151R and a portion electrically connected to the lower electrode 151R. The portion of the reflective conductive film 125R that overlaps with the lower electrode 151R is the first light emitting module. The upper electrode 180R includes the reflective conductive film 125R, and the other part of the reflective conductive film 125R includes the wiring. 152 is electrically connected to other wiring (not shown) through a connecting portion (not shown). The light emitting element is supplied with power from the conductive film 125R and other wiring not shown.

[0052] Note that an example of a light-emitting element that can be applied to the light-emitting device illustrated in this embodiment will be described in detail in Embodiment 3. I will explain in detail.

[0053] In addition, an optical element can be provided on the light emitting element. The following can be given as examples.

[0054] For example, a microcavity is constructed using a semi-transmissive / semi-reflective conductive film and a reflective conductive film. A light emitting module can be constructed by forming a light emitting element between the lower electrodes. The electrode 151R is formed by overlapping the reflective conductive film 125R using a conductive film having light transmitting properties. The upper electrode 152 is formed using a semi-transmissive and semi-reflective conductive film.

[0055] The thickness of the lower electrode 151R is used to determine the semi-transmissive and semi-reflective conductive film and the reflective By adjusting the spacing between the microresonators, the distance between the conductive films can be adjusted. The wavelength of the extracted light can be adjusted. Also, by using a microresonator, A narrow spectrum of light can be extracted from the light emitting module.

[0056] "substrate" The substrate that can be used for the substrate 110 must have a heat resistance and a manufacturing resistance sufficient to withstand the manufacturing process. The thickness and size are suitable for the device, and the device prevents unintended diffusion of impurities into the light-emitting element. There is no particular limitation as long as it is something.

[0057] The substrate in which the diffusion of unintended impurities is suppressed to such an extent that it can be used as a substrate is The gas barrier properties determined according to the light emitting device to be used can be used as an index for selection. Specifically, when an organic electroluminescence element is used as a light-emitting element, Air permeability is 10 -5 g / m 2 ·day or less, preferably 10 -6 g / m 2 ·day or less A substrate in which

[0058] The structures that can be used for the substrate include a single layer structure, a laminate structure, or a fibrous or particulate material. For example, a film having a thickness of 1 μm or more and less than 200 μm may have a composite structure containing the film. Examples of the structure include a film-like structure and a plate-like structure with a thickness of 0.1 mm or more.

[0059] The substrate, whose linear expansion coefficient is suppressed to such an extent that it can be used as a substrate, is used not only in a laminated state but also in a laminated state. The thickness is selected according to the difference in the linear expansion coefficient between the layers, the heat applied during the manufacturing process, and the allowable curl. Specifically, the linear expansion coefficient range is 1×10 -3 / K or less, preferably 5×1 0 -5 / K or less, more preferably 1×10 -5 / K or less can be used. .

[0060] Materials that can be used for the substrate include, for example, glass, ceramics, metals, inorganic materials, and or resin.

[0061] The glass may be, specifically, non-alkali glass, soda-lime glass, potash glass, or Crystal glass or the like can be used.

[0062] The metal may be SUS or aluminum. By forming it on a metal surface, the metal surface can be made insulating.

[0063] As the inorganic material, for example, a metal oxide, a metal nitride, or a metal oxynitride can be used. Specifically, silicon oxide, silicon nitride, silicon oxynitride, alumina, etc. can be used.

[0064] Resins include polyester, polyolefin, polyamide, polyimide, and polycarbonate. For example, a resin such as acrylate or acrylic resin can be used.

[0065] The substrate 110 exemplified in this embodiment is a light-emitting element including a base material 110b and unintentional impurities. Specifically, the substrate 110b is a glass substrate. The barrier film 110a is an inorganic film containing silicon and nitrogen.

[0066] <<Opposite substrate>> The substrate applicable to the counter substrate 170 may be the same as the substrate 110 as long as it has light-transmitting properties. A substrate can be used.

[0067] The structures that can be used on the surface of the opposing substrate 170 include microlenses and uneven structures. These structures include embossing, vacuum molding, blast processing, and frost processing. Alternatively, a film or the like having a concave and convex shape may be laminated. A substrate having a SiO 2 film may also be used.

[0068] By providing these structures on the light emitting element side of the opposing substrate 170, the light emitted by the light emitting element is These structures can enter the opposing substrate 170 at various angles. By providing the light-emitting element on the light-extracting side of the counter substrate 170, the light emitted by the light-emitting element is reflected by the counter substrate 170. This allows the light to be reflected from the surface at various angles. As a result, it becomes difficult to improve the efficiency of extracting light emitted by the light emitting element to the outside. can be done.

[0069] The counter substrate 170 exemplified in this embodiment is a non-alkali glass substrate.

[0070] Absorption Layer The absorbing layer 160 is a layer containing a dye. The dye absorbs at least a portion of visible light. For example, For example, a metal complex dye or an organic dye can be used.

[0071] Specifically, porphyrin-based dyes, chlorophyll-based dyes, phthalocyanine-based dyes, naphtha Cyanine dyes, monomethine dyes, polymethine dyes, cyanine dyes, hemicyanine dyes dyes, streptocyanine dyes, merocyanine dyes, rhodacyanine dyes, oxocyanine dyes, Sonol dyes, polyene dyes, styryl dyes, stilbene dyes, azine dyes, Oxazine dyes, thiazine dyes, azomethine dyes, azo dyes, triphenylmeth Pyronine dyes, pyronine dyes, fluorescein dyes, rhodamine dyes, uranine dyes dyes, eosin dyes, erythrosine dyes, rose bengal dyes, mercurochrome dyes Dyes, acridine dyes, naphthoquinone dyes, anthraquinone dyes, coumarin dyes , Diketopyrrolopyrrole dyes, Indigo dyes, Thioindigo dyes, Quinacridone dyes Dyes, squarylium dyes, croconium dyes, anthracene dyes, perylene dyes Pyrene dyes, pyrylium dyes, benzopyran dyes, perimidine dyes, kinoki Sarin dyes, naphthalimide dyes, deazaflavin dyes, mauve dyes, fulgide dyes system dyes, procion system dyes, benzodifuranone system dyes, xanthene system dyes, triphenyl Methane dyes, fluoran dyes, quinophthalone dyes, naphtholactam dyes, imidazolidinyl dyes, azole azo dyes, tricyanostyryl dyes, benzothiazole azo dyes, benzene Azo dyes, pyrazolotriazole dyes, isothiazole azo dyes and pyrazolones Azomethine dyes and the like can be given as examples of metal complex dyes or organic dyes. .

[0072] The absorbent layer 160 may also include an adhesive. Substrate 170 can be laminated to substrate 110 .

[0073] The adhesive may be a resin, such as polyester, polyolefin, Polyamide, polyimide, polycarbonate, epoxy resin, acrylic resin, etc. One example of the resin is mentioned.

[0074] The absorbing layer 160 also has a higher refractive index than air, particularly a refractive index between 1.4 and 2.0. In this way, the absorption layer 160 also functions as an optical bonding layer, and the light emitting module The emitted light can efficiently enter the absorbing layer 160 .

[0075] <Modification> Regarding the modified example of the light emitting device exemplified in this embodiment, FIG. 1(B-1) and FIG. ) will be referred to for explanation.

[0076] FIG. 1(B-1) is a schematic cross-sectional view of a light-emitting panel 100B according to one embodiment of the present invention. 2) is the absorption spectrum of the absorption layer 160 included in the light-emitting panel 100B according to one embodiment of the present invention. and the emission spectrum of the light-emitting module.

[0077] The light-emitting panel 100B illustrated in the modification of the present embodiment has a feature of including a plurality of light-emitting modules. However, unlike the light emitting device 100 described with reference to FIG. 1(A-1) and FIG. 1(A-2), Therefore, the different parts will be described in detail here, and similar configurations can be used. The explanation given with reference to Figs. 1(A-1) and 1(A-2) is incorporated herein by reference.

[0078] The light-emitting panel 100B described as an example of a modification of the present embodiment includes an absorption layer 160 and an absorption The layer 160 overlaps the first conductive film 125R and the second conductive film 125G, and the first conductive film 1 25R, and the first light emitting module 180R and the second conductive film 125G and a second light emitting module 180G electrically connected to the first light emitting module 180G (see FIG. 1(B-1)). ).

[0079] The first conductive film 125R and the second conductive film 125G reflect visible light.

[0080] The first light emitting module 180R has a spectrum having a maximum at a first wavelength λ(R) in the visible light region. The second light emitting module emits light of a wavelength of 180Em (R) toward the absorption layer 160. The 180G-type IR laser has a maximum at a second wavelength λ(G) different from a first wavelength λ(R) in the visible light region. The light having a spectrum 180Em(G) is emitted toward the absorbing layer 160.

[0081] The absorbing layer 160 absorbs a portion of the light having a wavelength shorter than the first wavelength λ(R) and a portion of the light having a wavelength shorter than the first wavelength λ (R) absorbs a portion of the light having a first wavelength λ(R).

[0082] In addition, the absorbing layer 160 absorbs a portion of the light having a wavelength shorter than the second wavelength λ(G) and a portion of the light having a wavelength shorter than the second wavelength λ(G). A part of the light having a wavelength longer than the wavelength λ(G) is absorbed by the light having a second wavelength λ(G). do.

[0083] For example, the absorption spectrum 160Abs of the absorbing layer 160 is s(R) and has an absorption A greater than Abs(R) at wavelengths shorter than λ(R). bs(4). Also, at wavelengths longer than λ(R), the absorption is greater than Abs(R). It has high absorption Abs(5).

[0084] In addition, the absorption Abs(G) at the wavelength λ(G) is Abs(3) is greater than Abs(G) at wavelength λ(G). It has an absorption Abs(5) that is greater than the absorption Abs(G) at the wavelength.

