Quantum dot integrated plate, its manufacturing method and display device including the same

Abstract

A quantum dot integrated plate, a manufacturing method thereof, and a display device including the same are disclosed. The quantum dot integrated plate includes a first optical transition layer (1), a first quantum dot layer (2), a second optical transition layer (3), and a second quantum dot layer (4) arranged in this order, and the refractive index of each layer is t 第1光遷移層 <t 第1量子ドット層 , t 第2光遷移層 <t 第1量子ドット層 , t 第2光遷移層 <t 第2量子ドット層 The first quantum dot layer (2) has a first microstructure pattern on a side close to the second optical transition layer (3), and the second quantum dot layer (4) has a second microstructure pattern on a side away from the second optical transition layer (3), the first quantum dot layer (2) includes a red quantum dot material, and the second quantum dot layer (4) includes a green quantum dot material. The brightness enhancement structure can be better utilized, the utilization rate of light can be improved, and the brightness value of the quantum dot board material can be improved while reducing the output of blue light.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to Chinese Patent Application No. 2021113169728, entitled "Quantum dot integrated plate, manufacturing method thereof, and display device including the same," filed with the State Intellectual Property Administration of China on November 9, 2021. [Technical Field]

[0002] The present application relates to the technical field of quantum dot optical plates, and more particularly to a quantum dot integrated plate, a manufacturing method thereof, and a display device including the same. [Background technology]

[0003] Quantum dot materials, characterized by their wide excitation spectrum, narrow emission spectrum, high color purity, and high optical stability, are widely used in displays, effectively improving the color gamut of devices and making device displays more vivid and vivid. Quantum dot integrated panels effectively apply the excellent optical performance of quantum dot materials to traditional backlit display systems, making quantum dot high-color-gamut display technology more affordable and widespread. However, during application, quantum dots are susceptible to water, oxygen, heat, and other elements, resulting in low stability. At the same time, differences in the backlighting of different LCD devices (commonly used TVs and computer displays are mainly direct-lit and edge-lit, while devices such as laptops, iPads, and mobile phones mainly use edge-lit displays) create different demands for quantum dot devices.

[0004] However, the conventional technology has at least the following drawbacks: (1) it requires a complex combination of optical board materials, optical films, and backlight light sources to realize the backlight light source required for televisions; (2) the light emitted by green quantum dots is absorbed by red quantum dots, which affects the luminous efficiency of the quantum dot board material, limiting the utilization rate of quantum dot materials for blue light; and (3) the assembly costs and film costs are high, resulting in high costs for using quantum dot light conversion films.

[0005] CN111393578A discloses a wide color gamut composite film including a brightness-enhancing layer and a diffusion layer. The brightness-enhancing layer includes two parts: a brightness-enhancing substrate layer, typically made of PET; and a rectangular prism structure with an isosceles trapezoidal cross section, closely arranged on the brightness-enhancing substrate layer. The rectangular prism is made of the high refractive index quantum dot UV-curable resin. The lower end of the rectangular prism, which has a larger area, is connected to the brightness-enhancing substrate layer, and the upper end, parallel to the brightness-enhancing substrate layer, is connected to the bottom of the diffusion layer. This patent application also discloses the addition of a sulfur-containing acrylate monomer to improve the refractive index of the resin itself and the coordination of sulfur with metal atoms on the surface of the quantum dots to improve the compatibility of the high refractive index UV-curable resin with the quantum dots and the stability of the quantum dots. The high refractive index UV-curable resin fabricates the oblique rectangular prism brightness-enhancing structures containing quantum dots, thereby achieving both brightness and color gamut enhancement. Furthermore, the side of the square pillar is connected to the bottom of the diffusion film, which results in higher adhesion, more integrated functions, and a thinner, lighter composite film with lower cost.

[0006] CN111650678A discloses a high-brightness quantum dot film comprising, in order from bottom to top, a lower substrate, a first structural layer, a second structural layer, and an upper substrate, wherein the upper end surface of the first structural layer and the lower end surface of the second structural layer are arranged in order as triangular prisms, and the first structural layer and the second structural layer are doped with two different color quantum dot materials, red and green, in a weight ratio of 1:1, respectively, and the refractive index of the first structural layer is greater than that of the second structural layer. By designing a prism structure to match the refractive index difference between the two micro-structured layers, the quantum dot film manufactured using this invention can achieve an optical light-condensing effect. When used in conjunction with a blue-light LED backlight module, it can improve the color saturation and brightness of the LCD screen, thereby achieving the goals of wide color gamut and energy conservation.

[0007] CN108303819A discloses a backlight and a manufacturing method thereof, a light guide plate and a manufacturing method thereof, and a display device, specifically, the refractive index t0 of a transparent adhesive satisfies t1≦t0≦t2, where t1 is the refractive index of the light guide plate and t2 is the refractive index of an optical film layer. By filling a transparent adhesive between the optical film layer and the light guide plate body and ensuring that the refractive index of the transparent adhesive is equal to or greater than the refractive index of the light guide plate and equal to or less than the refractive index of the optical film layer, light rays are always transmitted from an optically coarse medium to an optically dense medium during the process from the light guide plate to the optical film layer, which effectively prevents a portion of the light rays from being totally reflected during the transmission process and improves the light utilization rate.

