Capacitor component and method for manufacturing a capacitor component

Abstract

To provide a capacitor component capable of improving the connectivity and uniformity of internal electrode layers and reducing the thickness of the internal electrode layers.SOLUTION: A capacitor component according to an embodiment of the present invention includes a body including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer, and at least one hole is formed in the internal electrode layer, and the hole has a region containing one or more elements selected from the group consisting of indium (In) and tin (Sn).SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] This invention relates to a capacitor component and a method for manufacturing a capacitor component. [Background technology]

[0002] Multilayer ceramic capacitors (MLCCs), a type of capacitor component, are important chip components used in industries such as communications, computers, home appliances, and automobiles due to their advantages of being small, yet guaranteeing high capacitance, and being easy to mount. In particular, they are core passive elements used in various electrical, electronic, and information communication devices such as mobile phones, computers, and digital TVs.

[0003] Generally, MLCCs are manufactured by screen printing a conductive paste for forming the internal electrode layer onto a dielectric green sheet, stacking multiple dielectric green sheets with the conductive paste printed on them, and then sintering them. The conductive paste is generally made by mixing conductive powder such as nickel (Ni), ceramic powder, a binder, and a solvent. The conductive powder used in the conductive paste may solidify or be over-sintered during the sintering process, which can reduce the connectivity of the internal electrode layer and result in uneven thickness. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Korean Published Patent No. 10-2011-0047481 [Overview of the project] [Problems that the invention aims to solve]

[0005] One of the objectives of this invention is to provide a capacitor component that can improve the connectivity of the internal electrode layer.

[0006] Another objective of this invention is to provide a capacitor component that can improve the uniformity of the internal electrode layer.

[0007] Another objective of this invention, as an example, is to provide a capacitor component that can reduce the thickness of its internal electrode layer. [Means for solving the problem]

[0008] According to one aspect of the present invention, a capacitor component is provided, comprising a body including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer, wherein the internal electrode layer has at least one hole formed therein, and the hole contains a region containing one or more elements selected from the group consisting of indium (In) and tin (Sn).

[0009] According to another aspect of the present invention, a capacitor component is provided, comprising a body including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer, wherein the internal electrode layer has a plurality of holes formed therethrough, and at least some of the plurality of holes have regions containing conductive materials different from those in the internal electrode layer.

[0010] According to another aspect of the present invention, a method for manufacturing a capacitor component is provided, comprising the steps of: forming a dielectric green sheet; forming a conductive thin film containing first and second conductors on the dielectric green sheet by vapor deposition; and sintering the conductive thin film to form an internal electrode layer, wherein the internal electrode layer contains the first conductor, and a region containing the second conductor is formed in the internal electrode layer. [Effects of the Invention]

[0011] A capacitor component according to one aspect of the present invention can improve the connectivity of the internal electrode layers.

[0012] The capacitor component according to another aspect of the present invention can improve the uniformity of the internal electrode layer.

[0013] The capacitor component according to another aspect of the present invention can reduce the thickness of the internal electrode layer.

Brief Description of the Drawings

[0014] [Figure 1] The drawing schematically shows a perspective view of the capacitor component according to an embodiment of the present invention. [Figure 2] The drawing schematically shows a cross-sectional view taken along the line I-I' of FIG. 1. [Figure 3] The drawing is an enlarged view of A in FIG. 2. [Figure 4] The drawing schematically shows a part of the internal electrode layer along the line II-II' of FIG. 2. [Figure 5] The drawing schematically shows any one of the internal electrode layers. [Figure 6] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 7] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 8] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 9] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 10] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 11] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 12] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention. [Figure 13] The drawing shows in order the manufacturing method of the capacitor component according to an embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0015] The terms used in this application are used solely to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless they clearly mean something different in context. In this application, terms such as “includes” or “having” are intended to specify the existence of features, figures, stages, operations, components, parts or combinations thereof described in the specification, and should be understood not to preemptively exclude the existence or possibility of adding one or more other features, figures, stages, operations, components, parts or combinations thereof. Throughout the specification, “above” means located above or below the part in question, and does not necessarily mean located on the upper side relative to the direction of gravity.

[0016] Furthermore, the term "connection" is used to encompass not only cases where components are in direct physical contact with each other, but also cases where other components are in contact with each other through intermediaries.

[0017] The dimensions and thicknesses of each component shown in the drawings are arbitrary for illustrative purposes, and therefore the present invention is not necessarily limited to those shown.

[0018] In drawings, the first direction can be defined as the Z direction or thickness direction, the second direction as the X direction or length direction, and the third direction as the Y direction or width direction.

[0019] Hereinafter, a capacitor component and a method for manufacturing the capacitor component according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, identical or corresponding components will be assigned the same drawing number, and redundant explanations therefor will be omitted.

[0020] Capacitor components Figure 1 is a schematic perspective view of a capacitor component according to one embodiment of the present invention; Figure 2 is a schematic cross-sectional view along the line I-I' in Figure 1; Figure 3 is an enlarged view of A in Figure 2; Figure 4 is a schematic view of a part of the internal electrode layer along the line II-II' in Figure 2; and Figure 5 is a schematic view of one of the internal electrode layers.

