Display device with touch sensor

Abstract

To reduce the number of components of a display device having a touch sensor, and to simplify a process.SOLUTION: A display device has: a transparent resin board in which first to fourth transparent resin layers are laminated; a first sensor electrode between the first transparent resin layer and the second transparent resin layer; a second sensor electrode between the second transparent resin layer and the third transparent resin layer; a shield electrode including a first opening between the third transparent resin layer and the fourth transparent resin layer; a first insulating layer on the fourth transparent resin layer, a second insulating layer on the first insulating layer, a third insulating layer on the second insulating layer, and a sealing layer for covering the third insulating layer; and a drive circuit connected to a connection terminal between the first insulating layer and the second insulating layer. The first sensor electrode and the connection terminal are connected by a first contact hole penetrating the first insulating layer, the fourth transparent resin layer, the third transparent resin layer, and the second transparent resin layer. The first contact hole is disposed inside the first opening, and is covered with the third insulating layer and the sealing layer. The connection terminal is disposed in an area exposed from the third insulating layer and the sealing layer, and the shield electrode extends to an area overlapping with the drive circuit.SELECTED DRAWING: Figure 40

Description

[Technical Field]

[0001] One embodiment of the present invention, in addition to functioning as a touch sensor, detects biometric information such as fingerprints and palm prints. This relates to a display device equipped with a sensor capable of outputting data. [Background technology]

[0002] To prevent misuse and protect personal information, biometric authentication is used to identify users. Development of sub-devices is underway. For example, display panels with pixels formed by organic light-emitting diodes. A display device is disclosed in which a fingerprint authentication sensor is attached to the back of the Nell (Patent Document 1). (See reference). Additionally, a touch sensor is provided above the display panel to recognize fingerprints and touch pressure. A possible display device is disclosed (see Patent Document 2). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2018-085114 [Patent Document 2] Japanese Patent Publication No. 2018-005910 [Overview of the project] [Problems that the invention aims to solve]

[0004] Portable electronic devices, in which the display screen occupies the entire front of the device, have a display screen that enhances functionality. There is a market need to enable fingerprint authentication on all surfaces. In contrast to the series, the display device disclosed in Patent Document 1 has a small fingerprint sensor. Because it is installed as a separate component, it is not possible to detect fingerprints across the entire screen. There is a problem. If we try to enable fingerprint authentication across the entire screen, the housing will become larger. There is such a problem.

[0005] On the other hand, in the display device disclosed in Patent Document 2, since the circuit for image display and the circuit for driving the fingerprint sensor are completely separated, the number of connection terminals for signal input and output significantly increases. There is such a problem. The size of the display panel is determined by the electronic device to be mounted, and the position where the connection terminals can be arranged is also limited. Therefore, in addition to the connection terminals for inputting video signals, when adding terminals for outputting the signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect with the flexible wiring board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. The display panel size is determined by the electronic device to be installed, and the position where connection terminals can be arranged is also limited. Therefore, in addition to the connection terminals for inputting video signals, when adding terminals for outputting the signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect with the flexible wiring board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. The display panel size is determined by the electronic device to be installed, and the position where connection terminals can be arranged is also limited. Therefore, in addition to the connection terminals for inputting video signals, when adding terminals for outputting the signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect with the flexible wiring board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. The display panel size is determined by the electronic device to be installed, and the position where connection terminals can be arranged is also limited. Therefore, in addition to the connection terminals for inputting video signals, when adding terminals for outputting the signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect with the flexible wiring board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect with the flexible wiring board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect with the flexible wiring board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. There is such a problem.

Means for Solving the Problems

[0006] The display device with touch and fingerprint detection functions according to an embodiment of the present invention includes a display unit including a plurality of data signal lines and at least one first sensor electrode, a terminal unit including a first terminal and a second terminal, and a switching circuit disposed between the display unit and the terminal unit, having one input end and a plurality of output ends, and distributing an input signal input to the one input end to the plurality of output ends. The switching circuit has a structure in which the input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal. The display device with touch and fingerprint sensor functions according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction The display device with touch and fingerprint sensor functions according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction The display device with touch and fingerprint sensor functions according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction The input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal.

