Evaporation mask for OLED pixel evaporation

Abstract

An evaporation mask according to an embodiment includes a metal plate containing an iron-nickel alloy and having a first surface and a second surface opposite to the first surface, the metal plate includes through holes including small-surface holes on the first surface of the metal plate and large-surface holes on the second surface, the compressive stress of the first surface is greater than the compressive stress of the second surface, the tensile stress of the second surface is greater than the tensile stress of the first surface, the metal plate warps toward the second surface, and the height difference between the highest point and the lowest point of the first surface is 3 μm or less.

Description

Technical Field

[0001] The embodiments relate to a deposition mask for OLED pixel deposition.

Background Art

[0002] Display devices are applied and used in various devices. For example, display devices are applied and used not only in small devices such as smartphones and tablet PCs, but also in large devices such as TVs, monitors, and public displays PD (Public Display). In particular, recently, the demand for ultra-high definition UHD (Ultra High Definition) with a resolution of 500 PPI (Pixel Per Inch) or more has been increasing, and high-resolution display devices are applied to small devices and large devices. As a result, the interest in technologies for realizing low power and high resolution is increasing.

[0003] Generally used display devices can be largely classified into LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode) according to the driving method.

[0004] An LCD is a display device driven using liquid crystal, and has a structure in which a light source including a CCFL (Cold Cathode Fluorescent Lamp) or an LED (Light Emitting Diode) is disposed below the liquid crystal, and the amount of light emitted from the light source is adjusted using the liquid crystal disposed on the light source and is driven.

[0005] In addition, an OLED is a display device driven using an organic substance, does not require another light source, and the organic substance itself can serve as a light source and be driven with low power. In addition, an OLED can express an infinite contrast ratio, has a response speed about 1000 times faster than that of an LCD, and is attracting attention as a display device that can replace an LCD with excellent viewing angles.

[0006] In particular, the organic matter contained in the light-emitting layer in the OLED can be deposited on the substrate by a deposition mask called a fine metal mask (FMM), and the deposited organic matter is formed in a pattern corresponding to the pattern formed on the deposition mask, and can serve as a pixel. The deposition mask is generally made of an Invar alloy metal plate containing iron (Fe) and nickel (Ni). At this time, through holes penetrating the one surface and the other surface are formed on one surface and the other surface of the metal plate, and the through holes can be formed at positions corresponding to the pixel pattern. As a result, organic matters such as red (Red), green (Green), and blue (Blue) can pass through the through holes of the metal plate and be deposited on the substrate, and a pixel pattern can be formed on the substrate.

[0007] On the other hand, the Invar alloy metal plate used for the deposition mask can have through holes formed in the metal plate after undergoing a rolling process to modify the thickness and surface of the metal plate.

[0008] At this time, when performing a rolling process on the metal plate, surface waviness may be formed on the surface of the metal plate as the stress distribution inside the metal plate changes randomly and warps. As a result, the length in the minor axis direction of the metal plate changes from region to region, and the length in the major axis direction also changes, which may reduce the straightness of the metal plate.

[0009] Therefore, when depositing a deposition object using a deposition mask with waviness generated, there are problems that the through holes deviate from the desired positions, or the thickness of the organic substance is thinly deposited in the deposition region of the deposition object and acts as a stain.

[0010] Therefore, there is a need for a new deposition mask that can control the warping of the metal plate and the resulting surface waveform due to the rolling process of the metal plate. Summary of the Invention Problems to be Solved by the Invention

[0011] An embodiment aims to provide an evaporation mask that can control warping and has improved evaporation efficiency.

Means for Solving the Problems

[0012] The evaporation mask according to the embodiment includes a metal plate containing an iron-nickel alloy and including a first surface and a second surface opposite to the first surface. The metal plate includes a through hole including small holes on the first surface of the metal plate and large holes on the second surface. The compressive stress on the first surface is greater than the compressive stress on the second surface, and the tensile stress on the second surface is greater than the tensile stress on the first surface. The metal plate warps in the direction of the second surface, and the height difference between the highest point and the lowest point of the first surface is 3 μm or less.

Effect of the Invention

[0013] The evaporation mask according to the embodiment can control the residual stress inside the evaporation mask. Specifically, the evaporation mask according to the embodiment can control the distribution and magnitude of the compressive stress and tensile stress remaining inside the evaporation mask.

