Liquid crystal elements, lighting devices, vehicle lighting systems

Abstract

To prevent the occurrence of a dark line and the like and reduction in the light resistance in a liquid crystal element.SOLUTION: A liquid crystal element comprises: a first substrate, a second substrate, and a liquid crystal layer; a plurality of pixel electrodes which are provided on the first substrate side by using a transparent conductive film and are different in the shapes in the plan view; a plurality of thin film switching elements which are provided on the first substrate side and are associated one by one with the respective pixel electrodes; a plurality of first distribution lines which are provided on the first substrate side by using the transparent conductive film and connect each pixel electrode with each thin film switching element; and an opposite electrode which is provided on the second substrate side and is arranged so as to overlap each pixel electrode in the plan view. All of the pixel electrodes are arranged in a first region irradiated with light for image formation. Each thin film switching element is arranged in a second region that is adjacent to the first region in the plan view and is not irradiated with the light for image formation.SELECTED DRAWING: Figure 4

Description

Technical Field

[0005]

[0001] The present disclosure relates to a liquid crystal element, a lighting device, and a vehicle lighting system.

Background Art

[0002] Japanese Patent Application Laid-Open No. 2006-58730 (Patent Document 1) describes an active matrix drive liquid crystal display device in which pixels each including an organic TFT are arranged at intersections of orthogonal gate lines and data lines, and a liquid crystal display device in which a source electrode, a drain electrode, an auxiliary capacitance electrode, etc. are formed of a transparent conductive material.

[0003] However, in this liquid crystal display device, although the aperture ratio is improved to some extent by the transparency of the auxiliary capacitance electrode, the portions such as the source electrode and the drain electrode do not contribute to image display even if they are made transparent, so ultimately these portions can always be in a dark state. Such portions that cause a dark state are not preferable because they significantly cause dark lines and dark spots particularly in applications where image formation is performed using strong light. In addition, since each organic TFT is arranged adjacent to each pixel electrode and these organic TFTs are also irradiated with light, there is also a possibility that the light resistance decreases particularly in applications where image formation is performed using strong light.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] One of the objects of the specific aspect according to the present disclosure is to provide a technology capable of preventing the occurrence of dark lines and the like and the decrease in light resistance in a liquid crystal element for applications where image formation is performed using strong light.

Means for Solving the Problems

[0006] [1] A liquid crystal element according to one embodiment of the present disclosure is: A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the aforementioned pixel electrodes is located within the first region to which image-forming light is irradiated. Each of the thin-film switching elements is arranged in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. Occasionally, A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one side of the first substrate. Each of the third wirings and each of the pixel electrodes are arranged on the first substrate side in the second layer, which is relatively far from one side of the first substrate. An insulating layer is provided between the first layer and the second layer. It is a liquid crystal element. [2] A liquid crystal element according to one embodiment of the present disclosure is: A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, Provided on the first substrate side using a transparent conductive film, a plurality of pixel electrodes including those with different planar view shapes, Provided on the first substrate side, a plurality of thin film switching elements respectively associated with each of the pixel electrodes, Provided on the first substrate side using a transparent conductive film, a plurality of first wirings connecting between each of the pixel electrodes and each of the thin film switching elements, Provided on the second substrate side, a counter electrode arranged so as to overlap with each of the pixel electrodes in a planar view, including, Each of the thin film switching elements has a plurality of first thin film switching elements and a plurality of second thin film switching elements, and at least each of the first thin film switching elements is formed using an organic semiconductor, Each of the pixel electrodes and each of the first switching elements are all arranged within a first region irradiated with image forming light, Each of the second thin film switching elements is arranged in a second region adjacent to the first region in a planar view and not irradiated with the image forming light Occasionally, A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one side of the first substrate. Each of the third wirings and each of the pixel electrodes are arranged on the first substrate side in the second layer, which is relatively far from one side of the first substrate. An insulating layer is provided between the first layer and the second layer. It is a liquid crystal element. [3] One embodiment of the liquid crystal element relating to this disclosure is, A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the thin-film switching elements comprises a plurality of first thin-film switching elements and a plurality of second thin-film switching elements, and at least each of the first thin-film switching elements is constructed using an organic semiconductor. Each of the aforementioned pixel electrodes and each of the aforementioned first thin-film switching elements are all located within the first region to which image-forming light is irradiated. Each of the second thin-film switching elements is positioned in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one side of the first substrate. Each of the third wirings is located on the first substrate side in a second layer that is relatively further from one side of the first substrate than the first layer. Each of the aforementioned pixel electrodes is arranged on the first substrate side in a third layer that is relatively further from one surface of the first substrate than the second layer. An insulating layer is provided between the first layer and the second layer, and between the second layer and the third layer. It is a liquid crystal element. [ 4 One embodiment of the lighting device relating to this disclosure is: The above 1 ~3 of the above The liquid crystal element described above, Light source and A light-collecting unit that collects the light emitted from the light source to form the image-forming light and directs the image-forming light onto the liquid crystal element, A pair of polarizing elements are arranged opposite each other with the liquid crystal element in between, A lens that projects light transmitted through the liquid crystal element, It is a lighting device that includes [a specific component]. [ 5 One aspect of a vehicle lighting system relating to this disclosure is: The aforementioned 4 A vehicle lighting fixture consisting of the following lighting devices, A sensor that detects objects present around the vehicle, A controller that controls the operation of the liquid crystal element according to the state of the object detected by the sensor, This is a vehicle lighting system that includes [specific components / features].

[0007] According to the above configuration, it is possible to prevent the occurrence of dark lines and a decrease in light resistance in liquid crystal elements or lighting devices using them that are used for image formation using strong light. [Brief explanation of the drawing]

[0008] [Figure 1] Figures 1(A) to 1(C) are partial cross-sectional views showing the configuration of the liquid crystal element of the first embodiment. [Figure 2] Figure 2 is a plan view showing the configuration of electrodes and wiring of the liquid crystal element in the first embodiment. [Figure 3] Figure 3 is a plan view showing the wiring configuration of the liquid crystal element in the first embodiment. [Figure 4] Figure 4 is a plan view illustrating the region where light is irradiated onto the liquid crystal element and the location where the sealing material is provided. [Figure 5] Figure 5 is a plan view showing the configuration of electrodes and wiring of the liquid crystal element in the second embodiment. [Figure 6] Figures 6(A) to 6(F) illustrate a manufacturing method for forming thin-film transistors using inorganic semiconductors and thin-film transistors using organic semiconductors in a mixed manner. [Figure 7] Figure 7 is a plan view showing the configuration of electrodes and wiring of the liquid crystal element in the third embodiment. [Figure 8] Figures 8(A) and 8(B) are partial cross-sectional views showing the configuration of the first substrate of the liquid crystal element according to the third embodiment. [Figure 9] Figures 9(A) and 9(B) show the configuration of a vehicle lighting system according to one embodiment, which is constructed using the liquid crystal elements of the above-described embodiment. [Modes for carrying out the invention]

[0009] (First Embodiment) Figures 1(A) to 1(C) are partial cross-sectional views showing the configuration of the liquid crystal element of the first embodiment. Figure 2 is a plan view showing the configuration of the electrodes and wiring of the liquid crystal element of the first embodiment. Figure 3 is a plan view showing the configuration of the wiring of the liquid crystal element of the first embodiment. Note that Figure 1(A) corresponds to the cross-section along line aa in Figure 2, Figure 1(B) corresponds to the cross-section along line bb in Figure 2, and Figure 1(C) corresponds to the cross-section along line cc in Figure 2.

[0010] The liquid crystal element 100 of the first embodiment shown in Figures 1(A) to 1(C) comprises, as its main components, a first substrate 1 and a second substrate 2 arranged opposite each other with a liquid crystal layer 5 in between, an insulating layer (insulating film) 3 provided on one side of the first substrate 1 facing the liquid crystal layer 5, a counter electrode 4 provided on one side of the second substrate 2 facing the liquid crystal layer 5, and a liquid crystal layer 5 arranged between each of the first substrate 1 and the second substrate 2.

