Battery

Abstract

To provide a semiconductor device in which a circuit and a storage element are efficiently accommodated.SOLUTION: A semiconductor device includes a first transistor, a second transistor, and an electric double layer capacitor. The first transistor, the second transistor, and the electric double layer capacitor are provided on one substrate. A semiconductor forming the channel region of the second transistor is wider in forbidden band width than a semiconductor forming the channel region of the first transistor. An electric double layer capacitor has a solid electrolyte.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a semiconductor device and an electronic device.

[0002] Alternatively, one aspect of the present invention relates to an article, a method, or a manufacturing method. Alternatively, the present invention relates to a process , machine, manufacture, or composition of matter. Another embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, The present invention relates to a method for driving or manufacturing such devices.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. The display device, electro-optical device, semiconductor circuit, and electronic device all have semiconductor devices. There are cases where this happens. [Background technology]

[0004] In recent years, electronic devices that are carried by users or worn by users have been actively developed. .

[0005] The electronic devices carried by the user or worn by the user operate using the power storage device as a power source. In particular, the power consumption is kept to a minimum in electronic devices that use a CPU (Central Processor). If the CPU contains a DIMM, it will consume more power during operation. Therefore, CPU processing has a significant impact on power consumption.

[0006] A plastic or plastic film substrate with a highly functional integrated circuit (such as a CPU) Patent Document 1 describes a semiconductor device that transmits and receives power or signals wirelessly.

[0007] In addition, the CPU register is fabricated using a memory circuit that uses oxide semiconductor transistors. A semiconductor device that reduces power consumption is described in Patent Document 2.

[0008] In addition, electric double layer capacitors (EDLCs) using solid electrolytes A technology for fabricating a ble-layer capacitor has been proposed (Patent Document 3). [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-32927 [Patent Document 2] Japanese Patent Application Laid-Open No. 2013-251884 [Patent Document 3] Japanese Patent Application Laid-Open No. 2013-191769 Summary of the Invention [Problem to be solved by the invention]

[0010] This section explains the details of power consumption in electronic devices that include a CPU. Power consumption can be broadly divided into The power consumed by the CPU and the power consumed by the system around the CPU. The power consumed by multiple input / output devices and peripheral devices connected inside and outside the electronic device The power consumed by the system around the CPU includes This includes losses in the controller, losses in the wiring pattern, and power consumption in the bus and controller. It can be enjoyed.

[0011] Furthermore, as electronic devices become smaller and thinner, the capacity of batteries and energy storage elements such as EDLCs also becomes limited. However, when the area of ​​the above-mentioned storage element is reduced, the capacity also decreases. Therefore, the circuit, the power storage element, etc. can be housed in a smaller space.

[0012] In addition, the storage element generates heat when it is charged or discharged, which may have a thermal effect on the surrounding area. .

[0013] As electronic devices become smaller and circuits and storage elements are housed in smaller spaces, consumption One of the challenges is how to control power consumption and heat generation.

[0014] One embodiment of the present invention is a novel semiconductor device, a semiconductor device in which a circuit and a power storage element are efficiently housed. The present invention proposes a semiconductor device with low power consumption or a semiconductor device with reduced heat generation.

[0015] Furthermore, one embodiment of the present invention proposes an electronic device with a novel structure. We propose a new electronic device with a novel structure that can be shaped like a human body. We propose wearable electronic devices that can be used as a personal computer or embedded in the body. .

[0016] It should be noted that the description of multiple problems does not preclude the existence of each problem. The embodiments do not necessarily solve all of these problems. These problems are also clearly evident from the description of the present invention, such as drawings and claims. This could be a form of challenge for Ming. [Means for solving the problem]

[0017] One embodiment of the present invention is a semiconductor device including a first transistor, a second transistor, and an electric double layer capacitor. The semiconductor device includes a first transistor, a second transistor, and an electric The multilayer capacitor is preferably provided on one substrate. The second transistor has a first semiconductor in the channel region. The second semiconductor preferably has a wider band gap than the first semiconductor. The electric double layer capacitor preferably has a solid electrolyte.

[0018] One embodiment of the present invention is a semiconductor device including a first transistor, a second transistor, and an electric double layer capacitor. The semiconductor device includes a first transistor, a second transistor, and an electric The multilayer capacitor is preferably provided on one substrate. The second transistor has a first semiconductor in the channel region. The second semiconductor preferably has a wider band gap than the first semiconductor. The electric double layer capacitor preferably contains an ionic liquid.

[0019] In the above embodiment, the first semiconductor includes silicon, and the second semiconductor includes an oxide semiconductor. It is preferable.

[0020] In the above aspect, the electric double layer capacitor preferably has a function of being charged wirelessly. It's nice.

[0021] In the above embodiment, the substrate may be a semiconductor substrate.

[0022] In the above embodiment, the substrate may be a flexible substrate.

[0023] One embodiment of the present invention is a semiconductor device according to any one of the above embodiments, a microphone, a speaker, and a display unit. and at least one of the operation keys.

[0024] In this specification and the like, the term "electricity storage element" refers to an element in general that has an electricity storage function. For example, Lithium-ion secondary batteries, lithium-ion capacitors, electric double-layer capacitors, etc. Includes.

[0025] In this specification and the like, the term "electricity storage device" refers to a device in general that includes the above-described electricity storage element.

[0026] In addition, the ordinal numbers "first," "second," and "third" used in this specification are intended to be used to indicate a mixture of elements. It should be noted that the numbers are added to avoid confusion and are not intended to limit the number.

[0027] In addition, in this specification, the terms "above" and "below" that indicate the position of components are used. The relationship is used for convenience in explaining the relationship with reference to the drawings. The values ​​change depending on the direction in which each component is depicted. It is not limited to words and phrases, and can be rephrased appropriately depending on the situation.

[0028] In this specification, a transistor includes a gate, a drain, and a source. It is an element with at least three terminals. And, the drain (drain terminal, drain region or drain electrode layer) and source (source terminal, source region or source electrode layer) A channel region is provided between the drain and the source, and a current flows through the channel region and the source. In this specification and the like, the channel region is a region through which a current mainly flows. This refers to the area where the fluid flows.

[0029] The source and drain functions may differ depending on the type of transistor used, or the circuit operation. This may be reversed if the direction of the current changes during operation. In the text, the terms source and drain may be used interchangeably. .

[0030] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be replaced with "conductive film." ". Alternatively, for example, the term "insulating film" may be used. It may be possible to change the term to "insulating layer." [Effects of the Invention]

[0031] According to one embodiment of the present invention, a novel semiconductor device can be provided, and a circuit and a power storage element can be efficiently stored. To provide a semiconductor device that is housed in a semiconductor device, to provide a semiconductor device with low power consumption, and This makes it possible to provide a semiconductor device with reduced heat generation.

[0032] Furthermore, according to one embodiment of the present invention, it is possible to provide an electronic device with a novel structure. In essence, it is possible to provide an electronic device with a novel structure that can be made into various external shapes. More specifically, wearable electronic devices that are worn on the body and It becomes possible to provide electronic devices that are embedded and used.

[0033] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description, This becomes clear from the description, drawings, claims, etc. From any description, it is possible to extract effects other than these. [Brief explanation of the drawings]

[0034] [Figure 1] FIG. 1 is a block diagram illustrating a configuration example of a semiconductor device. [Figure 2] 1 is a cross-sectional view showing a configuration example of a semiconductor device. [Figure 3] FIG. 1 is a cross-sectional view of a transistor. [Figure 4] 1 is a cross-sectional view showing a configuration example of a semiconductor device. [Figure 5] 1A and 1B are a top view and a cross-sectional view showing a configuration example of an electric double layer capacitor. [Figure 6] 1A and 1B are a top view and a cross-sectional view showing a configuration example of an electric double layer capacitor. [Figure 7] 1A and 1B are a top view and a cross-sectional view showing a configuration example of an electric double layer capacitor. [Figure 8] 1A to 1C are cross-sectional views illustrating a method for producing an electric double layer capacitor. [Figure 9] 1A and 1B are a top view and a cross-sectional view showing a configuration example of an electric double layer capacitor. [Figure 10] FIG. 1 is a cross-sectional view showing an example of the configuration of an electric double layer capacitor. [Figure 11] 1A and 1B are a top view and a cross-sectional view illustrating a structural example of a transistor. [Figure 12] 1A and 1B are a cross-sectional view and an energy band diagram illustrating a structural example of a transistor. [Figure 13] FIG. 1 is a cross-sectional view illustrating a structural example of a transistor. [Figure 14] FIG. 1 is a cross-sectional view illustrating a structural example of a transistor. [Figure 15] FIG. 1 is a cross-sectional view illustrating a structural example of a transistor. [Figure 16] FIG. 1 is a perspective view showing an example of an electronic device. [Figure 17] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 18] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 19] 1A and 1B are diagrams illustrating examples of electronic devices. [Figure 20] 1A and 1B are a perspective view and a top view showing an example of an electronic device. [Figure 21] 1 is a cross-sectional view showing a configuration example of a semiconductor device. [Figure 22]1A and 1B are a top view and a cross-sectional view illustrating a structural example of a transistor. DETAILED DESCRIPTION OF THE INVENTION

[0035] Hereinafter, embodiments will be described with reference to the drawings. It is possible to carry out the invention in various forms and in various ways without departing from the spirit and scope of the invention. It will be readily apparent to those skilled in the art that various modifications may be made to the design and details of the present invention. The present invention is not limited to the following description of the embodiments. In the embodiments and examples, the same parts or parts having similar functions are denoted by the same reference numerals. The same is used in different drawings, and the repeated explanation will be omitted.

[0036] In addition, in the drawings, the size, thickness of layers, or areas may be exaggerated for clarity. Therefore, the drawings are not necessarily limited to the scale. The figures are merely schematic representations and are not limited to the shapes or values ​​shown in the drawings.

[0037] (Embodiment 1) <Device Block Diagram> FIG. 1 shows a block diagram of a device 10 according to one embodiment of the present invention.

[0038] The device 10 according to this embodiment includes a control module 15, a display module 21, and The control module 15 controls the entire device 10 and communicates with the device. The controller controls the signal transmission and the display of information on the display unit 16.

[0039] The control module 15 includes a CPU 11, a storage element 12, a regulator 13, and a wireless receiver. It has part 14.

[0040] The display module 21 includes a display unit 16, a display drive circuit 19, a storage element 17, a regulator The radio wave receiving unit 20 includes a radio wave data processor 18 and a radio wave receiving unit 20.

[0041] The communication module 26 includes a communication circuit 22, a storage element 23, a regulator 24, and It has a wireless receiving unit 25.

[0042] A regulator is a type of electronic circuit that keeps the output voltage or current constant. The regulator is a circuit that controls the power supply in a linear manner depending on the level of the power load. They are classified into two types: regulators and switching regulators. The regulator is also called a DC-DC converter.

[0043] Each module has a regulator and a storage element. This allows for continuous use time to be restored, and the circuit is connected to allow wireless charging. Each storage element is electrically connected to its respective wireless receiver via its respective regulator. Each regulator is connected to each functional circuit from the connected storage element. Each regulator also supplies the necessary power or signal to the connected storage element. It has a function to prevent overcharging while charging.

[0044] The energy storage elements of each module are mounted on the same board as the functional circuits in the same module. This makes it possible to make the device 10 smaller or thinner. can.

[0045] The device 10 allows each module to be independently turned on or off. It is possible to selectively run only the modules you want to use by using an operating system. This allows the device 10 to save power.

[0046] For example, when a user wants to view information on the display unit 16 without using the communication function, the communication module In the case of the control circuit 26, the power to the communication circuit 22 is cut off and the power storage element 23 is in an off state where it is not used. Then, the display module 21 and the control module 15 are turned on.

[0047] Furthermore, if it is a still image, the display module 21 and the control module 15 are turned on. After displaying a still image on the display unit 16, the control module 15 is turned off while the still image is still displayed. Even if the display module 21 is in the ON state, the still image can be continuously displayed. In this case, the control module 15 is not operating even though a still image is displayed. When viewed from the outside, the power consumption of the control module 15 can be considered to be zero. In 6, an oxide semiconductor having a low off-state current (for example, an oxide material containing In, Ga, and Zn) If a transistor (such as a photodiode) is used or if each pixel has a memory, a still image can be displayed. Even if the power supply from the storage element 17 is cut off after display, the still image can be displayed for a certain period of time. You can also continue.

[0048] In this way, a storage element is provided for each component used in electronic devices, and only the components that are used are selectively charged. By driving the motor in this manner, power consumption can be reduced.

[0049] It is preferable to use EDLC as the storage element of each module. Therefore, the device 10 can be operated at high speed. This can make it possible to create

[0050] The electrolyte of the EDLC is preferably made of a solid. Unlike body electrolytes, they do not leak and can be used at temperatures higher than room temperature, making them safe.

[0051] The EDLC may contain a flame-retardant and non-volatile ionic liquid as an electrolyte. By using an ionic liquid, it is possible to prevent an internal short circuit in the EDLC, an internal temperature rise due to overcharging, etc. Even if the temperature rises, explosion or fire of the storage element can be prevented.

[0052] Note that the register of the CPU 11 may use a memory cell including an oxide semiconductor transistor. It is preferable that an oxide semiconductor transistor is used for the CPU 11. 11 is stopped, and data can be retained even when the supply of power voltage is stopped. This makes it possible to reduce power consumption. Even when the computer user has stopped entering information into a keyboard or other input device, , the operation of the CPU 11 can be stopped, thereby reducing power consumption. .

[0053] The transistors used in the regulators 13, 18, and 24 are oxide semiconductor transistors. The use of a transistor reduces power consumption due to its small off-state current. A regulator (DC-DC converter) whose control circuit is made up of semiconductor transistors is It can operate even at high temperatures of 150° C. or higher. C converters are suitable for electronic devices that are likely to become hot during operation.

[0054] In this embodiment, the display module 21, the control module 15, and the communication module 26 Although an example in which each of the above has a storage element has been shown, the present invention is not limited to these three storage elements, and Furthermore, the electronic device has four or more storage elements, including the functional module and its storage element. That's fine.

[0055] For example, if the exterior of the device 10 is made of a flexible material, it can be worn on the body. In this case, a small power storage element can be distributed inside the device 10. By dispersing the elements, the device feels lighter than a device with one large storage element. In addition, even if each small storage element generates heat, it does not impair the comfort of the user. do not have.

[0056] Next, semiconductor devices that can be used for the device 10 will be described with reference to FIGS. 2 to 4. Make it clear.

[0057] <Configuration Example 1 of Semiconductor Device> FIG. 2 shows a first transistor 720 and a second transistor 73 fabricated on the same substrate. 10 shows a cross-sectional view of a semiconductor device 1000 including a first transistor 740 and a power storage element 740. The first transistor 720 is disposed on the substrate 700, and the second transistor 730 is disposed on the first The capacitor 720 is disposed on the first transistor 730, and the capacitor 740 is disposed on the second transistor 730. There are.

[0058] The channel region of the second transistor 730 is the same as the channel region of the first transistor 720. In particular, the second transistor 730 is preferably made of a semiconductor different from that of the first transistor 730. It is a semiconductor with a wider band gap than the transistor 720 (wide band gap semiconductor). For example, the semiconductor material of the first transistor 720 is preferably silicon. , germanium, silicon germanium, silicon carbide, or gallium arsenide, The semiconductor material of the second transistor 730 is preferably an oxide semiconductor. Transistors using single crystal silicon as a material can easily operate at high speeds. In addition, a transistor including an oxide semiconductor has a low off-state current.

[0059] The power storage element 740 represents a power storage element included in each module of the device 10. The element 740 is preferably a storage element that can recover continuous use time by charging. EDLC is particularly preferable. EDLC has the advantage of being capable of rapid charging and discharging while having a large capacity. This allows the semiconductor device 1000 to operate at high speed.

[0060] The electrolyte of the EDLC is preferably made of a solid. Unlike body electrolytes, they do not leak and can be used at temperatures higher than room temperature, making them safe.

