Display device and method for manufacturing a display device

Abstract

Provided is a display apparatus that has a light detection function, and has a highly accurate light detection function. The display apparatus has a light receiving device and a first light producing device. The light receiving device has a first electrode, a light receiving layer, and a common electrode, which are layered in this order. The first light producing device has a second electrode, a first EL layer, and a common electrode, which are layered in this order. The light receiving layer has a first layer, a second layer, and an active layer between the first layer and the second layer. The first layer includes a first substance having a positive hole transport property, and the second layer includes a second substance having an electron transport property. An end section of the active layer, an end section of the first layer, and an end section of the second layer are uniform or nearly uniform with one another. The first EL layer has a third layer, a fourth layer, and a first light producing layer between the third layer and the fourth layer. The third layer includes a third substance having a positive hole transport property, and the fourth layer includes a fourth substance having an electron transport property.

Description

Technical Field

[0001] One aspect of the present invention relates to a display device. One aspect of the present invention relates to a method for manufacturing a display device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. As the technical field of one aspect of the present invention disclosed in this specification and the like, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices, input / output devices, their driving methods, or their manufacturing methods can be cited as an example. A semiconductor device refers to all devices that can function by utilizing semiconductor characteristics.

Background Art

[0003] In recent years, display devices are used in various devices such as information terminal devices such as smartphones, tablet terminals, and laptop PCs, television devices, and monitor devices. Further, there is a demand for a display device to which various functions are added in addition to displaying an image, such as a function as a touch sensor or a function of imaging a fingerprint for authentication.

[0004] As a display device, for example, a light-emitting device (also referred to as a light-emitting element) having a light-emitting device has been developed. A light-emitting device (also referred to as an EL device or an EL element) that utilizes the electroluminescence (EL) phenomenon has characteristics such as being easily thinned and lightened, being able to respond quickly to an input signal, and being able to be driven using a DC constant voltage power supply, and is applied to a display device. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL device (also referred to as an organic EL element) is applied.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

[0006] One aspect of the present invention aims to provide a display device having a light detection function and high resolution. One aspect of the present invention aims to provide a display device having a highly accurate light detection function. One aspect of the present invention aims to provide a display device having a light detection function and low power consumption. One aspect of the present invention aims to provide a highly reliable display device having a light detection function. One aspect of the present invention aims to provide a novel display device.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems can be identified from the description in the specification, drawings, claims, etc. [Means for solving the problem]

[0008] One aspect of the present invention is a display device having a light-receiving device and a first light-emitting device. The light-receiving device has a first electrode, a light-receiving layer, and a common electrode stacked in this order. The first light-emitting device has a second electrode, a first EL layer, and a common electrode stacked in this order. The light-receiving layer has a first layer, a second layer, and an active layer between the first and second layers. The first layer contains a first substance having hole-transporting properties, and the second layer contains a second substance having electron-transporting properties. The edges of the active layer, the edges of the first layer, and the edges of the second layer coincide or substantially coincide with each other. The first EL layer has a third layer, a fourth layer, and a first light-emitting layer between the third and fourth layers. The third layer contains a third substance having hole-transporting properties, and the fourth layer contains a fourth substance having electron-transporting properties. The edge of the first light-emitting layer is located inside the edge of the third layer and inside the edge of the fourth layer.

[0009] In the aforementioned display device, it is preferable that the active layer has a region that overlaps with the first electrode via the first layer.

[0010] In the aforementioned display device, it is preferable that the active layer has a region that overlaps with the first electrode via a second layer.

[0011] In the aforementioned display device, it is preferable that the first light-emitting layer has a region that overlaps with the second electrode via a third layer.

[0012] In the aforementioned display device, it is preferable that the first light-emitting layer has a region that overlaps with the second electrode via a fourth layer.

[0013] In the aforementioned display device, it is preferable that the edges of the third layer and the edges of the fourth layer coincide or substantially coincide.

[0014] In the aforementioned display device, it is preferable that the first substance is different from the third substance.

[0015] In the aforementioned display device, it is preferable that the second substance is different from the fourth substance.

[0016] In the aforementioned display device, it is preferable that the active layer has a fifth substance, and the first light-emitting layer has a sixth substance different from the fifth substance.

[0017] In the aforementioned display device, it is preferable to have a second light-emitting device. The second light-emitting device is preferably made up of a third electrode, a second EL layer, and a common electrode, stacked in this order. The second EL layer is preferably made up of a third layer, a fourth layer, and a second light-emitting layer between the third and fourth layers.

[0018] In the aforementioned display device, it is preferable to have a second light-emitting device. The second light-emitting device is preferably made up of a third electrode, a second EL layer, and a common electrode, stacked in this order. The second EL layer is preferably made up of a fifth layer, a sixth layer, and a second light-emitting layer between the fifth and sixth layers. The fifth layer is preferably made up of a third substance, and the sixth layer is preferably made up of a fourth substance.

[0019] In the aforementioned display device, it is preferable that the second light-emitting layer has a seventh substance that is different from the sixth substance.

[0020] One aspect of the present invention comprises the steps of: forming a first electrode and a second electrode; forming a light-receiving film on the first electrode and the second electrode; forming an island-shaped first sacrificial layer on the light-receiving film having a region overlapping with the first electrode; etching the light-receiving film using the first sacrificial layer as a mask to form a light-receiving layer and expose the second electrode; forming a first functional film on the first sacrificial layer and the second electrode; and forming an island-shaped light-emitting layer on the first functional film using a metal mask, having a region overlapping with the second electrode. The method for manufacturing a display device comprises the steps of: forming a second functional film on an emissive layer and a first functional film; forming an island-shaped second sacrificial layer on the second functional film having a region overlapping with the emissive layer; etching the first functional film and the second functional film using the second sacrificial layer as a mask to form the first functional layer and the second functional layer, while exposing the first sacrificial layer; removing the first sacrificial layer and the second sacrificial layer to expose the light-receiving layer and the second functional layer; and forming a common electrode on the light-receiving layer and the second functional layer. The first functional layer contains a material having hole transport properties, and the second functional layer contains a material having electron transport properties.

[0021] One aspect of the present invention is a method for manufacturing a display device, comprising the steps of: forming a first electrode and a second electrode; forming a light-receiving film on the first electrode and the second electrode; forming an island-shaped sacrificial layer on the light-receiving film having a region overlapping with the first electrode; etching the light-receiving film using the sacrificial layer as a mask to form a light-receiving layer and expose the second electrode; forming a first functional layer on the sacrificial layer and forming a second functional layer on the second electrode; forming an island-shaped light-emitting layer on the second functional layer using a metal mask and having a region overlapping with the second electrode; forming a third functional layer on the first functional layer and forming a fourth functional layer on the light-emitting layer; removing the sacrificial layer, lifting off the first and third functional layers and exposing the light-receiving layer; and forming a common electrode on the light-receiving layer and the fourth functional layer. The second functional layer contains a material having hole-transporting properties, and the fourth functional layer contains a material having electron-transporting properties. [Effects of the Invention]

[0022] According to one aspect of the present invention, a display device having a light detection function and high resolution can be provided. According to one aspect of the present invention, a display device having a highly accurate light detection function can be provided. According to one aspect of the present invention, a display device having a light detection function and low power consumption can be provided. According to one aspect of the present invention, a highly reliable display device having a light detection function can be provided. According to one aspect of the present invention, a novel display device can be provided.

[0023] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0024] Figures 1A to 1D are cross-sectional views showing examples of the configuration of a display device. Figure 1E is a diagram showing an example of an captured image. Figures 2A to 2D are cross-sectional views showing examples of the configuration of a display device. Figures 3A and 3B are cross-sectional views showing examples of the configuration of a display device. Figure 4A is a top view showing an example of the configuration of a display device. Figure 4B is a cross-sectional view showing an example of the configuration of a display device. Figures 5A and 5B are cross-sectional views showing examples of the configuration of a display device. Figures 6A to 6C are cross-sectional views showing examples of the configuration of a display device. Figures 7A to 7C are cross-sectional views showing examples of the configuration of a display device. Figures 8A to 8C are cross-sectional views showing examples of the configuration of a display device. Figures 9A and 9B are cross-sectional views showing examples of the configuration of a display device. Figures 10A to 10E are cross-sectional views showing examples of methods for manufacturing a display device. Figures 11A to 11D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 12A to 12D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 13A to 13D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 14A to 14C are cross-sectional views showing examples of methods for manufacturing a display device. Figures 15A to 15D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 16A to 16D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 17A to 17D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 18A to 18D are cross-sectional views showing examples of methods for manufacturing a display device. Figures 19A and 19B are cross-sectional views showing examples of methods for manufacturing a display device. Figures 20A and 20B are top views showing examples of the configuration of a display device. Figure 21 is a perspective view showing an example of a display device configuration. Figure 22 is a cross-sectional view showing an example of the configuration of a display device. Figure 23 is a cross-sectional view showing an example of the configuration of a display device. Figure 24 is a cross-sectional view showing an example of the configuration of a display device. Figure 25 is a cross-sectional view showing an example of the configuration of a display device. Figure 26 is a cross-sectional view showing an example of the configuration of a display device. Figures 27A to 27D are cross-sectional views showing examples of the configuration of a light-emitting device. Figures 28A to 28G are cross-sectional views showing examples of the configuration of light-receiving and light-emitting devices. Figures 29A to 29E show examples of electronic devices. [Modes for carrying out the invention]

[0025] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0026] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0027] In the figures described herein, the size of each component, the thickness of the layer, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited.

[0028] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements and do not imply any numerical limitation.

[0029] In this specification, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" or "insulating layer" may be interchangeable with the terms "conductive film" or "insulating film."

[0030] In this specification, the term "EL layer" refers to a layer (also called a light-emitting layer) provided between a pair of electrodes of a light-emitting device and containing at least a light-emitting substance, or a laminate containing a light-emitting layer.

[0031] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0032] In this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, a display module, or simply a display panel, etc.

[0033] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention.

[0034] A display device according to one aspect of the present invention has a display unit, the display unit having a plurality of pixels arranged in a matrix. Each pixel has a light-emitting device and a light-receiving device (also called a light-receiving element). The light-emitting device functions as a display device (also called a display element). In one aspect of the present invention, the display unit has light-emitting devices arranged in a matrix, and can display an image on the display unit. Furthermore, in one aspect of the present invention, the display device has a function of detecting light using the light-receiving device.

[0035] In one embodiment of the present invention, the display unit of the display device has light-receiving devices arranged in a matrix, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light with the display unit, it is possible to capture an image or detect the proximity or contact of an object (such as a finger, hand, or pen). Furthermore, in one embodiment of the present invention, the light-emitting device can be used as the light source of the sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0036] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0037] For example, an image sensor can be used to acquire biometric data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By integrating the biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided, resulting in a smaller and lighter electronic device.

[0038] When a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect the proximity or contact of an object.

[0039] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0040] The following sections will explain more specific examples using diagrams.

[0041] <Configuration Example 1> Figures 1A to 1D show cross-sectional views illustrating an example of the configuration of a display device according to one aspect of the present invention.

[0042] The display device 100 shown in Figure 1A has a layer 53 having a light-receiving device and a layer 57 having a light-emitting device between substrate 50 and substrate 59.

[0043] Figure 1A shows a configuration in which red (R), green (G), and blue (B) light is emitted from a layer 57 containing a light-emitting device, and the light is incident on a layer 53 containing a light-receiving device. In Figure 1A, the light emitted from layer 57 and the light incident on layer 53 are indicated by arrows, respectively.

[0044] In this specification, the wavelength range for blue (B) is 400 nm or more and less than 490 nm, and blue (B) light has at least one emission spectral peak in this wavelength range. The wavelength range for green (G) is 490 nm or more and less than 580 nm, and green (G) light has at least one emission spectral peak in this wavelength range. The wavelength range for red (R) is 580 nm or more and less than 700 nm, and red (R) light has at least one emission spectral peak in this wavelength range. In this specification, the wavelength range for visible light is 400 nm or more and less than 700 nm, and visible light has at least one emission spectral peak in this wavelength range. The wavelength range for infrared (IR) is 700 nm or more and less than 900 nm, and infrared (IR) light has at least one emission spectral peak in this wavelength range.

[0045] A display device according to one aspect of the present invention is provided on a display unit with a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has a light-emitting device or a light-receiving device. For example, a pixel can be configured to have four subpixels. Specifically, one pixel can be configured to have a subpixel having a light-emitting device that emits red (R) light, a subpixel having a light-emitting device that emits green (G) light, a subpixel having a light-emitting device that emits blue (B) light, and a subpixel having a light-receiving device.

[0046] Furthermore, the combination of light colors emitted by the light-emitting device of a pixel is not limited to the three colors of red (R), green (G), and blue (B). For example, the combination of light colors emitted by the light-emitting device of a pixel could be yellow (Y), cyan (C), and magenta (M). Moreover, the light colors emitted by the light-emitting device of a pixel may be four or more.

[0047] A pixel may have a configuration that includes five or more subpixels. Specifically, one pixel may have a configuration that includes four types of light-emitting devices: red (R), green (G), blue (B), and white (W), and a light-receiving device. Alternatively, one pixel may have a configuration that includes four types of light-emitting devices: red (R), green (G), blue (B), and infrared (IR), and a light-receiving device. The light-receiving device may be provided for all pixels or for some pixels. A single pixel may have multiple light-receiving devices. For example, one pixel may have a configuration that includes three types of light-emitting devices: red (R), green (G), and blue (B), a light-receiving device sensitive to the visible light wavelength range, and a light-receiving device sensitive to the infrared light wavelength range.

[0048] A display device according to one aspect of the present invention may have the function of detecting an object in contact with the display device. The object is not particularly limited and may be a living organism or an object. If the object is a living organism, the display device may have the function of detecting, for example, a finger or a palm. As shown in Figure 1B, the light emitted by the light-emitting device of layer 57 is reflected by the finger 52 in contact with the display device 100, and the light-receiving device of layer 53 detects the reflected light. This makes it possible to detect that the finger 52 has come into contact with the display device 100. In other words, a display device according to one aspect of the present invention may function as a touch sensor. Also, as shown in Figure 1C, the light emitted by the light-emitting device of layer 57 is reflected by the finger 52 that is close to the display device 100, and the light-receiving device of layer 53 detects the reflected light. This makes it possible to detect that the finger 52 is close to the display device 100. In other words, a display device according to one aspect of the present invention may function as a near-touch sensor.

[0049] If the display device 100 functions as a near-touch sensor, it can detect the finger 52 by being close to the display device 100, even if the finger 52 does not actually touch the display device 100. It is preferable that the display device 100 can detect the finger 52 when the distance between the display device 100 and the finger 52 is, for example, in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device 100 without directly touching it with the finger 52; in other words, it becomes possible to operate the display device 100 without contact (touchless). With this configuration, the risk of the display device 100 becoming dirty or scratched can be reduced, or it becomes possible to operate the display device 100 without the finger 52 directly touching any dirt (e.g., dust or viruses) that may adhere to the display device 100.

[0050] A display device according to one aspect of the present invention may have the function of imaging an object in contact with the display device. The display device may have the function of detecting, for example, the fingerprint of a finger 52. Figure 1D schematically shows an enlarged view of the contact area when a finger 52 is in contact with the substrate 59. Figure 1D also shows how layers 57 having light-emitting devices and layers 53 having light-receiving devices are arranged alternately.

[0051] Fingerprints are formed on finger 52 by recesses and protrusions. Therefore, as shown in Figure 1D, the protrusions of the fingerprints are in contact with the substrate 59.

[0052] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angular dependence of intensity. The light reflected from the surface of finger 52 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 59 and the atmosphere is predominantly specular.

[0053] The intensity of light reflected from the contact or non-contact surface between the finger 52 and the substrate 59, and incident on the layer 53 located directly beneath them, is the sum of specular reflection and diffuse reflection. As described above, in the recessed areas of the finger 52, the substrate 59 and the finger 52 do not come into contact, so specular reflection (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffuse reflection from the finger 52 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the light-receiving device in the layer 53 located directly beneath the recessed areas is higher than the intensity of light received by the light-receiving device in the layer 53 located directly beneath the convex areas. Thus, the fingerprint of the finger 52 can be imaged using the light-receiving device.

[0054] The spacing of the light-receiving devices in layer 53 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between an adjacent recess and a protrusion, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is generally between 150 μm and 250 μm, the spacing of the light-receiving devices is, for example, 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less. A smaller spacing is preferable, but it can be, for example, 1 μm or more, 10 μm or more, or 20 μm or more.

[0055] Figure 1E shows an example of a fingerprint image captured by a display device according to one embodiment of the present invention. In Figure 1E, the contour of the finger 52 is shown by a dashed line and the contour of the contact area 69 is shown by a dashed line in region 65. In region 65, a high-contrast fingerprint 67 can be captured depending on the difference in the amount of light incident on the light-receiving device. Furthermore, fingerprint authentication can be performed using the acquired fingerprint image. Although an example of capturing a fingerprint using a finger as the object has been given here, the embodiment of the present invention is not limited to this. For example, the display device can detect a palm in contact with or close to the display unit. Furthermore, the display device can capture a palm print, and palm print authentication can be performed using the acquired palm print image.

[0056] As described above, in one aspect of the present invention, a light-emitting device emits light that is irradiated onto an object, and a light-receiving device can detect the light reflected by the object. Therefore, even in dark places, an object that is in contact with or close to the display unit can be detected. Furthermore, the display unit can perform authentication such as fingerprint authentication and palm print authentication.

[0057] By integrating the light-receiving device into the display unit, the need to externally attach a sensor to the display device is eliminated. Therefore, the number of components can be reduced, resulting in a smaller and lighter display device.

[0058] The substrate 50 can be a substrate with sufficient heat resistance to withstand the formation of light-emitting devices and light-receiving devices. When an insulating substrate is used as the substrate 50, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used.

[0059] In particular, it is preferable to use a substrate 50 on which a semiconductor circuit including semiconductor elements such as transistors is formed on the aforementioned insulating substrate or semiconductor substrate. It is preferable that the semiconductor circuit constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0060] <Configuration Example 2> [Configuration Example 2-1] The configuration of a light-emitting device and a light-receiving device applicable to a display device according to one aspect of the present invention will be described. A schematic cross-sectional view of a display device according to one aspect of the present invention is shown in Figure 2A. Figure 2A shows the configuration of a light-emitting device 20R, a light-emitting device 20G, a light-emitting device 20B, and a light-receiving device 30PS applicable to the display device.