[0011] The first substrate 1 and the second substrate 2 are, for example, translucent substrates with a rectangular shape in a plan view, and are arranged facing each other. Spherical spacers (not shown), made of, for example, a resin film, are dispersed between the first substrate 1 and the second substrate 2, and these spherical spacers maintain the gap between the substrates at a desired size (for example, about a few micrometers). Alternatively, columnar bodies made of resin or the like may be provided on the first substrate 1 side or the second substrate 2 side and used as spacers.

[0012] The insulating layer 3 is arranged on one side of the first substrate 1, covering a plurality of lower layer wirings 13a to 13c, lower layer wirings 14a to 14i, and a plurality of inter-pixel electrodes 15a to 15h provided on that side. This insulating film 3 is a film that provides electrical insulation between each lower layer wiring 13a, etc., and the pixel electrodes 10a to 10j and wirings 11a to 11p. As the insulating film 3, for example, an organic insulating film such as a siloxane-based insulating film or an acrylic-based insulating film, or an inorganic insulating film such as a SiNx film or a SiOx film can be used.

[0013] The counter electrode 4 is provided on one side of the second substrate 2 in an area that overlaps with at least each pixel electrode 10a in a plan view. The counter electrode 4 may be divided into multiple parts. The counter electrode 4 is constructed by appropriately patterning a transparent conductive film, such as indium tin oxide (ITO). In this embodiment, a pixel portion is formed in each of the areas where each pixel electrode 10a and the counter electrode 4 face each other.

[0014] The liquid crystal layer 5 is provided between the first substrate 1 and the second substrate 2. The liquid crystal layer 5 is made of, for example, a nematic liquid crystal material that has fluidity. The liquid crystal layer 5 is made of, for example, a liquid crystal material that has negative dielectric anisotropy. The thickness of the liquid crystal layer 5 can be, for example, about 4 μm. This liquid crystal layer 5 is surrounded by a sealing material 6 (see Figure 4) and protected from the outside. Although not shown in the figures, alignment films are provided on the first substrate 1 and the second substrate 2 as appropriate, and these alignment films define the initial orientation state of the liquid crystal layer 5.

[0015] In the first embodiment, the layer located relatively close to one side of the first substrate 1, including a plurality of lower wirings 13a to 13c, lower wirings 14a to 14i, and a plurality of inter-pixel electrodes 15a to 15h, corresponds to the "first layer," and the layer located relatively far from one side of the first substrate 1, including pixel electrodes 10a to 10j and wirings 11a to 11p, corresponds to the "second layer." The insulating layer 3 described above is provided between these first and second layers. Furthermore, each of the lower wirings 14a to 14i corresponds to the "first wiring," each of the lower wirings 13a to 13c corresponds to the "second wiring," and each of the wirings 11a to 11p corresponds to the "third wiring."

[0016] The pixel electrodes 10a to 10j are provided on one side of the insulating layer 3 (the side closest to the liquid crystal layer 5) on one side of the first substrate 1. Each pixel electrode 10a, etc., is constructed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO). As shown in Figure 2, each pixel electrode 10a to 10j includes those with different planar shapes and is provided physically separated from one another.

[0017] The pixel electrode 10a is rectangular in shape, elongated in the X direction (left-right direction) in a plan view. Each pixel electrode 10b and 10c is rectangular in shape, elongated in the X direction in a plan view, and is arranged adjacent to each other in the X direction. Each pixel electrode 10b and 10c has a Y-direction length that is approximately the same as the Y-direction length of the pixel electrode 10a, and is substantially the same shape in a plan view.

[0018] Each pixel electrode 10d and 10e has a length in the X direction that is approximately half the length of the pixel electrode 10a, and is substantially the same shape in a plan view. Each pixel electrode 10d and 10e is rectangular in shape, elongated in the Y direction in a plan view, and is positioned above each pixel electrode 10b and 10c in the figure, with the other pixel electrodes 10f, 10g, 10h, 10i, and 10j sandwiched between them.

[0019] Each pixel electrode 10f and 10g is a right-angled triangle that is elongated in the X direction when viewed from above, and is positioned above each pixel electrode 10b and 10c in the figure. Each pixel electrode 10f and 10g has equal lengths in the X and Y directions, is substantially the same shape when viewed from above, and is symmetrical in the figure.

[0020] Each pixel electrode 10h and 10i is a pentagonal shape that is elongated in the X direction when viewed from above, and is positioned above each pixel electrode 10f and 10g in the figure. Each pixel electrode 10h and 10i has equal lengths in the X and Y directions, is substantially the same shape when viewed from above, and is symmetrical in the figure.

[0021] In a plan view, the pixel electrode 10j is shaped like a downward-pointing isosceles triangle in the figure and is surrounded by each of the pixel electrodes 10f, 10g, 10h, and 10i.

[0022] The wirings 11a to 11p are provided on one side of the insulating layer 3 (the side closest to the liquid crystal layer 5) on one side of the first substrate 1. Each wiring 11a, etc., is constructed by appropriately patterning a transparent conductive film such as indium tin oxide (ITO). Each wiring 11a, etc., is provided in the same layer as each pixel electrode 10a, etc.

[0023] Wiring 11a has a planar shape extending in the Y direction and overlaps with semiconductor layers 12a, 12b, and 12c, respectively. Similarly, wiring 11e has a planar shape extending in the Y direction and overlaps with semiconductor layers 12d, 12e, and 12f, respectively. Similarly, wiring 11i has a planar shape extending in the Y direction and overlaps with semiconductor layers 12g, 12h, and 12i, respectively. Similarly, wiring 11n has a planar shape extending in the Y direction and overlaps with semiconductor layer 12j, respectively. These parts function as source / drain electrodes (input / output electrodes) in a thin-film transistor. Hereinafter, these parts may simply be referred to as "source / drain electrodes".

[0024] The wiring 11b is connected to the pixel electrode 10a and has a portion that overlaps with the semiconductor layer 12a. This portion functions as the source / drain electrode in a thin-film transistor.

[0025] The semiconductor layer 12a is provided so as to overlap with the source / drain electrodes of the wirings 11a and 11b. A thin-film transistor 7 is formed by these source / drain electrodes, the semiconductor layer 12a, the gate electrode which is the portion of the lower wiring 13a that overlaps with the semiconductor layer 12a (described later), and the insulating layer 3 interposed between each wiring 11a, 11b and the lower wiring 13a. The cross-sectional structure of this thin-film transistor 7 is the same as that shown in Figure 1(A) (and the same applies to other thin-film transistors 7 described below).

[0026] The semiconductor layer 12a has a relatively larger channel width (the width of the region forming the channel area, which is the length in the Y direction in the figure) than the other semiconductor layers 12b, etc. This is because the area of ​​the pixel electrode 10a connected to the thin-film transistor 7, which is composed of the semiconductor layer 12a, is larger than that of the other pixel electrodes 10b, etc., and therefore it is necessary to ensure a higher driving capability.

[0027] The semiconductor layer 12a and the other semiconductor layers 12b to 12j are preferably constructed using, for example, an organic semiconductor. Organic semiconductors can be patterned by simple methods such as printing, and since expensive photolithography processes using masks and vacuum processes are not required, manufacturing costs can be reduced.

[0028] Wiring 11c is connected to the pixel electrode 10b via the lower layer wiring 14a, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12b. The semiconductor layer 12b is provided so as to overlap with the respective source / drain electrodes of wiring 11a and wiring 11c. A thin-film transistor 7 is formed by these source / drain electrodes and semiconductor layer 12b, the gate electrode which is the portion of the lower layer wiring 13b that overlaps with the semiconductor layer 12b, and the insulating layer 3 interposed between each wiring 11a, 11c and the lower layer wiring 13b.

