Silicon wafers and epitaxial silicon wafers

Abstract

To reduce the dislocation loop defect density that causes stacking faults in a silicon wafer.SOLUTION: The silicon wafer is 300 mm in diameter. The dopant is phosphorus. The resistivity is 0.6 mΩ cm or more and 1.2 mΩ cm or less. The carbon concentration is 3.5×1015atoms / cm3 or more and 5×1017atoms / cm3 or less.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to silicon wafers and epitaxial silicon wafers. [Background technology]

[0002] For example, epitaxial silicon wafers for power MOS transistors require extremely low resistivity before the silicon epitaxial layer is formed. For this reason, we provide epitaxial silicon wafers in which a silicon epitaxial layer is formed on the surface of a 200mm diameter silicon wafer that is heavily doped with phosphorus (P) to achieve a resistivity of 1.2mΩ·cm or less.

[0003] In recent years, there has been a demand for n-type silicon wafers with extremely low resistivity of 0.9 mΩ·cm or less. However, when the resistivity of a silicon wafer is extremely low, there is a problem in that stacking faults (SFs) occur in the silicon epitaxial layer when epitaxial growth is performed, and there is a demand for a reduction in the density of SFs that occur in the silicon epitaxial layer.

[0004] The present applicant has discovered a technique for suppressing the generation of SFs in a silicon epitaxial layer by adjusting the residence time (thermal history) of a single crystal ingot at 570°C±70°C during single crystal growth (shortening the residence time in the temperature range where SF nuclei are formed), as described in Patent Document 1. In addition, the applicant has discovered that the generation of SFs in a silicon epitaxial layer can be suppressed by using a technique for performing high-temperature heat treatment (argon annealing) before the growth of the silicon epitaxial layer, as described in Patent Document 2. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2014 / 175120 [Patent Document 2] Japanese Patent Application Laid-Open No. 2014-011293 Summary of the Invention [Problem to be solved by the invention]

[0006] As described in Patent Document 1, if a silicon wafer is cut from a crystalline region in which the time spent in the temperature range where SF nuclei are formed is shortened (a silicon wafer with fewer SF nuclei), the SF density in the epitaxial layer after growth of the silicon epitaxial layer can be reduced.

[0007] Furthermore, as described in Patent Document 2, by subjecting a silicon wafer cut from a crystalline region that has a long residence time in a temperature range where SF nuclei are formed (a silicon wafer with many SF nuclei) to argon annealing, the SF density in the epitaxial layer after growth of the silicon epitaxial layer can be reduced. Although the techniques described in Patent Documents 1 and 2 are effective in suppressing the generation of SFs in silicon epitaxial layers, in recent years there has been an increasing demand for larger diameter epitaxial silicon wafers, and there is a demand for epitaxial silicon wafers with a diameter of 300 mm and a resistivity of 1.2 mΩ cm or less.

[0008] An object of the present invention is to provide a silicon wafer having a low density of dislocation loop defects that cause SFs, and an epitaxial silicon wafer having a silicon epitaxial layer with low generation of SFs. [Means for solving the problem]

[0009] As a result of extensive research into the causes of SFs that occur in silicon epitaxial layers, the inventors have discovered that heavily phosphorus-doped silicon wafers are subject to two main types of dislocation loop defects (defects in which disturbed portions of the crystal arrangement are connected in a loop shape) depending on the thermal history that the crystal experiences during the growth process of a 300 mm diameter single crystal ingot.

[0010] The process leading to the discovery of dislocation loop defects will be described below. First, a silicon single crystal ingot with a diameter of 300 mm was grown to which a high concentration of phosphorus was added as a dopant, and silicon wafers were produced by cutting from a crystal region that had a long residence time in the temperature range where SF nuclei were formed (hereinafter referred to as the SF nuclei generation temperature range residence time), and by cutting from a crystal region that had a short residence time in the SF nuclei generation temperature range.

[0011] Specifically, silicon wafers with a resistivity of 0.9 mΩ·cm were produced that were cut from the top side of the straight body of a single crystal ingot that had a residence time of 570°C ± 70°C for 1000 minutes or more as silicon wafers with a long residence time in the SF nucleation temperature zone, and silicon wafers with a resistivity of 0.7 mΩ·cm were produced that were cut from the bottom side of the straight body of a single crystal ingot that had a residence time of 50 minutes or less at 570°C ± 70°C as silicon wafers with a long residence time in the SF nucleation temperature zone. Each silicon wafer was cleaved in the thickness direction, and the cleaved cross section was observed using a transmission electron microscope (TEM). The results are shown in Figure 1.

[0012] As a result, in silicon wafers cut from the crystalline region (top-side crystalline region) that had a long residence time in the SF nucleation temperature zone, large complex dislocation loop defects 2, in which dislocation loops overlap each other, as shown in Figure 1(a), were observed, and it was confirmed that there was a high density of large defects with sizes exceeding 60 nm. Figure 1(b) is a photograph of the complex dislocation loop defect 2 shown in Figure 1(a) taken from a different angle, and it can be seen that this complex dislocation loop defect 2 has a planar shape. On the other hand, in silicon wafers cut from the crystal region with a short residence time in the SF nucleation temperature zone (the bottom crystal region), small dislocation loop defects 4 as shown in Figure 2 were observed, and it was confirmed that the density of large complex dislocation loop defects with sizes exceeding 60 nm was low.

[0013] It was then confirmed that SFs are generated in silicon epitaxial layers starting from large-sized complex dislocation loop defects. This is because it is believed that the state of SF generation in silicon epitaxial layers differs depending on the presence or absence of complex dislocation loop defects. Therefore, the inventors considered the mechanism of dislocation loop generation and reached the following conclusion.

[0014] The present inventors hypothesized the following regarding the generation of dislocation loop defects. First, during the cooling process of a silicon single crystal ingot, interstitial phosphorus present between the lattices in the crystal kicks out (flips off) lattice silicon present at the lattice position, generating interstitial silicon. This excess interstitial silicon aggregates and forms dislocation loops, and interstitial phosphorus segregates in these dislocation loops, generating dislocation loop defects.

[0015] They then thought that suppressing the aggregation of interstitial silicon would be effective in suppressing the occurrence of dislocation loop defects, and that the aggregation of interstitial silicon could be suppressed by intentionally adding an impurity element that can pair with interstitial silicon, and came up with the idea of ​​incorporating carbon into the crystal during the single crystal growth stage. The inventors have grown a silicon single crystal ingot by doping (adding) carbon to a silicon melt and evaluated the defects formed in the carbon-doped silicon wafer, and have found that the defect density of large dislocation loops formed in the silicon wafer can be reduced, leading to the completion of the present invention.

