Display device, eyeglasses, camera, and method for manufacturing the display device

Abstract

To provide a see-through type display that can miniaturize pixels, other devices (glasses and camera) having the display, and a method for manufacturing the display.SOLUTION: A display of the present invention has a first substrate having a first single crystal semiconductor substrate provided with a plurality of light emitting units and a first driving circuit that drives the plurality of light emitting units, and the first single crystal semiconductor substrate has a plurality of light guide units for transmitting light to achieve a see-through function.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a display device, eyeglasses, a camera, and a method for manufacturing a display device. [Background technology]

[0002] Patent Document 1 discloses a see-through type self-luminous display device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Publication No. 2016 / 0133680 Summary of the Invention [Problem to be solved by the invention]

[0004] Patent Document 1 discloses that a circuit including a thin film transistor (TFT) is formed on a transparent substrate as a drive circuit for a self-luminous element. The material of the active layer of the TFT is an oxide semiconductor such as polysilicon or IGZO.

[0005] However, compared to MOS transistors formed on single-crystal silicon substrates, TFTs (active layers of TFTs) have drawbacks such as inability to be miniaturized, low carrier mobility, and large leakage current when off. For these reasons, display devices using TFTs are not suited to achieving high definition, high speed, low power consumption, and high functionality.

[0006] Therefore, an object of the present invention is to provide a see-through display device that allows miniaturization of pixels, other devices (such as glasses and cameras) that include the display device, and a method for manufacturing the display device. [Means for solving the problem]

[0007] A first aspect of the present invention is a display device comprising a first substrate having a first single crystal semiconductor substrate provided with a plurality of light-emitting portions and a first drive circuit that drives the plurality of light-emitting portions, the first single crystal semiconductor substrate having a plurality of light-guiding portions that transmit light so as to realize a see-through function.

[0008] A second aspect of the present invention is a pair of eyeglasses having a lens unit with the above-mentioned display device and a frame that holds the lens unit.A third aspect of the present invention is a camera having an image sensor and a finder with the above-mentioned display device.

[0009] A fourth aspect of the present invention is a method for manufacturing a display device, comprising the steps of: preparing a single crystal semiconductor substrate provided with a drive circuit that drives a plurality of light-emitting elements; forming a plurality of light-transmitting light-guiding elements in the single crystal semiconductor substrate so as to realize a see-through function; and forming the plurality of light-emitting elements in the single crystal semiconductor substrate. [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a see-through display device that allows miniaturization of pixels, other devices (glasses, cameras, etc.) that include the display device, and a method for manufacturing the display device. [Brief explanation of the drawings]

[0011] [Figure 1] 1A and 1B are cross-sectional and plan views of a display device according to a first embodiment; [Figure 2] 1 is an example of a circuit diagram of a display device according to embodiment 1. [Figure 3] 1 is an example of a circuit diagram of a subpixel according to embodiment 1. [Figure 4] 1 is a cross-sectional view illustrating an example of a manufacturing method for the display device according to the first embodiment. [Figure 5] 1 is a cross-sectional view illustrating an example of a manufacturing method for the display device according to the first embodiment. [Figure 6] 1 is a cross-sectional view illustrating an example of a manufacturing method for the display device according to the first embodiment. [Figure 7] FIG. 1 is a plan view showing an example of a pixel arrangement according to the first embodiment; [Figure 8] FIG. 1 is a plan view showing an example of a pixel arrangement according to the first embodiment; [Figure 9] 10 is a cross-sectional view of a display device according to a second embodiment of the present invention; [Figure 10] 10 is a cross-sectional view of a display device according to a third embodiment of the present invention; [Figure 11] 10 is a cross-sectional view of a display device according to a fourth embodiment of the present invention; [Figure 12] 10 is a cross-sectional view of a display device according to a fifth embodiment of the present invention; [Figure 13] 10A and 10B are cross-sectional views illustrating an example of a manufacturing method for a display device according to a fifth embodiment. [Figure 14] 10A and 10B are cross-sectional views illustrating an example of a manufacturing method for a display device according to a fifth embodiment. [Figure 15] 13 is a cross-sectional view of a display device according to a sixth embodiment of the present invention; [Figure 16] An example of the external view of smart glasses according to Usage Example 1 [Figure 17] An example of the external view of the camera according to Usage Example 2 [Figure 18] An example of a cross-sectional view of a telescope according to Usage Example 3 DETAILED DESCRIPTION OF THE INVENTION

[0012] (Embodiment 1) Hereinafter, a first embodiment of the present invention will be described. The display device according to the first embodiment is a self-luminous display device, for example, an organic light-emitting display device (display) having organic light-emitting diodes. The display device according to the first embodiment has an optical see-through function that transmits external light.

[0013] Fig. 1(a) is a cross-sectional view of a display device 1 according to embodiment 1, and Fig. 1(b) is a plan view of the display device 1. As shown in Fig. 1(a), the display device 1 has a structure in which a first substrate 20 provided with a plurality of light-emitting sections and a second substrate 50 are bonded together.

[0014] FIG. 1(b) is a plan view of a portion of the display device 1 as viewed from the light-emitting section side. The display device 1 has a plurality of pixels 100 and a plurality of light-transmitting sections 11T that transmit light from the back surface of the display device 1 to the front surface. The front surface is the surface on the light-emitting section side, and the back surface is the surface opposite the front surface. The display device 1 is a color display device, and each pixel 100 consists of three sub-pixels 110 corresponding to three colors: red, blue, and green. The red light-emitting section 11R, which is a light-emitting section that emits red light, corresponds to the red sub-pixel 110, the green light-emitting section 11G, which is a light-emitting section that emits green light, corresponds to the green sub-pixel 110, and the blue light-emitting section 11B, which is a light-emitting section that emits blue light, corresponds to the blue sub-pixel 110. The display device 1 has a plurality of pixels 100 arranged in a matrix of several thousand rows and several thousand columns, and a plurality of light-transmitting sections 11T arranged in a matrix of several thousand rows and several thousand columns such that the pixels 100 correspond one-to-one to the light-transmitting sections 11T.

