Cleaning composition for removing post-etch residues - Patents.com

Abstract

To provide a cleaning composition that aids in the removal of post-etch residues in the production of semiconductors.SOLUTION: There is provided a stock composition comprising: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polyprotic acids or salts thereof, wherein at least one polyprotic acid or salt thereof contains phosphorous.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to compositions for removing post-etch residues and / or titanium-containing hardmask materials from microelectronic devices, and methods for preparing and using the same, which compositions may have high selectivity for titanium-containing materials compared to aluminum nitride and metal interconnect materials on microelectronic devices. [Background technology]

[0002] As device nodes shrink below 10 nanometers (nm) in advanced semiconductor manufacturing, new materials are being introduced for better device performance and manufacturability. Examples of new materials under consideration include cobalt via contacts, aluminum nitride etch stop layers, and titanium nitride barrier layers.

[0003] Titanium nitride has a variety of applications in the semiconductor industry, including hard masks, metal barriers, conductive electrodes, metal gates, and many others. Titanium nitride has excellent metal diffusion blocking properties, which are desirable for barrier materials, and also has a low resistivity of approximately 30-70 μΩ cm after annealing. Titanium nitride films can be fabricated by physical vapor deposition and chemical vapor deposition processes.

[0004] Post-etch cleaning chemistries compatible with cobalt, aluminum nitride, and titanium nitride barrier materials enable manufacturing processes at smaller and more advanced nodes. Because copper (Cu) is still used as an interconnect metal line in the back end of the line (BEOL), cleaning chemistry formulations that are compatible with copper as well as new materials are advantageous. There is a continuing need for cleaning compositions with controlled etch rates and selectivity to titanium nitride hard mask materials over other films in devices, which may include cobalt, copper, aluminum nitride, low-k materials, and titanium nitride barrier materials. Summary of the Invention

[0005] The challenge of post-etch residue removal during the fabrication of microelectronic devices utilizing cobalt via contacts, titanium nitride barrier materials and copper interconnects, aluminum nitride etch stop layers, and titanium nitride hardmask materials can be solved by a composition that has high etch rate selectivity to titanium nitride hardmasks, controllable but low aluminum nitride etch rates, and low but substantially equalized copper and cobalt etch rates. Ideally, the composition would also be compatible with low-k dielectric materials.

[0006] In one aspect, the present invention provides a stock composition comprising a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; a corrosion inhibitor; and a combination of at least two or more polybasic acids or salts thereof, wherein at least one of the polybasic acids or salts thereof contains phosphorus.

[0007] Optionally, the combination of at least two or more polybasic acids or salts thereof can comprise, consist of, or consist essentially of phosphoric acid, phosphonic acid, or salts thereof. Suitably, the combination can comprise, consist of, or consist essentially of phosphoric acid, diphosphonic acid, or combinations thereof.

[0008] Suitably, the combination of at least two or more polybasic acids or salts thereof may include a polycarboxylic acid or salt thereof. Optionally, the polycarboxylic acid may be a polyaminocarboxylic acid. The polycarboxylic acid or salt thereof may include, for example, one or more of oxalic acid and alkyldiaminetetraacetic acid. Optionally, the combination of at least two or more polybasic acids may include a plurality of such polycarboxylic acids or salts thereof.

[0009] In some versions of the composition, the at least two or more polybasic acids or salts thereof can include alkyldiaminetetraacetic acid, and the phosphorus-containing polybasic acid or salts thereof can be diphosphonic acid or phosphoric acid. In other versions of the composition, the at least three or more polybasic acids or salts thereof can include alkyldiaminetetraacetic acid, and the phosphorus-containing polybasic acid or salts thereof can be diphosphonic acid or phosphoric acid.

[0010] Advantageously, the composition may comprise an oxidizing agent, which may suitably comprise a heterocyclic amine N-oxide.

[0011] In some versions of the composition, the oxidizing agent comprising the tetraalkylammonium hydroxide base or quaternary trialkylalkanolamine base and the heterocyclic amine N-oxide together comprise between 10%-35% by weight of the composition.

[0012] Optionally, the heterocyclic amine N-oxide can be present in an amount of 5%-15% by weight. In various embodiments, the heterocyclic amine N-oxide can comprise, consist of, or consist essentially of 4-ethylmorpholine-N-oxide, N-methylpiperidine-N-oxide, 3-methylpyridine N-oxide, NMMO, or a combination thereof. In various embodiments, the heterocyclic amine N-oxide can comprise, consist of, or consist essentially of NMMO.

[0013] The amount of tetraalkylammonium hydroxide base or quaternary trialkylalkanolamine hydroxide base in the composition may suitably be between 5% and 20% by weight.

[0014] The tetraalkylammonium hydroxide base may have the formula [NR1R2R3R4]OH, where R1, R2, R3, and R4 are the same or different and are selected from the group consisting of H and C1-C6 alkyl. The quaternary trialkylalkanolamine hydroxide base may have the formula [RR2R3NR4OH] + [OH] -wherein R1, R2, R3 and R4 are each a lower alkyl group such as methyl, ethyl or propyl.

