magnetic sensor

Abstract

To provide a magnetic sensor which can be downsized.SOLUTION: A magnetic sensor 1 includes: a plurality of resistor sections each made up of a plurality of MR elements 50; and a plurality of protruding surfaces 305c each structured to cause the plurality of MR elements 50 to detect a specific component of a target magnetic field. The plurality of MR 50 elements are disposed dividedly in first to fourth areas A1 to A4 corresponding respectively to the plurality of resistor sections. The plurality of protruding surfaces 305c include a structural body extending across at least two of the first to fourth areas A1 to A4.SELECTED DRAWING: Figure 13

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor having a structure that allows a magnetoresistive element to detect a specific component of a target magnetic field. [Background technology]

[0002] In recent years, magnetic sensors using magnetoresistive elements have been used in a variety of applications. In systems including magnetic sensors, it is sometimes necessary to detect a magnetic field containing a component perpendicular to the surface of the substrate using a magnetoresistive element provided on a substrate. In this case, the magnetic field containing a component perpendicular to the surface of the substrate can be detected by providing a soft magnetic material that converts the magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or by placing the magnetoresistive element on an inclined surface formed on the substrate.

[0003] Here, two directions parallel to the surface of the substrate of the magnetic sensor and perpendicular to each other are defined as the X direction and the Y direction. Generally, in a magnetic sensor provided with multiple magnetoresistive effect elements, the multiple magnetoresistive effect elements are arranged in a lattice pattern along each of the X direction and the Y direction. The longitudinal direction of the magnetoresistive effect elements coincides with the X direction or the Y direction. Also, in a magnetic sensor provided with multiple soft magnetic bodies, the multiple magnetoresistive effect elements are arranged in groups so as to line up along each of the multiple soft magnetic bodies. Usually, the longitudinal direction of the magnetoresistive effect elements coincides with the longitudinal direction of the soft magnetic bodies.

[0004] Patent Document 1 describes a geomagnetic sensor having an X-axis magnetic sensor, a Y-axis magnetic sensor, and a Z-axis magnetic sensor mounted on a support. In this geomagnetic sensor, the Z-axis magnetic sensor includes a magnetoresistive element and a soft magnetic material. The soft magnetic material converts a vertical magnetic field component parallel to the Z axis into a horizontal magnetic field component perpendicular to the Z axis and applies this horizontal magnetic field component to the magnetoresistive element. The magnetoresistive element and the soft magnetic material each have a shape elongated in the Y-axis direction.

[0005] Patent Document 2 describes a current detection device provided with a plurality of magnetoresistive effect elements. In this current detection device, each of the plurality of magnetoresistive effect elements is arranged so that the longitudinal direction of the magnetoresistive effect element is inclined with respect to both the longitudinal direction and the width direction of the conductor. Furthermore, the plurality of magnetoresistive effect elements are arranged so as to be aligned along both the longitudinal direction and the width direction of the conductor. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2011 / 068146 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-1118 Summary of the Invention [Problem to be solved by the invention]

[0007] Here, in a magnetic sensor in which a plurality of magnetoresistive effect elements are arranged in a lattice pattern in a specific region, it is considered to provide a soft magnetic body as in the Z-axis sensor of Patent Document 1 while tilting the longitudinal direction of the magnetoresistive effect elements with respect to each of the X and Y directions, as in the plurality of magnetoresistive effect elements of Patent Document 2. In this case, the longitudinal direction of the soft magnetic body also needs to be tilted with respect to each of the X and Y directions. When the soft magnetic body is tilted in this way, wasted space is generated, resulting in a problem of an increased size of the magnetic sensor.

[0008] The above problem is not limited to magnetic sensors provided with a plurality of soft magnetic bodies, but also applies to magnetic sensors formed with a plurality of inclined surfaces.

[0009] The present invention has been made in consideration of such problems, and its purpose is to provide a magnetic sensor that has a structure that allows a magnetoresistive effect element to detect a specific component of a target magnetic field, and that can be made compact. [Means for solving the problem]

[0010] The magnetic sensor of the present invention includes a plurality of resistance sections formed by a plurality of magnetoresistive elements, and a plurality of structures each having a structure for causing the plurality of magnetoresistive elements to detect a specific component of a target magnetic field. The plurality of magnetoresistive elements are arranged in a plurality of regions corresponding to the plurality of resistance sections. The plurality of structures includes a structure extending across at least two of the plurality of regions. [Effects of the Invention]

[0011] In the magnetic sensor of the present invention, some structures extend across at least two regions, which makes it possible to realize a magnetic sensor that can be miniaturized. [Brief explanation of the drawings]

[0012] [Figure 1] 1 is a perspective view showing a magnetic sensor device including a magnetic sensor according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a plan view showing the magnetic sensor device shown in FIG. [Figure 3] FIG. 2 is a functional block diagram showing the configuration of the magnetic sensor device shown in FIG. [Figure 4] FIG. 2 is a circuit diagram showing a circuit configuration of a first detection circuit according to the first embodiment of the present invention. [Figure 5] FIG. 3 is a circuit diagram showing a circuit configuration of a second detection circuit in the first embodiment of the present invention. [Figure 6] FIG. 4 is a circuit diagram showing a circuit configuration of a third detection circuit in the first embodiment of the present invention. [Figure 7] FIG. 2 is a plan view showing a part of a first chip in the first embodiment of the present invention. [Figure 8] FIG. 2 is a cross-sectional view showing a part of a first chip in the first embodiment of the present invention. [Figure 9] FIG. 3 is a plan view showing a part of a second chip in the first embodiment of the present invention. [Figure 10] FIG. 3 is a cross-sectional view showing a part of a second chip in the first embodiment of the present invention. [Figure 11] 1 is a side view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 12] FIG. 1 is a plan view showing an element arrangement region in a first embodiment of the present invention. [Figure 13] FIG. 2 is a plan view showing a plurality of convex surfaces in the first embodiment of the present invention. [Figure 14] FIG. 3 is an explanatory diagram showing a convex surface, a first edge, and a fourth edge in the first embodiment of the present invention. [Figure 15] FIG. 3 is an explanatory diagram showing a plurality of magnetoresistive effect elements in a part of a first region in the first embodiment of the present invention. [Figure 16] FIG. 3 is a plan view showing a plurality of convex surfaces in the magnetic sensor of the first comparative example. [Figure 17] FIG. 10 is a plan view showing one convex surface in the magnetic sensor of the second comparative example. [Figure 18] FIG. 10 is a plan view showing a plurality of convex surfaces in a magnetic sensor of a third comparative example. [Figure 19] FIG. 10 is an explanatory diagram showing a plurality of magnetoresistive effect elements in a part of a first region in a magnetic sensor of a fourth comparative example. [Figure 20] FIG. 10 is a plan view showing an element arrangement region in a first modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 21] FIG. 10 is a plan view showing an element arrangement region in a second modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 22] FIG. 10 is a plan view showing a plurality of convex surfaces in a second embodiment of the present invention. [Figure 23] FIG. 10 is a plan view showing a plurality of convex surfaces in a third embodiment of the present invention. [Figure 24] FIG. 10 is a functional block diagram showing a configuration of a magnetic sensor device including a magnetic sensor according to a fourth embodiment of the present invention. [Figure 25]FIG. 10 is a circuit diagram showing a circuit configuration of a first detection circuit according to a fourth embodiment of the present invention. [Figure 26] FIG. 10 is a circuit diagram showing a circuit configuration of a second detection circuit according to a fourth embodiment of the present invention. [Figure 27] FIG. 10 is a circuit diagram showing a circuit configuration of a third detection circuit according to a fourth embodiment of the present invention. [Figure 28] FIG. 10 is a plan view showing a part of a magnetic sensor according to a fourth embodiment of the present invention. [Figure 29] FIG. 10 is a perspective view showing a plurality of magnetoresistive elements and a plurality of yokes according to a fourth embodiment of the present invention. [Figure 30] FIG. 10 is a side view showing a plurality of magnetoresistive elements and a plurality of yokes according to a fourth embodiment of the present invention. [Figure 31] FIG. 10 is a plan view showing a plurality of yokes according to a fourth embodiment of the present invention. [Figure 32] FIG. 10 is a functional block diagram showing a configuration of a magnetic sensor device including a magnetic sensor according to a fifth embodiment of the present invention. [Figure 33] FIG. 13 is a circuit diagram showing a circuit configuration of a first detection circuit according to a fifth embodiment of the present invention. [Figure 34] FIG. 13 is a circuit diagram showing a circuit configuration of a second detection circuit according to a fifth embodiment of the present invention. [Figure 35] FIG. 13 is a plan view showing a part of a first chip according to a fifth embodiment of the present invention. [Figure 36] FIG. 13 is a cross-sectional view showing a part of a first chip in a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0013] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor device including a magnetic sensor according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a perspective view showing the magnetic sensor device 100. Fig. 2 is a plan view showing the magnetic sensor device 100. Fig. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100.

[0014] The magnetic sensor device 100 includes a magnetic sensor 1 according to this embodiment. The magnetic sensor 1 includes a first chip 2 and a second chip 3. The magnetic sensor device 100 further includes a support 4 that supports the first and second chips 2 and 3. The first chip 2, the second chip 3, and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a, which is its upper surface, a lower surface located opposite the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

[0015] Here, with reference to FIGS. 1 and 2, the reference coordinate system in this embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor device 100 and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, an X direction, a Y direction, and a Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to one another. In this embodiment, the direction perpendicular to the reference plane 4a of the support body 4 and the direction from the lower surface of the support body 4 toward the reference plane 4a is particularly defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes that define the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0016] Furthermore, a direction parallel to the X direction is defined as a first reference direction Rx, and a direction parallel to the Y direction is defined as a second reference direction Ry. The reference plane 4a is a plane parallel to the first reference direction Rx and the second reference direction Ry. In this embodiment, for convenience, the upper surface of the support body 4 is defined as the reference plane. However, the reference plane of the present invention is not limited to the upper surface of the support body 4, as long as it is a plane parallel to the first reference direction Rx and the second reference direction Ry.

[0017] Hereinafter, a position further in the Z direction than the reference position will be referred to as "above," and a position on the opposite side of "above" than the reference position will be referred to as "below." Furthermore, with regard to the components of the magnetic sensor device 100, the surface located at the end in the Z direction will be referred to as the "top surface," and the surface located at the end in the -Z direction will be referred to as the "bottom surface." Furthermore, the expression "when viewed from the Z direction" means that the object is viewed from a position away in the Z direction.

[0018] The first chip 2 has an upper surface 2a and a lower surface located opposite each other and four side surfaces connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located opposite each other and four side surfaces connecting the upper surface 3a and the lower surface.

[0019] The first chip 2 is mounted on the reference plane 4a with the bottom surface of the first chip 2 facing the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a with the bottom surface of the second chip 3 facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are bonded to the support 4 by, for example, adhesives 6 and 7, respectively.

[0020] The first chip 2 has a plurality of first electrode pads 21 provided on its upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on its upper surface 3a. The support 4 has a plurality of third electrode pads 41 provided on its reference plane 4a. Although not shown, in the magnetic sensor device 100, of the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41, two corresponding electrode pads are connected to each other by bonding wires.

[0021] The magnetic sensor 1 includes a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30.

[0022] The magnetic sensor device 100 further includes a processor 40. The support 4 includes the processor 40. The first to third detection circuits 10, 20, and 30 are connected to the processor 40 via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads 41, and a plurality of bonding wires.

[0023] Each of the first to third detection circuits 10, 20, and 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In this embodiment, the plurality of magnetic detection elements are particularly a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0024] The processor 40 is configured to process the detection signals generated by the first to third detection circuits 10, 20, and 30 to generate first, second, and third detection values ​​corresponding to components of the magnetic field in three different directions at a predetermined reference position. In this embodiment, the three different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured, for example, by an application specific integrated circuit (ASIC).

[0025] Next, the first to third detection circuits 10, 20, 30 will be described with reference to FIGS. 3 to 10. FIG. 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. FIG. 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20. FIG. 6 is a circuit diagram showing the circuit configuration of the third detection circuit 30. FIG. 7 is a plan view showing a portion of the first chip 2. FIG. 8 is a cross-sectional view showing a portion of the first chip 2. FIG. 9 is a plan view showing a portion of the second chip 3. FIG. 10 is a cross-sectional view showing a portion of the second chip 3.

[0026] As shown in FIGS. 7 and 9, the U direction and V direction are defined as follows: The U direction is the direction rotated from the X direction toward the -Y direction. The V direction is the direction rotated from the Y direction toward the X direction. In this embodiment, the U direction is defined as the direction rotated by α from the X direction toward the -Y direction, and the V direction is defined as the direction rotated by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and smaller than 90°. In one example, α is 45°. The direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0027] As shown in FIG. 10, the W1 direction and the W2 direction are defined as follows: The W1 direction is the direction rotated from the V direction toward the -Z direction; the W2 direction is the direction rotated from the V direction toward the Z direction; in this embodiment, the W1 direction is defined as the direction rotated by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction rotated by β from the V direction toward the Z direction. Note that β is an angle greater than 0° and smaller than 90°. The direction opposite the W1 direction is defined as the -W1 direction, and the direction opposite the W2 direction is defined as the -W2 direction. The W1 direction and the W2 direction are each perpendicular to the U direction.

[0028] The first detection circuit 10 is configured to detect a component of the target magnetic field parallel to the U direction and generate at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect a component of the target magnetic field parallel to the W1 direction and generate at least one second detection signal corresponding to this component. The third detection circuit 30 is configured to detect a component of the target magnetic field parallel to the W2 direction and generate at least one third detection signal corresponding to this component.

[0029] 4, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor unit R11, a second resistor unit R12, a third resistor unit R13, and a fourth resistor unit R14. The multiple MR elements of the first detection circuit 10 constitute the first to fourth resistor units R11, R12, R13, and R14.

[0030] The first resistor R11 is provided between the power supply terminal V1 and the signal output terminal E11. The second resistor R12 is provided between the signal output terminal E11 and the ground terminal G1. The third resistor R13 is provided between the signal output terminal E12 and the ground terminal G1. The fourth resistor R14 is provided between the power supply terminal V1 and the signal output terminal E12.

[0031] 5, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor unit R21, a second resistor unit R22, a third resistor unit R23, and a fourth resistor unit R24. The multiple MR elements of the second detection circuit 20 constitute the first to fourth resistor units R21, R22, R23, and R24.

[0032] The first resistor R21 is provided between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is provided between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is provided between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is provided between the power supply terminal V2 and the signal output terminal E22.