[0015] The number of pixels 100 and the light-transmitting portions 11T is not particularly limited. Two or more light-transmitting portions 11T may be arranged for one pixel 100, or one light-transmitting portion 11T may be arranged for two or more pixels 100. The number of light-emitting portions (sub-pixels 110) that make up one pixel may be more or less than three, and the emitted color of the light-emitting portions that make up one pixel is not particularly limited. The display device 1 may be a monochrome display device, in which case one light-emitting portion may be one pixel.

[0016] 1(a) is a cross-sectional view of the A-A' line in FIG. 1(b). The first substrate 20 includes a first semiconductor substrate 21, and metal wiring 22, bonding metal wiring 23, and a gate electrode 25 of a MOS transistor are formed on the back surface of the first semiconductor substrate 21. The back surface of the plate 21 is the surface facing the second substrate 50, and is the lower surface in Fig. 1(a). An interlayer insulating film 24 is formed on the back surface of the first semiconductor substrate 21 so as to fill spaces between the metal wiring 22, the bonding metal wiring 23, and the gate electrode 25. Also, on the back surface of the first semiconductor substrate 21, STI (Shallow Trench Isolation) 28 for isolating the MOS transistor having the gate electrode 25 is formed.

[0017] The second substrate 50 includes a second semiconductor substrate 51, and metal wiring 52, bonding metal wiring 53, and a gate electrode 55 of a MOS transistor are formed on the front surface of the second semiconductor substrate 51. The front surface of the second semiconductor substrate 51 is the surface facing the first substrate 20, and is the upper surface in FIG. 1( a). An interlayer insulating film 54 is formed on the front surface of the second semiconductor substrate 51 so as to fill spaces between the metal wiring 52, the bonding metal wiring 53, and the gate electrode 55. An STI 58 for isolating the MOS transistor having the gate electrode 55 is also formed on the front surface of the second semiconductor substrate 51.

[0018] The first semiconductor substrate 21 and the second semiconductor substrate 51 are single crystal semiconductor substrates. The first semiconductor substrate 21 and the second semiconductor substrate 51 are preferably single crystal silicon substrates. The metal wirings 22 and 52 are made of, for example, copper (Cu), tungsten (W), aluminum (Al), etc. The bonding metal wirings 23 and 53 are also made of, for example, copper (Cu), tungsten (W), aluminum (Al), etc. The MOS transistor having the gate electrode 25 and the MOS transistor having the gate electrode 55 are MOS transistors formed by a general CMOS process. The interlayer insulating films 24 and 54 are transparent films made of silicon oxide or the like.

[0019] By bonding the first substrate 20 and the second substrate 50 together, the bonding metal wiring 23 and the bonding metal wiring 53 are electrically connected. The bonding metal wiring 23 and the bonding metal wiring 53 are electrically connected by metal bonding, such as Cu-Cu bonding. The metal bonding may be metal diffusion bonding. The metal bonding strengthens the adhesion between the first substrate 20 and the second substrate 50.

[0020] An insulating film 32 is laminated on the front surface of the first semiconductor substrate 21. The front surface of the first semiconductor substrate 21 is the surface opposite to the back surface of the first semiconductor substrate 21, and is the upper surface in FIG. 1(a). A lower electrode 41, an organic EL film 42, and an upper electrode 43 are disposed on the upper side of the insulating film 32. That is, a red light-emitting unit 11R including the lower electrode 41, the organic EL film 42, the upper electrode 43, and a color filter 45R (described later) is disposed on the first semiconductor substrate 21 with the insulating film 32 sandwiched therebetween. The lower electrode 41 is an electrode made of a metal such as Cu, and the upper electrode 43 is a transparent electrode that transmits light. The lower electrode 41, the organic EL film 42, and the upper electrode 43 constitute an organic light-emitting diode (OLED). The lower electrode 41 is the anode of the OLED, and the upper electrode 43 is the cathode of the OLED.

[0021] A red color filter 45R is formed on the upper side of the upper electrode 43 via a planarization film 44. By forming the red color filter 45R, the red light-emitting section 11R shown in FIG. 1(b) is formed (an OLED (light-emitting section of an OLED) is used as the red light-emitting section 11R). Although not shown in FIG. 1(a), by forming a green color filter, the green light-emitting section 11G is formed, and by forming a blue color filter, the blue light-emitting section 11B is formed. Then, a protective film 46 is formed over the entire region in which the multiple light-emitting sections are arranged. The planarization film 44 is a transparent film made of silicon oxide, resin, or the like, and the protective film 46 is also a transparent film made of resin, or the like.

[0022] The first substrate 20 has a through electrode 26 formed thereon, which penetrates the first semiconductor substrate 21 and the insulating film 32. The through electrode 26 electrically connects the MOS transistor of the first semiconductor substrate 21 (the MOS transistor provided on the first semiconductor substrate 21) to the lower electrode 41. The material of the through electrode 26 is, for example, a metal such as Cu.

[0023] To achieve a see-through function, the first semiconductor substrate 21 is formed with a plurality of light-transmitting light guide sections 29, and the second semiconductor substrate 51 is formed with a plurality of light-transmitting light guide sections 59. The plurality of light guide sections 29 and the plurality of light guide sections 59 are arranged within a region where a plurality of light-emitting sections are arranged (within the pixel array section 7, which will be described later). Specifically, in a portion that will become the light-transmitting section 11T, a hole penetrating the first semiconductor substrate 21 and a hole penetrating the second semiconductor substrate 51 are formed. The portion where the hole penetrating the first semiconductor substrate 21 is formed becomes the light-transmitting section 29, and the portion where the hole penetrating the second semiconductor substrate 31 is formed becomes the light-transmitting section 59. The holes formed in the light-transmitting sections 29 and 59 are preferably filled with a transparent material such as silicon oxide. By forming the light-transmitting sections 29 and 59, the light-transmitting section 11T is formed, and external light 12 passes through the display device 1. An insulating film 33 made of silicon oxide or the like is formed on the upper side of the light-guiding section 29. Although Fig. 1(a) shows a structure in which the upper electrode 43 is not present in the light-transmitting section 11T, the upper electrode 43 may be present in the light-transmitting section 11T because it is transparent.