[0029] The wiring 11d is connected to the pixel electrode 10d via the lower wiring 14b, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12c. The semiconductor layer 12c is provided so as to overlap with the respective source / drain electrodes of wiring 11a and wiring 11d. A thin-film transistor 7 is formed by these source / drain electrodes, the semiconductor layer 12c, the gate electrode which is the portion of the lower wiring 13c that overlaps with the semiconductor layer 12c, and the insulating layer 3 interposed between each wiring 11a, 11d and the lower wiring 13c.

[0030] The wiring 11f is connected to the pixel electrode 10h via the lower wiring 14c, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12d. The semiconductor layer 12d is provided so as to overlap with the respective source / drain electrodes of wiring 11e and wiring 11f. A thin-film transistor 7 is formed by these source / drain electrodes and semiconductor layer 12d, the gate electrode which is the portion of the lower wiring 13a that overlaps with semiconductor layer 12d, and the insulating layer 3 interposed between each wiring 11e, 11f and the lower wiring 13a.

[0031] The wiring 11g is connected to the pixel electrode 10f via the lower layer wiring 14d, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12e. The semiconductor layer 12e is provided so as to overlap with the respective source / drain electrodes of the wiring 11e and wiring 11g. A thin-film transistor 7 is formed by these source / drain electrodes and the semiconductor layer 12e, the gate electrode which is the portion of the lower layer wiring 13b that overlaps with the semiconductor layer 12e, and the insulating layer 3 interposed between each wiring 11e, 11g and the lower layer wiring 13b.

[0032] The wiring 11h is connected to the pixel electrode 10j via the lower wiring 14e, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12f. The semiconductor layer 12f is provided so as to overlap with the respective source / drain electrodes of wiring 11e and wiring 11h. A thin-film transistor 7 is formed by these source / drain electrodes and the semiconductor layer 12f, the gate electrode which is the portion of the lower wiring 13c that overlaps with the semiconductor layer 12f, and the insulating layer 3 interposed between each wiring 11e, 11h and the lower wiring 13c.

[0033] The wiring 11j is connected to the pixel electrode 10c via the lower wiring 14f, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12g. The semiconductor layer 12g is provided so as to overlap with the respective source / drain electrodes of the wiring 11i and wiring 11j. A thin-film transistor 7 is formed by these source / drain electrodes, the semiconductor layer 12g, the gate electrode which is the portion of the lower wiring 13a that overlaps with the semiconductor layer 12g, and the insulating layer 3 interposed between each wiring 11i, 11j and the lower wiring 13a.

[0034] The wiring 11k is connected to the pixel electrode 10g via the lower wiring 14g, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12h. The semiconductor layer 12h is provided so as to overlap with the respective source / drain electrodes of the wiring 11i and wiring 11k. A thin-film transistor 7 is formed by these source / drain electrodes, the semiconductor layer 12h, the gate electrode which is the portion of the lower wiring 13b that overlaps with the semiconductor layer 12h, and the insulating layer 3 interposed between each wiring 11i, 11k and the lower wiring 13b.

[0035] The wiring 11m is connected to the pixel electrode 10i via the lower wiring 14h, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12i. The semiconductor layer 12i is provided so as to overlap with the respective source / drain electrodes of the wiring 11i and wiring 11m. A thin-film transistor 7 is formed by these source / drain electrodes, the semiconductor layer 12i, the gate electrode which is the portion of the lower wiring 13c that overlaps with the semiconductor layer 12i, and the insulating layer 3 interposed between each wiring 11i, 11m and the lower wiring 13c.

[0036] Wiring 11p is connected to the pixel electrode 10e via the lower layer wiring 14i, which will be described later, and has a portion (source / drain electrode) that overlaps with the semiconductor layer 12j. The semiconductor layer 12j is provided so as to overlap with the respective source / drain electrodes of wiring 11n and wiring 11p. A thin-film transistor 7 is formed by these source / drain electrodes and the semiconductor layer 12j, the gate electrode which is the portion of the lower layer wiring 13a that overlaps with the semiconductor layer 12j, and the insulating layer 3 interposed between each wiring 11n, 11p and the lower layer wiring 13a.

[0037] The lower layer wiring 13a has a planar shape extending in the X direction and has four portions extending in the Y direction. These four portions are arranged to overlap with the semiconductor layers 12a, 12d, 12g, and 12j in a planar view, and function as gate electrodes (control electrodes) in each thin-film transistor 7 that is composed of each semiconductor layer 12a, etc.

[0038] The lower layer wiring 13b has a planar shape extending in the X direction and has three portions extending in the Y direction. These three portions are arranged to overlap with the semiconductor layers 12b, 12e, and 12h in a planar view, and function as gate electrodes in each thin-film transistor 7, which is composed of each semiconductor layer 12b, etc.

[0039] The lower layer wiring 13c has a planar shape extending in the X direction and has three portions extending in the Y direction. These three portions are arranged to overlap with the semiconductor layers 12c, 12f, and 12i in a planar view, and function as gate electrodes in each thin-film transistor 7, which is composed of each semiconductor layer 12c, etc.

[0040] The lower layer wiring 14a has a planar shape extending in the Y direction in the figure and electrically connects the wiring 11c and the pixel electrode 10b. The lower layer wiring 14a is physically and electrically connected to the wiring 11c and the pixel electrode 10b, respectively, via each contact hole (schematically shown as a circle in the figure; the same applies hereinafter) provided in the insulating layer 3. In addition, the lower layer wiring 14a in this embodiment has a portion 114a that is positioned to overlap the gap between the pixel electrode 10b and the pixel electrode 10d and functions as an inter-pixel electrode. The "inter-pixel electrode" referred to here is an electrode that is at the same potential as the pixel electrode 10b, enabling the application of voltage to the liquid crystal layer 5, and effectively performing the function of expanding the pixel area (the same applies hereinafter).

[0041] The lower wiring 14b has a plan view shape extending in the Y direction in the figure and electrically connects the wiring 11d and the pixel electrode 10d. The lower wiring 14b is physically and electrically connected to the wiring 11d and the pixel electrode 10d, respectively, through contact holes provided in the insulating layer 3. In addition, the lower wiring 14b in this embodiment has a portion 114b that is positioned to overlap the gap between the pixel electrode 10d and the pixel electrode 10h and functions as an inter-pixel electrode.

[0042] The lower layer wiring 14c has a plan view shape extending in the Y direction in the figure and electrically connects the wiring 11f and the pixel electrode 10h. The lower layer wiring 14c is physically and electrically connected to the wiring 11f and the pixel electrode 10h, respectively, through contact holes provided in the insulating layer 3. In addition, the lower layer wiring 14c in this embodiment has a portion 114c that is positioned to overlap the gap between the pixel electrode 10h and the pixel electrodes 10f, 10i, and 10j and functions as an inter-pixel electrode.

[0043] The lower wiring 14d has a plan view shape extending in the Y direction in the figure and electrically connects the wiring 11g and the pixel electrode 10f. The lower wiring 14d is physically and electrically connected to the wiring 11g and the pixel electrode 10f, respectively, through contact holes provided in the insulating layer 3. In addition, the lower wiring 14d in this embodiment has a portion 114d that is positioned to overlap the gap between the pixel electrode 10f and the pixel electrode 10j and functions as an inter-pixel electrode.

[0044] The lower wiring 14e has a plan view shape extending in the Y direction in the figure and electrically connects the wiring 11h and the pixel electrode 10j. The lower wiring 14e is physically and electrically connected to the wiring 11h and the pixel electrode 10j, respectively, through contact holes provided in the insulating layer 3. In addition, the lower wiring 14e in this embodiment has a portion 114e that is positioned to overlap the gap between the pixel electrode 10j and the pixel electrodes 10f and 10g and functions as an inter-pixel electrode.