[0061] The EDLC may contain a flame-retardant and non-volatile ionic liquid as an electrolyte. By using an ionic liquid, it is possible to prevent an internal short circuit in the EDLC, an internal temperature rise due to overcharging, etc. Even if the temperature rises, explosion or fire of the storage element can be prevented.

[0062] The semiconductor device 1000 includes a substrate 700, a first transistor 720, and an element isolation layer 727. an insulating film 731, a second transistor 730, an insulating film 732, and an insulating film 741, The power storage element 740, the insulating film 742, the plug 701, the plug 702, and the plug 703. , plug 704, wiring 705, wiring 706, wiring 707, and wiring 708; The first transistor 720 includes a gate electrode 726, a gate insulating film 724, and a sidewall insulating layer 726. 725, an impurity region 721 functioning as a source region or a drain region, and an LDD (L Poorly doped drain regions and extension regions It has a pure region 722 and a channel region 723 .

[0063] The impurity concentration of the impurity region 721 is higher than that of the impurity region 722. The impurity regions 721 and 722 are formed by using the insulating layer 724 and the sidewall insulating layer 725 as a mask. It can be formed in a self-aligning manner.

[0064] The substrate 700 may be a single crystal semiconductor substrate made of silicon or silicon carbide, or a polycrystalline semiconductor Substrates, compound semiconductor substrates made of silicon germanium, and SOI (Silicon on Insulator) A semiconductor substrate can be used. The transistor can easily operate at high speed. When an n-type substrate is used, an impurity element that imparts n-type conductivity is added to a part of the substrate 700 to form an n-type It is also possible to form a well and form a p-type transistor in the area where the n-type well is formed. As impurity elements that give n-type conductivity, phosphorus (P), arsenic (As), etc. can be used. As an impurity element for imparting p-type conductivity, boron (B) or the like can be used. .

[0065] The substrate 700 may be a metal substrate or an insulating substrate on which a semiconductor film is provided. The substrate may be, for example, a stainless steel substrate or a substrate having a stainless steel foil. Examples of insulating substrates include plates, tungsten substrates, and substrates with tungsten foil. The plate may be, for example, a glass substrate, a quartz substrate, a plastic substrate, a flexible substrate, or a laminated substrate. Examples of the substrate include a film, a paper containing a fibrous material, and a base film. Examples include barium borosilicate glass, aluminoborosilicate glass, or soda lime glass. Examples of flexible substrates include polyethylene terephthalate (PET) and glass. , polyethylene naphthalate (PEN), and polyethersulfone (PES). The materials include flexible plastics, acrylic resins, etc. Examples of films include polypropylene, polyester, polyvinyl fluoride, or polychlorinated Examples of base films include polyester, polyamide, and polyimide. Examples include acrylic, aramid, epoxy, inorganic vapor deposition film, and paper.

[0066] Note that a semiconductor element may be formed using a certain substrate and then transferred to another substrate. Examples of the substrate onto which the semiconductor element is transferred include the above-mentioned substrates as well as paper substrates, Polyimide film substrate, stone substrate, wood substrate, Fabric substrate (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester, etc.) , leather substrate, or rubber substrate. By using these substrates, Formation of transistors, formation of low-power transistors, manufacturing of durable devices, heat resistance It is possible to provide the device with improved durability, lighter weight, or thinner thickness.

[0067] The first transistor 720 is isolated from other transistors formed in the substrate 700 by an element isolation layer 727. It is separated from the transistor.

[0068] The first transistor 720 may be a transistor having silicide (salicide) or a side A transistor without a wall insulating layer may be used. With this structure, the resistance of the source region and the drain region can be reduced, and the speed of the semiconductor device can be increased. In addition, since it can operate at a low voltage, it is possible to reduce the power consumption of the semiconductor device. It is Noh.

[0069] The second transistor 730 is an oxide semiconductor transistor. Details of 30 will be explained in the third embodiment described later.

[0070] Here, when a silicon-based semiconductor material is used for the first transistor 720 provided in the lower layer, In this case, hydrogen in the insulating film provided near the semiconductor film of the first transistor 720 is converted into silicon. This has the effect of terminating the dangling bonds of the first transistor 720 and improving the reliability of the first transistor 720. On the other hand, when an oxide semiconductor is used for the second transistor 730 provided in the upper layer, Hydrogen in the insulating film provided near the semiconductor film of the second transistor 730 is converted into hydrogen by the oxide semiconductor. This is one of the factors that generate carriers in the body, and therefore reduces the reliability of the second transistor 730. Therefore, the first transistor using a silicon-based semiconductor material A second transistor 730 using an oxide semiconductor is stacked over the transistor 720. In this case, it is preferable to provide an insulating film 731 between them, which has a function of preventing hydrogen diffusion. This is particularly effective. The insulating film 731 confines hydrogen in the lower layer, and the first transistor In addition to improving the reliability of Star 720, the diffusion of hydrogen from the lower layer to the upper layer is suppressed. This can also improve the reliability of the second transistor 730.

[0071] The insulating film 731 may be made of, for example, aluminum oxide, aluminum oxynitride, or gallium oxide. , gallium oxide nitride, yttrium oxide, yttrium oxide nitride, hafnium oxide, oxide Hafnium nitride, yttria-stabilized zirconia (YSZ), etc. can be used.

[0072] In addition, a second transistor 730 including an oxide semiconductor film is formed on the second insulating film 732 so as to cover the second transistor 730. An insulating film 732 having a function of preventing diffusion of hydrogen is formed over the transistor 730. The insulating film 732 can be formed using a material similar to that of the insulating film 731. In particular, it is preferable to use aluminum oxide. The aluminum oxide film is resistant to hydrogen, moisture, etc. High blocking effect that prevents both impurities and oxygen from passing through the membrane Therefore, an aluminum oxide film is used as the insulating film 732 covering the second transistor 730. By using the above, oxygen is released from the oxide semiconductor film included in the second transistor 730. In addition, water and hydrogen can be prevented from entering the oxide semiconductor film.

[0073] The plugs 701 to 704 and the wirings 705 to 707 are made of copper (Cu), tungsten (Tungsten alloy), and titanium (Ti). Stainless steel (W), molybdenum (Mo), gold (Au), aluminum (Al), manganese (M n), titanium (Ti), tantalum (Ta), nickel (Ni), chromium (Cr), lead (P b), tin (Sn), iron (Fe), cobalt (Co) or other low-resistivity materials; It is preferable to use a single layer or a multilayer of a conductive film containing an alloy or a compound containing the alloy as a main component. In particular, high-melting-point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, are preferred. It is preferable to use a low-resistance conductive material such as aluminum or copper. Furthermore, when a Cu-Mn alloy is used, manganese oxide is formed at the interface with the insulator containing oxygen. Manganese oxide is preferred because it has the function of suppressing Cu diffusion.

[0074] The storage element 740 is an electric double layer capacitor that can recover continuous use time by charging. The storage element 740 is a solid-state battery containing a solid electrolyte. The battery is electrically connected to the wireless receiving unit via a regulator so that charging is possible.

[0075] The power storage element 740 may be manufactured using a semiconductor manufacturing process. The manufacturing process includes the film formation process, crystallization process, plating process, cleaning process, lithography process, etching process, and Etching, polishing, impurity implantation, heat treatment, and other processes for manufacturing semiconductor devices It refers to a general technique that is sometimes used.

[0076] The details of power storage element 740 will be described in Embodiment 2 below.

[0077] The insulating film 741 is made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, Aluminum oxide, aluminum nitride, aluminum oxynitride, hafnium oxide, dioxide ZrO2, Yttrium oxide, Gallium oxide, Lanthanum oxide, Cesium oxide, Titanium oxide One or more of aluminum or magnesium oxide may be selected and used in a single layer or multilayer configuration.

[0078] When the power storage element 740 contains lithium, the insulating film 741 prevents (blocks) the diffusion of lithium. It is preferable that the lithium contained in the power storage element 740 has a function of forming a mobile ion. into the semiconductor element (first transistor 720 or second transistor 730) as This causes deterioration of the semiconductor element. The insulating film 741 blocks lithium ions. As a result, a highly reliable semiconductor device can be provided.

[0079] When the power storage element 740 contains lithium, the insulating film 741 is formed of an element containing fluorine, chlorine, bromine, iodine, or the like. It is preferable that the insulating film 741 contains a halogen. The lithium is easily bonded to the metal, lithium, and the lithium is immobilized in the insulating film 741. This can prevent the diffusion of the impurities to the outside of the insulating film 741.

[0080] For example, silicon nitride is deposited by CVD (Chemical Vapor Deposition) as the insulating film 741. When a film is formed by the deposition method, the volume ratio of the source gas is 3% to 6%, for example By mixing a gas containing about 5% halogen, the halogen in the resulting silicon nitride film is The halogen elements contained in the insulating film 741 are detected by secondary ion mass spectrometry (S IMS (Secondary Ion Mass Spectrometry) The concentration that can be obtained is 1×10 17 atoms / cm 3 or more, preferably 1 × 10 18 atom s / cm 3 or more, more preferably 1×10 19 atoms / cm 3 That's all.

[0081] The insulating film 742 has a function of protecting the power storage element 740. Resins (polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin) Insulating materials such as glass, amorphous compounds, and ceramics In addition, a water-absorbing layer such as calcium fluoride can be used between the resin layers. The insulating film 742 may be formed by a spin coating method, an ink-jet method, or the like. The insulating film 742 can be formed using silicon oxide, silicon oxynitride, or silicon nitride. Silicon nitride, silicon oxide, aluminum nitride, aluminum oxynitride aluminum, hafnium oxide, zirconium oxide, yttrium oxide, gallium oxide, lanthanum oxide Select one or more of tantalum oxide, cesium oxide, tantalum oxide, and magnesium oxide, and Alternatively, it may be made by laminating.

[0082] In the semiconductor device 1000, a semiconductor element may be further fabricated on the power storage element 740. In this case, the insulating film 742 prevents (blocks) lithium diffusion, similarly to the insulating film 741. The insulating film 742 preferably has a function of blocking lithium, thereby improving reliability. Therefore, a high-quality semiconductor device can be provided.

[0083] When a semiconductor element is formed on the power storage element 740, the insulating film 742 is formed in the same manner as the insulating film 741. It is preferable that the insulating film 742 contains a halogen such as fluorine, chlorine, bromine, or iodine. By including halogen, it easily bonds with lithium, an alkali metal, and lithium forms an insulating film. This can prevent the virus from spreading outside of 742.

[0084] 2 to 4, the areas without symbols and hatching patterns are The region is made up of aluminum oxide, aluminum oxide nitride, and Aluminum, magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride Silicon, Gallium oxide, Germanium oxide, Yttrium oxide, Zirconium oxide, Oxide Contains one or more selected from lanthanum, neodymium oxide, hafnium oxide, tantalum oxide, etc. Insulators can be used. In addition, polyimide resin, polyamide resin, aluminum Use of organic resins such as acrylic resin, siloxane resin, epoxy resin, and phenolic resin It is also possible.

[0085] The semiconductor device 1000 of FIG. 2 includes a heat sink, a water-cooled cooler, and a It is preferable to provide a cooling device such as a cooling fan. This can prevent malfunction of the semiconductor device 1000 due to heat generated by the heat generating element 740 .

[0086] The semiconductor device 1000 of FIG. 2 includes a storage element 740, a first transistor 720, and a second transistor 730. An air gap (vacuum layer gap) may be provided between the transistor 730. By providing the capacitor, the heat generated from the power storage element 740 is transferred to the first transistor 720 and the This prevents the heat from reaching the second transistor 730. Therefore, the malfunction of the second transistor 730 can be prevented.

[0087] FIG. 2 shows a case where the power storage element 740 is connected to the first transistor 720 and the second transistor 730. As shown above, the capacitor 740 is connected to the first transistor 720 and the second transistor 730. In that case, the first transistor 720, the power storage element 740, and the second transistor 730 may be provided between them. The elements are formed in the order of the first transistor 730 and the second transistor 730. When manufacturing the second transistor 730, if a high-temperature heat treatment is required that destroys the second transistor 730, Preferably, the second transistor 730 is formed after the electroconductive element 740 is formed.

[0088] For example, the first transistor 720 and the second transistor 730 can be used to form the device of FIG. The CPU 11 or the regulator 13 included in the device 10 is fabricated, and the storage element 7 By fabricating the circuit 40 on the same substrate as these circuits, the device 10 can be made smaller or thinner. This makes it possible to:

[0089] <Configuration Example 2 of Semiconductor Device> In FIG. 2, the first transistor 720 is a planar transistor. The shape of the transistor 720 is not limited to this. For example, as shown in FIG. N (fin) type or TRI-GATE type transistor 750, It may be used as the first transistor 720 .

[0090] Figure 3 shows a cross section of transistor 750. The cross section shown on the left shows the transistor The cross section shown on the right is a cross section of the transistor 750 in the channel length direction. 1 shows a cross-sectional view in the channel width direction of the semiconductor device shown in FIG.

[0091] In FIG. 3, an insulating film 757 is provided on a substrate 700. The substrate 700 has a thin film at the tip. The semiconductor device has a protrusion (also called a fin) on which an insulating film may be provided. The insulating film prevents the substrate 700 from being etched when the protrusions are formed. The protrusions do not need to have a thin tip. For example, the protrusion may be a substantially rectangular parallelepiped protrusion, or a protrusion with a thick tip. A gate insulating film 754 is provided on the portion, and a gate electrode 756 and a sidewall insulating film are provided thereon. The substrate 700 is provided with an edge layer 755. The substrate 700 may include a layer that functions as a source or drain region. and impurity regions 751 that function as LDD regions and extension regions. 752 and a channel region 753 are formed. However, the semiconductor device according to one embodiment of the present invention is not limited to this. For example, an SOI substrate may be processed to form a semiconductor region having a protrusion.

[0092] <Configuration Example 3 of Semiconductor Device> The semiconductor device 1200 shown in FIG. 4 includes a first transistor 720 and a power storage element 740. The second transistor 730 is disposed in a lower layer than the first transistor 720 and the storage element 7 2 in that the semiconductor device 1000 does not overlap with the semiconductor device 1000 shown in FIG.

[0093] The semiconductor device 1200 has the configuration shown in FIG. 4, and includes the first transistor 720 and The plug and wiring connected to the power storage element 740 can be fabricated simultaneously, simplifying the process. In addition, when manufacturing the power storage element 740, the plug 701 or the wiring 70 When high temperature treatment is required to the extent that the plug 701 or 5 is destroyed, the configuration of FIG. This is preferable because the power storage element 740 can be formed before the wiring 705 .

[0094] Note that in FIG. 4, the energy storage element 740 is formed after the first transistor 720 is formed. However, the capacitor 740 may be formed first, and then the first transistor 720 may be formed. In particular, when forming the power storage element 740, the first transistor 720 may be destroyed. If high temperature processing is required, the capacitor element 740 is formed first, and then the first transistor 72 is formed. It is preferable to form 0.

[0095] For other components of the semiconductor device 1200, please refer to the description of the semiconductor device 1000. That's fine.

[0096] The structures and methods described in this embodiment may be combined as appropriate with structures and methods described in other embodiments. It can be used in combination.

[0097] (Embodiment 2) In this embodiment, an electric double layer capacitor that can be used for the energy storage element shown in Embodiment 1 is The details of the capacitor (EDLC) and an example of its configuration will be explained in detail using figures.

[0098] <Configuration example 1 of energy storage element> FIG. 5A is a top view of the EDLC 200. The dashed line XY in FIG. A cross-sectional view of the device is shown in FIG. 5(B). In FIG. 5(A), some elements are omitted for clarity. are illustrated enlarged, reduced, or omitted.

[0099] The EDLC 200 shown in FIGS. 5(A) and 5(B) includes an insulating film 201 and a a current collector layer 202 formed on the surface of the active material layer 203; Electrolyte layer 204 formed on the substrate 03, and active material layer 205 formed on the electrolyte layer 204. and a current collector layer 206 formed on the active material layer 205. The active material layer 203 functions as either a positive electrode or a negative electrode, and the active material layer 205 and the current collector layer 2 The current collector layer 206 functions as the other of the positive and negative electrodes. An insulating film 207 is formed on the insulating film 207, and wiring 208 is formed in the opening of the insulating film 207. The wire 208 is electrically connected to the current collector layer 206 .