[0033] 6, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor unit R31, a second resistor unit R32, a third resistor unit R33, and a fourth resistor unit R34. The multiple MR elements of the third detection circuit 30 constitute the first to fourth resistor units R31, R32, R33, and R34.

[0034] The first resistor R31 is provided between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is provided between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is provided between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is provided between the power supply terminal V3 and the signal output terminal E32.

[0035] A voltage or current of a predetermined magnitude is applied to each of the power supply terminals V1 to V3, and each of the ground terminals G1 to G3 is connected to the ground.

[0036] Hereinafter, the multiple MR elements of the first detection circuit 10 will be referred to as multiple first MR elements 50A, the multiple MR elements of the second detection circuit 20 will be referred to as multiple second MR elements 50B, and the multiple MR elements of the third detection circuit 30 will be referred to as multiple third MR elements 50C. Because the first to third detection circuits 10, 20, and 30 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. In addition, any MR element will be represented by the symbol 50.

[0037] FIG. 11 is a side view showing an MR element 50. The MR element 50 may be a spin-valve type MR element or an AMR (anisotropic magnetoresistance) element. In this embodiment, the MR element 50 is a spin-valve type MR element. The MR element 50 includes a magnetization pinned layer 52 having a fixed magnetization direction, a free layer 54 having a magnetization direction that can change depending on the direction of a target magnetic field, and a gap layer 53 disposed between the magnetization pinned layer 52 and the free layer 54. The MR element 50 may be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a nonmagnetic conductive layer. In the MR element 50, the resistance value changes depending on the angle that the magnetization direction of the free layer 54 makes with respect to the magnetization direction of the magnetization fixed layer 52, with the resistance value being minimum when this angle is 0° and maximum when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy in which the direction of the easy axis of magnetization is perpendicular to the direction of magnetization of the magnetization fixed layer 52. Note that a magnet that applies a bias magnetic field to the free layer 54 can also be used as a means for setting the easy axis of magnetization in a predetermined direction in the free layer 54.

[0038] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization pinned layer 52, the gap layer 53, and the free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization pinned layer 52 to pin the magnetization direction of the magnetization pinned layer 52. The magnetization pinned layer 52 may be a so-called self-pinned type pinned layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type pinned layer has a synthetic ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization pinned layer 52 is a self-pinned type pinned layer, the antiferromagnetic layer 51 may be omitted.

[0039] The layers 51 to 54 in the MR element 50 may be arranged upside down relative to the arrangement shown in FIG.

[0040] 4 to 6, the solid arrows represent the magnetization direction of the magnetization fixed layer 52 of the MR element 50. The open arrows represent the magnetization direction of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0041] In the example shown in FIG. 4, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistor units R11 and R13 is the U direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistor units R12 and R14 is the −U direction. The free layer 54 of each of the multiple first MR elements 50A has shape anisotropy in which the magnetization easy axis direction is parallel to the V direction. When no target magnetic field is applied to the first MR element 50A, the magnetization direction of the free layer 54 in each of the first and second resistor units R11 and R12 is the V direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor units R13 and R14 is the −V direction.

[0042] In the example shown in FIG. 5, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistor units R21 and R23 is the W1 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistor units R22 and R24 is the −W1 direction. The free layer 54 of each of the second MR elements 50B has shape anisotropy in which the magnetization easy axis direction is parallel to the U direction. When no target magnetic field is applied to the second MR element 50B, the magnetization direction of the free layer 54 in each of the first and second resistor units R21 and R22 is the U direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor units R23 and R24 is the −U direction.

[0043] In the example shown in FIG. 6, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistor units R31 and R33 is the W2 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistor units R32 and R34 is the −W2 direction. The free layer 54 of each of the multiple third MR elements 50C has shape anisotropy in which the magnetization easy axis direction is parallel to the U direction. When no target magnetic field is applied to the third MR element 50C, the magnetization direction of the free layer 54 in each of the first and second resistor units R31 and R32 is the U direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor units R33 and R34 is the −U direction.

[0044] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to each of the free layers 54 of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C. In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in the predetermined direction to each of the free layers 54 of the first MR elements 50A, and a second coil 80 that applies a magnetic field in the predetermined direction to each of the free layers 54 of the plurality of second MR elements 50B and the plurality of third MR elements 50C. The first chip 2 includes the first coil 70. The second chip 3 includes the second coil 80.

[0045] The direction of magnetization of the magnetization fixed layer 52 and the direction of the easy axis of magnetization of the free layer 54 may be slightly deviated from the above-mentioned directions in terms of the accuracy of manufacturing the MR element 50. The magnetization of the magnetization fixed layer 52 may be configured to include a magnetization component whose main component is in the above-mentioned direction. In this case, the direction of magnetization of the magnetization fixed layer 52 is the above-mentioned direction or approximately the above-mentioned direction.

[0046] The following provides a detailed description of the specific structures of the first chip 2 and the second chip 3. Fig. 8 shows a part of the cross section taken along line 8-8 in Fig. 7.

[0047] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 207, 208, 209, and 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 71, and a plurality of upper coil elements 72. The upper surface 201a of the substrate 201 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 201a of the substrate 201. Note that a coil element is a part of a coil winding.

[0048] An insulating layer 202 is disposed on a substrate 201. A plurality of lower coil elements 71 are disposed on the insulating layer 202. An insulating layer 203 is disposed on the insulating layer 202 around the plurality of lower coil elements 71. An insulating layer 204 is disposed on the plurality of lower coil elements 71 and the insulating layer 203.

[0049] The plurality of lower electrodes 61A are disposed on the insulating layer 204. The insulating layer 207 is disposed on the insulating layer 204 around the plurality of lower electrodes 61A. The plurality of first MR elements 50A are disposed on the plurality of lower electrodes 61A. The insulating layer 208 is disposed on the plurality of lower electrodes 61A and the insulating layer 207 around the plurality of first MR elements 50A. The plurality of upper electrodes 62A are disposed on the plurality of first MR elements 50A and the insulating layer 208. The insulating layer 209 is disposed on the insulating layer 208 around the plurality of upper electrodes 62A.

[0050] The insulating layer 210 is disposed on the plurality of upper electrodes 62A and the insulating layer 209. The plurality of upper coil elements 72 are disposed on the insulating layer 210. The first chip 2 may further include an insulating layer (not shown) that covers the plurality of upper coil elements 72 and the insulating layer 210. Note that, of the components of the first chip 2, FIG. 7 shows the insulating layer 204, the plurality of first MR elements 50A, and the plurality of upper coil elements 72.

[0051] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surfaces of the plurality of lower electrodes 61A are also parallel to the XY plane. The reference plane 4a is also parallel to the XY plane. Therefore, in the above state, the plurality of first MR elements 50A can be said to be arranged on a plane parallel to the reference plane 4a.

[0052] 7, the multiple first MR elements 50A are arranged in a row in the U direction and the V direction. The multiple first MR elements 50A are connected in series by multiple lower electrodes 61A and multiple upper electrodes 62A.

[0053] Here, with reference to FIG. 11, a method of connecting a plurality of first MR elements 50A will be described in detail. In FIG. 11, reference numeral 61 denotes a lower electrode corresponding to any one of the MR elements 50, and reference numeral 62 denotes an upper electrode corresponding to any one of the MR elements 50. As shown in FIG. 11, each of the lower electrodes 61 has an elongated shape. A gap is formed between two of the lower electrodes 61 adjacent in the longitudinal direction of the lower electrodes 61. An MR element 50 is disposed on the upper surface of the lower electrode 61 near both ends in the longitudinal direction. Furthermore, each of the upper electrodes 62 has an elongated shape and is disposed on two of the lower electrodes 61 adjacent in the longitudinal direction of the lower electrode 61 to electrically connect the two adjacent MR elements 50 to each other.

[0054] Although not shown, one MR element 50 located at the end of a row of a plurality of MR elements 50 lined up in a line is connected to another MR element 50 located at the end of the row of a plurality of other MR elements 50 adjacent to it in a direction intersecting the longitudinal direction of the lower electrode 61. These two MR elements 50 are connected to each other by an electrode not shown. The electrode not shown may be an electrode connecting the bottom surfaces or top surfaces of the two MR elements 50 to each other.

[0055] 11 corresponds to the lower electrode 61A, and the upper electrode 62 corresponds to the upper electrode 62A. In this case, the longitudinal direction of the lower electrode 61 is parallel to the V direction.

[0056] Each of the multiple upper coil elements 72 extends in a direction parallel to the Y direction. The multiple upper coil elements 72 are also arranged side by side in the X direction. In particular, in this embodiment, when viewed from the Z direction, two upper coil elements 72 overlap each of the multiple first MR elements 50A.

[0057] Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. The multiple lower coil elements 71 are also arranged so as to line up in the X direction. The shape and arrangement of the multiple lower coil elements 71 may be the same as or different from the shape and arrangement of the multiple upper coil elements 72.

[0058] 7 and 8, the plurality of lower coil elements 71 and the plurality of upper coil elements 72 are electrically connected to form a first coil 70 that applies a magnetic field parallel to the X direction to the free layer 54 of each of the plurality of first MR elements 50A. The first coil 70 may be configured to apply a magnetic field in the X direction to the free layer 54 in the first and second resistor units R11 and R12, and a magnetic field in the −X direction to the free layer 54 in the third and fourth resistor units R13 and R14. The first coil 70 may be controlled by the processor 40.

[0059] Next, the structure of the second chip 3 will be described with reference to Figures 9 and 10. Figure 10 shows a part of the cross section taken along line 10-10 in Figure 9.

[0060] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 307, 308, 309, and 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301.

[0061] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304 and 305 are stacked in this order on the plurality of lower coil elements 81 and the insulating layer 303.

[0062] The plurality of lower electrodes 61B and the plurality of lower electrodes 61C are disposed on an insulating layer 305. An insulating layer 307 is disposed on the insulating layer 305 around the plurality of lower electrodes 61B and the plurality of lower electrodes 61C. The plurality of second MR elements 50B are disposed on the plurality of lower electrodes 61B. The plurality of third MR elements 50C are disposed on the plurality of lower electrodes 61C. An insulating layer 308 is disposed on the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 307 around the plurality of second MR elements 50B and the plurality of third MR elements 50C. The plurality of upper electrodes 62B are disposed on the plurality of second MR elements 50B and the insulating layer 308. The plurality of upper electrodes 62C are disposed on the plurality of third MR elements 50C and the insulating layer 308. An insulating layer 309 is disposed on the insulating layer 308 around the plurality of upper electrodes 62B and the plurality of upper electrodes 62C.

[0063] The insulating layer 310 is disposed on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layer 309. The plurality of upper coil elements 82 are disposed on the insulating layer 310. The second chip 3 may further include an insulating layer (not shown) that covers the plurality of upper coil elements 82 and the insulating layer 310.

[0064] The second chip 3 includes a support member that supports the plurality of second MR elements 50B and the plurality of third MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In this embodiment, the support member is particularly formed of an insulating layer 305. Note that FIG. 9 shows the insulating layer 305, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82, which are components of the second chip 3.

[0065] The insulating layer 305 has multiple convex surfaces 305c that each protrude in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the multiple convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surface 305c is a triangular roof shape created by moving the triangular shape of the convex surface 305c shown in FIG. 10 along a direction parallel to the U direction. The multiple convex surfaces 305c are also aligned in a direction parallel to the V direction.

[0066] Here, attention is focused on any one of the multiple convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is a surface that constitutes a portion of the convex surface 305c on the V-direction side. The second inclined surface 305b is a surface that constitutes a portion of the convex surface 305c on the -V-direction side.

[0067] The top surface 301a of the substrate 301 is parallel to the XY plane. The reference plane 4a is also parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined with respect to the top surface 301a of the substrate 301 and the reference plane 4a, respectively. The second inclined surface 305b faces in a different direction from the first inclined surface 305a. In a VZ cross section perpendicular to the top surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b decreases with increasing distance from the top surface 301a of the substrate 301.

[0068] In this embodiment, since there are multiple convex surfaces 305c, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. Insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0069] The plurality of lower electrodes 61B are disposed on the plurality of first inclined surfaces 305a. The plurality of lower electrodes 61C are disposed on the plurality of second inclined surfaces 305b. As described above, the first inclined surface 305a and the second inclined surface 305b are each inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane. Therefore, the upper surface of each of the plurality of lower electrodes 61B and each of the plurality of lower electrodes 61C is also inclined with respect to the XY plane. Furthermore, the reference plane 4a is parallel to the XY plane. Therefore, it can be said that the plurality of second MR elements 50B and the plurality of third MR elements 50C are disposed on inclined surfaces inclined with respect to the reference plane 4a. The insulating layer 305 is a member for supporting each of the plurality of second MR elements 50B and the plurality of third MR elements 50C so that they are inclined with respect to the reference plane 4a.

[0070] Each of the plurality of first inclined surfaces 305a may be a plane at least partially parallel to the U direction and the W1 direction, and each of the plurality of second inclined surfaces 305b may be a plane at least partially parallel to the U direction and the W2 direction.

[0071] Alternatively, the convex surface 305c may be a semi-cylindrical curved surface formed by moving a curved shape (arch shape) along a direction parallel to the U direction. In this case, the first inclined surface 305a is a curved surface. The second MR element 50B is curved along the curved surface (first inclined surface 305a). Even in this case, for convenience, the magnetization direction of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction as described above. Similarly, the second inclined surface 305b is a curved surface. The third MR element 50C is curved along the curved surface (second inclined surface 305b). Even in this case, for convenience, the magnetization direction of the magnetization fixed layer 52 of the third MR element 50C is defined as a linear direction as described above.

[0072] Although not shown, the insulating layer 305 further has a flat surface surrounding the multiple convex surfaces 305c. The multiple convex surfaces 305c may protrude from the flat surface in the Z direction. The multiple convex surfaces 305c may also be arranged at a predetermined interval so that a flat surface is formed between two adjacent convex surfaces 305c. Alternatively, the insulating layer 305 may have a groove recessed from the flat surface toward the -Z direction. In this case, the multiple convex surfaces 305c may be present within the groove.

[0073] As shown in FIG. 9, the second MR elements 50B are arranged in a plurality of rows in the U direction and a plurality of rows in the V direction. On one first inclined surface 305a, the second MR elements 50B are arranged in a row. Similarly, the third MR elements 50C are arranged in a plurality of rows in the U direction and a plurality of rows in the V direction. On one second inclined surface 305b, the third MR elements 50C are arranged in a row. In this embodiment, the rows of the second MR elements 50B and the rows of the third MR elements 50C are arranged alternately in a direction parallel to the V direction.

