BANK STRUCTURE, LIGHT EMITTING DISPLAY DEVICE INCLUDING BANK STRUCTURE, AND MANUFACTURING METHOD THEREOF

Abstract

To provide a light emitting display device that may change a structure between adjacent sub-pixels to solve the side leakage current.SOLUTION: A bank structure according to one embodiment of the present invention comprises: a first region which surrounds a first light emitting part that emits light in a first color and has a first height; a second region which surrounds a second light emitting part that emits light in a second color and has the first height; a plurality of slits parallel to each other between the first region and the second region; an isolated protrusion pattern between the plurality of slits and having a second height higher than the first height; a third region which is connected to the first region, has the second height and comes into contact with one of the plurality of slits; and a fourth region which is connected to the second region, has the second height and comes into contact with a different slit from the slit with which the third region comes into contact.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a display device, and to a bank structure that can prevent leakage current between adjacent sub-pixels by changing a structure, a light-emitting display device including the bank structure, and a method for manufacturing the same. [Background technology]

[0002] As we enter the information age, the field of displays that visually represent electrical information signals is rapidly developing, and accordingly, various display devices with excellent performance, such as being thin, lightweight, and consuming less power, are being developed.

[0003] Among these, light emitting display devices that do not require a separate light source and have light emitting elements within the display panel are considered to be a competitive application in order to make the device more compact and provide a clear color display.

[0004] The light-emitting element includes an anode and a cathode facing each other as electrodes, a light-emitting layer between the anode and the cathode, and may include a common layer for transporting holes and electrons to the light-emitting layer.

[0005] A layer having a high mobility among the common layers can cause leakage current between adjacent subpixels, and efforts to solve this problem have been made. Summary of the Invention [Problem to be solved by the invention]

[0006] A common layer is provided continuously for multiple sub-pixels, but the common layer with high mobility causes side leakage current between adjacent sub-pixels. If the side leakage current is too high, a sub-pixel driven at a low gray level may cause an adjacent sub-pixel in the off state to emit light, resulting in color leakage.

[0007] The present invention is directed to solving this problem, and relates to a light emitting display device that can solve the side leakage current by changing a structure between adjacent sub-pixels. [Means for solving the problem]

[0008] The present invention relates to a bank structure, a light emitting display device including the bank structure, and a method for manufacturing the same. A bank structure according to one embodiment of the present invention may include a first region surrounding a first light-emitting portion emitting a first color and having a first height; a second region surrounding a second light-emitting portion emitting a second color and having a first height; a plurality of slits parallel to each other between the first region and the second region; an isolated protrusion pattern having a second height higher than the first height and located between the plurality of slits; a third region connected to the first region, having the second height, and adjacent to one of the plurality of slits; and a fourth region connected to the second region, having the second height, and adjacent to a slit different from the slit adjacent to the third region. Effect of the Invention

[0009] The present invention relates to a bank structure, a light emitting display device including the bank structure, and a method for manufacturing the same.

[0010] The bank structure, the light-emitting display device including the bank structure, and the manufacturing method thereof of the present invention can form a bank structure having three or more steps using one mask, and can effectively prevent side leakage current between adjacent light-emitting portions.

[0011] An isolated protrusion pattern having a high side inclination angle is formed between the slits at the center of the bank structure according to the width of the light-shielding portion of the mask and the thickness of the photosensitive material, and a thin intermediate layer is laminated on the isolated protrusion pattern due to the step coverage characteristics, thereby preventing side leakage current and further doubling the effect of preventing color leakage at low gradations.

[0012] In addition, compared to known methods that require multiple masks to form a bank structure by forming a slit or trench structure separately after forming the bank, this method has the advantage of enabling process optimization by reducing the number of masks, reducing the use of hazardous materials, and reducing production energy, which is environmentally friendly, has the advantages of low power consumption and process optimization, and has an ESG (Environment / Social / Governance) effect. [Brief description of the drawings]

[0013] [Figure 1] 1 is a block diagram illustrating a light emitting display device according to an embodiment of the present invention; [Diagram 2] FIG. 2 is a plan view showing region A in FIG. [Figure 3A] 3 is a cross-sectional view taken along line II' of FIG. 2 according to various embodiments. [Figure 3B] 3 is a cross-sectional view taken along line II' of FIG. 2 according to various embodiments. [Figure 3C] 3 is a cross-sectional view taken along line II' of FIG. 2 according to various embodiments. [Figure 3D] 3 is a cross-sectional view taken along line II' of FIG. 2 according to various embodiments. [Figure 4] 2. FIG. 3 is a cross-sectional view taken along line II-II' in FIG. [Diagram 5] 1 is a cross-sectional view showing a light emitting structure according to an embodiment of the present invention; [Figure 6A] 6 is an enlarged cross-sectional view of a region B in FIG. 5 according to the first embodiment. [Figure 6B] 6 is an enlarged cross-sectional view of a region C in FIG. 5 according to the first embodiment. [Figure 7A] 6 is an enlarged cross-sectional view of region B of FIG. 5 according to the second embodiment. [Figure 7B] 6 is an enlarged cross-sectional view of a region C in FIG. 5 according to the second embodiment. [Figure 8] 3A to 3C are cross-sectional views showing steps for manufacturing a bank structure of a light-emitting display device according to the present invention. [Figure 9] 1 is a cross-sectional photograph of a bank structure manufactured according to an experimental example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The same reference numerals throughout the specification refer to substantially the same components. In the following description, if a specific description of a technology or configuration related to the present invention is deemed to unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Note that the names of components used in the following description have been selected in consideration of ease of specification writing and may differ from the part names of actual products.

[0015] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for illustrating various embodiments of the present invention are illustrative, and the present invention is not limited to the matters shown in the drawings. The same reference numbers refer to the same components throughout this specification. In the description of the present invention, if it is determined that a specific description of related known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When "including," "having," "consisting of," etc. are used in this specification, other parts may be added unless "only" is used. When a component is expressed in the singular, it includes the case where it includes a plurality unless otherwise explicitly stated.

[0016] When interpreting the components included in various embodiments of the present invention, it is understood that a margin of error is included unless otherwise expressly stated.

[0017] In describing various embodiments of the present invention, when describing a positional relationship between two parts, for example, by using "above," "upper," "lower," "next to," etc., one or more other parts may be located between the two parts, unless "to the right" or "directly" is used.

[0018] In describing various embodiments of the present invention, when describing a temporal relationship, for example, when a temporal precedence relationship is described using "after," "following," "next to," "before," etc., non-consecutive cases may be included unless "immediately" or "directly" is used.

[0019] In describing various embodiments of the present invention, the terms "first", "second", etc. may be used to describe various components, but these terms are used only to distinguish between identical and similar components. Therefore, a component modified as "first" in this specification may be the same as a component modified as "second" within the technical spirit of the present invention, unless otherwise specified.

[0020] The features of the various embodiments of the present invention may be partially or fully combined or combined with each other, may be technically linked and operated in various ways, and the various embodiments may be implemented independently of each other or may be implemented together in relation to each other.

