Dicing device, semiconductor chip manufacturing method, and semiconductor chip

Abstract

This dicing device 1 comprises: a laser radiation unit 13a for radiating a laser L in a Df direction extending along each of a plurality of streets Ws on a wafer W1, thereby forming a modified layer Wm within the wafer W1; a first imaging unit 14a capable of imaging the wafer W1 after the modified layer Wm is formed; and a shared attachment member 13b to which both of the laser radiation unit 13a and the first imaging unit 14a are attached.

Description

[Technical Field]

[0001] The present invention relates to a dicing device, a semiconductor chip manufacturing method, and a semiconductor chip, and more particularly to a dicing device equipped with a laser irradiation unit that forms a modified layer in a wafer, a semiconductor chip manufacturing method, and a semiconductor chip. [Background technology]

[0002] A dicing machine having a laser irradiation unit that forms a modified layer in a wafer is known in the art. Such a dicing machine is disclosed in Japanese Patent No. 6281328, for example.

[0003] The above-mentioned Japanese Patent Publication No. 6281328 discloses a laser dicing device equipped with a laser head that forms modified regions in a wafer. This laser dicing device includes a laser movement mechanism, a microscope, and a microscope movement mechanism.

[0004] The laser head in the above-mentioned Japanese Patent No. 6281328 is attached to a laser movement mechanism positioned above the wafer. The microscope is configured to photograph the state of cracks due to modified regions appearing on the backside of the wafer. The microscope is attached to a microscope movement mechanism positioned below the wafer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 6281328 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the laser dicing apparatus of Patent Publication No. 6281328, the laser head is attached to a laser moving mechanism, and the microscope is attached to a microscope moving mechanism that is provided separately from the laser moving mechanism, which results in the problem that the number of parts used in the mounting structure of the laser head and microscope in the laser dicing apparatus increases and the mounting structure of the laser head and microscope in the laser dicing apparatus becomes complicated.

[0007] This invention has been made to solve the above-mentioned problems, and one object of the invention is to provide a dicing device, a semiconductor chip manufacturing method, and a semiconductor chip that can suppress an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit and imaging unit of the dicing device. [Means for solving the problem]

[0008] A dicing device according to a first aspect of the present invention includes a laser irradiation unit that forms a modified layer in a wafer by irradiating a laser in a processing direction that extends along each of a plurality of streets of the wafer, a first imaging unit that can image the wafer after the modified layer has been formed, and a common mounting member to which both the laser irradiation unit and the first imaging unit are attached. a control unit that controls the first imaging unit to continue exposing the first imaging unit to an illumination intensity and exposure time that are set to match a value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the crack can be recognized when a crack caused by the modified layer is imaged by the first imaging unit after the modified layer is formed on the wafer; Equipped with.

[0009] As described above, the dicing device according to the first aspect of the present invention includes a common mounting member to which both the laser irradiation unit and the first imaging unit are attached. By mounting the laser irradiation unit and the first imaging unit on the common mounting member, it is possible to prevent an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit and the first imaging unit in the dicing device. A dicing apparatus according to a second aspect of the present invention includes a laser irradiation unit that forms a modified layer in a wafer by irradiating a laser in a processing direction that extends along each of a plurality of streets of the wafer, a first imaging unit that can image the wafer after the modified layer has been formed, and a common mounting member to which both the laser irradiation unit and the first imaging unit are attached, the mounting member being disposed in a state where their positions are fixed in the horizontal and vertical directions, the laser irradiation unit and the first imaging unit being attached to the mounting member being positioned fixed in the horizontal direction, and the dicing apparatus further includes a table unit that moves the wafer in the processing direction while holding the wafer, and the first imaging unit The wafer is imaged after a modified layer has been formed on the wafer by laser irradiated from the laser irradiation unit while the wafer is moved in the processing direction by the table unit while being fixed in position in the horizontal direction, and when cracks caused by the modified layer are imaged by the first imaging unit after the modified layer has been formed on the wafer, the wafer held on the table unit is moved in the processing direction relative to the first imaging unit while being fixed in position by the mounting member, and a control unit is further provided which controls the first imaging unit to continue exposing to an illumination intensity and for an exposure time which is set to match the value obtained by multiplying a predetermined illumination intensity at which cracks can be recognized by a predetermined exposure time. This makes it possible to reliably acquire an image in which the crack can be recognized, even when the first imaging unit is continuously exposed to light and imaging is performed. A dicing device according to a third aspect of the present invention includes a laser irradiation unit that forms a modified layer in a wafer by irradiating a laser in a processing direction extending along each of a plurality of streets on the wafer, a first imaging unit that can image the wafer after the modified layer has been formed, and a common mounting member to which both the laser irradiation unit and the first imaging unit are attached, and further includes a control unit that controls the first imaging unit to continue exposing a predetermined portion of the specified street to create a panning image while forming a modified layer on the wafer with the laser along the processing direction on a predetermined street among the plurality of streets. This makes it possible to obtain a panning image displayed using a brightness value obtained by accumulating the brightness values ​​of predetermined parts of a specified street, thereby making it possible to inspect for cracks that have occurred in the wafer due to the modified layer based on a relatively small number of images. A dicing device according to a fourth aspect of the present invention comprises a laser irradiation unit that forms a modified layer in a wafer by irradiating a laser in a processing direction extending along each of a plurality of streets on the wafer, a first imaging unit that can image the wafer after the modified layer has been formed, and a common mounting member to which both the laser irradiation unit and the first imaging unit are attached, and further comprises a control unit that controls the first imaging unit to continuously expose a predetermined portion of the predetermined street while forming a modified layer on the wafer by the laser along the processing direction on a predetermined street among the plurality of streets, thereby imaging cracks on the surface of the wafer on the side of the first imaging unit that are caused by the modified layer and capturing a panning image with the first imaging unit. Therefore, if the image is a panning image of the crack on the surface on the first imaging unit side, it is possible to reliably confirm that the crack has reached the surface of the wafer, and therefore it is possible to confirm the portion where the wafer is not properly divided because the crack has not reached the surface of the wafer. As a result, it is possible to change the laser irradiation conditions and irradiate the laser again on the predetermined street, and it is also possible to identify the portion where the wafer is not properly divided and perform a subsequent detailed inspection, thereby preventing an increase in the number of detailed inspections.

[0010] In the dicing device according to the first aspect, the mounting member is preferably arranged in a state where its position is fixed in the horizontal direction and the up-down direction, and the laser irradiation unit and the first imaging unit are mounted to the mounting member in a state where their positions are fixed in the horizontal direction. With this configuration, it is possible to suppress an increase in the number of parts and an increase in the complexity of the moving mechanism for the laser irradiation unit and the moving mechanism for the first imaging unit, compared to when the laser irradiation unit and the first imaging unit each have a moving mechanism for moving them in the horizontal direction.

[0011] In this case, preferably, the apparatus further includes a table section that moves the wafer in the processing direction while holding the wafer, and the first imaging section, while being fixed in position in the horizontal direction, moves the wafer in the processing direction by the table section, and images the wafer after a modified layer has been formed on the wafer by the laser irradiated from the laser irradiation section. With this configuration, it is possible to image the cracks formed in the wafer by moving the wafer by the table section, so it is possible to avoid providing a movement mechanism for moving the imaging section in the horizontal direction.

[0013] In the dicing apparatus according to the second aspect, Preferably, the control unit is configured to control the first imaging unit to image the crack based on an imaging execution section for the first imaging unit, a predetermined exposure time, and a predetermined illumination intensity, which are set to further satisfy imaging conditions that the first imaging unit is exposed to a portion of a predetermined street among the plurality of streets where a modified layer is formed by the laser, and the first imaging unit is not exposed to a portion of the predetermined street where a modified layer is not formed by the laser. With this configuration, the first imaging unit does not image a portion of the predetermined street where a modified layer is not formed by the laser, but images only a portion of the predetermined street where a modified layer is formed by the laser and a crack is formed, making it possible to obtain an image in which the crack is more clearly displayed.

[0014] In the dicing device according to the first aspect, the first imaging unit is preferably attached to the mounting member together with the laser irradiation unit in a state in which the laser focal position of the laser irradiation unit and the optical center of the first imaging unit are aligned along the processing direction in a plan view. With this configuration, during processing of the modified layer, the portion of the wafer processed by the laser irradiated from the laser irradiation unit moves directly below the first imaging unit as the wafer moves in the processing direction, so that processing of the modified layer by the laser irradiated from the laser irradiation unit and imaging of cracks in the wafer by the first imaging unit can be performed in parallel.

[0015] The dicing apparatus according to the first aspect preferably further includes a second imaging unit attached to the attachment member together with the first imaging unit and the laser irradiation unit, and configured to image the alignment marks of the wafer, the first imaging unit having a higher resolution than the second imaging unit. With this configuration, the high-resolution first imaging unit can capture more detailed images of cracks occurring in the wafer, enabling accurate crack inspection.

[0017] In the dicing apparatus according to the third aspect, Preferably, the control unit is configured to, when forming a modified layer on the wafer and using the first imaging unit to capture an image of cracks on the surface of the wafer facing the first imaging unit caused by the modified layer, control the first imaging unit to continue exposing to light and acquire a panning image based on the illumination intensity and exposure time of the first imaging unit set to match a value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the cracks can be recognized. With this configuration, the cracks are clearly displayed in the panning image captured by continuing the exposure of the first imaging unit, allowing the control unit to reliably recognize the cracks.

[0018] In this case, the control unit is preferably configured to control the first imaging unit to image the crack based on an imaging execution section by the first imaging unit, a predetermined exposure time, and a predetermined illumination intensity that are set to further satisfy imaging conditions that the first imaging unit is exposed to a portion of the predetermined street where a modified layer is formed by the laser, and the first imaging unit is not exposed to a portion of the predetermined street where a modified layer is not formed by the laser. With this configuration, the first imaging unit does not image a portion of the predetermined street where a modified layer is not formed by the laser, but images only a portion of the predetermined street where a modified layer is formed by the laser and a crack is formed, making it possible to obtain a panning image in which the crack is more clearly displayed.

[0019] In this case, the control unit is preferably configured to control acquisition of illumination intensity for imaging the predetermined portion of the predetermined street by the first imaging unit while forming a modified layer on the wafer by irradiating the wafer with the laser along the processing direction, based on an exposure time preset for the first imaging unit for imaging the predetermined portion of the predetermined street by the first imaging unit while forming a modified layer on the wafer by irradiating the wafer with the laser along the processing direction, and an exposure time and illumination intensity preset for the first imaging unit for inspecting cracks formed by the modified layer after forming the modified layer on all of the plurality of streets. With this configuration, the illumination intensity when imaging the predetermined street by the first imaging unit can be appropriately adjusted, thereby preventing the panning image captured by the first imaging unit from being too dark or too bright.

[0020] In the dicing machine equipped with the control unit, the control unit is preferably configured to control the execution of a first inspection to inspect whether the processing of the modified layer by the laser is defective, based on a plurality of average luminance values ​​obtained for each pixel group by averaging the luminance values ​​of each of the plurality of pixels included in a plurality of pixel groups of a panning image in which pixel groups, each including a plurality of pixels aligned in the processing direction, are aligned in a direction perpendicular to the processing direction. With this configuration, the luminance values ​​of each of the plurality of pixels included in the pixel group can be combined into an average luminance value to perform the first inspection, thereby preventing the processing of the control unit when performing the first inspection from becoming complicated.

[0021] In the dicing apparatus in which the control unit is configured to perform the first inspection based on a plurality of average luminance values, the control unit is preferably configured to perform control to acquire a plurality of crack luminance values ​​equal to or greater than the threshold value and a position range in a direction perpendicular to the processing direction of a plurality of pixel groups having the plurality of crack luminance values, based on an average luminance value in a position range of a predetermined street among the plurality of average luminance values ​​and a preset threshold value. With this configuration, by acquiring a plurality of crack luminance values ​​corresponding to crack portions formed by the modified layer from the plurality of average luminance values ​​in the position range of the predetermined street, it is possible to exclude average luminance values ​​that are not necessary for the first inspection from the inspection, thereby ensuring the inspection accuracy of the first inspection.

[0022] In the dicing device in which the control unit is configured to perform control to acquire a plurality of crack brightness values, the control unit is preferably configured to perform control to acquire a positional deviation amount of a crack formed by a modified layer based on a difference between a position within a positional range of the plurality of crack brightness values ​​and a preset reference position, and to perform a first inspection. With this configuration, by acquiring the positional deviation amount of the crack, it is possible to correct the relative horizontal positional deviation between the laser irradiation unit and the wafer so as to reduce the positional deviation amount of the crack before performing processing to form a modified layer on streets where no modified layer is formed, thereby making it possible to form a modified layer at an appropriate position on the wafer.

[0023] In the dicing machine configured such that the control unit performs control to acquire the misalignment amount, the control unit is preferably configured to perform control to correct the misalignment of the laser focal position in a direction perpendicular to the processing direction based on the misalignment amount before processing the modified layer with the laser on a street after the next street following the predetermined street for which the multiple average brightness values ​​were acquired. With this configuration, the time required for processing the modified layer of the wafer with the laser on the next street can be secured as at least the processing time for performing processing to acquire the misalignment amount, thereby ensuring sufficient processing time for the control unit to acquire the misalignment amount.

[0024] In the dicing device configured such that the control unit controls acquisition of multiple crack luminance values, the control unit is preferably configured to control a first inspection to inspect whether cracks formed by the modified layer are appropriate based on at least one of a comparison of an average value of the multiple crack luminance values ​​with a predetermined reference average luminance range and a comparison of a width of a range in a direction perpendicular to the processing direction in which multiple pixel groups corresponding to the multiple crack luminance values ​​are arranged with a predetermined reference width range. With this configuration, by comparing the average value of the multiple crack luminance values ​​with the predetermined reference average luminance range in the first inspection, it is possible to determine whether the luminance value of the portion corresponding to the crack is sufficiently large, thereby identifying a decrease in luminance value due to the crack being interrupted midway. Furthermore, by comparing the width of the range of the multiple crack luminance values ​​with the predetermined reference width range, it is possible to identify an increase in the width of the crack luminance value in the portion corresponding to the crack in a panning image, which is caused by the wafer or the laser irradiation unit moving in a direction oblique to the processing direction extending along the street when forming a modified layer on the wafer.

[0025] In the dicing device in which the control unit is configured to control acquisition of a plurality of crack luminance values, the control unit is preferably configured to control notification to an operator when the inspection result of the first inspection based on the plurality of crack luminance values ​​is found to be defective. With this configuration, the operator can recognize the defect.

[0026] In a dicing device in which the control unit is configured to perform a first inspection based on multiple average brightness values, the control unit is preferably configured to set up a second inspection to perform a second inspection, in which the cracks formed by the modified layer are re-inspected to determine whether they are defective after the modified layer is formed on all of the multiple streets of the wafer, based on the inspection results of the first inspection on the multiple streets that show that the processing of the modified layer is defective.By configuring in this way, the number of inspection objects in the second inspection can be reduced compared to when cracks formed on all of the multiple streets of the wafer are inspected in the second inspection, thereby suppressing an increase in the processing load on the control unit for the second inspection.

[0027] The first aspect of this invention 5 The method for manufacturing a semiconductor chip according to this aspect includes the steps of: forming a modified layer in a wafer by irradiating a laser from a laser irradiation unit in a processing direction extending along each of a plurality of streets of a wafer provided with a plurality of semiconductor chips; and mounting the wafer after the modified layer has been formed on a mounting member common to the laser irradiation unit. Take a photo and dividing the wafer into a plurality of semiconductor chips along dividing lines formed by expanding the elastic sheet member by the expanding section. The imaging step includes, when imaging a crack caused by the modified layer by the imaging unit after the modified layer is formed on the wafer, continuing to expose the imaging unit to an illumination intensity and for an exposure time that is set to match a value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the crack can be recognized. .

[0028] The first aspect of this invention 5 In the semiconductor chip manufacturing method according to this aspect, as described above, the wafer after the modified layer is formed is attached to the same attachment member as the laser irradiation unit. Take a photo There is provided a step of capturing an image by the imaging unit. B-shotSince the imaging unit is attached to a common mounting member, the laser irradiation unit and the imaging unit in the dicing device B-shot Therefore, a method for manufacturing a semiconductor chip can be obtained that can suppress an increase in the number of parts and complexity in the mounting structure of the image portion.

[0029] The first aspect of this invention 6 The semiconductor chip according to the aspect includes a laser irradiation unit that forms a modified layer in the wafer by irradiating a laser in a processing direction that extends along each of a plurality of streets of a wafer on which a plurality of semiconductor chips are provided, and an imaging unit that can image the wafer after the modified layer has been formed. Na photo The imaging section, the laser irradiation section and B-shot A common mounting member to which both the image section and the a control unit that controls the imaging unit to continue exposing the imaging unit to an illumination intensity and exposure time that are set to match a value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the crack can be recognized, when the imaging unit captures an image of a crack caused by the modified layer after the modified layer is formed on the wafer; The wafer is manufactured by a dicing machine including:

[0030] The first aspect of this invention 6 In the semiconductor chip according to this aspect, as described above, the laser irradiation portion and B-shot The laser beam irradiation unit and the imaging unit are mounted on a common mounting member. B-shot Since the imaging unit is attached to a common mounting member, the laser irradiation unit and the imaging unit in the dicing device B-shot It is possible to obtain a semiconductor chip that can suppress an increase in the number of parts and complexity in the mounting structure of the image portion.

[0032] In the dicing apparatus according to the fourth aspect, Preferably, the control unit is configured to, when forming a modified layer on the wafer and using the first imaging unit to capture an image of cracks on the surface of the wafer facing the first imaging unit caused by the modified layer, control the first imaging unit to continue exposing to light and capture a panning image based on an illumination intensity and exposure time of the first imaging unit that are set to match a value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the cracks can be recognized. With this configuration, the cracks are clearly displayed in the panning image captured by continuing the exposure of the first imaging unit, allowing the control unit to reliably recognize the cracks.

[0033] In the dicing apparatus according to the third aspect, Preferably, the apparatus further includes a table unit that moves the wafer in the processing direction while holding the wafer, the mounting member being arranged in a state where its position is fixed in the horizontal and vertical directions, and the control unit is configured to control the first imaging unit to continuously expose the first imaging unit to light at the predetermined streets and capture a panning image with the first imaging unit while forming a modified layer on the wafer with the laser at the predetermined streets by moving the wafer held on the table unit in the processing direction relative to the first imaging unit whose position is fixed by the mounting member. With this configuration, by capturing an image of the crack with the first imaging unit in a fixed position, the focal position of the first imaging unit can be kept constant, and a panning image in which the crack is clearly displayed can be obtained.

[0034] In the dicing apparatus according to the fourth aspect, Preferably, the first imaging unit is attached to the mounting member together with the laser irradiation unit with the laser focal position of the laser irradiation unit and the optical center of the first imaging unit aligned along the machining direction in a plan view, and the control unit is configured to control the wafer to move relative to the laser irradiation unit and the first imaging unit in the machining direction until the laser focal position reaches an end of the predetermined street in the machining direction, and then continue the relative movement of the wafer to extend the imaging of the crack by the first imaging unit to capture a panning image. Here, because the laser focal position of the laser irradiation unit and the optical center of the first imaging unit are aligned along the machining direction, when the laser focal position reaches an end of the predetermined street in the machining direction, the crack between the laser focal position of the laser irradiation unit and the optical center of the first imaging unit is not imaged by the first imaging unit. Therefore, by extending the imaging of the crack by the first imaging unit, the crack can be imaged by the first imaging unit, and therefore the crack formed in the predetermined street can be reliably imaged by the first imaging unit as much as necessary.

[0035] In the dicing machine in which the control unit is configured to control the extended capture of the panning image, the control unit is preferably configured to control the extended capture of the crack by the first imaging unit to capture the panning image based on imaging conditions having information on an imaging implementation interval based on the larger of a first distance based on a minimum value of the exposure time of the first imaging unit and a second distance based on a maximum value of the illumination intensity of the first imaging unit. With this configuration, the imaging implementation interval is set so as not to exceed the respective settable numerical limits of the minimum value of the exposure time and the maximum value of the illumination intensity of the first imaging unit, making it possible to obtain a panning image in which the crack is recognizable.

[0036] In the dicing machine in which the control unit is configured to control capturing of extended panning images, the control unit is preferably configured to perform image processing to amplify the luminance value included in the panning image captured by the first imaging unit at the specified street when the imaging section in which the first imaging unit captures an extended image of a crack at the specified street is a distance that makes it impossible to set an exposure time and illumination intensity that allows the crack to be recognized in the panning image. With this configuration, even if the exposure time and illumination intensity of the first imaging unit exceed their respective settable limits, the first imaging unit can capture an image of the crack within the respective settable ranges of the exposure time and illumination intensity of the first imaging unit, and then amplify the luminance value included in the captured panning image to obtain a panning image in which the crack is recognized.

[0037] In the dicing machine in which the control unit is configured to control the extended panning image capture, the control unit is preferably configured to stop capturing the crack by the first imaging unit and control the first imaging unit to move to the next street where a modified layer will be formed when the laser focal position reaches the end of the processing direction of the predetermined street in a preset imaging execution section in which the extension of the crack imaging by the first imaging unit is not set, when the length of the predetermined street in the processing direction is longer than the distance between the laser focal position and the optical center of the first imaging unit. This configuration makes it possible to obtain crack information necessary for crack-based inspection while minimizing the time required to move from the predetermined street to the next street, thereby ensuring the accuracy of the inspection and preventing an increase in the processing time required to form a modified layer on the wafer.