[0007] The display device with touch and fingerprint sensor functions according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction The display device with touch and fingerprint sensor functions according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction A scanning signal line extending thereto, a pixel overlapping with the second sensor electrode, and a transistor provided in the pixel. The gate electrode of the transistor is connected to the scanning signal line, and the scanning signal line is connected to the second sensor electrode.

Advantages of the Invention

[0008] According to an embodiment of the present invention, by having a switching circuit connected to a plurality of data signal lines, the first sensor electrodes can be arranged at a high density, and even in that case, an increase in the number of connection terminals can be suppressed. As a result, a connection failure with the flexible circuit board at the terminal portion can be reduced. According to an embodiment of the present invention, since the scanning signal line is connected to the second sensor electrode, the scanning signal line can be used in combination as an auxiliary electrode of the second sensor electrode.

Brief Description of the Drawings

[0009] [Figure 1] A developed view of a display device with a touch and fingerprint sensor according to an embodiment of the present invention is shown. [Figure 2] A configuration of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a driving circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention is shown. [Figure 3A] A timing chart for explaining the operation of a display device with a touch and fingerprint sensor according to an embodiment of the present invention is shown. [Figure 3B] A timing chart for explaining the operation of a display device with a touch and fingerprint sensor according to an embodiment of the present invention is shown. [Figure 4] An example of an equivalent circuit of a pixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention is shown. [Figure 5] A configuration of a switching circuit, a terminal portion, and a second driving circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention is shown. [Figure 6] ​​​​​​The configuration of the switching circuit, terminal section, and second drive circuit of a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown. [Figure 7] The configuration of the switching circuit, terminal section, and second drive circuit of a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown. [Figure 8] The configuration of the switching circuit, terminal section, and second drive circuit of a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown. [Figure 9] This shows the pixel arrangement and the arrangement of the first and second sensor electrodes of a display device with touch and fingerprint sensors according to one embodiment of the present invention. [Figure 10] The pixel arrangement and the arrangement of first and second sensor electrodes of a display device with touch and fingerprint sensors according to one embodiment of the present invention are shown, in an example in which the first sensor electrode is provided at a ratio of one electrode for every two pixel rows and the second sensor electrode is provided at a ratio of one electrode for every two pixel rows. [Figure 11A] This shows a plan view of the first sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 11B] This shows a cross-sectional view corresponding to the line A1-A2 in the plan view of the first sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 12A] This shows a plan view of the first sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 12B] This shows a cross-sectional view corresponding to the line B1-B2 in the plan view of the first sensor electrode of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 13A] This shows a plan view of the second sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 13B] This shows a cross-sectional view corresponding to the line C1-C2 in the plan view of the second sensor electrode of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 14A] This shows a plan view of the second sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 14B]This shows a cross-sectional view corresponding to the C3-C4 line in the plan view of the second sensor electrode of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 14C] This shows a cross-sectional view corresponding to the line C5-C6 in the plan view of the second sensor electrode of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 15] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 16A] The configuration of subpixels in a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line D1-D2 shown in Figure 15 is also shown. [Figure 16B] The configuration of subpixels in a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line D3-D4 shown in Figure 15 is also shown. [Figure 17] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 18] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 19A] The configuration of subpixels of a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line D5-D6 shown in Figure 18 is also shown. [Figure 19B] The configuration of subpixels in a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line D7-D8 shown in Figure 18 is also shown. [Figure 20] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 21A]The configuration of subpixels of a display device with touch and fingerprint sensors according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line D9-D10 shown in Figure 20 is shown. [Figure 21B] The configuration of subpixels of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line D11-D12 shown in Figure 20 is shown. [Figure 22A] As an example of a connection structure between the first sensor electrode and the lead wiring of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which the light-shielding layer extends below the terminal portion. [Figure 22B] As an example of a connection structure between the first sensor electrode and the lead wiring of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which the first insulating layer extends below the terminal portion. [Figure 23A] As an example of a connection structure between the first sensor electrode and the lead wiring of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which the light-shielding layer extends below the terminal portion and the second insulating layer extends above the lead wiring. [Figure 23B] As an example of a connection structure between a first sensor electrode and a lead wire of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which the first insulating layer extends below the lead wire and the second insulating layer extends above the lead wire. [Figure 24A] As an example of a connection structure between the first sensor electrode and the lead wiring of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which a light-shielding layer, a first insulating layer, and a second insulating layer extend below the lead wiring and terminal portion. [Figure 24B] As an example of a connection structure between the first sensor electrode and the lead wiring of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which the first insulating layer and the second insulating layer extend below the terminal portion. [Figure 25A] As an example of a connection structure between a first sensor electrode and a lead wire of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a light-shielding layer is provided on the lower side of the terminal portion, and a configuration is shown in which the lead wire is connected to the first sensor electrode by a plurality of contact holes. [Figure 25B]As an example of a connection structure between a first sensor electrode and a lead wire in a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a configuration is shown in which the lead wire is connected to the first sensor electrode by a plurality of contact holes. [Figure 26] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and flexible circuit board of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 27] This shows the wiring structure of a flexible circuit board for a display device with touch and fingerprint