[0021] In this specification, "doped" means that a material having different physical properties from the material that occupies the majority of the weight ratio of a certain layer (physical properties different from each other include, for example, N-type and P-type, organic and inorganic materials) are added at a weight ratio of less than 30%. In other words, a "doped" layer means a layer in which the host material and the dopant material of a certain layer can be separated in consideration of the specific gravity of the weight ratio. And "undoped" refers to all cases other than the case of being doped. For example, if a certain layer is composed of a single material or is composed of a mixture of similar materials having the same properties, the layer is included in the "undoped" layer. For example, if at least one of the materials that make up a certain layer is P-type and all of the materials that make up the layer are not N-type, the layer is included in the "undoped" layer. For example, if at least one of the materials that make up a certain layer is an organic material and all of the materials that make up the layer are not inorganic materials, the layer is included in the "undoped" layer. For example, if all of the host materials constituting a layer are organic materials and at least one of the materials constituting the layer is N-type and at least one of the materials is P-type, the layer is considered "doped" if it contains less than 30% N-type material by weight or less than 30% P-type material by weight.

[0022] Hereinafter, a bank structure, a light emitting display device including the bank structure, and a manufacturing method thereof according to the present invention will be described with reference to the accompanying drawings.

[0023] Hereinafter, a light emitting display device according to the present invention will be described with reference to the drawings.

[0024] FIG. 1 is a block diagram illustrating a light emitting display device according to the present invention.

[0025] As shown in FIG. 1, an organic light emitting display device 10 according to an embodiment of the present invention may include a display panel 11, an image processor 12, a timing controller 13, a data driver 14, a scan driver 15, and a power supply 16.

[0026] The display panel 11 may display an image in response to a data signal DATA supplied from a data driver 14 , a scan signal supplied from a scan driver 15 , and a power supply supplied from a power supply unit 16 .

[0027] The display panel 11 may include sub-pixels SP arranged at each intersection of a plurality of gate lines GL and a plurality of data lines DL. The structure of the sub-pixels SP may be variously changed depending on the type of the light emitting display device.

[0028] For example, the subpixels SP may be formed in a top emission mode, a bottom emission mode, or a dual emission mode depending on the structure. The subpixels SP are units that can emit their own colors by forming a specific type of color filter or by having a light-emitting portion without forming a color filter. For example, the subpixels SP may include a red subpixel, a green subpixel, and a blue subpixel. Alternatively, the subpixels SP may include a red subpixel, a blue subpixel, a white subpixel, and a green subpixel, as an example. The subpixels SP may have one or more other light-emitting areas depending on the light-emitting characteristics. For example, a subpixel that emits a color different from that of a blue subpixel may have a different light-emitting area.

[0029] One or more subpixels SP may form one unit pixel. For example, one unit pixel may include red, green, and blue subpixels, and the red, green, and blue subpixels may be arranged repeatedly. Alternatively, one unit pixel may include red, green, blue, and white subpixels, and the red, green, blue, and white subpixels may be arranged repeatedly, or the red, green, blue, and white subpixels may be arranged as a quad type. In the embodiments according to the present specification, the color type, arrangement type, arrangement order, etc. of the subpixels may be configured in various forms depending on the light emitting characteristics, the life of the element, the specifications of the device, etc., but are not limited thereto.

[0030] The display panel 11 may be divided into a display area AA in which sub-pixels SP are arranged to display an image, and a non-display area NA around the display area AA. The scan driver 15 may be mounted in the non-display area NA of the display panel 11. The non-display area NA may also include a pad section PAD including pad electrodes PD.

[0031] The display panel 11 may, for example, include a substrate and an array arrangement formed on the substrate.

[0032] The video processor 12 may output a data enable signal DE and the like in addition to the data signal DATA supplied from the outside. In addition to the data enable signal DE, the video processor 12 may output one or more of a vertical sync signal, a horizontal sync signal, and a clock signal, but illustrations of these signals are omitted for convenience of explanation.

[0033] The timing controller 13 may be supplied with a data signal DATA together with the driving signal from the image processor 12. The driving signal may include a data enable signal DE. Alternatively, the driving signal may include a vertical sync signal, a horizontal sync signal, and a clock signal. The timing controller 13 may output a data timing control signal DDC for controlling the operation timing of the data driver 14 and a gate timing control signal GDC for controlling the operation timing of the scan driver 15 based on the driving signal.

[0034] The data driver 14 may sample and latch the data signal DATA supplied from the timing controller 13 in response to a data timing control signal DDC supplied from the timing controller 13, convert the data signal DATA into a gamma reference voltage, and output the voltage.

[0035] The data driver 14 may output a data signal DATA through the data line DL. The data driver 14 may be implemented in the form of an IC (Integrated Circuit). For example, the data driver 14 may be electrically connected to a pad electrode PD disposed in the non-display area NA of the display panel 11 via a flexible circuit film (not shown).

[0036] The scan driver 15 may output a scan signal in response to a gate timing control signal GDC supplied from the timing controller 13. The scan driver 15 may output a scan signal through a gate line GL. The scan driver 15 may be implemented in the form of an integrated circuit (IC) or in the form of a gate in panel (GIP) in the display panel 11.

[0037] The power supply unit 16 may output a high potential voltage, a low potential voltage, etc. for driving the display panel 11. The power supply unit 16 may supply a high potential voltage to the display panel 11 via a first power supply line EVDD (a driving power supply line or a pixel power supply line) and may supply a low potential voltage to the display panel 11 via a second power supply line EVSS (an auxiliary power supply line or a common power supply line).

[0038] The display panel 11 is divided into a display area AA and a non-display area NA, and may include a plurality of sub-pixels SP defined by gate lines GL and data lines DL that are intersecting each other and formed in a matrix within the display area AA.

[0039] The sub-pixels SP may include sub-pixels that emit at least two of red light, green light, blue light, yellow light, magenta light, and cyan light. In addition, the sub-pixels SP may be formed with a specific type of color filter or may emit their own color without a color filter. However, the present invention is not necessarily limited thereto, and the sub-pixels SP may be configured in various forms in terms of color type, arrangement type, and arrangement order depending on the light-emitting characteristics, element life, device specifications, and the like.

[0040] On the other hand, a phenomenon may be observed in which the emission of one of the adjacent sub-pixels causes the adjacent sub-pixel to emit light due to side leakage current. Such side leakage current may become noticeable in low grayscale driving.

[0041] The light emitting display device of the present invention provides various structures and methods for increasing the resistance in a functional layer having high mobility by changing the structure of the bank structure to increase the number of paths between adjacent sub-pixels (light emitting portions). When the bank structure increases the number of paths between adjacent sub-pixels, color leakage due to leakage current can be prevented.

[0042] For this purpose, the bank structure, the light-emitting display device, and the manufacturing method thereof of the present invention will be described.

[0043] Fig. 2 is a plan view showing region A in Fig. 1. Figs. 3A to 3D are cross-sectional views taken along line I-I' in Fig. 2 according to various embodiments. Fig. 4 is a cross-sectional view taken along line II-II' in Fig. 2.

[0044] The bank structure BNK according to an embodiment of the present invention is a kind of pixel definition film, which exposes a plurality of light emitting parts EM1, EM2, and EM3. The bank structure BNK of the light emitting display device according to the present invention has a patterned structure having a plurality of projections and recesses in the non-light emitting part NEM between the light emitting parts EM1, EM2, and EM3. In addition, the bank structure BNK according to the present invention is provided to have at least three or more heights between the light emitting parts by multiple sections of one mask, which is different from a conventional bank structure having a flat upper surface between the light emitting parts.

[0045] Each of the light emitting portions EM1, EM2, and EM3 may be included in a pixel or a subpixel. The bank structure BNK is located between the pixels. Referring to FIG. 2, the pixel may have the same positions as the light emitting portions EM1, EM2, and EM3 shown in FIG. 2.

