Cleaning composition for removing resin masks

Abstract

To provide a cleaning agent composition for detaching a resin mask, the composition exhibiting excellent resin mask removal properties while suppressing damage to a resin substrate.SOLUTION: One embodiment of the present disclosure relates to a cleaning agent composition for detaching a resin mask, wherein the composition contains a quaternary ammonium hydroxide (component A), an amino alcohol (component B), an aromatic alcohol (component C) and water (component D), the mass ratio of the component D and the component C (D / C) being 10 or more.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a cleaning composition for removing resin masks and a method for producing electronic components using the same. [Background technology]

[0002] In recent years, personal computers and various electronic devices have become increasingly power-efficient, faster, and more compact, and the wiring on the package substrates and other components they are equipped with has been getting finer every year. Until now, metal masking has been the primary method used to form such fine wiring and connection terminals such as pillars and bumps, but due to its limited versatility and the difficulty of adapting to the miniaturization of wiring, new methods are being adopted.

[0003] One new method is to use a dry film resist as a thick resin mask instead of a metal mask. This resin mask is finally peeled off and removed, and alkaline stripping cleaners are used for this purpose.

[0004] As an alkaline stripping cleaner, for example, Patent Document 1 describes a dual-purpose cleaner that can simultaneously clean solder flux and dry film resist, characterized in that the amount of benzyl alcohol added is within the range of 5 to 94 wt %, the amount of amine compound is within the range of 1 to 50 wt %, and the amount of water is within the range of 3 to 90 wt % relative to the total amount. Patent Document 2 also describes a cleaning composition for resin mask layers that can both accelerate removal of resin mask layers after heat treatment of solder bumps and inhibit solder corrosion, thereby improving solder connection reliability. The cleaning composition contains, per 100 parts by mass, 0.5 to 3.0 parts by mass of a specific quaternary ammonium hydroxide, 3.0 to 10.0 parts by mass of a water-soluble amine, 0.3 to 2.5 parts by mass of an acid or its ammonium salt, and 50.0 to 95.0 parts by mass of water. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-224165 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-79244 Summary of the Invention [Problem to be solved by the invention]

[0006] When forming fine wiring on printed circuit boards and the like, a cleaning composition is required to have high cleaning performance to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in the solder and plating solution used in forming the fine wiring and bumps. Here, the resin mask is formed using a resist whose physical properties, such as solubility in a developer, change when exposed to light, electron beams, etc. Resists are broadly divided into negative and positive types based on how they react with light or electron beams. Negative resist has the property that its solubility in a developer decreases when exposed to light, and in a layer containing negative resist (hereinafter also referred to as a "negative resist layer"), the exposed portion is used as a resin mask after exposure and development processing. Positive resists have the property that their solubility in a developer increases when they are exposed to light, and after exposure and development, the exposed portions of a layer containing the positive resist (hereinafter also referred to as a "positive resist layer") are removed, and the unexposed portions are used as a resin mask. By using a resin mask with such properties, it is possible to form fine connections on a circuit board, such as metal wiring, metal pillars, and solder bumps.

[0007] However, as wiring becomes finer, it becomes more difficult to remove resin masks from minute gaps, and cleaning compositions are therefore required to have high resin mask removal properties. Meanwhile, miniaturization of wiring is progressing in order to reduce the size, processing speed, and power consumption of electronic devices. Narrowing the wiring width increases electrical resistance, which can generate heat and lead to performance degradation of electronic devices. To reduce electrical resistance without increasing the area of ​​the wiring substrate, measures are taken to increase the height of the wiring. Therefore, the resin mask used to form the wiring becomes thicker, increasing the contact area with the wiring. Furthermore, the wiring spacing also becomes narrower as the wiring becomes finer, making the resin mask more difficult to remove. In particular, high-energy, short-wavelength light is used to draw fine wiring. However, a thick resin mask increases the distance from the resin mask surface to the substrate, resulting in a difference in the reaction rate of photopolymerization due to exposure between the surface and the surface in contact with the substrate. This causes the surface reaction to proceed excessively. Unless the penetration ability is enhanced, the cleaning composition does not penetrate through the resin mask surface, making the resin mask difficult to remove. Furthermore, the technique of Patent Document 1 may cause damage to resins such as solder resists used in electronic circuit boards.