sensors according to one embodiment of the present invention. [Figure 28] This shows the connection structure between the terminal portion and a flexible circuit board of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 29] This shows the connection structure between the terminal portion and a flexible circuit board of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 30] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and flexible circuit board of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 31] This shows the wiring structure of a flexible circuit board for a display device with touch and fingerprint sensors according to one embodiment of the present invention. [Figure 32] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and drive circuit of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 33] An example of an output switching circuit for a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 34] An example of an output switching circuit for a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 35] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and drive circuit of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 36A] This shows a plan view of the second sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 36B]The structure of the second sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the C7-C8 line shown in the plan view is also shown. [Figure 36C] The structure of the second sensor electrode of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown, and a cross-sectional view corresponding to the line C9-C10 shown in the plan view is also shown. [Figure 37] This shows a timing chart illustrating the operation of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Figure 38] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and drive circuit of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 39] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and drive circuit of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 40] This shows the connection structure between the terminal section and the drive circuit of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 41] An example of an equivalent pixel circuit provided in a touch and fingerprint sensor display device according to one embodiment of the present invention is shown. [Figure 42] This shows a timing chart illustrating the method for driving pixels in a display device with touch and fingerprint sensors according to one embodiment of the present invention. [Figure 43] An example of an equivalent pixel circuit provided in a touch and fingerprint sensor display device according to one embodiment of the present invention is shown. [Figure 44] This shows a timing chart illustrating the method for driving pixels in a display device with touch and fingerprint sensors according to one embodiment of the present invention. [Figure 45] This shows the connection structure between the terminal portion and a flexible circuit board of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 46] The configuration of the display unit, touch and fingerprint sensor unit, switching circuit, and drive circuit of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention is shown. [Figure 47]This shows the arrangement of data signal lines and common wiring provided in the display unit of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 48] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 49] This shows a cross-sectional view of a sub-pixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 50] The figure shows a planar layout of organic EL elements provided in the subpixels of a touch and fingerprint sensor display device according to one embodiment of the present invention, and the cross-sectional structure between E1-E2 and E3-E4 shown in the figure. [Figure 51] An example of an equivalent pixel circuit provided in a touch and fingerprint sensor display device according to one embodiment of the present invention is shown. [Figure 52] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 53] This shows a cross-sectional view of a sub-pixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 54] An example of a planar layout of a drive transistor, selection transistor, capacitive element, and EL element constituting a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention is shown. [Figure 55] This shows a cross-sectional view of a sub-pixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 56] This is a cross-sectional view of a sub-pixel of a touch and fingerprint sensor display device according to one embodiment of the present invention, showing a structure in which a wire grid polarizer and a light scattering layer are provided. [Figure 57] This is a cross-sectional view of a sub-pixel of a touch and fingerprint sensor display device according to one embodiment of the present invention, showing a structure in which a wire grid polarizer and a light scattering layer are provided. [Figure 58]This shows a cross-sectional structure of a wire grid polarizer provided in the display section of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 59] This shows a cross-sectional structure of a wire grid polarizer provided in the display section of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 60] This shows the relationship between a wire grid polarizer provided on the display unit of a touch and fingerprint sensor display device according to one embodiment of the present invention and the polarization axis of a polarization axis rotating plate. [Figure 61] This shows the arrangement of wire grid polarizers provided on the display unit of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 62] This shows the arrangement of wire grid polarizers provided on the display unit of a touch and fingerprint sensor display device according to one embodiment of the present invention. [Figure 63A] As an example of a connection structure between a first sensor electrode and a lead wire in a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a connection structure between a second sensor electrode and a lead wire formed on the same layer as the data signal line is shown. [Figure 63B] As an example of a connection structure between a first sensor electrode and a lead wire in a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a connection structure between a second sensor electrode and a lead wire formed in the same layer as the scanning signal line is shown. [Figure 64A] As an example of a connection structure between a first sensor electrode and a lead wire in a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a connection structure between the first sensor electrode and a lead wire formed in the same layer as the scanning signal line is shown. [Figure 64B] As an example of a connection structure between the first sensor electrode and the lead wiring of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a connection structure between the second electrode of an organic EL element and the lead wiring is shown. [Figure 65A] The connection structure between the data signal line and the lead wiring is shown as a connection structure between the first sensor electrode and the lead wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 65B]As an example of a connection structure between a first sensor electrode and a lead wire of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention, a connection structure between a second sensor electrode and a lead wire is shown. [Figure 66] This is a cross-sectional view of a sub-pixel of a touch and fingerprint sensor display device according to one embodiment of the present invention, showing a structure in which a wire grid polarizer and a light scattering layer are provided. [Figure 67] This shows the arrangement of wire grid polarizers provided in a display device with touch and fingerprint sensors according to one embodiment of the present invention. [Figure 68] This document shows the cross-sectional structure and operating principle of a wire grid polarizer provided in the display section of a touch and fingerprint sensor-equipped display device according to one embodiment of the present invention. [Modes for carrying out the invention]