[0021] Referring to Figures 1 to 5, the capacitor component 1000 according to one embodiment of the present invention includes a main body 100 and external electrodes 210 and 220.

[0022] The main body 100 forms the external appearance of the capacitor component 1000 according to this embodiment. There are no particular restrictions on the specific shape of the main body 100, but as shown in the figure, the main body 100 can be hexahedral or a similar shape. Due to the shrinkage of the ceramic powder contained in the main body 100 during the sintering process, the main body 100 may not be a perfectly straight hexahedron, but may be substantially hexahedral.

[0023] Based on Figures 1, 2, and 4, the main body 100 includes a first surface 101 and a second surface 102 facing each other in the thickness direction Z, a third surface 103 and a fourth surface 104 facing each other in the length direction X, and a fifth surface 105 and a sixth surface 106 facing each other in the width direction Y. Each of the third to sixth surfaces 103, 104, 105, and 106 of the main body 100 corresponds to a wall surface of the main body 100 that connects the first surface 101 and the second surface 102 of the main body 100. Hereafter, both end faces (one end face and the other end face) of the main body 100 can mean the third surface 103 and the fourth surface 104 of the main body, and both sides (one side and the other side) of the main body 100 can mean the fifth surface 105 and the sixth surface 106 of the main body. Also, one surface and the other surface of the main body 100 can mean the first surface 101 and the second surface 102 of the main body 100, respectively. One side of the main body 100 can be used as a mounting surface by mounting the capacitor component 1000 according to this embodiment onto a mounting board such as a printed circuit board.

[0024] The main body 100 includes a dielectric layer 110 and first and second internal electrode layers 121 and 122 that are alternately arranged with the dielectric layer 110 in between. Each of the dielectric layer 110, the first internal electrode layer 121, and the second internal electrode layer 122 is formed from multiple layers. Hereinafter, unless it is necessary to distinguish between the first and second internal electrode layers 121 and 122, they will be commonly referred to as internal electrode layers 121 and 122. Therefore, the explanation of the parts commonly referred to as internal electrode layers 121 and 122 can be applied in common to the first and second internal electrode layers 121 and 122.

[0025] The multiple dielectric layers 110 forming the main body 100 are in a sintered state, and the boundaries between adjacent dielectric layers 110 can be integrated to such an extent that they are difficult to see without using a scanning electron microscope (SEM).

[0026] The raw materials for forming the dielectric layer 110 are not particularly limited as long as sufficient capacitance can be obtained, and can be, for example, barium titanate (BaTiO3) powder. The material for forming the dielectric layer 110 can be a powder such as barium titanate (BaTiO3) to which various ceramic additives, organic solvents, plasticizers, binders, dispersants, etc., can be added according to the purpose of the present invention.

[0027] Cover layers 130 may be included at the top and bottom of the main body 100, i.e., at both ends in the thickness direction (Z direction). The cover layers 130 can perform a role in maintaining the reliability of the capacitor components against external shocks. The cover layer 110 can be formed using the material for forming the dielectric layer 110, or using the material for forming the dielectric layer 110 and a different material. For example, in the latter case, the material for forming the dielectric layer 110 and the material for forming the cover layer 110 may differ from each other in at least one of the composition, size, content, and degree of dispersion of ceramic particles in the materials, or at least one of the composition, size, content, and degree of dispersion of minor components in the materials may differ.

[0028] The internal electrode layers 121 and 122 are arranged alternately with the dielectric layer 110 and may include first and second internal electrode layers 121 and 122. The first and second internal electrode layers 121 and 122 are arranged alternately facing each other with the dielectric layer 110 in between, and can be exposed on the third and fourth surfaces 103 and 104 of the main body 100, respectively.

[0029] The internal electrode layers 121 and 122 are alternately exposed on the third surface 103 and the fourth surface 104, which are the end faces of the main body 100 in the longitudinal direction X, and are connected to the first and second external electrodes 210 and 220, respectively. That is, the first internal electrode layer 121 is exposed on the third surface 103 of the main body 100 and connected to the first external electrode 210, but is not exposed on the fourth surface 104 of the main body 100 and is not connected to the second external electrode 220. The second internal electrode layer 122 is exposed on the fourth surface 104 of the main body 100 and is connected to the second external electrode 220, but is not exposed on the third surface 103 of the main body 100 and is not connected to the first external electrode 210. Therefore, the first internal electrode layer 121 is a certain distance away from the fourth surface 104 of the main body 100, and the second internal electrode layer 122 is a certain distance away from the third surface 103 of the main body 100. In this case, the internal electrode layers 121 and 122 can be electrically isolated from each other by the dielectric layer 110 located in the center.

[0030] The internal electrode layers 121 and 122 have a base portion B, a connecting portion I, and a hole H2 that penetrates the base portion B. Furthermore, as will be described later, if the connecting portion I penetrates the base portion B, the internal electrode layers 121 and 122 further have a hole H1 in which the connecting portion I is located.