[0061] Light-emitting devices 20R, 20G, and 20B each have the function of emitting light (hereinafter also referred to as the light-emitting function). It is preferable to use EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes) for light-emitting devices 20R, 20G, and 20B. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF materials). As a TADF material, a material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Such TADF materials have a shorter emission lifetime (excitation lifetime), which can suppress the decrease in efficiency in the high-brightness region of the light-emitting device.

[0062] Light-emitting device 20R has an electrode 21a, an EL layer 25R, and an electrode 23. Light-emitting device 20G has an electrode 21b, an EL layer 25G, and an electrode 23. Light-emitting device 20B has an electrode 21c, an EL layer 25B, and an electrode 23. In light-emitting device 20R, the EL layer 25R sandwiched between electrode 21a and electrode 23 has at least a light-emitting layer 41R. The light-emitting layer 41R has a light-emitting material that emits light. By applying a voltage between electrode 21a and electrode 23, light is emitted from the EL layer 25R. Similarly, the EL layer 25G has at least a light-emitting layer 41G. The light-emitting layer 41G has a light-emitting material that emits light. By applying a voltage between electrode 21b and electrode 23, light is emitted from the EL layer 25G. The EL layer 25B has at least a light-emitting layer 41B. The light-emitting layer 41B has a light-emitting material that emits light. By applying a voltage between electrode 21c and electrode 23, light is emitted from the EL layer 25B.

[0063] Each of the EL layers 25R, 25G, and 25B may further contain one or more of the following: a layer containing a material with high hole injection properties (hereinafter referred to as a hole injection layer), a layer containing a material with high hole transport properties (hereinafter referred to as a hole transport layer), a layer containing a material with high electron transport properties (hereinafter referred to as an electron transport layer), a layer containing a material with high electron injection properties (hereinafter referred to as an electron injection layer), a carrier block layer, an exciton block layer, and a charge generation layer. The hole injection layer, hole transport layer, electron transport layer, electron injection layer, carrier block layer, exciton block layer, and charge generation layer can also be called functional layers.

[0064] In this specification, when describing matters common to light-emitting devices 20R, 20G, and 20B, or when there is no need to distinguish between them, they may simply be referred to as "light-emitting device 20." Similarly, EL layers 25R, 25G, and 25B may simply be referred to as "EL layer 25." The same applies to other components.

[0065] The light-receiving device 30PS has a function to detect light (hereinafter also referred to as the light-receiving function). The light-receiving device 30PS has a function to detect visible light. The light-receiving device 30PS is sensitive to visible light. It is even more preferable that the light-receiving device 30PS has a function to detect both visible light and infrared light. It is preferable that the light-receiving device 30PS is sensitive to both visible light and infrared light. For example, the light-receiving device 30PS can use a pn-type or pin-type photodiode.

[0066] The light-receiving device 30PS includes an electrode 21d, a light-receiving layer 35PS, and an electrode 23. The light-receiving layer 35PS, sandwiched between the electrode 21d and the electrode 23, has at least an active layer. The light-receiving device 30PS functions as a photoelectric conversion device, generating charge from light incident on the light-receiving layer 35PS, which can be extracted as an electric current. At this time, a voltage may be applied between the electrode 21d and the electrode 23. The amount of charge generated is determined based on the amount of light incident on the light-receiving layer 35PS.

[0067] The light-receiving layer 35PS may further have one or more of the following: a hole transport layer, an electron transport layer, a layer containing a bipolar material (a material with high electron transport and hole transport properties), and a carrier block layer. The light-receiving layer 35PS may also have a layer containing a material that can be used as a hole injection layer. In the light-receiving device 30PS, this layer can function as a hole transport layer. The light-receiving layer 35PS may also have a layer containing a material that can be used as an electron injection layer. In the light-receiving device 30PS, this layer can function as an electron transport layer. It should be noted that a material with hole injection properties can also be said to have hole transport properties. A material with electron injection properties can also be said to have electron transport properties. Therefore, in this specification, a material with hole injection properties may be referred to as a material with hole transport properties. Similarly, a material with electron injection properties may be referred to as a material with electron transport properties.

[0068] The active layer contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In particular, it is preferable to use an organic photodiode having a layer containing an organic semiconductor as the light-receiving device 30PS. Organic photodiodes are easy to thin, lighten, and enlarge in area, and offer a high degree of freedom in shape and design, making them applicable to various display devices. Furthermore, by using an organic semiconductor, the EL layer of the light-emitting device 20 and the light-receiving layer of the light-receiving device 30PS can be formed using the same method (e.g., vacuum deposition), and common manufacturing equipment can be used, which is preferable.

[0069] In one aspect of the present invention, a display device uses organic EL devices as light-emitting devices 20R, 20G, and 20B, and preferably uses an organic photodiode as the light-receiving device 30PS. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device. In addition to the function of displaying images, the display device according to one aspect of the present invention also has one or both of the functions of imaging and sensing.

[0070] Electrodes 21a, 21b, 21c, and 21d are provided on the same plane. Figure 2A shows a configuration in which electrodes 21a, 21b, 21c, and 21d are provided on a substrate 50. Electrodes 21a, 21b, 21c, and 21d can be made from the same material. Furthermore, electrodes 21a, 21b, 21c, and 21d can be formed through the same process. For example, electrodes 21a, 21b, 21c, and 21d can be formed by processing a conductive film formed on the substrate 50 into island shapes. By forming electrodes 21a, 21b, 21c, and 21d in the same process, the productivity of the display device can be increased.

[0071] Electrodes 21a, 21b, 21c, and 21d can each be called pixel electrodes. Electrode 23 is a layer common to the light-emitting device 20R, light-emitting device 20G, light-emitting device 20B, and light-receiving device 30PS, and can be called a common electrode. Of the pixel electrodes and common electrodes, the electrodes on the side that emits or receives light should preferably use a conductive film that transmits visible light and infrared light. For the electrodes on the side that does not emit or receive light, it is preferable to use a conductive film that reflects visible light and infrared light.

[0072] Figure 2A schematically shows the configuration in which electrodes 21a, 21b, 21c, and 21d function as anodes and electrode 23 functions as a cathode in each of the light-emitting devices 20R, 20G, 20B, and 30PS. In Figure 2A, to make the orientation of the anode and cathode clearer, the circuit symbol for a light-emitting diode is shown to the left of the light-emitting device 20R, and the circuit symbol for a photodiode is shown to the right of the light-receiving device 30PS. In addition, electrons are indicated by circles with a minus sign (-), holes are indicated by circles with a plus sign (+), and the direction of electron and hole flow is schematically indicated by arrows.

[0073] In the light-emitting devices 20R, 20G, and 20B, electrodes 21a, 21b, and 21c, which function as anodes, are electrically connected to a first wiring that supplies a first potential. In the light-emitting devices 20R, 20G, 20B, and 30PS, electrode 23, which functions as a cathode, is electrically connected to a second wiring that supplies a second potential. The second potential is lower than the first potential. In the 30PS, electrode 21d, which functions as an anode, is electrically connected to a third wiring that supplies a third potential. Here, a reverse bias voltage is applied to the 30PS. That is, the third potential is lower than the second potential.

[0074] Figure 2B shows a specific example of the configuration shown in Figure 2A. In the light-emitting device 20R, the EL layer 25R is made up of a first layer 27a, a light-emitting layer 41R, and a second layer 29a stacked in that order. In the light-emitting device 20G, the EL layer 25G is made up of a first layer 27b, a light-emitting layer 41G, and a second layer 29b stacked in that order. In the light-emitting device 20B, the EL layer 25B is made up of a first layer 27c, a light-emitting layer 41B, and a second layer 29c stacked in that order.

[0075] In addition, the configuration of the light-emitting device 20R having a first layer 27a, a light-emitting layer 41R, and a second layer 29a provided between a pair of electrodes (electrode 21a and electrode 23) can function as a single light-emitting unit, and in this specification, the configuration of the light-emitting device 20R may be referred to as a single structure. The same applies to the light-emitting devices 20G and 20B.

[0076] The first layers 27a, 27b, and 27c are located on the side of electrodes 21a, 21b, and 21c, which function as anodes in the light-emitting devices 20R, 20G, and 20B. Each of the first layers 27a, 27b, and 27c can be a hole transport layer or a hole injection layer. Alternatively, each of the first layers 27a, 27b, and 27c may have a laminated structure of a hole injection layer and a hole transport layer on the hole injection layer. Furthermore, the hole injection layer may have a laminated structure, or the hole transport layer may have a laminated structure. Alternatively, each of the first layers 27a, 27b, and 27c may contain a material having hole transport properties and a material having hole injection properties. In this specification, the first layer 27a, the first layer 27b, and the first layer 27c may be referred to as functional layers.

[0077] The first layer 27a, the first layer 27b, and the first layer 27c can be made from the same material. Furthermore, the first layer 27a, the first layer 27b, and the first layer 27c can be formed through the same process. For example, the first layer 27a, the first layer 27b, and the first layer 27c can be formed by processing the film that will become the first layer 27a, the first layer 27b, and the first layer 27c. By forming the first layer 27a, the first layer 27b, and the first layer 27c in the same process, the productivity of the display device can be increased.

[0078] The second layers 29a, 29b, and 29c are located on the electrode 23 side, which functions as the cathode, in the light-emitting devices 20R, 20G, and 20B. The second layers 29a, 29b, and 29c can each be an electron transport layer or an electron injection layer. Alternatively, the second layers 29a, 29b, and 29c may each be a laminated structure of an electron transport layer and an electron injection layer on the electron transport layer. Furthermore, the electron injection layer may have a laminated structure, or the electron transport layer may have a laminated structure. Alternatively, the second layers 29a, 29b, and 29c may each contain an electron-transporting material and an electron-injecting material. In this specification, the second layers 29a, 29b, and 29c may be referred to as functional layers.

[0079] The second layer 29a, the second layer 29b, and the second layer 29c can be made from the same material. Furthermore, the second layer 29a, the second layer 29b, and the second layer 29c can be formed through the same process. For example, the second layer 29a, the second layer 29b, and the second layer 29c can be formed by processing the film that will become the second layer 29a, the second layer 29b, and the second layer 29c. By forming the second layer 29a, the second layer 29b, and the second layer 29c in the same process, the productivity of the display device can be increased.

[0080] As shown in Figure 2B, in the light-receiving device 30PS, the light-receiving layer 35PS has a third layer 37PS, an active layer 43PS, and a fourth layer 39PS stacked in this order.

[0081] The third layer 37PS, located on the electrode 21d side which functions as the anode of the photodetector 30PS, can be a hole transport layer. The hole transport material contained in the third layer 37PS may be different from the hole transport material contained in the first layers 27a, 27b, and 27c. It is preferable that the third layer 37PS of the photodetector 30PS be formed by a different process than the layers constituting the light-emitting device 20 (for example, the first layer 27a, 27b, and 27c). By forming it by a different process, a material more suitable for the photodetector 30PS can be applied to the third layer 37PS. In this specification, the third layer 37PS may be referred to as a functional layer.

[0082] The third layer 37PS can be made of the same material used in the first layer 27a, the first layer 27b, and the first layer 27c. The hole-transporting material contained in the third layer 37PS may be the same as the hole-transporting material contained in the first layer 27a, the first layer 27b, and the first layer 27c. The third layer 37PS may have a laminated structure.

[0083] The fourth layer 39PS, located on the electrode 23 side which functions as the cathode of the photodetector 30PS, can be an electron transport layer. The electron transport material contained in the fourth layer 39PS may be different from the electron transport material contained in the second layers 29a, 29b, and 29c. It is preferable that the fourth layer 39PS of the photodetector 30PS be formed by a different process than the layers constituting the light-emitting device 20 (for example, the second layer 29a, 29b, and 29c). By forming it by a different process, a material more suitable for the photodetector 30PS can be applied to the fourth layer 39PS. In this specification, the fourth layer 39PS may be referred to as a functional layer.

[0084] The fourth layer 39PS can be made of the same material used for the second layer 29a, the second layer 29b, and the second layer 29c. The electron-transporting material contained in the fourth layer 39PS may be the same as the electron-transporting material contained in the second layer 29a, the second layer 29b, and the second layer 29c. The fourth layer 39PS may have a laminated structure.

[0085] Furthermore, the third layer 37PS may have a layer that functions as a hole injection layer in the light-emitting device, that is, a layer containing a material with high hole injection capabilities. The hole injection layer can function as a hole transport layer in the photodetector. The fourth layer 39PS may have a layer that functions as an electron injection layer in the light-emitting device, that is, a layer containing a material with high electron injection capabilities. The electron injection layer can function as an electron transport layer in the photodetector.

[0086] As shown in Figure 2B and other figures, it is preferable that the EL layer 25R, EL layer 25G, EL layer 25B, and light-receiving layer 35PS do not have any common layers. Furthermore, it is preferable that the EL layer 25R, EL layer 25G, EL layer 25B, and light-receiving layer 35PS do not have any regions in contact with each other. In other words, it is preferable that the EL layer 25R, EL layer 25G, EL layer 25B, and light-receiving layer 35PS are separate.

[0087] Because the EL layers 25 of two adjacent light-emitting devices 20 are separated, leakage current between light-emitting devices can be suppressed. In other words, the phenomenon of light emitting from devices other than the desired one (also known as crosstalk) can be suppressed, resulting in a display device with high display quality.

[0088] Because the light-receiving layer 35PS of the light-receiving device 30PS is separated from the EL layer 25 of the adjacent light-emitting device 20, leakage current flowing from the light-emitting device 20 to the light-receiving device 30PS (also known as side leakage) can be suppressed. Therefore, a light-receiving device 30PS with a high signal-to-noise ratio (SNR) and high accuracy can be achieved.

[0089] In one embodiment of the present invention, side leakage between the light-emitting device 20 and the light-receiving device 30PS is suppressed, allowing the distance between the light-emitting device 20 and the light-receiving device 30PS to be narrowed. In other words, the ratio of the light-emitting device 20 and the light-receiving device 30PS to a pixel (hereinafter also referred to as the aperture ratio) can be increased. Furthermore, the size of the pixels can be reduced, and the resolution of the display device can be increased. Therefore, a display device with a light detection function and a high aperture ratio can be realized. Furthermore, a display device with a light detection function and high resolution can be realized.

[0090] The resolution of the light-receiving device 30PS is 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, more preferably 400 ppi or more, and even more preferably 500 ppi or more, and can be 2000 ppi or less, 1000 ppi or less, or 600 ppi or less, etc. In particular, by setting the resolution of the light-receiving device 30PS to 200 ppi or more and 600 ppi or less, preferably 300 ppi or more and 600 ppi or less, it can be suitably used for fingerprint imaging.

[0091] When performing fingerprint authentication using a display device according to one aspect of the present invention, increasing the resolution of the light-receiving device 30PS allows for the extraction of, for example, the feature points (Minutia) of the fingerprint with high precision, thereby improving the accuracy of fingerprint authentication. Furthermore, a resolution of 500 ppi or higher is preferable because it allows compliance with standards such as those of the National Institute of Standards and Technology (NIST). Assuming a resolution of 500 ppi for the light-receiving device, the size of each pixel becomes 50.8 μm, which is sufficient resolution for imaging the width of a fingerprint (typically between 300 μm and 500 μm).

[0092] [Configuration Example 2-2] Figure 2C shows a configuration different from those shown in Figures 2A and 2B. The display device shown in Figure 2C schematically illustrates a configuration in which, in the light-emitting devices 20R, 20G, and 20B, electrodes 21a, 21b, and 21c function as anodes, and electrode 23 functions as a cathode, and in the light-receiving device 30PS, electrode 21d functions as a cathode and electrode 23 functions as an anode.

[0093] In the light-emitting devices 20R, 20G, and 20B, electrodes 21a, 21b, and 21c, which function as anodes, are electrically connected to a first wiring that supplies a first potential. Electrode 23, which functions as a cathode in the light-emitting devices 20R, 20G, and 20B, and also functions as an anode in the light-receiving device 30PS, is electrically connected to a second wiring that supplies a second potential. The second potential is lower than the first potential. Electrode 21d, which functions as a cathode in the light-receiving device 30PS, is electrically connected to a third wiring that supplies a third potential. The third potential is higher than the second potential.

[0094] As shown in Figure 2C, the electrode 23, which functions as a common electrode, can be configured to function as either the anode or cathode in the light-emitting devices 20R, 20G, and 20B, and as the other anode or cathode in the light-receiving device 30PS. With this configuration, the potential difference between the pixel electrodes (electrodes 21a, 21b, and 21c) of the light-emitting device 20 and the pixel electrode (electrode 21d) of the light-receiving device 30PS can be reduced, and leakage between pixel electrodes (hereinafter also referred to as side leakage) can be suppressed. Therefore, a light-receiving device 30PS with a high signal-to-noise ratio and high accuracy can be obtained.

[0095] For example, the first potential (the potential supplied to electrodes 21a, 21b, and 21c) can be set to 12V, the second potential (the potential supplied to electrode 23) to 0V, and the third potential (the potential supplied to electrode 21d) to 4V. By using such a configuration, the potential difference between the pixel electrodes (electrodes 21a, 21b, and 21c) of the light-emitting device 20 and the pixel electrode (electrode 21d) of the light-receiving device 30PS can be reduced, thereby suppressing side leakage between the light-emitting device 20 and the light-receiving device 30PS.

[0096] Furthermore, since the difference between the highest and lowest potentials of the first, second, and third potentials can be reduced, a display device with low power consumption can be achieved.

[0097] A specific example of the configuration shown in Figure 2C is shown in Figure 2D. Detailed explanations of light-emitting devices 20R, 20G, and 20B are omitted as they can be found in the previously mentioned description.

[0098] The third layer 37PS, located on the electrode 21d side which functions as the cathode of the photodetector 30PS, can be an electron transport layer. The electron-transporting material contained in the third layer 37PS may be different from the electron-transporting materials contained in the second layers 29a, 29b, and 29c. The third layer 37PS can be made from the same material used for the second layers 29a, 29b, and 29c. The electron-transporting material contained in the third layer 37PS may be the same as the electron-transporting material contained in the second layers 29a, 29b, and 29c.

[0099] The fourth layer 39PS, located on the electrode 23 side which functions as the anode of the photodetector 30PS, can be a hole transport layer. The hole-transporting material contained in the fourth layer 39PS may be different from the hole-transporting materials contained in the first layers 27a, 27b, and 27c. The fourth layer 39PS can be made from the same material used for the first layers 27a, 27b, and 27c. The hole-transporting material contained in the fourth layer 39PS may be the same as the hole-transporting material contained in the first layers 27a, 27b, and 27c.