[0008] Therefore, the present disclosure provides a resin mask stripping cleaning composition that is excellent in resin mask removal properties while suppressing damage to the substrate resin, and a method for manufacturing electronic components using the same. [Means for solving the problem]

[0009] In one aspect, the present disclosure relates to a cleaning composition for removing resin masks, which contains a quaternary ammonium hydroxide (component A), an amino alcohol (component B), an aromatic alcohol (component C), and water (component D), and the mass ratio D / C of component D to component C is 10 or more.

[0010] In one aspect, the present disclosure relates to a cleaning method including a step of peeling a resin mask from an object to be cleaned to which the resin mask is attached, using the cleaning composition of the present disclosure, wherein the resin mask is a negative dry film resist that has been subjected to at least one of exposure and development.

[0011] In one aspect, the present disclosure relates to a method for producing electronic components, comprising a step of cleaning an electronic circuit board having a resin mask with the cleaning composition of the present disclosure.

[0012] In one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure for removing a resin mask from an object to which the resin mask is attached. [Effects of the Invention]

[0013] According to the present disclosure, it is possible to provide a cleaning composition for stripping resin masks that has excellent resin mask removability while suppressing damage to substrate resins, and a method for manufacturing electronic components using the same. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1A is a photograph showing an example of the appearance of a substrate to be cleaned, FIG. 1B is a photograph showing an example of the appearance of a substrate surface after cleaning with the cleaning compositions of Examples 1 and 2, and FIG. 1C is a photograph showing an example of the appearance of a substrate surface after cleaning with the cleaning composition of Comparative Example 1. DETAILED DESCRIPTION OF THE INVENTION

[0015] The present disclosure is based on the finding that a cleaning composition containing a specific alkaline compound and further containing water and an aromatic alcohol in a specific mass ratio can efficiently remove a resin mask from a substrate surface while suppressing damage to the substrate resin.

[0016] In one aspect, the present disclosure relates to a cleaning composition for removing resin masks (hereinafter also referred to as the "cleaning composition of the present disclosure"), which contains a quaternary ammonium hydroxide (component A), an amino alcohol (component B), an aromatic alcohol (component C), and water (component D), and the mass ratio of component D to component C (D / C) is 10 or more.

[0017] According to the present disclosure, a cleaning composition that has excellent resin mask removability and can suppress damage to substrate resins can be provided. Furthermore, by using the cleaning composition of the present disclosure to clean electronic components such as electronic circuit boards having resin masks, high-quality electronic components can be obtained with high yield.

[0018] Although the details of the mechanism of action by which the effects of the present disclosure are manifested are still unclear, it is presumed as follows. It is believed that the quaternary ammonium hydroxide (component A) and amino alcohol (component B) penetrate into the resin mask, promoting the dissociation of the alkali-soluble resin contained in the resin mask, and further promoting the peeling of the resin mask by causing the repulsion of the charges generated by the dissociation. Furthermore, because the quaternary ammonium hydroxide (component A) and amino alcohol (component B) have different penetration rates into the resin mask, it is believed that they suppress the rapid dissociation of the alkali-soluble resin on the surface of the resin mask, thereby suppressing the charge repulsion only on the surface of the resin mask, which inhibits penetration. On the other hand, aromatic alcohol (component C) penetrates into the resin mask together with quaternary ammonium hydroxide (component A) and amino alcohol (component B), promoting penetration and further enhancing the strippability of the alkali-soluble resin. Furthermore, aromatic alcohol (component C) can damage the resin used on the substrate if it penetrates it, but by increasing the proportion of water (component D), the dissolution of aromatic alcohol (component C) in the cleaning agent is dominant, which is thought to suppress penetration into the resin on the substrate. However, the present disclosure need not be construed as being limited to this mechanism.

[0019] In the present disclosure, a resin mask is a mask for protecting the surface of a material from treatments such as etching, plating, and heating, i.e., a mask that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development steps, a resist layer that has been subjected to at least one of exposure and development (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. In one or more embodiments, the resin material forming the resin mask may be a film-like photosensitive resin, a resist film, or a photoresist. A general-purpose resist film may be used.