[0100] The insulating film 201 is made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, Aluminum oxide, aluminum nitride, aluminum oxynitride, hafnium oxide, dioxide ZrO2, Yttrium oxide, Gallium oxide, Lanthanum oxide, Cesium oxide, Titanium oxide One or more of aluminum or magnesium oxide may be selected and used in a single layer or multilayer configuration.

[0101] The current collector layer 202 and the current collector layer 206 are formed by a method such as sputtering, CVD, or nanoimprint. The film can be formed by a sputtering method, a vapor deposition method, a coating method, or the like. It is preferable to deposit the film using a DC power supply rather than an RF power supply. The coating method is preferable because it has a high film formation rate and therefore the tact time is short. The thickness of the current collector layer 206 may be, for example, 100 nm or more and 100 μm or less.

[0102] The current collector layer 202 and the current collector layer 206 can be made of, for example, a conductive material. Examples of the conductive materials include gold, platinum, zinc, iron, nickel, copper, aluminum, titanium, and titanium. One or more of the above metals, tantalum, and manganese may be selected and used in a single layer or a multilayer. A conductive film containing a metal alloy or a compound containing the metal alloy as the main component may be used in a single layer or a laminated layer. It also improves the heat resistance of silicon, neodymium, scandium, molybdenum, etc. Aluminum alloys with added elements can be used. It may be formed from a metal element that reacts with silicon to form a silicide. The metal elements that can be used are zirconium, titanium, hafnium, vanadium, niobium, and tantalum. Examples include zinc, chromium, molybdenum, tungsten, cobalt, and nickel.

[0103] The active material layers 203 and 205 have a high specific surface area that can adsorb and desorb ions. For example, a carbon-based material can be used. , activated carbon, graphite, graphitizable carbon (soft carbon), non-graphitizable carbon (hard carbon) ), carbon nanotubes, graphene, carbon black, etc. Microcarbon microbeads (MCMB), coke-based artificial graphite, pitch-based artificial graphite, etc. There are synthetic graphite and natural graphite such as spherical natural graphite.

[0104] In addition, the above material capable of adsorbing and desorbing ions is added to one of the active material layers 203 and 205. ions are inserted into or removed from the other of the active material layer 203 and the active material layer 205 using the Materials that can insert and desorb ions may be used. Examples include the above-mentioned carbon-based materials.

[0105] In addition, the above material capable of adsorbing and desorbing ions is added to one of the active material layers 203 and 205. The other of the active material layers 203 and 205 is alloyed and de-alloyed with lithium ions using the Materials capable of alloying and dealloying reactions with lithium ions may also be used. Metals include, for example, Ga, Si, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Materials containing at least one of Cd, In, etc. can be used. The alloy materials used include, for example, Mg2Si, Mg2Ge, Mg2Sn, SnS2, V2Sn3, FeSn2, CoSn2, Ni3Sn2, Cu6Sn5, Ag3Sn, Ag 3Sb, Ni2MnSb, CeSb3, LaSn3, La3Co2Sn7, CoSb3, InSb, SbSn, etc. In addition, the other of the active material layers 203 and 205 may contain S Oxides such as iO, SnO, and SnO2 may also be used.

[0106] In addition, the active material layer 203 and the active material layer 205 contain a binder ( binder).

[0107] The binder preferably contains, for example, a water-soluble polymer. For example, polysaccharides can be used. Examples of polysaccharides include carboxymethyl cellulose. CMC, methyl cellulose, ethyl cellulose, hydroxypropyl cellulose and cellulose derivatives such as diacetyl cellulose and regenerated cellulose, starch, etc. It can be used.

[0108] In addition, styrene-butadiene rubber (SBR) and styrene-isoprene are used as binders. Styrene rubber, acrylonitrile butadiene rubber, butadiene rubber, ethylene polypropylene It is preferable to use rubber materials such as pyrene-diene copolymers. These rubber materials have the following properties: It is more preferable to use it in combination with the water-soluble polymer described above.

[0109] Alternatively, the binder may be polystyrene, polymethyl acrylate, or polymethyl methacrylate. Polymethylmethacrylate (PMMA), sodium polyacrylate, polyvinyl alcohol (PVA), poly Ethylene oxide (PEO), polypropylene oxide, polyimide, polyvinyl chloride, Polytetrafluoroethylene, polyethylene, polypropylene, isobutylene, polyethylene Polyethylene terephthalate, nylon, polyvinylidene fluoride (PVdF), polyacrylonite It is preferable to use a material such as polyaniline (PAN).

[0110] Two or more of the above binders may be used in combination.

[0111] In addition, the active material layer 203 and the active material layer 205 are provided with a conductive additive for increasing the conductivity of the active material layer. The composition may also contain an agent.

[0112] Examples of the conductive additive include natural graphite, artificial graphite such as mesocarbon microbeads, and carbon fiber. Examples of carbon fibers that can be used include mesophase pitch carbon fibers. Carbon fibers such as isotropic pitch-based carbon fibers can be used. Carbon nanofibers and carbon nanotubes can be used. The tube can be produced by, for example, vapor phase growth method. Carbon materials such as carbon black (acetylene black (AB) etc.) or graphene In addition, for example, copper, nickel, aluminum, silver, gold, etc. Metal powder, metal fiber, conductive ceramic material, etc. can be used.

[0113] Flaky graphene has excellent electrical properties, such as high conductivity, as well as flexibility and functionality. Graphene has excellent physical properties, such as mechanical strength, and is therefore used as a conductive additive. This makes it possible to increase the number of contact points and the contact area between the active materials.

[0114] In this specification, graphene refers to a single-layer graphene or a graphene having 2 to 100 layers. Single-layer graphene is a graphene consisting of a single atomic layer of carbon molecules with π bonds. Graphene oxide refers to a compound in which the graphene is oxidized. When graphene is formed by reducing graphene oxide, Not all of the oxygen contained in the graphene is released, and some of the oxygen remains in the graphene. When oxygen is present, the percentage of oxygen is measured graphically using XPS (X-ray photoelectron spectroscopy). It is 2% or more and 20% or less of the total amount of phenes, preferably 3% or more and 15% or less.

[0115] The thickness of the active material layer 203 and the active material layer 205 is, for example, 100 nm or more and 100 μm or less. That's fine.

[0116] The electrolyte layer 204 can be formed by sputtering, vapor deposition, CVD, laser ablation, or gas deposition. It is possible to use a solid electrolyte that can be formed by the position method, coating method, or sol-gel method. preferable.

[0117] The electrolyte layer 204 can be made of a sulfide-based solid electrolyte, such as Li7P3S 11 , Li 3.25 P 0.95 S4, Li 10 GeP2S 12 , Li 3.25 Ge 0.2 5P 0.75 S4, Li2S-P2S5, Li2S-GeS2, Li2S-SiS2-L i3PO4, Li2S-SiS2-Ga2S3, Li2S-SiS2-Li4SiO4, LiI-Li2S-P2S5, LiI-Li2S-B2S3, LiI-Li2S-SiS 2, etc. Lithium complex sulfide materials.

[0118] The electrolyte layer 204 can be made of an oxide-based solid electrolyte. For example, Li1 .3 Al 0.3 Ti 1.7 (PO4)3, Li 1.07 Al 0.69 Ti 1.46 (PO 4)3, Li4SiO4-Li3BO3, Li 2.9 PO 3.3 N 0.46 , Li 3.6 Si 0.6 P 0.4 O4, Li 1.5 Al 0.5 Ge 1.6 (PO4)3, Li2O, L i2CO3, Li2MoO4, Li3PO4, Li3VO4, Li4SiO4, LLT( La 2 / 3-x Li 3x TiO3), LLZ(Li7La3Zr2O 12 ) etc. do.

[0119] The electrolyte layer 204 contains Li + and BH4 - A solid electrolyte containing, for example, , LiBH4, Li(BH4) 0.75 I 0.25 , Li(BH4) 0.75 Br 0.2 Examples of solid electrolytes include 5.

[0120] The electrolyte layer 204 is made of polyethylene oxide (PEO) or the like formed by a coating method or the like. Furthermore, the above-mentioned inorganic solid electrolyte and polymer solid electrolyte may be used. A composite solid electrolyte containing a solid electrolyte may also be used.

[0121] The thickness of the electrolyte layer 204 may be, for example, 100 nm or more and 100 μm or less.

[0122] The insulating film 207 has a function of protecting the EDLC 200. For example, the insulating film 207 may be Resins (polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy resin) Insulating materials such as glass, amorphous compounds, and ceramics In addition, a water-absorbing layer such as calcium fluoride can be used between the resin layers. The insulating film 207 may be formed by a method such as spin coating or ink jetting. The insulating film 207 can be formed using silicon oxide, silicon oxynitride, or silicon nitride. Silicon nitride, silicon oxide, aluminum nitride, aluminum oxynitride aluminum, hafnium oxide, zirconium oxide, yttrium oxide, gallium oxide, lanthanum oxide Select one or more of tantalum oxide, cesium oxide, tantalum oxide, and magnesium oxide, and Alternatively, it may be made by lamination.

[0123] The wiring 208 is made of copper (Cu), tungsten (W), molybdenum (Mo), gold (Au), or aluminum. Aluminum (Al), Manganese (Mn), Titanium (Ti), Tantalum (Ta), Nickel (Ni), chromium (Cr), lead (Pb), tin (Sn), iron (Fe), cobalt (Co) Conductive materials containing low-resistivity materials, alloys, or compounds with these as the main components A single layer or a multilayer of films is preferred.

[0124] As shown in FIG. 5(C), the electrolyte layer 204 is provided with a conductive layer 206 to prevent the positive and negative electrodes from short-circuiting. Separator 209 may be provided. Separator 209 is made of an insulating material with holes. Examples of the material include cellulose, polypropylene, and polyethylene. do.

[0125] In addition, multiple EDLC2s can be connected depending on the amount of power required by the semiconductor device or electronic device. 00 may be connected in series and / or in parallel. By connecting 00 in series and / or parallel, the energy density of the EDLC can be increased. This is also preferable because it reduces the area occupied.

[0126] By manufacturing the EDLC200 with the above configuration, a safer and more reliable energy storage element can be provided. Furthermore, it has a high affinity with semiconductor elements, and can provide a fine electricity storage element.

[0127] <Configuration example 2 of energy storage element> FIG. 6A is a top view of the EDLC 210. The dashed line XY in FIG. A cross-sectional view of the device is shown in FIG. 6(B). In FIG. 6(A), some elements are omitted for clarity. are illustrated enlarged, reduced, or omitted.

[0128] The EDLC 210 shown in FIGS. 6(A) and 6(B) has a current collector layer 202 and an active material layer 203 arranged as islands. After processing the electrode into a shape, an electrolyte layer 204, an active material layer 205, and a current collector layer 206 are formed. This is different from the EDLC200 in Fig. 5. By doing so, the positive and negative electrodes are prevented from short-circuiting. In addition, the EDLC 210 has the current collector layer 206 routed as wiring. It differs from the EDLC200 in that

[0129] As shown in FIG. 6(C), the electrolyte layer 204 is provided with a conductive layer 206 to prevent the positive and negative electrodes from short-circuiting. Separator 209 may be provided. Separator 209 is made of an insulating material with holes. Examples of the material include cellulose, polypropylene, and polyethylene. do.

[0130] For details about the other components, see the description of the EDLC 200 in FIG. 5. .

[0131] By manufacturing the EDLC210 with the above configuration, a safer and more reliable energy storage element can be provided. Furthermore, it has a high affinity with semiconductor elements, and can provide a fine electricity storage element.

[0132] <Configuration example 3 of energy storage element> FIG. 7A is a top view of the EDLC 220. The dashed line XY in FIG. A cross-sectional view of the device is shown in FIG. 7(B). In FIG. 7(A), some elements are omitted for clarity. are illustrated enlarged, reduced, or omitted.

[0133] The EDLC 220 shown in FIGS. 7A and 7B includes an insulating film 201 and a a current collector layer 202 formed on the surface of the active material layer 213; 13, a separator 214 formed on the active material layer 21, and 5 and a current collector layer 206 formed on the active material layer 215. The active material layer 213 functions as either a positive electrode or a negative electrode, and the active material layer 215 and the current collector The layer 206 functions as the other of the positive and negative electrodes. An insulating film 217 is formed on the insulating film 217, and wiring 208 is formed in the opening of the insulating film 217. The wiring 208 is electrically connected to the current collector layer 206 .

[0134] The active material layer 213, the separator 214, and the active material layer 215 are made of particulate materials, and It is preferable that the liquid contains an ionic liquid.

[0135] In FIG. 7B, the active material layer 213, the separator 214, and the active material layer 215 are arranged in a circle. Although it is illustrated as an aggregate, this is a schematic illustration of each layer being made up of particulate matter. The number, size, or shape of the circles in the figure does not represent the actual number, size, or shape of the particles. is not a reflection of the

[0136] Next, a method for manufacturing the EDLC 220 will be described with reference to FIG.

[0137] First, on the insulating film 201, a current collector layer 202, an active material layer 213, a separator 214, and an active material Layer 215, current collector layer 206, is deposited (FIG. 8(A)).

[0138] The insulating film 201, the current collector layer 202 and the current collector layer 206 are formed by a sputtering method, a CVD method, a nano-particle method, or the like. The layer can be formed by an imprint method, a vapor deposition method, a coating method, or the like.

[0139] The insulating film 201, the current collecting layer 202, and the current collecting layer 206 can be made of the materials shown in FIG. Please refer to the description of EDLC200.

[0140] It is preferable that a porous material is used for the active material layer 213 and the active material layer 215. Examples of the material include carbon-based materials such as activated carbon and graphite.

[0141] The active material layer 213 and the active material layer 215 may also contain the binder and conductive additive described above. stomach.

[0142] It is preferable that an insulating material is used for the separator 214. Examples of such materials include For example, silicon oxide can be used.

[0143] The particles constituting the active material layer 213, the active material layer 215 and the separator 214 are formed by gas deposition. Preferably, the deposition is performed using aerosolized gas deposition or aerosolized gas deposition.

[0144] Next, the current collector layer 202, the active material layer 213, and the separator 21 are formed by photolithography. 4. The active material layer 215 and the current collector layer 206 are processed into an island shape (FIG. 8(B)). Instead of lithography, a shadow mask, electron beam exposure, etc. are used to create the shape shown in Figure 8(B). It may also be formed into a shape.

[0145] Next, the electrolyte solution 216 is dropped onto the active material layer 213, the separator 214, and the active material layer 215. Then, the electrode is impregnated with an electrolyte 216 (FIG. 8(C)).

[0146] The electrolytic solution 216 functions as an electrolyte for the EDLC 220. The electrolytic solution 216 is flame-retardant. It is preferable that the ionic liquid contains a non-volatile ionic liquid (room temperature molten salt). Alternatively, a combination of several types may be used. Therefore, even if the internal temperature of the storage element rises due to an internal short circuit or overcharging, the storage element will not burst. Ionic liquids consist of cations and anions, and are organic cations. The organic cations include imidazolium cations and pyridinium cations. Aromatic cations such as ammonium cations, quaternary ammonium cations, and tertiary sulfonium cations and aliphatic onium cations such as quaternary phosphonium cations. The anion may be a monovalent amide anion, a monovalent methide anion, or a fluorosulfonyl anion. Phosphate anion, perfluoroalkylsulfonate anion, tetrafluoroborate, -fluoroalkyl borate, hexafluorophosphate, or perfluoroalkyl Examples include phosphate.

[0147] For example, an example of an imidazolium cation is ethylmethylimidazolium (EMI). cations.

[0148] For example, an example of a quaternary ammonium cation is N-methyl-N-propylpyrrolidinyl. nium (P13) cation or N-methyl-N-propylpiperidinium (PP13) cations.