[0008] The above-mentioned prior art combines the wide color gamut output characteristics of quantum dot films and is partly concerned with the design of the propagation path of light through each layer structure, but there is a need to further improve the light utilization rate and blue light blocking effect. Summary of the Invention [Problem to be solved by the invention]

[0009] In order to overcome the drawbacks of the prior art that further improvement in the brightness and blue light blocking effect of quantum dot optical plates is desired, the present application aims to provide a quantum dot integrated plate that can improve brightness while reducing blue light output and has a wide range of applications, a manufacturing method thereof, and a display device including the same. [Means for solving the problem]

[0010] In order to achieve the above object, a first aspect of the present invention includes a first optical transition layer, a first quantum dot layer, a second optical transition layer, and a second quantum dot layer, which are provided in this order, and the refractive index of each layer is t 第1光遷移層 <t 第1量子ドット層 , t 第2光遷移層 <t 第1量子ドット層 , t 第2光遷移層 <t 第2量子ドット層a first microstructure pattern is provided on a side of the first quantum dot layer that is close to the second optical transition layer, and a second microstructure pattern is provided on a side of the second quantum dot layer that is away from the second optical transition layer, wherein the first quantum dot layer contains a red quantum dot material and the second quantum dot layer contains a green quantum dot material.

[0011] Preferably, the outer surface of the first microstructured pattern and the outer surface of the second microstructured pattern are each independently plate-shaped, arc-shaped, or a combination of both.

[0012] Preferably, the first fine structure pattern and the second fine structure pattern each independently include a vertex, and the angle of the vertex is 45 to 135°.

[0013] Preferably, the first microstructure pattern and the second microstructure pattern each have a plurality of repeating units, and each repeating unit independently satisfies the maximum width of 10 to 100 μm and the maximum height of 2 to 120 μm.

[0014] More preferably, the repeating unit of the first microstructure pattern and / or the second microstructure pattern has a maximum width of 50 μm and a maximum height of 25 μm.

[0015] Preferably, the first microstructure pattern and the second microstructure pattern are each independently a prismatic structure.

[0016] Preferably, in the vertical propagation direction of the light beam, the included angle formed between the first microstructure pattern and the second microstructure pattern is 0 to 180°, preferably the included angle is 45 to 135°, and most preferably the included angle is 90°.

[0017] Preferably, the quantum dot integrating plate further includes a resin powder disposed in the first optical transition layer.

[0018] Preferably, the content of the resin powder in the first optical transition layer is 1 to 50 wt %.

[0019] Preferably, the material of the resin powder is the same as the base material of the first quantum dot layer.

[0020] Preferably, the resin powder has an average particle size of 1 to 100 μm.

[0021] Preferably, the thickness of the first optical transition layer and the second optical transition layer is independently 10 to 500 μm, preferably 10 to 200 μm, and the thickness of the first quantum dot layer and the second quantum dot layer is independently 0.05 to 1.5 mm.

[0022] A second aspect of the present application is Step (1) of producing a first quantum dot sheet and a second quantum dot sheet; (2) forming a first microstructure pattern and a second microstructure pattern on one side of the first quantum dot sheet and one side of the second quantum dot sheet, respectively; Step (3): measuring the refractive index of the first quantum dot sheet and the second quantum dot sheet, selecting a photocurable adhesive or a pressure-sensitive adhesive to form a first optical transition layer and a second optical transition layer, and applying the photocurable adhesive or the pressure-sensitive adhesive to the other side of the first quantum dot sheet and the other side of the second quantum dot sheet, respectively; and (4) joining the side of the first quantum dot sheet on which the first microstructure pattern is formed and the side of the second quantum dot sheet on which a photocurable adhesive or a pressure-sensitive adhesive is applied to form a quantum dot integrated plate in which the refraction of light is changeable.

[0023] Preferably, in step (1), the manufacturing of the first quantum dot sheet and the second quantum dot sheet each independently includes a step of mixing a quantum dot solution with a polymer material, followed by molding.

[0024] Preferably, in step (2), the first and second microstructure patterns are formed by pressing with a microstructure roller.

[0025] Preferably, the method further comprises the step of introducing a resin powder into the photocurable adhesive or pressure-sensitive adhesive applied to the first quantum dot sheet in step (3).

[0026] A third aspect of the present application provides a display device including the quantum dot integrated plate according to the first aspect.

[0027] Preferably, the display device comprises: a panel provided on the outside of the second quantum dot layer of the quantum dot integrating plate; The quantum dot integrated plate may further include a diffusion plate or a light guide plate provided on a side of the quantum dot integrated plate away from the panel.

[0028] Preferably, when the display device is in a direct backlight mode, the thicknesses of the first quantum dot layer and the second quantum dot layer in the quantum dot assembly plate are each independently 0.5 to 1.5 mm, and when the display device is in an edge-light backlight mode, the thicknesses of the first quantum dot layer and the second quantum dot layer in the quantum dot assembly plate are each independently 0.05 to 0.5 mm. [Effects of the Invention]

[0029] The present application, through the above structural design, provides an optical transition layer and designs the refractive index of each layer in the order of "small-large-small-large," thereby making better use of the microstructure of the quantum dot layer, improving or reducing the probability of light refraction and reflection, thereby improving the utilization rate of light rays and increasing the utilization rate of red and green quantum dot materials for blue light, thereby improving the brightness value of the quantum dot board material and reducing the output of blue light. Because of the sufficiently high brightness, when a display device is constructed using the quantum dot integrated board of the present application, there is no need for the diffusion film and brightness enhancement film used in conventional display device construction, significantly reducing the cost of optical films and assembly costs.

