electronic machines

Abstract

To provide an electronic apparatus with which various modes of display are possible, and with which various modes of operation are possible.SOLUTION: Provided is an electronic apparatus comprising a display device and a first to a third surface, the first surface having a region provided adjoining the second surface, the second surface having a region provided adjoining the third surface, the first surface having a region provided facing the third surface. The display device has a first to a third display region, the first display region having a region provided so as to overlap the first surface, the second display region having a region provided so as to overlap the second surface, the third display region having a region provided so as to overlap the third surface, the first display region having a larger area than the third display region.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device capable of displaying on a curved surface. Alternatively, one aspect of the present invention relates to a display device capable of displaying on a curved surface. This relates to a display device capable of displaying on multiple different surfaces, or a display device capable of displaying on a curved surface. The present invention relates to electronic devices, light-emitting devices, lighting devices, or methods for manufacturing the same, which include the above. Electronic device, light-emitting device, lighting device, or so which have a display device capable of displaying on a number of different sides Regarding the manufacturing method of these.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field relates to a product, method, or method of manufacture. Or, the present invention. One aspect of this is a process, machine, manufacture, or composition. This relates to matter. Therefore, the invention disclosed more specifically in this specification One aspect of the technical field is semiconductor devices, display devices, light-emitting devices, liquid crystal display devices, and energy storage devices. Examples include devices, memory devices, methods for driving them, or methods for manufacturing them. It is possible. [Background technology]

[0003] In recent years, display devices have been expected to have applications in a variety of fields, and diversification is required. For example, mobile information terminals such as smartphones and tablet devices equipped with touch panels are thin Standardization, performance enhancement, and multi-functionality are progressing.

[0004] Furthermore, Patent Document 1 describes an organic EL element and a switching element on a film substrate. A flexible active-matrix light-emitting device equipped with transistors is disclosed. ru.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention has an object of providing a novel electronic device. Or, one aspect of the present invention has an object of providing an electronic device capable of various displays. Or, one aspect of the present invention has an object of providing an electronic device capable of various operations. Or one aspect of the present invention has an object of providing a display device (display panel) applicable to such an electronic device Or, one aspect of the present invention has an object of providing a novel display device or the like as one of the problems.

[0007] Or, one aspect of the present invention has an object of providing an electronic device or the like that can capture an appropriate image as one of the problems. Or, one aspect of the present invention has an object of providing an electronic device or the like that can irradiate illumination on a subject as one of the problems. Or, one aspect of the present invention has an object of providing an electronic device or the like that can easily replace a battery as one of the problems. Or, one aspect of the present invention has an object of providing an electronic device or the like that is easy to operate as one of the problems. Or, one aspect of the present invention has an object of providing an electronic device or the like that can confirm a shooting situation for a subject as one of the problems. Or, one aspect of the present invention has an object of providing an electronic device or the like that is easy to perform wireless communication as one of the problems. Or, one aspect of the present invention has an object of providing an electronic device or the like that can make a good sound as one of the problems Or, one aspect of the present invention is to provide an electronic device that can be bent or expanded. One of the problems is to provide such an electronic device.

[0008] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not required to solve all of these problems. Also, problems other than those described above will become apparent from the description in the detailed specification and the like, and it is possible to extract problems other than those described above from the description in the detailed specification and the like. **Means for Solving the Problems**

[0009] Therefore, one aspect of the present invention is an electronic device having a display device and first to third surfaces, where the first surface has a region provided so as to contact the second surface, the second surface has a region provided so as to contact the third surface, the first surface has a region provided so as to face the third surface, the display device has first to third display regions, the first display region has a region provided so as to overlap the first surface, the second display region has a region provided so as to overlap the second surface, the third display region has a region provided so as to overlap the third surface, and the first display region has a larger area than the third display region. The electronic device is characterized in that it has an area.

[0010] Or, one aspect of the present invention is an electronic device having a display device, an input device, and first to third surfaces, where the first surface has a region provided so as to contact the second surface, the second surface has a region provided so as to contact the third surface, the first surface has a region provided so as to face the third surface, the display device has first to third display regions, The first display area has an area that overlaps with the first surface, and the second surface The display area has an area that overlaps with the second surface, and the third display area is the third It has an area that overlaps with the surface, and the input device overlaps with the first display area. The area provided in the first place, the area provided so as to overlap with the second display area, and the third The display area has an area that overlaps with the display area of ​​the third table. This electronic device is characterized by having a larger area than the indicated region.

[0011] Alternatively, one aspect of the present invention is an electronic device having a display device and a first to third surface. The first surface has a region that is in contact with the second surface, and the second surface is It has a region that is in contact with the third surface, and the first surface is opposite to the third surface. The display device has a region provided in such a way, and the display device has a first to third display region, and the first The display area has an area that overlaps with the first surface, and the second display area is the The third display area has a region that overlaps with the second surface, and the third display area overlaps with the third surface. The display device has a region provided for this purpose, and in the first to third display regions, touch It functions as a sensor, and the first display area has a larger area than the third display area. This is an electronic device characterized by having [a certain feature].

[0012] Alternatively, one aspect of the present invention relates to a display device, an image sensor, and an electric device having first to third surfaces. A sub-device, wherein the first surface has an area that is in contact with the second surface, The second surface has a region that is in contact with the third surface, and the first surface is in contact with the third surface The display device has areas arranged opposite to it, and the display device has first to third display areas The first display area has an area that overlaps with the first surface, and the second surface The display area has an area that overlaps with the second surface, and the third display area is the third The display device has an area that overlaps with the surface, and in the first display area, The display device has the function of displaying a first image obtained by an image sensor, In the second display area, the second image obtained by the image sensor can be displayed. This is an electronic device characterized by having a specific function.

[0013] Alternatively, one aspect of the present invention is an electronic device having the above configuration, wherein the second surface is a side surface. It is an electronic device characterized by the following:

[0014] Alternatively, one aspect of the present invention relates to a display device, an image sensor, and an electric device having first to third surfaces. A method for driving a sub-device, wherein the first surface is provided in contact with the second surface, and the region is provided in contact with the second surface. The first surface has a region that is in contact with the third surface, and the second surface has a region that is in contact with the third surface. The display device has a third surface and an area facing it, and the display device has first to third It has a display area, and the first display area has an area that overlaps with the first surface. The second display area has an area that overlaps with the second surface, and the third display area The area has a region that overlaps with the third surface, and in the first display area, The first image obtained by the image sensor is displayed, and in the second display area, the image sensor... This is a method for driving an electronic device, characterized by displaying a second image obtained by [the process].

[0015] Alternatively, one aspect of the present invention is a method for driving an electronic device having the above configuration, wherein the second surface is a side surface. This is a method for driving electronic equipment, characterized by the following:

[0016] In this specification, a connector, for example, FPC (F) is used for the display panel (display device). (lexible printed circuit) or TCP (Tape Car A module with a rier package attached, and a printed circuit board at the end of the TCP. A module equipped with COG (Chip On) or a substrate on which display elements are formed. Modules in which ICs (integrated circuits) are directly mounted using the glass method are included in the display device. It may occur. [Effects of the Invention]

[0017] According to one aspect of the present invention, a novel electronic device can be provided. Or, the present invention According to one embodiment, an electronic device capable of various displays can be provided. Or, the present invention According to one embodiment, an electronic device capable of various operations can be provided. According to one embodiment, a display device (display panel) applicable to such electronic devices is provided. It is possible to provide a novel display device, etc., according to one aspect of the present invention. can.

[0018] Alternatively, according to one aspect of the present invention, to provide an electronic device or the like that can capture an appropriate image. This is possible. Alternatively, according to one aspect of the present invention, an electronic device that can illuminate a subject can be provided. It can be provided. Or, according to one aspect of the present invention, an electronic device that allows for easy battery replacement. Equipment and the like can be provided. Alternatively, according to one aspect of the present invention, an easy-to-operate electronic device can be provided. Equipment and the like can be provided. Alternatively, according to one aspect of the present invention, the subject is photographed in a manner An electronic device that can check the situation can be provided. Or, according to one aspect of the present invention This allows for the provision of electronic devices that facilitate wireless communication. Alternatively, in one aspect of the present invention... Therefore, we can provide electronic devices that can produce good sound. Or, this According to one aspect of the invention, it is possible to provide electronic devices that can be bent or unbent. Cut.

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not necessarily have to possess all of these effects. Furthermore, other effects may be considered. This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings It is possible to extract effects other than those mentioned above from the descriptions in the surfaces, claims, etc. [Brief explanation of the drawing]

[0020] [Figure 1] An example of the configuration of an electronic device according to an embodiment. [Figure 2] An example of the configuration of an electronic device according to an embodiment. [Figure 3] An example of the configuration of an electronic device according to an embodiment. [Figure 4] An example of the configuration of an electronic device according to an embodiment. [Figure 5] An example of the configuration of an electronic device according to an embodiment. [Figure 6] An example of the configuration of an electronic device according to an embodiment. [Figure 7] An example of the configuration of an electronic device according to an embodiment. [Figure 8] An example of the configuration of an electronic device according to an embodiment. [Figure 9] An example of the configuration of an electronic device according to an embodiment. [Figure 10]An example of the configuration of an electronic device according to an embodiment. [Figure 11] An example of the configuration of an electronic device according to an embodiment. [Figure 12] An example of the configuration of an electronic device according to an embodiment. [Figure 13] An example of the configuration of an electronic device according to an embodiment. [Figure 14] An example of the configuration of an electronic device according to an embodiment. [Figure 15] An example of the configuration of an electronic device according to an embodiment. [Figure 16] An example of the configuration of an electronic device according to an embodiment. [Figure 17] An example of the configuration of an electronic device according to an embodiment. [Figure 18] An example of the configuration of an electronic device according to an embodiment. [Figure 19] An example of the configuration of an electronic device according to an embodiment. [Figure 20] An example of the configuration of an electronic device according to an embodiment. [Figure 21] An example of the configuration of an electronic device according to an embodiment. [Figure 22] An example of the configuration of an electronic device according to an embodiment. [Figure 23] An example of the configuration of an electronic device according to an embodiment. [Figure 24] An example of the configuration of an electronic device according to an embodiment. [Figure 25] An example of the configuration of an electronic device according to an embodiment. [Figure 26] An example of the configuration of an electronic device according to an embodiment. [Figure 27] An example of the configuration of an electronic device according to an embodiment. [Figure 28] An example of the configuration of a light-emitting panel according to an embodiment. [Figure 29] An example of the configuration of a light-emitting panel according to an embodiment. [Figure 30] An example of the configuration of a light-emitting panel according to an embodiment. [Figure 31] Cross-sectional TEM image and local Fourier transform image of an oxide semiconductor. [Figure 32]A diagram showing the nanobeam electron diffraction pattern of an oxide semiconductor film, and a diagram showing an example of a transmission electron diffraction measurement device. [Figure 33] A figure and a planar TEM image illustrating an example of structural analysis by transmission electron diffraction measurement. [Modes for carrying out the invention]

[0021] The embodiments will be described below with reference to the drawings. However, the embodiments may differ in many ways. It is possible to implement it in any manner, and without deviating from its purpose and scope, its form and Those skilled in the art will readily understand that the details can be modified in various ways. It should not be interpreted as being limited to the contents described herein. Furthermore, in the configuration described below, Symbols indicating similar parts or functions are shown using common symbols across different drawings. A detailed explanation of the part having this feature is omitted. Also, when referring to a similar function, the hatch pattern is used. The same character is used, and sometimes no special symbol is assigned to it.

[0022] Furthermore, the content described in one embodiment (even a part of it) may vary depending on the form of its implementation. Other content (even partial content) described in the tone, and / or one or more other implementations To apply, combine, or replace the content described in the form (even if only a part of it is acceptable), It is possible to do things like this.

[0023] Furthermore, the content described in each embodiment refers to the use of various figures in each embodiment. This refers to the content stated, or the content stated using the text described in the specification.

[0024] Furthermore, a diagram (even a partial one) described in one embodiment may refer to another part of that diagram. Further figures (even partial ones) described in that embodiment, and / or one or more figures. In another embodiment, the diagram (or even just a part of it) described above can be combined by This allows for the creation of even more diagrams.

[0025] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0026] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0027] (Embodiment 1) In this embodiment, an electronic device according to one aspect of the present invention and a display device applicable to said electronic device are provided. The display panel (sometimes called a display panel) will be explained with reference to the drawings.

[0028] [Electronic device toy] Figure 1(A1) is a schematic perspective view showing the front side of the electronic device exemplified below. A2) is a schematic perspective view showing the reverse side.

[0029] The electronic device shown in Figures 1(A1) and 1(A2) consists of a housing 101 and the surface of the housing 101 ( For example, a display panel that can be displayed on the front, back, side, etc. It is equipped with a 110. Furthermore, a cover is placed above the display panel 110 to protect it from scratches and damage. In some cases, materials such as resin may be provided.

[0030] The housing 101 has a front surface, a back surface, a first side surface, and a second surface having an area in contact with the first side surface. A side surface, a third side surface having a region facing the first side surface, and a region facing the second side surface. It has a surface shape having a fourth side surface. Alternatively, the housing 101 has a first side surface. The first side surface has an area in contact with the front surface and / or the back surface. Or, housing 1 01 has a second side surface. The second side surface is adjacent to the front surface and / or back surface. It has a region. Alternatively, the housing 101 has a third side surface. The third side surface is the front surface, and The back surface has an area in contact with it. Alternatively, the housing 101 has a fourth side surface. The fourth side has a region that is in contact with the front surface and / or the back surface.

[0031] Furthermore, the front surface has an area that faces the back surface.

[0032] In other words, the housing 101 has multiple surfaces. For example, the housing 101 has a front surface and a back surface. It has a face and at least four sides. Each face is smoothly curved. Because this can sometimes be the case, it can be difficult to define the boundaries of each surface. Also, the term "side" is sometimes used. As described, the side may include a portion of the front or back surface.

[0033] For example, the side is viewed from the side (for example, from a direction where the back or front is not visible). This refers to the area that can be checked. However, if the front, back, or sides have curved surfaces... In some cases, it can be difficult to define boundaries. For example, in such cases, a certain area may be the front side (back side). It can also be said that it is part of and also part of an aspect of ). Similarly, for example, In some cases, the area can be described as being part of one aspect and part of another. .

[0034] For example, the side surface has an area that is in contact with the front surface. Or, the side surface is in contact with the back surface. It has a region that is in contact with another side. For example, one side has a region that is in contact with another side.

[0035] Here, the front surface and / or the back surface have, for example, a flat area. Or, The front and / or back surfaces have, for example, curved areas. The sides have, for example, For example, it has a curved region. Or, the side has a flat region, for instance. Note that the front and back sides may be difficult to distinguish from each other. Therefore, the front side Sometimes the front side is called the back side, and sometimes the back side is called the front side. The back side may have a larger display area. For example, the sides may have a larger display area. The area is smaller than the front or back surface.

[0036] In addition to the above-mentioned surfaces, there may be other surfaces provided. That is, 6 It may have more faces than a single facet, or fewer faces than described above. In some cases, they only possess that.

[0037] The display panel 110 is provided so as to have an area that overlaps with the front surface of the housing 101. It has a display area 111. Alternatively, the display panel 110 overlaps with one of the sides of the housing 101. It has a display area 113 which is provided to have a region. Or, display panel 1 10 is a display that has an area that overlaps with a part of the back surface of the housing 101. It has a region 116. Note that the side on which the display region 113 is provided is just an example. In this case, the length of one side is shorter than the side on which the display area 113 is not provided. One example of a side on which area 113 is provided is one on which display area 113 is not provided. It has a smaller area than the side. In other words, the side on which the display area 113 is provided has a smaller area than the side. Examples include a plane parallel to the short axis and a plane perpendicular to the long axis.

[0038] Note that the boundaries of display area 111, display area 113, and display area 116 are one For example, in drawings, it may be shown with a dotted line. However, in some cases, or in some situations, Depending on the circumstances, the boundaries may differ from the dotted lines indicated on the drawing.

[0039] On all four sides of the housing 101, there is an area that overlaps with the display panel 110. The region preferably has a curved shape. For example, the front surface and the side surface, and the side surface and the back surface. It is preferable that there are no corners between the surfaces and that these surfaces are continuous. Also, the shape of the side surface. However, for example, a curved surface in which the tangent slope is continuous from the front surface to the back surface of the housing 101 It is preferable to have it. In particular, the shape of the side is obtained by deforming the plane without stretching or contracting it. It is preferable to have a developable surface. By having such a shape, the display panel 110 can be made to bend smoothly. In other words, the display panel 110 The radius of curvature when bent can be increased. Therefore, with respect to the display panel 110, This reduces the stress caused by bending, thereby extending the lifespan of the display panel 110. This is possible. Also, by adopting this shape, the display image on the display panel 110 is It appears to change smoothly. Therefore, it feels less jarring and is easier to view. However, the present invention is not limited to these embodiments.

[0040] Here, as an example, the area of ​​display area 111 is larger than the area of ​​display area 116. Alternatively, as an example, the length of one side of display area 111 is greater than the length of one side of display area 116. It is also long. Therefore, as shown in Figures 1(B1) and 1(B2), the back surface of the housing 101 is , area 201 can be secured. In other words, the back of the housing 101 has display area 116 and area 201 It has the following features. For example, area 201 does not have a display area 116. Therefore, various types of devices with different functions can be placed in area 201.

[0041] For example, the display area 116 has an area of ​​10% or more and 90% or less of the area of ​​the display area 111. It has. More preferably, the display area 116 is, for example, 30% of the area of ​​the display area 111. The above has an area of ​​70% or less.

[0042] For example, the display area 116 is between 10% and 90% of the length of one side of the display area 111. It has one side of length. More preferably, the display area 116 is, for example, one side of the display area 111. It has one side that is between 30% and 70% of the total length of the sides.

[0043] In addition to the display panel 110, the surface of the housing 101 (front, back, sides, etc.) also has Hardware buttons, external connection terminals, image sensors, infrared sensors, microphones, and speakers They must have a k

[0044] Note that in Figures 1(A1) and 1(A2), one side of the housing 101 is used as the display area. While the example shown illustrates this configuration, it is also possible to configure the display area to overlap with other sides.

[0045] As an example, Figures 2(A1) and 2(A2) show the case where the display area 115 is also included. An example configuration is shown. The display area 115 is the area that overlaps with the side facing the display area 113. It has. Here, Figure 2(A1) is a schematic perspective view showing the front side of the electronic device. Figure 2(A2) is a schematic perspective view showing the reverse side. An example with region 201 is also shown. This is shown in Figures 2(B1) and 2(B2).

