Light-emitting element, display device, and method for manufacturing light-emitting element

Abstract

A light emitting element (1) is provided with: a light emitting layer (13) which is positioned between a first electrode (11) and a second electrode (15), has quantum dots (2), and contains fluorine; a first functional layer (12) which is positioned between the first electrode and the light emitting layer; a second functional layer (14) which is positioned between the second electrode and the light emitting layer; and a fluorine-containing film (3) which is positioned between the first functional layer (12) and the second functional layer (14).

Description

Technical Field

[0001] The present disclosure relates to a light-emitting element and the like.

Background Art

[0002] Patent Document 1 discloses a quantum dot composition including a quantum dot whose surface is modified with a ligand containing fluorine and a fluororesin.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] A light-emitting element using a conventional quantum dot composition has a problem of low luminous efficiency.

Means for Solving the Problems

[0005] A light-emitting element according to one aspect of the present disclosure includes a first electrode and a second electrode, a light-emitting layer located between the first electrode and the second electrode and having quantum dots and containing fluorine, a first functional layer located between the first electrode and the light-emitting layer, a second functional layer located between the second electrode and the light-emitting layer, and a fluorine-containing film located between the first functional layer and the second functional layer.

[0006] A method for manufacturing a light-emitting element according to one aspect of the present disclosure includes a step of forming a first functional layer, a step of forming a fluorine-containing film on the first functional layer, and a step of applying a solution containing a fluorine-containing compound and quantum dots on the fluorine-containing film.

Effects of the Invention

[0007] According to one aspect of the present disclosure, the luminous efficiency of a light-emitting element can be increased.

Brief Description of the Drawings

[0008]

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Modes for Carrying Out the Invention

[0009] 〔Embodiment 1〕 FIG. 1 is a schematic diagram showing the configuration of a light-emitting element according to Embodiment 1. FIG. 2 is a cross-sectional view showing a configuration example of a light-emitting element. As shown in FIGS. 1 and 2, the light-emitting element 1 includes a first electrode 11 and a second electrode 15, a light-emitting layer 13 that is located between the first electrode 11 and the second electrode 15 and has quantum dots (Quantum dot) 2 and contains fluorine (F), a first functional layer 12 that is located between the first electrode 11 and the light-emitting layer 13, a second functional layer 14 that is located between the second electrode 15 and the light-emitting layer 13, and a fluorine-containing film 3 that is located between the first functional layer 12 and the second functional layer 14.

[0010] Layers other than the light-emitting layer 13 located between the first electrode 11 and the second electrode 15 are collectively referred to as functional layers. The functional layer may have carrier (electron or hole) transport properties, and the functional layer may be a HIL (hole injection layer), HTL (hole transport layer), ETL (electron transport layer), or EIL (electron injection layer). The first electrode 11 may be an anode, the first functional layer 12 may be a hole transport layer, the second functional layer 14 may be an electron transport layer, and the second electrode 15 may be a cathode. The first electrode 11 may be a cathode, the first functional layer 12 may be an electron transport layer, the second functional layer 14 may be a hole transport layer, and the second electrode 15 may be an anode. The light-emitting element 1 may be formed on the pixel circuit board 7. In this case, the first electrode 11 may be provided at a position closer to the pixel circuit board 7 than the second electrode 15.

[0011] The quantum dot 2 is a dot composed of nanoparticles with a maximum width of 100 [nm] or less. It may have the property (luminescence property) of generating electroluminescence by applying a voltage V between the first electrode 11 and the second electrode 15. The quantum dot 2 may be of a core-shell type or a shell-less type (core-exposed type).

[0012] Also, the shape of the quantum dot 2 may be within the range that satisfies the above maximum width, and is not particularly restricted, and is not limited to a spherical three-dimensional shape (circular cross-sectional shape). For example, it may have a polygonal cross-sectional shape, a rod-like three-dimensional shape, a branched three-dimensional shape, a three-dimensional shape with irregularities on the surface, or a combination thereof.

[0013] The quantum dot 2 may include at least one of crystals of II-VI group semiconductors such as MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, crystals of III-V group semiconductors such as GaAs, GaP, InN, InAs, InP, InSb, and crystals of IV group semiconductors such as Si, Ge.

[0014] The quantum dot 2 may have a structure (core-shell structure) in which a semiconductor crystal as described above is used as a core and the core is overcoated with a shell material having a wider band gap than the core. Further, it may have a ligand adsorbed (coordinated) on the surface of the quantum dot 2.