[0015] In versions of the composition, the corrosion inhibitor can comprise, consist essentially of, or consist of 5-methylbenzotriazole, tolyltriazole, benzotriazole, dimethylbenzotriazole, or combinations thereof.

[0016] In the composition version, the corrosion inhibitor can be 5-methylbenzotriazole, tolyltriazole, or a mixture of 5-methylbenzotriazole and tolyltriazole. The amount of corrosion inhibitor in the composition can optionally be between 0.1% and 5% by weight, for example, between 0.2% and 5% by weight or between 0.4% and 5% by weight.

[0017] The composition may optionally include an organic solvent. Suitably, the organic solvent may include a polar aprotic solvent. The amount of organic solvent in the composition may range, for example, from 10% to 30% by weight. In various embodiments, the organic solvent comprises, consists of, or consists essentially of a glycol ether, such as tetraglyme or butyl carbitol.

[0018] Advantageously, the composition may contain water, which may constitute the balance of the composition. The amount of water in the composition may be, for example, between 60% and 90% by weight.

[0019] The pH of the undiluted composition may suitably be between 10-14.

[0020] One part by weight of the composition can be further combined or diluted with between 0.3-12 parts by weight of a diluted oxidizer to form a diluted composition. In some versions of the present disclosure, the diluted oxidizer is 30% by weight hydrogen peroxide. The pH of the diluted peroxide composition can be between 7-14, and in some versions, between 10-14.

[0021] In various embodiments, the composition can be diluted with an oxidizer to provide a diluted composition having high etch rate selectivity for titanium nitride hard masks over titanium nitride barrier materials, controllable aluminum nitride etch rates, and low but substantially equalized copper and cobalt etch rates, and is compatible with low-k materials as defined above. In various embodiments, the composition can comprise, consist of, or consist essentially of an oxidizer comprising a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base and a heterocyclic amine N-oxide, a corrosion inhibitor comprising 5-methylbenzotriazole, and a combination of at least two or more polybasic acids or salts thereof, wherein at least one of the polybasic acids or salts thereof contains phosphorus.

[0022] In another version, a stock composition that can be diluted with an oxidizer to provide a diluted composition having high etch rate selectivity for titanium nitride hard masks over titanium nitride barrier materials, controllable aluminum nitride etch rates, and low but substantially equalized copper and cobalt etch rates, is compatible with low dielectric constant materials, and comprises, consists of, or consists essentially of: a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine base; an oxidizer comprising a heterocyclic amine N-oxide; a corrosion inhibitor comprising 5-methylbenzotriazole; and a combination of at least three or more polybasic acids or salts thereof, wherein at least one of the polybasic acids or salts thereof contains phosphorus.

[0023] The composition diluted with or combined with a diluted oxidizer can be characterized by the following: an etch rate of a TiN hardmask material film deposited on a substrate by physical vapor deposition at a rate of at least 200 Å / min; an etch rate of a TiN barrier material film deposited on a substrate by a chemical vapor deposition process at a rate of less than 100 Å / min; an etch rate of an AlN layer at a rate of less than 50 Å / min; an etch rate of a copper layer at an etch rate of 2 Å / min or less; an etch rate of a cobalt layer at an etch rate of 2 Å / min or less, or one or more or any combination of these etch rates. The etch rates of the composition diluted with or combined with a diluted oxidizer can be characterized and measured on coupon samples of material immersed in a beaker containing the composition at 50° C. for 30 seconds for a TiN hardmask coupon; 30 seconds for a TiN barrier material film coupon; 1 minute for an AlN coupon; and 30 minutes each for copper and cobalt film coupons. This composition and the peroxide-diluted composition are compatible with low-k materials.

[0024] One version of the present disclosure is a composition comprising, consisting essentially of, an oxidizer comprising a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine hydroxide base and a heterocyclic amine N-oxide (the tetraalkylammonium hydroxide and the oxidizer together comprising between 15% and 30% by weight of the composition), a corrosion inhibitor comprising 5-methylbenzotriazole, and a combination of at least two or more polybasic acids or salts thereof, and in some versions, a combination of at least three or more polybasic acids or salts thereof, each of the polybasic acids or salts being selected from the group consisting of oxalic acid, phosphoric acid, diphosphonic acid, cyclohexanediaminetetraacetic acid, and water. The pH of the composition can be between 12 and 14.

[0025] This composition can be diluted with between 0.3 and 12 parts by weight, and in some versions, between 3 and 10 parts by weight, of 30% by weight hydrogen peroxide (i.e., a 30% by weight hydrogen peroxide solution in water). The composition diluted with or combined with an oxidizer can have a pH of between 10 and 14 and can be characterized by: an etch rate of a TiN hard mask material film deposited on a substrate by physical vapor deposition at a rate of at least 200 Å / min; an etch rate of a TiN barrier material film deposited on a substrate by chemical vapor deposition at a rate of less than 100 Å / min; an etch rate of an AlN material film at a rate of less than 50 Å / min; an etch rate of a copper layer film at an etch rate of 2 Å / min or less; an etch rate of a cobalt layer film at an etch rate of 2 Å / min, or one or more or any combination of these etch rates. The etch rates of the compositions diluted or combined with an oxidizer can be characterized and measured on material coupon samples immersed in a beaker containing the composition at 50° C. for 30 seconds for TiN hardmask material film coupons, 30 seconds for TiN barrier material film coupons, 1 minute for AlN material film coupons, and 30 minutes each for copper and cobalt film coupons. This composition and the peroxide-diluted composition can be compatible with low dielectric constant materials.