[0020] [Quaternary ammonium hydroxide (component A)] The quaternary ammonium hydroxide (hereinafter also referred to as "Component A") contained in the cleaning composition of the present disclosure includes, for example, a quaternary ammonium hydroxide represented by the following formula (I): Component A may be one type, or two or more types may be combined. [ka]

[0021] In the above formula (I), R 1 , R 2 , R 3 and R 4 are each independently at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group, and a hydroxypropyl group.

[0022] The quaternary ammonium hydroxide represented by formula (I) is a salt consisting of a quaternary ammonium cation and hydroxide, and examples thereof include at least one selected from tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethylammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, diethylbis(2-hydroxyethyl)ammonium hydroxide, dipropylbis(2-hydroxyethyl)ammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)ethylammonium hydroxide, tris(2-hydroxyethyl)propylammonium hydroxide, tetrakis(2-hydroxyethyl)ammonium hydroxide, and tetrakis(2-hydroxypropyl)ammonium hydroxide. Among these, tetramethylammonium hydroxide (TMAH) is more preferable from the viewpoint of improving the removability of the resin mask.

[0023] From the viewpoint of improving resin mask removability, the content of Component A when using the cleaning composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1% by mass or more. From the same viewpoint, the content of Component A when using the cleaning composition of the present disclosure is preferably 0.1% by mass or more and 5% by mass or less, more preferably 0.5% by mass or more and 4% by mass or less, and even more preferably 1% by mass or more and 3% by mass or less ... When Component A is a combination of two or more types, the content of Component A refers to the total content of those types.

[0024] In the present disclosure, the "content of each component of the detergent composition at the time of use" refers to the content of each component at the time of cleaning, i.e., at the time when the detergent composition starts to be used for cleaning. In one or more embodiments, the content of each component in the cleaning composition of the present disclosure can be considered to be the blending amount of each component in the cleaning composition of the present disclosure.

[0025] [Amino alcohol (ingredient B)] The amino alcohol (alkanolamine) (hereinafter also referred to as "Component B") contained in the cleaning composition of the present disclosure includes, for example, a compound represented by the following formula (II): Component B may be one type, or two or more types may be combined. [ka]

[0026] In the above formula (II), R 5 represents a hydrogen atom, a methyl group, an ethyl group, or an aminoethyl group, and R 6 represents a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, or an ethyl group, and R 7 represents a hydroxyethyl group or a hydroxypropyl group.

[0027] Examples of component B include at least one selected from monoethanolamine (MEA), monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethylmonoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N-(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, and N-(β-aminoethyl)diisopropanolamine. Among these, monoethanolamine (MEA) is preferred from the viewpoint of improving resin mask removability.

[0028] From the viewpoint of improving resin mask removability, the content of component B when using the cleaning composition of the present disclosure is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, and even more preferably 4% by mass or more. From the same viewpoint, the content of component B when using the cleaning composition of the present disclosure is preferably 0.3% by mass or more and 30% by mass or less, more preferably 0.5% by mass or more and 15% by mass or less, even more preferably 1% by mass or more and 10% by mass or less, and even more preferably 4% by mass or more and 8% by mass or less ... When component B is a combination of two or more types, the content of component B refers to the total content of those components.

[0029] [Aromatic alcohol (component C)] The aromatic alcohol (hereinafter also referred to as "Component C") contained in the cleaning composition of the present disclosure may be any compound having an aromatic ring and a hydroxyl group. From the viewpoint of improving resin mask removability, the aromatic alcohol preferably has 7 or more carbon atoms, and preferably 10 or less, more preferably 9 or less. Component C may be one type or a combination of two or more types.

[0030] Component C includes at least one selected from benzyl alcohol, phenethyl alcohol, 4-methylbenzyl alcohol, 4-ethylbenzyl alcohol, 2-phenyl-1-propanol, and 2-phenyl-2-propanol, and from the viewpoint of improving resin mask removability, benzyl alcohol is more preferred.

[0031] The content of component C in the cleaning composition of the present disclosure during use is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and even more preferably 1% by mass or more, from the viewpoint of improving resin mask removability, and is preferably 10% by mass or less, more preferably 9% by mass or less, and even more preferably 5% by mass or less, from the viewpoint of suppressing damage to the substrate resin. From the viewpoints of improving resin mask removability and suppressing damage to the substrate resin, the content of component C in the cleaning composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more and 10% by mass or less, more preferably 0.3% by mass or more and 9% by mass or less, and even more preferably 1% by mass or more and 5% by mass or less. When component C is a combination of two or more types, the content of component C refers to the total content of those components.

