Light-emitting device, semiconductor structure, method for manufacturing a thin film layer, and method for manufacturing a light-emitting device

Abstract

To achieve high image quality.SOLUTION: An LED display device 1 includes: a first thin film layer 20R on which a thin film LED 30R is arranged; a second thin film layer 20G which is laminated on the first thin film layer 20R and includes a thin film LED 30G which is arranged while overlapping, when looked in a light emission direction De orthogonal to the thin film LED 30R, on at least a part of the thin film LED 30R; and a circuit board 10 on which the first thin film layer 20R is laminated, and which controls light emission of the thin film LED 30R and the thin film LED 30G. In the first thin film layer 20R, a first thin film layer opening 52aG is formed from a first thin film layer upper surface 20RS1 facing the second thin film layer 20G in the light emission direction De to a first thin film layer lower surface 20RS2 facing the circuit board 10, and the thin film LED 30G and the circuit board 10 are electrically conducted via the first thin film layer opening 52aG.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a light-emitting device, a semiconductor structure, a method for manufacturing a thin film layer, and a method for manufacturing a light-emitting device, and is suitable for application to, for example, a light-emitting device in which a semiconductor element is mounted on a circuit board.

Background Art

[0002] In recent years, a light-emitting device that displays an image by selectively driving and emitting light from a plurality of semiconductor elements mounted in a matrix on a circuit board has been proposed (see, for example, Patent Document 1 and Patent Document 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] In such a light-emitting device, further higher image quality is desired.

[0005] The present invention has been made in consideration of the above points, and intends to propose a light-emitting device, a semiconductor structure, a method for manufacturing a thin film layer, and a method for manufacturing a light-emitting device that can achieve higher image quality.

Means for Solving the Problems

[0006] In order to solve such problems, in the light-emitting device of the present invention, a first layer in which a first light-emitting element is disposed, a second layer laminated on the first layer and including a second light-emitting element that overlaps at least a part of the first light-emitting element when viewed from a light-emitting direction orthogonal to the light-emitting surface of the first light-emitting element, and a control substrate laminated on the first layer and controlling the light emission of the first light-emitting element and the second light-emitting element are provided. The first layer has a first opening formed from a first surface facing the second layer in the light-emitting direction to a second surface facing the control substrate, and the second light-emitting element and the control substrate are electrically connected through the first opening. a first lead wire provided in the first layer, extending from the first light-emitting element in the first direction, and electrically connecting the first light-emitting element and the control substrate; and a second lead wire provided in the second layer, extending from the second light-emitting element in a second direction different from the first direction toward the first opening, and electrically connecting the second light-emitting element and the control substrate through the first opening It is like this.

[0007] Further, in the semiconductor structure of the present invention, a base material, a first layer provided on the base material and including a first light-emitting element, and a second layer laminated on the first layer and including a second light-emitting element that overlaps at least a part of the first light-emitting element when viewed from the lamination direction are provided. The first layer has an opening formed from a first surface facing the second layer in the lamination direction to a second surface facing the base material, and a first electrode provided in the opening. The second layer has a second electrode that overlaps the first electrode when viewed from the lamination direction. a first lead wire provided in the first layer and extending from the first light-emitting element in the first direction; and a second lead wire provided in the second layer and extending from the second light-emitting element in a second direction different from the first direction toward the opening It is like this.

[0008] Furthermore, in the method for manufacturing a thin film layer of the present invention, a first insulating layer is formed on a substrate, a light-emitting element is formed on the first insulating layer by using intermolecular force, a first insulating layer opening penetrating the first insulating layer is formed in the first insulating layer, a second insulating layer covering the first insulating layer and the light-emitting element is formed, a second insulating layer opening communicating with the first insulating layer opening is formed in the second insulating layer, the first insulating layer opening and the second insulating layer opening are covered with a conductive material, and the surface of the second insulating layer is planarized to form a first thin film layer and a second thin film layer. A thin film layer forming step is included. On the surface of the second insulating layer of the first thin film layer formed in the thin film layer forming step, the second thin film layer formed in the thin film layer forming step is disposed so that the light-emitting elements formed in the first thin film layer and the second thin film layer overlap, and a bonding step of bonding the conductive material of the second thin film layer and the conductive material of the first thin film layer by using intermolecular force is included.

[0009] In the method for manufacturing a light-emitting device of the present invention, a step of bonding the above-described control substrate and the first layer by intermolecular force and a step of bonding the above-described first layer and the second layer by intermolecular force are provided.

[0010] In the present invention, the light emission of the second light-emitting element in the second layer in which the second light-emitting element laminated in the light-emitting direction so as to overlap the first light-emitting element is arranged with the first layer interposed between the control substrate can be controlled by the control substrate.

Effect of the Invention

[0011] According to the present invention, a light-emitting device, a semiconductor structure, a thin-film layer manufacturing method, and a light-emitting device manufacturing method capable of achieving high image quality can be realized.

Brief Description of the Drawings

[0012]

Figure 1

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Embodiments for Carrying Out the Invention

[0013] Hereinafter, embodiments for carrying out the invention (hereinafter referred to as embodiments) will be described with reference to the drawings.

[0014] [1. First Embodiment] [1-1. Configuration of LED Display Device] As shown in FIGS. 1 and 2, the LED display device 1 includes an LED display section 2, a heat dissipation member 3, a connection cable 4, a connection terminal section 5, a drive driver 6, and the like. The LED display device 1 is also called a micro LED display, and is a display device in which a set of LED elements of red, green, and blue are associated with one pixel. That is, the LED display section 2 is a display device in which elements including inorganic light-emitting diodes (LEDs: Light Emitting Diodes) are arranged in a matrix as pixels (one pixel) on a circuit board 10. The circuit board 10 is a board on which a wiring layer, drive elements and drive circuits connected to the wiring layer are arranged in order to selectively drive the LEDs in the pixels, and which makes electrical connection with the LEDs. Hereinafter, in FIG. 1, the direction from left to right on the paper surface is defined as the +X direction, the direction from upper right to lower left on the paper surface is defined as the +Y direction, and the direction from bottom to top on the paper surface is defined as the +Z direction.

[0015] [1-2. Overall Configuration of LED Display Section] As shown in FIGS. 4 and 5, the LED display section 2 has a configuration in which a thin film layer group 18 composed of three thin film layers, a first thin film layer 20R, a second thin film layer 20G, and a third thin film layer 20B, is laminated in a display area set on the surface on the +Z direction side of a flat circuit board 10 (hereinafter also referred to as a board surface 10S). Hereinafter, the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B are collectively also referred to as the thin film layer 20. Each thin film layer 20 has a film shape in which light-emitting elements are arranged in a lattice, and the film size is equivalent to the display size of the LED display section 2. For this reason, in the LED display section 2, the films of the respective thin film layers 20 are not independent for each pixel, but have the size of the entire display surface, and the range of one film of each thin film layer 20 occupies the range of the entire display surface.

[0016] The heat radiating member 3 (Fig. 1) is formed of a metal material having relatively high thermal conductivity, such as aluminum, and is configured in a flat rectangular parallelepiped shape as a whole. This heat radiating member 3 is installed so as to be in contact with the LED display section 2 on the -Z direction side of the LED display section 2, that is, on the opposite side of the surface on which an image or the like is displayed. The connection cable 4 is electrically connected to a predetermined control device (not shown) via the connection terminal section 5, and transmits the image signal supplied from the control device and supplies it to the drive driver 6.

[0017] The drive driver 6 is mounted, for example, on the surface of the circuit board 10, and is electrically connected to the connection cable 4 and the LED display section 2, respectively. This drive driver 6 generates drive signals for red, green, and blue respectively based on, for example, the image signal supplied via the connection cable 4, and supplies a drive current based on these drive signals to the LED display section 2. As a result, the LED display device 1 displays an image based on the image signal supplied from a control device (not shown) or the like in the display area of the LED display section 2.

[0018] Hereinafter, among the circuit board 10 and the thin film layer group 18 in the LED display section 2, the pixel section 8 which is the area for one pixel will be described. Also hereinafter, "K" will be appended to the end of the reference numeral of the member related to the cathode terminal, "R" will be appended to the end of the reference numeral of the member related to the thin film LED 30R of the first thin film layer 20R, "G" will be appended to the end of the reference numeral of the member related to the thin film LED 30G of the second thin film layer 20G, and "B" will be appended to the end of the reference numeral of the member related to the thin film LED 30B of the third thin film layer 20B. Further hereinafter, the direction (i.e., the Z direction) orthogonal to the upper surface (light emitting surface) which is the +Z direction side surface of the thin film LEDs 30R, 30G, and 30B will also be referred to as the light emitting direction De. Further hereinafter, the direction in which the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B are laminated (i.e., the Z direction) will also be referred to as the lamination direction. Further hereinafter, the direction along the left and right on the paper surface in FIG. 4, i.e., the direction along the cross-sectional view taken along the A-A arrow in FIG. 2 will also be referred to as the AA cross-sectional direction Da. Also hereinafter, the direction along the left and right on the paper surface in FIG. 5, i.e., the direction along the cross-sectional view taken along the B-B arrow in FIG. 2 will also be referred to as the BB cross-sectional direction Db.

[0019] [1-3. Configuration of Circuit Board] As shown in FIGS. 3, 4, and 5, the circuit board 10 is a CMOS (Complementary MOS) backplane circuit board manufactured by a silicon process. The circuit board 10 has a base material portion 10M, an insulating layer 11, connection pads 12 (connection pads 12R, 12G, 12B, and 12NC), active elements 14 (active elements 14R, 14G, 14B, and 14NC), and a wiring layer 16.

[0020] The base material portion 10M is a silicon wafer. The insulating layer 11 has sufficient insulation properties and is disposed so as to cover the wiring layer 16 from the +Z direction side.

[0021] The connection pads 12 (connection pads 12R, 12G, 12B, and 12NC) are arranged in a matrix (i.e., grid-like) pattern on the substrate surface 10S. Hereinafter, the connection pads 12R, 12G, 12B, and 12NC will also be collectively referred to as the connection pads 12. For each pixel, a connection pad set 12T is constituted by four connection pads 12R, 12G, 12B, and 12NC. The connection pad set 12T is arranged such that the light-emitting part center 24C, which is the center of the light-emitting part 24 (Fig. 2), is positioned at its central part (i.e., the center of the pixel area). Therefore, the light-emitting part center 24C is located inside the circumscribed rectangle ER of the connection pads 12R, 12G, 12B, and 12NC.

[0022] The connection pad 12R, as the first connection pad, is made of a conductive material, for example, square-shaped when viewed from the +Z direction side, and is located on the -X + Y direction side of the connection pad set 12T. Also, the connection pad 12R is arranged on the -Z direction side of the vertical wiring 22R (i.e., the anode pad 44R), and the surface (upper surface) of the connection pad 12R on the +Z direction side (hereinafter also referred to as the connection pad surface 12RS) is exposed on the substrate surface 10S. Furthermore, the connection pad 12R is electrically connected to the active element 14R inside the circuit board 10, and the connection pad surface 12RS is in contact with the surface (lower surface) of the anode pad 44R on the -Z direction side in the first thin film layer 20R (hereinafter also referred to as the anode pad surface 44RS), and is electrically connected.

[0023] The connection pad 12G as the second connection pad is configured in the same manner as the connection pad 12R and is located on the +X+Y direction side of the connection pad set 12T. Also, the connection pad 12G is arranged on the -Z direction side of the anode pillar 42aG in the vertical wiring 22G, and the surface (+Z direction side surface (upper surface), hereinafter also referred to as the connection pad surface 12GS) of the connection pad 12G is exposed on the substrate surface 10S. Further, the connection pad 12G is electrically connected to the active element 14G inside the circuit board 10, and the connection pad surface 12GS is in contact with the surface (-Z direction side surface (lower surface), hereinafter also referred to as the anode pillar lower surface 42aGS2 as the second exposed surface) of the anode pillar 42aG in the first thin film layer 20R and is electrically connected.

[0024] The connection pad 12B as the third connection pad is configured in the same manner as the connection pad 12R and is located on the +X - Y direction side of the connection pad set 12T. Also, the connection pad 12B is arranged on the -Z direction side of the anode pillar 42aB1 in the vertical wiring 22B, and the surface (+Z direction side surface (upper surface), hereinafter also referred to as the connection pad surface 12BS) of the connection pad 12B is exposed on the substrate surface 10S. Further, the connection pad 12B is electrically connected to the active element 14B inside the circuit board 10, and the connection pad surface 12BS is in contact with the surface (-Z direction side surface (lower surface), hereinafter also referred to as the anode pillar lower surface 42aB1S2) of the anode pillar 42aB1 in the first thin film layer 20R and is electrically connected.

[0025] The connection pad 12NC is configured in the same way as the connection pad 12R and is located on the -X-Y direction side of the connection pad set 12T. Also, the connection pad 12NC is arranged on the -Z direction side of the cathode pillar 40kR in the vertical direction wiring 22K, and on the substrate surface 10S, the surface (+Z direction side surface (upper surface), hereinafter also referred to as the connection pad surface 12NCS) of the connection pad 12NC is exposed. Further, the connection pad 12NC is electrically connected to the active element 14NC inside the circuit board 10. However, the connection pad 12NC does not contact the surface (lower surface) of the cathode pillar 40kR in the first thin film layer 20R on the -Z direction side of the connection pad surface 12NCS (hereinafter also referred to as the cathode pillar lower surface 40kRS2) and is not electrically connected. Thus, in this embodiment, although the connection pads 12R, 12G, and 12B are used, the connection pad 12NC is not used.