[0030] The manufacturing method of the present application is highly adaptable and simple, and can manufacture quantum dot integrated plates of different thicknesses according to different display devices, thereby increasing the application range of quantum dots. The quantum dot integrated plates can be used in edge-lit display devices and direct-lit display devices, and can be widely used in various device terminals such as televisions, computer monitors, laptops, pads, and mobile phones. [Brief explanation of the drawings]

[0031] [Figure 1] FIG. 1 is a front view of a specific embodiment of a quantum dot integrated plate according to the present application. [Figure 2] FIG. 2 is a side view of FIG. [Figure 3] 1 is a schematic diagram of light refraction in a microstructure pattern provided on a quantum dot integrated plate according to the present application. [Figure 4] This is a direct-type display device according to the present application. [Figure 5] 1 is an edge-lit display device according to the present application. [Explanation of symbols]

[0032] 1-1st optical transition layer 2-First quantum dot layer 3-Second optical transition layer 4-Second quantum dot layer 5-Resin Powder A-Quantum dot integrated plate 6-Panel 7-Diffuser 8-Light guide plate DETAILED DESCRIPTION OF THE INVENTION

[0033] The endpoints of ranges and any value disclosed herein are not limited to the exact range or value, and should be understood to include values close to these ranges or values. For ranges of numerical value, values between the endpoints of the ranges, between the endpoints of the ranges and the individual point values, and the individual point values can be combined with each other to form one or more new numerical ranges, and these numerical ranges should be considered to be specifically disclosed herein.

[0034] As described above, the first aspect of the present application provides a quantum dot integrated plate, which includes a first optical transition layer 1, a first quantum dot layer 2, a second optical transition layer 3, and a second quantum dot layer 4, which are arranged in this order, as shown in FIGS. 1 and 2. The refractive index of each layer is t 第1光遷移層 <t 第1量子ドット層 , t 第2光遷移層 <t 第1量子ドット層 , t 第2光遷移層 <t 第2量子ドット層 a first microstructure pattern is provided on a side of the first quantum dot layer 2 that is close to the second optical transition layer 3, and a second microstructure pattern is provided on a side of the second quantum dot layer 4 that is away from the second optical transition layer 3, the first quantum dot layer 2 including a red quantum dot material, and the second quantum dot layer 4 including a green quantum dot material.

[0035] During the course of research, the applicant of the present application discovered that by designing the structure of each of the above-mentioned layers of the present application, in particular by designing the refractive index of each layer in the order of "small-large-small-large" ("small" or "large" both refer to the refractive index of the adjacent layer), and by matching it with the microstructure pattern provided corresponding to the quantum dot layer containing red and green quantum dot materials, the brightness enhancement structure and the properties of the quantum dot material can be fully exhibited. Specifically, the first quantum dot layer 2 can fully exert its light-condensing effect in accordance with the first microstructure pattern formed thereon. When light rays are transmitted from the first quantum dot layer 2 to the second optical transition layer 1, they pass from an optically dense medium to an optically sparse medium, causing some of the light rays to be repeatedly reflected within the first quantum dot layer 2 and increasing the light utilization rate. At the same time, when light rays pass from the first optical transition layer 1 to the first quantum dot layer 2 and from the second optical transition layer 3 to the second quantum dot layer 4, they pass from an optically sparse medium to an optically dense medium, thereby reducing the light reflection phenomenon, increasing the amount of light entering the quantum dot layer, and reducing light loss. This regularity of refractive index change significantly improves the brightness of the quantum dot integrated plate.

[0036] On the other hand, in a quantum dot diffuser typically containing mixed red and green quantum dots, blue light simultaneously excites the red and green quantum dots, resulting in the emission of red and green light. However, the green light is absorbed by the red quantum dots and used to excite the red quantum dot material, preventing the green quantum dots from achieving their full potential. Therefore, to achieve the same effect, more green quantum dots and blue light must be used. Meanwhile, in prior art, blue light typically passes directly through the quantum dot diffuser, eliminating the blue light recycling process in the first and second quantum dot sheets, resulting in a low utilization rate of blue light and a large amount of blue light passing through the quantum dot diffuser. In the quantum dot integrated plate of the present application, blue light first passes through the first quantum dot sheet containing red quantum dots, and its propagation path transitions from an optically dense medium to an optically sparse medium. As a result, some of the blue light is repeatedly reflected within the first quantum dot sheet, allowing the blue light to fully excite the red quantum dots. When blue and red light enter the second quantum dot sheet containing green quantum dots, some of the blue and red light is repeatedly reflected within the second quantum dot sheet, and the red light does not excite the green quantum dots. Therefore, the blue light can fully excite the green quantum dots, thereby maximizing the performance of the green quantum dots, improving the utilization rate of blue light, and significantly reducing the output of blue light.

[0037] In the present application, the red quantum dot material and the green quantum dot material are both conventional quantum dot materials, which may be commercially available or may be prepared by conventional methods, and therefore, the description thereof will be omitted here.

[0038] In this application, the "optical transition layer" may be understood to be a gradient transition layer in which the refractive index of light changes, and its function is to increase the transmittance of light and reduce the light reflection phenomenon caused by the difference in refractive index at the bonding point of the side of the quantum dot layer, and to increase the angle change of light in the optical transition layer, thereby achieving a certain diffusion and atomization effect on the light.

[0039] The present application does not specifically limit the materials of the first optical transition layer 1 and the second optical transition layer 3, as long as they satisfy the above-mentioned specific refractive index and are applicable to optical plates. Non-limiting examples of the substrate of the optical transition layer may be selected from PMMA, PET, PC, MS, PP, PS, and PE.

[0040] In the present application, the specific selection of the refractive index of each layer may be any as long as it satisfies the above-mentioned refractive index rules and is advantageous for improving brightness and reducing blue light output. For example, preferably, the refractive indexes of the first quantum dot layer 2 and the second quantum dot layer 4 are each independently 1.3 to 1.7, and the refractive indexes of the first optical transition layer 1 and the second optical transition layer 3 are each independently 1 to 1.6, so that the above-mentioned refractive index rules are simultaneously satisfied.

[0041] The refractive indexes of the first quantum dot layer 2 and the second quantum dot layer 4 may be the same or different. The refractive indexes of the first optical transition layer 1 and the second optical transition layer 3 may be the same or different.