[0014] Thereby, the evaporation mask according to the embodiment can control the warping of the evaporation mask. That is, the evaporation mask according to the embodiment can control the warping direction, warping position, and degree of warping of the evaporation mask.

[0015] Thereby, the evaporation region of the evaporation mask can be kept flat so that the curvature is close to zero, and the non-evaporation region can be kept warped so that the curvature is greater than that of the evaporation region.

[0016] Therefore, when the evaporation mask is brought into contact with the evaporation substrate, it is possible to minimize the lifting of the evaporation region of the evaporation mask and the evaporation substrate.

[0017] As a result, the evaporation mask according to the embodiment can minimize the gap between the evaporation mask and the evaporation substrate, thereby minimizing the non-uniformity of the evaporation thickness and improving the evaporation efficiency.

Brief Description of the Drawings

[0018]

Figure 1

Figure 2

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Figure 8

Modes for Carrying Out the Invention

[0019] Hereinafter, with reference to the attached drawings, preferred embodiments of the present invention will be described in detail. However, the technical idea of the present invention is not limited to some of the described embodiments, but can be realized in various different forms, and within the scope of the technical idea of the present invention, one or more of the components between the embodiments can be selectively combined and replaced for use. Also, the terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted as the meanings generally understood by those with ordinary knowledge in the technical field to which the present invention belongs, unless specifically defined and described otherwise, and terms generally used like pre-defined terms can be interpreted in consideration of their meanings in the context of the related technology.

[0020] Also, the terms used in the embodiments of the present invention are for the purpose of explaining the embodiments and do not limit the present invention. In this specification, the singular form can include the plural form unless otherwise specifically mentioned in a phrase, and when described as "at least one (or one or more) of A, B, and C", it can include one or more of all combinations that can be combined with A, B, and C.

[0021] Also, when describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. can be used. Such terms are merely for distinguishing the components from other components and are not limited to the essence, order, or sequence of the components by such terms.

[0022] And when a component is described as being "connected", "coupled", or "joined" to another component, that component can include not only the case where it is directly connected, coupled, or joined to the other component, but also the case where it is "connected", "coupled", or "joined" by another component between that component and the other component.

[0023] Also, when it is described that something is formed or disposed "above or below" each component, "above or below" includes not only the case where two components are in direct contact with each other, but also the case where one or more other components are formed or disposed between the two components.

[0024] Also, when expressed as "above or below", it can include not only the upward direction but also the downward direction with respect to one component.

[0025] Hereinafter, with reference to the drawings, a mask for vapor deposition according to an embodiment will be described.

[0026] FIG. 1 is a diagram showing an organic vapor deposition apparatus to which a vapor deposition mask 100 according to an embodiment is applied.

[0027] Referring to FIG. 1, the organic vapor deposition apparatus 1000 may include a vapor deposition mask 1100, a mask frame 1200, a vapor deposition substrate 1300, an organic vapor deposition container 1400, and a vacuum chamber 1500.

[0028] The vapor deposition mask 1100, the mask frame 1200, the vapor deposition substrate 1300, and the organic vapor deposition container 1400 may be accommodated in the vacuum chamber 1500. Thereby, the vapor deposition process through the vapor deposition mask 1100 may be performed in a vacuum atmosphere.

[0029] The vapor deposition substrate 1300 may be a substrate used in the manufacture of a display device. For example, the vapor deposition substrate 1300 may be a substrate for vapor depositing an organic substance for an OLED pixel pattern. On the vapor deposition substrate 1300, organic substance patterns of red, green, and blue, which are the three primary colors of light, may be formed to form pixels. That is, an RGB pattern may be formed on the vapor deposition substrate 1300.

[0030] The vapor deposition mask 1100 can be disposed on one surface of the vapor deposition substrate 1300. Specifically, the vapor deposition mask 1100 is disposed on the vapor deposition surface where the organic substance is vapor deposited among the two surfaces of the vapor deposition substrate 1300, and can be fixed by the mask frame 1200.

[0031] Thereby, the organic substance can pass through the through holes TH formed in the vapor deposition mask 1100, and the organic substance for forming the RGB pattern can be vapor deposited on the vapor deposition surface of the vapor deposition substrate 1300.