[0015] The fluorine-containing film 3 may be a liquid-repellent film containing a liquid-repellent component and may contain a polymer compound. The fluorine-containing film 3 may be a resist film containing a polymer compound and having liquid-repellent properties.

[0016] Of the two regions obtained by bisecting the region sandwiched between the first functional layer 12 and the second functional layer 14 in the thickness direction, the one located on the first functional layer 12 side is defined as the first region A1, and the one located on the second functional layer 14 side is defined as the second region A2. The fluorine-containing film 3 may be included in the first region A1. At least a part of the fluorine-containing film 3 may be located below the light-emitting layer 13 (between the first functional layer 12 and the quantum dot 2).

[0017] In the light-emitting element 1, since the light-emitting layer 13 contains fluorine, even if the fluorine-containing film 3 has liquid-repellent properties, unevenness in the arrangement of the quantum dots 2 on the fluorine-containing film 3 is reduced. Thereby, the carrier path can be increased and the variation in the light-emitting distribution can be suppressed.

[0018] By providing the liquid-repellent fluorine-containing film 3, a protective function of the first functional layer 12 during upper layer formation and a barrier function after element completion (a function in which the fluorine-containing film 3 prevents moisture intrusion from outside the element) can be obtained, and the reliability of the light-emitting element 1 can be improved.

[0019] The fluorine-containing film 3 may be insulating. In this case, the balance (carrier balance) of holes and electrons supplied to the light-emitting layer 13 can be improved, and the external quantum efficiency (EQE) can be increased.

[0020] The fluorine-containing film 3 may have a layer shape that contacts the first functional layer 12. By doing so, the protective function of the first functional layer 12 during the process and the barrier function after the device is completed can be further enhanced. The thickness of the fluorine-containing film 3 may be smaller than the thickness of the first functional layer 12. By doing so, while suppressing the thickness, the surface of the first functional layer 12 can be made to have an affinity with the light-emitting layer 13.

[0021] The light-emitting layer 13 may contain an organic compound 21 having a fluorine terminal (having a fluorine atom F at the terminal). The organic compound 21 may be an additive (for example, a ligand agent). The organic compound 21 may be coordinated to the quantum dot 2 as a ligand. By doing so, the quantum dot 2 becomes easier to disperse in the solution, and coating formation becomes easier. Note that, by the light-emitting layer 13 containing the organic compound 21, it can be regarded that the organic compound 21 functions as a ligand agent (the organic compound 21 is coordinated to the quantum dot 2).

[0022] In FIG. 2, the fluorine concentration in the first region A1 may be higher than that in the second region A2. That is, in the first region A1, since the fluorine-terminated organic compound 21 and the fluorine-containing film 3 are present, the fluorine concentration becomes high. On the other hand, in the second region A2, since only the organic compound 21 is present, the fluorine concentration is lower than that in the first region A1. Thus, by adopting a configuration in which the fluorine-terminated organic compound 21 gathers on the fluorine-containing film 3 in the first region A1, the wettability of the solution when the light-emitting layer 13 is formed by coating a solution (a quantum dot solution containing the quantum dot 2 and the organic compound 21) is improved.

[0023] FIG. 3 is a cross-sectional view showing a configuration example of a display device including a light-emitting element according to Embodiment 1. The display device 30 has a plurality of light-emitting elements 1 (1R·1G·1B) that emit light of different colors on a pixel circuit board 7. The light-emitting element 1 (1R) may include a light-emitting layer 13 (13R) that emits red light, the light-emitting element 1 (1G) may include a light-emitting layer 13 (13G) that emits green light, and the light-emitting element 1 (1B) may include a light-emitting layer 13 (13B) that emits blue light. The plurality of light-emitting elements 1 may have a common first functional layer 12 and a common second functional layer 14. The plurality of light-emitting elements 1 may have a common second electrode 15. A sealing layer 17 may be formed so as to cover the second electrode 15. The first electrode 11 may be provided at a position closer to the pixel circuit board 7 than the second electrode 15.

[0024] The light-emitting element 1 in the display device 30 may include an edge cover film 8 that contacts the end face of the first electrode 11, and the first functional layer 12 and the second functional layer 14 may extend above the edge cover film 8. The edge cover film 8 is formed over the plurality of light-emitting elements 1, and a region where the edge cover film 8 does not exist is defined as a pixel opening region K, and a non-edge portion of the first electrode 11 (for example, an anode) of each light-emitting element 1 may be exposed in the pixel opening region K. In the light-emitting layer 13, a portion located above the pixel opening region K emits light.