[0016] On the other hand, Patent Document 3 describes a method of improving the gettering ability of epitaxial silicon wafers by adding carbon to silicon wafers to increase the density of oxygen precipitates (BMD: Bulk Micro Defect) formed in the wafers. Specifically, the invention described in Patent Document 3 is a technology that attempts to eliminate the decrease in gettering ability caused by a decrease in oxygen concentration in the latter half of single crystal ingot growth by adding carbon. It is well known that, not limited to Patent Document 3, adding carbon to silicon crystals increases BMD density in order to provide epitaxial wafers with excellent gettering ability.

[0017] [Patent Document 3] Special Publication No. 2003-505324

[0018] It is generally known that a region in a silicon wafer where phosphorus is present at a high concentration by a phosphorus thermal diffusion process, a phosphorus ion implantation process, or the formation of a phosphorus-containing epitaxial layer functions as a gettering layer (also known as a phosphorus gettering method). That is, a silicon wafer that is highly doped with phosphorus to have a resistivity of 1.2 mΩ·cm or less, as the subject of the present invention, has sufficient gettering properties simply by the presence of high concentrations of phosphorus. Therefore, there is no requirement to increase the BMD density in the epitaxial wafer that is the subject of the present invention. Therefore, there is no motivation to add carbon to a highly phosphorus-doped silicon wafer, as the subject of the present invention, to increase the BMD density and thereby improve the gettering capability. Furthermore, Patent Document 3 does not consider at all the frequent occurrence of SF, which is a particular problem in silicon wafers that are doped with phosphorus at a high concentration so that the substrate resistivity is 1.2 mΩ·cm or less.

[0019] The silicon wafer of the present invention has a diameter of 300 mm, a dopant of phosphorus, a resistivity of 0.6 mΩ cm or more and 1.2 mΩ cm or less, and a carbon concentration of 3.5 × 10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 The following is the result.

[0020] The resistivity of a silicon wafer as defined in the present invention is a value measured on the surface of the silicon wafer by the four-point probe method. The carbon concentration of a silicon wafer as defined in the present invention is a value obtained by thinning the silicon wafer by polishing, and measuring the carbon concentration at the center of the thickness of the silicon wafer using secondary ion mass spectrometry (SIMS). Since the outermost surface of a silicon wafer has a lot of noise components, making it difficult to measure the carbon concentration accurately, accurate measurement of the carbon concentration is possible if measurement is performed at a depth of 1 μm or more from the wafer surface, excluding the outermost surface. In the present invention, the concentration is specified as the concentration at the center of the silicon wafer thickness to obtain a more accurate value.

[0021] In the silicon wafer, the oxygen concentration of the silicon wafer is 4×10 17 atoms / cm 3 Over 10x10 17 atoms / cm 3 It may be the following: The oxygen concentration of a silicon wafer as defined in the present invention is a value obtained by thinning the silicon wafer by polishing and measuring the oxygen concentration at the center of the thickness of the silicon wafer by SIMS. Since the outermost surface of a silicon wafer has a lot of noise components, making it difficult to measure the oxygen concentration accurately, accurate measurement of the oxygen concentration is possible if measurement is performed at a depth of 1 μm or more from the wafer surface, excluding the outermost surface. In this invention, to obtain a more accurate value, the concentration is specified as the concentration at the center of the silicon wafer thickness.

[0022] In the silicon wafer, it is preferable that no COPs are present in the silicon wafer. In the present invention, "COP-free" refers to a silicon wafer in which no COPs are detected by the observation and evaluation described below. Specifically, a silicon wafer cut from a single-crystal silicon ingot grown by the CZ method is first subjected to SC-1 cleaning (i.e., cleaning with a mixture of ammonia water, hydrogen peroxide, and ultrapure water in a ratio of 1:1:15). The surface of the silicon wafer after cleaning is observed and evaluated using a KLA-Tencor Surfscan SP-2 surface defect inspection system to identify light point defects (LPDs) estimated to be surface pits. The observation mode is oblique mode (oblique incidence mode), and the surface pits are estimated based on the detection size ratio of the wide / narrow channel. The LPDs thus identified are evaluated for their presence or absence of COPs using an atomic force microscope (AFM). A silicon wafer in which no COPs are observed by this observation and evaluation is defined as a "COP-free silicon wafer."

[0023] The epitaxial silicon wafer of the present invention has a diameter of 300 mm, contains phosphorus as a dopant, has a resistivity of 0.6 mΩ cm or more and 1.2 mΩ cm or less, and has a carbon concentration of 3.5 × 10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 The present invention comprises a silicon wafer having the following structure and a silicon epitaxial layer formed on a surface of the silicon wafer.

[0024] The resistivity of the epitaxial silicon wafer specified in the present invention is a value measured by the four-point probe method on the back surface of the silicon wafer. If an oxide film is formed on the back surface of the epitaxial silicon wafer, the resistivity is a value measured by the four-point probe method on the back surface of the silicon wafer from which the back surface oxide film has been removed.

[0025] The carbon concentration of the epitaxial silicon wafer specified in the present invention is a value obtained by thinning the silicon wafer by polishing and measuring the carbon concentration at the center of the thickness of the silicon wafer by SIMS. In the production of epitaxial silicon wafers, the silicon wafers are subjected to high-temperature heat treatments during epitaxial growth and before the epitaxial growth process, which causes carbon to diffuse outward and reduces the carbon concentration in the surface layer of the silicon wafer. For this reason, to measure the carbon concentration of an epitaxial silicon wafer, it is necessary to measure it at a depth position where outward diffusion of carbon does not occur, and an accurate measurement of the carbon concentration is possible if the measurement is made at a depth position of 40 μm or more from approximately the wafer surface in the depth direction of the wafer. In the present invention, in order to obtain a more accurate value, the carbon concentration is specified as the concentration at the center of the silicon wafer thickness.

[0026] The epitaxial silicon wafer of the present invention has a diameter of 300 mm, contains phosphorus as a dopant, has a resistivity of 0.6 mΩ cm or more and 1.2 mΩ cm or less, and has a carbon concentration of 3.5 × 10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 and a silicon epitaxial layer on a surface of the silicon wafer, wherein the silicon wafer has a low-carbon concentration layer on the surface side in contact with the silicon epitaxial layer, the carbon concentration of the low-carbon concentration layer being 0.9 times or less the carbon concentration at the center of the thickness of the silicon wafer, and the depth of the low-carbon concentration layer is 5 μm or more and 15 μm or less from the boundary between the silicon wafer and the silicon epitaxial layer in the thickness direction of the silicon wafer. The depth of the low carbon concentration layer is a value based on the carbon concentration profile in the depth direction obtained by SIMS measurement, and means the depth position (width) in the thickness direction of the silicon wafer from the boundary between the epitaxial layer and the silicon wafer.