[0026] From another aspect, the present invention provides a method of removing post-etch residue and / or titanium-containing hard mask material from a microelectronic device, the method comprising contacting the device with a composition according to any aspect or embodiment of the present invention. The device may suitably comprise a titanium-containing hard mask material and one or more of AlN, Cu, and Co.

[0027] From yet another aspect, the present invention provides use of a composition according to any aspect or embodiment of the present invention for removing post-etch residues and / or titanium-containing hard mask materials from a microelectronic device while minimizing AlN etching. DETAILED DESCRIPTION OF THE INVENTION

[0028] The need for cleaning compositions with high etch rates and selectivity for titanium nitride hardmask materials over other films in microelectronic devices can be met by a composition comprising a tetraalkylammonium hydroxide base or a quaternary trialkylalkanolamine, an oxidizer optionally comprising a heterocyclic amine N-oxide, a corrosion inhibitor optionally comprising 5-methylbenzotriazole, and a combination of at least two or more polybasic acids or salts thereof, and in some versions, three or more polybasic acids or salts thereof, where at least one of the polybasic acids or salts thereof contains phosphorus. When the composition is diluted with an oxidizer such as hydrogen peroxide, the diluted composition can have high etch rate selectivity for titanium nitride hardmask over titanium nitride barrier materials, controllable but low aluminum nitride etch rates, and low but substantially equal copper and cobalt etch rates, while also being compatible with the low-k material underlying the hardmask.

[0029] Compositions according to versions of the present disclosure contain one or more etchant compounds. In some versions of the present disclosure, the etchant can include a tetraalkylammonium hydroxide base. More generally, the tetraalkylammonium cation has the formula [NR1R2R3R4] + (Wherein R1, R2, R3 and R4 are the same or different from each other and are H, C1-C6 alkyl (e.g., methyl, ethyl, propyl, butyl, pentyl, hexyl), C6-C 10 aryl (e.g., benzyl), and any combination thereof). One version of the tetraalkylammonium cation can have (R1 = R2 = R3 = R4 = CH3). For example, a version of the tetraalkylammonium hydroxide of the present disclosure can have the formula [NR1R2R3R4]OH, where R1, R2, R3, and R4 are the same or different and are selected from the group consisting of H, C1-C6 alkyl. Examples of tetraalkylammonium hydroxides can include, but are not limited to, tetramethylammonium hydroxide, ammonium hydroxide, and combinations thereof.

[0030] In some versions of the disclosure, the etchant compound has the formula [R1R2R3NR4OH] + [OH] - The compound may be a quaternary trialkylalkanolamine having the formula: (wherein R1, R2, R3, and R4 are each a lower alkyl group such as methyl, ethyl, or propyl). Choline hydroxide is a quaternary ethanolamine compound according to the above formula, where R1, R2, and R3 are each a methyl group and R4 is an ethyl group. Examples of trialkylalkanolamines include, but are not limited to, trimethylpropanolamine, triethylethanolamine, dimethylethylethanolamine, diethylmethylethanolamine, dimethylethylpropanolamine, diethylmethylpropanolamine, and triethylpropanolamine.

[0031] The one or more etchant compounds may optionally comprise between 1% and 20% by weight of the composition. In some versions, the one or more etchant compounds may comprise between 5% and 20% by weight of the composition. In other versions, the one or more etchant compounds may comprise between 8% and 12% by weight of the composition.

[0032] The stock composition of the disclosed version may include an oxidizing agent comprising a heterocyclic amine N-oxide. The heterocyclic amine N-oxide oxidizing agent may comprise, consist of, or consist essentially of 3,5-dimethylpyridine N-oxide, 3-methylpyridine N-oxide, 4-methylmorpholine-4-oxide, 2-methylpyridine N-oxide, N-methylpiperidine N-oxide, 4-ethylmorpholine N-oxide, and combinations of one or more thereof. In some versions, the heterocyclic amine N-oxide may be prepared in situ using an unoxidized precursor molecule in the presence of an oxidizing agent. For example, 4-methylmorpholine may be reacted with sufficient oxidizing agent to form 4-methylmorpholine-4-oxide, N-methylpiperidine may be reacted with an oxidizing agent to form N-methylpiperidine N-oxide, and 4-ethylmorpholine may be reacted with sufficient oxidizing agent to form 4-ethylmorpholine N-oxide. In some versions, the unoxidized precursor can be combined or mixed with a tetraalkylammonium hydroxide or quaternary trialkylalkanolamine, an inhibitor, and two or more polybasic acids and their salts (in some versions, three or more polybasic acids and their salts) to form a stock composition. The amount of heterocyclic amine N-oxide in the stock composition can be between 1% and 15% by weight. In some versions, the amount of heterocyclic amine N-oxide in the stock composition can be between 8% and 12% by weight. In some versions of the present disclosure, the amount of heterocyclic amine N-oxide is high enough to also act as a solvent for the stock composition or to improve post-etch cleaning of sidewall residues in diluted compositions compared to compositions in which the heterocyclic amine N-oxide is absent or at a low concentration (less than 1% by weight).

