Exposure apparatus and control device

Abstract

To realize highly accurate exposure with high throughput.SOLUTION: An exposure apparatus includes: a substrate holder for holding a substrate; a spatial light modulator having a plurality of light modulation elements; and a control device for moving the substrate holder, where the control device carries out exposure of a second range including a range overlapping a first range and a range not overlapping the first range by reducing or not reducing a part of a spot of light ejected from each of the light modulating elements for irradiating the first range of the substrate, and adding a spot to a place adjacent to the first range.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] Relates to an exposure apparatus and a control apparatus.

Background Art

[0002] Conventionally, in a lithography process for manufacturing electronic devices (micro-devices) such as display panels using liquid crystals or organic ELs, semiconductor elements (integrated circuits, etc.), a projection exposure apparatus of a step-and-repeat method (so-called stepper), or a projection exposure apparatus of a step-and-scan method (so-called scanning stepper (also called scanner)) has been used. In this type of exposure apparatus, a mask pattern for an electronic device is projection-exposed onto a photosensitive layer applied to the surface of an exposed substrate (hereinafter, also simply referred to as a substrate) such as a glass substrate, a semiconductor wafer, a printed wiring board, or a resin film.

[0003] Since it takes time and cost to fabricate a mask substrate on which the mask pattern is fixedly formed, instead of the mask substrate, an exposure apparatus using a spatial light modulator (variable mask pattern generator) such as a digital micromirror device (DMD) in which a large number of micro-mirrors that are slightly displaced are regularly arranged is known (for example, see Patent Document 1). In the exposure apparatus disclosed in Patent Document 1, for example, illumination light obtained by mixing light from a laser diode (LD) with a wavelength of 375 nm and light from an LD with a wavelength of 405 nm using a multi-mode fiber bundle is irradiated onto a digital micromirror device (DMD), and the reflected light from each of a large number of micro-mirrors whose tilt is controlled is projection-exposed onto a substrate through an imaging optical system and a microlens array.

[0004] In an exposure apparatus, it is desired to achieve highly accurate exposure with high throughput.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] According to the embodiments of the disclosure, the exposure apparatus includes a substrate holder for holding a substrate, a spatial light modulator having a plurality of light modulation elements, and a control device for moving the substrate holder, wherein the control device exposes a second range including a range that overlaps with the first range and a range that does not overlap with the first range by reducing or not reducing a portion of the light spots emitted from each of the light modulation elements that irradiate a first range of the substrate, and by adding spots to locations adjacent to the first range.

[0007] Furthermore, the configuration of the embodiments described later may be modified as appropriate, and at least a part of it may be replaced with other components. Moreover, the configuration elements whose arrangement is not particularly limited may be arranged in positions that can achieve their function, not limited to the arrangement disclosed in the embodiments. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a perspective view showing an overview of the external configuration of an exposure apparatus according to one embodiment. [Figure 2] Figure 2 shows an example of the arrangement of the projection areas of the DMD projected onto the substrate by each projection unit of multiple exposure modules. [Figure 3] Figure 3 illustrates the state of sequential exposure in Figure 2, using each of the four specific projection regions. [Figure 4] Figure 4 is an optical arrangement diagram showing the specific configuration of two exposure modules aligned in the X direction (scanning exposure direction) as viewed in the XZ plane. [Figure 5] Figure 5(a) is a schematic diagram of the DMD, Figure 5(b) is a diagram of the DMD when the power is OFF, Figure 5(c) is a diagram to explain the mirror in the ON state, and Figure 5(d) is a diagram to explain the mirror in the OFF state. [Figure 6] Figure 6 is a functional block diagram showing the functional configuration of the exposure control device included in the exposure apparatus. [Figure 7] Figure 7 schematically shows the projection area (group of light-irradiated areas) and the exposure target area on the substrate (the area where the line pattern is exposed). [Figure 8] Figure 8 shows a rectangular area, which is part of a linear exposure target area, and a projection area (group of light-irradiated areas). [Figure 9] Figures 9(a) to 9(c) illustrate an example where the spot positions are arranged in a square pattern within a rectangular area. [Figure 10] Figures 10(a) to 10(c) illustrate an example where the spot positions are arranged in a staggered pattern within a rectangular area. [Figure 11] Figure 11 is a table showing examples of spot position arrangements in staggered exposure. [Figure 12] Figure 12 is a diagram illustrating staggered exposure at the joint. [Figure 13] Figure 13 illustrates an example where exposure is shared by two DMDs at the joint. [Figure 14] Figures 14(a) to 14(k) are diagrams illustrating the position correction of line patterns. [Figure 15] Figure 15 is a graph showing the position measurement results when the position of the line pattern was corrected using the methods shown in Figures 14(a) to 14(k). [Figure 16] Figures 16(a) to 16(k) are diagrams (part 1) illustrating the adjustment of line width in line patterns. [Figure 17] Figures 17(a) to 17(l) are diagrams (part 2) illustrating the adjustment of line width in line patterns. [Figure 18] Figure 18 is a graph showing the line width measurement results when the line width of the line pattern was adjusted using the methods shown in Figures 16(a) to 17(l). [Figure 19] Figures 19(a) to 19(g) are diagrams illustrating the correction based on the distortion measurement results. [Figure 20]Figs. 20(a) to 20(g) are diagrams for explaining correction based on the measurement results of the illuminance distribution.

Embodiments for Carrying Out the Invention

[0009] A pattern exposure apparatus (hereinafter simply referred to as an exposure apparatus) according to an embodiment will be described with reference to the drawings.

[0010] 〔Overall Configuration of Exposure Apparatus〕 Fig. 1 is a perspective view showing an outline of the external configuration of an exposure apparatus EX according to an embodiment. The exposure apparatus EX is an apparatus that forms and projects an exposure light whose intensity distribution in space is dynamically modulated by a spatial light modulator (SLM: Spatial Light Modulator) onto a substrate to be exposed. Examples of the spatial light modulator include a liquid crystal element, a digital micromirror device (DMD: Digital Micromirror Device), a magneto-optic spatial light modulator (MOSLM), and the like. The exposure apparatus EX according to the present embodiment includes a DMD 10 as the spatial light modulator, but may include other spatial light modulators.

[0011] In a specific embodiment, the exposure apparatus EX is a step-and-scan type projection exposure apparatus (scanner) that uses a rectangular (square) glass substrate used in a display device (flat panel display) or the like as an object to be exposed. The glass substrate is a substrate P for a flat panel display having a length of at least one side or a diagonal length of 500 mm or more and a thickness of 1 mm or less. The exposure apparatus EX exposes a projected image of a pattern formed by the DMD onto a photosensitive layer (photoresist) formed on the surface of the substrate P with a certain thickness. The substrate P carried out from the exposure apparatus EX after exposure is sent to a predetermined process step (film forming step, etching step, plating step, etc.) after the development step.