[0042] In the present application, the term "microstructure pattern" refers to a structure pattern having a micrometer size, which has a light-condensing effect on light rays. Specifically, for example, it may include four situations a to d of light ray propagation from left to right as shown in FIG. 3, and a) is a pattern that causes light rays to be totally internally reflected (TIR) as much as possible. + , for example, total reflection within the microstructure units in the same microstructure pattern), a) increase the amount of light that can be refracted, c) reduce the rate of light loss, and d) reuse the refracted light (for example, refracted by one microstructure unit and then re-used by entering the next microstructure unit). This allows some light rays to be repeatedly reflected within the corresponding quantum dot layer, improving the utilization rate of light rays and ensuring improved brightness while reducing the output of blue light.

[0043] In the present application, the specific shape of the microstructure pattern can be selected from a wide range of options, and may be, for example, a plate-like shape (e.g., a prism), an arc-like shape (e.g., a sphere or an ellipsoid), or a combination thereof, as long as it is advantageous for improving brightness and reducing blue light output.

[0044] More preferably, the first microstructure pattern and the second microstructure pattern each independently include a vertex, and the vertex has an angle of 45 to 135°. This preferred solution is advantageous for multi-level recycling of light refracted at adjacent interfaces, thereby improving brightness and reducing blue light output.

[0045] In this application, the angle of a vertex refers to the maximum angle at which the vertex is located. Note that the vertex may be formed by at least two flat surfaces, at least one arcuate surface, or a combination of multiple flat surfaces and multiple arcuate surfaces, and the angle of the vertex refers to the maximum angle between any two surfaces that form the same vertex. For example, when the vertex is formed by one arcuate surface, the angle of the vertex is a taper angle.

[0046] More preferably, the angle of the vertex of the second microstructure pattern is 70 to 110°, even more preferably 80 to 100°, and even more preferably 90°. This preferred solution is advantageous for improving brightness by multiple reflection or refraction of light rays, and for blue light to return to the second quantum dot layer through maximum reflection or refraction to act on the quantum dot material.

[0047] In a preferred embodiment of the present application, the first microstructure pattern and the second microstructure pattern each have a plurality of repeating units, and each repeating unit independently satisfies the following requirements: a maximum width of 10 to 100 μm and a maximum height of 2 to 120 μm.

[0048] Those skilled in the art can select the respective sizes of the corresponding repeating units of the first microstructure pattern and the second microstructure pattern from the viewpoint of improving brightness and blocking blue light.

[0049] More preferably, the repeating unit of the first microstructure pattern and / or the second microstructure pattern has a maximum width of 10 to 100 μm, even more preferably 50 μm, and a maximum height of 10 to 70 μm, even more preferably 25 μm. This preferred solution is advantageous for improving brightness through multiple reflection or refraction of light rays, and for blue light to return to the second quantum dot layer through maximum reflection or refraction to act on the quantum dot material.

[0050] According to the present application, preferably, the first microstructure pattern and the second microstructure pattern are each independently a prism structure, the cross section of which is shown in FIG. 3, and the refraction and reflection states thereof are shown in the direction of the arrows in FIG. 3.

[0051] The first and second microstructured patterns may be the same or different.

[0052] Preferably, the angle formed between the first microstructure pattern and the second microstructure pattern in the vertical propagation direction of light (also referred to as the angle between the two microstructures) is 0 to 180°, preferably 45 to 135°, and most preferably 90°. This preferred solution is advantageous for improving the utilization efficiency of light and reducing blue light.

[0053] In this application, the "angle formed by the first microstructure pattern and the second microstructure pattern in the vertical propagation direction of a light ray" refers to the angle between a corresponding surface of the first microstructure pattern in the vertical direction and a corresponding surface of the second microstructure pattern in the vertical direction (or a surface on which an extension line of the surface is located) in the same vertical direction in which a light ray propagates. Note that the "surface" here means a flat surface or an arc surface.

[0054] 1 and 2, the quantum dot integrating plate preferably further includes a resin powder 5 disposed within the first optical transition layer 1. In this preferred solution, the resin powder 5 forms a certain roughness on the light incident surface of the first optical transition layer 1. The roughened light incident surface of the first optical transition layer 1 can reduce specular reflection and increase the amount of incident light, which is advantageous for improving the brightness of the quantum dot integrating plate and the utilization rate of the red and green quantum dot materials for blue light. Meanwhile, when more blue light passes through the first optical transition layer 1 and enters the first quantum dot layer 2, the difference between the refractive index of the resin powder 5 and the refractive index of the adhesive changes the propagation angle of the light, causing the light to diverge at multiple angles, thereby achieving the effects of uniforming and diverging the light.

[0055] The resin powder 5 is dispersed in the first optical transition layer 1, preferably uniformly, which is advantageous for uniformizing the light beam and promoting the use of multiple directions.

[0056] Preferably, the content of the resin powder 5 in the first optical transition layer is 1 to 50 wt %.

[0057] Preferably, the material of the resin powder 5 is the same as the base material of the first quantum dot layer 2. This preferred solution is advantageous for fully exerting the brightness enhancement structure, and the refractive index change is more excellent.

[0058] Those skilled in the art can select the particle size of the resin powder depending on the brightness and the propagation state of blue light. Preferably, the average particle size of the resin powder 5 is 1 to 100 μm.

[0059] In this application, "average particle size" means the average diameter.

[0060] According to the present application, the thickness of the first optical transition layer 1 and the second optical transition layer 3 is preferably 10 to 500 μm, more preferably 10 to 200 μm, and further preferably 10 to 100 μm, independently of each other.

[0061] Preferably, the thickness of the first quantum dot layer 2 and the second quantum dot layer 4 is independently 0.05 to 1.5 mm.