[0033] Corrosion inhibitors or corrosion inhibitor systems can be used to protect contact metals such as Cu and Co. The corrosion inhibitors can comprise, consist of, or consist essentially of one or more corrosion inhibitors including 5-methylbenzotriazole (mBTA), tolytriazole, a mixture of the 4- and 5-isomers, or a combination including mBTA and tolytriazole. In some versions, the amount of one or more corrosion inhibitors in the stock composition can be 0.4%-5% by weight. In other versions, the amount of one or more corrosion inhibitors in the stock composition can be 0.5%-2% by weight. In yet other versions, the amount of corrosion inhibitor can be 1.3%-1.5% by weight.

[0034] The range of amounts of inhibitor in the stock composition is that amount that provides an essentially inhibitor-independent Cu etch rate of 2 Å / min or less and a cobalt etch rate of 2 Å / min or less, as measured on coupon samples immersed in a beaker containing the stock composition diluted with 3 parts 30% HO to 10 parts 30% HO for 30 minutes for copper coupons and 30 minutes for cobalt coupons at 50° C. Also, with this concentration range of inhibitor in the peroxide-diluted stock composition, the copper and cobalt etch rates can be within 1 Å / min or less of each other, and in some versions, the copper and cobalt etch rates are within 0.25 Å / min or less of each other.

[0035] Chelating or metal-complexing systems of two or more, and in some versions, three or more, polybasic acids and their salts, polycarboxylic acids and their salts, or combinations of polybasic acids and polycarboxylic acids and their salts can be used in the stock composition. The polycarboxylic acids can optionally be polyaminopolycarboxylic acids. The metal-complexing systems of the stock composition can comprise, consist of, or consist essentially of these acids, their salts, or combinations thereof. In some versions, the polybasic acids and their salts, (polyamino)polycarboxylic acids and their salts, or combinations of polybasic acids and (polyamino)polycarboxylic acids and their salts can be selected from the group consisting of alkyldiaminetetraacetic acids, such as, but not limited to, ethylenediaminetetraacetic acid (EDTA) and cyclohexanediaminetetraacetic acid, phosphates, phosphoric acid, diphosphonic acids of the formula (CR5R6)((OH)2P=O)2 (where R5 and R6 can be the same or different), and any combination thereof. In some versions, the diphosphonic acid can have the formula (CR5R6)((OH)2P=O)2, where R5 and R6 can be (-H and -H), or (-H and -OH), or (-CH3 and -OH). When R5 and R6 are (-CH3 and -OH), the bisphosphonic acid can be called etidronic acid or 1-hydroxyethane-1,1-diphosphonic acid (HEDP). Each of the polybasic acids has a K of 1E-2 or less. a1 In some versions, the polybasic acid, (polyamino)polycarboxylic acid, combinations thereof and salts thereof can be oxalic acid, cyclohexanediaminetetraacetic acid, phosphoric acid, and etidronic acid.

[0036] One suitable range for the amount of inhibitor in the stock composition is one that results in an inhibitor concentration-dependent AlN etch rate that can be controllably varied from about 5 Å / min or less (high inhibitor concentration) to about 50 Å / min (low inhibitor concentration that is ¼ of the high concentration). Suitably, a high amount of inhibitor can result in a 90% lower AlN etch rate compared to a stock composition containing a low amount of inhibitor, while reducing the TiN PVD material etch rate by a minimum of less than 10%. Versions of the stock composition can be prepared that, when diluted with 4 parts by weight of 30% by weight hydrogen peroxide, have AlN etch rates that vary with the amount of phosphorus-containing polybasic acid. When four times the amount of phosphorus-containing polybasic acid is present, the AlN etch rate can be less than 5 Å / min (e.g., 0 Å / min, 1 Å / min, 2 Å / min, 3 Å / min, 4 Å / min); when three times the amount of phosphorus-containing polybasic acid is present, the AlN etch rate can be less than 10 Å / min; when two times the amount of phosphorus-containing polybasic acid is present, the AlN etch rate can be less than 25 Å / min; when one time the amount of phosphorus-containing polybasic acid is present, the AlN etch rate can be about 50 Å / min or less. Without the phosphorus-containing polybasic acid, the AlN etch rate can be about 125 Å / min. The low AlN etch rate allows for removal of the TiN hard mask with minimal etching of the AlN.