[0012] The exposure apparatus EX includes a pedestal 2 placed on active vibration isolation units 1a, 1b, 1c, 1d (1d not shown), a surface plate 3 placed on the pedestal 2, an XY stage 4A that can move two-dimensionally on the surface plate 3, a substrate holder 4B that adsorbs and holds a substrate P on the XY stage 4A in a plane, and laser length measuring interferometers (hereinafter also simply referred to as interferometers) IFX, IFY1 to IFY4 that measure the two-dimensional movement positions of the substrate holder 4B (substrate P). Such a stage apparatus is disclosed, for example, in U.S. Patent Publication No. 2010 / 0018950 and U.S. Patent Publication No. 2012 / 0057140.

[0013] In FIG. 1, the XY plane of the orthogonal coordinate system XYZ is set parallel to the flat surface of the surface plate 3 of the stage apparatus, and the XY stage 4A is set to be able to translate within the XY plane. Also, in the present embodiment, the direction parallel to the X-axis of the coordinate system XYZ is set as the scanning movement direction of the substrate P (XY stage 4A) during scanning exposure. The movement position of the substrate P in the X-axis direction is sequentially measured by the interferometer IFX, and the movement position in the Y-axis direction is sequentially measured by at least one (preferably two or more) of the four interferometers IFY1 to IFY4. The substrate holder 4B is configured to be slightly movable in the direction of the Z-axis perpendicular to the XY plane and slightly tiltable in an arbitrary direction with respect to the XY plane with respect to the XY stage 4A, and active focus adjustment and leveling (parallelism) adjustment between the surface of the substrate P and the imaging surface of the projected pattern are performed. Further, the substrate holder 4B is configured to be slightly rotatable (θz rotation) around an axis parallel to the Z-axis in order to actively adjust the inclination of the substrate P within the XY plane.

[0014] The exposure apparatus EX further comprises an optical platen 5 that holds multiple exposure (drawing) modules MU(A), MU(B), and MU(C), and main columns 6a, 6b, 6c, and 6d (6d is not shown) that support the optical platen 5 from the pedestal 2. Each of the multiple exposure modules MU(A), MU(B), and MU(C) is mounted on the +Z side of the optical platen 5. Note that each of the multiple exposure modules MU(A), MU(B), and MU(C) may be mounted individually on the optical platen 5, or they may be mounted on the optical platen 5 in a state where rigidity is increased by connecting two or more exposure modules to each other. Each of the multiple exposure modules MU(A), MU(B), and MU(C) is mounted on the +Z side of the optical platen 5 and has an illumination unit ILU that receives illumination light from an optical fiber unit FBU, and a projection unit PLU that is mounted on the -Z side of the optical platen 5 and has an optical axis parallel to the Z axis. Furthermore, each of the exposure modules MU(A), MU(B), and MU(C) is equipped with a DMD10, which acts as a light modulation unit that reflects illumination light from the illumination unit ILU in the -Z direction and directs it into the projection unit PLU. The detailed configuration of the exposure module, consisting of the illumination unit ILU, DMD10, and projection unit PLU, will be described later.

[0015] Multiple alignment systems (microscopes) ALG are mounted on the -Z side of the optical table 5 of the exposure apparatus EX to detect alignment marks formed at predetermined positions on the substrate P. A calibration reference section CU for calibration is provided at the -X end of the substrate holder 4B. Calibration includes at least one of the following: confirmation (calibration) of the relative positional relationship of each detection field of each alignment system ALG in the XY plane; confirmation (calibration) of the baseline error between each projection position of the pattern image projected from each projection unit PLU of the exposure modules MU(A), MU(B), and MU(C) and the position of each detection field of the alignment system ALG; and confirmation of the position and image quality of the pattern image projected from the projection unit PLU. In this embodiment, although some parts are not shown in Figure 1, each of the exposure modules MU(A), MU(B), and MU(C) consists of nine modules arranged at regular intervals in the Y direction, but the number of modules may be less than or more than nine. Furthermore, although Figure 1 shows three rows of exposure modules arranged in the X-axis direction, the number of rows of exposure modules arranged in the X-axis direction may be two or fewer, or four or more.

[0016] Figure 2 shows an example of the arrangement of the projection regions IAn of the DMD 10 projected onto the substrate P by the projection units PLU of each exposure module MU(A), MU(B), and MU(C), with the Cartesian coordinate system XYZ set to the same as in Figure 1. The projection region IAn can be described as the irradiation range (group of light irradiation regions) of illumination light reflected by the multiple micromirrors 10a of the DMD 10 and guided onto the substrate P by the projection unit PLU. In this embodiment, each of the exposure modules MU(A) in the first row, MU(B) in the second row, and MU(C) in the third row, which are spaced apart in the X direction, consists of nine modules arranged in the Y direction. Exposure module MU(A) consists of nine modules MU1 to MU9 arranged in the +Y direction, exposure module MU(B) consists of nine modules MU10 to MU18 arranged in the -Y direction, and exposure module MU(C) consists of nine modules MU19 to MU27 arranged in the +Y direction. Modules MU1 to MU27 all have the same configuration. When exposure module MU(A) and exposure module MU(B) are facing each other in the X direction, exposure module MU(B) and exposure module MU(C) are back-to-back in the X direction.

[0017] In Figure 2, the shape of the projection regions IA1, IA2, IA3, ..., IA27 (sometimes referred to as IAn, where n is 1 to 27) of modules MU1 to MU27 is, as an example, a rectangle extending in the Y direction with an aspect ratio of approximately 1:2. In this embodiment, as the substrate P is scanned in the +X direction, sequential exposure is performed at the -Y direction edges of each of the projection regions IA1 to IA9 in the first row and at the +Y direction edges of each of the projection regions IA10 to IA18 in the second row. Then, the areas on the substrate P that were not exposed by the projection regions IA1 to IA18 in the first and second rows are sequentially exposed by the projection regions IA19 to IA27 in the third row. The center points of each projection region IA1 to IA9 in the first row lie on line k1 parallel to the Y axis, the center points of each projection region IA10 to IA18 in the second row lie on line k2 parallel to the Y axis, and the center points of each projection region IA19 to IA27 in the third row lie on line k3 parallel to the Y axis. The distance in the X direction between line k1 and line k2 is set to distance XL1, and the distance in the X direction between line k2 and line k3 is set to distance XL2.