[0038] In the dicing device, the control unit is preferably configured to control the extended capture of the panning image by the first imaging unit when the length of the predetermined street in the processing direction is shorter than the distance between the laser focal position and the optical center of the first imaging unit. In a preset imaging execution section for capturing cracks by the first imaging unit, the control unit is configured to extend the capture of the panning image by continuing the relative movement of the wafer after the laser focal position reaches the end of the predetermined street in the processing direction. In this case, if the laser focal position moves to the next street after reaching the end of the predetermined street in the processing direction, the crack on the predetermined street cannot be captured. Therefore, by extending the capture of the crack by the first imaging unit, the crack can be captured by the first imaging unit even when the length of the predetermined street in the processing direction is short. [Effects of the Invention]

[0039] According to the present invention, as described above, it is possible to suppress an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit and the imaging unit in the dicing device. [Brief explanation of the drawings]

[0040] [Figure 1] 1 is a plan view showing a semiconductor wafer processing device provided with a dicing device and an expanding device according to a first embodiment. [Figure 2] 1 is a plan view showing a wafer ring structure processed in the semiconductor wafer processing apparatus according to the first embodiment. [Figure 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. [Figure 4] FIG. 2 is a plan view of a dicing device disposed adjacent to the expanding device according to the first embodiment. [Figure 5] 10 is a side view of the dicing device arranged adjacent to the expanding device according to the first embodiment, as viewed from the Y2 direction side. FIG. [Figure 6] FIG. 1 is a plan view of an expanding device according to a first embodiment. [Figure 7] FIG. 2 is a side view of the expanding device according to the first embodiment as viewed from the Y2 direction side. [Figure 8] FIG. 2 is a side view of the expanding device according to the first embodiment as viewed from the X1 direction side. [Figure 9] 1 is a block diagram showing a control configuration of a semiconductor wafer processing apparatus according to a first embodiment. [Figure 10] 4 is a flowchart of the first half of a semiconductor chip manufacturing process by the semiconductor wafer processing apparatus according to the first embodiment. [Figure 11] 10 is a flowchart of the second half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment. [Figure 12] 2 is a plan view showing a plurality of streets on a wafer of the dicing device according to the first embodiment. FIG. [Figure 13] FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 12. [Figure 14] 3 is a side view showing a state in which a modified layer is formed on a wafer by the laser irradiation unit of the dicing apparatus according to the first embodiment. FIG. [Figure 15] 3 is a plan view showing a state in which a modified layer is formed on a wafer by the laser irradiation unit of the dicing apparatus according to the first embodiment. FIG. [Figure 16] 1 is a side view showing a state in the middle of forming a modified layer on a wafer by the laser irradiation unit of the dicing apparatus according to the first embodiment. FIG. [Figure 17] 3 is a schematic diagram showing a panning image of a predetermined street captured by a high-resolution camera of the dicing device according to the first embodiment. FIG. [Figure 18] 4 is a schematic diagram showing a plurality of average brightness values ​​of a panning image captured by a high-resolution camera of the dicing device according to the first embodiment. FIG. [Figure 19] 10 is a graph showing a plurality of average brightness values ​​of a panning image captured by a high-resolution camera of the dicing device according to the first embodiment. [Figure 20] FIG. 4 is a schematic diagram showing a range for distinguishing whether the positional deviation of a crack in a panning image is good or bad in the dicing device according to the first embodiment. [Figure 21] 5A to 5C are schematic diagrams showing correction of the wafer position in the Y direction performed to correct misalignment in the dicing apparatus according to the first embodiment. [Figure 22] FIG. 4 is a schematic diagram showing a range for identifying whether a crack in a panning image is continuous or not in the dicing device according to the first embodiment. [Figure 23] FIG. 4 is a schematic diagram showing a range for distinguishing whether the width of a crack in a panning image is good or bad in the dicing device according to the first embodiment. [Figure 24] 10 is a graph showing a case where a plurality of widths are acquired in a panning image captured by a high-resolution camera of the dicing device according to the first embodiment. [Figure 25]10 is a schematic diagram showing a second inspection being performed on a portion for which the inspection result of the first inspection is defective in the dicing apparatus according to the first embodiment. [Figure 26] 10 is a plan view showing a state in which modified layers have been formed on all of a plurality of streets of a wafer in the dicing apparatus according to the first embodiment. FIG. [Figure 27] 3 is a schematic diagram showing cutting channel information of a wafer in the dicing device according to the first embodiment. FIG. [Figure 28] 3 is a schematic diagram showing cutting line information for a wafer in the dicing apparatus according to the first embodiment. FIG. [Figure 29] 4 is a schematic diagram showing information on the number of intersections of a wafer in the dicing device according to the first embodiment. FIG. [Figure 30] 3 is a schematic diagram showing intersections on a wafer other than those in a mask region in the dicing apparatus according to the first embodiment. FIG. [Figure 31] FIG. 31 is an enlarged view of the Zm portion in FIG. 30. [Figure 32] 4 is a schematic diagram showing a state in which an identification graphic is superimposed on an intersection image in the dicing device according to the first embodiment. FIG. [Figure 33] 10 is a schematic diagram showing a state in which an identification graphic is further superimposed on an intersection image in the dicing device according to the first embodiment. FIG. [Figure 34] 4 is a schematic diagram showing a part of a crack in an intersection image acquired by superimposing an identification graphic on the intersection image in the dicing device according to the first embodiment. FIG. [Figure 35] 4 is a schematic diagram showing an intersection image of a meandering crack in the dicing device according to the first embodiment. FIG. [Figure 36] 10 is a schematic diagram showing an intersection image in a state where a crack is interrupted in the dicing device according to the first embodiment. FIG. [Figure 37] 4 is a schematic diagram showing information on the center point and length of a part of a crack in an intersection image acquired by the dicing device according to the first embodiment. FIG. [Figure 38]1 is a block diagram showing a semiconductor wafer processing system including a semiconductor wafer processing apparatus and an external control device according to a first embodiment. [Figure 39] FIG. 4 is a schematic diagram showing a first setting change screen displayed on a display unit of an external control device of the semiconductor wafer processing system according to the first embodiment. [Figure 40] FIG. 10 is a schematic diagram showing a second setting change screen displayed on the display unit of the external control device of the semiconductor wafer processing system according to the first embodiment. [Figure 41] FIG. 10 is a schematic diagram showing a third setting change screen displayed on the display unit of the external control device of the semiconductor wafer processing system according to the first embodiment. [Figure 42] FIG. 10 is a schematic diagram showing a fourth setting change screen displayed on the display unit of the external control device of the semiconductor wafer processing system according to the first embodiment. [Figure 43] 10 is a histogram showing the number of defective and non-defective cases displayed on a display unit of an external control device of the semiconductor wafer processing system according to the first embodiment. [Figure 44] 10 is a flowchart of a crack inspection process of a dicing control calculation unit of the semiconductor wafer processing device according to the first embodiment. [Figure 45] FIG. 10 is a plan view showing a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a second embodiment. [Figure 46] 10 is a side view of a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a second embodiment, as viewed from the Y2 direction. FIG. [Figure 47] 10 is a side view of a semiconductor wafer processing apparatus provided with a dicing apparatus and an expanding apparatus according to a second embodiment, as viewed from the X1 direction. FIG. [Figure 48] FIG. 10 is a block diagram showing a control configuration of a semiconductor wafer processing apparatus according to a second embodiment. [Figure 49] 10 is a flowchart of the first half of a semiconductor chip manufacturing process by the semiconductor wafer processing apparatus according to the second embodiment. [Figure 50]10 is a flowchart of the second half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the second embodiment. [Figure 51] FIG. 10 is a schematic diagram showing a state in which four identification frames are arranged in an intersection image of the dicing device in the first and second embodiments. [Figure 52] FIG. 10 is a schematic diagram showing a state in which one identification frame is arranged in an intersection image of the dicing device in the first and second embodiments. [Figure 53] FIG. 10 is a plan view showing a semiconductor wafer processing device provided with a dicing device and an expanding device according to a third embodiment. [Figure 54] FIG. 10 is a block diagram showing a semiconductor wafer processing system including a semiconductor wafer processing apparatus and an external control device according to a third embodiment. [Figure 55] FIG. 10 is a schematic diagram showing a state in which a modified layer is formed on a wafer while an image of a crack on the surface of the wafer is being captured in the dicing apparatus of the third embodiment. [Figure 56] FIG. 10 is a schematic diagram showing an imaging implementation section and a non-imaging implementation section when the focal position of the laser irradiation unit reaches the end of a specified street that is longer than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera in the dicing device of the third embodiment. [Figure 57] FIG. 11 is a schematic diagram showing a non-imaging section in a dicing device of a third embodiment when the focal position of the laser irradiation unit reaches the end of a specified street that is shorter than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera. [Figure 58] 10 is a schematic diagram showing first to fifth still images captured by a high-resolution camera in the dicing device of the third embodiment. FIG. [Figure 59] 10 is a graph showing an example of brightness values ​​corresponding to pixel positions of a first still image captured by a high-resolution camera in the dicing device of the third embodiment. [Figure 60] 10 is a graph showing an example of brightness values ​​corresponding to pixel positions of a third still image captured by a high-resolution camera in the dicing device of the third embodiment. [Figure 61] 10 is a graph showing an example of brightness values ​​corresponding to pixel positions of a fifth still image captured by a high-resolution camera in the dicing device of the third embodiment. [Figure 62] FIG. 10 is a schematic diagram showing a panning image captured by a high-resolution camera in a dicing device of the third embodiment, with the value obtained by multiplying a predetermined exposure time by a predetermined illumination intensity being set to match the value obtained by multiplying the exposure time by the illumination intensity of the high-resolution camera. [Figure 63] This is a schematic diagram showing that in the external control device of the third embodiment, an extension of the imaging of cracks by the high-resolution camera is set for a specific street that is longer than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera. [Figure 64] This is a schematic diagram showing that in the external control device of the third embodiment, an extension of the imaging of cracks by the high-resolution camera is set for a specific street that is shorter than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera. [Figure 65] A schematic diagram showing that in the external control device of the third embodiment, the imaging of cracks by the high-resolution camera is not extended for a specific street that is shorter than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera. [Figure 66] FIG. 11 is a schematic diagram showing a case in which the imaging of a crack by the high-resolution camera is extended for a predetermined street that is longer than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera in the dicing device of the third embodiment. [Figure 67] 10 is a schematic diagram showing a case in which the high-resolution camera extends an image of a crack on a predetermined street that is shorter than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera in the dicing device of the third embodiment. FIG. [Figure 68] 10 is a graph showing average brightness values ​​of a panning image captured by a high-resolution camera of the dicing device of the third embodiment, in a state in which a plurality of average brightness values ​​included in the panning image are amplified. [Figure 69]This is a plan view showing a case in which, in a dicing device of the third embodiment, for a specific street that is longer than the distance between the focal position of the laser irradiation unit and the optical center of the high-resolution camera, the high-resolution camera moves to the next street without extending the imaging of the crack. [Figure 70] 10 is a flowchart of a crack inspection process of a dicing control calculation unit of a semiconductor wafer processing device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0041] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings.

[0042] [First embodiment] The configuration of a semiconductor wafer processing apparatus 100 according to a first embodiment of the present invention will be described with reference to FIGS.

[0043] (Semiconductor wafer processing equipment) 1, the semiconductor wafer processing apparatus 100 is an apparatus for processing a wafer W1 provided in a wafer ring structure W. The semiconductor wafer processing apparatus 100 is configured to form a modified layer Wm (see FIG. 13) on the wafer W1 and to divide the wafer W1 along the modified layer Wm to form a plurality of semiconductor chips Ch (see FIG. 8).

[0044] 2 and 3, the wafer ring structure W will be described. The wafer ring structure W includes a wafer W1, a sheet member W2, and a ring-shaped member W3.

[0045] The wafer W1 is a thin, circular plate made of crystals of a semiconductor material that is used to make semiconductor integrated circuits. A modified layer Wm is formed inside the wafer W1 along the dividing line by processing the wafer in the semiconductor wafer processing apparatus 100. That is, the wafer W1 is processed so that it can be divided along the dividing line. The sheet member W2 is a stretchable adhesive tape. An adhesive layer is provided on the upper surface W21 of the sheet member W2. The wafer W1 is attached to the adhesive layer of the sheet member W2. The ring-shaped member W3 is a metal frame that is ring-shaped in a plan view. The ring-shaped member W3 is attached to the adhesive layer of the sheet member W2 while surrounding the wafer W1.

[0046] The semiconductor wafer processing apparatus 100 is equipped with a dicing apparatus 1 and an expanding apparatus 2. Hereinafter, the vertical direction is referred to as the Z direction, the upward direction as the Z1 direction, and the downward direction as the Z2 direction. The horizontal direction perpendicular to the Z direction in which the dicing apparatus 1 and the expanding apparatus 2 are aligned is referred to as the X direction, the X direction toward the expanding apparatus 2 in the X direction is referred to as the X1 direction, and the X direction toward the dicing apparatus 1 in the X direction is referred to as the X2 direction. The horizontal direction perpendicular to the X direction is referred to as the Y direction, one side of the Y direction is referred to as the Y1 direction, and the other side of the Y direction is referred to as the Y2 direction.

[0047] (dicing equipment) As shown in Figures 1, 4, and 5, the dicing device 1 is configured to form a modified layer Wm by irradiating a laser beam L having a wavelength that is transparent to the wafer W1 along the dividing lines (streets Ws). The modified layer Wm refers to cracks and voids formed inside the wafer W1 by the laser beam L. The method of forming the modified layer Wm on the wafer W1 in this way is called dicing.

[0048] Specifically, the dicing device 1 includes a base 11, a chuck table unit 12, a laser unit 13, and an imaging unit 14. The chuck table unit 12 is an example of the "table unit" in the claims.

[0049] The base 11 is a base on which the chuck table 12 is placed. The base 11 has a rectangular shape in a plan view.

[0050] <Chuck table section> The chuck table 12 includes a suction unit 12a, a clamp unit 12b, a rotation mechanism 12c, and a table movement mechanism 12d. The suction unit 12a is configured to suction the wafer ring structure W onto its upper surface on the Z1 side. The suction unit 12a is a table provided with suction holes and suction lines for suctioning the lower surface of the ring-shaped member W3 of the wafer ring structure W on the Z2 side. The suction unit 12a is supported by the table movement mechanism 12d via the rotation mechanism 12c. The clamp unit 12b is provided at the upper end of the suction unit 12a. The clamp unit 12b is configured to hold the wafer ring structure W held by the suction unit 12a. The clamp unit 12b holds the ring-shaped member W3 of the wafer ring structure W held by the suction unit 12a from the Z1 side. In this manner, the wafer ring structure W is gripped by the suction unit 12a and the clamp unit 12b.

[0051] The rotation mechanism 12c is configured to rotate the suction unit 12a in the circumferential direction around a rotation center axis C extending parallel to the Z direction. The rotation mechanism 12c is attached to the upper end of the table movement mechanism 12d. The table movement mechanism 12d is configured to move the wafer ring structure W in the X direction and the Y direction. The table movement mechanism 12d has an X-direction movement mechanism 121 and a Y-direction movement mechanism 122. The X-direction movement mechanism 121 is configured to move the rotation mechanism 12c in the X1 direction or the X2 direction. The X-direction movement mechanism 121 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Y-direction movement mechanism 122 is configured to move the rotation mechanism 12c in the Y1 direction or the Y2 direction. The Y-direction movement mechanism 122 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0052] <Laser section> The laser unit 13 is configured to irradiate a laser beam L onto the wafer W1 of the wafer ring structure W held by the chuck table 12. The laser unit 13 is disposed on the Z1 side of the chuck table 12. The laser unit 13 includes a laser irradiation unit 13a, a mounting member 13b, and a Z-direction movement mechanism 13c. The laser irradiation unit 13a is configured to irradiate a pulsed laser beam. The mounting member 13b is a frame to which the laser unit 13 and the imaging unit 14 are attached. The Z-direction movement mechanism 13c is configured to move the laser unit 13 in the Z1 or Z2 direction. The Z-direction movement mechanism 13c includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. Note that the laser irradiation unit 13a may be a laser irradiation unit that oscillates a continuous-wave laser beam as the laser beam L, other than a pulsed laser beam, as long as it is capable of forming a modified layer Wm through multiphoton absorption.

[0053] <Imaging unit> The imaging unit 14 is configured to capture an image of the wafer W1 of the wafer ring structure W held by the chuck table 12. The imaging unit 14 is disposed on the Z1 side of the chuck table 12. The imaging unit 14 includes a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction movement mechanism 14c, and a Z-direction movement mechanism 14d. The high-resolution camera 14a is an example of a "first imaging unit" in the claims. The wide-angle camera 14b is an example of a "second imaging unit" in the claims.

[0054] The high-resolution camera 14a and the wide-angle camera 14b are near-infrared imaging cameras. The high-resolution camera 14a has a narrower viewing angle than the wide-angle camera 14b. The high-resolution camera 14a has higher resolution than the wide-angle camera 14b. The wide-angle camera 14b has a wider viewing angle than the high-resolution camera 14a. The wide-angle camera 14b has lower resolution than the high-resolution camera 14a. The high-resolution camera 14a is arranged on the X1 direction side of the laser irradiation unit 13a. The wide-angle camera 14b is arranged on the X2 direction side of the laser irradiation unit 13a. In this way, the high-resolution camera 14a, the laser irradiation unit 13a, and the wide-angle camera 14b are arranged adjacent to each other in this order from the X1 direction side to the X2 direction side.

[0055] The Z-direction moving mechanism 14c is configured to move the high-resolution camera 14a in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 14c has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction moving mechanism 14d is configured to move the wide-angle camera 14b in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 14d has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The chuck table unit 12, laser unit 13, and imaging unit 14 of the dicing apparatus 1 will be described in detail later.

[0056] (Expanding device) As shown in FIGS. 1, 6, and 7, the expanding device 2 is configured to divide the wafer W1 to form a plurality of semiconductor chips Ch (see FIG. 8). The expanding device 2 is also configured to form sufficient gaps between the plurality of semiconductor chips Ch. Here, a modified layer Wm is formed on the wafer W1 by irradiating the wafer W1 with a laser L having a wavelength that is transparent to the wafer W1 along dividing lines (streets Ws) in the dicing device 1. In the expanding device 2, the wafer W1 is divided along the modified layer Wm that was previously formed in the dicing device 1, thereby forming a plurality of semiconductor chips Ch.

[0057] Therefore, in the expanding device 2, the wafer W1 is divided along the modified layer Wm by expanding the sheet member W2. In addition, in the expanding device 2, the gaps between the plurality of semiconductor chips Ch formed by division are widened by expanding the sheet member W2.

[0058] The expansion device 2 includes a base 201, a cassette section 202, a lift-up hand section 203, a suction hand section 204, a base 205, a cold air supply section 206, a cooling unit 207, an expansion section 208, a base 209, an expansion maintenance member 210, a heat shrink section 211, an ultraviolet irradiation section 212, a squeegee section 213, and a clamp section 214.

[0059] <base> The base 201 is a base on which the cassette unit 202 and the lift-up hand unit 203 are installed. The base 201 has a rectangular shape in a plan view.

[0060] <Cassette section> The cassette unit 202 is configured to be able to accommodate a plurality of wafer ring structures W. The cassette unit 202 includes a wafer cassette 202a, a Z-direction moving mechanism 202b, and a pair of mounting units 202c.

[0061] A plurality of (three) wafer cassettes 202a are arranged in the Z direction. Each wafer cassette 202a has a storage space capable of storing a plurality of (five) wafer ring structures W. The wafer ring structures W are manually supplied and placed in the wafer cassette 202a. The wafer cassette 202a may store one to four wafer ring structures W, or may store six or more wafer ring structures W. One, two, or four or more wafer cassettes 202a may be arranged in the Z direction.

[0062] The Z-direction movement mechanism 202b is configured to move the wafer cassette 202a in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 202b has, for example, a linear conveyor module or a ball screw. The Z-direction movement mechanism 202b also has a mounting table 202d that supports the wafer cassette 202a from below. Multiple mounting tables 202d (three in total) are arranged to match the positions of the multiple wafer cassettes 202a.

[0063] A plurality (five) of pairs of mounting portions 202c are arranged inside the wafer cassette 202a. The ring-shaped member W3 of the wafer ring structure W is placed on the pair of mounting portions 202c from the Z1 direction side. One of the pair of mounting portions 202c protrudes in the X2 direction from the inner surface of the wafer cassette 202a on the X1 direction side. The other of the pair of mounting portions 202c protrudes in the X1 direction from the inner surface of the wafer cassette 202a on the X2 direction side.

[0064] <Lift-up hand part> The lift-up hand section 203 is configured to be able to take out the wafer ring structure W from the cassette section 202. The lift-up hand section 203 is also configured to be able to store the wafer ring structure W in the cassette section 202.

[0065] Specifically, the lift-up hand unit 203 includes a Y-direction movement mechanism 203a and a lift-up hand 203b. The Y-direction movement mechanism 203a has, for example, a linear conveyor module or a ball screw. The lift-up hand 203b is configured to support the ring-shaped member W3 of the wafer ring structure W from the Z2 direction side.

[0066] <Suction hand section> The suction hand portion 204 is configured to suck the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.

[0067] Specifically, the suction hand unit 204 includes an X-direction movement mechanism 204a, a Z-direction movement mechanism 204b, and a suction hand 204c. The X-direction movement mechanism 204a is configured to move the suction hand 204c in the X direction. The Z-direction movement mechanism 204b is configured to move the suction hand 204c in the Z direction. The X-direction movement mechanism 204a and the Z-direction movement mechanism 204b include, for example, a linear conveyor module or a ball screw. The suction hand 204c is configured to suck and support the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side. Here, the suction hand 204c supports the ring-shaped member W3 of the wafer ring structure W by generating a negative pressure.

[0068] <base> 7 and 8, the base 205 is a base on which the expanding section 208, the cooling unit 207, the ultraviolet irradiation section 212, and the squeegee section 213 are mounted. The base 205 has a rectangular shape in a plan view. In FIG. 8, the clamp section 214, which is positioned in the Z1 direction of the cooling unit 207, is indicated by a dotted line.