[0031] The base portion B forms the overall appearance of the internal electrode layers 121 and 122 and can have a shape similar to that of a plate overall. On the other hand, although Figures 3 and 5 show the base portion B as being composed of multiple portions spaced apart from each other, this is because Figures 3 and 5 show a part of the cross-section of the main body 100, and the base portion B is an integrated member, as shown in Figure 4, with multiple holes H1 and H2 formed therein, spaced apart from each other based on the plan view.

[0032] The base portion B may include, for example, one or more of palladium (Pd), silver (Ag), nickel (Ni), and copper (Cu). For example, the base portion B can be formed by vapor deposition (VAP) such as sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD) on a dielectric green sheet to form one or more of the following materials: palladium (Pd), a precious metal material such as a palladium-silver (Pd-Ag) alloy, and nickel (Ni) and copper (Cu), and then sintering the mixture. As another example, the base portion B can be formed by applying a conductive paste containing conductive powder made of one or more of the following materials: palladium (Pd), a precious metal material such as a palladium-silver (Pd-Ag) alloy, and nickel (Ni) and copper (Cu), to a dielectric green sheet, and then sintering the mixture.

[0033] The connecting portion I is a part of the internal electrode layers 121 and 122, arranged on the base portion B at a distance from each other, and contains a conductive material different from that of the base portion B. The connecting portion I may contain one or more elements selected from the group consisting of indium (In) and tin (Sn). For example, the connecting portion I may be indium (In) oxide (indium oxide, In2O3) containing indium (In), tin (Sn) oxide (tin oxide, SnO2) containing tin (Sn), or indium-tin oxide (Indium Tin Oxide, ITO) containing both indium (In) and tin (Sn). As an example, the connecting portion I can be formed by forming a conductive material for forming the base portion B on a dielectric green sheet using vapor deposition such as sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD), and a conductive material for forming the connecting portion I (e.g., indium tin oxide, ITO) together or sequentially, and then sintering the mixture.

[0034] The connecting portion I can be formed in multiple units and arranged on the base portion B at a distance from each other. From this perspective, each of the multiple connecting portion I can be said to be arranged on the base portion B in the form of an island. Alternatively, each of the multiple connecting portion I can be seen as a part of the internal electrode layers 121 and 122 that exists in the form of an island. The connecting portion I can be arranged on at least a part of the multiple holes H1 and H2 formed in the internal electrode layers 121 and 122 and fill at least a part of the cut-off region (multiple holes H1 and H2) of the internal electrode layers 121 and 122, thereby improving the connectivity of the internal electrode layers 121 and 122. That is, as shown in Figure 3, the connecting portion I can be arranged on hole H1 and connect at least a part of the cut-off region of the internal electrode layers 121 and 122.

[0035] When the connecting portion I contains indium-tin oxide (ITO), the molar ratio of indium (In) to tin (Sn) in the connecting portion I can be between 1 and 19. That is, the indium-tin oxide (ITO) used to form the connecting portion I can contain 50-95 mol% indium (In) and 5-50 mol% tin (Sn). If the molar ratio of indium (In) to tin (Sn) in the connecting portion I is less than 1, the conductive properties of the connecting portion I may deteriorate, resulting in poor performance of the component. If the molar ratio of indium (In) to tin (Sn) in the connecting portion I exceeds 19, the manufacturing cost of the component may increase. On the other hand, the molar ratio between tin (Sn) and indium (In) described above can be measured by TEM-EDS, but the scope of the present invention is not limited to this.

[0036] Typically, the internal electrode layer is formed by printing a conductive paste for internal electrode layer formation onto a dielectric green sheet, stacking and cutting multiple green sheets to produce green chips, and then sintering the green chips. The conductive paste is made by mixing metal powders such as nickel (Ni), ceramic powders, binders, and solvents. However, nano-sized nickel (Ni) powder used in the conductive paste can develop necking between metal powders at around 400°C to 450°C, and excessive sintering can occur at sintering temperatures above 1000°C. As a result, delamination and aggregation can occur in the internal electrode layer after sintering. Such delamination and aggregation of the internal electrode layer can reduce the uniformity of the internal electrode layer's thickness. Furthermore, delamination of the internal electrode layer can reduce the capacitance of the capacitor component, while aggregation of the internal electrode layer can cause an increase in the thickness of the internal electrode layer and a decrease in the thickness of the dielectric layer.

[0037] In order to solve the above-mentioned problems, the capacitor component 1000 according to this embodiment is configured such that the internal electrode layers 121 and 122 include a base portion B and a connecting portion I which is spaced apart from the base portion B and contains a different conductive material from the base portion B. That is, since the connecting portion I is spaced apart from the base portion B and contains a different conductive material from the base portion B, the diffusion of the conductive material constituting the base portion B is reduced during the sintering process, thereby preventing the above-mentioned problems of the conventional technology (peeling and aggregation of the internal electrode layer). The above-described structure of the internal electrode layers 121 and 122 can be realized by vapor-depositing a material for forming the connecting portion I and a material for forming the base portion B together or sequentially onto a dielectric green sheet, and then sintering it. During the sintering process, the different materials between the material for forming the connecting portion I and the material for forming the base portion suppress diffusion between them, and as a result, the internal electrode layers 121 and 122 including the connecting portion I described above can be realized. Alternatively, the above-described structure of the internal electrode layers 121 and 122 can be realized by applying a conductive paste for forming the connecting portion I and a conductive paste for forming the base portion B to a dielectric green sheet in separate regions, and then sintering the sheet.