[0018] Here, let OLa be the joint between the -Y end of projection region IA9 and the +Y end of projection region IA10, OLb be the joint between the -Y end of projection region IA10 and the +Y end of projection region IA27, and OLc be the joint between the +Y end of projection region IA8 and the -Y end of projection region IA27. The state of this joint exposure is explained in Figure 3. In Figure 3, the Cartesian coordinate system XYZ is set to be the same as in Figures 1 and 2, and the coordinate system X'Y' within projection regions IA8, IA9, IA10, IA27 (and all other projection regions IAn) is set to be tilted by an angle θk (0° < θk < 90°) with respect to the X and Y axes (lines k1 ~ k3) of the Cartesian coordinate system XYZ. That is, the areas on the substrate P onto which the illumination light reflected by the numerous micromirrors of the DMD10 is projected (light irradiation areas) are arranged in two dimensions along the X' and Y' axes.

[0019] The circular regions in Figure 3 that encompass each of the projection regions IA8, IA9, IA10, IA27 (and all other projection regions IAn) represent the circular image field PLf' of the projection unit PLU. At the joint OLa, the projection image (light-illuminated region) of the micromirrors arranged diagonally (angle θk) at the -Y' end of projection region IA9 is set to overlap with the projection image (light-illuminated region) of the micromirrors arranged diagonally (angle θk) at the +Y' end of projection region IA10. Similarly, at the joint OLb, the projection image (light-illuminated region) of the micromirrors arranged diagonally (angle θk) at the -Y' end of projection region IA10 is set to overlap with the projection image (light-illuminated region) of the micromirrors arranged diagonally (angle θk) at the +Y' end of projection region IA27. Similarly, in the joint OLc, the projection images (light-illuminated areas) of the micromirrors arranged diagonally (angle θk) at the +Y' end of projection region IA8 and the projection images (light-illuminated areas) of the micromirrors arranged diagonally (angle θk) at the -Y' end of projection region IA27 are set to overlap.

[0020] [Lighting unit configuration] Figure 4 is an optical arrangement diagram of module MU18 in exposure module MU(B) and module MU19 in exposure module MU(C), as seen in the XZ plane, as shown in Figures 1 and 2. The Cartesian coordinate system XYZ in Figure 4 is set to the same as the Cartesian coordinate system XYZ in Figures 1 to 3. Also, as is clear from the arrangement of each module in the XY plane shown in Figure 2, module MU18 is offset from module MU19 by a certain distance in the +Y direction and is installed back to back with module MU19. Since each optical component in module MU18 and each optical component in module MU19 are made of the same material and constructed in the same way, the optical configuration of module MU18 will be described in detail here. Note that the optical fiber unit FBU shown in Figure 1 consists of 27 optical fiber bundles FB1 to FB27, corresponding to each of the 27 modules MU1 to MU27 shown in Figure 2.

[0021] The illumination unit ILU of module MU18 consists of a mirror 100 that reflects illumination light ILm traveling in the -Z direction from the exit end of the optical fiber bundle FB18, a mirror 102 that reflects the illumination light ILm from mirror 100 in the -Z direction, an input lens system 104 that acts as a collimator lens, an illuminance adjustment filter 106, an optical integrator 108 including a micro-fly-eye (MFE) lens and a field lens, a condenser lens system 110, and an inclined mirror 112 that reflects the illumination light ILm from the condenser lens system 110 toward the DMD10. Mirrors 102, input lens system 104, optical integrator 108, condenser lens system 110, and inclined mirror 112 are arranged along the optical axis AXc parallel to the Z axis.

[0022] The optical fiber bundle FB18 is composed of one optical fiber or multiple optical fiber bundles. The illumination light ILm emitted from the output end of the optical fiber bundle FB18 (each optical fiber) is set to a numerical aperture (NA, also called divergence angle) such that it is incident without being vetoed by the subsequent input lens system 104. The position of the front focal point of the input lens system 104 is set in the design to be the same as the position of the output end of the optical fiber bundle FB18. Furthermore, the position of the rear focal point of the input lens system 104 is set so that the illumination light ILm from one or more point sources formed at the output end of the optical fiber bundle FB18 is superimposed on the incident surface side of the MFE lens 108A of the optical integrator 108. Therefore, the incident surface of the MFE lens 108A is Köhler-illuminated by the illumination light ILm from the output end of the optical fiber bundle FB18. Initially, the geometric center point of the exit end of the optical fiber bundle FB18 in the XY plane is located on the optical axis AXc, and the principal ray (center line) of the illumination light ILm from the point light source at the exit end of the optical fiber is parallel (or coaxial) with the optical axis AXc.

[0023] The illumination light ILm from the input lens system 104 is attenuated by the illuminance adjustment filter 106 to an arbitrary value in the range of 0% to 90%, and then passes through the optical integrator 108 (MFE lens 108A, field lens, etc.) before entering the condenser lens system 110. The MFE lens 108A is made up of a large number of rectangular microlenses with a square area of ​​several tens of micrometers arranged in two dimensions, and its overall shape is set to be approximately similar to the overall shape of the mirror surface of the DMD 10 (aspect ratio of approximately 1:2) in the XY plane. In addition, the position of the front focal point of the condenser lens system 110 is set to be approximately the same as the position of the emission surface of the MFE lens 108A. As a result, each of the illumination lights from the point light sources formed on each emission side of the numerous microlenses of the MFE lens 108A is converted into approximately parallel luminous beams by the condenser lens system 110, reflected by the inclined mirror 112, and then superimposed on the DMD 10 to create a uniform illuminance distribution. Since the emission surface of the MFE lens 108A generates a surface light source in which numerous point light sources (focusing points) are densely arranged in two dimensions, it functions as a surface light source component.

[0024] In the module MU18 shown in Figure 4, the optical axis AXc, which passes through the condenser lens system 110 and is parallel to the Z-axis, is bent by the inclined mirror 112 to reach the DMD10, and the optical axis between the inclined mirror 112 and the DMD10 is defined as optical axis AXb. In this embodiment, the neutral plane containing the center points of each of the numerous micromirrors of the DMD10 is set parallel to the XY plane. Therefore, the angle between the normal of this neutral plane (parallel to the Z-axis) and the optical axis AXb becomes the angle of incidence θα of the illumination light ILm to the DMD10. The DMD10 is mounted on the lower side of the mount portion 10M fixed to the support column of the illumination unit ILU. The mount portion 10M is provided with a micro-adjustment stage that combines a parallel link mechanism and an extendable piezoelectric element, for example, as disclosed in International Publication No. 2006 / 120927, in order to fine-tune the position and orientation of the DMD10.