[0024] Green light-emitting section 11G and blue light-emitting section 11B are located along line BB' in Fig. 1(b). The cross sections of green light-emitting section 11G and blue light-emitting section 11B are similar to the cross section of red light-emitting section 11R shown in Fig. 1(a).

[0025] 2 is a circuit diagram of the display device 1. The display device 1 has a pixel array section 7, which is a display area, and a peripheral circuit section 8 that drives the pixel array section 7. The peripheral circuit section 8 includes a vertical scanning circuit 200, a signal output circuit 300, and a control circuit 400.

[0026] The signal output circuit 300 is a circuit that outputs an image signal (information on the luminance and chromaticity of the pixel 100) to each pixel 100. The vertical scanning circuit 200 is a circuit that outputs a signal for controlling a drive circuit of each pixel 100. The control circuit 400 is a circuit that controls the drive timing, luminance, chromaticity, etc. of each pixel 100, and is connected to the signal output circuit 300 and the vertical scanning circuit 200 via wiring.

[0027] The vertical scanning circuit 200 is connected to the plurality of pixels 100 via a plurality of scanning line groups 120. The signal output circuit 300 has a horizontal scanning circuit 301, column DAC circuits 302 which are a plurality of digital-to-analog conversion circuits (DAC circuits), and a plurality of column driver circuits 303 which are a plurality of driver circuits. The column driver circuit 303 has a plurality of driver circuits respectively corresponding to a plurality of vertical signal lines 124 connected to the plurality of pixels 100 (a plurality of sub-pixels 110). The column DAC circuit 302 has a plurality of DAC circuits respectively corresponding to the plurality of vertical signal lines 124, i.e., a plurality of DAC circuits respectively corresponding to a plurality of driver circuits.

[0028] The horizontal scanning circuit 301 scans the multiple DAC circuits included in the column DAC circuit 302, and outputs the digital signal input from the control circuit 400 to each DAC circuit. Each DAC circuit converts the input digital signal into an analog signal and outputs it to the corresponding driver circuit.

[0029] Each of the plurality of driver circuits included in the column driver circuit 303 outputs an analog signal input from a corresponding DAC circuit to a corresponding vertical signal line 124. The analog signal output from the driver circuit to the vertical signal line 124 is input (supplied) to a plurality of pixels 100 (a plurality of sub-pixels 110) connected to the vertical signal line 124.

[0030] A plurality of pixels 100 and a plurality of light-transmitting portions 11T are arranged in the pixel array portion 7. The plurality of pixels 100 and the plurality of light-transmitting portions 11T are arranged in a matrix. Each pixel 100 is made up of a red light-emitting portion 11R, a green light-emitting portion 11G, and a blue light-emitting portion 11R, which are all sub-pixels 110. Includes 11B.

[0031] 3 is a circuit diagram of a subpixel 110. The subpixel 110 includes an OLED 111 whose light emission luminance changes in response to a supplied current, a drive transistor 112, a selection transistor 113, switching transistors 114 and 115, and capacitors 116 and 117. In the first embodiment, p-channel transistors (PMOS transistors) are used as the drive transistor 112, the selection transistor 113, and the switching transistors 114 and 115. Note that at least one of these transistors may be an n-channel transistor (NMOS transistor).

[0032] The drain of the driving transistor 112 is connected in series to the anode of the OLED 111 via the through electrode 26, and the driving transistor 112 supplies a current to the OLED 111. The cathode of the OLED 111 is connected to a common voltage 125 for the entire pixel array section 7.

[0033] The scanning line group 120 includes scanning lines 121 to 123, and the gate of the selection transistor 113 is connected to the scanning line 121. The source of the selection transistor 113 is connected to a vertical signal line 124 via junction metal wirings 23 and 53, and the drain of the selection transistor 113 is connected to the gate of the drive transistor 112. A selection signal is supplied to the gate of the selection transistor 113 from the vertical scanning circuit 200 via the scanning line 121.

[0034] The gate of the switching transistor 114 is connected to a scanning line 122, the source of the switching transistor 114 is connected to a power supply voltage VDD, and the drain of the switching transistor 114 is connected to the source of the drive transistor 112. A signal for switching the light emission of the OLED 111 on and off is supplied to the gate of the switching transistor 114 from the vertical scanning circuit 200 via the scanning line 122.

[0035] The gate of the switching transistor 115 is connected to a scan line 123, the source of the switching transistor 115 is connected to a ground voltage VSS, and the drain of the switching transistor 115 is connected to the anode of the OLED 111. A signal for controlling the voltage of the anode of the OLED 111 during a calibration period is applied to the gate of the switching transistor 115 from the vertical scanning circuit 200 via the scan line 123.

[0036] The capacitance element 116 is connected between the gate of the driving transistor 112 and the source of the driving transistor 112. The capacitance element 117 is connected between the source of the driving transistor 112 and the power supply voltage VDD.

[0037] In the subpixel 110, the selection transistor 113 is rendered conductive in response to a selection signal (write signal) supplied to its gate from the vertical scanning circuit 200 via the scanning line 121. This operation causes an image signal (luminance information of the subpixel 110) to be sampled from the vertical signal line 124 to the gate electrode of the drive transistor 112. During the calibration period, a reference voltage is sampled from the vertical signal line 124, and variations in the threshold voltage of the drive transistor 112 of each subpixel 110 are corrected. This makes it possible to reduce variations in the luminance and chromaticity of each pixel 100 caused by variations in the threshold voltage.