[0026] The active elements 14 (active elements 14R, 14G, 14B, and 14NC) are arranged in a matrix (i.e., lattice) inside the circuit board 10. Hereinafter, the active elements 14R, 14G, 14B, and 14NC are also collectively referred to as the active element 14.

[0027] The active element 14R is composed of two MOS transistors and one capacitor, is arranged on the -Z direction side of the connection pad 12R, and is electrically connected to the wiring inside the wiring layer 16. The active elements 14G, 14B, and 14NC are configured in the same way as the active element 14R, and are respectively arranged on the -Z direction side of the connection pads 12G, 12B, and 12NC and are electrically connected to the wiring inside the wiring layer 16.

[0028] Although not shown in detail, the wiring inside the wiring layer 16 is arranged in a matrix (i.e., lattice), is appropriately electrically connected to the active elements 14 (active elements 14R, 14G, 14B, and 14NC) and the connection pads 12 (12R, 12G, 12B, and 12NC), and is electrically connected to the drive driver 6.

[0029] The circuit board 10 has a substrate surface 10S formed in an extremely flat planar shape. That is, in the circuit board 10, the insulating layer surface 11S which is the upper surface of the insulating layer 11, the connection pad surfaces 12RS, 12GS, 12BS, and 12NCS are all extremely flat, and each forms a plane parallel to each other. Further, the distance (i.e., step) in the Z direction for each is also extremely small. That is, the insulating layer surface 11S, the connection pad surfaces 12RS, 12GS, 12BS, and 12NCS are located on the same plane respectively.

[0030] Specifically, in the circuit board 10, the surface roughness of the substrate surface 10S, that is, the surface roughness (also called roughness, surface maximum step) Rpv in the insulating layer surface 11S, the connection pad surfaces 12RS, 12GS, 12BS, and 12NCS is all 10 [nm] or less.

[0031] [1-4. Configuration of the thin film layer group] As shown in FIGS. 4 and 5, the thin film layer group 18 has three thin films 20, namely, a first thin film layer 20R, a second thin film layer 20G, and a third thin film layer 20B, laminated from the -Z direction to the +Z direction. The thin film layer group 18 is physically joined to the circuit board 10 by intermolecular forces and is also electrically connected to the circuit board 10.

[0032] In the thin film layer group 18, a plurality of pixels (pixel portions 8) arranged in a matrix are disposed within the region of the LED display unit 2. The pixel portion 8 mainly includes, when viewed from the Z direction, four vertical wirings 22 (vertical wirings 22K, 22R, 22G, and 22B) disposed at the four corners and corresponding to anodes and cathodes, and one light emitting portion 24 disposed at the center of the pixel portion 8 surrounded by the vertical wirings 22. Hereinafter, the vertical wirings 22K, 22R, 22G, and 22B are collectively referred to as the vertical wiring 22.

[0033] The vertical wiring 22K is made of a conductive material and is composed of cathode pillars 40kB, 40kG, and 40kR. It extends along the Z direction on the -Z direction side of the cathode common wiring 17. The surface on the +Z direction side of this vertical wiring 22K is connected to the surface on the -Z direction side of the cathode common wiring 17.

[0034] The vertical wiring 22R is made of a conductive material and is composed of an anode pad 44R. The vertical wiring 22G is made of a conductive material and is composed of an anode pad 44G and an anode pillar 42aG. The vertical wiring 22B is made of a conductive material and is composed of an anode pad 44B, anode pillars 42aB2, and 42aB1.

[0035] The light-emitting part 24 is formed by the thin-film LEDs 30R, 30G, and 30B overlapping when viewed from the Z direction (light-emitting direction De). In the present embodiment, the thin-film LEDs 30R, 30G, and 30B overlap in the Z direction such that their centers coincide with each other and their positions in the X direction and Y direction at the outer shape positions coincide. Also, even if the thin-film LEDs 30R, 30G, and 30B do not overlap in the Z direction such that their centers coincide with each other, if at least a part of them overlaps when viewed from the Z direction, it is considered that the thin-film LEDs 30R, 30G, and 30B overlap. Hereinafter, the thin-film LEDs 30R, 30G, and 30B are collectively referred to as the thin-film LED 30.

[0036] On the surface on the +Z direction side of the thin-film layer group 18 (that is, the surface on the +Z direction side of the third thin-film layer 20B), the cathode common wiring 17 is provided. The cathode common wiring 17 (FIG. 2 and and FIG. 3) is linearly arranged along the X direction and Y direction outside the region of the LED display unit 2, and is linearly arranged along the X direction between a row of light-emitting part rows composed of a plurality of light-emitting parts 24 arranged in the X direction and a light-emitting part row adjacent to the light-emitting part row in the Y direction. Also, this cathode common wiring 17 extends to the substrate surface 10S and terminates at the common cathode connection terminal of the drive driver 6.

[0037] [1-4-1. Structure of the First Thin Film Layer] As shown in FIGS. 4, 5, and 6, the first thin film layer 20R is composed of a base transparent insulating material 26R, a transparent insulating material 28R, a thin film LED 30R, an anode electrode 32R, a cathode electrode 34R, lead-out wirings 36aR and 36kR, interlayer insulating films 38aR and 38kR, anode pillars 42aG and 42aB1, an anode pad 44R, and a cathode pillar 40kR.

[0038] The base transparent insulating material 26R as the second insulating material is composed of, for example, SiO 2 , SiN, transparent polyimide, etc., and has sufficient insulating properties. Although this base transparent insulating material 26R extends from one end to the other end in the pixel portion 8 with respect to the AA cross-sectional direction Da (FIG. 4), at a location facing the connection pad 12G on the circuit board 10 in the Z direction, from the surface on the +Z direction side (upper surface) of the base transparent insulating material 26R (hereinafter also referred to as the base transparent insulating material upper surface 26RS1) to the surface on the -Z direction side (lower surface) (hereinafter also referred to as the base transparent insulating material lower surface 26RS2), a base transparent insulating material opening 48aG is formed as a first insulating layer opening that penetrates the base transparent insulating material 26R in the Z direction (light emission direction De).

[0039] Also, although the base transparent insulating material 26R extends from one end to the other end in the pixel portion 8 with respect to the BB cross-sectional direction Db (FIG. 5), at locations facing the connection pads 12B and 12R on the circuit board 10 in the Z direction, base transparent insulating material openings 48aB1 and 48R are respectively formed as first insulating layer openings that penetrate the base transparent insulating material 26R in the Z direction (light emission direction De) from the base transparent insulating material upper surface 26RS1 to the base transparent insulating material lower surface 26RS2.

[0040] The thin-film LED 30R is arranged at the center of the pixel portion 8 with respect to the AA cross-sectional direction Da and the BB cross-sectional direction Db, has a length within a predetermined range in the AA cross-sectional direction Da and the BB cross-sectional direction Db, has a thickness in the Z direction of 3 [μm] or less, and is a thin-film inorganic light-emitting element embedded in the transparent insulating material 28R. The light-emitting surface, which is the upper surface on the +Z direction side of the thin-film LED 30R, is a plane along the XY direction. This thin-film LED 30R is, for example, a quaternary LED that emits red light and is formed of a III-V group compound semiconductor material. The anode electrode 32R is disposed on the anode formed at the center of the thin-film LED 30R on the +Z direction side. The cathode electrode 34R is disposed on the cathode formed on the -X-Y direction side on the +Z direction side of the thin-film LED 30R.

[0041] The lead-out wiring 36aR (Fig. 5) is composed of a conductive material, contacts the surface (upper surface) on the +Z direction side of the anode electrode 32R and the anode pad 44R respectively, and electrically connects the two. The interlayer insulating film 38aR is composed of an insulating material, is disposed between the lead-out wiring 36aR and the thin-film LED 30R, and is formed larger than the lead-out wiring 36aR when viewed along the Z direction. This interlayer insulating film 38aR protects against short circuits in unnecessary portions between the lead-out wiring 36aR and the thin-film LED 30R.

[0042] The lead-out wiring 36kR (Fig. 4) is composed of a conductive material in the same manner as the lead-out wiring 36aR (Fig. 5), contacts the surface (upper surface) on the +Z direction side of the cathode electrode 34R and the cathode pillar 40kR respectively, and electrically connects the two. The interlayer insulating film 38kR is composed of an insulating material in the same manner as the interlayer insulating film 38aR (Fig. 5), is disposed between the lead-out wiring 36kR and the thin-film LED 30R, and is formed larger than the lead-out wiring 36kR when viewed along the Z direction. This interlayer insulating film 38kR protects against short circuits in unnecessary portions between the lead-out wiring 36kR and the thin-film LED 30R.

[0043] The above-described anode electrode 32R, cathode electrode 34R, lead wirings 36aR and 36kR, and interlayer insulating films 38aR and 38kR are desirably transparent with respect to the wavelength of light emitted by the thin-film LED 30R.

[0044] The anode pillar 42aG (FIG. 4) is made of a conductive material such as gold, copper, or titanium, is disposed at a position facing the connection pad 12G of the circuit board 10 in the Z direction, and constitutes a part of the vertical wiring 22G. Specifically, the anode pillar 42aG is formed integrally with the contact metal 46aPL1R on the contact metal 46aPL1R (on the +Z direction side) which is a gold-based metal for process stabilization. The anode pillar 42aG is also composed of a titanium barrier layer formed on the contact metal 46aPL1R which is a copper diffusion prevention film, a copper seed metal formed on the barrier layer, and a plated portion which is copper grown and filled on the seed metal. The same applies to the anode pillar 42aB1 and the cathode pillar 40kR described later. The anode pillar 42aB1 (FIG. 5) is formed integrally with the contact metal 46aPL2R on the contact metal 46aPL2R (on the +Z direction side). The cathode pillar 40kR (FIG. 4) is formed integrally with the contact metal 46kR on the contact metal 46kR (on the +Z direction side). This anode pillar 42aG exposes the surface on the +Z direction side (hereinafter also referred to as the upper surface 42aGS1 of the anode pillar as the first exposed surface) from the transparent insulating material 28R. The anode pillar 42aG also exposes the surface on the -Z direction side (the lower surface 42aGS2 of the anode pillar) from the underlying transparent insulating material 26R.

[0045] The anode pillar 42aB1 (Fig. 5) is made of a material having conductivity in the same manner as the anode pillar 42aG, and is disposed at a position facing the connection pad 12B of the circuit board 10 in the Z direction, and constitutes a part of the vertical wiring 22B. This anode pillar 42aB1 exposes the surface on the +Z direction side (hereinafter also referred to as the anode pillar upper surface 42aB1S1) from the transparent insulating material 28R. Further, the anode pillar 42aB1 exposes the surface on the -Z direction side (the anode pillar lower surface 42aB1S2) from the underlying transparent insulating material 26R.

[0046] The anode pad 44R (Fig. 5) as a conductive member is made of a material having conductivity in the same manner as the anode pillar 42aG, and is disposed at a position facing the connection pad 12R of the circuit board 10 in the Z direction, and constitutes the vertical wiring 22R. This anode pad 44R exposes the surface on the -Z direction side (the anode pad surface 44RS) from the underlying transparent insulating material 26R.

[0047] The cathode pillar 40kR (Fig. 4) is made of a material having conductivity in the same manner as the anode pillar 42aG, and is disposed at a position facing the connection pad 12NC of the circuit board 10 in the Z direction with the underlying transparent insulating material 26R interposed therebetween, and constitutes a part of the vertical wiring 22K. This cathode pillar 40kR exposes the surface on the +Z direction side (hereinafter also referred to as the cathode pillar upper surface 40kRS1) from the transparent insulating material 28R.

[0048] The transparent insulating material 28R as the first insulating material is made of, for example, the same material as the underlying transparent insulating material 26R, has sufficient insulation properties, and is transparent at least to the wavelength of the light emitted by the thin-film LED 30R. This transparent insulating material 28R covers, from the +Z direction side, the underlying transparent insulating material 26R, the thin-film LED 30R, the anode electrode 32R, the cathode electrode 34R, the lead-out wirings 36aR and 36kR, the interlayer insulating films 38aR and 38kR, and the anode pad 44R, excluding the anode pillars 42aG and 42aB1 and the cathode pillar 40kR, and embeds these thin-film LED 30R, anode electrode 32R, cathode electrode 34R, lead-out wirings 36aR and 36kR, interlayer insulating films 38aR and 38kR, and anode pad 44R inside between them and the underlying transparent insulating material 26R.

[0049] This transparent insulating material 28R (FIG. 4) has a transparent insulating material opening 50aG formed as a second insulating layer opening that penetrates the transparent insulating material 28R in the Z direction (light emission direction De) from the surface (upper surface) on the +Z direction side of the transparent insulating material 28R (hereinafter also referred to as the transparent insulating material surface 28RS) to the surface (lower surface) on the -Z direction side (i.e., the +Z direction side end of the underlying transparent insulating material opening 48aG) on the +Z direction side of the underlying transparent insulating material opening 48aG.

[0050] Also, this transparent insulating material 28R (FIG. 5) has a transparent insulating material opening 50aB1 formed as an insulating material opening that penetrates the transparent insulating material 28R in the Z direction (light emission direction De) from the transparent insulating material surface 28RS to the surface (lower surface) on the -Z direction side (i.e., the +Z direction side end of the underlying transparent insulating material opening 48aB1) on the +Z direction side of the underlying transparent insulating material opening 48aB1.