[0025] [DMD Configuration] Figure 5(a) is a schematic diagram of the DMD10, Figure 5(b) shows the DMD10 when the power is OFF, Figure 5(c) is a diagram to explain the mirror in the ON state, and Figure 5(d) is a diagram to explain the mirror in the OFF state. In Figures 5(a) to 5(d), the mirror in the ON state is indicated by hatching.

[0026] The DMD10 has multiple micromirrors 10a whose reflection angle can be changed. In this embodiment, the DMD10 is a roll and pitch drive system that switches between an ON state and an OFF state by tilting the micromirrors 10a in the roll direction and in the pitch direction.

[0027] As shown in Figure 5(a), when the power is off, the reflective surface of each micromirror 10a is set parallel to the X'Y' plane. The arrangement pitch of each micromirror 10a in the X' direction is Pdx (μm), and the arrangement pitch in the Y' direction is Pdy (μm), but in practice, Pdx = Pdy is set.

[0028] Each micromirror 10a is turned ON by tilting around the Y' axis. Figure 5(c) shows the case where only the central micromirror 10a is turned ON, and the other micromirrors 10a are in a neutral state (neither ON nor OFF). Each micromirror 10a is turned OFF by tilting around the X' axis. Figure 5(d) shows the case where only the central micromirror 10a is turned OFF, and the other micromirrors 10a are in a neutral state. Although not shown for simplification, the ON micromirror 10a is driven to tilt at a predetermined angle from the X'Y' plane so that the illumination light shining on the ON micromirror 10a is reflected in the X direction of the XZ plane. The OFF micromirror 10a is driven to tilt at a predetermined angle from the X'Y' plane so that the illumination light shining on the OFF micromirror 10a is reflected in the Y direction of the YZ plane. The DMD10 generates an exposure pattern by switching the ON and OFF states of each micromirror 10a.

[0029] Illumination light reflected by the mirror in the OFF state is absorbed by a light absorber (not shown).

[0030] Although the DMD10 was described as a reflective type that reflects laser light, a spatial light modulator can also be a transmissive type that transmits laser light, or a diffractive type that diffracts laser light. A spatial light modulator can modulate laser light both spatially and temporally.

[0031] Returning to Figure 4, the illumination light ILm irradiated onto the ON-state micromirror 10a of the DMD10 is reflected in the X direction within the XZ plane so as to be directed toward the projection unit PLU. On the other hand, the illumination light ILm irradiated onto the OFF-state micromirror 10a of the DMD10 is reflected in the Y direction within the YZ plane so as not to be directed toward the projection unit PLU.

[0032] A movable shutter 114 is detachably provided in the optical path between the DMD10 and the projection unit PLU to block reflected light from the DMD10 during non-exposure periods. As shown on the module MU19 side, the movable shutter 114 is rotated to an angled position that retracts from the optical path during exposure periods, and as shown on the module MU18 side, it is rotated to an angled position that inserts it diagonally into the optical path during non-exposure periods. A reflective surface is formed on the DMD10 side of the movable shutter 114, and the light from the DMD10 reflected there irradiates the light absorber 117. The light absorber 117 absorbs light energy in the ultraviolet wavelength range (wavelengths of 400 nm or less) without re-reflecting it and converts it into thermal energy. For this reason, the light absorber 117 is also provided with a heat dissipation mechanism (heat dissipation fins or cooling mechanism). Although not shown in Figure 4, the reflected light from the micromirror 10a of the DMD10, which is in the OFF state during the exposure period, is absorbed by a similar light absorber (not shown in Figure 4) installed in the Y direction (a direction perpendicular to the plane of the paper in Figure 4) relative to the optical path between the DMD10 and the projection unit PLU, as described above.

[0033] [Projection Unit Configuration] The projection unit PLU, mounted on the underside of the optical base plate 5, is configured as a bilateral telecentric imaging projection lens system consisting of a first lens group 116 and a second lens group 118 arranged along the optical axis AXa parallel to the Z axis. The first lens group 116 and the second lens group 118 are each configured to be translated by a micro-actuator in the direction along the Z axis (optical axis AXa) relative to a support column fixed to the underside of the optical base plate 5. The projection magnification Mp of the imaging projection lens system formed by the first lens group 116 and the second lens group 118 is determined by the relationship between the array pitch Pd of the micromirrors on the DMD 10 and the minimum line width (minimum pixel dimension) Pg of the pattern projected within the projection area IAn (n=1~27) on the substrate P.

[0034] For example, if the required minimum line width (minimum pixel dimension) Pg is 1 μm and the micromirror array pitch Pd is 5.4 μm, the projection magnification Mp is set to approximately 1 / 6, taking into account the inclination angle θk of the projection region IAn (DMD10) in the XY plane, as explained in Figure 3 above. The imaging projection lens system, consisting of lens groups 116 and 118, inverts / reverses the reduced image of the entire mirror surface of DMD10 and projects it onto the projection region IA18 (IAn) on the substrate P.

[0035] The first lens group 116 of the projection unit PLU is movable in the direction of the optical axis AXa by an actuator to fine-tune the projection magnification Mp (by approximately ± tens of ppm), and the second lens group 118 is movable in the direction of the optical axis AXa by an actuator to fast-speed adjustment of the focus. Furthermore, multiple obliquely incident light type focus sensors 120 are provided on the underside of the optical base plate 5 in order to measure the position change of the substrate P surface in the Z-axis direction with sub-micron accuracy. The multiple focus sensors 120 measure the overall position change of the substrate P in the Z-axis direction, the position change of a partial region on the substrate P corresponding to each of the projection regions IAn (n=1~27), ​​or the partial tilt change of the substrate P.

[0036] As explained in Figure 3, the illumination unit ILU and projection unit PLU are arranged such that the projection area IAn needs to be tilted by an angle θk in the XY plane. Therefore, the DMD10 and illumination unit ILU (at least the optical path portion of mirrors 102 to 112 along the optical axis AXc) in Figure 4 are arranged so that they are tilted by an angle θk in the XY plane as a whole.

[0037] The light beam formed by the reflected light from only the ON-state micromirrors 10a of the DMD10 (i.e., a spatially modulated light beam) is projected via the projection unit PLU onto a region on the substrate P that is optically conjugate to the micromirrors 10a. In the following, the region on the substrate P conjugate to each micromirror 10a will be called a light-irradiated region, and the collection of light-irradiated regions will be called a light-irradiated region group. The projection region IAn coincides with the light-irradiated region group. That is, the light-irradiated region group on the substrate P has a number of light-irradiated regions arranged in two dimensions (X' and Y' directions).