[0027] In the epitaxial silicon wafer, it is desirable that the resistivity of the silicon wafer be 1.0 mΩcm or less.

[0028] In the epitaxial silicon wafer, the carbon concentration of the silicon wafer is 1×10 16 atoms / cm 3 It is desirable to have more than this.

[0029] In the epitaxial silicon wafer, the oxygen concentration of the silicon wafer is 4×10 17 atoms / cm 3 Over 10x10 17 atoms / cm 3 It is desirable to do the following:

[0030] The oxygen concentration of the epitaxial silicon wafer specified in the present invention is a value obtained by thinning the silicon wafer by polishing and measuring the oxygen concentration at the center of the thickness of the silicon wafer by SIMS. To measure the oxygen concentration of an epitaxial silicon wafer, it is necessary to measure it at a depth where outward diffusion of oxygen does not occur, and accurate measurement of the oxygen concentration is possible if the measurement is made at a depth of 150 μm or more from approximately the wafer surface in the depth direction of the wafer. In the present invention, the concentration is specified as the concentration at the center of the silicon wafer thickness in order to obtain a more accurate value.

[0031] In the epitaxial silicon wafer, it is desirable that the silicon wafer is free of COPs.

[0032] In the epitaxial silicon wafer, it is desirable that an oxide film be provided on the back surface of the silicon wafer.

[0033] In the epitaxial silicon wafer, it is desirable that there be no oxide film on the edge and the outer periphery of the back surface of the silicon wafer.

[0034] In the epitaxial silicon wafer, it is desirable that the density of LPDs having a size of 0.09 μm or more observed on the surface of the epitaxial layer is 130 pieces / wafer or less.

[0035] In the epitaxial silicon wafer, it is desirable that the density of LPDs having a size of 0.09 μm or more observed on the surface of the epitaxial layer is 100 pieces / wafer or less.

[0036] The silicon wafer of the present invention has a diameter of 300 mm, a dopant of phosphorus, a resistivity of 0.6 mΩ cm or more and 1.2 mΩ cm or less, and a carbon concentration of 3.5 × 10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 The silicon wafer has a low-carbon concentration layer on its surface, the carbon concentration of the low-carbon concentration layer is 0.9 times or less the carbon concentration at the center of the thickness of the silicon wafer, and the depth of the low-carbon concentration layer is 5 μm or more and 15 μm or less from the surface of the silicon wafer in the thickness direction of the silicon wafer.

[0037] In the silicon wafer, the oxygen concentration of the silicon wafer is 4×10 17 atoms / cm 3 Over 10x10 17 atoms / cm 3 It is preferable that:

[0038] In the silicon wafer, it is preferable that no COPs are present in the silicon wafer. [Brief explanation of the drawings]

[0039] [Figure 1] This is a photograph of complex dislocation loops observed in a silicon wafer cut from a crystalline region that had a long residence time in the SF nucleation temperature range. [Figure 2]This is a photograph of dislocation loops observed in a silicon wafer cut from a crystalline region where the residence time in the SF nucleation temperature zone was short. [Figure 3] 1 is a flowchart showing an embodiment of a method for manufacturing an epitaxial silicon wafer according to the present invention. [Figure 4] 1 is a cross-sectional view of one embodiment of an epitaxial silicon wafer according to the present invention. [Figure 5] 1 is a graph showing the evaluation results of dislocation loops in the epitaxial silicon wafers of Example 1 and Comparative Example 1. [Figure 6] 1 is a graph showing the results of investigating the carbon concentration profiles of the epitaxial silicon wafers of Examples 4 and 5. [Figure 7] 1 shows X-ray topography photographs of the surfaces of silicon wafers of Examples 6 and 7 and Comparative Examples 4 and 5. [Figure 8] 1 is a graph showing the relationship between LPD density and resistivity when an epitaxial layer is formed on the surface of each silicon wafer in Examples 8 and 9 and Comparative Examples 6 and 7. DETAILED DESCRIPTION OF THE INVENTION

[0040] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The silicon wafer according to the present invention is a silicon wafer having a diameter of 300 mm, and is doped with phosphorus (P), which is a dopant for adjusting resistivity, so that the resistivity is 0.6 mΩ cm or more and 1.2 mΩ cm or less, and the carbon concentration is 3.5 × 10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 The silicon wafer is shown below. The silicon wafer having a diameter of 300 mm as defined in the present invention means a silicon wafer having a diameter of 300±0.5 mm, taking into account processing errors and the like. The epitaxial silicon wafer according to the present invention comprises the above silicon wafer and a silicon epitaxial layer formed on the silicon wafer.

[0041] A suitable manufacturing flow for obtaining the epitaxial silicon wafer according to the present invention is shown in Figure 3. The manufacturing flow preferably includes a single crystal ingot manufacturing step S1, a backside oxide film forming step S2, a peripheral oxide film removing step S3, an argon annealing step S4, a pre-baking step S5, and an epitaxial layer forming step S6.

[0042] In the single crystal ingot manufacturing process S1, a single crystal silicon ingot with a diameter of 300 mm doped with phosphorus as an n-type dopant is manufactured by the CZ method (Czochralski method) using a single crystal ingot pulling device (not shown) so as to satisfy the following conditions:

[0043] (phosphorus concentration) The phosphorus concentration in the single crystal ingot is 6×10 19 atoms / cm 3 Over 1.32 x 10 20 atoms / cm 3 By doping with red phosphorus (P) as follows, it is possible to obtain a single crystal ingot with a resistivity of 0.6 mΩ·cm or more and 1.2 mΩ·cm or less. The larger the diameter of the single crystal ingot being grown, the more likely dislocations are to occur during growth, so currently, when growing a 300mm diameter single crystal ingot, it is difficult to grow a dislocation-free single crystal ingot with a resistivity of less than 0.6mΩ·cm. From the perspective of growing a dislocation-free single crystal ingot stably, it is more desirable to have a resistivity of 0.8mΩ·cm or higher.

[0044] Furthermore, the lower the resistivity, the higher the density of SF generated in the silicon epitaxial layer. When the resistivity is 1.0 mΩ cm or less, SF is particularly likely to be generated, and the effect of adding carbon is more pronounced. For this reason, when the phosphorus concentration is increased to 8.3 × 10 19 atoms / cm 3It is desirable to keep the resistivity to 1.0 mΩ·cm or less. The phosphorus concentration of a silicon wafer is the value measured by secondary ion mass spectrometry (SIMS) at the center of the silicon wafer's thickness. The phosphorus concentration can also be calculated from the resistivity measured by the four-point probe method using the formula or graph specified in SEMI MF723-0307. If the silicon raw material is doped with phosphorus before being melted, the phosphorus will evaporate during melting of the silicon raw material, making it impossible to obtain the desired resistivity. Therefore, it is desirable to dope the silicon melt with red phosphorus after melting the silicon raw material.