[0074] The plurality of second MR elements 50B are connected in series by a plurality of lower electrodes 61B and a plurality of upper electrodes 62B. The above description of the method for connecting the plurality of first MR elements 50A also applies to the method for connecting the plurality of second MR elements 50B. When the MR element 50 shown in FIG. 11 is the second MR element 50B, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61B, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62B. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0075] Similarly, the plurality of third MR elements 50C are connected in series by the plurality of lower electrodes 61C and the plurality of upper electrodes 62C. The above description of the method for connecting the plurality of first MR elements 50A also applies to the method for connecting the plurality of third MR elements 50C. When the MR element 50 shown in FIG. 11 is the third MR element 50C, the lower electrode 61 shown in FIG. 11 corresponds to the lower electrode 61C, and the upper electrode 62 shown in FIG. 11 corresponds to the upper electrode 62C. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0076] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. The multiple upper coil elements 82 are also arranged side by side in the X direction. In particular, in this embodiment, when viewed from the Z direction, two upper coil elements 82 overlap each of the multiple second MR elements 50B and the multiple third MR elements 50C.

[0077] Each of the multiple lower coil elements 81 extends in a direction parallel to the Y direction. The multiple lower coil elements 81 are also arranged so as to line up in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82.

[0078] 9 and 10 , the plurality of lower coil elements 81 and the plurality of upper coil elements 82 are electrically connected to form a second coil 80 that applies a magnetic field parallel to the X direction to the free layers 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. The second coil 80 may be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistor units R21, R22 of the second detection circuit 20 and the first and second resistor units R31, R32 of the third detection circuit 30, and to apply a magnetic field in the −X direction to the free layers 54 of the third and fourth resistor units R23, R24 of the second detection circuit 20 and the third and fourth resistor units R33, R34 of the third detection circuit 30. The second coil 80 may be controlled by the processor 40.

[0079] Next, the arrangement of the multiple second MR elements 50B and the multiple third MR elements 50C will be described with reference to FIG. 12. FIG. 12 is a plan view showing an element arrangement region. The second chip 3 has an element arrangement region A0 for arranging the multiple second MR elements 50B and the multiple third MR elements 50C. Since the second chip 3 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 has the element arrangement region A0. In this embodiment, the element arrangement region A0 and multiple regions described later are defined as planar regions parallel to the XY plane. The multiple second MR elements 50B and the multiple third MR elements 50C overlap with the element arrangement region A0 when viewed from the Z direction. In this embodiment, for convenience, the element arrangement region A0 is assumed to be on the upper surface of the insulating layer 305.

[0080] The ratio of the area of ​​the element placement region A0 to the area of ​​the top surface 3a of the second chip 3 is 2% or more. This ratio may be in the range of 10 to 90%, or may be in the range of 45 to 75%. Furthermore, the dimension of the element placement region A0 in the first reference direction Rx may be larger than the dimension in the second reference direction Ry.

[0081] The element arrangement region A0 includes a first region A1, a second region A2, a third region A3, and a fourth region A4. The first region A1 is a region corresponding to the first resistor portions R21 and R31. The second region A2 is a region corresponding to the second resistor portions R22 and R32. The third region A3 is a region corresponding to the third resistor portions R23 and R33. The fourth region A4 is a region corresponding to the fourth resistor portions R24 and R34. The dimension of each of the first to fourth regions A1 to A4 in the first reference direction Rx may be larger than the dimension in the second reference direction Ry.

[0082] The plurality of second MR elements 50B are divided and arranged in first to fourth regions A1 to A4. The second MR elements 50B constituting the first resistor section R21 are arranged in the first region A1. The second MR elements 50B constituting the second resistor section R22 are arranged in the second region A2. The second MR elements 50B constituting the third resistor section R23 are arranged in the third region A3. The second MR elements 50B constituting the fourth resistor section R24 are arranged in the fourth region A4.

[0083] The plurality of third MR elements 50C are divided and arranged in first to fourth regions A1 to A4. The third MR elements 50C constituting the first resistor section R31 are arranged in the first region A1. The third MR elements 50C constituting the second resistor section R32 are arranged in the second region A2. The third MR elements 50C constituting the third resistor section R33 are arranged in the third region A3. The third MR elements 50C constituting the fourth resistor section R34 are arranged in the fourth region A4.

[0084] Next, the arrangement of the first to fourth regions A1 to A4 will be described with reference to Fig. 12. The first to fourth regions A1 to A4 are arranged so as to be aligned along the first reference direction Rx. In the example shown in Fig. 12, the first to fourth regions A1 to A4 are aligned in the order of regions A2, A3, A1, A4 from the edge of the element arrangement region A0 on the -X direction side toward the edge of the element arrangement region A0 on the X direction side. However, in the present invention, the arrangement order of the first to fourth regions A1 to A4 is not limited to this example.

[0085] In FIG. 12, the point marked with the symbol C1 indicates the center of gravity of the first region A1 when viewed from the Z direction. The point marked with the symbol C2 indicates the center of gravity of the second region A2 when viewed from the Z direction. The point marked with the symbol C3 indicates the center of gravity of the third region A3 when viewed from the Z direction. The point marked with the symbol C4 indicates the center of gravity of the fourth region A4 when viewed from the Z direction.

[0086] The center of gravity C1 of the first region A1 and the center of gravity C4 of the fourth region A4 are offset from each other in the second reference direction Ry. In the example shown in Fig. 12, the position of the center of gravity C4 of the fourth region A4 in the second reference direction Ry is further in the -Y direction than the position of the center of gravity C1 of the first region A1 in the second reference direction Ry. The center of gravity C1 of the first region A1 and the center of gravity C4 of the fourth region A4 may be offset from each other by the distance in the second reference direction Ry between two adjacent convex surfaces 305c among the multiple convex surfaces 305c.

[0087] The center of gravity C2 of the second region A2 and the center of gravity C3 of the third region A3 are offset from each other in the second reference direction Ry. In the example shown in Fig. 12, the position of the center of gravity C3 of the third region A3 in the second reference direction Ry is further in the -Y direction than the position of the center of gravity C2 of the second region A2 in the second reference direction Ry. The center of gravity C2 of the second region A2 and the center of gravity C3 of the third region A3 may be offset from each other by the distance in the second reference direction Ry between two adjacent convex surfaces 305c among the multiple convex surfaces 305c.

[0088] The direction in which the third region A3 is shifted relative to the second region A2 may be the same as the direction in which the fourth region A4 is shifted relative to the first region A1. The amount of shift of the third region A3 relative to the second region A2 may or may not be the same as the amount of shift of the fourth region A4 relative to the first region A1. The position of the center of gravity C2 of the second region A2 in the second reference direction Ry may or may not be the same as the position of the center of gravity C1 of the first region A1 in the second reference direction Ry. The position of the center of gravity C4 of the fourth region A4 in the second reference direction Ry may or may not be the same as the position of the center of gravity C3 of the third region A3 in the second reference direction Ry.

[0089] Next, the shapes of the first to fourth regions A1 to A4 will be described with reference to FIG. 12. Here, the first region A1 will be described as an example. The first region A1 has a first edge A1a and a second edge A1b located at opposite ends in the first reference direction Rx, and a third edge A1c and a fourth edge A1d located at opposite ends in the second reference direction Ry. The first edge A1a is located at the end of the first region A1 on the -X direction side. The second edge A1b is located at the end of the first region A1 on the X direction side. The third edge A1c is located at the end of the first region A1 on the -Y direction side. The fourth edge A1d is located at the end of the first region A1 on the Y direction side.

[0090] The first edge A1a and the second edge A1b each extend along the second reference direction Ry. The third edge A1c and the fourth edge A1d each extend along a third reference direction that intersects with the first reference direction Rx and the second reference direction Ry and is parallel to the reference plane 4a. In this embodiment, the third reference direction is parallel to one direction between the X direction and the U direction. The angle between the first edge A1a and the third edge A1c and the angle between the second edge A1b and the fourth edge A1d are both obtuse angles. The angle between the first edge A1a and the fourth edge A1d and the angle between the third edge A1c and the fourth edge A1d are both acute angles.

[0091] Here, the definitions of the first to fourth edges A1a to A1d will be explained. As shown in FIG. 10, in the first region A1, a plurality of element rows, each of which is composed of a plurality of MR elements 50 (a plurality of second MR elements 50B and a plurality of third MR elements 50C) aligned in a line along the second reference direction Ry, are arranged along the first reference direction Rx. At least a portion of the first edge A1a may coincide with a first line defined by the plurality of MR elements 50 included in the element row located furthest to the −X direction side in the first region A1. The first line is obtained by shifting a line connecting the plurality of MR elements 50 with the shortest length toward the −X direction side of the plurality of MR elements 50 so as not to overlap the plurality of MR elements 50 when viewed from the Z direction. The first line is parallel to the second reference direction Ry. The first edge A1a essentially indicates the positions of the plurality of MR elements 50.

[0092] At least a portion of the second edge A1b may coincide with a second line defined by the plurality of MR elements 50 included in the element row located furthest in the X direction in the first region A1. The second line is a line connecting the plurality of MR elements 50 at the shortest length, moved toward the X direction of the plurality of MR elements 50 so as not to overlap with the plurality of MR elements 50 when viewed from the Z direction. The second line is parallel to the second reference direction Ry. The second edge A1b substantially indicates the positions of the plurality of MR elements 50.

[0093] At least a portion of the third edge A1c may coincide with a third line defined by the plurality of MR elements 50 located furthest in the -Y direction in each of the plurality of element rows. The third line is a line connecting the plurality of MR elements 50 at the shortest length, moved toward the -Y direction of the plurality of MR elements 50 so as not to overlap with the plurality of MR elements 50 when viewed from the Z direction. The third line is parallel to the third reference direction. The third edge A1c substantially indicates the positions of the plurality of MR elements 50.

[0094] At least a portion of the fourth edge A1d may coincide with a fourth line defined by the plurality of MR elements 50 located furthest in the Y direction in each of the plurality of element rows. The fourth line is a line connecting the plurality of MR elements 50 at the shortest length, which is moved toward the Y direction of the plurality of MR elements 50 so as not to overlap with the plurality of MR elements 50 when viewed from the Z direction. The fourth line is parallel to the third reference direction. The fourth edge A1d essentially indicates the positions of the plurality of MR elements 50.

[0095] One end of the third edge A1c may be directly connected to one end of the first edge A1a, or may be connected via a fifth edge connecting one end of the third edge A1c to one end of the first edge A1a. The other end of the third edge A1c may be directly connected to one end of the second edge A1b, or may be connected via a sixth edge connecting the other end of the third edge A1c to one end of the second edge A1b. One end of the fourth edge A1d may be directly connected to the other end of the first edge A1a, or may be connected via a seventh edge connecting one end of the fourth edge A1d to the other end of the first edge A1a. The other end of the fourth edge A1d may be directly connected to the other end of the second edge A1b, or may be connected via an eighth edge connecting the other end of the fourth edge A1d to the other end of the second edge A1b. Each of the fifth to eighth edges may extend in a direction intersecting each of the first reference direction Rx, the second reference direction Ry, and the third reference direction.

[0096] The first area A1 may be an area surrounded only by the first to fourth edges A1a to A1d, or may be an area surrounded by the first to fourth edges A1a to A1d and at least one of the fifth to eighth edges.

[0097] The second region A2 has a first edge A2a, a second edge A2b, a third edge A2c, and a fourth edge A2d. The description of the first to fourth edges A1a-A1d of the first region A1 also applies to the first to fourth edges A2a-A2d of the second region A2. If the first region A1 and the first to fourth edges A1a-A1d in the description of the first to fourth edges A1a-A1d of the first region A1 are replaced with the second region A2 and the first to fourth edges A2a-A2d, respectively, the description becomes the first to fourth edges A2a-A2d of the second region A2. The third reference direction in the second region A2 may or may not be the same direction as the third reference direction in the first region A1.

[0098] The third region A3 has a first edge A3a, a second edge A3b, a third edge A3c, and a fourth edge A3d. The description of the first to fourth edges A1a-A1d of the first region A1 also applies to the first to fourth edges A3a-A3d of the third region A3. If the first region A1 and the first to fourth edges A1a-A1d in the description of the first to fourth edges A1a-A1d of the first region A1 are replaced with the third region A3 and the first to fourth edges A3a-A3d, respectively, the description becomes the first to fourth edges A3a-A3d of the third region A3. Note that the third reference direction in the third region A3 may or may not be the same direction as the third reference direction in the first region A1.

[0099] The fourth region A4 has a first edge A4a, a second edge A4b, a third edge A4c, and a fourth edge A4d. The description of the first to fourth edges A1a-A1d of the first region A1 also applies to the first to fourth edges A4a-A4d of the fourth region A4. If the first region A1 and the first to fourth edges A1a-A1d in the description of the first to fourth edges A1a-A1d of the first region A1 are replaced with the fourth region A4 and the first to fourth edges A4a-A4d, respectively, the description becomes the first to fourth edges A4a-A4d of the fourth region A4. Note that the third reference direction in the fourth region A4 may or may not be the same direction as the third reference direction in the first region A1.

[0100] Next, the element arrangement region of the first chip 2 will be described. Although not shown, the first chip 2 has an element arrangement region for arranging multiple first MR elements 50A. In this embodiment, the element arrangement region of the first chip 2 and multiple regions described later are defined as planar regions parallel to the XY plane. The multiple first MR elements 50A overlap with the element arrangement region of the first chip 2 when viewed from the Z direction. In this embodiment, for convenience, the element arrangement region of the first chip 2 is assumed to be on the upper surface of the insulating layer 204.

[0101] The ratio of the area of ​​the element arrangement region to the area of ​​the top surface 2a of the first chip 2 is 2% or more, and may be within the range of 10 to 90%, or may be within the range of 45 to 75%.

[0102] The element arrangement region of the first chip 2 includes a first region corresponding to the first resistor portion R11, a second region corresponding to the second resistor portion R12, a third region corresponding to the third resistor portion R13, and a fourth region corresponding to the fourth resistor portion R14. The plurality of first MR elements 50A are arranged in the first to fourth regions. The first MR elements 50A constituting the first resistor portion R11 are arranged in the first region. The first MR elements 50A constituting the second resistor portion R12 are arranged in the second region. The first MR elements 50A constituting the third resistor portion R13 are arranged in the third region. The first MR elements 50A constituting the fourth resistor portion R14 are arranged in the fourth region.

[0103] Next, the multiple convex surfaces 305c will be described in detail. The magnetic sensor 1 has multiple structures, each of which has a structure that causes the multiple MR elements 50 to detect a specific component of the target magnetic field. In this embodiment, multiple second MR elements 50B are arranged on each of the multiple first inclined surfaces 305a. Each of the multiple first inclined surfaces 305a has a structure that is inclined with respect to the upper surface 301a and the reference plane 4a so that the multiple second MR elements 50B detect a component of the target magnetic field in a direction parallel to the W1 direction. Therefore, the multiple first inclined surfaces 305a correspond to the "multiple structures" of the present invention.