[0038] [Configuration of exposure control device] Various processes, including scanning exposure processing, performed in the exposure apparatus EX having the above configuration are controlled by the exposure control device 300. Figure 6 is a functional block diagram showing the functional configuration of the exposure control device 300 provided in the exposure apparatus EX according to this embodiment.

[0039] The exposure control device 300 comprises a drawing data storage unit 310, a drive control unit 304 including a control data creation unit, and an exposure control unit 306.

[0040] The drawing data storage unit 310 stores drawing data for the display panel patterns that are exposed by each of the multiple modules MUn (n=1 to 27). The drawing data storage unit 310 sends drawing data MD1 to MD27 for pattern exposure to each of the DMD10s of the 27 modules MU1 to MU27 shown in Figure 2. Modules MUn (n=1 to 27) selectively drive the micromirrors 10a of the DMD10 based on the drawing data MDn to generate a pattern corresponding to the drawing data MDn and project it onto the substrate P. In other words, the drawing data is data that switches the ON state and the OFF state of each micromirror 10a of the DMD10.

[0041] The drive control unit 304 creates control data CD1 to CD27 based on the measurement results of the interferometer IFX and sends them to modules MU1 to MU27. The drive control unit 304 also scans the XY stage 4A in the scanning direction (X-axis direction) at a predetermined speed based on the measurement results of the interferometer IFX.

[0042] Modules MU1 to MU27 control the driving of the micromirrors 10a of the DMD 10 during scanning exposure based on the drawing data MD1 to MD27 and the control data CD1 to CD27 sent from the drive control unit 304. Here, the control data CD1 to CD27 are reset pulses. When each micromirror 10a receives a reset pulse, it assumes a predetermined position according to the drawing data MD1 to MD27. At this time, each micromirror 10a changes its position to one corresponding to the number of reset pulses it has received each time it receives a reset pulse.

[0043] The exposure control unit (sequencer) 306 controls the transmission of drawing data MD1 to MD27 from the drawing data storage unit 310 to modules MU1 to MU27 and the transmission of control data CD1 to CD27 (reset pulses) from the drive control unit 304, in synchronization with the scanning exposure (movement position) of the substrate P.

[0044] [Exposure process for line patterns] Figure 7 is a schematic diagram showing the projection region (group of light-irradiated regions) IAn and the exposure target region (region to expose the line pattern) 30 on the substrate P. In this embodiment, the exposure target region 30 is scanned relative to the projection region (group of light-irradiated regions) IAn, and the DMD 10 turns on the micromirror 10a corresponding to the light-irradiated region 32 when the center (referred to as the spot position) of the light-irradiated region 32 included in the projection region (group of light-irradiated regions) IAn is located within the exposure target region 30.

[0045] Here, as shown in Figure 8, we focus on a rectangular region 34 which is part of the linear exposure target region 30 (see the dashed frame (reference numeral 34) in Figure 7). This rectangular region 34 is, for example, a square region with sides of 1 μm. We also assume that the light irradiation region 32 corresponding to each micromirror 10a is a square region with sides of 1 μm. Furthermore, we assume that θk (the inclination angle of the X' axis with respect to the X axis) is an angle that satisfies tanθk = 1 / 5.

[0046] The following describes the differences in how the rectangular region 34 is exposed depending on the scanning speed of the substrate P.

[0047] (In the case of the first scanning speed) The first scanning speed is such that, as shown in Figure 8, when the rectangular region 34 is at position 34A, the DMD 10 receives a reset pulse from the drive control unit 304 and turns on the micromirror corresponding to the light-illuminated region 210a, and when the DMD 10 receives the next reset pulse and turns on the micromirror corresponding to the light-illuminated region 210c, the rectangular region 34 is at position 34C. In this case, the rectangular region 34 moves by the free-travel distance shown in Figure 8 between reset pulses. That is, the free-travel distance is the distance between the rectangular region 34 at position 34A and the rectangular region 34 at position 34C.

[0048] Here, at position 34B (see dashed rectangle frame) just before position 34C, the center position of the rectangular region 34 coincides with the center position of the light-illuminated region 210b. Similarly, at position 34A, the center position of the rectangular region 34 coincides with the center position of the light-illuminated region 210a. Therefore, omitting the idle distance, the positional relationship between the rectangular region 34 and the group of light-illuminated regions when scanning the substrate P at the first scanning speed can be represented as shown in Figure 9(a). In Figure 9(a), the position of the rectangular region 34 each time the DMD 10 changes the state of the micromirror 10a, and the center position (●) of the light-illuminated region 32 corresponding to the micromirror 10a that exposes the rectangular region 34 are shown. Figure 9(b) is a diagram from Figure 9(a) with the light-illuminated region 32 omitted. When the rectangular region 34 is exposed in this manner, it is exposed in 26 pulses such that the spot positions are located in a 6x6 square arrangement (i.e., the spot positions are located on grid points aligned in the X and Y directions). At this time, the spacing between adjacent spot positions in the X and Y directions is 0.2 μm.

[0049] (In the case of the second scanning speed) The second scanning speed is such that, as shown in Figure 8, when the rectangular region 34 is at position 34D, the DMD 10 receives a reset pulse from the drive control unit 304 and turns on the micromirror corresponding to the light-illuminated region 210d, and when the DMD 10 receives the next reset pulse and turns on the micromirror corresponding to the light-illuminated region 210f, the rectangular region 34 is at position 34F. In this case, the rectangular region 34 moves by the free travel distance shown in Figure 8 + 1 / 5 (μm) between reset pulses.

[0050] Here, at position 34E, just before position 34F, the center position of the rectangular region 34 coincides with the center position of the light-illuminated region 210e. Also, at position 34D, the center position of the rectangular region 34 coincides with the center position of the light-illuminated region 210d. Therefore, omitting the idle distance, the positional relationship between the rectangular region 34 and the group of light-illuminated regions when scanning the substrate P at the second scanning speed can be represented as shown in Figure 10(a). In Figure 10(a), the position of the rectangular region 34 and the center position (●) of the light-illuminated region 32 corresponding to the micromirror 10a that exposes the rectangular region 34 are shown each time the DMD 10 receives a reset pulse and changes the state of the micromirror 10a. Figure 10(b) is a diagram from Figure 10(a) with the light-illuminated region 32 omitted. When the rectangular region 34 is exposed in this way, with 14 pulses, the rectangular region 34 will be exposed with 18 spot positions arranged (staggered) as shown in Figure 10(c). At this time, the distance between adjacent spot locations in the X-axis and Y-axis directions will be 0.2 μm.