[0010] Embodiments of the present invention will be described below with reference to the drawings, etc. However, the present invention has many differences. This specification includes, and is not construed to be limited to, the embodiments illustrated below. The attached drawings, in order to make the explanation clearer, show the width, thickness, and shape of each part compared to the actual appearance. While the appearance and other aspects may be represented schematically, this is merely an example, and within the scope of this invention... The contents are not necessarily limited. Furthermore, in this invention, the specific contents described in a certain drawing are not necessarily limited. When an element of one drawing is identical or corresponds to a specific element of another drawing, A single symbol (or a symbol with a, b, etc. added after the number written as the symbol) is attached, and Explanations of the responses may be omitted as appropriate. Furthermore, "1st," "2nd," etc., are added to each element. The characters used are convenient markers used to distinguish each element, and do not require any special explanation. It has no further meaning beyond that.

[0011] In this specification, if one member or region is "on top of (or below)" another member or region In that case, unless otherwise specified, this is the case when it is directly above (or directly below) another component or area. This includes cases where it is located above (or below) other members or regions, not just in the same place. A component is included between a member or region above (or below) a material or region. This includes cases where this is the case.

[0012] [First Embodiment] This embodiment describes an example of a display device in which a display unit and a touch and fingerprint sensor unit are arranged in a stacked configuration. show.

[0013] 1-1. Configuration of a display device with touch and fingerprint sensors Figure 1 is an exploded view of a display device 100 with touch and fingerprint sensors according to one embodiment of the present invention. The display device 100 with touch and fingerprint sensors has a table with multiple pixels 104 arranged on it. The display unit 102, at least one first sensor electrode 112 and at least one second sensor Includes a touch and fingerprint sensor section 110 including an electrode 114. A shield electrode 116 is positioned between the pattern sensor unit 110 and the shield electrode 116.