[0104] In this embodiment, the third MR elements 50C are arranged one on each of the second inclined surfaces 305b. Each of the second inclined surfaces 305b has a structure inclined with respect to the upper surface 301a, i.e., the reference plane 4a, so that the third MR elements 50C detect a component of the target magnetic field in a direction parallel to the W2 direction. Therefore, the second inclined surfaces 305b correspond to the "multiple structures" of the present invention.

[0105] Each of the plurality of convex surfaces 305c includes a first inclined surface 305a and a second inclined surface 305b. Therefore, the plurality of convex surfaces 305c also corresponds to the "plurality of structures" of the present invention. Below, the characteristics of the "plurality of structures" of the present invention will be described using the plurality of convex surfaces 305c as an example.

[0106] Fig. 13 is a plan view showing the plurality of convex surfaces 305c. For convenience, Fig. 13 shows a gap between two adjacent convex surfaces 305c. Fig. 13 also shows the first to fourth regions A1 to A4 of the element arrangement region A0 of the second chip 3. The plurality of convex surfaces 305c are present in the first to fourth regions A1 to A4 of the element arrangement region A0 of the second chip 3, but are not present in the first to fourth regions of the element arrangement region of the first chip 2.

[0107] Each of the plurality of convex surfaces 305c extends in a direction intersecting the first reference direction Rx at an angle other than 90°. In this embodiment, particularly, each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The plurality of convex surfaces 305c includes a convex surface 305c that extends across at least two of the first to fourth regions A1 to A4. The plurality of convex surfaces 305c further includes a convex surface 305c that extends across only one of the first to fourth regions A1 to A4.

[0108] The relationship between the multiple convex surfaces 305c and the first to fourth regions A1 to A4 will be described in more detail below. The multiple convex surfaces 305c include convex surfaces 305c that extend only into the second region A2 and convex surfaces 305c that extend only into the fourth region A4. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the second and third regions A2 and A3 but not into the first and fourth regions A1 and A4, and convex surfaces 305c that extend across the first and fourth regions A1 and A4 but not into the second and third regions A2 and A3. The plurality of convex surfaces 305c further includes convex surfaces 305c that extend across the first to third regions A1 to A3 but not into the fourth region A4, and convex surfaces 305c that extend across the first, third, and fourth regions A1, A3, and A4 but not into the second region A2. The plurality of convex surfaces 305c further includes convex surfaces 305c that extend across the first to fourth regions A1 to A4.

[0109] Furthermore, the convex surface 305c has a first end and a second end located at both ends in the longitudinal direction of the convex surface 305c. The first end and the second end of each of the plurality of convex surfaces 305c are not present inside each of the first to fourth regions A1 to A4, nor between any two adjacent regions among the first to fourth regions A1 to A4.

[0110] 14 is an explanatory diagram showing one convex surface 305c and the first and fourth edges A1a and A1d of the first region A1. Here, the angle θ1 that the convex surface 305c forms with the first edge A1a and the angle θ2 that the convex surface 305c forms with the fourth edge A1d are defined as follows: The convex surface 305c has a third end 305c1, which is the end of the convex surface 305c on the -V direction side, and a fourth end 305c2, which is the end of the convex surface 305c on the V direction side. In this embodiment, the angle (acute angle) that the third end 305c1 forms with the first edge A1a is defined as angle θ1, and the angle (acute angle) that the fourth end 305c2 forms with the fourth edge A1d is defined as angle θ2.

[0111] Angle θ1 is greater than angle θ2. Angle θ1 may be within a range of 43° to 47°. Angle θ2 may be smaller than 45° and within a range of 38° to 42°. Furthermore, the sum of angle θ1 and angle θ2 may be within a range of 81° to 89°.

[0112] In this embodiment, the angle (acute angle) that the third end 305c1 makes with respect to the second edge A1b is defined as the angle that the convex surface 305c makes with respect to the second edge A1b, and the angle (acute angle) that the fourth end 305c2 makes with respect to the third edge A1c is defined as the angle that the convex surface 305c makes with respect to the third edge A1c. The angle that the convex surface 305c makes with respect to the second edge A1b may be equal to angle θ1. The angle that the convex surface 305c makes with respect to the third edge A1c may be equal to angle θ2. The angle that the convex surface 305c makes with respect to the first edge A1a or the second edge A1b (angle θ1) is greater than the angle that the convex surface 305c makes with respect to the third edge A1c or the fourth edge A1d (angle θ2).

[0113] In this embodiment, the angle that the first inclined surface 305a or the second inclined surface 305b makes with each of the first to fourth edges A1a to A1d is equal to the angle that the convex surface 305c makes with each of the first to fourth edges A1a to A1d.

[0114] Up to this point, we have focused on one convex surface 305c and explained the relationship between the convex surface 305c and the first through fourth edges A1a-A1d of the first region A1. The above explanation also applies to the other convex surfaces 305c. Furthermore, the relationship between the convex surfaces 305c and the first through fourth edges A1a-A1d of the first region A1 also applies to the relationship between the convex surfaces 305c and the first through fourth edges A2a-A2d of the second region A2, the relationship between the convex surfaces 305c and the first through fourth edges A3a-A3d of the third region A3, and the relationship between the convex surfaces 305c and the first through fourth edges A4a-A4d of the fourth region A4.

[0115] Next, the arrangement of the multiple MR elements 50 (the multiple second MR elements 50B and the multiple third MR elements 50C) in the first region A1 will be described with reference to Fig. 15. Fig. 15 is an explanatory diagram showing the multiple MR elements in a part of the first region A1.

[0116] Each of the MR elements 50 has a shape elongated in a direction different from any of the first reference direction Rx, the second reference direction Ry, and the third reference direction. In this embodiment, particularly, each of the MR elements 50 has a shape elongated in a direction parallel to the U direction.

[0117] As shown in Figure 15, in the first region A1, the multiple MR elements 50 are arranged in a row along the second reference direction Ry and in a row along a direction parallel to the longitudinal direction of each of the multiple MR elements 50 in the first region A1, i.e., a direction parallel to the U direction.

[0118] In this embodiment, the interval between any two MR elements 50 is represented by the interval between the center of gravity of one MR element 50 as viewed from the Z direction and the center of gravity of the other MR element 50 as viewed from the Z direction. As shown in FIG. 15 , the interval in the first reference direction Rx between two MR elements 50 adjacent to each other in a direction parallel to the longitudinal direction of the MR elements 50 in the first region A1, i.e., a direction parallel to the U direction, is represented by the symbol Dx0. Furthermore, the interval in the second reference direction Ry between two MR elements 50 adjacent to each other in a direction parallel to the U direction is represented by the symbol Dy0. The interval Dx0 may be equal to or different from the interval Dy0.

[0119] The distance between two adjacent MR elements 50 in the second reference direction Ry is represented by the symbol Dy1. In this embodiment, the distance Dy1 is smaller than the distance Dy0.

[0120] Next, the first to third detection signals will be described. First, the first detection signal will be described with reference to FIG. 4. When the intensity of the component of the target magnetic field parallel to the U direction changes, the resistance values ​​of the resistors R11 to R14 of the first detection circuit 10 change such that the resistance values ​​of the resistors R11 and R13 increase while the resistance values ​​of the resistors R12 and R14 decrease, or the resistance values ​​of the resistors R11 and R13 decrease while the resistance values ​​of the resistors R12 and R14 increase. This causes a change in the potential of each of the signal output terminals E11 and E12. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11 and generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0121] Next, the second detection signal will be described with reference to Fig. 5. When the intensity of the component of the target magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 of the second detection circuit 20 change such that the resistance values ​​of the resistors R21 and R23 increase while the resistance values ​​of the resistors R22 and R24 decrease, or the resistance values ​​of the resistors R21 and R23 decrease while the resistance values ​​of the resistors R22 and R24 increase. This causes a change in the potential of each of the signal output terminals E21 and E22. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21 and generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0122] Next, the third detection signal will be described with reference to FIG. 6. When the intensity of the component of the target magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 of the third detection circuit 30 change such that the resistance values ​​of the resistors R31 and R33 increase while the resistance values ​​of the resistors R32 and R34 decrease, or the resistance values ​​of the resistors R31 and R33 decrease while the resistance values ​​of the resistors R32 and R34 increase. This causes a change in the potential of each of the signal output terminals E31 and E32. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31 and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0123] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11 and S12. The first detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the U direction. Hereinafter, the first detection value will be represented by the symbol Su.

[0124] In this embodiment, the processor 40 generates the first detection value Su by performing a calculation that includes determining the difference S11-S12 between the first detection signal S11 and the first detection signal S12. The first detection value Su may be the difference S11-S12 itself, or may be the difference S11-S12 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0125] The processor 40 is further configured to generate second and third detection values ​​based on the second detection signals S21, S22 and the third detection signals S31, S32. The second detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the V direction. The third detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Z direction. Hereinafter, the second detection value will be represented by the symbol Sv, and the third detection value will be represented by the symbol Sz.

[0126] The processor 40 generates the second and third detection values ​​Sv and Sz, for example, as follows: The processor 40 first generates a value S1 by an operation that includes determining the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and generates a value S2 by an operation that includes determining the difference S31-S32 between the third detection signal S31 and the third detection signal S32. Next, the processor 40 calculates the values ​​S3 and S4 using the following equations (1) and (2).

[0127] S3 = (S2 + S1) / (2cosα) … (1) S4 = (S2 - S1) / (2 sin α) ... (2)

[0128] The second detection value Sv may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been made. Similarly, the third detection value Sz may be the value S4 itself, or may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been made.

[0129] Next, the effects of the magnetic sensor 1 according to the present embodiment will be described in comparison with magnetic sensors of first to fourth comparative examples. First, magnetic sensor 401 of the first comparative example will be described. FIG. 16 is a plan view showing multiple convex surfaces in magnetic sensor 401 of the first comparative example. Magnetic sensor 401 of the first comparative example is configured using chip 403 of the comparative example instead of second chip 3 of the present embodiment. Chip 403 of the comparative example includes an insulating layer of the comparative example having multiple convex surfaces 405c instead of insulating layer 305 of the present embodiment. Other configurations of chip 403 of the comparative example are similar to those of second chip 3.

[0130] The chip 403 of the comparative example has an element placement area corresponding to the element placement area A0 of this embodiment. The element placement area of ​​the chip 403 of the comparative example includes a first area A401, a second area A402, a third area A403, and a fourth area A404, which correspond to the first area A1, the second area A2, the third area A3, and the fourth area A4 of this embodiment, respectively. The layout of the first to fourth areas A401 to A404 is A4 The arrangement is similar to that of

[0131] The shape of each of the plurality of convex surfaces 405c is basically the same as the shape of each of the plurality of convex surfaces 305c, except that each of the plurality of convex surfaces 405c extends to only one of the first to fourth regions A401 to A404, and does not extend across two or more of the first to fourth regions A401 to A404.

[0132] The convex surface 405c has a first end and a second end located at both ends in the longitudinal direction of the convex surface 405c. A plurality of first end portions and a plurality of second end portions are present between any two adjacent regions among the first to fourth regions A401 to A404.

[0133] The plurality of MR elements 50 are formed on the plurality of convex surfaces 405c. In order to accurately form the MR elements 50, it is necessary to accurately form the plurality of convex surfaces 405c. The plurality of convex surfaces 405c are formed, for example, by etching the insulating layer of the comparative example.

[0134] Here, we focus on the space between two adjacent regions among the first through fourth regions A401-A404. In this space, multiple first ends and multiple second ends face each other. If the distance between the multiple first ends and the multiple second ends becomes small, it becomes difficult to accurately form the multiple convex surfaces 405c. Therefore, it is necessary to increase the distance between the multiple first ends and the multiple second ends, i.e., the distance between the two regions, to some extent. When comparing the first through fourth regions A401-A404 with the same area, the element arrangement region of the chip 403 of the comparative example increases as the distance between the two regions increases. As a result, the area of ​​the chip 403 of the comparative example when viewed from the Z direction also increases.

[0135] In contrast, in this embodiment, most of the multiple convex surfaces 305c extend across at least two of the first to fourth regions A1 to A4. The first end and second end of each of the multiple convex surfaces 305c are not located between two adjacent regions of the first to fourth regions A1 to A4. This reduces the distance between the two regions, thereby reducing the area of ​​the element arrangement region A0 and the area of ​​the second chip 3 when viewed from the Z direction. As a result, this embodiment allows for the miniaturization of the magnetic sensor 1. Furthermore, by miniaturizing the magnetic sensor 1, the magnetic sensor device 100 can also be miniaturized.

[0136] Next, a magnetic sensor 401B of the second comparative example will be described. Fig. 17 is a plan view showing one convex surface of magnetic sensor 401B of the second comparative example.

[0137] The configuration of magnetic sensor 401B of the second comparative example differs from the configuration of magnetic sensor 401A of the first comparative example in the following respects: In the second comparative example, each of the multiple convex surfaces 405c extends in a direction parallel to one direction between the U direction and the -Y direction.

[0138] The first region A401 has the same or similar shape as the first region A1 in the present embodiment. The first region A401 has a first edge, a second edge, a third edge, and a fourth edge, which correspond to the first edge A1a, the second edge A1b, the third edge A1c, and the fourth edge A1d in the present embodiment, respectively. Here, the angle formed by the convex surface 405c with respect to the first edge of the first region A401 is referred to as the first angle, and the angle formed by the convex surface 405c with respect to the fourth edge of the first region A401 is referred to as the second angle. The definitions of the first and second angles are the same as those of the angles θ1 and θ2 shown in FIG. 14. In the second comparative example, the first angle is smaller than the second angle. In the second comparative example, the first angle is smaller than 45°.

[0139] 17 shows one convex surface 305c of the present embodiment in addition to one convex surface 405c of the second comparative example. One convex surface 305c passes through the corner (see FIG. 12) formed by the intersection of the first edge A2a and the fourth edge A2d of the second region A2, and extends across the first to fourth regions A1 to A4. One convex surface 405c passes through a position corresponding to the above-mentioned corner.

[0140] 17 extends across the first to third regions A401-A403, but does not extend into the fourth region A404. That is, in the second comparative example, the number of convex surfaces 405c extending across multiple regions including the fourth region A404 is smaller than in the present embodiment. Instead, in the second comparative example, the number of convex surfaces 405c extending only into the fourth region A404 is greater.