[0046] In Fig. 2, the bank material layer 205 is located between each pixel. Fig. 2 shows five pixels located below the spacer 240 and three pixels located above the spacer 240 with respect to the spacer 240. The spacer 240 is provided at a predetermined position on the substrate to provide a support function for one or more masks during the manufacturing process. The spacer 240 may have a fourth height H4 as shown in Fig. 4. The fourth height H4 of the spacer 240 in the bank structure BNK may be the highest due to the support function for the mask.

[0047] The light emitting display device may be formed on a master substrate having a plurality of unit panels on which one light emitting display device is formed. The spacer 240 may have a support function for a mask provided for deposition of a light emitting element, a cathode, a capping layer, etc. during a manufacturing step, and may have a function of protecting a structure below the spacer 240.

[0048] 3A to 3D, the first light-emitting portion EM1 and the second light-emitting portion EM2 are parts of two different pixels, and the bank structure BNK is located between the other pixels. The first to third anodes 310a, 310b, and 310c are provided so as to overlap the first to third light-emitting portions EM1, EM2, and EM3, respectively, and the first to third anodes 310a, 310b, and 310c overlap the bank structure BNK at a portion OR formed by extending upward further than the first to third light-emitting portions EM1, EM2, and EM3.

[0049] Each of the light emitting sections EM1, EM2, EM3 includes a light emitting element ED including an anode 310a, 310b, 310c, a cathode 330 facing the anode 310a, 310b, 310c, and an intermediate layer 320 provided between the cathode 330 and the anode 310a, 310b, 310c.

[0050] The intermediate layer 320 includes multiple functional layers, and may include, for example, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. The intermediate layer 320 may be multiple organic films. In some cases, the intermediate layer 320 may include an inorganic dopant therein to increase the efficiency of the light emitting element. When a layer included in the intermediate layer 320 is formed continuously for multiple light emitting portions EM1, EM2, and EM3, this may be called a common layer.

[0051] The intermediate layer 320 may be provided in a stack structure including multiple light-emitting layers. Each stack may include at least one light-emitting layer, and the stacks may be differentiated by charge generation layers. The charge generation layers may include an n-type charge generation layer and a p-type charge generation layer. In this specification, the intermediate layer 320 having a multiple stack structure is also referred to as an "emissive layer stack."

[0052] The bank structure BNK of the first light emitting unit EM1 and the second light emitting unit EM2 will be described in detail with reference to Figures 2 to 4. Hereinafter, the light emitting structure BNK according to the embodiment and the light emitting display device including the same will be described first with reference to Figures 2, 3A, and 4.

[0053] The bank structure BNK may include a first region 205a surrounding a first light-emitting unit EM1 emitting a first color and having a first height H1, a second region 205b surrounding a second light-emitting unit EM2 emitting a second color and having a first height H1, and one or more slits SL1, SL2 (spaces) between the first region 205a and the second region 205b. Between the first light-emitting units EM1, EM2, the slits SL1, SL2 may be arranged parallel to each other. Also, as shown in FIG. 3A, the bank structure BNK may further include an isolated protruding pattern 220 located between the plurality of slits SL1, SL2.

[0054] As shown in FIGS. 3A and 3C, the isolated protruding pattern 220 may have a third height H3 that is higher than the first height H1 of the first and second regions 205a and 205b adjacent to the first and second light emitting portions EM1 and EM2.

[0055] The bank structure BNK may also include a third region 230 connected to the first region 205a, having a second height H2, and in contact with one of the slits SL2, and a fourth region 210 connected to the second region 205b, having the second height H2, and in contact with a slit SL1 different from the slit SL2 with which the third region 230 is in contact. The second height H2 may be greater than the first region 205a continuous with the third region 230 and the second region 205b continuous with the fourth region 210.

[0056] The third height H3 of the isolated protruding pattern 220 may be equal to or greater than the second height H2.

[0057] The first light-emitting portion EM1 and the second light-emitting portion EM2 may be parallel to each other along a first direction (the Y-axis in FIG. 2), and the plurality of slits SL1 and SL2 may be provided along the first direction (the Y-axis).

[0058] In this specification, the slits SL1 and SL2 may be referred to as "spaces." A slit (space) refers to a three-dimensional region in the bank structure BNK where the bank material layer 205 is empty in the X and Y directions shown in Fig. 2 and the Z direction (height direction) in Figs. 3A to 3D and 4.

[0059] 2, when moving from the first light-emitting unit EM1 to the isolated protruding pattern 220, the first region 205a, the third region 230, the slit SL2, and the isolated protruding pattern 220 appear in that order. When moving from the second light-emitting unit EM2 to the isolated protruding pattern 220 in the X-axis direction, the second region 205b, the fourth region 210, the slit SL1, and the isolated protruding pattern 220 appear in that order in the same way.

[0060] That is, between the first light emitting unit EM1 and the second light emitting unit EM2, the first region 205a having a height, the third region 230, the slit SL2, the isolated protruding pattern 220, the slit SL1, the fourth region 210, and the second region 205b appear in this order in the X direction. Such a bank structure BNK generates a plurality of uneven structures between the adjacent first and second light emitting units EM1 and EM2, and the resistance of the path through the intermediate layer 320 is increased by the structure, so that the side leakage current in the intermediate layer 320 can be reduced or prevented. Therefore, the low gradation color leakage phenomenon caused by the side leakage current of the common layer can be minimized. Therefore, even if the common layer of the light emitting element ED has a high mobility, it travels along the long path of the bank structure BNK between the first and second light emitting units EM1 and EM2 and receives a large resistance, so that the influence of the side leakage current between the first light emitting unit EM1 and the second light emitting unit EM2 can be prevented or reduced.

[0061] Structurally, in the third region 230, the isolated protruding pattern 220, and the fourth region 210, the interior angles α2, β2, β1, and α1 formed by the inclined side surfaces adjacent to the slits SL1 and SL2 and the surface of the planarizing film 110 are large angles of approximately 55° or more. In addition, in the third region 230, the isolated protruding pattern 220, and the fourth region 210, the interior angles α2, β2, β1, and α1 formed by the inclined side surfaces adjacent to the slits SL1 and SL2 and the surface of the planarizing film 110 are preferably approximately 55° or more and 75° or less.

[0062] The planarizing film 110 is used as a base layer on which the bank structure BNK is formed, and the surface of the planarizing film 110 is used as a surface on which the bank structure BNK is formed.

[0063] Preferably, when the interior angles β2, β1 of the inclined side surface of the isolated protruding pattern 220 located between the slits SL1, SL2 are 65° or more and 75° or less, the stability of the isolated protruding pattern 220 in maintaining the pattern height is increased, so the interior angles β2, β1 of the inclined side surface of the isolated protruding pattern 220 may be 65° or more and 75° or less. In a preferred embodiment, the interior angles β2, β1 of the inclined side surface of the isolated protruding pattern 220 may be 70°+5° including the process tolerance range. In yet another embodiment, the interior angles β2, β1 of the inclined side surface of the isolated protruding pattern 220 may be 70° or more and 80° or less.

[0064] Therefore, the inner angles β2, β1 of the inclined side surfaces of the isolated protruding pattern 220 of the bank structure BNK may be set to 55° or more and 80° or less.