[0069] <Cold air supply section> The cool air supplying section 206 is configured to supply cool air to the sheet member W2 from the Z1 direction side when the expanding section 208 expands the sheet member W2.

[0070] Specifically, the cold air supply unit 206 has a supply unit main body 206a, a cold air supply port 206b, and a movement mechanism 206c. The cold air supply port 206b is configured to allow cold air supplied from the cold air supply device to flow out. The cold air supply port 206b is provided at the end of the supply unit main body 206a on the Z2 direction side. The cold air supply port 206b is located in the center of the end of the supply unit main body 206a on the Z2 direction side. The movement mechanism 206c has, for example, a linear conveyor module or a ball screw.

[0071] The cold air supply device is a device for generating cold air. The cold air supply device supplies air cooled by a cooling device such as a heat pump. Such a cold air supply device is installed on the base 205. The cold air supply unit 206 and the cold air supply device are connected by a hose (not shown).

[0072] <Cooling unit> The cooling unit 207 is configured to cool the sheet member W2 from the Z2 direction side.

[0073] Specifically, the cooling unit 207 includes a cooling member 207a having a cooling body 271 and a Peltier element 272, and a Z-direction movement mechanism 207b. The cooling body 271 is made of a material with a large heat capacity and high thermal conductivity. The cooling body 271 is made of a metal such as aluminum. The Peltier element 272 is configured to cool the cooling body 271. Note that the cooling body 271 is not limited to aluminum, and may be made of another material with a large heat capacity and high thermal conductivity. The Z-direction movement mechanism 207b is a cylinder.

[0074] The cooling unit 207 is configured to be movable in the Z1 direction or the Z2 direction by a Z-direction movement mechanism 207b, which allows the cooling unit 207 to move to a position where it contacts the sheet member W2 and a position away from the sheet member W2.

[0075] <Expanding section> The expanding section 208 is configured to expand the sheet member W2 of the wafer ring structure W, thereby dividing the wafer W1 along the dividing lines.

[0076] Specifically, the expanding section 208 has an expanding ring 281. The expanding ring 281 is configured to support the sheet member W2 from the Z2 direction side, thereby expanding (expanding) the sheet member W2. The expanding ring 281 has a ring shape in a plan view.

[0077] <base> The base 209 is a base material on which the cold air supply unit 206, the expansion and retention member 210 and the heat shrink unit 211 are mounted.

[0078] <Expansion maintenance member> As shown in FIGS. 7 and 8, the expansion maintaining member 210 is configured to press the sheet member W2 from the Z1 direction side so that the sheet member W2 near the wafer W1 does not shrink due to heating by the heating ring 211a.

[0079] Specifically, the expansion-retaining member 210 includes a pressure ring portion 210a, a lid portion 210b, and an intake portion 210c. The pressure ring portion 210a has a ring shape in a plan view. The lid portion 210b is attached to the pressure ring portion 210a so as to cover the opening of the pressure ring portion 210a. The intake portion 210c is an intake ring having a ring shape in a plan view. Multiple intake ports are formed on the underside of the intake portion 210c on the Z2 direction side. The pressure ring portion 210a is configured to move in the Z direction by a Z-direction movement mechanism 210d. That is, the Z-direction movement mechanism 210d is configured to move the pressure ring portion 210a to a position where it presses the sheet member W2 and to a position away from the sheet member W2. The Z-direction movement mechanism 210d includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.

[0080] <Heat shrink section> The heat shrink section 211 is configured to shrink the sheet member W2 expanded by the expanding section 208 by heating while maintaining the gaps between the plurality of semiconductor chips Ch.

[0081] The heat shrink unit 211 has a heating ring 211a and a Z-direction movement mechanism 211b. The heating ring 211a has a ring shape in a plan view. The heating ring 211a also has a sheathed heater that heats the sheet member W2. The Z-direction movement mechanism 211b is configured to move the heating ring 211a in the Z direction. The Z-direction movement mechanism 211b has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0082] <Ultraviolet irradiation section> The ultraviolet irradiating unit 212 is configured to irradiate the sheet member W2 with ultraviolet rays Ut in order to reduce the adhesive strength of the adhesive layer of the sheet member W2. Specifically, the ultraviolet irradiating unit 212 has an ultraviolet illuminator. The ultraviolet irradiating unit 212 is disposed at the end of the squeegee unit 213 on the Z1 direction side of a pressing unit 213a (described later). The ultraviolet irradiating unit 212 is configured to irradiate the sheet member W2 with ultraviolet rays Ut while moving together with the squeegee unit 213.

[0083] <Squeegee Section> The squeegee unit 213 is configured to expand the sheet member W2 and then locally press the wafer W1 from the Z2 direction side to further divide the wafer W1 along the modified layer Wm. Specifically, the squeegee unit 213 has a pressing unit 213a, a Z-direction moving mechanism 213b, an X-direction moving mechanism 213c, and a rotating mechanism 213d.

[0084] The pressing unit 213a is configured to press the wafer W1 from the Z2 direction side via the sheet member W2 while moving using the rotation mechanism 213d and the X-direction movement mechanism 213c, thereby generating bending stress in the wafer W1 and dividing the wafer W1 along the modified layer Wm. When the pressing unit 213a is raised to an elevated position on the Z1 direction side by the Z-direction movement mechanism 213b, the wafer W1 is pressed via the sheet member W2. When the pressing unit 213a is lowered to a lower position on the Z2 direction side by the Z-direction movement mechanism 213b, the wafer W1 is no longer pressed. The pressing unit 213a is a squeegee.

[0085] The pressing unit 213a is attached to the Z1-direction end of the Z-direction movement mechanism 213b. The Z-direction movement mechanism 213b is configured to move the pressing unit 213a linearly in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 213b is, for example, a cylinder. The Z-direction movement mechanism 213b is attached to the Z1-direction end of the X-direction movement mechanism 213c.

[0086] The X-direction movement mechanism 213c is attached to the end of the rotation mechanism 213d on the Z1 direction side. The X-direction movement mechanism 213c is configured to move the pressing unit 213a linearly in one direction. The X-direction movement mechanism 213c has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0087] In the squeegee unit 213, the pressing unit 213a is raised to a raised position by the Z-direction movement mechanism 213b. In the squeegee unit 213, the pressing unit 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, while the X-direction movement mechanism 213c moves the pressing unit 213a in the Y direction, thereby dividing the wafer W1. In the squeegee unit 213, the Z-direction movement mechanism 213b lowers the pressing unit 213a to a lowered position. In the squeegee unit 213, after the movement of the pressing unit 213a in the Y direction has finished, the rotation mechanism 213d rotates the pressing unit 213a by 90 degrees.

[0088] In the squeegee unit 213, the pressing unit 213a is raised to an elevated position by the Z-direction movement mechanism 213b. In the squeegee unit 213, after the pressing unit 213a rotates 90 degrees, the pressing unit 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, while the pressing unit 213a is moved in the X direction by the X-direction movement mechanism 213c, thereby dividing the wafer W1.

[0089] <Clamp section> The clamp unit 214 is configured to grip the ring-shaped member W3 of the wafer ring structure W. Specifically, the clamp unit 214 has a gripping unit 214a, a Z-direction movement mechanism 214b, and a Y-direction movement mechanism 214c. The gripping unit 214a supports the ring-shaped member W3 from the Z2 direction side and presses the ring-shaped member W3 from the Z1 direction side. In this manner, the ring-shaped member W3 is gripped by the gripping unit 214a. The gripping unit 214a is attached to the Z-direction movement mechanism 214b.

[0090] The Z-direction movement mechanism 214b is configured to move the clamp unit 214 in the Z direction. Specifically, the Z-direction movement mechanism 214b is configured to move the gripper 214a in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 214b has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction movement mechanism 214b is attached to the Y-direction movement mechanism 214c. The Y-direction movement mechanism 214c is configured to move the Z-direction movement mechanism 214b in the Y1 direction or the Y2 direction. The Y-direction movement mechanism 214c has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

[0091] (Control configuration of semiconductor wafer processing equipment) 9, semiconductor wafer processing apparatus 100 includes a first control unit 101, a second control unit 102, a third control unit 103, a fourth control unit 104, a fifth control unit 105, a sixth control unit 106, a seventh control unit 107, an eighth control unit 108, an expanding control calculation unit 109, a handling control calculation unit 110, a dicing control calculation unit 111, and a memory unit 112. Note that dicing control calculation unit 111 is an example of the "control unit" in the claims.

[0092] The first control unit 101 is configured to control the squeegee unit 213. The first control unit 101 includes a central processing unit (CPU) and a storage unit having a read-only memory (ROM) and a random access memory (RAM). The first control unit 101 may include a hard disk drive (HDD) as the storage unit, in which stored information is retained even after the voltage is cut off. The HDD may be shared by the first control unit 101, the second control unit 102, the third control unit 103, the fourth control unit 104, the fifth control unit 105, the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108.

[0093] The second control unit 102 is configured to control the cool air supply unit 206 and the cooling unit 207. The second control unit 102 includes a CPU and a storage unit having a ROM, RAM, etc. The third control unit 103 is configured to control the heat shrink unit 211 and the ultraviolet ray irradiation unit 212. The third control unit 103 includes a CPU and a storage unit having a ROM, RAM, etc. Note that the second control unit 102 and the third control unit 103 may include a storage unit such as an HDD that retains stored information even after the voltage is cut off.

[0094] The fourth control unit 104 is configured to control the cassette unit 202 and the lift-up hand unit 203. The fourth control unit 104 includes a CPU and a storage unit having a ROM, RAM, etc. The fifth control unit 105 is configured to control the suction hand unit 204. The fifth control unit 105 includes a CPU and a storage unit having a ROM, RAM, etc. Note that the fourth control unit 104 and the fifth control unit 105 may include a storage unit such as an HDD that retains stored information even after the voltage is cut off.

[0095] The sixth control unit 106 is configured to control the chuck table unit 12. The sixth control unit 106 includes a CPU and a storage unit having a ROM, RAM, etc. The seventh control unit 107 is configured to control the laser unit 13. The seventh control unit 107 includes a CPU and a storage unit having a ROM, RAM, etc. The eighth control unit 108 is configured to control the imaging unit 14. The eighth control unit 108 includes a CPU and a storage unit having a ROM, RAM, etc. Note that the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108 may each include a storage unit such as an HDD that retains stored information even after the voltage is cut off.

[0096] The expansion control calculation unit 109 is configured to perform calculations related to the expansion process of the sheet member W2 based on the processing results of the first control unit 101, the second control unit 102, and the third control unit 103. The expansion control calculation unit 109 includes a CPU and a storage unit having a ROM, a RAM, etc.

[0097] The handling control calculation unit 110 is configured to perform calculations related to the movement process of the wafer ring structure W based on the processing results of the fourth control unit 104 and the fifth control unit 105. The handling control calculation unit 110 includes a CPU and a storage unit having a ROM, a RAM, etc.

[0098] The dicing control calculation unit 111 is configured to perform calculations related to the dicing process of the wafer W1 based on the processing results of the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108. The dicing control calculation unit 111 includes a CPU and a storage unit having a ROM, a RAM, etc. The detailed configuration of the dicing control calculation unit 111 will be described in detail later.

[0099] The storage unit 112 stores programs for operating the dicing device 1 and the expanding device 2. The storage unit 112 includes a ROM, a RAM, an HDD, and the like.

[0100] (Semiconductor chip manufacturing process) The overall operation of the semiconductor wafer processing apparatus 100 will be described below with reference to FIGS.

[0101] In step S1, the wafer ring structure W is removed from the cassette unit 202. That is, after the wafer ring structure W accommodated in the cassette unit 202 is supported by the lift-up hand 203b, the lift-up hand 203b is moved in the Y1 direction by the Y-direction movement mechanism 203a, thereby removing the wafer ring structure W from the cassette unit 202. In step S2, the wafer ring structure W is transferred to the chuck table unit 12 of the dicing apparatus 1 by the suction hand 204c. That is, the wafer ring structure W removed from the cassette unit 202 is moved in the X2 direction by the X-direction movement mechanism 204a while being sucked by the suction hand 204c. Then, the wafer ring structure W moved in the X2 direction is transferred from the suction hand 204c to the chuck table unit 12, and then gripped by the chuck table unit 12.

[0102] In step S3, a modified layer Wm is formed on the wafer W1 by the laser unit 13. In step S4, the wafer ring structure W having the wafer W1 on which the modified layer Wm is formed is transferred to the clamp unit 214 by the suction hand 204c. In step S5, the sheet member W2 is cooled by the cold air supply unit 206 and the cooling unit 207. That is, the wafer ring structure W held by the clamp unit 214 is moved (lowered) in the Z2 direction by the Z-direction movement mechanism 214b so as to contact the cooling unit 207, and cold air is supplied from the Z1 direction by the cold air supply unit 206, thereby cooling the sheet member W2.

[0103] In step S6, the wafer ring structure W is moved to the expanding unit 208 by the clamping unit 214. That is, the wafer ring structure W with the cooled sheet member W2 is moved in the Y1 direction by the Y-direction moving mechanism 214c while being held by the clamping unit 214. In step S7, the sheet member W2 is expanded by the expanding unit 208. That is, the wafer ring structure W is moved in the Z2 direction by the Z-direction moving mechanism 214b while being held by the clamping unit 214. Then, the sheet member W2 comes into contact with the expanding ring 281 and is expanded by being pulled by the expanding ring 281. As a result, the wafer W1 is divided along the dividing line (modified layer Wm).

[0104] In step S8, the sheet member W2 in the expanded state is pressed from the Z1 direction side by the expansion maintaining member 210. That is, the pressing ring portion 210a is moved (lowered) in the Z2 direction by the Z direction moving mechanism 210d until it abuts against the sheet member W2. Then, the process proceeds from point A in FIG. 10 via point A in FIG. 11 to step S9.

[0105] 11, in step S9, after the sheet member W2 is pressed by the expansion maintaining member 210, the ultraviolet ray Ut is irradiated onto the sheet member W2 by the ultraviolet ray irradiating unit 212 while the wafer W1 is pressed by the squeegee unit 213. As a result, the wafer W1 is further divided by the squeegee unit 213. In addition, the adhesive strength of the sheet member W2 is reduced by the ultraviolet ray Ut irradiated from the ultraviolet ray irradiating unit 212.

[0106] In step S10, the sheet material W2 is heated and shrunk by the heat shrink unit 211, while the clamp unit 214 is raised. At this time, the intake unit 210c sucks in air near the heated sheet material W2. In step S11, the wafer ring structure W is transferred from the clamp unit 214 to the suction hand 204c. That is, the wafer ring structure W is moved in the Y2 direction by the Y-direction movement mechanism 214c while being held by the clamp unit 214. Then, at a position on the Z1 direction side of the cooling unit 207, the wafer ring structure W is released from the clamp unit 214 and then sucked by the suction hand 204c.

[0107] In step S12, the wafer ring structure W is transferred to the lift-up hand 203b by the suction hand 204c. In step S13, the wafer ring structure W is accommodated in the cassette unit 202. That is, the wafer ring structure W supported by the lift-up hand 203b is moved in the Y1 direction by the Y-direction movement mechanism 203a, and the wafer ring structure W is accommodated in the cassette unit 202. This completes the processing performed on one wafer ring structure W. Then, the process returns to step S1 from point B in FIG. 11 via point B in FIG. 10.

[0108] (Detailed configuration of the chuck table, laser, and imaging units) The detailed configurations of the chuck table unit 12, the laser unit 13, and the imaging unit 14 will be described below.

[0109] 12 and 13, in the dicing apparatus 1, a laser L is irradiated from the laser irradiation unit 13a along the streets Ws that separate the semiconductor chips (integrated circuits) Ch formed on the wafer W1, and modified layers Wm that serve as starting points for dividing the wafer W1 are formed inside the wafer W1 along the streets Ws. Here, in the wafer W1 on which the modified layers Wm are formed, cracks Wc are generated from the modified layers Wm in the Z1 and Z2 directions. When the cracks Wc reach the surface of the wafer W1 facing the Z1 direction, the wafer W1 becomes more likely to be divided by the modified layers Wm.

[0110] A plurality of streets Ws are set in advance for the wafer W1. That is, the streets Ws are set based on the size of the semiconductor chip Ch, the size of the modified layer Wm to be formed on the wafer W1 by the laser L, the distance from the modified layer Wm to the semiconductor chip Ch, etc. The streets Ws include X-direction streets Wx extending in the X direction and Y-direction streets Wy extending in the Y direction.

[0111] 13 and 14, the chuck table 12 is configured to move the wafer W1 in the Df direction while holding the wafer W1. Here, the Df direction is the processing direction in which the chuck table 12 moves the wafer W1 for processing to form a modified layer Wm on the wafer W1.

[0112] That is, in the dicing device 1, while the wafer ring structure W is held by the suction portion 12a and the clamp portion 12b, the laser L is irradiated from the laser irradiation portion 13a, and the X-direction moving mechanism 121 moves along the X1 direction or the X2 direction as the Df direction, thereby forming a modified layer Wm on the X-direction street Wx.

[0113] In the dicing device 1, the wafer ring structure W is held by the suction portion 12a and the clamp portion 12b, and then moved along the Y1 direction by the Y-direction moving mechanism 122 to the next X-direction street Wx adjacent to the Y1 direction side, and then a modified layer Wm is formed on the next X-direction street Wx by the method described above.

[0114] By repeating these steps, modified layers Wm are formed on a plurality of X-direction streets Wx aligned in the Y-direction. After the wafer W1 is rotated 90 degrees by the rotating mechanism 12c, the same process is repeated for the Y-direction streets Wy.

[0115] In this manner, the laser irradiation unit 13a is configured to form a modified layer Wm in the wafer W1 by irradiating the wafer W1 with the laser L in the direction Df extending along each of the plurality of streets Ws of the wafer W1. At this time, the wafer W1 is moved in the direction Df relative to the laser irradiation unit 13a by the chuck table unit 12, while the laser irradiation unit 13a is positioned in the horizontal direction.

[0116] 14 and 15, the high-resolution camera 14a is configured to be able to capture an image of the wafer W1 after the modified layer Wm has been formed. While the high-resolution camera 14a is fixed in position in the horizontal direction, it captures an image of the wafer W1 after the modified layer Wm has been formed on the wafer W1 by the laser L irradiated onto the wafer W1 from the laser irradiation unit 13a while moving the wafer W1 in the Df direction by the chuck table unit 12.

[0117] Both the high-resolution camera 14a and the laser irradiation unit 13a are attached to a common mounting member 13b. Here, the mounting member 13b is disposed in a state in which its position is fixed in the horizontal direction and the up-down direction. The high-resolution camera 14a and the laser irradiation unit 13a are attached to the mounting member 13b in a state in which their position is fixed in the horizontal direction. The high-resolution camera 14a and the laser irradiation unit 13a are attached to the mounting member 13b so as to be movable in the Z direction.

[0118] The high-resolution camera 14a is attached to the attachment member 13b together with the laser irradiator 13a in a state in which the focal position Fp of the laser L of the laser irradiator 13a and the optical center Po of the high-resolution camera 14a are aligned along the Df direction in a plan view. The high-resolution camera 14a is arranged on the X1 direction side of the laser irradiator 13a in a plan view.

[0119] As described above, the high-resolution camera 14a has a higher resolution than the wide-angle camera 14b. The wide-angle camera 14b is attached to the attachment member 13b together with the high-resolution camera 14a and the laser irradiation unit 13a. The wide-angle camera 14b has a function of capturing an image of the alignment mark on the wafer W1.

[0120] (Detailed configuration of the dicing control calculation unit) As shown in FIGS. 16 and 17, the dicing control calculation unit 111 of the first embodiment is configured to inspect whether the modified layer Wm has been properly formed based on cracks Wc on the surface in the Z1 direction side caused by the modified layer Wm. The inspection includes a first inspection and a second inspection. The first inspection is an inspection performed while the modified layer Wm is being formed on the wafer W1. The second inspection is an inspection performed after the modified layer Wm has been formed on the wafer W1. The first inspection and the second inspection are performed based on images captured by the high-resolution camera 14a.

[0121] (First inspection) The dicing control calculation unit 111 is configured to control the high-resolution camera 14a to continuously expose a predetermined portion of the predetermined street Ws1 to light while forming a modified layer Wm on the wafer W1 with the laser L along the Df direction on a predetermined street Ws1 among the multiple streets Ws, thereby creating a panning image Gf. The panning image Gf is an image captured by the high-resolution camera 14a used in the first inspection. The panning image Gf is an image acquired by continuously exposing the high-resolution camera 14a while capturing an image of the predetermined portion of the predetermined street Ws1.

[0122] Here, the predetermined portion may be, for example, the entirety of the specified street Ws1, or a portion of the specified street Ws1 (such as the end on the X1 direction side, the end on the X2 direction side, or the middle portion in the X direction).

[0123] 16, a case will be described in which the starting position of processing to form a modified layer Wm on the wafer W1 is the end of the X1 direction side of the predetermined street Ws1 located furthest in the Y1 direction. Also, it is assumed that the current point where processing to form a modified layer Wm on the wafer W1 is being performed is the predetermined street Ws2 located two streets further in the Y2 direction than the predetermined street Ws1.

[0124] Specifically, as shown in FIGS. 17 and 18 , the dicing control calculation unit 111 is configured to control a first inspection to check whether the processing of the modified layer Wm by the laser L is defective based on multiple average brightness values ​​Ba obtained for each pixel group Bg by averaging the brightness values ​​(pixel values) of multiple pixels B included in multiple pixel groups Bg in the panning image Gf. The pixel group Bg includes multiple pixels B of the panning image Gf arranged in the Df direction. Multiple pixel groups Bg are arranged in the Dv direction, which is the horizontal direction perpendicular to the Df direction. Here, the multiple average brightness values ​​Ba are brightness values ​​obtained corresponding to the positions of the multiple pixel groups Bg in the Dv direction in the panning image Gf. In the right diagram of FIG. 18 , the multiple average brightness values ​​Ba are indicated by hatching multiple rectangles arranged in the Dv direction to make them easier to understand visually.