[0037] The amount of polybasic acid, polybasic acid salt, (polyamino)polycarboxylic acid and its salt, or combination thereof in the stock composition can be greater than 0 wt % and optionally less than 1 wt %. In some versions, the amount of polybasic acid, polybasic acid salt, (polyamino)polycarboxylic acid and its salt, or combination thereof in the stock composition is between 0.1 wt % and 3 wt %, e.g., between 0.1 wt % and 1 wt %. In other versions, the amount of polybasic acid, acid salt, polyaminopolycarboxylic acid and its salt, or combination thereof in the stock composition is between 0.15 wt % and 0.85 wt %. The concentration of phosphorus-containing polybasic acid or its salt in the stock composition can be greater than 0.15 wt %. In some versions, the concentration of phosphorus-containing polybasic acid or its salt in the stock composition can be between 0.15 wt % and 0.7 wt %. The amount of phosphorus-containing polybasic acid or its salt in the stock composition can be greater than 0.7 wt % in the composition recycled within the process tool. In the stock composition version, the amount (wt %) of polybasic acid or acid salt is less than the amount (wt %) of inhibitor.

[0038] The stock composition can be diluted with additional diluent oxidizer, e.g., a heterocyclic amine N-oxide in an amount greater than 5%-15% by weight, to form a diluted composition. The diluted composition can be prepared, for example, by adding hydrogen peroxide to the stock composition. For example, the diluted composition can be prepared by mixing 1 part stock composition with 0.3 parts 30% (w / w) HO up to 12 parts 30% HO. In some versions, the stock solution can be diluted by mixing 1 part stock composition with 3 parts 30% (w / w) HO up to 10 parts 30% (w / w) HO.

[0039] In versions of the present disclosure, the etchant composition comprises, consists of, or consists essentially of an oxidizer comprising, consisting of, or consisting essentially of a tetraalkylammonium hydroxide or quaternary trialkylalkanolamine base in an amount of 5%-20% by weight of the composition and a heterocyclic amine N-oxide in an amount of 5%-15% by weight of the composition (together comprising between 10%-35% by weight of the composition).

[0040] In some versions of the composition, the oxidizing agent comprising the tetraalkylammonium hydroxide base or quaternary trialkylalkanolamine base and the heterocyclic amine N-oxide together comprise between 15%-30% by weight of the composition.

[0041] The corrosion inhibitor system comprising, consisting of, or consisting essentially of 5-methylbenzotriazole may comprise 0.4%-2% by weight of the composition, and the chelating agent system of two, and in some versions, three or more polybasic acids, polybasic acid salts, and polyaminopolycarboxylic acids and their salts may comprise 0.1%-1% by weight of the composition. The remainder of the stock composition may be water. In some stock composition versions, the amount of water may range from about 60%-90% by weight of the composition; in other stock composition versions, the amount of water in the stock composition may range from 62%-87% by weight; and in still other stock composition versions, the amount of water in the stock composition may range from 70%-82% by weight.

[0042] The acid salts can be inorganic, such as, but not limited to, sodium, potassium, calcium, lithium magnesium, ammonium, or organic, such as the tetraalkylammonium salts mentioned above. When a component in a stock composition is a salt, the salt can be hydrated or anhydrous.

[0043] Water may comprise from about 60% to about 90% by weight of the stock composition before dilution with an oxidizer composition such as 30% or 50% by weight hydrogen peroxide.

[0044] The pH of the stock composition may be 10 or greater, in some versions a pH of 12 or greater, and in still other versions, approximately or at a pH of 14. The pH of a stock composition diluted with a peroxide, such as hydrogen peroxide (30 wt% HO in water), may be 8 or greater, and in some versions, the pH of a stock composition diluted with a peroxide, such as hydrogen peroxide (30 wt% HO) in water, is 10 or greater. In still other versions, the pH of a stock composition diluted with a peroxide, such as hydrogen peroxide (30 wt% HO) in water, may be 12 or greater. In still yet other versions, the pH of a stock composition diluted with a peroxide, such as hydrogen peroxide (30 wt% HO) in water, may be between 12-14.

[0045] The stock composition can be mixed with hydrogen peroxide or other strong oxidizer to form a composition that can be used for post-etch residue removal. For example, 1 part stock composition can be diluted with, for example, 3 parts oxidizer to 10 parts oxidizer. In one version of the present disclosure, 1 part stock composition can be diluted with, for example, 3 parts 30% HO to 10 parts 30% HO to form a diluted cleaning composition. The diluted cleaning composition can be used for post-etch residue removal. The oxidizer can be mixed with the stock composition in bulk at the manufacturer or by chemical blending immediately before contacting the diluted composition with devices on a substrate.

[0046] The disclosed stock and diluted cleaning compositions are stable and do not phase separate; they are homogeneous and the components are completely miscible. The stock or diluted stock compositions can be prepared by mixing the various components by weight using a laboratory scale. These compositions can be used to remove post-etch residues from wafers containing PVD TiN hard masks, AlN stop etch layers with copper interconnect lines and cobalt via contacts, and CVD TiN barrier materials.

[0047] The at least one organic solvent may comprise at least one water-miscible organic solvent. The organic solvent and water may optionally form a water-organic solvent system, which together comprise between about 60% and about 90% by weight of the composition. Suitable solvents include, for example, glycol ethers. In some versions, the organic solvent comprises, consists of, or consists essentially of tetraglyme.

[0048] TiN hard mask materials, TiN barrier materials, AlN etch stop materials, cobalt, and copper may contain non-stoichiometric materials such as TiNx. These non-stoichiometric film materials may be formed during deposition. Other impurities, such as carbon, oxygen, and silicon, may also be present in these materials. The compositions, etch rate coupon test characterization, and methods for processing microelectronic devices described herein can be used to process stoichiometric or non-stoichiometric materials.