[0141] To form the MR elements 50 with precision, it is necessary to increase the distance between the MR elements 50 and the first end or the second end of the convex surface 405c to some extent. Therefore, when comparing the same number of MR elements 50, to reduce the size of the chip 403 while forming the MR elements 50 with precision, it is necessary to reduce the number of first ends and second ends of the convex surface 405c, i.e., the number of convex surfaces 405c. However, in the second comparative example, as described above, the number of convex surfaces 405c extending only in the fourth region A404 increases, and therefore the area of ​​the fourth region A404 increases, and the area of ​​the chip 403 when viewed from the Z direction also increases.

[0142] In contrast, in the present embodiment, the number of convex surfaces 305c extending only in the fourth region A4 can be reduced compared to the second comparative example. As a result, according to the present embodiment, the area of ​​the fourth region A4 and the area of ​​the second chip 3 when viewed from the Z direction can be reduced. As a result, according to the present embodiment, the magnetic sensor 1 can be made smaller.

[0143] Next, a magnetic sensor 401C of a third comparative example will be described. Fig. 18 is a plan view showing a plurality of convex surfaces 405c in the magnetic sensor 401C of the third comparative example.

[0144] The configuration of magnetic sensor 401C of the third comparative example differs from the configuration of magnetic sensor 401A of the first comparative example in the following respects: In the third comparative example, the center of gravity of first region A401 when viewed from the Z direction, the center of gravity of second region A402 when viewed from the Z direction, the center of gravity of third region A403 when viewed from the Z direction, and the center of gravity of fourth region A404 when viewed from the Z direction are all at the same position in the second reference direction Ry.

[0145] Here, attention is focused on the specific convex surface 405c1 indicated by the reference numeral 405c1 in FIG. 18. The specific convex surface 405c1 includes first and second inclined surfaces corresponding to the first and second inclined surfaces 305a and 305b in the present embodiment. The specific convex surface 405c1 extends across the first through fourth regions A401 to A404. The first inclined surface, which is the inclined surface on the V-direction side of the specific convex surface 405c1, is present in all of the first through fourth regions A401 to A404. On the other hand, the second inclined surface, which is the inclined surface on the −V-direction side of the specific convex surface 405c1, is present in the first through third regions A401 to A403 but not in the fourth region A404. In this case, in the fourth region A404, the third MR element 50C cannot be formed on the second inclined surface of the specific convex surface 405c1.

[0146] As described above, in the third comparative example, there may be convex surfaces 405c on which MR elements 50 cannot be formed. In contrast, in the present embodiment, the centers of gravity of two specific regions among the first to fourth regions A1 to A4 are shifted along the second reference direction Ry. For example, when a specific region includes one of the first and second inclined surfaces 305a and 305b, the number of first inclined surfaces 305a or second inclined surfaces 305b extending across multiple regions can be increased by shifting the specific region so that it includes both the first and second inclined surfaces 305a and 305b. Furthermore, when a specific region includes one of the first and second inclined surfaces 305a and 305b, the area of ​​the convex surfaces 305c included in the specific region on which MR elements 50 cannot be formed can be reduced by shifting the specific region so that it does not include both the first and second inclined surfaces 305a and 305b. This allows for accurate formation of multiple MR elements 50 in the specific region.

[0147] Next, a magnetic sensor 401D of a fourth comparative example will be described. Fig. 19 is a plan view showing a part of a first region A401 in a magnetic sensor 401D of the fourth comparative example.

[0148] The configuration of the magnetic sensor 401C of the fourth comparative example differs from the configuration of the magnetic sensor 401A of the first comparative example in the following respects: In the fourth comparative example, the multiple MR elements 50 in the first region A401 are arranged in a row along the second reference direction Ry and in a row along the first reference direction Rx.

[0149] 15, the distance in the first reference direction Rx between two MR elements 50 adjacent in a direction parallel to the longitudinal direction of the MR elements 50, i.e., a direction parallel to the U direction, is represented by the symbol Dx0. The distance in the second reference direction Ry between two MR elements 50 adjacent in a direction parallel to the U direction is represented by the symbol Dy0. In the fourth comparative example, the distance between two MR elements 50 adjacent in the second reference direction Ry is equal to the distance Dy0.

[0150] In contrast, in this embodiment, the interval Dy1 between two MR elements 50 adjacent to each other in the second reference direction Ry is smaller than the interval Dy0, as described with reference to Fig. 15. When comparing cases where the number of MR elements present in the first region A1 is the same, when the interval Dy1 is smaller than the interval Dy0, as in this embodiment, the first region A1 can be made smaller than when the interval Dy1 is equal to the interval Dy0.

[0151] The above description of the first region A1 also applies to the second to fourth regions A2 to A4. Therefore, according to this embodiment, the area of ​​the element arrangement region A0 and the area of ​​the second chip 3 when viewed from the Z direction can be reduced. As a result, according to this embodiment, the magnetic sensor 1 can be made smaller.

[0152] 19, the first edge of the first region A401 is indicated by the symbol A401a, and the fourth edge of the first region A401 is indicated by the symbol A401d. In the fourth comparative example, the fourth edge A401d extends in a direction parallel to the first reference direction Rx. Although not shown, in the fourth comparative example, the third edge of the first region A401 also extends in a direction parallel to the first reference direction Rx.

[0153] The above description of the first area A401 also applies to the second to fourth areas A402 to A404.

[0154] [Variations] Next, first and second modified examples of the magnetic sensor 1 according to the present embodiment will be described. First, the first modified example will be described with reference to FIG. 20. FIG. 20 is a plan view showing the first to fourth regions A1 to A4 in the first modified example. In the first modified example, the position of the center of gravity C4 of the fourth region A4 in the second reference direction Ry is further in the Y direction than the position of the center of gravity C1 of the first region A1 in the second reference direction Ry. The position of the center of gravity C3 of the third region A3 in the second reference direction Ry is further in the Y direction than the position of the center of gravity C2 of the second region A2 in the second reference direction Ry.

[0155] Next, a second modified example will be described with reference to Fig. 21. Fig. 21 is a plan view showing the first to fourth regions A1 to A4 in the second modified example. In the second modified example, the position of the center of gravity C4 of the fourth region A4 in the second reference direction Ry is further in the Y direction than the position of the center of gravity C1 of the first region A1 in the second reference direction Ry. The position of the center of gravity C3 of the third region A3 in the second reference direction Ry is further in the -Y direction than the position of the center of gravity C2 of the second region A2 in the second reference direction Ry. In the second modified example, the direction in which the third region A3 is shifted relative to the second region A2 is opposite to the direction in which the fourth region A4 is shifted relative to the first region A1.

[0156] In the second modification, the position of the center of gravity C2 of the second region A2 in the second reference direction Ry may or may not be the same as the position of the center of gravity C4 of the fourth region A4 in the second reference direction Ry, and the position of the center of gravity C3 of the third region A3 in the second reference direction Ry may or may not be the same as the position of the center of gravity C1 of the first region A1 in the second reference direction Ry.

[0157] [Second embodiment] Next, a second embodiment of the present invention will be described with reference to Fig. 22. Fig. 22 is a plan view showing multiple convex surfaces 305c in this embodiment. In this embodiment, the element arrangement region A0 of the second chip 3 includes a first region A11, a second region A12, a third region A13, and a fourth region A14, instead of the first to fourth regions A1 to A4 in the first embodiment.

[0158] The first region A11 corresponds to the first resistor R21 (see FIG. 5) of the second detection circuit 20 and the first resistor R31 (see FIG. 6) of the third detection circuit 30. The second region A12 corresponds to the second resistor R22 (see FIG. 5) of the second detection circuit 20 and the second resistor R32 (see FIG. 6) of the third detection circuit 30. The third region A13 corresponds to the third resistor R23 (see FIG. 5) of the second detection circuit 20 and the third resistor R33 (see FIG. 6) of the third detection circuit 30. The fourth region A14 corresponds to the fourth resistor R24 ​​(see FIG. 5) of the second detection circuit 20 and the fourth resistor R34 (see FIG. 6) of the third detection circuit 30.

[0159] In this embodiment, the second MR elements 50B of the second detection circuit 20 are divided and arranged in first to fourth regions A11 to A14. The third MR elements 50C of the third detection circuit 30 are divided and arranged in first to fourth regions A11 to A14.

[0160] The first and fourth regions A11 and A14 are arranged side by side along the first reference direction Rx. The first region A11 is located near the edge of the element placement region A0 on the X-direction side. The fourth region A14 is located near the edge of the element placement region A0 on the -X-direction side. The second and third regions A12 and A13 are located ahead of the first and fourth regions A11 and A14, respectively, in the -Y direction.

[0161] Each of the first to fourth regions A11 to A14 has a first edge and a second edge located at opposite ends in the first reference direction Rx, and a third edge and a fourth edge located at opposite ends in the second reference direction Ry. The first to fourth edges of each of the first to fourth regions A11 to A14 may have similar characteristics to the first to fourth edges A1a to A1d of the first region A1 in the first embodiment, except for the length of each of the first to fourth edges.

[0162] The plurality of convex surfaces 305c includes a convex surface 305c extending only in the first region A11 and a convex surface 305c extending only in the third region A13. The plurality of convex surfaces 305c further includes a convex surface 305c extending across the first and second regions A11 and A12 but not across the third and fourth regions A13 and A14, a convex surface 305c extending across the second and fourth regions A12 and A14 but not across the first and third regions A11 and A13, and a convex surface 305c extending across the third and fourth regions A13 and A14 but not across the first and second regions A11 and A12. The multiple convex surfaces 305c further include convex surfaces 305c that extend across the first, second, and fourth regions A11, A12, and A14 but do not extend into the third region A13, and convex surfaces 305c that extend across the second to fourth regions A12 to A14 but do not extend into the first region A11.

[0163] The first end and the second end of each of the plurality of convex surfaces 305c are not present inside each of the first to fourth regions A11 to A14, nor between any two adjacent regions among the first to fourth regions A11 to A14.

[0164] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0165] [Third embodiment] Next, a third embodiment of the present invention will be described with reference to Fig. 23. Fig. 23 is a plan view showing multiple convex surfaces 305c in this embodiment. In this embodiment, the element arrangement region A0 of the second chip 3 includes a first region A21, a second region A22, a third region A23, and a fourth region A24, instead of the first to fourth regions A1 to A4 in the first embodiment.

[0166] The first region A21 is a region corresponding to the first resistor R21 (see FIG. 5) of the second detection circuit 20 and the first resistor R31 (see FIG. 6) of the third detection circuit 30. The second region A22 is a region corresponding to the second resistor R22 (see FIG. 5) of the second detection circuit 20 and the second resistor R32 (see FIG. 6) of the third detection circuit 30. The third region A23 is a region corresponding to the third resistor R23 (see FIG. 5) of the second detection circuit 20 and the third resistor R33 (see FIG. 6) of the third detection circuit 30. The fourth region A24 is a region corresponding to the fourth resistor R24 ​​(see FIG. 5) of the second detection circuit 20 and the fourth resistor R34 (see FIG. 6) of the third detection circuit 30.

[0167] In this embodiment, the second MR elements 50B of the second detection circuit 20 are divided and arranged in first to fourth regions A21 to A24. The third MR elements 50C of the third detection circuit 30 are divided and arranged in first to fourth regions A21 to A24.

[0168] The first to fourth regions A21 to A24 are arranged side by side along the second reference direction Ry. In the example shown in Fig. 23, the first to fourth regions A21 to A24 are arranged in the order of regions A22, A23, A21, A24 from the edge of element arrangement region A0 on the Y direction side toward the edge of element arrangement region A0 on the -Y direction side. However, in the present invention, the arrangement order of the first to fourth regions A21 to A24 is not limited to this example.

[0169] Each of the first to fourth regions A21 to A24 has a first edge and a second edge located at opposite ends in the first reference direction Rx, and a third edge and a fourth edge located at opposite ends in the second reference direction Ry. The first and second edges of each of the first to fourth regions A21 to A24 may have similar characteristics to the first and second edges A1a and A1b of the first region A1 in the first embodiment, except for the length of each of the first and second edges.

[0170] 23, a portion of the third edge and a portion of the fourth edge of each of the first to fourth regions A21-A24 may have the same characteristics as the third and fourth edges A3a, A4b of the first region A1 in the first embodiment, except for the lengths of the third and fourth edges. Alternatively, although not shown, the entire third edge and the entire fourth edge of each of the first to fourth regions A21-A24 may have the same characteristics as the third and fourth edges A3a, A4b of the first region A1 in the first embodiment, except for the lengths of the third and fourth edges.

[0171] The center of gravity of the first region A21 when viewed from the Z direction, the center of gravity of the second region A22 when viewed from the Z direction, the center of gravity of the third region A23 when viewed from the Z direction, and the center of gravity of the fourth region A24 when viewed from the Z direction may be at the same position in the first reference direction Rx.

[0172] The plurality of convex surfaces 305c includes a convex surface 305c extending only in the second region A22 and a convex surface 305c extending only in the fourth region A24. The plurality of convex surfaces 305c further includes a convex surface 305c extending across the second and third regions A22, A23 but not across the first and fourth regions A21, A24, and a convex surface 305c extending across the first and fourth regions A21, A24 but not across the second and third regions A22, A23. The plurality of convex surfaces 305c further includes convex surfaces 305c that extend across the first to third regions A21 to A23 but do not extend into the fourth region A24, and convex surfaces 305c that extend across the first, third, and fourth regions A21, A23, and A24 but do not extend into the second region A22. The plurality of convex surfaces 305c further includes convex surfaces 305c that extend across the first to fourth regions A21 to A24.

[0173] The first end and the second end of each of the plurality of convex surfaces 305c are not present inside each of the first to fourth regions A21 to A24, nor between any two adjacent regions among the first to fourth regions A21 to A24.

[0174] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0175] [Fourth embodiment] Next, a fourth embodiment of the present invention will be described. A magnetic sensor device 100 in this embodiment is composed of a magnetic sensor 101 according to this embodiment and the processor 40 described in the first embodiment. The magnetic sensor 101 may have an external shape similar to that of the first chip 2 or the second chip 3 in the first embodiment.

[0176] The configuration of the magnetic sensor 101 according to this embodiment will be described below with reference to Figs. 24 to 27. Fig. 24 is a functional block diagram showing the configuration of the magnetic sensor device 100 according to this embodiment. Fig. 25 is a circuit diagram showing the circuit configuration of a first detection circuit according to this embodiment. Fig. 26 is a circuit diagram showing the circuit configuration of a second detection circuit according to this embodiment. Fig. 27 is a circuit diagram showing the circuit configuration of a third detection circuit according to this embodiment.