[0125] As shown in Figures 18 and 19, the dicing control calculation unit 111 is configured to perform control to obtain the Dv-direction position range Ra of multiple crack brightness values ​​Bra and multiple pixel groups Bg having multiple crack brightness values ​​Bra that are greater than or equal to the threshold value Th, based on the average brightness value Ba of the position range Rs of a specific street Ws1 among multiple average brightness values ​​Ba arranged in the Dv direction and a predetermined threshold value Th.

[0126] 19 shows the positions in the Dv direction (Y direction) of the panning image Gf of the pixel groups Bg corresponding to each of the multiple average brightness values ​​Ba, and the magnitude of the corresponding average brightness value Ba for each position in the Dv direction. Note that the vertical axis of the graph in FIG. 19 approaches white as the average brightness value Ba approaches its lower limit, and approaches black as the average brightness value Ba approaches its upper limit.

[0127] Furthermore, the position range Rs corresponding to the position of the predetermined street Ws1 is set in advance by the user based on the width in the Dv direction of each of the multiple streets Ws, etc. The threshold value Th is set for each panning image Gf.

[0128] That is, the threshold value Th is set by adding a preset value set by the user to a reference value Gr (ground level) acquired for each panning image Gf. The reference value Gr is set as the average value of all of the lower-limit average brightness values ​​Ba in the panning image Gf, the average value of a portion (such as 1 / 3 or 2 / 3) of the lower-limit average brightness values ​​Ba, or the minimum value of the lower-limit average brightness values ​​Ba.

[0129] In the first inspection, the positional deviation, brightness, width, and number of cracks Wc are inspected.

[0130] Specifically, as shown in FIG. 19, the dicing control calculation unit 111 is configured to perform control to acquire the amount of positional deviation of the cracks Wc formed by the modified layer Wm based on the difference between the center position Pc of the positional range Ra of the multiple crack brightness values ​​Bra and a preset reference position, and then perform control to perform the first inspection. Here, the reference position is the center position in the Dv direction of the predetermined street Ws1. In this way, in the first inspection, the positional deviation in the Dv direction (Y direction) of the focal position Fp of the laser L of the laser irradiation unit 13a on the wafer W1 is inspected. Note that the center position Pc is an example of "a position within the positional range of multiple crack brightness values" in the claims.

[0131] The dicing control calculation unit 111 is also configured to control the execution of a first inspection, which inspects whether the size of the cracks Wc formed by the modified layer Wm is appropriate based on a comparison between the average value of the multiple crack brightness values ​​Bra and a preset reference average brightness value range. In this way, in the first inspection, it is determined whether the cracks Wc are sufficiently formed based on brightness based on the average value of the multiple crack brightness values ​​Bra. If the cracks Wc are not sufficiently formed, it is determined that the modified layer Wm is not properly formed.

[0132] The dicing control calculation unit 111 is also configured to control the execution of a first inspection to check whether the size of the cracks Wc formed by the modified layer Wm is appropriate based on a comparison between the width Wd of the position range Ra of the multiple crack brightness values ​​Bra and a preset reference width range. In this way, in the first inspection, it is determined whether the cracks Wc are inclined or curved based on the width Wd. If the cracks Wc are inclined or curved, it is determined that the modified layer Wm is not properly formed.

[0133] The dicing control calculation unit 111 is also configured to control the execution of a first inspection to check whether multiple widths Wd have been acquired as position ranges Ra of multiple crack brightness values ​​Bra. In this way, in the first inspection, it is determined whether multiple cracks Wc have been formed based on the widths Wd. If multiple cracks Wc have been formed, it is determined that an unexpected defect has occurred.

[0134] The dicing control calculation unit 111 is configured to perform control to notify an operator when the inspection result of the first inspection based on the plurality of crack brightness values ​​Bra is bad.

[0135] <Positional Misalignment> 20, the dicing control calculation unit 111 is configured to perform control to notify the operator when, in the first inspection, the amount of misalignment is outside the allowable range R1, or when the number of times the amount of misalignment is outside the non-addition range R21 within the allowable range R1 and is within the allowable range R1 exceeds a first predetermined number. Here, the range in which the amount of misalignment is outside the non-addition range R21 within the allowable range R1 and is within the allowable range R1 includes the warning range R31 and the warning range R32.

[0136] If the amount of misalignment is outside the allowable range R1, the wafer ring structure W including the semiconductor chip Ch at the location where the misalignment was identified cannot be supplied to the next process (such as bonding), so the wafer W1 is discarded, reprocessed, or re-inspected by the operator using a microscope or the like.

[0137] If the number of times the misalignment amount falls within warning range R31 or warning range R32 is less than a first predetermined number of times, the dicing device 1 automatically corrects the misalignment. If the number of times the misalignment amount falls within warning range R31 or warning range R32 exceeds a first predetermined number of times, an instruction to manually correct the misalignment is issued by the operator. If the misalignment amount is within warning range R31 or warning range R32, the inspection results of the first inspection are good until the number of times exceeds the first predetermined number.

[0138] Here, as shown in Figure 21, the dicing control calculation unit 111 is configured to perform control to correct the shift in the focal position Fp of the laser L in the Dv direction based on the positional deviation amount before processing the modified layer Wm with the laser L on a street Ws after the next street Ws of the specified street Ws1 where multiple average brightness values ​​Ba have been obtained.

[0139] Specifically, the dicing control calculation unit 111 is configured to control the correction of the shift in the focal position Fp of the laser L in the Dv direction based on the positional deviation amount before processing the modified layer Wm with the laser L on the next-next specified street Ws2 after the specified street Ws1 where multiple average brightness values ​​Ba have been obtained.

[0140] That is, the dicing control calculation unit 111 is configured to perform control to capture a panning image Gf of the crack Wc at a predetermined street Ws1. At the street Ws next to the predetermined street Ws1, the dicing control calculation unit 111 is configured to perform control to perform a first inspection on the panning image Gf captured at the predetermined street Ws1. If the amount of misalignment during the first inspection at the next street Ws falls within warning range R31 or warning range R32, the dicing control calculation unit 111 is configured to perform control to adjust the movement amount in the Y direction of the chuck table unit 12 by an amount that corrects the amount of misalignment when moving from the next street Ws to the next-next predetermined street Ws2 via path R.

[0141] Brightness 22, the dicing control calculation unit 111 is configured to control to notify the operator when, in the first inspection, the average value of the multiple crack luminance values ​​Bra is outside the allowable range R2, or when the number of times the average value of the multiple crack luminance values ​​Bra is outside the non-additive range R41 within the allowable range R2 and falls within the allowable range R2 exceeds a second predetermined number. Here, the range in which the misalignment amount is outside the non-additive range R41 within the allowable range R2 and within the allowable range R2 includes the warning range R51 and the warning range R52. Each of the allowable range R2, the non-additive range R41, the warning range R51, and the warning range R52 is a reference average luminance value range.

[0142] If the average value of the multiple crack brightness values ​​Bra is outside the allowable range R2, the wafer ring structure W including the semiconductor chip Ch at the location where the average value of the multiple crack brightness values ​​Bra is identified as defective cannot be supplied to the next process (such as bonding), so the wafer W1 is discarded, the wafer W1 is reprocessed, or the operator re-inspects it using a microscope or the like.

[0143] If the number of times that the average value of the multiple crack luminance values ​​Bra falls within the warning range R51 or R52 is less than a second predetermined number of times, the laser irradiation unit 13a is automatically corrected in the dicing device 1. If the number of times that the average value of the multiple crack luminance values ​​Bra falls within the warning range R51 or R52 exceeds the second predetermined number of times, an instruction for the operator to manually correct the laser irradiation unit 13a is notified. Note that if the average value of the multiple crack luminance values ​​Bra is within the warning range R51 or R52, the inspection results of the first inspection are good until the number of times exceeds the second predetermined number of times.

[0144] <width> 23, the dicing control calculation unit 111 is configured to control to notify the operator when, in the first inspection, the width Wd of the position range Ra of the plurality of crack luminance values ​​Bra is outside the allowable range R3, or when the number of times the width Wd of the position range Ra of the plurality of crack luminance values ​​Bra is outside the non-additive range R61 within the allowable range R3 and within the allowable range R3 exceeds a third predetermined number. Here, the range in which the width Wd is outside the non-additive range R61 within the allowable range R3 and within the allowable range R3 includes the warning range R71 and the warning range R72. The allowable range R3, the non-additive range R61, the warning range R71, and the warning range R72 are each a reference width range.

[0145] If the width Wd as the position range Ra of the multiple crack brightness values ​​Bra is outside the allowable range R3, the wafer ring structure W including the semiconductor chip Ch at the location where the defect in the width Wd as the position range Ra of the multiple crack brightness values ​​Bra is identified cannot be supplied to the next process (such as bonding), so the wafer W1 is discarded, the wafer W1 is reprocessed, or the operator re-inspects it using a microscope or the like.

[0146] If the number of times that the width Wd as the position range Ra of the multiple crack luminance values ​​Bra falls within the warning range R71 or R72 is less than a third predetermined number of times, the laser irradiation unit 13a is automatically corrected in the dicing device 1. If the number of times that the width Wd as the position range Ra of the multiple crack luminance values ​​Bra falls within the warning range R71 or R72 exceeds a third predetermined number of times, an instruction for the operator to manually correct the laser irradiation unit 13a is notified. Note that if the width Wd as the position range Ra of the multiple crack luminance values ​​Bra falls within the warning range R71 or R72, the inspection results of the first inspection are good until the number of times exceeds the third predetermined number of times.

[0147] <Number of cracks> 24, the dicing control calculation unit 111 is configured to perform control to notify the operator that an unexpected defect has occurred if multiple widths Wd are obtained as position ranges Ra of multiple crack brightness values ​​Bra in the first inspection. For example, the dicing control calculation unit 111 is configured to perform control to notify the operator that an unexpected defect has occurred if two widths Wd1 and Wd2 are obtained in the first inspection.

[0148] The illumination intensity of the high-resolution camera 14a when performing the first inspection described above is set automatically. That is, the dicing control calculation unit 111 is configured to perform control to acquire the illumination intensity when performing the first inspection based on the exposure time when performing the first inspection and the exposure time and illumination intensity when performing the second inspection.

[0149] The exposure time during the first inspection is a time preset for the high-resolution camera 14a to capture an image of a predetermined portion of the predetermined street Ws1 with the high-resolution camera 14a while forming a modified layer Wm on the wafer W1 by irradiating the laser L along the Df direction. The exposure time and illumination intensity during the second inspection are each a time preset for the high-resolution camera 14a to inspect cracks Wc formed by the modified layer Wm after forming the modified layer Wm on all of the multiple streets Ws. The illumination intensity during the first inspection is the brightness of illumination used to capture an image of a predetermined portion of the predetermined street Ws1 with the high-resolution camera 14a while forming a modified layer Wm on the wafer W1 with the laser L along the Df direction.

[0150] (Second inspection) 25, the second inspection performed by the dicing control calculation unit 111 requires more time than the first inspection due to the need to inspect the cracks Wc in more detail, so the inspection time is shortened. Here, the shortening of the inspection time is achieved by reducing the number of inspection objects to be inspected in the second inspection as much as possible.

[0151] The dicing control calculation unit 111 is configured to set up a second inspection to re-inspect whether the cracks Wc formed by the modified layer Wm are defective after forming the modified layer Wm on all of the multiple streets Ws of the wafer W1, based on the inspection result of the first inspection on the multiple streets Ws that the processing of the modified layer Wm is defective.

[0152] Specifically, the dicing control calculation unit 111 is configured to perform control to set a second inspection for a street Ws that has been identified as defective in the inspection result of the first inspection among the multiple streets Ws. In other words, the dicing control calculation unit 111 is configured to perform control to perform a second inspection for multiple inspection points Tp set on the streets Ws that have been identified as defective.

[0153] <Details of the second test> The details of the second test are described below.

[0154] 26, the second inspection is performed on the shape of cracks Wc near intersections Cr between cracks Wc on a wafer W1 on which modified layers Wm have been formed on all of the multiple streets Ws on the wafer W1. The second inspection is performed on streets Ws that were identified as defective in the first inspection among the multiple intersections Cr between cracks Wc on the wafer W1. In this way, the second inspection is performed on some, but not all, of the multiple intersections Cr.

[0155] As shown in FIGS. 27 and 28, the dicing control calculation unit 111 is configured to perform control to add numbers to parallel cutting lines Lc included in the cutting channel Cc. Here, the cutting channel Cc indicates the state of the wafer W1 when processing is performed to form modified layers Wm along the Df direction on the X-directional streets Wx of the wafer W1. That is, the state of the wafer W1 when processing is performed to form modified layers Wm along the Df direction on the X-directional streets Wx of the wafer W1 is a state where the cutting channel Cc is 0. Furthermore, after the wafer W1 is rotated 90 degrees by the rotation mechanism 12c, the state of the wafer W1 when processing is performed to form modified layers Wm along the Df direction on the Y-directional streets Wy of the wafer W1 is a state where the cutting channel Cc is 90. The cutting lines Lc indicate cracks Wc formed on multiple streets Ws.

[0156] For example, a plurality of cutting lines Lc are registered in the cutting channel Cc. For each of the plurality of cutting lines Lc, the cutting channel Cc stores information such as whether or not to perform processing to form a modified layer Wm, the Df direction when forming the modified layer Wm, whether or not to perform alignment Ci before performing processing to form the modified layer Wm, and information about the camera Ca to be used when performing processing to form the modified layer Wm.

[0157] As shown in FIG. 29, the total number Tn of intersections Cr on each of the plurality of cutting lines Lc is registered in the cutting channel Cc.

[0158] 30, the dicing control calculation unit 111 is configured to perform control to acquire, based on the mask area Ma1, intersection points Cr that are located inside the outer periphery in the radial direction of the wafer W1, among the multiple intersection points Cr between cracks Wc on the wafer W1. The acquired inner intersection points Cr are between the upper and lower limit values ​​set on the intersection number axis extending in the X direction, and between the upper and lower limit values ​​set on the line number axis extending in the Y direction. Note that the acquired inner intersection points Cr may be intersection points Cr that are inside the radius of the wafer W1.

[0159] 31, the dicing control calculation unit 111 is configured to control the execution of a second inspection of the crack Wc based on the acquired intersection image Gc including and near the intersection Cr. Here, the dicing control calculation unit 111 is configured to control the acquisition of a designated portion of the intersection image Gc between the designated area As1 and the designated area As2 based on the predetermined designated area As1 and the designated area As2. After acquiring the designated portion, the dicing control calculation unit 111 is configured to control the acquisition of a portion of the intersection image Gc within the discrimination frame Ae based on the discrimination frame Ae for identifying whether the crack Wc is defective.

[0160] As shown in FIG. 32, the dicing control calculation unit 111 is configured to perform control to acquire the center point of the crack Wc portion within the discrimination frame Ae of the intersection image Gc and the X-direction and Y-direction sizes of the crack Wc portion within the discrimination frame Ae of the intersection image Gc based on the crack Wc portion within the discrimination frame Ae of the intersection image Gc. The dicing control calculation unit 111 is configured to perform control to align the center point of the crack Wc portion within the discrimination frame Ae with the center point of the discrimination figure Fi1 and to superimpose the discrimination figure Fi1 on the crack Wc portion within the discrimination frame Ae of the intersection image Gc. The dicing control calculation unit 111 is configured to perform control to identify the portion overlaid with the discrimination figure Fi1 as part of the crack Wc when the brightness values ​​of each of the multiple pixels B included in the portion overlaid with the discrimination figure Fi1 are equal to or greater than a threshold value Th. Here, in FIG. 32, the discrimination frame Ae is superimposed on a portion of the crack Wc on the left side of the intersection image Gc.

[0161] As shown in FIG. 33, when the identification figure Fi1 can be superimposed on the crack Wc portion within the identification frame Ae of the intersection image Gc, the dicing control calculation unit 111 is configured to perform control to superimpose the next identification figure Fi2 on the crack Wc portion within the identification frame Ae of the intersection image Gc. Here, the identification figures Fi1 and Fi2 partially overlap. Here, in the overlapping portion of the identification figures Fi1 and Fi2, the comparison process between the brightness value and the threshold value Th is not performed, and the processing result when the identification figure Fi1 was superimposed is maintained. This suppresses an increase in the processing load of the dicing control calculation unit 111. The above-mentioned process is repeated for all of the crack Wc portions within the identification frame Ae of the intersection image Gc.

[0162] As shown in Figure 34, the dicing control calculation unit 111 is configured to control the execution of a second inspection based on a portion Gp of a crack Wc in an intersection image Gc identified based on the superposition of multiple identification figures including identification figure Fi1 and identification figure Fi2.

[0163] The dicing control calculation unit 111 is configured to perform control to acquire the minimum X-coordinate X1 closest to the X1 direction and the maximum X-coordinate X2 closest to the X2 direction in the X direction of the portion Gp of the crack Wc in the intersection image Gc. The dicing control calculation unit 111 is configured to perform control to acquire the minimum Y-coordinate Y1 closest to the Y2 direction and the maximum Y-coordinate Y2 closest to the Y2 direction in the Y direction of the portion Gp of the crack Wc in the intersection image Gc.

[0164] The dicing control calculation unit 111 is configured to perform control to acquire a center point Xc in the X direction of a portion Gp of the crack Wc in the intersection image Gc based on the minimum X coordinate X1 and the maximum X coordinate X2. The dicing control calculation unit 111 is configured to perform control to acquire a length (range) Rx in the X direction of the portion Gp of the crack Wc in the intersection image Gc based on the minimum X coordinate X1 and the maximum X coordinate X2.

[0165] The dicing control calculation unit 111 is configured to perform control to acquire a center point Yc in the X direction of a portion Gp of the crack Wc in the intersection image Gc based on the minimum Y coordinate Y1 and the maximum Y coordinate Y2. The dicing control calculation unit 111 is configured to perform control to acquire a length (range) Ry in the Y direction of the portion Gp of the crack Wc in the intersection image Gc based on the minimum Y coordinate Y1 and the maximum Y coordinate Y2.

[0166] The dicing control calculation unit 111 is configured to perform control to identify whether the crack Wc at the intersection Cr is defective or not based on the center point Xc, the length Rx, the center point Yc, and the length Ry. Here, the crack Wc at the intersection Cr in FIG. 34 is identified as being good.

[0167] Furthermore, the crack Wc at the intersection Cr in Fig. 35 is identified as defective because its length Ry in the Y direction is short. The crack Wc at the intersection Cr in Fig. 36 is identified as defective because the identification figure Fi1 cannot be superimposed on the crack Wc portion within the identification frame Ae of the intersection image Gc.

[0168] The dicing control calculation unit 111 can perform control to store the intersection image Gc in the storage unit based on the inspection result that is defective. Note that the dicing control calculation unit 111 may store the intersection image Gc in the storage unit regardless of whether the inspection result is good or bad, or may not store the intersection image Gc in the storage unit.

[0169] 37, the dicing control calculation unit 111 can perform control to store the numerical information Sr in the storage unit based on the inspection result that is defective. Note that the dicing control calculation unit 111 may store the numerical information Sr in the storage unit regardless of whether the inspection result is good or bad, or may not store the numerical information Sr in the storage unit.

[0170] The numerical information Sr includes an identification number, a cutting channel Cc, a line number, an intersection number, a center point Xc, a center point Yc, a length Rx, a length Ry, and a defect type. The identification number is a number for identifying each of the multiple wafers W1 produced by the semiconductor wafer processing apparatus 100. The defect type is a type of defect corresponding to an inspection result preset by an operator.

[0171] Based on the inspection result of the second inspection being a defect, the dicing control calculation unit 111 is configured to perform control to stop the dicing device 1. Here, the timing to stop the dicing device 1 is a timing after all of the plurality of wafer ring structures W housed in the cassette unit 202 have been processed, for example.

[0172] (Setting change for the second test and test test for setting change) 38, an external control device 1000 is provided outside the semiconductor wafer processing apparatus 100. The configuration combining the semiconductor wafer processing apparatus 100 and the external control device 1000 constitutes a semiconductor wafer processing system 1100. Here, the external control device 1000 performs setting changes for the second inspection and a test inspection for setting changes.

[0173] The external control device 1000 includes a CPU, a storage unit having a ROM, a RAM, etc., and a display unit 1001 (see FIG. 39). The external control device 1000 may include, as the storage unit, an HDD or the like that retains stored information even after the voltage is cut off.

[0174] <Change settings> As shown in FIG. 39, the external control device 1000 is configured to perform control to display a first setting change screen Sc1 on the display unit 1001. The external control device 1000 is configured to perform control to acquire, on the first setting change screen Sc1, an operator's selection operation of the camera to be used in the second inspection from the high-resolution camera 14a and the wide-angle camera 14b. The external control device 1000 is configured to perform control to acquire, on the first setting change screen Sc1, an operator's change operation of the illumination intensity and exposure time of the camera to be used in the second inspection. The external control device 1000 is configured to perform control to acquire, on the first setting change screen Sc1, a selection operation by the operator as to whether or not to reduce the number of pixels of the intersection image Gc and perform high-speed imaging to be transmitted from the dicing apparatus 1 to the external control device 1000.

[0175] The external control device 1000 is configured to perform control to acquire an operator's operation for changing the setting of the center of the angle of view of the intersection image Gc on the first setting change screen Sc1. To change the setting of the center of the angle of view of the intersection image Gc, the operator specifies the cutting channel Cc and then inputs the X position adjustment amount and the Y position adjustment amount of the center of the angle of view of the intersection image Gc, thereby changing the setting.