[0100] Furthermore, the third layer 37PS may have a layer that functions as an electron injection layer in the light-emitting device, that is, a layer containing a material with high electron injection potential. The fourth layer 39PS may have a layer that functions as a hole injection layer in the light-emitting device, that is, a layer containing a material with high hole injection potential.

[0101] In this embodiment, a configuration has been described in which electrodes 21a, 21b, and 21c function as anodes and electrode 23 functions as cathodes in the light-emitting device 20. However, the present invention is not limited to this configuration. In the light-emitting device 20, electrodes 21a, 21b, and 21c can function as cathodes and electrode 23 can function as anodes. In this case, the first layers 27a, 27b, and 27c can be either an electron transport layer or an electron injection layer, or both. The second layers 29a, 29b, and 29c can be either a hole transport layer or a hole injection layer, or both.

[0102] [Configuration Example 2-3] Figure 3A shows a configuration different from the one shown in Figure 2B. The light-emitting devices 20R, 20G, and 20B shown in Figure 3A have a first layer 27 instead of the first layers 27a, 27b, and 27c, and a second layer 29 instead of the second layers 29a, 29b, and 29c. The first layer 27 is a layer common to the light-emitting devices 20R, 20G, and 20B, and can be called the first common layer. Similarly, the second layer 29 is a layer common to the light-emitting devices 20R, 20G, and 20B, and can be called the second common layer.

[0103] As shown in Figure 3A, the first layer 27 located on the side of electrodes 21a, 21b, and 21c, which function as anodes for light-emitting devices 20R, 20G, and 20B, can be a hole transport layer or a hole injection layer. Alternatively, the first layer 27 may be a laminated structure of a hole injection layer and a hole transport layer on the hole injection layer. A detailed explanation of the first layer 27 is omitted as it can be found in the descriptions of the first layer 27a, the first layer 27b, and the first layer 27c.

[0104] The second layer 29, located on the electrode 23 side which functions as the cathode of the light-emitting devices 20R, 20G, and 20B, can be an electron transport layer or an electron injection layer. Alternatively, the second layer 29 may have a laminated structure of an electron transport layer and an electron injection layer on the electron transport layer. A detailed explanation of the second layer 29 is omitted as it can be found in the descriptions of the second layer 29a, the second layer 29b, and the second layer 29c.

[0105] Furthermore, a third common layer may be provided between electrode 23 and the second layer 29, and between electrode 23 and the fourth layer 39PS. The third common layer may, for example, have an electron injection layer. Alternatively, the third common layer may have a laminated structure of an electron transport layer and an electron injection layer on the electron transport layer. The third common layer is a layer common to the light-emitting device 20R, light-emitting device 20G, light-emitting device 20B, and light-receiving device 30PS. When an electron injection layer is used for the third common layer, the electron injection layer functions as an electron transport layer in the light-receiving device 30PS.

[0106] Furthermore, as shown in Figure 3B, the light-receiving device 30PS may be configured such that electrode 21d functions as the cathode and electrode 23 functions as the anode.

[0107] Furthermore, a third common layer may be provided between the electrode 23 and the second layer 29, and between the electrode 23 and the fourth layer 39PS. Since the third common layer can be described in the preceding section, a detailed explanation is omitted. Note that if an electron injection layer is used for the third common layer, the electron injection layer does not need to have a specific function in the photodetector 30PS.

[0108] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0109] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 10 -6 cm 2Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials are those with high hole transport capabilities, such as π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton).

[0110] In a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron injection layer. In a light-receiving device, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material has a density of 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Electron transport materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0111] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof can be used as the material with high electron injection properties. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as the material with high electron injection properties.

[0112] The electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may have a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0113] Alternatively, the electron injection layer may be made of an electron-transporting material. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0114] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0115] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0116] The charge generation layer can preferably use a material applicable to the electron injection layer, such as lithium. Alternatively, the charge generation layer can preferably use a material applicable to the hole injection layer. Furthermore, the charge generation layer can include a layer containing a hole transport material and an acceptor material (electron-accepting material). Alternatively, the charge generation layer can include a layer containing an electron transport material and a donor material. By forming a charge generation layer having such layers, the increase in driving voltage when light-emitting units are stacked can be suppressed.

[0117] The active layer contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0118] As a material for the n-type semiconductor in the active layer, fullerene (e.g., C 60 , C 70Examples of electron-accepting organic semiconductor materials include fullerenes, fullerene derivatives, etc. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Due to the deep LUMO level, fullerenes have extremely high electron-accepting (acceptor) properties. Usually, like benzene, when π-electron conjugation (resonance) spreads in a plane, the electron-donating (donor) property increases. However, because fullerenes have a spherical shape, despite the large spread of π-electron conjugation, their electron-accepting property is high. A high electron-accepting property is beneficial for light-receiving devices because it enables efficient charge separation at high speed. C 60 , C 70 Both have broad absorption bands in the visible light region. In particular, C 70 is preferred because it has a larger π-electron conjugation system than C 60 and also has a broad absorption band in the long wavelength region. In addition, examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C60 (abbreviation: ICBA), etc.

[0119] Examples of n-type semiconductor materials include perylene tetracarboxylic acid derivatives such as N,N’-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0120] Examples of n-type semiconductor materials include 2,2’-(bis(thiophene-5,2-diyl))bis(methan-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0121] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0122] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0123] Examples of materials for p-type semiconductors include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Furthermore, examples of materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0124] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0125] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0126] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0127] The light-emitting device and the light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device and the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating, respectively.

[0128] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0129] The active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method can be used in which an acceptor material is dispersed in PBDB-T or a PBDB-T derivative.

[0130] A more specific configuration example of a display device according to one aspect of the present invention will be described.

[0131] <Configuration Example 3> [Configuration Example 3-1] Figure 4A shows a schematic top view illustrating an example configuration of a display device 100A according to one aspect of the present invention. The display device 100A has a display unit in which a plurality of pixels 103 are arranged in a matrix, and a connection unit 140 outside the display unit.

[0132] Each pixel 103 has multiple subpixels. Figure 4A shows an example where pixel 103 has subpixels 120R, 120G, 120B, and 130. Subpixel 120R has a light-emitting device 110R that emits red light. Subpixel 120G has a light-emitting device 110G that emits green light. Subpixel 120B has a light-emitting device 110B that emits blue light. Subpixel 130 has a light-receiving device 150. In Figure 4A, the labels R, G, and B are added to the light-emitting area of ​​the light-emitting device 110 for easier identification of each device. The label PS is added to the light-receiving area of ​​the light-receiving device 150.

[0133] Figure 4B shows cross-sectional views corresponding to the dashed lines A1-A2 and D1-D2 in Figure 4A. The light-emitting devices 110R, 110G, 110B, and 150 are provided on the substrate 101.

[0134] In this specification, for example, when we refer to "B on A" or "B below A," it is not necessarily required that A and B have areas in contact.

[0135] Light-emitting device 110R has an electrode 111a, a first layer 115a, a light-emitting layer 112R, a second layer 116a, and a common electrode 123. Light-emitting device 110G has an electrode 111b, a first layer 115b, a light-emitting layer 112G, a second layer 116b, and a common electrode 123. Light-emitting device 110B has an electrode 111c, a first layer 115c, a light-emitting layer 112B, a second layer 116c, and a common electrode 123. Light-receiving device 150 has an electrode 111d, a third layer 155, an active layer 157, a fourth layer 156, and a common electrode 123. Electrodes 111a, 111b, 111c, and 111d function as pixel electrodes.

[0136] Light-emitting devices 110R, 110G, and 110B can be configured to match the configurations of light-emitting devices 20R, 20G, and 20B described above. Light-receiving device 150 can be configured to match the configuration of light-receiving device 30PS described above.

[0137] The common electrode 123 is provided in common to both the light-emitting device and the light-receiving device. The elements constituting the light-emitting device and the light-receiving device other than the common electrode 123 are not common to the light-emitting device and the light-receiving device, and are provided separately.

[0138] Specifically, electrodes 111a, 111b, 111c, and 111d are not common to the light-emitting device 110 and the light-receiving device 150, and are provided separately. The first layers 115a, 115b, and 115c are not common to the light-emitting device 110, and are provided separately. Similarly, the light-emitting layers 112R, 112G, and 112B are not common to the light-emitting device 110, and are provided separately. Similarly, the second layers 116a, 116b, and 116c are not common to the light-emitting device 110, and are provided separately.

[0139] The third layer 155, the active layer 157, and the fourth layer 156 of the light-receiving device 150 are not shared with the light-emitting device 110 and are provided separately. By providing the third layer 155, the active layer 157, and the fourth layer 156 of the light-receiving device 150 separately from the light-emitting device 110, leakage current flowing from the light-emitting device 110 to the light-receiving device 150 can be suppressed. Therefore, a light-receiving device 150 with a high signal-to-noise ratio and high accuracy can be obtained.

[0140] It is preferable that the third layer 155 of the light-receiving device 150 be formed by a different process than the functional layers of the light-emitting device 110 (for example, the first layer 115a, the first layer 115b, and the first layer 115c). By forming it by a different process, a material more suitable for the light-receiving device 150 can be applied to the third layer 155. In other words, the third layer 155 can have an organic compound different from the organic compound in the functional layers of the light-emitting device 110.

[0141] Similarly, it is preferable that the fourth layer 156 of the light-receiving device 150 be formed by a different process than the functional layers of the light-emitting device 110 (for example, the second layer 116a, the second layer 116b, and the second layer 116c). By forming it by a different process, a material more suitable for the light-receiving device 150 can be applied to the fourth layer 156. In other words, the fourth layer 156 can have an organic compound different from the organic compound of the functional layer of the light-emitting device 110.

[0142] An insulating layer 131 is provided to cover the ends of electrode 111a, electrode 111b, electrode 111c, and electrode 111d. The ends of the insulating layer 131 are preferably tapered. The insulating layer 131 may be omitted if it is not needed.

[0143] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90 degrees.

[0144] The first layer 115a, the first layer 115b, the first layer 115c, and the third layer 155 each have a region in contact with the upper surface of the electrode 111 and a region in contact with the surface of the insulating layer 131. The ends of the first layer 115a, the first layer 115b, the first layer 115c, and the third layer 155 are located on the insulating layer 131.

[0145] A conductive film that is transparent to visible light is used on either electrode 111 or common electrode 123, and a conductive film that is reflective is used on the other. By using a conductive film that is transparent to visible light on electrode 111 and a conductive film that is reflective on common electrode 123, the display device 100A can be made into a bottom-emission type display device. On the other hand, by using a conductive film that is reflective on electrode 111 and a conductive film that is transparent to visible light on common electrode 123, the display device 100A can be made into a top-emission type display device. Furthermore, by using conductive films that are transparent to visible light on both electrode 111 and common electrode 123, the display device 100A can also be made into a dual-emission type display device.

[0146] A protective layer 125 is provided on the common electrode 123. The protective layer 125 has the function of preventing impurities such as water from diffusing to each light-emitting device from above.

[0147] The protective layer 125 can be a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 125.

[0148] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0149] A laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 125. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 125 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array, etc.) is provided above the protective layer 125.

[0150] As shown in Figure 4B, the connection portion 140 has a common electrode 123 and a connecting electrode 111p. The connection portion 140 can be called a cathode contact portion. The connecting electrode 111p can be made of the same material as electrodes 111a, 111b, 111c, and 111d. The connecting electrode 111p can also be formed by the same process as electrodes 111a, 111b, 111c, and 111d. An insulating layer 131 is provided to cover the end of the connecting electrode 111p. A protective layer 125 is provided to cover the common electrode 123.

[0151] Figure 4A shows an example where the connection portion 140 is located to the right of the display portion in a top view, but the position of the connection portion 140 is not particularly limited. The connection portion 140 only needs to be provided in at least one place on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. Furthermore, there may be one or more connection portions 140.

[0152] The connecting portion 140 can be provided along the outer circumference of the display unit. For example, it may be provided along one side of the outer circumference of the display unit, or it may be provided across two or more sides of the outer circumference of the display unit. Furthermore, the shape of the upper surface of the connecting portion 140 is not particularly limited. If the upper surface shape of the display unit is rectangular, the upper surface shape of the connecting portion 140 can be, for example, a strip, an L-shape, a square bracket shape, or a rectangle.

[0153] Figure 5A shows an enlarged view of region P, indicated by the dashed line in Figure 4B, and Figure 5B shows an enlarged view of region Q. Figure 5A shows the light-emitting device 110B on the left and the light-receiving device 150 on the right. Figure 5B shows the light-emitting device 110G on the left and the light-emitting device 110B on the right.

[0154] As shown in Figure 5A, in the light-emitting device 110B, the edge of the light-emitting layer 112B is located inward from the edge of the first layer 115c. Also, the edge of the light-emitting layer 112B is located inward from the edge of the second layer 116c. The top and side surfaces of the light-emitting layer 112B are in contact with the second layer 116c. In other words, the top and side surfaces of the light-emitting layer 112B are covered by the second layer 116c. By covering the top and side surfaces of the light-emitting layer 112B with the second layer 116c, the diffusion of impurities into the light-emitting layer 112B can be suppressed. Therefore, the reliability of the light-emitting device 110B can be improved. Such impurities include, for example, metallic components contained in the common electrode 123.

[0155] The side surface of the light-emitting layer 112B is preferably tapered. The angle θ formed between the side surface of the light-emitting layer 112B and the surface to be formed (in this case, the first layer 115c) 112B It is preferable that it be small. Specifically, angle θ 112BThe angle θ is preferably greater than 0 degrees and less than 90 degrees, more preferably greater than 0 degrees and less than 60 degrees, more preferably greater than 0 degrees and less than 50 degrees, more preferably greater than 0 degrees and less than 40 degrees, and more preferably greater than 0 degrees and less than 30 degrees. 112B By reducing the step coverage of the light-emitting layer 112B and the layer formed on the first layer 115c (for example, the second layer 116c), the occurrence of defects such as step breaks or porosity in the layer can be suppressed.

[0156] The light-emitting layer 112B can be formed using an FMM. The light-emitting layer 112B formed using an FMM becomes thinner towards the edges, and the angle θ 112B In some cases, it can become extremely small. For example, angle θ 112B The temperature can be greater than 0 degrees and less than 30 degrees. As a result, the side and top surfaces of the light-emitting layer 112B may be continuously connected, making it difficult to clearly distinguish between the side and top surfaces.

[0157] The edges of the second layer 116c coincide with or roughly coincide with the edges of the first layer 115c. In other words, the top shape of the second layer 116c coincides with or roughly coincides with that of the first layer 115c. For example, the first layer 115c and the second layer 116c can be formed by first forming a first film which will become the first layer 115c and a second film which will become the second layer 116c, and then processing using the same mask.

[0158] In this specification, "matching or roughly matching top surface shapes" means that at least a portion of the contours overlap between stacked layers. For example, this includes cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case, it is also referred to as "matching or roughly matching top surface shapes."

[0159] The sides of the first layer 115c and the second layer 116c are preferably perpendicular or approximately perpendicular to their respective surfaces. For example, the angle θ between the side of the first layer 115c and the surface to be formed (in this case, the insulating layer 131) 115c The angle θ is preferably between 60 and 90 degrees. The angle θ is formed between the side surface of the second layer 116c and the surface to be formed (in this case, the first layer 115c). 116c The temperature is preferably between 60 and 90 degrees.

[0160] Although the explanation here uses the light-emitting device 110B as an example, the same applies to the light-emitting devices 20R and 20B.

[0161] As shown in Figure 5A, in the light-receiving device 150, the edges of the third layer 155, the active layer 157, and the fourth layer 156 coincide or roughly coincide with each other. In other words, the top shapes of the third layer 155, the active layer 157, and the fourth layer 156 coincide or roughly coincide with each other. For example, the third layer 155, the active layer 157, and the fourth layer 156 can be formed by first forming the third film which becomes the third layer 155, the active film which becomes the active layer 157, and the fourth film which becomes the fourth layer 156, and then processing them using the same mask.

[0162] The sides of the third layer 155, the active layer 157, and the fourth layer 156 are preferably perpendicular or approximately perpendicular to their respective surfaces. For example, the angle θ between the side of the third layer 155 and the surface to be formed (in this case, the insulating layer 131) 155 The angle θ between the side surface of the active layer 157 and the surface to be formed (in this case, the third layer 155) is preferable. 157 The angle θ between the side surface of the fourth layer 156 and the surface to be formed (in this case, the active layer 157) is preferable. 156 The angle is preferably between 60 and 90 degrees. 155 is, angle θ 156 , and angle θ 157 Each of these is the angle θ. 112B A larger value is preferable. Similarly, angle θ 155 is, angle θ 156 , and angle θ157 It is preferable that each of these angles is greater than the angle formed between the side surface of the light-emitting layer 112R and the surface to be formed. 155 is, angle θ 156 , and angle θ 157 Preferably, each of these values ​​is greater than the angle formed between the side surface of the light-emitting layer 112G and the surface to be formed.

[0163] As shown in Figure 5A, it is preferable that the light-receiving layer 177 of the light-receiving device 150 does not have a layer in common with the EL layer 175B of the light-emitting device 110B, and does not have a region in contact with the EL layer 175B. In other words, it is preferable that the light-receiving layer 177 is separated from the EL layer 175B. Although Figure 5A shows the light-emitting device 110B as a light-emitting device adjacent to the light-receiving device 150, it is not limited to this. It is preferable that the light-receiving layer of a light-receiving device is separated from the EL layer of a light-emitting device adjacent to that light-receiving device. Similarly, when two light-receiving devices are adjacent to each other, it is preferable that the light-receiving layer of one light-receiving device is separated from the light-receiving layer of the other light-receiving device.

[0164] As shown in Figure 5B, it is preferable that the EL layer 175G of the light-emitting device 110G does not have a layer in common with the EL layer 175B of the light-emitting device 110B, and does not have a region in contact with the EL layer 175B. In other words, it is preferable that the EL layer 175G is separated from the EL layer 175B. Note that Figure 5B shows the light-emitting device 110B as a light-emitting device adjacent to the light-emitting device 110G, but is not limited to this. It is preferable that the EL layer of the light-emitting device is separated from the EL layer of the light-emitting device and the EL layers of adjacent light-emitting devices.

[0165] [Configuration Example 3-2] Figure 6A shows a configuration different from the one shown in Figure 4B. The light-emitting devices 110R, 110G, and 110B shown in Figure 6A differ from the configuration shown in Figure 4B mainly in that the light-emitting layers 112R, 112G, and 112B each have regions that are in contact with the common electrode 123. In this specification, the light-emitting layers 112R, 112G, and 112B may be collectively referred to as the light-emitting layer 112.