[0177] The magnetic sensor 101 includes a first detection circuit 110, a second detection circuit 120, and a third detection circuit 130. Each of the first to third detection circuits 110, 120, and 130 includes a plurality of MR elements.

[0178] The first detection circuit 110 is configured to detect a component of the target magnetic field parallel to the U direction and generate first detection signals S111, S112 corresponding to this component. The second detection circuit 120 is configured to detect a component of the target magnetic field parallel to the V direction and generate second detection signals S121, S122 corresponding to this component. The third detection circuit 130 is configured to detect a component of the target magnetic field parallel to the Z direction and generate third detection signals S131, S132 corresponding to this component.

[0179] The circuit configuration of the first detection circuit 110 is basically the same as the circuit configuration of the first detection circuit 10 in the first embodiment. In Fig. 25, the first to fourth resistance units R11, R12, R13, and R14 of the first detection circuit 10 are indicated by the symbols R111, R112, R113, and R114, respectively.

[0180] The circuit configuration of the second detection circuit 120 is basically the same as the circuit configuration of the second detection circuit 20 in the first embodiment. In Fig. 26, the first to fourth resistance units R21, R22, R23, and R24 of the second detection circuit 20 are indicated by the symbols R121, R122, R123, and R124, respectively.

[0181] The circuit configuration of the third detection circuit 130 is basically the same as the circuit configuration of the third detection circuit 30 in the first embodiment. In Fig. 27, the first to fourth resistance units R31, R32, R33, and R34 of the third detection circuit 30 are indicated by the symbols R131, R132, R133, and R134, respectively.

[0182] The resistance portions R111 to R114, R121 to R124, and R131 to R134 are each composed of a plurality of MR elements. Hereinafter, the plurality of MR elements of the magnetic sensor 101 will be denoted by the reference numeral 150. The configuration of the MR element 150 may be the same as the configuration of the MR element 50 described in the first embodiment. That is, the MR element 150 has at least a magnetization fixed layer 52, a free layer 54, and a gap layer 53 (see FIG. 11).

[0183] 25 and 26, the solid arrows represent the magnetization direction of the magnetization fixed layer 52 of the MR element 150. In the example shown in FIG. 25, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistance units R111 and R113 is the U direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistance units R112 and R114 is the −U direction. Furthermore, the free layer 54 of each of the multiple MR elements 150 in the first detection circuit 110 has shape anisotropy in which the magnetization easy axis direction is parallel to the V direction.

[0184] 26, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistor units R121 and R123 is the V direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistor units R122 and R124 is the −V direction. Furthermore, the free layer 54 of each of the multiple MR elements 150 in the second detection circuit 120 has shape anisotropy in which the direction of the easy axis of magnetization is parallel to the U direction.

[0185] The free layer 54 of each of the multiple MR elements 150 in the third detection circuit 130 has shape anisotropy in which the magnetization easy axis direction is parallel to the V direction. The magnetization direction of the magnetization fixed layer 52 in the third detection circuit 130 will be described later.

[0186] Next, the specific structure of the magnetic sensor 101 will be described. The magnetic sensor 101 includes a substrate 140 having an upper surface 140a, a first portion including the first detection circuit 110, a second portion including the second detection circuit 120, and a third portion including the third detection circuit 130. The upper surface 140a of the substrate 140 is assumed to be parallel to the XY plane. The first to third portions are formed on the substrate 140. The structures of the first portion and the second portion are similar to those of the first chip 2 (excluding the substrate 201) described in the first embodiment. The multiple MR elements 150 included in the first portion each have a shape elongated in the V direction. The multiple MR elements 150 included in the second portion each have a shape elongated in the U direction. The first and second portions may or may not include the first coil 70 described in the first embodiment.

[0187] Next, the structure of the third portion of the magnetic sensor 101 will be described with reference to Fig. 28 to Fig. 30. Fig. 28 is a plan view showing a portion of the magnetic sensor 101. Fig. 29 is a perspective view showing multiple MR elements 150 and multiple yokes. Fig. 30 is a side view showing multiple MR elements 150 and multiple yokes.

[0188] The structure of the third portion is basically the same as that of the first portion. The third portion further includes a plurality of yokes 151 each made of a soft magnetic material. Note that, of the components of the magnetic sensor 101, Fig. 28 shows the substrate 140, the plurality of MR elements 150, and the plurality of yokes 151.

[0189] Each of the plurality of yokes 151 may have a rectangular parallelepiped shape that is long in the V direction. Each of the plurality of yokes 151 is configured to receive an input magnetic field that includes an input magnetic field component parallel to the Z direction and generate an output magnetic field. The output magnetic field includes an output magnetic field component that is parallel to the first reference direction Rx and that changes depending on the input magnetic field component.

[0190] Each of the multiple yokes 151 has a first end face 151a and a second end face 151b located at opposite ends in a direction parallel to the U direction. In each of the multiple yokes 151, the first end face 151a is located at the end of the yoke 151 in the -U direction, and the second end face 151b is located at the end of the yoke 151 in the U direction. The multiple yokes 151 are also lined up in a direction parallel to the U direction.

[0191] 28 to 30, in the third portion, a plurality of MR elements 150 are arranged in a row along the first end face 151a, and a plurality of MR elements 150 are arranged in a row along the second end face 151b. Hereinafter, the plurality of MR elements 150 arranged along the first end face 151a will be denoted by reference symbol 150A, and the plurality of MR elements 150 arranged along the second end face 151b will be denoted by reference symbol 150B. In the second portion, the plurality of MR elements 150A and the plurality of MR elements 150B are arranged such that a row of MR elements 150A and a row of MR elements 150B are alternately arranged in a direction parallel to the U direction. The plurality of MR elements 150A and the plurality of MR elements 150B do not need to overlap with the plurality of yokes 151 when viewed from above.

[0192] Although not shown, the third portion further includes a plurality of first lower electrodes, a plurality of second lower electrodes, a plurality of first upper electrodes, and a plurality of second upper electrodes. The plurality of MR elements 150A are connected in series by the plurality of first lower electrodes and the plurality of first upper electrodes. The plurality of MR elements 150B are connected in series by the plurality of second lower electrodes and the plurality of second upper electrodes.

[0193] Next, the arrangement of the multiple MR elements 150 of the third detection circuit 130 will be described with reference to FIG. 31. FIG. 31 is a plan view showing an element arrangement region and multiple yokes. FIG. 31 shows a second portion of the magnetic sensor 101. The magnetic sensor 101 has an element arrangement region A100 for arranging the multiple MR elements 150 of the third detection circuit 130. The element arrangement region A100 includes a first region A101 and a second region A102. The first region A101 is an region corresponding to the first and fourth resistor units R131 and R134. The second region A102 is an region corresponding to the second and third resistor units R132 and R133. The multiple MR elements 150 of the third detection circuit 130 are arranged separately in the first and second regions A101 and A102.

[0194] Each of the first and second regions A101 and A102 has a first edge and a second edge located at opposite ends in the first reference direction Rx, and a third edge and a fourth edge located at opposite ends in the second reference direction Ry. Fig. 28 shows a portion of the first region A101. In Fig. 28, symbol A101b indicates the second edge of the first region A101, and symbol A101d indicates the fourth edge of the first region A101.

[0195] The first to fourth edges of each of the first and second regions A101, A102 may have similar characteristics to the first to fourth edges A1a-A1d of the first region A1 in the first embodiment, except for the length of each of the first to fourth edges. However, in the first and second regions A101, A102, the third reference direction, which is the direction in which each of the third and fourth edges extends, is a direction parallel to one direction between the X direction and the V direction.

[0196] Next, the multiple yokes 151 will be described in detail. When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is the U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is the -U direction. When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component received by each of the multiple MR elements 150A is the -U direction, and the direction of the output magnetic field component received by each of the multiple MR elements 150B is the U direction. In this way, the multiple yokes 151 have a structure that allows the multiple MR elements 150 to detect the component of the target magnetic field in a direction parallel to the U direction. Therefore, the multiple yokes 151 correspond to the "multiple structures" of the present invention.

[0197] The multiple yokes 151 include yokes 151 that extend across the first and second regions A101, A102, yokes 151 that extend only in the first region A101, and yokes 151 that extend only in the second region A102. Each yoke 151 has a first end and a second end located at both ends in the longitudinal direction of the yoke 151. The first end and the second end of each of the multiple yokes 151 are not located within either the first or second region A101, A102 or between the first region A101 and the second region A102.

[0198] The relationship between the yoke 151 and the first to fourth edges of each of the first and second regions A101, A102 may be similar to the relationship between the convex surface 305c and the first to fourth edges A1a to A1d of the first region A1 described in the first embodiment.

[0199] Next, the first to third detection signals in this embodiment will be described. First, the first detection signal will be briefly described. The manner in which the resistance value of each of the resistor units R111 to R114 of the first detection circuit 110 changes is the same as the manner in which the resistance value of each of the resistor units R11 to R14 of the first detection circuit 10 described in the first embodiment. The first detection circuit 110 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S111, and to generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S112.

[0200] Next, the second detection signal will be described with reference to Fig. 26. When the intensity of the component of the target magnetic field parallel to the V direction changes, the resistance values ​​of the resistors R121 to R124 of the second detection circuit 120 change such that the resistance values ​​of the resistors R121 and R123 increase while the resistance values ​​of the resistors R122 and R124 decrease, or the resistance values ​​of the resistors R121 and R123 decrease while the resistance values ​​of the resistors R122 and R124 increase. This causes a change in the potential of each of the signal output terminals E21 and E22. The second detection circuit 120 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S121 and generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S122.

[0201] Next, the third detection signal will be described with reference to Figures 27 to 31. The first resistance section R131 is composed of a plurality of MR elements 150A arranged in the first region A101. The second resistance section R132 is composed of a plurality of MR elements 150A arranged in the second region A102. The third resistance section R133 is composed of a plurality of MR elements 150B arranged in the second region A102. The fourth resistance section R134 is composed of a plurality of MR elements 150B arranged in the first region A101.

[0202] The magnetization direction of the magnetization fixed layer 52 in each of the first and fourth resistor units R131 and R134 is the U direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and third resistor units R132 and R133 is the −U direction.

[0203] When the direction of the input magnetic field component is the Z direction, the direction of the output magnetic field component received by the multiple MR elements 150A in the first and second resistor units R131 and R132 is the U direction, and the direction of the output magnetic field component received by the multiple MR elements 150B in the third and fourth resistor units R133 and R134 is the -U direction. In this case, compared to a state in which no output magnetic field component is present, the resistance values ​​of each of the multiple MR elements 150A in the first resistor unit R131 and the multiple MR elements 150B in the third resistor unit R133 decrease, and the resistance values ​​of each of the first and third resistor units R131 and R133 also decrease. Furthermore, compared to a state in which no output magnetic field component is present, the resistance values ​​of each of the MR elements 150B in the second resistor unit R132 and the multiple MR elements 150B in the fourth resistor unit R134 increase, and the resistance values ​​of the second and fourth resistor units R132 and R134 also increase.

[0204] When the direction of the input magnetic field component is the -Z direction, the direction of the output magnetic field component and the changes in the resistance values ​​of the first to fourth resistor parts R131 to R134 are opposite to when the direction of the input magnetic field component is the Z direction.

[0205] In this way, when the direction and intensity of the input magnetic field component change, the resistance values ​​of the resistors R131 to R134 of the third detection circuit 130 change such that the resistance values ​​of the resistors R131 and R133 increase while the resistance values ​​of the resistors R132 and R134 decrease, or the resistance values ​​of the resistors R131 and R133 decrease while the resistance values ​​of the resistors R132 and R134 increase. This causes a change in the potential of each of the signal output terminals E31 and E32. The third detection circuit 130 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S131 and generate a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S132.

[0206] Next, a description will be given of the operation of the processor 40 in this embodiment. In this embodiment, the processor 40 is configured to generate a first detection value Su based on the first detection signals S111 and S112, generate a second detection value Sv based on the second detection signals S121 and S122, and generate a third detection value Sz based on the third detection signals S131 and S132.

[0207] A method for generating the first to third detection values ​​Su, Sv, and Sz will be described below. The processor 40 generates the first detection value Su by performing a calculation that includes determining the difference S111-S112 between the first detection signal S111 and the first detection signal S112. The first detection value Su may be the difference S111-S112 itself, or may be the difference S111-S112 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0208] The processor 40 also generates a second detection value Sv by performing a calculation that includes determining the difference S121-S122 between the second detection signal S121 and the second detection signal S122. The second detection value Sv may be the difference S121-S122 itself, or may be the difference S121-S122 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0209] The processor 40 also generates a third detection value Sz by performing a calculation that includes determining the difference S131-S132 between the third detection signal S131 and the third detection signal S132. The third detection value Sz may be the difference S131-S132 itself, or may be the difference S131-S132 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0210] 12 to 14 and 16 to 19, the features relating to the plurality of convex surfaces 305c also apply to the plurality of yokes 151. Other configurations, actions, and effects of the present embodiment are the same as those of the first embodiment.

[0211] [Fifth embodiment] Next, a fifth embodiment of the present invention will be described. A magnetic sensor device 100 in this embodiment includes a first chip 8 instead of the first chip 2 in the first embodiment. A magnetic sensor 1 according to this embodiment is composed of the first chip 8 and a second chip 3. Although not shown, the first chip 8 has the same external shape as the second chip 3. Like the second chip 3, the first chip 8 is mounted on the reference plane 4a of the support 4 with the bottom surface of the first chip 8 facing the reference plane 4a of the support 4 (see FIGS. 1 and 2).

[0212] The configuration of the second chip 3 in this embodiment is the same as that in the first embodiment. In this embodiment, for convenience, the two detection circuits included in the second chip 3 are referred to as the third detection circuit 20 and the fourth detection circuit 30. The configurations of the third and fourth detection circuits 20 and 30 in this embodiment are the same as the configurations of the second and third detection circuits 20 and 30 in the first embodiment, respectively.

[0213] In this embodiment, for convenience, the two detection signals generated by the third detection circuit 20 are referred to as third detection signals S21 and S22, and the two detection signals generated by the fourth detection circuit 30 are referred to as fourth detection signals S31 and S32. The third detection signals S21 and S22 and the fourth detection signals S31 and S32 in this embodiment are the same as the second detection signals S21 and S22 and the third detection signals S31 and S32 in the first embodiment, respectively.

[0214] In addition, in this embodiment, for convenience, the multiple MR elements 50 constituting the third detection circuit 20 are referred to as multiple third MR elements 50B, and the multiple MR elements 50 constituting the fourth detection circuit 30 are referred to as multiple fourth MR elements 50C. The multiple third MR elements 50B and the multiple fourth MR elements 50C in this embodiment are the same as the multiple second MR elements 50B and the multiple third MR elements 50C in the first embodiment, respectively.