[0038] In the first embodiment, the drive transistor 112, the selection transistor 113, and the switching transistors 114 and 115 shown in FIG. 3 are formed on a single crystal semiconductor substrate. The drive transistor 112, the selection transistor 113, the switching transistor 114, and part of the switching transistor 115 correspond to the MOS transistor having the gate electrode 25 described with reference to FIG. 1(a). The remaining sub-pixels 110, including the switching transistor 113, the switching transistor 114, and the switching transistor 115, correspond to MOS transistors having gate electrodes 55. In other words, a part of the drive circuit (the above-mentioned MOS transistors and their peripheral circuits) that drives the sub-pixels 110 (light-emitting portions) is formed on the first semiconductor substrate 21, and the remaining drive circuit that drives the sub-pixels 110 is formed on the second semiconductor substrate 51.

[0039] This allows for a smaller driving circuit (smaller pixels) compared to when TFTs are used, thereby enabling higher-resolution display by the display device 1. For example, the pixel pitch can be set to 30 μm or less. The pixel pitch can also be set to 10 μm or less, or even 5 μm or less. Furthermore, the high carrier mobility of MOS transistors enables faster processing and response in the display device 1 (driving circuit). For example, the display device 1 can achieve a higher frame rate. Furthermore, the low leakage current of MOS transistors when off allows for lower power consumption by the display device 1. Furthermore, the capacitive elements 116 and 117 can be used to correct variations in luminance and chromaticity for each pixel, thereby enabling the display device 1 to have higher functionality. Correcting variations in luminance and chromaticity for each pixel enables a display with minimal in-plane variation.

[0040] Furthermore, by forming circuits on the second semiconductor substrate 51, it is possible to further enhance the functionality of the display device 1. For example, it is possible to give the circuits on the second semiconductor substrate 51 at least a part of the functions of the peripheral circuit section 8. This allows the peripheral circuits of the pixel array section 7 to be made smaller, thereby enabling the miniaturization of the display device 1. Furthermore, it is possible to divide the pixel array section 7 into multiple regions and perform control such as changing the frame rate for each region.

[0041] 1(a), 4(a), 4(b), 5(a), 5(b), 6(a), and 6(b) will be used to describe a manufacturing method of the display device 1. FIGS. 4(a), 4(b), 5(a), 5(b), 6(a), and 6(b) are cross-sectional views for describing an example of a manufacturing method of the display device 1.

[0042] First, as shown in FIG. 4(a), a first substrate 20 having a first semiconductor substrate 21 and a second substrate 50 having a second semiconductor substrate 51 are prepared.

[0043] The first substrate 20 is a substrate on which a light emitting portion is formed in a later process. On the first substrate 20, metal wiring 22, bonding metal wiring 23, an interlayer insulating film 24, a MOS transistor having a gate electrode 25, and an STI 28 are arranged using a normal semiconductor manufacturing process.

[0044] The second substrate 50 is also fabricated using a typical semiconductor manufacturing process, with metal wiring 52, bonding metal wiring 53, an interlayer insulating film 54, a MOS transistor having a gate electrode 55, and an STI 58 disposed thereon. A hole penetrating the second semiconductor substrate 51 is formed in a portion of the second semiconductor substrate 51 that will become the light guide portion 59. Because the second semiconductor substrate 51 also plays a role in maintaining the physical strength of the display device 1, the second semiconductor substrate 51 is thick, e.g., 300 μm to 700 μm in thickness. For this reason, the hole for the light guide portion 59 is preferably formed by wet etching. The hole for the light guide portion 59 is preferably formed before the MOS transistor, the gate electrode 55 of the MOS transistor, and the STI 58 are formed. As described above, it is preferable to fill the hole in light guiding section 59 with a transparent material, but in the first embodiment, the ratio of thickness to width (aspect ratio) of light guiding section 59 is large, that is, the hole in light guiding section 59 is long and narrow, making it difficult to fill the hole in light guiding section 59 with a transparent material. Therefore, in the first embodiment, the hole in light guiding section 59 is not filled with a transparent material.

[0045] Next, as shown in FIG. 4(b), the orientation of the first substrate 20 is changed so that the bonding metal wiring 23 of the first substrate 20 faces the bonding metal wiring 53 of the second substrate 50. Then, as shown in FIG. 5(a), the first substrate 20 and the second substrate 50 are bonded together using wafer bonding technology. Thus, the bonding metal wiring 23 and the bonding metal wiring 53 are electrically connected. When bonding the first substrate 20 and the second substrate 50 together, the surfaces to be bonded are subjected to a surface treatment, and alignment is performed to reduce misalignment in the bonding position (for example, misalignment between the bonding metal wiring 23 and the bonding metal wiring 53). The surface of the first substrate 20 to be bonded to the second substrate 50 is the surface (rear surface) opposite to the surface (front surface) on which the multiple light emitting sections are provided.

[0046] Next, as shown in FIG. 5(b), the first semiconductor substrate 21 is thinned. As a result, for example, the thickness of the first semiconductor substrate 21 becomes 2 μm or more and 10 μm or less. The thickness of the first semiconductor substrate 21 may be greater than 10 μm, for example, 2 μm or more and 30 μm or less. The method for thinning the first semiconductor substrate 21 may be any of mechanical polishing, chemical mechanical polishing (CMP), dry etching, wet etching, etc. After thinning, an insulating film 32 is formed on the surface of the first semiconductor substrate 21 (the surface on which the light-emitting portion is to be formed) by a plasma CVD method or the like.

[0047] Next, as shown in FIG. 6(a), a plurality of holes are formed penetrating the first semiconductor substrate 21 and the insulating film 32. Through electrodes 26 are formed in some of the plurality of holes. The remaining portions of the plurality of holes become light guide sections 29. The holes of the light guide sections 29 are filled with a transparent material. The plurality of holes are preferably formed, for example, by patterning a resist so that the holes are formed in desired positions, and then using a dry etching method. For the process of forming the holes and forming the through electrodes 26 and transparent materials in the holes, it is preferable to use a TSV (Through Silicon Via) formation technology.