[0038] In the capacitor component 1000 according to this embodiment, if the base portion B contains nickel (Ni) and the connecting portion I contains indium tin oxide (ITO), the problems of the prior art described above (peeling and aggregation of the internal electrode layer) can be prevented even more effectively. Specifically, due to the relatively low solubility of indium tin oxide (ITO) in relation to nickel (Ni), the diffusion of nickel (Ni) contained in the base portion B during the sintering process is reduced, suppressing the aggregation of nickel (Ni) and improving the uniformity of the thickness of the internal electrode layers 121 and 122. Furthermore, even if a cut region (e.g., a pore) is formed in the base portion B due to the aggregation of nickel (Ni), the relatively low solubility between nickel (Ni) and indium tin oxide (ITO) allows indium tin oxide (ITO) to be disposed in at least a portion of the cut region of the base portion B (connecting portion I). As a result, the base portion B and the internal electrode layers 121 and 122 applied to this embodiment can each have relatively high connectivity.

[0039] As described later, the capacitor component 1000 according to this embodiment can be formed by vapor deposition of a dielectric green sheet (110' in Figures 6 to 13) to create a conductive thin film (121' (122') in Figures 7 to 13), and then sintering it. Compared to conventional techniques that print and sinter a conductive paste for forming an internal electrode layer, the conductive thin film has a dense arrangement of conductors, allowing for the formation of relatively dense internal electrode layers 121 and 122. As a result, the internal electrode layers 121 and 122 can be made more connectable and have a more uniform thickness compared to conventional methods. Furthermore, the capacitor component 1000 according to this embodiment is advantageous in reducing the thickness of the internal electrode layers 121 and 122 by the vapor deposition method described above.

[0040] As shown in Figures 3 and 5, the connecting portion I can either penetrate the base portion B or not. In the former case, the connecting portion I can be placed in the hole H1 that penetrates the base portion B, and in the latter case, the connecting portion I can be placed in a groove formed in the base portion B. On the other hand, for the sake of explanation, the following description will assume that the connecting portion I penetrates the base portion B, but the scope of the present invention is not limited to this. When the connecting portion I is placed in a manner that penetrates the base portion B, electrode aggregation due to diffusion during the sintering process of the conductive particles constituting the base portion B can be prevented more effectively.

[0041] Figure 5 conceptually shows one of the internal electrode layers 121 and 122, which is shown in a cross-section of the main body 100 along the thickness direction Z at the center of the width direction Y of the main body 100, that is, in a cross-section of the main body 100 along the length direction X and thickness direction Z. Specifically, referring to Figure 5, the internal electrode layers 121 and 122 include a base portion B, a connecting portion I, and a plurality of holes H1 and H2. The holes H1 and H2 are regions of the internal electrode layers 121 and 122 where the base portion B is not formed, and the connecting portion I is located in the first hole H1, and the second hole H2 may contain a dielectric material constituting the dielectric layer 110, or it may be a void. That is, a conductor may not be located in the second hole H2.

[0042] Referring to Figure 5, in the cross-section of the main body 100 along the Z direction, the total length L of the internal electrode layers 121 and 122 along the X direction is T In contrast, the length L along the X direction of the base portion B and the connecting portion I respectively B1 , L B2 , L B3 , L B4 , L I1 , L I2The ratio of the total can be 0.8 or more. The above ratio is related to the connectivity of the internal electrode layers 121 and 122 described above. When the ratio is less than 0.8, the connectivity of the internal electrode layers 121 and 122 is poor, and the capacitance may decrease. Also, in the cross-section of the main body 100 along the Z direction, the total length L of the internal electrode layers 121 and 122 along the X direction T with respect to the length L of the second hole H2 along X H2 The ratio of the total can be 0.2 or less.

[0043] Here, the total length L of the internal electrode layers 121 and 122 along the X direction T can be measured using an optical image or a SEM image obtained by scanning the XZ cross-section obtained by cutting the capacitor component at the central part in the Y direction. As an example, the total length L of the internal electrode layers 121 and 122 along the X direction T means selecting any one of the internal electrode layers 121 and 122 shown in the above image, measuring the dimension along the X direction of the selected one internal electrode layer multiple times along the Z direction, and taking the arithmetic mean thereof. Such multiple measurements along the Z direction can be performed at equal intervals along the Z direction, but are not limited thereto. Or, the total length L of the internal electrode layers 121 and 122 along the X direction T means calculating the length along the X direction of each of the internal electrode layers 121 and 122 by the method described above for each of the plurality of internal electrode layers 121 and 122 shown in the above image, and dividing such a value by the total number of the internal electrode layers 121 and 122. On the other hand, the description of the measurement method of the total length L of the internal electrode layers 121 and 122 along the X direction T is for the length L of the base part B along the X direction B1 L B2 L B3 L B4 the length L of the connection part I along the X direction I1 L I2 and the length of the conductor-unformed region along the X direction (the length L of the second hole H2 H2This can be applied similarly to each of them.