[0051] By using a staggered arrangement (see Figure 10(c)), dense exposure equivalent to that of a square arrangement can be achieved even with fewer pulses than in a square arrangement (Figure 9(c)). In other words, by using a staggered arrangement, exposure can be performed with the same resolution as in a square arrangement. This makes it possible to increase the scanning speed of the substrate P and achieve high throughput. Therefore, in this embodiment, θk and the scanning speed of the substrate P are determined so that the spot positions are arranged in a staggered pattern as shown in Figure 10(c). Hereinafter, exposure as shown in Figure 10(c) will be referred to as staggered exposure.

[0052] In the examples in Figures 8 to 10, the case where tanθk = 1 / 5 was explained. However, to perform staggered exposure, A in tanθk = 1 / A can be set to 5, 7, 9, 11, etc. Furthermore, by reducing the rotation angle (θk), the length of the DMD10 can be used effectively, so the exposure device should effectively use a rotation angle of 1:B (where B is an integer).

[0053] For example, if tanθk = 1 / 11 and spot positions are arranged in a staggered pattern within a rectangular region 34 (side length 1 μm) (with an X-axis and Y-axis spacing of 0.1 μm between adjacent spot positions), the arrangement can be such that the spot positions are located at the four corners of the rectangular region 34, as shown in arrangement (1) of Figure 11. Alternatively, the arrangement can be such that the spot positions are not located at the four corners of the rectangular region 34, as shown in arrangement (2). Furthermore, the arrangement can be such that each spot position is located inside the rectangular region 34, as shown in arrangement (3). As shown in Figure 11, arrangements (1) and (2) require 61 pulses, while arrangement (3) requires 50 pulses. Therefore, for example, arrangements (1), (2), or (3) can be selected according to the sensitivity of the resist to be coated on the substrate P.

[0054] [Exposure of line patterns using joints] Figure 12 schematically shows the state of exposing a line pattern at a joint (e.g., joint OLa). As shown in Figure 12, even when exposing a line pattern at a joint OLa, in this embodiment, the rectangular area 34 is exposed in a staggered pattern. In this case, if the entire line pattern can be exposed with one of the DMDs that exposes the joint OLa (e.g., the DMD corresponding to the projection area IA10), the line pattern may be exposed using only one DMD. Also, if the line pattern cannot be exposed without using both DMDs, the areas that can be exposed with one DMD may be exposed, and the remaining areas may be exposed with the other DMD. Furthermore, the number of exposure pulses may be distributed approximately equally to each of the two DMDs. In this case, the areas (spot positions) to be exposed using each DMD may be set randomly, or, as shown by the "black circles (●)" and "white circles (○)" in Figure 13, the proportion of areas exposed by one DMD may gradually increase or decrease with respect to the non-scanning direction (Y-axis direction) and the scanning direction.

[0055] Note that while Figure 12 illustrates the case where the joint is exposed using two DMDs, it is not limited to this. For example, when performing step-and-scan exposure, in which the substrate P is scanned in the scanning direction across the projection area of ​​one DMD, then stepped in the non-scanning direction, and then scanned in the reverse direction, the joint is the point where the projection area of ​​the DMD passes over twice in a row. Staggered exposure can also be performed when exposing this joint as described above.

[0056] [Line pattern position correction] As shown in Figure 14(a), when a 1 μm wide line pattern is realized using a staggered shot with a grid spacing of 0.1 μm, a method for correcting the position of the line pattern in the non-scanning direction in units of 10 nm (= 0.01 μm) will be described.

[0057] To shift the line pattern in Figure 14(a) by, for example, 100 nm to the left (-Y direction), this can be achieved by removing the rightmost row of spots (the five spot positions indicated by white circles) and adding a new row of spots (the five spot positions indicated by double black circles) to an adjacent position on the left side (the side to which the line pattern is to be moved), as shown in Figure 14(k).

[0058] On the other hand, to shift the line pattern to the left by 20 nm, which is 1 / 5 of 100 nm, this can be achieved by eliminating one spot position near the center of the rightmost spot row (indicated by a white circle) and adding a new spot position (indicated by a double black circle) to the left, as shown in Figure 14(c).

[0059] Furthermore, to shift the line pattern 10 nm to the left, as shown in Figure 14(b), this can be achieved by eliminating the central spot position (indicated by the white circle) and adding a new spot position (indicated by the double black circle) to the left. The amount of shift in the line pattern can be increased by eliminating / adding spot positions on or near the edge of the line pattern, compared to eliminating / adding spot positions in or near the center of the line pattern.

[0060] By changing the combination of adding new spot positions to the left and deleting (or not deleting) some of the original spot positions, the line pattern can be shifted to the left in 10nm increments, such as 10nm, 20nm, ..., 90nm, 100nm, as shown in Figures 14(b) to 14(k).

[0061] Figure 15 shows the position measurement results when the line pattern position correction was performed using the methods in Figures 14(a) to 14(k). In this position measurement, the extent to which the line pattern position was corrected (shifted) in the Y-axis direction was measured at 11 locations in the X-axis direction indicated by arrows in Figure 14(a). From Figure 15, it can be seen that the line pattern position was corrected to approximately the desired position at all locations in the X-axis direction.

[0062] In this embodiment, when it is desired to correct the position of the line pattern by a distance less than or equal to the grid spacing (the spacing of the spot positions in the X and Y directions) of the staggered arrangement, the ON / OFF state of the micromirror 10a of the DMD 10 is controlled so that staggered exposure is performed as shown in Figures 14(b) to 14(k). This allows the pattern to be exposed at the desired position. To correct the position of the line pattern by shifting it to the right (+Y direction), Figures 14(b) to 14(k) should be reversed horizontally and applied.

[0063] [Adjusting the line width of the line pattern] As shown in Figure 16(a), when a line pattern with a width of 1 μm is realized in a staggered arrangement where the spacing between adjacent spot positions (spacing in the X and Y axes) is 0.1 μm, a method for adjusting the width (line width) of the line pattern in the non-scanning direction (Y axis direction) in units of 10 nm (= 0.01 μm) will be described. In this embodiment, the line width is adjusted by a combination of placing the same number of new spot positions at adjacent positions on both sides of the original line pattern (referred to as the reference pattern) shown in Figure 16(a), and deleting (or not deleting) some of the spot positions of the reference pattern.