[0025] As shown in FIGS. 2 and 3, a region that is located above the pixel opening region K and is located between the first functional layer 12 and the quantum dots 2 is defined as a third region A3, and a region that is located above the edge cover film 8 and is sandwiched between the first functional layer 12 and the second functional layer 14 is defined as a fourth region A4. The third region A3 may have a higher fluorine concentration than the fourth region A4.

[0026] In this way, the portion of the first functional layer 12 that is located above the pixel opening region K (the portion below the third region A3) is effectively protected from the process to after the process (after the element is completed), and the wettability of the solution when the light-emitting layer 13 is formed by solution coating is improved.

[0027] The third region A3 can have a thickness D in the range of D = 0.5 nm to 20 nm in the stacking direction from the upper surface of the first functional layer 12 to the second electrode 15, for example, above the pixel aperture region K. The fourth region A4 can have a thickness D in the range of D = 0.5 nm to 20 nm in the stacking direction from the upper surface of the first functional layer 12 to the second electrode 15, for example, above the edge cover film 8.

[0028] The edge cover film 8 contains an insulating material (for example, polyimide resins, acrylic resins, novolak resins, fluorene resins, etc.). The edge cover film 8 can be formed, for example, by patterning a photosensitive resin material using photolithography technology. The photosensitive resin may be negative or positive.

[0029] The fluorine-containing film 3 may be a resist film containing a polymer compound having an alkyl group, and this polymer compound may contain two or more carbon atoms. The thickness of the fluorine-containing film 3 may be 0.5 to 20 [nm].

[0030] The fluorine-containing film 3 (resist film) may be formed so as to remain in one piece (in a continuous film form), or may be formed so that the resist components are scattered (in an island form). The fluorine-containing film 3 (resist film) is inserted between the light-emitting layer 13 and the first functional layer 12 for the purpose of improving the carrier balance, and may not contain quantum dots 2. The fluorine-containing film 3 (resist film) may be inserted (formed) between both the first functional layer 12 and the light-emitting layer 13 and between the light-emitting layer 13 and the second functional layer 14.

[0031] The light-emitting layer 13 may contain an organic compound 21 having a fluorine terminal (having a fluorine atom F at the terminal). The fluorine-terminal organic compound 21 may be represented by the following structural formula (1) or (2). In this case, the wettability and coatability with respect to the fluorine-containing film 3 (resist film) can be further improved.

[0032] (1)

[0033] [Chemical formula] (2)

[0034] [Chemical formula] The organic compound 21 preferably contains a chain compound. Thereby, the dispersibility of the quantum dot 2 coordinated with the organic compound 21 as a ligand in a nonpolar solvent is improved.

[0035] The organic compound 21 preferably has a plurality of coordination functional groups. The coordination functional group includes at least one of a thiol group, an amino group, a carboxyl group, and a phosphino group. Thereby, the dispersibility of the quantum dot 2 coordinated with the organic compound 21 in a polar solvent is improved.

[0036] The organic compound 21 preferably contains a polycyclic aromatic hydrocarbon having two or more benzene rings. Thereby, the dispersibility of the quantum dot 2 coordinated with the organic compound 21 (organic ligand agent) in an aromatic compound solvent is improved.

[0037] The organic compound 21 contained in the light-emitting device 1 can be specified by combining a plurality of analysis methods including MALDI-TOF-MS (Matrix Assisted Laser Desorption / Ionization - Time of Flight Mass Spectrometry), LC-MS / MS (Liquid Chromatograph - Mass Spectrometry), TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry), etc.

[0038] Matrix-assisted laser desorption ionization (MALDI) includes a method of irradiating a matrix mixture with a nitrogen laser beam (wavelength = 337 nm) and rapidly heating (several nanoseconds) the outermost surface to 100 nm to vaporize it.

[0039] Time-of-flight mass spectrometry (TOF-MS) includes a method of performing mass spectrometry by utilizing the fact that the flight time of ions varies depending on the mass-to-charge ratio m / z value.

[0040] Liquid chromatography mass spectrometer (LC-MS / MS) is a device that combines a high-performance liquid chromatograph (HPLC) and a triple quadrupole mass spectrometer (MS / MS). In LC-MS / MS, a more separated mass spectrum than LC-MS can be obtained by the connected MS section, so it is excellent for molecular identification.