[0051] Furthermore, the transparent insulating material 28R (Fig. 4) forms a transparent insulating material opening 50kR as a second insulating layer opening that penetrates the transparent insulating material 28R in the Z direction (light emission direction De) from the surface 28RS of the transparent insulating material to the surface on the -Z direction side (lower surface) (i.e., the upper surface 26RS1 of the underlying transparent insulating material) at a location facing the connection pad 12NC in the circuit board 10 with the underlying transparent insulating material 26R sandwiched therebetween.

[0052] Such an underlying transparent insulating material opening 48aG and a transparent insulating material opening 50aG form a first thin film layer opening 52aG. The first thin film layer opening 52aG is formed from the upper surface on the +Z direction side of the first thin film layer 20R (hereinafter also referred to as the upper surface 20RS1 of the first thin film layer) to the lower surface on the -Z direction side (the lower surface 20RS2 of the first thin film layer), and an anode pillar 42aG is formed inside. Also, an underlying transparent insulating material opening 48aB1 and a transparent insulating material opening 50aB1 form a first thin film layer opening 52aB1. The first thin film layer opening 52aB1 is formed from the upper surface 20RS1 of the first thin film layer to the lower surface 20RS2 of the first thin film layer, and an anode pillar 42aB1 is formed inside.

[0053] Moreover, the upper surface 20RS1 of the first thin film layer 20R is formed in an extremely flat planar shape. That is, in the first thin film layer 20R, the surface 28RS of the transparent insulating material, the upper surfaces 42aGS1 and 42aB1S1 of the anode pillars, and the upper surface 40kRS1 of the cathode pillar are all extremely flat, and each is a plane parallel to each other. Furthermore, the distance (i.e., step) in the Z direction for each is also extremely small. That is, the surface 28RS of the transparent insulating material, the upper surface 42aGS1 of the anode pillar, the upper surface 42aB1S1 of the anode pillar, and the upper surface 40kRS1 of the cathode pillar are all located on the same plane.

[0054] Specifically, in the first thin film layer 20R, the surface roughness of the upper surface 20RS1 of the first thin film layer, that is, the surface roughness Rpv on the transparent insulating material surface 28RS, the upper surface 42aGS1 of the anode pillar, the upper surface 42aB1S1 of the anode pillar, and the upper surface 40kRS1 of the cathode pillar is all 10 [nm] or less.

[0055] Furthermore, in the first thin film layer 20R, the lower surface 20RS2 of the first thin film layer is formed in an extremely flat planar shape. That is, in the first thin film layer 20R, the lower surface 26RS2 of the underlying transparent insulating material, the lower surfaces 42aGS2 and 42aB1S2 of the anode pillar, the surface 44RS of the anode pad, and the surface (lower surface) on the -Z direction side of the lead wiring 36aR are all extremely flat, and each forms a plane parallel to each other. Furthermore, the distance (that is, the step) in the Z direction for each is also extremely small. That is, the lower surface 26RS2 of the underlying transparent insulating material, the lower surface 42aGS2 of the anode pillar, the lower surface 42aB1S2 of the anode pillar, the surface 44RS of the anode pad, and the lower surface of the lead wiring 36aR are all located on the same plane.

[0056] Specifically, in the first thin film layer 20R, the surface roughness of the lower surface 20RS2 of the first thin film layer, that is, the surface roughness Rpv on the lower surface 26RS2 of the underlying transparent insulating material, the lower surface 42aGS2 of the anode pillar, the lower surface 42aB1S2 of the anode pillar, the surface 44RS of the anode pad, and the lower surface of the lead wiring 36aR is all 10 [nm] or less.

[0057] [1-4-2. Structure of the second thin film layer] As shown in FIGS. 4, 5, and 7, the second thin film layer 20G is composed of an underlying transparent insulating material 26G, a transparent insulating material 28G, a thin film LED 30G, an anode electrode 32G, a cathode electrode 34G, lead wirings 36aG and 36kG, interlayer insulating films 38aG and 38kG, an anode pillar 42aB2, an anode pad 44G, and a cathode pillar 40kG.

[0058] The underlying transparent insulating material 26G is composed of the same material as the underlying transparent insulating material 26R, has sufficient insulation properties, and is transparent at least to the wavelength of the light emitted by the thin-film LED 30R. Although this underlying transparent insulating material 26G extends from one end to the other end in the pixel portion 8 with respect to the AA cross-sectional direction Da (FIG. 4), at the locations where the first thin-film layer openings 52aG and 50kR in the first thin-film layer 20R face the Z direction, from the surface on the +Z direction side (upper surface) of the underlying transparent insulating material 26G (hereinafter also referred to as the underlying transparent insulating material upper surface 26GS1) to the surface on the -Z direction side (lower surface) (hereinafter also referred to as the underlying transparent insulating material lower surface 26GS2), underlying transparent insulating material openings 48G and 48kG are respectively formed as the first insulating layer openings that penetrate the underlying transparent insulating material 26G in the Z direction (light emission direction De).

[0059] Also, although the underlying transparent insulating material 26G extends from one end to the other end in the pixel portion 8 with respect to the BB cross-sectional direction Db (FIG. 5), at the location where the first thin-film layer opening 52aB1 in the first thin-film layer 20R faces the Z direction, an underlying transparent insulating material opening 48aB2 is formed as the first insulating layer opening that penetrates the underlying transparent insulating material 26G in the Z direction (light emission direction De) from the underlying transparent insulating material upper surface 26GS1 to the underlying transparent insulating material lower surface 26GS2.

[0060] The thin-film LED 30G is arranged at the central portion in the pixel portion 8 with respect to the AA cross-sectional direction Da and the BB cross-sectional direction Db, has a length within a predetermined range in the AA cross-sectional direction Da and the BB cross-sectional direction Db, has a thickness in the Z direction of 3 [μm] or less, and is a thin-film inorganic light-emitting element embedded in the transparent insulating material 28G. The light-emitting surface, which is the upper surface on the +Z direction side of the thin-film LED 30G, is a plane along the XY direction. This thin-film LED 30G is an LED that emits green light and is formed of, for example, a GaN-based material. The anode electrode 32G is disposed on the anode formed at the central portion on the +Z direction side of the thin-film LED 30G. The cathode electrode 34G is disposed on the cathode formed on the +X-Y direction side on the +Z direction side of the thin-film LED 30G.

[0061] The lead wire 36aG (FIG. 4) is made of a conductive material, and is in contact with the surface (+Z direction side surface, upper surface) of the anode electrode 32G and the anode pad 44G, respectively, and electrically connects the two. The interlayer insulating film 38aG is made of an insulating material, is disposed between the lead wire 36aG and the thin film LED 30G, and is formed larger than the lead wire 36aG when viewed along the Z direction. This interlayer insulating film 38aG protects against short circuits in unnecessary portions between the lead wire 36aG and the thin film LED 30G.

[0062] The lead wire 36kG (FIG. 4) is made of a conductive material similar to the lead wire 36aG, and is in contact with the surface (+Z direction side surface, upper surface) of the cathode electrode 34G and the cathode pillar 40kG, respectively, and electrically connects the two. The interlayer insulating film 38kG is made of an insulating material similar to the interlayer insulating film 38aG, is disposed between the lead wire 36kG and the thin film LED 30G, and is formed larger than the lead wire 36kG when viewed along the Z direction. This interlayer insulating film 38kG protects against short circuits in unnecessary portions between the lead wire 36kG and the thin film LED 30G.

[0063] It is desirable that the above-described anode electrode 32G, cathode electrode 34G, lead wires 36aG and 36kG, and interlayer insulating films 38aG and 38kG be transparent to the wavelengths of light emitted by the thin film LEDs 30R and 30G.

[0064] The anode pillar 42aB2 (Fig. 5) is made of a conductive material such as gold, copper, or titanium, and is arranged at a position facing the anode pillar 42aB1 of the first thin film layer 20R in the Z direction, constituting a part of the vertical wiring 22B. Specifically, the anode pillar 42aB2 is formed integrally with the contact metal 46aPLG on the contact metal 46aPLG (on the +Z direction side) which is a gold-based metal for process stabilization. The anode pillar 42aB2 is also composed of a titanium barrier layer formed on the contact metal 46aPLG which is a copper diffusion prevention film, a copper seed metal formed on the barrier layer, and a plating part filled and grown with copper on the seed metal. The same applies to the cathode pillar 40kG described later. The cathode pillar 40kG (Fig. 4) is formed integrally with the contact metal 46kG on the contact metal 46kG (on the +Z direction side). This anode pillar 42aB2 exposes the surface on the +Z direction side (hereinafter also referred to as the anode pillar upper surface 42aB2S1) from the transparent insulating material 28G. The anode pillar 42aB2 also exposes the surface on the -Z direction side (hereinafter also referred to as the anode pillar lower surface 42aB2S2) from the underlying transparent insulating material 26G.

[0065] The anode pad 44G (Fig. 4) is made of a conductive material similar to the anode pillar 42aB2, and is arranged at a position facing the anode pillar 42aG of the first thin film layer 20R in the Z direction, constituting a part of the vertical wiring 22G. This anode pad 44G exposes the surface on the -Z direction side (hereinafter also referred to as the anode pad surface 44GS) from the underlying transparent insulating material 26G.

[0066] The cathode pillar 40kG (Fig. 4) is made of a material having conductivity, similar to the anode pillar 42aB2, and is arranged at a position facing the cathode pillar 40kR of the first thin film layer 20R in the Z direction, constituting a part of the vertical wiring 22K. This cathode pillar 40kG exposes the surface on the +Z direction side (hereinafter also referred to as the cathode pillar upper surface 40kGS1) from the transparent insulating material 28G. Also, the cathode pillar 40kG exposes the surface on the -Z direction side (hereinafter also referred to as the cathode pillar lower surface 40kGS2) from the underlying transparent insulating material 26G.

[0067] The transparent insulating material 28G is made of, for example, the same material as the underlying transparent insulating material 26G, has sufficient insulation properties, and is transparent at least to the wavelengths of the light emitted by the thin film LEDs 30R and 30G. This transparent insulating material 28G is arranged to cover the underlying transparent insulating material 26G, the thin film LED 30G, the anode electrode 32G, the cathode electrode 34G, the lead-out wirings 36aG and 36kG, the interlayer insulating films 38aG and 38kG, and the anode pad 44G from the +Z direction side, excluding the anode pillar 42aB2 and the cathode pillar 40kG, and embeds these thin film LED 30G, anode electrode 32G, cathode electrode 34G, lead-out wirings 36aG and 36kG, interlayer insulating films 38aG and 38kG, and anode pad 44G inside between them and the underlying transparent insulating material 26G.

[0068] This transparent insulating material 28G (Fig. 5) has a transparent insulating material opening 50aB2 as a second insulating layer opening that penetrates the transparent insulating material 28G in the Z direction (light emission direction De) from the surface (upper surface) on the +Z direction side (hereinafter also referred to as the transparent insulating material surface 28GS) to the surface (lower surface) on the -Z direction side (i.e., the +Z direction end of the underlying transparent insulating material opening 48aB2) on the +Z direction side of the underlying transparent insulating material opening 48aB2.

[0069] In addition, the transparent insulating material 28G (Fig. 4) has a transparent insulating material opening 50kG as a second insulating layer opening that penetrates the transparent insulating material 28G in the Z direction (light emission direction De) from the transparent insulating material surface 28GS to the -Z direction side surface (lower surface) (i.e., the +Z direction side end of the underlying transparent insulating material opening 48kG) on the +Z direction side of the underlying transparent insulating material opening 48kG.

[0070] Such an underlying transparent insulating material opening 48aB2 and a transparent insulating material opening 50aB2 form a second thin film layer opening 52aB2. The second thin film layer opening 52aB2 is formed from the upper surface on the +Z direction side of the second thin film layer 20G (hereinafter also referred to as the second thin film layer upper surface 20GS1) to the lower surface on the -Z direction side (hereinafter also referred to as the second thin film layer lower surface 20GS2), and an anode pillar 42aB2 is formed inside. Also, an underlying transparent insulating material opening 48kG and a transparent insulating material opening 50kG form a second thin film layer opening 52kG. The second thin film layer opening 52kG is formed from the second thin film layer upper surface 20GS1 to the second thin film layer lower surface 20GS2, and a cathode pillar 40kG is formed inside.

[0071] In addition, the upper surface 20GS1 of the second thin film layer 20G is formed in an extremely flat planar shape. That is, in the second thin film layer 20G, the transparent insulating material surface 28GS, the anode pillar upper surface 42aB2S1, and the cathode pillar upper surface 40kGS1 are all extremely flat, and each forms a plane parallel to each other. Furthermore, the distance (i.e., step) in the Z direction for each is also extremely small. That is, the transparent insulating material surface 28GS, the anode pillar upper surface 42aB2S1, and the cathode pillar upper surface 40kGS1 are all located on the same plane.

[0072] Specifically, in the second thin film layer 20G, the surface roughness of the second thin film layer upper surface 20GS1, that is, the surface roughness Gpv at the transparent insulating material surface 28GS, the anode pillar upper surface 42aB2S1, and the cathode pillar upper surface 40kGS1 is all 10 [nm] or less.