[0032] [Water (ingredient D)] In one or more embodiments, examples of water (hereinafter also referred to as "component D") contained in the cleaning composition of the present disclosure include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0033] The content of component D in the cleaning composition of the present disclosure can be the remainder excluding components A, B, C, and the optional components described below. Specifically, the content of component D when using the cleaning composition of the present disclosure is preferably 60% by mass or more, more preferably 70% by mass or more, and even more preferably 80% by mass or more, from the viewpoints of improving resin mask removability, reducing the burden on wastewater treatment, and suppressing damage to the substrate resin. Also, from the viewpoint of improving resin mask removability, the content of component D is preferably 99% by mass or less, more preferably 95% by mass or less, and even more preferably 90% by mass or less. From the same viewpoint, the content of component D when using the cleaning composition of the present disclosure is preferably 60% by mass or more and 99% by mass or less, more preferably 70% by mass or more and 95% by mass or less, and even more preferably 80% by mass or more and 90% by mass or less.

[0034] The mass ratio D / C of component D to component C during use of the cleaning composition of the present disclosure is 10 or more, preferably 15 or more, and more preferably 20 or more, from the viewpoint of improving resin mask removability and suppressing damage to the substrate resin, and from the same viewpoint, it is preferably 100 or less, more preferably 70 or less, and even more preferably 40 or less. From the same viewpoint, the mass ratio D / C in the cleaning composition of the present disclosure, in one or more embodiments, is preferably 10 or more and 100 or less, more preferably 15 or more and 70 or less, and even more preferably 20 or more and 40 or less. In one or more embodiments, the mass ratio D / C in the cleaning composition of the present disclosure is preferably 10 or more and 100 or less, more preferably 10 or more and 70 or less, and even more preferably 10 or more and 40 or less.

[0035] [Organic solvent (ingredient E)] In one or more embodiments, the cleaning composition of the present disclosure may further contain an organic solvent (hereinafter also referred to as "component E"). Component E may be one type, or two or more types may be combined. In one or more embodiments, Component E includes at least one organic solvent selected from glycol ethers and aromatic ketones. From the viewpoint of improving the removability of the resin mask, the glycol ether may be a compound having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms. Specific examples of glycol ethers include at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, and diethylene glycol diethyl ether. From the viewpoint of improving the removability of the resin mask, examples of the aromatic ketone include acetophenone.

[0036] When the cleaning composition of the present disclosure contains component E, the content of component E during use of the cleaning composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 1% by mass or more, and even more preferably 2% by mass or more, from the viewpoint of improving resin mask removability. Also, from the viewpoint of improving resin mask removability, the content of component E during use of the cleaning composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less, even more preferably 5% by mass or less, and even more preferably 4% by mass or less. From the same viewpoint, the content of component E during use of the cleaning composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less, even more preferably 1% by mass or more and 5% by mass or less, and even more preferably 2% by mass or more and 4% by mass or less. When component E is a combination of two or more types, the content of component E refers to the total content of those components.

[0037] [Other ingredients] The cleaning composition of the present disclosure may further contain other components as needed in addition to the above Components A to E. Examples of other components include components that can be used in ordinary cleaning agents, such as alkaline agents other than Components A and B, amines other than Component B, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, and antibacterial agents.

[0038] In one or more embodiments, the cleaning composition of the present disclosure may be substantially free of an acid or an ammonium salt thereof. The content of the acid or the ammonium salt thereof when the cleaning composition of the present disclosure is used may be, for example, less than 0.3% by mass.

[0039] From the viewpoint of improving resin mask removability, the pH of the cleaning composition of the present disclosure during use is preferably 12 or more, more preferably 12.5 or more, and even more preferably 13 or more. In the present disclosure, the "pH during use" refers to the pH at 25°C, which can be measured using a pH meter. Specifically, it can be measured by the method described in the Examples.