[0048] 6(b), a lower electrode 41, an organic EL film 42, and an upper electrode 43 are formed in the portion that will become the red light-emitting portion 11R. An insulating film 33 is formed in the portion that will become the light-transmitting portion 11T.

[0049] 1(a), a planarization film 44 is formed, and a color filter 45R is formed in the portion that will become the red light-emitting section 11R. Then, a protection film 46 is formed over the entire pixel array section 7, and the display device 1 is completed.

[0050] 7(a), 7(b), 8(a), and 8(b) are plan views (plan views viewed from a direction perpendicular to the front surface (surface on which a plurality of light-emitting units is provided) of the first substrate 20) showing an example of a pixel arrangement according to the first embodiment. As shown in FIG. 7(a), the light-transmitting unit 11T, the green light-emitting unit 11G, the red light-emitting unit 11R, and the blue light-emitting unit 11B may be arranged in a square. As shown in FIG. 7(b), the light-transmitting unit 11T, the green light-emitting unit 11G, the red light-emitting unit 11R, and the blue light-emitting unit 11B may be arranged in a square, and the light-transmitting unit 11T (light-guiding units 29, 59) may be larger than the green light-emitting unit 11G, the red light-emitting unit 11R, and the blue light-emitting unit 11B. Alternatively, as shown in FIG. 8(a), the light-transmitting unit 11T, the green light-emitting unit 11G, the red light-emitting unit 11R, and the blue light-emitting unit 11B may be arranged in a delta configuration. As shown in FIG. 8(b), light-transmitting section 11T, green light-emitting section 11G, red light-emitting section 11R, and blue light-emitting section 11B may be arranged in a delta configuration, with light-transmitting section 11T (light-guiding sections 29, 59) being larger than green light-emitting section 11G, red light-emitting section 11R, and blue light-emitting section 11B. In any configuration, the pitch of the pixels and the pitch of light-transmitting section 11T (light-guiding sections 29, 59) are preferably 30 μm or less (2 μm or more and 30 μm or less). Furthermore, the width of one light-transmitting section 11T (light-guiding section 29, 59) is preferably 2 μm or more and 28 μm or less.

[0051] Here, it can be considered as a pixel having a light-transmitting section 11T, a green light-emitting section 11G, a red light-emitting section 11R, and a blue light-emitting section 11B as sub-pixels. These sub-pixels can be considered to be arranged in a square array or a delta array. The size of the light-transmitting section in a planar view may be the same as the size of the light-emitting section, i.e., the sub-pixel, in a planar view. Also, as described above, the size of the light-transmitting section in a planar view may be larger than the size of the light-emitting section in a planar view. Furthermore, the position of the light-transmitting section 11T is not limited to these, and the sub-pixels may be arranged in a matrix. In this case, the light transmitting portions 11T may be arranged in every other column or row in the row direction or column direction.

[0052] As described above, in the first embodiment, a plurality of light guide sections 29 are formed on a single crystal semiconductor substrate (first semiconductor substrate 21), which has been considered unsuitable for a see-through display device due to its opaqueness, thereby realizing the see-through display device 1. Furthermore, by forming the drive circuit for the light emitting section on the single crystal semiconductor substrate, it becomes possible to miniaturize the pixels of the display device 1, which in turn enables the display device 1 to have higher definition, higher speed, lower power consumption, and higher functionality.

[0053] Although an example in which a color filter is used in the light-emitting section has been described, the light-emitting colors of the plurality of light-emitting sections may be made different by using different organic light-emitting materials (for example, the organic light-emitting material that becomes the organic EL film 42) among the plurality of light-emitting sections. In this case, color filters do not need to be used. Furthermore, although an example in which the light-emitting section is an OLED has been described, other self-luminous elements such as light-emitting diodes (LEDs) may also be used as the light-emitting sections. In this case, for example, minute LEDs may be arranged on the first semiconductor substrate 21, or LEDs of each color may be patterned.

[0054] (Embodiment 2) A second embodiment of the present invention will now be described. FIG. 9 is a cross-sectional view of a display device 2 according to the second embodiment. In the second embodiment, a single light guide section 69 is formed across the entire pixel array section 7 on a second semiconductor substrate 51, instead of the multiple light guide sections 59 described in the first embodiment. In the second embodiment, the bonding metal wirings 23 and 53 formed in the pixel array section 7 in the first embodiment are formed in the peripheral circuit section 8. Although color filters and the like are not shown in FIG. 9, they are present as in the first embodiment. As described in the first embodiment, color filters may not be used, and the display device 2 may be a monochrome display device. In the case of a monochrome display device, color filters are not necessary.

[0055] The manufacturing method of the display device 2 is substantially the same as the manufacturing method of the display device 1 described in embodiment 1. The light guide section 69 is formed by the same method as the light guide section 59 of embodiment 1 described with reference to FIG.

[0056] As described in the first embodiment, the second semiconductor substrate 51 also plays a role in maintaining the physical strength of the display device 2, and therefore the second semiconductor substrate 51 is thick, for example, the thickness of the second semiconductor substrate 51 is 300 μm or more and 700 μm or less. For such a thick second semiconductor substrate 51, a large light guide section 69 that covers the entire pixel array section 7 can be formed more easily than the light guide section 59 of the first embodiment. Therefore, the display device 2 can be manufactured more easily than the display device 1 of the first embodiment.