[0064] For example, as shown in Figure 16(b), the line width can be increased by 10 nm by placing one new spot position (double black circle) on each side of the reference pattern in Figure 16(a) and deleting two spot positions (white circles) from the reference pattern. To increase the line width by 20 nm, as shown in Figure 16(c), one new spot position (double black circle) can be placed on each side of the reference pattern and two spot positions (different from those in Figure 16(b)) can be deleted from the reference pattern.

[0065] Furthermore, to increase the line width by 30 nm, as shown in Figure 16(d), one new spot position (double black circle) should be placed on each of the outer edges of the reference pattern, while deleting three spot positions in the central column of the reference pattern. Additionally, to increase the line width by 40 nm, as shown in Figure 16(e), one new spot position (double black circle) should be placed on each of the outer edges of the reference pattern, while not deleting any spot positions in the reference pattern.

[0066] Even when increasing the line width by only 50nm, 60nm, ..., 220nm, the line width can be adjusted by combining the placement of the same number of new spot positions on both sides of the reference pattern in Figure 16(a) and the deletion (or retention) of some of the spot positions in the reference pattern, as shown in Figures 16(f) to 16(k) and Figures 17(a) to 17(l).

[0067] Figure 18 shows the measurement results of the line width when the line width of the line pattern was adjusted using the methods in Figures 16(a) to 17(l). In this line width measurement, the line width (width in the Y-axis direction) of the line pattern was measured at 11 locations in the X-axis direction indicated by arrows in Figure 16(a). From Figure 18, it can be seen that the line width of the line pattern could be adjusted to approximately the desired line width at any position in the X-axis direction.

[0068] In this embodiment, when it is desired to adjust the line width of the line pattern by a size less than or equal to the staggered grid spacing (the spacing of the spot positions in the X and Y directions), the ON / OFF state of the micromirror 10a of the DMD 10 is controlled so that exposure is performed as shown in Figures 16(b) to 17(l). This makes it possible to obtain the desired line pattern with high precision.

[0069] [Correction based on distortion measurement results] Figure 19(a) shows an example of the results of measuring the distortion of the projected image of a module contained in an exposure module by test exposure, etc. The arrows at each point indicate the direction and magnitude of the distortion. The measurement of distortion includes exposure of the substrate P using a test pattern (test exposure), detection of the image exposed on the substrate P (transfer image), and creation of image distortion data (distortion data) using the detection results.

[0070] For example, when exposing a square area with sides of 1 μm, the following exposure procedure is performed to counteract the effects of distortion.

[0071] For example, if distortion measurement results like those shown in Figure 19(a) are obtained, the average value of the distortion at points with the same position in the non-scanning direction is calculated. An example of the calculation result of the average value of distortion for each position in the non-scanning direction is shown in Figure 19(b). Using this average value of distortion for each position in the non-scanning direction, the spot position when exposing a square area is devised for each position in the non-scanning direction. For example, as shown on the far left of Figure 19(b), if the average value of distortion is 0.05 μm in the X direction and -0.06 μm in the Y direction, then as shown in Figure 19(c), three new spot positions (double black circles) should be placed to the left and below the reference staggered exposure pattern (reference pattern), and five spot positions should be deleted from the original square pattern.

[0072] Furthermore, at other non-scanning positions, the spot position can be changed according to the average value of the distortion, as shown in Figures 19(d) to 19(g). This suppresses the impact of distortion on exposure accuracy. In this example, the processing can be simplified by calculating and using the average value of the distortion for each position in the non-scanning direction. Also, by using the average value of the distortion for each position in the non-scanning direction, it is possible to prevent patterns extending in the scanning direction from being exposed with a jagged shape.

[0073] [Correction based on illuminance distribution measurement results] Figure 20(a) shows an example of the measurement results of the illuminance distribution in one exposure area.

[0074] For example, when exposing a square area with sides of 1 μm, the following exposure procedure is performed to suppress the effects of illuminance distribution.

[0075] When the illuminance distribution measurement results shown in Figure 20(a) are obtained, the average illuminance of the points with the same position in the non-scanning direction is calculated. An example of the calculation results of the average illuminance for each position in the non-scanning direction is shown in Figure 20(b). In the example in Figure 20(b), the calculated values ​​from left to right are assumed to be 1.0%, 0.4%, 0.2%, 0.0%, and 0.3%. In this example, based on the photoresist conditions, it is assumed that the line width narrows by 50 nm for every 1.0% increase in illuminance, and exposure is performed so that the line width increases as the illuminance increases. The method for widening the line width is the same as in Figures 16(b) to 17(l).

[0076] For example, as shown on the far left of Figure 20(b), when the illuminance is 1.0%, in order to widen the line width by 50 nm, two new spot positions (double black circles) are placed on each side of the reference staggered exposure pattern (reference pattern), as shown in Figure 20(c), and two spot positions are deleted from the reference pattern.

[0077] Furthermore, at other non-scanning positions, the spot position is changed from the reference pattern according to the illuminance, as shown in Figures 20(d) to 20(g). This suppresses the influence of the illuminance distribution on exposure accuracy. In this example, the average value of the illuminance for each position in the non-scanning direction is calculated and used in the processing, thus simplifying the process. Also, by using the average value of the illuminance for each position in the non-scanning direction, it is possible to prevent, for example, patterns extending in the scanning direction from being exposed in a jagged shape.

[0078] As described in detail above, this embodiment includes a substrate holder 4B that holds and moves the substrate P, exposure modules MU(A), MU(B), and MU(C) having a DMD 10, and a drive control unit 304 that drives the substrate holder 4B in the scanning direction. The arrangement direction of the light irradiation areas (X' axis, Y' axis) in the light irradiation area group of the exposure module is inclined by an angle θk with respect to the scanning direction and non-scanning direction, and the drive control unit 304 scans the substrate holder 4B at a speed such that staggered exposure occurs (the spot positions are arranged in a staggered pattern) when a predetermined range of the substrate P is exposed. As a result, exposure can be performed with the same resolution as a square arrangement, even though the number of pulses is less (about 60%) than when the spot positions are arranged in a square arrangement. The DMD 10 has a finite number of micromirrors 10a in the scanning direction, but by exposing the pattern with a small number of pulses, the possibility of exposing the desired pattern in a single scan can be increased. In addition, because the pattern can be exposed with a small number of pulses, the stage speed can be increased, and the throughput of the exposure apparatus can be improved.

[0079] Furthermore, in this embodiment, even when exposing the joint using two DMD10s, staggered exposure is performed, so the same pattern as the rest of the image can be exposed at the joint.

[0080] Furthermore, in this embodiment, when it is desired to expose a line pattern shifted by a distance smaller than the grid spacing, the DMD10 is driven to expose a portion of the spot positions within the line pattern before the shift to the outside of the line pattern (outside in the direction of the desired shift). This makes it possible to easily expose a line pattern shifted by a distance smaller than the grid spacing.

