Photoacid generator, curable composition and resist composition

A sulfonylimide salt compound-based photoacid generator addresses the issues of low photosensitivity and stability in existing photoresists, providing enhanced performance and pattern quality in chemically amplified photoresists.

JP7727580B2Active Publication Date: 2025-08-21SAN APRO LTD
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Patent Information

Application Number
JP2022049621
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-04-02
Filing Date
2022-03-25
Publication Date
2025-08-21
Estimated Expiration
2042-03-25

AI Technical Summary

Technical Problem

Existing photoacid generators, such as sulfonium salts, suffer from low photosensitivity to i-line and poor pattern shapes in chemically amplified photoresists, and contain metal elements that are hazardous or act as impurities, affecting transistor performance.

Method used

A photoacid generator containing a sulfonylimide salt compound, represented by specific sulfonium cations, is developed to enhance photosensitivity to i-line and improve storage stability when blended with cationically polymerizable compounds.

Benefits of technology

The sulfonylimide salt compound exhibits high photosensitivity to active energy rays, excellent compatibility with solvents and cationically polymerizable compounds, and produces high-quality resist patterns with improved storage stability, enabling efficient pattern formation with lower exposure doses.

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Patent Text Reader

Abstract

To provide: a new photoacid generator containing a sulfonylimide salt compound which has high photosensitivity to the i-line and has excellent storage stability in a composition with a cationic polymerizable compound such as an epoxy compound; and an energy ray curable composition, a chemically amplified positive photoresist composition and a chemically amplified negative photoresist composition that contain the photoacid generator.SOLUTION: The photoacid generator contains a sulfonylimide salt compound represented by the general formula (1) in the figure. [In the formula (1), X+ is a sulfonium cation represented by the general formula (2), (3), (4), (5) or (6).]SELECTED DRAWING: None
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Citation Information

Patent Citations

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  • Perfluoroalkane-1-sulfonyl(perfluoroalkylsulfonyl)imide-n-sulfonyl-containing methanides, methods for preparing imide and sulfonate compounds, and perfluoroalkane-1-n-sulfonyl bis(perfluoroalkylsulfonyl)methanide compounds

    JP2001512714A

  • Photosensitive composition and method for forming pattern by using the same

    JP2005275153A

  • Positive resist composition and pattern forming method using the same

    JP2007114719A

  • Radiation sensitive acid generator for liquid immersion lithography, method for producing the same, radiation sensitive resin composition for liquid immersion lithography, and resist pattern forming method

    JP2008089777A