[0215] The magnetic sensor 1 according to this embodiment includes third and fourth detection circuits 20 and 30. Moreover, the magnetic sensor 1 according to this embodiment includes a first detection circuit 240, a second detection circuit 250, and a first coil 280, instead of the first detection circuit 10 and the first coil 70 in the first embodiment.

[0216] The first and second detection circuits 240, 250 will be described below with reference to Figs. 32 to 36. Fig. 32 is a functional block diagram showing the configuration of the magnetic sensor device 100. Fig. 33 is a circuit diagram showing the circuit configuration of the first detection circuit 240. Fig. 34 is a circuit diagram showing the circuit configuration of the second detection circuit 250. Fig. 35 is a plan view showing a part of the first chip 8. Fig. 36 is a cross-sectional view showing a part of the first chip 8.

[0217] As shown in FIG. 36, the W4 direction and the W5 direction are defined as follows. The W4 direction is a direction rotated from the U direction toward the -Z direction. The W5 direction is a direction rotated from the U direction toward the Z direction. In this embodiment, the W4 direction is particularly defined as U The W4 direction is defined as the direction rotated by γ from the W4 direction toward the -Z direction, and the W5 direction is defined as the direction rotated by γ from the U direction toward the Z direction. Note that γ is an angle greater than 0° and less than 90°. γ may be equal to β described in the first embodiment. Furthermore, the direction opposite to the W4 direction is defined as the -W4 direction, and the direction opposite to the W5 direction is defined as the -W5 direction. The W4 direction and the W5 direction are each perpendicular to the V direction.

[0218] The first detection circuit 240 is configured to detect a component of the target magnetic field parallel to the W4 direction and generate first detection signals S41, S42 corresponding to this component. The second detection circuit 250 is configured to detect a component of the target magnetic field parallel to the W5 direction and generate second detection signals S51, S52 corresponding to this component.

[0219] 33, the first detection circuit 240 includes a power supply terminal V4, a ground terminal G4, signal output terminals E41 and E42, a first resistor unit R41, a second resistor unit R42, a third resistor unit R43, and a fourth resistor unit R44. The multiple MR elements of the first detection circuit 240 configure the first to fourth resistor units R41, R42, R43, and R44.

[0220] The first resistor R41 is provided between the power supply terminal V4 and the signal output terminal E41. The second resistor R42 is provided between the signal output terminal E41 and the ground terminal G4. The third resistor R43 is provided between the signal output terminal E42 and the ground terminal G4. The fourth resistor R44 is provided between the power supply terminal V4 and the signal output terminal E42.

[0221] 34, the second detection circuit 250 includes a power supply terminal V5, a ground terminal G5, signal output terminals E51 and E52, a first resistor unit R51, a second resistor unit R52, a third resistor unit R53, and a fourth resistor unit R54. The multiple MR elements of the second detection circuit 250 configure the first to fourth resistor units R51, R52, R53, and R54.

[0222] The first resistor R51 is provided between the power supply terminal V5 and the signal output terminal E51. The second resistor R52 is provided between the signal output terminal E51 and the ground terminal G5. The third resistor R53 is provided between the signal output terminal E52 and the ground terminal G5. The fourth resistor R54 is provided between the power supply terminal V5 and the signal output terminal E52.

[0223] A voltage or current of a predetermined magnitude is applied to each of the power supply terminals V4 and V5, and each of the ground terminals G4 and G5 is connected to the ground.

[0224] Hereinafter, the multiple MR elements of the first detection circuit 240 will be referred to as multiple first MR elements 50D, and the multiple MR elements of the second detection circuit 250 will be referred to as multiple second MR elements 50E. Since the first and second detection circuits 240, 250 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50D and multiple second MR elements 50E. The configuration of each of the multiple first MR elements 50D and multiple second MR elements 50E is the same as the configuration of the MR element 50 described in the first embodiment.

[0225] 33 and 34, the solid arrows represent the magnetization direction of the magnetization fixed layer 52 (see FIG. 11) of the MR element 50. The open arrows represent the magnetization direction of the free layer 54 (see FIG. 11) of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0226] In the example shown in FIG. 33, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistor units R41, R43 is the W4 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistor units R42, R44 is the −W4 direction. The free layer 54 of each of the multiple first MR elements 50D has shape anisotropy in which the magnetization easy axis direction is parallel to the V direction. When no target magnetic field is applied to the first MR element 50D, the magnetization direction of the free layer 54 in each of the first and second resistor units R41, R42 is the V direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor units R43, R44 is the −V direction.

[0227] In the example shown in FIG. 34, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistor units R51 and R53 is the W5 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistor units R52 and R54 is the −W5 direction. The free layer 54 of each of the second MR elements 50E has shape anisotropy such that the magnetization easy axis direction is parallel to the V direction. When no target magnetic field is applied to the second MR element 50E, the magnetization direction of the free layer 54 in each of the first and second resistor units R51 and R52 is the V direction. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor units R53 and R54 is the −V direction.

[0228] In this embodiment, the magnetic field generator includes a first coil 280 that applies a magnetic field in a predetermined direction to the free layers 54 of the plurality of first MR elements 50D and the plurality of second MR elements 50E, instead of the first coil 70 in the first embodiment. Also, the first chip 8 includes the first coil 280.

[0229] The specific structure of the first chip 8 will be described in detail below. Fig. 36 shows a portion of a cross section taken along line 36-36 in Fig. 35. The first chip 8 includes a substrate 321 having an upper surface 321a, insulating layers 322, 323, 324, 325, 327, 328, 329, and 330, a plurality of lower electrodes 61D, a plurality of lower electrodes 61E, a plurality of upper electrodes 62D, a plurality of upper electrodes 62E, a plurality of lower coil elements 281, and a plurality of upper coil elements 282. Note that Fig. 36 shows the insulating layer 325, a plurality of first MR elements 50D, a plurality of second MR elements 50E, and a plurality of upper coil elements 282, among the components of the first chip 8.

[0230] The insulating layer 325 also has a plurality of convex surfaces 325c, each of which includes a first inclined surface 325a and a second inclined surface 325b.

[0231] The structure of the first chip 8 may be symmetrical to the structure of the second chip 3 with respect to the YZ plane. In this case, if the components of the second chip 3 are replaced with the components of the first chip 8, the structure of the first chip 8 will be explained. Specifically, the components of the second chip 3 are replaced with the components of the first chip 8 as follows. The plurality of third MR elements 50B and the plurality of fourth MR elements 50C (the plurality of second MR elements 50B and the plurality of third MR elements 50C in the first embodiment) of the second chip 3 are replaced with the plurality of first MR elements 50D and the plurality of second MR elements 50E, respectively. The plurality of bottom electrodes 61C and the plurality of bottom electrodes 61D of the second chip 3 are replaced with the plurality of bottom electrodes 61D and the plurality of bottom electrodes 61E, respectively. The plurality of upper electrodes 62C and the plurality of upper electrodes 62D of the second chip 3 are respectively replaced with the plurality of upper electrodes 62D and the plurality of upper electrodes 62E. The plurality of lower coil elements 81 and the plurality of upper coil elements 82 of the second chip 3 are respectively replaced with the plurality of lower coil elements 281 and the plurality of upper coil elements 282. The insulating layers 302 to 305 and 307 to 310 of the second chip 3 are respectively replaced with the insulating layers 322 to 325 and 327 to 330.

[0232] Furthermore, the plurality of convex surfaces 305c, the plurality of first inclined surfaces 305a, and the plurality of second inclined surfaces 305b of the second chip 3 are replaced with the plurality of convex surfaces 325c, the plurality of first inclined surfaces 325a, and the plurality of second inclined surfaces 325b, respectively. In the first embodiment, the characteristics of the plurality of convex surfaces 305c, the plurality of first inclined surfaces 305a, and the plurality of second inclined surfaces 305b are described using the U direction, V direction, -V direction, W1 direction, W2 direction, and VZ cross section. As described above, when the components of the second chip 3 are replaced with the components of the first chip 8, the U direction, V direction, -V direction, W1 direction, W2 direction, and VZ cross section are replaced with the V direction, U direction, -U direction, W4 direction, W5 direction, and UZ cross section, respectively.

[0233] Next, the arrangement of the plurality of first MR elements 50D and the plurality of second MR elements 50E will be described. The first chip 8 has an element arrangement region for arranging the plurality of first MR elements 50D and the plurality of second MR elements 50E. The element arrangement region of the first chip 8 includes a first region corresponding to the first resistor portions R41 and R51, a second region corresponding to the second resistor portions R42 and R52, a third region corresponding to the third resistor portions R43 and R53, and a fourth region corresponding to the fourth resistor portions R44 and R54.

[0234] The arrangement of the first to fourth regions of the element arrangement region of the first chip 8 may be the same as the arrangement of the first to fourth regions A1 to A4 of the element arrangement region A0 of the second chip 3 in the first embodiment shown in Fig. 12. Alternatively, the arrangement of the first to fourth regions of the element arrangement region of the first chip 8 may be symmetrical to the arrangement of the first to fourth regions A1 to A4 of the element arrangement region A0 of the second chip 3 with respect to the YZ plane.

[0235] Furthermore, the shapes of the first to fourth regions of the element placement area of ​​the first chip 8 may be symmetrical to the shapes of the first to fourth regions A1 to A4 of the element placement area A0 of the second chip 3, with the YZ plane as the center.

[0236] The arrangement of the multiple first MR elements 50D and the multiple second MR elements 50E in each of the first to fourth regions of the element placement area of ​​the first chip 8 may be symmetrical with the arrangement of the multiple third MR elements 50B and the multiple fourth MR elements 50C (the multiple second MR elements 50B and the multiple third MR elements 50C in the first embodiment) in each of the first to fourth regions A1 to A4 of the element placement area A0 of the second chip 3, with the YZ plane as the center.

[0237] Next, the first detection signals S41 and S42 will be described with reference to Fig. 33. When the intensity of the component of the target magnetic field parallel to the W4 direction changes, the resistance values ​​of the resistors R41 to R44 of the first detection circuit 240 change such that the resistance values ​​of the resistors R41 and R43 increase while the resistance values ​​of the resistors R42 and R44 decrease, or the resistance values ​​of the resistors R41 and R43 decrease while the resistance values ​​of the resistors R42 and R44 increase. This causes a change in the potential of each of the signal output terminals E41 and E42. The first detection circuit 240 is configured to generate a signal corresponding to the potential of the signal output terminal E41 as the first detection signal S41 and generate a signal corresponding to the potential of the signal output terminal E42 as the first detection signal S42.

[0238] Next, the second detection signals S51 and S52 will be described with reference to Fig. 34. When the intensity of the component of the target magnetic field parallel to the W5 direction changes, the resistance values ​​of the resistors R51 to R54 of the second detection circuit 250 change such that the resistance values ​​of the resistors R51 and R53 increase while the resistance values ​​of the resistors R52 and R54 decrease, or the resistance values ​​of the resistors R51 and R53 decrease while the resistance values ​​of the resistors R52 and R54 increase. This causes a change in the potential of each of the signal output terminals E51 and E52. The second detection circuit 250 is configured to generate a signal corresponding to the potential of the signal output terminal E51 as the second detection signal S51 and generate a signal corresponding to the potential of the signal output terminal E52 as the second detection signal S52.

[0239] Next, the operation of the processor 40 in this embodiment will be described. In this embodiment, the processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S41, S42 and the second detection signals S51, S52. The first detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the U direction. The second detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Z direction. Hereinafter, the first detection value will be represented by the symbol Su1, and the second detection value will be represented by the symbol Sz1.

[0240] The processor 40 is further configured to generate a third detection value and a fourth detection value based on the third detection signals S21, S22 and the fourth detection signals S31, S32. The third detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the V direction. The fourth detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Z direction. Hereinafter, the third detection value will be represented by the symbol Sv1, and the fourth detection value will be represented by the symbol Sz2.

[0241] The method for generating the first and second detection values ​​Su1 and Sz1 is the same as the method for generating the second and third detection values ​​Sv and Sz described in the first embodiment. If Sv and Sz in the description of the method for generating the second and third detection values ​​Sv and Sz are replaced with Su1 and Sz1, respectively, the description becomes a method for generating the first and second detection values ​​Su1 and Sz1.

[0242] The method for generating the third and fourth detection values ​​Sv1, Sz2 is the same as the method for generating the second and third detection values ​​Sv, Sz described in the first embodiment. If Sv and Sz in the description of the method for generating the second and third detection values ​​Sv, Sz are replaced with Sv1 and Sz2, respectively, the description of the method for generating the third and fourth detection values ​​Sv1, Sz2 will be completed.

[0243] In the present embodiment, the processor 40 may perform a calculation to obtain the average of the second and third detection values ​​Sz1 and Sz2. In this case, the processor 40 may generate the value obtained by the calculation as a detection value corresponding to the component of the target magnetic field in a direction parallel to the Z direction.

[0244] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0245] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the magnetic sensor of the present invention may be an integrated device including a plurality of chips.

[0246] As described above, the magnetic sensor of the present invention includes a plurality of resistance sections formed by a plurality of magnetoresistive elements, and a plurality of structures each having a structure for causing the plurality of magnetoresistive elements to detect a specific component of a target magnetic field. The plurality of magnetoresistive elements are arranged in a plurality of regions corresponding to the plurality of resistance sections. The plurality of structures includes a structure extending across at least two of the plurality of regions.

[0247] In the magnetic sensor of the present invention, the plurality of structures may further include a structure that extends in only one of the plurality of regions.

[0248] In the magnetic sensor of the present invention, the multiple regions may include a first specific region, a second specific region, and a third specific region. The multiple structures may include a first structure extending only in the first specific region, a second structure extending across the first specific region and the second specific region but not the third specific region, and a third structure extending across the first specific region, the second specific region, and the third specific region. The multiple regions may further include a fourth specific region. The multiple structures may further include a fourth structure extending across the first specific region, the second specific region, the third specific region, and the fourth specific region. The second structure and the third structure may not extend into the fourth specific region.

[0249] In the magnetic sensor of the present invention, the multiple regions may be arranged to line up along a first reference direction. Each of the multiple structures may extend in a direction intersecting the first reference direction at an angle other than 90°. An element arrangement region that includes the multiple regions may have a dimension in the first reference direction that is larger than a dimension in a second reference direction that is orthogonal to the first reference direction. Each of the multiple regions may have a dimension in the first reference direction that is smaller than a dimension in the second reference direction that is orthogonal to the first reference direction.