[0040] [Method of manufacturing the cleaning composition] In one or more embodiments, the cleaning composition of the present disclosure can be produced by blending the components A to D and, if necessary, the optional components described above (component E and other components) using a known method. For example, the cleaning composition of the present disclosure can be produced by blending at least the components A to D. Accordingly, the present disclosure relates to a method for producing a cleaning composition, which includes blending at least the components A to D. In the present disclosure, "blending" includes mixing the components A to D and, if necessary, the optional components described above simultaneously or in any order. In the method for producing a cleaning composition of the present disclosure, the preferred amount of each component to be blended can be the same as the preferred content of each component in the cleaning composition of the present disclosure described above.

[0041] The cleaning composition of the present disclosure may be prepared as a concentrate by reducing the amount of water (component D) to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. From the viewpoint of transportation and storage, the cleaning composition concentrate is preferably a concentrate diluted 3 times or more, and from the viewpoint of storage stability, it is preferably a concentrate diluted 30 times or less. The cleaning composition concentrate can be used by diluting it with water (component D) so that components A to D and optional components have the above-mentioned contents (i.e., contents at the time of cleaning) at the time of use. Furthermore, the cleaning composition concentrate can also be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" for a concentrated cleaning composition refers to the diluted state of the cleaning composition concentrate.

[0042] [Items to be cleaned] In one or more embodiments, the cleaning composition of the present disclosure can be used for cleaning an object to which a resin mask is attached. In one or more embodiments, the cleaning composition of the present disclosure can be used for removing the resin mask from an object to which the resin mask is attached. That is, in one aspect, the present disclosure relates to use of the cleaning composition of the present disclosure for removing the resin mask from an object to which the resin mask is attached. Examples of objects to be cleaned include electronic components and their manufacturing intermediates. Examples of electronic components include at least one component selected from printed circuit boards, wafers, and metal plates such as copper plates and aluminum plates. The manufacturing intermediates are intermediate products in the manufacturing process of electronic components, including intermediate products after resin mask treatment. In one or more embodiments, the object to be cleaned with a resin mask attached can be an electronic circuit board with a cured resin mask. For example, the object to be cleaned with a resin mask attached can be a glass epoxy multilayer substrate with a metal foil (e.g., copper foil) on its surface, with a cured resin mask on its surface. In one or more embodiments, the object to be cleaned with a resin mask attached thereto may be an electronic component having wiring, connection terminals, or the like formed on its surface by soldering using a resin mask or plating (copper plating, aluminum plating, nickel plating, etc.). Specifically, for example, a substrate may be exemplified, in which an uncured resin mask on the surface of a glass epoxy multilayer substrate is subjected to at least one of exposure and development curing treatments, the uncured resin mask is removed, and then a circuit pattern is formed by plating. A cured resin mask is present in the non-plated portions of the formed circuit pattern. From the viewpoint of removability of the cured resin mask, the width of the thin line portion formed by the plating treatment is preferably 1 μm or more, more preferably 5 μm or more, and preferably 50 μm or less, more preferably 30 μm or less. From the viewpoint of removability of the cured resin mask, the width of the cured resin mask in the non-plated portions (between the circuit patterns) is preferably 1 μm or more, more preferably 5 μm or more, and preferably 50 μm or less, more preferably 30 μm or less. Furthermore, from the viewpoint of achieving the effect of suppressing damage to the substrate resin, the electronic component may be a substrate having a resin on the surface, such as a substrate having a solder resist. Thus, in one aspect, the present disclosure relates to the use of the cleaning composition of the present disclosure as a cleaning agent in the manufacture of electronic components.

[0043] In one or more embodiments, the cleaning composition of the present disclosure can be suitably used for cleaning an object to which a resin mask or a resin mask that has been further plated and / or heated is attached, in terms of cleaning effect. The resin mask may be, for example, a negative resin mask or a positive resin mask. A negative resin mask is preferred in terms of making it easier to achieve the effects of the present disclosure. An example of a negative resin mask is a negative dry film resist that has been exposed and / or developed. In the present disclosure, a negative resin mask is formed using a negative resist, and an example of such a negative resist layer is an exposed and / or developed resin mask. In the present disclosure, a positive resin mask is formed using a positive resist, and an example of such a positive resist layer is an exposed and / or developed resin mask.