[0044] The volume ratio (vol%) of the connecting portion I to the volume of the base portion B can be between 1 and 30. If the volume ratio (vol%) of the connecting portion I to the volume of the base portion B is less than 1, the proportion of the connecting portion I within the internal electrode layers 121 and 122 is low, which may reduce the effects described above, namely the improvement in the connectivity and thickness uniformity of the internal electrode layers 121 and 122. If the volume ratio (vol%) of the connecting portion I to the volume of the base portion B is greater than 30, the interface between the base portion B and the connecting portion I may increase unnecessarily, which may degrade the characteristics of the component.

[0045] The volumes of the base portion B and the connecting portion I can be defined using optical or SEM images obtained by scanning an XY cross-section (cross-section) of the capacitor component cut so that the internal electrode layers 121 and 122 are exposed. For example, the areas of the base portion B and the connecting portion I can be determined from the above image and defined as the respective volumes of the base portion B and the connecting portion I. On the other hand, as mentioned above, since the connecting portion I is formed in multiple interconnected parts on the base portion B, the area of ​​the connecting portion I can mean the sum of the areas of the multiple connecting portions I.

[0046] The base portion B may not contain the dielectric of the dielectric layer 110. For example, when a conductive thin film is formed by vapor deposition and then sintered to form internal electrode layers 121 and 122, the conductive thin film may not contain ceramic powder such as barium titanate (BaTiO3) contained in conventional conductive pastes for forming internal electrode layers. As a result, unlike conventional designs, in this embodiment, the base portion B may not contain the dielectric of the dielectric layer 110. For example, if the dielectric layer 110 contains barium titanate (BaTiO3) as a dielectric, the base portion B may contain each element constituting the dielectric (Ba, Ti, etc.) due to material diffusion during the sintering process, but it may not contain the dielectric itself (e.g., BaTiO3) that constitutes the dielectric layer 110. This can be confirmed by X-ray diffraction (XRD) or EDS (Energy Dispersive Spectroscopy) mapping, which shows that the base portion B does not contain dielectric.

[0047] The thickness of the internal electrode layers 121 and 122 can be between 10 nm and 500 nm. If the thickness of the internal electrode layers 121 and 122 is less than 10 nm, the connectivity between the internal electrode layers 121 and 122 may decrease, resulting in a reduction in capacitance. If the thickness of the internal electrode layers 121 and 122 exceeds 500 nm, the dielectric layer 110 will be formed thinner than that of a component of the same size, making it difficult to achieve electrical insulation between the internal electrode layers 121 and 122.

[0048] The thicknesses of the internal electrode layers 121 and 122 can be measured using an optical image or SEM image obtained by scanning the XZ cross-section (XZ section) of the capacitor component cut in the center in the Y direction. For example, the thickness of the internal electrode layers 121 and 122 can be defined as the arithmetic mean obtained by selecting one of the internal electrode layers 121 and 122 shown in the image above, measuring the dimension along the Z direction of the selected internal electrode layer multiple times along the X direction, and taking the arithmetic mean of these measurements. Such multiple measurements along the X direction can be performed at equal intervals along the X direction, but are not limited to this. Alternatively, the thickness of the internal electrode layers 121 and 122 can be defined as the thickness of each internal electrode layer 121 and 122 calculated using the method described above for each of the multiple internal electrode layers 121 and 122 shown in the image above, and dividing this by the total number of internal electrode layers 121 and 122.

[0049] The ratio of the difference in thickness between adjacent internal electrode layers 121 and 122 to the thickness of either one of the adjacent internal electrode layers 121 and 122 can be 5% or less. Referring to Figure 3, one of the first internal electrode layers 121 and one of the second internal electrode layers 122 are adjacent to each other, and the ratio of the difference between the thicknesses T1 and T2 of the first and second internal electrode layers 121 and 122 to the thickness T1 of the first internal electrode layer 121 can be 5% or less. In other words, the thicknesses of the multiple internal electrode layers 121 and 122 can be relatively uniform. The thicknesses T1 and T2 of the first and second internal electrode layers 121 and 122 can be calculated using the method described above.

[0050] The ratio of the difference between the average thickness and the maximum thickness of the internal electrode layers 121 and 122 can be 5% or less relative to the average thickness of the internal electrode layers 121 and 122. The average thickness and the maximum thickness of the internal electrode layers 121 and 122 can be calculated by selecting one of the multiple internal electrode layers 121 and 122, as explained above, or by considering all of the multiple internal electrode layers 121 and 122.

[0051] The external electrodes 210 and 220 are positioned on the main body 100 and connected to the internal electrode layers 121 and 122. The external electrodes 210 and 220 may also include first and second external electrodes 210 and 220, which are positioned on the third and fourth surfaces 103 and 104 of the main body 100, respectively, and connected to the first and second internal electrode layers 121 and 122, respectively, as shown in Figures 1 and 2.