[0166] Specifically, in the light-emitting device 110R, the edges of the first layer 115a, the light-emitting layer 112R, and the second layer 116a coincide or roughly coincide with each other. In other words, the top shapes of the first layer 115a, the light-emitting layer 112R, and the second layer 116a coincide or roughly coincide with each other. The same applies to the light-emitting devices 110G and 110B. By adopting this configuration, the area of ​​the light-emitting layer 112 can be increased, and the area of ​​the light-emitting region of the light-emitting device 110 can be increased. In other words, a display device with a high aperture ratio can be made.

[0167] Figure 6B shows an enlarged view of region P1, indicated by the dashed line in Figure 6A, and Figure 6C shows an enlarged view of region Q1. Figure 6B shows the light-emitting device 110B on the left and the light-receiving device 150 on the right. Figure 6C shows the light-emitting device 110G on the left and the light-emitting device 110B on the right.

[0168] As shown in Figure 6B, in the light-emitting device 110B, it is preferable that the sides of the first layer 115c and the light-emitting layer 112B are perpendicular or approximately perpendicular to their respective surfaces. For example, the angle θ between the side of the first layer 115c and the surface to be formed (in this case, the insulating layer 131) 115c The angle θ is preferably between 60 and 90 degrees. The angle θ is formed between the side surface of the light-emitting layer 112B and the surface to be formed (in this case, the first layer 115c). 112B The temperature is preferably between 60 and 90 degrees. Note that the film thickness near the edge of the light-emitting layer 112B may be thinner than the film thickness inside that edge.

[0169] As shown in Figure 6C, in the light-emitting device 110G, it is preferable that the sides of the first layer 115b and the light-emitting layer 112G are perpendicular or approximately perpendicular to their respective surfaces. For example, the angle θ between the side of the first layer 115b and the surface to be formed (in this case, the insulating layer 131) 115b The angle θ is preferably between 60 and 90 degrees. The angle θ is formed between the side surface of the light-emitting layer 112G and the surface to be formed (in this case, the first layer 115b). 112G The temperature is preferably between 60 and 90 degrees. Note that the film thickness near the edge of the light-emitting layer 112G may be thinner than the film thickness inside that edge. The same applies to the light-emitting device 110R.

[0170] [Configuration Example 3-3] Figure 7A shows a configuration different from the one shown in Figure 4B. The light-emitting devices 110R, 110G, and 110B shown in Figure 7A differ from the configuration shown in Figure 4B mainly in that they have a first layer 115 instead of the first layers 115a, 115b, and 115c, and a second layer 116 instead of the second layers 116a, 116b, and 116c.

[0171] Specifically, the light-emitting device 110R has an EL layer consisting of a first layer 115, a light-emitting layer 112R, and a second layer 116, stacked in this order. The light-emitting device 110G has an EL layer consisting of a first layer 115, a light-emitting layer 112G, and a second layer 116, stacked in this order. The light-emitting device 110B has an EL layer consisting of a first layer 115, a light-emitting layer 112B, and a second layer 116, stacked in this order.

[0172] The first layer 115 is a layer common to the light-emitting devices 110R, 110G, and 110B, and can be called the first common layer. Similarly, the second layer 116 can be called the second common layer. The first layer 115 can be made of the same material that can be used for the first layer 115a, the first layer 115b, and the first layer 115c. The second layer 116 can be made of the same material that can be used for the second layer 116a, the second layer 116b, and the second layer 116c.

[0173] Figure 7B shows an enlarged view of region R, indicated by the dashed line in Figure 7A, and Figure 7C shows an enlarged view of region S. Figure 7B shows the light-emitting device 110B on the left and the light-receiving device 150 on the right. Figure 7C shows the light-emitting device 110G on the left and the light-emitting device 110B on the right.

[0174] As shown in Figure 7B, it is preferable that the light-receiving layer 177 of the light-receiving device 150 does not have a layer in common with the EL layer 175B of the light-emitting device 110B, and does not have a region in contact with the EL layer 175B. In other words, it is preferable that the light-receiving layer of a light-receiving device is separated from the EL layer of an adjacent light-emitting device. Similarly, when two light-receiving devices are adjacent to each other, it is preferable that the light-receiving layer of one light-receiving device is separated from the light-receiving layer of the other light-receiving device.

[0175] As shown in Figure 7B, the edges of the second layer 116 coincide with or roughly coincide with the edges of the first layer 115. In other words, the top shape of the second layer 116 coincides with or roughly coincides with that of the first layer 115. For example, the first layer 115 and the second layer 116 can be formed by first forming a first film which will become the first layer 115 and a second film which will become the second layer 116, and then processing them using the same mask.

[0176] The sides of the first layer 115 and the second layer 116 are preferably perpendicular or approximately perpendicular to their respective surfaces. For example, the angle θ between the side of the first layer 115 and the surface to be formed (in this case, the insulating layer 131) 115 The angle θ is preferably between 60 and 90 degrees. The angle θ is formed between the side surface of the second layer 116 and the surface to be formed (in this case, the first layer 115). 116 The temperature is preferably between 60 and 90 degrees.

[0177] As shown in Figure 7C, the light-emitting layer 112G of the light-emitting device 110G shares the EL layer 175B of the light-emitting device 110B with the first layer 115 and the second layer 116. Although Figure 7C shows the light-emitting device 110B as an adjacent light-emitting device to the light-emitting device 110G, the same applies to any other two adjacent light-emitting devices. Two adjacent light-emitting devices can be configured to share the first layer 115 and the second layer 116.

[0178] [Configuration Example 3-4] Figure 8A shows configurations different from those shown in Figure 4B. The light-emitting devices 110R, 110G, and 110B shown in Figure 8A mainly differ from the configuration shown in Figure 4B in that they have an optical adjustment layer between the pixel electrode and the EL layer. The light-receiving device 150 mainly differs from the configuration shown in Figure 4B in that it has an optical adjustment layer between the pixel electrode and the light-receiving layer. Specifically, the light-emitting device 110R has an optical adjustment layer 180a between the electrode 111a and the first layer 115a. The light-emitting device 110G has an optical adjustment layer 180b between the electrode 111b and the first layer 115b. The light-emitting device 110B has an optical adjustment layer 180c between the electrode 111c and the first layer 115c. The light-receiving device 150 has an optical adjustment layer 180d between the electrode 111d and the third layer 155. Furthermore, the connection portion 140 has a conductive layer 180p between the connecting electrode 111p and the common electrode 123. The conductive layer 180p can be formed by processing conductive films that become optical adjustment layers 180a, 180b, 180c, and 180d. In the connection portion 140, the connecting electrode 111p and the common electrode 123 are electrically connected via the conductive layer 180p.

[0179] It is preferable that optical adjustment layers 180a, 180b, 180c, and 180d use conductive materials with high transmittance to visible light. It is even more preferable that optical adjustment layers 180a, 180b, 180c, and 180d use conductive materials with high transmittance to both visible and infrared light. Optical adjustment layers 180a, 180b, 180c, and 180d can use conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, indium tin oxide containing silicon, and indium zinc oxide containing silicon.

[0180] Here, electrodes 111a, 111b, 111c, and 111d are made of conductive films that are reflective to visible light, and the common electrode 123 is made of conductive films that are both reflective and transparent to visible light. As a result, the light-emitting devices 110R, 110G, 110B, and 150 have a so-called microcavity structure (micro-resonator structure). Light-emitting devices 110R, 110G, and 110B can be made into light-emitting devices with high color purity by intensifying light of a specific wavelength. The light-receiving device 150 can be made into a light-receiving device with high sensitivity by intensifying light of a specific wavelength that is to be detected.

[0181] Furthermore, by varying the film thickness of optical adjustment layers 180a, 180b, 180c, and 180d, the respective optical path lengths can be varied. Each optical adjustment layer may use conductive films of different thicknesses, or its structure may differ between a single-layer structure and a multi-layer structure.

[0182] [Configuration Example 3-5] Figure 8B shows a configuration different from that shown in Figure 4B. The display device shown in Figure 8B differs from the display device shown in Figure 4B mainly in that it has a resin layer 184 between two adjacent light-emitting devices and between an adjacent light-emitting device and a light-receiving device. Similarly, when the two light-receiving devices are adjacent, a resin layer 184 may also be provided between two adjacent light-emitting devices.

[0183] Figure 8C shows an enlarged view of region T indicated by the dashed line in Figure 8B. Figure 8C shows the light-emitting device 110B on the left and the light-receiving device 150 on the right. An insulating layer 182 may be provided between the light-emitting device 110B and the resin layer 184, and between the light-receiving device 150 and the resin layer 184. The insulating layer 182 is provided along the side surface of the EL layer 175B, the side surface of the light-receiving layer 177, and the upper surface of the insulating layer 131. The resin layer 184 has the function of filling the recess located between the light-emitting device 110B and the light-receiving device 150 and flattening its upper surface. By providing the resin layer 184, the step coverage of the common electrode 123 and the protective layer 125 formed thereon can be improved. Since the insulating layer 182 is provided in contact with the side surface of the EL layer 175B and the side surface of the light-receiving layer 177, a structure can be created in which these layers and the resin layer 184 do not come into contact. When the EL layer 175B and the light-receiving layer 177 come into contact with the resin layer 184, the components contained in the resin layer 184 (for example, organic solvents) may dissolve the EL layer 175B and the light-receiving layer 177. By providing an insulating layer 182, the sides of the EL layer 175B and the sides of the light-receiving layer 177 can be protected. It is particularly preferable that the insulating layer 182 covers the sides of the active layer 157. However, a configuration without an insulating layer 182 is also possible.

[0184] The insulating layer 182 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 182. The insulating layer 182 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, by applying inorganic insulating films such as aluminum oxide film, hafnium oxide film, and silicon oxide film formed by the ALD method to the insulating layer 182, an insulating layer 182 with fewer pinholes and excellent function in protecting the EL layer can be formed.

[0185] The insulating layer 182 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 182 using the ALD method, which provides good coverage.

[0186] The resin layer 184 can suitably be an insulating layer having an organic material. For example, the resin layer 184 can be acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the resin layer 184 may be an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0187] The resin layer 184 can be made of a photosensitive resin. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material. Furthermore, by using a colored material (for example, a material containing black pigment) as the resin layer 184, a function may be provided to block stray light from adjacent pixels and suppress color mixing. In addition, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) may be provided between the insulating layer 182 and the resin layer 184 to reflect the light emitted from the light-emitting layer with the reflective film, thereby improving the light extraction efficiency.

[0188] The upper surface of the resin layer 184 is preferably as flat as possible, but the surface may have a gently curved shape. The upper surface of the resin layer 184 may, for example, have a wave-like shape with recesses and protrusions, a convex surface, a concave surface, or a flat surface.

[0189] [Configuration Example 3-6] Figure 9A shows a configuration different from the one shown in Figure 7A. The light-emitting devices 110R, 110G, and 110B shown in Figure 9A differ from the configuration shown in Figure 4B mainly in the shape of the side surfaces of the first layer 115 and the second layer 116.

[0190] Figure 9B shows an enlarged view of region V, indicated by the dashed line in Figure 9A. For an enlarged view of region S, please refer to Figure 7C. Figure 9B shows the light-emitting device 110B on the left and the light-receiving device 150 on the right. Figure 7C shows the light-emitting device 110G on the left and the light-emitting device 110B on the right.

[0191] The side surface of the first layer 115 has a tapered shape. The angle θ between the side surface of the first layer 115 and the surface to be formed (in this case, the insulating layer 131) 115 It is preferable that it be small. Specifically, angle θ 115The angle θ is preferably greater than 0 degrees and less than 90 degrees, more preferably greater than 0 degrees and less than 60 degrees, more preferably greater than 0 degrees and less than 50 degrees, more preferably greater than 0 degrees and less than 40 degrees, and more preferably greater than 0 degrees and less than 30 degrees. 115 By reducing the step coverage of the insulating layer 131 and the layer formed on the first layer 115 (for example, the second layer 116), the step coverage is improved, and defects such as step breakage or porosity in the layer can be suppressed.

[0192] The side surface of the second layer 116 has a tapered shape. The angle θ formed between the side surface of the second layer 116 and the surface to be formed (in this case, the first layer 115) 116 It is preferable that it be small. Specifically, angle θ 116 The angle θ is preferably greater than 0 degrees and less than 90 degrees, more preferably greater than 0 degrees and less than 60 degrees, more preferably greater than 0 degrees and less than 50 degrees, more preferably greater than 0 degrees and less than 40 degrees, and more preferably greater than 0 degrees and less than 30 degrees. 116 By reducing the step coverage of the layer formed on the first layer 115 and the second layer 116 (for example, the common electrode 123), the step coverage is improved, and defects such as step breakage or porosity in the layer can be suppressed.

[0193] As shown in Figure 9B, the edge of the second layer 116 is located inward from the edge of the first layer 115. Alternatively, the edge of the second layer 116 may coincide with or roughly coincide with the edge of the first layer 115.

[0194] <Example of manufacturing method 1> In the following, an example of a method for manufacturing a display device according to one aspect of the present invention will be described with reference to the drawings. Here, the method for manufacturing the display device 100 shown in Figure 4B will be described as an example. Figures 10A to 13D are schematic cross-sectional views of each step in the method for manufacturing the display device 100. Figures 10A to 13D show the cross-sections corresponding to the dashed lines A1-A2 and D1-D2 in Figure 4A.

[0195] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed using methods such as sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD method is metal-organic CVD (MOCVD).

[0196] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute a display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0197] When processing the thin films that constitute the display device, photolithography or the like can be used. Alternatively, the thin films may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like.

[0198] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0199] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light, X-rays, etc., may be used as the light for exposure. An electron beam can also be used instead of the light used for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it enables extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0200] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0201] [Formation of electrodes 111a to 111d and connecting electrode 111p] Electrodes 111a, 111b, 111c, 111d, and a connecting electrode 111p are formed on the substrate 101. First, a conductive film is deposited, a resist mask is formed by photolithography, and unnecessary parts of the conductive film are removed by etching. Then, by removing the resist mask, electrodes 111a, 111b, 111c, and a connecting electrode 111p can be formed.

[0202] When using a conductive film that is reflective to visible light for each pixel electrode, it is preferable to use a material (for example, silver or aluminum) that has the highest possible reflectivity across the entire wavelength range of visible light. This not only improves the light extraction efficiency of the light-emitting device but also enhances color reproduction.

[0203] [Formation of insulating layer 131] Next, an insulating layer 131 is formed by covering the ends of electrodes 111a, 111b, 111d, 111c, and the connecting electrode 111p (Figure 10A). The insulating layer 131 can be an organic insulating film or an inorganic insulating film. It is preferable to tapered the ends of the insulating layer 131 in order to improve the step coverage of the subsequent film. In particular, when using an organic insulating film, it is preferable to use a photosensitive material because it is easier to control the shape of the ends depending on the exposure and development conditions. An inorganic insulating film may also be used as the insulating layer 131. By using an inorganic insulating film as the insulating layer 131, the display device 100 can be made into a high-definition display device.

[0204] [Formation of functional membrane 155f, active membrane 157f, and functional membrane 156f] Next, a functional film 155f, which will later become the third layer 155, an active film 157f, which will become the active layer 157, and a functional film 156f, which will become the fourth layer 156, are deposited in this order on electrodes 111a, 111b, 111c, 111d, and the insulating layer 131. The functional film 155f, active film 157f, and functional film 156f can each be formed by, for example, vapor deposition, sputtering, or inkjet. However, the above-described film deposition methods can be used as appropriate. In this specification, the functional film 155f, active film 157f, and functional film 156f may be collectively referred to as the photodetector film.

[0205] It is preferable that the functional film 155f, the active film 157f, and the functional film 156f are formed so as not to be present on the connecting electrode 111p. For example, when the functional film 155f, the active film 157f, and the functional film 156f are formed by vapor deposition or sputtering, a shielding mask can be used to prevent the functional film 155f, the active film 157f, and the functional film 156f from being deposited on the connecting electrode 111p.

[0206] [Formation of sacrificial film 128f and sacrificial film 129f] Next, a sacrificial film 128f and a sacrificial film 129f are formed on the functional film 156f in that order (Figure 10B). The sacrificial film 128f is provided in contact with the upper surface of the connecting electrode 111p.

[0207] The sacrificial film 128f can preferably be a film with high resistance to etching of the functional film 156f, the active film 157f, and the functional film 155f, i.e., a film with a high etching selectivity ratio. Furthermore, the sacrificial film 128f can preferably be a film with a high etching selectivity ratio with respect to the sacrificial film 129f, which will be described later. Moreover, it is particularly preferable that the sacrificial film 128f be a film that can be removed by a wet etching method that causes less damage to the functional film 156f, the active film 157f, and the functional film 155f.

[0208] The sacrificial film 128f can be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic film such as an inorganic insulating film. The sacrificial film 128f can be formed by various film deposition methods such as sputtering, vapor deposition, CVD, and ALD. In particular, since the ALD method causes little film deposition damage to the layer to be formed, it is preferable to form the sacrificial film 128f directly on the functional film 156f using the ALD method.

[0209] The sacrificial film 128f can be made of a metallic material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or an alloy material containing such a metallic material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0210] The sacrificial film 128f can be made of metal oxides such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO). Furthermore, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide, also written as ITO), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (InGa-Sn-Zn oxide), etc. can also be used. Alternatively, indium tin oxide containing silicon can also be used.

[0211] Furthermore, the above-mentioned method can also be applied when element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) is used instead of gallium. In particular, it is preferable that element M be one or more selected from gallium, aluminum, or yttrium.

[0212] The sacrificial film 128f can be an oxide such as aluminum oxide, hafnium oxide, or silicon oxide; a nitride such as silicon nitride or aluminum nitride; or an oxynitride such as silicon oxynitride. Such inorganic insulating materials can be formed using sputtering, CVD, or ALD methods.

[0213] It is preferable to use a material that is soluble in a chemically stable solvent relative to at least the functional film 156f as the sacrificial film 128f. In particular, a material soluble in water or alcohol can be suitably used for the sacrificial film 128f. When forming the sacrificial film 128f, it is preferable to apply it using a wet deposition method while dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the functional film 156f, the activated film 157f, and the functional film 155f.

[0214] Wet film deposition methods that can be used to form the sacrificial film 128f include, for example, spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0215] The sacrificial film 128f can be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0216] The sacrificial film 129f is used as a hard mask when etching the sacrificial film 128f later. Also, when processing the sacrificial film 129f later, the sacrificial film 128f will be exposed. Therefore, the sacrificial film 128f and the sacrificial film 129f are selected as a combination of films with a high etching selectivity ratio for each other. Thus, the film that can be used for the sacrificial film 129f can be selected according to the etching conditions of the sacrificial film 128f and the sacrificial film 129f.