[0176] As shown in Fig. 40, the external control device 1000 is configured to perform control to display a second setting change screen Sc2 on the display unit 1001. The external control device 1000 is configured to perform control to display, on the second setting change screen Sc2, an intersection Cr among multiple intersections Cr for which the operator has individually specified the content of the second inspection. The external control device 1000 is configured to perform control to accept a user's operation to change settings regarding whether or not to capture an image using the high-resolution camera 14a (wide-angle camera 14b) at an intersection Cr specified based on the number (coordinate) of the intersection number axis extending in the X direction and the number (coordinate) of the line number axis extending in the Y direction. The external control device 1000 is configured to perform control to accept an operator's operation to change settings regarding the number and position of identification frames Ae to be superimposed at the specified intersection Cr.

[0177] 41, the external control device 1000 is configured to perform control to display a third setting change screen Sc3 on the display unit 1001. The external control device 1000 is configured to perform control to acquire, on the third setting change screen Sc3, setting changes made by the operator regarding saving of the numerical information Sr and the intersection image Gc in the memory unit.

[0178] The external control device 1000 is configured to perform control to accept an operator's change in settings for stopping the dicing device 1, based on the total number of defects for each cutting channel Cc. The external control device 1000 is also configured to perform control to accept an operator's change in settings for the timing to stop the dicing device 1 (after processing the last cutting line Lc in the cutting channel Cc in FIG. 41), based on the total number of defects for each cutting channel Cc.

[0179] Based on the number of consecutive occurrences of defects, external control device 1000 is configured to perform control to accept a change in setting by an operator to stop dicing device 1. Furthermore, based on the number of consecutive occurrences of defects, external control device 1000 is configured to perform control to accept a change in setting by an operator as to the timing to stop dicing device 1 (immediately in FIG. 41).

[0180] <Test inspection for setting changes> 42, the external control device 1000 is configured to perform control to display a fourth setting change screen Sc4 on the display unit 1001. The external control device 1000 is configured to perform control to accept, on the fourth setting change screen Sc4, a request to perform a test examination for adjusting the second examination. The request to perform the test examination is accepted based on the operation of a test button Bu by the operator.

[0181] The external control device 1000 is configured to perform control in the "execution portion" to receive, by the operator, specification of intersections Cr among the plurality of intersections Cr at which a test inspection is to be performed for adjusting the second inspection. The external control device 1000 is configured to perform control in the "inspection type" to receive, by the operator, specification of the inspection type of the second inspection (such as a full inspection in which all intersections Cr are inspected, or a partial inspection in which a part of all intersections Cr are inspected).

[0182] The external control device 1000 is configured to control the "list display" so that it accepts an operator's designation of the inspection results of the test inspection corresponding to the discrimination frame Ae (the discrimination frame Ae on the left side of the intersection image Gc in FIG. 42). Based on the operator's designation of the inspection results of the test inspection corresponding to the discrimination frame Ae, the external control device 1000 is configured to control the display of a list of the inspection results of the test inspection corresponding to the discrimination frame Ae. The list displays the identification number, position (displayed by the intersection number and line number), misalignment, and dimensional error. Misalignment is displayed by the difference between the center point Xc and the reference position, and the difference between the center point Yc and the reference position. Dimensions are displayed by the difference between the length Rx and the reference length, and the difference between the length Ry and the reference length position. The list also displays the number of defects, the maximum and minimum misalignment values, and the maximum and minimum dimensional error values. As an example, hatched areas are used to indicate areas identified as defects in the list.

[0183] The external control device 1000 is configured to control the inspection by including the intersection image Gc and numerical information Sr of the wafer W1 displayed in the "wafer list" field in the current test inspection. The wafer W1 displayed in the "wafer list" field is information about the wafer W1 that has previously undergone the first and second inspections.

[0184] 43, the external control device 1000 is configured to perform control to cause the display unit 1001 to display a graph showing the number of cases in which the inspection result of the second inspection of wafer W1 is good and the number of cases in which the inspection result of the second inspection of wafer W1 is bad. The number of cases in which the inspection result of the second inspection of wafer W1 is good and the number of cases in which the inspection result of the second inspection of wafer W1 is bad are displayed in different colors (shown by different hatching in FIG. 43). In addition, the external control device 1000 is configured to perform control to change the threshold value Tr based on receiving an operation of the line of the threshold value Tr by the operator.

[0185] (Crack inspection process) Referring to FIG. 44, the crack inspection process of the semiconductor wafer processing apparatus 100 will be described below.

[0186] In step S1, the laser irradiation unit 13a irradiates the wafer W1 with a laser beam L while moving the wafer W1 along the street Ws in the direction Df. As a result, a modified layer Wm is formed on the wafer W1. In step S2, the high-resolution camera 14a captures an image of the crack Wc in the wafer W1. As a result, a panning image Gf of the street Ws is captured. In step S3, the wafer W1 is moved from the street Ws where the modified layer Wm was formed on the wafer W1 to the next street Ws. That is, the chuck table unit 12 moves the wafer W1 from the street Ws where the modified layer Wm was formed on the wafer W1 so that the position of the laser irradiation unit 13a is aligned with the next street Ws where processing to form the modified layer Wm on the wafer W1 will be performed.

[0187] In step S4, the laser L is irradiated from the laser irradiation unit 13a while the wafer W1 is moved along the Df direction at the next street Ws. In step S5, a first inspection is performed based on the panning image Gf while the wafer W1 is imaged by the high-resolution camera 14a. Here, the panning image Gf used for the first inspection is an image of the vicinity of the crack Wc captured at the previous street Ws. In step S6, it is determined whether processing of all streets Ws has been completed. If processing of all streets Ws has been completed, proceed to step S10. If processing of all streets Ws has not been completed, proceed to step S7.

[0188] In step S7, it is determined whether or not the inspection results of the first inspection require correction of positional deviation. If positional deviation correction is required, the process proceeds to step S8; if positional deviation correction is not required, the process proceeds to step S9. In step S8, the movement distance in the Y1 direction from the current street Ws to the next street Ws is corrected by the amount of positional deviation. After moving to the next street Ws in step S9, the process returns to step S4 and the same process is performed.

[0189] In step S10, the street Ws identified as defective in the first inspection is inspected in a second inspection. That is, the second inspection is performed based on the intersection image Gc of the intersection Cr on the street Ws identified as defective in the first inspection. After step S10, the crack inspection process ends.

[0190] Here, as a process other than the crack inspection process in the manufacturing method of semiconductor chips Ch (the above-described semiconductor chip manufacturing process), which is a manufacturing method for manufacturing semiconductor chips Ch, the semiconductor chip manufacturing process includes a step of forming a modified layer Wm in the wafer W1 by irradiating a laser L from a laser irradiation unit 13a in a direction Df extending along each of a plurality of streets Ws of the wafer W1 on which a plurality of semiconductor chips Ch are provided. The semiconductor chip manufacturing process also includes a step of imaging the wafer W1 after forming the modified layer Wm with a high-resolution camera 14a attached to the same mounting member 13b as the laser irradiation unit 13a. The semiconductor chip manufacturing process also includes a step of dividing the wafer W1 into a plurality of semiconductor chips Ch along dividing lines (streets Ws) along which an expander 208 expands a stretchable sheet member W2.

[0191] In this way, the semiconductor chips Ch manufactured by the semiconductor chip manufacturing process are manufactured by the dicing apparatus 1 including the laser irradiation unit 13a, the high-resolution camera 14a, and the common mounting member 13b.

[0192] (Effects of the first embodiment) In the first embodiment, the following effects can be obtained.

[0193] In the first embodiment, as described above, the dicing apparatus 1 includes a common mounting member 13b to which both the laser irradiation unit 13a and the high-resolution camera 14a are attached. By mounting the laser irradiation unit 13a and the high-resolution camera 14a on the common mounting member 13b, it is possible to suppress an increase in the number of parts used in the mounting structure of the laser irradiation unit 13a and the high-resolution camera 14a in the dicing apparatus 1, and therefore it is possible to suppress an increase in the number of parts and an increase in the complexity of the mounting structure of the laser irradiation unit 13a and the high-resolution camera 14a in the dicing apparatus 1.

[0194] In the first embodiment, as described above, the mounting member 13b is disposed in a state where its position is fixed in the horizontal and vertical directions. The laser irradiation unit 13a and the high-resolution camera 14a are attached to the mounting member 13b in a state where their positions are fixed in the horizontal direction. This makes it possible to suppress an increase in the number of parts and complexity in the movement mechanisms of the laser irradiation unit 13a and the high-resolution camera 14a, compared to when the laser irradiation unit 13a and the high-resolution camera 14a each have a movement mechanism for moving them in the horizontal direction.

[0195] Furthermore, in the first embodiment, as described above, the dicing apparatus 1 includes the chuck table 12 that moves the wafer W1 in the Df direction while holding the wafer W1. The high-resolution camera 14a, while fixed in position in the horizontal direction, moves the wafer W1 in the Df direction using the chuck table 12, and captures an image of the wafer W1 after a modified layer Wm has been formed on the wafer W1 by the laser L irradiated from the laser irradiation unit 13a. This allows the cracks Wc formed in the wafer W1 to be captured by moving the wafer W1 using the chuck table 12, eliminating the need for a movement mechanism for moving the high-resolution camera 14a in the horizontal direction.

[0196] Furthermore, in the first embodiment, as described above, the high-resolution camera 14a is attached to the mounting member 13b together with the laser irradiation unit 13a in a state in which the focal position Fp of the laser L of the laser irradiation unit 13a and the optical center Po of the high-resolution camera 14a are aligned along the Df direction in a plan view. As a result, during processing of the modified layer Wm, the portion of the wafer W1 processed by the laser L irradiated from the laser irradiation unit 13a moves directly below the high-resolution camera 14a as the wafer W1 moves in the Df direction. Therefore, processing of the modified layer Wm by the laser L irradiated from the laser irradiation unit 13a and imaging of the cracks Wc in the wafer W1 by the high-resolution camera 14a can be performed in parallel.

[0197] Furthermore, in the first embodiment, as described above, the dicing apparatus 1 is equipped with a wide-angle camera 14b that is attached to the attachment member 13b together with the high-resolution camera 14a and the laser irradiation unit 13a and captures images of the alignment marks on the wafer W1. The high-resolution camera 14a has a higher resolution than the wide-angle camera 14b. This allows the high-resolution camera 14a to capture images of the cracks Wc generated in the wafer W1 in greater detail, thereby enabling accurate inspection of the cracks Wc.

[0198] Furthermore, in the first embodiment, as described above, the dicing apparatus 1 includes a dicing control calculation unit 111 that controls the laser L to form a modified layer Wm on the wafer W1 along the Df direction on a predetermined street Ws1 among the multiple streets Ws, while continuously exposing the high-resolution camera 14a to a predetermined portion of the predetermined street Ws1 to create a panning image Gf. This makes it possible to obtain a panning image Gf displayed using a luminance value obtained by accumulating the luminance values ​​of the predetermined portion of the predetermined street Ws1, making it possible to inspect the wafer W1 for cracks Wc caused by the modified layer Wm based on a relatively small number of images.

[0199] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to control acquisition of illumination intensity for imaging a predetermined portion of the predetermined street Ws1 with the high-resolution camera 14a while forming a modified layer Wm on the wafer W1 by irradiating the laser L along the Df direction, based on a predetermined exposure time for the high-resolution camera 14a to image a predetermined portion of the predetermined street Ws1 with the high-resolution camera 14a, and a predetermined exposure time and illumination intensity for the high-resolution camera 14a to inspect cracks Wc formed by the modified layer Wm after forming the modified layer Wm on all of the multiple streets Ws. This allows the illumination intensity when imaging the predetermined street Ws1 on the wafer W1 with the laser L to be appropriately adjusted, thereby preventing the panning image Gf captured by the high-resolution camera 14a from becoming too dark or too bright.

[0200] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to control the execution of a first inspection to check whether the processing of the modified layer Wm by the laser L is defective, based on a plurality of average luminance values ​​Ba obtained for each pixel group Bg by averaging the luminance values ​​of each of the plurality of pixels B included in the plurality of pixel groups Bg of a panning image Gf in which a plurality of pixel groups Bg, each including a plurality of pixels B arranged in the Df direction, are arranged in the Dv direction. This allows the luminance values ​​of each of the plurality of pixels B included in the pixel group Bg to be combined into the average luminance value Ba for the first inspection process, thereby preventing the processing of the dicing control calculation unit 111 when performing the first inspection from becoming complicated.

[0201] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to perform control to acquire multiple crack luminance values ​​Bra equal to or greater than the threshold value Th and the position range of multiple pixel groups Bg having the multiple crack luminance values ​​Bra, in a direction perpendicular to the Df direction, based on the average luminance value Ba of the position range of the predetermined street Ws1 among the multiple average luminance values ​​Ba and the preset threshold value Th. As a result, by acquiring multiple crack luminance values ​​Bra corresponding to the crack Wc portion formed by the modified layer Wm from the multiple average luminance values ​​Ba of the position range of the predetermined street Ws1, it is possible to exclude the average luminance values ​​Ba that are not necessary for the first inspection from the inspection, thereby ensuring the inspection accuracy of the first inspection.

[0202] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to perform control to acquire the amount of positional deviation of the crack Wc formed by the modified layer Wm and perform the first inspection based on the difference between the center position Pc of the positional range of the multiple crack brightness values ​​Bra and a preset reference position. By acquiring the amount of positional deviation of the crack Wc, ​​it is possible to correct the relative horizontal positional deviation between the laser irradiation unit 13a and the wafer W1 so as to reduce the amount of positional deviation of the crack Wc before performing processing to form the modified layer Wm on the street Ws where the modified layer Wm is not formed, and therefore it is possible to form the modified layer Wm at an appropriate position on the wafer W1.

[0203] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to perform control to correct the positional deviation of the focal position Fp of the laser L in the DV direction based on the positional deviation amount before processing the modified layer Wm with the laser L on a street Ws after the street Ws next to the predetermined street Ws1 for which the multiple average luminance values ​​Ba were obtained. This makes it possible to ensure at least the time required for processing the modified layer Wm of the wafer W1 with the laser L on the next street Ws as the processing time for performing the process to obtain the positional deviation amount, and therefore ensures sufficient processing time for the dicing control calculation unit 111 to perform the process to obtain the positional deviation amount.

[0204] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to control the execution of a first inspection to inspect whether the cracks Wc formed by the modified layer Wm are appropriate as a first inspection based on a comparison between the average value of the plurality of crack luminance values ​​Bra and a preset reference average luminance value range, and a comparison between the width Wd of the position range Ra in the Dv direction in which the plurality of pixel groups Bg corresponding to the plurality of crack luminance values ​​Bra are arranged and a preset reference width range. As a result, by comparing the average value of the plurality of crack luminance values ​​Bra with the preset reference average luminance value range in the first inspection, it is possible to determine whether the luminance value of the portion corresponding to the crack Wc is sufficiently large, and therefore it is possible to identify a decrease in luminance value caused by the crack Wc being interrupted midway. In addition, by comparing the width Wd of the position range Ra of multiple crack brightness values ​​Bra with a predetermined standard width range, it is possible to identify an increase in the width Wd of the crack brightness value Bra, which is the part corresponding to the crack Wc in the panning image Gf, caused by the wafer W1 or the laser irradiation section 13a moving in a direction inclined relative to the Df direction extending along the street Ws when forming a modified layer Wm on the wafer W1.

[0205] Furthermore, in the first embodiment, as described above, the dicing control calculation unit 111 is configured to perform control to notify the operator when the inspection result of the first inspection based on the plurality of crack luminance values ​​Bra is found to be defective, thereby enabling the operator to reliably recognize the defect.

[0206] Furthermore, in the first embodiment, as described above, based on the inspection result of the first inspection on the plurality of streets Ws that indicates that the processing of the modified layer Wm is defective, a setting is configured to perform a second inspection in which the modified layer Wm is formed on all of the plurality of streets Ws of the wafer W1 and then the cracks Wc formed by the modified layer Wm are re-inspected to determine whether they are defective. This allows the number of inspection targets in the second inspection to be reduced compared to when the cracks Wc formed on all of the plurality of streets Ws of the wafer W1 are inspected in the second inspection, thereby suppressing an increase in the processing load on the dicing control calculation unit 111 for the second inspection.

[0207] Furthermore, in the first embodiment, as described above, the method for manufacturing semiconductor chips Ch includes a step of capturing an image of the wafer W1 after the modified layer Wm is formed using the high-resolution camera 14a attached to the mounting member 13b common to the laser irradiation unit 13a. As a result, since the laser irradiation unit 13a and the high-resolution camera 14a are attached to the common mounting member 13b, a method for manufacturing semiconductor chips Ch can be obtained that can suppress an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit 13a and the high-resolution camera 14a in the dicing apparatus 1.

[0208] Furthermore, in the first embodiment, as described above, the semiconductor chip Ch is manufactured by the dicing apparatus 1 including the common mounting member 13b to which both the laser irradiation unit 13a and the high-resolution camera 14a are attached. As a result, since the laser irradiation unit 13a and the high-resolution camera 14a are attached to the common mounting member 13b, it is possible to obtain the semiconductor chip Ch that can suppress an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit 13a and the high-resolution camera 14a in the dicing apparatus 1.

[0209] Furthermore, in the first embodiment, as described above, the dicing apparatus 1 includes a chuck table 12 that moves the wafer W1 in the direction Df while holding the wafer W1. The mounting member 13b is arranged in a fixed position in the horizontal and vertical directions. The dicing control calculation unit 111 is configured to control the high-resolution camera 14a, whose position is fixed by the mounting member 13b, to move the wafer W1 held on the chuck table 12 in the direction Df relative to the high-resolution camera 14a, which forms a modified layer Wm on the wafer W1 along the predetermined street Ws1 with the laser L, while continuously exposing the high-resolution camera 14a along the predetermined street Ws1 to capture a panning image Gf. By capturing the crack Wc with the high-resolution camera 14a in a fixed position, the focal position Fp of the high-resolution camera 14a can be kept constant, allowing a panning image Gf in which the crack Wc is clearly displayed to be obtained.

[0210] [Second embodiment] 45 to 50, the configuration of a semiconductor wafer processing apparatus 300 according to the second embodiment will be described. Unlike the first embodiment, the second embodiment has a squeegee unit 3213 disposed outside an expand ring 3281. Note that in the second embodiment, detailed description of the same configuration as in the first embodiment will be omitted.

[0211] (Semiconductor wafer processing equipment) As shown in FIGS. 45 and 46, the semiconductor wafer processing apparatus 300 is an apparatus for processing a wafer W1 provided on a wafer ring structure W.

[0212] The semiconductor wafer processing apparatus 300 is equipped with a dicing apparatus 1 and an expanding apparatus 302. The vertical direction is the Z direction, the upward direction is the Z1 direction, and the downward direction is the Z2 direction. The horizontal direction perpendicular to the Z direction in which the dicing apparatus 1 and the expanding apparatus 302 are lined up is the X direction, the X1 direction is the expanding apparatus 302 side of the X direction, and the X2 direction is the dicing apparatus 1 side of the X direction. The horizontal direction perpendicular to the X direction is the Y direction, one side of the Y direction is the Y1 direction, and the other side of the Y direction is the Y2 direction.

[0213] (dicing equipment) The dicing device 1 is configured to form a modified layer Wm by irradiating the wafer W1 with a laser beam L having a wavelength that is transparent to the wafer W1 along the dividing lines (streets Ws).

[0214] Specifically, the dicing device 1 includes a base 11, a chuck table unit 12, a laser unit 13, and an imaging unit .

[0215] (Expanding device) As shown in FIGS. 46 and 47, the expanding apparatus 302 is configured to divide the wafer W1 into a plurality of semiconductor chips Ch.

[0216] The expansion device 302 includes a base 201, a cassette section 202, a lift-up hand section 203, a suction hand section 204, a base 205, a cold air supply section 206, a cooling unit 207, an expansion section 3208, a base 209, an expansion maintenance member 210, a heat shrink section 211, an ultraviolet irradiation section 212, a squeegee section 3213, and a clamp section 214.

[0217] <Expanding section> The expanding section 3208 is configured to expand the sheet member W2 of the wafer ring structure W, thereby dividing the wafer W1 along the dividing line.

[0218] Specifically, the expanding section 3208 has an expanding ring 3281 and a Z-direction moving mechanism 3282 .

[0219] The expand ring 3281 is configured to support the sheet member W2 from the Z2 direction side, thereby expanding (expanding) the sheet member W2. The expand ring 3281 has a ring shape in a plan view. The Z-direction movement mechanism 3282 is configured to move the expand ring 3281 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 3282 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction movement mechanism 3282 is attached to the base 205.

[0220] <Squeegee Section> The squeegee unit 3213 is configured to expand the sheet member W2 and then press the wafer W1 from the Z2 direction to further divide the wafer W1 along the modified layer Wm. Specifically, the squeegee unit 3213 has a pressing unit 3213a, an X-direction moving mechanism 3213b, a Z-direction moving mechanism 3213c, and a rotating mechanism 3213d.

[0221] The pressing unit 3213a is configured to move in the Z1 direction by the Z-direction moving mechanism 3213c, and then move by the rotating mechanism 3213d and the X-direction moving mechanism 3213b while pressing the wafer W1 from the Z2 direction via the sheet member W2, thereby generating bending stress in the wafer W1 and dividing the wafer W1 along the modified layer Wm. The pressing unit 3213a is a squeegee. The pressing unit 3213a is attached to the end of the rotating mechanism 3213d on the Z1 direction side. The Z-direction moving mechanism 3213c is configured to move the rotating mechanism 3213d in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 3213c has, for example, a cylinder. The Z-direction moving mechanism 3213c is attached to the end of the X-direction moving mechanism 3213b on the Z1 direction side. The X-direction moving mechanism 3213b has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The X-direction movement mechanism 3213b is attached to the end of the base 205 on the Z1 direction side.