[0149] The ionic liquid may be mixed with an aprotic organic solvent. Examples of organic solvents include ethylene carbonate (EC), propylene carbonate (P C), butylene carbonate, chloroethylene carbonate, vinylene carbonate, gamma -Butyrolactone, γ-valerolactone, dimethyl carbonate (DMC), diethyl carbonate Carbonate (DEC), Ethyl methyl carbonate (EMC), Methyl formate, Methyl acetate , methyl butyrate, 1,3-dioxane, 1,4-dioxane, dimethoxyethane (DME) , dimethyl sulfoxide, diethyl ether, methyl diglyme, acetonitrile, benzophenone one of benzophenone, tetrahydrofuran, sulfolane, sultone, etc., or Two or more of them can be used in any combination and ratio.

[0150] In addition, the electrolyte 216 contains vinylene carbonate, propane sultone (PS), tert-butyl ether, and Tetrobenzen (TBB), fluoroethylene carbonate (FEC), LiBOB, etc. Additives may be added. The concentration of the additives is, for example, 0.1 weight percent based on the total solvent. % or more and 5% or less by weight.

[0151] In addition, a solute containing lithium ions may be added to the electrolyte 216. For example, LiPF6, LiClO4, LiAsF6, LiBF4, LiAlCl4, LiSCN, LiBr, L iI, Li2SO4, Li2B 10 Cl 10 , Li2B 12 Cl 12 , LiCF3SO3 , LiC4F9SO3, LiC(CF3SO2)3, LiC(C2F5SO2)3, Li N(CF3SO2)2, LiN(C4F9SO2)(CF3SO2), LiN(C2F5 SO2)2 or any combination of two or more of these lithium salts, Can be used in proportions.

[0152] The electrolyte 216 is free from granular dust and elements other than the constituent elements of the electrolyte (hereinafter simply referred to as "impurities"). It is preferable to use a highly purified electrolyte solution with a low content of . In order to achieve this, the weight ratio of impurities to the electrolyte is 1% or less, preferably 0.1% or less, and more preferably It is preferable that the content be 0.01% or less.

[0153] The step of FIG. 8(C) is preferably carried out in a reduced pressure atmosphere. The gas contained in the active material layer 213, the separator 214, and the active material layer 215 is released to the outside of the element. Instead, the electrolyte 216 permeates into the inside of the element by capillary action.

[0154] Since the electrolyte 216 contains an ionic liquid, it has high viscosity and does not remain inside the element even in a reduced pressure environment. and there is no leakage.

[0155] Finally, an insulating film 217 and wiring 208 are formed (FIG. 8(D)).

[0156] For the wiring 208, please refer to the description of the EDLC 200 in FIG.

[0157] The insulating film 217 functions as a protective layer for the EDLC 220. Aluminum, aluminum oxide nitride, magnesium oxide, silicon oxide, silicon oxide nitride Silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide, yttria ammonium, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide Inorganic insulating films containing one or more selected from the following can be used. Grease, polyamide resin, acrylic resin, siloxane resin, epoxy resin, phenolic resin, etc. Organic resins such as those listed above can also be used.

[0158] In particular, it is preferable that the insulating film 217 does not react with the electrolyte solution 216. As the insulating film 17, it is preferable to use an inorganic insulating film among the above-mentioned insulating materials.

[0159] In addition, the electrolyte solution 216 containing the ionic liquid has low volatility and does not react with water and deteriorate. Therefore, if the EDLC220 does not contain any other materials that will react with water and deteriorate, The EDLC 220 may be exposed to the atmosphere. In this case, the insulating film 217 is not required. is also good.

[0160] In addition, if the EDLC220 contains a material that reacts with water and deteriorates, 0 is placed in an environment where a reduced pressure state is maintained, the EDLC 2 20 long-term reliability can be ensured.

[0161] By manufacturing the EDLC220 with the above configuration, a safer and more reliable energy storage element can be provided. Furthermore, it has a high affinity with semiconductor elements, and can provide a fine electricity storage element.

[0162] <Configuration example 4 of energy storage element> FIG. 9A is a top view of the EDLC 230. The dashed line XY in FIG. A cross-sectional view of the device is shown in FIG. 9(B). In FIG. 9(A), some elements are omitted for clarity. are illustrated enlarged, reduced, or omitted.

[0163] The EDLC 230 shown in FIGS. 9(A) and 9(B) has a current collector layer 202 and an active material layer 213 arranged as islands. After processing into a shape, a separator 214, an active material layer 215, and a current collector layer 206 are formed. This differs from the EDLC220 in Fig. 7. In addition, the EDLC 230 is configured such that the current collector layer 206 is routed as a wiring. This differs from the EDLC220 in that it simplifies the manufacturing process. It is possible.

[0164] For other components, please refer to the description of the EDLC 220 in FIG.

[0165] By manufacturing the EDLC230 with the above configuration, a safer and more reliable energy storage element can be provided. Furthermore, it has a high affinity with semiconductor elements, and can provide a fine electricity storage element.

[0166] <Configuration example 5 of energy storage element> The EDLC 240 shown in FIG. 10(A) is made up of an insulating film 201 and a semiconductor integrated circuit formed on the insulating film 201. a current collector layer 202, an active material layer 203 formed on the current collector layer 202, and a The electrolyte layer 204 formed thereon, the insulating film 251 formed on the electrolyte layer 204, and the electrolyte layer 204 and an active material layer 205 formed on the insulating film 251, and The current collector layer 202 and the active material layer 203 are the positive and negative electrodes. The current collector layer 206 and the active material layer 205 function as the other of the positive and negative electrodes. Furthermore, an insulating film 207 is formed at least on the current collector layer 206 .

[0167] In the EDLC 240 shown in FIG. 10(A), an insulating film 251 is formed between the electrolyte layer 204 and the active material layer The presence of the cathode between the cathode 205 can prevent short circuits between the cathode and anode.

[0168] The insulating film 251 can be made of, for example, an organic resin or an inorganic insulating material. Examples of the resin include polyimide resin, polyamide resin, acrylic resin, siloxane resin, and ethylene resin. The inorganic insulating material may be an epoxy resin, a phenol resin, or the like. Silicon, silicon oxynitride, etc. can be used. This makes it easy to form the insulating film 251. Therefore, it is particularly preferable to use a photosensitive resin. For example, photolithography, sputtering, vapor deposition, droplet ejection (inkjet) For example, a printing method (screen printing, offset printing, etc.) or the like may be used.

[0169] For details about the other components of the EDLC240, see the description of the EDLC200 in Figure 5. Just do that.

[0170] As shown in FIG. 10(B), the EDLC 240 has an insulating film 25 on the active material layer 203. 1 may be formed.

[0171] By manufacturing the EDLC240 with the above configuration, a safer and more reliable energy storage element can be provided. Furthermore, it has a high affinity with semiconductor elements, and can provide a fine electricity storage element.

[0172] The structures and methods described in this embodiment may be combined as appropriate with structures and methods described in other embodiments. It can be used in combination.

[0173] (Embodiment 3) In this embodiment, a transistor applicable to the transistor 730 described in Embodiment 1 is An example of this will be described.

[0174] <Transistor configuration example 1> 11A to 11D are a top view and a cross-sectional view of the transistor 730. 11(A) is a top view, and the cross section along the dashed line Y1-Y2 shown in FIG. 11(A) is 11(B), and the cross section in the direction of the dashed line X1-X2 shown in FIG. 11(A) corresponds to FIG. 11(C). The cross section along the dashed line X3-X4 shown in FIG. 11(A) corresponds to FIG. 11(D). In FIGS. 11(A) to 11(D), some elements are enlarged, reduced, or The direction of the dashed line Y1-Y2 is the channel length direction, and the dashed line Y2 is the The direction of the line X1-X2 may be referred to as the channel width direction.

[0175] Note that the channel length is, for example, the length of a semiconductor (or transistor) in a top view of a transistor. The area where the gate electrode overlaps with the semiconductor (the part of the semiconductor through which current flows when the transistor is in the on state). or the source (source region or source electrode) in the region where the channel is formed This refers to the distance between the transistor and the drain (drain region or drain electrode). In a transistor, the channel length does not necessarily have the same value in all regions. The channel length of a transistor may not be determined to a single value. The channel length is one of the values, the maximum value, and the minimum value in the region where the channel is formed. Or the average value.

[0176] The channel width is the width of the semiconductor (or transistor) when it is in the on state. In the region where the gate electrode overlaps with the current flowing part, or in the region where the channel is formed, This refers to the length of the part where the source and drain face each other. In a transistor, the channel width does not necessarily have the same value in all regions. The channel width of a transistor may not be determined to a single value. The channel width is one of the values, the maximum value, and the minimum value in the region where the channel is formed. Or the average value.

[0177] Depending on the structure of the transistor, the channel in the region where the channel is actually formed may be The effective channel width (hereinafter referred to as the effective channel width) and the The channel width (hereinafter referred to as apparent channel width) may differ from the actual channel width. For example, In a transistor having a three-dimensional structure, the effective channel width is The apparent channel width becomes larger than that shown in For example, in a transistor with a fine, three-dimensional structure, The ratio of the channel region formed on the side of the semiconductor to the channel region formed In this case, the apparent channel width shown in the top view may be larger. The effective channel width where the channel is actually formed is larger than the actual channel width.

[0178] In the case of a transistor having a three-dimensional structure, the effective channel width is measured. For example, it may be difficult to estimate the effective channel width from the design value. In order to obtain this, it is necessary to assume that the shape of the semiconductor is known. If is not known accurately, it is difficult to accurately measure the effective channel width.

[0179] Therefore, in this specification, in a top view of a transistor, a semiconductor and a gate electrode are overlapped. The apparent channel length is the length of the area where the source and drain face each other. The channel width is defined as the "surrounded channel width (SCW)". In this specification, when simply referred to as channel width, may refer to enclosed channel width or apparent channel width. In this document, when simply referring to channel width, it may refer to the effective channel width. Channel length, channel width, effective channel width, apparent channel width, enclosure channel The channel width can be determined by acquiring a cross-sectional TEM image and analyzing the image. A value can be determined.

[0180] The field effect mobility of the transistor and the current value per channel width are calculated. In this case, the effective channel width is calculated using the enclosed channel width. The value may differ from that calculated using the channel width.

[0181] The transistor 730 includes a substrate 640, an insulating film 651 on the substrate 640, and a gate insulating film 651 on the insulating film 651. a conductive film 674 formed on the insulating film 651 and the conductive film 674; 6, an insulating film 652 formed on the insulating film 656, a semiconductor 661 formed on the insulating film 652, A stack of a semiconductor 662, a conductive film 671 in contact with the top surface of the semiconductor 662, and The conductive film 672 is in contact with the semiconductor 661, the semiconductor 662, the conductive film 671, and the conductive film 672. a semiconductor 663, an insulating film 653 and a conductive film 673 on the semiconductor 663, and a conductive film 673 An insulating film 654 is formed on the insulating film 653, and an insulating film 655 is formed on the insulating film 654. The semiconductor 661, the semiconductor 662, and the semiconductor 663 are collectively referred to as the semiconductor 660. .

[0182] The conductive film 671 serves as a source electrode of the transistor 730. serves as the drain electrode of the transistor 730.

[0183] The conductive film 673 functions as a first gate electrode of the transistor 730.

[0184] The insulating film 653 functions as a first gate insulating film of the transistor 730.

[0185] The conductive film 674 functions as a second gate electrode of the transistor 730.

[0186] The insulating film 656 and the insulating film 652 function as a second gate insulating film of the transistor 730. Possess the ability.

[0187] The conductive film 674 may be applied with a potential different from that of the conductive film 673, or may be applied with the same potential at the same time. In some cases, the conductive film 674 may be omitted.

[0188] As shown in FIG. 11C, the side surface of the semiconductor 662 is surrounded by a conductive film 673. By adopting this structure, the semiconductor 662 is electrically surrounded by the electric field of the conductive film 673. The electric field of the conductive film (gate electrode) electrically surrounds the semiconductor. The structure of the data is called the surrounded channel (s-channel) structure. Therefore, a channel may be formed in the entire (bulk) of the semiconductor 662. The -channel structure allows a large current to flow between the source and drain of the transistor. In addition, the s-channel structure allows for a high current during conduction (on-state current). Therefore, it is possible to provide a transistor that can operate even at high frequencies.

[0189] The s-channel structure provides a high on-current, making it suitable for LSI (Large Scale Integrated Circuits). Semiconductor devices that require miniaturized transistors, such as LE Integration Since the transistor can be miniaturized, the semiconductor device having the transistor The device can be a highly integrated, high density semiconductor device. The transistor preferably has a channel length of 10 nm or more and less than 1 μm, more preferably 10 nm or more and less than 100 nm, more preferably 10 nm or more and less than 60 nm, It preferably has an area of ​​10 nm or more and less than 30 nm.

[0190] The s-channel structure provides a high on-current, which is required for high frequency operation. This structure is suitable for a transistor. A semiconductor device having such a transistor operates at high frequencies. This makes it possible to provide a semiconductor device that can be fabricated.

[0191] In addition, the s-channel structure provides a high on-state current, making it suitable for use as a power control transistor. The s-channel structure is suitable for power control transistors. In this case, a long channel length is preferable because a high breakdown voltage is required. The channel length of the sintered body is preferably 1 μm or more, more preferably 10 μm or more, and even more preferably It is preferable that the area is 100 μm or larger.

[0192] <<substrate>> The substrate 640 may be, for example, an insulating substrate, a semiconductor substrate, or a conductive substrate. Examples of insulating substrates include glass substrates, quartz substrates, sapphire substrates, and stabilized zirconia substrates. There are various substrates, such as zirconia substrates (yttria-stabilized zirconia substrates), and resin substrates. The substrate may be, for example, a single semiconductor substrate such as silicon or germanium, or a silicon carbide substrate. Silicon, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, gallium oxide Furthermore, there are compound semiconductor substrates made of insulating material. a semiconductor substrate, for example, an SOI (Silicon On Insulator) substrate Conductive substrates include graphite substrates, metal substrates, alloy substrates, and conductive resin substrates. Alternatively, there are substrates having metal nitrides, substrates having metal oxides, etc. Further, there are substrates in which a conductor or a semiconductor is provided on an insulating substrate, and substrates in which a conductor or a semiconductor is provided on a semiconductor substrate. There are substrates with an insulator provided, and substrates with a semiconductor or insulator provided on a conductive substrate. Alternatively, a substrate having elements mounted on it may be used. Examples of the elements include a capacitance element, a resistance element, a switch element, a light-emitting element, and a memory element.

[0193] A flexible substrate may be used as the substrate 640. The method of providing a transistor is to fabricate a transistor on a non-flexible substrate and then Alternatively, the resistor may be peeled off and transferred to a flexible substrate 640. A peeling layer may be provided between the non-flexible substrate and the transistor. Alternatively, a sheet, film, or foil made of woven fibers may be used. The substrate 640 may be stretchable, and may retain its original shape when the bending or pulling is stopped. Alternatively, the substrate 6 may have a property of not returning to its original shape. The thickness of 40 is, for example, 5 μm or more and 700 μm or less, preferably 10 μm or more and 500 μm or less. More preferably, the thickness is 15 μm or more and 300 μm or less. The weight of the semiconductor device can be reduced. Even when using a material with elasticity, it may be possible for the material to return to its original shape when bending or pulling is stopped. Therefore, if the semiconductor device on the substrate 640 is dropped, It is possible to mitigate the impacts and the like that are applied to the semiconductor device. do.

[0194] The flexible substrate 640 may be made of, for example, metal, alloy, resin, glass, or The substrate 640, which is a flexible substrate, can be made of a material having a linear expansion coefficient of 1.0. The lower the coefficient of thermal expansion, the more preferable it is because deformation due to the environment is suppressed. For example, the linear expansion coefficient is 1×10 -3 / K or less, 5×10 -5 / K or less, or 1×1 0 -5 The resin may be, for example, polyester, poly Olefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, Acrylic, polytetrafluoroethylene (PTFE), etc. In particular, aramid is Because of its low expansion coefficient, it is suitable for the substrate 640, which is a flexible substrate.

[0195] <<Undercoating insulating film>> The insulating film 651 has a function of electrically isolating the substrate 640 and the conductive film 674 from each other.