[0044] [Cleaning method] In one aspect, the present disclosure relates to a cleaning method (hereinafter also referred to as the "cleaning method of the present disclosure") that includes a step of peeling a resin mask from an object to be cleaned using a cleaning composition of the present disclosure, wherein the resin mask is a negative dry film resist that has been subjected to at least one of exposure and development. In one or more embodiments, the step of peeling the resin mask from the object to be cleaned in the cleaning method of the present disclosure includes contacting the object to be cleaned to which the resin mask is attached with the cleaning composition of the present disclosure. The cleaning method of the present disclosure can efficiently remove the resin mask while suppressing damage to the substrate resin. An example of the substrate resin is solder resist.

[0045] Examples of a method for peeling a resin mask from an object to be cleaned using the cleaning composition of the present disclosure, or a method for contacting an object to be cleaned with the cleaning composition of the present disclosure, include a method of contacting the object by immersing the object in a cleaning bath containing the cleaning composition, a method of contacting the object by spraying the cleaning composition (shower method), and an ultrasonic cleaning method in which ultrasonic waves are applied during immersion. The cleaning composition of the present disclosure can be used for cleaning as is without dilution. Examples of objects to be cleaned include the above-mentioned objects. The immersion time can be, for example, from 1 minute to 10 minutes, or even from 3 minutes to 6 minutes. The spray time can be, for example, from 1 minute to 10 minutes, or even from 3 minutes to 6 minutes.

[0046] In one or more embodiments, the cleaning method of the present disclosure may include a step of contacting an object to be cleaned with the cleaning composition, rinsing the object with water, and drying the object. Examples of the rinsing method include rinsing with running water. Examples of the drying method include air blow drying. In one or more embodiments, the cleaning method of the present disclosure may include a step of rinsing the object to be cleaned with water after contacting the object with the cleaning composition.

[0047] In the cleaning method of the present disclosure, ultrasonic waves are preferably applied when the cleaning composition of the present disclosure comes into contact with the object to be cleaned, since the cleaning power of the cleaning composition of the present disclosure can be easily exerted, and the ultrasonic waves are more preferably relatively high frequency. From the same viewpoint, the ultrasonic irradiation conditions are, for example, preferably 26 to 72 kHz and 80 to 1500 W, more preferably 36 to 72 kHz and 80 to 1500 W.

[0048] In the cleaning method of the present disclosure, the temperature of the cleaning composition is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of making it easier for the cleaning power of the cleaning composition of the present disclosure to be exerted, and is preferably 70°C or lower, more preferably 60°C or lower, from the viewpoint of reducing the effect on organic resin-containing substrates.

[0049] [Electronic component manufacturing method] In one aspect, the present disclosure relates to a method for producing electronic components, the method comprising the step of removing a resin mask from an object to be cleaned using the cleaning composition of the present disclosure. In another aspect, the present disclosure relates to a method for producing electronic components, comprising a step of cleaning an electronic circuit board having a resin mask with the cleaning composition of the present disclosure (hereinafter also referred to as a "cleaning step"). The cleaning method in the cleaning step can be the same as the cleaning method of the present disclosure described above. According to the method for producing electronic components of the present disclosure, by performing cleaning using the cleaning composition of the present disclosure, the resin mask attached to the electronic components can be effectively removed, thereby enabling the production of highly reliable electronic components.

[0050] [kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the cleaning method of the present disclosure or the method for producing electronic components of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the cleaning composition of the present disclosure. The kit of the present disclosure makes it possible to obtain a cleaning composition that is excellent in resin mask removal ability while suppressing damage to the substrate resin.

[0051] One embodiment of the kit of the present disclosure is a kit (three-liquid cleaning composition) that contains a solution containing component A (first liquid), a solution containing component B (second liquid), and a solution containing component C (third liquid) in a mutually unmixed state, and at least one selected from the first, second, and third liquids further contains part or all of component D (water), and the first, second, and third liquids are mixed at the time of use. After the first, second, and third liquids are mixed, they may be diluted with water (component D) as needed. Each of the first, second, and third liquids may contain the optional components described above as needed. Another embodiment of the kit of the present disclosure is a kit (two-liquid detergent composition) that contains a solution (first liquid) containing components A and B and a solution (second liquid) containing component C, which are not mixed with each other, and at least one of the first and second liquids further contains part or all of component D (water), and the first and second liquids are mixed at the time of use. After the first and second liquids are mixed, they may be diluted with component D (water) as needed. Each of the first and second liquids may contain the optional components described above as needed. [Example]

[0052] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0053] 1. Preparation of cleaning compositions of Examples 1 to 6 and Comparative Examples 1 to 7 The cleaning compositions of Examples 1 to 6 and Comparative Examples 1 to 7 were prepared by blending the components shown in Tables 1 and 2 in the amounts (mass %, active ingredient) shown in Tables 1 and 2 and mixing them by stirring. The pH of each cleaning composition at 25°C shown in Tables 1 and 2 was measured using a pH meter (HM-30G, Toa Dempa Kogyo Co., Ltd.), and the value was measured 3 minutes after the pH meter electrode was immersed in the cleaning composition.