[0065] The inner angles β2 and β1 of the inclined side surface of the isolated protruding pattern 220 of the bank structure BNK may be obtained during the process of forming the bank structure BNK. For example, the inner angles β2 and β1 of the inclined side surface of the isolated protruding pattern 220 of the bank structure BNK may be obtained by an etching process and / or an ashing process. In the bank structure BNK of the present invention, each layer of the intermediate layer 320 formed with linearity is thinly stacked with the third region 230 having a high-angled inclined side surface, the isolated protruding pattern 220, the fourth region 210, and the spacer 240, so that some layers of the intermediate layer 320 are cut or formed thin, and the resistance between the adjacent first and second light emitting parts EM1 and EM2 in the corresponding layers can be increased to prevent or minimize side leakage current. Since the isolated protruding pattern 220 has steep inner angles β2, β1 of the side inclined surfaces and has a large height, the light emitting layer stack 320 may have a smaller thickness on the sidewall (side inclined surface) of the isolated protruding pattern 220 than the first and second light emitting portions EM1, EM2. The intermediate layer 320' (light emitting layer stack) on the sidewall of the isolated protruding pattern 220 does not emit light because the anode 310 is not provided at that position and no electric field is generated directly thereon.

[0066] The leakage current between pixels is greatly reduced for the following reasons. First, the high and low regions of the bank structure BNK between pixels are more tortuous and provide a longer migration path, so the migration path between pixels is longer and all resistances in the corresponding path between pixels are greatly increased. The larger the second height H2 and the third height H3, the larger the migration path between pixels. In the bank structure BNK, the isolated protruding pattern 220 has a symmetrical structure with respect to the center and has the third region 230 and the fourth region 210 spaced apart on both sides of the isolated protruding pattern 220, so that on the bank structure BNK, the intermediate layers 320, 320' move from bottom to top along the surface of the bank structure BNK, and then move from top to bottom repeatedly, so that the migration path of the intermediate layer 320 increases to twice the extended height of the bank structure BNK.

[0067] Second, in general, the thinner the intermediate layer 320, the higher the resistance. Since the intermediate layer 320' on the sidewalls of the isolated protruding pattern 220 and the third and fourth regions 230 and 210 is thinner than the intermediate layer 320 on the light emitting units EM1 and EM2, the resistance of the intermediate layer 320' on the bank structure BNK increases, which increases the total resistance of the leakage current between adjacent pixels.

[0068] As shown in FIG. 3A, the isolated protrusion pattern 220 in the bank structure BNK may have a flat portion on its surface and may form a trapezoid or a triangle with rounded ends when viewed in cross section, although the bank structure of the present invention is not limited thereto.

[0069] Meanwhile, in the above description, the bank structure BNK between the first and second light emitting sections EM1 and EM2 has been described, but the bank structure BNK between the first light emitting section EM1 and the third light emitting section EM3 has a similar structure.

[0070] As shown in FIG. 2, in an emissive display device according to one embodiment, the second light-emitting section EM2 and the third light-emitting section EM3 are arranged alternately in the same column, and the second and third light-emitting sections EM2 and EM3, which are adjacent to each other vertically, are adjacent to one first light-emitting section EM1 horizontally.

[0071] The second region 205b, the isolated protruding pattern 220, and the fourth region 210 are provided along the long side (Y direction) of the first light-emitting unit EM1, and may have an edge E extending from the outer side of the long side of the first light-emitting unit.

[0072] The width of the bottom surface of the isolated protruding pattern 220 may be equal to or smaller than the width of the slits SL1, SL2. This is because the width of the slits SL1, SL2 may be limited so that the isolated protruding pattern 220 has a sufficient height.

[0073] The second light-emitting portion EM2 and the third light-emitting portion EM3 may be disposed along the longitudinal direction of the slits SL1 and SL2.

[0074] Meanwhile, the second interior angles β2, β1 between the isolated protruding pattern 220 and the surface of the planarization film 110 located in the non-light-emitting portion may be larger than the first interior angles α2, α1 between the third region 230 and the fourth region 210 and the surface of the planarization film 110 located in the non-light-emitting portion NEM. The first interior angles α2, α1 may be 55° to 65°. The second interior angles β2, β1 may be 65° to 75°. In another embodiment of the present specification, the second interior angles (β2, β1) may be 55° to 80°. This is because the width of the isolated protruding pattern 220 is narrowed so that the isolated protruding pattern 220 has a high height, and the third region 230 and the fourth region 210 are formed with a wider width so that the height is stabilized around the slits SL1, SL2.

[0075] Meanwhile, similar to Figs. 3A to 3D, the light emitting display device of the present invention includes a thin film transistor TFT between the substrate 100 and the light emitting element ED. The thin film transistor TFT is provided for driving the light emitting parts EM1, EM2, and EM3 for each pixel. To drive each pixel, the thin film transistor TFT may include a switching transistor, a driving transistor, etc., within one pixel, and may include a capacitor or other components for connection between components. The bank structure BNK is located in the non-light emitting part NEM between the pixels.

[0076] The light-emitting display device according to the embodiment shown in FIG. 3B has a bank structure BNK including first bank portions 205a, 205b adjacent to light-emitting portions (pixels) EM1, EM2, second bank portions 210, 230 continuous with one side of the first bank portions 205a, 205b not adjacent to the light-emitting portions EM1, EM2, and a space located between the second bank portions 210, 230 spaced apart from each other.

[0077] The first bank portions 205a, 205b and the second bank portions 210, 230 of the bank structure BNK may be formed in the same manner using a bank material layer 205.

[0078] In the space, the planarization film 110 having a protection function for the thin film transistor TFT is exposed. In the space, the intermediate layer 320 may be provided in direct contact with the planarization film 110. The planarization film 110 is provided continuously on the first and second light emitting portions EM1, EM2 and the non-light emitting portion NEM between the first and second light emitting portions EM1, EM2.

[0079] The intermediate layer 320 on the spacer and the intermediate layer 320 on the first and second light emitting units EM1 and EM2 may have approximately the same thickness. The thin thickness of the intermediate layer 320 located on the sidewalls of the second bank units 210 and 230 of the bank structure may increase the overall resistance between the first and second light emitting units EM1 and EM2. In the embodiment of FIG. 3B, the isolated protruding pattern 220 is not provided. The second height H2 of the second bank units 210 and 230 may be the same as the fourth height H4 of the spacer (240 in FIG. 4). In addition, the interior angles α2 and α1 between the side inclined surfaces of the second bank units 210 and 230 and the surface of the planarization film 110 may be in the range of the second interior angles β2 and β1 described in the embodiment of FIG. 3A. For example, in the embodiment of FIG. 3B, the interior angles α2 and α1 between the side inclined surfaces of the second bank units 210 and 230 and the surface of the planarization film 110 may be 55° to 80°. At least one layer included in the intermediate layer 320 may have poor step coverage characteristics due to the high inclination angle of the inclined surface of the second bank portion 210, 230. Therefore, the intermediate layer 320' on the side surface of the second bank portion 210, 230 is formed to a small thickness, and the intermediate layer 320' on the inclined side surface of the second bank portion 210, 230 may have little or no conductivity. In some embodiments, the intermediate layer 320' on the inclined side surface of the second bank portion 210, 230 may be so thin that it is hardly deposited, and a current path may not be formed between pixels. In the structure of the embodiment of FIG. 3B, if electrical isolation can be created between adjacent second bank portions 210, 230 between pixels by only a space, an isolated protrusion pattern may not be necessary.

[0080] Comparing the first height H1 of the first bank portions 205a, 205b in Fig. 3B and the second height H2 of the second bank portions 210, 230 in Fig. 4 with the fourth height H4 of the spacer 240 in Fig. 4, there is a relationship of H4 ≧ H2 > H1. The spacer 240 may be formed simultaneously with the bank structure BNK in Fig. 3B or may be formed separately.