[0014] At least one first sensor electrode 112 is positioned to extend in the Y direction, and at least Another second sensor electrode 114 is positioned to extend in the X direction. The first sensor electrode 112 is a plurality of first sensor electrodes (hereinafter similarly designated with the reference numeral "112"). It consists of multiple first sensor electrodes 112 arranged in the X direction. At least one second sensor The sensor electrode 114 consists of a plurality of second sensor electrodes (hereinafter similarly designated with the reference numeral "114"). Therefore, multiple second sensor electrodes 114 are arranged in the Y direction. Multiple first sensor electrodes 112 and Multiple second sensor electrodes 114 are arranged to intersect with an insulating layer (not shown) in between. .

[0015] The area outside the display unit 102 contains the first drive circuit 118 and the switching circuit 120 ("multiplex"). A "demultiplexer" (also called a "demultiplexer") and terminal section 122 are provided. Shield The electrode 116 is used to electrically isolate the display unit 102 from the touch and fingerprint sensor unit 110. It is provided there. A constant potential (for example, ground potential) is applied to the shield electrode 116.

[0016] Each of the multiple pixels 104 includes a light-emitting element. Examples of light-emitting elements include electroluminescent elements. EL elements (hereinafter also referred to as "EL elements") are used. Multiple pixels 104 Each EL element has a bottom emitter that emits light on the side of the shield electrode 116. It is a symmetric type. First sensor electrode 112, second sensor electrode 114, and shield electrode 11 6 is translucent. First sensor electrode 112, second sensor electrode 114, and shield electrode 116 is formed of a transparent conductive film. Alternatively, the first sensor electrode 112, the second sensor electrode 11 4. The shield electrode 116 has an opening that matches the arrangement of the multiple pixels 104. It may be. With this configuration, the light emission of the EL element is transmitted to the shield electrode 116 and touch And it is emitted through the fingerprint sensor unit 110.

[0017] The touch and fingerprint sensor-equipped display device 100 allows the user to touch the image displayed on the display unit 102. The device has a configuration that allows it to be viewed from the side where the fingerprint sensor unit 110 is provided. The sub-section 110 is provided so as to overlap with the display section 102, and is equipped with a touch and fingerprint sensor. The display device 100 can detect touch and fingerprints at any position on the display screen.

[0018] A sealing layer 124 may be provided on top of the display unit 102. The sealing layer 124 is a display It is provided to protect part 102, the first drive circuit 118, and the switching circuit 120. The composition of layer 124 is arbitrary. For example, the sealing layer 124 may consist of a silicon oxide film and silicon nitride. It is formed with an inorganic insulating film such as a film. The sealing layer 124 is made of polyimide resin, acrylic resin, etc. Alternatively, they may be formed using resin materials such as epoxy resin.

[0019] Figure 2 shows the display unit 102 of the touch and fingerprint sensor equipped display device 100 according to this embodiment. Touch and fingerprint sensor section 110, first drive circuit 118, switching circuit 120, terminal section 122, The second drive circuit 128 is shown. Display unit 102, touch and fingerprint sensor unit 110, first drive cycle The path 118, the switching circuit 120, and the terminal section 122 are provided on a transparent resin substrate 200. The second drive circuit 128 is mounted on the flexible circuit board 126. 8 is mounted on the flexible circuit board 126 using COF (Chip on Film).

[0020] The display unit 102 includes a plurality of pixels 104. The plurality of pixels 104 are arranged, for example, in a stripe pattern. Arrays such as column, delta, Bayer, pentile, and diamond pentile arrays. The display unit 102 is provided with data signal lines 108 and scan signal lines (not shown). This can be done for multiple pixels 104 arranged in the first direction (column direction) and the second direction (row direction). The data signal line 108 extends in the first direction (column direction), and the scan signal line intersects with the first direction. It is arranged to extend in the second direction (row direction).

[0021] The first drive circuit 118 is located in the area outside the display unit 102 (hereinafter also referred to as the "peripheral area"). It is arranged. The first drive circuit 118 is connected to a scan signal line (not shown). The track 118 is arranged along one side of the display unit 102. Multiple data signal lines 1 (not shown) 08 is arranged in the first direction (column direction) and is connected to the switching circuit 120.