[0054] The cleaning compositions of Examples 1 to 6 and Comparative Examples 1 to 7 were prepared using the following materials. (Component A) TMAH: Tetramethylammonium hydroxide [Showa Denko K.K., concentration 25%] (Non-ingredient A) KOH: Potassium hydroxide [Fujifilm Wako Pure Chemical Corporation] (Component B) MEA: Monoethanolamine [Fujifilm Wako Pure Chemical Industries, Ltd., special grade] (Component C) Benzyl alcohol [Fujifilm Wako Pure Chemical Industries, Ltd., special grade] (Component D) Water [purified to less than 1 μS / cm using the Organo Corporation G-10DSTSET water purification system] (Component E) BDG: Butyl diglycol [Nihon Nyukazai Co., Ltd., diethylene glycol monobutyl ether]

[0055] 2. Evaluation of the cleaning compositions of Examples 1 to 2 and Comparative Examples 1 to 3 and 5 to 7 The prepared cleaning compositions of Examples 1 to 2 and Comparative Examples 1 to 3 and 5 to 7 were evaluated as follows.

[0056] [Cleaning test method] 2 kg of each of the cleaning compositions from Examples 1 and 2 and Comparative Examples 1 to 3 and 5 to 7 was added to a 3-L beaker and heated to 55°C. Test pieces were sprayed for 3 minutes (pressure: 0.15 MPa, spray distance: 10 cm) while circulating the composition using a box-type spray washer equipped with a single-fluid nozzle (fan-shaped) VVP9060 (manufactured by Ikeuchi Co., Ltd.). The test pieces were then rinsed by immersing them in a rinsing tank containing 1 kg of water in a 1-L glass beaker, and then dried with nitrogen blow. Using an optical microscope "Digital Microscope VHX-2000" (manufactured by Keyence Corporation), the presence or absence of resin mask remaining on the thin line portion of the test piece after the cleaning test was visually observed at 300x magnification to check for the presence or absence of residue. The results are shown in Table 1. The test piece was 120mm x 120mm in size and had a copper-plated fine-line circuit pattern on the surface of a glass epoxy multilayer substrate, with a resin mask made of a cured negative dry film resist between the copper fine-line circuit patterns, the pattern thickness was 50μm, and the fine-line width was 20μm.An acrylic resin solder resist was also applied to the backside of the substrate.

[0057] An example of a photograph of the appearance of a substrate before cleaning is shown in Figure 1A. The substrate shown in Figure 1A is a glass epoxy substrate with a copper-plated pillar pattern (pillar diameter: 200 μm, pitch: 400 μm), and dry film resist is present in areas other than the pillar pattern. When the substrate shown in Fig. 1A was cleaned with the cleaning composition of Comparative Example 1, the appearance of the substrate surface after cleaning was observed, revealing resist residues all over the surface, as shown in Fig. 1C. On the other hand, when the substrate was cleaned with the cleaning compositions of Examples 1 and 2, the appearance of the substrate surface after cleaning was observed, revealing no resist residues, as shown in Fig. 1B, demonstrating that the resin mask was efficiently removed.

[0058] [Evaluation of damage to board resin] The test pieces were immersed in 1 kg of each cleaning composition at 55°C for 10 minutes, and the appearance of the solder resist part of the test piece was visually inspected before and after the immersion, and evaluated as follows. The results are shown in Table 1. <Evaluation criteria> No resin damage: No change observed. Resin damage: Changes are visible.