[0046] Furthermore, as another example, Figures 3(A1) and 3(A2) show a display panel 110, An example configuration is shown where the system has area 111, display area 116, and display area 112. Here, the display area 112 is configured to have an area that overlaps with one of the sides of the housing 101. It is being removed. Furthermore, the side on which the display area 112 is provided is the display area 112 On sides where a display area 113 is not provided (for example, in Figure 1(A1) It has one side that is longer than the other side. The side on which the display area 112 is provided has one side that is longer than the other side. For example, it has a larger area than the side where the display area 112 is not provided. For example, the side on which the display area 112 is provided is a surface parallel to the long axis. This is a plane perpendicular to the short axis direction. Here, Figure 3(A1) shows the oblique angle of the front side of the electronic device. This is a schematic view, and Figure 3(A2) is a schematic perspective view showing the back side. It also has region 201. Examples of this case are shown in Figures 3(B1) and 3(B2).

[0047] Furthermore, as another example, Figures 4(A1) and 4(A2) show the side facing the display area 112. This shows an example configuration where there is also a display area 114 that has an area overlapping the surface. Figure 4(A1) is a schematic perspective view showing the front side of the electronic device, and Figure 4(A2) is the back side. This is a schematic perspective view showing the side surface. An example of the case with region 201 is shown in Figure 4(B1), This is shown in 4(B2).

[0048] Furthermore, as another example, Figures 5(A), 5(B), and 5(C) show the display panel 110 However, it has display area 111, display area 116, display area 112, and display area 113. This shows an example configuration for the case where the following occurs. Here, the display area 112 is one of the sides of the housing 101 and It is provided to have overlapping areas. The display area 113 is on another side of the housing 101. It is provided so as to have an overlapping area with one. Furthermore, a display area 112 is provided here. The side that is provided is, for example, longer in length than the side on which the display area 113 is provided. It has sides. The side on which the display area 112 is provided is, for example, the side on which the display area 113 is provided. It has a larger area than the side surface. Here, Figure 5(A) is the front surface of the electronic device. Figure 5(B) is an example of a schematic perspective view showing the side, and Figure 5(B) is an example of a schematic perspective view showing the back side. C) is an example of a case different from Figure 5(B). Also, an example of a case with region 201 is shown below. This is shown in Figures 6(A), 6(B), and 6(C).

[0049] This configuration allows for protection not only on the surface parallel to the front of the enclosure, but also on the sides of the enclosure. It also becomes possible to display on the back. In particular, the display area can be set along two or more sides of the enclosure. It is preferable to include this feature because it increases the diversity of the display.

[0050] A display area 111 is positioned along the front surface of the housing 101, and a display area is positioned along the back surface. Display area 116 and each display area arranged along the side are treated as independent display areas. You may use it to display different images, or you may use one across two or more display areas. Images, etc., may be displayed. For example, a display area arranged along the front surface of the housing 101. The image to be displayed on 111 is displayed in a display area 112 provided along the side of the housing 101, and the housing Display continuously so as to connect to the display area 116, etc., which is arranged along the back of 101. That's fine.

[0051] For example, the display area 111 provided along the front surface of the housing 101 contains text information and You may display multiple icons associated with an application, etc. For example, display Area 112 may display icons associated with applications, etc.

[0052] In addition, there are multiple display areas (for example, display area 113) provided along the side of the housing 101. To display text information and other data so that it flows (moves) across the display area 112. It is also possible to display text across the display area provided along the front, side, and back surfaces. Text information can also be displayed in a way that makes it appear to flow (move). In this way, on two sides of the enclosure... By displaying information across the top, the display can be used regardless of the orientation of the electronic device, for example, when an incoming call is received. This can prevent the user from missing information.

[0053] Furthermore, for example, when a phone call is received or an email is received, not only the display area 111 but also the display area Display areas along the sides of area 112, etc., and display area 116, etc., display information about the sender The configuration may also display (for example, the caller's name, phone number, email address, etc.). For example, when an email is received, the sender information is displayed in display area 112 and display area 113. It may be displayed there.

[0054] Furthermore, Figures 7(A) and 7(B) show examples of the usage status of electronic devices. In Figure 7(A), Multiple icons 121 are displayed in display area 111, and a slider bar 12 is displayed in display area 112. 5 is displayed. Touch the slider bar 125 with your finger 126, etc. and move the slider bar By moving it up and down, the icon 12 displayed in the display area 111 as shown in Figure 7(B) The content displayed for the first prize slides up and down accordingly. In Figures 7(A) and 7(B), the slide By sliding the side bar 125 downwards with finger 126, multiple icons 121 etc. can be accessed. This shows the image sliding upward from display area 111 to display area 113. Yes, they are.

[0055] Note that here we have shown the case where the image displayed in display area 111 is an icon, This is not limited to that; depending on the application being launched, various types of information such as documents, images, and videos may be generated. Information can be displayed by sliding. Also, the slide bar 125 is in the display area 1 Not only 12, but also display area 111, display area 113, display area 114, or display area It can also be placed in positions such as 116.

[0056] Furthermore, during standby time when electronic devices are not in use, the front surface of the housing 101 is provided Turn off the display in the display area 111 and / or the display area 116 provided along the back surface. (For example, display in black), and display information only in the display area 112 etc. provided along the side. You could create a situation like this and switch the display state. By not displaying in display area 111 or display area 116, the power consumption during standby is reduced. It can be reduced. Alternatively, conversely, it can be displayed only in display area 111, and display area 1 In at least one area, such as the 16 or the side display area, display should not be shown. It can also reduce power consumption during use.

[0057] Alternatively, a display area 111 is provided along the front surface of the housing 101, and a display area is provided along the back surface. In the display area 116, the display area 112 provided along the side, etc., one of them It is also possible to display information only in the section. For example, display area 111 and display area 1 Display is performed only at 16, and the display is turned off in the display area 112 etc. provided along the side. You can switch to a setting where it is not displayed.

[0058] Furthermore, in the areas that overlap with the display panel 110, specifically the areas that overlap with each display area, there are touches. It is preferable to have an input device such as a touch sensor. Examples of touch sensors include For example, a configuration in which a sheet-shaped capacitive touch sensor is mounted on top of the display panel 110. Alternatively, the display panel 110 itself could be equipped with a touch sensor function, which is a so-called i A touch sensor of the condenser type may also be used. In this case, the display panel 110 will display It can be said that it not only has functionality but also functions as a touch sensor. In-cell type touch As the panel, a capacitive touch sensor may be used, or a photoelectric conversion element may be used. An optical touch sensor may be applied. Alternatively, the opposing substrate of the display panel 110 (tra I want to add touch sensor functionality to a circuit board that does not have a built-in sensor, etc. An on-cell type touch sensor may also be applied. In this case as well, the display panel 110 is a display It can be said that it not only has the function of displaying information, but also the function of a touch sensor. Or, the casing The touch sensor is located on the outermost surface of the 101, protecting it from scratches and other damage through its cover and cover glass. A so-called cover-integrated touch panel with the added functionality may be applied. Alternatively, The optical film of the display panel 110 has a touch sensor function. A sensor may be applied.

[0059] Furthermore, input devices such as touch sensors are used, for example, by displaying information on the display panel 110. It is desirable that it be provided in the entire area where it can be done. However, in one aspect of the present invention, this Not limited to, for example, display area 111, display area 112, display area 113, display area In display area 114, display area 115, and display area 116, a part of each area, or Even if the entire structure has areas where no input devices such as touch sensors are provided. For example, in all or part of the display area 116, touch sensors, etc. It may have an area where no input device is provided. Or, the entirety of the display area 112, Alternatively, touch in a part of the area and all or part of the display area 114. It may have areas where input devices such as sensors are not provided. By having areas where sensors are not installed, malfunctions can be prevented. This makes it easier to hold the dish.

[0060] For example, display area 111, display area 112, display area 113, display area 114, display area A combination of touch operations for area 115 or display area 116, and the app It is preferable to associate it with the operation of the application.

[0061] As an example, touch operations on display area 112, display area 113, and display area 115 This shows an example of the association between combinations and application behavior. For example, all three display areas When a touch operation is performed on the display area 11, the power is turned ON or OFF. If you touch both 2 and display area 114 simultaneously, the application related to email will be displayed. The email content is displayed as soon as the application starts. Also, display area 112 and display area If you simultaneously touch 113, an application for making a phone call will be activated. It starts up. Also, when you touch display area 113 and display area 114 at the same time In that case, launch your browser.

[0062] Note that the above-mentioned association between touch operations and applications is just one example, and the operation Developers of shaping systems and application software, as well as users, prefer that settings be configurable as needed. It's nice.

[0063] Alternatively, while touching display area 111, touch one or more of the other display areas. By making each application perform actions through touch operation, the intended result is... This can prevent actions that are not intended to be performed from being executed.

[0064] In this way, the combination of touch operations in multiple areas is related to the operation of the application. By attaching it, intuitive operation is possible, resulting in a user-friendly human interface. It can achieve a face.

[0065] An electronic device according to one aspect of the present invention displays not only on the front surface of the housing, but also along one or more sides. This makes it possible to do so, and it is also possible to display information on the back of the enclosure. Therefore, it is possible to display a wider variety of information compared to conventional electronic devices. Also, each display area By incorporating a touch sensor, it becomes possible to perform a wider variety of operations compared to conventional electronic devices. This makes it possible to create electronic devices that can be operated more intuitively.

[0066] Here, we have shown examples of how to display various information using the display panel 110. The present invention is not limited to this aspect. For example, depending on the circumstances, In one aspect of the present invention, information may not be displayed. For example, the present invention In one embodiment, the display panel 110 may be used as a lighting device instead. Therefore, by applying it to lighting fixtures, it can be used as an interior design element with superior aesthetics. It is possible. Alternatively, in one aspect of the present invention, as a light source that can illuminate in various directions. It can be utilized. Alternatively, in one aspect of the present invention, instead of the display panel 110, It may be used as a light source such as a headlight or front light. In other words, one aspect of the present invention is It can be used as part of a display panel, or as a lighting device for the display panel.

[0067] In this case, one or two sides of the enclosure 101 are used as the display area. Although examples have been shown, the present invention is not limited thereto. For example, Figure 8(A1), Figure 8(A2) shows an example. Here, Figure 8(A1) shows the oblique view of the front side of the electronic device. This is a schematic view, and Figure 8(A2) is an example of a schematic perspective view showing the back side. Similarly, Figure 8( Figures B1) and 8(B2) show an example of a schematic perspective view illustrating the front and back sides of an electronic device. Alternatively, Figures 9(A1) and 9(A2) show perspective views of the front and back sides of the electronic device. An example of a schematic diagram is shown. Alternatively, Figures 9(B1) and 9(B2) show the front and back sides of the electronic device. An example of a schematic perspective view showing the side surface is shown.

[0068] In addition, in these cases as well, region 201 may also be provided. An example of such a case is as follows: Figures 10(A1) and 10(A2) show schematic perspective views of the front and back sides of the electronic device. An example of the diagram is shown. Alternatively, Figure 10(B1) and Figure 10(B2) show the front side of the electronic device and An example of a schematic perspective view showing the reverse side is shown. Alternatively, Figures 11(A1) and 11(A2) show the electrical components. An example of a schematic perspective view showing the front and back sides of the sub-device is shown. Alternatively, see Figure 11(B1). Figure 11(B2) shows an example of a schematic perspective view illustrating the front and back sides of an electronic device.

[0069] In this embodiment, an example is given where one display panel 110 has multiple display areas. Although this has been shown, one aspect of the present invention is not limited thereto. Each display area is a plurality of tables It may be configured using a display panel. For example, display area 111 and display area 116 These may each be configured using different display panels. An example of this is shown in Figure This is shown in Figure 12(A1) and Figure 12(A2). Here, Figure 12(A1) is the front surface of the electronic device. Figure 12(A2) is a schematic perspective view showing the side, while Figure 12(A2) is a schematic perspective view showing the back side.

[0070] This embodiment describes an example of the basic principle. Therefore, this embodiment You may freely combine some or all of this with some or all of other embodiments. It can be applied or replaced and implemented.

[0071] (Embodiment 2) In this embodiment, an example is shown in which an image sensor is placed in region 201. In this case, in Figures 1(B1) and 1(B2), the image sensor is located in region 201. An example of such a case is shown. However, the present invention is not limited to this. Various In other drawings, such as Figure 2(B1) and Figure 2(B2), similarly, in region 201 Various elements can be arranged.

[0072] First, Figure 13(A1) is a schematic perspective view showing the front side of the electronic device, and Figure 13(A2 ) is a schematic perspective view showing the back side. The image sensor 202 is provided in region 201. Furthermore, the image sensor 202 has the function of capturing images. The image sensor 202 has the function of a camera. Therefore, the image sensor 202 is a lens They may also have various optical components such as scallops.

[0073] As shown in Figure 13(B), by orienting the image sensor 202 toward the subject 205, Then, still images and videos can be captured. At this time, the display area 111 will show, for example, Image 206, which is a photograph of subject 205, is displayed. Display area 111 shows real time Immediately, the situation of subject 205 can be displayed. Then, while checking image 206... Then, still images and videos of subject 205 are taken. At this time, the display area 116 shows subject 2 If the illuminance of 05 is low, for example, illumination image 204 is displayed. Light is shone from the area where image 204 is displayed toward the subject 205. As a result, the subject The illumination can be increased to 205. Therefore, it is possible to take appropriate and beautiful images. ru.

[0074] Furthermore, the illumination image 204 is preferably a white image, for example. However, One aspect of the present invention is not limited thereto. The illumination image 204 may be changed to change the display color. This allows us to change the color of the light shining on subject 205. As a result, various It is possible to photograph the subject 205 in such a state. For example, if the surrounding ambient light is reddish In addition, in cases where the image is bluish, greenish, etc., the images of the illumination image 204 are used accordingly. By adjusting the colors to the appropriate level, it becomes possible to capture a suitable image.

[0075] Alternatively, the display color of the illumination image 204 may be changed, and the subject 205 may be photographed multiple times. Example For example, the display of the lighting image 204 is different depending on whether it is white, incandescent, or cool white. Shadows are removed. And by processing those images, it is possible to obtain appropriate captured images. Yes, it's possible.

[0076] Furthermore, one example of an illumination image 204 is one that has the same color and gradation across the entire surface. This is desirable. However, one aspect of the present invention is not limited thereto. It has multiple regions, In each of these areas, images of different colors may be applied.

[0077] Next, as another example, consider the case where the image sensor 202 and illumination element 203 are placed in region 201. Examples are shown in Figures 14(A1) and 14(A2).

[0078] Here, Figure 14(A1) is a schematic perspective view showing the front side of the electronic device, and Figure 14(A 2) is a schematic perspective view showing the back side. As shown in Figure 14(B), the image sensor 202 and the illumination By pointing the light-emitting element 203 towards the subject 205, it is possible to take still images or videos. At this time, the display area 111 will show, for example, an image 206 of the subject 205. It is shown that the status of the subject 205 is displayed in real time in the display area 111. This can be done. Then, while checking image 206, still images and videos of subject 205 can be taken. At this time, the display area 116 also displays, for example, an image 207 of the subject 205. It is displayed. As a result, subject 205, while looking at image 207, is able to see how You can check if you are being photographed. Therefore, take the image at the appropriate angle. It is possible.

[0079] Note that images 206 and 207 are displayed in different display areas. Therefore, the size, resolution, etc. of the displayed image may differ. It can also be said that image 206 and image 207 are different images. However, image 2 Image 06 and image 207 may be made to be exactly the same size and resolution.

[0080] Furthermore, if the illuminance of subject 205 is low, light will be directed from the illuminating element 203 toward subject 205. It is irradiated. As a result, the illuminance of subject 205 can be increased. Therefore, it is appropriate. It can take beautiful pictures.

[0081] Furthermore, it is desirable that the illumination element 203 emits white light, for example. However, this generation One aspect of illumination is not limited to this. By changing the color of the emitted light as the illumination element 203... This allows you to change the color of the light shining on subject 205. As a result, various conditions It is possible to photograph subject 205. For example, if the ambient light is reddish, blue In cases where the light is sensual, greenish, etc., the light emitted by the illuminating element 203 is appropriately set. By adjusting the color, it becomes possible to capture appropriate images.

[0082] Alternatively, the subject 205 may be photographed multiple times by changing the emission color of the illumination element 203. For example, when the light emitted from the lighting element 203 is white, when it is incandescent, and when it is cool white, the image is taken. This process is performed, and by processing these images, it is possible to obtain appropriate captured images. come.

[0083] Furthermore, as an example, it is desirable that the lighting element 203 has a single color or gradation. i. However, the present invention is not limited to this. A plurality of lighting elements 203 are provided, Each of them may emit light in a different color.

[0084] Note that in Figure 14(A2), image 207 was displayed, but as shown in Figure 15(A) The illumination image 204 may also be displayed, and depending on the situation, as shown in Figure 15(B) In addition, it is acceptable if image 207 is not displayed and illumination image 204 is displayed. By using the light from image 204 and the light from illumination element 203, the brightness can be increased, or illumination light The color can be changed. In other words, it can be used as multiple lighting elements. .

[0085] Note that here we have shown an example of using display area 111 and display area 116, but The invention is not limited to this embodiment. It is also possible to utilize other display areas.

[0086] For example, icon 208 may be displayed in display area 113. An example of this is shown below. This is shown in Figures 16(A1) and 16(A2). Here, Figure 16(A1) shows the main components of electronic equipment. Figure 16(A2) is a schematic perspective view showing the front side, and Figure 16(A2) is a schematic perspective view showing the back side. Examples are shown in Figures 16(B1) and 16(B2). Here, Figure 16(B1) shows an electronic device. Figure 16(B2) is a schematic perspective view showing the front side, and Figure 16(B2) is a schematic perspective view showing the back side. .

[0087] In this case, icon 208 has the function of a shutter button, for example. Therefore, when taking a picture, you can perform the task by touching icon 208. You can do this. Or, when focusing, touch icon 208. This allows the work to be performed.

[0088] Note that here, icon 208 is used to implement the function of a shutter button. However, one aspect of the present invention is not limited thereto. Dedicated hardware, for example, shutter A shutter function may be implemented by adding a button or similar mechanism.

[0089] As another example, icon 209 may be displayed in display area 112. Examples are shown in Figures 17(A1) and 17(A2). Here, Figure 17(A1) shows an electronic device. Figure 17(A2) is a schematic perspective view showing the front side, and Figure 17(A2) is a schematic perspective view showing the back side. .

[0090] Here, icon 209, for example, functions as a slider. By moving the slider bar, you can enlarge or reduce the image when taking a picture. This is possible. In other words, the zoom function can be controlled. At this time, the image sensor 202 You can control the lens you have to optically control the magnification and reduction, or you can use software to manipulate the digital image. You can control and scale the image using the wearer. Therefore, before taking a picture, By moving the bar on the 209, you can control the magnification at which you take the picture. come.