[0022] A terminal section 122, on which multiple connection terminals are arranged, is provided at one end of the transparent resin substrate 200. The switching circuit 120 is located in the area between the display unit 102 and the terminal unit 122. 0 has the function of distributing one input to multiple outputs. The switching circuit 120 has terminal section 122 A single connection terminal is provided to connect to multiple data signal lines 108.

[0023] The touch and fingerprint sensor unit 110 comprises a plurality of first sensors extending in a first direction (column direction). It includes an electrode 112 and a plurality of second sensor electrodes 114 extended in a second direction (row direction). Each of the multiple first sensor electrodes 112 is connected to a connection terminal provided on the terminal section 122. Multiple second sensor electrodes 114 are connected to the first drive circuit 118. The sensor electrode 112 and the multiple second sensor electrodes 114 intersect with an insulating layer (not shown) in between. They are positioned in such a way that they function as a fingerprint sensor and a touch sensor.

[0024] The flexible circuit board 126 includes a first drive circuit 118, a switching circuit 120, and a first sensor. Includes wiring connecting the electrode 112 and the second drive circuit 128. Flexible circuit board 1 26 is connected to the connection terminal of terminal section 122 via an anisotropic conductive material. Second drive circuit 12 The scan signal line drive circuit block 130 of 8 is connected to the first drive circuit 118 and the data signal The line drive circuit block 132 is connected to the switching circuit 120 and the touch and fingerprint sensor detection circuit Block 134 is connected to the first sensor electrode 112.

[0025] In the second drive circuit 128, the scan signal line drive circuit block 130 of the display unit 102 First drive circuit 11 outputs scanning signals and scan signals from the touch and fingerprint sensor unit 110. The data signal line drive circuit block 132 has the function of outputting a signal to drive 8. The touch and fingerprint sensor detection circuit block 134 has the function of outputting a video signal, and the first 1. The sensing signal output from the sensor electrode 112 is amplified and used as the digital output of the sensor. It has the function of generating a signal.

[0026] Figure 2 shows that the second drive circuit 128 integrates multiple circuit blocks onto a single semiconductor chip. An example of a composite integrated circuit (composite IC) is shown. Using such a composite integrated circuit... This reduces the number of steps compared to mounting individual IC chips, thus lowering manufacturing costs. This can be reduced. Note that the second drive circuit 128 is not limited to this example, and each Circuit blocks may be implemented using individual integrated circuits.

[0027] Figures 3A and 3B show the timing of the touch and fingerprint sensor display device 100 shown in Figure 2. A chart is shown. The display device 100 with touch and fingerprint sensors has a first drive circuit 118. , the scanning signal line drive circuit of the display unit 102 and the scan signal output of the touch and fingerprint sensor unit 110 It also functions as a power circuit. Therefore, the display device 100 with touch and fingerprint sensor has a display period The system is driven so that the sensing period alternates between the two.

[0028] Figure 3A shows an example where a sensing period appears for each display period of one frame. Figure 3B shows 2 This example shows a sensing period occurring once per frame display period. The length of the interval is arbitrary and can be set to be shorter than the duration of one frame. Frame frequency Since the frequency is 60Hz or higher, even if a sensing period is provided between frames, the display unit 102 To display an image while simultaneously performing touch or fingerprint sensing without affecting vision. It is possible.

[0029] 1-2. Equivalent Circuit of a Pixel Figure 4 shows an example of the equivalent circuit of pixel 104. Pixel 104 is the first sub-pixel 105r, the second It includes a second sub-pixel 105g and a third sub-pixel 105b. The first sub-pixel 105r is driven by a transistor Includes a zista 136, a selection transistor 138, a capacitive element 140, and an EL element 142. The second sub-pixel 105g and the third sub-pixel 105b have the same configuration. In Figure 4, the drive The symbols indicating transistor 136 and selection transistor 138 are semiconductors with two gate electrodes. This shows a dual-gate structure with body layers in between. The drive transistor 136 is the lower one It has a first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 is lower It has a first gate electrode 152 on the side and a second gate electrode 153 on the upper side. 36 and the selected transistor 138 are n-channel transistors.