[0073] Furthermore, in the second thin film layer 20G, the lower surface 20GS2 of the second thin film layer is formed in an extremely flat planar shape. That is, in the second thin film layer 20G, the lower surface 26GS2 of the underlying transparent insulating material, the lower surface 42aB2S2 of the anode pillar, the surface 44GS of the anode pad, the lower surface 40kGS2 of the cathode pillar, and the surfaces (lower surfaces) on the -Z direction side of the lead-out wirings 36aG and 36kG are all extremely flat, and each forms a plane parallel to each other. Furthermore, the distances (i.e., steps) in the Z direction of each are also extremely small. That is, the lower surface 26GS2 of the underlying transparent insulating material, the lower surface 42aB2S2 of the anode pillar, the surface 44GS of the anode pad, the lower surface 40kGS2 of the cathode pillar, and the lower surfaces of the lead-out wirings 36aG and 36kG are all located on the same plane.

[0074] Specifically, in the second thin film layer 20G, the surface roughness of the lower surface 20GS2 of the second thin film layer, that is, the surface roughness Gpv at the lower surface 26GS2 of the underlying transparent insulating material, the lower surface 42aB2S2 of the anode pillar, the surface 44GS of the anode pad, the lower surface 40kGS2 of the cathode pillar, and the lower surfaces of the lead-out wirings 36aG and 36kG is all 10 [nm] or less.

[0075] [1-4-3. Structure of the Third Thin Film Layer] As shown in FIGS. 4, 5, and 8, the third thin film layer 20B is composed of an underlying transparent insulating material 26B, a transparent insulating material 28B, a thin film LED 30B, an anode electrode 32B, a cathode electrode 34B, lead-out wirings 36aB and 36kB, interlayer insulating films 38aB and 38kB, an anode pad 44B, and a cathode pillar 40kB.

[0076] The underlying transparent insulating material 26B is made of the same material as the underlying transparent insulating material 26R, has sufficient insulation properties, and is transparent at least to the wavelengths of light emitted by the thin-film LEDs 30R and 30G. Although this underlying transparent insulating material 26B extends from one end to the other end in the pixel portion 8 with respect to the AA cross-sectional direction Da (FIG. 4), at a location facing the second thin-film layer opening 52kG in the second thin-film layer 20G in the Z direction, a first insulating layer opening serving as an underlying transparent insulating material opening 48kB that penetrates the underlying transparent insulating material 26B in the Z direction (light emission direction De) is formed from the surface on the +Z direction side (upper surface) of the underlying transparent insulating material 26B (hereinafter also referred to as the underlying transparent insulating material upper surface 26BS1) to the surface on the -Z direction side (lower surface) (hereinafter also referred to as the underlying transparent insulating material lower surface 26BS2).

[0077] Also, although the underlying transparent insulating material 26B extends from one end to the other end in the pixel portion 8 with respect to the BB cross-sectional direction Db (FIG. 5), at a location facing the second thin-film layer opening 52aB2 in the second thin-film layer 20G in the Z direction, a first insulating layer opening serving as an underlying transparent insulating material opening 48B that penetrates the underlying transparent insulating material 26B in the Z direction (light emission direction De) is formed from the underlying transparent insulating material upper surface 26BS1 to the underlying transparent insulating material lower surface 26BS2.

[0078] The thin-film LED 30B as the third light-emitting element is arranged at the central portion in the pixel portion 8 with respect to the AA cross-sectional direction Da and the BB cross-sectional direction Db, has a length within a predetermined range in the AA cross-sectional direction Da and the BB cross-sectional direction Db, has a thickness in the Z direction of 3 [μm] or less, and is a thin-film inorganic light-emitting element embedded in the transparent insulating material 28B. The light-emitting surface, which is the upper surface on the +Z direction side of the thin-film LED 30B, is a plane along the XY direction. This thin-film LED 30B is an LED that emits blue light, for example, formed of a GaN-based material. The anode electrode 32B is disposed on the anode formed at the central portion on the +Z direction side of the thin-film LED 30B. The cathode electrode 34B is disposed on the cathode formed on the +X-Y direction side on the +Z direction side of the thin-film LED 30B.

[0079] The lead wiring 36aB (Fig. 5) is made of a conductive material, and is in contact with the surface (upper surface) on the +Z direction side of the anode electrode 32B and the anode pad 44B, respectively, electrically connecting the two. The interlayer insulating film 38aB is made of an insulating material, is disposed between the lead wiring 36aB and the thin-film LED 30B, and is formed larger than the lead wiring 36aB when viewed along the Z direction. This interlayer insulating film 38aB protects against short circuits in unnecessary portions between the lead wiring 36aB and the thin-film LED 30B.

[0080] The lead wiring 36kB (Fig. 4) is made of a conductive material similar to the lead wiring 36aB (Fig. 5), and is in contact with the surface (upper surface) on the +Z direction side of the cathode electrode 34B and the cathode pillar 40kB, respectively, electrically connecting the two. The interlayer insulating film 38kB is made of an insulating material similar to the interlayer insulating film 38aB, is disposed between the lead wiring 36kB and the thin-film LED 30B, and is formed larger than the lead wiring 36kB when viewed along the Z direction. This interlayer insulating film 38kB protects against short circuits in unnecessary portions between the lead wiring 36kB and the thin-film LED 30B.

[0081] It is desirable that the above-described anode electrode 32B, cathode electrode 34B, lead wirings 36aB and 36kB, and interlayer insulating films 38aB and 38kB be transparent to the wavelengths of light emitted by the thin-film LEDs 30R, 30G, and 30B.

[0082] The anode pad 44B (Fig. 5) is made of a conductive material such as gold, copper, or titanium, is disposed at a position facing the anode pillar 42aB2 of the second thin-film layer 20G in the Z direction, and constitutes a part of the vertical wiring 22B. This anode pad 44B exposes the surface on the -Z direction side (hereinafter also referred to as the anode pad surface 44BS) from the underlying transparent insulating material 26B.

[0083] The cathode pillar 40kB (Figure 4) is made of a material having conductivity, similar to the anode pad 44B, and is disposed at a position facing the cathode pillar 40kG of the second thin film layer 20G in the Z direction, and constitutes a part of the vertical wiring 22K. Specifically, the cathode pillar 40kB is integrally formed with the contact metal 46kB on the contact metal 46kB (on the +Z direction side), which is a gold-based metal for process stabilization. The cathode pillar 40kB is also composed of a titanium barrier layer formed on the contact metal 46kB, which is a copper diffusion prevention film, a copper seed metal formed on the barrier layer, and a plating part filled with copper grown on the seed metal. This cathode pillar 40kB exposes the surface on the +Z direction side (hereinafter also referred to as the cathode pillar upper surface 40kBS1) from the transparent insulating material 28B. The cathode pillar 40kB also exposes the surface on the -Z direction side (hereinafter also referred to as the cathode pillar lower surface 40kBS2) from the underlying transparent insulating material 26B.

[0084] The transparent insulating material 28B is composed of, for example, the same material as the underlying transparent insulating material 26B, has sufficient insulation properties, and is transparent at least to the wavelengths of light emitted by the thin film LEDs 30R, 30G, and 30B. This transparent insulating material 28B is disposed so as to cover the underlying transparent insulating material 26B, the thin film LED 30B, the anode electrode 32B, the cathode electrode 34B, the lead-out wirings 36aB and 36kB, the interlayer insulating films 38aB and 38kB, and the anode pad 44B from the +Z direction side, and embeds these thin film LED 30B, anode electrode 32B, cathode electrode 34B, lead-out wirings 36aB and 36kB, interlayer insulating films 38aB and 38kB, and anode pad 44B inside between the underlying transparent insulating material 26B.

[0085] This transparent insulating material 28B has a second insulating layer opening in the form of a transparent insulating material opening 50kB that penetrates the transparent insulating material 28B in the Z direction (light emission direction De) from the surface on the +Z direction side (upper surface) of the transparent insulating material 28B (hereinafter also referred to as the transparent insulating material surface 28BS) to the surface on the -Z direction side (lower surface) (i.e., the +Z direction side end of the underlying transparent insulating material opening 48kB) over the underlying transparent insulating material opening 48kB on the +Z direction side.

[0086] Such an underlying transparent insulating material opening 48kB and a transparent insulating material opening 50kB form a third thin film layer opening 52kB. The third thin film layer opening 52kB is formed from the upper surface on the +Z direction side of the third thin film layer 20B (hereinafter also referred to as the upper surface 20BS1 of the third thin film layer) to the lower surface on the -Z direction side (hereinafter also referred to as the lower surface 20BS2 of the third thin film layer), and a cathode pillar 42kB is formed inside. The +Z direction side end of this cathode pillar 40kB slightly protrudes in the +Z direction from the transparent insulating material surface 28BS.

[0087] Also, the lower surface 20BS2 of the third thin film layer 20B is formed in an extremely flat planar shape. That is, in the third thin film layer 20B, the lower surface 26BS2 of the underlying transparent insulating material, the anode pad surface 44BS, the lower surface 40kBS2 of the cathode pillar, and the surfaces (lower surfaces) on the -Z direction side of the lead-out wirings 36aB and 36kB are all extremely flat and are all parallel to each other in a plane, and furthermore, the distances (i.e., steps) in the Z direction for each are also extremely small. That is, the lower surfaces of the lower surface 26BS2 of the underlying transparent insulating material, the anode pad surface 44BS, the lower surface 40kBS2 of the cathode pillar, and the lead-out wirings 36aB and 36kB are all located on the same plane.

[0088] Specifically, in the third thin film layer 20B, the surface roughness of the lower surface 20BS2 of the third thin film layer, that is, the surface roughness Ppv on the lower surfaces of the lower surface 26BS2 of the underlying transparent insulating material, the anode pad surface 44BS, the lower surface 40kBS2 of the cathode pillar, and the lead-out wirings 36aB and 36kB are all 10 [nm] or less.

[0089] By the way, light is likely to attenuate when passing through an LED material that emits light with a wavelength shorter than its own. Since the wavelengths of red, green, and blue light become shorter in that order, the LED display device 1 arranges the thin-film LED 30R that emits red light, which is less likely to attenuate, on the back side when viewed from the +Z direction side where the image is displayed, and sequentially arranges the thin-film LEDs 30G and 30B from the -Z direction side toward the +Z direction side. Also, hereinafter, the lead-out wirings 36kR, 36aR, 36kG, 36aG, 36kB, and 36aB are collectively referred to as the lead-out wiring 36.

[0090] [1-5. Connection relationship between the thin-film layer and the circuit board] [1-5-1. Physical connection relationship between the circuit board and the thin-film layer] The substrate surface 10S of the circuit board 10 and the lower surface 20RS2 of the first thin-film layer 20R of the first thin-film layer are physically joined by intermolecular forces. Also, the upper surface 20RS1 of the first thin-film layer 20R of the first thin-film layer and the lower surface 20GS2 of the second thin-film layer 20G of the second thin-film layer are physically joined by intermolecular forces. Furthermore, the upper surface 20GS1 of the second thin-film layer 20G of the second thin-film layer and the lower surface 20BS2 of the third thin-film layer 20B of the third thin-film layer are physically joined by intermolecular forces.

[0091] In this way, in the LED display section 2, the substrate surface 10S and the lower surface 20RS2 of the first thin-film layer, the upper surface 20RS1 of the first thin-film layer and the lower surface 20GS2 of the second thin-film layer, and the upper surface 20GS1 of the second thin-film layer and the lower surface 20BS2 of the third thin-film layer are joined by intermolecular forces, not by metal bonding.

[0092] [1-5-2. Electrical connection relationship between the circuit board and the thin-film layer] The connection pad 12R (Fig. 5) has the connection pad surface 12RS physically joined to the anode pad surface 44RS of the anode pad 44R of the first thin-film layer 20R by intermolecular forces, and is electrically connected to the anode electrode 32R of the thin-film LED 30R through the anode pad 44R and the lead-out wiring 36aR, like the conductive path Rra.

[0093] The connection pad surface 12GS of the connection pad 12G (FIG. 4) is physically bonded to the anode pillar lower surface 42aGS2 of the anode pillar 42aG of the first thin-film layer 20R by intermolecular forces. The anode pillar upper surface 42aGS1 of the anode pillar 42aG is physically bonded to the anode pad surface 44GS of the anode pad 44G of the second thin-film layer 20G by intermolecular forces. The anode pad 44G is in physical contact with the lead-out wiring 36aG. Thus, the connection pad 12G is electrically connected to the anode electrode 32G of the thin-film LED 30G through the anode pillar 42aG, the anode pad 44G, and the lead-out wiring 36aG, like the conductive path Rga.

[0094] The connection pad 12B (FIG. 5) has a connection pad surface 12BS physically bonded to the anode pillar lower surface 42aB1S2 of the anode pillar 42aB1 of the first thin film layer 20R by intermolecular forces. The anode pillar upper surface 42aB1S1 of the anode pillar 42aB1 is physically bonded to the anode pillar lower surface 42aB2S2 of the anode pillar 42aB2 of the second thin film layer 20G by intermolecular forces. The anode pillar 42aB2 has an anode pillar upper surface 42aB2S1 physically bonded to the anode pad surface 44BS of the anode pad 44B of the third thin film layer 20B by intermolecular forces. The anode pad 44B is in physical contact with the lead-out wiring 36aB. Therefore, the connection pad 12G is electrically connected to the anode electrode 32B of the thin-film LED 30B via the anode pillar 42aB1, the anode pillar 42aB2, the anode pad 44B, and the lead-out wiring 36aB, like the conductive path Rba.