[0085] The light-emitting panel 100B illustrated in the modification of the present embodiment has a first wavelength λ(R A first light emitting module 18 emitting light having a spectrum 180Em(R) with a maximum at 0R and a spectrum with a maximum at a second wavelength λ(G) in the visible light region, 180Em(G). A second light emitting module 180G that emits light and a second light emitting module 180G that emits light having a wavelength shorter than the first wavelength λ(R). A portion of the light having a wavelength longer than the first wavelength λ(R) is divided into a portion of the light having a wavelength longer than the first wavelength λ(R ) and absorbs a portion of the light having a wavelength shorter than the second wavelength λ(G) and a portion of the light having a wavelength shorter than the second wavelength λ(G). A part of the light having a wavelength longer than the wavelength λ(G) is absorbed by the light having a second wavelength λ(G). The insulating layer 160 is made of a reflective material.

[0086] As a result, light passes through the absorption layer 160 from the outside of the light-emitting panel 100B to the reflective first conductive film A part of the external light 11 directed toward the first conductive film 125R or the second conductive film 125G is reflected by the first conductive film 125R. Alternatively, the light can be absorbed using the absorption layer 160 before reaching the second conductive film 125G. In addition, a part of the light reflected by the first conductive film 125R or the second conductive film 125G is absorbed. The light is absorbed by the absorption layer 160 before being emitted from the layer 160 to the outside of the light-emitting panel 100B. In addition, the first conductive film 125R or the second conductive film 125G can be reflected. This makes it possible to reduce the intensity of light originating from external light 11 that is emitted to the outside.

[0087] The absorption layer 160 absorbs light having a wavelength λ(R) and a portion of light having a wavelength shorter than λ(R). It is easier for light with wavelengths longer than λ(R) to penetrate through the glass. The absorption layer 160 absorbs light having a wavelength λ(G) from a portion of light having a wavelength shorter than λ(G). It is easier for light with wavelengths longer than λ(G) to pass through the glass. The absorption layer 160 absorbs the light having a wavelength λ(R) emitted by the first light emitting module 180R. and is less likely to absorb light having a wavelength λ(G) emitted by the second light emitting module 180G. stomach.

[0088] As a result, the light from the light-emitting panel 100B is determined to be either due to reflection of the external light 11 or due to the first light emission. Distinguish whether the light is from the light emission of the second light-emitting module 180R or the light emission of the second light-emitting module 180G This can make it difficult for the phenomenon of being unable to be performed to occur.

[0089] In addition, the light-emitting panel 100B described as an example of a modification of the present embodiment includes a first light-emitting module. The first light emitting module 180R and the second light emitting module 180G are provided on the substrate 110. has the same configuration as the light emitting device 100 exemplified in this embodiment.

[0090] The following describes the components constituting light-emitting panel 100B, which will be described as an example of a modification of the present embodiment. Among them, those that are not included in the light emitting device 100 will be described.

[0091] <Light-emitting module> The second light emitting module 180G is a light emitting module having a spectrum of light emitted by the first light emitting module 180R. The device emits light with a different spectrum, 180Em(G), than 180Em(R).

[0092] For example, the first light emitting module 180R and the second light emitting module 180G both emit light. It is equipped with optical elements and photonic elements, specifically, organic electroluminescence elements and microresonators. In particular, the organic electroluminescence device emits light including red light and green light. Both devices are equipped with a sensing element.

[0093] The thickness of the first lower electrode 151R is set to be equal to the thickness of the first light emitting module 180R. The spectrum has a maximum at the first wavelength λ(R) and is 180Em(R). has been adjusted to.

[0094] The thickness of the second lower electrode 151G is set to a value that is in accordance with the spread of the light emitted by the second light emitting module 180G. The spectrum becomes 180Em(G) with a maximum at the second wavelength λ(G). It has been adjusted.

[0095] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0096] (Embodiment 2) In this embodiment, a structure of a display panel according to one embodiment of the present invention will be described with reference to FIGS. He explains as he goes.

[0097] FIG. 2A is a top view illustrating a structure of a display panel that can be used for a display panel of one embodiment of the present invention. FIG.

[0098] FIG. 2B is a cross-sectional view taken along line AB and line CD in FIG. 2A.

[0099] FIG. 2C is a cross-sectional view taken along line EF in FIG. 2A.

[0100] The display panel 200 of one embodiment of the present invention described in this embodiment (see FIG. 2C) has an absorption layer 260, a first conductive film 225R overlaid by the absorbing layer 260, a second conductive film 225G, and The third conductive film 225B and the first light emitting module electrically connected to the first conductive film 225R. The second light emitting module 280R is electrically connected to the second conductive film 225G. a third light emitting module 280B electrically connected to the third conductive film 225B; and has.

[0101] The first conductive film 225R, the second conductive film 225G, and the third conductive film 225B reflect visible light. Shoot.

[0102] The first light emitting module 280R has a spectrum having a maximum at a first wavelength λ(R) in the visible light region. The light of the spectrum 280Em(R) is emitted toward the absorption layer 260 (see FIG. 3).

[0103] The second light emitting module 280G has a spectrum having a maximum at a second wavelength λ(G) in the visible light region. The light of the spectrum 280Em (G) is emitted toward the absorbing layer 260.

[0104] The third light emitting module 280B has a spectrum having a maximum at a third wavelength λ(B) in the visible light region. The light of spectrum 280Em (B) is emitted toward the absorbing layer 260.

[0105] The absorbing layer 260 absorbs a portion of the light having a wavelength shorter than the first wavelength λ(R) and a portion of the light having a wavelength shorter than the first wavelength λ (R) absorbs a portion of the light having a first wavelength λ(R). In other words, the absorbing layer 260 has an absorption at a first wavelength λ(R) greater than Abs(R). The absorption is on the shorter and longer wavelength sides than the first wavelength λ(R).

[0106] The absorbing layer 260 also absorbs a portion of the light having a wavelength shorter than the second wavelength λ(G) and a portion of the light having a wavelength shorter than the second wavelength λ(G). A part of the light having a wavelength longer than the wavelength λ(G) is absorbed by the light having a second wavelength λ(G). In other words, the absorbing layer 260 has an absorption Abs(G) at the second wavelength λ(G). It has large absorption on the shorter and longer wavelength sides than the second wavelength λ(G).

[0107] The absorbing layer 260 also absorbs a portion of the light having a wavelength shorter than the third wavelength λ(B) and a portion of the light having a wavelength shorter than the third wavelength λ(B). A part of the light having a wavelength longer than λ(B) is absorbed by the light having a third wavelength λ(B). In other words, the absorbing layer 260 has an absorption Abs(B) at the third wavelength λ(B). It has large absorption on the shorter and longer wavelength sides than the third wavelength λ(B).

[0108] For example, the absorption spectrum 260Abs of the absorbing layer 260 is s(R) and has an absorption greater than Abs(R) at wavelengths shorter than λ(R). and has an absorption greater than Abs(R) at wavelengths longer than λ(R). In addition, the absorption spectrum 260Abs of the absorbing layer 260 is the absorption Abs( G), and has an absorption greater than the absorption Abs(G) at a wavelength shorter than λ(G). , has an absorption greater than absorption Abs(G) at wavelengths longer than λ(G). The absorption spectrum 260Abs of the absorbing layer 260 is the absorption Abs(B) at wavelength λ(B). and has an absorption greater than absorption Abs(B) at a wavelength shorter than wavelength λ(B), It has absorption greater than absorption Abs(B) at wavelengths longer than long λ(B).

[0109] In addition, the display panel 200 according to one embodiment of the present invention described in this embodiment (see FIG. 3) has an absorption Layer 260 filters a portion of the light having a wavelength between the second wavelength λ(G) and the third wavelength λ(B) into It absorbs light having a second wavelength λ(G) and light having a third wavelength λ(B).

[0110] The display panel 200 according to one embodiment of the present invention described in this embodiment has a second wavelength λ(G) A part of the light having a shorter wavelength and a part of the light having a wavelength longer than the second wavelength λ(G) are It is more easily absorbed than light having the second wavelength λ(G) and has a wavelength shorter than the third wavelength λ(B). A portion of the light having a wavelength longer than the third wavelength λ(B) is divided into a portion of the light having a third wavelength λ(B) and absorbs a portion of the light between the second wavelength λ(G) and the third wavelength λ(B). It is more easily absorbed than light having a second wavelength λ(G) and more easily absorbed than light having a third wavelength λ(B). It has an absorbent layer that is easy to absorb.

[0111] As a result, light passes through the absorption layer 260 from the outside of the display panel 200 to the reflective first conductive film 2 25R, the outer surface toward the reflective second conductive film 225G or the reflective third conductive film 225B. A portion of the light 11 can be absorbed using an absorption layer 260 before it reaches the respective conductive film. In addition, a part of the light reflected by each conductive film is diverted from the absorption layer 260 to the display panel 2. The absorbent layer 260 can be used to absorb the liquid before it is ejected outside the device. The intensity of light originating from external light 11 that is reflected by at least one conductive film and emitted to the outside. can be reduced.

[0112] As a result, the display contrast decreases in environments with strong external light. Alternatively, a novel display panel capable of suppressing the above-mentioned problem can be provided. The phenomenon occurs when the light reflected by the light-emitting modules installed in the regular structure interferes with each other. In order to prevent defects caused by interference (such as the phenomenon of patterns being observed due to interference fringes) It is possible to provide a novel display panel that can display images in a wide range of colors.

[0113] Note that the subpixel 202 included in the display panel 200 of one embodiment of the present invention described in this embodiment R is a spectrum in which the half-width of the intensity at the first wavelength λ(R) is 35 nm or more and 95 nm or less. The first light emitting module 280R emits light of a vector 280Em(R) (see FIG. 3). In addition, the subpixel 202G has an intensity half-width of 25 nm or less at the second wavelength λ(G). A second light-emitting module that emits light in the spectrum 280Em(G), which is 35 nm or less above 280G. The subpixel 202B has a half-width of the intensity at the third wavelength λ(B). The third emitter emits light of spectrum 280Em(B) with a wavelength of 15 nm or more and 30 nm or less. It includes an optical module 280B.