[0045] The lower layer wiring 14f has a plan view shape extending in the Y direction in the figure, and electrically connects the wiring 11j and the pixel electrode 10c. The lower layer wiring 14f is physically and electrically connected to the wiring 11j and the pixel electrode 10c, respectively, through contact holes provided in the insulating layer 3.

[0046] The lower wiring 14g has a planar shape extending in the Y direction in the figure and electrically connects the wiring 11k and the pixel electrode 10g. The lower wiring 14g is physically and electrically connected to the wiring 11k and the pixel electrode 10g, respectively, through contact holes provided in the insulating layer 3. In addition, the lower wiring 14g in this embodiment has a portion 114g that is positioned to overlap the gap between the pixel electrode 10g and the pixel electrode 10c and functions as an inter-pixel electrode.

[0047] The lower wiring 14h has a planar shape extending in the Y direction in the figure and electrically connects the wiring 11m and the pixel electrode 10i. The lower wiring 14g is physically and electrically connected to the wiring 11m and the pixel electrode 10i, respectively, through contact holes provided in the insulating layer 3. In addition, the lower wiring 14h in this embodiment has a portion 114h that is positioned to overlap the gap between the pixel electrode 10i and the pixel electrodes 10g and 10j and functions as an inter-pixel electrode.

[0048] The lower wiring 14i has a plan view shape extending in the Y direction in the figure and electrically connects the wiring 11p and the pixel electrode 10e. The lower wiring 14g is physically and electrically connected to the wiring 11p and the pixel electrode 10e, respectively, through contact holes provided in the insulating layer 3. In addition, the lower wiring 14i in this embodiment has a portion 114i that is positioned to overlap the gap between the pixel electrode 10c and the pixel electrode 10e and functions as an inter-pixel electrode.

[0049] The interpixel electrode 15a is physically and electrically connected to the pixel electrode 10e via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10e and the pixel electrodes 10g and 10i. When a voltage is applied to the pixel electrode 10e, the interpixel electrode 15 becomes at the same potential as the pixel electrode 10e, thereby substantially expanding the pixel area (the same applies to the other interpixel electrodes described below).

[0050] The interpixel electrode 15b is physically and electrically connected to the pixel electrode 10a via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10a and the pixel electrode 10c.

[0051] The interpixel electrode 15c is physically and electrically connected to the pixel electrode 10c via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10c and the pixel electrodes 10e and 10g.

[0052] The interpixel electrode 15d is physically and electrically connected to the pixel electrode 10b via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10b and the pixel electrodes 10f and 10j.

[0053] The interpixel electrode 15e is physically and electrically connected to the pixel electrode 10a via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10a and the pixel electrodes 10b and 10c.

[0054] The interpixel electrode 15f is physically and electrically connected to the pixel electrode 10b via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10b and the pixel electrode 10f.

[0055] The interpixel electrode 15g is physically and electrically connected to the pixel electrode 10a via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10a and the pixel electrode 10b.

[0056] The interpixel electrode 15h is physically and electrically connected to the pixel electrode 10a via a contact hole in the insulating layer 3, and is positioned to overlap the gap between the pixel electrode 10a and the pixel electrode 10b.

[0057] The aforementioned lower layer wirings 14f, 14g, and 14h are positioned between the inter-pixel electrodes 15b, 15c and inter-pixel electrodes 15d, 15e. The aforementioned lower layer wirings 14d and 14e are positioned between the inter-pixel electrodes 15d, 15e and inter-pixel electrodes 15f, 15g. The aforementioned lower layer wirings 14a, 14b, and 14c are positioned between the inter-pixel electrodes 15f, 15g and inter-pixel electrode 15h.

[0058] In the liquid crystal element 100 of the first embodiment, a voltage (scanning signal) is applied to each thin-film transistor 7 via each lower layer wiring 13a to 13c, and a voltage (data signal) is applied via each wiring 11a, 11e, 11i, and 11n, thereby supplying a drive voltage to each pixel electrode 10a, etc., individually. As a result, the light transmission state in the pixel portion defined according to each pixel electrode 10a, etc., can be individually controlled to form an image using transmitted light.

[0059] In the liquid crystal element 100 of the first embodiment, by using lower layer wiring 13a, etc., it becomes unnecessary to provide wiring between each pixel electrode 10a, etc., so that the gap between each pixel electrode 10a in a plan view can be made narrower. As a result, the light utilization efficiency is increased and the problem of dark grid, where the area between pixels becomes dark, can be suppressed. This is particularly beneficial in situations where strong light is incident on the liquid crystal element 100, such as when the liquid crystal element 100 is incorporated into a vehicle light fixture. Furthermore, by providing inter-pixel electrodes, the above-mentioned dark grid problem is further suppressed and the light utilization efficiency is improved.

[0060] Figure 4 is a plan view illustrating the region to which light is irradiated onto the liquid crystal element and the location where the sealing material is provided. In the first embodiment, when the liquid crystal element 100 is incorporated into the lighting device described later, the region that includes each pixel electrode 10a to 10j in a plan view but does not include each thin-film transistor 7 (shown by a dashed line in the figure) is set as the irradiated region 8, which is the region to be irradiated with light. Therefore, the irradiated region 8 includes only transparent (light-transmitting) wirings, underlays, and pixel electrodes. The irradiated region 8 corresponds to the "first region," and the region within the area surrounded by the sealing material 6, excluding the irradiated region 8, corresponds to the "second region."

[0061] In conventional liquid crystal elements, each thin-film transistor was provided adjacent to each pixel electrode in a one-to-one correspondence. This often required a light-shielding film to prevent light from entering each thin-film transistor, as well as a metal film to constitute the gate electrode of each thin-film transistor. In contrast, the liquid crystal element 100 of this embodiment does not require such a light-shielding film or the like within the irradiated area 8. Therefore, even in situations where strong light is incident on the liquid crystal element 100, such as when it is incorporated into a vehicle light fixture, it is possible to prevent malfunctions caused by the liquid crystal layer 5 within the irradiated area 8 becoming too hot and exceeding its phase transition temperature. This is because there are no light-shielding films or metal films within the irradiated area 8 that generate heat due to light irradiation. Furthermore, by arranging each thin-film transistor 7 outside the irradiated area 8, degradation of each thin-film transistor 7 due to strong light irradiation can be prevented.

[0062] Furthermore, in the liquid crystal element 100 of the first embodiment, each lower layer wiring 13a, etc., is arranged so that, at least within the irradiated area 8, almost all of them overlap with each pixel electrode 10a in a plan view. This makes it possible to almost completely prevent malfunctions caused by the voltage of each lower layer wiring 13a being applied to the liquid crystal layer 5.

[0063] Furthermore, the encapsulating material 6 is provided such that, in a plan view, it includes each pixel electrode 10a to 10j and also includes each thin-film transistor 7. In other words, the encapsulating material 6 is provided such that it includes the irradiated area 8 (first area) and the surrounding adjacent area (second area). As a result, each thin-film transistor 7 is covered by the liquid crystal layer 5, and the liquid crystal layer 5 functions as a protective layer, suppressing the degradation of each thin-film transistor 7. In particular, when each semiconductor layer 12a etc. is formed using an organic semiconductor, degradation may occur due to exposure to air, but such degradation is suppressed by the protective effect of the liquid crystal layer 5. Note that the thin-film transistor 7 does not necessarily have to be made of an organic semiconductor. In that case, each thin-film transistor 7 may be placed outside the encapsulating material 6 and not covered by the liquid crystal layer 7.