[0222] In the squeegee unit 3213, after being moved in the Z1 direction by the Z-direction moving mechanism 3213c, the pressing unit 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, while the X-direction moving mechanism 3213b moves the pressing unit 3213a in the Y direction, thereby dividing the wafer W1. In addition, in the squeegee unit 3213, after the pressing unit 3213a has finished moving in the Y direction, the rotating mechanism 3213d rotates the pressing unit 3213a by 90 degrees. In addition, in the squeegee unit 3213, after being rotated 90 degrees, the X-direction moving mechanism 3213b moves the pressing unit 3213a in the X direction while the pressing unit 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, thereby dividing the wafer W1.

[0223] (Control configuration of semiconductor wafer processing equipment) As shown in FIG. 48, the semiconductor wafer processing apparatus 300 includes a first control unit 101, a second control unit 102, a third control unit 103, a fourth control unit 3104, a fifth control unit 3105, a sixth control unit 3106, a seventh control unit 3107, an eighth control unit 3108, a ninth control unit 3109, an expansion control calculation unit 3110, a handling control calculation unit 3111, a dicing control calculation unit 3112, and a memory unit 3113. The first control unit 101, the second control unit 102, the third control unit 103, the fifth control unit 3105, the sixth control unit 3106, the seventh control unit 3107, the eighth control unit 3108, the ninth control unit 3109, the expansion control calculation unit 3110, the handling control calculation unit 3111, the dicing control calculation unit 3112, and the memory unit 3113 have the same configuration as the first control unit 101, the second control unit 102, the third control unit 103, the fourth control unit 104, the fifth control unit 105, the sixth control unit 106, the seventh control unit 107, the eighth control unit 108, the expansion control calculation unit 109, the handling control calculation unit 110, the dicing control calculation unit 111, and the memory unit 112 of the first embodiment, respectively, and therefore their explanations will be omitted.

[0224] The fourth control unit 3104 is configured to control the expanding unit 3208. The fourth control unit 3104 includes a CPU and a storage unit having a ROM, a RAM, etc. The fourth control unit 3104 may include, as the storage unit, an HDD or the like that retains stored information even after the voltage is cut off.

[0225] (Semiconductor chip manufacturing process) The overall operation of the semiconductor wafer processing apparatus 300 will now be described with reference to FIGS.

[0226] Steps S1 to S6, step S8, and step S11 are the same as steps S1 to S6, step S8, and step S11 in the semiconductor chip manufacturing process of the first embodiment, respectively, and therefore will not be described.

[0227] In step S307, the sheet member W2 is expanded by the expanding unit 3208. That is, the expanding ring 3281 is moved in the Z1 direction by the Z-direction moving mechanism 3282. The wafer ring structure W is moved in the Z2 direction by the Z-direction moving mechanism 214b while being held by the clamping unit 214. Then, the sheet member W2 comes into contact with the expanding ring 3281 and is pulled by the expanding ring 3281, thereby expanding. As a result, the wafer W1 is divided along the dividing line (modified layer Wm).

[0228] 50, in step S309, the heat shrink unit 211 heats and shrinks the sheet member W2, and the ultraviolet irradiation unit 212 irradiates the sheet member W2 with ultraviolet rays Ut while the clamp unit 214 rises. At this time, the air intake unit 210c sucks in air near the heated sheet member W2. In step S310, the clamp unit 214 moves the wafer ring structure W to the squeegee unit 3213. That is, the wafer ring structure W, while held by the clamp unit 214, is moved in the Y2 direction by the Y-direction movement mechanism 214c.

[0229] In step S311, after the wafer ring structure W is moved to the squeegee portion 3213, the wafer W1 is pressed by the squeegee portion 3213. As a result, the wafer W1 is further divided by the squeegee portion 3213.

[0230] (Detailed configuration of the dicing control calculation unit) The detailed configuration of the dicing control calculation unit 3112 is the same as the detailed configuration of the dicing control calculation unit 111 in the first embodiment, so a description thereof will be omitted. Note that the other configurations of the second embodiment are the same as the configurations of the first embodiment, so a description thereof will be omitted.

[0231] (Effects of the second embodiment) In the second embodiment, the following effects can be obtained.

[0232] In the second embodiment, as in the first embodiment, the dicing apparatus 1 includes a common mounting member 13b to which both the laser irradiation unit 13a and the high-resolution camera 14a are attached. This makes it possible to prevent an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit 13a and the high-resolution camera 14a in the dicing apparatus 1.

[0233] In the second embodiment, similar to the first embodiment, the dicing apparatus 1 includes a chuck table 12 that moves the wafer W1 in the Df direction while holding the wafer W1. The mounting member 13b is fixed in position both horizontally and vertically. The dicing control calculation unit 3112 controls the high-resolution camera 14a, whose position is fixed by the mounting member 13b, to move the wafer W1 held on the chuck table 12 in the Df direction relative to the high-resolution camera 14a. This causes the high-resolution camera 14a to continuously expose the high-resolution camera 14a to the predetermined street Ws1 and capture a panning image Gf while forming a modified layer Wm on the wafer W1 with the laser L at the predetermined street Ws1. As a result, by capturing the crack Wc with the high-resolution camera 14a in a fixed position, the focal position Fp of the high-resolution camera 14a can be kept constant, thereby enabling the capture of a panning image Gf in which the crack Wc is clearly displayed. Note that other advantages of the second embodiment are similar to those of the first embodiment, and therefore will not be described further.

[0234] [Third embodiment] 53 to 70, the configuration of a semiconductor wafer processing apparatus 400 according to the third embodiment will be described. Unlike the first embodiment, the third embodiment performs control such that the high-resolution camera 14a extends to capture an image of the crack Wc. Note that in the third embodiment, detailed descriptions of the same configuration as the first embodiment will be omitted.

[0235] As shown in FIG. 53, a semiconductor wafer processing apparatus 400 of the third embodiment includes a dicing apparatus 401 and an expanding apparatus 2.

[0236] In the following, the up-down direction is referred to as the Z direction, the up direction as the Z1 direction, and the down direction as the Z2 direction. Of the horizontal directions perpendicular to the Z direction, the direction in which the dicing device 401 and the expanding device 2 are lined up is referred to as the X direction, the X direction toward the expanding device 2 in the X direction is referred to as the X1 direction, and the X direction toward the dicing device 401 in the X direction is referred to as the X2 direction. Of the horizontal directions, the direction perpendicular to the X direction is referred to as the Y direction, one side of the Y direction is referred to as the Y1 direction, and the other side of the Y direction is referred to as the Y2 direction.

[0237] (dicing equipment) 53, the dicing device 1 includes a base 11, a chuck table unit 12, a laser unit 13, and an imaging unit 14. The chuck table unit 12 is an example of the "table unit" in the claims.

[0238] <Laser section> The laser unit 13 is configured to irradiate a laser beam L onto the wafer W1 of the wafer ring structure W held by the chuck table unit 12. The laser unit 13 is disposed on the Z1 direction side of the chuck table unit 12. The laser unit 13 has a laser irradiation unit 13a, a mounting member 13b, and a Z direction movement mechanism 13c.

[0239] <Imaging unit> The imaging unit 14 is configured to capture an image of the wafer W1 of the wafer ring structure W held by the chuck table 12. The imaging unit 14 is disposed on the Z1 side of the chuck table 12. The imaging unit 14 includes a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction movement mechanism 14c, and a Z-direction movement mechanism 14d. The high-resolution camera 14a is an example of a "first imaging unit" in the claims. The wide-angle camera 14b is an example of a "second imaging unit" in the claims.

[0240] (Control configuration of semiconductor wafer processing system) As shown in FIG. 54, dicing apparatus 401 includes a dicing control calculation unit 4111. An external control device 4100 is provided outside dicing apparatus 401. A semiconductor wafer processing system 4000 is configured by combining semiconductor wafer processing apparatus 400 including dicing apparatus 401 and external control device 4100. Here, external control device 4100 sets imaging conditions for crack Wc by high-resolution camera 14a. Dicing control calculation unit 4111 is an example of a "control unit" in the claims.

[0241] The external control device 4100 includes a CPU, a storage unit having a ROM, a RAM, etc., and a display unit. The external control device 4100 may include, as the storage unit, an HDD or the like that retains stored information even after the voltage is cut off.

[0242] (Setting imaging conditions for cracks using a high-resolution camera) As shown in FIG. 55, in the dicing apparatus 401, a modified layer Wm is formed on the wafer W1 along the Df direction on a predetermined street Ws1 by the laser irradiation unit 13a. The high-resolution camera 14a is continuously exposed to light at a predetermined portion of the predetermined street Ws1, capturing cracks Wc on the surface of the wafer W1 on the side of the high-resolution camera 14a (the Z1 direction side) caused by the modified layer Wm, and a panning image Gf is captured by the high-resolution camera 14a. The dicing apparatus 401 performs the first inspection described in the first embodiment based on the panning image Gf. The panning image Gf is an image (long-exposure image) of the cracks Wc on the surface of the wafer W1 captured by keeping the shutter of the high-resolution camera 14a open while moving the wafer W1 relative to the laser irradiation unit 13a and the high-resolution camera 14a in the Df direction by the chuck table 12. The Df direction is an example of the "processing direction" in the claims.

[0243] 55 to 57 and 63 to 65, for the sake of convenience, only the predetermined street Ws1 or both the predetermined street Ws1 and the predetermined street Ws2 are shown among the multiple streets Ws on the wafer W1. Also, for the sake of convenience, the laser irradiation unit 13a and the high-resolution camera 14a are shown in a simplified form in FIGS.

[0244] 56, in the dicing apparatus 401, when the focal position Fp of the laser irradiation unit 13a reaches the end En from the start St1 of the predetermined street Ws1, the laser irradiation unit 13a stops emitting the laser L and the high-resolution camera 14a stops capturing images of the cracks Wc. Then, in the dicing apparatus 401, in order to prevent an increase in the processing time for forming the modified layer Wm of the wafer W1, the wafer W1 moves in the Y2 direction relative to the laser irradiation unit 13a and the high-resolution camera 14a from the predetermined street Ws1 toward the start St2 in the Df direction of the next predetermined street Ws2.

[0245] 56, the laser irradiation unit 13a forms a modified layer Wm in the wafer W1 in a processing section Rm from the start St1 in the Df direction of the predetermined street Ws1 to the end En. Furthermore, the high-resolution camera 14a captures the cracks Wc on the surface of the wafer W1 in the Z1 direction in an imaging section Ri from the start St1 in the Df direction of the predetermined street Ws1 to a point Ph just before the end En. Therefore, the high-resolution camera 14a does not capture the cracks Wc on the surface of the wafer W1 in the Z1 direction in a non-imaging section Rni from the point Ph to the end En.

[0246] This imaging implementation section Ri is set in advance in the external control device 4100 before processing of the wafer W1 is started by the dicing device 401. The dicing control calculation unit 4111 is configured to perform control to acquire imaging conditions having the imaging implementation section Ri from the external control device 4100 before starting formation of the modified layer Wm on the wafer W1 by the laser irradiation unit 13a. Here, in the case shown in Figure 56, even if the high-resolution camera 14a does not image the cracks Wc in the non-imaging implementation section Rni, the high-resolution camera 14a images the cracks Wc in the imaging implementation section Ri, so it is possible to perform the first inspection described in the first embodiment.

[0247] 57, on a wafer W1 that is circular when viewed from the Z1 direction, the length of the predetermined street Ws1 in the Df direction is short at a position near the outer periphery of the wafer W1. If the length of the predetermined street Ws1 in the Df direction is shorter than the distance between the focal position Fp of the laser irradiation unit 13a and the optical center Po, the focal position Fp of the laser irradiation unit 13a will reach the end En of the predetermined street Ws1 before the high-resolution camera 14a starts imaging the crack Wc on the surface of the wafer W1 on the Z1 direction side. In this case, the high-resolution camera 14a will not be able to image the crack Wc on the surface of the wafer W1 on the Z1 direction side.

[0248] Therefore, the external control device 4100 is configured to control the setting of the imaging implementation section Ri for extending the imaging of the crack Wc by the high-resolution camera 14a after the focal position Fp of the laser irradiation unit 13a reaches the end En in the Df direction of the predetermined street Ws1. The setting of the imaging implementation section Ri for extending the imaging of the crack Wc by the high-resolution camera 14a may be set not only in the case where the high-resolution camera 14a cannot image the crack Wc at all as shown in Figure 57, but also in the case where the high-resolution camera 14a can image the crack Wc as shown in Figure 56, so that the high-resolution camera 14a can image the crack Wc in the non-imaging implementation section Rni.

[0249] Specifically, the external control device 4100 is configured to perform control to determine whether an imaging implementation section Ri for capturing an image of the crack Wc by the high-resolution camera 14a can be set based on the larger of a first distance based on the minimum exposure time of the high-resolution camera 14a and a second distance based on the maximum illumination intensity of the high-resolution camera 14a. That is, the external control device 4100 is configured to be able to determine whether the imaging implementation section Ri requires an exposure time shorter than the time resolution of the high-resolution camera 14a. The external control device 4100 is also configured to be able to determine whether the imaging implementation section Ri requires an illumination intensity exceeding the maximum illumination intensity of the high-resolution camera 14a. In this way, the first distance and the second distance are each required conditions for the imaging implementation section Ri so as not to exceed the limit of the setting value of the high-resolution camera 14a when extending the imaging of the crack Wc by the high-resolution camera 14a.

[0250] Here, the first distance is calculated by multiplying the minimum value of the exposure time of the high-resolution camera 14a by the moving speed of the wafer W1 in the Df direction (first distance = "minimum value of exposure time Tmin" x "moving speed V"). The moving speed of the wafer W1 in the Df direction is a preset constant speed.

[0251] The second distance is calculated by dividing a predetermined coefficient, which is a coefficient for setting the brightness value (average brightness value Ba) of the crack Wc in the panning image Gf, by the maximum illumination intensity of the high-resolution camera 14a (second distance = "predetermined coefficient C" / "maximum illumination intensity Lmax"). The predetermined coefficient is calculated by multiplying a predetermined illumination intensity L0, a predetermined exposure time T0, and the moving speed of the wafer W1 in the Df direction (predetermined coefficient C = "predetermined illumination intensity L0" × "predetermined exposure time T0" × "moving speed V"). The predetermined illumination intensity L0 and the predetermined exposure time T0 are each set by the external control device 4100 based on an image of the crack Wc captured by the high-resolution camera 14a.

[0252] As described above, the minimum value of the exposure time of the high-resolution camera 14a, the moving speed of the wafer W1 in the Df direction, the predetermined coefficient, and the maximum value of the illumination intensity of the high-resolution camera 14a are all preset constants.

[0253] Here, the length of each of the plurality of streets Ws on the wafer W1 in the Df direction is also a preset constant. Therefore, the user performs an operation to set an imaging section Ri within the length of each of the plurality of streets Ws on the wafer W1 in the Df direction based on the length of each of the plurality of streets Ws on the wafer W1 in the Df direction, the minimum value of the exposure time of the high-resolution camera 14a, the moving speed of the wafer W1 in the Df direction, a predetermined coefficient, and the maximum value of the illumination intensity of the high-resolution camera 14a.

[0254] Here, the setting of the predetermined illumination intensity L0 and the predetermined exposure time T0 will be described with reference to FIGS.

[0255] As an example, the predetermined illumination intensity L0 and the predetermined exposure time T0 are set by the external control device 4100 based on the first still image Gs1, the second still image Gs2, the third still image Gs3, the fourth still image Gs4 and the fifth still image Gs5 as shown in FIG. 58.

[0256] Each of the first still image Gs1, the second still image Gs2, the third still image Gs3, the fourth still image Gs4 and the fifth still image Gs5 is a still image captured by the high-resolution camera 14a while the wafer W1 held on the chuck table portion 12 is stationary and not moved in the Df direction relative to the high-resolution camera 14a, which is fixed in position by the mounting member 13b.

[0257] The illumination intensity Lx1 of the high-resolution camera 14a when capturing the first still image Gs1 is the same as the illumination intensity Lx2 of the high-resolution camera 14a when capturing the second still image Gs2, the illumination intensity Lx3 of the high-resolution camera 14a when capturing the third still image Gs3, and the illumination intensity Lx4 of the high-resolution camera 14a when capturing the fourth still image Gs4. Furthermore, compared to the exposure time Tx1 of the high-resolution camera 14a when capturing the first still image Gs1, the exposure time Tx2 of the high-resolution camera 14a when capturing the second still image Gs2 is twice as long, the exposure time Tx3 of the high-resolution camera 14a when capturing the third still image Gs3 is three times as long, and the exposure time Tx4 of the high-resolution camera 14a when capturing the fourth still image Gs4 is four times as long.

[0258] As shown in the first still image Gs1, second still image Gs2, third still image Gs3, and fourth still image Gs4 in Figure 58, if the exposure time alone is increased, the brightness value will exceed the upper limit (overflow), making it impossible to obtain accurate brightness value information for the image.

[0259] Furthermore, the illumination intensity Lx1 of the high-resolution camera 14a when capturing the first still image Gs1 is the same as the illumination intensity Lx2 of the high-resolution camera 14a when capturing the fifth still image Gs5. The exposure time Tx2 of the high-resolution camera 14a when capturing the fifth still image Gs5 is 1 / 5 of the exposure time Tx1 of the high-resolution camera 14a when capturing the first still image Gs1. In this case as well, the contrast (difference in brightness) between the crack Wc and the background (portions of the image other than the crack Wc) cannot be sufficiently ensured, or the brightness value exceeds the lower limit (overflows), making it impossible to obtain accurate brightness value information of the image.

[0260] Therefore, the exposure time Tx is calculated by dividing the imaging section Ri by the moving speed of the wafer W1 in the Df direction (exposure time Tx = "imaging section Ri" / "moving speed V"), but unless the illumination intensity Lx appropriate for the exposure time Tx is set, it is not possible to obtain a panning image Gf with sufficient contrast.

[0261] Therefore, the external control device 4100 determines the optimal still image from among the above-mentioned first still image Gs1, second still image Gs2, third still image Gs3, fourth still image Gs4 and fifth still image Gs5, which is an image for setting each of the predetermined illumination intensity L0 and the predetermined exposure time T0, and which satisfies the conditions that contrast can be ensured and some brightness values ​​do not reach the upper limit, and is configured to be able to store information such as the brightness values ​​of the optimal still image as part of the image inspection conditions.

[0262] Specifically, as shown in FIG. 59, the external control device 4100 is configured to control the determination of whether a still image is optimal based on the luminance value detectable range Rbr of the high-resolution camera 14a and the pass / fail criteria width range Wcg corresponding to the extraction threshold Tre. That is, the external control device 4100 is configured to control the determination of an optimal still image if the luminance value of the still image falls within the luminance value detectable range Rbr and the range in the still image below the extraction threshold Tre falls within the pass / fail criteria width range Wcg. Here, the extraction threshold Tre in the still image is the luminance value determined by the external control device 4100 to have the steepest gradient in a graph showing the relationship between the pixel position of the still image and the luminance value of the corresponding pixel. The pass / fail criteria width range Wcg is preset. The luminance value detectable range Rbr is the gradation of the high-resolution camera 14a. Here, the gradation is the shade of black and white expressed by a numerical value from 0 to 255 in the case of 8-bit black and white, or the shade of black and white expressed by a numerical value from 0 to 4095 in the case of 12-bit black and white.

[0263] 59 shows a graph illustrating the relationship between the pixel position of the first still image Gs1 and the luminance value of the corresponding pixel. Here, the external control device 4100 is configured to perform control to determine that the first still image Gs1 is an optimal still image based on the fact that the luminance value of the first still image Gs1 falls within the luminance value detectable range Rbr and that the range in the first still image Gs1 that is equal to or less than the extraction threshold Tre falls within the non-defective product criterion width range Wcg.

[0264] 60 also shows a graph illustrating the relationship between the pixel positions of the third still image Gs3 and the luminance values ​​of the corresponding pixels. The measured luminance values ​​do not exceed the detectable luminance range Rbr. Therefore, the luminance values ​​outside the detectable luminance range Rbr actually overflow and become the upper limit of the detectable luminance range Rbr. Here, the external control device 4100 is configured to perform control to determine that the third still image Gs3 is not an optimal still image based on the fact that the luminance value of the third still image Gs3 does not fall within the detectable luminance range Rbr (i.e., it has overflowed).

[0265] 61 also shows a graph illustrating the relationship between pixel positions in the fifth still image Gs5 and the luminance values ​​of the corresponding pixels. Here, the external control device 4100 is configured to perform control to determine that the fifth still image Gs5 is not an optimal still image based on the determination that the contrast is insufficient because the maximum luminance value in the fifth still image Gs5 is low, approximately half the luminance value range of the luminance value detectable range Rbr. Description of the second still image Gs2 and the fourth still image Gs4 will be omitted.

[0266] As a result, the first still image Gs1 is selected (determined) by the external control device 4100 as the optimum still image for setting the predetermined illumination intensity L0 and the predetermined exposure time T0.

[0267] The external control device 4100 is configured to control the setting of the illumination intensity Lx of the panning image Gf based on a predetermined illumination intensity L0, which is the illumination intensity of a still image (the first still image Gs1 in the above example) that is determined to be capable of obtaining an image with sufficient contrast, a predetermined exposure time T0, which is the exposure time of the still image, and the exposure time Tx.

[0268] That is, the illumination intensity Lx of the panning image Gf is calculated by multiplying a predetermined illumination intensity L0 by a predetermined exposure time T0 and dividing the result by the exposure time Tx (illumination intensity Lx = "predetermined illumination intensity L0" x "predetermined exposure time T0" / "exposure time Tx").