[0250] In addition, in the magnetic sensor of the present invention, the multiple regions may include a first specific region and a second specific region arranged in a row along a first reference direction, and a third specific region and a fourth specific region arranged respectively ahead of the first specific region and the second specific region in a direction perpendicular to the first reference direction.

[0251] In the magnetic sensor of the present invention, the plurality of structures may each include a plurality of yokes made of a soft magnetic material, and the plurality of magnetoresistive elements may be arranged in a plurality along each of the plurality of yokes.

[0252] In the magnetic sensor of the present invention, each of the plurality of structures may include a plurality of inclined surfaces inclined with respect to a reference plane, and the plurality of magnetoresistive elements may be arranged on each of the plurality of inclined surfaces.

[0253] The magnetic sensor of the present invention may further include a power supply terminal, a ground terminal, a first output terminal, and a second output terminal. The plurality of resistive elements may include a first resistive element provided between the power supply terminal and the first output terminal, a second resistive element provided between the ground terminal and the first output terminal, a third resistive element provided between the ground terminal and the second output terminal, and a fourth resistive element provided between the power supply terminal and the second output terminal. The plurality of regions may include a first region, a second region, a third region, and a fourth region. The plurality of magnetoresistive elements may include a plurality of first magnetoresistive elements arranged in the first region, a plurality of second magnetoresistive elements arranged in the second region, a plurality of third magnetoresistive elements arranged in the third region, and a plurality of fourth magnetoresistive elements arranged in the fourth region. The plurality of first magnetoresistance effect elements, the plurality of second magnetoresistance effect elements, the plurality of third magnetoresistance effect elements, and the plurality of fourth magnetoresistance effect elements may respectively constitute a first resistance section, a second resistance section, a third resistance section, and a fourth resistance section.

[0254] In the magnetic sensor of the present invention, the multiple regions may include four first regions and four second regions. The multiple magnetoresistance effect elements may include a multiple of first magnetoresistance effect elements divided and arranged in the four first regions, a multiple of second magnetoresistance effect elements divided and arranged in the four second regions, and a multiple of third magnetoresistance effect elements divided and arranged in the four second regions. The multiple structures may be present in the four second regions but not in the four first regions. The multiple structures may include a multiple of first inclined surfaces each inclined with respect to a reference plane and a multiple of second inclined surfaces each inclined in a direction different from each of the multiple first inclined surfaces. The multiple first magnetoresistance effect elements may be arranged on a plane parallel to the reference plane. The multiple second magnetoresistance effect elements may be arranged in plurals on each of the multiple first inclined surfaces. The plurality of third magnetoresistance effect elements may be arranged on each of the plurality of second inclined surfaces. The plurality of first magnetoresistance effect elements may constitute a first detection circuit that detects a component of the target magnetic field in a first direction parallel to the reference plane and generates a first detection signal. The plurality of second magnetoresistance effect elements may constitute a second detection circuit that detects a component of the target magnetic field in a second direction tilted with respect to both the reference plane and the direction perpendicular to the reference plane and generates a second detection signal. The plurality of third magnetoresistance effect elements may constitute a third detection circuit that detects a component of the target magnetic field in a third direction tilted with respect to both the reference plane and the direction perpendicular to the reference plane and generates a third detection signal. In this case, the magnetic sensor of the present invention may further include a processor. The processor may generate a first detection value corresponding to a component of the target magnetic field in a first direction based on the first detection signal, and may generate a second detection value corresponding to a component of the target magnetic field in a direction parallel to the reference plane and perpendicular to the first direction, and a third detection value corresponding to a component of the target magnetic field in a direction perpendicular to the reference plane based on the second detection signal and the third detection signal.

[0255] In the magnetic sensor of the present invention, the multiple regions may include four first regions and four second regions. The multiple magnetoresistance effect elements may include a multiple of first magnetoresistance effect elements divided and arranged in the four first regions, a multiple of second magnetoresistance effect elements divided and arranged in the four first regions, a multiple of third magnetoresistance effect elements divided and arranged in the four second regions, and a multiple of fourth magnetoresistance effect elements divided and arranged in the four second regions. The multiple structures may include a multiple of first structures present in the four first regions and a multiple of second structures present in the four second regions. Each of the multiple first structures may include a multiple of first inclined surfaces inclined with respect to a reference plane and a multiple of second inclined surfaces inclined in a direction different from each of the multiple first inclined surfaces. The plurality of second structures may include a plurality of third inclined surfaces inclined with respect to a reference plane and a plurality of fourth inclined surfaces inclined in a direction different from each of the plurality of third inclined surfaces. The plurality of first magnetoresistance effect elements may be arranged in plural on each of the plurality of first inclined surfaces. The plurality of second magnetoresistance effect elements may be arranged in plural on each of the plurality of second inclined surfaces. The plurality of third magnetoresistance effect elements may be arranged in plural on each of the plurality of third inclined surfaces. The plurality of fourth magnetoresistance effect elements may be arranged in plural on each of the plurality of fourth inclined surfaces. The plurality of first magnetoresistance effect elements may constitute a first detection circuit that detects a component of the target magnetic field in a first direction inclined with respect to each of the reference plane and the direction perpendicular to the reference plane, and generates a first detection signal. The plurality of second magnetoresistance effect elements may constitute a second detection circuit that detects components of the target magnetic field in a second direction tilted with respect to both the reference plane and the direction perpendicular to the reference plane, and generates a second detection signal. The plurality of third magnetoresistance effect elements may constitute a third detection circuit that detects components of the target magnetic field in a third direction tilted with respect to both the reference plane and the direction perpendicular to the reference plane, and generates a third detection signal. The plurality of fourth magnetoresistance effect elements may constitute a fourth detection circuit that detects components of the target magnetic field in a fourth direction tilted with respect to both the reference plane and the direction perpendicular to the reference plane, and generates a fourth detection signal.In this case, the magnetic sensor of the present invention may further include a processor that generates, based on the first detection signal and the second detection signal, a first detection value corresponding to a component of the target magnetic field in a fifth direction parallel to the reference plane and a second detection value corresponding to a component of the target magnetic field in a direction perpendicular to the reference plane, and that generates, based on the third detection signal and the fourth detection signal, a third detection value corresponding to a component of the target magnetic field in a sixth direction parallel to the reference plane and orthogonal to the fifth direction and a fourth detection value corresponding to the component of the target magnetic field in a direction perpendicular to the reference plane. [Explanation of symbols]

[0256] 1...magnetic sensor, 2...first chip, 3...second chip, 4...support, 6, 7...adhesive, 10...first detection circuit, 20...second detection circuit, 30...third detection circuit, 40...processor, 50...MR element, 50A...first MR element, 50B...second MR element, 50C...third MR element, 51...antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 61, 61A, 61B, 61C...bottom electrode, 62, 6 2A, 62B, 62C...upper electrode, 70...first coil, 71...lower coil element, 72...upper coil element, 80...second coil, 81...lower coil element, 82...upper coil element, 100...magnetic sensor device, 201, 301...substrate, 201a, 301a...upper surface, 202-204, 207-210, 302-305, 307-310...insulating layer, 305a...first inclined surface, 305b...second inclined surface, 305c...convex surface.

Claims

1. a plurality of resistance sections each composed of a plurality of magnetoresistive effect elements; a plurality of yokes each having a structure for causing the plurality of magnetoresistive elements to detect a specific component of a target magnetic field; A power supply terminal and A ground end and a first output end; Each of the plurality of yokes is made of a soft magnetic material, the plurality of magnetoresistive effect elements are divided into a plurality of regions corresponding to the plurality of resistance portions and arranged; the plurality of resistor units include a first resistor unit provided between the power supply terminal and the first output terminal, and a second resistor unit provided between the ground terminal and the first output terminal, the plurality of regions include a first region and a second region, the plurality of magnetoresistive effect elements include a plurality of first magnetoresistive effect elements arranged in the first region and a plurality of second magnetoresistive effect elements arranged in the second region; the plurality of first magnetoresistive effect elements and the plurality of second magnetoresistive effect elements respectively constitute the first resistance portion and the second resistance portion; The magnetic sensor, wherein the plurality of yokes include a yoke extending across the first region and the second region.

2. 2. The magnetic sensor according to claim 1, wherein the plurality of yokes further includes a yoke that extends only in the first region or the second region.

3. The first region and the second region are arranged so as to be aligned along a first reference direction, 2. The magnetic sensor according to claim 1, wherein each of the plurality of yokes extends in a direction intersecting the first reference direction at an angle other than 90 degrees.

4. 4. The magnetic sensor according to claim 3, wherein the element placement region, which is a region including the plurality of regions, has a dimension in the first reference direction that is larger than a dimension in a second reference direction that is perpendicular to the first reference direction.

5. 4. The magnetic sensor according to claim 3, wherein each of the plurality of regions has a dimension in the first reference direction that is smaller than a dimension in a second reference direction that is perpendicular to the first reference direction.

6. 2. The magnetic sensor according to claim 1, wherein the plurality of magnetoresistive elements are arranged in a plurality along each of the plurality of yokes.

7. A plurality of resistance sections each composed of a plurality of magnetoresistive effect elements; a plurality of inclined surfaces each having a structure for causing the plurality of magnetoresistive effect elements to detect a specific component of a target magnetic field; each of the plurality of inclined surfaces is inclined relative to a reference plane; the plurality of magnetoresistive effect elements are divided into a plurality of regions corresponding to the plurality of resistance portions and arranged; the plurality of inclined surfaces include an inclined surface extending across at least two of the plurality of regions; the plurality of regions includes four first regions and four second regions; the plurality of magnetoresistive effect elements include a plurality of first magnetoresistive effect elements divided and arranged in the four first regions, a plurality of second magnetoresistive effect elements divided and arranged in the four second regions, and a plurality of third magnetoresistive effect elements divided and arranged in the four second regions; the plurality of inclined surfaces are present in the four second regions but not in the four first regions; the plurality of inclined surfaces include a plurality of first inclined surfaces each inclined with respect to the reference plane and a plurality of second inclined surfaces each inclined in a direction different from each of the plurality of first inclined surfaces, the plurality of first magnetoresistive elements are arranged on a plane parallel to the reference plane, a plurality of the second magnetoresistance effect elements are arranged on each of the plurality of first inclined surfaces; the plurality of third magnetoresistance effect elements are arranged on each of the plurality of second inclined surfaces; the plurality of first magnetoresistance effect elements constitute a first detection circuit that detects a component of the target magnetic field in a first direction parallel to the reference plane and generates a first detection signal; the plurality of second magnetoresistance effect elements constitute a second detection circuit that detects components of the target magnetic field in a second direction inclined with respect to both the reference plane and a direction perpendicular to the reference plane, and generates a second detection signal; A magnetic sensor characterized in that the plurality of third magnetoresistance effect elements constitute a third detection circuit that detects components of the target magnetic field in a third direction that is inclined with respect to each of the reference plane and a direction perpendicular to the reference plane, and generates a third detection signal.

8. further comprising a processor; The magnetic sensor of claim 7, wherein the processor generates a first detection value corresponding to a component of the target magnetic field in the first direction based on the first detection signal, and generates a second detection value corresponding to a component of the target magnetic field in a direction parallel to the reference plane and perpendicular to the first direction based on the second detection signal and the third detection signal, and a third detection value corresponding to a component of the target magnetic field in a direction perpendicular to the reference plane.

9. A plurality of resistance sections each composed of a plurality of magnetoresistive effect elements; a plurality of inclined surfaces each having a structure for causing the plurality of magnetoresistive effect elements to detect a specific component of a target magnetic field; each of the plurality of inclined surfaces is inclined relative to a reference plane; the plurality of magnetoresistive effect elements are divided into a plurality of regions corresponding to the plurality of resistance portions and arranged; the plurality of inclined surfaces include an inclined surface extending across at least two of the plurality of regions; the plurality of regions includes four first regions and four second regions; the plurality of magnetoresistive effect elements include a plurality of first magnetoresistive effect elements divided and arranged in the four first regions, a plurality of second magnetoresistive effect elements divided and arranged in the four first regions, a plurality of third magnetoresistive effect elements divided and arranged in the four second regions, and a plurality of fourth magnetoresistive effect elements divided and arranged in the four second regions; the plurality of inclined surfaces include a plurality of first inclined surfaces and a plurality of second inclined surfaces present in the four first regions, and a plurality of third inclined surfaces and a plurality of fourth inclined surfaces present in the four second regions; the plurality of first inclined surfaces are each inclined with respect to the reference plane; the plurality of second inclined surfaces are inclined in directions different from the directions of the plurality of first inclined surfaces, the plurality of third inclined surfaces are each inclined with respect to the reference plane; the plurality of fourth inclined surfaces are inclined in directions different from the directions of the plurality of third inclined surfaces, a plurality of the first magnetoresistance effect elements are arranged on each of the plurality of first inclined surfaces; the plurality of second magnetoresistance effect elements are arranged on each of the plurality of second inclined surfaces; the plurality of third magnetoresistance effect elements are arranged on each of the plurality of third inclined surfaces, the plurality of fourth magnetoresistance effect elements are arranged on each of the plurality of fourth inclined surfaces, the plurality of first magnetoresistance effect elements constitute a first detection circuit that detects a component of the target magnetic field in a first direction inclined with respect to each of the reference plane and a direction perpendicular to the reference plane, and generates a first detection signal; the plurality of second magnetoresistance effect elements constitute a second detection circuit that detects components of the target magnetic field in a second direction inclined with respect to both the reference plane and a direction perpendicular to the reference plane, and generates a second detection signal; the plurality of third magnetoresistance effect elements constitute a third detection circuit that detects components of the target magnetic field in a third direction inclined with respect to both the reference plane and a direction perpendicular to the reference plane, and generates a third detection signal; A magnetic sensor characterized in that the multiple fourth magnetoresistance effect elements constitute a fourth detection circuit that detects components of the target magnetic field in a fourth direction that is inclined with respect to each of the reference plane and a direction perpendicular to the reference plane, and generates a fourth detection signal.

10. further comprising a processor; The magnetic sensor of claim 9, characterized in that the processor generates, based on the first detection signal and the second detection signal, a first detection value corresponding to a component of the target magnetic field in a fifth direction parallel to the reference plane and a second detection value corresponding to a component of the target magnetic field in a direction perpendicular to the reference plane, and, based on the third detection signal and the fourth detection signal, a third detection value corresponding to a component of the target magnetic field in a sixth direction parallel to the reference plane and perpendicular to the fifth direction and a fourth detection value corresponding to a component of the target magnetic field in a direction perpendicular to the reference plane.

11. A magnetic sensor described in any one of claims 7 to 10, characterized in that the multiple magnetoresistance effect elements are arranged multiple times on each of the multiple inclined surfaces.

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