[0041] Time-of-flight secondary ion mass spectrometry (TOF-SIMS): When a primary ion beam is irradiated onto a sample under ultra-high vacuum, secondary ions are emitted from the extreme surface (1 - 3 nm) of the sample. By introducing the secondary ions into a time-of-flight (TOF-type) mass spectrometer, the mass spectrum of the outermost surface of the sample can be obtained. At this time, by keeping the primary ion irradiation amount low, surface components can be detected as molecular ions that maintain their chemical structure or partially cleaved fragments, and information on the elemental composition and chemical structure of the outermost surface can be obtained.

[0042] FIG. 4 is a flowchart showing an example of a method for manufacturing a light-emitting element according to Embodiment 1. As shown in FIG. 4, the method for manufacturing a light-emitting element according to Embodiment 1 includes a step of forming a first functional layer 12 (S10), a step of forming a fluorine-containing film 3 on the first functional layer 12 (S20), and a step of applying a solution containing an organic compound 21 containing fluorine and quantum dots 2 onto the fluorine-containing film 3 (S30). The fluorine-containing film 3 may be a liquid-repellent resist film. The organic compound 21 may be a ligand agent with a fluorine terminal.

[0043] The quantum dots 2 used in the light-emitting layer 13 can be coordinated with the fluorine-terminated organic compound 21 as a ligand by an organic ligand substitution treatment. The organic ligand substitution treatment can be a common method. A solution containing the fluorine-terminated organic compound 21 is added to the initial quantum dot dispersion liquid, and ultrasonic treatment or the like is performed. If necessary, this treatment (ultrasonic treatment, supernatant removal, redispersion, etc.) is repeated.

[0044] By coordinating the fluorine-terminated organic compound 21 with the quantum dots 2 in the solution, the wettability (coating property) with respect to the fluorine-containing film 3 (for example, a liquid-repellent resist film) is improved. By making the fluorine-containing film 3 liquid-repellent, the first functional layer 12 (for example, a hole transport layer) can be protected during the upper layer formation (process). The polarity of the fluorine-containing film 3 may be highly polar enough to repel highly polar water.

[0045] Regarding the material of the first functional layer 12, when the first functional layer 12 is a hole transport layer, any hole transport material that can transport the holes injected from the first electrode 11, which is an anode, to the quantum dot layer 13 may be used, and it is not particularly limited. For example, TFB, which is a material not containing nanoparticles, can be used.

[0046] Regarding the material of the second functional layer 14, when the second functional layer 14 is an electron transport layer, any electron transport material that can transport the electrons injected from the second electrode 15, which is a cathode, to the quantum dot layer 13 may be used, and it is not particularly limited. For example, TPBi, which is a material not containing nanoparticles, can be used.

[0047] As materials for the hole transport layer (HTL), organic materials such as poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-4-sec-butylphenyl))diphenylamine] (TFB), poly(4-butyltriphenylamine) (p-TPD), poly(9-vinylcarbazole) (PVK), [9,9’-[1,2-phenylenebis(methylene)]bis[N3,N3,N6,N6-tetrakis(4-methoxyphenyl)-9H-carbazole-3,6-diamine] (V886), 7,7’-bis[1,4]benzoxazino[2,3,4-kl]phenoxazine (HN-D1), etc., and inorganic materials such as NiO nanoparticles can be used.

[0048] As materials for the electron transport layer (ETL), organic materials such as (2,2’,2’’-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi), bathocuproine (BCP), nanoparticles of organometallic complexes, etc., and inorganic materials such as nanoparticles of n-type oxide semiconductors can be used. Examples of the organometallic complex include tris(8-quinolinol)aluminum complex (Alq3), etc. Examples of the n-type oxide semiconductor include metal oxides such as ZnO, ZnMgO, etc.

[0049] Figure 5 is a cross-sectional view showing the configuration and carrier path of the comparative example. Figure 6 is a cross-sectional view showing the carrier path of the light-emitting element according to Embodiment 1. In the light-emitting layer of the comparative example, the ligand of the quantum dot Q on the liquid-repellent resist layer does not contain fluorine. In this case, gaps are likely to be formed in the light-emitting layer, leading to an increase in interface defects between the resist layer and the light-emitting layer and deterioration of the flatness of the light-emitting layer. Also, as shown in Figure 4, since the number of carrier paths is limited due to the formation of gaps, in-plane variations in light-emitting luminance are likely to occur.