[0045] (carbon concentration) The carbon concentration in the single crystal ingot is 3.5×10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 As described below, by adding carbon powder to a crucible together with silicon raw material and melting them, a single crystal ingot having a predetermined carbon concentration can be grown. Carbon concentration 3.5×10 15 atoms / cm 3 By doing so, it is possible to reduce the size and density of dislocation loop defects formed in the silicon wafer, and to significantly reduce the SF density generated in the epitaxial layer after the epitaxial growth process. In addition, the higher the carbon concentration, the more effective it is in reducing the LPD density (SF density) generated in the epitaxial layer. 16 atoms / cm 3 It is more desirable to set the carbon concentration at 3×10 or more. 16 atoms / cm 3 On the other hand, it is more desirable that the carbon concentration is 5×10 17 atoms / cm 3If the carbon concentration exceeds 3×10, dislocations tend to occur in the single crystal during the growth process of the single crystal ingot, making it difficult to grow a dislocation-free single crystal ingot. 17 atoms / cm 3 It is more desirable to set it as follows:

[0046] (oxygen concentration) If the oxygen concentration in the silicon wafer is high, as will be described later, it tends to deteriorate the device breakdown voltage characteristics. Therefore, it is desirable to lower the oxygen concentration in the single crystal ingot. 17 atoms / cm 3 Over 10x10 17 atoms / cm 3 The following range is desirable: To grow a single crystal ingot with a low oxygen concentration, it is desirable to apply a magnetic field to the silicon melt. A well-known horizontal magnetic field or cusp magnetic field can be applied, and the oxygen concentration incorporated into the single crystal can be reduced to the desired concentration by slowing down the rotation speed of the crucible containing the silicon melt or by lowering the pressure inside the pulling furnace. In addition, the oxygen concentration is 4×10 17 atoms / cm 3 If the oxygen concentration is less than 4×10, the strength of the silicon wafer is low and slip dislocations may occur when the wafer is subjected to high-temperature heat treatment. 17 atoms / cm 3 It is desirable to have more than this.

[0047] Thereafter, silicon wafers are cut out from the single crystal ingot produced in the single crystal ingot production process S1 and subjected to predetermined processing (grinding, etching, polishing, etc.) to produce mirror-finished silicon wafers with excellent surface roughness and flatness.

[0048] In the rear surface oxide film forming step S2, it is desirable to form an oxide film (hereinafter referred to as rear surface oxide film) on the rear surface of the silicon wafer using a CVD apparatus within the following condition ranges. Source gas: Mixture of monosilane (SiH4) and oxygen (O2) Thickness of rear surface oxide film: 100nm to 1500nm Film forming temperature: 400℃ or higher and 450℃ or lower By providing such a back surface oxide film, the autodoping phenomenon can be suppressed, and the resistance fluctuation of the epitaxial layer can be suppressed.

[0049] In the backside oxide film forming step S2, it is difficult to form an oxide film only on the backside of the silicon wafer, and an oxide film is inevitably formed on the edge (chamfered portion) of the silicon wafer after the backside oxide film forming step S2. If an epitaxial layer is formed on the surface of the oxide film, there is a risk of nodules (granular silicon) being generated in that area, so it is desirable to remove the oxide film formed on the edge of the silicon wafer and on the outer periphery of the backside of the wafer.

[0050] Therefore, in the peripheral oxide film removal step S3, it is sufficient to use various techniques such as polishing and etching to remove the oxide film present on the edge (chamfered portion) of the silicon wafer and the peripheral portion of the back surface of the wafer, and it is preferable that the removal width of the oxide film present on the peripheral portion of the back surface of the wafer is less than 5 mm from the outer edge of the silicon wafer. By removing the edge of the silicon wafer and the outer periphery of the backside oxide film in this manner, it is possible to prevent the generation of nodules during the growth of the silicon epitaxial layer, and also to prevent the generation of particles from the wafer edge.

[0051] In the argon annealing step S4, it is desirable to perform the heat treatment within the following condition range. Gas atmosphere: Argon gas Heat treatment temperature: 1150℃ to 1250℃ Heat treatment time: 30 minutes or more and 120 minutes or less It is desirable to use a batch furnace (vertical heat treatment device) capable of heat treating a plurality of silicon wafers at once. High-concentration carbon doping suppresses the generation of large dislocation loop defects in silicon wafers, and small dislocation loop defects present in silicon wafers can be eliminated by argon annealing the silicon wafers, thereby minimizing the generation of SFs in the epitaxial layer.

[0052] Furthermore, by performing argon annealing on the silicon wafer before the epitaxial growth process, it is possible to reduce the diffusion of carbon from the silicon wafer to the silicon epitaxial layer that occurs during the epitaxial layer formation step S6. This point will be explained below. FIG. 4(a) is a schematic diagram showing a low carbon concentration layer formed in the surface layer of a silicon wafer by argon annealing. 4(a), high-temperature argon annealing of the silicon wafer 11 causes outward diffusion of carbon in the surface layer of the silicon wafer 11, reducing the carbon concentration in the surface layer. As a result, low-carbon concentration layers 12, which have a lower carbon concentration than the carbon concentration in the thickness center C of the silicon wafer 11 where no outward diffusion of carbon has occurred, are formed on the front and back surfaces of the silicon wafer 11.

[0053] FIG. 4(b) is a schematic diagram showing the carbon concentration profile when epitaxial growth is performed on an argon-annealed silicon wafer. 4(b), the carbon concentration after the epitaxial layer formation step S6 exhibits a concentration profile in which the carbon concentration in the surface layer portion of the silicon wafer is reduced. If the region where the carbon concentration is 0.9 times or less the carbon concentration at the thickness center C of the silicon wafer 11 where no outward diffusion of carbon has occurred is defined as the low-carbon concentration layer 12, then after the epitaxial growth process, the depth D of the low-carbon concentration layer 12 formed on the surface side of the silicon wafer 11 that contacts the silicon epitaxial layer 13 can be set to 5 μm or more and 15 μm or less from the boundary between the silicon wafer 11 and the silicon epitaxial layer 13 in the thickness direction of the silicon wafer 11. The formation of this low carbon concentration layer 12 can further reduce the diffusion of carbon from the silicon wafer 11 to the silicon epitaxial layer 13 that occurs during the epitaxial layer formation step S6. The thickness of the low carbon concentration layer 12 can be adjusted as desired by adjusting the temperature and time of the argon annealing heat treatment.