[0081] 3C has first bank portions 205a, 205b adjacent to light emitting portions (pixels) EM1, EM2 of first regions 205a, 205b, and a bank structure BNK including second bank portions 210, 230 continuous with one side of the first bank portions 205a, 205b not adjacent to the light emitting portions EM1, EM2, a space between the second bank portions 210, 230 spaced apart from each other, and an isolated protruding pattern 220 (third bank portion) spaced apart from each of the second bank portions 210, 230. A first slit SL1 (space) is provided between the second bank portion 210 and the isolated protruding pattern 220 on one side, and a second slit SL2 (space) is provided between the second bank portion 230 and the isolated protruding pattern 220 on the other side.

[0082] In the light emitting display device according to the embodiment of FIG. 3C, the second bank portions 210 and 230 have the same height as the first bank portions 205a and 205b, and the first bank portions 205a and 205b and the second bank portions 210 and 230 may have flat upper surfaces.

[0083] The first height H1 of the first bank parts 205a, 205b and the second height H2 of the second bank parts 210, 230 are the same, and the first and second heights H1, H2 are smaller than the third height H3 of each isolated protruding pattern 220 (H3>(H1=H2)). The third height H3 of the isolated protruding pattern 220 may be the same as the fourth height H4 of the spacer 240. In yet another embodiment, the third height H3 may be greater than the fourth height H4 to increase the current transfer path. Since the isolated protruding pattern 220 is formed with a narrow width, it has steep sidewalls, and therefore the intermediate layer 320' formed on the sidewalls of the isolated protruding pattern 220 may have poor step coverage and may be very thin or may not be provided on the sidewalls of the isolated protruding pattern 220 at all.

[0084] 3D has the first bank portions 205a, 205b, the second bank portions 210, 230, and the isolated protruding pattern 220 described in FIG. 3C, but the first height H1 of the first bank portions 205a, 205b, the second height H2 of the second bank portions 210, 230, and the third height H3 of the isolated protruding pattern 220 are equal (H3=H1=H2). Between the spaced apart second bank portions 210, 230, there are located first and second slits SL1, SL2, and the isolated protruding pattern 220 located between the first and second slits SL1, SL2.

[0085] The thicknesses of the intermediate layers 320, 320' in Figures 3A-3D may not be shown proportionally due to actual thickness variations. The layers included in the intermediate layers 320, 320' may have different thicknesses in different regions depending on the materials, temperature during deposition, and various other requirements during the deposition process in multiple layers.

[0086] In this specification, the intermediate layers 320, 320' between adjacent pixels have an increased path due to the non-flat structure of the surface of the bank structure BNK, and are characterized by having a smaller thickness than the light emitting parts EM1, EM2, EM3. The thin film transistor TFT includes a semiconductor layer 103, a gate electrode 106 overlapping the semiconductor layer 103 with a gate insulating film 105 interposed therebetween, and a source electrode 107 and a drain electrode 108 spaced apart from the gate electrode 106 and connected to both ends of the semiconductor layer 103.

[0087] The semiconductor layer 103 may include at least one of an oxide semiconductor, crystalline silicon, and amorphous silicon.

[0088] The semiconductor layer 103 may further include a light-shielding layer 101 to prevent light from being transmitted below the substrate 100 .

[0089] A buffer layer 102 may be further provided between the light-shielding layer 101 and the thin-film transistor TFT. The thin-film transistor TFT may be protected by an inorganic protective film 104 and an organic protective film 109 provided in this order.

[0090] A planarization film 110 may be provided on the organic protective film 109. The planarization film 110 is provided to cover the transistors of the pixels, and may also be called a protective film or a passivation film.

[0091] The buffer film 102 and the inorganic protective film 104 may be made of an inorganic insulating material, for example, an oxide film, a nitride film, or an oxynitride film.

[0092] The organic protective film 109 and the planarizing film 110 may be made of at least one of organic materials such as photo acryl, polyimide, benzo cyclobutene resin, and acrylate resin.

[0093] The bank structure BNK and the spacer 240 may be made of a photosensitive organic material that may be patterned by a direct exposure process with the same organic material. The photosensitive organic material may include photoacrylic, acrylate-based resin, and may include epoxy resin, etc.

[0094] At the slits SL1 and SL2 of the bank structure BNK, the planarizing film 110 may come into direct contact with the intermediate layer 320 deposited thereon.

[0095] The first light emitting unit EM1 is a light emitting unit that emits blue light, and has a light emitting element including a light emitting layer having an emission peak at, for example, 420 nm to 490 nm.

[0096] The second light emitting unit EM2 is a light emitting unit that emits green light, and has a light emitting element including a light emitting layer having an emission peak at, for example, 510 nm to 590 nm.

[0097] The third light emitting unit EM3 is a light emitting unit that emits red light, and has a light emitting element including a light emitting layer having an emission peak at, for example, 600 nm to 650 nm.

[0098] Between the first light-emitting unit EM1 and the third light-emitting unit EM3, the first region 205a, the third region 230, the slit SL2, the isolated protrusion pattern 220, the slit SL1, the fourth region 210, and the second region 205b are each continuous in the Y direction, and the multiple uneven structures provide a similar effect in preventing side leakage current between the first light-emitting unit EM1 and the second light-emitting unit EM2.

[0099] In order to enhance the effect of preventing side leakage current between the first light-emitting unit EM1 and the third light-emitting unit EM3, the first region 205a, the third region 230, the slit SL2, the isolated protrusion pattern 220, the slit SL1, the fourth region 210, and an edge E of the second region 205b may be provided on the end of one side of the third light-emitting unit EM3 adjacent to the first light-emitting unit EM1.

[0100] The edges E of the first region 205a, the third region 230, the slit SL2, the isolated protrusion pattern 220, the slit SL1, the fourth region 210, and the second region 205b may have a certain distance from the spacer 240 provided on the first region 205a surrounding the first light-emitting portion EM1 so as not to interfere with the spacer 240.

[0101] The first region 205a, the third region 230, the slit SL2, the isolated protrusion pattern 220, the slit SL1, the fourth region 210, and the second region 205b may have a bent portion at the corner portion of the first light-emitting portion EM1, so that the first region 205a has a shape that partially surrounds the corner portion of the first light-emitting portion EM1 at the outer edge of the first light-emitting portion EM1.

[0102] The bank structure BNK and the spacers 240 formed within the bank 205 may be obtained by patterning the bank 205 material with a mask.

[0103] The spacers 240 have a fourth height H4 formed together with the bank 205, and may be equal to or higher than the second height H2 of the third and fourth regions 230 and 210. This is because, when forming the spacers 240, the light-shielding portion of the mask is made to have an area larger than the isolated protruding pattern 220, so that a reduction in thickness due to loss of the photosensitive material due to interference in the area adjacent to the light-shielding portion can be prevented. In one embodiment, the fourth height H4 may be equal to or higher than each of the third height H3 of the isolated protruding pattern 220 and the second height H2 of the third and fourth regions 230 and 210.

[0104] On the other hand, the bank structure BNK increases the paths through which the intermediate layer 320 passes between adjacent light-emitting sections EM1->EM2 or EM1->EM3, which is effective in reducing side leakage current, so it is more effective to provide it between light-emitting sections that emit other colors.

[0105] However, the bank structure BNK of the present invention is not necessarily limited to having different colors between light emitting parts. The bank structure BNK may also be generated between light emitting parts that emit the same color (non-light emitting part: NE).