[0049] One version of the present disclosure is a method for removing post-plasma etch residue and / or hard mask material from a microelectronic device having the residue and / or hard mask thereon, the method comprising contacting the microelectronic device with a stock composition diluted with an oxidizing agent, such as (for example) hydrogen peroxide, for a time sufficient to at least partially clean the residue and / or hard mask from the microelectronic device.

[0050] The stock composition can be as described with respect to any aspect or embodiment herein. For example, the diluted oxidizer stock solution can include a tetraalkylammonium hydroxide base, at least one amine-N-oxide oxidizer, an inhibitor including 5-methylbenzotriazole, a chelating agent system of two or more polybasic acids or salts thereof, and water, wherein the pH of the diluted oxidizer composition ranges from about 10 to about 14. The method can include contacting the diluted peroxide composition with a substrate having one or more microelectronic devices with a TiN hard mask under conditions selected from the group consisting of a contact time ranging from about 1 minute to about 60 minutes, a temperature of the diluted oxidizer composition ranging from about 30° C. to about 70° C., and combinations thereof. The microelectronic device can include a layer selected from the group consisting of a titanium-containing layer, a low-k layer, a copper interconnect, cobalt, and an aluminum-containing etch stop layer such as AlN, and combinations thereof. The method may include contacting the oxidizer-diluted composition by a process selected from the group consisting of: spraying the oxidizer-diluted composition onto the surface of the microelectronic device; immersing the microelectronic device in a sufficient amount of the oxidizer-diluted composition; contacting the surface of the microelectronic device with another material that is saturated with the oxidizer-diluted composition; and contacting the microelectronic device with a circulating bath of the oxidizer-diluted composition.

[0051] Without wishing to be bound by theory, the combination of acid or its salt stabilizes the oxidant, removes redeposited Cu left behind by the etching process, and also protects the etch stop material AlN, slowing and allowing control of the etch stop layer from the device.

[0052] Versions of the primary cleaning composition include an etchant such as TMAH and an oxidizer such as NMMO, which, together with other ingredients, selectively remove PVD-deposited TiN layers at high etch rates relative to chemical vapor deposited TiN materials, AlN layers, and copper and cobalt materials used in interconnects. In addition to the etchant and oxidizer, the primary cleaning composition includes a corrosion inhibitor mixture that protects Cu and Co, and a chelating agent mixture that stabilizes the oxidizer, removes redeposited Cu left by the etching process, and slows / controls the removal of etch stop materials from the device. [Example]

[0053] Example 1 A stock reference composition, TitanKlean® 9C (TK9C), available from Entegris Inc. of Billerica, Massachusetts, was used as the reference diluted cleaning composition. Nine parts of 30% HO were added to one part of the TK9C composition to prepare the reference diluted cleaning composition TK9C(HO).

[0054] An additional stock composition containing an oxidizer comprising a tetraalkylammonium hydroxide base and a heterocyclic amine N-oxide (the tetraalkylammonium hydroxide and oxidizer together constituted between 15% and 30% by weight of the composition); a corrosion inhibitor comprising 5-methylbenzotriazole; and a combination of at least two or more polybasic acids or salts selected from oxalic acid, phosphoric acid, diphosphonic acid, cyclohexanediaminetetraacetic acid, and water was diluted with 4 parts 30% by weight hydrogen peroxide. The amount of water in the stock composition was 70% to 82% by weight.

[0055] The etch rates of diluted peroxide stock solutions and the reference diluted composition TK9C(H2O2) on TiN, AlN, Cu, and Co were measured on coupon samples having coatings of these materials. The coupon samples were immersed in a beaker containing the diluted cleaning composition heated to 50°C. The coupon samples were immersed for 30 seconds for TiN coupons (PVD or CVD), 1 minute for AlN coupons, and 30 minutes for copper and cobalt coupons. The coupon film etch rates were measured using (x-ray fluorescence) XRF for AlN, Cu, and Co coupons and ellipsometry for TiN coupons.

[0056] The PVD TiN and AlN etch rates of TK9C(H2O2) and a representative peroxide diluted stock composition were evaluated. Etch rate results for a representative peroxide diluted stock cleaning composition were evaluated using 1x, 2x, 3x, and 4x amounts of added AlN inhibitor (phosphate).

[0057] Test results show high AlN etch rates of over 100 Å / min for the TK9C(H 2 O 2 ) composition (no added phosphate).

[0058] The addition of phosphate compounds to dilute peroxide stock solutions was observed to control the AlN etch rate. The AlN etch rate was successfully controlled by the amount of AlN inhibitor, while the etch rates of other films remained unchanged. The AlN etch rate varied depending on the inhibitor concentration. With a 4x inhibitor concentration, the AlN etch rate was observed to be less than 5 Å / min; with a 3x inhibitor concentration, the AlN etch rate was observed to be less than 10 Å / min; with a 2x inhibitor concentration, the AlN etch rate was observed to be less than 25 Å / min; and with a 1x inhibitor concentration, the AlN etch rate was observed to be approximately 50 Å / min or less. Without an inhibitor, the AlN etch rate was approximately 125 Å / min.