[0114] The display panel 200 according to one embodiment of the present invention described in this embodiment has a narrow half-value width of the intensity. The first light-emitting module 2 is provided with a light-emitting module that emits visible light of a wavelength of 1000 nm. 80R, the light emitted by the second light emitting module 280G and the third light emitting module 280B. The phenomenon that the light is absorbed by the absorption layer 260 can be reduced. This makes it possible to provide a novel display panel capable of efficiently extracting light emitted by the display device. .

[0115] Note that the display panel 200 according to one embodiment of the present invention described in this embodiment includes a first light-emitting module. The first light emitting module 280R, the second light emitting module 280G, and the third light emitting module 280B are Both have a microcavity structure.

[0116] As a result, the first light emitting module 280R, the second light emitting module 280G, and the third light emitting module 280R are It is possible to narrow the half-value width of the intensity of the light emitted by the light emitting module 280B. Light with a narrowed half-width exhibits vivid colors. When such light is used for display, the display It can be made vivid.

[0117] Note that the display panel 200 according to one embodiment of the present invention described in this embodiment has a first conductive film 22 5R and a first light emitting module 280R electrically connected to the first conductive film 225R. It is repeated at a resolution of 200 ppi or more and 1000 ppi or less.

[0118] The display panel 200 according to one embodiment of the present invention described in this embodiment repeats light at a high spatial frequency. and electrically connected to a light-emitting module (for example, the first light-emitting module 280R) that is to be arranged. An absorption layer capable of absorbing light reflected by a conductive film (for example, the first conductive film 225R) to be Equipped with 260.

[0119] This not only enables high-definition images to be displayed, but also reduces the distortion of images that are repeatedly arranged. The light reflected by the first conductive film 225R is weakened, and the phenomenon of mutual interference is less likely to occur. As a result, the annoying light caused by interference phenomena (e.g., interference fringes) can be eliminated. It is possible to provide a novel display panel capable of reducing the image distortion.

[0120] Note that the display panel 200 according to one embodiment of the present invention described in this embodiment includes a first light-emitting module. 280R, the second light emitting module 280G, and the third light emitting module 280B. and has an absorbing layer 260 with a refractive index of 1.4 or more and 2.0 or less.

[0121] As a result, for example, the light emitted by the first light emitting module 280R is efficiently absorbed in the absorption layer 260. As a result, the light emitted by the first light emitting module 280R is efficiently extracted to the outside. It is possible to provide a novel display panel that can

[0122] The display panel 200 exemplified and described in this embodiment has the following configuration.

[0123] <Explanation of top view> A display panel 200 exemplified in this embodiment has a display area 201 (see FIG. 2A). .

[0124] A display area 201 is provided with a plurality of pixels 202, and each pixel 202 has a plurality of sub-pixels (e.g. For example, a sub-pixel 202R is provided. The sub-pixel includes a light emitting element and a driving element for driving the light emitting element. The pixel circuit is capable of supplying power to the pixel.

[0125] The light reflected by the light emitting module provided in the regular structure such as the subpixel is expressed as follows: They interfere with each other according to a formula.

[0126]

number

[0127] In formula (1), d is the interval between the regularly-spaced structures, and λ is the light irradiated onto the structures. is the wavelength of the reflected light, L is the distance to the position where the interference of the reflected light from the structure is observed, and D is the observed This is the spacing between interference fringes.

[0128] Interference fringes are observed when the light reflected by regularly-spaced structures interferes with each other. The period (D) of the structure increases as the frequency of structures increases (the smaller the value of d). For example, structures are regularly arranged at a frequency of 200 to 1,000 per inch. When the light is too bright, the light caused by interference (for example, patterns caused by interference fringes) becomes more noticeable, and the nuisance It becomes more and more unique.

[0129] The pixel circuit includes a wiring that can supply a selection signal and a wiring that can supply a data signal. The semiconductor device is electrically connected to a wiring that can be connected to the semiconductor device.

[0130] The display panel 200 also includes a scanning line driver circuit 203g that can supply a selection signal. The data line driver circuit 203s is capable of supplying a data signal.

[0131] <Explanation of the cross-sectional view> The display panel 200 includes a substrate 210 and an opposing substrate 270 opposed to the substrate 210 ( See Figure 2(B).

[0132] The substrate 210 is a flexible substrate 210b that prevents unintended diffusion of impurities into the light emitting element. A barrier film 210a and an adhesive layer 210 that bonds the barrier film 210a to the substrate 210b are formed. c) is a laminate.

[0133] The opposing substrate 270 is a flexible substrate 270b, which prevents unintended diffusion of impurities into the light emitting element. A barrier film 270a for preventing the above-mentioned phenomenon and an adhesive layer 2 for bonding the barrier film 270a to the substrate 270b are provided. It is a 70c laminate.

[0134] The absorption layer 260 serves as an optical bonding layer and a sealing material. The light passing through the substrate 270 can efficiently enter the absorption layer 260. Paste it onto 210.

[0135] The pixel circuit and the light emitting element (for example, the first light emitting element 250R) are disposed on the substrate 210 and the opposing substrate. Located between boards 270.

[0136] 《Pixel Structure》 The pixel 202 includes a subpixel 202R, a subpixel 202G, and a subpixel 202B (FIG. 2( Also, the sub-pixel 202R is composed of the first light-emitting module 280R and the first colored layer 26 7R, and the subpixel 202G includes a second light-emitting module 280G and a second color layer 267G. The subpixel 202B includes a third light-emitting module 280B and a third color layer 267B. .

[0137] For example, the subpixel 202R (see FIG. 2B) includes a first light-emitting element 250R and a first light-emitting element 250R. A pixel circuit including a transistor 202t capable of supplying power to a photoelement 250R is provided. In addition, the subpixel 202R includes a first light-emitting module 280R. The mold 280R includes a first light emitting element 250R and an optical element (eg, a microresonator).

[0138] The first light emitting module 280R (see FIG. 2C) includes a first conductive film 225R and a The first conductive film 225R is overlapped with a semi-transmissive and semi-reflective conductive film. The first light emitting element 250R is provided between the second light emitting element 225R and the semi-transmissive / semi-reflective conductive film. The upper electrode 252 of the first light emitting element 250R also serves as a semi-transmissive and semi-reflective conductive film.

[0139] The first conductive film 225R reflects the light emitted by the first light emitting element 250R and is semi-transparent. The semi-reflective upper electrode 252 reflects a portion of the light emitted by the first light emitting element 250R and transmits a portion of the light. In addition, a part of the light emitted by the first light emitting element 250R is efficiently extracted. In addition, the distance between the first conductive film 225R and the upper electrode 252 is adjusted. A microresonator is constructed.

[0140] The first light emitting element 250R includes a first lower electrode 251R, an upper electrode 252, and a lower electrode Between 251R and the upper electrode 252, there is a layer 253 containing a light-emitting organic compound.

[0141] The layer 253 containing a light-emitting organic compound includes a light-emitting unit 253a, a light-emitting unit 253b, and a light-emitting unit 253c. 3b and an intermediate layer 254 is provided between the light-emitting unit 253a and the light-emitting unit 253b.

[0142] The sub-pixel 202R (see FIG. 2C) has a first colored layer 267R disposed on the first substrate 270. In preparation for a position overlapping the light emitting module 280R, the subpixel 202G has a second colored layer 267G. is provided at a position overlapping the second light emitting module 280G of the counter substrate 270, and the sub-pixel 202B The third colored layer 267B is disposed on the opposing substrate 270 at a position where it overlaps with the third light emitting module 280B. As a result, for example, a part of the light emitted by the first light emitting module 280R is The light is then transmitted through the first colored layer 267R and emitted to the outside of the display panel 200 as indicated by the arrow in the figure. will be done.

[0143] The colored layer may transmit light having a specific wavelength, for example, red, green, or the like. , blue, magenta, yellow, cyan, or other light that selectively transmits the light. Alternatively, a region that transmits light emitted from the light emitting element may be provided.

[0144] <<Configuration of the Absorption Layer>> The absorbing layer 260 is a layer containing a dye. The dye absorbs at least a portion of visible light. For example, the same configuration as that of the absorption layer 160 described in the first embodiment is applied to the absorption layer 260. It is possible.

[0145] In particular, the peaks at different wavelengths (for example, the second wavelength λ(G) and the third wavelength λ(B)) are Spectra that can be obtained by combining the two spectra (e.g., spectrum 280Em(G) and spectrum 280Em(B)) Two light emitting modules (e.g., the second light emitting module 280G and the third light emitting module The part of the light with a wavelength between the two maxima of the 280B (Module 280B) is Preferably, the absorber layer 260 absorbs more light than the light having the wavelength of 100 nm.

[0146] By using a dye that absorbs a portion of visible light, or by using appropriately selected multiple dyes Such an absorbing layer 260 can be constructed by using a mixture of the following:

[0147] Additionally, the absorbing layer 260 bonds the counter substrate 270 to the substrate 210 .

[0148] The absorption layer 260 is connected to a light-emitting module (for example, the first light-emitting module 280R) and a coloring layer. (eg, first color layer 267R), absorbing layer 260 has a higher refractive index than air. For example, the absorbing layer 260 preferably has a refractive index greater than or equal to 1.4 and less than or equal to 2.0.

[0149] As a result, the absorption layer 260 also functions as an optical bonding layer, and the light emitted by the light emitting module is efficiently The absorbent layer 260 can be penetrated.

[0150] It should be noted that another layer having a higher refractive index than air is provided between the absorbing layer 260 and the light emitting element. Alternatively, another layer having a higher refractive index than air may be provided between the absorbing layer 260 and the colored layer. In addition, these layers preferably have a refractive index of 1.4 or more and 2.0 or less. It is nice.

[0151] Display Panel Configuration The display panel 200 has a light-shielding layer 267BM on the counter substrate 270. The light-shielding layer 267BM , the first colored layer 267R is provided so as to surround the colored layer (for example, the first colored layer 267R) (see FIG. 2(B)). ).