[0106] The first to third anodes EM1, EM2, and EM3 shown in FIG. 2 each have a protrusion 310p on one side. The protrusions 310p of the first to third anodes EM1, EM2, and EM3 may be used as connection sites with any of the electrodes of the thin-film transistors. However, the example shown in FIG. 2 is merely an example, and the first to third anodes EM1, EM2, and EM3 do not necessarily need to have the protrusions 310p. The first to third anodes EM1, EM2, and EM3 may be polygonal in shape without a protrusion. In this case, the thin-film transistors may be connected at least at any of the points of the polygonal first to third anodes EM1, EM2, and EM3.

[0107] If the first anode 310a has an outer protrusion 310p overlapping with the first light-emitting portion EM1, the bank structure BNK may bypass the exposed first anode protrusion 310p, omitting the slit SL2 at the bypass portion, and cover the first region 205a of the bank.

[0108] The bank structure BNK of the present invention is made of the same organic material and is simultaneously formed in one exposure process using a multi-tone mask. That is, the first to fourth regions 205a, 205b, 230, 210 and the isolated protrusion pattern 220 may contain the same organic material and have the same physical properties. The isolated protrusion pattern 220 is designed so that the inner angle between its edge and the planarization film 110 exposed by the slits SL1 and SL2 is 55° or more due to the interference phenomenon at the boundary between the light-shielding portion and the light-transmitting portion in the mask.

[0109] Fig. 5 is a cross-sectional view showing a bank structure according to an embodiment of the present invention. Fig. 6A is an enlarged cross-sectional view of region B of Fig. 5 according to a first embodiment, and Fig. 6B is an enlarged cross-sectional view of region C of Fig. 5 according to the first embodiment. Fig. 7A is an enlarged cross-sectional view of region B of Fig. 5 according to a second embodiment, and Fig. 7B is an enlarged cross-sectional view of region C of Fig. 5 according to the second embodiment.

[0110] In the bank structure BNK according to an embodiment of the present invention, the top surface of the isolated protruding pattern 220 may have a rounded shape without having a flat surface as shown in Figs. 8 and 9. This is because the shape of the isolated protruding pattern 220 can be controlled by adjusting the width of the light-shielding portion of the mask used to form the bank structure BNK. The height of the isolated protruding pattern 220 may also change due to the change in the light-shielding width. When the light-shielding width is large, the height of the isolated protruding pattern 220 is larger than the heights of the third region 230 and the fourth region 210. When the light-shielding width is small, the height of the isolated protruding pattern 220 may be equal to or smaller than the heights of the third region 230 and the fourth region 210.

[0111] 6A and 6B, the light-emitting element ED on the anode 310 includes, for example, an anode 310 and a cathode 330 facing each other, a hole injection layer HIL, a hole transport layer HTL, an emission layer EML, an electron transport layer ETL, and an electron injection layer EIL between the anode 310 and the cathode 330. The structure between the anode 310 and the cathode 330 is an intermediate layer 320 including a type of organic layer, inorganic layer, or hybrid layer. Each or a part of the layers HIL, HTL, EML, ETL, and EIL included in the intermediate layer 320 may be a common layer formed by an open mask without using a fine metal mask.

[0112] The thickness of the intermediate layer 320' provided on the inclined side surface of the isolated protrusion pattern 220 is formed to be thinner than that of the intermediate layer 320 on the anode 310 or the slit SL1 because the step coverage characteristic of the deposition material is poor at a high inclination angle.

[0113] Therefore, in the bank structure BNK of the present invention, as the physical irregularities of the multiple irregularities between the first to fourth regions 205a, 230, SL2, 220, SL1, 210, 205b between the first and second light emitting units EM1, EM2 become longer, the thickness becomes thinner on the sides of the isolated protruding pattern 220 and the third region 230 and the fourth region 210, doubling the effect of increasing resistance. Therefore, a remarkable effect is brought about in preventing side leakage current, and there is an effect of preventing low gradation color leakage.

[0114] 7A and 7B, the light-emitting element ED on the anode 310 may include, for example, an anode 310 and a cathode 330 facing each other, and a plurality of stacks S1, S2, ... and a charge generation layer CGL between the anode 310 and the cathode 330. Each stack includes a hole transport layer HTL, an emitting layer EML, an electron transport layer ETL, etc. The intermediate layer 320A included between the anode 310 and the cathode 330 may include a plurality of stacks S1, S2, ... and may include one or more common layers in the stacks. Also, the charge generation layer CGL is a common layer between the stacks S1, S2, ...

[0115] In the light emitting display device including the bank structure of the present invention, the thickness of the intermediate layer 320A' provided on the inclined side surface of the isolated protrusion pattern 220 is formed to be thinner than the intermediate layer on the anode 310 or on the slit SL1 because the step coverage characteristics of the deposition material are poor at high inclination angles.

[0116] Therefore, in the bank structure BNK of the present invention, as the physical irregularities of the multiple irregularities between the first to fourth regions 205a, 230, SL2, 220, SL1, 210, 205b between the first and second light emitting units EM1, EM2 become longer, the effect of the thickness becoming thinner and the resistance becoming larger at the side surfaces of the isolated protruding pattern 220 and the third region 230 and the fourth region 210 is doubled. Therefore, a remarkable effect is brought about in preventing side leakage current, and there is an effect of preventing low gradation color leakage.

[0117] A method for producing a light-emitting display device according to the present invention will now be described.

[0118] 8A to 8C are cross-sectional views showing the steps of manufacturing a bank structure of a light-emitting display device according to the present invention.

[0119] First, as shown in FIG. 2 and FIG. 3A to FIG. 3D, a substrate 100 including a planarization film 110 provided on the first light emitting portion EM1 and the second light emitting portion EM2 spaced apart from each other is prepared.

[0120] Next, a photosensitive material is applied onto the planarizing film 110 .

[0121] A mask 400 including a first semi-transmitting portion 430a and a second semi-transmitting portion 430b corresponding to the furthest positions of the first and second light-emitting portions EM1 and EM2, three or more spaced-apart light-shielding portions 420a, 420b, 420c between the first and second semi-transmitting portions 430a, 430b, and first and second transmitting portions 410a, 410b between the three spaced-apart light-shielding portions 420a, 420b, 420c, is made to correspond to a photosensitive material.

[0122] Next, the photosensitive material is exposed through the first and second semi-transmitting portions 430a, 430b and the first and second transmitting portions 410a, 410b of the mask 400 to form an isolated protrusion pattern 220 separated by a light-shielding portion 420b between the adjacent first and second transmitting portions 410a, 410b, slits SL1, SL2 corresponding to the first and second transmitting portions 410a, 410b, and a bank structure BNK including a region having a double height corresponding to the first and second semi-transmitting portions 430a, 430b.

[0123] The bank structure BNK formed using the mask 400 may have first bank portions 205a, 205b of a first height H1 corresponding to the first and second semi-transmitting portions 430a, 430b, and may have second bank portions 210, 230 of a second height H2 corresponding to the light-shielding portions 420a, 420c. Also, an isolated protruding pattern 220 (third bank portion) having a narrow width and a third height H3 may be provided corresponding to another light-shielding portion 420b between the light-shielding portions 420a, 420c.

[0124] In the same process of forming the bank structure BNK, the mask 400 may be provided with an additional light-shielding portion 420d, and the spacer 240 may be formed with a fourth height H4 corresponding to the additional light-shielding portion 420d. Although FIG. 8 illustrates the bank structure BNK and the spacer 240 being formed in the same process, the spacer 240 may be formed separately after the bank structure BNK is formed. The first semi-transmitting portion 430a and the third semi-transmitting portion 430c are located around the additional light-shielding portion 420, and the isolated protruding pattern 220 is slightly reduced in height due to the diffraction interference effect at the boundary between the second light-shielding portion 420b and the surrounding first and second transmissive portions 410a and 410b, whereas the spacer 240 formation portion may maintain the thickness H3 of the initially applied photosensitive material, so that the spacer 240 may be formed on the planarization film 110 to be thicker than the remaining bank structure BNK. In FIG. 8, the bank structure has been described based on a positive type photosensitive material, but if the bank structure is a negative type photosensitive material, the light-shielding portions 420c, 420d may be configured as openings and the first and second transparent portions 410a, 410b may be configured as light-shielding portions, that is, the configuration may be reversed.