[0196] The insulating film 651 may be made of silicon oxide, silicon nitride, silicon oxynitride, or It is preferable to use a material containing silicon nitride oxide. Alternatively, aluminum oxide, oxide Aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, yttrium oxide nitride Metal oxides such as tritium, hafnium oxide, and hafnium oxynitride can be used. In this specification, an oxynitride is a compound having a higher oxygen content than nitrogen content. Nitrogen oxide refers to a material that contains more nitrogen than oxygen in its composition. Shows.

[0197] The insulating film 651 is formed by a mixture of TEOS or silane, oxygen or nitrous oxide, etc. Alternatively, silicon oxide having good step coverage formed by reacting may be used.

[0198] The insulating film 651 is formed by a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like. sition) method (thermal CVD method, MOCVD (Metal Organic CVD) method , PECVD (Plasma Enhanced CVD) method, etc.), MBE (Mo lecular beam epitaxy) method, ALD (Atomic Layer Deposition) method, or PLD (Pulsed Laser Deposit) In particular, the insulating film may be formed by a CVD method, preferably a plasma CV method. The deposition by the D method is preferable because it can improve the coating property. To reduce damage caused by the deposition, thermal CVD, MOCVD, or ALD is preferred.

[0199] When a semiconductor substrate is used as the substrate 640, the insulating film 651 may be formed of a thermal oxide film. .

[0200] The conductive film 674 may be made of copper (Cu), tungsten (W), molybdenum (Mo), gold (Au), Aluminum (Al), manganese (Mn), titanium (Ti), tantalum (Ta), nickel Ni, chromium (Cr), lead (Pb), tin (Sn), iron (Fe), cobalt (Co) , ruthenium (Ru), platinum (Pt), iridium (Ir), strontium (Sr) Conductive materials containing low-resistivity materials, alloys, or compounds with these as the main components It is preferable to use a single layer or a multilayer of films. In particular, tungsten, which has both heat resistance and conductivity, is preferred. It is preferable to use a high melting point material such as silicon or molybdenum. It is preferable to form the electrode from a low-resistance conductive material such as Cu-Mn alloy. Manganese oxide is formed at the interface with the insulator containing silicon, and the manganese oxide suppresses the diffusion of Cu. It is preferable because it has functionality.

[0201] The conductive film 674 is formed by, for example, a sputtering method, a CVD method (thermal CVD method, MOCVD method), or the like. It can be formed by using a method such as MBE, ALD, or PLD. This can be done.

[0202] The insulating film 652 preferably contains an oxide. Preferably, the oxide material contains more oxygen than the stoichiometric composition. It is preferable to use an oxide containing more oxygen than the oxygen required for the stoichiometric composition. The oxide film containing oxygen is partially released by heating. The oxygen released from the insulating film 652 is The semiconductor 660 is supplied with oxygen, which is an oxide semiconductor, to reduce oxygen vacancies in the oxide semiconductor. As a result, it is possible to suppress fluctuations in the electrical characteristics of the transistor and improve reliability. can be done.

[0203] Oxide films containing more oxygen than the stoichiometric composition, for example, have a TDS (Th Thermal Desorption Spectroscopy (DSS) analysis revealed that the oxygen atoms The converted amount of oxygen desorption is 1.0 x 10 18 atoms / cm 3 Above, preferably 3.0 x10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the film is 100°C or more and 700°C or less, or 100°C or more and 500°C or less. The range is preferred.

[0204] For example, the insulating film 652 is made of a material containing silicon oxide or silicon oxynitride. Alternatively, aluminum oxide, aluminum oxynitride, gallium oxide, oxide Gallium oxide nitride, yttrium oxide, yttrium oxynitride, hafnium oxide, yttrium oxynitride Metal oxides such as hafnium can also be used.

[0205] In order to make the insulating film 652 contain excess oxygen, for example, the insulating film 652 is heated in an oxygen atmosphere. Alternatively, oxygen may be introduced into the insulating film 652 after the film formation to form an insulating film containing excess oxygen. Alternatively, both methods may be combined.

[0206] For example, the insulating film 652 after deposition contains oxygen (at least oxygen radicals, oxygen atoms, and oxygen ions). (including any one of the following) is introduced to form a region containing excess oxygen. These include ion implantation, ion doping, plasma immersion ion implantation, and plasma Zuma processing or the like can be used.

[0207] For the oxygen introduction process, a gas containing oxygen can be used. Examples of the gas containing oxygen include For example, oxygen, nitrous oxide, nitrogen dioxide, carbon dioxide, carbon monoxide, etc. can be used. In the oxygen introduction process, a rare gas may be added to the oxygen-containing gas. For example, a mixed gas of carbon dioxide, hydrogen and argon may be used. stomach.

[0208] After the insulating film 652 is formed, the CMP method or the like is used to improve the flatness of the upper surface. A planarization process may be performed.

[0209] An insulating film 656 may be provided between the conductive film 674 and the insulating film 652. Oxygen contained in the insulating film 652 bonds with metal contained in the conductive film 674, and the insulating film 652 It has the function of preventing the reduction of oxygen contained in the

[0210] The insulating film 656 has a blocking effect against oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. For example, a nitride insulating film may be used as the insulating film 656. The nitride insulating film can be formed of silicon nitride, silicon nitride oxide, aluminum nitride, or the like. Aluminum nitride oxide, etc. Instead of a nitride insulating film, an oxide insulating film may be used. As the oxide insulating film having a blocking effect against oxygen, hydrogen, water, and the like, an oxide insulating film Aluminum, aluminum oxynitride, gallium oxide, gallium oxynitride, yttria Examples include yttrium oxide, yttrium oxynitride, hafnium oxide, and hafnium oxynitride.

[0211] <<semiconductor>> Next, we will explain semiconductors that can be applied to semiconductors such as semiconductor 661, semiconductor 662, and semiconductor 663. do.

[0212] When transistor 730 is in a non-conducting state, a current flows between the source and drain (off Here, a low off-state current is preferably a low off-state current at room temperature. The voltage between the gate and drain is 10 V, and the normalized off-state current per 1 μm of channel width is is 10 x 10 -21 A or less. An example of such a transistor is a transistor including an oxide semiconductor as a semiconductor.

[0213] The semiconductor 662 is, for example, an oxide semiconductor containing indium (In). For example, when indium is contained, the carrier mobility (electron mobility) increases. The conductor 662 preferably contains the element M. The element M is preferably aluminum (Al). , gallium (Ga), yttrium (Y) or tin (Sn). Elements that can be used for element M include boron (B), silicon (Si), titanium (Ti), and iron. (Fe), Nickel (Ni), Germanium (Ge), Zirconium (Zr), Molybdenum Mo, Lanthanum (La), Cerium (Ce), Neodymium (Nd), Hafnium (H f), tantalum (Ta), tungsten (W), etc. However, as for element M, In some cases, it is acceptable to combine multiple elements. For example, element M has a bond energy with oxygen. For example, the bond energy with oxygen is higher than that of indium. Alternatively, the element M may have a function of increasing the energy gap of the oxide semiconductor, for example. The semiconductor 662 preferably contains zinc (Zn). Semiconductors containing zinc may be more likely to crystallize.

[0214] However, the semiconductor 662 is not limited to an oxide semiconductor containing indium. For example, zinc tin oxide, gallium tin oxide, and the like are indium-free and zinc-containing. oxide semiconductors containing gallium, oxide semiconductors containing tin, etc. It's okay.

[0215] The semiconductor 662 is made of, for example, an oxide with a large energy gap. The energy gap is, for example, 2.5 eV or more and 4.2 eV or less, preferably 2.8 eV. The voltage is preferably from 3 eV to 3.8 eV, more preferably from 3 eV to 3.5 eV.

[0216] The semiconductor 662 is preferably a CAAC-OS film, which will be described later.

[0217] For example, the semiconductor 661 and the semiconductor 663 are composed of elements other than oxygen that compose the semiconductor 662. The oxide semiconductor 662 is composed of one or more oxides. Semiconductors 661 and 663 are composed of one or more elements other than silicon. Therefore, the interface between the semiconductor 661 and the semiconductor 662 and the interface between the semiconductor 662 and the semiconductor 663 are Interface states are unlikely to be formed at the interface.

[0218] When the semiconductor 661 is an In-M-Zn oxide, the sum of In and M is 100 atoms. When expressed as ic%, preferably In is less than 50 atomic % and M is 50 atomic %. More preferably, In is less than 25 atomic % and M is more than 75 atomic %. When the semiconductor 661 is formed by sputtering, the sputtering must satisfy the above composition. It is preferable to use a sputtering target. For example, The atomic ratio is preferably In:M:Zn=1:3:2.

[0219] When the semiconductor 662 is an In-M-Zn oxide, the sum of In and M is 100 atoms. When the atomic percentage is ic%, preferably In is higher than 25 atomic % and M is 75 atomic %. c%, more preferably In is higher than 34 atomic % and M is 66 atomic % When the semiconductor 662 is formed by sputtering, the sputtering should satisfy the above composition. It is preferable to use a sputtering target. For example, The atomic ratios were In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M: Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 are preferable. In particular, as a sputtering target, a material having an atomic ratio of In:Ga:Zn=4:2 is preferred. When using In:Ga:Zn=4:4.1, the atomic ratio of the semiconductor 662 to be formed is In:Ga:Zn=4: The ratio may be around 2:3.

[0220] Also, when the semiconductor 663 is an In-M-Zn oxide, the sum of In and M is 100 atoms. When expressed as ic%, preferably In is less than 50 atomic % and M is 50 atomic %. More preferably, In is less than 25 atomic % and M is more than 75 atomic %. The semiconductor 663 may be made of the same oxide as the semiconductor 661. However, the semiconductor 661 and / or the semiconductor 663 may not contain indium. For example, the semiconductor 661 and / or the semiconductor 663 may be gallium oxide. It's okay.

[0221] Next, a semiconductor layer 661, a semiconductor layer 662, and a semiconductor layer 663 are stacked. The function and effect of 660 are explained using the energy band structure diagram shown in Figure 12(B). 12A shows the channel portion of the transistor 730 shown in FIG. Fig. 12(B) shows the energy distribution of the area indicated by the dashed line A1-A2 in Fig. 12(A). 12B shows the energy band structure of the channel of the transistor 730. The energy band structure of the region is shown.

[0222] In Figure 12(B), Ec652, Ec661, Ec662, Ec663, and Ec653 are The insulating film 652, the semiconductor 661, the semiconductor 662, the semiconductor 663, and the insulating film 653 are conductive, respectively. The energy at the bottom of the conductive band is shown.

[0223] Here, the difference between the vacuum level and the energy at the bottom of the conduction band (also called "electron affinity") is The energy difference between the empty level and the top of the valence band (also called the ionization potential) The energy gap is calculated by subtracting the energy gap. The energy difference between the vacuum level and the top of the valence band can be measured using ultraviolet photoelectron spectroscopy. Analysis(UPS:Ultraviolet Photoelectron Spectro It can be measured using a scopy device.

[0224] Since the insulating films 652 and 653 are insulators, Ec653 and Ec652 are It is closer to the vacuum level (has lower electron affinity) than 1, Ec662, and Ec663.

[0225] The semiconductor 662 uses an oxide having a larger electron affinity than the semiconductors 661 and 663. For example, the semiconductor 662 has a higher electron affinity than the semiconductor 661 and the semiconductor 663. 0.07 eV or more and 1.3 eV or less, preferably 0.1 eV or more and 0.7 eV or less, Preferably, an oxide having an electron affinity of 0.15 eV or more and 0.4 eV or less is used. , the energy difference between the vacuum level and the bottom of the conduction band.

[0226] Indium gallium oxide has a small electron affinity and a high oxygen blocking property. Therefore, it is preferable that the semiconductor 663 contains indium gallium oxide. The ratio [Ga / (In+Ga)] is, for example, 70% or more, preferably 80% or more, and Preferably, it is 90% or more.

[0227] At this time, when a gate voltage is applied, the semiconductor 661, the semiconductor 662, and the semiconductor 663 A channel is formed in the semiconductor 662 having a high electron affinity.

[0228] Here, a mixture of the semiconductor 661 and the semiconductor 662 is provided between the semiconductor 661 and the semiconductor 662. In addition, the semiconductor 662 may have a region between the semiconductor 662 and the semiconductor 663. The mixed region may have a low interface state density. Therefore, the stack of semiconductors 661, 662, and 663 has the boundary between each other. In the vicinity of the plane, the band structure is such that the energy changes continuously (also called a continuous junction). do.

[0229] At this time, the electrons are mainly in the semiconductor 662, not in the semiconductor 661 and the semiconductor 663. As described above, the interface between the semiconductor 661 and the semiconductor 662 By lowering the interface state density at the interface between the semiconductor 662 and the semiconductor 663, Therefore, the movement of electrons in the semiconductor 662 is not hindered much, and the on-state current of the transistor is low. The flow can be increased.

[0230] The on-current of a transistor can be increased by reducing the factors that hinder the movement of electrons. For example, if there are no factors that hinder the movement of electrons, it is assumed that electrons will move efficiently. The movement of electrons is also hindered, for example, when the physical unevenness of the channel region is large. do.

[0231] In order to increase the on-current of the transistor, for example, the upper surface or the lower surface ( The root mean square ( RMS (Root Mean Square) roughness is less than 1 nm, preferably 0.6 nm It is preferable that the thickness is less than 0.5 nm, and more preferably less than 0.4 nm. In addition, the average surface roughness (also referred to as Ra) in an area of ​​1 μm×1 μm is preferably less than 1 nm. or less than 0.6 nm, more preferably less than 0.5 nm, and even more preferably less than 0.4 nm Also, the maximum height difference (also called PV) in the range of 1 μm x 1 μm is less than 10 nm, preferably less than 9 nm, more preferably less than 8 nm, The RMS roughness, Ra and PV are measured by SII Nanotechno. Measurements were made using a scanning probe microscope system such as the SPA-500 manufactured by TECHNOLOGY Co., Ltd. This can be done.

[0232] Alternatively, for example, when the density of defect states in the region where the channel is formed is high, the electrons may move. Movement is hindered.

[0233] For example, if the semiconductor 662 has an oxygen vacancy (V O ) at the site of oxygen vacancy. The incorporation of hydrogen atoms can form donor levels. The state in which the element has entered is called V. O It may be written as H. V O H scatters electrons, This causes a decrease in the on-state current of the transistor. The oxygen vacancy site is designed to accommodate hydrogen. Therefore, by reducing the oxygen vacancies in the semiconductor 662, In this case, the on-state current of the transistor can be increased in some cases.

[0234] For example, at a certain depth in the semiconductor 662 or in a certain region of the semiconductor 662, Secondary Ion Mass Spectrometry (SIMS) The hydrogen concentration measured by the ion beam rometry is 1×10 16 atoms / cm 3 That's it, 2x 10 20 atoms / cm 3 Less than 1 × 10 16 atoms / cm 3 That's it, 5 x10 19 atoms / cm 3 Less than 1×10, more preferably 16 atoms / cm 3 Below Top, 1×10 19 atoms / cm 3 or less, more preferably 1 × 10 16 atoms / cm 3 That's it, 5 x 10 18 atoms / cm 3 The following applies.

[0235] In order to reduce oxygen vacancies in the semiconductor 662, for example, excess oxygen contained in the insulating film 652 is , and then move it to the semiconductor 662 via the semiconductor 661. In this case, 661 is preferably an oxygen-permeable layer (a layer that allows oxygen to pass through).

[0236] When the transistor has an s-channel structure, the entire semiconductor 662 is Therefore, the thicker the semiconductor 662, the larger the channel region. That is, the thicker the semiconductor 662 is, the higher the on-state current of the transistor can be.

[0237] In order to increase the on-current of the transistor, the thickness of the semiconductor 663 is preferably as small as possible. The semiconductor 663 is, for example, less than 10 nm, preferably 5 nm or less, and more preferably On the other hand, the semiconductor 663 has a region where a channel is formed. The semiconductor 662 is made up of elements other than oxygen (hydrogen, silicon, etc.) that make up the adjacent insulator. Therefore, the semiconductor 663 has a certain thickness. The semiconductor 663 preferably has a thickness of, for example, 0.3 nm or more, preferably 1 nm. It is sufficient that the semiconductor 6 has a thickness of at least 100 μm, and more preferably at least 2 nm. 63 is an oxygen blocking layer to suppress outward diffusion of oxygen released from the insulating film 652, etc. It is preferable that the material has a blocking property.