[0152] The display panel 200 includes an insulating film 221. The insulating film 221 covers the transistor 202t. Note that the insulating film 221 can be used to flatten unevenness caused by the pixel circuits. The insulating film 221 is a laminate of dense inorganic films (for example, films containing nitrogen and silicon). By using the layer film, the phenomenon of unintended impurities diffusing into the transistor 202t, etc. is suppressed. This can be done.

[0153] The display panel 200 has a light emitting element (for example, a first light emitting element 250R) disposed on an insulating film 221. do.

[0154] The display panel 200 includes a partition wall 22 on an insulating film 221, the partition wall 22 overlapping an end of the first lower electrode 251R. 8 (see FIG. 2(C)). In addition, A spacer 229 is provided on the bulkhead 228 .

[0155] Configuration of Data Line Driving Circuit The data line driving circuit 203s includes a transistor 203t and a capacitor 203c. The driver circuit and the pixel circuit can be formed on the same substrate and in the same process (see FIG. 2(B)). see).

[0156] Other configurations The display panel 200 includes wiring 211 through which a signal can be supplied, and a terminal 219 is 211. It is possible to supply signals such as data signals and sync signals. A flexible printed circuit (FPC) 209 is electrically connected to the terminal 219. is.

[0157] In addition, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this case is not only the light-emitting device itself, but also the FPC or PWB attached to it. This also includes the state in which the

[0158] <Modification> A modification of the display panel exemplified in this embodiment will be described with reference to FIG.

[0159] FIG. 4 is a schematic cross-sectional view of a pixel of a display panel according to one embodiment of the present invention.

[0160] In the pixel 202A of the display panel exemplified in the modification of this embodiment, the absorption layer 260A is The plate 270 is not attached to the substrate 210, as will be described with reference to FIG. The pixel 202 of the display panel is different from that of the display panel. Therefore, the different parts will be described in detail here. For parts where such a configuration can be used, the explanation given with reference to FIG. 2(C) is cited.

[0161] The pixel 202A of the display panel described as an example of the modification of this embodiment includes an absorption layer 260A. and a light emitting module (for example, the first light emitting module 280R), (See FIG. 4). The first light emitting module 280R includes a substrate 210 and a The adhesive layer 261 is disposed between the overlapping opposing substrates 270 and bonds the opposing substrate 270 to the substrate 210. It is being coordinated.

[0162] In addition, a part of the counter substrate may also function as an absorption layer. 0 is a flexible substrate 270b, a barrier to prevent unintended diffusion of impurities into the light emitting element. Lamination of the film 270a and the adhesive layer 270c that bonds the barrier film 270a to the substrate 270b When the absorber layer is made of a material other than the polymer, a dye can be added to either of the materials to be used in the absorber layer. Specifically, the dye is added to the adhesive layer 270c or the flexible substrate 270b to form an absorbing layer. It is possible.

[0163] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0164] (Embodiment 3) In this embodiment, a structure of a light-emitting element that can be used in a light-emitting device of one embodiment of the present invention will be described. Specifically, a light-emitting device in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes is described. An example of the element will be described with reference to FIG.

[0165] The light-emitting element exemplified in this embodiment has a lower electrode, an upper electrode, and a thin film between the lower electrode and the upper electrode. The device has a layer containing a light-emitting organic compound (hereinafter referred to as an EL layer). The EL layer may be a single layer. A plurality of layers may be laminated, and at least one of the layers contains a light-emitting organic compound. Either the lower or upper electrode functions as an anode, and the other functions as a cathode. The EL layer is provided between the lower electrode and the upper electrode, and the structure of the EL layer is determined according to the material of the lower electrode and the upper electrode. An example of the configuration of the light-emitting element is shown below. However, it goes without saying that the present invention is not limited to this.

[0166] <Light emitting element configuration example 1.> An example of the configuration of a light-emitting element is shown in FIG. The EL layer is sandwiched between the cathode 1102 and the cathode 1102 .

[0167] When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, E Holes are injected into the L layer from the anode 1101 side, and electrons are injected from the cathode 1102 side. The injected electrons and holes recombine in the EL layer, causing the luminescent material contained in the EL layer to emit light. .

[0168] In this specification, the layer in the region where the electrons and holes injected from both ends recombine is called the light-emitting layer. A layer or a laminate having one light-emitting layer is called a light-emitting unit. It can be said that the child configuration example 1 has one light emitting unit.

[0169] The light-emitting unit 1103 may include at least one light-emitting layer containing a light-emitting material. The light-emitting layer may be laminated with a layer other than the light-emitting layer. Substances with high hole injection properties, substances with high hole transport properties, substances with poor hole transport properties (blocking) Materials with high electron transport properties, materials with high electron injection properties, and materials with bipolar properties (electron and positive Examples of the layer include a layer containing a material having a high hole transport property.

[0170] An example of a specific configuration of the light-emitting unit 1103 is shown in FIG. The unit 1103 includes a hole injection layer 1113, a hole transport layer 1114, an emissive layer 1115, and an electron transport layer 1116. A transport layer 1116 and an electron injection layer 1117 are laminated in this order from the anode 1101 side. do.

[0171] <Light emitting element configuration example 2.> Another example of the configuration of the light-emitting element is shown in FIG. An EL layer including a light-emitting unit 1103 is sandwiched between the cathode 1101 and the cathode 1102. Additionally, an intermediate layer 1104 is provided between the cathode 1102 and the light-emitting unit 1103 . In addition, the light-emitting unit 1103 of the light-emitting element of the configuration example 2 includes the light-emitting element of the configuration example 1 described above. The same configuration as that of the light-emitting unit of the light-emitting device can be applied. Please refer to Example 1.

[0172] The intermediate layer 1104 is formed to include at least a charge generating region. For example, the first charge generating region 1104c may be laminated with a layer other than the charge generating region 1104a. The relay layer 1104b and the electron injection buffer 1104a are stacked in order from the cathode 1102 side. A layered structure can be applied.

[0173] The behavior of electrons and holes in the intermediate layer 1104 will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the first charge generating region 1104 and the second charge generating region 1105, the first charge generating region 1104 At c, holes and electrons are generated, the holes move to the cathode 1102, and the electrons move to the electron relay layer 1 The electron relay layer 1104b has high electron transport properties and moves to the first charge generation region 104b. The electrons generated in 1104c are quickly transferred to the electron injection buffer 1104a. The buffer 1104a reduces the barrier for injecting electrons into the light-emitting unit 1103, Therefore, the electron injection efficiency to the first charge generation region 1104c is increased. The electrons travel through the electron relay layer 1104b and the electron injection buffer 1104a to the light-emitting unit 1104b. The electrons are injected into the LUMO level of dot 1103.

[0174] The electron relay layer 1104b is formed by bonding the material constituting the first charge generating region 1104c to the electrons. The substances that make up the injection buffer 1104a react at the interface, damaging each other's functions. This can prevent interactions such as

[0175] The range of materials that can be used for the cathode of the light-emitting device of the second configuration example is as wide as that of the cathode of the first configuration example. The range of materials that can be used for the cathode of the second embodiment is wider than that of the intermediate cathode. This is because the layer only needs to receive the generated holes, and a material with a relatively large work function can be used. do.

[0176] <Light emitting element configuration example 3.> Another example of the configuration of the light-emitting element is shown in FIG. The EL layer has two light-emitting units between the cathode 1101 and the cathode 1102. In addition, an intermediate light emitting unit (1103a) is provided between the first light emitting unit (1103b) and the second light emitting unit (1103b). A layer 1104 is provided.

[0177] The number of light-emitting units provided between the anode and the cathode is not limited to two. The light emitting element shown in FIG. 11 has a structure in which a plurality of light emitting units 1103 are stacked, that is, a so-called tandem type light emitting element. However, for example, n layers (n is a natural number of 2 or more) are formed between an anode and a cathode. When the optical unit 1103 is provided, the mth (m is a natural number, 1 or more (n-1) or less) Between the light-emitting unit and the (m+1)th light-emitting unit, an intermediate layer 1104 is provided. The configuration will be as follows.

[0178] In addition, the light-emitting unit 1103 of the light-emitting element of the configuration example 3 includes the light-emitting element of the configuration example 1 described above. It is possible to apply a similar configuration to the intermediate layer 110 of the configuration example 3 of the light-emitting device. The same configuration as in the configuration example 2 of the light-emitting device described above can be applied to the light-emitting device 4. For this, the description of Configuration example 1 of the light-emitting element or Configuration example 2 of the light-emitting element can be referred to.

[0179] The behavior of electrons and holes in the intermediate layer 1104 provided between the light-emitting units will be described. When a voltage higher than the threshold voltage of the light-emitting element is applied between the anode 1101 and the cathode 1102, In the intermediate layer 1104, holes and electrons are generated, and the holes are guided to the light-emitting The electrons move to the light-emitting unit on the anode side. The holes injected into the light-emitting unit are recombined with the electrons injected from the cathode side, producing the light-emitting The luminescent material contained in the unit emits light. The injected electrons are recombined with holes injected from the anode side to form the light-emitting element contained in the light-emitting unit. The material emits light. Therefore, the holes and electrons generated in the intermediate layer 1104 are This leads to light emission in the light-emitting unit.

[0180] In addition, by providing the light-emitting units in contact with each other, the same structure as the intermediate layer is formed between them. In this case, the light-emitting units can be provided in contact with each other. When a charge generating region is formed on one surface, the charge generating region is a first charge generating region of the intermediate layer. Since it functions as a green area, the light-emitting units can be provided in contact with each other.

[0181] The light-emitting element configuration examples 1 to 3 can be used in combination with each other. For example, An intermediate layer can be provided between the cathode and the light-emitting unit in the third structural example of the light-emitting element.