[0091] In this case, the zoom function was implemented using icon 209, but one of the present inventions The configuration is not limited to this. Dedicated hardware, such as operation buttons, may be provided. The zoom function may be implemented in this way.

[0092] Note that icons 208 and 209 are in the same display area (for example, display area 112). They may be displayed. In addition, each display area may contain various icons and text. It is also possible to display text, images, and other elements.

[0093] Thus, when region 201 is provided, the image sensor 202 and illumination are placed over that wide area. A bright element 203 can be placed. For example, the image sensor 202 can have a large Lenses and other components can be placed on them. Alternatively, the image sensor 202 can be a larger image sensor 202. It is possible to position it. Therefore, it is possible to take beautiful, high-resolution images. .

[0094] Note that in this case, the image sensor 202 and illumination element 203 are located in region 201. While an example has been shown, one aspect of the present invention is not limited thereto. For example, in areas other than region 201 An image sensor 202 and an illumination element 203 may be provided in that location. An example of this is shown in Figure 1. This is shown in 8(A1) and Figure 18(A2). Here, Figure 18(A1) shows the front side of the electronic device. Figure 18(A2) is a schematic perspective view showing the reverse side. Similarly, Examples are shown in Figures 18(B1) and 18(B2). Here, Figure 18(B1) shows an electronic device. Figure 18(B2) is a schematic perspective view showing the front side, and Figure 18(B2) is a schematic perspective view showing the back side. .

[0095] Note that multiple image sensors 202 may be arranged. At least one image sensor 20 2 may be located in region 201. Or, all image sensors 202 may be located in region 2 It may be placed in a location other than 01.

[0096] Although an example has been shown where region 201 is provided, one aspect of the present invention is not limited thereto. It will not be done. In some cases, or depending on the circumstances, even if area 201 is not provided. Good. In that case, display area 111 and display area 116 are, for example, roughly equal. This will result in a certain area. Examples of this case are shown in Figures 19(A1) and 19(A2). Here, Figure 19(A1) is a schematic perspective view showing the front side of the electronic device, and Figure 19(A 2) is a schematic perspective view showing the reverse side. Similarly, another example is shown in Figure 19(B1), Figure 19(B As shown in 2). Here, Figure 19(B1) is a schematic perspective view showing the front side of the electronic device. Figure 19(B2) is a schematic perspective view showing the reverse side.

[0097] Note that this type of shooting process involves running software that enables the camera's functionality. It can be done while doing that, or in software that implements a different function, It may be implemented as part of the system. For example, a system that implements the functionality of a video phone. You can do this while the software is running.

[0098] Furthermore, these functions can be implemented through software or hardware. Yes, it's possible. In the case of software, you can install it from a computer onto an electronic device. It may be installed on electronic devices via wired or wireless telecommunications lines. The software may be stored in the storage device of the electronic device from the outset.

[0099] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0100] (Embodiment 3) This embodiment shows an example of how various objects can be placed in region 201. Now, in Figure 1(B1) and Figure 1(B2), if various objects are placed in region 201... An example is shown, but one aspect of the present invention is not limited thereto. Various other drawings, for example, Figure 2 Similarly, in Figures (B1) and 2(B2), various elements are arranged in region 201. It is possible to do so. Also, the things described in Embodiment 2 can be placed in region 201, etc. It's fine if you do that.

[0101] First, as an example, Figure 20 shows an example where a battery 401 is located in region 201. As shown below. Here, Figure 20 is a schematic perspective view showing the back side of the electronic device. In Figure 20, the casing The image shows the battery 401 removed from body 101 with the cover removed. When the battery 401 is placed inside the casing 101, the cover is placed over the battery 401. This prevents the battery 401 from falling. Thus, by providing area 201 By placing the battery 401 there, the battery 401 can be easily replaced. It is possible.

[0102] Note that in Figure 20, the battery 401 was removable, but in one embodiment of the present invention This is not limited to this. Depending on the circumstances, a lid may be provided. Alternatively, the battery 401 may be designed to be inaccessible. In that case, area 201 Although a battery 401 is provided, there is no display area, so the battery 401 is made thicker. This allows for an increase in the capacity of the battery 401.

[0103] Next, as another example, Figure 2 shows an example where a receiving means 402 is provided in region 201. As shown in 1. Receiving means 402 include antennas, coils, electrodes, etc. Here Figure 21 is a schematic perspective view showing the back side of the electronic device. In Figure 21, the inside of the housing 101 A receiving means 402 is provided, and it communicates wirelessly with the communication device 403. This indicates that, for example, the receiving means 402 is NFC (Near Field Communication). It can be used as an antenna for electronic money and credit cards. Functions such as gitcard can be implemented. In this case, area 201 is display area 1 It is positioned so as not to overlap with 16. Therefore, for example, the touch sensor is also in area 20. It is not provided in 1. Therefore, radio waves are transmitted via touch sensors, display panels, etc. The receiving means 402 can be efficiently utilized without being disturbed by magnetism, electromagnetic waves, etc. This can be achieved.

[0104] Note that the receiving means 402 may have a transmitting function instead of a receiving function. Or, it may have both a receiving function and a transmitting function. For example, the receiving means 402 only needs to be able to exchange some kind of information, energy, etc. This can be achieved. This can be achieved.

[0105] Note that the receiving means 402 can be used not only for NFC but also for various applications such as TV, telephone, Bluetooth, short-range communication, etc. Also, it can be used as a means for charging an electronic device. For example, by using a coil, an antenna, etc., the electronic device can be charged wirelessly. This can be achieved. This can be achieved. This can be achieved.

[0106] Next, as another example, an example in the case where a speaker 404 and a speaker 405 are provided in the area 201 is shown in FIG. 22. Here, FIG. 22 is a perspective schematic view showing the back side of the electronic device. In FIG. 22, it shows a state where the speaker 404 and the speaker 405 are provided on the housing 101. As an example, the speaker 404 can play a sound source for the left ear, and the speaker 405 can play a sound source for the right ear. Thus, since the area 201 is provided, the speaker 404 and the speaker 405 can be arranged separately. Therefore, a sound with a sense of stereoscopy can be played. This can be achieved. This can be achieved. This can be achieved. This can be achieved. This can be achieved. This can be achieved.

[0107] This embodiment corresponds to a modification, addition, correction, deletion, application, generalization, or specialization of a part or all of other embodiments. Therefore, This embodiment For some or all of them, they can be freely combined with, applied to, or replaced by some or all of other embodiments and implemented. It can be applied, replaced, and implemented.

[0108] (Embodiment 4) In this embodiment, an example will be described in which a display panel (display device) or an electronic device can be bent, folded, and deformed in various ways for use. First, it will be described using FIGS. 23(A), FIGS. 23(B), and FIGS. 23(C). FIG. 23(A) shows an electronic device 150 in a form (first form) in which the display panel 110 is unfolded. FIG. 23(C) shows an electronic device 1

[0109] 50 in a form (second form) in which the display panel 110 is folded. FIG. 23(B) shows the electronic device 150 in a bent state. That is, FIGS. 23(B) shows the electronic device 150 in a form that changes from one of the form (first form) in which the display panel 110 is unfolded or the form (second form) in which the display panel 110 is folded to the other. Note that in FIGS. 23(B) and FIGS. 23(C), the display panel 110 is shown in a form that is bent so as to be visible from the outside. However, one aspect of the present invention is not limited to this . The display panel 110 may be bent in a form that is hidden inside. The electronic devices 150 shown in FIGS. 23(A), FIGS. 23(B), and FIGS. 23(C) have a flexible display panel 110. The electronic device 150 further has a plurality of support panels 153a, a plurality of support panels 155a, and a plurality of support panels 155b. As the support panel 153a, for example, a material with lower flexibility than the display panel 110 (

[0110] The electronic devices 150 shown in FIGS. 23(A), FIGS. 23(B), and FIGS. 23(C) have a flexible display panel 110. The electronic device 150 further has a plurality of support panels 153a, a plurality of support panels 155a, and a plurality of support panels 155b.

[0111] As the support panel 153a, for example, a material with lower flexibility than the display panel 110 ( In other words, it is formed from a material that is difficult to bend. Also, support panel 155a, support panel 155 For example, b is a material that is less flexible than the support panel 153a (i.e., less flexible). Formed from (material). As shown in Figures 23(A), 23(B), and 23(C), the display part The outer circumference of the panel 110 and the surface of the display panel 110 facing the display section are provided with support panels. This increases the mechanical strength of the display panel 110, resulting in a structure that is less prone to damage, which is preferable.

[0112] Furthermore, support panels 153a, 155a, and 155b have light-shielding properties. When formed from such a material, the drive circuit portion of the display panel 110 is exposed to ambient light. This can be suppressed. This allows for the suppression of photodegradation of transistors and other components used in the drive circuit. It is suitable.

[0113] Furthermore, although not shown in Figures 23(A), 23(B), and 23(C), electronic device 1 The calculation unit, storage unit, detection unit, etc. of 50 are located between the display panel 110 and the support panel 155b. It can be placed in between.

[0114] Support panels 153a, 155a, and 155b can be used Materials such as plastic, metal, alloy, and rubber can be used to form them. Using rubber or similar materials is preferable because it allows for the creation of lightweight and damage-resistant support panels. For example, support panel 153a, support panel 155a, support panel 155b, silicone Rubber, stainless steel, or aluminum can be used.

[0115] Furthermore, in the electronic device 150, the display panel 110, which includes a flexible display unit, is internal It can be folded either by bending or outward bending. When the electronic device 150 is not in use, bending it so that the display panel 110 faces inward can prevent the display panel 110 from being scratched or soiled. As an example, as shown in FIG. 23(A), an area 201 is provided near the display panel 110. Therefore, as an example, similar to other embodiments, the display area 111 has a larger area than the display area 116. Various things can be arranged in the area 201, similar to other embodiments.

[0116] Here, as an example, as shown in FIG. 23(A), an area 201 is provided near the display panel 110. Therefore, as an example, similar to other embodiments, the display area 111 has a larger area than the display area 116. Various things can be arranged in the area 201, similar to other embodiments. Here, as an example, as shown in FIG. 23(A), an area 201 is provided near the display panel 110. Therefore, as an example, similar to other embodiments, the display area 111 has a larger area than the display area 116. Various things can be arranged in the area 201, similar to other embodiments.

[0117] Here, the folded state as shown in FIG. 23(C) is shown in FIGS. 24(A) and 24(B). FIG. 24(A) shows an example of the front side, and FIG. 24(B) shows an example of the back side. In the area 201, for example, an imaging element 202 and a lighting element 203 are arranged. And in the display area 111, for example, an image 206 is displayed. In the display area 116, for example, an image 207 is displayed. FIG. 24(C) shows a case where, for example, icons 208 and 209 are displayed in the display area 112. As shown in FIGS. 24(C), 24(D), and 24(E), by moving the slider bar, zoom functions such as zooming in and out can be controlled. Here, the folded state as shown in FIG. 23(C) is shown in FIGS. 24(A) and 24(B). FIG. 24(A) shows an example of the front side, and FIG. 24(B) shows an example of the back side. In the area 201, for example, an imaging element 202 and a lighting element 203 are arranged. And in the display area 111, for example, an image 206 is displayed. In the display area 116, for example, an image 207 is displayed. FIG. 24(C) shows a case where, for example, icons 208 and 209 are displayed in the display area 112. As shown in FIGS. 24(C), 24(D), and 24(E), by moving the slider bar, zoom functions such as zooming in and out can be controlled. Here, the folded state as shown in FIG. 23(C) is shown in FIGS. 24(A) and 24(B). FIG. 24(A) shows an example of the front side, and FIG. 24(B) shows an example of the back side. In the area 201, for example, an imaging element 202 and a lighting element 203 are arranged. And in the display area 111, for example, an image 206 is displayed. In the display area 116, for example, an image 207 is displayed. FIG. 24(C) shows a case where, for example, icons 208 and 209 are displayed in the display area 112. As shown in FIGS. 24(C), 24(D), and 24(E), by moving the slider bar, zoom functions such as zooming in and out can be controlled. Here, the folded state as shown in FIG. 23(C) is shown in FIGS. 24(A) and 24(B). FIG. 24(A) shows an example of the front side, and FIG. 24(B) shows an example of the back side. In the area 201, for example, an imaging element 202 and a lighting element 203 are arranged. And in the display area 111, for example, an image 206 is displayed. In the display area 116, for example, an image 207 is displayed. FIG. 24(C) shows a case where, for example, icons 208 and 209 are displayed in the display area 112. As shown in FIGS. 24(C), 24(D), and 24(E), by moving the slider bar, zoom functions such as zooming in and out can be controlled.

[0118] In FIGS. 23(A), 23(B), and 23(C), examples where the area 201 is provided are shown, but one aspect of the present invention is not limited to this. For example, examples where the area 201 is not provided are shown in FIGS. 25(A), 25(B), and 25(C). Similarly, the folded state is shown in FIGS. 26(A) and 26(B). Regarding FIG. 26(B), In FIGS. 23(A), 23(B), and 23(C), examples where the area 201 is provided are shown, but one aspect of the present invention is not limited to this. For example, examples where the area 201 is not provided are shown in FIGS. 25(A), 25(B), and 25(C). Similarly, the folded state is shown in FIGS. 26(A) and 26(B). Regarding FIG. 26(B), ​ It may also be as shown in Figure 26(C) or Figure 26(D).

[0119] Note that in Figures 23(A), 23(B), and 23(C), when there is one fold... As shown above, the present invention is not limited to these aspects. Good. For example, Figure 27(A) shows an example where there are three folds. Also, for example... Figure 27(B) shows an example where there are four folds. Note that even in these cases, the same As shown, region 201 does not necessarily have to be provided. An example of this case is shown in Figure 27(C).

[0120] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0121] (Embodiment 5) In this embodiment, a foldable electronic device that can be applied to an electronic device according to one aspect of the present invention. The configuration of the touch panel will be explained with reference to Figure 28.

[0122] Figure 28(A) illustrates the structure of a touch panel applicable to an electronic device according to one embodiment of the present invention. This is a front view.

[0123] Figure 28(B) is a cross-sectional view along cutting lines AB and CD in Figure 28(A). .

[0124] Figure 28(C) is a cross-sectional view of Figure 28(A) at the cutting line EF.

[0125] <Explanation of the front view> The touch panel 300 illustrated in this embodiment has a display unit 301 (see Figure 28(A)). (see).

[0126] The display unit 301 includes multiple pixels 302 and multiple imaging pixels 308. This allows for the detection of fingers or other objects touching the display unit 301. This enables the use of the imaging pixels 308. This allows you to configure a touch sensor.

[0127] Pixel 302 comprises multiple sub-pixels (e.g., sub-pixel 302R), and the sub-pixels are light-emitting elements. It is equipped with a pixel circuit that can supply power to drive the light-emitting elements.

[0128] The pixel circuit can supply selection signals and image signals. The wiring is connected electrically.

[0129] Furthermore, the touch panel 300 is a scan line drive that can supply selection signals to the pixels 302. Circuit 303g(1) and an image signal line drive circuit that can supply an image signal to the pixel 302. It is equipped with road 303s(1).

[0130] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element. .

[0131] The imaging pixel circuit has wiring and power supply potential that can supply control signals. It is electrically connected to the wiring that allows it to function.

[0132] One example of a control signal is selecting the imaging pixel circuit that reads out the recorded imaging signal. A signal that can be generated, a signal that can initialize the imaging pixel circuit, and a signal that the imaging pixel circuit can emit light Examples include signals that allow for the determination of the detection time.

[0133] The touch panel 300 can supply control signals to the image pixel 308 as an image pixel drive. It comprises circuit 303g(2) and imaging signal line driving circuit 303s(2) for reading out the imaging signal. .

[0134] <Explanation of the cross-section> The touch panel 300 has a substrate 310 and a counter substrate 370 facing the substrate 310. (See Figure 28(B)).

[0135] The substrate 310 is a flexible substrate 310b, preventing the unintended diffusion of impurities to the light-emitting element. A protective barrier film 310a and an adhesive layer 31 for bonding the substrate 310b to the barrier film 310a. It is a laminate made up of layers of 0c.

[0136] The opposing substrate 370 is a flexible substrate 370b, which prevents unintended impurities from spreading to the light-emitting element. A barrier film 370a to prevent scattering and an adhesive layer to bond the substrate 370b and the barrier film 370a. It is a laminate of 370c (see Figure 28(B)).

[0137] The sealing material 360 bonds the opposing substrate 370 and the substrate 310 together. It has a refractive index higher than air and also serves as an optical junction layer. Pixel circuits and light-emitting elements (for example) The light-emitting element (luminescent element 350R) is located between the substrate 310 and the opposing substrate 370.

[0138] Pixel composition Pixel 302 has sub-pixels 302R, 302G, and 302B (Figure 2) See 8(C). In addition, sub-pixel 302R is equipped with light-emitting module 380R, sub-pixel 302 Pixel G is equipped with light-emitting module 380G, and sub-pixel 302B is equipped with light-emitting module 380B. .

[0139] For example, sub-pixel 302R supplies power to light-emitting element 350R and light-emitting element 350R. It also includes a pixel circuit containing transistor 302t which can perform (see Figure 28(B)). The light-emitting module 380R consists of a light-emitting element 350R and an optical element (e.g., a colored layer 367R). It is equipped with.

[0140] The light-emitting element 350R consists of a lower electrode 351R, an upper electrode 352, and the lower electrode 351R and the upper electrode The poles 352 have a layer 353 containing a luminescent organic compound (see Figure 28(C)).

[0141] The layer 353 containing a luminescent organic compound includes luminescent unit 353a and luminescent unit 353b. The system also includes an intermediate layer 354 between the light-emitting unit 353a and the light-emitting unit 353b.

[0142] The light-emitting module 380R has a colored layer 367R on the opposing substrate 370. The colored layer is specific Any material that transmits light having a certain wavelength is acceptable, for example, one that exhibits red, green, or blue light. A material that selectively transmits light can be used. Alternatively, the light emitted by the light-emitting element can be left as is. A transparent area may also be provided.

[0143] For example, the light-emitting module 380R is in contact with the light-emitting element 350R and the colored layer 367R. It has a material of 360.

[0144] The colored layer 367R is located in a position that overlaps with the light-emitting element 350R. As a result, the light-emitting element 350 A portion of the light emitted by R passes through the sealing material 360 and the colored layer 367R, which also serve as the optical bonding layer. Then, as shown by the arrow in the diagram, it is emitted to the outside of the light-emitting module 380R.

[0145] Although an example using a light-emitting element as the display element is shown here, the present invention is also described in detail below. The embodiments are not limited to these.