[0064] (Second Embodiment) Figure 5 is a plan view showing the configuration of electrodes and wiring of the liquid crystal element of the second embodiment. Since the basic configuration of the liquid crystal element 100a of the second embodiment is the same as that of the liquid crystal element 100 of the first embodiment described above, the differences in configuration will be mainly explained below. Although the inter-pixel electrodes are omitted in this diagram, inter-pixel electrodes may be provided in the liquid crystal element 100a of the second embodiment in the same manner as in the liquid crystal element 100 of the first embodiment.

[0065] As shown in Figure 5, the liquid crystal element 100a of the second embodiment includes pixel electrodes 20a to 20j. The configuration and function of these pixel electrodes 20a to 20j are equivalent to those of the pixel electrodes 10a to 10j in the liquid crystal element 100 of the first embodiment. Each of the pixel electrodes 20a, 20c, 20e, and 20h is associated with one thin-film transistor 7a. Similar to the liquid crystal element 100 of the first embodiment, each thin-film transistor 7a is electrically connected to each of the pixel electrodes 20a, 20c, 20e, and 20h using wiring and underlay wiring. Similarly, each of the pixel electrodes 20b, 20d, 20f, 20g, 20i, and 20j is associated with one thin-film transistor 7b. Similar to the liquid crystal element 100 of the first embodiment, each thin-film transistor 7b is electrically connected to each of the pixel electrodes 20b, 20d, 20f, 20g, 20i, and 20j using wiring and underlay wiring.

[0066] In the liquid crystal element 100a of the second embodiment, three notches are provided on the lower side of the pixel electrode 20a in a plan view, and one or two thin-film transistors 7a are arranged in each notch. The irradiated region 8 is set to include each pixel electrode 20a to 20j and each thin-film transistor 7a, but does not include each thin-film transistor 7b. For this reason, thin-film transistors 7a included in the irradiated region 8 are thin-film transistors made of organic semiconductors that are less affected by light irradiation. On the other hand, thin-film transistors 7b not included in the irradiated region 8 are not affected by light irradiation, so they may be made of organic semiconductors or inorganic semiconductors.

[0067] Here, the irradiated area 8 includes a high-illumination area 8a where relatively high-intensity light (image-forming light) is irradiated, and a low-illumination area 8b where relatively low-intensity light is irradiated. As shown in Figure 5, in the liquid crystal element 100a of the second embodiment, the high-illumination area 8a is the area including the pixel electrodes 20b to 20i, and the low-illumination area 8b is the area including the pixel electrode 20a. Furthermore, the thin-film transistor 7a using an organic semiconductor is formed in the low-illumination area 8b. The thin-film transistor 7a connected to the pixel electrodes 20c, 20e, and 20h located in the high-illumination area 8a is formed in the low-illumination area 8b. For example, if the liquid crystal element 100a is incorporated into a vehicle light fixture as a type of lighting device (see the fourth embodiment), the high-illumination area 8a can be used to form a high beam that requires relatively high illuminance, and the low-illumination area 8b can be used to form a low beam that does not require relatively low illuminance. Furthermore, the thin-film transistor 7a included in the irradiated region 8 can be a thin-film transistor using an organic semiconductor, and the thin-film transistor 7b located outside the irradiated region 8 can be a transistor using an inorganic semiconductor.

[0068] Furthermore, in the liquid crystal element 100a of the second embodiment, the wiring 23d having a portion that functions as the gate electrode of each thin-film transistor 7a is included in the irradiated area 8 and is therefore formed using a transparent conductive film such as ITO. On the other hand, the wiring 23a that is not included in the irradiated area 8 and is connected to the wiring 23d, and the wirings 23b and 23c that are not included in the irradiated area 8 are formed using a metal film. This prevents heating of the wiring due to light irradiation in the wiring included in the irradiated area 8, and reduces the resistance of the wiring not included in the irradiated area 8 by using a metal film.

[0069] Furthermore, in the liquid crystal element 100a of the second embodiment, each wiring 21a, 21e, 21i, 21n, which has a portion that functions as the source / drain electrode of each thin-film transistor 7a, 7b, is provided with lower layer wirings 24a to 24j made of a metal film on the lower side of each wiring 21a, etc., via an insulating film 3. These lower layer wirings 24a, etc., can be formed simultaneously when forming the wirings 23a to 23c.

[0070] The lower layer wiring 24a is located between wiring 23d and wiring 23b, overlapping with wiring 21a in a plan view, and is physically and electrically connected to wiring 21a via two contact holes provided in the insulating film 3. Similarly, the lower layer wiring 24b is located between wiring 23b and wiring 23c, overlapping with wiring 21a in a plan view, and is physically and electrically connected to wiring 21a via two contact holes provided in the insulating film 3. Similarly, the lower layer wiring 24c is located below wiring 23c in the figure, overlapping with wiring 21a in a plan view, and is physically and electrically connected to wiring 21a via one contact hole provided in the insulating film 3. These lower layer wirings 24a to 24c contribute to reducing the resistance of wiring 21a.

[0071] Lower wirings 24d, 24e, and 24f are each provided on the lower side of wiring 21e. Lower wirings 24g, 24h, and 24i are each provided on the lower side of wiring 21i. Lower wiring 24j is provided on the lower side of wiring 21n. The specific method of providing these lower wirings 24d, etc., is the same as for the lower side 24a to 24c, so the explanation is omitted.

[0072] Although not shown in the diagram, the encapsulating material 6 may be provided in an area that includes all of the pixel electrodes 20a and the thin-film transistors 7a and 7b. Furthermore, if each thin-film transistor 7b is made of an inorganic semiconductor, these thin-film transistors 7b may be placed outside the encapsulating material 6.

[0073] Figures 6(A) to 6(F) illustrate a manufacturing method for forming thin-film transistors using a mixture of inorganic semiconductors and organic semiconductors. Here, as an example, a method is described in which an inverse coplanar thin-film transistor 7b is formed using an inorganic semiconductor, and an inverse staggered thin-film transistor 7a is formed using an organic semiconductor.

[0074] Wiring having portions that function as gate electrodes 201a and 201b is formed on one side of the substrate 200 (Figure 6(A)). Specifically, a metal film such as Ta, Mo, Cr, Al, or Cu, or a conductive film such as ITO is deposited and patterned. Known methods such as sputtering and plasma CVD can be used for film deposition. For patterning, known methods such as dry etching or wet etching can be used.

[0075] Next, an insulating film 202 is formed on one side of the substrate 200 so as to cover the wiring having portions that function as gate electrodes 201a and 201b (Figure 6(B)). For example, an inorganic insulating film such as an SiOx film or a SiNx film is deposited by sputtering or plasma CVD.

[0076] Next, a semiconductor layer 203 and a carrier injection layer 204 are formed on the upper surface of the insulating film 202 (Figure 6(C)). For example, an amorphous Si film is formed as the semiconductor layer 203. As shown in the figure, the semiconductor layer 203 and the carrier injection layer 204 are formed in a position that overlaps with the gate electrode 201b in a plan view.

[0077] Next, wiring is formed that has portions corresponding to the semiconductor layer 203 and the carrier injection layer 204, which will become the source / drain electrodes 205b (Figure 6(D)). The source / drain electrodes 205b are formed by partially removing the carrier injection layer 204 so that the semiconductor layer 203 is exposed. Specifically, for example, a metal film such as Cu, Al, or Mo, or a conductive film such as ITO is deposited and patterned. Known methods such as sputtering and plasma CVD can be used for film deposition. For patterning, for example, known dry etching or wet etching methods can be used.

[0078] Next, wiring is formed that has a portion corresponding to the gate electrode 201a, which will become the source / drain electrode 205a (Figure 6(D)). Here, wiring with the source / drain electrode 205a is formed using a transparent conductive film such as ITO. The known methods described above can be used for film deposition and patterning. The source / drain electrode 205b may also be formed using ITO, in which case the source / drain electrode 205a and source / drain electrode 205b can be formed simultaneously in this step.