[0062] Those skilled in the art can select the substrates of the first quantum dot layer 2 and the second quantum dot layer 4 according to the actual situation. Preferably, the first quantum dot layer 2 further includes a first polymer material, and the second quantum dot layer 4 further includes a second polymer material.

[0063] The first polymeric material and the second polymeric material may be the same or different, but are preferably the same. The present application does not limit the specific type of the polymeric material, and may be a polymeric material applicable to conventional optical plates in this field. For example, the polymeric material may be a resin material such as PE, PS, PMMA, PC, MS, PET, or PP.

[0064] In the corresponding quantum dot layers of the present application, those skilled in the art can select the ratio of the quantum dot material contained therein to the corresponding polymer material according to actual needs. For example, in the first quantum dot layer 2, the weight ratio of the red quantum dot material to the first polymer material may be 1:100 to 10,000. For example, in the second quantum dot layer 4, the weight ratio of the blue quantum dot material to the second polymer material may be 1:100 to 10,000.

[0065] A second aspect of the present application is Step (1) of producing a first quantum dot sheet and a second quantum dot sheet; (2) forming a first microstructure pattern and a second microstructure pattern on one side of the first quantum dot sheet and one side of the second quantum dot sheet, respectively; Step (3): measuring the refractive index of the first quantum dot sheet and the second quantum dot sheet, selecting a photocurable adhesive or a pressure-sensitive adhesive to form a first optical transition layer 1 and a second optical transition layer 3, and applying the photocurable adhesive or the pressure-sensitive adhesive to the other side of the first quantum dot sheet and the other side of the second quantum dot sheet, respectively; and (4) joining the side of the first quantum dot sheet on which the first microstructure pattern is formed and the side of the second quantum dot sheet on which a photocurable adhesive or a pressure-sensitive adhesive is applied to form a quantum dot integrated plate in which the refraction of light is changeable.

[0066] The manufacturing method of the present application uses a photo-curable adhesive or a pressure-sensitive adhesive to form the first optical transition layer 1 and the second optical transition layer 3, which can work synergistically with a specific refractive index design and microstructure pattern design, thereby maximizing the brightness enhancement effect of light and the utilization effect of quantum dots on blue light in the manufactured quantum dot integrated plate, and also better improving the color gamut and reducing the output of blue light in accordance with the photoeffect properties of the quantum dot material.

[0067] In step (1), those skilled in the art can select conventional methods to manufacture the quantum dot layer as needed.

[0068] In a preferred embodiment, the first quantum dot sheet and the second quantum dot sheet are produced independently of each other by mixing a quantum dot solution with a polymer material and then molding the mixture.

[0069] In step (1), in the production of the first quantum dot sheet, the corresponding quantum dot solution is a solution containing a red quantum dot material, and in the production of the second quantum dot sheet, the corresponding quantum dot solution is a solution containing a green quantum dot material. The production of these solutions is well known to those skilled in the art, and therefore, the description thereof will be omitted here.

[0070] In the manufacture of the first quantum dot sheet and the second quantum dot sheet, the corresponding polymer materials are the first polymer material and the second polymer material, respectively.

[0071] According to the present application, the specific process of the above-mentioned molding process includes molding methods and process parameters, which can be selected by those skilled in the art according to actual needs, and preferably, the molding process is extrusion molding, and the extrusion molding device can be a screw extruder.

[0072] More preferably, the extrusion is carried out at a temperature of 120 to 300°C.

[0073] In step (1) of the present invention, the mixed material is stretched into a quantum dot sheet by the molding process to form the first quantum dot layer 2 and the second quantum dot layer 4.

[0074] In step (2) of the present application, the first and second microstructure patterns can be formed by any conventional method as known to those skilled in the art, for example, by direct inkjet printing, roll molding, additive manufacturing, etc.

[0075] Preferably, the first and second microstructured patterns are formed by pressing with a microstructured roller, which makes the process simple and efficient.

[0076] The pressing conditions of the microstructure roller may be any conditions that allow the formation of a microstructure. For example, the formation of the microstructure roller by pressing is carried out under high temperature conditions.

[0077] In step (3) of the present invention, the refractive indexes of the first quantum dot sheet and the second quantum dot sheet are measured according to the refractive index requirements, and a photo-curable adhesive or a pressure-sensitive adhesive is selected and applied to the other side of the first quantum dot sheet and the other side of the second quantum dot sheet, where the microstructure pattern and the applied adhesive are located on both sides of the quantum dot sheet, respectively.

[0078] The adhesive applied to the quantum dot sheet may be photocured (preferably UV cured) or pressed in an appropriate step to form a solid optical transition layer, depending on the need for subsequent layer bonding, as long as it can ultimately form the first optical transition layer 1 and the second optical transition layer 3. For example, if there is no need to later bond another layer to the applied adhesive, photocuring or pressing can be performed in step (3), and if there is a need to subsequently bond another layer, photocuring or pressing can be performed after bonding in a later step.

[0079] Preferably, the method further comprises the step of incorporating a resin powder 5 into the photocurable adhesive or pressure-sensitive adhesive applied to the first quantum dot sheet in step (3).

[0080] It should be understood that the resin powder 5 is mixed into the light-curable adhesive or pressure-sensitive adhesive.

[0081] In step (4) of the present application, "bonding the side of the first quantum dot sheet on which the first microstructure pattern is formed to the side of the second quantum dot sheet on which the photocurable adhesive or pressure-sensitive adhesive is applied" means bonding the surface of the first microstructure pattern on the first quantum dot sheet to the surface of the adhesive on the second quantum dot sheet. After the bonding, a second optical transition layer 3 is formed between the first quantum dot sheet and the second quantum dot sheet through photocuring or pressure bonding.