[0095] The cathode pillar 40kR (Fig. 4) has the upper surface 40kRS1 of the cathode pillar physically joined by intermolecular forces to the lower surface 40kGS2 of the cathode pillar 40kG of the second thin film layer 20G. The cathode pillar 40kG has the upper surface 40kGS1 of the cathode pillar physically joined by intermolecular forces to the lower surface 40kBS2 of the cathode pillar 40kB of the third thin film layer 20B. The cathode pillar 40kB has the upper surface 40kBS1 of the cathode pillar physically in contact with the cathode common wiring 17.

[0096] Also, the cathode pillar 40kR is physically in contact with the lead-out wiring 36kR. Therefore, the cathode electrode 34R is electrically connected to the cathode common wiring 17 via the lead-out wiring 36kR, the cathode pillar 40kR, the cathode pillar 40kG, and the cathode pillar 40kB, like the conductive path Rk.

[0097] Furthermore, the cathode pillar 40kG is physically in contact with the lead-out wiring 36kG. Therefore, the cathode electrode 34G is electrically connected to the cathode common wiring 17 via the lead-out wiring 36kG, the cathode pillar 40kG, and the cathode pillar 40kB, like the conductive path Rk.

[0098] Furthermore, the cathode pillar 40kB is physically in contact with the lead-out wiring 36kB. Therefore, the cathode electrode 34B is electrically connected to the cathode common wiring 17 via the lead-out wiring 36kB and the cathode pillar 40kB, like the conductive path Rk. The cathode common wiring 17 is also electrically connected to the cathode pillars 40kB of other pixel portions 8 and is also connected to the common cathode connection terminal (common terminal) of the driving driver 6.

[0099] [1-6. Method for manufacturing the LED display section] Next, an example of a manufacturing method of the LED display section 2 in the LED display device 1 will be described with reference to FIGS. 9, 10, 11, and 12. Incidentally, FIGS. 9, 10, 11, and 12 are all schematic cross-sectional views showing a state where the +Z direction is oriented upward. For convenience of explanation, here, the +Z direction is also referred to as the upward direction, and the -Z direction is also referred to as the downward direction.

[0100] [1-6-1. Manufacturing method of the first thin film layer] First, the manufacturing method of the first thin film layer 20R will be described with reference to FIG. 9. First, as shown in FIG. 9(A), the manufacturing apparatus 60 forms a lattice-matched sacrificial layer 64R on the upper side, that is, the +Z direction side, of a predetermined LED growth substrate 62R, and further performs a process of growing a thin film LED layer 66R on the upper side thereof. In the present embodiment, GaAs is used as the LED growth substrate 62R, and a material such as GaAs containing Al is used as the sacrificial layer 64R as an example.

[0101] Next, as shown in FIG. 9(B), the manufacturing apparatus 60 separates the thin film LED layer 66R from the LED growth substrate 62R by etching and removing the sacrificial layer 64R by an etching process. It is desirable to flatten the separated thin film LED layer 66R by polishing the separation surface or the like.

[0102] Next, as shown in FIG. 9(C), the manufacturing apparatus 60 sequentially forms a sacrificial layer 70R and an underlying transparent insulating material 26R on a forming substrate 68R of the first thin film layer 20R, and joins the thin film LED layer 66R to the underlying transparent insulating material 26R by intermolecular force. At this time, since the upper surfaces (+Z direction side surfaces) of the sacrificial layer 70R and the underlying transparent insulating material 26R need to be flat with Rpv = 10 [nm] or less, the manufacturing apparatus 60 may perform a smoothing process such as polishing.

[0103] Next, as shown in FIG. 9(D), the manufacturing apparatus 60 forms a thin film LED 30R by etching the thin film LED layer 66R by an etching process, and patterns the underlying transparent insulating material openings 48aG, 48aB1 (FIG. 5), and 48R (FIG. 5) of the underlying transparent insulating material 26R.

[0104] Next, as shown in FIG. 9(E), the manufacturing apparatus 60 performs a patterning process by a method such as lithography or sputtering, and forms an anode electrode 32R, a cathode electrode 34R, interlayer insulating films 38kR and 38aR (FIG. 5), lead-out wirings 36kR and 36aR, contact metals 46aPL1R (first conductive member), 46kR, 46aPL2R (FIG. 5), and 46aPDR (FIG. 5) on the thin-film LED 30R and the underlying transparent insulating material 26R.

[0105] Next, as shown in FIG. 9(F), the manufacturing apparatus 60 performs embedding with the transparent insulating material 28R, patterns the transparent insulating material openings 50aG, 50kR, and 50aB1 (FIG. 5) in the transparent insulating material 28R, and then forms a barrier layer 54aPL1R, a barrier layer 54kR, and a barrier layer (not shown) in each of the transparent insulating material openings 50aG, 50kR, and 50aB1 (FIG. 5) by a method such as sputtering, vapor deposition, or electroless plating. Next, the manufacturing apparatus 60 forms a seed metal 56aPL1R, a seed metal 56kR, and a seed metal (not shown) on each of the barrier layers 54aPL1R, 54kR, and the barrier layer (not shown) in the transparent insulating material openings 50aG, 50kR, and 50aB1 (FIG. 5) by a method such as sputtering, vapor deposition, or electroless plating. Next, the manufacturing apparatus 60 performs a plating process to grow plating portions 58aPL1R, 58kR, and a plating portion (not shown) that are conductive materials on each of the seed metals 56aPL1R, 56kR, and the seed metal (not shown) in the transparent insulating material openings 50aG, 50kR, and 50aB1 (FIG. 5). Thereby, the manufacturing apparatus 60 forms an anode pillar 42aG, a cathode pillar 40kR, and an anode pillar 42aB1 (FIG. 5) as the second conductive member on each of the contact metals 46aPL1R, 46kR, and 46aPL2R (FIG. 5) exposed from the transparent insulating material openings 50aG, 50kR, and 50aB1 (FIG. 5). Also, the contact metal 46aPDR (FIG. 5) becomes the anode pad 44R.

[0106] Next, as shown in FIG. 9(G), the manufacturing apparatus 60 performs a planarization process by chemical mechanical polishing (CMP), and planarizes the upper surfaces of the transparent insulating material 28R, the anode pillar 42aG, the cathode pillar 40kR, and the anode pillar 42aB1 (FIG. 5). By doing so, the anode pillar upper surfaces 42aGS1 and 42aB1S1 (FIG. 5) are formed on the upper surfaces of the anode pillars 42aG and 42aB1 (FIG. 5), respectively, and the cathode pillar upper surface 40kRS1 is formed on the upper surface of the cathode pillar 40kR so as to be exposed from the upper surface of the transparent insulating material 28R.

[0107] [1-6-2. Manufacturing Method of Second Thin Film Layer] Next, the manufacturing method of the second thin film layer 20G will be described with reference to FIG. 10. First, as shown in FIG. 10(A), the manufacturing apparatus 60 performs a process of growing a thin film LED layer 66G on the upper side, that is, the +Z direction side, of a predetermined LED growth substrate 62G. In the present embodiment, a sapphire substrate is used as an example of the LED growth substrate 62G.

[0108] Next, as shown in FIG. 10(B), the manufacturing apparatus 60 separates the thin film LED layer 66G from the LED growth substrate 62G by a known laser lift-off method. It is desirable to planarize the separated thin film LED layer 66G by polishing the separation surface or the like.

[0109] Next, as shown in FIG. 10(C), the manufacturing apparatus 60 sequentially forms a sacrificial layer 70G and a base transparent insulating material 26G as a first insulating layer on the formation substrate 68G of the second thin film layer 20G, and joins the thin film LED layer 66G to the base transparent insulating material 26G by intermolecular force. At this time, since the upper surfaces (+Z direction side surfaces) of the sacrificial layer 70G and the base transparent insulating material 26G need to be flat with Rpv = 10 [nm] or less, the manufacturing apparatus 60 may perform a smoothing process such as polishing.

[0110] Next, as shown in FIG. 10(D), the manufacturing apparatus 60 forms the thin-film LED 30G by etching the thin-film LED layer 66G by an etching process, and also performs patterning of the base transparent insulating material openings 48G, 48kG, and 48aB2 (FIG. 5) of the base transparent insulating material 26G.

[0111] Next, as shown in FIG. 10(E), the manufacturing apparatus 60 performs a patterning process by a method such as lithography or sputtering, and forms an anode electrode 32G, a cathode electrode 34G, interlayer insulating films 38kG and 38aG, lead-out wirings 36kG and 36aG, a contact metal 46aPDG, a contact metal 46kG as a conductive material, and a contact metal 46aPLG (FIG. 5) on the thin-film LED 30G and the base transparent insulating material 26G.

[0112] Next, as shown in FIG. 10(F), the manufacturing apparatus 60 performs embedding with the transparent insulating material 28G as the second insulating layer and performs patterning of the transparent insulating material openings 50kG and 50aB2 (FIG. 5) in the transparent insulating material 28G, and then forms a barrier layer 54kG and a barrier layer (not shown) in each of the transparent insulating material openings 50kG and 50aB2 (FIG. 5) by a method such as sputtering, vapor deposition, or electroless plating. Next, the manufacturing apparatus 60 forms a seed metal 56kG and a seed metal (not shown) on each of the barrier layer 54kG and the barrier layer (not shown) in the transparent insulating material openings 50kG and 50aB2 (FIG. 5) by a method such as sputtering, vapor deposition, or electroless plating. Next, the manufacturing apparatus 60 performs a plating process to grow a plating portion 58kG and a plating portion (not shown) as a conductive material on each of the seed metal 56kG and the seed metal (not shown) in the transparent insulating material openings 50kG and 50aB2 (FIG. 5). Thereby, the manufacturing apparatus 60 forms a cathode pillar 40kG (conductive material) and an anode pillar 42aB2 (FIG. 5) on each of the contact metals 46kG and 46aPLG (FIG. 5) exposed from the transparent insulating material openings 50kG and 50aB2 (FIG. 5). Further, the contact metal 46aPDG (FIG. 4) becomes the anode pad 44G.

[0113] Next, as shown in Fig. 10(G), the manufacturing apparatus 60 performs a planarization process by chemical mechanical polishing (CMP) to planarize the upper surfaces of the transparent insulating material 28G, the cathode pillar 40kG, and the anode pillar 42aB2 (Fig. 5), thereby forming a cathode pillar upper surface 40kGS1 on the upper surface of the cathode pillar 40kG and an anode pillar upper surface 42aB2S1 (Fig. 5) on the upper surface of the anode pillar 42aB2 so as to be exposed from the upper surface of the transparent insulating material 28G.

[0114] [1-6-3. Manufacturing Method of Third Thin Film Layer] Next, the manufacturing method of the third thin film layer 20B will be described with reference to Fig. 11. First, as shown in Fig. 11(A), the manufacturing apparatus 60 performs a process of growing a thin film LED layer 66B on the upper side, that is, the +Z direction side, of a predetermined LED growth substrate 62B. In the present embodiment, a sapphire substrate is used as an example of the LED growth substrate 62B.

[0115] Next, as shown in Fig. 11(B), the manufacturing apparatus 60 separates the thin film LED layer 66B from the LED growth substrate 62B by a known laser lift-off method. It is desirable to planarize the separated thin film LED layer 66B by polishing the separation surface or the like.

[0116] Next, as shown in Fig. 11(C), the manufacturing apparatus 60 sequentially forms a sacrificial layer 70G and an underlying transparent insulating material 26B on a formation substrate 68B of the third thin film layer 20B, and joins the thin film LED layer 66B to the underlying transparent insulating material 26B by intermolecular force. At this time, since the upper surfaces (+Z direction side surfaces) of the sacrificial layer 70B and the underlying transparent insulating material 26B need to be flat with Rpv = 10 [nm] or less, the manufacturing apparatus 60 may perform a smoothing process such as polishing.

[0117] Next, as shown in Fig. 11(D), the manufacturing apparatus 60 etches the thin film LED layer 66B by an etching process to form a thin film LED 30B and pattern the underlying transparent insulating material openings 48kB and 48B (Fig. 5) of the underlying transparent insulating material 26B.

[0118] Next, as shown in FIG. 11(E), the manufacturing apparatus 60 performs a patterning process by a method such as lithography or sputtering, and forms an anode electrode 32B, a cathode electrode 34B, interlayer insulating films 38kB and 38aB (FIG. 5), lead-out wirings 36kB and 36aB, contact metals 46kB, and 46aPDB (FIG. 5) on the thin-film LED 30B and the underlying transparent insulating material 26B.

[0119] Next, as shown in FIG. 11(F), the manufacturing apparatus 60 embeds with the transparent insulating material 28B and patterns the transparent insulating material opening 50kB in the transparent insulating material 28B, and then forms a barrier layer 54kB in the transparent insulating material opening 50kB by a method such as sputtering, vapor deposition, or electroless plating. Next, the manufacturing apparatus 60 forms a seed metal 56kB on the barrier layer 54kB in the transparent insulating material opening 50kB by a method such as sputtering, vapor deposition, or electroless plating. Next, the manufacturing apparatus 60 performs a plating process to grow a plated portion 58kB, which is a conductive material, on the seed metal 56kB in the transparent insulating material opening 50kB. Thereby, the manufacturing apparatus 60 forms a cathode pillar 40kB on the contact metal 46kB exposed from the transparent insulating material opening 50kB. Further, the contact metal 46aPDB (FIG. 5) becomes an anode pad 44B. Finally, as shown in FIG. 11(G), the manufacturing apparatus 60 forms a cathode common wiring 17 on the upper surface of the transparent insulating material 28B.