[0238] In order to improve reliability, it is preferable that the semiconductor 661 is thick and the semiconductor 663 is thin. The semiconductor 661 has a thickness of, for example, 10 nm or more, preferably 20 nm or more, and more preferably It is sufficient if the semiconductor has a region with a thickness of at least 40 nm, and more preferably at least 60 nm. By increasing the thickness of the semiconductor 661, the channel is formed from the interface between the adjacent insulator and the semiconductor 661. However, the distance to the semiconductor 662 where the hole is formed can be increased. Therefore, the semiconductor 661 is, for example, 200 nm or less, preferably 1 It is sufficient that the region has a thickness of 20 nm or less, more preferably 80 nm or less.

[0239] For example, in SIMS analysis, a 1×1 0 16 atoms / cm 3 That's it, 1 x 10 19 atoms / cm 3Less than 1x, preferably 10 16 atoms / cm 3 That's it, 5 x 10 18 atoms / cm 3 Less than, even more preferred 1×10 16 atoms / cm 3 That's it, 2 x 10 18 atoms / cm 3 Less than In addition, a region having a high concentration of ZnO is formed between the semiconductor 662 and the semiconductor 663 by SIMS. Put, 1×10 16 atoms / cm 3 That's it, 1 x 10 19 atoms / cm 3 less than, Preferably 1 x 10 16 atoms / cm 3 That's it, 5 x 10 18 atoms / cm 3 less than , and more preferably 1 × 10 16 atoms / cm 3 That's it, 2 x 10 18 atoms / c m 3 The silicon concentration is less than 1000 .mu.m.

[0240] In addition, in order to reduce the hydrogen concentration in the semiconductor 662, the hydrogen concentration in the semiconductor 661 and the semiconductor 663 is It is preferable to reduce the element concentration. 1×10 16 atoms / cm 3 That's it, 2 x 10 20 atoms / cm 3 The following is preferably is 1 x 10 16 atoms / cm 3 That's it, 5 x 10 19 atoms / cm 3 Below, more preferred Preferably 1 x 10 16 atoms / cm 3 That's it, 1 x 10 19atoms / cm 3 below, More preferably, 1 × 10 16 atoms / cm 3 That's it, 5 x 10 18 atoms / cm 3 In addition, in order to reduce the nitrogen concentration of the semiconductor 662, It is preferable to reduce the nitrogen concentration in the semiconductor 661 and the semiconductor 663. and Semiconductor 663, SIMS, 1 × 10 16 atoms / cm 3 That's it, 5 x 10 19 atoms / cm 3 Less than 1 x 10 16 atoms / cm 3 That's it, 5 x 1 0 18 atoms / cm 3 Less than 1×10, more preferably 16 atoms / cm 3 That's all, 1×10 18 atoms / cm 3 or less, more preferably 1 × 10 16 atoms / cm 3 That's it, 5 x 10 17 atoms / cm 3 The nitrogen concentration ranges as follows:

[0241] The three-layer structure described above is an example. For example, a two-layer structure without semiconductor 661 or semiconductor 663 Alternatively, the semiconductor 661 may be disposed above or below the semiconductor 663. Any of the semiconductors exemplified below as semiconductor 661, semiconductor 662 and semiconductor 663. Alternatively, a four-layer structure having one layer above the semiconductor 661 and one layer below the semiconductor 661 may be used. , the semiconductor 661, the semiconductor 662, and the semiconductor 663 are disposed in two or more places. 662 and semiconductor 663. An n-layer structure (n is 5 It is also acceptable to use an integer equal to or greater than 1.

[0242] Conductive Film The conductive film 671, the conductive film 672, and the conductive film 673 are made of copper (Cu), tungsten (W), molybdenum (Mo), or the like. Ribdenum (Mo), gold (Au), aluminum (Al), manganese (Mn), titanium (T i), Tantalum (Ta), Nickel (Ni), Chromium (Cr), Lead (Pb), Tin (Sn) , iron (Fe), cobalt (Co), ruthenium (Ru), platinum (Pt), iridium (I r), strontium (Sr), or alloys made of low-resistivity materials, or It is preferable to use a single layer or a multilayer of a conductive film containing a compound having the following as a main component. It is preferable to use a high melting point material such as tungsten or molybdenum, which has both high thermal conductivity and high thermal conductivity. It is also preferable to form the wiring board from a low-resistance conductive material such as aluminum or copper. When a Cu-Mn alloy is used, manganese oxide is formed at the interface with the insulator containing oxygen, and the oxidation Manganese is preferable because it has the function of suppressing the diffusion of Cu.

[0243] The conductive films 671 and 672 are formed of iridium oxide, ruthenium oxide, strontium oxide, or the like. It is preferable to use conductive oxides containing noble metals, such as ruthenium ruthenium. The conductive oxide hardly takes oxygen from the oxide semiconductor even when it comes into contact with the oxide semiconductor. It is difficult to create oxygen vacancies in semiconductors.

[0244] The conductive films 671, 672, and 673 are formed by, for example, a sputtering method, a CV method, or the like. D method (including thermal CVD method, MOCVD method, PECVD method, etc.), MBE method, ALD method, or It can be formed by using a PLD method or the like.

[0245] <<Gate insulating film>> The insulating film 653 may be made of aluminum oxide, magnesium oxide, silicon oxide, silicon oxynitride, or the like. Silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide Sodium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide and thorium oxide The insulating film 653 can be formed of an insulating film containing one or more of the above materials. The insulating film 653 may be a layer containing lanthanum (La), nitrogen, and zirconium (Z). r) may be contained as impurities.

[0246] An example of a stacked structure of the insulating film 653 will be described. , nitrogen, silicon, hafnium, etc. Specifically, hafnium oxide and It preferably contains silicon or silicon oxynitride.

[0247] Hafnium oxide has a higher dielectric constant than silicon oxide and silicon oxynitride. Therefore, compared with the case where silicon oxide is used, the thickness of the insulating film 653 can be made larger. In other words, it is possible to reduce the leakage current due to the transistor with a small off-state current. It is possible to realize the star.

[0248] Protective insulating film The insulating film 654 is a blocking material for oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. The insulating film 654 prevents oxygen from diffusing from the semiconductor 660 to the outside. This prevents hydrogen, water, etc. from entering the semiconductor 660 from the outside.

[0249] The insulating film 654 is formed by, for example, a sputtering method, a CVD method (thermal CVD method, MOCVD method, PE It can be formed by using a method such as CVD, MBE, ALD, or PLD. In particular, when the insulating film is formed by a CVD method, preferably a plasma CVD method, This is preferable because it can improve the coating property. The method is preferably a thermal CVD method, an MOCVD method or an ALD method.

[0250] The insulating film 654 can be, for example, a nitride insulating film. Examples include silicon nitride, silicon nitride oxide, aluminum nitride, and aluminum nitride oxide. Note that instead of the nitride insulating film, a film having a blocking effect against oxygen, hydrogen, water, and the like may be used. An oxide insulating film may be provided. The oxide insulating film may be formed of aluminum oxide, aluminum oxynitride, or the like. Aluminum, Gallium Oxide, Gallium Oxide Nitride, Yttrium Oxide, Yttrium Oxide Nitride , hafnium oxide, hafnium oxynitride, etc.

[0251] The aluminum oxide film is permeable to both impurities such as hydrogen and moisture, and oxygen. It is preferable to apply it to the insulating film 654 because it has a high blocking effect that prevents the film from being exposed to the air. The oxygen contained in the silicon film can be diffused into the semiconductor 660 .

[0252] After the insulating film 654 is formed, heat treatment is preferably performed. 52 etc. to supply oxygen to the semiconductor 660, thereby reducing oxygen vacancies in the semiconductor 660. At this time, oxygen released from the insulating film 652 is transferred to the insulating film 656 and the insulating film 657. 654, the oxygen can be effectively trapped. Therefore, the amount of oxygen that can be supplied to the semiconductor 660 can be increased, and the amount of oxygen in the semiconductor 660 can be increased. The defects can be effectively reduced.

[0253] Subsequently, an insulating film 655 is formed. The insulating film 655 is formed by, for example, a sputtering method or a CVD method. (including thermal CVD, MOCVD, PECVD, etc.), MBE, ALD or PL In particular, the CVD method, preferably the plasma CVD method, can be used to form the insulating film. It is preferable to form the film by the plasma method, since it is possible to obtain good coating properties. To reduce damage caused by ions, thermal CVD, MOCVD, or ALD methods are preferred. In addition, when an organic insulating material such as an organic resin is used as the insulating film 655, the insulating film 655 is formed by spin coating. Alternatively, after the insulating film 655 is formed, a coating method such as a coating method may be used. It is preferable to perform a planarization process.

[0254] The insulating film 655 may be made of aluminum oxide, aluminum nitride oxide, magnesium oxide, or oxide. Silicon, silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, gallium oxide Rumanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, oxide An insulator containing one or more selected from hafnium, tantalum oxide, and the like can be used. The insulating film 655 may be made of a material such as polyimide resin, polyamide resin, acrylic resin, or siloxane. Organic resins such as resin, epoxy resin, and phenol resin can also be used. 655 may be a laminate of the above materials.

[0255] <Transistor configuration example 2> In the transistor 730 shown in FIG. 11, when the conductive film 673 is formed by etching, a semiconductor The body 663 and the insulating film 653 may be etched simultaneously. An example is shown in FIG.

[0256] 13 shows that the semiconductor 663 and the insulating film 664 are formed only under the conductive film 673 in FIG. 11(B). 53 exists.

[0257] <Transistor configuration example 3> In the transistor 730 shown in FIG. 11, the conductive film 671 and the conductive film 672 are The side surface of the semiconductor 662 may be in contact with the side surface of the semiconductor 662. An example is shown in FIG.

[0258] FIG. 14 shows a structure in which the conductive film 671 and the conductive film 672 are disposed on the semiconductor 661 side in FIG. In this case, the surface of the semiconductor 662 is in contact with the surface of the semiconductor 662 and the side surface of the semiconductor 662 .

[0259] <Transistor configuration example 4> In the transistor 730 shown in FIG. 11, the conductive film 671 is The conductive film 672 may have a stacked structure of the conductive film 672a and the conductive film 672b. An example of the laminated structure shown in FIG.

[0260] FIG. 15 shows a case where the conductive film 671 in FIG. 11B is a conductive film 671a and a conductive film 671b. The conductive film 672 has a stacked structure of a conductive film 672a and a conductive film 672b. This is the case.

[0261] The conductive film 671b and the conductive film 672b may be made of, for example, a transparent conductor, an oxide semiconductor, or a nitride semiconductor. A nitride semiconductor or an oxynitride semiconductor may be used. Examples of b include a film containing indium, tin, and oxygen, a film containing indium and zinc, and films containing indium, tungsten and zinc, films containing tin and zinc, films containing zinc and a film containing zinc and gallium, a film containing zinc and aluminum, a film containing zinc and fluorine, Films containing zinc and boron, films containing tin and antimony, films containing tin and fluorine Alternatively, a film containing titanium and niobium may be used. The gas may contain hydrogen, nitrogen, silicon, germanium, or argon.

[0262] The conductive film 671b and the conductive film 672b may have a property of transmitting visible light. Alternatively, the conductive film 671b and the conductive film 672b may be irradiated with visible light, ultraviolet light, infrared light, or X-rays. It is also acceptable for the material to have the property of not transmitting radiation by reflecting or absorbing it. By having such a quality, it may be possible to suppress fluctuations in the electrical characteristics of a transistor due to stray light.

[0263] The conductive films 671b and 672b have a Schottky barrier between the semiconductor 662 and the like. It may be preferable to use a layer that does not form a barrier. The switching characteristics can be improved.

[0264] The conductive film 671a and the conductive film 672a may contain, for example, boron, nitrogen, oxygen, fluorine, Silicon, phosphorus, aluminum, titanium, chromium, manganese, cobalt, nickel, copper, Zinc, gallium, yttrium, zirconium, molybdenum, ruthenium, silver, indium Conductors containing one or more of aluminum, tin, tantalum and tungsten are used in a single layer or multilayer. For example, an alloy film or a compound film may be used, and a conductor containing aluminum, Conductors containing copper and titanium, conductors containing copper and manganese, conductors containing indium, tin and Conductors containing oxygen, conductors containing titanium and nitrogen, etc. may also be used.

[0265] The conductive films 671b and 672b are thicker than the conductive films 671a and 672a. In some cases, it may be preferable to use a film with a higher resistance than the conductive film 671b. It may be preferable to use a film with lower resistance than the transistor channel for 2b. For example, the resistivity of the conductive film 671b and the conductive film 672b is set to 0.1 Ωcm or more and 100 Ωcm or more. The lower limit is 0.5Ωcm to 50Ωcm, or 1Ωcm to 10Ωcm. By setting the resistivity of the conductive film 671b and the conductive film 672b in the above range, the channel This can reduce the electric field concentration at the boundary between the transistor and the drain. This reduces the fluctuation of the electrical characteristics of the transistor due to the electric field generated from the drain. Therefore, it is possible to reduce the punch-through current due to the short channel length. Even in this case, the saturation characteristics can be improved. If the circuit configuration does not require the conductive film 671b or the conductive film 672b, For example, it may be preferable to place the capacitor on the drain side.

[0266] Crystal structure of oxide semiconductor Next, the crystal structure of an oxide semiconductor that can be used for the semiconductor 662 will be described.

[0267] In this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Approximately parallel" means that two straight lines are arranged at an angle of between -30° and 30°. Also, "perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes the case where the angle is between 85° and 95°. refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0268] In this specification, when the crystal is a trigonal or rhombohedral crystal, it is expressed as a hexagonal crystal system. .

[0269] Oxide semiconductor films are classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. Alternatively, oxide semiconductors can be divided into, for example, crystalline oxide semiconductors and amorphous oxide semiconductors. do.

[0270] Note that as a non-single-crystal oxide semiconductor, CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor, polycrystalline oxide Semiconductors, microcrystalline oxide semiconductors, amorphous oxide semiconductors, etc. The materials include single-crystalline oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and microcrystalline oxides. Semiconductors, etc.

[0271] First, the CAAC-OS film will be described.

[0272] The CAAC-OS film is one of oxide semiconductor films having a plurality of crystal parts aligned along the c-axis.

[0273] Transmission Electron Microscope (TEM) A bright-field image and a combined analysis image of the diffraction pattern of the CAAC-OS film were obtained by using a microscope. By observing the TEM image, multiple crystalline regions can be identified. On the other hand, high-resolution TEM images also reveal clear boundaries between crystalline parts, i.e., grain boundaries. Therefore, the CAAC-OS film is It can be said that the decrease in electron mobility caused by grain boundaries is unlikely to occur.

[0274] When a high-resolution TEM image of the cross section of the CAAC-OS film was observed from a direction approximately parallel to the sample surface, It can be seen that the metal atoms are arranged in layers in the crystalline part. Each layer of metal atoms is The CAAC-OS film is formed on a surface (also called a surface to be formed) or on a surface that reflects the unevenness of the surface. The CAAC-OS film has a shape and is aligned parallel to the surface on which the film is formed or the upper surface.

[0275] On the other hand, a high-resolution TEM image of the plane of the CAAC-OS film was observed from a direction approximately perpendicular to the sample surface. It was confirmed that the metal atoms in the crystals were arranged in a triangular or hexagonal shape. However, there is no regularity in the arrangement of metal atoms between different crystal parts.

[0276] X-ray diffraction (XRD) was performed on the CAAC-OS film. For example, a CAAC-OS film with InGaZnO4 crystals was found by structural analysis using the device. In the out-of-plane analysis, a peak was observed at a diffraction angle (2θ) of approximately 31°. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have a c-axis orientation, and the c-axis is approximately aligned on the surface on which the film is formed or on the upper surface. You can see that it is oriented vertically.