[0269] This allows a panning image Gf with sufficient contrast to be acquired, as shown in FIG. 62. If the imaging section Ri is very short and the exposure time Tx is shorter than the minimum exposure time of the high-resolution camera 14a, a panning image Gf with sufficient contrast cannot be acquired. However, as described above, by extending the imaging section Ri by using the high-resolution camera 14a, the exposure time Tx can be increased. This allows a panning image Gf with sufficient contrast to be acquired. Note that the exposure time Tx is shorter than the maximum exposure time of the high-resolution camera 14a.

[0270] Therefore, the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a are set to match the value obtained by multiplying a predetermined illumination intensity L0 by a predetermined exposure time T0 in order to obtain a panning image Gf with sufficient contrast. Specifically, the value obtained by multiplying the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a matches the value obtained by multiplying the predetermined illumination intensity L0 by the predetermined exposure time T0. That is, as an example, if the illumination intensity Lx of the high-resolution camera 14a is doubled relative to the predetermined illumination intensity L0, the exposure time Tx of the high-resolution camera 14a is halved relative to the predetermined exposure time T0. Thus, the relationship between the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a is inversely proportional, such that the change in the illumination intensity Lx of the high-resolution camera 14a relative to the predetermined illumination intensity L0 is offset by the change in the exposure intensity of the high-resolution camera 14a relative to the predetermined exposure time T0.

[0271] 63, the external control device 4100 is configured to perform control to acquire the imaging implementation section Ri based on receiving an operation to set the imaging implementation section Ri. The external control device 4100 is configured to perform control to determine that the imaging implementation section Ri can be set if the acquired imaging implementation section Ri is equal to or greater than the larger of the first distance and the second distance based on a comparison between the acquired imaging implementation section Ri and the larger of the first distance and the second distance. In this case, when receiving an operation to determine the setting of the imaging implementation section Ri, the external control device 4100 is configured to perform control to store imaging conditions, including the imaging implementation section Ri, the exposure time corresponding to the imaging implementation section Ri, and the illumination intensity corresponding to the imaging implementation section Ri, in a storage unit in order to transmit them to the dicing apparatus 401.

[0272] The imaging conditions include exposing the high-resolution camera 14a to a portion of the predetermined street Ws1 where a modified layer Wm is to be formed by the laser L, and not exposing the high-resolution camera 14a to a portion of the predetermined street Ws1 where a modified layer Wm is not to be formed by the laser L. That is, when the focal position Fp of the laser irradiation unit 13a reaches the starting end St1 of the predetermined street Ws1, irradiation of the laser L from the laser irradiation unit 13a is started and a modified layer Wm is formed on the predetermined street Ws1, but imaging by the high-resolution camera 14a is not performed in the section from the start of irradiation of the laser L to the arrival of the high-resolution camera 14a at the starting end St1 of the predetermined street Ws1. In this way, the imaging implementation section Ri does not include the section from the start of irradiation of the laser L to the arrival of the high-resolution camera 14a at the starting end St1 of the predetermined street Ws1, and therefore satisfies the condition that the high-resolution camera 14a is not exposed to a portion of the predetermined street Ws1 where a modified layer Wm is not to be formed by the laser L. Furthermore, the imaging section Ri includes the section from when the focal position Fp of the laser irradiation section 13a reaches the start point St1 of the specified street Ws1 to when it reaches the end point En, and therefore satisfies the condition that the high-resolution camera 14a is exposed to the portion of the specified street Ws1 where the modified layer Wm is formed by the laser L.

[0273] As shown in Figures 64 and 65, the external control device 4100 is configured to perform control to determine that the imaging implementation section Ri cannot be set if the acquired imaging implementation section Ri is small, based on a comparison between the acquired imaging implementation section Ri and the larger of the first distance and the second distance.

[0274] Here, as shown in FIG. 64, the external control device 4100 is configured to control the storage of imaging conditions, including the imaging implementation section Ri, the exposure time corresponding to the imaging implementation section Ri, the illumination intensity corresponding to the imaging implementation section Ri, and the image processing to amplify the average brightness value Ba contained in the panning image Gf (see FIG. 68), in a memory unit in order to transmit the imaging conditions to the dicing device 401, based on acquiring a user operation indicating that image processing is to be performed, among the user's decisions on whether or not to perform image processing to amplify the brightness value (average brightness value Ba) contained in the panning image Gf.

[0275] Also, as shown in FIG. 65, the external control device 4100 is configured to control storage of an imaging condition, a non-imaging section Rni, in a memory unit in order to transmit the imaging condition to the dicing device 401 based on acquisition of a user operation indicating that the user will not set the imaging section Ri.

[0276] The external control device 4100 is configured to control transmission of the imaging conditions to the dicing device 401 via the network based on an inquiry about the imaging conditions from the dicing control calculation unit 4111.

[0277] (Detailed configuration of the dicing control calculation unit) As shown in Figures 66 and 67, the dicing control calculation unit 4111 of the third embodiment is configured to move the wafer W1 relative to the laser irradiation unit 13a and the high-resolution camera 14a in the Df direction based on the acquired imaging conditions, so that the focal position Fp of the laser L reaches the end En of the specified street Ws1 in the Df direction, and then continue the relative movement of the wafer W1 to extend the imaging of the crack Wc by the high-resolution camera 14a and control the imaging of a panning image Gf.

[0278] Here, the dicing control calculation unit 4111 is configured to perform control such that the wafer W1 held on the chuck table 12 is moved in the direction Df relative to the high-resolution camera 14a, whose position is fixed by the mounting member 13b, to form a modified layer Wm on the wafer W1 by the laser L at the predetermined street Ws1 while continuously exposing the high-resolution camera 14a to light at the predetermined street Ws1 and capture a panning image Gf with the high-resolution camera 14a. Such control is also performed in the dicing control calculation unit 111 of the first embodiment and the dicing control calculation unit 3112 of the second embodiment.

[0279] That is, when forming a modified layer Wm on the wafer W1 and imaging cracks Wc on the surface of the wafer W1 facing the high-resolution camera 14a caused by the modified layer Wm with the high-resolution camera 14a, the dicing control calculation unit 4111 is configured to control the high-resolution camera 14a to continuously expose and capture a panning image Gf based on the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a, which are set to match the value obtained by multiplying a predetermined illumination intensity L0 at which the cracks Wc can be recognized by a predetermined exposure time T0. As described above, the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a are each set to match the value obtained by multiplying the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a with the value obtained by multiplying the predetermined illumination intensity L0 and the predetermined exposure time T0.

[0280] The dicing control calculation unit 4111 is configured to extend the imaging of the crack Wc by the high-resolution camera 14a to capture a panning image Gf based on imaging conditions having information on an imaging implementation section Ri based on the larger of a first distance based on the minimum value of the exposure time of the high-resolution camera 14a and a second distance based on the maximum value of the illumination intensity of the high-resolution camera 14a. The laser L is irradiated from the start point St1 to the end point En in the Df direction of the predetermined street Ws1.

[0281] 66, when the length L1 of the predetermined street Ws1 in the Df direction is longer than the distance between the focal position Fp of the laser L and the optical center Po, the dicing control calculation unit 4111 continues the relative movement of the wafer W1 and stops the imaging of the crack Wc by the high-resolution camera 14a when the focal position Fp of the laser L reaches the end En in the Df direction of the predetermined street Ws1 in a preset imaging implementation section Ri in which the imaging of the crack Wc by the high-resolution camera 14a is not set. Here, when the focal position Fp of the laser L reaches the end En in the Df direction of the predetermined street Ws1, the irradiation of the laser L from the laser irradiation unit 13a stops.

[0282] 67, when the length L2 of the predetermined street Ws1 in the Df direction is shorter than the distance between the focal position Fp of the laser L and the optical center Po, the dicing control calculation unit 4111 is configured to extend the imaging of the crack Wc by the high-resolution camera 14a in a preset imaging implementation section Ri in which the imaging of the crack Wc by the high-resolution camera 14a is set, and then control the relative movement of the wafer W1 to continue and extend the imaging of the crack Wc by the high-resolution camera 14a to capture a panning image Gf after the focal position Fp of the laser L reaches the end En in the Df direction of the predetermined street Ws1. Here, when the focal position Fp of the laser L reaches the end En in the Df direction of the predetermined street Ws1, the irradiation of the laser L from the laser irradiation unit 13a stops.

[0283] 68, when the imaging section Ri when the high-resolution camera 14a is used to extend the predetermined street Ws1 to capture the crack Wc is too far away to set an exposure time and illumination intensity that allow the crack Wc to be recognized in the panning image Gf, the dicing control calculation unit 4111 is configured to perform image processing based on the acquired imaging conditions to amplify the luminance value (average luminance value Ba) contained in the panning image Gf captured by the high-resolution camera 14a. That is, the dicing control calculation unit 4111 is configured to multiply the reference value Gr (ground level) of the panning image Gf by a predetermined value to amplify it to the reference value Gra, and to multiply the average luminance value Ba in the panning image Gf by the predetermined value to amplify it to the average luminance value Baa. The predetermined value is set appropriately by the user in advance. This also amplifies the contrast.

[0284] Furthermore, as shown in Figure 69, when the imaging implementation section Ri in which the crack Wc is imaged by the high-resolution camera 14a is a section longer than the distance between the focal position Fp of the laser L and the optical center Po, the dicing control calculation unit 4111 is configured to stop imaging of the crack Wc by the high-resolution camera 14a when the focal position Fp of the laser L reaches the end En in the Df direction of the specified street Ws1, and control the camera to move to the next specified street Ws2 (starting end St2 (see Figure 55)) that forms the modified layer Wm, based on the fact that the extension of the imaging of the crack Wc by the high-resolution camera 14a is not set in the imaging implementation section Ri included in the acquired imaging conditions.

[0285] 66, 67, and 69 satisfy the condition that the high-resolution camera 14a is not exposed to a portion of the predetermined street Ws1 where the modified layer Wm is not formed by the laser L, and the condition that the high-resolution camera 14a is exposed to a portion of the predetermined street Ws1 where the modified layer Wm is formed by the laser L. As a result, the dicing control calculation unit 4111 is configured to control the imaging of the crack Wc by the high-resolution camera 14a based on the imaging implementation section Ri by the high-resolution camera 14a, the predetermined illumination intensity L0, and the predetermined exposure time T0, which are set so as to further satisfy the imaging conditions that the high-resolution camera 14a is exposed to a portion of the predetermined street Ws1 where the modified layer Wm is formed by the laser L, and the high-resolution camera 14a is not exposed to a portion of the predetermined street Ws1 where the modified layer Wm is not formed by the laser L.

[0286] The other configurations of the third embodiment are the same as those of the first embodiment, and therefore the description thereof will be omitted.

[0287] (Crack inspection process) The crack inspection process by the dicing control calculation unit 4111 will be described below with reference to FIG.

[0288] In step S401, the dicing control calculation unit 4111 acquires the imaging execution section Ri from the external control device 4100. In step S402, the dicing control calculation unit 4111 causes the laser irradiation unit 13a to irradiate the laser L while moving the wafer W1 by the chuck table unit 12 along the Df direction (processing direction) on the predetermined street Ws1 relative to the laser irradiation unit 13a and the high-resolution camera 14a. In step S403, the dicing control calculation unit 4111 causes the high-resolution camera 14a to capture an image of the crack Wc on the surface of the wafer W1.

[0289] Thus, in steps S401 to S403, the dicing control calculation unit 4111 moves the wafer W1 held on the chuck table 12 in the direction Df relative to the high-resolution camera 14a, whose position is fixed by the mounting member 13b, to form a modified layer Wm on the wafer W1 with the laser L at the predetermined street Ws1 while continuously exposing the high-resolution camera 14a to the predetermined street Ws1 and causing the high-resolution camera 14a to capture a panning image Gf. This process is also performed by the dicing control calculation unit 111 of the first embodiment and the dicing control calculation unit 3112 of the second embodiment. The illumination intensity Lx and exposure time Tx of the high-resolution camera 14a are each set so that the value obtained by multiplying the illumination intensity Lx and the exposure time Tx matches the value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which cracks Wc can be recognized.

[0290] In step S404, the dicing control calculation unit 4111 determines whether the focal position Fp of the laser irradiation unit 13a has reached the end En in the Df direction of the predetermined street Ws1. If the focal position Fp of the laser irradiation unit 13a has reached the end En in the Df direction of the predetermined street Ws1, the process proceeds to step S405, and if the focal position Fp of the laser irradiation unit 13a has not reached the end En in the Df direction of the predetermined street Ws1, the process returns to step S402.

[0291] In step S405, the dicing control calculation unit 4111 determines whether the imaging implementation section Ri has ended. If the imaging implementation section Ri has ended, the process proceeds to step S408, where the process moves to the next street Ws, and the crack inspection process ends. If the imaging implementation section Ri has not ended, the process proceeds to step S406.

[0292] In step S406, the dicing control calculation unit 4111 causes the high-resolution camera 14a to extend and image the crack Wc on the surface of the wafer W1. In step S407, the dicing control calculation unit 4111 determines whether the imaging implementation section Ri has ended. If the imaging implementation section Ri has ended, the process proceeds to step S408, where the process moves to the next street Ws, and the crack inspection process ends. If the imaging implementation section Ri has not ended, the process returns to step S406.

[0293] (Effects of the third embodiment) In the third embodiment, the following effects can be obtained.

[0294] In the third embodiment, similarly to the first embodiment, the dicing apparatus 401 includes a common mounting member 13b to which both the laser irradiation unit 13a and the high-resolution camera 14a are attached. This makes it possible to prevent an increase in the number of parts and complexity in the mounting structure of the laser irradiation unit 13a and the high-resolution camera 14a in the dicing apparatus 401.

[0295] In the third embodiment, as described above, the dicing apparatus 401 includes a dicing control calculation unit 4111 that controls the dicing apparatus 401 to form a modified layer Wm on the wafer W1 by using the laser L along the Df direction on a predetermined street Ws1 among the multiple streets Ws, while continuously exposing the high-resolution camera 14a to a predetermined portion of the predetermined street Ws1 to capture cracks Wc on the surface on the side of the high-resolution camera 14a that are generated by the modified layer Wm, and then capturing a panning image Gf with the high-resolution camera 14a. This allows the panning image Gf capturing the cracks Wc on the surface on the side of the high-resolution camera 14a to reliably confirm that the cracks Wc have reached the surface of the wafer W1, thereby identifying areas where the wafer W1 is not properly divided due to the cracks Wc not having reached the surface of the wafer W1. As a result, the irradiation conditions of the laser L can be changed and the laser L can be irradiated again on the predetermined street Ws1. Furthermore, by identifying areas where the wafer W1 is not properly divided and performing subsequent detailed inspections, the number of detailed inspections can be reduced.

[0296] Furthermore, in the third embodiment, as described above, when forming a modified layer Wm on the wafer W1 and using the high-resolution camera 14a to capture cracks Wc on the surface of the wafer W1 facing the high-resolution camera 14a, which are caused by the modified layer Wm, the dicing control calculation unit 4111 is configured to control the high-resolution camera 14a to continuously expose and capture a panning image Gf based on the illumination intensity Lx and exposure time Tx of the high-resolution camera 14a, which are set to match the value obtained by multiplying a predetermined illumination intensity L0 and a predetermined exposure time T0 at which the cracks Wc can be recognized. As a result, the cracks Wc are clearly displayed in the panning image Gf captured by continuously exposing the high-resolution camera 14a, allowing the dicing control calculation unit 4111 to reliably recognize the cracks Wc.

[0297] Furthermore, in the third embodiment, as described above, the dicing apparatus 401 includes a chuck table 12 that moves the wafer W1 in the direction Df while holding the wafer W1. The mounting member 13b is arranged in a fixed position in the horizontal and vertical directions. The dicing control calculation unit 4111 is configured to control the high-resolution camera 14a, whose position is fixed by the mounting member 13b, to move the wafer W1 held on the chuck table 12 in the direction Df relative to the high-resolution camera 14a, which forms a modified layer Wm on the wafer W1 with the laser L at the predetermined street Ws1, while continuously exposing the high-resolution camera 14a to the predetermined street Ws1 and capturing a panning image Gf with the high-resolution camera 14a. By capturing the crack Wc with the high-resolution camera 14a in a fixed position, the focal position Fp of the high-resolution camera 14a can be kept constant, allowing a panning image Gf in which the crack Wc is clearly displayed to be obtained.

[0298] Furthermore, in the third embodiment, as described above, the high-resolution camera 14a is attached to the attachment member 13b together with the laser irradiation unit 13a in a state in which the focal position Fp of the laser L of the laser irradiation unit 13a and the optical center Po of the high-resolution camera 14a are arranged side by side along the Df direction when viewed from the Z1 direction side (in a plan view). The dicing control calculation unit 4111 is configured to move the wafer W1 in the Df direction relative to the laser irradiation unit 13a and the high-resolution camera 14a, so that the focal position Fp of the laser L reaches the end En of the predetermined street Ws1 in the Df direction, and then continue the relative movement of the wafer W1, thereby extending the imaging of the crack Wc by the high-resolution camera 14a to capture a panning image Gf. Here, because the focal position Fp of the laser L of the laser irradiation unit 13a and the optical center Po of the high-resolution camera 14a are arranged side by side along the Df direction, when the focal position Fp of the laser L reaches the end En of the predetermined street Ws1 in the Df direction, the crack Wc in the portion between the focal position Fp of the laser L of the laser irradiation unit 13a and the optical center Po of the high-resolution camera 14a is not imaged by the high-resolution camera 14a. Therefore, by extending the imaging of the crack Wc by the high-resolution camera 14a, the crack Wc can be imaged by the high-resolution camera 14a, and therefore the crack Wc formed on the predetermined street Ws1 can be reliably imaged by the high-resolution camera 14a to the extent necessary.

[0299] Furthermore, in the third embodiment, as described above, the dicing control calculation unit 4111 is configured to extend the imaging of the crack Wc by the high-resolution camera 14a to capture a panning image Gf based on imaging conditions having information on an imaging implementation section Ri based on the larger of a first distance based on the minimum value of the exposure time of the high-resolution camera 14a and a second distance based on the maximum value of the illumination intensity of the high-resolution camera 14a. As a result, the imaging implementation section Ri is set so as not to exceed the settable numerical limits of the minimum value of the exposure time and the maximum value of the illumination intensity of the high-resolution camera 14a, so that a panning image Gf in which the crack Wc can be recognized can be acquired.

[0300] Furthermore, in the third embodiment, as described above, when the imaging implementation section Ri when the high-resolution camera 14a on the predetermined street Ws1 images the crack Wc by extending the imaging section Ri is a distance that makes it impossible to set an exposure time and illumination intensity that allow the crack Wc to be recognized in the panning image Gf, the dicing control calculation unit 4111 is configured to perform image processing to amplify the luminance value (average luminance value Ba) included in the panning image Gf extended and captured by the high-resolution camera 14a on the predetermined street Ws1. As a result, even if the exposure time and illumination intensity of the high-resolution camera 14a exceed the settable limits of their respective values, the high-resolution camera 14a can image the crack Wc within the settable ranges of their respective values, and then amplify the luminance value (average luminance value Ba) included in the acquired panning image Gf to obtain a panning image Gf in which the crack Wc is recognized.

[0301] Furthermore, in the third embodiment, as described above, when the length of the predetermined street Ws1 in the Df direction is longer than the distance between the focal position Fp of the laser L and the optical center Po of the high-resolution camera 14a, the dicing control calculation unit 4111 is configured to stop imaging of the crack Wc by the high-resolution camera 14a and control the camera 14a to move to the next street Ws where a modified layer Wm will be formed when the focal position Fp of the laser L reaches the end En of the predetermined street Ws1 in the Df direction in a preset imaging implementation section Ri where the high-resolution camera 14a images the crack Wc and where an extension of the imaging of the crack Wc by the high-resolution camera 14a is not set. This makes it possible to obtain information about the crack Wc necessary for inspection based on the crack Wc while minimizing the time required to move from the predetermined street Ws1 to the next street Ws. This ensures the accuracy of the inspection and prevents an increase in the processing time required to form a modified layer Wm on the wafer W1.

[0302] Furthermore, in the third embodiment, as described above, the dicing control calculation unit 4111 is configured to control the wafer W1 to continue relative movement after the focal position Fp of the laser L reaches the end En of the predetermined street Ws1 in the Df direction in a predetermined imaging implementation section Ri in which the imaging of the crack Wc by the high-resolution camera 14a is extended to capture a panning image Gf when the length of the predetermined street Ws1 in the Df direction is shorter than the distance between the focal position Fp of the laser L and the optical center Po of the high-resolution camera 14a. Here, in the case of the short section, if the focal position Fp of the laser L reaches the end En of the predetermined street Ws1 in the Df direction and then moves to the street Ws next to the predetermined street Ws1, the crack Wc of the predetermined street Ws1 cannot be imaged. Therefore, by extending the imaging of the crack Wc by the high-resolution camera 14a, even if the length of the predetermined street Ws1 in the Df direction is short, the imaging of the crack Wc by the high-resolution camera 14a can be performed.

[0303] Furthermore, in the third embodiment, as described above, the dicing control calculation unit 4111 is configured to control the high-resolution camera 14a to capture the cracks Wc based on the imaging implementation section Ri, the predetermined exposure time T0, and the predetermined illumination intensity L0, which are set to further satisfy the imaging conditions of exposing the high-resolution camera 14a to the portion of the predetermined street Ws1 where the modified layer Wm is formed by the laser L, and not exposing the high-resolution camera 14a to the portion of the predetermined street Ws1 where the modified layer Wm is not formed by the laser L. As a result, the high-resolution camera 14a does not capture the portion of the predetermined street Ws1 where the modified layer Wm is not formed by the laser L, but captures only the portion of the predetermined street Ws1 where the modified layer Wm is formed by the laser L and the cracks Wc are formed. Therefore, an image (panning image Gf) in which the cracks Wc are more clearly displayed can be obtained. Note that other effects of the third embodiment are similar to those of the first embodiment, and therefore description thereof will be omitted.