[0059] PVD TiN etch rates were between approximately 200 Å / min and 250 Å / min for both the TK9C(H2O2) composition (no added phosphate) and dilute stock solutions of peroxide containing between 1 and 4 volumes of phosphate inhibitor.

[0060] The selectivity observed for PVD deposited TiN over CVD TiN material deposits was 1:2-1:3 or between about 65 Å / min-100 Å / min to about 100 Å / min-150 Å / min for dilute stock solutions of peroxide containing between 1 and 4 parts of phosphate inhibitor.

[0061] These formulations provided copper etch rates of less than 2 Å / min and cobalt etch rates of 2 Å / min. The copper and cobalt etch rates were observed to be between about 0.25 Å / min and 0.5 Å / min of each other in dilute stock solutions of peroxide containing between 1 and 4 times the amount of phosphate inhibitor.

[0062] Example 2 Comparative stock compositions (CE-1, CE-2, and CE-3), and 14 example stock compositions (E1-14) were prepared according to Table 1: Table 1 TIFF0007758494000001.tif255170

[0063] The compositions were diluted with HO at a ratio of 1:9 or 1:4 (composition:HO), as shown in Table 2 below. The etch rates of the diluted compositions on TiN, AlN, Cu, and Co were measured on coupon samples having coatings of these materials. The coupon samples were immersed in a beaker containing the diluted cleaning composition, heated to 50°C, and stirred at 360 rpm. The coupon samples were immersed for 30 seconds for TiN coupons (formed by physical vapor deposition), 1 minute for AlN coupons, and 30 minutes for copper and cobalt coupons. The coupon film etch rates were measured using (x-ray fluorescence) XRF for AlN, Cu, and Co coupons, and ellipsometry for TiN coupons. The results are shown in Table 2: Table 2 TIFF0007758494000002.tif95170

[0064] PVD TiN etch rates were between about 200 Å / min and 400 Å / min for all compositions. Copper and cobalt etch rates were observed to be consistently low or non-existent.

[0065] The AlN etch rate was controlled by the addition of phosphoric acid, while the other etch rates were not significantly changed.

[0066] The results show that the effect of phosphoric acid on AlN etch rate is also observed when tetraglyme or butylcarbitol is used as the organic solvent in the absence of the oxidant NMMO.

[0067] Example 3 This example illustrates the preparation of additional stock cleaning compositions E15-17, which were prepared by mixing the reagents in the weight percentages shown in Table 3. Table 3 TIFF0007758494000003.tif32170

[0068] The specific formulations of compositions E15-17 and additional compositions E18-21 are shown in Table 4: Table 4 TIFF0007758494000004.tif44170DIW: Deionized water TMAH: tetramethylammonium hydroxide NMMO: N-methylmorpholine oxide CDTA: cyclohexanediaminetetraacetic acid HEDP: 1-hydroxyethane-1,1-diphosphonic acid 5m-BTA: 5-methyl-benzotriazole

[0069] The compositions were diluted with HO at a ratio of 1:9 or 1:4 (composition:HO), as shown in Table 5 below. The etch rates of the diluted compositions on TiN, AlN, Cu, and Co were measured on coupon samples having coatings of these materials. The coupon samples were immersed in a beaker containing the diluted cleaning composition heated to 50°C. The coupon samples were immersed for 30 seconds for TiN coupons (formed by physical vapor deposition), 1 minute for AlN coupons, and 30 minutes for copper and cobalt coupons. The coupon film etch rates were measured using (x-ray fluorescence) XRF for AlN, Cu, and Co coupons, and ellipsometry for TiN coupons. The results are shown in Table 5: Table 5 TIFF0007758494000005.tif45170

[0070] The results show that composition E-6, prepared using bisphosphonate instead of phosphoric acid, exhibited a particularly low AlN etch rate, with slightly increased Cu and Co etch rates.

[0071] Versions of the disclosed compositions can be used in post-etch residue removal cleaning processes to remove, for example, PVD-deposited TiN hard masks (HMs) and post-etch residues from substrates including low-k materials underlying the TiN HM, AlN etch stop layers, copper interconnects, cobalt via contacts, and chemical vapor deposited TiN barrier materials (BMs). Versions of the disclosed compositions diluted with oxidizers are compatible with low-k materials, remove post-etch residues, have high TiN HM etch rates, and have high etch selectivity over TiN BMs, AlN, copper, and cobalt materials.

[0072] While various compositions and methods have been described, it is to be understood that the invention is not limited to the particular molecules, compositions, designs, methodologies, or protocols described, as these may vary. It is also to be understood that the terminology used herein is for the purpose of describing particular versions or embodiments only, and is not intended to limit the scope of the present invention, which is limited only by the appended claims.