[0146] For example, in this specification, etc., display element, display device having a display element, light emission Light-emitting devices, which are devices having elements and light-emitting elements, can take various forms or various shapes. It can have such elements. Examples of display elements, display devices, light-emitting elements, or light-emitting devices include EL (electroluminescent) elements (EL elements including organic and inorganic materials, organic E L elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) (,), transistor (a transistor that emits light in response to current), electron emission element, liquid crystal element, Electronic ink, electrophoretic elements, grating light bulbs (GLV), plasma displays Tables using PDP (Photographic Display Panel) and MEMS (Micro-Electro-Mechanical Systems) Display element, digital micromirror device (DMD), DMS (Digital Micromirror Device) (Shutter), MIRASOL (registered trademark), IMOD (Interference Modulation) (Distribution) element, shutter-type MEMS display element, optical interference type MEMS display element, Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, Displays where contrast, brightness, reflectance, transmittance, etc., change due to electromagnetic effects. Some have a medium. An example of a display device using an EL element is an EL display. Examples include field emission devices. A flat-panel display (FED) or SED (Surface-C) display (SED: Surface-C Examples include (onduction electron-emitter display). An example of a display device using liquid crystal elements is a liquid crystal display (transmissive liquid crystal display). I. Semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection Examples include (ejection-type liquid crystal displays). One type of display device that uses electronic ink or electrophoretic elements. Examples include electronic paper. Furthermore, semi-transmissive liquid crystal displays and reflective liquid crystal displays... When implementing a display, some or all of the pixel electrodes are used as reflective electrodes. The goal is to make it capable of doing so. For example, some or all of the pixel electrodes are made of aluminum. It would be good to have silver, etc. Furthermore, in that case, below the reflective electrode, SRAM Any memory circuit can be installed. This further reduces power consumption. It is possible.

[0147] 《Touch Panel Configuration》 The touch panel 300 has a light-shielding layer 367BM on the opposing substrate 370. M is provided so as to surround the colored layer (for example, colored layer 367R).

[0148] The touch panel 300 is equipped with an anti-reflective layer 367p in a position that overlaps the display unit 301. For example, a circular polarizing plate can be used as the anti-radiation layer 367p.

[0149] The touch panel 300 includes an insulating film 321. The insulating film 321 is connected to a transistor 302t It covers the pixel circuit. The insulating film 321 is a layer for flattening the irregularities caused by the pixel circuit. It can be used in this way. In addition, it suppresses the diffusion of impurities into transistors such as transistor 302t. An insulating film having layers that can produce this can be applied to the insulating film 321.

[0150] The touch panel 300 has light-emitting elements (e.g., light-emitting elements 350R) on an insulating film 321. ru.

[0151] The touch panel 300 has a partition wall 328 that overlaps the end of the lower electrode 351R on the insulating film 321. It has (see Figure 28(C)). In addition, the spacing between substrate 310 and opposing substrate 370 is controlled by The peser 329 is located on the bulkhead 328.

[0152] 《Configuration of the image signal line driving circuit》 The image signal line driving circuit 303s(1) includes a transistor 303t and a capacitor 303c. The drive circuit can be formed on the same substrate using the same process as the pixel circuit. Figure 2 As shown in 8(B), transistor 303t has a second gate on insulating film 321. It is also acceptable for the second gate to be electrically connected to the gate of transistor 303t. Furthermore, different potentials may be applied to these. Also, if necessary, a second gate This may be provided on transistor 308t, transistor 302t, etc.

[0153] 《Configuration of imaging pixels》 The imaging pixel 308 is a photoelectric conversion element 308p and light irradiated onto the photoelectric conversion element 308p. It is equipped with an imaging pixel circuit for detecting [something]. The imaging pixel circuit also includes a transistor 308t Includes.

[0154] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0155] Other configurations The touch panel 300 is equipped with wiring 311 that can supply signals, and terminal 319 is It is provided in wiring 311. Furthermore, it is used to supply signals such as image signals and synchronization signals. The FPC309(1) is electrically connected to terminal 319.

[0156] Note that a printed circuit board (PWB) may be attached to FPC309(1). stomach.

[0157] Transistors formed in the same process are referred to as transistor 302t, transistor 303, and It can be applied to transistors such as the 308t transistor.

[0158] Transistors have structures such as bottom gate type and top gate type. An engine can be applied.

[0159] In addition to the gate, source, and drain of transistors, various components that make up a touch panel are also included. Materials that can be used for wires and electrodes include aluminum, titanium, chromium, and nickel. Kel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten A single metal consisting of n, or an alloy with n as the main component, is used as a single-layer or laminated structure. Yes, for example, a single-layer structure of an aluminum film containing silicon, or an aluminum film on a titanium film. A two-layer structure with stacked layers, a two-layer structure with an aluminum film stacked on a tungsten film, copper-magnesium A two-layer structure in which a copper film is laminated on a nesium-aluminum alloy film, and a copper film is laminated on a titanium film. A two-layer structure, a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film Then, an aluminum film or a copper film is laminated on top of the titanium film or titanium nitride film, Furthermore, a three-layer structure is formed by forming a titanium film or titanium nitride film on top of it, or a molybdenum film or nitride film. A molybdenum film and an aluminum film layered on top of the molybdenum film or molybdenum nitride film. Alternatively, a copper film is laminated, and then a molybdenum film or molybdenum nitride film is formed on top of it, creating a three-layer structure. It has a structure, etc. Furthermore, a transparent conductive material containing indium oxide, tin oxide, or zinc oxide is used. This may also be done. Furthermore, using copper containing manganese improves the controllability of the shape through etching. Therefore, it is preferable.

[0160] Transistors such as transistor 302t, transistor 303t, transistor 308t For example, silicon is preferably used as the semiconductor in which the channel is formed. Amorphous silicon may be used as the silicon, but crystalline silicon is particularly preferred. It is preferable to use microcrystalline silicon, polycrystalline silicon, monocrystalline silicon, etc. It is preferable to use [this material]. In particular, polycrystalline silicon can be formed at a lower temperature compared to single-crystal silicon. Furthermore, it offers higher field-effect mobility and greater reliability compared to amorphous silicon. By applying polycrystalline semiconductors like this to pixels, the aperture ratio of the pixels can be improved. Furthermore, even when pixels have extremely high resolution, the gate drive circuit and source drive circuit are separated. This makes it possible to form the components on the same substrate as the base material, reducing the number of components that make up electronic devices. It is possible.

[0161] Here, the pixels provided in each display area of ​​the display panel 110 and the driving circuits used in each are It is preferable to apply oxide semiconductors to semiconductor devices such as transistors. It is preferable to use an oxide semiconductor with a larger band gap than silicon. If a semiconductor material with a wider band gap and lower carrier density than CON is used, This is preferable because it reduces the current when the transistor is off.

[0162] For example, the above oxide semiconductor may contain at least indium (In) or zinc (Zn). Preferably contains ). More preferably In-M-Zn oxide (where M is Al, Ti, Contains oxides represented by metals such as Ga, Ge, Y, Zr, Sn, La, Ce, or Hf. nothing.

[0163] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. , or oriented perpendicular to the upper surface of the semiconductor layer, and without grain boundaries between adjacent crystal portions. It is preferable to use an oxide semiconductor film.

[0164] Such oxide semiconductors do not have grain boundaries, so when the display panel is curved... This suppresses the formation of cracks in the oxide semiconductor film due to stress. Therefore, Such oxide semiconductors are suitable for use in flexible, curved display panels and the like. It is possible to be there.

[0165] By using such materials as semiconductor layers, fluctuations in electrical properties are suppressed, and reliability is improved. High transistors can be achieved.

[0166] Furthermore, its low off-current allows the charge stored in the capacitor via the transistor to be released over a long period of time. It is possible to hold it over time. By applying such transistors to pixels, each It also becomes possible to stop the drive circuit while maintaining the gradation of the image displayed in the display area. As a result, it is possible to create electronic devices with extremely reduced power consumption.

[0167] Furthermore, regarding preferred forms of oxide semiconductors applicable to semiconductor layers and methods for forming them, This will be explained in detail in later embodiments.

[0168] Here, we will describe a method for forming a flexible light-emitting panel.

[0169] For convenience, this definition includes a configuration that includes pixels and driving circuits, or optical components such as color filters. The configuration will be called the element layer. The element layer includes, for example, a display element, and in addition to the display element, a display It includes wiring that electrically connects to the elements, and elements such as transistors used in pixels and circuits. That's good too.

[0170] In this context, the support having an insulating surface on which the element layer is formed is referred to as the substrate. Let's assume that.

[0171] A method for forming an element layer on a substrate having a flexible insulating surface is to directly place the element layer on the substrate. A method for forming a contact element layer, and a method for forming an element layer on a support substrate having a different rigidity from the base material. Another method involves separating the element layer from the support substrate and transferring the element layer onto the substrate.

[0172] If the material constituting the base material has heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the element fixed to the support substrate, transport within and between devices becomes easier. It is preferable because it makes things easier.

[0173] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to the substrate, first the support A release layer and an insulating layer are laminated onto a support base, and an element layer is formed on the insulating layer. Subsequently, a support base The material and element layer are separated and transferred to the substrate. At this time, the interface between the support substrate and the peeled layer, and the peeled layer and the insulating layer You should select a material that will cause delamination at the interface of the marginal layer or within the delamination layer.

[0174] For example, a layer containing a high-melting-point metal material such as tungsten as a release layer, and oxidation of the said metal material Layers containing materials are stacked, and multiple layers of silicon nitride or silicon oxynitride are stacked on top of the release layer. It is preferable to use a high melting point metal material. Using a high melting point metal material increases the degree of freedom in the device layer formation process. Therefore, it is desirable.

[0175] Delamination can be achieved by applying mechanical force, etching the delamination layer, or by using the delamination interface. The peeling may also be performed by dropping a liquid onto a portion of the surface and allowing it to penetrate the entire peeling interface. Alternatively, delamination may be performed by applying heat to the delamination interface, taking advantage of the difference in thermal expansion.

[0176] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, a peeling layer may not be necessary. For example, using glass as the support substrate and an organic resin such as polyimide as the insulating layer By locally heating a portion of the organic resin using laser light or the like, a starting point for delamination is formed. Alternatively, delamination may be performed at the interface between the glass and the insulating layer. A metal layer is placed between the edge layers, and the metal layer is heated by passing an electric current through it. In this case, delamination may be performed at the interface between the metal layer and the insulating layer. The insulating layer can be used as a substrate.

[0177] Examples of flexible substrates include polyethylene terephthalate (PET) and poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resin, Liimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polystyrene sulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Examples include resins, polyamide-imide resins, and polyvinyl chloride resins. In particular, the coefficient of thermal expansion is It is preferable to use a material with a low coefficient of thermal expansion, for example, a material with a coefficient of thermal expansion of 30 × 10 -6 / K or less Polyamide-imide resins, polyimide resins, PET, etc., can be suitably used. A substrate (also called a prepreg) in which resin is impregnated into a fibrous material, or an inorganic filler mixed with organic resin. It is also possible to use a substrate with a reduced coefficient of thermal expansion.

[0178] If the above material contains fibrous material, the fibrous material is a high strength organic or inorganic compound. High-strength fibers are used. Specifically, high-strength fibers are fibers with a high tensile modulus or Young's modulus. This refers to polyvinyl alcohol-based fibers, polyester fibers, and poly- Aramid fibers, polyethylene fibers, aramid fibers, poly(p-phenylenebenzobisoxide) Examples include sazole fibers, glass fibers, or carbon fibers. Examples of glass fibers include E-glass. Examples include glass fibers using S glass, D glass, Q glass, etc. These are woven fabrics. Alternatively, it can be used in the form of a nonwoven fabric, and a structure made by impregnating this fiber with resin and hardening the resin is made flexible. It may also be used as a substrate having flexibility. As a substrate having flexibility, it may be made of fibers and resin. Using structures improves reliability against damage caused by bending and localized compression, therefore it is preferable. stomach.

[0179] Furthermore, one embodiment of the present invention is an active matrix display device having active elements in its pixels. A formula or a passive matrix system that does not have active elements in the pixels can be used.

[0180] In the active matrix system, the active elements (active elements, nonlinear elements) are, In addition to transistors, various active elements (active elements, nonlinear elements) can be used. This can be done. For example, MIM (Metal Insulator Metal), or T It is also possible to use elements such as FD (Thin Film Diode). Because it involves fewer manufacturing steps, it is possible to reduce manufacturing costs or improve yield. Alternatively, these elements can improve the aperture ratio due to their small size. This allows for lower power consumption and higher brightness.

[0181] Other than the active matrix method, there are active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements. Because it does not use sub-elements or nonlinear elements, the manufacturing process is simpler, resulting in reduced manufacturing costs or higher yield. This can improve the performance. Alternatively, active elements (active elements, nonlinear elements) can be used. Because it does not exist, the aperture ratio can be improved, leading to lower power consumption or higher brightness. It is possible.

[0182] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0183] (Embodiment 6) In this embodiment, a foldable electronic device that can be applied to an electronic device according to one aspect of the present invention. The configuration of the touch panel will be explained with reference to Figure 29.

[0184] Figure 29 is a cross-sectional view of the touch panel 500.

[0185] The touch panel 500 includes a display unit 501 and a touch sensor 595. The Nel 500 has substrates 510, 570 and 590. Note that substrate 510, Both substrate 570 and substrate 590 are flexible.

[0186] The display unit 501 consists of a substrate 510, a plurality of pixels on the substrate 510, and a signal supply to those pixels. It has multiple wirings 511 that can be connected. The multiple wirings 511 are located on the outer periphery of the substrate 510. It is routed all the way to the terminal 519, and a part of it makes up terminal 519. Terminal 519 is FPC509( 1) Connect electrically to it.

[0187] <Touch sensor> The circuit board 590 includes a touch sensor 595 and multiple connections electrically connected to the touch sensor 595. It is equipped with wiring 598. Multiple wirings 598 are routed around the outer periphery of the circuit board 590, and part of them This constitutes a terminal. This terminal is then electrically connected to FPC509(2).

[0188] For example, a capacitive touch sensor can be used as the touch sensor 595. Quantitative methods include surface capacitance and projected capacitance.

[0189] Projected capacitance systems are classified into self-capacitance and mutual-capacitance types, mainly based on differences in their driving methods. There are several advantages. Using a mutual capacitance method is preferable because it enables simultaneous multi-point detection.

[0190] The following section describes the case where a projected capacitive touch sensor is applied.

[0191] Furthermore, various sensors capable of detecting proximity or contact with objects such as fingers are suitable. It can be used.

[0192] The projected capacitive touch sensor 595 has electrodes 591 and 592. 591 is electrically connected to one of the multiple wires 598, and electrode 592 is connected to one of the multiple wires 598 Connect electrically to any of the others.

[0193] The wiring 594 electrically connects the two electrodes 591 that sandwich electrode 592. A shape that minimizes the area of ​​the intersection between pole 592 and wiring 594 is preferable. This reduces the area where electrodes are not provided, thereby reducing unevenness in transmittance. As a result, it is possible to reduce the brightness unevenness of the light transmitted through the touch sensor 595.

[0194] Note that the shapes of electrodes 591 and 592 can take on various forms. For example, multiple electrodes 5 Arrange 91 so that there are as few gaps as possible, and connect electrode 592 and electrode 59 through the insulating layer. It is also possible to configure multiple units spaced apart so that there are areas that do not overlap with unit 1. If a dummy electrode, electrically insulated from the two contacting electrodes 592, is placed between them, This is preferable because it reduces the area of ​​regions with different transmittances.

[0195] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, and electrode 592, electrode 591 and the insulating layer 593 covering electrode 592 and adjacent electrode 591 It is equipped with wiring 594 for electrical connection.

[0196] The adhesive layer 597 is applied to the substrate 590 so that the touch sensor 595 overlaps the display unit 501. It is bonded to board 570.

[0197] Electrodes 591 and 592 are formed using a light-transmitting conductive material. Examples of conductive materials include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide, zinc oxide with added gallium, or graphene are used. It is possible.

[0198] After depositing a translucent conductive material onto the substrate 590 by sputtering, Various patterning techniques, such as trisography, are used to remove unwanted parts, and electrode 59 Electrode 1 and electrode 592 can be formed. Graphene can be produced by CVD, as well as by graphite oxide The material may be formed by applying a solution containing dispersed particles and then reducing it.

[0199] Furthermore, the materials used for the insulating layer 593 include, for example, resins such as acrylic and epoxy. In addition to resins containing siloxane bonds, silicon oxide, silicon oxide nitride, and aluminum oxide are also used. Inorganic insulating materials such as those mentioned above can also be used.

[0200] Furthermore, an opening reaching electrode 591 is provided in the insulating layer 593, and wiring 594 is adjacent to the electrode. 591 is electrically connected. Translucent conductive material increases the aperture ratio of the touch panel. Therefore, it can be suitably used for wiring 594. Also, electrodes 591 and 59 Materials with higher conductivity than 2 can reduce electrical resistance and are therefore suitable for use in wiring 594. can.

[0201] One electrode 592 extends in one direction, and multiple electrodes 592 are arranged in a stripe pattern. .

[0202] Wiring 594 is provided so as to intersect with electrode 592.

[0203] A pair of electrodes 591 are provided flanking one electrode 592, and the wiring 594 is connected to the pair of electrodes 591 They are electrically connected.

[0204] Furthermore, the multiple electrodes 591 do not necessarily need to be arranged in a direction perpendicular to one electrode 592. Alternatively, they may be arranged to form an angle of less than 90 degrees.

[0205] One of the wires 598 is electrically connected to electrode 591 or electrode 592. The part functions as a terminal. Wiring 598 can be, for example, aluminum, gold, platinum, or silver. Nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or paraben. Metallic materials such as zinc, or alloy materials containing such metallic materials, can be used.

[0206] Furthermore, an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0207] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0208] The connecting layer 599 is an anisotropic conductive film (ACF: Anisotropic Co (Inductive Film) and anisotropic conductive paste (ACP: Anisotropic You can use things like (c) Conductive Paste.

[0209] The adhesive layer 597 is translucent. For example, thermosetting resins or UV-curing resins can be used. This can be done, specifically by having acrylic, urethane, epoxy, or siloxane bonds. Resins such as plastics can be used.

[0210] <Display section> The display unit 501 comprises multiple pixels arranged in a matrix. The pixels are display elements and It includes a pixel circuit that drives the display element.

[0211] In this embodiment, a white organic electroluminescent element is applied as a display element. The following will be explained, but the display elements are not limited to these. Different colored organic electroluminescent elements Electroluminescent elements, for example, a red organic electroluminescent element and a blue organic electroluminescent element You may also use a trollescent element and a green organic electroluminescent element. stomach.

[0212] For example, as display elements, in addition to organic electroluminescent elements, electrophoretic methods and electro Display elements (also called electronic ink) that display information using a powder fluid method, shutter type Various display elements can be used, such as MEMS display elements and optical interference type MEMS display elements. Yes, it is possible. Furthermore, a suitable configuration for the display element to be applied can be selected from various pixel circuits. It is possible.