[0050] On the other hand, in the light-emitting element 1 according to Embodiment 1, as shown in FIG. 6, it is difficult to form a gap on the fluorine-containing film 3. For this reason, the generation of interface defects between the fluorine-containing film 3 and the light-emitting layer 13 is reduced, and the flatness of the light-emitting layer 13 is improved. Further, since the number of carrier paths CP increases, the light-emission distribution of the light-emitting layer 13 becomes uniform, and the voltage between the first electrode 11 and the second electrode 15 also decreases.

[0051] An ultrathin insulating film can be used for the fluorine-containing film 3. The ultrathin insulating film may be composed of, for example, PMMA (poly(methylmethacrylate)), PEIE (polyethylenimine ethoxylated), or PEI (polyethylenimine), etc.

[0052] 〔Embodiment 2〕 FIGS. 7 and 8 are schematic diagrams showing the configuration of the light-emitting element according to Embodiment 2. In Embodiment 2, an organic substance 21 terminated with fluorine and a halogen atom 23 are coordinated as ligands to the quantum dots 2. The halogen atom 23 may be a fluorine atom (F) bonded to the surface of the quantum dots 2. The organic compound 21 may be a long-chain ligand, and the halogen atom may be a short-chain ligand. By bonding the short-chain ligand to the quantum dots 2 so as to enter between the long-chain ligands, the gap between the fluorine-containing film 3 and the quantum dots 2 can be filled.

[0053] In addition to the organic compound 21, by providing the halogen atom 23 as a ligand to the quantum dots 2, the wettability, coatability, and reliability with respect to the fluorine-containing film 3 are further improved. By compensating for the surface defects of the quantum dots 2 by the halogen atom 23, the light-emission efficiency is also improved. Regarding the manufacturing method of Embodiment 2, the organic compound 21 and the halogen element may be included in the solution of FIG. 4.

[0054] In FIG. 7, quantum dots 2 coordinated with a fluorine-terminated organic compound 21 and halogen atoms 23 are disposed throughout the light-emitting layer 13, but it is not limited thereto. As shown in FIG. 8, quantum dots 2 coordinated with a fluorine-terminated organic compound 21 and halogen atoms 23 may be disposed at an interface portion (for example, the first layer) with the fluorine-containing film 3, and quantum dots 2 coordinated with only the organic compound 21 may be disposed in other portions. Note that if the ligand is only a halogen atom, the dispersibility of the quantum dots will be low.

[0055] 〔Embodiment 3〕 FIG. 9 is a flowchart showing an example of a method for manufacturing a light-emitting element according to Embodiment 3. FIG. 10 is a cross-sectional view showing an example of a method for manufacturing a light-emitting element according to Embodiment 3. In FIG. 9, a step of forming an edge cover film 8 (S50), a step of forming a first functional layer 12 (S60), a step of planarizing a liquid-repellent resist film RZ on the first functional layer 12 (S70, see FIG. 10), a step of patterning the planar resist film RZ (S80, see FIG. 10), and a step of applying a solution YK containing an organic compound 21 containing fluorine and quantum dots 2 onto the liquid-repellent resist pattern RP obtained in step S80 (S90, see FIG. 10) are performed.

[0056] As shown in FIG. 10, after patterning of the planar resist film RZ, the fluorine-containing film 3 remains on a region (pixel opening region K) where the edge cover film 8 does not exist (for example, an island-shaped resist remaining film). A solution YK containing quantum dots 2, a fluorine-terminated organic compound 21 (organic ligand agent), and a solvent 25 may be applied onto the fluorine-containing film 3 which is the resist remaining film. The solution YK may be supplied over the entire surface. Since the fluorine-containing film 3 which is the resist remaining film has lower liquid repellency than the resist film RZ, the solution YK can be selectively applied onto the pixel opening region K. The light-emitting layer 13 can be formed by removing the solvent 25 from the solution (coating liquid) YK.

[0057] When the fluorine-terminated organic compound 21 coordinates as a ligand to the quantum dots 2, it becomes possible to apply the solution YK even on the liquid-repellent resist residual film (fluorine-containing film 3), and the quantum dots 2 are arranged without large gaps. Further, by adjusting the mobility of holes or electrons with the fluorine-containing film 3 (insulating liquid-repellent film) which is the resist residual film, the carrier balance can be enhanced and the light emission efficiency can be increased.