[0032] The organic substance vapor deposition container 1400 can be a crucible. An organic substance can be disposed inside the crucible. By supplying a heat source and / or current to the crucible which is the organic substance vapor deposition container 1400 in the vacuum chamber 1500, the organic substance can be vapor deposited on the vapor deposition surface of the vapor deposition substrate 1300 through the vapor deposition mask 1100.

[0033] FIG. 2 and FIG. 3 are diagrams for explaining the arrangement relationship between the vapor deposition mask 1100 and the vapor deposition substrate 1300.

[0034] Referring to FIG. 2, the vapor deposition mask 1100 is disposed on the vapor deposition surface of the vapor deposition substrate 1300, and the vapor deposition mask 1100 can be disposed in contact with the vapor deposition surface of the vapor deposition substrate 1300.

[0035] The vapor deposition mask 1100 can be formed by forming a plurality of through holes TH in a metal plate 100 containing iron and nickel. Specifically, the vapor deposition mask 1100 can be formed by forming a plurality of through holes TH formed through an etching process in a metal plate 100 containing an Invar alloy containing iron and nickel.

[0036] Specifically, the metal plate 100 can include a first surface 101 and a second surface 102 which are opposite to each other. Small holes V1 are formed in the first surface 101 of the metal plate 100, and large holes V2 can be formed in the second surface 102 of the metal plate 100.

[0037] The large aperture V2 is disposed opposite to the organic vapor deposition container 1400, and thus is a region into which the vapor deposition material of the organic vapor deposition container 1400 flows. The small aperture V1 may be a region through which the vapor deposition material flowing in from the large aperture V2 passes.

[0038] The small aperture V1 and the large aperture V2 may be formed by partially penetrating the metal plate 100. For example, the depth of the small aperture V1 may be smaller than the depth of the large aperture V2. Also, the small aperture V1 and the large aperture V2 may be disposed at positions overlapping each other in the thickness direction of the metal plate 100 and may be formed to communicate with each other.

[0039] As a result, a plurality of through holes TH formed by the communication of the small aperture V1 and the large aperture V2 may be formed in the metal plate 100.

[0040] The vapor deposition mask 1100 may be disposed such that the small aperture V1 of the vapor deposition mask 1100 contacts the vapor deposition surface of the vapor deposition substrate 1300.

[0041] Before forming the through holes TH, a pretreatment process may be performed on the metal plate 100 for reducing the thickness of the metal plate 100 and surface treatment. As a result, the stress remaining inside the metal plate due to the pretreatment process, that is, the distribution of tensile stress and compressive stress, randomly changes, and due to such a stress distribution, the metal plate warps, and surface waveforms formed by the pretreatment process may be formed on the surface of the metal plate.

[0042] Conventionally, through a rolling process of inserting the metal plate 100 between two rollers, the thickness of the metal plate was reduced to a constant thickness, and the surface roughness of the first surface and the second surface of the metal plate was changed. However, since such a rolling process is performed in one direction, the stress distribution inside the metal plate irregularly changes due to the pressure applied in the directions of the first surface and the second surface of the metal plate, and due to such an irregular residual stress distribution, the metal plate warps in an irregular direction, and surface waveforms are formed on the surface of the metal plate.

[0043] Due to such surface waveforms, the sizes of the length and width of the metal plate can change. For example, referring to FIG. 3, the sizes of the short width W1 or the long width W2 of the metal plate can randomly change for each region of the metal plate due to the surface waveforms. That is, the size in the width direction of the metal plate and the size in the longitudinal direction of the metal plate can randomly change for each region of the metal plate due to the surface waveforms. That is, the sizes of the short width W1 defined as the size in the width direction of the metal plate and the long width W2 defined as the size in the longitudinal direction of the metal plate can randomly change for each region of the metal plate.

[0044] As a result, when the vapor deposition mask 1100 and the vapor deposition substrate 1300 are brought into contact with each other due to the surface waveform (waviness) formed on the vapor deposition mask 1100, as shown in FIG. 2, the contact surface between the vapor deposition mask 1100 and the vapor deposition substrate 1300 does not completely contact, and gaps g that do not contact each other are formed in some regions due to the surface waveform (waviness) and can come into contact. The distribution and size of such gaps g may become larger as the surface waveform becomes larger.