[0304] [Setting of illumination intensity in imaging section in first to third embodiments] Here, an example of setting the illumination intensity Lx in the imaging implementation section Ri in the first to third embodiments will be described with reference to Fig. 56 and Figs. 58 to 62. In the first and second embodiments, the preset portion of the predetermined street Ws1 corresponds to the imaging implementation section Ri in the third embodiment, and therefore the setting of the illumination intensity Lx in the imaging implementation section Ri also corresponds to the setting of the illumination intensity Lx in the preset portion. For convenience of explanation, the following description will be unified to the imaging implementation section Ri.

[0305] 56, as an example, the imaging implementation section Ri is set from the start point St1 of the predetermined street Ws1 in the Df direction to a point Ph just before the end point En, based on the processing section Rm (laser irradiation section) which is a section in which a modified layer Wm is formed on the predetermined street Ws1 by the laser L. The imaging implementation section Ri may be set by the user or automatically by the external control device 4100.

[0306] Also, the exposure time T x is set by dividing the imaging execution section Ri by the moving speed of the wafer W1 in the Df direction. As shown in FIGS. 58 to 62, the illumination intensity Lx of the panning image Gf is calculated by multiplying the predetermined illumination intensity L0 by the predetermined exposure time T0 and dividing the product by the exposure time Tx (illumination intensity Lx = "predetermined illumination intensity L0" x "predetermined exposure time T0" / "exposure time Tx"). The predetermined illumination intensity L0 and the predetermined exposure time T0 are the illumination intensity and illumination intensity set for a still image whose luminance value falls within the luminance value detectable range Rbr and whose range below the extraction threshold Tre falls within the non-defective product criterion width range Wcg. The predetermined illumination intensity L0, the predetermined exposure time T0, and the exposure time T x and illumination intensity L x Each of these is automatically set by the external control device 4100.

[0307] In the dicing apparatus 1 of the first and second embodiments and the dicing apparatus 401 of the third embodiment, the illumination intensity Lx in the imaging implementation section Ri is set by the above-described processing.

[0308] [Variations] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims, not by the description of the above embodiments, and further includes all modifications (variations) within the meaning and scope of the claims.

[0309] For example, in the first to third embodiments described above, the dicing control calculation unit 111 (3112) is configured to adjust the Y-direction movement amount of the chuck table unit 12 by an amount sufficient to correct the positional deviation when moving from the next street Ws to the next predetermined street Ws2 via the path R if the positional deviation amount falls within the warning range R31 or R32 during the first inspection on the next street Ws. However, the present invention is not limited to this. In the present invention, the Y-direction movement amount of the chuck table unit may be adjusted before processing the next street, depending on the processing speed of the dicing control calculation unit or the length of the path from the current street to the next street. Alternatively, the Y-direction movement amount of the chuck table unit may be adjusted after the next street is processed.

[0310] In the first to third embodiments described above, an example was shown in which the dicing control calculation unit 111 (3112) is configured to perform control to set a second inspection for a street Ws that has been identified as defective in the inspection result of the first inspection on the plurality of streets Ws, but the present invention is not limited to this. In the present invention, the control unit may be configured to perform control to set a second inspection for an inspection point that has been identified as defective in the inspection result of the first inspection on a plurality of inspection points set on each of the plurality of streets.

[0311] In the first to third embodiments, the second inspection is performed on streets Ws that are identified as defective in the first inspection among multiple intersections Cr between cracks Wc on the wafer W1, but the present invention is not limited to this. In the present invention, the second inspection may be performed on all intersections.

[0312] In the first to third embodiments, the imaging unit 14 includes the high-resolution infrared camera 14a and the wide-angle camera 14b, but the present invention is not limited to this. In the present invention, the imaging unit may include a visible light camera in addition to the high-resolution infrared camera and the wide-angle camera.

[0313] In the first to third embodiments, the imaging unit 14 captures a panning image Gf in a predetermined portion of the street Ws, but the present invention is not limited to this. In the present invention, the imaging unit may capture a plurality of stop-motion images by releasing the shutter a plurality of times in a predetermined portion of the street.

[0314] In the first to third embodiments, the second inspection is performed after the modified layer Wm is formed on the wafer W1, but the present invention is not limited to this. In the present invention, the second inspection may be performed while the modified layer Wm is being formed on the wafer W1.

[0315] In the first to third embodiments, an example was shown in which the discrimination frame Ae was superimposed on a portion of the crack Wc on the left side of the intersection image Gc, but the present invention is not limited to this. In the present invention, multiple discrimination frames may be arranged to align with portions of four cracks on the left, right, upper, and lower sides of the intersection image, as shown in Fig. 51. Alternatively, one discrimination frame may be arranged to align with the center of the crack in the intersection image, as shown in Fig. 52. Alternatively, multiple discrimination frames may be arranged to overlap each other.

[0316] Furthermore, in the third embodiment described above, the dicing control calculation unit 4111 (control unit) is configured to perform image processing based on the acquired imaging conditions to amplify the average brightness value Ba (brightness value) included in the panning image Gf captured by the high-resolution camera 14a (first imaging unit) at the predetermined street Ws1 when the imaging implementation section Ri when the high-resolution camera 14a (first imaging unit) is extended to capture an image of the crack Wc is at a distance that makes it impossible to set an exposure time and illumination intensity that allows the crack Wc to be recognized in the panning image Gf. However, the present invention is not limited to this. In the present invention, the control unit does not need to capture an image of the crack by the first imaging unit when the imaging implementation section Ri when the high-resolution camera 14a (first imaging unit) is extended to capture an image of the crack Wc at the predetermined street Ws1 is at a distance that makes it impossible to set an exposure time and illumination intensity that allows the crack Wc to be recognized in the panning image Gf.

[0317] In the first and second embodiments, the dicing control calculation unit 111 (3112) (control unit) is configured to control the illumination intensity for the first inspection based on the exposure time for the first inspection and the exposure time and illumination intensity for the second inspection. However, the present invention is not limited to this. In the present invention, when a modified layer is formed on the wafer and cracks caused by the modified layer are imaged by the first imaging unit, the control unit may be configured to control the first imaging unit to continue exposing to light at an illumination intensity and for an exposure time set to match the value obtained by multiplying a predetermined illumination intensity and a predetermined exposure time at which cracks can be recognized. This allows for reliable acquisition of an image in which cracks can be recognized, even when the first imaging unit is continuously exposed to light.

[0318] Furthermore, in the first and second embodiments described above, the dicing control calculation unit 111 (3112) (control unit) is configured to control the acquisition of the illumination intensity for the first inspection based on the exposure time for the first inspection and the exposure time and illumination intensity for the second inspection. However, the present invention is not limited to this. In the present invention, when a modified layer is formed on the wafer and cracks on the surface of the wafer facing the first imaging unit, which are generated by the modified layer, are imaged by the first imaging unit, the control unit may be configured to control the first imaging unit to continuously expose and acquire a panning image based on the illumination intensity and exposure time of the first imaging unit, which are set to match the value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the cracks can be recognized. This allows the cracks to be clearly displayed in the panning image acquired by continuously exposing the first imaging unit, thereby enabling the control unit to reliably recognize the cracks.

[0319] In addition, in the above third embodiment, an example was shown in which the dicing control calculation unit 4111 (control unit) is configured to stop the imaging of the crack Wc by the high-resolution camera 14a (first imaging unit) and control the camera 4111 to move to the next street Ws where a modified layer Wm will be formed when the length L1 of the specified street Ws1 in the Df direction (processing direction) is longer than the distance between the focal position Fp of the laser L and the optical center Po of the high-resolution camera 14a (first imaging unit), and in a preset imaging implementation section Ri in which the imaging of the crack Wc by the high-resolution camera 14a (first imaging unit) is not set to be extended, but the present invention is not limited to this. In the present invention, even if the length of a specified street in the processing direction is longer than the distance between the laser focal position and the optical center of the first imaging unit, an extension of the imaging of the crack by the first imaging unit may be set to expand the range of imaging of the crack by the first imaging unit.

[0320] Furthermore, in the above first to third embodiments, for convenience of explanation, an example has been shown in which the control processing of the dicing control calculation unit 111 (3112, 4111) is explained using a flow-driven flowchart in which processing is performed sequentially according to a processing flow, but the present invention is not limited to this. In the present invention, the control processing of the control unit may be performed by event-driven processing in which processing is performed on an event-by-event basis. In this case, the control processing may be performed completely event-driven, or may be performed by combining event-driven and flow-driven processing. [Explanation of symbols]

[0321] 1, 401 Dicing equipment 12 Chuck table part (table part) 13a Laser irradiation part 13b Mounting member 14a High-resolution camera (first imaging unit) 14b Wide-angle camera (second imaging unit) 111, 3112, 4111 Dicing control calculation unit B pixel Ba average luminance value Bg pixel group Bra crack brightness value En End (in the machining direction of a given street) Fp focal position Gf panning image L Laser L1, L2 Length (in the cutting direction of a given street) Pc Center position (position within the position range) Po optical center Ra position range (position range of crack brightness value) Ri Imaging section Rs Location range (location range of a given street) Th threshold W1 wafer Wc crack Wd width Wm modified layer West Street Ws1 designated street Ws2 designated street

Claims

1. a laser irradiation unit that irradiates a laser in a processing direction extending along each of a plurality of streets of the wafer to form a modified layer in the wafer; a first imaging unit capable of imaging the wafer after the modified layer is formed; a common mounting member to which both the laser irradiation unit and the first imaging unit are attached; A dicing apparatus comprising: a control unit that, when, after the modified layer is formed on the wafer, the first imaging unit images a crack caused by the modified layer, controls the first imaging unit to continue exposing the first imaging unit to an illumination intensity and exposure time that is set to match the value obtained by multiplying a predetermined illumination intensity at which the crack can be recognized by a predetermined exposure time.

2. A laser irradiation unit that forms a modified layer in the wafer by irradiating a laser in a processing direction extending along each of a plurality of streets of the wafer; a first imaging unit capable of imaging the wafer after the modified layer is formed; a common mounting member to which both the laser irradiation unit and the first imaging unit are attached, The mounting member is arranged in a state where its position is fixed in the horizontal direction and the vertical direction, the laser irradiation unit and the first imaging unit are attached to the attachment member in a state where their positions are fixed in a horizontal direction, a table portion that moves the wafer in the processing direction while holding the wafer; the first imaging unit, while being fixed in position in a horizontal direction, images the wafer after the modified layer has been formed on the wafer by the laser irradiated from the laser irradiation unit, while moving the wafer in the processing direction by the table unit; The dicing apparatus further includes a control unit that controls the first imaging unit to continue exposing the wafer to an illumination intensity and exposure time set to match the value obtained by multiplying a predetermined illumination intensity at which the crack can be recognized by a predetermined exposure time, while moving the wafer held on the table unit in the processing direction relative to the first imaging unit, which is fixed in position by the mounting member, when the crack caused by the modified layer is imaged by the first imaging unit after the modified layer has been formed on the wafer.

3. A laser irradiation unit that forms a modified layer in the wafer by irradiating a laser in a processing direction extending along each of a plurality of streets of the wafer; a first imaging unit capable of imaging the wafer after the modified layer is formed; a common mounting member to which both the laser irradiation unit and the first imaging unit are attached, The dicing apparatus further includes a control unit that controls the first imaging unit to continuously expose a predetermined portion of a predetermined street to light to create a panning image while forming the modified layer on the wafer with the laser along the processing direction on the predetermined street among the plurality of streets.

4. A laser irradiation unit that forms a modified layer in the wafer by irradiating a laser in a processing direction extending along each of a plurality of streets of the wafer; a first imaging unit capable of imaging the wafer after the modified layer is formed; a common mounting member to which both the laser irradiation unit and the first imaging unit are attached, The dicing device further includes a control unit that controls the first imaging unit to continuously expose the first imaging unit to a predetermined portion of the specified street while forming the modified layer on the wafer with the laser along the processing direction on a specified street among the plurality of streets, thereby capturing a panning image of cracks on the surface of the wafer on the side of the first imaging unit that are caused by the modified layer.

5. The mounting member is disposed in a state where its position is fixed in the horizontal direction and the vertical direction, 5. The dicing device according to claim 1, wherein the laser irradiation unit and the first imaging unit are attached to the attachment member in a state where their positions are fixed in the horizontal direction.

6. a table portion that moves the wafer in the processing direction while holding the wafer; 6. The dicing device of claim 5, wherein the first imaging unit is fixed in position in the horizontal direction and moves the wafer in the processing direction using the table unit, while imaging the wafer after the modified layer has been formed on the wafer by the laser irradiated from the laser irradiation unit.

7. 3. The dicing device of claim 2, wherein the control unit is configured to control the first imaging unit to image the crack based on an imaging execution section by the first imaging unit, the specified exposure time, and the specified illumination intensity, which are set to further satisfy imaging conditions of exposing the first imaging unit to a portion of a specified street among the plurality of streets where the modified layer is formed by the laser, and not exposing the first imaging unit to a portion of the specified street where the modified layer is not formed by the laser.

8. The dicing device according to any one of claims 1 to 4, wherein the first imaging unit is attached to the mounting member together with the laser irradiation unit in a state in which, in a planar view, the focal position of the laser of the laser irradiation unit and the optical center of the first imaging unit are arranged side by side along the processing direction.

9. a second imaging unit attached to the attachment member together with the first imaging unit and the laser irradiation unit, and configured to capture an image of an alignment mark on the wafer; 5. The dicing device according to claim 1, wherein the first imaging unit has a higher resolution than the second imaging unit.

10. 4. The dicing device of claim 3, wherein the control unit is configured to control the first imaging unit to continuously expose the first imaging unit to acquire the panning image based on the illumination intensity and exposure time of the first imaging unit, which are set to match the value obtained by multiplying a predetermined illumination intensity and a predetermined exposure time at which the cracks can be recognized, when the control unit images cracks on the surface of the wafer facing the first imaging unit caused by the modified layer while forming the modified layer on the wafer.

11. The dicing device of claim 10, wherein the control unit is configured to control the first imaging unit to image the crack based on an imaging execution section by the first imaging unit, the specified exposure time, and the specified illumination intensity, which are set to further satisfy imaging conditions of exposing the first imaging unit to a portion of the specified street where the modified layer is formed by the laser, and not exposing the first imaging unit to a portion of the specified street where the modified layer is not formed by the laser.

12. 11. The dicing device of claim 10, wherein the control unit is configured to control acquisition of illumination intensity for imaging a predetermined portion of the predetermined street with the first imaging unit while forming the modified layer on the wafer by irradiating the laser along the processing direction, based on a predetermined exposure time for the first imaging unit to image a predetermined portion of the predetermined street with the first imaging unit while forming the modified layer on the wafer by irradiating the laser along the processing direction, and a predetermined exposure time and illumination intensity for the first imaging unit to inspect the cracks formed by the modified layer after forming the modified layer on all of the plurality of streets.

13. The control unit is configured to control the execution of a first inspection to inspect whether the processing of the modified layer by the laser is defective based on a plurality of average brightness values ​​obtained for each pixel group by averaging the brightness values ​​of each of a plurality of pixels included in a plurality of pixel groups of the panning image in which pixel groups including a plurality of pixels arranged in the processing direction are arranged in a direction perpendicular to the processing direction. The dicing device of claim 12, wherein the control unit is configured to control the execution of a first inspection to inspect whether the processing of the modified layer by the laser is defective based on a plurality of average brightness values ​​obtained for each pixel group by averaging the brightness values ​​of each of a plurality of pixels included in a plurality of pixel groups of the panning image in which a plurality of pixels including a plurality of pixels arranged in the processing direction are arranged in a direction perpendicular to the processing direction.

14. The dicing apparatus of claim 13, wherein the control unit is configured to control acquisition of multiple crack brightness values ​​that are greater than or equal to a threshold value and a position range in a direction perpendicular to the processing direction of multiple pixel groups that have the multiple crack brightness values, based on an average brightness value of the position range of the specified street among the multiple average brightness values ​​and a preset threshold value.

15. The dicing apparatus of claim 14, wherein the control unit is configured to control the first inspection by acquiring the amount of positional deviation of the crack formed by the modified layer based on the difference between the position within the position range of the multiple crack brightness values ​​and a predetermined reference position.

16. The dicing apparatus of claim 15, wherein the control unit is configured to control correction of the positional shift of the focal position of the laser in a direction perpendicular to the processing direction based on the positional shift amount before processing the modified layer with the laser on a street after the next street of the specified street for which the multiple average brightness values ​​were obtained.

17. The dicing apparatus of claim 14, wherein the control unit is configured to control the execution of the first inspection, which inspects whether the cracks formed by the modified layer are appropriate as the first inspection, based on at least one of a comparison between the average value of the plurality of crack brightness values ​​and a predetermined standard average brightness value range, and a comparison between the width as the position range of the plurality of crack brightness values ​​and a predetermined standard width range.

18. 15. The dicing device according to claim 14, wherein the control unit is configured to perform control to notify an operator when the inspection result of the first inspection based on the plurality of crack brightness values ​​is bad.

19. 14. The dicing device of claim 13, wherein the device is configured to set a second inspection to perform a re-inspection to determine whether the cracks formed by the modified layer are defective after the modified layer is formed on all of the plurality of streets of the wafer, based on an inspection result of the first inspection for the plurality of streets that indicates that the processing of the modified layer is defective.

20. forming a modified layer in a wafer by irradiating a laser from a laser irradiation unit in a processing direction extending along each of a plurality of streets of the wafer provided with a plurality of semiconductor chips; taking an image of the wafer after the modified layer has been formed by an imaging unit attached to a mounting member common to the laser irradiation unit; and dividing the wafer into the plurality of semiconductor chips along dividing lines formed by expanding an expandable sheet member with an expanding section, A method for manufacturing a semiconductor chip, wherein the imaging step includes, when imaging a crack caused by the modified layer after the modified layer is formed on the wafer with the imaging unit, continuing to expose the imaging unit to an illumination intensity and exposure time that is set to match the value obtained by multiplying a predetermined illumination intensity at which the crack can be recognized by a predetermined exposure time.

21. A semiconductor chip manufactured by a dicing device comprising: a laser irradiation unit that forms a modified layer in a wafer by irradiating a laser in a processing direction extending along each of a plurality of streets of a wafer having a plurality of semiconductor chips provided thereon; an imaging unit that can image the wafer after the modified layer has been formed; a common mounting member to which both the laser irradiation unit and the imaging unit are attached; and a control unit that controls the imaging unit to continue exposing to an illumination intensity and for an exposure time that is set to match the value obtained by multiplying a predetermined illumination intensity by a predetermined exposure time at which the cracks can be recognized when the imaging unit images a crack caused by the modified layer after the modified layer has been formed on the wafer.

22. 5. The dicing apparatus of claim 4, wherein the control unit is configured to control the first imaging unit to continuously expose the first imaging unit to light and capture the panning image based on an illumination intensity and exposure time of the first imaging unit that are set to match a value obtained by multiplying a predetermined illumination intensity and a predetermined exposure time at which the cracks on the surface of the wafer on the side of the first imaging unit caused by the modified layer are imaged by the first imaging unit while the modified layer is being formed on the wafer.

23. a table portion that moves the wafer in the processing direction while holding the wafer; The mounting member is disposed in a state where its position is fixed in the horizontal direction and the vertical direction, 4. The dicing device of claim 3, wherein the control unit is configured to control the first imaging unit to continuously expose the first imaging unit to light at the specified street while forming the modified layer on the wafer with the laser at the specified street by moving the wafer held on the table unit in the processing direction relative to the first imaging unit, which is fixed in position by the mounting member, and to capture the panning image with the first imaging unit.

24. the first imaging unit is attached to the attachment member together with the laser irradiation unit in a state in which a focal position of the laser of the laser irradiation unit and an optical center of the first imaging unit are arranged side by side along the processing direction in a plan view, 5. The dicing apparatus of claim 4, wherein the control unit is configured to control the wafer to move relative to the laser irradiation unit and the first imaging unit in the processing direction so that the focal position of the laser reaches the end of the specified street in the processing direction, and then continue the relative movement of the wafer to extend the imaging of the crack by the first imaging unit and capture the panning image.

25. The dicing apparatus of claim 24, wherein the control unit is configured to control the imaging of the crack by the first imaging unit to extend the imaging of the crack and capture the panning image based on imaging conditions having information on the imaging implementation section based on the larger of a first distance based on the minimum exposure time of the first imaging unit and a second distance based on the maximum illumination intensity of the first imaging unit.

26. The dicing device of claim 24, wherein the control unit is configured to perform image processing to amplify the brightness value contained in the panning image captured by the first imaging unit at the specified street when the imaging section when the crack is imaged by the first imaging unit at the specified street is a distance that does not allow the exposure time and illumination intensity to be set so that the crack can be recognized in the panning image.

27. The dicing device of claim 24, wherein the control unit is configured to stop imaging of the crack by the first imaging unit when the focal position of the laser reaches the end of the processing direction of the specified street in a predetermined imaging implementation section in which the imaging of the crack by the first imaging unit is not set, when the length of the processing direction of the specified street is longer than the distance between the focal position of the laser and the optical center of the first imaging unit, and to control the first imaging unit to move to the next street on which the modified layer is formed.

28. The dicing device of claim 24, wherein the control unit is configured to control the extension of the imaging of the crack by the first imaging unit to capture the panning image by continuing the relative movement of the wafer after the focal position of the laser reaches the end of the processing direction of the specified street in a predetermined imaging implementation section in which the imaging of the crack by the first imaging unit is set when the length of the processing direction of the specified street is shorter than the distance between the focal position of the laser and the optical center of the first imaging unit.

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