[0120] [1-6-4. Process of laminated bonding] Next, a process of laminated bonding in which the first thin-film layer 20R, the second thin-film layer 20G, and the third thin-film layer 20B manufactured by the above-described manufacturing method are laminated on the circuit board 10 will be described with reference to FIG. 12.

[0121] First, as shown in Fig. 12(A), the manufacturing apparatus 60 separates the first thin film layer 20R from the formation substrate 68R by etching and removing the sacrificial layer 70R (Fig. 9) by an etching process. As a result, the lower surface 42aGS2 of the anode pillar, the lower surface 42aB1S2 of the anode pillar (Fig. 5), and the surface 44RS of the anode pad (Fig. 5) are exposed from the lower surface (-Z direction side surface) of the underlying transparent insulating material 26R. These lower surface 42aGS2 of the anode pillar, the lower surface 42aB1S2 of the anode pillar (Fig. 5), and the surface 44RS of the anode pad are formed flat on the same plane following the upper surface of the sacrificial layer 70R (Fig. 9). Subsequently, the manufacturing apparatus 60 bonds the separated first thin film layer 20R to the upper surface of the circuit board 10 by a known bonding method with intermolecular forces.

[0122] Next, as shown in Fig. 12(B), the manufacturing apparatus 60 separates the second thin film layer 20G from the formation substrate 68G by etching and removing the sacrificial layer 70G (Fig. 10) by an etching process. As a result, the lower surface 40kGS2 of the cathode pillar, the surface 44GS of the anode pad, and the lower surface 42aB2S2 of the anode pillar (Fig. 5) are exposed from the lower surface (-Z direction side surface) of the underlying transparent insulating material 26G. These lower surface 40kGS2 of the cathode pillar, the surface 44GS of the anode pad, and the lower surface 42aB2S2 of the anode pillar (Fig. 5) are formed flat on the same plane following the upper surface of the sacrificial layer 70G (Fig. 10). Subsequently, the manufacturing apparatus 60 bonds the separated second thin film layer 20G to the upper surface of the first thin film layer 20R bonded to the circuit board 10 in Fig. 12(A) by a known bonding method with intermolecular forces.

[0123] Next, as shown in FIG. 12(C), the manufacturing apparatus 60 separates the third thin film layer 20B from the formation substrate 68B by etching and removing the sacrificial layer 70B (FIG. 11) through an etching process. As a result, the lower surface 40kBS2 of the cathode pillar and the surface 44BS of the anode pad (FIG. 5) are exposed from the lower surface (-Z direction side surface) of the underlying transparent insulating material 26B. The lower surface 40kBS2 of the cathode pillar and the surface 44BS of the anode pad (FIG. 5) are formed flat on the same plane following the upper surface of the sacrificial layer 70B (FIG. 11). Subsequently, the manufacturing apparatus 60 bonds the separated third thin film layer 20B to the upper surface of the second thin film layer 20G bonded to the first thin film layer 20R in FIG. 12(B) by a known bonding method with intermolecular forces.

[0124] [1-7. Operation] In such a configuration, when driving the LED display unit 2 of the LED display device 1, power, a clock signal, image data, etc. are input from an external circuit (not shown) to the drive driver 6 via the connection terminal unit 5. Subsequently, the LED display device 1 selectively supplies on-off signals and drive currents of the active elements 14R, 14G, and 14B from the drive driver 6 to the wiring layer 16 of the circuit board 10. The supplied drive current passes through the vertical direction wirings 22R, 22G, and 22B and the lead-out wirings 36 in each thin film layer (the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B) via the connection pads 12, and is supplied to the thin film LEDs 30R, 30G, and 30B according to the on-off states of the active elements 14R, 14G, and 14B. As a result, the LED display unit 2 emits light.

[0125] [1-8. Difference between Passive Matrix Method and Active Matrix Method] The driving methods of LED display devices are roughly classified into two types: the passive matrix method and the active matrix method.

[0126] The passive matrix method is a method of lighting only the pixels at the intersections of the matrix wiring of the vertical wiring (signal input electrodes) and the horizontal wiring (scanning electrodes). The LED display device using the passive matrix method controls the light emission line by line in a time-division manner by scanning the scanning electrodes.

[0127] On the other hand, the active matrix method is a method of arranging a switching element (also called an active element) including a transistor and a capacitor in each pixel of the LED display section, and controlling the on / off of the pixel by applying a gate voltage to the transistor. The pixels that are turned on are charged in the capacitor of the active element, and can maintain the on state of light emission even when not selected by the scanning electrode. The active matrix method has advantages such as shorter response time, clearer color rendering, and longer element life compared to the passive matrix method, and is adopted in many of the displays used in daily life. In the LED display device using the active matrix method, one active element is connected to the terminal of the light-emitting element for one sub-pixel. Therefore, it is common to arrange the active elements in a matrix on the circuit board and bond and form the light-emitting elements on each of the active matrix elements.

[0128] When the display device described in Patent Document 1 is applied to a full-color display device in which three sub-pixels of red, green, and blue overlap in the vertical direction (light emission direction), it has three circuit boards for each layer. That is, the display device of Patent Document 1 requires three active matrix circuit boards, which increases the size in the light emission direction and impairs the merits of the self-emitting display, and is expensive.

[0129] The stacked light-emitting device described in Patent Document 2 has one circuit board, while it is difficult to manufacture as an active matrix type. In the stacked light-emitting device of Patent Document 2, after the first-layer LED is covered with wiring and a transparent material with respect to the circuit board, a planarization process such as polishing is performed. Next, in the stacked light-emitting device of Patent Document 2, the LEDs of the second and third layers are bonded and wired on the planarized transparent material, but there is no means for connecting this wiring to the active elements of the circuit board for each sub-pixel. Therefore, the stacked light-emitting device of Patent Document 2 is an invention premised on a passive matrix method in which the wiring is directly connected to a driving driver outside the light-emitting surface of the display. Further, if the stacked light-emitting device of Patent Document 2 tries to adopt a method of providing vias that can be connected to the lower part for each pixel in the transparent material, it is obvious that the flatness at the time of bonding the LEDs by intermolecular force is impaired and the bonding yield is significantly reduced.

[0130] For this reason, there is a demand for a stacked LED display device of an active matrix type that is inexpensive, has a high density, and has a higher image quality than the passive matrix method, in which the light-emitting elements overlap in the light-emitting direction.

[0131] [1-9. Effect] In the LED display device 1 having the above configuration, in the first thin film layer 20R, a first thin film layer opening 52aG is formed from the upper surface 20RS1 of the first thin film layer facing the second thin film layer 20G with respect to the light-emitting direction De to the lower surface 20RS2 of the first thin film layer facing the circuit board 10, and an anode pillar 42aG as a conductive portion is disposed in the first thin film layer opening 52aG, and the anode electrode 32G of the thin film LED 30G and the connection pad 12G of the circuit board 10 are electrically connected via the anode pillar 42aG.

[0132] Also, in the first thin film layer 20R of the LED display device 1, in a region that does not overlap with the first thin film layer opening 52aG when viewed from the light emission direction De, a first thin film layer opening 52aB1 as a second opening is formed from the upper surface 20RS1 of the first thin film layer to the lower surface 20RS2 of the first thin film layer, and an anode pillar 42aB1 as a conductive portion is disposed in the first thin film layer opening 52aB1. In the second thin film layer 20G of the LED display device 1, in a region that overlaps with the first thin film layer opening 52aB1 when viewed from the light emission direction De, a second thin film layer opening 52aB2 as a third opening is formed from the upper surface 20GS1 of the second thin film layer as a fourth surface to the lower surface 20GS2 of the second thin film layer as a third surface, and an anode pillar 42aB2 as a conductive portion is disposed in the second thin film layer opening 52aB2. Then, the LED display device 1 electrically connects the anode electrode 32B of the thin film LED 30B and the connection pad 12B of the circuit board 10 via the anode pillars 42aB1 and 42aB2.

[0133] Furthermore, in the first thin film layer 20R of the LED display device 1, in a region that does not overlap with the first thin film layer opening 52aG, the first thin film layer opening 52aB1, and the second thin film layer opening 52aB2 when viewed from the light emission direction De, an anode pad 44R is disposed, and the anode electrode 32R of the thin film LED 30R and the connection pad 12R of the circuit board 10 are electrically connected via the anode pad 44R.

[0134] Thereby, the LED display device 1 can supply current from the circuit board 10 to the anode electrodes 32R, 32G, and 32B of the thin film LEDs 30R, 30G, and 30B stacked in the light emission direction De, respectively.

[0135] Furthermore, in the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B of the LED display device 1, vertical wirings 22K composed of cathode pillars 40kR, 40kG, and 40kB are arranged in regions that do not overlap with the first thin film layer openings 52aG and 52aB1, the second thin film layer opening 52aB2, and the anode pad 44R when viewed from the light emission direction De. The cathode electrodes 34R of the thin film LEDs 30R, the cathode electrodes 34G of the thin film LEDs 30G, and the cathode electrodes 34B of the thin film LEDs 30B are electrically connected to the cathode common wiring 17 via the cathode pillars 40aR, 40aG, and 40aB. Thereby, the LED display device 1 can cause current to flow from the cathode electrodes 34R, 34G, and 34B of the thin film LEDs 30R, 30G, and 30B stacked in the light emission direction De to the cathode common wiring 17 respectively.

[0136] Furthermore, in the first thin film layer 20R of the LED display device 1, a lead-out wiring 36aR is provided as a first lead-out wire that extends from the anode electrode 32R as one-polarity terminal of the thin film LED 30R in the -X + Y direction (FIG. 6) as the first direction and electrically connects the thin film LED 30R and the connection pad 12R of the circuit board 10. Furthermore, in the second thin film layer 20G of the LED display device 1, a lead-out wiring 36aG is provided as a second lead-out wire that extends from the anode electrode 32G as one-polarity terminal of the thin film LED 30G in the +X + Y direction (FIG. 7) as a second direction different from the -X + Y direction toward the first thin film layer opening 52aG and electrically connects the thin film LED 30G and the connection pad 12G of the circuit board 10 via the anode pillar 42aG of the first thin film layer opening 52aG. That is, when viewed from the Z direction, the LED display device 1 is configured such that the lead-out wiring 36aR and the lead-out wiring 36aG extend in different directions from each other and have regions that do not overlap with each other.

[0137] Furthermore, in the first thin film layer 20R, the LED display device 1 is configured to provide a lead wiring 36kR as a third lead extending in the -X - Y direction (FIG. 6), which is a third direction different from the -X + Y direction and the +X + Y direction, from the cathode electrode 34R as the other polar terminal of the thin film LED 30R. Further, in the second thin film layer 20G, the LED display device 1 is configured to provide a lead wiring 36kG as a fourth lead extending in the -X - Y direction (FIG. 7) from the cathode electrode 34G as the other polar terminal of the thin film LED 30G and electrically connected to the lead wiring 36kR.

[0138] In this way, the LED display device 1 conducts the anode electrodes 32R, 32G, and 32B and the circuit board 10 through the vertical wirings 22R, 22G, and 22B provided at different positions when viewed from the light emission direction De in each thin film layer 20, and conducts the cathode electrodes 34R, 34G, and 34B and the cathode common wiring 17 through the vertical wiring 22K provided at a position different from the vertical wirings 22R, 22G, and 22B when viewed from the light emission direction De in each thin film layer 20.

[0139] Thereby, the LED display device 1 can control the light emission of the thin film LED 30R in the first thin film layer 20R, control the light emission of the thin film LED 30G in the second thin film layer 20G where the thin film LED 30G is arranged so as to overlap with the thin film LED 30R in the light emission direction De with the first thin film layer 20R interposed between the thin film LED 30R and the circuit board 10, and control the light emission of the thin film LED 30B in the third thin film layer 20B where the thin film LED 30B is arranged so as to overlap with the thin film LEDs 30R and 30G in the light emission direction De with the first thin film layer 20R and the second thin film layer 20G interposed between the thin film LEDs 30R and 30G and the circuit board 10, by the circuit board 10. Thus, the LED display device 1 can perform active matrix driving in a stacked light emitting device, and can obtain the advantages of the active matrix driving method in the LED display section 2 having high-density pixels.

[0140] According to the above configuration, the LED display device 1 includes a first thin film layer 20R in which a thin film LED 30R as a first light emitting element is disposed, a second thin film layer 20G laminated on the first thin film layer 20R, and when viewed from a light emitting direction De orthogonal to the light emitting surface of the thin film LED 30R, the second thin film layer 20G includes a thin film LED 30G as a second light emitting element that overlaps at least a part of the thin film LED 30R, and a circuit board 10 laminated with the first thin film layer 20R for controlling the light emission of the thin film LED 30R and the thin film LED 30G. The first thin film layer 20R is formed with a first thin film layer opening 52aG as a first opening from a first thin film layer upper surface 20RS1 as a first surface facing the second thin film layer 20G in the light emitting direction De to a first thin film layer lower surface 20RS2 as a second surface facing the circuit board 10. The thin film LED 30G and the circuit board 10 are electrically connected through the first thin film layer opening 52aG.

[0141] Thereby, in the LED display device 1, with the first thin film layer 20R sandwiched between the circuit board 10, the light emission of the thin film LED 30G disposed in the second thin film layer 20G laminated in the light emitting direction De so as to overlap the thin film LED 30R can be controlled by the circuit board 10.

[0142] [2. Second Embodiment] [2-1. Laminating and Bonding Process] As shown in FIG. 13 in which members corresponding to those in FIG. 12 are given the same reference numerals, the LED display device 1 according to the second embodiment has a different laminating and bonding process for laminating the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B on the circuit board 10 as compared with the LED display device 1 according to the first embodiment, but is otherwise configured in the same manner.