[0045] As a result, the first through hole TH formed in the vapor deposition mask 1100 may be misaligned with the vapor deposition region to be vapor deposited on the vapor deposition substrate 1300, and thus the vapor deposition efficiency after the vapor deposition process may decrease. In addition, since the thickness of the organic substance passing through the vapor deposition region of the metal plate is different for each region, there is a problem that the thickness of the organic pattern vapor deposited on the vapor deposition substrate becomes non-uniform.

[0046] Therefore, hereinafter, a vapor deposition mask that can solve the above problems will be described.

[0047] FIGS. 4 and 5 are diagrams for explaining the pretreatment of the metal plate of the vapor deposition mask according to the embodiment and the stress distribution inside the metal plate after the pretreatment.

[0048] Referring to FIG. 4, the metal plate 100 may be pre-treated before forming the through hole TH. Such pre-treatment may be a process of reducing the thickness of the metal plate and increasing the surface roughness of the metal plate in order to manufacture a mask for vapor deposition.

[0049] The mask for vapor deposition according to the embodiment can reduce the thickness of the metal plate 100 to a thickness applicable to the mask for vapor deposition by etching the first surface 101 or the second surface 102 of the metal plate 100.

[0050] For example, the mask for vapor deposition can etch the second surface 102 of the metal plate to form the metal plate 100 with a thickness of 30 μm or less. Thereby, the first surface 101 of the metal plate 100 may maintain the Invar alloy surface that is the raw material of the metal plate as it is, and the second surface 102 may become an etched surface by etching.

[0051] Referring to FIG. 4, it can be seen that the stress distribution of the metal plate 100 of the mask for vapor deposition according to the embodiment is maintained uniformly even after the pre-treatment process.

[0052] FIG. 4(a) is a cross-sectional view showing the internal stress distribution of the metal plate before the pre-treatment process of the metal plate, and FIG. 4(b) is a cross-sectional view showing the internal stress distribution of the metal plate after the pre-treatment process of the metal plate.

[0053] Referring to FIG. 4(a), before pre-treating the metal plate 100, the inside of the metal plate 100 has compressive stress CS and tensile stress TS that are symmetric with each other in the directions of the first surface 101 and the second surface 102 of the metal plate. Therefore, the metal plate 100 can be maintained in a flat state without warping.

[0054] That is, since the compressive stress CS and the tensile stress TS remaining inside the metal plate 100 remain in amounts that are symmetric with each other inside the metal plate 100 in the directions of the first surface and the second surface, the metal plate 100 can maintain a flat state without warping in one direction or generating another surface waveform due to the compressive stress CS and the tensile stress TS.

[0055] Next, referring to FIG. 4(b), a step of pre-treating the metal plate 100 may be performed. Specifically, a step of etching the first surface 101 or the second surface 102 of the metal plate 100 may be performed.

[0056] For example, the metal plate 100 can be etched from the second surface 102 toward the first surface 101 to reduce the thickness of the metal plate 100. Specifically, by etching and removing 10% to 50% of the total thickness of the metal plate 100, the metal plate 100 applied to the evaporation mask can be manufactured.

[0057] When etching to a thickness of less than 10% of the total thickness of the metal plate 100 or etching to a thickness of more than 50% of the total thickness of the metal plate 100, the stress difference remaining in the directions of the first surface and the second surface of the metal plate after etching is not large, so the metal plate cannot be warped in a desired direction.

[0058] When the metal plate 100 is etched from the second surface 102 toward the first surface 101, the compressive stress CS and the tensile stress TS remaining in the direction from the second surface 102 to the first surface 101 can be removed.

[0059] However, since no other force acts in the direction from the first surface 101 to the second surface 102, the compressive stress CS and the tensile stress TS remaining in the direction from the first surface 101 to the second surface 102 can be maintained as they are in the distribution of the tensile stress and the compressive stress before the metal plate 100 is pre-treated.

[0060] Thereby, after the metal plate 100 is pre-treated, the stress distribution of the metal plate can change compared with before the metal plate 100 is pre-treated. Specifically, after the metal plate 100 is pre-treated, the compressive stress on the first surface 101 of the metal plate may be greater than the compressive stress on the second surface, and the tensile stress on the second surface 102 may be greater than the tensile stress on the first surface.