[0213] The substrate 510 is a flexible substrate 510b, preventing the unintended diffusion of impurities into the light-emitting element. A protective barrier film 510a and an adhesive layer 51 for bonding the substrate 510b to the barrier film 510a. It is a laminate made up of layers of 0c.

[0214] The substrate 570 is a flexible substrate 570b, preventing the unintended diffusion of impurities into the light-emitting element. The protective barrier film 570a and the substrate 570b are bonded together by an adhesive layer 57 It is a laminate of 0c.

[0215] The sealing material 560 bonds the substrate 570 and the substrate 510 together. The sealing material 560 is more airborne than... It has a high refractive index. Also, when light is extracted to the sealing material 560 side, the sealing material 560 is light It also serves as a junction layer. The pixel circuit and light-emitting element (e.g., light-emitting element 550R) are connected to the substrate 510. It is located between circuit board 570.

[0216] Pixel composition Each pixel includes a sub-pixel 502R, which in turn includes a light-emitting module 580R.

[0217] Sub-pixel 502R can supply power to the light-emitting element 550R and the light-emitting element 550R. It features a pixel circuit including a transistor 502t. Also, the light-emitting module 580R is It comprises a light-emitting element 550R and an optical element (e.g., a colored layer 567R).

[0218] The light-emitting element 550R consists of a lower electrode, an upper electrode, and a light-emitting organic material between the lower electrode and the upper electrode. It has a layer containing a compound.

[0219] The light-emitting module 580R has a colored layer 567R in the direction from which light is extracted. Any material that transmits light of a specific wavelength is acceptable, for example, one that exhibits red, green, or blue light. A material that selectively transmits light can be used. A region that allows the light emitted by the child to pass through directly may be provided.

[0220] Furthermore, if the sealing material 560 is provided on the side from which light is extracted, the sealing material 560 is a light-emitting element It is in contact with the sublayer 550R and the colored layer 567R.

[0221] The colored layer 567R is located in a position that overlaps with the light-emitting element 550R. As a result, the light-emitting element 550 A portion of the light emitted by R passes through the colored layer 567R and illuminates the light-emitting module in the direction of the arrow shown in the figure. It is ejected to the outside of the Lu580R.

[0222] 《Display Unit Configuration》 The display unit 501 has a light-shielding layer 567BM in the direction from which light is emitted. It is provided so as to surround the colored layer (for example, colored layer 567R).

[0223] The display unit 501 is provided with an anti-reflective layer 567p in a position that overlaps the pixels. For p, for example, a circular polarizer can be used.

[0224] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Furthermore, the insulating film 521 is used as a layer to flatten the irregularities caused by the pixel circuit. Furthermore, a laminated film containing a layer that can suppress the diffusion of impurities can be suitable for the insulating film 521. It can be used. This prevents the diffusion of unexpected impurities in transistors such as the 502t. This can suppress the decline in reliability.

[0225] The display unit 501 has a light-emitting element (for example, a light-emitting element 550R) on the insulating film 521.

[0226] The display unit 501 has a partition wall 528 on the insulating film 521 that overlaps the end of the lower electrode. A spacer is provided on the partition wall 528 to control the distance between substrate 510 and substrate 570.

[0227] 《Configuration of the scan line drive circuit》 The scan line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. Furthermore, the drive circuit can be formed on the same substrate using the same process as the pixel circuit.

[0228] Other configurations The display unit 501 is equipped with wiring 511 that can supply signals, and terminal 519 is connected to wiring 5 It is located at 11. It can also supply signals such as image signals and synchronization signals. FPC509(1) is electrically connected to terminal 519.

[0229] Note that a printed circuit board (PWB) may be attached to FPC509(1). stomach.

[0230] <Example of display unit modification 1> Various transistors can be applied to the display unit 501.

[0231] Figure 29(A) shows the configuration when a bottom-gate transistor is applied to the display unit 501. This is illustrated in Figure 29(B).

[0232] For example, a semiconductor layer containing oxide semiconductors, amorphous silicon, etc. is shown in Figure 29(A). This can be applied to the transistors 502t and 503t shown.

[0233] For example, a semiconductor layer containing polycrystalline silicon, etc., is used in the transistor 5 shown in Figure 29(B). It can be applied to the 02t and transistor 503t.

[0234] Figure 29(C) shows the configuration when a top-gate type transistor is applied to the display unit 501. This is illustrated in the diagram.

[0235] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film, as shown in Figure 2. This applies to transistors 502t and 503t shown in 9(C). can.

[0236] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0237] (Embodiment 7) In this embodiment, a foldable electronic device that can be applied to an electronic device according to one aspect of the present invention. The configuration of the touch panel will be explained with reference to Figure 30.

[0238] Figure 30 is a cross-sectional view of the touch panel 500B.

[0239] The touch panel 500B described in this embodiment processes the supplied image information into transistors The display unit 501 is provided on the side where the display unit is located, and the touch sensor is located at the base of the display unit. The fact that it is located on the board 510 side is different from the touch panel 500 described in Embodiment 6. Here, we will explain in detail the different configurations and the parts where similar configurations can be used. The above explanation is used as a reference.

[0240] <Display section> The display unit 501 comprises multiple pixels arranged in a matrix. The pixels are display elements and It includes a pixel circuit that drives the display element.

[0241] Pixel composition Each pixel includes a sub-pixel 502R, which in turn includes a light-emitting module 580R.

[0242] Sub-pixel 502R can supply power to the light-emitting element 550R and the light-emitting element 550R. It features a pixel circuit including a 502t transistor.

[0243] The light-emitting module 580R consists of a light-emitting element 550R and an optical element (e.g., a colored layer 567R). It is equipped with.

[0244] The light-emitting element 550R consists of a lower electrode, an upper electrode, and a light-emitting organic material between the lower electrode and the upper electrode. It has a layer containing a compound.

[0245] The light-emitting module 580R has a colored layer 567R in the direction from which light is extracted. Any material that transmits light of a specific wavelength is acceptable, for example, one that exhibits red, green, or blue light. A material that selectively transmits light can be used. A region that allows the light emitted by the child to pass through directly may be provided.

[0246] The colored layer 567R is located in a position that overlaps with the light-emitting element 550R. Also, as shown in Figure 30(A) The optical element 550R emits light towards the side where the transistor 502t is located. Furthermore, some of the light emitted by the light-emitting element 550R passes through the colored layer 567R, as shown by the arrow in the figure. It is emitted to the outside of the directional light-emitting module 580R.

[0247] 《Display Unit Configuration》 The display unit 501 has a light-shielding layer 567BM in the direction from which light is emitted. It is provided so as to surround the colored layer (for example, colored layer 567R).

[0248] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Furthermore, the insulating film 521 is used as a layer to flatten the irregularities caused by the pixel circuit. Furthermore, a laminated film containing a layer that can suppress the diffusion of impurities can be suitable for the insulating film 521. This can be used to prevent, for example, unexpected impurities from diffusing from the colored layer 567R. This can suppress the decrease in reliability of transistors such as the 502t.

[0249] <Touch sensor> The touch sensor 595 is located on the circuit board 510 side of the display unit 501 (Figure 30(A)). reference).

[0250] The adhesive layer 597 is located between the substrate 510 and the substrate 590, and connects the display unit 501 and the touch sensor 5 Glue together 95.

[0251] <Example of display unit modification 1> Various transistors can be applied to the display unit 501.

[0252] Figure 30(A) shows the configuration when a bottom-gate transistor is applied to the display unit 501. This is illustrated in Figure 30(B).

[0253] For example, a semiconductor layer containing oxide semiconductors, amorphous silicon, etc. is shown in Figure 30(A). This can be applied to the transistors 502t and 503t shown.

[0254] For example, a semiconductor layer containing polycrystalline silicon, etc., is used in the transistor 5 shown in Figure 30(B). It can be applied to the 02t and transistor 503t.

[0255] Figure 30(C) shows the configuration when a top-gate type transistor is applied to the display unit 501. This is illustrated in the diagram.

[0256] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film, as shown in Figure 3. This applies to transistors 502t and 503t shown in 0(C). can.

[0257] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0258] (Embodiment 8) In this embodiment, the semiconductor layer of a semiconductor device applicable to a display panel according to one aspect of the present invention is A suitable oxide semiconductor for use will be described.

[0259] Oxide semiconductors have a large energy gap of 3.0 eV or more, making oxide semiconductors suitable for An oxide semiconductor film obtained by processing under certain conditions and sufficiently reducing its carrier density is applied. In a transistor, the leakage current between the source and drain in the off state (off current) This can be made extremely low compared to conventional silicon-based transistors. .

[0260] Applicable oxide semiconductors include at least indium (In) or zinc (Zn). It is preferable that the oxide semiconductor contains ) and is particularly preferable that it contains In and Zn. As stabilizers to reduce variations in the electrical characteristics of transistors using these, In addition, gallium (Ga), tin (Sn), hafnium (Hf), and zirconium (Zr) Titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (for example) One of the following is selected from cerium (Ce), neodymium (Nd), and gadolinium (Gd). It is preferable that multiple species are included.

[0261] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and in-Zn-based acids. compounds, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg acids In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (IGZO (Also written as), In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga- Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxides, In-Hf-Z n-based oxides, In-Zr-Zn oxides, In-Ti-Zn oxides, In-Sc-Zn oxides In-Y-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides Materials, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn ​​oxides, I n-Sn-Ga-Zn oxides, In-Hf-Ga-Zn oxides, In-Al-Ga- Zn oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, I n-Hf-Al-Zn oxides can be used.

[0262] Here, an In-Ga-Zn oxide is an oxide having In, Ga, and Zn as its main components. It refers to the material itself, and the ratio of In, Ga, and Zn is irrelevant. Also, other than In, Ga, and Zn... It may contain metallic elements.

[0263] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0, and m is not an integer) Materials represented by ) may also be used. Note that M is selected from Ga, Fe, Mn, and Co. This refers to one or more metallic elements, or the elements used as stabilizers as described above. Also, as an oxide semiconductor, In2SnO5(ZnO) n (n > 0, and n is an integer) You may use the materials indicated as follows.

[0264] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=1:3:2, In:Ga :Zn=1:3:4, In:Ga:Zn=1:3:6, In:Ga:Zn=3:1:2A or In-Ga-Zn oxides with an atomic ratio of In:Ga:Zn=2:1:3 and their composition It is preferable to use an oxide from the vicinity of [the specified location].

[0265] When an oxide semiconductor film contains a large amount of hydrogen, it combines with the oxide semiconductor, causing water to form. Some of the elements become donors, generating electrons, which are carriers. This causes the transistor The threshold voltage of the film shifts in the negative direction. Therefore, the formation of oxide semiconductor films is affected. Subsequently, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or water from the oxide semiconductor film. It is preferable to remove impurities and purify the material to a high degree to minimize its content.

[0266] Furthermore, by dehydrating (dehydrogenating) the oxide semiconductor film, Oxygen levels may also decrease at the same time. Therefore, dehydration treatment of oxide semiconductor films (dehydration) A process to add oxygen to an oxide semiconductor film to compensate for the increased oxygen deficiency caused by the chemical treatment. It is preferable to do so. In this specification, etc., when oxygen is supplied to an oxide semiconductor film, This is sometimes referred to as oxygenation treatment, or the stoichiometric composition of oxygen contained in oxide semiconductor films. The case of making it more than that may be referred to as the peroxidation treatment.

[0267] Thus, the oxide semiconductor film is hydrogen or moisture removed by the dehydration treatment (dehydrogenation treatment), and the oxygen deficiency is compensated by the oxygen addition treatment, whereby an i-type (intrinsic) or an oxide semiconductor film that is substantially i-type and extremely close to the i-type (intrinsic) can be obtained. Note that substantially intrinsic means that carriers derived from donors in the oxide semiconductor film are extremely few (close to zero), and the carrier density is 1×10 17 / cm 3 or less, 1×10 16 / cm 3 or less , 1×10 15 / cm 3 or less, 1×10 14 / cm 3 or less, 1×10 13 / cm 3 or less, particularly preferably 8×10 11 / cm 3 or less, more preferably 1×10 11 / cm 3 or less , more preferably 1×10 10 / cm 3 or less, and 1×10 -9 / cm 3 or more is what is meant.

[0268] Also, in this way, a transistor including an i-type or substantially i-type oxide semiconductor film can achieve extremely excellent off-current characteristics. For example, the drain current when a transistor using an oxide semiconductor film is in the off state is 1×10 A or less at room temperature (about 25°C), -18 preferably 1×10 A or less, more preferably 1×10 -21 A or less, or 1×10 -24 A or less at 85 °C, 1×10 -15A or less, preferably 1 × 10 -18 A or less, more preferably 1× 10 -21 It can be less than or equal to A. Note that the transistor being in the off state is n-channel. In the case of a transistor of this type, this refers to the state where the gate voltage is sufficiently lower than the threshold voltage. Specifically, if the gate voltage is 1V, 2V, or 3V lower than the threshold voltage The transistor turns off. Note that these current values ​​are between the source and drain. These are examples of voltages such as 1V, 5V, or 10V.

[0269] The structure of oxide semiconductor films will be described below.

[0270] Oxide semiconductor films are broadly classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. Non-single-crystal oxide semiconductor films are CAAC-OS (C Axis Aligned Crystal Sturtine Oxide Semiconductor film, polycrystalline oxide semiconductor This refers to films, microcrystalline oxide semiconductor films, amorphous oxide semiconductor films, etc.

[0271] First, let's explain the CAAC-OS film. Note that CAAC-OS is referred to as CANC(C This is called an oxide semiconductor having (-axis aligned nanocrystals). It is also possible.

[0272] CAAC-OS film is an oxide semiconductor film having multiple c-axis oriented crystalline regions. .

[0273] CAAC-OS film is examined using a transmission electron microscope (TEM). When observed with a tron ​​microscope, a clear boundary between crystalline regions is observed, i.e. The grain boundaries (also called crystal grain boundaries) cannot be identified. Therefore, C AAC-OS films are less susceptible to the decrease in electron mobility caused by grain boundaries.

[0274] The CAAC-OS film was observed by TEM from a direction roughly parallel to the sample surface (cross-sectional TEM view). (Inference) It can be confirmed that in the crystalline part, metal atoms are arranged in layers. Each of these layers has a concave surface on the surface (also called the surface to be formed) or upper surface that forms the CAAC-OS film. The shape reflects a convexity and is arranged parallel to the surface or top surface of the CAAC-OS film to be formed.

[0275] On the other hand, the CAAC-OS film was observed by TEM from a direction roughly perpendicular to the sample surface (plane T). EM observation reveals that in the crystalline region, metal atoms are arranged in a triangular or hexagonal shape. This can be confirmed. However, no regularity is observed in the arrangement of metal atoms between different crystalline regions. do not have.

[0276] Figure 31(a) is a cross-sectional TEM image of the CAAC-OS film. Figure 31(b) is a cross-sectional TEM image of the CAAC-OS film. This is a further magnified cross-sectional TEM image of 31(a), with the atomic arrangement exaggerated for easier understanding. The key signature is indicated.

[0277] Figure 31(c) shows the area circled (diameter approximately 4) between AO and A' in Figure 31(a). This is a local Fourier transform image of nm. From Figure 31(c), c-axis orientation is observed in each region. This can be confirmed. Also, since the orientation of the c-axis is different between A and O and between O and A', different G This suggests it is rain. Also, between A and O, the c-axis angles are 14.3° and 16°. It can be seen that it changes gradually and continuously, such as 6° and 26.4°. Similarly, OA In between, the angle of the c-axis is -18.3°, -17.6°, and -15.9° in a gradual, continuous manner. It is clear that things are changing.

[0278] Furthermore, when electron diffraction is performed on the CAAC-OS film, oriented spots (bright spots) appear. Observed. For example, on the upper surface of the CAAC-OS film, for example, between 1 nm and 30 nm. When electron diffraction using an electron beam (also called nanobeam electron diffraction) is performed, a spot is observed. (See Figure 32(A).)

[0279] Cross-sectional TEM observation and planar TEM observation revealed that the crystalline portion of the CAAC-OS film exhibits orientation. It can be seen that this is the case.

[0280] Furthermore, most of the crystalline parts contained in the CAAC-OS film are cubes with sides less than 100 nm long. It is small enough to fit inside the body. Therefore, the crystalline portion contained in the CAAC-OS membrane has sides of 10. This also includes cases where the size is less than nm, less than 5 nm, or less than 3 nm and fits within a cube. Furthermore, multiple crystalline regions contained in the CAAC-OS film connect to form one large crystalline region. A region may be formed. For example, in a planar TEM image, at 2500 nm 2 Above 5μm 2 or greater than 1000 μm 2 In some cases, crystal regions exceeding the above size may be observed.

[0281] X-ray diffraction (XRD) of CAAC-OS film When structural analysis is performed using the instrument, for example, CAAC-OS having InGaZnO4 crystals is found. Out-of-plane analysis of the film showed a peak at a diffraction angle (2θ) of around 31°. This peak may appear. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have c-axis orientation, and the c-axis is on the surface to be formed or on the upper surface. It can be confirmed that it is oriented in a roughly vertical direction.

[0282] On the other hand, in-p X-rays are incident on the CAAC-OS film from a direction approximately perpendicular to the c-axis. In analysis using the lane method, a peak may appear when 2θ is around 56°. This is attributed to the (110) plane of the InGaZnO4 crystal. For a crystalline semiconductor film, fix 2θ to approximately 56° and use the normal vector of the sample surface as the axis (φ axis). When the analysis (φ scan) is performed while rotating the sample, a crystal plane equivalent to the (110) plane is found. Six peaks attributable to this are observed. In contrast, in the case of the CAAC-OS film, 2θ Even when fixed at approximately 56° and scanned using the φ scan function, no clear peak appears.

[0283] From the above, it can be seen that in CAAC-OS films, the orientation of the a-axis and b-axis between different crystalline regions is Although irregular, it has c-axis orientation, and the c-axis is parallel to the normal vector of the formed surface or the upper surface. It can be seen that it is oriented in a specific direction. Therefore, the layered structure confirmed by the aforementioned cross-sectional TEM observation is Each layer of arranged metal atoms is a plane parallel to the ab-plane of the crystal.

[0284] Furthermore, the crystalline portion is formed when the CAAC-OS film is deposited, or during crystallization treatments such as heat treatment. It is formed when the process is carried out. As mentioned above, the c-axis of the crystal is aligned with the surface on which the CAAC-OS film is formed. Or it is oriented in a direction parallel to the normal vector of the upper surface. Therefore, for example, the CAAC-OS film When the shape is altered by etching or other means, the c-axis of the crystal becomes the target area for CAAC-OS film formation. The normal vector may not be parallel to the normal vector of the face or top surface.