[0143] First, as shown in Fig. 13(A), the manufacturing apparatus 60 separates the second thin film layer 20G from the formation substrate 68G by etching and removing the sacrificial layer 70G (Fig. 10) through an etching process. As a result, the lower surface 40kGS2 of the cathode pillar, the upper surface 44GS of the anode pad, and the lower surface 42aB2S2 of the anode pillar (Fig. 5) are exposed from the lower surface (-Z direction side surface) of the underlying transparent insulating material 26G. These lower surface 40kGS2 of the cathode pillar, the upper surface 44GS of the anode pad, and the lower surface 42aB2S2 of the anode pillar (Fig. 5) are formed flat on the same plane following the upper surface of the sacrificial layer 70G (Fig. 10). Subsequently, the manufacturing apparatus 60 bonds the separated second thin film layer 20G to the upper surface of the first thin film layer 20R on the formation substrate 68R by intermolecular force using a known bonding method.

[0144] Next, as shown in Fig. 13(B), the manufacturing apparatus 60 separates the third thin film layer 20B from the formation substrate 68B by etching and removing the sacrificial layer 70B (Fig. 11) through an etching process. As a result, the lower surface 40kBS2 of the cathode pillar and the upper surface 44BS of the anode pad (Fig. 5) are exposed from the lower surface (-Z direction side surface) of the underlying transparent insulating material 26B. These lower surface 40kBS2 of the cathode pillar and the upper surface 44BS of the anode pad (Fig. 5) are formed flat on the same plane following the upper surface of the sacrificial layer 70B (Fig. 11). Subsequently, the manufacturing apparatus 60 bonds the separated third thin film layer 20B to the upper surface of the second thin film layer 20G bonded to the first thin film layer 20R in Fig. 13(A) by intermolecular force using a known bonding method.

[0145] Next, as shown in FIG. 13(C), the manufacturing apparatus 60 etches and removes the sacrificial layer 70R (FIG. 9) by an etching process, thereby separating the first thin film layer 20R, in which the second thin film layer 20G and the third thin film layer 20B are joined in FIGS. 13(A) and 13(B), from the formation substrate 68R. As a result, the lower surface 42aGS2 of the anode pillar, the lower surface 42aB1S2 of the anode pillar (FIG. 5), and the surface 44RS of the anode pad (FIG. 5) are exposed from the lower surface (the surface on the -Z direction side) of the underlying transparent insulating material 26R. The lower surface 42aGS2 of the anode pillar, the lower surface 42aB1S2 of the anode pillar (FIG. 5), and the surface 44RS of the anode pad are formed flat on the same plane following the upper surface of the sacrificial layer 70R (FIG. 9). Subsequently, the manufacturing apparatus 60 bonds the separated first thin film layer 20R, in which the second thin film layer 20G and the third thin film layer 20B are joined, to the circuit board 10 by a known bonding method with intermolecular forces.

[0146] The LED display device 1 according to the second embodiment can achieve the same operational effects as the LED display device 1 according to the first embodiment.

[0147] [3. Third Embodiment] [3-1. Configuration of Semiconductor Structure] As shown in FIGS. 14 and 15, in which members corresponding to FIGS. 4 and 5 are denoted by the same reference numerals, the semiconductor structure 72 according to the third embodiment is different in that a support substrate 74 is provided instead of the circuit board 10 as compared with the LED display device 1 according to the first embodiment, but is otherwise configured in the same manner. Thus, the semiconductor structure 72 has a configuration in which a thin film layer group 18 composed of three thin film layers, i.e., the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B, is laminated on the support substrate 74.

[0148] [3-2. Process of Laminating and Bonding] As shown in FIG. 16 in which members corresponding to those in FIG. 12 are given the same reference numerals, the semiconductor structure 72 according to the third embodiment is different in that a support substrate 74 is provided instead of the circuit board 10, compared with the LED display device 1 according to the first embodiment, but is otherwise configured in the same manner. For this reason, the description of the step of laminating and bonding the semiconductor structure 72 according to the third embodiment will be omitted.

[0149] [3-3. Effects, etc.] The semiconductor structure 72 according to the third embodiment can exhibit the same operational effects as the LED display device 1 according to the first embodiment.

[0150] According to the above configuration, the semiconductor structure 72 includes a support substrate 74 as a base material, a first thin film layer 20R as a first layer provided on the support substrate 74 and including a thin film LED 30R as a first light-emitting element, and a second thin film layer 20G as a second layer laminated on the first thin film layer 20R and including a thin film LED 30G as a second light-emitting element that overlaps at least a part of the thin film LED 30R when viewed in the lamination direction. Here, when the opening is the first thin film layer opening 52aG (FIG. 14), the first electrode becomes the anode pillar 42aG and the second electrode becomes the anode pad 44G. On the other hand, when the opening is the first thin film layer opening 52aB1 (FIG. 15), the first electrode becomes the anode pillar 42aB1 and the second electrode becomes the anode pillar 42aB2.

[0151] [4. Fourth Embodiment] [4-1. Step of Laminating and Bonding] As shown in FIG. 17 in which members corresponding to those in FIGS. 13 and 16 are given the same reference numerals, the semiconductor structure 72 according to the fourth embodiment is different in the step of laminating and bonding the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B to the support substrate 74, compared with the semiconductor structure 72 according to the third embodiment, but is otherwise configured in the same manner.

[0152] The process of laminating and bonding the semiconductor structure 72 according to the fourth embodiment is different in that a support substrate 74 is provided instead of the circuit board 10, compared with the process of laminating and bonding the LED display device 1 according to the second embodiment (FIG. 13), but the other points are configured in the same manner. Therefore, the description of the process of laminating and bonding the semiconductor structure 72 according to the fourth embodiment is omitted.

[0153] [4-2. Effects, etc.] The semiconductor structure 72 according to the fourth embodiment can exhibit the same operational effects as the semiconductor structure 72 according to the third embodiment.

[0154] [5. Other Embodiments] In the first embodiment described above, the case where the anode electrode 32G of the thin-film LED 30G and the connection pad 12G of the circuit board 10 are electrically connected through the anode pillar 42aG formed inside the first thin-film layer opening 52aG of the first thin-film layer 20R has been described. The present invention is not limited to this, and various wirings may be formed inside the first thin-film layer opening 52aG of the first thin-film layer 20R, and the anode electrode 32G of the thin-film LED 30G and the connection pad 12G of the circuit board 10 may be electrically connected through the wirings. In short, as long as the first thin-film layer opening 52aG is formed in the first thin-film layer 20R, and the anode electrode 32G of the thin-film LED 30G and the connection pad 12G of the circuit board 10 are electrically connected through various conductive conduction portions (electrodes) provided inside the thin-film layer opening 52aG. The same applies to the first thin-film layer opening 52aB1, the second thin-film layer openings 52kG and 52aB2, and the third thin-film layer opening 52kB. The same also applies to the second embodiment.

[0155] Also, in the first embodiment described above, the case where the thin-film LEDs 30R, 30G, and 30B are laminated so that their centers coincide with each other when viewed from the Z direction has been described. The present invention is not limited to this, and the thin-film LEDs 30R, 30G, and 30B may be laminated so that at least a part of them overlaps when viewed from the Z direction. The same also applies to the second to fourth embodiments.

[0156] Furthermore, in the first embodiment described above, the case where the thin-film LEDs 30R, 30G, and 30B are formed to have the same size as each other in plan view has been described. The present invention is not limited to this, and for example, the thin-film LED 30R may be made larger than the thin-film LED 30B, or conversely, the thin-film LED 30B may be made larger than the thin-film LED 30R, and they may have different sizes from each other. The key point is that at least a part of them should overlap when viewed from the Z direction. The same applies to the second to fourth embodiments.

[0157] Furthermore, in the first embodiment described above, the case where the thin-film LEDs 30R, 30G, and 30B emit light with a shorter wavelength from the -Z direction side toward the +Z direction side has been described. The present invention is not limited to this, and for example, the arrangement of the thin-film LEDs 30R, 30G, and 30B may be interchanged according to the luminous efficiency of each light-emitting element of the thin-film LEDs 30R, 30G, and 30B. The same applies to the second to fourth embodiments.

[0158] Furthermore, in the first embodiment described above, the case where the cathode common wiring 17 is formed on the upper surface 20BS1 of the third thin-film layer has been described. The present invention is not limited to this, and the cathode common wiring 17 may be wired on the substrate surface 10S or inside the circuit board 10 or the like. When the cathode common wiring 17 is wired inside the circuit board 10, a connection pad for the cathode may be provided on the substrate surface 10S, and it may be structured to connect to the lower surface of the cathode pillar 40kR of the first thin-film layer 20R. Also in that case, the connection pad 12NC may be structured to be assigned as a cathode pad that does not connect to the active element. The same applies to the second embodiment.

[0159] Furthermore, in the first embodiment described above, the case where the connection pad 12NC is not connected to any anode has been described. The present invention is not limited to this. The connection pad 12NC may be connected to any one of the thin-film LEDs 30R, 30G, or 30B that are bottlenecks in color balance, and power may be supplied from two connection pads 12, i.e., any one of the connection pads 12R, 12G, or 12B and the connection pad 12NC, to increase the maximum emission intensity or the like. Furthermore, the connection pad 12NC in the above-described embodiment may be omitted without being formed. The same applies to the second embodiment.

[0160] Furthermore, in the first embodiment described above, the case where the film size of each thin-film layer 20 is equivalent to the display size of the LED display unit 2 has been described. The present invention is not limited to this. While maintaining the same number and pitch of pixels as the entire display for the pixels themselves included in each thin-film layer 20, for example, the film of the third thin-film layer 20B may be divided, such as into two equal parts, so that the film size becomes half of the display size. For example, when divided into two parts, the number of pixels included in the third thin-film layer 20B becomes half of the case where the third thin-film layer 20B has the size of the entire display. In that case, the number of pixels included in each thin-film layer 20 can be any number of pixels from one pixel to the total number of pixels of the entire display, and in principle, it is possible to manufacture. Also, in that case, since the film size of the third thin-film layer 20B becomes smaller, it becomes easier to align the film of the thin-film layer 20 when overlapping and joining it to the film of another thin-film layer 20. The same applies to the second to fourth embodiments.

[0161] Furthermore, in the first embodiment described above, in the manufacturing method of the first thin film layer 20R (FIG. 9(C)), the case where the thin film LED layer 66R is etched by an etching process (FIG. 9(D)) after the thin film LED layer 66R is integrally bonded to the underlying transparent insulating material 26R was described. The present invention is not limited to this. In a state where the thin film LED layer 66R exists above the LED growth substrate 62R in FIG. 9(A), processing and wiring may be performed on the thin film LED layer 66R, and then the thin film LED layer 66R may be bonded to the underlying transparent insulating material 26R. The same applies to the manufacturing methods of the second thin film layer 20G and the third thin film layer 20B. However, in practice, when the pixel size becomes small, this method becomes highly difficult. The same applies to the second to fourth embodiments.

[0162] Furthermore, in the first embodiment described above, the case where the active element 14 is constituted by two MOS transistors and one capacitor was described. The present invention is not limited to this. The active element 14 may be added with circuits having various other functions such as a circuit for performing gradation control, a compensation circuit, and a redundant circuit with respect to the two MOS transistors and one capacitor which are the basic structure. The same applies to the second embodiment.

[0163] Furthermore, in the first embodiment described above, the case where the drive driver 6 is mounted on the surface of the circuit board 10 was described. The present invention is not limited to this. The drive driver 6 may be mounted on the surface of the connection cable 4, or the drive driver 6 may be formed by a CMOS circuit by a semiconductor process inside the circuit board 10. The same applies to the second embodiment.

[0164] Furthermore, in the first embodiment described above, the case where the circuit board 10 is constituted by a CMOS circuit board was described. The present invention is not limited to this. The circuit board 10 may be constituted by a thin film transistor (TFT) circuit board. The same applies to the second embodiment.

[0165] Furthermore, in the first embodiment described above, like the pixel portion 108 shown in FIGS. 18 and 19, to which the same reference numerals are assigned as the members corresponding to FIGS. 4 and 5, the contact metals 46kR, 46aPL1R, 46aPL2R, 46aPDR, 46kG, 46aPLG, 46aPDG, 46kB, 46aPDB may be omitted. In that case, the lower surface of the barrier layer of the cathode pillar 40kR (FIG. 18) is the cathode pillar lower surface 40kRS2, the lower surface of the barrier layer of the anode pillar 42aG (FIG. 18) is the anode pillar lower surface 42aGS2, the lower surface of the barrier layer of the anode pillar 42aB1 (FIG. 19) is the anode pillar lower surface 42aB1S2, the lower surface of the lead wiring 36aR (FIG. 19) is the anode pad surface 44RS, the lower surface of the barrier layer of the cathode pillar 40kG (FIG. 18) is the cathode pillar lower surface 40kGS2, the lower surface of the barrier layer of the anode pillar 42aB2 (FIG. 19) is the anode pillar lower surface 42aB2S2, the lower surface of the lead wiring 36aG (FIG. 18) is the anode pad surface 44GS, the lower surface of the barrier layer of the cathode pillar 40kB (FIG. 18) is the cathode pillar lower surface 40kBS2, and the lower surface of the lead wiring 36aB (FIG. 18) is the anode pad surface 44BS. The same applies to the second to fourth embodiments.