[0081] Furthermore, in this embodiment, if the line width of the line pattern is to be increased by a dimension smaller than the grid spacing, the same number of new spot positions are placed on both sides of the original line pattern (reference pattern), and the DMD10 is driven to reduce (or not reduce) the number of spot positions of the original line pattern. This makes it easy to increase the line width of the line pattern by a dimension smaller than the grid spacing during exposure.

[0082] Furthermore, in this embodiment, the spot position of the line pattern is changed based on the module's distortion and illuminance distribution so as to suppress the effects of distortion and illuminance distribution. This makes it possible to easily suppress the impact of distortion and illuminance distribution on exposure accuracy.

[0083] In addition, in the illumination unit ILU of the above embodiment, in order to increase the resolution, the NA and σ can be made variable, the illumination conditions can be made variable, or OPC (Optical Proximity Correction) technology (a technology that overcomes the optical proximity effect by using an auxiliary pattern) can be used.

[0084] The embodiments described above are preferred examples of the present invention. However, the invention is not limited thereto, and various modifications are possible without departing from the spirit of the invention. [Explanation of Symbols]

[0085] 4B PCB holder 10 DMD 10a Micromirror 304 Drive Control Unit EX Exposure System P board

Claims

1. A substrate holder that holds the substrate, A spatial light modulator having multiple optical modulation elements, each of which can be individually controlled, The control device includes a device for moving the substrate holder, The control device irradiates the substrate with light such that the positions of the spots indicating the centers of the light irradiated from each of the multiple first light modulation elements among the multiple light modulation elements do not overlap, thereby exposing the substrate to a line pattern having a predetermined width. The plurality of spots irradiated into the first range include a plurality of outer spots located at the ends in the first direction which is the direction of the width of the first range, and a plurality of inner spots located other than the ends in the first direction of the first range. The plurality of inner spots include at least one specific spot where the closest spot in the first direction is located at a predetermined distance on one side of the first direction, and where no spot is located at the predetermined distance on the other side of the first direction, and for the spots other than the specific spot among the plurality of inner spots, the closest spot in the first direction is located at the predetermined distance on both sides of the first direction. The plurality of outer spots include at least one specific spot in which no spot is located at the predetermined distance on one or the other side of the second direction perpendicular to the first direction, and the closest spot in the second direction is located at the predetermined distance on one and the other side of the second direction of the spots other than the specific spot among the plurality of outer spots. Exposure apparatus.

2. The control device moves the substrate holder in the scanning direction, which is the second direction. The exposure apparatus according to claim 1.

3. The control device exposes a second range having a width greater than the width of the first range in the non-scanning direction by adding a spot to a location adjacent to the first range in the first non-scanning direction. The exposure apparatus according to claim 2.

4. The difference between the width of the second range and the width of the first range is smaller than the width of the first range. The exposure apparatus according to claim 3.

5. The difference between the width of the second range and the width of the first range is smaller than the distance between adjacent spots of light irradiated into the first range. The exposure apparatus according to claim 3.

6. The control device reduces a portion of the spot when the light is irradiated into the first range, and adds a spot to a location adjacent to the first range in the non-scanning direction, thereby exposing a second range that is shifted from the first range in the non-scanning direction. The exposure apparatus according to claim 2.

7. The amount shifted from the first range to the second range is smaller than the width of the first range. The exposure apparatus according to claim 6.

8. The amount shifted from the first range to the second range is smaller than the distance between adjacent spots of light irradiated into the first range. The exposure apparatus according to claim 6.

9. Includes a projection unit that projects the light from the spatial light modulator onto the substrate, The control device, based on the distortion of the projected image by the projection unit, reduces or does not reduce a portion of the spot when the light is irradiated into the first range without distortion, and adds a spot to a location adjacent to the first range in the non-scanning direction which is the first direction. The exposure apparatus according to claim 2.

10. The distortion is measured at multiple locations within a two-dimensional plane, and drawing data corresponding to each location in the non-scanning direction is generated based on the average of the locations where the positions in the non-scanning direction coincide. The exposure apparatus according to claim 9.

11. The control device, based on the illuminance distribution of the light from the spatial light modulator on the substrate, reduces or does not reduce a portion of the spot when the first range is exposed under ideal conditions of the illuminance distribution, and adds a spot to a location adjacent to the first range in the non-scanning direction, which is the first direction. The exposure apparatus according to claim 2.

12. In a control device that exposes a line pattern to a substrate by irradiating a first area of ​​the substrate with light from multiple optical modulation elements included in a spatial light modulator, when the position of the line pattern to be exposed to the substrate is not corrected, A control device that, based on a correction amount for the position of the line pattern exposed on the substrate, reduces the number of inner spots located outside the edge of the first range in the width direction of the line pattern, among the light spots irradiated onto the first range of the substrate from a plurality of optical modulation elements included in the spatial light modulator, and adds spots to locations adjacent to the first range.

13. In a control device that exposes a line pattern to a substrate by irradiating a first area of ​​the substrate with light from multiple optical modulation elements included in a spatial light modulator, when the width of the line pattern to be exposed to the substrate is not corrected, A control device that, based on a correction amount for the width of the line pattern exposed on the substrate, reduces the number of inner spots located in the width direction other than the edges of the first range among the light spots irradiated onto the first range of the substrate from the plurality of light modulation elements included in the spatial light modulator, and adds spots to locations adjacent to the first range.

14. The correction amount is smaller than the distance between adjacent spots of light irradiated into the first range. The control device according to claim 12 or 13.

15. A substrate holder that holds the substrate and moves in the scanning direction, The spatial light modulator and, The control device according to claim 12 or 13, Exposure apparatus.

16. The plurality of optical modulation elements are arranged in a two-dimensional plane parallel to the scanning direction and in a direction intersecting the scanning direction. The control device moves the substrate holder so that, among the spots of light irradiated in the first range from the plurality of light modulation elements, the light is first irradiated to the first spot, and then to the second spot. The second spot is the spot closest to the first spot and aligned with the first spot in a direction intersecting the scanning direction, among the spots of light irradiated from the plurality of optical modulation elements into the first range. An exposure apparatus according to any one of claims 2 to 11.

17. The plurality of optical modulation elements are arranged in a two-dimensional plane parallel to the scanning direction and in a direction intersecting the scanning direction. The control device controls the number of light spots irradiated in the first range by controlling the movement speed of the substrate holder in the scanning direction. An exposure apparatus according to any one of claims 2 to 11.

Images