[0217] For example, when dry etching using a fluorine-containing gas (also called a fluorine-based gas) is used to etch the sacrificial film 129f, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, or an alloy containing molybdenum and tungsten can be used for the sacrificial film 129f. Here, metal oxide films such as IGZO and ITO can be used for the sacrificial film 128f as films that allow for a higher selectivity ratio for etching (i.e., a slower etching rate) compared to the dry etching using the above-mentioned fluorine-based gas.

[0218] However, the sacrificial film 129f can be selected from a variety of materials, depending on the etching conditions of the sacrificial film 128f and the sacrificial film 129f. For example, it can be selected from among the films that can be used for the sacrificial film 128f.

[0219] For example, an oxide film can be used as the sacrificial film 129f. Typically, oxide films or oxynitride films such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, and hafnium oxynitride can be used.

[0220] The sacrificial film 129f can be, for example, a nitride film. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can be used. Alternatively, metals such as tungsten, molybdenum, copper, aluminum, titanium, and tantalum, or alloys containing such metals, may be used as the sacrificial film 129f.

[0221] For example, it is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method as the sacrificial film 128f, and to use an indium-containing metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) formed by the sputtering method as the sacrificial film 129f.

[0222] For example, the sacrificial film 129f can be made from the same material used for the functional film 155f, the active film 157f, or the functional film 156f. Using such a material is preferable because it allows for the common use of the film deposition apparatus. Furthermore, when etching the functional film 155f, the active film 157f, and the functional film 156f later using the sacrificial layer as a mask, the sacrificial film 129f can also be removed, simplifying the process.

[0223] [Formation of sacrificial layers 129 and 128] Next, a resist mask 133 is formed on the sacrificial film 129f in the region overlapping with electrode 111d (Figure 10C).

[0224] The resist mask 133 can use a resist material containing a photosensitive resin, such as a positive-type resist material or a negative-type resist material.

[0225] In this case, if the resist mask 133 is formed on the sacrificial film 128f without forming the sacrificial film 129f, there is a risk that the functional film 156f, etc., may dissolve due to the solvent of the resist material if there are defects such as pinholes in the sacrificial film 128f. Using the sacrificial film 129f prevents such problems from occurring.

[0226] Furthermore, if a sacrificial film 128f is used that is less prone to defects such as pinholes, the resist mask 133 may be formed directly on the sacrificial film 128f without using the sacrificial film 129f.

[0227] Next, the sacrificial film 129f in the area not covered by the resist mask 133 is removed by etching to form a sacrificial layer 129.

[0228] When etching the sacrificial film 129f, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial film 128f is not removed by the etching. The sacrificial film 129f can be etched by wet etching or dry etching, but by using dry etching, it is possible to suppress the reduction in the area of ​​the sacrificial layer 129.

[0229] Next, remove the resist mask 133 (Figure 10D).

[0230] The resist mask 133 can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 133 by dry etching (also called plasma ashing) using oxygen gas as the etching gas.

[0231] In this case, the removal of the resist mask 133 is performed with the sacrificial film 128f on the functional film 156f, thus suppressing damage to the functional film 156f, the active film 157f, and the functional film 155f. In particular, since contact of the active film 157f with oxygen can adversely affect the characteristics of the photodetector, this method is suitable when etching is performed using oxygen gas, such as plasma ashing.

[0232] Next, using the sacrificial layer 129 as a mask, the sacrificial film 128f in the region not covered by the sacrificial layer 129 is removed by etching, forming a sacrificial layer 128 in the region overlapping with the electrode 111d, and also forming a sacrificial layer 128p in contact with the upper surface of the connecting electrode 111p.

[0233] The sacrificial layer 128f can be etched by wet etching or dry etching, but dry etching is preferred because it suppresses the reduction in the area of ​​the sacrificial layer 128 and the sacrificial layer 128p.

[0234] [Formation of the third layer 155, the active layer 157, and the fourth layer 156] Next, the sacrificial layer 129 is removed by etching, and the functional film 156f, active film 157f, and functional film 155f in the regions not covered by either the sacrificial layer 128 or the sacrificial layer 128p are also removed by etching to form the fourth layer 156, the active layer 157, and the third layer 155 (Figure 10E).

[0235] By etching the functional film 156f, the active film 157f, and the functional film 155f with the sacrificial layer 129 in the same process, the process can be simplified, increasing the productivity of the display device and reducing manufacturing costs.

[0236] In particular, it is preferable to use dry etching with an etching gas that does not contain oxygen as its main component for etching the functional film 156f, the active film 157f, and the functional film 155f. This suppresses deterioration of the functional film 156f, the active film 157f, and the functional film 155f, enabling the realization of a highly reliable display device. Examples of etching gases that do not contain oxygen as their main component include noble gases such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, H2, or He. Alternatively, a mixed gas of the above gas and an oxygen-free diluent gas can be used as the etching gas.

[0237] The etching of the functional film 156f, the active film 157f, and the functional film 155f may be performed separately from the etching of the sacrificial layer 129. For example, the functional film 156f, the active film 157f, and the functional film 155f may be etched first, and then the sacrificial layer 129 may be etched.

[0238] [Formation of functional film 115f] Next, the functional film 115f is formed by covering the insulating layer 131, electrodes 111a, 111b, 111c, connecting electrode 111p, third layer 155, active layer 157, fourth layer 156, and sacrificial layer 128 (Figure 11A). The functional film 115f later becomes the first layer 115a, first layer 115b, and first layer 115c. It is preferable to form the functional film 115f without using FMM.

[0239] The functional film 115f can be deposited using the same method as that used for depositing the functional film 155f, the active film 157f, and the functional film 156f. However, it is not limited to this, and the above-mentioned deposition methods can be used as appropriate.

[0240] [Formation of light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B] Next, an island-shaped light-emitting layer 112R is formed on the functional film 115f in the region overlapping with electrode 111a (Figure 11B).

[0241] The light-emitting layer 112R is preferably formed by a vacuum deposition method using an FMM. Alternatively, island-shaped light-emitting layers 112R may be formed using a sputtering method or an inkjet method using an FMM.

[0242] Figure 11B shows the formation of the light-emitting layer 112R via the FMM151R. Figure 11B shows the formation of the light-emitting layer 112R using a so-called face-down method, in which the substrate is inverted so that the surface to be formed on the light-emitting layer 112R is facing downwards.

[0243] In the vacuum evaporation method using an FMM, deposition often occurs over a range wider than the aperture of the FMM. As shown by the dashed line in FIG. 11B, the light-emitting layer 112R can be formed over a range wider than the aperture of the FMM 151R. Also, the ends of the light-emitting layer 112R have a tapered shape.

[0244] Subsequently, using the FMM 151G, the light-emitting layer 112G is formed on the functional film 115f in the region overlapping with the electrode 111b (FIG. 11C). The ends of the light-emitting layer 112G have a tapered shape.

[0245] Subsequently, using the FMM 151B, the light-emitting layer 112B is formed on the functional film 115f in the region overlapping with the electrode 111c (FIG. 11D). The ends of the light-emitting layer 112B have a tapered shape.

[0246] It is preferable not to form the light-emitting layer 112R, the light-emitting layer 112G, and the light-emitting layer 112B on the connection electrode 111p.

[0247] Here, the light-emitting layer 112R, the light-emitting layer 112G, and the light-emitting layer 112B are formed in this order, but the formation order is not limited to this.

[0248] 〔Formation of Functional Film 116f, Sacrificial Film 118f, and Sacrificial Film 119f〕 Subsequently, covering the light-emitting layer 112R, the light-emitting layer 112G, the light-emitting layer 112B, and the functional film 115f, the functional film 116f is formed. The functional film 116f will later become the second layer 116a, the second layer 116b, and the second layer 116c. The formation of the functional film 116f can use a method that can be used for the film formation of the aforementioned functional film 155f, active film 157f, and functional film 156f. Note that it is not limited to this, and the above-described film formation methods can be used as appropriate.

[0249] Subsequently, on the functional film 116f, the sacrificial film 118f and the sacrificial film 119f are formed in this order (FIG. 12A).

[0250] The sacrificial film 118f can preferably use a film with high resistance to the etching process of the functional film 116f and the functional film 115f, that is, a film with a large etching selectivity. Also, the sacrificial film 118f can preferably use a film with a large etching selectivity with respect to the sacrificial film 119f described later. Further, the sacrificial film 118f can use a film that can be removed by a wet etching method that causes little damage to the functional film 156f and the functional film 155f.

[0251] The sacrificial film 118f can use a material that can be used for the sacrificial film 128f. Also, the formation of the sacrificial film 118f can use a method that can be used for the formation of the sacrificial film 128f. Note that it is not limited to this, and the above-described film formation methods can be appropriately used.

[0252] It is preferable that the sacrificial film 118f uses the same material as the sacrificial film 128f. Further, it is preferable that the film thickness of the sacrificial film 118f is approximately the same as the film thickness of the sacrificial film 128f.

[0253] The sacrificial film 119f is used as a hard mask when etching the sacrificial film 118f later. Also, when processing the sacrificial film 119f later, the sacrificial film 118f is exposed. Therefore, a combination of films with a large etching selectivity with respect to each other is selected for the sacrificial film 118f and the sacrificial film 119f. Therefore, according to the etching conditions of the sacrificial film 118f and the etching conditions of the sacrificial film 119f, a film that can be used for the sacrificial film 119f can be selected.

[0254] The sacrificial film 119f can use a material that can be used for the sacrificial film 129f. Also, the formation of the sacrificial film 118f can use a method that can be used for the formation of the sacrificial film 128f. Note that it is not limited to this, and the above-described film formation methods can be appropriately used. The sacrificial film 119f may use the same material as the sacrificial film 129f or may use a different material. Also, the film thickness of the sacrificial film 118f may be approximately the same as the film thickness of the sacrificial film 128f or may be different.

[0255] The etching of sacrificial film 119f is described in the same way as the etching of sacrificial film 129f, so a detailed explanation is omitted.

[0256] [Formation of sacrificial layers 119a to 119c and sacrificial layers 118a to 118c] Next, resist masks 134a, 134b, and 134c are formed on the sacrificial film 119f in the region overlapping with electrode 111a, on the sacrificial film 119f in the region overlapping with electrode 111b, and on the sacrificial film 119f in the region overlapping with electrode 111d (Figure 12B).

[0257] The resist mask 134a is made larger than the light-emitting layer 112R. That is, the edges of the resist mask 134a are located outside the edges of the light-emitting layer 112R. Similarly, the resist mask 134b is made larger than the light-emitting layer 112G. That is, the edges of the resist mask 134b are located outside the edges of the light-emitting layer 112G. The resist mask 134c is made larger than the light-emitting layer 112B. That is, the edges of the resist mask 134c are located outside the edges of the light-emitting layer 112B.

[0258] Detailed explanations of resist masks 134a, 134b, and 134c are omitted as they can be found in the description of resist mask 133.

[0259] In this case, if resist masks 134a, 134b, and 134c are formed on the sacrificial film 118f without forming the sacrificial film 119f, there is a risk that the functional film 116f, etc., may dissolve due to the solvent of the resist material if defects such as pinholes exist in the sacrificial film 118f. Using the sacrificial film 119f prevents such problems from occurring.

[0260] Furthermore, if a film less prone to defects such as pinholes is used for the sacrificial film 118f, the resist masks 134a, 134b, and 134c may be formed directly on the sacrificial film 118f without using the sacrificial film 119f.

[0261] Next, the sacrificial film 119f in the region not covered by any of the resist masks 134a, 134b, and 134c is removed by etching to form sacrificial layers 119a, 119b, and 119c.

[0262] When etching the sacrificial film 119f, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial film 118f is not removed by the etching. The sacrificial film 119f can be etched by wet etching or dry etching, but by using dry etching, it is possible to suppress the reduction in the area of ​​the sacrificial layers 119a, 119b, and 119c.

[0263] Next, resist masks 134a, 134b, and 134c are removed (Figure 12C).

[0264] The removal of resist masks 134a, 134b, and 134c can be performed using the same method as for removing resist mask 133.

[0265] In this case, the removal of the resist masks 134a, 134b, and 134c is performed with the sacrificial film 118f on the functional film 116f, thus suppressing damage to the functional film 156f, the light-emitting layer 112R, the light-emitting layer 112G, the light-emitting layer 112B, and the functional film 155f. In particular, since contact between the light-emitting layer 112R, the light-emitting layer 112G, and the light-emitting layer 112B can adversely affect the characteristics of the light-emitting device, this method is suitable when etching is performed using oxygen gas, such as plasma ashing.

[0266] Next, using sacrificial layers 119a, 119b, and 119c as a mask, the sacrificial film 118f in the region not covered by any of the sacrificial layers 119a, 119b, and 119c is removed by etching to form sacrificial layers 118a, 118b, and 118c.

[0267] Since the etching of the sacrificial film 118f can refer to the description regarding the etching of the sacrificial film 128f, a detailed description thereof will be omitted.

[0268] [Formation of the First Layers 115a to 115c and the Second Layers 116a to 116c] Subsequently, the sacrificial layers 119a, 119b, and 119c are removed by etching, and the functional films 116f and 115f in regions not covered by any of the sacrificial layers 118a, 118b, and 118c are removed by etching to form the second layers 116a, 116b, 116c, the first layers 115a, 115b, and 115c (FIG. 12D).

[0269] By etching the functional films 116f and 115f and the sacrificial layers 119a, 119b, and 119c in the same process, the process can be simplified, the productivity of the display device can be increased, and the manufacturing cost can be reduced.

[0270] In particular, for the etching of the functional films 116f and 115f, it is preferable to use dry etching with an etching gas that does not mainly contain oxygen. Thereby, alteration of the functional films 156f and 155f can be suppressed, and a highly reliable display device can be realized.

[0271] Note that the etching of the functional films 116f and 115f and the etching of the sacrificial layers 119a, 119b, and 119c may be performed separately. For example, the functional films 116f and 115f may be etched, and then the sacrificial layers 119a, 119b, and 119c may be etched.

[0272] [Removal of the Sacrificial Layers 118a to 118c, the Sacrificial Layer 128, and the Sacrificial Layer 128p] Next, sacrificial layers 118a, 118b, 118c, 128, and 128p are removed, exposing the top surfaces of the second layer 116a, the second layer 116b, the second layer 116c, the fourth layer 156, and the connecting electrode 111p (Figure 13A).

[0273] Sacrificial layers 118a, 118b, 118c, 128, and 128p can be removed by wet etching or dry etching. In this case, it is preferable to use a method that causes as little damage as possible to the light-emitting layer 112, the active layer 157, the first layer 115, the second layer 116, the third layer 155, the fourth layer 156, and the connecting electrode 111p. In particular, it is preferable to use a wet etching method. For example, it is preferable to use wet etching using an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0274] Alternatively, it is preferable to remove sacrificial layers 118a, 118b, 118c, 128, and 128p by dissolving them in a solvent such as water or alcohol. Here, various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used as the alcohol that can dissolve sacrificial layers 118a, 118b, 118c, 128, and 128p.

[0275] Since the sacrificial layers 118a to 118c and the sacrificial layers 128 and 128p are removed simultaneously, it is preferable that the etching times required for their removal be approximately the same. For example, it is preferable to use the same material for the sacrificial layers 118a to 118c and the sacrificial layers 128 and 128p. Furthermore, it is preferable to have similar film thicknesses for the sacrificial layers 118a to 118c and the sacrificial layers 128 and 128p.

[0276] After removing sacrificial layers 118a, 118b, 118c, 128, and 128p, it is preferable to perform a drying treatment to remove water contained inside the light-emitting layer 112, active layer 157, first layer 115, second layer 116, third layer 155, fourth layer 156, and connecting electrode 111p, as well as water adsorbed on the surface. For example, it is preferable to perform a heat treatment under an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0277] [Formation of common electrode 123] Next, the second layer 116a, the second layer 116b, the second layer 116c, the fourth layer 156, and the connecting electrode 111p are covered to form a common electrode 123 (Figure 13B). The common electrode 123 is electrically connected to the connecting electrode 111p at the connection portion 140.

[0278] The common electrode 123 can be formed using a vapor deposition method or a sputtering method. Alternatively, the common electrode 123 may be formed by laminating a film formed by vapor deposition with a film formed by sputtering. It is preferable to form the common electrode 123 using a shielding mask. It is preferable to provide the shielding mask so that the common electrode 123 is not exposed at the edge of the display device 100, that is, so that the edge of the common electrode 123 is inside the edge of the display device 100.

[0279] Furthermore, a shielding mask does not need to be used when forming the common electrode 123. As shown in Figure 13C, a conductive layer 123f, which will become the common electrode 123, is formed. Subsequently, as shown in Figure 13D, a resist mask 135 is formed on the conductive layer 123f, and the conductive layer 123f is processed to form the common electrode 123. At this time, it is preferable to process the common electrode 123 so that it is not exposed at the edge of the display device, that is, so that the edge of the common electrode 123 is inside the edge of the display device.

[0280] [Formation of protective layer 125] Next, a protective layer 125 is formed on the common electrode 123. For forming the inorganic insulating film used in the protective layer 125, sputtering, PECVD, or ALD methods are preferred. The ALD method is particularly preferred because it offers excellent step coverage and is less prone to defects such as pinholes. Furthermore, for forming the organic insulating film, the inkjet method is preferred because it allows for the formation of a uniform film in the desired region.

[0281] Based on the above, the display device shown in Figure 4B can be manufactured.

[0282] In one embodiment of the present invention, the light-emitting layer of the light-emitting device is formed using FMM, while the active layer of the light-receiving device can be formed without using FMM. By adopting such a configuration, a display device with highly accurate light detection capabilities can be provided.

[0283] <Example of manufacturing method 2> The method for manufacturing the display device shown in Figure 6A will be explained. Figures 14A to 14C are schematic cross-sectional views of each step in the method for manufacturing the display device. Note that the explanation will be omitted for parts that overlap with the previously described manufacturing method example 1, and the differences will be explained.

[0284] First, following the same procedure as in example 1 of the fabrication method, a sacrificial film up to 119f is formed (Figure 12A).

[0285] [Formation of sacrificial layers 119a to 119c and sacrificial layers 118a to 118c] Next, resist masks 134a, 134b, and 134c are formed on the sacrificial film 119f in the region overlapping with electrode 111a, on the sacrificial film 119f in the region overlapping with electrode 111b, and on the sacrificial film 119f in the region overlapping with electrode 111d (Figure 14A).