[0061] Also, after the pretreatment of the metal plate 100, the compressive stress in the central region CA of the metal plate may be greater than the compressive stress in the outer region OA of the metal plate, and the tensile stress in the outer region OA may be greater than the tensile stress in the central region CA.

[0062] As a result, the metal plate 100 may have the property of being compressed in the direction from the first surface 101 to the second surface 102, and may have the property of being pulled from the central region to the outer region of the metal plate.

[0063] As a result, referring to FIG. 5, the metal plate 100 may warp in the direction of the second surface 102 according to the distribution of the compressive stress and the tensile stress on the first surface 101, the second surface 102, the central region CA, and the outer region OA. Specifically, both ends of the metal plate 100 may warp in the direction of the second surface 102. That is, the metal plate 100 may warp such that the curvature gradually increases from the central region to the outer region. Specifically, the central region CA of the metal plate 100 may be flat, and the outer region OA may change to a warped shape.

[0064] As a result, the central region where the deposition region is arranged by the deposition mask 1100 is maintained flat so that the curvature is close to 0, and the outer region where the deposition region is not arranged is maintained warped. When the deposition mask 1100 and the deposition substrate 1300 are brought into contact, the gap due to the surface waveform in the deposition region can be minimized.

[0065] On the other hand, when the metal plate 100 warps in one direction, the first surface 101 of the metal plate can have a highest point HP and a lowest point LP. That is, the first surface 101 of the metal plate can have the highest point HP in the central region CA of the metal plate 100 and the lowest point LP in the outer region OA.

[0066] At this time, the height difference h between the highest point HP and the lowest point LP can be about 3 μm or less. When the height difference h between the highest point HP and the lowest point LP exceeds 3 μm, the curvature becomes large in the central region of the first surface 101 of the metal plate. As a result, when the vapor deposition mask 1100 and the vapor deposition substrate 1300 are brought into contact, the gap region where the vapor deposition region of the metal plate arranged in the central region of the metal plate does not contact the vapor deposition substrate 1300 increases, and the vapor deposition efficiency may decrease.

[0067] On the other hand, the surface roughness of the first surface 101 and the second surface 102 of the metal plate 100 may be different.

[0068] Specifically, the surface on which etching is performed among the surfaces of the metal plate 100 may have a smaller surface roughness than the surface on which etching is not performed. Thereby, as described above, when etching the second surface 102 of the metal plate 100, the surface roughness of the first surface 101 may be larger than the surface roughness of the second surface 102.

[0069] Specifically, the arithmetic mean roughness (Ra) of the first surface 101 may be larger than the arithmetic mean roughness (Ra) of the second surface 102. Also, the ten-point mean roughness (Rz) of the first surface 101 may be larger than the ten-point mean roughness (Rz) of the second surface 102.

[0070] For example, the arithmetic mean roughness (Ra) in the longitudinal direction of the metal plate of the first surface may be 0.05 μm to 0.5 μm, and the arithmetic mean roughness (Ra) in the width direction may be 0.05 μm to 0.5 μm. Also, the arithmetic mean roughness (Ra) in the longitudinal direction of the metal plate of the second surface may be 0.05 μm to 0.2 μm, and the arithmetic mean roughness (Ra) in the width direction may be 0.1 μm to 0.5 μm.

[0071] That is, as shown in FIG. 6. The roughness in the longitudinal direction and the width direction of the first surface of the metal plate may be substantially similar. Thereby, the first surface is not formed with a fine texture on the surface.

[0072] In addition, the ten-point average roughness (Rz) in the longitudinal direction of the metal plate on the first surface may be 1.0 μm to 3.0 μm, and the ten-point average roughness (Rz) in the width direction may be 1.0 μm to 3.0 μm. Also, the ten-point average roughness (Rz) in the longitudinal direction of the metal plate on the second surface is 0.2 μm to 1.0 μm, and the Average roughness depth over ten points (Rz) in the width direction may be 1.0 μm to 3.0 μm.

[0073] That is, as shown in FIG. 7, the roughness in the longitudinal direction and the roughness in the width direction of the second surface may be different. As a result, the second surface may have a texture formed on its surface.