[0182] <Configuration including a microresonator> In addition, a microcavity (microcavity) is constructed by a reflective film and a semi-transmissive / semi-reflective film overlapping the reflective film. The light emitting element may be sandwiched between the cavity and the microresonator. By placing the light emitting elements in a position that allows the light emitted by the light emitting elements to interfere with each other, the light that exhibits a specific color can be efficiently captured. It can be brought out.

[0183] In this specification, a semi-transmitting / semi-reflective film transmits part of the incident light and reflects part of it. The semi-transmitting / semi-reflective film used in the microresonator is preferably one that absorbs little light. stomach.

[0184] The wavelength of the extracted light depends on the distance between the reflective film and the semi-transmissive / semi-reflective film. An optical adjustment layer for adjusting the distance of the semi-reflective film may be provided on the light-emitting element.

[0185] Materials that can be used for the optical adjustment layer include conductive films that are transparent to visible light. In addition, an EL layer can be applied.

[0186] For example, a laminated film of a conductive film having light transmitting properties and a reflective film or a laminated film of a conductive film having light transmitting properties and a semi-transparent film A laminated film of a semi-reflective film can be used for the lower electrode or the upper electrode that also serves as an optical adjustment layer. .

[0187] Alternatively, an intermediate layer with an adjusted thickness may be used as the optical adjustment layer. The thickness of the hole-transporting material is adjusted by controlling the thickness of the hole-transporting material. The electrical resistance of this structure is the same as that of other structures that constitute the EL layer. This means that even if the thickness is increased for optical adjustment, the driving voltage of the light-emitting element is This is preferable because it can suppress the increase in

[0188] <Materials that can be used in light-emitting devices> Next, specific materials that can be used in the light-emitting device having the above-mentioned configuration will be described. The cathode and EL layer will be described in that order.

[0189] 1. Materials that can be used for the anode The anode 1101 is made of a conductive metal, alloy, electrically conductive compound, or a mixture of these. It is composed of a single layer or a laminate. In particular, it has a large work function (specifically, 4.0 eV or more). A configuration in which the material is in contact with the EL layer is preferred.

[0190] Examples of metal or alloy materials include gold (Au), platinum (Pt), and nickel (Ni). , Tungsten (W), Chromium (Cr), Molybdenum (Mo), Iron (Fe), Cobalt ( Metallic materials such as Co, copper (Cu), palladium (Pd), titanium (Ti), etc., or Examples of alloy materials include

[0191] Examples of the electrically conductive compound include oxides of metal materials, nitrides of metal materials, conductive polymers, and the like. Children are mentioned.

[0192] As a specific example of an oxide of a metal material, indium tin oxide (ITO) is n Oxide), indium-tin oxide containing silicon or silicon oxide, titanium-containing Indium-tin oxide, indium-titanium oxide, indium-tungstate Examples include indium zinc oxide, indium zinc oxide containing tungsten, etc. In addition, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, Examples of oxides include tantalum oxide, manganese oxide, and titanium oxide.

[0193] Films containing oxides of metal materials are usually formed by sputtering, but the sol-gel method It is also possible to manufacture it by applying the above.

[0194] Specific examples of nitrides of metal materials include titanium nitride and tantalum nitride.

[0195] As a specific example of a conductive polymer, poly(3,4-ethylenedioxythiophene) / poly(s Polyaniline / Poly(styrenesulfonic acid) (PEDOT / PSS), Polyaniline / Poly(styrenesulfonic acid) )(PAni / PSS) etc.

[0196] In addition, when a second charge generating region is provided in contact with the anode 1101, the magnitude of the work function is Various conductive materials can be used for the anode 1101 without considering the work function. Not only materials with a high work function but also materials with a low work function can be used. Materials that can be applied to the raw regions and the first charge generating regions are described below.

[0197] 2. Materials that can be used for the cathode The first charge generating region 1104c is in contact with the cathode 1102 and is disposed between the light emitting unit 1103 and the first charge generating region 1104b. When provided, the cathode 1102 can be made of various conductive materials regardless of the magnitude of the work function. can.

[0198] At least one of the cathode 1102 and the anode 1101 is made of a conductive material that transmits visible light. For example, the cathode 1102 or the anode 1101 is formed of a film that transmits visible light. When one side is formed using a conductive film that reflects visible light and the other side is formed using a conductive film that reflects visible light, In addition, a light emitting element that emits light on both the cathode 1102 and the anode 1101 can be formed. If the other side is formed using a conductive film that transmits visible light, a light-emitting element that emits light on both sides can be formed. Can be configured.

[0199] Examples of the conductive film that transmits visible light include indium-tin oxide, silicon, and silicon oxide. Indium-tin oxide containing silicon, indium-tin oxide containing titanium, indium Indium-titanium oxide, indium-tungsten oxide, indium-zinc oxide, tungsten In addition, the degree of light transmission (preferably indium zinc oxide) is also Preferably, a metal thin film having a thickness of about 5 nm or more and 30 nm or less can be used.

[0200] The conductive film that reflects visible light may be made of, for example, a metal, specifically, silver, aluminum, etc. Examples of the metal materials include aluminum, platinum, gold, copper, and alloy materials containing these metals. Examples of the alloy include a silver-neodymium alloy and a magnesium-silver alloy. Aluminum alloys include aluminum-nickel-lanthanum alloys, aluminum-titanium alloys, Examples of such alloys include aluminum alloys and aluminum-neodymium alloys.

[0201] 3. Materials that can be used for the EL layer The materials that can be used for each layer constituting the light-emitting unit 1103 are as follows: A concrete example is shown below.

[0202] The hole injection layer is a layer containing a substance with high hole injection properties. For example, molybdenum oxide, vanadium oxide, ruthenium oxide, and tungsten oxide. , manganese oxide, etc. can be used. In addition, phthalocyanine (abbreviation: HPc) Phthalocyanine compounds such as copper phthalocyanine (abbreviation: CuPc), or poly(3 ,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PS The hole injection layer can also be formed from a polymer such as S).

[0203] The hole injection layer may be formed by using the second charge generation region. When the charge generation region is used, various conductive materials can be used for the anode 1101 without considering the work function. As described above, the material constituting the second charge generating region can be the same as that of the first charge generating region. This will be described later together with the charge generating region.

[0204] 3.1 Hole transport layer The hole transport layer is a layer containing a substance having a high hole transporting property. The layer may be a laminate of two or more layers each containing a substance having a high hole transporting property. Any substance with a high -6 cm 2 A substance having a hole mobility of at least / Vs is This is preferable because the driving voltage of the light emitting element can be reduced.

[0205] As a material with high hole transport properties, aromatic amine compounds (e.g., 4,4'-bis[N-( 1-Naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD) and carbazole derivatives (e.g., 9-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl) CzPA) and other polymers. Compounds such as poly(N-vinylcarbazole) (abbreviation: PVK) can be used. Cut.

[0206] 3.2 Emitting layer The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer is not limited to a single layer, but may be a layer having two layers containing a light-emitting substance. The light-emitting material may be a fluorescent compound or a phosphorescent compound. It is preferable to use a phosphorescent compound as the light-emitting substance because the light-emitting efficiency of the light-emitting element can be increased. stomach.

[0207] Fluorescent compounds (e.g., Coumarin 545T) and phosphorescent compounds (e.g., Tris(2-phenylpyridinato)iridium(III) (abbreviation: Ir(ppy)3) etc. can be used.

[0208] The light-emitting material is preferably dispersed in a host material. It is preferable that the electromotive energy is larger than the excitation energy of the luminescent material.

[0209] The host material can be a material having a high hole transporting property as described above (e.g., For example, aromatic amine compounds, carbazole derivatives, polymer compounds, etc.) Highly functionalized substances (e.g., metal complexes having a quinoline or benzoquinoline skeleton, oxazo Metal complexes having aryl or thiazole ligands, etc., can be used.

[0210] 《3.3 Electron transport layer》 The electron transport layer is a layer containing a substance having a high electron transporting property. The layer may be a laminate of two or more layers each containing a substance having a high electron transporting property. Any substance with a high -6 cm 2 A substance having an electron mobility of at least 1000 V / Vs is This is preferable because the driving voltage of the light emitting element can be reduced.

[0211] As a substance with high electron transport properties, metal complexes having a quinoline skeleton or a benzoquinoline skeleton are (e.g., tris(8-quinolinolato)aluminum (abbreviation: Alq)), oxazo Metal complexes with thiazole and thiazole ligands (e.g., bis[2-(2-hydroxyphenyl) Zinc(BOX2) (abbreviation: Zn(BOX)2)), other compounds (e.g. For example, bathophenanthroline (abbreviation: BPhen) can be mentioned. (e.g., poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridyl) PF-Py) and the like can be used.

[0212] 《3.4 Electron injection layer》 The electron injection layer is a layer containing a substance with high electron injection properties. The electron injection layer may be a layer including two or more layers each containing a substance having a high electron injection property. This increases the efficiency of electron injection from the cathode 1102, making it possible to reduce the driving voltage of the light-emitting element. This is preferable because

[0213] Materials with high electron injection properties include alkali metals (e.g., lithium (Li), cesium ( Cs), alkaline earth metals (e.g., calcium (Ca)), or compounds thereof ( For example, oxides (specifically, lithium oxide, etc.), carbonates (specifically, lithium carbonate and carbonate Cesium, etc.), halides (specifically lithium fluoride (LiF), cesium fluoride ( CsF), calcium fluoride (CaF2), etc.

[0214] In addition, a layer containing a substance with high electron injection properties is formed by stacking a layer containing a substance with high electron transport properties and a layer containing a donor substance ( Specifically, it may be formed of Alq containing magnesium (Mg). The mass ratio of the donor substance to the substance with high electron transport properties is 0.001 or more. A ratio of 0.1 or less is preferred.

[0215] The donor substance may be an alkali metal, an alkaline earth metal, a rare earth metal, or any of these. In addition to the above compounds, tetrathianaphthacene (abbreviation: TTN), nickelocene, decamethylnickel Organic compounds such as kerosene can also be used.