[0286] The resist mask 134a is smaller than the light-emitting layer 112R. That is, the edges of the resist mask 134a are located inside the edges of the light-emitting layer 112R. Similarly, the resist mask 134b is smaller than the light-emitting layer 112G. That is, the edges of the resist mask 134b are located inside the edges of the light-emitting layer 112G. The resist mask 134c is smaller than the light-emitting layer 112B. That is, the edges of the resist mask 134c are located inside the edges of the light-emitting layer 112B.

[0287] Next, the sacrificial film 119f in the region not covered by any of the resist masks 134a, 134b, and 134c is removed by etching to form sacrificial layers 119a, 119b, and 119c.

[0288] Next, resist masks 134a, 134b, and 134c are removed (Figure 14B).

[0289] Next, using sacrificial layers 119a, 119b, and 119c as a mask, the sacrificial film 118f in the region not covered by any of the sacrificial layers 119a, 119b, and 119c is removed by etching to form sacrificial layers 118a, 118b, and 118c.

[0290] [Formation of the first layer 115a to 115c and the second layer 116a to 116c] Next, sacrificial layers 119a, 119b, and 119c are removed by etching, and functional films 116f and 115f in the regions not covered by sacrificial layers 118a, 118b, and 118c are also removed by etching to form the second layer 116a, 116b, 116c, the first layer 115a, the first layer 115b, and the first layer 115c (Figure 14C). At this time, the light-emitting layers 112R, 112G, and 112B in the regions not covered by sacrificial layers 118a, 118b, and 118c are also etched, and parts of light-emitting layers 112R, 112G, and 112B are exposed.

[0291] In particular, it is preferable to use dry etching with an etching gas that does not contain oxygen as its main component for etching the light-emitting layer 112R, light-emitting layer 112G, light-emitting layer 112B, functional film 116f, and functional film 115f. This suppresses deterioration of the light-emitting layer 112R, light-emitting layer 112G, light-emitting layer 112B, functional film 156f, and functional film 155f, thereby realizing a highly reliable display device.

[0292] After the removal of sacrificial layers 118a, 118b, 118c, 128, and 128p, a detailed explanation can be omitted as it can be seen from the aforementioned example of the manufacturing method 1.

[0293] Based on the above, the display device shown in Figure 6A can be manufactured.

[0294] <Example of manufacturing method 3> The method for manufacturing the display device shown in Figure 7A will be explained. Figures 15A to 15D are schematic cross-sectional views of each step in the method for manufacturing the display device. Note that the explanation will be omitted for parts that overlap with the previously described manufacturing method example 1, and the differences will be explained.

[0295] First, following the same procedure as in example 1 of the fabrication method, a sacrificial film up to 119f is formed (Figure 12A).

[0296] [Formation of Sacrificial Layer 119 and Sacrificial Layer 118] Next, a resist mask 134 is formed on the sacrificial film 119f in the region overlapping with electrodes 111a, 111b, and 111c (Figure 15A).

[0297] Next, the sacrificial film 119f in the area not covered by the resist mask 134 is removed by etching to form a sacrificial layer 119.

[0298] Next, remove the resist mask 134 (Figure 15B).

[0299] Next, using the sacrificial layer 119 as a mask, the sacrificial film 118f in the region not covered by the sacrificial layer 119 is removed by etching to form the sacrificial layer 118.

[0300] [Formation of the first layer 115 and the second layer 116] Next, the sacrificial layer 119 is removed by etching, and the functional films 116f and 115f in the areas not covered by the sacrificial layer 118 are also removed by etching to form the second layer 116 and the first layer 115 (Figure 15C).

[0301] [Removal of sacrificial layer 118, sacrificial layer 128, and sacrificial layer 128p] Next, sacrificial layers 118, 128, and 128p are removed (Figure 15D). Detailed explanations of the removal of sacrificial layers 118, 128, and 128p are omitted as they can be found in the previously mentioned section.

[0302] Since the process from the formation of the common electrode 123 onward can be described in the aforementioned example of the fabrication method 1, a detailed explanation will be omitted.

[0303] Based on the above, the display device shown in Figure 7A can be manufactured.

[0304] <Example of manufacturing method 4> The method for manufacturing the display device shown in Figure 8B will be explained. Figures 16A to 16D are schematic cross-sectional views of each step in the method for manufacturing the display device. Note that the explanation will be omitted for parts that overlap with the previously described manufacturing method example 1, and the differences will be explained.

[0305] First, following the same procedure as in example 1 of the manufacturing method, the second layer 116a, the second layer 116b, the second layer 116c, the first layer 115a, the first layer 115b, and the first layer 115c are formed (Figure 12D).

[0306] [Formation of insulating film 182f] Next, the insulating film 182f is formed by covering the sacrificial layers 118a, 118b, 118c, 128, 128p, and the insulating layer 131 (Figure 16A).

[0307] The insulating film 182f functions as a barrier layer that prevents impurities from diffusing into the EL layer and the light-receiving layer. Examples of impurities include water. Forming the insulating film 182f by the ALD method, which has excellent step coverage, is preferable because it can suitably cover the sides of the EL layer and the light-receiving layer.

[0308] It is preferable to use the same film for the insulating film 182f as the sacrificial layer 118, as this allows for simultaneous etching in a later process. For example, it is preferable to use inorganic insulating materials such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method for both the insulating film 182f and the sacrificial layer 118.

[0309] Furthermore, the materials that can be used for the insulating film 182f are not limited to those mentioned above, and any materials that can be used for the sacrificial layer 119 can be used as appropriate.

[0310] [Formation of resin layer 184] Next, a resin layer 184 is formed between two adjacent light-emitting devices and between adjacent light-emitting devices and a light-receiving device (Figure 16B). Figure 16B shows an example where the resin layer 184 is formed to be wider than the width between the devices.

[0311] It is preferable to use a photosensitive resin as the resin layer 184. In this case, the resin layer 184 can be formed by first forming a resin film, then exposing the resin film through a photomask, and then performing a development process. After that, the upper part of the resin layer 184 may be removed by ashing or the like to adjust the height of the upper surface of the resin layer 184.

[0312] When a non-photosensitive resin is used as the resin layer 184, the resin layer 184 can be formed by removing the upper part of the resin film by ashing after the resin film has been formed, until the surface of the sacrificial layer 118 and sacrificial layer 128 is exposed, until the thickness is optimal.

[0313] [Insulating film 182f, sacrificial layer etching] Next, the insulating film 182f, sacrificial layer 118a, sacrificial layer 118b, sacrificial layer 118c, sacrificial layer 128, and sacrificial layer 128p in the area not covered by the resin layer 184 are removed by etching, exposing the upper surface of the second layer 116, the upper surface of the fourth layer 156, and the upper surface of the connecting electrode 111p. In addition, an insulating layer 182 is formed in the area covered by the resin layer 184 (Figure 16C). At this time, the upper part of the resin layer 184 may be removed, and the height of the upper surface of the resin layer 184 may become lower.

[0314] It is preferable to perform the etching of the insulating film 182f and the sacrificial layers 118a, 118b, 118c, 128, and 128p in the same process. In particular, wet etching, which causes minimal etching damage to the second layer 116a, the second layer 116b, the second layer 116c, and the fourth layer 156, is preferably used for etching the sacrificial layers 118a, 118b, 118c, 128, and 128p. For example, it is preferable to use wet etching with an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0315] Alternatively, it is preferable to remove either or both of the insulating film 182f and the sacrificial layer 118 by dissolving them in a solvent such as water or alcohol. Here, various alcohols can be used as the alcohol that can dissolve the insulating film 182f and the sacrificial layer 118, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0316] After removing sacrificial layers 118a, 118b, 118c, 128, and 128p, it is preferable to perform a drying treatment to remove water contained inside the light-emitting layer 112, active layer 157, first layer 115, second layer 116, third layer 155, fourth layer 156, and connecting electrode 111p, as well as water adsorbed on the surface.

[0317] [Formation of common electrode 123] Next, the common electrode 123 is formed by covering the insulating layer 182, the resin layer 184, the second layer 116, the fourth layer 156, and the connecting electrode 111p (Figure 16D).

[0318] [Formation of protective layer 125] Next, a protective layer 125 is formed on the common electrode 123.

[0319] Based on the above, the display device shown in Figure 8B can be manufactured.

[0320] <Example of manufacturing method 5> The method for manufacturing the display device shown in Figure 9A will be explained. Figures 17A to 19B are schematic cross-sectional views of each step in the method for manufacturing the display device. Note that the explanation will be omitted for parts that overlap with the previously described manufacturing method example 1, and the differences will be explained.

[0321] First, the insulating layer 131 is formed in the same manner as in example 1 of the manufacturing method (Figure 10A).

[0322] [Formation of functional membrane 155f, active membrane 157f, and functional membrane 156f] Next, a functional film 155f, which will later become the third layer 155, an active film 157f, which will become the active layer 157, and a functional film 156f, which will become the fourth layer 156, are deposited on electrodes 111a, 111b, 111c, 111d, and the insulating layer 131 in this order. The formation of functional films 155f, 157f, and 156f can be found in the previously mentioned description, so a detailed explanation is omitted.

[0323] [Formation of sacrificial film 128f and sacrificial film 129f] Next, a sacrificial film 128f and a sacrificial film 129f are formed on the functional film 156f in that order (Figure 17A).

[0324] The thickness of the sacrificial film 128f is preferably 10 nm to 3 μm, more preferably 10 nm to 2 μm, more preferably 10 nm to 1 μm, more preferably 20 nm to 1 μm, more preferably 20 nm to 500 nm, more preferably 30 nm to 500 nm, more preferably 30 nm to 400 nm, more preferably 40 nm to 400 nm, more preferably 40 nm to 300 nm, more preferably 50 nm to 300 nm, more preferably 50 nm to 200 nm, and more preferably 50 nm to 100 nm. Furthermore, the thickness of the sacrificial film 128f is preferably thicker than the thickness of the first layer 115.

[0325] Regarding the sacrificial film 129f, please refer to the previously mentioned description, and a detailed explanation will be omitted.

[0326] From here [Formation of sacrificial layers 129 and 128] Next, a resist mask 133 and a resist mask 133p are formed on the sacrificial film 129f in the region overlapping with electrode 111d, and on the sacrificial film 129f in the region overlapping with connection portion 140 (Figure 17B).

[0327] Next, the sacrificial film 129f in the region not covered by either the resist mask 133 or the resist mask 133p is removed by etching to form the sacrificial layer 129 and the sacrificial layer 129p.

[0328] Next, remove the resist mask 133 (Figure 17C).

[0329] Next, using the sacrificial layer 129 and the sacrificial layer 129p as a mask, the sacrificial film 128f in the region not covered by either the sacrificial layer 129 or the sacrificial layer 129p is removed by etching, forming a sacrificial layer 128 in the region overlapping with the electrode 111d, and forming a sacrificial layer 128p in contact with the upper surface of the connecting electrode 111p.

[0330] [Formation of the third layer 155, the active layer 157, and the fourth layer 156] Next, the sacrificial layer 129 and sacrificial layer 129p are removed by etching, and the functional film 156f, active film 157f, and functional film 155f in the regions not covered by either the sacrificial layer 128 or sacrificial layer 128p are removed by etching to form the fourth layer 156, the active layer 157, and the third layer 155 (Figure 17D).

[0331] By etching the functional film 156f, the active film 157f, and the functional film 155f, along with the sacrificial layer 129 and the sacrificial layer 129p, in the same process, the process can be simplified, increasing the productivity of the display device and reducing manufacturing costs.

[0332] In particular, detailed explanations regarding the etching of functional film 156f, active film 157f, and functional film 155f are omitted as they can be found in the previously mentioned description.

[0333] [Formation of the first layer 115] Next, a functional film that forms the first layer 115 is formed by covering the insulating layer 131, electrodes 111a, 111b, 111c, connecting electrode 111p, third layer 155, active layer 157, fourth layer 156, sacrificial layer 128, and sacrificial layer 128p.

[0334] Here, a region is formed between the region where the sacrificial layer 128 or sacrificial layer 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided, in which case the functional film is not deposited. In other words, the functional film is provided separately in the region where the sacrificial layer 128 or sacrificial layer 128p is provided and in the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. Figure 18A shows the functional film provided separately, consisting of a first layer 115d deposited on the sacrificial layer 128, a first layer 115p deposited on the sacrificial layer 128p, and a first layer 115p deposited in the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. The first layer 115 is provided in contact with the upper surfaces of electrodes 111a, 111b, and 111c.

[0335] The thickness of the sacrificial film 128f, which becomes the sacrificial layer 128 or sacrificial layer 128p, is preferably within the range described above. If the thickness of the sacrificial film 128f is too thin, it may become impossible to separate and provide the functional film that becomes the first layer 115. Conversely, if the thickness of the sacrificial film 128f is too thick, it may become difficult to process the sacrificial film 128f. By setting the thickness of the sacrificial film 128f within the range described above, it becomes possible to separate and provide the functional film that becomes the first layer 115, and the processing of the sacrificial film 128f can be facilitated.

[0336] [Formation of light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B] Next, using FMM151R, an island-shaped light-emitting layer 112R is formed on the first layer 115 in the region overlapping with electrode 111a (Figure 18B).

[0337] Next, using FMM151G, a light-emitting layer 112G is formed on the first layer 115 in the region overlapping with electrode 111b.

[0338] Next, using FMM151B, a light-emitting layer 112B is formed on the first layer 115 in the region overlapping with the electrode 111c (Figure 18C).

[0339] The formation of the light-emitting layers 112R, 112G, and 112B can be found in the previously mentioned description, so a detailed explanation will be omitted.

[0340] The formation order of the light-emitting layer 112R, light-emitting layer 112G, and light-emitting layer 112B is not particularly limited.

[0341] [Formation of the second layer 116] Next, a functional film that forms the second layer 116 is formed by covering the light-emitting layer 112R, light-emitting layer 112G, light-emitting layer 112B, the first layer 115, the first layer 115d, and the first layer 115p.

[0342] Here, a region is formed between the region where the sacrificial layer 128 or sacrificial layer 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided, in which case the functional film is not deposited. In other words, the functional film is provided in a separated (also called stepped) manner between the region where the sacrificial layer 128 or sacrificial layer 128p is provided and the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. Figure 18D shows the functional film provided in a separated manner, consisting of a second layer 116d deposited on the sacrificial layer 128, a second layer 116p deposited on the sacrificial layer 128p, and a second layer 116 deposited in the region where neither the sacrificial layer 128 nor the sacrificial layer 128p is provided. The second layer 116d is provided in contact with the first layer 115d. The second layer 116p is provided in contact with the first layer 115p. The second layer 116 is provided in contact with the first layer 115. In this case, the end of the second layer 116 may be located inward from the end of the first layer 115.

[0343] The thickness of the sacrificial film 128f, which becomes the sacrificial layer 128 or sacrificial layer 128p, is preferably within the range described above. If the thickness of the sacrificial film 128f is too thin, it may become impossible to separate and provide the functional film that becomes the second layer 116. By setting the thickness of the sacrificial film 128f within the range described above, the functional film that becomes the second layer 116 can be provided separately.

[0344] [Removal of Sacrifice Layer 128 and Sacrifice Layer 128p] Next, the sacrificial layer 128 and the sacrificial layer 128p are removed. At this time, the first layer 115d and the second layer 116d on the sacrificial layer 128, and the first layer 115p and the second layer 116p on the sacrificial layer 128p are also removed, exposing the upper surfaces of the second layer 116a, the second layer 116b, the second layer 116c, the fourth layer 156, and the connecting electrode 111p (Figure 19A).

[0345] When removing the sacrificial layer 128 and sacrificial layer 128p, it is preferable to use a method that causes as little damage as possible to the first layer 115, the second layer 116, the third layer 155, the active layer 157, the fourth layer 156, and the connecting electrode 111p. Wet etching can preferably be used to remove the sacrificial layer 128 and sacrificial layer 128p. By dissolving the sacrificial layer 128, the first layer 115d and the second layer 116d on the sacrificial layer 128 are removed together (also called lift-off). Similarly, by dissolving the sacrificial layer 128p, the first layer 115p and the second layer 116p on the sacrificial layer 128p are removed together (lift-off). By using lift-off, the first layer 115d, the second layer 116d, the first layer 115p, and the second layer 116p can be removed without damaging the first layer 115 and the second layer 116.

[0346] After removing the sacrificial layer 128 and the sacrificial layer 128p, it is preferable to perform a drying treatment to remove water contained inside the light-emitting layer 112, the active layer 157, the first layer 115, the second layer 116, the third layer 155, the fourth layer 156, and the connecting electrode 111p, as well as water adsorbed on the surface.

[0347] [Formation of common electrode 123] Next, the second layer 116, the fourth layer 156, and the connecting electrode 111p are covered to form the common electrode 123 (Figure 19B). The common electrode 123 is electrically connected to the connecting electrode 111p at the connection portion 140.

[0348] [Formation of protective layer 125] Next, a protective layer 125 is formed on the common electrode 123.

[0349] Based on the above, the display device shown in Figure 9A can be manufactured.

[0350] The above is an explanation of one example of a method for manufacturing a display device.

[0351] As described above, in the method for manufacturing a display device according to one aspect of the present invention, a light-emitting device and a light-receiving device can be manufactured separately on the same substrate. Furthermore, the light-emitting device and the light-receiving device can be configured to have no common components other than a common electrode. This makes it possible to increase the signal-to-noise ratio of the light-receiving device, resulting in a display device with a highly accurate light-receiving device. In addition, it is possible to create a display device with low power consumption.

[0352] <Pixel layout> This section explains the layout of pixels. There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0353] The top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device or the light-receiving area of ​​a light-receiving device.

[0354] The display device 100A shown in Figure 4A consists of one pixel 103 arranged in two rows and three columns. Pixel 103 has three subpixels (subpixels 120R, 120G, and 120B) in the top row (1st row) and one subpixel (subpixel 130) in the bottom row (2nd row). In other words, pixel 103 has subpixel 120R in the left column (1st column), subpixel 120G in the middle column (2nd column), subpixel 120B in the right column (3rd column), and subpixel 130 extending across these three columns.

[0355] In this embodiment, to clearly explain the pixel layout, the horizontal direction (X direction) of the drawing is referred to as the row direction and the vertical direction (Y direction) as the column direction. However, the invention is not limited to this, and the row and column directions can be swapped. Therefore, in this specification, one of the row and column directions may be referred to as the first direction, and the other as the second direction. The second direction is perpendicular to the first direction. Note that if the top surface shape of the display unit is rectangular, the first and second directions do not necessarily have to be parallel to the straight lines of the outline of the display unit. Furthermore, the top surface shape of the display unit is not limited to a rectangle; it may be a polygon or a curved shape (circle, ellipse, etc.), and the first and second directions can be any direction relative to the display unit.