[0052] The first and second external electrodes 210 and 220 are arranged on the third and fourth surfaces 103 and 104 of the main body 100, respectively, and may include first and second connecting portions connected to the first and second internal electrode layers 121 and 122, and first and second extension portions extending from the first and second connecting portions to the first surface 101 of the main body 100. The first and second extension portions are arranged to be spaced apart from each other on the first surface 101 of the main body 100. On the other hand, the first and second extension portions can extend not only to the first surface 101 of the main body 100, but also to the second, fifth and sixth surfaces 102, 105, and 106 of the main body 100, respectively, but the scope of the present invention is not limited thereto. That is, as shown in Figure 1, each of the external electrodes 210 and 220 of the present invention can be a normal type formed on five surfaces of the main body 100, but is not limited thereto, and can be an L type formed on two surfaces of the main body 100, a C type formed on three surfaces of the main body 100, and so on.

[0053] The external electrodes 210 and 220 can be formed using any material that has electrical conductivity, such as metal, and the specific material can be determined considering electrical properties, structural stability, etc. Furthermore, they can have a multilayer structure. For example, each of the external electrodes 210 and 220 may include a first layer and a second layer. The first layer can be formed by sintering a sintered conductive paste containing a conductive metal and glass, by curing a hardened conductive paste containing a conductive metal and a base resin, or by vapor deposition. The second layer may be a nickel (Ni) plated layer and a tin (Sn) plated layer sequentially formed on the first layer by a plating method.

[0054] On the other hand, although this embodiment describes a structure in which the capacitor component 100 has two external electrodes 210 and 220, the number and shape of the external electrodes 210 and 220 can be changed according to the shape of the internal electrode layers 121 and 122 or other purposes.

[0055] Capacitor component manufacturing method Figures 6 to 13 are sequential diagrams showing a method for manufacturing a capacitor component according to one embodiment of the present invention. Specifically, Figures 6, 7, and 11 to 13 show a method for manufacturing a capacitor component according to one embodiment of the present invention, while Figures 8 to 10 each show various examples related to the structure of a conductive thin film.

[0056] First, referring to Figure 6, a dielectric green sheet is formed on the support plate.

[0057] The support plate 10 can be made of PET film or the like, and can support the dielectric green sheet 110' during the process.

[0058] The dielectric green sheet 110' is configured to become a dielectric layer 110 through a subsequent process, and can be formed by applying a dielectric paste to the support plate 10. The dielectric paste can be a ceramic powder such as barium titanate (BaTiO3) which is a dielectric, to which various ceramic additives, organic solvents, plasticizers, binders, dispersants, etc., are added according to the purpose of the present invention.

[0059] Next, referring to Figure 7, a mask is placed on one side of the dielectric green sheet, and a conductive thin film is formed on the dielectric green sheet.

[0060] The mask M may include an opening O on one surface of the dielectric green sheet 110' that corresponds to the region where the conductive thin films 121' and 122' described later are formed. The mask M can be a mask or stencil that can be used in ordinary vapor-phase deposition. On the other hand, although Figure 7 shows the mask M in contact with one surface of the dielectric green sheet 110', this is merely illustrative, and the present invention also includes cases where the mask M is separated from one surface of the dielectric green sheet 110' by a predetermined distance.

[0061] The conductive thin films 121' and 122' are configured to become internal electrode layers 121 and 122 through subsequent processes, and can be formed on a region of the dielectric green sheet 110' exposed as an opening O of the mask M by vapor deposition such as sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD). The conductive thin films 121' and 122' can be formed on a region of the dielectric green sheet 110' exposed as an opening O of the mask M, together with or sequentially deposited a first conductor for forming the base portion B and a second conductor for forming the connecting portion I. For example, the first conductor can be nickel (Ni), and the second conductor can be indium tin oxide (ITO).

[0062] Indium-tin oxide (ITO) can have a molar ratio of indium (In) to tin (Sn) of 1 to 19. That is, the indium-tin oxide (ITO) used to form the connecting part I can contain 50 to 95 mol% indium (In) and 5 to 50 mol% tin (Sn). If the molar ratio of indium (In) to tin (Sn) in the indium-tin oxide (ITO) is less than 1, the conductive properties of the connecting part I may deteriorate, resulting in poor component properties. If the molar ratio of indium (In) to tin (Sn) in the indium-tin oxide (ITO) exceeds 19, the manufacturing cost of the component may increase.

[0063] In the conductive thin films 121' and 122', the volume ratio (vol%) of the second conductor to the first conductor can be between 1 and 30. If the above ratio is less than 1, the proportion of the connecting portion I formed within the internal electrode layers 121 and 122 is low, which may reduce the effect of improving the connectivity and thickness uniformity of the internal electrode layers 121 and 122. If the above ratio exceeds 30, the interface between the base portion B and the connecting portion I increases unnecessarily, which may degrade the characteristics of the component.