[0082] It should be understood that in the present application, the amount of each raw material used should be such that it satisfies the structure and composition of each layer. The structure and composition of each layer are the same as those in the first embodiment, and therefore a description thereof will be omitted here.

[0083] A third aspect of the present application provides a display device including the quantum dot integrated plate according to the first aspect.

[0084] The quantum dot integrated plate according to the present application can be applied to any type of conventional module, including, but not limited to, a conventional direct-type module (which generally comprises a panel 6, a brightness enhancement film, a diffusion film, and a diffusion plate 7) and a conventional edge-lit display device (which generally comprises a panel 6, a brightness enhancement film, a diffusion film, and a light guide plate 8). The quantum dot integrated plate according to the present application can improve brightness and block blue light, and when used in a module, it eliminates the need for multiple components for improving brightness and blocking blue light, thereby reducing the cost of the optical film and the assembly cost.

[0085] In a preferred embodiment, the display device is in a direct backlight mode, as shown in FIG. a panel 6 provided on the outer side of the second quantum dot layer 4 of the quantum dot assembly plate A; and a diffusion plate 7 provided on the quantum dot integrating plate A on the side away from the panel 6.

[0086] More preferably, the thickness of the first quantum dot layer and the second quantum dot layer in the quantum dot assembly plate A is independently 0.5 to 1.5 mm.

[0087] In another preferred embodiment, the display device is in an edge-lit backlight mode, as shown in FIG. a panel 6 provided on the outer side of the second quantum dot layer 4 of the quantum dot assembly plate A; and a light guide plate 8 provided on the quantum dot integrating plate A on the side away from the panel 6.

[0088] More preferably, the thickness of the first quantum dot layer and the second quantum dot layer in the quantum dot assembly plate A is independently 0.05 to 0.5 mm.

[0089] In the present application, there is no limitation on the specific type of the panel 6, and it may be, for example, a liquid crystal panel.

[0090] The present invention will now be described in more detail with reference to examples.

[0091] Example 1 The quantum dot integrated plate includes, in order, a first optical transition layer 1, a PS first quantum dot layer 2, a second optical transition layer 3, and a PS second quantum dot layer 4. The first optical transition layer 1 is located below the first quantum dot layer 2, and the second optical transition layer 3 is located between the first quantum dot layer 2 and the second quantum dot layer 4. Both the first optical transition layer 1 and the second optical transition layer 3 are formed by curing an acrylic resin adhesive.

[0092] A specific method for manufacturing the quantum dot assembly plate includes the following steps (1) to (3).

[0093] (1) The red and green quantum dot solutions are mixed with the polymer PS, respectively, and then extruded at 200°C using a screw extruder to form a quantum dot sheet. A microstructured roller is used to press a microstructured pattern onto one side of the sheet, producing a first quantum dot sheet containing red quantum dot material and a second quantum dot sheet containing green quantum dot material. This results in a first quantum dot layer 2 having a first microstructured pattern and a second quantum dot layer 4 having a second microstructured pattern.

[0094] (2) An ultraviolet-curable adhesive is applied to the rear surface of the microstructure of the first quantum dot sheet, and after curing with ultraviolet light, the first optical transition layer 1 is formed on the first quantum dot sheet.

[0095] (3) Apply an ultraviolet-curable adhesive to the microstructured back surface of the second quantum dot sheet, then bond the microstructured surface of the first quantum dot sheet and the microstructured back surface of the second quantum dot sheet with the applied ultraviolet-curable adhesive, and harden it with ultraviolet light. Then, form a second optical transition layer 3 between the first quantum dot sheet and the second quantum dot sheet, and finally produce a quantum dot integrated plate.

[0096] The first optical transition layer 1 has a refractive index of 1.49 and a thickness of 200 μm, the first quantum dot layer 2 has a refractive index of 1.52 and a thickness of 0.5 mm, the second optical transition layer 3 has a refractive index of 1.49 and a thickness of 200 μm, and the second quantum dot layer 4 has a refractive index of 1.52 and a thickness of 0.5 mm. The first and second microstructure patterns are both prism structures, and the repeating units of the microstructure patterns of the first quantum dot layer 2 and the second quantum dot layer 4 both have an apex angle of 45° and a maximum height of 120 μm, and the included angle between the first and second microstructure patterns in the vertical propagation direction of the light beam is 0°.

[0097] The quantum dot integrated plate manufactured in the example was placed in a direct-type display device with the same blue light power, and a blue light illuminance meter and a color analyzer were placed in the center of the board material to measure the blue light intensity and brightness.The blue light intensity and brightness of the original model optical plate were also measured and compared.

[0098] The original model optical plate is composed of a PET light-diffusing layer, a PS red and green quantum dot layer, and a PET brightness-enhancing layer stacked in sequence. The refractive index of the light-diffusing layer is 1.59, the refractive index of the quantum dot layer is 1.52, and the refractive index of the brightness-enhancing layer is 1.59.

[0099] The measured brightness and blue light intensity data were compared with the original model and found to have a 2.56% improvement in brightness and a 2.11% decrease in blue light intensity.

[0100] Example 2 This differs from the quantum dot assembly plate of Example 1 in that the maximum height of the second microstructure pattern is 25 μm.

[0101] The measured brightness and blue light intensity data were compared with the original model and found to have a 6.05% improvement in brightness and a 5.15% decrease in blue light intensity.

[0102] Example 3 This differs from the quantum dot assembly plate of Example 1 in that the maximum height of the second microstructure pattern is 2 μm.

[0103] The measured luminance and blue light intensity data were compared with the original model and found to be 2.48% brighter and 2.75% darker.