[0166] Furthermore, in the first embodiment described above, for example, the case where the cathode pillar 40kR (FIG. 9) is configured by providing a barrier layer 54kR, a seed metal 56kR, and a plating portion 58kR on the contact metal 46kR was described. The present invention is not limited to this, and the cathode pillar 40kR may be composed of a single metal by a plating method using the contact metal 46kR as a seed metal, a sputtering method, chemical vapor deposition (CVD), or the like. The same applies to the anode pillar 42aG, the anode pillar 42aB1, the cathode pillar 40kG, the anode pillar 42aB2, and the cathode pillar 40kB. The same also applies to the second to fourth embodiments.

[0167] Furthermore, in the first embodiment described above, the case where the LED display unit 2 is provided with three thin film layers, i.e., the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B, has been described. The present invention is not limited to this. A fourth thin film layer or a fifth thin film layer may be joined to the third thin film layer 20B to expand the light output and color gamut. Alternatively, only any two of the three thin film layers 20 of the first thin film layer 20R, the second thin film layer 20G, and the third thin film layer 20B may be combined to form a two-color display. That is, the LED display unit 2 may be provided with thin film layers 20 having an arbitrary number of layers of two or four or more, other than the three thin film layers 20. The same applies to the second to fourth embodiments.

[0168] Furthermore, in the first embodiment described above, the case where the present invention is applied to the direct-view type LED display device 1 has been described. The present invention is not limited to this. The present invention may be applied to a projector or a display used as a light source. The same applies to the second to fourth embodiments.

[0169] Furthermore, the present invention is not limited to the above-described embodiments and other embodiments. That is, the scope of application of the present invention extends to embodiments in which any one or more of the above-described embodiments and other embodiments are arbitrarily combined. Also, the present invention includes embodiments in which a part of the configuration described in any of the above-described embodiments and other embodiments is extracted and replaced or diverted with a part of the configuration of any of the above-described embodiments and other embodiments, and embodiments in which a part of the extracted configuration is added to any of the above-described embodiments and other embodiments.

[0170] Furthermore, in the above-described embodiment, the case where the LED display device 1 as a light emitting device is configured by the first thin film layer 20R as the first layer, the second thin film layer 20G as the second layer, and the circuit board 10 as the control board has been described. The present invention is not limited to this. A light emitting device may be configured by a first layer having various other configurations, a second layer, and a control board.

Industrial Applicability

[0171] The present invention can be used, for example, in an LED display formed by arranging a plurality of LEDs.

Description of Signs

[0172] 1... LED display device, 2... LED display unit, 3... heat dissipation member, 4... connection cable, 5... connection terminal section, 6... drive driver, 8, 108... pixel section, 10... circuit board, 10S... board surface, 10M... base material section, 11... insulating layer, 11S... insulating layer surface, 12T... connection pad set, 12R, 12G, 12B, 12NC... connection pads, 12RS, 12GS, 12BS, 12NCS... connection pad surfaces, 14R, 14G, 14B, 14NC... active elements, 16... wiring layer, 17... cathode common wiring, 18... thin film layer group, 20R... first thin film layer, 20RS1... upper surface of the first thin film layer, 20RS2... lower surface of the first thin film layer, 20G... second thin film layer, 20GS1... upper surface of the second thin film layer, 20GS2... lower surface of the second thin film layer, 20B... third thin film layer, 20BS1... upper surface of the third thin film layer, 20BS2... lower surface of the third thin film layer, 22K, 22R, 22G, 22B... vertical wiring, 24... light emitting section, 24C... center of the light emitting section, ER... circumscribed rectangle, 26R, 26G, 26B... underlying transparent insulating material, 26RS1, 26GS1, 26BS1... upper surfaces of the underlying transparent insulating material, 26RS2, 26GS2, 26BS2... lower surfaces of the underlying transparent insulating material, 28R, 28G, 28B... transparent insulating material, 28RS, 28GS, 28BS... surfaces of the transparent insulating material, 30R, 30G, 30B... thin film LEDs, 32R, 32G, 32B... anode electrodes, 34R, 34G, 34B... cathode electrodes, 36kR, 36aR, 36kG, 36aG, 36kB, 36aB... lead-out wiring, 38kR, 38aR, 38kG, 38aG, 38kB, 38aB... interlayer insulating film, 40kR, 40kG, 40kB... cathode pillars, 40kRS1, 40kGS1, 40kBS1... upper surfaces of the cathode pillars, 40kRS2, 40kGS2, 40kBS2... lower surfaces of the cathode pillars, 42aG, 42aB1, 42aB2... anode pillars, 42aGS2, 42aB1S2, 42aB2S2... lower surfaces of the anode pillars, 42aGS1, 42aB1S1, 42aB2S1... upper surfaces of the anode pillars, 44R, 44G, 44B... anode pads, 44RS, 44GS, 44BS... surfaces of the anode pads, 46kR, 46kG, 46kB, 46aPL1R, 46aPL2R, 46aPDR, 46aPLG, 46aPDG, 46aPDB... contact metals, 48aG, 48aB1,48R, 48kG, 48G, 48aB2, 48kB, 48B... openings in the underlying transparent insulating material, 50aG, 50aB1, 50kR, 50kG, 50aB2, 50kB... openings in the transparent insulating material, 52aG, 52aB1... openings in the first thin film layer, 52kG, 52aB2... openings in the second thin film layer, 52kB... openings in the third thin film layer, 54kR, 54aPL1R, 54kG, 54kB... barrier layer, 56aPL1R, 56kR, 56kG, 56kB... seed metal, 58aPL1R, 58kR, 58kG, 58kB... plating part, 60... manufacturing apparatus, 62R, 62G, 62B... LED growth substrate, 64R... sacrificial layer, 66R, 66G, 66B... thin film LED layer, 68R, 68G, 68B... forming substrate, 70R, 70G, 70B... sacrificial layer, 72... semiconductor structure, 74... support substrate, De... light emitting direction, Da... AA cross-sectional direction, Db... BB cross-sectional direction, Rra, Rba, Rga, Rk... conductive paths.,

Claims

1. a first layer in which a first light-emitting element is disposed; a second layer laminated on the first layer and including a second light-emitting element that overlaps at least a part of the first light-emitting element when viewed from a light-emitting direction orthogonal to a light-emitting surface of the first light-emitting element; a control substrate on which the first layer is laminated and that controls light emission of the first light-emitting element and the second light-emitting element and having; a first opening is formed in the first layer from a first surface facing the second layer in the light-emitting direction to a second surface facing the control substrate; the second light-emitting element and the control substrate are electrically connected through the first opening; a first lead wire provided in the first layer, extending from the first light-emitting element in a first direction, and electrically connecting the first light-emitting element and the control substrate; a second lead wire provided in the second layer, extending from the second light-emitting element in a second direction different from the first direction toward the first opening, and electrically connecting the second light-emitting element and the control substrate through the first opening a light-emitting device having.

2. A first layer in which a first light-emitting element is disposed; a second layer laminated on the first layer and including a second light-emitting element that overlaps at least a part of the first light-emitting element when viewed from a light-emitting direction orthogonal to a light-emitting surface of the first light-emitting element; a third layer laminated on the second layer and including a third light-emitting element that overlaps at least a part of the first light-emitting element and the second light-emitting element when viewed from the light-emitting direction; a control substrate on which the first layer is laminated and that controls light emission of the first light-emitting element, the second light-emitting element, and the third light-emitting element and having; a first opening is formed in the first layer from a first surface facing the second layer in the light-emitting direction to a second surface facing the control substrate; the second light-emitting element and the control substrate are electrically connected through the first opening; the control substrate, for one pixel, at least a first connection pad electrically connected to the first light-emitting element, a second connection pad electrically connected to the second light-emitting element, and a third connection pad electrically connected to the third light-emitting element are disposed; centers of the first light-emitting element, the second light-emitting element, and the third light-emitting element are disposed inside a circumscribed rectangle of at least the first connection pad, the second connection pad, and the third connection pad A light-emitting device characterized by this.

3. Further comprising a third layer laminated on the second layer and including a third light-emitting element that overlaps at least a part of the first light-emitting element and the second light-emitting element when viewed from the light-emitting direction, The control substrate is, For one pixel, at least a first connection pad electrically connected to the first light-emitting element, a second connection pad electrically connected to the second light-emitting element, and a third connection pad electrically connected to the third light-emitting element are arranged, The centers of the first light-emitting element, the second light-emitting element, and the third light-emitting element are arranged inside the circumscribed rectangle of at least the first connection pad, the second connection pad, and the third connection pad. The light-emitting device according to claim 1.

4. The first lead wire electrically connects a terminal of one polarity in the first light-emitting element to the control substrate, The second lead wire electrically connects a terminal of one polarity in the second light-emitting element to the control substrate, A third lead wire provided in the first layer and extending from a terminal of the other polarity in the first light-emitting element in a third direction different from the first direction and the second direction, A fourth lead wire provided in the second layer and extending from a terminal of the other polarity in the second light-emitting element in the third direction and electrically connected to the third lead wire The light-emitting device according to claim 1 or claim 3, further comprising.

5. An electrode for establishing conduction between the second light-emitting element and the control substrate is disposed in the first opening, The first surface is composed of at least a first insulating material covering the first light-emitting element and the electrode, The second surface is composed of at least a second insulating material on which the first light-emitting element is mounted and the electrode. The light-emitting device according to any one of claims 1 to 4.

6. On the first surface, the first insulating material and the electrode are flush, On the second surface, the second insulating material and the electrode are flush. The light-emitting device according to claim 5.

7. The surface roughness on the first surface and the second surface is 10 [nm] or less. The light-emitting device according to claim 6.

8. The electrode is, Composed by electrically connecting a first conductive member and a second conductive member, The first conductive member has a first exposed surface exposed from the first surface, The second conductive member has a second exposed surface exposed from the second surface. The light-emitting device according to any one of claims 5 to 7.

9. The first layer further includes a conductive member that conducts the first light-emitting element and the control substrate at a position different from the first opening when viewed from the light-emitting direction. The light-emitting device according to any one of claims 1 to 8.

10. The control substrate includes at least a first connection pad that conducts with the first light-emitting element, a second connection pad that conducts with the second light-emitting element, and a transistor connected to the first connection pad and the second connection pad. The light-emitting device according to any one of claims 1 to 9.

11. A third layer laminated on the second layer and including a third light-emitting element that overlaps at least a part of the first light-emitting element and the second light-emitting element when viewed from the light-emitting direction. further includes The first layer has a second opening formed from the first surface to the second surface in a region that does not overlap the first opening when viewed from the light-emitting direction. The second layer has a third opening formed from the third surface facing the first layer to the fourth surface facing the third layer in a region that overlaps the second opening when viewed from the light-emitting direction. The third light-emitting element and the control substrate are electrically connected through the second opening and the third opening. The light-emitting device according to any one of claims 1 to 10.

12. The first light-emitting element and the second light-emitting element are formed of different materials from each other. The light-emitting device according to any one of claims 1 to 11.

13. One of the first light-emitting element or the second light-emitting element is formed of a group III-V compound semiconductor material, and the other of the first light-emitting element or the second light-emitting element is formed of a GaN-based material. The light-emitting device according to any one of claims 1 to 12.

14. The first light-emitting element and the second light-emitting element have a thickness in the light-emitting direction of 3 [μm] or less. The light-emitting device according to any one of claims 1 to 13.

15. A base material, a first layer provided on the base material and including a first light-emitting element, a second layer laminated on the first layer and including a second light-emitting element that overlaps at least a part of the first light-emitting element when viewed from the lamination direction. has The first layer has an opening formed from the first surface facing the second layer in the lamination direction to the second surface facing the base material. a first electrode provided in the opening and having the second layer has a second electrode that overlaps the first electrode when viewed from the stacking direction having a first lead wire provided in the first layer and extending from the first light-emitting element in a first direction; a second lead wire provided in the second layer and extending from the second light-emitting element in a second direction different from the first direction toward the opening A semiconductor structure having.

16. Forming a first insulating layer on a substrate, forming a light-emitting element using intermolecular forces on the first insulating layer, forming a first insulating layer opening penetrating the first insulating layer in the first insulating layer, and covering the first insulating layer and the light-emitting element Forming a second insulating layer, forming a second insulating layer opening communicating with the first insulating layer opening in the second insulating layer, covering the first insulating layer opening and the second insulating layer opening with a conductive material, and flattening the surface of the second insulating layer A thin film layer forming step of forming a first thin film layer and a second thin film layer; On the surface of the second insulating layer of the first thin film layer formed in the thin film layer forming step, the second thin film layer formed in the thin film layer forming step is arranged so that the light-emitting element formed in the first thin film layer and the second thin film layer overlap, and the conductive material of the second thin film layer and the conductive material of the first thin film layer are joined using intermolecular forces. A bonding step A method for manufacturing a thin film layer including.

17. The step of forming the light-emitting element A step of bonding a semiconductor thin film having a light-emitting layer on the first insulating layer with intermolecular forces; etching the semiconductor thin film to pattern the light-emitting element The method for manufacturing a thin film layer according to claim 16, comprising:

18. The step of forming the light-emitting element A step of bonding the patterned light-emitting element on the first insulating layer with intermolecular forces The method for manufacturing a thin film layer according to claim 16, comprising:

19. Bonding the control substrate according to claim 1 and the first layer with intermolecular forces; Bonding the first layer and the second layer according to claim 1 with intermolecular forces A method for manufacturing a light-emitting device having.

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