[0285] Furthermore, the distribution of c-axis oriented crystalline regions in the CAAC-OS film does not need to be uniform. For example, the crystalline portion of the CAAC-OS film may be formed by crystal growth from near the top surface of the CAAC-OS film. When formed in this manner, the region near the top surface will have a more c-axis-oriented crystal structure than the region near the surface being formed. The proportion of impurities can increase. Also, CAAC-OS films with added impurities The region to which the substance is added is altered, and regions with a different proportion of partially c-axis-oriented crystals are formed. Sometimes that happens.

[0286] Furthermore, the out-of-plane CAAC-OS film having InGaZnO4 crystals Analysis using this method revealed that in addition to the peak near 2θ = 31°, there is also a peak near 2θ = 36°. In some cases, this may occur. Peaks near 2θ of 36° indicate c-axis orientation in a portion of the CAAC-OS film. This indicates the presence of crystals that do not possess properties. The CAAC-OS film has a 2θ of approximately 31°. It is preferable that a peak is shown and that no peak is shown near 36° for 2θ.

[0287] CAAC-OS films are oxide semiconductor films with low impurity concentrations. The impurities include hydrogen and carbon. These are elements other than the main components of oxide semiconductor films, such as silicon and transition metal elements. In particular, silicon Elements such as condensate, which have a stronger bonding force with oxygen than the metal elements that make up oxide semiconductor films, are acidic. By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disrupted, reducing its crystallinity. This is a contributing factor. Also, heavy metals such as iron and nickel, argon, and carbon dioxide have a high atomic ratio. Because of its large diameter (or molecular radius), when it is contained within an oxide semiconductor film, the oxide semiconductor film This disrupts the atomic arrangement and reduces crystallinity. Pure substances can act as carrier traps or carrier sources.

[0288] Furthermore, CAAC-OS films are oxide semiconductor films with a low defect level density. For example, oxidation Oxygen vacancies in semiconductor films can act as carrier traps or capture hydrogen. This can sometimes become a source of carrier transmission.

[0289] A low impurity concentration and low defect level density (few oxygen vacancies) are referred to as high-purity intrinsic or This is essentially called high-purity intrinsic. Oxide semiconductors that are high-purity intrinsic or substantially high-purity intrinsic. Because the membrane has fewer carrier sources, the carrier density can be lowered. Therefore, A transistor using this oxide semiconductor film exhibits electrical characteristics such as a negative threshold voltage ( - Also called Marieion.) It rarely becomes high purity genuine or substantially high purity. Intrinsic oxide semiconductor films have few carrier traps. Therefore, the oxide semiconductor... Transistors using film have small variations in electrical characteristics and are highly reliable. Furthermore, the charge trapped in the carrier trap of the oxide semiconductor film requires time to be released. It can last for a long time and behave as if it were a fixed charge. Therefore, when the impurity concentration is high... Furthermore, transistors using oxide semiconductor films with a high defect level density exhibit unstable electrical properties. There are cases where this occurs.

[0290] Furthermore, transistors using CAAC-OS films exhibit electrical properties when irradiated with visible light or ultraviolet light. Sexual variation is small.

[0291] Next, we will explain microcrystalline oxide semiconductor films.

[0292] Microcrystalline oxide semiconductor films can be clearly observed using TEM. In some cases, this may not be possible. The crystalline portion contained in the microcrystalline oxide semiconductor film is between 1 nm and 100 nm. They are often smaller than 1 nm, or between 1 nm and 10 nm in size. In particular, between 1 nm and 10 nm Nanocrystals (nc: nanocrystals) are microcrystals of a size of 1 nm or less, or between 1 nm and 3 nm. An oxide semiconductor film having tal is made nc-OS (nanocrystalline O It is called an xide Semiconductor film. Also, an nc-OS film is, for example, T In some cases, grain boundaries cannot be clearly identified in images observed using EM. , an oxidation having RANC (Random Aligned nanocrystals) Material semiconductors, or NANCs (Non-Aligned nanocrystals) It can also be called an oxide semiconductor.

[0293] nc-OS films are used in minute regions (for example, regions between 1 nm and 10 nm, especially regions between 1 nm and 10 nm). The atomic arrangement has periodicity in the region of 3 nm or less. In addition, the nc-OS film is different There is no regularity in the crystal orientation between the crystalline regions. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS films may be indistinguishable from amorphous oxide semiconductor films. There are cases where this occurs. For example, XRD using X-rays with a diameter larger than that of the crystalline region on an nc-OS film. When structural analysis is performed using the apparatus, the out-of-plane method analyzes the crystal planes. The indicated peak is not detected. Also, the probe diameter is larger than that of the crystalline region in the nc-OS film. Electron diffraction (also called limited-field electron diffraction) is performed using an electron beam (for example, 50 nm or longer). Then, a diffraction pattern resembling a halo pattern is observed. On the other hand, for nc-OS films, Nanobeam electron diffractometers use electron beams with a probe diameter close to or smaller than the size of the crystal. When this is performed, a spot is observed. Furthermore, nanobeam electron diffraction is performed on the nc-OS film. In some cases, a region of high brightness may be observed in a circular (ring-shaped) pattern. Also, n When nanobeam electron diffraction is performed on a c-OS film, multiple spots are observed within a ring-shaped region. It may be measured (see Figure 32(B)).

[0294] nc-OS films are oxide semiconductor films with higher orderliness than amorphous oxide semiconductor films. Therefore, nc-OS films have a lower defect level density than amorphous oxide semiconductor films. However, Furthermore, the nc-OS film does not show any regularity in crystal orientation between different crystalline regions. Therefore, nc- OS films have a higher defect level density compared to CAAC-OS films.

[0295] Note that oxide semiconductor films include, for example, amorphous oxide semiconductor films, microcrystalline oxide semiconductor films, and C The AAC-OS film may be a multilayer film having two or more types.

[0296] When an oxide semiconductor film has multiple structures, the structural solution can be obtained using nanobeam electron diffraction. Analysis may be possible in some cases.

[0297] Figure 32(C) shows the electron gun chamber 10, the optical system 12 below the electron gun chamber 10, and below the optical system 12. The sample chamber 14, the optical system 16 below the sample chamber 14, the observation chamber 20 below the optical system 16, and observation A camera 18 installed in room 20 and a film room 22 below the observation room 20 are included in the transmission electric field. This shows the particle diffraction measurement device. Camera 18 is installed facing the inside of the observation room 20. It is not necessary to have a room 22.

[0298] Furthermore, Figure 32(D) shows the internal structure of the transmission electron diffraction measuring device shown in Figure 32(C). Inside the transmission electron diffraction measuring device, electrons emitted from the electron gun installed in the electron gun chamber 10 However, it is irradiated onto the substance 28 placed in the sample chamber 14 via the optical system 12. The resulting electrons are incident on a fluorescent screen 32 installed inside the observation room 20 via the optical system 16. On the light plate 32, a pattern appears corresponding to the intensity of the incident electrons, forming a transmitted electron diffraction pattern. It can measure n.

[0299] Camera 18 is positioned facing the fluorescent board 32 and captures the patterns that appear on the fluorescent board 32. It is possible to cast a shadow. A straight line passing through the center of the lens of camera 18 and the center of the fluorescent screen 32. The angle between the line and the top surface of the fluorescent board 32 is, for example, between 15° and 80°, or between 30° and above. The angle should be 75° or less, or between 45° and 70°. The smaller the angle, the more likely it is that the camera 18 will capture the image. The transmitted electron diffraction pattern that is shadowed will be greatly distorted. However, if the angle is known in advance... If so, it is also possible to correct the distortion of the obtained transmission electron diffraction pattern. In some cases, camera 18 may be placed in the film chamber 22. It may also be installed in the room chamber 22 so as to be opposite to the direction of incidence of electrons 24. In this case, a fluorescent screen A low-distortion transmission electron diffraction pattern can be captured from the back surface of the 32-lens microscope.

[0300] A holder for fixing the sample substance 28 is installed in the sample chamber 14. The holder has a structure that allows electrons to pass through material 28. The holder is, for example, a material The holder may have a function to move quality 28 along the X, Y, and Z axes. For example, 1nm to 10nm, 5nm to 50nm, 10nm to 100nm Move within ranges such as m or less, 50 nm to 500 nm, and 100 nm to 1 μm. It is sufficient to have a certain level of precision. These ranges should be determined by setting the optimal range based on the structure of material 28. Yes.

[0301] Next, the transmission electron diffraction pattern of the material is measured using the transmission electron diffraction measuring device described above. I will explain how to do it.

[0302] For example, as shown in Figure 32(D), the irradiation position of electrons 24, which are a nanobeam, in a material. By changing (scanning) the material, we can observe how the structure of the material changes. Yes, it is possible. In this case, if substance 28 is a CAAC-OS film, then as shown in Figure 32(A) A diffraction pattern is observed. Alternatively, if material 28 is an nc-OS film, then Figure 32(B) The diffraction pattern shown is observed.

[0303] By the way, even if substance 28 is a CAAC-OS film, it may be partially an nc-OS film, etc. Similar diffraction patterns may be observed. Therefore, the quality of the CAAC-OS film is , the percentage of the region in which the diffraction pattern of the CAAC-OS film is observed within a certain range (CAA It can sometimes be expressed as (also called the carbonization rate). For example, with a good quality CAAC-OS film If present, the CAAC conversion rate should be 50% or more, preferably 80% or more, and more preferably 90%. More preferably, the diffraction pattern is 95% or higher. The proportion of the region where this phenomenon is observed is denoted as the non-CAAC rate.

[0304] For example, immediately after film deposition (denoted as-sputtered), or in an oxygen-containing atmosphere. On the upper surface of each sample having a CAAC-OS film after heat treatment at 450°C in the air, a scan was performed. A transmission electron diffraction pattern was acquired while scanning. Here, scanning was performed at a speed of 5 nm / second for 60 seconds. The diffraction pattern is observed while scanning, and the observed diffraction pattern is captured as a still image every 0.5 seconds. The CAAC conversion rate was derived by converting to [a specific format]. Note that the electron beam used had a probe diameter of 1n. A nanobeam of m was used. Similar measurements were performed on six samples. Then, CAAC conversion was performed. The mean value across six samples was used to calculate the rate.

[0305] The CAAC conversion rate for each sample is shown in Figure 33(A). The CAAC-OS film immediately after deposition is C The AAC conversion rate was 75.7% (the non-CAAC conversion rate was 24.3%). Furthermore, heating at 450°C was performed. The CAAC conversion rate of the CAAC-OS film after treatment was 85.3% (the non-CAAC conversion rate was 14.7%). The results showed that the CAAC conversion rate was higher after the 450°C heat treatment compared to immediately after film formation. In other words, heat treatment at high temperatures (e.g., 400°C or higher) results in a lower non-CAAC conversion rate. It can be seen that the CAAC conversion rate increases. Also, when heat treatment is performed below 500°C, It can be seen that a CAAC-OS film with a high CAAC conversion rate can be obtained.

[0306] Here, most of the diffraction patterns that differ from those of the CAAC-OS film are similar to those of the nc-OS film. It was a folded pattern. Furthermore, the amorphous oxide semiconductor film could not be confirmed in the measurement area. It was not possible. Therefore, by heat treatment, a region having a structure similar to that of the nc-OS film was created. However, it is suggested that the structure of adjacent regions influences rearrangement and CAAC formation. .

[0307] Figures 33(B) and 33(C) show CAAC- immediately after film deposition and after heat treatment at 450°C. This is a planar TEM image of the OS film. By comparing Figure 33(B) and Figure 33(C), 4 The CAAC-OS film after heat treatment at 50°C shows that the film quality is more homogeneous. It can be seen that the film quality of the CAAC-OS film is improved by heat treatment at high temperatures.

[0308] Using this measurement method, it is possible to analyze the structure of oxide semiconductor films that have multiple structures. This can sometimes happen.

[0309] CAAC-OS films can be formed, for example, by the following method.

[0310] CAAC-OS films are, for example, polycrystalline oxide semiconductor sputtering targets. The film is deposited using a sputtering method.

[0311] By increasing the substrate temperature during film deposition, the migration of sputtering particles after reaching the substrate is reduced. This occurs. Specifically, the substrate temperature is between 100°C and 740°C, preferably between 200°C and 740°C. The film is deposited at a temperature of 500°C or lower. By increasing the substrate temperature during film deposition, sputtering particles are formed. When the sputtering particles reach the substrate, migration occurs on the substrate, and the sputtering particles become flat. The surface adheres to the substrate. At this time, the sputtering particles become positively charged, causing sputtering. Because the ring particles repel each other while adhering to the substrate, the sputtering particles become unevenly distributed and non-uniform. This allows for the formation of a CAAC-OS film with uniform thickness without overlapping.

[0312] By reducing the inclusion of impurities during film formation, it is possible to suppress the disruption of the crystalline state due to impurities. For example, the concentration of impurities present in the deposition chamber (such as hydrogen, water, carbon dioxide, and nitrogen) can be measured. It would be good to reduce it. Also, it would be good to reduce the impurity concentration in the film formation gas. Specifically, the dew point is A film-forming gas with a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0313] Furthermore, by increasing the oxygen content in the deposition gas and optimizing the power, plasma damage during film deposition can be reduced. It is preferable to reduce the amount of oxygen. The oxygen content in the film-forming gas is 30% by volume or more, preferably 100%. This is expressed as a percentage by volume.

[0314] Alternatively, the CAAC-OS film is formed by the following method.

[0315] First, a first oxide semiconductor film is deposited with a thickness of 1 nm or more and less than 10 nm. The semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C or higher. The temperature should be 500°C or lower, preferably 150°C to 450°C, and the oxygen content in the film-forming gas should be 30%. The film is formed at a volume of % or more, preferably 100% by volume.

[0316] Next, a heat treatment is performed to transform the first oxide semiconductor film into a highly crystalline first CAAC-OS film. The heat treatment temperature shall be 350°C to 740°C, preferably 450°C to 650°C. The temperature should be below ℃. Furthermore, the heat treatment time should be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. The temperature should be below a certain level. Furthermore, the heat treatment may be carried out in an inert or oxidizing atmosphere. Alternatively, the material is heated in an inert atmosphere, followed by heat treatment in an oxidizing atmosphere. Heat treatment in an air-filled environment allows for a rapid reduction in the impurity concentration of the first oxide semiconductor film. Yes, it is possible. On the other hand, heat treatment in an inert atmosphere generates oxygen vacancies in the first oxide semiconductor film. This can occur. In such cases, the oxygen deficiency is reduced by heat treatment in an oxidizing atmosphere. It is possible. Furthermore, the heat treatment can be performed at 1000 Pa or less, 100 Pa or less, or 10 Pa or less. This may be carried out under reduced pressure of 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film This can be reduced in an even shorter amount of time.

[0317] The first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm, so the thickness is 1 Compared to cases where the wavelength is 0 nm or greater, crystallization can be easily achieved by heat treatment.

[0318] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is made 10 nm or more in thickness. The first film is deposited to a thickness of 0 nm or less. The second oxide semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C to 500°C, preferably 150°C to 450°C. The temperature should be below ℃, and the oxygen content in the film-forming gas should be 30% by volume or more, preferably 100% by volume. To form a membrane.

[0319] Next, a heat treatment is performed to solid-phase grow a second oxide semiconductor film from the first CAAC-OS film. This process creates a second CAAC-OS film with high crystallinity. The heat treatment temperature is 350°C. The temperature should be between 740°C and 750°C, preferably between 450°C and 650°C. The interval shall be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. Furthermore, the heat treatment shall be as follows: The process can be carried out in an inert or oxidizing atmosphere. Preferably, the heat treatment is performed in an inert atmosphere. After this, heat treatment is performed in an oxidizing atmosphere. Heat treatment in an inert atmosphere produces a second acid The impurity concentration of the ionized semiconductor film can be reduced in a short time. On the other hand, in an inert atmosphere... Heat treatment can create oxygen vacancies in the second oxide semiconductor film. In that case, oxidation The oxygen deficiency can be reduced by heat treatment in a suitable atmosphere. Note that the heat treatment is 1 It can also be done under reduced pressure of 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced even more quickly. Cut.

[0320] In this manner, a CAAC-OS film with a total thickness of 10 nm or more is formed. It is possible.

[0321] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0322] (Embodiment 9) Various examples have been shown in other embodiments. However, one aspect of the present invention is this It is not limited to them.

[0323] For example, in this specification, transistors of various structures are used as transistors. This is possible. Therefore, there are no restrictions on the type of transistor used. An example of a transistor. Examples include transistors made of single-crystal silicon, or amorphous silicon, polycrystalline silicon Microcrystals (also called nanocrystals or semi-amorphous crystals) Transistors with non-single-crystal semiconductor films, such as those found in capacitors, can be used. Alternatively, thin-film transistors (TFTs) made by thinning these semiconductors can be used. Yes, it's possible. Using TFTs offers various advantages. For example, compared to single-crystal silicon... Because it can be manufactured at a lower temperature, it can reduce manufacturing costs or allow for the use of larger manufacturing equipment. Yes, it is possible. Because the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Therefore, many can be manufactured simultaneously. Because it is possible to manufacture a certain number of display devices, it can be manufactured at a low cost. Alternatively, because the manufacturing temperature is low Therefore, substrates with poor heat resistance can be used. ZISTA can be manufactured. Alternatively, a display element can be made using a transistor on a light-transmitting substrate. It is possible to control the transmission of light. Alternatively, because the film thickness of the transistor is thin, A portion of the film forming the star can transmit light. Therefore, the aperture ratio can be improved. It is possible.

[0324] Furthermore, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), Further improvement in crystallinity makes it possible to manufacture transistors with superior electrical properties. As a result, gate driver circuit (scan line drive circuit), source driver circuit (signal line drive circuit) ), and signal processing circuits (signal generation circuits, gamma correction circuits, DA conversion circuits, etc.) are mounted on the substrate. It can be formed as a single unit.

[0325] Furthermore, when manufacturing microcrystalline silicon, by using a catalyst (such as nickel), This further improves crystallinity, making it possible to manufacture transistors with superior electrical properties. In this case, crystallinity can be improved simply by applying heat treatment without laser irradiation. This is also possible. As a result, part of the source driver circuit (such as analog switches) and the game The driver circuit (scan line drive circuit) can be integrally formed on the substrate. If laser irradiation is not performed, the unevenness of silicon crystallinity can be suppressed. Therefore, it is possible to display images with improved image quality. However, catalysts (such as nickel) It is possible to manufacture polycrystalline silicon or microcrystalline silicon without using ( ).