[0125] When forming slits SL1, SL2 or a trench shape in a bank structure, they may be formed by a dry etch process after a pattern using a photosensitive material, etc., but when the substrate 100 is large, the process dispersion of processes such as dry etching becomes larger by 10% or more, and the dispersion of the interior angles α2, β2, β1, α1 between the side inclined surfaces adjacent to the slits SL1, SL2 and the surface of the planarization film 110 and the interior angles between the bottom of the trench and the inclined surfaces in the trench shape of the bank structure may not be uniformly formed in the substrate 100, resulting in leakage current deviations in different regions. However, by using photolithography as shown in Figure 8 of the present invention, the angle of the inclined surfaces of the bank structure can be uniformly formed in the substrate 100, so that leakage current can be uniformly prevented throughout the substrate 100.

[0126] FIG. 9 is a cross-sectional photograph of a bank structure manufactured according to an example.

[0127] FIG. 9 shows a bank structure formed in a single exposure using the mask shown in FIG.

[0128] 9, the isolated protruding pattern 220 located at the center of the bank structure has a triangular shape with rounded ends when viewed in cross section, and the interior angles of the isolated protruding pattern 220 have high inclination angles of 68.6° and 67.8°. It may be confirmed that the interior angles α2 and α1 of the fourth region 210 and the third region 230 are 58.9° and 59°, respectively, and have different inclination angles. It may also be confirmed that the thickness of the third region 230 and the fourth region 210 separated from the isolated protruding pattern 220 by the slits is thicker than the light-emitting portion on the periphery of the bank structure and the adjacent bank portion.

[0129] The bank structure, the light-emitting display device including the bank structure, and the manufacturing method thereof of the present invention can form a bank structure having three or more steps using one mask, and can effectively prevent side leakage current between adjacent light-emitting portions.

[0130] An isolated protrusion pattern having a high side inclination angle is formed between the slits at the center of the bank structure according to the width of the light-shielding portion of the mask and the thickness of the photosensitive material, and a thin intermediate layer is laminated on the isolated protrusion pattern due to the step coverage characteristics, thereby further doubling the effect of preventing low gradation color leakage by preventing side leakage current.

[0131] In addition, compared to the known method in which a slit or trench structure is formed separately after the bank is formed and multiple masks are used for the bank structure, the number of masks can be reduced, which has the advantage of enabling process optimization, reducing the use of hazardous materials, and reducing production energy. This brings about ESG (Environment / Social / Governance) benefits with the advantages of being environmentally friendly, low power consumption, and process optimization.

[0132] A bank structure according to one embodiment of the present invention may include a first region surrounding a first light-emitting portion emitting a first color and having a first height, a second region surrounding a second light-emitting portion emitting a second color and having a first height, a plurality of slits parallel to each other between the first region and the second region, an isolated protrusion pattern located between the plurality of slits and having a second height higher than the first height, a third region connected to the first region, having a second height, and adjacent to one of the plurality of slits, and a fourth region connected to the second region, having the second height, and adjacent to a slit different from the slit adjacent to the third region.

[0133] The first light emitting portion and the second light emitting portion may be parallel to each other along a first direction, and the slit may be provided along the first direction.

[0134] The isolated protruding pattern in the first light emitting portion The first region, the third region, the slits and the isolated protrusion pattern may be provided in this order toward the first region.

[0135] The first region, the second region, the third region, the fourth region and the isolated protruding pattern may comprise the same organic material.

[0136] The second region, the isolated protruding pattern and the fourth region may be provided along a long side of the first light emitting portion and may have edges outside the long side of the first light emitting portion.

[0137] The second region, the isolated protruding pattern and the fourth region may each form an interior angle of 55° to 75° with a surface of the non-light-emitting portion.

[0138] The inner angles β2 and β1 of the inclined side surfaces of the isolated protruding pattern 220 may be in the range of 65° to 75°.

[0139] The second region and the fourth region may have different interior angles with a surface of the non-light-emitting portion and an interior angle with a surface of the non-light-emitting portion of the isolated protruding pattern. A width of a lower surface of the isolated protruding pattern may be equal to or smaller than a width of a slit.

[0140] A third light emitting portion adjacent to the second light emitting portion and emitting light of a third color may contact the second region.

[0141] The second light-emitting portion and the third light-emitting portion may be disposed along a longitudinal direction of the slit.

[0142] A second interior angle that the isolated protrusion pattern forms with a surface of the non-light-emitting portion may be larger than a first interior angle that the second region and the fourth region form with a surface of the non-light-emitting portion.

[0143] The first region may overlap a first anode, the second region may overlap a second anode, an edge of the first anode may be spaced apart from the second region, and an edge of the second anode may be spaced apart from the fourth region.

[0144] The first region may further include a spacer of a third height greater than the second height.

[0145] The first light emitting portion may emit blue light, and the second light emitting portion may emit green light or red light.

[0146] An organic light emitting display device according to an embodiment of the present invention may include a bank structure provided between first and second light emitting portions spaced apart from each other on a planarization layer, and light emitting elements provided in the first and second light emitting portions.

[0147] The light-emitting element includes at least one light-emitting layer, at least one common layer, and a cathode, and the common layer may be in contact with the planarization film at the slit.

[0148] The thickness of the light emitting element may be thinner on the surface of the isolated protruding pattern than on the slit.

[0149] In addition, an organic light emitting display device according to another embodiment of the present invention may include a first anode and a second anode spaced apart from each other, a bank structure exposing a first light emitting portion of the first anode and a second light emitting portion of the second anode, a first light emitting layer emitting a first color on the first anode and a second light emitting layer emitting a second color on the second anode, at least one common layer overlapping the first light emitting layer, the second light emitting layer and the bank structure, and a cathode on the common layer.

[0150] According to an embodiment of the present invention, a light emitting display device may include a substrate, a first pixel located on the substrate, a second pixel located on the substrate and spaced apart from the first pixel, a protective film provided on the substrate and extending between the first and second pixels, a bank layer located on the protective film and including a first bank portion adjacent to the first pixel and a second bank portion spaced apart from the first bank portion and adjacent to the second pixel, and a light emitting layer stack located on each of the first and second pixels and on the first and second bank portions and a space between the first bank portion and the second bank portion to expose the protective film. Each of the first bank portion and the second bank portion may have a sidewall adjacent to the space, and the light emitting layer stack may have a first thickness in the first pixel and the second pixel and a second thickness on each sidewall of the first and second bank portions that is thinner than the first thickness.

[0151] The bank layer may further include a third bank portion located on the protective film in a space between the first bank portion and the second bank portion, and may include a first space between the first bank portion and the third bank portion and a second space between the second bank portion and the third bank portion within the space.

[0152] The third bank portion may include a first sidewall adjacent to the first space and a second sidewall adjacent to the second space, and the light emitting layer stack may have a third thickness that is less than the second thickness on the first and second sidewalls.

[0153] The third bank portion may have a trapezoidal shape or a triangular shape with rounded edges when viewed in cross section.