[0073] It should also be noted that, as used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to a "chelating agent" can refer to one or more chelating agents and their equivalents known to those of skill in the art, and the like. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. Methods and materials similar or equivalent to those described herein can be used in the practice or testing of embodiments of the present invention. All publications mentioned herein are incorporated by reference in their entirety. Nothing herein should be construed as an admission that the invention is not entitled to antedate such disclosure by virtue of prior invention. "Optional" or "optionally" or "advantageously" or "suitably" means that the subsequently described event or circumstance may or may not occur, and that the description includes both cases in which the event occurred and cases in which it did not occur. All numerical values ​​herein, whether explicitly stated or not, can be modified by the term "about." The term "about" generally refers to a range of numbers that one of ordinary skill in the art would consider equivalent to the recited value (i.e., having the same function or result). In some embodiments, the term "about" refers to ±10% of the stated value, and in other embodiments, the term "about" refers to ±2% of the stated value. Although compositions and methods are described in terms of "comprising" (which should be interpreted to mean "including, but not limited to") various components or steps, the compositions and methods can also "consist essentially of" or "consist of" various components and steps. Thus, in some embodiments, such terms should be interpreted as an essentially closed or closed group of elements.

[0074] While the present invention has been shown and described with respect to one or more embodiments, equivalent alterations and modifications will occur to those skilled in the art upon reading and understanding this specification and the accompanying drawings. The present invention includes all such modifications and variations, and is limited only by the scope of the following claims. Furthermore, while particular features or aspects of the invention have been disclosed with respect to only one of several implementations, such features or aspects can be combined with one or more other features or aspects of other implementations, as may be desirable or advantageous for any given or particular application. Furthermore, to the extent the terms "includes," "having," "has," "with," or variations thereof are used in either the detailed description or the claims, such terms are intended to be as inclusive as the term "comprising." Also, the term "exemplary" is intended merely to mean an example, rather than the best. It should also be appreciated that the features, layers and / or elements depicted herein are shown in particular dimensions and / or orientations relative to one another for simplicity and ease of understanding, and that the actual dimensions and / or orientations may differ substantially from those depicted herein.

Claims

1. Formula [NR １ R ２ R ３ R ４ ]OH (wherein, R １ , R ２ , R ３ and R ４ are the same or different, H, and C １ -C ６ a base having a quaternary trialkyl alkanolamine base selected from the group consisting of alkyl; a corrosion inhibitor; A combination of at least two or more acids or salts thereof; wherein at least one of the acids or salts thereof contains phosphorus; In the composition, １ R ２ R ３ R ４ ]OH or quaternary trialkylalkanolamine base is between 5% and 20% by weight, the pH of the stock composition is between 10-14; the amount of said corrosion inhibitor in the composition is between 0.4% and 5% by weight; the combination of at least two or more acids or salts thereof includes phosphoric acid, phosphonic acid, or salts thereof, or phosphoric acid, diphosphonic acid, or combinations thereof, or polycarboxylic acid, or salts thereof; the corrosion inhibitor comprises 5-methylbenzotriazole, tolyltriazole, benzotriazole, dimethylbenzotriazole, or a combination thereof; The amount of the combination of the at least two or more acids or salts thereof in the composition is between 0.1% and 3% by weight, and the composition does not contain any aliphatic alkanolamines.

2. The composition described in claim 1, wherein the polycarboxylic acid or its salt comprises one or more of oxalic acid and alkyldiaminetetraacetic acid.

3. The composition of claim 1 further comprising an oxidizing agent comprising a heterocyclic amine N-oxide.

4. The composition of claim 3, wherein the heterocyclic amine N-oxide comprises 4-ethylmorpholine-N-oxide, N-methylpiperidine-N-oxide, 3-methylpyridine N-oxide, NMMO, or a combination thereof.

5. The quaternary trialkylalkanolamine is represented by the formula [R １ R ２ R ３ NR ４ OH] ＋ [OH] － (In the formula, R １ , R ２ , R ３ and R ４ and each is a lower alkyl group.

6. 1. A method for removing post-etch residues and / or titanium-containing hard mask materials from a microelectronic device, comprising contacting said device, optionally comprising a titanium-containing hard mask material and one or more of AlN, Cu, and Co, with a stock composition to form a cleaning composition, said stock composition comprising: Formula [NR １ R ２ R ３ R ４ ]OH (wherein, R １ , R ２ , R ３ and R ４ are the same or different, H, and C １ -C ６ a base having a quaternary trialkyl alkanolamine base selected from the group consisting of alkyl; a corrosion inhibitor; A combination of at least two or more acids or salts thereof; wherein at least one of the acids or salts thereof contains phosphorus; In the composition, １ R ２ R ３ R ４ ]OH or quaternary trialkylalkanolamine base is between 5% and 20% by weight, the pH of the stock composition is between 10-14; the amount of said corrosion inhibitor in the composition is between 0.4% and 5% by weight; the combination of at least two or more acids or salts thereof includes phosphoric acid, phosphonic acid, or salts thereof, or phosphoric acid, diphosphonic acid, or combinations thereof, or polycarboxylic acid, or salts thereof; the corrosion inhibitor comprises 5-methylbenzotriazole, tolyltriazole, benzotriazole, dimethylbenzotriazole, or a combination thereof; the amount of the combination of the at least two or more acids or salts thereof in the composition is between 0.1% and 3% by weight; The method, wherein the composition is free of aliphatic alkanolamines.

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