[0058] Each of the above-described embodiments is for illustrative and explanatory purposes and not for limiting purposes. Based on these illustrations and explanations, it is obvious to those skilled in the art that many variations are possible.

Explanation of Reference Numerals

[0059] 1, 1R, 1G, 1B light-emitting element 2 quantum dots 3 fluorine-containing film 8 edge cover film 7 pixel circuit board 11 first electrode 12 first functional layer 13, 13R, 13G, 13B light-emitting layer 14 second functional layer 15 second electrode 21 organic compound 23 halogen atom 30 display device V approval voltage A1 first region A2 second region A3 third region A4 fourth region CP carrier path

Claims

1. A first electrode and a second electrode, a light-emitting layer located between the first electrode and the second electrode, having quantum dots and containing fluorine, a first functional layer located between the first electrode and the light-emitting layer, a second functional layer located between the second electrode and the light-emitting layer, and a fluorine-containing film located between the first functional layer and the second functional layer, a light-emitting device.

2. The light-emitting device according to claim 1, wherein the fluorine-containing film contains a liquid-repellent component.

3. The light-emitting device according to claim 1 or 2, wherein the fluorine-containing film contains a polymer compound.

4. The light-emitting device according to claim 1, wherein the fluorine-containing film is insulating.

5. Of the two regions obtained by bisecting the region sandwiched between the first functional layer and the second functional layer in the thickness direction thereof, the region located on the first functional layer side is defined as a first region, and the region located on the second functional layer side is defined as a second region. The light-emitting device according to claim 1, wherein the fluorine-containing film is included in the first region.

6. The light-emitting device according to claim 5, wherein the first region has a higher fluorine concentration than the second region.

7. An edge cover film in contact with an end face of the first electrode is provided, the first functional layer and the second functional layer extend above the edge cover film, a region located between the quantum dots and the first functional layer is defined as a third region, a region located above the edge cover film and sandwiched between the first functional layer and the second functional layer is defined as a fourth region, The light-emitting device according to claim 1, wherein the third region has a higher fluorine concentration than the fourth region.

8. The light-emitting device according to claim 1, wherein the fluorine-containing film has a layer shape in contact with the first functional layer or the second functional layer.

9. The light-emitting device according to claim 1, wherein the thickness of the fluorine-containing film is smaller than the thickness of the first functional layer.

10. The light-emitting device according to claim 1, wherein the fluorine-containing film is a resist film containing fluorine.

11. The light-emitting device according to claim 1, wherein the light-emitting layer contains an organic compound containing the fluorine.

12. The light-emitting device according to claim 1, wherein the light-emitting layer contains a halogen element located on the surface of the quantum dots.

13. The light-emitting device according to claim 1, wherein the fluorine-containing film contains a polymer compound having an alkyl group.

14. The light-emitting device according to claim 11, wherein the organic compound is represented by the following structural formula (1) or (2). （１） 【Chemical 1】 （２） 【Chemical 2】

15. The light-emitting device according to claim 11, wherein the organic compound includes a chain compound.

16. The light-emitting device according to claim 11, wherein the organic compound has a plurality of coordination functional groups.

17. The light-emitting device according to claim 11, wherein the organic compound includes a polycyclic aromatic hydrocarbon having two or more benzene rings.

18. The light-emitting device according to claim 1, wherein the fluorine-containing film is an island-shaped resist residual film.

19. The light-emitting device according to claim 1, wherein a part of the fluorine-containing film is located in the light-emitting layer.

20. The light-emitting device according to claim 1, wherein the first functional layer is an electron transport layer or a hole transport layer.

21. A display device comprising the light-emitting device according to claim 1 and a pixel circuit board, wherein the first electrode is provided closer to the pixel circuit board than the second electrode.

22. A method for manufacturing a light-emitting device, comprising: a step of forming a first functional layer; a step of forming a fluorine-containing film on the first functional layer; and a step of coating a solution containing a fluorine-containing compound and quantum dots on the fluorine-containing film.

23. The method for manufacturing a light-emitting device according to claim 22, wherein the fluorine-containing film is a liquid-repellent resist film.

24. The method for manufacturing a light-emitting device according to claim 22 or 23, wherein the fluorine-containing compound is an organic compound having fluorine at its terminal.

25. The method for manufacturing a light-emitting device according to claim 22, wherein the solution further contains a halogen element.

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