[0104] Example 4 This differs from the quantum dot assembly plate of Example 1 in that the maximum height of the first microstructure pattern is 25 μm.

[0105] The measured brightness and blue light intensity data were compared with the original model and found to have a 5.55% improvement in brightness and a 4.42% decrease in blue light intensity.

[0106] Example 5 This differs from the quantum dot assembly plate of Example 4 in that the maximum height of the second microstructure pattern is 25 μm.

[0107] The measured brightness and blue light intensity data were compared with the original model and found to have a 9.41% improvement in brightness and an 8.34% decrease in blue light intensity.

[0108] Example 6 This differs from the quantum dot assembly plate of Example 4 in that the maximum height of the second microstructure pattern is 2 μm.

[0109] The measured brightness and blue light intensity data were compared with the original model and found to be 4.29% brighter and 4.01% darker.

[0110] Example 7 This differs from the quantum dot assembly plate of Example 1 in that the maximum height of the first microstructure pattern is 2 μm.

[0111] The measured brightness and blue light intensity data were compared with the original model and found to be 2.01% brighter and 2.98% darker.

[0112] Example 8 This differs from the quantum dot assembly plate of Example 7 in that the maximum height of the second microstructure pattern is 25 μm.

[0113] The measured brightness and blue light intensity data were compared with the original model and found to have a 6.49% improvement in brightness and a 5.25% decrease in blue light intensity.

[0114] Example 9 This differs from the quantum dot assembly plate of Example 7 in that the maximum height of the second microstructure pattern is 2 μm.

[0115] The measured brightness and blue light intensity data were compared with the original model and found to be 2.62% brighter and 2.01% darker.

[0116] Example 10 This differs from the quantum dot assembly plate of Example 5 in that the angle formed between the first microstructure pattern and the second microstructure pattern in the vertical propagation direction of the light beam is 90°.

[0117] The measured brightness and blue light intensity data were compared with the original model and found to be 13.49% brighter and 11.25% darker.

[0118] Example 11 This differs from the quantum dot assembly plate of Example 10 in that the angle formed between the first microstructure pattern and the second microstructure pattern in the vertical propagation direction of the light beam is 180°.

[0119] The measured brightness and blue light intensity data were compared with the original model and found to have a 9.62% improvement in brightness and a 9.01% decrease in blue light intensity.

[0120] Example 12 This differs from the quantum dot integrated plate of Example 10 in that PS resin powder 5 is mixed into the first optical transition layer 1, the average particle size of the resin powder is 1 μm, and the amount of resin powder added to the first optical transition layer is 5 wt%.

[0121] The measured brightness and blue light intensity data were compared with the original model and found to have a 15.19% improvement in brightness and a 13.89% decrease in blue light intensity.

[0122] Example 13 This differs from the quantum dot assembly board of Example 12 in that the amount of resin powder added to the first optical transition layer is 50 wt %.

[0123] The measured luminance and blue light intensity data were compared with the original model and found to be 17.40% brighter and 14.45% darker.

[0124] Example 14 This differs from the quantum dot assembly plate of Example 12 in that the average particle size of the resin powder is 100 μm.

[0125] The measured brightness and blue light intensity data were compared with the original model and found to be 15.77% brighter and 13.66% darker.

[0126] Example 15 This differs from the quantum dot integrated plate of Example 5 in that PS resin powder 5 is mixed into the first optical transition layer 1, the average particle size of the resin powder is 100 μm, and the amount of resin powder added to the first optical transition layer is 50 wt %.

[0127] The measured brightness and blue light intensity data were compared with the original model and found to be 17.01% brighter and 14.88% darker.

[0128] (Comparative Example 1) It differs from the quantum dot integrated plate of Example 1 in that the refractive index of each layer is different, with the refractive index of the first optical transition layer 1 and the second optical transition layer 3 (both 1.57) being higher than the refractive index of the first quantum dot layer 2 and the second quantum dot layer 4 (both 1.52).

[0129] The measured luminance and blue light intensity data were compared with the original model and found to be reduced by 3.69% in luminance and 1.17% in blue light intensity.

[0130] (Comparative Example 2) This differs from the quantum dot assembly plate of Example 1 in that the first and second fine structure patterns are not provided.

[0131] The measured luminance and blue light intensity data were compared with the original model and found to be reduced by 1.88% in luminance and 1.98% in blue light intensity.

[0132] As can be seen from the above examples and comparative examples, the quantum dot integrated plate having the specific structure of the present application, particularly the specific refractive index change and microstructure design, has a significant effect in terms of improving brightness and reducing blue light output.

[0133] Furthermore, as can be seen from multiple comparisons between Example 2 and Example 1 and Example 3, Example 5 and Example 4 and Example 6, and Example 8 and Example 7 and Example 9, if the maximum height of the first microstructure pattern or the second microstructure pattern is too large or too small, the improvement in brightness is relatively small, and the decrease in blue light intensity is relatively small. This is because if the maximum height of the first microstructure pattern or the second microstructure pattern is too large or too small, it is unfavorable for the light ray to be maximally reflected or refracted to return to the second quantum dot layer, which is unfavorable for the improvement in brightness, and it is unfavorable for the blue light to be maximally reflected or refracted to return to the second quantum dot layer and interact with the blue light quantum dots, which is unfavorable for the maximum utilization of the blue light.

[0134] Furthermore, as can be seen from the comparison between Example 10 and Example 11, the use of the preferred specific microstructure distribution solution of the present application can further improve brightness and reduce blue light output, because the two microstructure patterns form an appropriate angle, which can promote multi-level utilization of light rays and fully utilize the properties of the quantum dot material and its interaction with blue light.