[0057] (Embodiment 3) A third embodiment of the present invention will now be described. FIG. 10 is a cross-sectional view of a display device 3 according to the third embodiment. In the third embodiment, instead of the light guide sections 59 described in the first embodiment, a plurality of light guide sections 79 are formed on the second semiconductor substrate 51, each of which extends over a plurality of pixels 100 and a plurality of light transmission sections 11T. In the third embodiment, the bonding metal wirings 23 and 53 are formed in the peripheral circuit section 8 and in a portion of the pixel array section 7 where the second semiconductor substrate 51 remains. The bonding metal wirings 23 and 53 may be formed in either the peripheral circuit section 8 or the portion of the pixel array section 7 where the second semiconductor substrate 51 remains. Although color filters and the like are not shown in FIG. 10, they may be present as in the first embodiment. As described in the first embodiment, color filters may not be used, and the display device 3 may be a monochrome display device.

[0058] The manufacturing method of the embodiment 3 is substantially the same as the manufacturing method of the display device 1 described in the embodiment 1. The light guide section 79 is formed by the same method as the light guide section 59 of the embodiment 1 described with reference to FIG.

[0059] As described in the first embodiment, the second semiconductor substrate 51 also plays a role in maintaining the physical strength of the display device 3, and therefore the second semiconductor substrate 51 is thick, for example, the thickness of the second semiconductor substrate 51 is 300 μm or more and 700 μm or less. For such a thick second semiconductor substrate 51, a large light guide section 79 can be formed more easily than the light guide section 59 of the first embodiment. Therefore, the display device 3 can be manufactured more easily than the display device 1 of the first embodiment.

[0060] (Embodiment 4) A fourth embodiment of the present invention will now be described. FIG. 11 is a cross-sectional view of a display device 4 according to the fourth embodiment. In the fourth embodiment, a transparent substrate 61 is used instead of the second semiconductor substrate 51 described in the first embodiment. Because the interlayer insulating film 54 is transparent, the second substrate 50 can also be considered a transparent substrate. A substrate having a thermal expansion coefficient similar to that of a single-crystal silicon substrate, such as a sapphire substrate, is preferably used as the transparent substrate 61, but a general glass substrate may also be used. To maintain the physical strength of the display device 4, the transparent substrate 61 is preferably thick. For example, the thickness of the transparent substrate 61 is preferably 300 μm or more and 2000 μm or less. While color filters are not shown in FIG. 11, they are present as in the first embodiment. As described in the first embodiment, color filters may not be used, and the display device 4 may be a monochrome display device.

[0061] The manufacturing method of the display device 4 is substantially the same as the manufacturing method of the display device 1 described in embodiment 1. Metal wiring 52, bonding metal wiring 53, and an interlayer insulating film 54 are formed on a transparent substrate 61 to form a second substrate 50. However, in embodiment 4, a MOS transistor having a gate electrode 55 and an STI 58 are not provided in the second substrate 50. In embodiment 4, the drive transistor 112, selection transistor 113, switching transistor 114, and switching transistor 115 in FIG. 3 all correspond to MOS transistors having a gate electrode 25. In other words, all of the drive circuits (the above-mentioned MOS transistors and their peripheral circuits) that drive the subpixels 110 (light-emitting portions) are formed on the first semiconductor substrate 21.

[0062] In embodiment 1, a light guide section 59 is formed on the second semiconductor substrate 51, but in embodiment 4, a transparent substrate 61 is used instead of the second semiconductor substrate 51, so that a see-through display device can be realized without forming the light guide section 59.

[0063] (Embodiment 5) A fifth embodiment of the present invention will now be described. FIG. 12 is a cross-sectional view of a display device 5 according to the fifth embodiment. In the fifth embodiment, a transparent substrate 61 is used instead of the second substrate 50 described in the first embodiment. As described in the fourth embodiment, a substrate having a thermal expansion coefficient similar to that of a single-crystal silicon substrate, such as a sapphire substrate, is preferably used as the transparent substrate 61, but a general glass substrate may also be used. In order to maintain the physical strength of the display device 5, the transparent substrate 61 is preferably thick; for example, the thickness of the transparent substrate 61 is preferably 300 μm or more and 2000 μm or less. In the fifth embodiment, the first substrate 20 and the transparent substrate 61 are bonded together, for example, by Si-SiO bonding.

[0064] 1(a), 13(a), 13(b), 14(a), and 14(b) will be used to describe a method for manufacturing the display device 5. FIGS. 13(a), 13(b), 14(a), and 14(b) are cross-sectional views for describing an example of a method for manufacturing the display device 5.

[0065] First, as shown in FIG. 13(a), a first semiconductor substrate 21, which will become a part of the first substrate 20, and a transparent substrate 61 are prepared, and then they are bonded together by Si-SiO bonding. This Si-SiO bonding can be realized by anodic bonding or field-enhanced bonding. A substrate such as a sapphire substrate in the state shown in FIG. 13(a) may be prepared.

[0066] 13(b), a plurality of holes penetrating the first semiconductor substrate 21 are formed by etching in the portion of the first semiconductor substrate 21 that will become the light guide portion 29. In addition, an STI 28 is also formed in the first semiconductor substrate 21.

[0067] 14(a), a MOS transistor having a gate electrode 25, metal wiring 22, and an interlayer insulating film 24 are formed. In the fifth embodiment, the drive transistor 112, the selection transistor 113, the switching transistor 114, and the switching transistor 115 in FIG. 3 all correspond to MOS transistors having gate electrodes 25. That is, all of the drive circuits (the above-mentioned MOS transistors and their peripheral circuits) that drive the subpixels 110 (light-emitting portions) are formed on the first semiconductor substrate 21.

[0068] 14(b), an insulating film 32, a lower electrode 41, an organic EL film 42, and an upper electrode 43 are formed. The lower electrode 41, the organic EL film 42, and the upper electrode 43 are patterned so as not to be formed on the light-guiding section 29. In the fifth embodiment, a light-emitting section is provided on the first semiconductor substrate 21 with the interlayer insulating film 24, the insulating film 32, and the like sandwiched therebetween.