[0079] Next, a passivation film 206 is formed so as to cover the semiconductor layer 203 and each source / drain electrode 205b (Figure 6(E)). For example, an inorganic insulating film such as an SiOx film or a SiNx film is formed as the passivation film 206 by a known method such as mask sputtering. Furthermore, a light-shielding film 207 made of a Cr film or carbon black may be provided above the passivation film 206 at a position that overlaps with the semiconductor layer 203 in a plan view.

[0080] Next, an organic semiconductor layer 208 is formed at a position that overlaps with the gate electrode 201a in a plan view, so as to be in contact with each source / drain electrode 205a (Figure 6(E)). For example, the material that will become the semiconductor layer 208 is applied using a droplet ejection method such as an inkjet method. Note that an alignment film may be patterned on one surface of the substrate 200 before this step.

[0081] By going through the above steps, a thin-film transistor 7a using an organic semiconductor and a thin-film transistor 7b using an inorganic semiconductor can be formed on a single substrate 200.

[0082] (Third embodiment) Figure 7 is a plan view showing the configuration of electrodes and wiring of the liquid crystal element of the third embodiment. Figures 8(A) and 8(B) are partial cross-sectional views showing the configuration of the first substrate of the liquid crystal element of the third embodiment. Figure 8(A) corresponds to the cross-section of the dd line shown in Figure 7, and Figure 8(B) corresponds to the cross-section of the ee line shown in Figure 7. The basic configuration of the liquid crystal element 100b of the third embodiment is the same as that of the liquid crystal element 100 of the first embodiment and the liquid crystal element 100a of the second embodiment described above. The main difference is that, as shown in Figure 8(A), etc., each pixel electrode 30a, etc., is provided on a layer above the wiring and lower layer wiring via the insulating layer 9. Detailed explanations of common components are omitted below. The layer on which each pixel electrode 30a, etc., is provided corresponds to the "third layer".

[0083] As shown in Figure 7, the liquid crystal element 100b of the third embodiment includes pixel electrodes 30a to 30j. The configuration and function of these pixel electrodes 30a to 30j are the same as those of the pixel electrodes 10a to 10j in the liquid crystal element 100 of the first embodiment. Also, similar to the second embodiment, in the irradiated area 8 of the liquid crystal element 100b of the third embodiment, an illuminance area 8a is set in the area including the pixel electrodes 30b to 30i, and a low-illuminance area 8b is set in the area including the pixel electrode 30a.

[0084] Each pixel electrode 30a, 30c, 30e, and 30h is associated with one thin-film transistor 7a. Similar to the liquid crystal element 100 of the first embodiment, each thin-film transistor 7a is electrically connected to each pixel electrode 30a, 30c, 30e, and 30h using wiring and underlay wiring. Similarly, each pixel electrode 30b, 30d, 30f, 30g, 30i, and 30j is associated with one thin-film transistor 7b. Similar to the liquid crystal element 100 of the first embodiment, each thin-film transistor 7b is electrically connected to each pixel electrode 30b, 30d, 30f, 30g, 30i, and 30j using wiring and underlay wiring. In this embodiment, each thin-film transistor 7a is located in a position that overlaps with the pixel electrode 30a. For this reason, each thin-film transistor 7a is constructed using an organic semiconductor. On the other hand, each thin-film transistor 7b located in a position that does not overlap with the pixel electrode may be constructed using either an organic semiconductor or an inorganic semiconductor.

[0085] As shown in Figure 8(A), each pixel electrode 30a, 30c, and 30e is located on the upper side of the insulating layer 9, which covers the insulating layer 3. The same applies to other pixel electrodes 30b, etc., which are not shown. The semiconductor layer 12p is located in a portion of the pixel electrode 30a that has been opened up. This semiconductor layer 12p, the portion that functions as the gate electrode of the wiring 23d provided on one side of the first substrate 1, and the wirings 21j and 21k on the upper side of the insulating layer 3 constitute one thin-film transistor 7a. This thin-film transistor 7a is connected to the pixel electrode 30e via the lower wiring 24m on one side of the first substrate 1 and the wiring 21m on one side of the insulating layer 3. The lower wiring 24m and the wiring 21m are connected via contact holes provided in the insulating layer 3. The pixel electrode 30e and the wiring 21m are connected via contact holes provided in the insulating layer 9. Furthermore, a portion of the 21m wiring is positioned to overlap the gap between the pixel electrode 30c and the pixel electrode 30e, thus functioning as an inter-pixel electrode.

[0086] Similarly, the pixel electrode 30d is connected to the thin-film transistor 7b via wirings 21d, 21n, and the lower layer wiring 24n (see Figure 8(B)). Similarly, a portion of wiring 21n is positioned to overlap the gap between the pixel electrodes 30d and 30f, functioning as an inter-pixel electrode. Although a detailed explanation is omitted, the pixel electrodes 30f, 30g, 30h, 30i, and 30j are also connected to either the thin-film transistor 7a or 7b via a similar configuration. On the other hand, the pixel electrodes 30a, 30b, and 30c are connected to either the thin-film transistor 7a or 7b via wirings provided on the upper layer of the insulating layer 3, without using the lower layer wiring.

[0087] As shown in Figure 8(B), each pixel electrode 30a, 30b, 30d, and 30f is located on the upper side of the insulating layer 9, which covers the insulating layer 3. The same applies to other pixel electrodes not shown. The semiconductor layer 12q is located in contact with the wiring 21a and 21d. This semiconductor layer 12q, the portion that functions as the gate electrode of the lower wiring 23c located on one side of the first substrate 1, and the upper wirings 21a and 21d of the insulating layer 3 constitute one thin-film transistor 7b. The lower wirings 23a and 23b are arranged to intersect with the wiring 21d, partially overlapping it in a plan view. The arrangement relationship between these lower wirings 23a and 23b and the respective wirings 21h and 21i is similar. Furthermore, the insulating layer 9 is not provided in the portion that constitutes the thin-film transistor 7b.

[0088] In this way, by overlapping some of the pixel electrodes and thin-film transistors in a planar view, the overall size of the liquid crystal element 100b can be made more compact while securing the area of ​​the pixel electrodes. Furthermore, for example, an auxiliary electrode electrically connected to either the pixel electrode 30a or 30c may be formed on the insulating film 3 on the lower wiring 24m, which is the routing line for the gate electrode, so as to overlap the gap between the pixel electrodes 30a and 30c, which are located between the thin-film transistor 7a connected to the pixel electrode 30e. Alternatively, for example, an auxiliary electrode electrically connected to either the pixel electrode 30a or 30b may be formed on the insulating film 3 on the lower wiring 24n, which is the routing line for the drain electrode, so as to overlap the gap between the pixel electrodes 30a and 30b, and the gap between the pixel electrodes 30b and 30f, which are located between the thin-film transistor 7b connected to the pixel electrode 30d. The lower layer wiring 24m is a drain electrode connected to the pixel electrode 30e, and in the gap between the pixel electrodes 30a and 30c, the voltage applied to the lower layer wiring 24m is applied to the liquid crystal layer via the insulating film 3 and insulating film 9, which can be observed as a malfunction between the electrodes. Similarly, the lower layer wiring 24n is a drain electrode connected to the pixel electrode 30d, and in the gap between the pixel electrodes 30a and 30c, the voltage applied to the lower layer wiring 24n is applied to the liquid crystal layer via the insulating film 3 and insulating film 9, which can be observed as a malfunction between the electrodes. To prevent this malfunction, it is desirable to form the auxiliary electrodes in the gap between the pixel electrodes. Here, the case of a drain electrode as the lower layer wiring routed in the gap between the pixel electrodes has been described, but in this disclosure, the lower layer wiring routed in the gap between the pixel electrodes may also be a gate electrode or a source electrode. In that case as well, the malfunction can be prevented by forming auxiliary electrodes in the gap between the pixel electrodes.