[0059] [Table 1]

[0060] As shown in Table 1, the cleaning compositions of Examples 1 and 2 were superior in resin mask removal ability while suppressing damage to the substrate resin, compared to Comparative Examples 1 and 6, which did not contain Component C, Comparative Examples 2 and 3, which did not contain Component A and had a D / C mass ratio of less than 10, Comparative Example 5, which did not contain Component A, and Comparative Example 7, which had a D / C mass ratio of less than 10.

[0061] 3. Evaluation of the cleaning compositions of Examples 3 to 6 and Comparative Example 4 The prepared cleaning compositions of Examples 3 to 6 and Comparative Example 4 were evaluated as follows. [Cleaning test method] 200 g of each of the cleaning compositions of Examples 3 to 6 and Comparative Example 4 was added to a 200 mL glass beaker, heated to 60°C in a warm bath, and a test piece was immersed in the beaker without stirring. After immersion in each cleaning composition, the time until the resin mask on the surface of the test piece was completely removed visually from the test piece (peeling time) was measured. The results are shown in Table 2. In Table 2, if the resin mask was not completely removed even after 3 minutes of immersion, it was recorded as "not peeled." The test piece was a 35 mm x 35 mm solid pattern board made by pasting a negative dry film resin mask on the surface of a glass epoxy multilayer board with copper foil on the surface and then exposing and curing the resin mask.

[0062] [Table 2]

[0063] As shown in Table 2, it was found that the cleaning compositions of Examples 3 to 6 were superior to Comparative Example 4, which did not contain Component B, in resin mask removal ability. [Industrial Applicability]

[0064] According to the present disclosure, a cleaning composition that is excellent in resin mask removal while suppressing damage to substrate resin can be provided. Furthermore, use of the cleaning composition of the present disclosure can improve the performance and reliability of manufactured electronic components, thereby improving the productivity of semiconductor devices.

Claims

1. Contains a quaternary ammonium hydroxide (component A), an amino alcohol (component B), an aromatic alcohol (component C), and water (component D), Component C is at least one selected from benzyl alcohol, phenethyl alcohol, 4-methylbenzyl alcohol, 4-ethylbenzyl alcohol, 2-phenyl-1-propanol, and 2-phenyl-2-propanol; The content of the component D is 60% by mass or more, A cleaning composition for removing a resin mask, wherein the mass ratio D / C of component D to component C is 10 or more.

2. The cleaning composition according to claim 1, wherein the content of component C is 0.1% by mass or more and 10% by mass or less.

3. The cleaning composition according to claim 1 or 2, wherein the content of component B is 0.3% by mass or more and 30% by mass or less.

4. The cleaning composition according to claim 1 , wherein the content of component A is 0.1% by mass or more and 5% by mass or less.

5. 5. The cleaning composition according to claim 1, wherein component B is a compound represented by the following formula (II): 【Chemistry 1】 In the above formula (II), R ５ represents a hydrogen atom, a methyl group, an ethyl group, or an aminoethyl group, and R ６ represents a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group, or an ethyl group, and R ７ represents a hydroxyethyl group or a hydroxypropyl group.

6. 6. The cleaning composition according to claim 1, wherein the mass ratio D / C of component D to component C is 10 or more and 40 or less.

7. 7. The cleaning composition according to claim 1, further comprising at least one organic solvent (component E) selected from glycol ethers and aromatic ketones.

8. The cleaning composition according to claim 7, wherein the content of component E is 0.1% by mass or more and 10% by mass or less.

9. The cleaning composition according to claim 1 , which has a pH of 12 or higher.

10. A method for cleaning a cleaning object, comprising the step of removing a resin mask from the object to be cleaned using the cleaning composition according to any one of claims 1 to 9, A cleaning method in which the resin mask is a negative dry film resist that has been subjected to at least one of exposure and development.

11. The object to be cleaned with the resin mask attached has a circuit pattern formed by plating, 11. The cleaning method according to claim 10, wherein the line width of the thin line portion of the circuit pattern is 1 μm or more and 50 μm or less.

12. 12. The cleaning method according to claim 10, wherein the object to be cleaned is a glass epoxy multilayer substrate having a metal foil on its surface and a hardened resin mask on its surface.

13. A method for producing electronic components, comprising the step of cleaning an electronic circuit board having a resin mask with the cleaning composition according to any one of claims 1 to 9.

14. Use of the cleaning composition according to any one of claims 1 to 9 for removing a resin mask from an object to be cleaned to which the resin mask is attached.

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