[0356] In this embodiment, the order of subpixels is shown from left to right in the drawing for clarity, but it is not limited to this order and can be rearranged to start from right. Similarly, the order of subpixels is shown from top to bottom in the drawing, but it is not limited to this order and can be rearranged to start from bottom.

[0357] Figures 20A and 20B show pixel arrangements different from those in Figure 4A.

[0358] The display device 100B shown in Figure 20A has a stripe arrangement applied to the pixels 103. Each pixel 103 has sub-pixels 120R, 120G, 120B, and 130 in the row direction.

[0359] The display device 100C shown in Figure 20B has a matrix array applied to the pixels 103. Pixel 103 is composed of two rows and two columns, with two subpixels (subpixels 120R and 120G) in the top row (row 1) and two subpixels (subpixels 120B and 130) in the bottom row (row 2). In other words, pixel 103 has two subpixels (subpixels 120R and 130) in the left column (row 1) and two subpixels (subpixels 120G and 120B) in the right column (row 2).

[0360] The positions of each subpixel are not particularly limited. For example, the positions of subpixel 120R and subpixel 130 may be swapped.

[0361] The area of ​​the light-emitting region of each subpixel's light-emitting device may be the same or different. For example, the area of ​​the light-emitting region can be determined according to the lifespan of the light-emitting device. It is preferable to make the area of ​​the light-emitting region of a light-emitting device with a short lifespan larger than the area of ​​the light-emitting regions of other light-emitting devices. By increasing the area of ​​the light-emitting region, the current density applied to the light-emitting device decreases, thus extending the lifespan of the light-emitting device. In other words, a highly reliable display device can be created.

[0362] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0363] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0364] (Embodiment 2) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention.

[0365] <Configuration Example 1> Figure 21 is a perspective view showing an example configuration of the display device 200. The display device 200 has a configuration in which substrate 151 and substrate 152 are bonded together. In Figure 21, substrate 152 is shown with a dashed line.

[0366] The display device 200 includes a display unit 162, a circuit 164, and wiring 165, etc. Figure 21 also shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 200. Therefore, the configuration shown in Figure 21 can also be described as a display module having a display device, an IC, and an FPC.

[0367] Circuit 164 can be, for example, a gate driver. Signals and power can be supplied to circuit 164, etc., via wiring 165. These signals and power can be input to wiring 165 from outside the display device 100, for example, via FPC 172. Alternatively, these signals and power can be generated by IC 173 and output to wiring 165.

[0368] Figure 21 shows an example in which IC173 is mounted on substrate 151 using the COG (Chip On Glass) method, but the TCP (Tape Carrier Package) method or COF (Chip On Film) method may also be used.

[0369] Figure 22 shows an example of a cross-section of the display device 200 shown in Figure 21, including a portion of the area containing the FPC 172, a portion of the area containing the circuit 164, a portion of the area containing the display unit 162, and a portion of the area containing the end. The display device 200 shown in Figure 22 is referred to as display device 200A.

[0370] The display device 200A has transistors 201, 141, 142, a light-emitting device 110, and a light-receiving device 150, etc., between substrates 151 and 152.

[0371] The substrate 152 and the insulating layer 214 are bonded together via an adhesive layer 242. A solid sealing structure or a hollow sealing structure can be applied to encapsulate the light-emitting device 110 and the light-receiving device 150. The space 143 surrounded by the substrate 152, the adhesive layer 242, and the insulating layer 214 is filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure is applied. The adhesive layer 242 may be provided overlapping the light-emitting device 110. Alternatively, the region surrounded by the substrate 152, the adhesive layer 242, and the insulating layer 214 may be filled with a resin different from that of the adhesive layer 242.

[0372] The electrode 111 of the light-emitting device 110 is electrically connected to the conductive layer 222b of the transistor 142 through an opening provided in the insulating layer 214. The transistor 142 has the function of controlling the driving of the light-emitting device 110. The electrode 111PS of the light-receiving device 150 is electrically connected to the conductive layer 222b of the transistor 141 through an opening provided in the insulating layer 214.

[0373] The light emitted by the light-emitting device 110 is projected toward the substrate 152. Light is also incident upon the light-receiving device 150 through the substrate 152 and the space 143. It is preferable to use a material with high transmittance to visible and infrared light for the substrate 152.

[0374] A light-shielding layer 148 is provided on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 148 has openings at positions overlapping with the light-receiving device 150 and at positions overlapping with the light-emitting device 110. In addition, a filter 149 for cutting ultraviolet light is provided at the position overlapping with the light-receiving device 150. Note that a configuration without the filter 149 is also possible.

[0375] Transistors 201, 141, and 142 are all formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0376] Insulating layers 211, 213, 215, and 214 are provided on the substrate 151 in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0377] It is preferable to use a material that does not easily allow impurities such as water or hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0378] Insulating layers 211, 213, and 215 are preferably made of inorganic insulating film. Examples of inorganic insulating films include silicon nitride, silicon oxynitride, silicon oxide, silicon nitride, aluminum oxide, or aluminum nitride. Alternatively, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, or neodymium oxide may be used. Furthermore, two or more of the above insulating films may be laminated together.

[0379] For the insulating layer 214, which functions as a planarizing layer, it is preferable to use an organic insulating film. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0380] Here, organic insulating films often have lower barrier properties against impurities compared to inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 200A. This suppresses the diffusion of impurities from the edge of the display device 200A through the organic insulating film. Alternatively, the organic insulating film may be formed such that its edge is located inward from the edge of the display device 200A, so that the organic insulating film is not exposed at the edge of the display device 200A.

[0381] In the region 228 shown in Figure 22, an opening is formed in the insulating layer 214. This prevents impurities from diffusing from the outside to the display unit 162 through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. Therefore, the reliability of the display device 200A can be improved.

[0382] Transistors 201, 141, and 142 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0383] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0384] Transistors 201, 141, and 142 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, one of the two gates may be given a potential to control the threshold voltage of the transistor, and the other may be given a potential for driving.

[0385] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0386] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0387] When the semiconductor layer has a metal oxide, the metal oxide preferably contains at least indium or zinc, as described above. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it also contains aluminum, gallium, yttrium, tin, etc. Furthermore, it may contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0388] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0389] A connection portion 204 is provided in the area on substrate 151 where substrate 152 does not overlap. At the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via a conductive layer 166 and a connecting layer 244. The upper surface of the connection portion 204 exposes the conductive layer 166, which is obtained by processing the same conductive film as the electrode 111. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connecting layer 244.

[0390] Various optical components can be placed on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (diffusion films, etc.), anti-reflective layers, and light-gathering films. In addition, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 152.

[0391] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, or the like.

[0392] The adhesive layer can be made from various types of curing adhesives, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0393] The connecting layer 244 can be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0394] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used in single-layer or multilayer structures.

[0395] As a translucent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium can be used, or graphene can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, as well as alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials, alloy materials (or their nitrides), it is preferable to make them thin enough to be translucent. Furthermore, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of display elements (conductive layers that function as pixel electrodes or common electrodes).

[0396] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0397] <Configuration Example 2> Figure 23 is a cross-sectional view showing an example configuration of the display device 200B, which is a modified version of the display device 200A. The display device 200B differs from the display device 200A in that it has a substrate 153, an adhesive layer 159, and an insulating layer 212 instead of substrate 151, and a substrate 154, an adhesive layer 160, and an insulating layer 158 instead of substrate 152.

[0398] In the display device 200B, the substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 159. Additionally, the substrate 154 and the insulating layer 158 are bonded together by an adhesive layer 160.

[0399] When manufacturing the display device 200B shown in Figure 23, first, a first manufacturing substrate on which an insulating layer 212, transistors, light-emitting device 110, and light-receiving device 150 are provided, and a second manufacturing substrate on which an insulating layer 158, light-shielding layer 148, and filter 149 are provided, are bonded together with an adhesive layer 242. Then, the first manufacturing substrate is peeled off and a substrate 153 is attached to the exposed surface using an adhesive layer 159. This transfers the components formed on the first manufacturing substrate to the substrate 153. Similarly, the second manufacturing substrate is peeled off and a substrate 154 is attached to the exposed surface using an adhesive layer 160. This transfers the components formed on the second manufacturing substrate to the substrate 154. It is preferable that both substrates 153 and 154 are flexible. This allows the display device 200B to be flexible. In other words, the display device 200B can be made into a flexible display.

[0400] Insulating layer 212 and insulating layer 158 can be made of an inorganic insulating film that can be used for insulating layer 211, insulating layer 213, and insulating layer 215, respectively.

[0401] <Configuration Example 3> Figure 24 is a cross-sectional view showing an example configuration of the display device 200C. The display device 200C includes a substrate 301, a light-emitting device 110, a light-receiving device 150, a capacitor 240, and a transistor 310. The substrate 301 corresponds to the substrate 151 in Figure 21, etc.

[0402] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 has a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as a source or drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0403] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0404] An insulating layer 261 is provided to cover the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0405] Capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as the dielectric of the capacitor 240.

[0406] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0407] An insulating layer 255 is provided covering the capacitance 240, and a light-emitting device 110 and a light-receiving device 150 are provided on the insulating layer 255. A protective layer 125 is provided on the light-emitting device 110 and the light-receiving device 150, and a substrate 420 is bonded to the upper surface of the protective layer 125 by a resin layer 419. The substrate 420 corresponds to the substrate 152 in Figure 21, etc.

[0408] The electrode 111 of the light-emitting device 110 and the electrode 111PS of the light-receiving device 150 are electrically connected to the source or drain of the transistor 310 by a plug 256 embedded in the insulating layer 255, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261.

[0409] <Configuration Example 4> Figure 25 is a cross-sectional view showing an example configuration of the display device 200D. The display device 200D differs from the display device 200C mainly in its transistor configuration. Note that parts similar to those of the display device 200C may be omitted from the explanation.

[0410] Transistor 320 is a transistor (also called an OS transistor) in which a metal oxide is applied to the semiconductor layer where the channel is formed.

[0411] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0412] Substrate 331 corresponds to substrate 151 in Figure 21, etc. Substrate 331 can be an insulating substrate or a semiconductor substrate.

[0413] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. The insulating layer 332 can be made of a film that is less permeable to hydrogen or oxygen than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0414] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0415] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide film with semiconductor properties. Details of materials suitable for use in the semiconductor layer 321 will be described later.

[0416] A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as source and drain electrodes.

[0417] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on top of the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. The insulating layer 328 can be made of the same insulating film as the insulating layer 332.

[0418] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0419] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are roughly the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0420] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 320 from insulating layer 265, etc. Insulating layer 329 can be an insulating film similar to that used for insulating layers 328 and 332.

[0421] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, 264, and 328. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of each of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0422] The configuration from the insulating layer 254 to the substrate 420 in the display device 200D is the same as that of the display device 200C.

[0423] <Configuration Example 5> Figure 26 is a cross-sectional view showing an example configuration of the display device 200E. The display device 200E has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked. Note that parts that are the same as those of the display device 200C or the display device 200D may be omitted from the explanation.

[0424] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0425] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0426] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display unit.

[0427] Furthermore, display devices 200C, 200D, and 200E can be flexible, similar to display device 200B.

[0428] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0429] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0430] (Embodiment 3) This embodiment describes a light-emitting device that can be used in a display device according to one aspect of the present invention.

[0431] <Example of light-emitting device configuration> As shown in Figure 27A, the light-emitting device has an EL layer 686 between a pair of electrodes (electrode 672, electrode 688). The EL layer 686 can be composed of multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430. Layer 4420 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). Light-emitting layer 4411 may include, for example, a light-emitting compound. Layer 4430 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0432] A configuration having a layer 4420, an emissive layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 27A is referred to as a single structure.

[0433] Figure 27B shows a modified example of the EL layer 686 of the light-emitting device shown in Figure 27A. Specifically, the light-emitting device shown in Figure 27B has a layer 4430-1 on electrode 672, a layer 4430-2 on layer 4430-1, a light-emitting layer 4411 on layer 4430-2, a layer 4420-1 on light-emitting layer 4411, a layer 4420-2 on layer 4420-1, and an electrode 688 on layer 4420-2. For example, when electrode 672 is the anode and electrode 688 is the cathode, layer 4430-1 functions as a hole injection layer, layer 4430-2 functions as a hole transport layer, layer 4420-1 functions as an electron transport layer, and layer 4420-2 functions as an electron injection layer. Alternatively, when electrode 672 is used as the cathode and electrode 688 as the anode, layer 4430-1 functions as an electron injection layer, layer 4430-2 functions as an electron transport layer, layer 4420-1 functions as a hole transport layer, and layer 4420-2 functions as a hole injection layer. By using such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination within the light-emitting layer 4411.

[0434] Furthermore, as shown in Figure 27C, a configuration in which multiple light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, light-emitting layer 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0435] As shown in Figure 27D, a configuration in which multiple light-emitting units (EL layer 686a, EL layer 686b) are connected in series via an intermediate layer (charge generation layer) 4440 is referred to as a tandem structure in this specification. In this specification, the configuration shown in Figure 27D is referred to as a tandem structure, but it is not limited to this, and for example, a tandem structure may also be called a stack structure. Furthermore, by using a tandem structure, a light-emitting device capable of high-brightness light emission can be made.

[0436] Furthermore, in Figures 27C and 27D, as shown in Figure 27B, layer 4420 and layer 4430 may be a laminated structure consisting of two or more layers.

[0437] A structure that generates different light-emitting colors (in this case, blue (B), green (G), and red (R)) for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0438] When comparing the single structure, tandem structure, and SBS structure described above, power consumption can be reduced in the order of SBS structure, tandem structure, and single structure. If you want to keep power consumption low, the SBS structure is preferable. On the other hand, the single structure and tandem structure are preferable because their manufacturing process is simpler than that of the SBS structure, which can lead to lower manufacturing costs or higher manufacturing yields.

[0439] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material constituting the EL layer 686. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0440] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in the light-emitting layer. To obtain white light emission, two types of light-emitting materials should be selected such that the light emitted by each of them is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary in color, a light-emitting device that emits white light as a whole can be obtained. When using three or more types of light-emitting materials, the light-emitting colors of each material should combine to produce white light emission as a whole. The same applies to light-emitting devices that have three or more light-emitting layers.

[0441] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0442] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0443] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0444] (Embodiment 4) This embodiment describes the configuration of a light-receiving and light-emitting device that can be used in a display device according to one aspect of the present invention. The display device described above can be configured with the addition of a light-receiving and light-emitting device. Alternatively, the light-receiving device can be replaced with a light-receiving and light-emitting device. A display device according to one aspect of the present invention can have, for example, a configuration comprising a light-emitting device, a light-receiving device, and a light-receiving and light-emitting device. Alternatively, a display device according to one aspect of the present invention can have a configuration comprising a light-emitting device and a light-receiving and light-emitting device.

[0445] A light-receiving and light-receiving device has both a light-emitting function and a light-receiving function. Here, we will explain using a light-receiving and light-receiving device that emits red light and has a light-receiving function as an example. Note that the method for manufacturing the light-receiving and light-receiving device can be found in the description of the method for manufacturing the light-receiving device mentioned above, so a detailed explanation will be omitted. Alternatively, the method for manufacturing the light-receiving and light-receiving device can be found in the description of the method for manufacturing the light-emitting device mentioned above, so a detailed explanation will be omitted.

[0446] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0447] In this embodiment, a top-emission type display device will be used as an example for explanation.

[0448] The light-receiving and light-emitting device shown in Figure 28A comprises an electrode 377, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light-emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and an electrode 378, stacked in this order.

[0449] The light-emitting layer 383R has a light-emitting material that emits red light. The active layer 373 has an organic compound that absorbs visible light. Alternatively, the active layer 373 may have an organic compound that absorbs both visible light and infrared light. Alternatively, the active layer 373 may have an organic compound that absorbs both visible light and infrared light. It is preferable that the organic compound in the active layer 373 does not easily absorb at least the light emitted by the light-emitting layer 383R. As a result, red light can be efficiently extracted from the light-receiving device, and one or more of the following can be detected with high accuracy: light with a shorter wavelength than red (e.g., green light and blue light), and light with a longer wavelength than red (e.g., infrared light).

[0450] Figure 28A schematically shows how a light-emitting / receiving device functions as a light-emitting device. In Figure 28A, the red (R) light emitted from the light-emitting / receiving device is indicated by an arrow.

[0451] Figure 28B schematically shows how a light-receiving device functions as a light-receiving device. In Figure 28B, the blue light (G) and green light (B) incident on the light-receiving device are indicated by arrows.

[0452] The light-receiving and light-receiving device can detect light incident on it by applying a voltage between electrodes 377 and 378, generate an electric charge, and extract it as an electric current.

[0453] The light-receiving and light-emitting device can be described as a configuration in which an active layer 373 is added to the light-emitting device. In other words, by simply adding a step of depositing the active layer 373 to the manufacturing process of the light-emitting device, the light-receiving and light-emitting device can be formed in parallel with the formation of the light-emitting device. Furthermore, the light-emitting device and the light-receiving and light-emitting device can be formed on the same substrate. Therefore, without significantly increasing the manufacturing process, it is possible to add either or both imaging and sensing functions to the display unit.

[0454] The stacking order of the light-emitting layer 383R and the active layer 373 is not limited. Figures 28A and 28B show an example in which the active layer 373 is provided on the hole transport layer 382 and the light-emitting layer 383R is provided on the active layer 373. For example, the stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0455] The light-receiving and light-emitting device does not necessarily have at least one of the hole injection layer 381, hole transport layer 382, ​​electron transport layer 384, and electron injection layer 385. Furthermore, the light-receiving and light-emitting device may have other functional layers, such as a hole blocking layer or an electron blocking layer.

[0456] In a light-receiving and light-emitting device, it is preferable to use a conductive film that transmits visible light on the electrode that extracts light, and to use a conductive film that reflects visible light on the electrode that does not extract light.

[0457] The functions and materials of each layer constituting the light-emitting and light-receiving device are the same as those of each layer constituting the light-emitting device and the light-receiving device; therefore, a detailed explanation is omitted.

[0458] Figures 28C to 28G show examples of stacked structures for light-receiving and light-emitting devices.

[0459] The light-receiving and light-emitting device shown in Figure 28C includes an electrode 377, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer 383R, an active layer 373, an electron transport layer 384, an electron injection layer 385, and an electrode 378.

[0460] Figure 28C shows an example in which a light-emitting layer 383R is provided on a hole transport layer 382, ​​and an active layer 373 is laminated on the light-emitting layer 383R.