[0277] In addition, the out-of-plane method of CAAC-OS film with InGaZnO4 crystals In the analysis by , in addition to the peak at 2θ around 31°, a peak also appeared at 2θ around 36°. The peak at 2θ around 36° is due to the presence of c-axis orientation in some parts of the CAAC-OS film. The CAAC-OS film contains crystals that do not have a 2θ of around 31°. It is preferable that the peak is exhibited at 2θ of about 36° and that the peak is not exhibited at 2θ of about 36°.

[0278] The CAAC-OS film is an oxide semiconductor film with a low concentration of impurities. These are elements other than the main components of the oxide semiconductor film, such as silicon and transition metal elements. The elements that bond to oxygen more strongly than the metal elements that constitute the oxide semiconductor film, such as fluorine, By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disrupted, reducing its crystallinity. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide have an atomic radius (or molecular radius) is large, and when it is contained inside the oxide semiconductor film, The impurities contained in the oxide semiconductor film are likely to disturb the atomic arrangement and cause a decrease in crystallinity. Objects can act as carrier traps or carrier sources.

[0279] The CAAC-OS film is an oxide semiconductor film with a low density of defect states. Oxygen vacancies in the semiconductor film can become carrier traps or trap hydrogen, It can be a source of carrier generation.

[0280] Low impurity concentration and low defect level density (low oxygen vacancies) are called high purity intrinsic or The term "substantially highly purified intrinsic" refers to a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film. Since there are fewer carrier generation sources, the carrier density can be reduced. The transistor using the oxide semiconductor film has electrical characteristics ( It is also called normally-on.) It is rare for it to become a high-purity intrinsic or substantially high-purity The intrinsic oxide semiconductor film has few carrier traps. Transistors using this film have little fluctuation in electrical characteristics and are highly reliable. Note that it takes time for the charges trapped in the carrier traps in the oxide semiconductor film to be released. The impurity concentration is high and the charge is stable for a long time, so the charge may behave like a fixed charge. Therefore, a transistor using an oxide semiconductor film with a high density of defect states has unstable electrical characteristics. This may occur.

[0281] In addition, transistors using CAAC-OS films show improved electrical characteristics when irradiated with visible light or ultraviolet light. The fluctuation is small.

[0282] Next, a microcrystalline oxide semiconductor film will be described.

[0283] The microcrystalline oxide semiconductor film has a region where crystals can be confirmed in a high-resolution TEM image. The microcrystalline oxide semiconductor film has a crystal structure including a crystal region and a crystal region where no clear crystal part can be identified. The crystal part contained in the crystal has a size of 1 nm to 100 nm or 1 nm to 10 nm. In particular, the fine particles are often between 1 nm and 10 nm, or between 1 nm and 3 nm. The oxide semiconductor film having nanocrystals (nc) is called nc -OS(nanocrystalline oxide semiconductor) In addition, the nc-OS film has clearly defined grain boundaries in high-resolution TEM images. It may not be possible to recognize it.

[0284] The nc-OS film is a microscopic region (e.g., a region of 1 nm to 10 nm, especially a region of 1 nm or more). The nc-OS film has a periodic atomic arrangement in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystal parts. Therefore, no orientation is observed throughout the film. Therefore, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on the analysis method. For example, X-ray diffraction (XR) using X-rays with a diameter larger than that of the crystals is used for nc-OS films. When structural analysis is performed using the D device, the crystal plane is In addition, the peaks indicating the probes larger than the crystalline part were not detected in the nc-OS film. Electron diffraction (also called selected area electron diffraction) using an electron beam with a diameter (for example, 50 nm or more) When the diffraction pattern is changed to 0.05μm, a halo-like diffraction pattern is observed. Nanobeam electrons are used, which use an electron beam with a probe diameter close to or smaller than the size of the crystal part. When diffraction is performed, spots are observed. If you do this, you may observe a circular (ring-shaped) area of ​​high brightness. When nanobeam electron diffraction was performed on the nc-OS film, multiple spots were observed within the ring-shaped region. It may be observed.

[0285] The nc-OS film is an oxide semiconductor film with higher order than an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. In the nc-OS film, there is no regularity in the crystal orientation between different crystal parts. The S film has a higher defect state density than the CAAC-OS film.

[0286] Next, the amorphous oxide semiconductor film will be described.

[0287] The amorphous oxide semiconductor film has an irregular atomic arrangement in the film and is an oxide film that does not have a crystalline portion. An example is an oxide semiconductor film that has an amorphous state, such as quartz.

[0288] In the amorphous oxide semiconductor film, no crystalline portion can be confirmed in a high-resolution TEM image.

[0289] When the structure of the amorphous oxide semiconductor film is analyzed using an XRD device, out-of-p In the analysis by the Lane method, no peaks indicating crystal planes were detected. When electron diffraction is performed on a conductive film, a halo pattern is observed. When nanobeam electron diffraction is performed on a conductive film, no spots are observed, and a halo pattern is observed. Observed.

[0290] The oxide semiconductor film has a structure that exhibits physical properties between the nc-OS film and the amorphous oxide semiconductor film. An oxide semiconductor film having such a structure may be used, particularly, for amorphous-like oxidation. Amorphous-like Oxide Semiconductor (a-like OS) The membrane is called a conductor membrane.

[0291] In the a-like OS film, voids are observed in high-resolution TEM images. In addition, crystals can be clearly seen in high-resolution TEM images. The a-like OS film has a region where the crystal part is not observed and a region where the crystal part is not observed. Crystallization occurs due to the small amount of electron irradiation, which is the level observed with a TEM, and the growth of the crystals can be seen. On the other hand, if the nc-OS film is of good quality, the small amount of charge observed by TEM can be detected. Almost no crystallization due to electron irradiation is observed.

[0292] The size of the crystalline parts of the a-like OS film and the nc-OS film was measured using a high-resolution T This can be done using EM images. For example, InGaZnO4 crystals have a layered structure, There are two Ga-Zn-O layers between the In-O layers. The structure has three In-O layers and six Ga-Zn-O layers, for a total of nine layers aligned in the c-axis direction. Therefore, the spacing between these adjacent layers is The lattice spacing (also called the d value) is approximately the same as the value of 0.29 nm from crystal structure analysis. Therefore, we focused on the lattice fringes in high-resolution TEM images and calculated the spacing between the lattice fringes. In the region where the distance is between 0.28 nm and 0.30 nm, each lattice fringe is InG aIt corresponds to the ab plane of the ZnO4 crystal.

[0293] In addition, the density of an oxide semiconductor film may differ depending on the structure. If the composition of the membrane is known, the density can be determined by comparing it with that of a single crystal with the same composition. The structure of the oxide semiconductor film can be estimated. The density of the OS-like film is 78.6% or more and less than 92.3%. The density of the nc-OS film and the CAAC-OS film was 92.3% or more. Note that an oxide semiconductor film having a density of less than 78% of the density of a single crystal is The film formation itself is difficult.

[0294] The above will be explained using a specific example. For example, In:Ga:Zn=1:1:1 [atomic In the oxide semiconductor film that satisfies the numerical ratio, single crystal InGaZnO4 with a rhombohedral crystal structure The density of 3Therefore, for example, In:Ga:Zn=1:1:1 In an oxide semiconductor film that satisfies the atomic ratio, the density of the a-like OS film is 5.0g / cm 3 More than 5.9g / cm 3 For example, In:Ga:Zn=1:1: In the oxide semiconductor film satisfying the atomic ratio of 1, the density and CAAC- The density of the OS film is 5.9 g / cm 3 More than 6.3g / cm 3 It will be less than.

[0295] In some cases, single crystals with the same composition do not exist. In such cases, crystals with different compositions at any ratio are used. By combining single crystals, it is possible to calculate the density corresponding to a single crystal of the desired composition. The density of a single crystal of a desired composition can be determined by the ratio of the single crystals of different compositions combined. However, the density should be calculated using as few types of single crystals as possible. It is preferable to calculate them in combination.

[0296] The oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, an a-like OS film, or a finely crystalline oxide semiconductor film. The film may be a stacked film including two or more of a crystalline oxide semiconductor film and a CAAC-OS film.

[0297] The structures and methods described in this embodiment may be combined as appropriate with structures and methods described in other embodiments. It can be used in combination.

[0298] (Fourth embodiment) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to FIGS.

[0299] 16(A) to 16(F) are diagrams showing electronic devices. These electronic devices are 5000, display unit 5001, speaker 5003, LED lamp 5004, operation key 500 5 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 ( , displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, Sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or one that includes a function for measuring infrared rays), a microphone 5008, etc. Cut.

[0300] FIG. 16(A) shows a mobile computer, which includes, in addition to the above components, a switch 5009, It may have an infrared port 5010, etc. FIG. 16(B) shows a portable device equipped with a recording medium. A type of image reproducing device (for example, a DVD reproducing device), which, in addition to the above, also has a second display 16C shows a GOG In addition to the above, the display includes a second display unit 5002, a support unit 5012, The game machine may have earphones 5013, etc. FIG. 16(D) is a portable game machine. In addition to the above, it may have a recording medium reading unit 5011, etc. It is a digital camera with a TV receiving function, and in addition to the above, it has an antenna 5014, a shutter The mobile phone may have a trigger button 5015, an image receiving unit 5016, etc. In addition to the above, it is a type gaming machine that includes a second display unit 5002, a recording medium reading unit 5011, etc.

[0301] The electronic devices shown in Figures 16(A) to 16(F) can have various functions. For example, functions to display various information (still images, videos, text images, etc.) on the display, Panel function, calendar, date or time display function, various software (program The function of controlling processing by the program, wireless communication function, and various computer Functions for connecting to computer networks, and for transmitting or receiving various data using wireless communication functions. The function of reading out the program or data recorded on the recording medium and displaying it on the display unit. Furthermore, in an electronic device having a plurality of display units, One display unit mainly displays image information, and the other display unit mainly displays text information. The function to display images that take into account parallax on multiple displays to create a three-dimensional image. Furthermore, in electronic devices having an image receiving unit, It has the functions of taking still images, taking videos, and correcting the captured images automatically or manually. function to save the captured images to a recording medium (external or built-in to the camera); The display device can have a function of displaying an image on a display unit, etc. The functions that the electronic device shown in (F) can have are not limited to these, and it can have various functions. It is possible.

[0302] The electronic device described in this embodiment is a wireless device that has a plurality of built-in power storage elements and can be wirelessly charged. It is characterized by having a receiving unit.

[0303] 17(A) and 17(B) will be used to explain examples of the electronic device.

[0304] FIG. 17(A) shows an example in which an information terminal is operated inside a moving object such as a car.

[0305] 5103 is a handle and has an antenna inside. The electronic device 5100 can be configured to supply power from a power source. The handle has elements, at least one of which is charged by wireless charging. A jig for fixing the electronic device 5100 to the handle 5103 may be provided. By attaching the electronic device 5100 to the In addition, voice authentication is performed using a microphone installed in the electronic device 5100, and the driver's voice is used to You can also drive a car.

[0306] For example, the electronic device 5100 can be operated while the vehicle is stopped to display location information on the display unit 5102. In addition, information that is not displayed on the display unit 5101 of the car, such as engine speed, The steering angle, temperature, tire pressure, etc. may be displayed on the display unit 5102. 102 has a touch input function. It also uses one or more cameras to capture the outside of the vehicle. The situation outside the vehicle can be displayed on the display unit 5102, and it can also be used as a rear monitor, for example. In addition, to prevent drowsy driving, the system can send information such as driving speed from the car. The driver receives the signal wirelessly and monitors the vehicle speed while driving. If the eyes are closed for a long time, the electronic device 5100 will vibrate or sound a warning sound. The driver can select the appropriate setting, such as whether to play music or not. The driver's image recording is stopped to save power, and the electronic device 5100 is wirelessly charged while the vehicle is stopped. The element may be capable of being charged.

[0307] As described above, various uses are possible for vehicles such as automobiles, and the electronic device 5100 In order to provide these various functions, many sensors and multiple antennas are built in. Although a vehicle such as a car has a power source, it has limitations. Considering power consumption, it is important to keep the power used by the electronic device 5100 as low as possible. It is preferable that the driving distance of an electric vehicle is determined by the power consumption of the electronic device 5100. Even if the electronic device 5100 has various functions, it may not be possible to Use only one or two features when necessary. A power storage element is prepared for each function, and various power storage elements are provided in the electronic device 5100. If you want to have various functions, you can turn on only the functions you want to use and correspond to each function. Power can be saved by supplying power from multiple storage elements. The storage element corresponding to the stopped function can be wirelessly charged from an antenna installed in the vehicle. can be done.

[0308] FIG. 17(B) shows an example of operating an information terminal inside an airplane or the like. On board, there may be restrictions on the time that personal information devices can be used, and If the flight is between flights, it is desirable to be able to use the information terminals on the plane.

[0309] The electronic device 5200 has a display unit 5202 that displays images such as movies, games, and advertisements. It is an information terminal that can obtain flight position, arrival time, etc. in real time through communication functions. The display portion 5202 has a touch input function.

[0310] In addition, the electronic device 5200 is fitted into a recess provided in the sheet 5201, and the electronic device 5200 The antenna installation part 5203 is provided at the position where it overlaps with the 0, and wireless charging is possible while it is inserted. In addition, the electronic device 5200 can be used by users to notify the crew of illness or other issues. It can also function as a telephone or communication tool. If the driver has the electronic device 5200, even if the driver speaks a different language, the display unit 5200 of the electronic device 5200 can 202. Also, different languages ​​of neighboring countries can be communicated. The passengers can communicate with each other using the display unit 5202 of the electronic device 5200. For example, while the passenger is sleeping, the display unit 5202 may display a message saying "Please do not wake me up." It can also function as a message board, for example by continuously displaying "Please inform us" in English.

[0311] The electronic device 5200 has a plurality of power storage elements for each function. Only the functions you want to use are turned on, and the functions you don't use are turned off, saving power. Furthermore, among the multiple storage elements, the storage element corresponding to the stopped function is , and can be wirelessly charged from the antenna installation portion 5203.

[0312] In addition, it is difficult to bring dangerous items on board an aircraft, and The electronic device 5200 is highly safe and has a small size, so even if one storage element explodes, This minimizes damage caused by breakdowns, explosions, or destruction. Even if one storage element becomes unusable, the electronic device 5200 can be used by using other storage elements. Some of the functions can be used.

[0313] In addition, if there is a problem with the aircraft's power system, the electronic devices in each of the multiple seats will Multiple storage elements of 00 may be designed for emergency use. All of the 5200 electronic devices are the same product and have the same design, so they can be used as emergency power sources. The system may be constructed so that the devices can be connected in series.

[0314] The electronic device 5200 includes a plurality of small power storage elements, such as lithium polymer batteries. lithium-ion secondary battery, lithium-ion capacitor, electric double layer capacitor, redox Any one or more types of capacitors can be used.

[0315] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can.

[0316] (Embodiment 5) In this embodiment, an example of an artificial organ which is one embodiment of the present invention will be described.

[0317] FIG. 18 is a schematic cross-sectional view showing an example of a pacemaker.

[0318] The pacemaker main body 5300 includes power storage elements 5301a and 5301b, a regulator, and a control A control circuit, an antenna 5304, a wire 5302 to the right atrium, and a wire 5303 to the right ventricle. and at least

[0319] The pacemaker body 5300 is placed in the body by surgery, and the two wires are inserted into the subclavian cavity of the human body. One wire tip is inserted into the right ventricle and the other wire tip is inserted into the right atrium through the vein 5305. to be installed.

[0320] In addition, the antenna 5304 can receive power, and the power is transferred to the plurality of power storage elements 5301a, 5302a, 5303a, 5304b, 5305a, 5306a, 5307a, 5308a, 5309a, 5309b, 5301c, 5301d, 5301e, 5301f, 53 01b, which reduces the frequency of pacemaker replacement. Since the body 5300 has multiple storage elements, it is highly safe and even if one of them fails, Since the other one can function, it also functions as an auxiliary power source. If the power storage element in the power supply is divided into multiple thin power storage elements, it will be possible to It is mounted on a printed circuit board where the control circuit is installed, making the pacemaker body 5300 smaller and The thickness of the pacemaker body 5300 can be reduced.