[0064] The thickness of the conductive thin films 121' and 122' can be between 10 nm and 500 nm. If the thickness of the conductive thin films 121' and 122' is less than 10 nm, the connectivity of the internal electrode layers 121 and 122 may decrease, resulting in a reduction in capacitance. If the thickness of the conductive thin films 121' and 122' exceeds 500 nm, the dielectric layer 110 will be formed thinner than that of a component of the same size, making it difficult to achieve electrical insulation between the internal electrode layers 121 and 122. On the other hand, in this embodiment, the conductive thin films 121' and 122' are formed by vapor deposition and then sintered to form the internal electrode layers 121 and 122. Therefore, due to the dense structure of the conductive thin films 121' and 122', the thickness of the conductive thin films 121' and 122' before sintering and the thickness of the internal electrode layers 121 and 122 after sintering can be maintained at substantially the same level.

[0065] Figures 8 to 10 illustrate various forms of the conductive thin films 121' and 122'. Referring to Figure 8, the conductive thin films 121' and 122' can be formed by depositing a first conductor and a second conductor together in the same deposition process. For example, the conductive thin films 121' and 122' shown in Figure 8 can be formed by depositing nickel (Ni) and indium tin oxide (ITO) together on one surface of a dielectric green sheet 110'. Referring to Figures 9 and 10, the conductive thin films 121' and 122' can be a double-layer structure formed by depositing the first conductor first and then depositing the second conductor (Figure 9), or a double-layer structure formed by depositing the second conductor first and then depositing the first conductor (Figure 10).

[0066] Next, referring to Figure 11, the mask is removed from one side of the dielectric green sheet.

[0067] For example, a release layer can be formed on one surface of the mask M that is in contact with one surface of the dielectric green sheet 110', and the mask M can be removed using such a release layer. Alternatively, the mask M can be removed using a stripping solution or the like.

[0068] Next, referring to Figure 12, multiple dielectric green sheets with a conductive thin film formed on one side are manufactured, then these are stacked to form a laminate, and the laminate is diced to form green chips.

[0069] Multiple dielectric green sheets can be manufactured based on the process described in Figures 6, 7, and 11. After this, the support plates 10 can be separated from the multiple dielectric green sheets and then stacked.

[0070] The laminate can be diced and separated into multiple green chips, each corresponding to the size of an individual capacitor component body.

[0071] Next, referring to Figure 13, the green chip is sintered to form the main body.

[0072] Although not shown in the diagram, after forming the main body 100, a process for forming external electrodes can be carried out, and if necessary, a process for forming a moisture-resistant layer or the like on the surface of the main body 100 can be carried out.

[0073] Although one embodiment of the present invention has been described above, any person with ordinary skill in the relevant art can modify and change the present invention in various ways, such as by adding, changing, or deleting components, without departing from the spirit of the invention as described in the claims, and this can also be said to fall within the scope of the rights of the present invention. According to this specification, the following items are also disclosed: [Item 1] A main body including a dielectric layer and an internal electrode layer, The body includes an external electrode arranged on the main body and connected to the internal electrode layer, At least one hole is formed in the internal electrode layer. A capacitor component wherein the hole contains a region containing one or more elements selected from the group consisting of indium (In) and tin (Sn). [Item 2] The capacitor component described in item 1, wherein the internal electrode layer contains nickel (Ni). [Item 3] The aforementioned region includes all of the indium (In) and tin (Sn) components as described in item 2. [Item 4] The aforementioned region is a capacitor component as described in item 3, wherein the molar ratio of indium (In) to tin (Sn) is 1 or more and 19 or less. [Item 5] The aforementioned holes are formed in the internal electrode layer in a plurality of locations spaced apart from each other. The capacitor component according to item 2, wherein the hole includes a first hole in which the region is located and a second hole in which the region is not located. [Item 6] In the cross-section of the main body along the first direction, The capacitor component according to item 5, wherein the sum of the lengths of the second holes along the second direction is 0.2 or less compared to the total length of the internal electrode layer along the second direction perpendicular to the first direction. [Item 7] The capacitor component according to item 5, wherein the ratio (vol%) of the volume of the region to the volume of the internal electrode layer is 1 or more and 30 or less. [Item 8] The capacitor component described in item 2, wherein the thickness of the internal electrode layer is 10 nm or more and 500 nm or less. [Item 9] The capacitor component according to item 8, wherein the ratio of the difference between the thicknesses of adjacent internal electrode layers to the thickness of any one of the adjacent internal electrode layers is 5% or less. [Item 10] The capacitor component described in item 2, wherein the region does not include the dielectric of the dielectric layer. [Item 11] A main body including a dielectric layer and an internal electrode layer, The body includes an external electrode arranged on the main body and connected to the internal electrode layer, The internal electrode layer has a plurality of holes that penetrate through it. A capacitor component in which at least some of the plurality of holes contain regions containing conductive materials different from the internal electrode layer. [Item 12] The aforementioned region comprises indium tin oxide (ITO), as described in item 11, for the capacitor component. [Item 13] The capacitor component described in item 12, wherein the internal electrode layer contains nickel (Ni). [Item 14] The plurality of holes include a first hole in which the region is located and a second hole in which the region is not located. The capacitor component according to item 13, wherein, in the cross-section of the body along the first direction, the sum of the lengths of the second holes along the second direction is 0.2 or less compared to the total length of the internal electrode layer along the second direction perpendicular to the first direction. [Item 15] The step of forming a dielectric green sheet, The steps include forming a conductive thin film containing a first and a second conductor on the dielectric green sheet by vapor deposition, The step includes sintering the conductive thin film to form an internal electrode layer, The internal electrode layer includes the first conductor, A method for manufacturing a capacitor component, wherein a region containing the second conductor is formed in the internal electrode layer. [Item 16] The first conductor is nickel (Ni), The method for manufacturing a capacitor component as described in item 15, wherein the second conductor is indium tin oxide (ITO). [Item 17] In the step of forming the conductive thin film, The method for manufacturing a capacitor component according to item 16, wherein the volume ratio (vol%) of the second conductor to the volume of the first conductor is 1 or more and 30 or less. [Item 18] In the step of forming the conductive thin film, The method for manufacturing a capacitor component according to item 16 or 17, wherein the first and second conductors are deposited together on the dielectric green sheet. [Item 19] In the step of forming the conductive thin film, A method for manufacturing a capacitor component according to any one of items 16 to 18, wherein the first and second conductors are formed sequentially on the dielectric green sheet. [Item 20] A method for manufacturing a capacitor component according to any one of items 15 to 19, wherein, in the step of forming the conductive thin film, the average thickness of the conductive thin film is 10 nm or more and 500 nm or less. [Explanation of symbols]