[0216] 3.5 Charge generation region The first charge generation region 1104c and the second charge generation region are made of a material having a high hole transporting property. The charge generation region is a region containing a substance with high hole transport properties in the same film. In addition to the case where a layer containing a material with high hole transport properties and an acceptor material is used, However, the first charge generating region may be a layer including a material having an acceptor property. In the case of a laminated structure provided on the cathode side, a layer containing a material with high hole transport properties is in contact with the cathode 1102. In the case of a laminated structure in which the second charge generation region is provided on the anode side, the acceptor The layer containing the conductive material is in contact with the anode 1101 .

[0217] In addition, in the charge generation region, the mass ratio of the material with high hole transport properties to the material with high hole transport properties is 0.1 or more and 4. It is preferable to add the acceptor substance at a ratio of 0 or less.

[0218] Acceptor substances used in the charge generation region include transition metal oxides and elements in the periodic table. Examples of the oxides of metals belonging to Groups 4 to 8 include molybdenum oxide. Molybdenum oxide is particularly preferred. Molybdenum oxide has the characteristic of low hygroscopicity. .

[0219] In addition, examples of the material having a high hole transporting property used in the charge generating region include aromatic amine compounds, carbene compounds, and benzene compounds. Bazole derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers Various organic compounds such as 10 -6 cm 2 / Vs However, it is preferable that the material has a hole mobility of 100 or more. Any other substance may be used as long as it has a high resistance.

[0220] Electronic Relay Layer The electron relay layer 1104b is an acceptor material in the first charge generating region 1104c. Therefore, the electron relay layer 11 is a layer that can quickly receive the electrons that are extracted by the electron relay layer 11. 04b is a layer containing a substance with high electron transport properties, and its LUMO level is the first charge The acceptor level of the acceptor substance in the generation region 1104c and the electron relay The layer is located between the LUMO level of the adjacent light-emitting unit 1103. It is preferable to set the value to -5.0 eV or more and -3.0 eV or less.

[0221] The material used for the electron relay layer 1104b is a perylene derivative (e.g., 3,4,9, 10-Perylenetetracarboxylic dianhydride (abbreviation: PTCDA) and nitrogen-containing condensed aromatic Compounds (e.g., pyrazino[2,3-f][1,10]phenanthroline-2,3-dica Polybutene Nitride (abbreviation: PPDN) etc.

[0222] In addition, since the nitrogen-containing condensed aromatic compound is a stable compound, it is suitable for use in the electron relay layer 1104b. Furthermore, among nitrogen-containing condensed aromatic compounds, those containing cyano groups or fluoro groups are preferred. By using a compound having an electron-withdrawing group such as a group, the electron-relay layer 1104b This is preferred because it makes it easier for the aryl group to accept electrons.

[0223] 《Electron injection buffer》 The electron injection buffer is a layer containing a substance with high electron injection properties. 1104a facilitates the injection of electrons from the first charge generating region 1104c to the light emitting unit 1103. The electron injection buffer 1104a is connected to the first charge generation region 1104c. By providing it between the optical units 1103, the injection barrier between them can be reduced.

[0224] The substance having high electron injection property is an alkali metal, an alkaline earth metal, a rare earth metal, or These compounds and the like are included.

[0225] In addition, a layer containing a substance with high electron injection properties is formed by dividing a layer containing a substance with high electron transport properties and a layer containing a donor substance. It may be formed.

[0226] <Method of manufacturing light-emitting element> One embodiment of a method for manufacturing a light-emitting element will be described. The EL layer is formed by bonding the EL layer to the substrate. The EL layer can be formed by various methods (e.g., dry process) depending on the material used. For example, a vacuum deposition method, a transfer method, a printing method, an inkjet method, etc. can be used. Alternatively, a different method may be used for each layer. An upper electrode is formed on the EL layer to manufacture a light emitting element.

[0227] The light-emitting element shown in this embodiment can be manufactured by combining the above-mentioned materials. From this light-emitting element, light is emitted from the above-mentioned luminescent material, and the color of the emitted light is Selection can be made by changing the type of luminescent material.

[0228] In addition, by using multiple luminescent materials with different luminescent colors, the width of the emission spectrum can be expanded. In order to obtain white light emission, for example, a light-emitting material may be included. The composition has at least two layers each having a complementary color. The color of the light emitted by the LED can be expressed as the color of the light emitted by the LED. Alternatively, blue-green and red may be used.

[0229] Furthermore, to obtain white light with good color rendering, the emission spectrum must extend over the entire visible light range. For example, one light emitting element may have a layer that emits blue light, a layer that emits green light, and The light emitting layer may include a layer that emits red light and a layer that emits red light.

[0230] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0231] (Embodiment 4) In this embodiment, an electronic device to which the light-emitting device or the light-emitting panel of one embodiment of the present invention is applied will be described. This will be described with reference to FIG.

[0232] An electronic device according to one embodiment of the present invention includes a display unit including the light-emitting panel according to one embodiment of the present invention. Images can be displayed on the display unit. For example, broadcast or distributed video information or information recording media It can display image information stored in the body. It can display information processed by an information processing device. can display images to be used for operation on an operation panel or the like.

[0233] Examples of electronic devices that display video information include television sets and digital photo frames. One example is the following.

[0234] Examples of the information processing device include a computer, a digital camera, a digital video camera, or Examples of the portable information terminal include a portable information terminal.

[0235] Other electronic devices include watches, mobile phones, portable game machines, and large game machines (pachinko machines). Examples of such devices include audio players, stereos, and audio playback devices.

[0236] <Television equipment> The television device 7100 is mounted in a housing 7101 supported by a stand 7105. The television set 7100 includes a display portion 7103 (see FIG. 6A). The display portion 7103 includes a light-emitting panel according to one embodiment of the present invention, and can display images.

[0237] The remote controller 7110 can operate the television device 7100. For example, For example, it is possible to select video information to be displayed on the display portion 7103, adjust the volume, and the like.

[0238] The remote controller 7110 controls the information input / output panel 7107 and the operation keys 7109. Yes.

[0239] The display unit 7103 can display the broadcast received by the receiver or the video supplied from the modem. .

[0240] The television device 7100 is connected to the Internet, and information is transmitted bidirectionally (between the sender and the receiver). , or between recipients, etc.

[0241] <Information processing device> As an example of an information processing device, a computer is shown in FIG. 201, housing 7202, display unit 7203, keyboard 7204, external connection port 7205 , a pointing device 7206, etc. In addition, the computer is The display portion 7203 has a light-emitting panel and can display images.

[0242] <Amusement machines> An example of a portable game machine is shown in FIG. 6C. The illustrated portable game machine has a housing 7301 and The device is made up of two housings, a housing 7302 connected by a connection part 7303 so as to be openable and closable. The housing 7301 includes a first display unit 7304, and the housing 7302 includes a second display unit 7304. The portable game machine also includes a light-emitting panel according to one embodiment of the present invention. The device has a first display portion 7304 and a second display portion 7305 and can display images.

[0243] The portable gaming machine also includes a speaker unit 7306, a recording medium insertion unit 7307, and an LED lamp 7 308, input means (operation keys 7309, connection terminals 7310, sensors 7311 (force, displacement, Position, speed, acceleration, angular velocity, rotation speed, distance, infrared light, liquid, magnetism, temperature, chemicals quality, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, etc. The device is equipped with a sensor (including a function to measure odors or smells), a microphone 7312, etc.

[0244] The portable game machine reads out a program or data recorded on the recording medium and executes a first The display unit 7304 and the second display unit 7305 have a function of displaying information, and the device can be connected wirelessly to other portable game machines. It has the function of communicating and sharing information.

[0245] <Mobile phone> An example of a mobile phone is shown in FIG. 6D. A mobile phone 7400 is incorporated in a housing 7401. In addition to the display unit 7402, the operation buttons 7403, the external connection port 7404, the speaker 74 7405, a microphone 7406, and the like. The display portion 7402 has a light-emitting panel and can display images.

[0246] The display portion 7402 has a proximity sensor, and information can be input by touching or approaching with a finger or the like. can be exerted.

[0247] In addition, a detection device having a sensor for detecting the inclination, such as a gyro or an acceleration sensor, is provided. The orientation of the mobile phone 7400 (vertical or horizontal) is determined and the screen display of the display unit 7402 is automatically adjusted. It is possible to make it switchable.

[0248] The display portion 7402 can also function as a two-dimensional image sensor. A palm print of a palm touching the display unit 7402, a fingerprint of a finger, or the like is detected by a backlight that emits near-infrared light or Identity authentication is performed using images of palm veins, finger veins, etc. captured using a sensing light source. It is possible.

[0249] <Mobile information terminal> An example of a folding type portable information terminal is shown in FIG. The device is equipped with a housing 7451L and a housing 7451R connected by a switch 7454. The terminal 7450 includes an operation button 7453, a left speaker 7455L, and a right speaker 74 In addition to the port 55R, the portable information terminal 7450 has an external connection port 7456 (not shown) on its side. The display unit 7452L provided in the housing 7451L and the display unit 7452R provided in the housing 7451R are also provided. When the hinge 7454 is folded so that the two display units 7452R face each other, The display portion can be protected by the housing. The display unit 7452 includes a display unit 7452L and a display unit 7452R each having a light-emitting panel, and can display an image.

[0250] In addition, the mobile information terminal 7450 is equipped with a gyro, an acceleration sensor, a GPS (Global Positioning System), It can also be equipped with a satellite location system (SAT) receiver and video camera. For example, a detection device having a sensor for detecting the inclination, such as a gyro or an acceleration sensor, may be provided. Then, the orientation of the mobile information terminal 7450 (portrait or landscape) is determined and the orientation of the screen to be displayed is automatically adjusted. It is possible to switch to.

[0251] The portable information terminal 7450 can be connected to a network. In addition to being able to display information on the Internet, it can also remotely control other electronic devices connected to the network. It can be used as a terminal to operate.