[0326] Furthermore, improving the crystallinity of silicon to polycrystalline or microcrystalline forms can affect the entire panel. It is preferable to do so, but it is not limited to that. In only a portion of the panel, silicate The crystallinity of the material may be improved. Selectively improving crystallinity can be achieved by selecting the laser light. This is possible by selectively illuminating the area, for example, the peripheral circuit area, which is an area other than the pixel. Only in the region of gate driver circuit and source driver circuit, or source driver Even if you irradiate only a part of the circuit (for example, an analog switch) with laser light, Good. As a result, silicon crystallization is directed only to the areas where the circuit needs to operate at high speed. It can be improved. The pixel area does not require high-speed operation, so the crystallinity is improved. Even without this, the pixel circuit can operate without any problems. Because it requires fewer regions to improve crystallinity, the manufacturing process can also be shortened. This can improve throughput and reduce manufacturing costs. Or, as required Because it can be manufactured with a small number of manufacturing machines, manufacturing costs can be reduced.

[0327] For example, a transistor is a compound semiconductor (e.g., SiGe, GaAs, etc.). ), or oxide semiconductors (for example, ZnO, InGaZnO, IZO (indium zinc oxide) (Material), ITO (Indium Tin Oxide), SnO, TiO, AlZnSnO (AZTO), Transistors containing ITZO (In-Sn-Zn-O, etc.) can be used. Alternatively, these compound semiconductors, or thin films made by thinning these oxide semiconductors, can be used. Indicators and the like can be used. These allow the manufacturing temperature to be lowered, for example This makes it possible to manufacture transistors at room temperature. As a result, substrates with low heat resistance, for example... Transistors can be directly formed on plastic substrates or film substrates. Furthermore, these compound semiconductors or oxide semiconductors are used in the channel portion of transistors. Furthermore, these compound semiconductors can also be used for other purposes. For example, these compound semiconductors or Using oxide semiconductors as wiring, resistive elements, pixel electrodes, or light-transmitting electrodes, etc. This can be done. Since they can be deposited or formed simultaneously with the transistor, the cost It can be reduced.

[0328] As an example of a transistor, a transistor formed using an inkjet method or printing method is... Rangistas and the like can be used. These allow for manufacturing at room temperature, manufacturing at low vacuum levels, and It can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This makes it possible to easily change the layout of the transistors. Alternatively, since it is possible to manufacture without using resist, material costs are reduced, and the number of processes is also reduced. It can be reduced. Or, since it is possible to apply the film only to the necessary parts, after forming a film over the entire surface... This method is less wasteful and lower-cost than etching.

[0329] As an example of a transistor, there is a transistor that has organic semiconductors or carbon nanotubes. Transistors and the like can be used. With these, transients can be applied to a bendable substrate. It is possible to form transistors. Transistors containing organic semiconductors or carbon nanotubes. Devices using this technology can be made more resistant to impact.

[0330] Furthermore, transistors with various other structures can also be used. For example, transistors include MOS type transistors, junction type transistors, and bipod type transistors. A transistor such as a MOS-type transistor can be used. By using this, the size of the transistor can be reduced. Therefore, a large number of transistors It can be equipped with a transistor. Bipolar transistors are used as transistors. This allows for the flow of a large current. Therefore, it is possible to operate the circuit at high speed. Yes, it is possible. Furthermore, MOS transistors and bipolar transistors can be mixed on a single substrate. It may be formed in this way. This will enable low power consumption, miniaturization, and high-speed operation. Yes, it's possible.

[0331] For example, in this specification, an example of a transistor is one with two or more gate electrodes. A multi-gate transistor can be used. With a multi-gate structure, Because the channel regions are connected in series, the structure consists of multiple transistors connected in series. Therefore, the multi-gate structure reduces off-current and improves the transistor's breakdown voltage (reliability). This can improve performance. Alternatively, a multi-gate structure can be used when operating in the saturation region. Even if the voltage between the drain and source changes, the current between the drain and source remains constant. A voltage-current characteristic with no change and a flat slope can be obtained. By utilizing the voltage-current characteristics, an ideal current source circuit or a circuit with very high resistance can be created. Active loading can be realized. As a result, a differential circuit or current mirror circuit with good characteristics can be achieved. It can be used to create roads and other structures.

[0332] As an example of a transistor, there is a configuration in which gate electrodes are arranged above and below the channel. A transistor of this type can be applied. The gate electrodes are arranged above and below the channel. By doing so, the circuit configuration becomes one in which multiple transistors are connected in parallel. This increases the channel area, allowing for an increase in the current value. Alternatively, the channel By arranging gate electrodes above and below, a depletion layer is more likely to form. Therefore, it is possible to improve the S value.

[0333] For example, in a transistor, the gate electrode is located above the channel region. Structure, structure in which the gate electrode is located below the channel region, positive staggered structure, inverse staggered structure Structure, a structure in which the channel region is divided into multiple regions, a structure in which the channel regions are connected in parallel, or A transistor with a structure in which the channel regions are connected in series can be used. Alternatively, Transistors include planar type, fin type, and tri-gate type. Gate type, top gate type, bottom gate type, double gate type (gates above and below the channel) Various configurations are possible, such as (where the "T" is placed).

[0334] As an example of a transistor, the channel region (or part thereof) may contain source electrodes or A transistor with a structure in which the drain electrodes overlap can be used. Channel region ( By creating a structure in which the source electrode or drain electrode overlaps (or part thereof), This prevents unstable operation caused by the accumulation of charge in a portion of the Nell region.

[0335] As an example of a transistor, a structure with an LDD region can be applied. LDD region By providing this feature, the off-current is reduced, or the transistor's breakdown voltage is improved (reliability is improved). This can be achieved. Alternatively, by providing an LDD region, when operating in the saturation region, Even if the voltage between the drain and source changes, the drain current does not change much, and the slope is It is possible to obtain rat-like voltage and current characteristics.

[0336] For example, in this specification, it is possible to form transistors using various substrates. It will come. The type of circuit board is not limited to a specific one. One example of such a circuit board is a semi-circular one. Conductive substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, Plastic substrates, metal substrates, stainless steel substrates, stainless steel foil Substrates containing tungsten, tungsten substrates, substrates containing tungsten foil, flexible substrates, adhesive Examples include laminated films, paper containing fibrous materials, or base films. One example is a glass substrate. Examples include barium borosilicate glass, aluminoborosilicate glass, or soda-lime glass. Examples include glass. Flexible substrates, laminated films, and base films are examples of such materials. The following are examples: For example, polyethylene terephthalate (PET), polyethylene Plasti There are acrylics. Or, as an example, synthetic resins such as acrylic. Or, as an example, For example, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Yes, there are. Or, as an example, polyamide, polyimide, aramid, epoxy, inorganic vapor deposition. These include films and paper products. In particular, semiconductor substrates, single crystal substrates, or SOI substrates. By using this to manufacture transistors, variations in characteristics, size, or shape can be reduced. It is possible to manufacture transistors that are small, have high current capacity, and are small in size. When circuits are constructed using transistors, the power consumption of the circuit can be reduced, or the integration of the circuit can be increased. It is possible to measure this.

[0337] Furthermore, a transistor is formed using one substrate, and then the transistor is transferred to another substrate. Alternatively, the transistor may be placed on a different substrate. An example of a substrate on which the transistor is relocated. In addition to the substrates on which the aforementioned transistors can be formed, paper substrates, cellophane Substrates, aramid film substrates, polyimide film substrates, stone substrates, wood substrates, cloth substrates (Natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or (This includes regenerated fibers (acetate, cupro, rayon, recycled polyester, etc.), leather) These include substrates, or rubber substrates. By using these substrates, good transient characteristics can be achieved. Formation of transistors, formation of low-power transistors, manufacturing of durable devices, heat-resistant coatings It is possible to reduce the weight or thickness of the device.

[0338] Furthermore, all the circuits necessary to realize the specified function are placed on the same circuit board (for example, glass It can be formed on substrates such as stainless steel substrates, plastic substrates, single crystal substrates, or SOI substrates. Yes. In this way, costs are reduced by reducing the number of parts, or the number of connection points with circuit components is reduced. This can improve reliability.

[0339] Furthermore, it is not necessary to form all the circuits required to achieve a given function on the same circuit board. It is possible. In other words, some of the circuits necessary to realize a predetermined function are formed on a certain substrate. Furthermore, another part of the circuit necessary to achieve the predetermined function is formed on a separate substrate. It is possible to do so. For example, a part of the circuit necessary to realize a certain function is made of glass. Another part of the circuitry formed on the substrate and necessary to realize a predetermined function is a single crystal substrate. It can be formed on (or SOI substrate). And to realize a predetermined function A single crystal substrate (also called an IC chip) on which another part of the necessary circuitry is formed is called COG ( The IC is connected to a glass substrate via a Chip-On-Glass (Chip On Glass) and the IC is placed on the glass substrate. It is possible to place the chip. Alternatively, the IC chip can be placed using TAB (Tape Auto). omated Bonding), COF(Chip On Film), SMT(Su Using glass (rface Mount Technology), or printed circuit boards, etc. It is possible to connect to the substrate. In this way, a part of the circuit is formed on the same substrate as the pixel section. As a result, costs are reduced by reducing the number of components, or the number of connections to circuit components. Reliability can be improved by reducing this. In particular, circuits with high drive voltages, Circuits with high drive frequencies often consume a lot of power. So, this kind of circuit is formed on a separate substrate (for example, a single-crystal substrate) from the pixel section, and the IC chip... This IC chip forms the component. By using this IC chip, it is possible to prevent an increase in power consumption. ru.

[0340] Furthermore, any content not specified in the drawings or text within the specification will be excluded. An invention can be constructed that defines the following: or, for a certain value, an upper limit and a lower limit. If a numerical range is specified, such as indicated by the following, you can narrow that range arbitrarily, or By excluding one point within that scope, the invention can be defined as a part of that scope. These measures, for example, define that prior art does not fall within the technical scope of the present invention. It is possible.

[0341] As a concrete example, consider a circuit diagram that uses the first to fifth transistors in a certain circuit. Let's assume it's described. In that case, the circuit does not have a sixth transistor. It is possible to define this as an invention. Or, the circuit does not have a capacitive element. It is possible to define that the circuit has a certain connection structure. The invention can be defined as not having a sixth transistor. The circuit is defined as not having a capacitive element with a certain connection structure. A light can be formed. For example, the gate is connected to the gate of a third transistor. It is possible to define the invention as not having a sixth transistor. Or, For example, a capacitive element having a first electrode connected to the gate of a third transistor. It is possible to define an invention as "not having one."

[0342] Another concrete example is, for a certain value, for example, "a certain voltage is between 3V and 10V." It is stated that "it is preferable to do so." In that case, for example, if a certain voltage is -2V It is possible to define the invention as "except in the case where the voltage is greater than or equal to 1V or less." Or, for example, It is possible to define the invention as "except when a certain voltage is 13V or higher." For example, the invention can also be defined as having a voltage of 5V or more and 8V or less. For example, the invention can also be defined as having a voltage of approximately 9V. The invention is defined as having a voltage that is between 3V and 10V, except when it is 9V. It is also possible.

[0343] Another concrete example would be, for a certain value, "It is preferable that a certain voltage be 10V." Let's assume it is stated that "it is." In that case, for example, a certain voltage is -2V or more and 1V or less. It is possible to define the invention as except in the case of, or, for example, if a certain voltage is It is possible to define the invention as "except in cases where the voltage is 13V or higher."

[0344] Another concrete example is describing the properties of a certain substance, for example, "a certain film is an insulating film." Assume it is described. In that case, except, for example, when the insulating film is an organic insulating film. , and the invention can be defined as such. Or, for example, if the insulating film is an inorganic insulating film It is possible to define the invention as "except in the case of..."

[0345] Another concrete example is a layered structure, for instance, "a film is provided between A and B." Let's assume it is stated that "it is made of four or more layers". In that case, for example, the film is a laminated film of four or more layers. It is possible to define the invention as except in the case of A and its film. The invention can be defined as "except in cases where a conductive film is provided between them."

[0346] Furthermore, the inventions described herein can be implemented by various people. However, its implementation may involve multiple people. For example, In the case of a receiving system, Company A manufactures and sells the transmitter, and Company B manufactures the receiver. They may be sold. Another example is in the case of light-emitting devices having TFTs and light-emitting elements. In this agreement, the semiconductor device on which the TFT is formed will be manufactured and sold by Company A. The company purchased the semiconductor device, deposited a light-emitting element onto it, and used it as a light-emitting device. There are times when it means completing something.

[0347] In such a case, the invention would allow for a patent infringement claim against either Company A or Company B. This constitutes one aspect of the patent infringement. Therefore, a claim of patent infringement can be made against Company A or Company B. One aspect of the invention that can be made is clear and is deemed to be described in this specification, etc. Yes, it is possible. For example, in the case of a transmission and reception system, the transmitter alone constitutes one aspect of the invention. It is possible to constitute one aspect of the invention with only a receiver, and such aspects of the invention are It is clear and can be determined to be described herein, etc. Another example is, In the case of a light-emitting device having a TFT and a light-emitting element, the semiconductor device on which the TFT is formed One aspect of the invention can be constituted by only a light-emitting device having a TFT and a light-emitting element. This can constitute one aspect of the invention, and such aspects of the invention are clearly defined in this specification. It can be concluded that this is stated in the relevant documents.

[0348] In this specification, active elements (transistors, diodes, etc.), passive elements ( For all terminals of capacitive elements, resistive elements, etc., the destination of their connection is not specified. However, a person skilled in the art may be able to constitute one aspect of the invention. In other words, connection Even without specifying the destination, one aspect of the invention can be said to be clear. And the connection destination is specified. If the content is described in this specification, etc., then one aspect of the invention that does not specify the connection destination is described in this specification. In some cases, it can be determined that this is described in the documentation. In particular, if the terminal has multiple connection destinations. In cases where a connection to that terminal is possible, it is not necessary to limit the connection destination to a specific location. Therefore, active elements (transistors, diodes, etc.), passive elements (capacitors, resistors, etc.) By specifying the connection destination for only some of the terminals that the invention has, It may be possible to constitute one aspect.

[0349] Furthermore, in this specification, etc., if a certain circuit is specified, then at least the connection destination is identified, and this applies to our business. If you are an expert, you may be able to identify the invention. Or, regarding a certain circuit, However, if the function is specified, a person skilled in the art may be able to specify the invention. In other words, if the function is specified, it can be said that one aspect of the invention is clear. It may be possible to determine that one aspect of the invention is described in this specification, etc. Therefore, even without specifying the function of a certain circuit, if the connection destination is specified, it constitutes an invention. It is disclosed as such and can constitute one aspect of the invention. Regarding a certain circuit, even if the connection destination is not specified, if the function is specified, it can be considered as one aspect of the invention. This has been disclosed and can constitute one aspect of the invention.

[0350] In the present specification and the like, in the figures or text described in a certain embodiment, it is possible to extract a part thereof to form an aspect of the invention. Therefore, when a figure or text describing a certain part is described, the content obtained by extracting a part of the figure or text thereof is also disclosed as an aspect of the invention and can form an aspect of the invention. Therefore, for example, active elements (such as transistors and diodes), wiring, passive elements (such as capacitive elements and resistive elements), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components, devices, operation methods, manufacturing methods, etc. are described singly or plurally in drawings or text, and it is possible to extract a part thereof to form an aspect of the invention. For example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors and capacitive elements), it is possible to extract M (M is an integer and M < N) circuit elements (such as transistors and capacitive elements) to form an aspect of the invention. As another example, from a cross-sectional view composed of N (N is an integer) layers, it is possible to extract M (M is an integer and M < N) layers to form an aspect of the invention. As yet another example, from a flowchart composed of N ( N is an integer) elements, it is possible to extract M (M is an integer and M < N) elements to form an aspect of the invention. In the present specification and the like, in the figures or text described in a certain embodiment,

[0351] when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of the specific example. Therefore, in a certain embodiment, when described, it is easily understood by those skilled in the art to derive the upper concept of the specific example. Therefore, in a certain embodiment, If at least one specific example is described in a diagram or text, the higher-level example of that specific example is... This is also disclosed as one aspect of the invention and may constitute one aspect of the invention. It is Noh.

[0352] Furthermore, in this specification, etc., at least the contents shown in the figures (or even just a part of the figures) It is disclosed as one aspect of the invention, and it is possible to constitute one aspect of the invention. Yes. Therefore, if a certain content is described in a diagram, it does not need to be stated in text. Even if it is not disclosed, its content is disclosed as one aspect of the invention, and does not constitute one aspect of the invention. It is possible to do so. Similarly, a diagram showing only a part of the figure can also be considered as one aspect of the invention. This is disclosed and can constitute one aspect of the invention.

[0353] Note that in the diagram, the size, layer thickness, or area may be exaggerated for clarity. There is a compatibility issue. Therefore, it is not necessarily limited to that scale.

[0354] In this specification, for example, the shape of an object is referred to as "diameter," "particle size," "size," "size," When specifying by "width," etc., it refers to the length of one side of the smallest cube in which the object can be contained, or the object itself. This can also be interpreted as the equivalent diameter of a circle in one cross-section of an object. The equivalent diameter of a circle in one cross-section of an object is the diameter of a circle in one cross-section of an object. This refers to the diameter of a perfect circle whose area is equal to that of one cross-section of a body.

[0355] Furthermore, even when the term "semiconductor" is used, if, for example, its conductivity is sufficiently low, it can be referred to as an "insulator." They may have the following characteristics. Also, the boundary between "semiconductors" and "insulators" is ambiguous, and strictly speaking... In some cases, it may be impossible to distinguish between them. Therefore, the term "semiconductor" as used in this specification is used interchangeably with "insulator". In some cases, it can be rephrased. Similarly, the term "insulator" as used herein may be interpreted as "semiconductor." In some cases, this can be rephrased as "...".

[0356] Furthermore, even when the term "semiconductor" is used, if, for example, its conductivity is sufficiently high, it can be referred to as a "conductor." They may have certain characteristics. Also, the boundary between "semiconductors" and "conductors" is ambiguous, and strictly speaking... In some cases, it may be impossible to distinguish between them. Therefore, the term "semiconductor" as used in this specification is used interchangeably with "conductor". In some cases, it can be rephrased. Similarly, the term "conductor" as used herein means "semiconductor." In some cases, this can be rephrased as "...".

[0357] Furthermore, impurities in a semiconductor film refer to components other than the main components that make up the semiconductor film. For example, Elements with a concentration of less than 0.1 atomic percent are considered impurities. The presence of impurities means that For example, carrier traps may form in the semiconductor film, or carrier mobility may decrease. For example, a decrease in crystallinity may occur. In this case, impurities that change the properties of the semiconductor film include, for example, Group 1 elements, Group 2 elements, These include Group 14 elements, Group 15 elements, and transition metals other than the main components, and in particular, for example, hydrogen ( Lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. (also found in water) Yes, in the case of oxide semiconductors, oxygen vacancies can form due to the inclusion of impurities. When the semiconductor film is a silicon film, impurities that change the properties of the semiconductor film include, for example, These include the elements of Group 1 (excluding oxygen and hydrogen), Group 2, Group 13, and Group 15. .