[0069] Then, a color filter and the like are formed in the same manner as in the process described with reference to Fig. 1(a) in embodiment 1. As described in embodiment 1, a color filter does not have to be formed, and a monochrome display device may be manufactured as the display device 5.

[0070] (Embodiment 6) A sixth embodiment of the present invention will now be described. FIG. 15 is a cross-sectional view of a display device 6 according to the sixth embodiment. The display device 6 is a modification of the display device 1 described in the first embodiment. Because the organic EL film 42 is transparent, the organic EL film 42 is formed in an area including above the light-guiding section 29. This allows some of the multiple light-emitting sections to be disposed above the light-guiding section 29. Light also is emitted from the light-transmitting section 11T. For this reason, the lower electrode 41 is a transparent electrode. The display device 6 does not use a color filter, and therefore can be either a color display device or a monochrome display device. For example, if the emission color of the organic EL film 42 differs among the multiple light-emitting sections, the display device 6 becomes a color display device. If the emission color of the organic EL film 42 is white in all of the multiple light-emitting sections, the display device 6 becomes a monochrome display device.

[0071] (Usage example 1) The display device according to the above embodiment may be an independent, stand-alone display device, but can be applied to various devices. Hereinafter, as a first use example of the display device according to the above embodiment, an example in which the display device is used in smart glasses (eyeglasses) will be described. FIG. 16 is an external view of smart glasses 500 using a display device 501 according to the above embodiment. The display device 501 is used in the lens unit of the smart glasses 500. In FIG. 16, the entire lens unit is the display device 501, but a part of the lens unit may also be the display device 501. The lens unit (display device 501) is held by the frame of the smart glasses 500. Specifically, the frame includes a rim 506 and temples 507 (temples), and the lens unit (display device 501) is held by the rim 506.

[0072] The display device 501 is a see-through display device. Therefore, even if a user wears the smart glasses 500 and places the display device 501 in front of his or her eyes, the user can see a real image (such as a landscape) beyond the display device 501, just as when wearing regular eyeglasses or sunglasses. The user can also see an image displayed on the display device 501. The image displayed on the display device 501 is visually perceived as being superimposed on the real image.

[0073] The smart glasses 500 can be lightweight because they do not use half mirrors or prisms. Furthermore, in the display device 501, the drive circuit for the light-emitting unit is formed on a single-crystal semiconductor substrate, which makes it possible to obtain effects such as high display resolution, high-speed processing and response, low power consumption, and small variations in pixel brightness and chromaticity.

[0074] (Usage example 2) As a second use example of the display device according to the embodiment, an example in which the display device is used in a camera (camera viewfinder) will be described. FIG. 17 is an external view of a camera 510 (imaging device) using a display device 513 according to the embodiment. For example, when taking a picture, a user holds a housing 511 and looks into a viewfinder 512. A display device 513 is incorporated in the viewfinder 512. Light from a subject passes through a photographing lens 514 and enters an imaging sensor 515 in the camera 510, where it is converted into an electrical signal (image signal) through photoelectric conversion by the imaging sensor 515. The imaging sensor 515 is, for example, a CMOS area sensor. The camera 510 may be a camera with a detachable lens unit including the photographing lens 514, or a camera in which the lens unit and the camera body are integrated.

[0075] Here, the viewfinder 512 is assumed to be an optical viewfinder (OVF). The display device 513 is a see-through display device. Therefore, when the user looks into the viewfinder 512, even if the display device 513 is placed directly in front of the user's eyes, the user can see the real image (subject) beyond the display device 513, just as when looking into a normal OVF. The user can also see the image displayed on the display device 513. The image displayed on the display device 513 is perceived as being superimposed on the real image.

[0076] Note that the viewfinder 512 may be switchable between an optical viewfinder (OVF) and an electronic viewfinder (EVF) in response to an operation by the user. For example, the viewfinder 512 can be used as an OVF if the space between the display device 513 and the subject is not obstructed. On the other hand, if the space between the display device 513 and the subject is obstructed and an image based on an image signal output from the image sensor 515 (an image captured by the image sensor 515) is displayed on the display device 513, the viewfinder 512 can be used as an EVF.

[0077] The viewfinder 512 does not use a half mirror or a prism, and therefore can be lightweight. Also, the volume occupied by the viewfinder 512 within the camera 510 can be reduced. Furthermore, in the display device 513, a drive circuit for a light-emitting unit is formed on a single-crystal semiconductor substrate, and therefore, it is possible to obtain effects such as high display resolution, high-speed processing and response, low power consumption, and small variations in pixel brightness and chromaticity.

[0078] (Usage example 3) As a third example of use of the display device according to the embodiment, an example in which the display device is used in a telescope will be described. Figures 18(a) and 18(b) are cross-sectional views of telescopes 520 and 527 that use a display device 521 according to the embodiment. The telescope 520 in Figure 18(a) is a telescope without a camera function, and the telescope 527 in Figure 18(b) is a telescope with a camera function.

[0079] In each of telescopes 520 and 527, an eyepiece 522, an intermediate lens 524, and an objective lens 523 are arranged in housing 528 in this order from the side closest to eye 529 of a user looking through telescope 520. Display device 521 is provided between eyepiece 522 and objective lens 523, specifically between eyepiece 522 and intermediate lens 524.

[0080] The display device 521 is a see-through type display device. Therefore, when the user looks into the telescope 520 or the telescope 527, the display device 521 is placed in front of the user's eyes 529. Even if the telescope 520 or 527 is turned off, the user can see the real image (object of observation) beyond the display device 521, just as when looking through a normal telescope. The user can also see the image displayed on the display device 521. The image displayed on the display device 521 is perceived as being superimposed on the real image. For example, when the user looks through the telescope 520 or 527 to look at a mountain, the user can see the real image of the mountain, and also see an image displayed on the display device 521 that shows information such as the name of the mountain and directions to the mountain.