[0054] In the pre-baking step S5 in a gas atmosphere containing hydrogen and hydrogen chloride, it is desirable to perform heat treatment on the silicon wafer in an epitaxial apparatus (Centura (registered trademark) manufactured by Applied Materials, Inc.) within the following condition ranges. Atmosphere: Hydrogen gas, hydrogen chloride gas Hydrogen gas flow rate: 40 L / min Hydrogen chloride gas flow rate: 1 L / min Heat treatment temperature: 1050℃ to 1250℃ Heat treatment time: 30 seconds or more and 300 seconds or less

[0055] The removal amount of the surface layer portion of the silicon wafer in the pre-bake step S5 is preferably 100 nm or more and 300 nm or less, and more preferably 150 nm±10 nm.

[0056] In the epitaxial layer forming step S6, it is desirable to grow an epitaxial layer on the silicon wafer that has been subjected to the pre-baking step S5 within the following condition range. Dopant gas: phosphine (PH3) gas Raw material source gas: Trichlorosilane (SiHCl3) gas Carrier gas: Hydrogen gas Growth temperature: 1050℃ or higher and 1150℃ or lower Epitaxial layer thickness: 1 μm to 10 μm Epitaxial layer resistivity: 0.01 Ω·cm to 10 Ω·cm Phosphorus concentration: 4.44 x 10 14 atoms / cm 3 Over 4.53 x 10 18 atoms / cm 3 below By performing the epitaxial layer forming step S6, an epitaxial silicon wafer is manufactured in which a silicon epitaxial layer is formed on the surface of the silicon wafer.

[0057] By carrying out the above process flow, it is possible to provide a silicon wafer capable of reducing the generation of SFs in the epitaxial layer, and an epitaxial silicon wafer with a reduced SF density in the epitaxial layer. Specifically, the diameter is 300 mm, phosphorus is added so that the resistivity is between 0.6 mΩ cm and 1.2 mΩ cm, and the carbon concentration is 3.5 × 10 15 atoms / cm 3 5x10 or more 17 atoms / cm 3 The present invention provides a silicon wafer doped with carbon at a high concentration as follows, which is a novel silicon wafer that has not existed before.

[0058] Carbon doping reduces the defect density of large dislocation loops in silicon wafers, making these silicon wafers effective as bulk wafers for epitaxial growth, reducing the occurrence of epitaxial defects (LPD / SF observed on the surface of the epitaxial layer).

[0059] In addition, the oxygen concentration of the silicon wafer was set to 4×10 17 atoms / cm 3 Over 10x10 17 atoms / cm 3 By setting the content below, it is possible to prevent a failure in the device breakdown voltage even when carbon is doped.

[0060] Furthermore, by subjecting a silicon wafer to argon annealing before forming a silicon epitaxial layer, the carbon concentration in the surface layer of the silicon wafer is reduced, and the amount of carbon diffusing into the silicon epitaxial layer during the formation of the silicon epitaxial layer can be reduced. By reducing the amount of carbon diffused into the silicon epitaxial layer, it is possible to suppress the deterioration of electrical characteristics due to the generation of defects caused by carbon incorporated into the silicon epitaxial layer during heat treatment in the device process for fabricating devices on the epitaxial silicon wafer.

[0061] In the above embodiment, the resistivity of the silicon wafer is set to 0.6 mΩ·cm or more and 1.2 mΩ·cm or less, but for a silicon wafer with even lower resistivity, the resistivity is preferably set to 1.0 mΩ·cm or less. The lower the resistivity, the more significant the occurrence of SF in the epitaxial layer, and therefore the greater the effect of carbon doping of the present invention.

[0062] Furthermore, the silicon wafer of this embodiment is manufactured from a single crystal ingot made from a silicon melt doped with phosphorus so that the resistivity is 1.2 mΩ·cm or less. Due to the high concentration of phosphorus added, the oxidation-induced stacking fault (OSF) ring region, where OSFs occur during the manufacturing process of the single crystal ingot, disappears at the center of the ingot, resulting in a crystal region free of COPs. In other words, the silicon wafer of this embodiment can be made free of COPs by the high concentration of phosphorus added, thereby preventing the occurrence of defects due to COPs in the epitaxial layer. [Example]

[0063] The experimental conditions and evaluation results of examples and comparative examples of the present invention will be described below. <Dislocation loop evaluation> The following Example 1 and Comparative Example 2 were evaluated for dislocation loops. Example 1 In Example 1, epitaxial silicon wafers were produced within the range of conditions for the epitaxial silicon wafer production flow described with reference to Fig. 3. The single crystal ingot was produced under growth conditions in which carbon powder was added before melting the silicon raw material, and phosphorus was added to the silicon melt after melting the raw material so that the resistivity at the top end of the straight body of the single crystal ingot was 1.0 mΩ cm. A sample wafer was cut from the top of the carbon-added single crystal ingot and processed to produce a mirror-finished silicon wafer. The resistivity of this silicon wafer was measured using the four-point probe method, and the resistivity was found to be 0.9 mΩ·cm, and the carbon concentration of the silicon wafer was 1×10 16 atoms / cm 3 It was.

[0064] <Comparative Example 1> Silicon wafers were produced under the same production conditions as in Example 1, except that carbon doping was not performed during the growth stage of the single crystal ingot. As in Example 1, a sample wafer with a resistivity of 0.9 mΩ cm was cut out and subjected to the specified processing to produce mirror-finished silicon wafers.

[0065] The silicon wafers of Example 1 and Comparative Example 1 were cleaved in the thickness direction, and the cleaved cross sections were observed with a transmission electron microscope (TEM). Figure 5 is a graph showing the evaluation results of dislocation loops in the silicon wafers of Example 1 and Comparative Example 1. The horizontal axis of Figure 5 represents dislocation loop size, and the vertical axis represents dislocation loop density. Figure 5(a) shows the results for the silicon wafer of Comparative Example 1, which was not doped with carbon. Since the sample wafer was cut from the top side of the crystal, where the residence time in the SF nucleation temperature zone is longer, many large dislocation loop defects exceeding 60 nm were observed. On the other hand, Figure 5(b) shows the results for the silicon wafer of Example 1, which was doped with carbon at a high concentration. Since the sample wafer was cut from the top side of the crystal, where the residence time in the SF nucleation temperature zone was long, many small dislocation loops were observed, but it was confirmed that the density of large dislocation loops exceeding 60 nm was significantly reduced. That is, it was confirmed that carbon doping reduces the density of large dislocation loops formed in silicon wafers.