[0074] That is, the difference between the arithmetic mean roughness (Ra) in the longitudinal direction and the arithmetic mean roughness (Ra) in the width direction on the first surface may be smaller than the difference between the arithmetic mean roughness (Ra) in the longitudinal direction and the arithmetic mean roughness (Ra) in the width direction on the second surface.

[0075] In addition, the difference between the ten-point average roughness (Rz) in the longitudinal direction and the ten-point average roughness (Rz) in the width direction on the first surface may be smaller than the difference between the ten-point average roughness (Rz) in the longitudinal direction and the ten-point average roughness Rz in the width direction on the second surface.

[0076] As a result, the first surface and the second surface may have different surface shapes due to the surface texture.

[0077] As a result, the surface roughness of the first surface 101 on which the small holes V1 are formed of the vapor deposition mask 1100 may be even greater than the surface roughness of the second surface 102 on which the large holes V2 are formed.

[0078] For example, the arithmetic mean roughness (Ra) of the first surface 101 may be 1.2 times to 1.65 times that of the arithmetic mean roughness (Ra) of the second surface 102. Also, the ten-point average roughness (Rz) of the first surface 101 may be 1.2 times to 1.65 times that of the ten-point average roughness (Rz) of the second surface 102.

[0079] When the arithmetic mean roughness (Ra) or the ten-point height of irregularities (Rz) of the first surface 101 exceeds 1.65 times that of the arithmetic mean roughness (Ra) or the ten-point height of irregularities (Rz) of the second surface 102, the difference in the surface roughness between the first surface 101 and the second surface 102 may increase the difference in the adhesion of the photoresist between the first surface 101 and the second surface 102, and the etching uniformity between the first surface 101 and the second surface 102 may decrease.

[0080] Hereinafter, with reference to FIG. 8, a vapor deposition mask to which the above-described pretreated metal plate is applied will be described.

[0081] FIG. 8 is a diagram showing a plan view of a vapor deposition mask according to an embodiment.

[0082] Referring to FIG. 8, the vapor deposition mask 1100 according to the embodiment may include a vapor deposition region DA and a non-vapor deposition region NDA.

[0083] The vapor deposition region DA may be a region for forming a vapor deposition pattern. That is, a vapor deposition material may be vapor-deposited on a vapor deposition substrate through the vapor deposition mask via the vapor deposition region DA.

[0084] The vapor deposition mask 1100 may include a plurality of vapor deposition regions DA. For example, the vapor deposition region DA may include an effective portion and a non-effective portion. Specifically, the vapor deposition region DA may include a plurality of effective portions in which a plurality of through holes are formed to form a vapor deposition pattern and a non-effective portion UA in which no through holes are formed. A plurality of the above-described through holes TH may be formed in the effective portion.

[0085] The plurality of effective portions may include a first effective portion AA1, a second effective portion AA2, and a third effective portion AA3, and may be separated from each other by separation regions IA1 and IA2.

[0086] In the case of a small display device such as a smartphone, any one of the plurality of vapor deposition regions included in the vapor deposition mask 1100 may be for forming one display device. Alternatively, in the case of a large display device such as a television, a plurality of effective portions included in one vapor deposition mask 1100 may be a part for forming one display device. Accordingly, one said vapor deposition mask 1100 can include a plurality of effective portions and can form a plurality of display devices simultaneously. Therefore, the vapor deposition mask 1100 according to the embodiment can improve the process efficiency.

[0087] The non-vapor deposition region NDA may be disposed on both side portions in the longitudinal direction of the vapor deposition region DA. That is, the non-vapor deposition region NDA may be disposed outside the longitudinal direction of the vapor deposition region DA.

[0088] The non-vapor deposition region NDA may be a region not involved in vapor deposition. The non-vapor deposition region NDA may include frame fixing regions FA1 and FA2 for fixing the vapor deposition mask 1100 to the mask frame 1200. Further, the non-vapor deposition region NDA may include half-etching portions HF1 and HF2, open portions OA1 and OA2, and protruding portions PA1 and PA2.