[0154] The first bank portion is adjacent to the first pixel and has a first region of a first height and a second region of a second height adjacent to the space, and the second bank portion is adjacent to the second pixel and has a first region of the first height and a second region of the second height adjacent to the space, and in each of the first and second bank portions, the second height may be greater than the first height.

[0155] The light emitting layer stack may have the first thickness on a top surface of each of the first regions of the first bank portion.

[0156] The liquid crystal display may further include a third bank portion located on the protective film in a space between the first and second bank portions and having a third height greater than the first height.

[0157] The third height may be equal to or greater than the second height.

[0158] The first bank portion may have a first height, the second bank portion may have a second height, and the third bank portion may have a third height.

[0159] The first to third heights may be equal.

[0160] The first and second heights may be equal to one another, and the third height may be greater than each of the first and second heights.

[0161] The bank may further include a fourth bank portion spaced apart from the first to third bank portions and having a fourth height greater than each of the first to third heights.

[0162] The side walls of the first and second banks may form an interior angle of 55° to 75° with the protective film.

[0163] An inner angle of a sidewall of the third bank portion adjacent to the first and second spaces may be larger than each of inner angles of sidewalls of the first and second bank portions adjacent to the first and second spaces.

[0164] The inner angle of the sidewalls of the third bank portion adjacent to the first and second spaces may be 60° to 80°.

[0165] A method for manufacturing a light emitting display device according to one embodiment of the present invention may include the steps of: preparing a substrate having first and second light emitting portions spaced apart from each other; applying a photosensitive material to an entire surface of the substrate; associating a mask with the photosensitive material, the mask including a first semi-transmitting portion and a second semi-transmitting portion corresponding to ends of the first and second light emitting portions, respectively, a plurality of spaced apart three or more light shielding portions between the first and second semi-transmitting portions, the plurality of spaced apart three light shielding portions, and a transparent portion between the plurality of spaced apart three light shielding portions; and exposing the photosensitive material through the first and second semi-transmitting portions and the transparent portion of the mask to form an isolated protrusion pattern provided in the light shielding portions between adjacent transparent portions, a slit corresponding to the transparent portion, and a bank structure including a region having a double height corresponding to the first and second semi-transmitting portions.

[0166] The present invention described above is not limited to the above-mentioned embodiments and accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications and changes are possible without departing from the technical spirit of the present invention. [Explanation of symbols]

[0167] 100 Substrates TFT Thin Film Transistor 110 Planarization film BNK Bank Structure 205a 1st area 205b Second area 210 4th area 220 Isolated protruding pattern 230 Third area 240 Spacer 310, 310a, 310b, 310c anode 310p Anode protrusion EM1 First light emitting unit EM2 Second light emitting part EM3 3rd light emitting part 320 Middle Class 320' mid-layer on sides 330 Cathode 400 Mask 410 Transparent part 420 Shading part 430 Semi-transparent part

Claims

1. a first region surrounding a first light emitting portion that emits light of a first color and having a first height; a second region surrounding a second light emitting portion that emits light of a second color and having the first height; A plurality of slits parallel to each other between the first region and the second region; an isolated protruding pattern located between the plurality of slits and having a second height greater than the first height; a third region coupled to the first region, having the second height, and in contact with one of the plurality of slits; a fourth region connected to the second region, having the second height, and bordering a slit different from the slit bordered by the third region, the bank structure comprising:

2. The bank structure of claim 1 , wherein the first light emitting portion and the second light emitting portion are parallel to each other along a first direction, and the plurality of slits are provided along the first direction.

3. The bank structure of claim 1 , wherein the first region, the third region, the slit, and the isolated protruding pattern are sequentially provided from the first light emitting portion toward the isolated protruding pattern.

4. The bank structure according to claim 1 , wherein the first region, the second region, the third region, the fourth region and the isolated protrusion pattern comprise the same photosensitive organic material.

5. The bank structure of claim 1 , wherein the second region, the isolated protruding pattern and the fourth region are provided along a long side of the first light emitting portion and have edges outside the long side of the first light emitting portion.

6. 2. The bank structure according to claim 1, wherein the second region, the isolated protruding pattern and the fourth region each have an internal angle of 55° to 75° with a surface of the non-light-emitting portion.

7. The bank structure according to claim 1, wherein an inner angle of a side inclined surface of the isolated protrusion pattern is in the range of 65° to 75°.

8. The bank structure according to claim 1 , wherein the isolated protruding pattern has a trapezoidal cross section or a triangular cross section with rounded apexes.

9. The bank structure according to claim 1 , wherein a width of a lower surface of the isolated protruding pattern is equal to or smaller than a width of the slit.

10. The bank structure according to claim 1 , wherein a third light emitting portion adjacent to the second light emitting portion and emitting a third color is in contact with the second region.

11. The bank structure according to claim 1 , wherein the second light emitting portion and the third light emitting portion are arranged along a longitudinal direction of the slit.

12. The bank structure according to claim 1 , wherein a second interior angle that the isolated protruding pattern makes with a surface of the non-light-emitting portion is larger than a first interior angle that the second region and the fourth region make with a surface of the non-light-emitting portion.

13. the first region overlaps a first anode and the second region overlaps a second anode; 2. The bank structure of claim 1, wherein an edge of the first anode is spaced apart from the second region and an edge of the second anode is spaced apart from the fourth region.

14. The bank structure of claim 1 , further comprising a spacer in the first region having a third height greater than the second height.

15. the first light emitting unit emits blue light, The bank structure according to claim 1 , wherein the second light emitting portion emits green light or red light.

16. The bank structure according to any one of claims 1 to 15, provided between the first light emitting portion and the second light emitting portion spaced apart from each other on a planarization film; A light emitting display device comprising: a light emitting element provided in each of the first light emitting unit and the second light emitting unit.

17. The light-emitting element includes at least one light-emitting layer, at least one common layer, and a cathode; The light-emitting display device according to claim 16 , wherein the common layer is in contact with the planarizing film at the slit.

18. The light-emitting display device according to claim 16 , wherein a thickness of the light-emitting element on the surface of the isolated protruding pattern is thinner than a thickness of the light-emitting element on the slit.

19. a first anode and a second anode spaced apart from each other; a bank structure exposing a first light emitting portion of the first anode and a second light emitting portion of the second anode; a first light-emitting layer on the first anode, the first light-emitting layer emitting a first color; a second light-emitting layer on the second anode that emits light of a second color; at least one common layer overlapping the first light-emitting layer, the second light-emitting layer and the bank structure; a cathode on said common layer; The bank structure is a first region surrounding the first light emitting portion that emits light of a first color and having a first height; a second region surrounding the second light emitting portion that emits light of a second color and having the first height; A plurality of slits parallel to each other between the first region and the second region; an isolated protruding pattern located between the plurality of slits and having a second height greater than the first height; a third region connected to the first region, having the second height, and in contact with one of the plurality of slits; a fourth region connected to the second region, having the second height, and in contact with a slit different from a slit in contact with the third region.

20. The light emitting display device of claim 19 , wherein the first region, the second region, the third region, the fourth region, and the isolated protrusion pattern include a same photosensitive organic material.

21. 20. The light emitting display device according to claim 19, wherein the second region, the isolated protruding pattern and the fourth region each form an interior angle of 55° to 75° with a surface of a non-light emitting portion.

22. The light emitting display device of claim 19, wherein an inner angle of the inclined side surface of the isolated protrusion pattern is in the range of 65° to 75°.

23. The light emitting display device of claim 19 , wherein the isolated protrusion pattern has a trapezoidal cross section or a triangular cross section with rounded apexes.

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