[0358] Furthermore, in this specification, excess oxygen refers to, for example, oxygen present in a quantity exceeding the stoichiometric composition. This refers to excess oxygen. Alternatively, excess oxygen refers to oxygen released, for example, by heating. For example, elements can move within a membrane or layer. The movement of excess oxygen is due to the atoms of the membrane or layer. This can involve movement between two parts of the molecule, or a chain reaction movement where the molecules replace the oxygen that makes up the membrane or layer. There are also insulating films containing excess oxygen, which can release oxygen through processes such as heat treatment. It is an insulating film that has the ability to do so.

[0359] Furthermore, in this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. This refers to the state in which something is positioned. Therefore, it also includes cases where the angle is between -5° and 5°. Also, "Perpendicular" refers to a state where two lines are positioned at an angle between 80° and 100°. Therefore, this also includes cases where the angle is between 85° and 95°.

[0360] In the embodiment, the conductive film may be, for example, aluminum, titanium, chromium, or cobalt. Nickel, copper, yttrium, zirconium, molybdenum, ruthenium, silver, tantalum A conductive film containing tungsten or tulse may be used as a single layer or in a multilayer configuration. Examples of conductive films with transient properties include In-Zn-W oxide films, In-Sn oxide films, Oxide films such as In-Zn oxide films, indium oxide films, zinc oxide films, and tin oxide films It is fine to use it. Also, the aforementioned oxide film can be used even if trace amounts of Al, Ga, Sb, F, etc. are added. Good. Also, a thin metal film that transmits light (preferably between 5 nm and 30 nm) It is also possible to use an Ag film, Mg film, or Ag-Mg compound having a thickness of 5 nm. A gold film may be used. Alternatively, a film that efficiently reflects visible light could be, for example, lithium , including aluminum, titanium, magnesium, lanthanum, silver, silicon, or nickel A membrane can be used.

[0361] In addition, examples of insulating films include aluminum oxide, magnesium oxide, silicon oxide, Silicon oxide nitride, silicon nitride, silicon nitride, gallium oxide, germanium oxide Yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide Alternatively, an insulating film containing tantalum oxide may be used in a single layer or in a multilayer configuration. Resin films such as imide resin, acrylic resin, epoxy resin, and silicone resin may also be used. do not have.

[0362] Furthermore, in this specification, if a crystal is trigonal or rhombohedral, it will be represented as a hexagonal crystal system. .

[0363] Furthermore, the terms "first," "second," "third," etc. used in this specification are used to avoid confusion of constituent elements. This is a selection and not a numerical limit. Therefore, for example, "the first" This can be explained by substituting "the second" or "the third" as appropriate.

[0364] In this specification, when an etching process is performed after a photolithography process: The mask formed during the photolithography process shall be removed.

[0365] Furthermore, the transistor has a second gate for applying a potential to the back channel. In some cases, a gate may be provided. In that case, to distinguish between the two gates, we will refer to the gate and the normal call gate. We'll call the terminal that's exposed the "front gate," and the other one the "back gate."

[0366] Furthermore, voltage refers to the potential difference between two points, while electric potential refers to the electrostatic field at a given point. This refers to the electrostatic energy (electrical potential energy) possessed by a unit charge within a given object. Furthermore, generally speaking, the potential difference between the potential at a certain point and a reference potential (for example, the ground potential) This is simply called electric potential or voltage, and the terms electric potential and voltage are often used as synonyms. Therefore, unless otherwise specified in this specification, potential may be read as voltage. You may substitute "voltage" with "potential."

[0367] Furthermore, in this specification, voltage refers to a certain potential and a reference potential (e.g., ground potential). It often refers to the potential difference. Therefore, voltage, potential, and potential difference are expressed as potential, voltage, This can be rephrased as voltage difference. Note that voltage refers to the potential difference between two points. Electric potential is the electrostatic energy (electrical energy) possessed by a unit charge in an electrostatic field at a given point. This refers to potential energy.

[0368] Generally speaking, electric potential and voltage are relative. Therefore, ground potential is... It is not necessarily limited to 0 volts.

[0369] A transistor is a type of semiconductor device that amplifies current and voltage, and controls conductivity or non-conductivity. It is possible to realize controlled switching operations, etc. Transistors in this specification are , IGFET(Insulated Gate Field Effect Trans istors and thin-film transistors (TFTs) ) includes.

[0370] For example, in this specification, a transistor has a gate, a drain, and a source. It is an element having at least three terminals, including the drain (drain terminal, drain (In-field or drain electrode) and source (source terminal, source area or source electrode) It has a channel region in between, and current flows through the drain, the channel region and the source. It is possible to do this. Here, source and drain refer to the structure or operation of the transistor. Because it varies depending on the conditions, it is difficult to determine which is the source and which is the drain. It is difficult. Therefore, the part that functions as a source and the part that functions as a drain are Sometimes they are not called source or drain. In that case, for example, the source and drain One side is referred to as the first terminal, first electrode, or first region, and the other side of the source and drain is referred to as the first It may be referred to as a 2-terminal, second electrode, or second region.

[0371] For example, in this specification, it is explicitly stated that X and Y are connected. In this case, X and Y are electrically connected, and X and Y are functionally connected. The cases in which X and Y are directly connected are disclosed in this specification, etc. Here, X and Y are the object (for example, a device, element, circuit, wiring, electrode, terminal, conductive film). Assume that it is a layer, etc. Therefore, a predetermined connection relationship, for example, shown in a diagram or text. This is not limited to the connections shown in the diagram or text, but also includes connections other than those shown in the diagram or text. It shall be as stated in the chapter.

[0372] One example of a case where X and Y are directly connected is when an electrical connection between X and Y is possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. If the diode, display element, light-emitting element, load, etc. are not connected between X and Y and elements that enable electrical connection between X and Y (e.g., switches, transistors, capacitors). Without the need for elements such as components, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc. This is the case when X and Y are connected.

[0373] One example of a case where X and Y are electrically connected is when the electrical connection between X and Y is possible. Elements that perform this function (for example, switches, transistors, capacitive elements, inductors, resistive elements, etc.) One or more elements (such as ions, display elements, light-emitting elements, and loads) are connected between X and Y. This is possible. Furthermore, the switch has a function that allows it to be controlled to be on or off. In other words, A switch can be either conductive (on) or non-conductive (off), allowing current to flow. It has a function to control whether or not current flows. Alternatively, the switch selects the path through which the current flows. It has a function to switch between them. Note that if X and Y are electrically connected, X This includes cases where and Y are directly connected.

[0374] One example of a functional connection between X and Y is enabling a functional connection between X and Y. Circuits that perform this function (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signal transformers) Conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (electric (Source circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc.) Voltage source, current source, switching circuit, amplification circuit (which can increase signal amplitude or current amount, etc.) Circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc., signal generation One or more circuits (such as memory circuits and control circuits) can be connected between X and Y. For example, even if another circuit is placed between X and Y, the signal output from X If the signal is transmitted to Y, then X and Y are assumed to be functionally connected. When X and Y are functionally connected, the situation is different from when X and Y are directly connected. This includes cases where and are electrically connected.

[0375] Furthermore, if it is explicitly stated that X and Y are electrically connected, then X and Y When X and Y are electrically connected (that is, when there is another element or circuit between X and Y) (when connected by) and when X and Y are functionally connected (i.e., X and Y and (When they are functionally connected with another circuit in between) and when X and Y are directly connected In the case where (that is, when X and Y are connected without another element or circuit in between) This shall be disclosed in this specification, etc. That is, it shall be clearly stated that they are electrically connected. When described symbolically, it is equivalent to simply stating that it is connected. Such information is disclosed in this specification, etc.

[0376] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or via (In short), electrically connected to X, the drain (or second terminal, etc.) of the transistor is connected to Z. If Y is electrically connected via (or without) 2, or if the transistor source (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. They are directly connected, with the transistor's drain (or second terminal, etc.) directly connected to a portion of Z2. If it is connected to and another part of Z2 is directly connected to Y, it can be expressed as follows: It is possible to do so.

[0377] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal) of the transistor." The terminals (such as the X terminal) are electrically connected to each other, and X is the source (or the X terminal) of the transistor. The electrical connections are in the following order: terminal 1, the drain of the transistor (or terminal 2, etc.), and Y. It can be expressed as "It is connected." Or, "The source (or the source) of the transistor." Terminal 1 (or terminal 2) is electrically connected to X, and the drain (or terminal 2) of the transistor is connected to X. (d) is electrically connected to Y, X is the source of the transistor (or the first terminal, etc.), and the transistor The drain (or second terminal, etc.) of the converter, Y, is electrically connected in this order. It can be expressed as "X is the source (or first terminal) of the transistor." Alternatively, "X is the source (or first terminal) of the transistor." Y is electrically connected to X via the drain (or second terminal, etc.) and X, the transistor The source of the transistor (or the first terminal, etc.), the drain of the transistor (or the second terminal, etc.) ), Y is provided in this connection order. By using a specific method of expression to define the order of connections in the circuit configuration, Distinguish between the source (or first terminal, etc.) and drain (or second terminal, etc.) of the zista. This allows us to determine the technical scope.

[0378] Alternatively, another way to express it is, for example, "the source (or first terminal, etc.) of the transistor." It is electrically connected to X via at least a first connection path, and the first connection path is It does not have a second connection path, and the aforementioned second connection path is via a transistor, The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor. The path between ( and ), and the first connection path is a path via Z1, and the transit The drain (or second terminal, etc.) of the terminal is electrically connected to Y via at least a third connection path. They are connected in a manner, and the third connection path does not have the second connection path, and the third The connection path is the path via Z2. This can be expressed as "The transition The source of the starter (or the first terminal, etc.) is connected via Z1 through at least the first connection path. And, electrically connected to X, the first connection path does not have a second connection path, The second connection path has a connection path via a transistor, and the drain of the transistor (or a second terminal, etc.) is connected to Y via Z2 by at least a third connection path. It is expressed as: "They are electrically connected, and the third connection path does not have the second connection path." It is possible. Or, "the source (or first terminal, etc.) of the transistor is less Both are electrically connected to X via Z1 through a first electrical path, and the first electrical The target path does not have a second electrical path, and the second electrical path is the transistor From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor It is an electrical path, and the drain (or second terminal, etc.) of the transistor is at least third The electrical path is electrically connected to Y via Z2, and the third electrical path is , it does not have a fourth electrical path, and the fourth electrical path is the drain of the transistor The electrical pulse from (or the second terminal, etc.) to the source (or the first terminal, etc.) of the transistor It can be expressed as "It is S." Using similar methods of expression as these examples, the circuit configuration By defining the connection path in the transistor, the source (or first terminal) To distinguish between the drain (or second terminal, etc.) and the second terminal, and to determine the technical scope. It is possible.

[0379] Note that these methods of expression are just examples and are not limited to these methods. Here, X Y, Z1, and Z2 are the objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, etc.) Let's assume it is a layer, etc.

[0380] Note that, in circuit diagrams, independent components are shown as being electrically connected to each other. Even in such cases, one component may possess the functions of multiple components. For example, if part of the wiring also functions as an electrode, one conductive film will perform the function of the wiring, and It possesses the functions of both components of the electrode's function. Therefore, the electrode in this specification A conductive connection is a situation where a single conductive film combines the functions of multiple components. Combined forms are also included in that category.

[0381] For example, in this specification, Y is formed on X, or Y is formed on X. When explicitly stating that something is done, it means that Y is directly in contact with X. This is not limited to cases where there is no direct contact, that is, when another object is interposed between X and Y. This also includes the case where X and Y are the object (e.g., device, element, circuit, wiring, (Let's assume it is an electrode, terminal, conductive film, layer, etc.)

[0382] Therefore, for example, explicitly stating that layer Y is formed on (or on layer X) layer X If described, this applies to cases where layer Y is formed in direct contact with layer X, and where layer X is formed on top of layer X. Another layer (e.g., layer Z) is formed in direct contact with it, and layer Y is formed on top of it in direct contact. This includes cases where this has been done. Note that another layer (e.g., layer Z) may be a single layer. And, multi-layered (laminated) construction is also acceptable.

[0383] Furthermore, the same applies when it is explicitly stated that Y is formed above X. It is not limited to Y being directly in contact with X, but rather there may be another object between X and Y. This includes cases where an intervening layer exists. Therefore, for example, if layer Y is formed above layer X, In this case, there are two possibilities: when layer Y is formed in direct contact with layer X, and when layer Y is formed in direct contact with layer X. Then another layer (for example, layer Z) is formed, and layer Y is formed directly in contact with it. This includes cases where... Furthermore, another layer (e.g., layer Z) may be a single layer or a multi-layered layer. (Laminated) is also acceptable.

[0384] Furthermore, Y is formed on top of X, Y is formed on top of X, or Y is formed above X. When explicitly stating that something has been achieved, this includes cases where Y is formed diagonally above X. do.

[0385] The same applies when Y is below X, or when Y is below X.

[0386] For example, in this specification, etc., "upwards", "upwards", "downwards", "sideways" "To the right," "to the left," "diagonally," "towards the back," "towards the front," "inside," "outside," or Words indicating spatial arrangement, such as "inside," refer to the relationship between one element or feature and another element or feature. It is often used to simply illustrate sequences using diagrams. However, it is not limited to this. These terms describing spatial arrangements can include directions other than those depicted in the diagram. Yes. For example, if it is explicitly stated as "Y on X," it is not limited to Y being on X. It's not possible. The device in the diagram can be inverted or rotated 180°, so Y is below X. It is possible to include a certain thing. In this way, the phrase "upwards" refers to the direction "upwards". In addition, it is possible to include the direction "downward". However, it is not limited to this, and the diagram shows Since the vise can rotate in various directions, the phrase "upwards" means "upwards" and "ascending". In addition to the direction "downward," other directions include "sideways," "right," "left," "diagonally," "backward," and "hand." It can also include other directions such as "forward," "inward," "outward," or "inside." Therefore, it is possible to interpret it appropriately depending on the situation.

[0387] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes. [Explanation of Symbols]

[0388] 10 Electronic gun chamber 12 Optical system 14 Sample Room 16 Optical system 18 Cameras 20 Observation Room 22 Film Room 32 Fluorescent board 101 cabinets 110 Display Panel 111 Display area 112 Display area 113 Display area 114 Display area 115 Display area 116 Display area 121 icons 125 Slide Bar 126 fingers 150 Electronic equipment 153a Support Panel 155a Support Panel 155b Support Panel 201 areas 202 Image sensor 203 Illumination elements 204 Illumination Images 205 Subject 206 images 207 images 208 icons 209 icons 300 Touch Panels 301 Display section 302 pixels 302B subpixels 302G sub-pixels 302R sub-pixel 302t transistor 303c capacity 303g(1) Scan line drive circuit 303g(2) Image Pixel Driving Circuit 303s(1) Image signal line driving circuit 303s(2) Imaging signal line drive circuit 303t transistor 308 image pixels 308p Photoelectric element 308t transistor 309 FPC 310 circuit board 310a Barrier film 310b board 310c adhesive layer 311 Wiring 319 terminals 321 Insulating film 328 Bulkhead 329 Spacer 350R light-emitting element 351R lower electrode 352 Upper electrode 353 layers 353a Light-emitting unit 353b Light-emitting unit 354 Middle Class 360 sealing material 367BM light shielding layer 367p anti-reflection layer 367R colored layer 370 Opposing substrate 370a Barrier film 370b board 370c adhesive layer 380B Light-Emitting Module 380G Light-Emitting Module 380R Light-Emitting Module 401 Battery 402 Receiving means 403 Communication equipment 404 Speakers 405 Speakers 500 Touch Panels 500B Touch Panel 501 Display section 502R sub-pixel 502t transistor 503c capacity 503g(1) Scan line drive circuit 503t transistor 509 FPC 510 circuit board 510a Barrier film 510b circuit board 510c adhesive layer 511 Wiring 519 terminals 521 Insulating film 528 Bulkhead 550R luminescent element 560 Sealing material 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 circuit boards 570a Barrier film 570b circuit board 570c ​​adhesive layer 580R Light-Emitting Module 590 circuit boards 591 Electrode 592 Electrode 593 Insulating layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connectivity Layer

Claims

1. An electronic device that can be folded in half, A first display area and a first image sensor are provided on the front surface, A second display area and a second image sensor are provided on the back side, A first display panel having the first display area, A second display panel having the second display area, A first support having an overlap with a first portion of the non-display area surrounding the first display area, A second support is provided separately from the first support and overlaps with the second portion of the non-display area, A third support having a region located between the first support and the second support, and overlapping with the third portion of the non-display region, The third support is less flexible than the first display panel. The first support and the second support are less flexible than the third support. The first display area is larger than the second display area. The first display panel is folded so that the first display area is hidden inside. The first display panel has a first region that curves when folded, The portion of the first display area and the third portion are electronic devices located in the first area.

2. An electronic device that can be folded in half, A first display area and a first image sensor are provided on the front surface, A second display area and a second image sensor are provided on the back side, A first display panel having the first display area, A second display panel having the second display area, A first support having an overlap with a first portion of the non-display area surrounding the first display area, A second support is provided separately from the first support and overlaps with the second portion of the non-display area, A third support having a region located between the first support and the second support, and overlapping with the third portion of the non-display region, The first display panel has a light-emitting element and a first transistor connected to the light-emitting element in the first display area. The first display panel has a drive circuit including a second transistor in the non-display area. The third support is less flexible than the first display panel. The first support and the second support are less flexible than the third support. The first display area is larger than the second display area. The first display panel is folded so that the first display area is hidden inside. The first display panel has a first region that curves when folded, A portion of the first display area and the third portion are located in the first area. A part of the drive circuit is an electronic device located in the third part.

3. An electronic device that can be folded in half, A first display area and a first image sensor are provided on the front surface, A second display area and a second image sensor are provided on the back side, A first display panel having the first display area, A second display panel having the second display area, A first support having an overlap with a first portion of the non-display area surrounding the first display area, A second support is provided separately from the first support and overlaps with the second portion of the non-display area, A third support having a region located between the first support and the second support, and overlapping with the third portion of the non-display region, The first display panel has a light-emitting element and a first transistor connected to the light-emitting element in the first display area. The first display panel has a drive circuit including a second transistor in the non-display area. The first to third supports have light-shielding properties, The third support is less flexible than the first display panel. The first support and the second support are less flexible than the third support. The first display area is larger than the second display area. The first display panel is folded so that the first display area is hidden inside. The first display panel has a first region that curves when folded, A portion of the first display area and the third portion are located in the first area. A part of the drive circuit is an electronic device located in the third part.

Images