[0066] [LPD density evaluation] When a silicon epitaxial layer is formed using a sample silicon wafer cut from the top side of the straight body of an ingot, which has a long residence time in the temperature range where SF nuclei are formed, many SFs occur in the epitaxial layer, resulting in an increase in LPD density. Therefore, in this experiment, sample silicon wafers of Examples 2 and 3 and Comparative Examples 2 and 3 below were cut from the top side of the straight body, and the LPD densities observed on the epitaxial layer surfaces after epitaxial layer formation were measured. The specific conditions for the back surface oxide film forming process and the epitaxial layer forming process, which were carried out as common processing steps in each of the examples and comparative examples, are as follows: [Backside oxide film formation conditions] A backside oxide film was formed on the backside of each silicon wafer (the surface opposite to the surface on which the epitaxial film was formed) under the following conditions. Source gas: Mixture of monosilane (SiH4) and oxygen (O2) Film formation method: CVD method Film forming temperature: 400℃ Backside oxide thickness: 550nm The oxide film present on the chamfered portion and the outer periphery of the back surface of each silicon wafer was removed by etching. [Hydrogen baking conditions] Atmosphere: Hydrogen gas Heat treatment temperature: 1200℃ Heat treatment time: 30 seconds [Epitaxial film growth conditions] Dopant gas: phosphine (PH3) gas Raw material source gas: Trichlorosilane (SiHCl3) gas Carrier gas: Hydrogen gas Growth temperature: 1080℃ Epitaxial film thickness: 4 μm Resistivity (epitaxial film resistivity): 0.3 Ω cm <Comparative Example 2> An epitaxial silicon wafer was produced by forming a silicon epitaxial layer having a thickness of 4 μm on the surface of the silicon wafer of Comparative Example 1, which was not doped with carbon and in which many dislocation loops were observed.

[0067] <Comparative Example 3> The silicon wafer of Comparative Example 1 was subjected to argon annealing (heat treatment in an argon gas atmosphere at 1200°C for 30 minutes), and then a silicon epitaxial layer having a thickness of 4 µm was formed on the surface of the silicon wafer to produce an epitaxial silicon wafer.

[0068] <Example 2> The carbon-doped silicon wafer of Example 1 was not subjected to argon annealing, and a silicon epitaxial layer having a thickness of 4 μm was formed on the surface of the silicon wafer to produce an epitaxial silicon wafer.

[0069] Example 3 The carbon-doped silicon wafer of Example 1 was subjected to argon annealing (heat treatment at 1200°C for 30 minutes in an argon gas atmosphere), and then a 4 μm-thick silicon epitaxial layer was formed on the surface of the silicon wafer to produce an epitaxial silicon wafer. The epitaxial growth conditions were the same for Examples 2 and 3 and Comparative Examples 2 and 3.

[0070] The LPD density on the silicon epitaxial layer surface of the epitaxial silicon wafer of Comparative Example 2 was measured using a surface defect inspection system (Surfscan SP-1, manufactured by KLA-Tencor). Specifically, the measurement was performed in Normal mode (DCN mode), and the density of LPDs of 90 nm or larger observed on the epitaxial film surface was measured. The measurement area was the epitaxial layer surface excluding an annular region extending from the outermost periphery of the epitaxial silicon wafer to 3 mm radially inward. The number of LPDs counted can be considered the number of SFs. As a result, the number of detected LPDs was so large that it overflowed (more than 100,000 per wafer), making it impossible to perform LPD measurement itself. In Comparative Example 3, in which the silicon wafer was subjected to argon annealing, the LPD density was reduced compared to Comparative Example 2, but 1055 LPDs per wafer were observed. Below, the LPD density of each Example and Comparative Example was measured under the same conditions as those of Comparative Example 2.

[0071] When the LPD density on the surface of the silicon epitaxial layer of the epitaxial silicon wafer of Example 2 was measured, the number of detected particles was so large that it overflowed (more than 100,000 particles / wafer), making it impossible to perform the LPD measurement itself. This is presumably because, although the density of large-sized complex dislocation loops in the silicon wafer was reduced by carbon doping, there were still many small dislocation loops less than 60 nm in size.

[0072] In Example 3, in which the silicon wafer was subjected to argon annealing before the epitaxial growth process, the LPD density on the surface of the epitaxial layer was significantly reduced to 10 LPDs / wafer. This is thought to be because the argon annealing eliminated small dislocation loops with a size of less than 60 nm that were present in the surface layer of the silicon wafer.

[0073] From the above, it was revealed that when carbon is doped and the silicon wafer is annealed with argon, the effect of reducing SF generation in the silicon epitaxial layer is enhanced, and the LPD density after epitaxial layer formation can be reduced to about 1 / 10 compared to Comparative Example 3.

[0074] [Carbon concentration profile evaluation] When carbon is doped at a high concentration, carbon diffusion into the silicon epitaxial layer occurs due to heat treatment during the formation of the silicon epitaxial layer. Therefore, the behavior of carbon diffusion into the silicon epitaxial layer was evaluated. Example 4 Silicon wafer with high carbon concentration (carbon concentration at the center of the wafer thickness: 3.8 x 10 16 atoms / cm 3 ) was prepared, and an epitaxial silicon wafer was produced on which a silicon epitaxial layer similar to that of Example 2 was formed without argon annealing. <Example 5> An epitaxial silicon wafer was manufactured by subjecting a silicon wafer similar to that of Example 4 to argon annealing similar to that of Example 3 and then forming a silicon epitaxial layer thereon.

[0075] Figure 6 is a graph showing the results of the carbon concentration profile measurement using secondary ion mass spectrometry for the epitaxial silicon wafers of Examples 4 and 5. The horizontal axis of Figure 6 represents the depth from the surface of the epitaxial silicon wafer, and the vertical axis represents the carbon concentration. It can be seen that the interface between the silicon epitaxial layer and the silicon wafer is located at a depth of 4 µm from the surface of the epitaxial silicon wafer.

[0076] In Example 4, in which the silicon wafer was not subjected to argon annealing, the width of the low-carbon concentration layer was less than 1 μm. On the other hand, in Example 5, in which argon annealing was performed before the formation of the silicon epitaxial layer, a low-carbon concentration layer with a thickness of 7.6 μm was formed in the wafer depth direction from the interface between the silicon epitaxial layer and the silicon wafer, and the carbon concentration of the silicon epitaxial layer was below the detection limit (2×10 15 atoms / cm 3 It was confirmed that The thickness of the low-carbon-concentration layer depends on the argon annealing conditions. For example, when the heat treatment conditions were changed to 1150°C × 10 min, all other conditions were the same as in Example 5, the thickness was 5.6 μm, 7.3 μm at 1200°C × 10 min, 7.3 μm at 1150°C × 60 min, 9.4 μm at 1200°C × 60 min, and 15 μm at 1300°C × 60 min. That is, the thickness of the low-carbon-concentration layer can be adjusted as desired by adjusting the heat treatment temperature and time in argon annealing. That is, the thickness of the low-carbon-concentration layer can be adjusted as desired by adjusting the heat treatment temperature and time in argon annealing. By forming a low-carbon-concentration layer of a predetermined thickness in the surface layer portion of the silicon wafer, the amount of carbon diffusion from the silicon wafer to the epitaxial layer can be reduced.