[0321] In addition to the antenna 5304 that can receive power, an antenna that can transmit physiological signals is provided. For example, physiological signals such as pulse, respiratory rate, heart rate, and body temperature may be monitored by an external monitor. The system may be configured to monitor cardiac activity such that it can be seen at the device.

[0322] If this embodiment can achieve miniaturization and thinning, the pacemaker main body 5300 can be embedded. This makes it possible to reduce the size of protrusions that occur in crowded areas to an inconspicuous level.

[0323] This method of installing a pacemaker is just one example, and there are various types depending on the heart disease. This may be the case.

[0324] Furthermore, the present embodiment is not limited to pacemakers. There is a cochlear implant as an artificial organ. A cochlear implant converts sound into an electrical signal and transmits it to a stimulator placed inside the cochlea. This device directly stimulates the auditory nerve.

[0325] There are two types of cochlear implants: the first type is implanted deep in the ear through surgery, and the second type is implanted to pick up sound with a microphone. The first device and the second device are electrically connected. The first device converts sound into electricity. The device has at least an antenna for receiving a signal and a wire that reaches the cochlea. The device includes an audio processor for converting sound into an electrical signal and a receiver for transmitting the electrical signal to the first device. and a transmitting circuit for receiving the signal.

[0326] In this embodiment, by providing small-sized power storage elements in both the first device and the second device, The cochlear implant can be made smaller.

[0327] Furthermore, cochlear implants are often surgically implanted during childhood, so there is a demand for them to be smaller.

[0328] If the cochlear implant can be miniaturized by this embodiment, it will be possible to generate a sound at the place where the cochlear implant is implanted. This allows the protrusions to be made less noticeable.

[0329] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can.

[0330] (Sixth embodiment) In this embodiment, an example of a wearable electronic device which is one embodiment of the present invention will be described.

[0331] When making an electronic device with a complex external shape, multiple small energy storage elements are appropriately arranged in predetermined locations. This allows for greater freedom in the design of electronic devices. The electronic device 5400 is cylindrical and has more than one storage element for wearing on the human body. By dividing it into multiple storage elements and arranging them appropriately, the weight can be reduced. If many functions are provided, the consumption of the storage element during standby will increase, so it is recommended to provide a storage element for each function. When the electronic device 5400 having a plurality of power storage elements is to have various functions, Only the functions you want to use are turned on, and power is supplied from the storage element that corresponds to each function. This will help save energy.

[0332] As shown in FIG. 19(A), the electronic device 5400 is attached to the upper arm of the left arm. Clothing 5401 includes sleeves of military uniforms, protective clothing, suits, uniforms, space suits, etc. There is no particular limit to how it can be worn, but it can be worn on clothes that overlap the upper arm. It can be attached by sewing or by attaching Velcro (registered trademark) to clothing that overlaps the upper arm. A method of attaching the electronic device 5400 by providing a band or a clasp, a method of fixing the electronic device by a band or a clasp, One method involves wrapping the spring around a leaf spring.

[0333] The electronic device 5400 has an antenna, and is worn on the skin. FIG. 19(B) shows a perspective view of the device during wireless charging. The electronic device 5400 is attached to the skin 402. It is preferable to use skin-friendly films or natural materials such as leather, paper, and cloth for surfaces that come into contact with the skin. Also, 5412 is a power transmission device, which transmits power to the electronic device 5400 using radio waves 5413. The electronic device 5400 can be charged wirelessly by using the By providing an antenna or circuit that can transmit and receive information other than the above, it is possible to transmit and receive other information. For example, the electronic device 5400 can be used like a smartphone.

[0334] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can.

[0335] (Embodiment 7) In this embodiment, an example of an electronic device to which one embodiment of the present invention can be applied will be described with reference to FIGS. This article explains:

[0336] FIG. 20(A) is a top view of the eyeglass-type device 5500, and FIG. 20(B) is a perspective view thereof.

[0337] The eyeglass-type device 5500 has a portion that is placed along the temporal region of the user's head when worn, hereinafter referred to as the "temporal region." Although they are called pull parts, each of the left and right temple parts has a plurality of storage elements 5501 .

[0338] The eyeglass-type device 5500 may also have a terminal portion 5504. The power storage elements 5501 can be charged from the power storage elements 5501. It is preferable that the power storage elements 5501 are electrically connected to each other. All the power storage elements 5501 can be charged from one terminal portion 5504 .

[0339] The eyeglass-type device 5500 may also have a display unit 5502. A control unit 5503 controls charging and discharging of the power storage element 5501. The control unit 5503 can generate image data to be displayed on the display unit 5502. By incorporating a chip with wireless communication capabilities, data can be sent and received from the outside.

[0340] As shown in the top view of FIG. 20(C), the glasses-type device 5502 does not have a display portion 5502. The glasses-type device 5510 may be equipped with an external display unit 5512. By attaching an external display unit 5512 to the glasses-type device 5510, This makes it easy to adjust the distance between the user's eyes and the display unit 5512.

[0341] In addition, the glasses-type device 5510 and the external display unit 5512 communicate with each other wirelessly and wirelessly. Power supply may also be performed.

[0342] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can.

[0343] (Embodiment 8) In this embodiment, an example of a semiconductor device applicable to the device 10 shown in the first embodiment is This will be explained with reference to FIGS. 21 and 22.

[0344] FIG. 21 is a cross-sectional view of a semiconductor device 1300 that can be used with device 10. As shown in FIG.

[0345] The semiconductor device 1300 includes a substrate 700, a transistor 300, a storage element 740, and an insulating It has a film 741 , an insulating film 742 , a wiring 743 , and a wiring 708 .

[0346] The semiconductor device 1300 includes a transistor 300 and a capacitor 740 on the same substrate. do.

[0347] Details of the substrate 700, the power storage element 740, the insulating film 741, the insulating film 742, and the wiring 708 For details, please refer to the description of the semiconductor device 1000 shown in FIG.

[0348] The wiring 743 functions as a current collector of the power storage element 740 in addition to the function as a wiring. For details of the wiring 743, see the description of the current collecting layer 202 shown in FIG. stomach.

[0349] In FIG. 21, the areas without symbols and hatching patterns are made of insulating material. The area includes aluminum oxide, aluminum oxide nitride, and oxide. magnesium oxide, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, Gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide an insulator containing one or more selected from the group consisting of neodymium oxide, hafnium oxide, tantalum oxide, etc. In addition, the region may be made of a material such as a polyimide resin, a polyamide resin, or an acrylic resin. Organic resins such as grease, siloxane resin, epoxy resin, and phenolic resin can also be used. .

[0350] Next, the transistor 300 will be described in detail with reference to FIG.

[0351] 22A and 22B are a top view and a cross-sectional view of the transistor 300. 22(A) is a top view, and the cross section along the dashed line AB shown in FIG. 22(A) is shown in FIG. 22(B) ) In addition, in Figures 22(A) and 22(B), some elements are omitted for clarity. The elements are shown enlarged, reduced, or omitted. The direction of the dashed line AB is the channel length. It may also be called a direction.

[0352] The transistor 300 shown in FIG. 22B includes a conductive film 380 serving as a first gate and a , a conductive film 388 functioning as a second gate, a semiconductor 382, ​​a source and a drain, The conductive films 383 and 384 functioning as insulating films, the insulating film 381, and the insulating film 385 functioning as insulating films. The insulating film 386 and the insulating film 387 are provided.

[0353] The conductive film 380 is provided on an insulating surface. The conductive film 380 and the semiconductor 382 are The conductive film 388 and the semiconductor 382 are overlapped with each other with the insulating film 381 sandwiched therebetween. The conductive film 385, the insulating film 386, and the insulating film 387 are sandwiched between them. The conductive film 384 is connected to the semiconductor 382 .

[0354] The details of the conductive films 380 and 388 are the same as those of the conductive films 673 and 674 shown in FIG. Please refer to the description.

[0355] The conductive film 380 and the conductive film 388 may be given different potentials, or may be given the same potential at the same time. The transistor 300 may have a conductive film 388 serving as a second gate electrode. By providing the conductive film 388, it is possible to stabilize the threshold voltage. , may be omitted in some cases.

[0356] For details of the semiconductor 382, ​​please refer to the description of the semiconductor 662 shown in FIG. The body 382 may be a single layer or a stack of multiple semiconductor layers.

[0357] The details of the conductive films 383 and 384 are the same as those of the conductive films 671 and 672 shown in FIG. Please refer to the description.

[0358] For details of the insulating film 381, refer to the description of the insulating film 653 in FIG.

[0359] In FIG. 22B, a semiconductor 382, ​​a conductive film 383, and a conductive film 384 are stacked in this order. 3 shows an example in which insulating films 385 to 387 are provided, The insulating film provided over the conductive film 382, ​​the conductive film 383, and the conductive film 384 may be a single layer or a plurality of layers. A laminate of insulating films may also be used.

[0360] When an oxide semiconductor is used for the semiconductor 382, ​​the insulating film 386 contains oxygen in an amount greater than or equal to the stoichiometric composition. and an insulating layer having a function of supplying a part of the oxygen to the semiconductor 382 by heating. However, if the insulating film 386 is provided directly on the semiconductor 382, ​​the insulating film If the semiconductor 382 is damaged during the formation of the film 386, as shown in FIG. In addition, it is preferable to provide an insulating film 385 between the semiconductor 382 and the insulating film 386. The damage to the semiconductor 382 during its formation is smaller than that of the insulating film 386. It is desirable that the insulating film has a function of transmitting oxygen. By forming the insulating film 386 directly on the semiconductor 382 while minimizing damage, If this can be achieved, the insulating film 385 is not necessarily provided.

[0361] For example, the insulating film 386 and the insulating film 385 may be formed using silicon oxide or silicon oxynitride. It is preferable to use a material containing aluminum oxide, aluminum oxynitride, Gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide Metal oxides such as hafnium and hafnium oxynitride can also be used.

[0362] The insulating film 387 preferably has a blocking effect to prevent the diffusion of oxygen, hydrogen, and water. Alternatively, the insulating film 387 may have a blocking effect to prevent the diffusion of hydrogen and water. desirable.

[0363] The higher the density and the denser the insulating film, and the fewer dangling bonds there are and the more chemically stable it is, the better it will be. It exhibits a high blocking effect that prevents the diffusion of oxygen, hydrogen, and water. The insulating film may be, for example, aluminum oxide, aluminum oxynitride, gallium oxide, or gallium oxynitride. Sodium, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride It can be formed using a material such as a silicon dioxide film. The insulating film may be made of, for example, silicon nitride, silicon oxynitride, or the like.

[0364] If the insulating film 387 has a blocking effect to prevent the diffusion of water, hydrogen, etc., the resin in the panel It prevents impurities such as oil, water, and hydrogen present outside the panel from penetrating into the semiconductor 382. When an oxide semiconductor is used for the semiconductor 382, ​​water that has penetrated into the oxide semiconductor can be removed. Alternatively, a portion of hydrogen can act as an electron donor, and thus the insulating layer having the above-mentioned blocking effect can be formed. By using the insulating film 387, the threshold voltage of the transistor 300 is shifted by the generation of donors. This can prevent this from happening.

[0365] In addition, when an oxide semiconductor is used for the semiconductor 382, ​​the insulating film 387 acts as a blocking layer to prevent oxygen diffusion. The blocking effect prevents oxygen from diffusing from the oxide semiconductor to the outside. Therefore, oxygen vacancies that serve as donors in the oxide semiconductor are reduced, and The threshold voltage of the transistor 300 can be prevented from shifting due to the generation of donors.

[0366] Note that the transistor 300 may be applied to the transistor 730 described in Embodiment 1. stomach.

[0367] The semiconductor device 1300 can be applied to the device 10. For example, the transistor 300 can be used. The display unit 16 or the display drive circuit 19 included in the device 10 of FIG. By using the electrode 740 to fabricate the power storage element 17, the device 10 can be made smaller or thinner. This makes it possible.

[0368] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments. can. [Explanation of symbols]

[0369] 10 devices 11 CPU 12 Energy storage element 13 Regulator 14 Radio receiver 15 Control Module 16 Display 17 Energy storage element 18 Regulator 19 Display driver circuit 20 Radio receiving unit 21 Display Module 22 Communication Circuit 23 Energy storage element 24 Regulator 25 Radio receiving unit 26 Communication Module 200 EDLC 201 Insulating film 202 Current collector layer 203 Active material layer 204 Electrolyte layer 205 Active material layer 206 Current collector layer 207 Insulating Film 208 Wiring 209 Separator 210 EDLC 213 Active material layer 214 Separator 215 Active material layer 216 Electrolyte 217 Insulating Film 220 EDLC 230 EDLC 240 EDLC 251 insulating film 300 transistors 380 Conductive Film 381 Insulating Film 382 Semiconductors 383 Conductive Film 384 Conductive Film 385 insulating film 386 Insulating Film 387 Insulating Film 388 Conductive Film 640 board 651 Insulating film 652 insulating film 653 Insulating film 654 insulating film 655 insulating film 656 Insulating film 660 Semiconductors 661 Semiconductors 662 Semiconductors 663 Semiconductors 671 Conductive film 671a Conductive film 671b Conductive film 672 Conductive film 672a Conductive film 672b Conductive film 673 Conductive Film 674 Conductive film 700 boards 701 Plug 702 Plug 703 Plug 704 Plug 705 Wiring 706 Wiring 707 Wiring 708 Wiring 720 transistors 721 Impurity region 722 Impurity region 723 Channel Region 724 Gate insulating film 725 Sidewall insulating layer 726 Gate electrode 727 Element isolation layer 730 Transistors 731 Insulating Film 732 insulating film 740 Energy Storage Element 741 Insulating Film 742 insulating film 743 Wiring 750 transistors 751 Impurity region 752 Impurity region 753 Channel Region 754 Gate insulating film 755 Sidewall insulating layer 756 Gate electrode 757 Insulating Film 1000 Semiconductor device 1200 Semiconductor equipment 1300 Semiconductor equipment 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support part 5013 Earphones 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5100 Electronic equipment 5101 Display section 5102 Display section 5103 Handle 5200 Electronic equipment 5201 sheets 5202 Display section 5203 Antenna installation section 5300 Pacemaker unit 5301a Energy storage element 5301b Energy storage element 5302 Wire 5303 Wire 5304 Antenna 5305 Subclavian vein 5400 Electronic equipment 5401 Clothes 5402 Upper arm 5413 Radio Waves 5500 Eyeglasses-type Device 5501 Energy storage element 5502 Display section 5503 Control Unit 5504 Terminal section 5510 Eyeglasses-type device 5512 Display section

Claims

1. a first current collector layer; a first active material layer having a region disposed above the first current collector layer; a solid electrolyte layer having a region disposed above the first active material layer; a second active material layer having a region disposed above the solid electrolyte layer; a second current collector layer having a region disposed above the second active material layer, the solid electrolyte layer has a polymer-based solid electrolyte, In a plan view, the second current collector layer has a region extending in a first direction, The region functions as a wiring, when viewed in a cross section along the first direction, the solid electrolyte layer has a region in contact with each of two opposing ends of the first current collector layer and a region in contact with each of two opposing ends of the first active material layer, the second current collector layer has a region in contact with an end of the solid electrolyte layer and a region in contact with an end of the second active material layer.

2. a first current collector layer; a first active material layer having a region disposed above the first current collector layer; a solid electrolyte layer having a region disposed above the first active material layer; a second active material layer having a region disposed above the solid electrolyte layer; a second current collector layer having a region disposed above the second active material layer, the solid electrolyte layer has an inorganic solid electrolyte and a polymer solid electrolyte, In a plan view, the second current collector layer has a region extending in a first direction, The region functions as a wiring, when viewed in a cross section along the first direction, the solid electrolyte layer has a region in contact with each of two opposing ends of the first current collector layer and a region in contact with each of two opposing ends of the first active material layer, the second current collector layer has a region in contact with an end of the solid electrolyte layer and a region in contact with an end of the second active material layer.

Images