[0089] (Fourth Embodiment) Figure 9(A) is a diagram showing the configuration of a vehicle lighting system of one embodiment, which is constructed using the liquid crystal element of the embodiment described above. The vehicle lighting system shown in Figure 9(A) consists of a vehicle lighting device (lighting device) 301, a controller 302, and a camera 303. This vehicle headlight system detects the positions of vehicles ahead and pedestrian faces, etc., around the vehicle based on images of the area around the vehicle captured by the camera 303, sets a certain range including the position of the vehicle ahead, etc., as a dimming range (or non-illumination range), and sets the other range as a light illumination range to perform selective light illumination, and also illuminates the road surface with light of various shapes.

[0090] The vehicle light fixture 301 is positioned, for example, at a predetermined location on the front of the vehicle and emits light to illuminate the area in front of the vehicle. Although one vehicle light fixture 301 is provided on each side of the vehicle, only one is shown in this illustration.

[0091] The controller 302 controls the operation of the light source 310 and liquid crystal element 315 of the vehicle lighting fixture 301. This controller 302 is realized by using a computer system having, for example, a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), etc., and executing a predetermined operation program in this computer system. In this embodiment, the controller 302 lights up the light source 310 according to the operation state of a light switch (not shown) installed in the driver's seat, and sets a light distribution pattern according to objects detected by the camera 303, such as vehicles ahead (oncoming vehicles, preceding vehicles), pedestrians, road signs, and road markings, and supplies a control signal to the liquid crystal element 315 to form an image corresponding to this light distribution pattern.

[0092] Camera 303 captures the space in front of the vehicle and generates an image. It then performs a predetermined image recognition process on this image to detect the position, range, size, type, etc., of the target object, such as the vehicle in front. The detection results from the image recognition process are supplied to the controller 302, which is connected to camera 303. Camera 303 is installed in a predetermined location inside the vehicle's interior (for example, on the top of the windshield) or in a predetermined location outside the vehicle's interior (for example, inside the front bumper). If the vehicle is equipped with cameras for other purposes (for example, an automatic braking system), those cameras may be shared.

[0093] Alternatively, the image recognition processing function in camera 303 may be replaced by controller 302. In this case, camera 303 outputs the generated image to controller 302, and image recognition processing is performed on the controller 302 side based on this image. Alternatively, both the image and the result of the image recognition processing based on it may be supplied to controller 302 from camera 303. In this case, controller 302 may perform its own image recognition processing using the image obtained from camera 303.

[0094] The vehicle lighting fixture 301 shown in Figure 9(A) comprises a light source 310, reflectors 311 and 313, a polarizing beam splitter (first polarizing element) 312, a quarter-wave plate 314, a liquid crystal element 315, an optical compensation plate 316, a polarizing plate (second polarizing element) 317, and a projection lens 318. Each of these elements is housed and integrated in, for example, a single housing. The light source 310 and the liquid crystal element 315 are connected to a controller 302, respectively.

[0095] The light source 310 includes a drive circuit and emits light under the control of the controller 302. Similar to the verification light source described above, this light source 310 is a white LED equipped with a blue LED and a yellow phosphor positioned where the light emitted from the blue LED enters. The blue LED excites the yellow phosphor, and white light is obtained by mixing blue and yellow light.

[0096] The reflector 311 is positioned in correspondence with the light source 310, and reflects and focuses the light emitted from the light source 310 so that it focuses at the position of the liquid crystal element 315 (for example, approximately in the center in the thickness direction of the liquid crystal element 315) to form a polarizing beam splitter. 3 The light is guided in 12 directions and incident on the liquid crystal element 315. The reflector 311 is, for example, a reflecting mirror having an ellipsoidal reflective surface. In this case, the light source 310 can be positioned near the focal point of the reflecting surface of the reflector 311. Alternatively, a lens may be used as the light-gathering unit instead of the reflector 311.

[0097] Polarizing beam splitter 3 12 is a transmissive-reflective polarizing element that transmits polarization in a specific direction of incident light and reflects polarization in a direction perpendicular to it, and is positioned obliquely to the light incident surface on the light incident surface side of the liquid crystal element 315. Such a polarizing beam splitter 3 For example, a wire grid polarizing element or a multilayer polarizing element can be used as element 12.

[0098] Reflector 313 is a polarizing beam splitter. 3 It is positioned where light reflected by 12 can be incident, and the incident light is reflected and focused so that it focuses at the position of the liquid crystal element 315 to form a polarizing beam splitter. 3 Direct the beam into 12.

[0099] The quarter-wave plate 314 is a polarizing beam splitter. 3 It is positioned on the optical path between 12 and reflector 313 and gives a phase difference to the incident light. In this embodiment, a polarizing beam splitter 3 The light reflected by 12 passes through the quarter-wave plate 314, is reflected by the reflector 313, and passes through the quarter-wave plate 314 again, causing its polarization direction to rotate by 90° before being re-incident to the polarizing beam splitter 312. As a result, the re-incident light is in a state that allows it to pass through the polarizing beam splitter 312 more easily, improving the efficiency of light utilization.

[0100] Furthermore, as shown in the modified vehicle lighting device 301a in Figure 9(B), a half-wave plate 314a can be used instead of a quarter-wave plate 314. In this case, the half-wave plate 314a is a polarizing beam splitter. 3 The light reflected by 12 does not enter the field, and this light is positioned where the light reflected by reflector 313 enters.

[0101] The liquid crystal element 315 is positioned at a location that includes the focal point of the light reflected and focused by the reflectors 311 and 313, respectively, and is positioned so that the light is incident on it. The liquid crystal element 315 has a plurality of pixel sections (light modulation sections) that can be controlled independently of each other. In this embodiment, the liquid crystal element 315 has a driver (not shown) for supplying a drive voltage to each pixel section. Based on a control signal supplied from the controller 302, the driver supplies a drive voltage to the liquid crystal element 315 to individually drive each pixel section. As shown in the figure, the light incident on the liquid crystal element 315 is incident at a wide angle to the light incident surface of the liquid crystal element 315. Specifically, the light is incident at a wide angle of about 40° to 60° with respect to the normal direction of the light incident surface.

[0102] The optical compensation plate 316 compensates for the phase difference of light transmitted through the liquid crystal element 315 and increases the degree of polarization, and is positioned on the light-emitting side of the liquid crystal element 315. Specifically, the phase difference of the optical compensation plate 316 is set so that the phase difference, when added to the phase difference of the liquid crystal layer 315, is 0 or close to 0. Note that the optical compensation plate 316 may be omitted.

[0103] The polarizing plate 317 is positioned on the light-emitting side of the liquid crystal element 315. The polarizing beam splitter 12, the polarizing plate 317, and the liquid crystal element 315 positioned between them form an image corresponding to the light distribution pattern of the light irradiated in front of the vehicle. The transmission axis of the polarizing plate 317 is positioned to be approximately perpendicular to the transmission axis of the polarizing beam splitter 312. Furthermore, the transmission axes of the polarizing plate 317 and the polarizing beam splitter 312 are positioned to form an angle of approximately 45° in a plan view with respect to the orientation direction when no voltage is applied, approximately at the center of the liquid crystal layer thickness direction of the liquid crystal element 315.

[0104] The projection lens 318 is positioned so that light reflected and focused by the reflectors 311 and 313 and transmitted through the liquid crystal element 315 can enter it, and projects this incident light forward of the vehicle. The projection lens 318 is positioned so that its focal point is on the liquid crystal layer of the liquid crystal element 315. The optical axis of the projection lens 318 is aligned in the left-right direction in the figure, as shown by the dashed line.