[0135] Furthermore, as can be seen from the comparison between Example 10 and Example 12, the preferred solution of adding resin powder 5 of the present invention can further improve brightness and reduce blue light output. This is because resin powder 5 can reduce the specular reflection phenomenon of the first optical transition layer 1 and increase the amount of blue light entering, while also further changing the refractive index within the first optical transition layer 1, promoting the multi-angle and multi-directional divergence of light rays when they enter the first quantum dot layer 2.

[0136] Furthermore, as can be seen from the comparison of Example 12 with Examples 13 and 14, and the comparison of Example 5 with Example 15, increasing the amount of resin powder 5 added is advantageous for improving brightness and reducing blue light output, and increasing the average particle size is advantageous for improving brightness.

Claims

1. The optical waveguide includes a first optical transition layer, a first quantum dot layer, a second optical transition layer, and a second quantum dot layer, which are arranged in this order, and the refractive index of each layer is t 第１光遷移層 <t 第１量子ドット層 , t 第２光遷移層 <t 第１量子ドット層 , t 第２光遷移層 <t 第２量子ドット層 a first microstructure pattern is provided on a side of the first quantum dot layer that is close to the second optical transition layer, and a second microstructure pattern is provided on a side of the second quantum dot layer that is away from the second optical transition layer, the first quantum dot layer including a red quantum dot material, and the second quantum dot layer including a green quantum dot material; A quantum dot assembly plate characterized in that the first microstructure pattern and the second microstructure pattern each have a plurality of repeating units, and each of the repeating units independently satisfies the following requirements: a maximum width of 10 to 100 μm and a maximum height of 2 to 120 μm.

2. The quantum dot integrating plate according to claim 1 , wherein the outer surface of the first microstructure pattern and the outer surface of the second microstructure pattern are each independently plate-shaped, arc-shaped, or a combination of both.

3. The quantum dot assembly plate of claim 1, wherein the first microstructure pattern and the second microstructure pattern each independently include a vertex, and the vertex has an angle of 45 to 135°.

4. The quantum dot integrating plate according to claim 1 , wherein the repeating units of the first microstructure pattern and / or the second microstructure pattern each independently satisfy the following conditions: a maximum width of 50 μm and a maximum height of 25 μm.

5. The quantum dot assembler according to claim 1 , wherein the first microstructure pattern and the second microstructure pattern are each independently a prism structure.

6. 2. The quantum dot integrating plate according to claim 1, wherein the angle formed between the first microstructure pattern and the second microstructure pattern in the vertical propagation direction of a light beam is 0 to 180 degrees.

7. 7. The quantum dot integrating plate according to claim 6, wherein the included angle is 45 to 135 degrees.

8. The quantum dot integrating plate according to claim 7 , wherein the included angle is 90°.

9. The quantum dot integrating plate according to claim 1 , further comprising a resin powder disposed in the first optical transition layer.

10. 10. The quantum dot integrating plate according to claim 9, wherein the content of the resin powder in the first optical transition layer is 1 to 50 wt %.

11. The quantum dot integrating plate according to claim 9 , wherein the material of the resin powder is the same as that of the base material of the first quantum dot layer.

12. 10. The quantum dot assembly board according to claim 9, wherein the resin powder has an average particle size of 1 to 100 μm.

13. 2. The quantum dot integrating plate according to claim 1, wherein the thicknesses of the first optical transition layer and the second optical transition layer are each independently 10 to 500 μm, and the thicknesses of the first quantum dot layer and the second quantum dot layer are each independently 0.05 to 1.5 mm.

14. 14. The quantum dot integrating plate according to claim 13, wherein the thickness of the first optical transition layer and the second optical transition layer is independently 10 to 200 μm.

15. A method for manufacturing a quantum dot integrated plate according to any one of claims 1 to 14, Step (1) of producing a first quantum dot sheet and a second quantum dot sheet; (2) forming a first microstructure pattern and a second microstructure pattern on one side of the first quantum dot sheet and one side of the second quantum dot sheet, respectively; Step (3): measuring the refractive index of the first quantum dot sheet and the second quantum dot sheet, selecting a photocurable adhesive or a pressure-sensitive adhesive to form a first optical transition layer and a second optical transition layer, and applying the photocurable adhesive or the pressure-sensitive adhesive to the other side of the first quantum dot sheet and the other side of the second quantum dot sheet, respectively; and (4) joining the side of the first quantum dot sheet on which the first microstructure pattern is formed and the side of the second quantum dot sheet on which a photocurable adhesive or a pressure-sensitive adhesive is applied to form a quantum dot integrated plate in which the refraction of light changes.

16. In step (1), the first quantum dot sheet and the second quantum dot sheet are produced independently of each other by mixing a quantum dot solution with a polymer material and then molding the mixture; 16. The method for manufacturing a quantum dot assemble plate according to claim 15, wherein in step (2), the first and second microstructure patterns are formed by pressing with a microstructure roller.

17. 16. The method for manufacturing a quantum dot integrating plate according to claim 15, further comprising the step of introducing a resin powder into the photocurable adhesive or pressure-sensitive adhesive applied to the first quantum dot sheet in step (3).

18. A display device comprising the quantum dot integrated plate according to any one of claims 1 to 14.

19. a panel provided on the outside of the second quantum dot layer of the quantum dot integrating plate; The display device according to claim 18 , further comprising a diffusion plate or a light guide plate provided on a side of the quantum dot integrating plate away from the panel.

20. 19. The display device of claim 18, wherein when the display device is in a direct backlight mode, the thicknesses of the first quantum dot layer and the second quantum dot layer in the quantum dot integrating plate are each independently 0.5 to 1.5 mm, and when the display device is in an edge-lit backlight mode, the thicknesses of the first quantum dot layer and the second quantum dot layer in the quantum dot integrating plate are each independently 0.05 to 0.5 mm.

Images