[0089] The vapor deposition region DA and the non-vapor deposition region NDA may respectively correspond to the positions of the central region CA and the outer region OA of the metal plate 100 described above. Specifically, the vapor deposition region DA may correspond to the central region CA of the metal plate 100. Further, the non-vapor deposition region NDA may correspond to the outer region OA of the metal plate 100.

[0090] Accordingly, in the vapor deposition mask 1100, the vapor deposition region DA may be flat and the non-vapor deposition region NDA may be warped. Specifically, both ends of the vapor deposition mask 1100 may be warped. Specifically, both ends of the vapor deposition mask 1100 may be warped in the direction of the large hole. That is, the vapor deposition mask 1100 may be warped in the direction of the large hole such that the curvature gradually increases while extending from the vapor deposition region DA to the non-vapor deposition region NDA.

[0091] As a result, the deposition region DA of the deposition mask 1100 is maintained flat so that the curvature is close to 0, and the non-deposition region NDA maintains the shape of the deposition mask so as to warp. When the deposition mask 1100 and the deposition substrate 1300 are brought into contact with each other, the phenomenon that the deposition region and the deposition substrate 1300 float up can be minimized.

[0092] The deposition mask according to the embodiment can control the residual stress inside the deposition mask. Specifically, the deposition mask according to the embodiment can control the distribution and magnitude of the compressive stress and tensile stress remaining inside the deposition mask.

[0093] As a result, the deposition mask according to the embodiment can control the warping of the deposition mask. That is, the deposition mask according to the embodiment can control the warping direction, warping position, and degree of warping of the deposition mask.

[0094] As a result, the deposition region of the deposition mask can be maintained flat so that the curvature is close to zero, and the non-deposition region can be maintained warped so that the curvature is larger than that of the deposition region.

[0095] Therefore, when the deposition mask and the deposition substrate are brought into contact with each other, the phenomenon that the deposition region of the deposition mask and the deposition substrate float up can be minimized.

[0096] As a result, the deposition mask according to the embodiment can minimize the gap between the deposition mask and the deposition substrate, thereby minimizing the non-uniformity of the deposition thickness due to this and improving the deposition efficiency.

[0097] In addition, after forming the deposition mask, another tensioning process for reducing the surface waveform of the deposition mask can be omitted.

[0098] The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified and implemented in other embodiments by those with ordinary knowledge in the field to which the embodiment belongs. Therefore, the content related to such combinations and modifications should be construed as being included in the scope of the present invention.

[0099] Also, although the above has been described mainly with reference to the embodiments, this is merely an illustration and does not limit the present invention. Those with ordinary knowledge in the field to which the present invention belongs will understand that various modifications and applications not exemplified above are possible without departing from the essential characteristics of this embodiment. For example, each component specifically shown in the embodiment can be implemented with modifications. And the differences related to such modifications and applications should be construed as being included in the scope of the present invention defined by the appended claims.

Claims

1. A metal plate including an iron-nickel alloy and having a first surface and a second surface opposite to the first surface, wherein the metal plate, includes a through hole including small holes on the first surface of the metal plate and large holes on the second surface, the compressive stress of the first surface is greater than the compressive stress of the second surface, the tensile stress of the second surface is greater than the tensile stress of the first surface, the end of the metal plate warps in the direction of the second surface, the height difference between the highest point and the lowest point of the first surface is 3 μm or less, the 10-point average roughness (Rz) in the longitudinal direction of the metal plate on the first surface in contact with a predetermined vapor deposition substrate is 1.0 μm to 3.0 μm, and the 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm, the 10-point average roughness (Rz) in the longitudinal direction of the metal plate on the second surface into which a predetermined vapor deposition source is injected is 0.2 μm to 1.0 μm, and the 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm, the difference between the 10-point average roughness in the longitudinal direction and the 10-point average roughness in the width direction on the first surface in contact with the vapor deposition substrate is smaller than the difference between the 10-point average roughness in the longitudinal direction and the 10-point average roughness in the width direction on the second surface into which the vapor deposition source is injected, no texture is formed on the surface of the first surface in contact with the vapor deposition substrate, a mask for vapor deposition, wherein a texture is formed on the surface of the second surface into which the vapor deposition source is injected.