[0074] 10 Support plate 100 Main Unit 110 Dielectric layer 110' Dielectric Green Sheet 121, 122 Internal electrode layer 121', 122' Conductive thin film 130 Cover Layer 210, 220 external electrode B Base section I connection part H1, H2 hole M Mask O opening 1000 Capacitor Components

Claims

1. A main body including a dielectric layer and an internal electrode layer, The body includes an external electrode arranged on the main body and connected to the internal electrode layer, At least one hole is formed in the internal electrode layer. The aforementioned pore contains regions containing indium (In) and tin (Sn), The aforementioned region has a molar ratio of indium (In) to tin (Sn) of 1 or more and 19 or less. The region in question is a capacitor component containing indium tin oxide (ITO).

2. The capacitor component according to claim 1, wherein the internal electrode layer contains nickel (Ni).

3. The aforementioned holes are formed in the internal electrode layer in a plurality of locations spaced apart from each other. The capacitor component according to claim 2, wherein the hole includes a first hole in which the region is located and a second hole in which the region is not located.

4. In the cross-section of the main body along the first direction, The capacitor component according to claim 3, wherein the sum of the lengths of the second holes along the second direction is 0.2 or less with respect to the total length of the internal electrode layer along the second direction perpendicular to the first direction.

5. The capacitor component according to claim 3, wherein the ratio (vol%) of the volume of the region to the volume of the internal electrode layer is 1 or more and 30 or less.

6. The capacitor component according to claim 2, wherein the thickness of the internal electrode layer is 10 nm or more and 500 nm or less.

7. The capacitor component according to claim 6, wherein the ratio of the difference between the thicknesses of each of the adjacent internal electrode layers to the thickness of any one of the adjacent internal electrode layers is 5% or less.

8. The capacitor component according to claim 2, wherein the region does not include the dielectric of the dielectric layer.

9. A main body including a dielectric layer and an internal electrode layer, The body includes an external electrode arranged on the main body and connected to the internal electrode layer, The internal electrode layer has a plurality of holes that penetrate through it. At least some of the aforementioned multiple holes contain regions containing conductive materials different from those in the internal electrode layer. The region in question is a capacitor component containing indium tin oxide (ITO).

10. The capacitor component according to claim 9, wherein the internal electrode layer contains nickel (Ni).

11. The plurality of holes include a first hole in which the region is located and a second hole in which the region is not located. The capacitor component according to claim 10, wherein in a cross-section of the main body along the first direction, the sum of the lengths of the second holes along the second direction is 0.2 or less with respect to the total length of the internal electrode layer along the second direction perpendicular to the first direction.

12. The step of forming a dielectric green sheet, The steps include forming a conductive thin film containing a first and a second conductor on the dielectric green sheet by vapor deposition, The step includes sintering the conductive thin film to form an internal electrode layer, The internal electrode layer includes the first conductor, The internal electrode layer has a region formed therein, which includes the second conductor. A method for manufacturing a capacitor component, wherein the second conductor is indium tin oxide (ITO).

13. The method for manufacturing a capacitor component according to claim 12, wherein the first conductor is nickel (Ni).

14. In the step of forming the conductive thin film, The method for manufacturing a capacitor component according to claim 13, wherein the volume ratio (vol%) of the second conductor to the volume of the first conductor is 1 or more and 30 or less.

15. In the step of forming the conductive thin film, The method for manufacturing a capacitor component according to claim 13 or 14, wherein the first and second conductors are deposited together on the dielectric green sheet.

16. In the step of forming the conductive thin film, The method for manufacturing a capacitor component according to any one of claims 13 to 15, wherein the first and second conductors are formed sequentially on the dielectric green sheet.

17. A method for manufacturing a capacitor component according to any one of claims 12 to 16, wherein in the step of forming the conductive thin film, the average thickness of the conductive thin film is 10 nm or more and 500 nm or less.

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