[0077] [Slip dislocation evaluation] For the following Comparative Examples 4 and 5 and Examples 6 and 7, the presence or absence of slip dislocations (defects along the crystal plane of silicon) was investigated depending on whether or not carbon doping and argon annealing were performed. The specifications and conditions common to the silicon wafers of Comparative Examples 4 and 5 and Examples 6 and 7 are listed below. Resistivity: 0.91mΩ·cm Carbon concentration: 3.87 x 10 16 atoms / cm 3 In Comparative Example 5 and Example 7, argon annealing was performed in an argon gas atmosphere at 1200° C. for 30 minutes. In the following description, "heat treatment corresponding to the epitaxial layer growth conditions" refers to heat treatment performed without introducing raw material source gas into the epitaxial apparatus (Centura (registered trademark) manufactured by Applied Materials, Inc.), and refers to heat treatment at 1150°C for 1 minute in a hydrogen gas atmosphere. <Comparative Example 4> The silicon wafer that was not doped with carbon was subjected to a heat treatment corresponding to the epitaxial layer growth conditions without argon annealing (only the heat treatment was performed, and no silicon epitaxial layer was grown). <Comparative Example 5> The silicon wafer that was not doped with carbon was subjected to argon annealing, and heat treatment corresponding to the epitaxial layer growth conditions was carried out. Example 6 The carbon-doped silicon wafer was subjected to a heat treatment corresponding to the epitaxial layer growth conditions without argon annealing. Example 7 The carbon-doped silicon wafer was subjected to argon annealing, and heat treatment corresponding to the epitaxial layer growth conditions was carried out.

[0078] The presence or absence of slip dislocations observed on the wafer surface was confirmed for each silicon wafer using X-ray topography. As a result, as shown in Figure 7, no slip dislocations were observed in any of the silicon wafers, confirming that slip dislocations do not occur even when highly doped with carbon.

[0079] [Verification of resistivity, carbon concentration, and LPD density] In order to verify the correlation between resistivity, carbon concentration, and LPD density for the following Comparative Examples 6 and 7 and Examples 8 and 9, silicon wafers were manufactured under a plurality of conditions, an epitaxial layer was formed on the surface of each silicon wafer, and the LPD density observed on the surface of the epitaxial layer was measured. The argon annealing in the following Comparative Example 7 and Example 9 is a heat treatment at 1200° C. for 30 minutes in an argon gas atmosphere. <Comparative Example 6> Without carbon doping, single crystal ingots with resistivity ranging from 0.6 mΩ·cm to 1.0 mΩ·cm were grown by doping with phosphorus so that the resistivity of the top end of the straight body of the single crystal ingot was 1.0 mΩ·cm, and multiple silicon wafers with different resistivities were manufactured from the single crystal ingots. A 4 μm thick epitaxial layer was formed on each silicon wafer without argon annealing. <Comparative Example 7> As in Comparative Example 6, single crystal ingots with resistivities ranging from 0.6 mΩ cm to 1.0 mΩ cm were grown without carbon doping, and multiple silicon wafers with different resistivities were manufactured from the single crystal ingots. Each silicon wafer was annealed with argon without carbon doping, and then a 4 μm-thick epitaxial layer was formed.

[0080] Example 8 As in Comparative Example 6, a single crystal ingot with a resistivity range of 0.6 mΩ cm to 1.0 mΩ cm was grown, and a plurality of silicon wafers with different resistivities were produced from the single crystal ingot. 16 atoms / cm 3 However, each silicon wafer was not subjected to argon annealing, and an epitaxial layer having a thickness of 4 μm was formed. Example 9 As in Comparative Example 6, a single crystal ingot with a resistivity range of 0.6 mΩ cm to 1.0 mΩ cm was grown, and a plurality of silicon wafers with different resistivities were produced from the single crystal ingot. 16 atoms / cm 3 After carbon doping was performed so that the silicon wafers had a thickness of 1000 nm, the silicon wafers were subjected to argon annealing, and then an epitaxial layer having a thickness of 4 μm was formed.

[0081] Fig. 8 is a graph showing the relationship between the resistivity of the silicon wafer and the LPD density observed on the surface of the epitaxial layer for each of the epitaxial silicon wafers of Example 8, Example 9, and Comparative Examples 6 and 7. The horizontal axis of Fig. 8 shows the solidification rate of the ingot body portion at the position where the silicon wafer was sliced, when the solidification amount of the entire length of the grown ingot body portion is set to 1.

[0082] 8, in Example 8, in which carbon doping was performed but argon annealing was not performed before the epitaxial growth process, an LPD density of approximately 20,000 particles / wafer was observed in silicon wafers sliced ​​from the top crystal region, which is a position in the ingot body where the solidification ratio is approximately 0.1, confirming the effect of reducing the LPD density, but the LPD density overflowed in silicon wafers sliced ​​from the ingot body where the solidification ratio is approximately 0.3. Furthermore, when silicon wafers sliced ​​from the bottom crystal region were used, the LPD density was able to be reduced to 130 particles / wafer or less, even for silicon wafers with an extremely low resistivity of 0.6 mΩ cm.

[0083] In Example 9, in which silicon wafers were carbon-doped and argon-annealed before epitaxial growth, the LPD density was reduced to 100 / wafer or less, even when silicon wafers cut from the top crystal region were used. This was due to the fact that the high-concentration carbon doping reduced dislocation loop defects and the argon annealing of the silicon wafers eliminated the refined dislocation loop defects. It was revealed that the synergistic effect of the high-concentration carbon doping and argon annealing significantly reduced SFs. On the other hand, when silicon wafers cut from the bottom crystal region (crystal region with a solidification ratio of 0.55 or higher), where the residence time in the SF nucleation temperature zone was shorter, were used, the LPD density was reduced to 10 / wafer or less in all cases.

[0084] On the other hand, in Comparative Example 6, in which no carbon doping was performed and no argon annealing was performed on the silicon wafers, the LPD density overflowed when a silicon wafer sliced ​​from the top crystal region was used, and the LPD density significantly decreased when a silicon wafer sliced ​​from the bottom crystal region was used. However, the LPD density was still 250 LPDs / wafer or more for silicon wafers with a resistivity of 0.6 mΩ cm. In Comparative Example 7, in which no carbon doping was performed and the silicon wafer was subjected to argon annealing before the epitaxial growth process, the LPD density was reduced compared to Comparative Example 6, but when a silicon wafer sliced ​​from the top crystal region was used, the LPD density decreased from 500 / wafer to 1100 / wafer.