[0081] A movable mirror 525 and an image sensor 526 are also arranged within a housing 528 of a telescope 527 (telescope with camera functionality) in FIG. 18(b). The image sensor 526 is, for example, a CMOS area sensor. When the movable mirror 525 is positioned so as not to obstruct the space between the objective lens 523 and the display device 521, the user can see both the real image (observation target) ahead of the display device 521 and the image displayed on the display device 521. When the movable mirror 525 is positioned so as to obstruct the space between the objective lens 523 and the display device 521 and direct light from the objective lens 523 to the image sensor 526, the observation target can be imaged using the image sensor 526. The image obtained by the image capture can be stored in a recording medium (capturing the observation target). The user can also view the image displayed on the display device 521. The user can operate the telescope 527 to switch between the real image and the image, or to capture the observation target. Note that a fixed half mirror may be used instead of the movable mirror 525.

[0082] (Transformation, modification, combination) The above-described embodiment is merely an example, and configurations obtained by appropriately modifying or changing the configuration of the above-described embodiment within the scope of the gist of the present invention are also included in the present invention. Similarly, the above-described usage example is merely an example, and configurations obtained by appropriately modifying or changing the configuration of the above-described usage example within the scope of the gist of the present invention are also included in the present invention. Configurations obtained by appropriately combining the configurations of the above-described embodiment and the above-described usage example are also included in the present invention. [Explanation of symbols]

[0083] 1~6,501,513,521:Display device 11R: Red light emitting section 11G: Green light emitting section 11B: Blue light emitting section 11T: Light transmitting section 20: First substrate 21: First semiconductor substrate 22: Metal wiring 23: Bonding metal wiring 24: Interlayer insulating film 25: Gate electrode 29: Light guide portion 41: Lower electrode 42: Organic EL film 43: Upper electrode 45R: Color filter

Claims

1. a first substrate having a first single-crystal semiconductor substrate on which a plurality of light-emitting units and a first drive circuit that drives the plurality of light-emitting units are provided; The first single-crystal semiconductor substrate has a plurality of light-transmitting light guide portions so as to realize a see-through function. A display device characterized by:

2. The plurality of light guide sections are disposed within a region in which the plurality of light emitting sections are disposed. The display device according to claim 1 .

3. the plurality of light-emitting units are arranged so that a plurality of pixels are arranged, with one or more light-emitting units as one pixel; The plurality of light guide sections are arranged so that the plurality of pixels correspond one-to-one to the plurality of light guide sections.

3. The display device according to claim 1 or 2.

4. The plurality of pixels are arranged such that one pixel is a combination of a light emitting section that emits red light, a light emitting section that emits green light, and a light emitting section that emits blue light. The display device according to claim 3 .

5. The pitch of the plurality of pixels is 30 μm or less.

5. The display device according to claim 3 or 4.

6. The pitch of the plurality of light guide portions is 30 μm or less. The display device according to any one of claims 1 to 5.

7. The plurality of light emitting units and the plurality of light guiding units are arranged in a square or delta configuration. The display device according to any one of claims 1 to 6.

8. When viewed from a direction perpendicular to a surface of the first substrate on which the plurality of light emitting units are provided, the light guiding unit is larger than the light emitting units. The display device according to any one of claims 1 to 7.

9. The thickness of the first single crystal semiconductor substrate is 2 μm or more and 30 μm or less. The display device according to any one of claims 1 to 8.

10. The first single crystal semiconductor substrate is a single crystal silicon substrate. The display device according to any one of claims 1 to 9.

11. Some of the light emitting units are disposed above the light guiding unit. The display device according to any one of claims 1 to 10.

12. When viewed from a direction perpendicular to a surface of the first substrate on which the plurality of light emitting portions are provided, the width of the light guiding portion is 2 μm or more and 28 μm or less. The display device according to any one of claims 1 to 11.

13. a second substrate having a second single-crystal semiconductor substrate on which a second drive circuit for driving the plurality of light-emitting units is provided; a surface of the first substrate opposite to a surface on which the plurality of light emitting units are provided, and the second substrate are pasted together, 13. The display device according to claim 1, wherein the second substrate also has a light guide portion that transmits light so as to realize the see-through function.

14. The second single crystal semiconductor substrate has one light guide section that covers the entire region in which the plurality of light emitting sections are arranged. The display device according to claim 13.

15. The display device according to claim 13 , wherein the second single-crystal semiconductor substrate has a plurality of light-guiding portions each extending over two or more light-emitting portions.

16. the plurality of light-emitting units are arranged so that a plurality of pixels are arranged, with one or more light-emitting units as one pixel; The second single-crystal semiconductor substrate has a plurality of light guide portions that correspond one-to-one to the plurality of pixels. The display device according to claim 13.

17. The light-emitting element further includes a transparent substrate bonded to a surface of the first substrate opposite to the surface on which the plurality of light-emitting portions are provided. The display device according to any one of claims 1 to 12.

18. The transparent substrate is bonded to the first substrate by metal bonding. The display device according to claim 17.

19. The transparent substrate is bonded to the first substrate by Si-SiO bonding. The display device according to claim 17.

20. The light emitting unit is a light emitting diode or an organic light emitting diode. The display device according to any one of claims 1 to 19.

21. a lens unit having the display device according to any one of claims 1 to 20; A frame that holds the lens part Glasses having:

22. an imaging sensor; A finder having the display device according to any one of claims 1 to 20; A camera having:

23. preparing a single-crystal semiconductor substrate provided with a drive circuit for driving a plurality of light-emitting units; forming a plurality of light-transmitting light guide portions on the single-crystal semiconductor substrate so as to realize a see-through function; forming the plurality of light emitting portions on the single crystal semiconductor substrate; A method for manufacturing a display device, comprising:

24. The method further includes a step of thinning the single crystal semiconductor substrate before the step of forming the plurality of light guiding portions on the single crystal semiconductor substrate. The method for manufacturing the display device according to claim 23.

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