[0105] (Example of modification) This disclosure is not limited to the embodiments described above, and can be implemented in various modified forms within the scope of the gist of this disclosure. For example, in the embodiments described above, a vehicle light was given as an example of a lighting device using liquid crystal elements, but the lighting device is not limited to this. Also, in the embodiments described above, a thin-film transistor was described as an example of a thin-film switching element, but a thin-film switching element such as a MIM (Metal Insulator Metal) element may be used instead of a thin-film transistor. Furthermore, the operating mode (orientation mode) of the liquid crystal layer is not limited to the vertical orientation mode described above.

[0106] This disclosure has the following features:

[0107] (Note 1) A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the aforementioned pixel electrodes is located within the first region to which image-forming light is irradiated. Each of the thin-film switching elements is located in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. Liquid crystal element. (Note 2) A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the thin-film switching elements comprises a plurality of first thin-film switching elements and a plurality of second thin-film switching elements, and at least each of the first thin-film switching elements is constructed using an organic semiconductor. Each of the pixel electrodes and each of the first Thin film All switching elements are located within the first region to which image-forming light is irradiated. Each of the second thin-film switching elements is located in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. Liquid crystal element. (Note 3) Each of the first thin-film switching elements is positioned in a notch provided in at least one of the pixel electrodes, and is positioned so as not to overlap with any of the pixel electrodes in a plan view. The liquid crystal element described in Appendix 2. (Note 4) Each of the first thin-film switching elements is positioned so as to overlap with at least one of the pixel electrodes in a plan view. The liquid crystal element described in Appendix 2. (Note 5) A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one side of the first substrate. Each of the third wirings and each of the pixel electrodes are arranged on the first substrate side in the second layer, which is relatively far from one side of the first substrate. An insulating layer is provided between the first layer and the second layer. A liquid crystal element as described in any of the appendices 1 to 3. (Note 6) A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, Inlet and Outlet of each thin film switching element Power Multiple third wirings, including a portion that functions as a pole, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one side of the first substrate. Each of the third wirings is located on the first substrate side in a second layer that is relatively further from one side of the first substrate than the first layer. Each of the aforementioned pixel electrodes is arranged on the first substrate side in a third layer that is relatively further from one surface of the first substrate than the second layer. An insulating layer is provided between the first layer and the second layer, and between each of the first layer and the second layer. Liquid crystal element as described in Appendix 2 or 4. (Note 7) The material further includes a sealing material provided between the first substrate and the second substrate, surrounding the liquid crystal layer. The sealing material is arranged to encompass the first region and the second region. A liquid crystal element as described in any of the appendices 1 to 6. (Note 8) The first region has a high-illumination region where the image-forming light of relatively high intensity is irradiated and a low-illumination region where the image-forming light of relatively low intensity is irradiated. Each Pre1 Thin film The switching elements are all located in the low-light region. A liquid crystal element as described in any of the appendices 2-4 or 6. (Note 9) A liquid crystal element as described in any of the appendices 1 to 8, Light source and A light-collecting unit that collects the light emitted from the light source to form the image-forming light and directs the image-forming light onto the liquid crystal element, A pair of polarizing elements are arranged opposite each other with the liquid crystal element in between, A lens that projects light transmitted through the liquid crystal element, Lighting devices, including... (Note 10) A vehicle lighting fixture configured using the lighting device described in Appendix 9, A sensor that detects objects present around the vehicle, A controller that controls the operation of the liquid crystal element according to the state of the object detected by the sensor, Vehicle lighting systems, including those mentioned above. [Explanation of Symbols]

[0108] 1: First substrate, 2: Second substrate, 3: Insulating layer, 4: Counter electrode, 5: Liquid crystal layer, 6: Encapsulating material, 7: Thin-film transistor, 8: Irradiated area, 10a~10j: Pixel electrode, 11a~11p: Wiring, 12a~12j: Semiconductor layer, 13a~13c: Lower layer wiring, 14a~14i: Lower layer wiring, 15a~15h: Inter-pixel electrode, 100: Liquid crystal element

Claims

1. A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the aforementioned pixel electrodes is located within the first region to which image-forming light is irradiated. Each of the thin-film switching elements is arranged in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one surface of the first substrate. Each of the third wirings and each of the pixel electrodes are arranged on the first substrate side in the second layer, which is relatively far from one surface of the first substrate. An insulating layer is provided between the first layer and the second layer. Liquid crystal element.

2. A first substrate and a second substrate are arranged with one side of each facing the other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the thin-film switching elements comprises a plurality of first thin-film switching elements and a plurality of second thin-film switching elements, and at least each of the first thin-film switching elements is constructed using an organic semiconductor. Each of the aforementioned pixel electrodes and each of the aforementioned first thin-film switching elements are all located within the first region to which image-forming light is irradiated. Each of the second thin-film switching elements is positioned in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one surface of the first substrate. Each of the third wirings and each of the pixel electrodes are arranged on the first substrate side in the second layer, which is relatively far from one surface of the first substrate. An insulating layer is provided between the first layer and the second layer. Liquid crystal element.

3. A first substrate and a second substrate arranged with one side facing each other, A liquid crystal layer disposed between the first substrate and the second substrate, A transparent conductive film is used to provide a plurality of pixel electrodes on the first substrate side, including those with different planar shapes, A plurality of thin-film switching elements are provided on the first substrate side, and one is associated with each of the pixel electrodes, A transparent conductive film is provided on the first substrate side, and a plurality of first wirings connect each of the pixel electrodes and each of the thin-film switching elements, A counter electrode is provided on the second substrate side and is arranged to overlap each of the pixel electrodes in a plan view, Includes, Each of the thin-film switching elements comprises a plurality of first thin-film switching elements and a plurality of second thin-film switching elements, and at least each of the first thin-film switching elements is constructed using an organic semiconductor. Each of the aforementioned pixel electrodes and each of the aforementioned first thin-film switching elements are all located within the first region to which image-forming light is irradiated. Each of the second thin-film switching elements is positioned in a second region adjacent to the first region in a plan view, which is not irradiated by the image-forming light. A plurality of second wirings including a portion that functions as a control electrode for each of the thin-film switching elements, A plurality of third wirings including a portion that functions as an input / output electrode for each of the thin-film switching elements, It further includes, Each of the first wirings and each of the second wirings are arranged on the first substrate side in the first layer, which is relatively close to one surface of the first substrate. Each of the third wirings is arranged on the first substrate side in a second layer that is relatively further from one side of the first substrate than the first layer. Each of the aforementioned pixel electrodes is arranged on the first substrate side in a third layer that is relatively further from one surface of the first substrate than the second layer. An insulating layer is provided between the first layer and the second layer, and between the second layer and the third layer. Liquid crystal element.

4. Each of the first thin-film switching elements is positioned in a notch provided in at least one of the pixel electrodes, and is positioned so as not to overlap with any of the pixel electrodes in a plan view. The liquid crystal element according to claim 2.

5. Each of the first thin-film switching elements is positioned so as to overlap with at least one of the pixel electrodes in a plan view. The liquid crystal element according to claim 2.

6. The material further includes a sealing material provided between the first substrate and the second substrate, surrounding the liquid crystal layer. The sealing material is arranged to encompass the first region and the second region. The liquid crystal element according to claim 1 or 2.

7. The first region has a high-illumination region where the image-forming light of relatively high intensity is irradiated and a low-illumination region where the image-forming light of relatively low intensity is irradiated. Each of the first thin-film switching elements is located entirely within the low-light region. The liquid crystal element according to claim 2.

8. A liquid crystal element according to any one of claims 1 to 3, Light source and A light-collecting unit that collects the light emitted from the light source to form the image-forming light and directs the image-forming light onto the liquid crystal element, A pair of polarizing elements are arranged opposite each other with the liquid crystal element in between, A lens that projects light transmitted through the liquid crystal element, Lighting devices, including...

9. A vehicle light fixture configured using the lighting device described in claim 8, A sensor that detects objects present around the vehicle, A controller that controls the operation of the liquid crystal element according to the state of the object detected by the sensor, Vehicle lighting systems, including those mentioned above.

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