[0085] From the above results, 3 × 10 16 atoms / cm 3 It was found that by performing the above carbon doping and by subjecting the silicon wafer to argon annealing before the epitaxial growth process, the LPD density observed on the epitaxial layer surface in all crystalline regions of the single crystal ingot can be made at least 100 LPDs / wafer. Furthermore, even without subjecting the silicon wafer to argon annealing, by performing carbon doping, the LPD density in the bottom crystalline region can be made 130 LPDs / wafer or less. Note that this example does not disclose all experimental examples used in the development, but the inventors have found that the LPD density can be made at least 3.5 × 10 15 atoms / cm 3 It was confirmed that adding carbon at such a high concentration can reduce the LPD density after epitaxial growth processing for silicon wafers with resistivities of 0.6 mΩ·cm to 1.2 mΩ·cm, compared to when no carbon is added.

[0086] [Evaluation of device breakdown voltage characteristics] The device breakdown voltage characteristics were evaluated. Here, device breakdown voltage is one of the quality characteristics of a semiconductor device, and refers to the voltage at which breakdown occurs when the gate and source of a semiconductor device are short-circuited and the voltage between the drain and source is gradually increased.

[0087] There is a concern that oxygen diffusion into the epitaxial layer on which semiconductor devices are fabricated could affect the device's breakdown voltage characteristics. Therefore, the inventors prepared silicon wafers with six different oxygen concentrations, formed silicon epitaxial layers on each silicon wafer, and investigated whether the device's breakdown voltage characteristics differed depending on the oxygen concentration. Furthermore, they investigated whether the device's breakdown voltage characteristics differed depending on whether the silicon wafer was doped with carbon.

[0088] Specifically, a semiconductor device was fabricated for each epitaxial silicon wafer of Samples 1 to 12 shown in Table 1, and a predetermined voltage was applied between the drain and source while the gate and source constituting the semiconductor device were short-circuited. If breakdown occurred, the breakdown voltage characteristics were judged to be "fail," and if no breakdown occurred, the breakdown voltage characteristics were judged to be "good."

[0089] The epitaxial silicon wafers of Samples 1 to 6 were 300 mm in diameter, and had a 4 μm thick silicon epitaxial layer formed on a phosphorus-doped silicon wafer with a resistivity of 0.9 mΩcm.The sample wafers were silicon wafers with six different oxygen concentrations and no carbon added, on which an epitaxial layer was formed. The epitaxial silicon wafers of samples 7 to 12, like samples 1 to 6, were 300 mm in diameter and had a silicon epitaxial layer of 4 μm thick formed on a silicon wafer doped with phosphorus and having a resistivity of 0.9 mΩcm. The carbon concentration was 3.8 × 10 16 atoms / cm 3 These are sample wafers in which an epitaxial layer is formed on each of six silicon wafers with different oxygen concentrations. The carbon concentration and oxygen concentration were measured by polishing the silicon wafer to make it thin, and measuring the concentration at the center of the thickness of the silicon wafer by SIMS.

[0090] [Table 1]

[0091] As shown in Table 1, it was confirmed that carbon doping in Samples 7 to 9 easily caused defects in the device breakdown voltage. However, even when carbon doping was performed, the oxygen concentration was increased to 10×10 17 atoms / cm 3 It has been confirmed that the following can prevent the device from failing in withstanding voltage. [Explanation of symbols]

[0092] 10... epitaxial silicon wafer, 11... silicon wafer, 12... low carbon concentration layer, 13... epitaxial layer, C... center, D... depth.

Claims

1. The diameter is 300 mm, the dopant is phosphorus, the resistivity is 0.6 mΩ cm or more and 1.2 mΩ cm or less, and the carbon concentration is 3.5 × 10 １５ atoms / cm ３ 5x10 or more １７ atoms / cm ３ a silicon wafer, a silicon epitaxial layer on the surface of the silicon wafer; the silicon wafer has a low carbon concentration layer on a surface side in contact with the silicon epitaxial layer, the carbon concentration of the low carbon concentration layer is 0.9 times or less the carbon concentration at the center of the thickness of the silicon wafer, and The epitaxial silicon wafer has a low carbon concentration layer having a depth of 5 μm to 15 μm from the surface of the silicon wafer.

2. The epitaxial silicon wafer according to claim 1, The epitaxial silicon wafer has a resistivity of 1.0 mΩcm or less.

3. The epitaxial silicon wafer according to claim 1, The carbon concentration of the silicon wafer is 1×10 １６ atoms / cm ３ This is the epitaxial silicon wafer.

4. The epitaxial silicon wafer according to claim 1, The oxygen concentration of the silicon wafer is 4×10 １７ atoms / cm ３ 10 x 10 or more １７ atoms / cm ３ Below is an epitaxial silicon wafer.

5. The epitaxial silicon wafer according to claim 1, An epitaxial silicon wafer in which no COPs exist in the silicon wafer.

6. The epitaxial silicon wafer according to claim 1, An epitaxial silicon wafer having an oxide film on the back surface of the silicon wafer.

7. 7. The epitaxial silicon wafer according to claim 6, An epitaxial silicon wafer in which no oxide film is present on the edge and the outer periphery of the back surface of the silicon wafer.

8. The epitaxial silicon wafer according to claim 1, An epitaxial silicon wafer, wherein the density of LPDs of 0.09 μm or larger in size observed on the surface of the silicon epitaxial layer is 130 or less per wafer.

9. The epitaxial silicon wafer according to claim 1, An epitaxial silicon wafer, wherein the density of LPDs of 0.09 μm or larger in size observed on the surface of the silicon epitaxial layer is 100 or less per wafer.

10. The diameter is 300 mm, the dopant is phosphorus, the resistivity is 0.6 mΩ cm or more and 1.2 mΩ cm or less, and the carbon concentration is 3.5 × 10 １５ atoms / cm ３ 5x10 or more １７ atoms / cm ３ 1. A silicon wafer comprising: the silicon wafer has a low carbon concentration layer on a surface thereof; the carbon concentration of the low carbon concentration layer is 0.9 times or less the carbon concentration at the center of the thickness of the silicon wafer, and A silicon wafer, wherein the depth of the low carbon concentration layer is 5 μm or more and 15 μm or less from the surface of the silicon wafer in the thickness direction of the silicon wafer.

11. The silicon wafer according to claim 10, The oxygen concentration of the silicon wafer is 4×10 １７ atoms / cm ３ 10 x 10 or more １７ atoms / cm ３ Below is a silicon wafer.

12. The silicon wafer according to claim 10 or 11, The silicon wafer is free of COPs.

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