[0252] <Lighting equipment> An example of a lighting device is shown in FIG. 6F. A lighting device 7500 is incorporated in a housing 7501. Light emitting device 7503a, light emitting device 7503b, light emitting device 7503c, and light emitting device 7503 The lighting device 7500 can be attached to a ceiling, a wall, etc. The light emitting device 7500 includes a light emitting device according to one embodiment of the present invention.

[0253] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. . EXAMPLES

[0254] In this embodiment, an absorption layer applicable to a light-emitting device, a light-emitting panel, and a display panel is shown in FIG. 7 to 9.

[0255] FIG. 7 shows an absorption diagram of an absorption layer applicable to a light-emitting device, a light-emitting panel, and a display panel according to one embodiment of the present invention. The absorption spectrum of the absorption layer is shown in Fig. 1. The spectrophotometer (Hitachi High-Technologies Corporation, product name: U-4100) was used. The emission spectrum of the light-emitting module was measured using a spectroradiometer (Ultra-radiometer). The measurements were performed using a meter (manufactured by Shio Denki Co., Ltd.).

[0256] Specifically, FIG. 7A shows the absorption spectrum 360(1)Abs of the absorbing layer 360(1). Emission spectrum 380EM(R), emission spectrum 380EM(G) and emission spectrum The model is Tor 380EM(B).

[0257] Specifically, FIG. 7B shows the absorption spectrum 360(2)Abs of the absorbing layer 360(2). Emission spectrum 380EM(R), emission spectrum 380EM(G) and emission spectrum The model is Tor 380EM(B).

[0258] The emission spectrum 380EM(R) had a maximum wavelength of 611 nm and a half-width of 45 nm. The emission spectrum 380EM(G) had a maximum wavelength of 533 nm and a half-width of 36 nm. The emission spectrum 380EM(B) had a maximum wavelength of 460 nm and a half-width of 29 nm.

[0259] In addition, the light emitting module that emits light with an emission spectrum of 380EM(R) A light emitting module emitting light having a 380EM (G) and a light emission spectrum of 38 The configuration of a display panel having a light-emitting module that emits light having 0EM(B) is shown in Example 1. This is explained in detail in 2.

[0260] FIG. 8 shows the state of light reflected by a display panel on which an absorbing layer is layered, as explained in this embodiment, and the state of the absorbing layer 13A and 13B are diagrams illustrating the state of light reflected by a display panel on which no overlapping portion is provided.

[0261] Specifically, FIG. 8(A) shows a display panel on which an absorbing layer 360(1) is superimposed, which absorbs reflected light. FIG. 8(B) shows the structure with the absorbent layer 360(2) superimposed. This is a photograph of the light reflected by the panel. Note that Fig. 8(C) shows the panel without the absorber layer. This is a photograph of the light reflected by a bright display panel.

[0262] FIG. 9 is a diagram for explaining a method for producing an absorption layer and a method for evaluating the reflection of external light, which are described in this embodiment. It is.

[0263] Specifically, FIG. 9(A-1) to FIG. 9(A-3) are applicable to a display panel of one embodiment of the present invention. FIG. 9(B) is a diagram for explaining a method for producing the absorbing layer 360 that can be used for the absorbing layer 360. 11A and 11B are diagrams illustrating a method for observing the effect of suppressing undesirable reflection.

[0264] The structures of the absorbent layer 360(1) and the absorbent layer 360(2) produced in this example are described below. The composition of the absorbent layer 360(1) and the absorbent layer 360(2) is shown in Table 1. show.

[0265] [Table 1]

[0266] <Absorption layer 360(1)> The absorbing layer 360(1) is made of a dye (manufactured by Yamada Chemical Industry Co., Ltd., product name: RPC-122) and and two-component epoxy adhesive (Arteco Corporation, product name: R2007 / H-1010). include.

[0267] The absorption layer 360(1) absorbs a portion of the light having a wavelength longer than 611 nm. Also, some of the light with a wavelength shorter than 611 nm was absorbed more than the light with a wavelength of 611 nm. (See FIG. 7(A)).

[0268] The absorption layer 360(1) absorbs a portion of the light having a wavelength longer than 533 nm. It absorbed more light with a wavelength shorter than 533 nm than light with a wavelength of 533 nm.

[0269] The absorption layer 360(1) absorbs a portion of the light having a wavelength longer than 460 nm from the light having a wavelength of 460 nm. It absorbed a portion of the light with a wavelength shorter than 460 nm compared to the light with a wavelength of 460 nm.

[0270] The display panel with the absorbent layer 360(1) overlapped is different from the display panel without the absorbent layer overlapped. In particular, the regularly-spaced sub-pixels on the display panel reflect light. The light intensity is suppressed, compared to a display panel without an absorbent layer (see FIG. 8(C)). As a result, the pattern caused by interference fringes became less visible (see FIG. 8(A)).

[0271] <Absorption layer 360(2)> The absorbing layer 360(2) is made of a pigment (Hayashibara Co., Ltd., product name: G207), , product name: G241) and two-component epoxy adhesive (manufactured by Alteco Corporation, product name: R2 007 / H-1010).

[0272] The absorption layer 360(2) absorbs a portion of the light having a wavelength shorter than 611 nm, and absorbs the light having a wavelength shorter than 611 nm. The α-amyloides were absorbed by the α-amyloides (see FIG. 7(B)).

[0273] The absorption layer 360(2) absorbs a portion of the light having a wavelength longer than 533 nm. It absorbed more light with wavelengths shorter than 533 nm than it absorbed light with wavelengths of 533 nm.

[0274] The absorption layer 360(2) absorbs a portion of the light having a wavelength longer than 460 nm. It absorbed more light with a wavelength shorter than 460 nm than light with a wavelength of 460 nm.

[0275] The absorbing layer 360(2) absorbs a portion of the light having wavelengths between 611 nm and 533 nm. The 611 nm light and the 533 nm light were absorbed more than the 611 nm light. , a part of the light having a wavelength between 611 nm and 460 nm is divided into light having a wavelength of 611 nm and It absorbs light with a wavelength of 460 nm.

[0276] The display panel with the absorbent layer 360(2) overlapped is different from the display panel without the absorbent layer overlapped. In particular, the regularly-spaced sub-pixels on the display panel reflect light. The light intensity is suppressed, compared to a display panel without an absorbent layer (see FIG. 8(C)). , the pattern caused by interference fringes became difficult to observe (see FIG. 8(B)).

[0277] <Method of producing the absorption layer> The method for producing the absorbing layer in this embodiment will be described below with reference to FIG. 9(A-1) to FIG. 3) will be used to explain.

[0278] In step 1, a spacer with a diameter of 4 μm is attached to a non-alkali glass substrate 31 with a thickness of 0.7 mm. Scattered to 0.

[0279] In step 2, ultraviolet-curing sealant 355 (manufactured by Nagase Chemtex Corporation, Product name: XNR-5516Z) was applied in a closed curve (see Figure 9 (A-1)).

[0280] In step 3, the uncured absorbent layer material was dropped onto the area surrounded by the sealant 355. (See Figure 9(A-2)).

[0281] In step 4, the uncured absorbing layer is applied to the glass substrate 310 and the non-alkali glass substrate 370. The two were pressed together at a pressure of 0.1 MPa for two minutes (see Figure 9 (A-3)). .

[0282] In step 5, the sealant was irradiated with ultraviolet light to harden it. A mask was used to protect the absorber layer from UV light.

[0283] In step 6, the absorbent layer containing the two-part epoxy adhesive is left for one day. Hardened 360.

[0284] <Method for evaluating reflection of external light> A method for evaluating the external light reflected by the display panel will be described with reference to FIG.

[0285] The sample was a display panel with an absorbent layer. The light was irradiated at an angle of about 45° to the surface of the sample. A display panel without any absorbent layer was used as a comparative sample.

[0286] The external light reflected by the sample was captured by a digital camera at an angle of approximately 45° to the sample surface. I took a picture.

[0287] In addition, a mini halogen lamp (manufactured by Panasonic Corporation, product name: Multilayer HE / Die A Cool S Mirror (registered trademark) was used as the light source.

[0288] <Evaluation Results> The display panel of this embodiment is made up of light-emitting modules arranged repeatedly at a high spatial frequency and electrically The conductive film connected to the light emitting element is provided with an absorption layer capable of absorbing light reflected by the conductive film. Not only can it display high-definition, high-quality images, but the light reflected by the conductive film does not interfere with each other. As a result, the annoying light caused by the interference phenomenon (e.g. We have been able to provide a novel display panel in which the appearance of patterns due to interference fringes, for example, is reduced. By absorbing excess parts of the spectrum of the light emitted into the optical module, The color reproducibility of the display panel has been improved. Specifically, the display panel using the absorption layer 360(1) The NTSC ratio was improved from 102% to 105%. EXAMPLES

[0289] In this embodiment, a display panel that can be stacked with the absorption layer described in the first embodiment is described. This will be described with reference to FIG. 4 and FIG.

[0290] FIG. 10 is a schematic diagram illustrating the configuration of a light-emitting element applied to a display panel described in this embodiment. be.

[0291] In this embodiment, the pixel 202A described in the modification of the second embodiment is imaged at a resolution of 326 ppi. The display panel manufactured in this example has a display area 201 surrounded by a The sealing material is configured to bond the substrate 210 to the opposing substrate 270, and dried nitrogen gas The point that the space between the light emitting element (for example, the first light emitting element 250R) and the counter substrate 270 is filled with This is different from the display panel described in the modified example of the second embodiment. A absorbing layer was applied to the absorbent layer 260A.

[0292] <Configuration of light-emitting element> The light emitting element (for example, 250R) includes a lower electrode (for example, 251R), an upper electrode 252, and Between them are two light-emitting units (253a, 253b) and a light-emitting unit sandwiched between them. The intermediate layer 254 is disposed between the first and second layers 252 and 254.

[0293] The light emitting element is formed by a lower electrode 251 and an upper electrode 252, and a light emitting element between the lower electrode 251 and the upper electrode 252. The lower electrode 251 is provided with a layer 253 containing a light-emitting organic compound (see FIG. 10). It is provided on a reflective conductive film 225 on a substrate 210 .