2. The compressive stress in the central region of the metal plate is greater than the compressive stress in the outer peripheral region of the metal plate, The mask for vapor deposition according to claim 1, wherein the tensile stress in the outer peripheral region is greater than the tensile stress in the central region.

3. The mask for vapor deposition according to claim 2, wherein the central region is flat and the outer peripheral region warps.

4. The mask for vapor deposition according to claim 2 or 3, wherein the through hole is disposed in the central region.

5. The highest point of the first surface is located in the central region, The mask for vapor deposition according to any one of claims 2 to 4, wherein the lowest point of the first surface is located in the outer peripheral region.

6. The mask for vapor deposition according to claim 1, wherein the arithmetic average roughness of the first surface and the arithmetic average roughness of the second surface are different.

7. The mask for vapor deposition according to claim 6, wherein the arithmetic average roughness of the first surface is greater than the arithmetic average roughness of the second surface.

8. The mask for vapor deposition according to claim 1, wherein the 10-point average roughness of the first surface and the 10-point average roughness of the second surface are different.

9. The 10-point average roughness of the first surface is greater than the 10-point average roughness of the second surface. The mask for vapor deposition according to claim 8.

10. The metal plate extends from the central region to the outer region of the metal plate, and the curvature increases. The mask for vapor deposition according to claim 1.

11. The metal plate includes a vapor deposition region and a non-vapor deposition region disposed outside the vapor deposition region. The small holes and the large holes are disposed in the vapor deposition region. The vapor deposition region extends to the non-vapor deposition region, and the curvature increases. The mask for vapor deposition according to claim 1.

12. The difference between the arithmetic average roughness in the longitudinal direction and the arithmetic average roughness in the width direction on the first surface is smaller than the difference between the arithmetic average roughness in the longitudinal direction and the arithmetic average roughness in the width direction on the second surface. The mask for vapor deposition according to claim 1.

13. The arithmetic average roughness (Ra) of the metal plate on the first surface in the longitudinal direction is 0.05 μm to 0.5 μm, and the arithmetic average roughness (Ra) in the width direction is 0.05 μm to 0.5 μm. The arithmetic average roughness (Ra) of the metal plate on the second surface in the longitudinal direction is 0.05 μm to 0.2 μm, and the arithmetic average roughness (Ra) in the width direction is 0.1 μm to 0.5 μm. The mask for vapor deposition according to claim 1.

14. The large holes are regions where the vapor deposition material flows in, and the small holes are regions where the vapor deposition material flowing in from the large holes passes through. The mask for vapor deposition according to claim 1.

15. The thickness of the metal plate is 30 μm or less. The mask for vapor deposition according to claim 1.

16. Including an iron-nickel alloy. A metal plate for a mask for vapor deposition, including a first surface and a second surface opposite to the first surface. The compressive stress on the first surface is greater than the compressive stress on the second surface. The tensile stress on the second surface is greater than the tensile stress on the first surface. The end of the metal plate for the mask for vapor deposition warps in the direction of the second surface. The height difference between the highest point and the lowest point on the first surface is 3 μm or less. The 10-point average roughness (Rz) of the metal plate on the first surface in the longitudinal direction in contact with a predetermined vapor deposition substrate is 1.0 μm to 3.0 μm, and the 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm. The 10-point average roughness (Rz) of the metal plate on the second surface in the longitudinal direction into which a predetermined vapor deposition source is injected is 0.2 μm to 1.0 μm, and the 10-point average roughness (Rz) in the width direction is 1.0 μm to 3.0 μm. The difference between the 10-point average roughness in the longitudinal direction and the 10-point average roughness in the width direction on the first surface in contact with the vapor deposition substrate is smaller than the difference between the 10-point average roughness in the longitudinal direction and the 10-point average roughness in the width direction on the second surface into which the vapor deposition source is injected. No texture is formed on the surface of the first surface in contact with the vapor deposition substrate. A metal plate for a vapor deposition mask, on the surface of the second surface into which the vapor deposition source is injected, a texture is formed.

17. The metal plate for a vapor deposition mask includes a central region and an outer peripheral region. The central region is defined as the position where the through hole is formed. The compressive stress in the central region is greater than the compressive stress in the outer peripheral region. The tensile stress in the outer peripheral region is greater than the tensile stress in the central region. The metal plate for a vapor deposition mask according to claim 16.

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