[0461] As shown in Figures 28A to 28C, the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0462] It is preferable to provide a buffer layer between the active layer 373 and the light-emitting layer 383R. In this case, it is preferable that the buffer layer has hole transport and electron transport properties. For example, it is preferable to use a bipolar material for the buffer layer. Alternatively, at least one layer from among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used as the buffer layer. Figure 28D shows an example in which a hole transport layer 382 is used as the buffer layer.

[0463] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, the transfer of excitation energy from the light-emitting layer 383R to the active layer 373 can be suppressed. Furthermore, the buffer layer can be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving device having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high luminescence efficiency.

[0464] Figure 28E shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and an emissive layer 383R are stacked in that order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layers 382-1 and 281-2 may contain the same material or different materials. Alternatively, a layer that can be used as a buffer layer as described above may be used instead of the hole transport layer 281-2. Furthermore, the positions of the active layer 373 and the emissive layer 383R may be swapped.

[0465] The light-receiving device shown in Figure 28F differs from the light-receiving device shown in Figure 28A in that it does not have a hole transport layer 382. Thus, the light-receiving device does not need to have at least one of the hole injection layer 381, hole transport layer 382, ​​electron transport layer 384, and electron injection layer 385. Furthermore, the light-receiving device may have other functional layers such as a hole blocking layer or an electron blocking layer.

[0466] The light-receiving and light-emitting device shown in Figure 28G differs from the light-receiving and light-emitting device shown in Figure 28A in that it does not have an active layer 373 and a light-emitting layer 383R, but has a layer 389 that serves as both a light-emitting layer and an active layer.

[0467] As a layer that serves as both an emissive layer and an active layer, for example, a layer can be used that includes three materials: an n-type semiconductor that can be used in the active layer 373, a p-type semiconductor that can be used in the active layer 373, and an emissive material that can be used in the emissive layer 383R.

[0468] Furthermore, it is preferable that the lowest energy absorption band of the absorption spectrum of the mixed material of n-type and p-type semiconductors and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap, and it is even more preferable that they are sufficiently far apart.

[0469] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0470] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0471] (Embodiment 5) This embodiment describes metal oxides that can be used in the OS transistor described in the above embodiment.

[0472] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0473] Metal oxides can be formed by chemical vapor deposition (CVD) methods such as sputtering, metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0474] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0475] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0476] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peak clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0477] The crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. However, in the diffraction pattern of an IGZO film deposited at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that an IGZO film deposited at room temperature is in an intermediate state, neither crystalline nor amorphous, and cannot be concluded to be in an amorphous state.

[0478] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductors), amorphous oxide semiconductors, etc.

[0479] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0480] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0481] Each of the above-mentioned crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of that crystalline region will be less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0482] In In-M-Zn oxide (where element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer). Indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. The In layer may also contain element M. The In layer may also contain Zn. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0483] When structural analysis of a CAAC-OS film is performed using, for example, an XRD instrument, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the peak indicating c-axis orientation (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0484] For example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0485] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction, and the bond distance between atoms changes due to the substitution of metal atoms.

[0486] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more effectively than In oxide.

[0487] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0488] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or more), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0489] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0490] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0491] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing the metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0492] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0493] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0494] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0495] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0496] In in-Ga-Zn oxides, CAC-OS refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like fashion, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which the metal elements are unevenly distributed.

[0497] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Furthermore, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be as low as possible. For example, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0498] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0499] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0500] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0501] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0502] Transistors using CAC-OS are highly reliable. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0503] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0504] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0505] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0506] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶.17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3 More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0507] High-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have a low defect level density, which may result in a low trap level density.

[0508] Charges trapped in the trap levels of oxide semiconductors can take a long time to disappear and sometimes behave like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high density of trap levels may exhibit unstable electrical properties.

[0509] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0510] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0511] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0512] When alkali metals or alkaline earth metals are present in oxide semiconductors, they can form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0513] In oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. As a result, the electrical properties of the transistor may become unstable. For this reason, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻¹⁰. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0514] Hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. When hydrogen fills these vacancies, electrons, which act as carriers, can be generated. Furthermore, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, in oxide semiconductors, the hydrogen concentration obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0515] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0516] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0517] (Embodiment 6) This embodiment describes an electronic device having a display device according to one aspect of the present invention.

[0518] A display device according to one aspect of the present invention can be installed in various electronic devices. For example, in addition to electronic devices with relatively large screens such as television sets, desktop or notebook computers, tablet computers, computer monitors, digital signage, and large game machines such as pachinko machines, a display device according to one aspect of the present invention can be installed in digital cameras, digital video cameras, digital photo frames, portable game consoles, portable information terminals, and sound playback devices. An example of the configuration of an electronic device that can be equipped with a display device according to one aspect of the present invention will be explained with reference to Figures 29A to 29E.

[0519] Figure 29A shows an example of an oxygen concentration meter 900. The oxygen concentration meter 900 has a housing 911 and a light-receiving device 912. The housing 911 is provided with a cavity, and the light-receiving device 912 is provided so as to be in contact with the wall surface of the cavity.

[0520] The light-emitting and receiving device 912 has the function of both a light source that emits light and a sensor that detects light. For example, when an object is placed in the cavity of the housing 911, the light-emitting and receiving device 912 emits light, which is irradiated onto the object, and the light reflected from the object can be detected by the light-emitting and receiving device 912.

[0521] For example, when a finger is placed in the cavity of the housing 911, the color of the blood changes depending on the oxygen saturation of the hemoglobin in the blood (the percentage of hemoglobin bound to oxygen). This changes the intensity of the reflected light from the finger detected by the light-receiving device 912. For example, the intensity of the red light detected by the light-receiving device 912 changes. Thus, the oxygen concentration meter 900 can measure oxygen saturation by detecting the intensity of the reflected light with the light-receiving device 912. The oxygen concentration meter 900 can be, for example, a pulse oximeter.

[0522] A display device according to one embodiment of the present invention can be applied to the light-receiving device 912. In this case, the light-receiving device 912 has at least a light-emitting device that emits red light (R). Furthermore, it is preferable that the light-receiving device 912 also has a light-emitting device that emits infrared light (IR). The red light (R) reflectance of hemoglobin bound to oxygen is significantly different from that of hemoglobin not bound to oxygen. On the other hand, the difference between the infrared light (IR) reflectance of hemoglobin bound to oxygen and that of hemoglobin not bound to oxygen is small. Therefore, by having a light-receiving device 912 that emits not only red light (R) but also infrared light (IR), the oxygen concentration meter 900 can measure oxygen saturation with high accuracy.

[0523] When applying a display device according to one embodiment of the present invention as the light-receiving device 912, it is preferable that the light-receiving device 912 is flexible. The flexibility of the light-receiving device 912 allows it to be given a curved shape. This enables uniform illumination of light onto a finger or the like, allowing for highly accurate measurement of oxygen saturation and other parameters.

[0524] Figure 29B shows an example of a portable data terminal 9100. The portable data terminal 9100 includes a display unit 9110, a housing 9101, a key 9102, and a speaker 9103, etc. The portable data terminal 9100 can be, for example, a tablet. Here, the key 9102 can be, for example, a key for switching the power on and off. In other words, the key 9102 can be, for example, a power switch. The key 9102 can also be, for example, an operation key used to make an electronic device perform a desired operation.

[0525] The display unit 9110 can display information 9104, operation buttons (also called operation icons, or simply icons) 9105, etc.

[0526] By providing a display device according to one aspect of the present invention to the portable data terminal 9100, the display unit 9110 can function as a touch sensor or a near-touch sensor.

[0527] Figure 29C shows an example of the digital signage 9200. The digital signage 9200 can be configured such that a display unit 9210 is attached to a column 9201.

[0528] By providing the digital signage 9200 with a display device according to one aspect of the present invention, the display unit 9210 can function as a touch sensor or a near-touch sensor.

[0529] Figure 29D shows an example of a personal digital information terminal (PDI) 9300. The PDI 9300 includes a display unit 9310, a housing 9301, a speaker 9302, a camera 9303, a key 9304, connection terminals 9305 and 9306, etc. The PDI 9300 can be, for example, a smartphone. The connection terminal 9305 can be, for example, a microUSB, Lightning, or Type-C. The connection terminal 9306 can be, for example, an earphone jack.

[0530] The display unit 9310 can display, for example, the operation buttons 9307. The display unit 9310 can also display information 9308. Examples of information 9308 include notifications of incoming emails, SNS (Social Networking Service) messages, or phone calls, the subject of the email or SNS message, the sender's name, date and time, battery level, and antenna signal strength.

[0531] By providing a display device according to one aspect of the present invention to the portable information terminal 9300, the display unit 9310 can function as a touch sensor or a near-touch sensor.

[0532] Figure 29E shows an example of a wristwatch-type personal information terminal 9400. The personal information terminal 9400 includes a display unit 9410, a housing 9401, a wristband 9402, a key 9403, a connection terminal 9404, etc. The connection terminal 9404 can be, for example, a microUSB, Lightning, or Type-C, similar to the connection terminal 9305, etc.

[0533] The display unit 9410 can display information 9406 and operation buttons 9407, etc. Figure 29E shows an example in which the time is displayed on the display unit 9410 as information 9406.

[0534] By providing a display device according to one aspect of the present invention to the portable information terminal 9400, the display unit 9410 can function as a touch sensor or a near-touch sensor.

[0535] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0536] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of symbols]

[0537] 20B: Light-emitting device, 20G: Light-emitting device, 20R: Light-emitting device, 20: Light-emitting device, 21a: Electrode, 21b: Electrode, 21c: Electrode, 21d: Electrode, 23: Electrode, 25B: EL layer, 25G: EL layer, 25R: EL layer, 25: EL layer, 27a: First layer, 27b: First layer, 27c: First layer, 27: First layer, 29a: Second layer, 29b: Second layer, 29c: Second layer, 29: Second layer, 30PS: Photodetector, 35PS: Photodetector layer, 37PS: Third layer, 39PS: Fourth layer, 41B: Light-emitting layer, 41G: Light-emitting layer, 41R: Light-emitting layer, 43PS: Active 50: Substrate, 52: Finger, 53: Layer, 57: Layer, 59: Substrate, 65: Area, 67: Fingerprint, 69: Contact area, 100A: Display device, 100B: Display device, 100C: Display device, 100: Display device, 101: Substrate, 103: Pixel, 110B: Light-emitting device, 110G: Light-emitting device, 110R: Light-emitting device, 110: Light-emitting device, 111a: Electrode, 111b: Electrode, 111c: Electrode, 111d: Electrode, 111p: Connecting electrode, 111PS: Electrode, 111: Electrode, 112B: Light-emitting layer, 112G: Light-emitting layer, 112R: Light-emitting layer, 112: Light-emitting layer, 115a: First Layer, 115b: First layer, 115c: First layer, 115d: First layer, 115f: Functional film, 115p: First layer, 115: First layer, 116a: Second layer, 116b: Second layer, 116c: Second layer, 116d: Second layer, 116f: Functional film, 116p: Second layer, 116: Second layer, 118a: Sacrificial layer, 118b: Sacrificial layer, 118c: Sacrificial layer, 118f: Sacrificial film, 118: Sacrificial layer, 119a: Sacrificial layer, 119b: Sacrificial layer, 119c: Sacrificial layer, 119f: Sacrificial film, 119: Sacrificial layer, 120B: Subpixel, 120G: Subpixel, 120R: Subpixel, 123f: Lead Electrode layer, 123: Common electrode, 125: Protective layer, 128f: Sacrificial film, 128p: Sacrificial layer, 128: Sacrificial layer, 129f: Sacrificial film, 129p: Sacrificial layer, 129: Sacrificial layer, 130: Subpixel, 131: Insulating layer, 133p: Resist mask, 133: Resist mask, 134a: Resist mask, 134b: Resist mask, 134c: Resist mask, 134: Resist mask, 135: Resist mask, 140: Connection part, 141: Transistor, 142: Transistor, 143: Space, 148: Light shielding layer, 149: Filter, 150: Photodetector, 151B: FMM,151G: FMM, 151R: FMM, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155f: Functional film, 155: Third layer, 156f: Functional film, 156: Fourth layer, 157f: Active film, 157: Active layer, 158: Insulating layer, 159: Adhesive layer, 160: Adhesive layer, 162: Display unit, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 175B: EL layer, 175G: EL layer, 177: Light-receiving layer, 180a: Optical adjustment layer, 180b: Optical adjustment layer, 180c: Optical adjustment layer, 180d: Optical adjustment layer, 180p: Conductive layer, 182 f: insulating film, 182: insulating layer, 184: resin layer, 200A: display device, 200B: display device, 200C: display device, 200D: display device, 200E: display device, 200: display device, 201: transistor, 204: connection part, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 228: region, 231: semiconductor layer, 240: capacitance, 241: conductive layer, 242: adhesive layer, 243: insulating layer, 244: connection layer, 245: conductive layer, 251: conductive layer, 252: conductive Electromagnetic layer, 254: insulating layer, 255: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 301: substrate, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 320: transistor, 321: semiconductor layer, 323: insulating layer, 324: conductive layer, 325: conductive layer, 326: insulating layer, 327: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: Insulating layer, 373: Active layer, 377: Electrode, 378: Electrode, 381: Hole injection layer, 382: Hole transport layer, 383R: Light-emitting layer, 384: Electron transport layer, 385: Electron injection layer, 389: Layer, 419: Resin layer, 420: Substrate, 672: Electrode, 686a: EL layer, 686b: EL layer, 686: EL layer, 688: Electrode, 911: Housing, 912: Light-receiving device, 4411: Light-emitting layer, 4412: Light-emitting layer, 4413: Light-emitting layer, 4420: Layer, 4430: Layer, 9100: Portable data terminal, 9101: Housing, 9102: Key, 9103: Speaker, 9104: Information, 9110: Display unit,9200: Digital signage, 9201: Pillar, 9210: Display unit, 9300: Portable information terminal, 9301: Enclosure, 9302: Speaker, 9303: Camera, 9304: Key, 9305: Connection terminal, 9306: Connection terminal, 9307: Operation button, 9308: Information, 9310: Display unit, 9400: Portable information terminal, 9401: Enclosure, 9402: Wristband, 9403: Key, 9404: Connection terminal, 9406: Information, 9407: Operation button, 9410: Display unit,

Claims

1. It comprises a light-receiving device and a first light-emitting device, The light-receiving device comprises a first electrode, a light-receiving layer, and a common electrode, stacked in this order. The first light-emitting device comprises a second electrode, a first EL layer, and the common electrode, stacked in this order. The light-receiving layer comprises a first layer, a second layer, and an active layer between the first layer and the second layer. The first layer comprises a first substance having hole transport properties, The second layer comprises a second substance having electron transport properties. The edges of the active layer, the first layer, and the second layer coincide or roughly coincide with each other. The first EL layer comprises a third layer, a fourth layer, and a first light-emitting layer between the third and fourth layers. The third layer comprises a third substance having hole transport properties. The fourth layer comprises a fourth substance having electron transport properties. A display device in which the end of the first light-emitting layer is located inside the end of the third layer and inside the end of the fourth layer.

2. In claim 1, The active layer is a display device having a region that overlaps with the first electrode via the first layer.

3. In claim 1, The active layer is a display device having a region that overlaps with the first electrode via the second layer.

4. In any one of claims 1 to 3, A display device wherein the first light-emitting layer has a region that overlaps with the second electrode via the third layer.

5. In any one of claims 1 to 3, A display device wherein the first light-emitting layer has a region that overlaps with the second electrode via the fourth layer.

6. In any one of claims 1 to 5, The ends of the third layer and the ends of the fourth layer are matching or substantially matching display devices.

7. In any one of claims 1 to 6, The first substance is a display device different from the third substance.

8. In any one of claims 1 to 7, The second substance is a display device different from the fourth substance.

9. In any one of claims 1 to 8, The active layer has a fifth substance, The first light-emitting layer is a display device having a sixth material different from the fifth material.

10. In any one of claims 1 to 9, Having a second light-emitting device, The second light-emitting device has a third electrode, a second EL layer, and the common electrode stacked in this order. The display device having the second EL layer, the third layer, the fourth layer, and a second light-emitting layer between the third layer and the fourth layer.

11. In any one of claims 1 to 9, Having a second light-emitting device, The second light-emitting device has a third electrode, a second EL layer, and the common electrode stacked in this order. The second EL layer comprises a fifth layer, a sixth layer, and a second light-emitting layer between the fifth and sixth layers. The fifth layer comprises the third substance, The sixth layer is a display device containing the fourth substance.

12. A step of forming a first electrode and a second electrode, The process involves forming a light-receiving film on the first electrode and the second electrode, The steps include forming an island-shaped first sacrificial layer on the light-receiving film, having a region that overlaps with the first electrode, The process involves etching the light-receiving film using the first sacrificial layer as a mask to form a light-receiving layer and exposing the second electrode, The process involves forming a first functional film on the first sacrificial layer and the second electrode, A step of forming an island-shaped light-emitting layer having a region that overlaps with the second electrode on the first functional film using a metal mask, A step of forming a second functional film on the light-emitting layer and the first functional film, A step of forming an island-shaped second sacrificial layer on the second functional film having a region that overlaps with the light-emitting layer, The process involves etching the first functional film and the second functional film using the second sacrificial layer as a mask to form the first functional layer and the second functional layer, and exposing the first sacrificial layer. A step of removing the first sacrificial layer and the second sacrificial layer to expose the light-receiving layer and the second functional layer, The process includes forming a common electrode on the light-receiving layer and the second functional layer, The first functional layer contains a material having hole transport properties, The second functional layer is a method for manufacturing a display device containing an electron-transporting substance.

13. A step of forming a first electrode and a second electrode, The process involves forming a light-receiving film on the first electrode and the second electrode, The process of forming an island-shaped sacrificial layer on the light-receiving film having a region that overlaps with the first electrode, The process involves etching the light-receiving film using the sacrificial layer as a mask to form a light-receiving layer and exposing the second electrode, The process involves forming a first functional layer on the sacrificial layer and forming a second functional layer on the second electrode. A step of forming an island-shaped light-emitting layer having a region that overlaps with the second electrode on the second functional layer using a metal mask, The process involves forming a third functional layer on the first functional layer and forming a fourth functional layer on the light-emitting layer. The steps include removing the sacrificial layer, lifting off the first functional layer and the third functional layer, and exposing the light-receiving layer, The process includes forming a common electrode on the light-receiving layer and the fourth functional layer, The second functional layer contains a material having hole transport properties, The fourth functional layer is a method for manufacturing a display device containing an electron-transporting substance.

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