[0294] A semi-transmissive / semi-reflective film is used for the upper electrode 252, and a lower electrode layer is laminated on the reflective conductive film 225. By using the final electrode 251, a microresonator was formed.

[0295] <<Configuration of the lower electrode>> A 200 nm thick aluminum film laminated with a 5 nm or 8 nm thick titanium film is used to reflect light. The reflective conductive film 225 was used to supply power to the lower electrode 251. In addition, a silicon oxide-containing indium tin oxide (ITSO) film is placed underneath the It was used for the external electrode 251.

[0296] The ITSO film also serves as an optical adjustment layer, and the thickness of the optical adjustment layer is optimized for each emitted color. Specifically, an ITSO film with a thickness of 85 nm is provided on a light-emitting module that emits red light. A 45 nm thick ITSO film is provided on a light emitting module that emits green light, and a 5 nm thick ITSO film is provided on a light emitting module that emits green light. A 10 nm ITSO film was provided on a light-emitting module that emitted blue light.

[0297] <<Configuration of the upper electrode>> A 15 nm thick silver matrix laminated with a 70 nm thick indium tin oxide (ITO) layer. A magnesium alloy film was used for the upper electrode 252. A silver-magnesium alloy film was used for the upper electrode 252. The layers were co-evaporated in a weight ratio of 10:1 (=Ag:Mg).

[0298] <<Configuration of Layer Containing Light-Emitting Organic Compound>> The layer 253 containing a light-emitting organic compound includes two EL layers (a first EL layer 1503a and a second EL layer 1503b). The intermediate layer 1504 was sandwiched between the EL layers 1503b. It's called structure.

[0299] The first EL layer 1503a is formed by stacking a hole injection layer 1511, a first hole transport layer 1512, and a second hole transport layer 1513 on the lower electrode 251. 1512, a first light-emitting layer 1513, a first electron transport layer 1514a, and a second electron transport A layer 1514b was formed by depositing films in this order.

[0300] The intermediate layer 1504 is formed by forming an electron injection buffer layer 1504a on the electron transport layer 1514b, The relay layer 1504b and the charge generating region 1504c are formed in this order. did.

[0301] The second EL layer 1503b is formed on the intermediate layer 1504 by forming a second hole transport layer 1522, a second emitting layer 1523, and a second hole transport layer 1524 on the intermediate layer 1504. A third light emitting layer 1523a, a third light emitting layer 1523b, a third electron transport layer 1524a, a fourth electron transport layer A transport layer 1524b and an electron injection layer 1525 were formed in this order.

[0302] Details of the materials used in the layer containing the above-mentioned light-emitting organic compound are shown in Table 2. The thickness of 1512 was changed depending on the configuration of the bottom electrode. Specifically, a titanium film with a thickness of 5 nm was used. When a 200 nm thick aluminum film having a layer of the above is used as the lower electrode, the hole transport layer 1 The thickness of the 512 is 13 nm, and a 200 nm thick aluminum film is laminated with a titanium film of 8 nm thickness. When a tungsten film was used for the lower electrode, the thickness of the hole transport layer 1512 was set to 10 nm.

[0303] [Table 2]

[0304] The structural formulae of some of the organic compounds used in this embodiment are shown below.

[0305] [ka] [Explanation of symbols]

[0306] 11. Outdoor Light 100 Light emitting device 100B Light-emitting panel 110 Substrate 110a Barrier film 110b Base material 125G conductive film 125R conductive film 151G lower electrode 151R lower electrode 152 Upper electrode 153 Layer containing luminescent organic compound 160 Absorption Layer 160Abs Absorption Spectrum 170 Opposing substrate 180Em spectrum 180G Secondary Light Emitting Module 180R First light-emitting module 200 Display Panel 201 Display area 202 pixels 202A Pixel 202B subpixel 202G subpixel 202R subpixel 202t Transistor 203c capacity 203g Scanning line driver circuit 203s Data line driver circuit 203t Transistor 209 FPC 210 Substrate 210a Barrier film 210b board 210c adhesive layer 211 Wiring 219 Terminal 221 Insulating film 225 Conductive Film 225B Conductive film 225G conductive film 225R conductive film 228 Bulkhead 229 Spacer 250R Light emitting element 251 Lower electrode 251R lower electrode 252 Upper electrode 253 Layer containing luminescent organic compounds 253a Light Emitting Unit 253b Light Emitting Unit 254 Middle Class 260 Absorbing Layer 260A Absorption Layer 260Abs Absorption Spectrum 261 Adhesive layer 267B Colored layer 267BM light shielding layer 267G colored layer 267R colored layer 270 Opposing Substrate 270a Barrier film 270b Board 270c adhesive layer 280B Third Light Emitting Module 280Em spectrum 280G Secondary Light Emitting Module 280R First Light Emitting Module 310 Glass substrate 355 Sealing material 360 Absorption layer 360(1)Abs absorption spectrum 360(2)Abs absorption spectrum 370 Glass Substrate 380EM Emission Spectrum 1101 Anode 1102 Cathode 1103 Light Emitting Unit 1103a Light Emitting Unit 1103b Light Emitting Unit 1104 Middle Class 1104a Electron injection buffer 1104b Electronic Relay Layer 1104c Charge generation region 1113 Hole injection layer 1114 Hole transport layer 1115 Light-emitting layer 1116 Electron transport layer 1117 Electron injection layer 1503a EL layer 1503b EL layer 1504 Middle Class 1504a Electron injection buffer layer 1504b Electronic Relay Layer 1504c Charge generation area 1511 Hole injection layer 1512 Hole transport layer 1513 Light-emitting layer 1514a Electron transport layer 1514b Electron transport layer 1522 Hole transport layer 1523a Light-emitting layer 1523b Light-emitting layer 1524a Electron transport layer 1524b Electron transport layer 1525 Electron injection layer 7100 Television equipment 7101 Case 7103 Display section 7105 Stand 7107 Information Input / Output Panel 7109 Operation key 7110 Remote Controller 7201 Main unit 7202 Case 7203 Display section 7204 Keyboard 7205 External connection port 7206 Pointing Device 7301 Case 7302 Case 7303 Connection section 7304 Display section 7305 Display section 7306 Speaker section 7307 Recording medium insertion section 7308 LED Lamp 7309 Operation key 7310 Connection terminal 7311 Sensor 7312 Microphone 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike 7450 Mobile Information Terminal 7451L Housing 7451R Housing 7452L Display section 7452R Display section 7453 Operation button 7454 Hinge 7455L Left speaker 7455R Right speaker 7456 External connection port 7500 Lighting Equipment 7501 Case 7503a Light Emitting Device 7503b Light emitting device 7503c Light Emitting Device 7503d Light Emitting Device

Claims

1. A first electrode; a layer including a first light-emitting organic compound on the first electrode; a second electrode on the layer containing the first organic compound; and a first light-emitting element that emits red light in a direction above the second electrode; A third electrode; and a layer including a second light-emitting organic compound on the third electrode; a fourth electrode over the layer containing the second organic compound; and a second light-emitting element that emits green light in a direction above the fourth electrode. an absorbing layer disposed on the second electrode and on the fourth electrode; a first color layer and a second color layer disposed on the absorbent layer; the first electrode includes a first conductive film having a light-transmitting property and a second conductive film having a reflecting property and disposed under the first conductive film and in contact with the first conductive film; the third electrode includes a third conductive film having a light-transmitting property, and a fourth conductive film having a reflecting property and disposed under the third conductive film and in contact with the third conductive film; a distance between the second conductive film and the second electrode is different from a distance between the fourth conductive film and the fourth electrode; The absorbing layer contains a metal complex dye, the first colored layer has a region overlapping with the first electrode, the second colored layer has a region overlapping with the third electrode, the green light has a maximum at a first wavelength, the red light has a maximum at a second wavelength; the absorbing layer has an absorptance peak at least at a third wavelength longer than the first wavelength and shorter than the second wavelength, and at a fourth wavelength longer than the second wavelength; The display device, wherein the absorptance of the fourth wavelength is greater than the absorptance of the third wavelength.

2. A first electrode; a layer including a first light-emitting organic compound on the first electrode; a second electrode on the layer containing the first organic compound; and a first light-emitting element that emits red light in a direction above the second electrode; A third electrode; and a layer including a second light-emitting organic compound on the third electrode; a fourth electrode over the layer containing the second organic compound; and a second light-emitting element that emits green light in a direction above the fourth electrode. an absorbing layer disposed on the second electrode and on the fourth electrode; a first color layer and a second color layer disposed on the absorbent layer; the first electrode includes a first conductive film having a light-transmitting property and a second conductive film having a reflecting property and disposed under the first conductive film and in contact with the first conductive film; the third electrode includes a third conductive film having a light-transmitting property, and a fourth conductive film having a reflecting property and disposed under the third conductive film and in contact with the third conductive film; a distance between the second conductive film and the second electrode is different from a distance between the fourth conductive film and the fourth electrode; The absorbing layer includes a metal complex dye and a resin, the first colored layer has a region overlapping with the first electrode, the second colored layer has a region overlapping with the third electrode, the green light has a maximum at a first wavelength, the red light has a maximum at a second wavelength; the absorbing layer has an absorptance peak at least at a third wavelength longer than the first wavelength and shorter than the second wavelength, and at a fourth wavelength longer than the second wavelength; The display device, wherein the absorptance of the fourth wavelength is greater than the absorptance of the third wavelength.

3. In claim 1 or 2, The first light-emitting element includes a microresonator using the first electrode and the second electrode, The display device, wherein the second light-emitting element includes a microresonator using the third electrode and the fourth electrode.

4. In any one of claims 1 to 3, A display device, wherein an end of the second conductive film is located in an area beyond an outer edge of the first conductive film.

5. In any one of claims 1 to 4, A display device, wherein an end of the fourth conductive film is located in an area beyond an outer edge of the third conductive film.

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