[0030] The second gate electrode 153 of the selection transistor 138 is connected to the scan signal line 106a, and the source side is The data signal line 108 and the drain side of the capacitive element 140 and the second drive transistor 136 It is connected to the gate electrode 151. The first gate electrode 150 of the drive transistor 136 is connected to the gate electrode 151. The wiring 144b, the source side of which is the common electrode 144a, and the drain side of which is the shadow of the EL element 142 It is connected to the pole. Capacitive element 140 has one terminal (first terminal) selected by transistor 138 The drain side and the other terminal are connected to the common wiring 144b. Anode of EL element 142 It is connected to power line 154.

[0031] In Figure 4, the common electrode 144a and the common wiring 144b are distinguished in the equivalent circuit. As shown, both are at the same potential and are fixed at a constant potential (for example, ground potential). They are functionally identical in this respect. Power line 154 is common electrode 144a, common wiring 1 A power supply potential VDD higher than the potential of 44b is applied. The drive transistor 136 is in the ON state. At that time, current flows from the power line 154 to the common electrode 144a of the EL element 142. This is the state in which the current flowing at this time is also the drain current of the drive transistor 136. The current (which is also the light emission intensity of the EL element) is controlled by the potential of the second gate electrode 151. It is possible.

[0032] Note that the equivalent pixel circuit shown in Figure 4 is just one example, and the touch and fingerprint sensor according to this embodiment The display device 100 with a sub-signal can also be fitted with a pixel circuit having a different circuit configuration. For example, Then, a pixel circuit incorporating a circuit to correct the threshold voltage of the drive transistor is applied. It is possible.

[0033] 1-3. Switching Circuit Figure 5 shows the switching circuit 120 of the touch and fingerprint sensor-equipped display device 100 according to this embodiment. (120_1~120_h) shows the configuration of the terminal section 122 and the second drive circuit 128. Switching cycle The paths 120 (120_1 to 120_h) and terminal section 122 are provided on the transparent resin substrate 200. The second drive circuit 128 is mounted on the flexible circuit board 126.

[0034] The terminal section 122 includes a first connection terminal 146a and a second connection terminal 146b. 146a is a terminal connected to the switching circuit 120 (120_1~120_h), and is the second connection The connecting terminal 146b is a terminal that is connected to the first sensor electrode 112 (112_1~112_k). Yes. The flexible circuit board 126 has a third connection terminal 148a and a fourth connection terminal 148b. This includes the first connection terminal 146a to the third connection terminal 148a, and the second connection terminal 146b to the fourth. It is connected to connection terminal 148b. The connection terminal is provided on the transparent resin substrate 200 side and flex The connection terminals provided on the Bull circuit board 126 are connected by an anisotropic conductive adhesive.

[0035] The switching circuit 120 (120_1~120_h) includes one input terminal and three output terminals. The switching circuit 120 (120_1~120_h) is provided between the input terminal and the output terminal. 1 Switching element 156a, 2 Switching element 156b, and 3 Switching element Includes child 156c. First switching element 156a, second switching element 156b, and The third switching element 156c is formed by a transistor. 56a, the second switching element 156b, and the third switching element 156c are transistors The control signals 157a, 157b, and 157c connected to the gates of the zistor turn on and The "off" setting is controlled.

[0036] The first switching circuit 120_1 includes a first switching element 156a and a second switching element 1 56b, and a third switching element 156c, including control signal lines 157a, 157b, 1 The first switching element 1 is switched exclusively by the 57c control signal. 56a is controlled by the control signal on control signal line 157a, and the second switching element 156b is controlled by the control signal The control signal on line 157b, and the third switching element 156c, control signal line 157 The control signal c causes one of these switching elements to activate One element is turned on, and the other two switching elements are controlled to turn off. The operation is the same for the other switching circuits 120_2 to 120_h.

[0037] The first switching circuit 120_1 has the first connection terminal 146a connected to the input terminal and multiple terminals at the output terminal. The data signal lines 108 (S1~S3) are connected. For details, see the first switching circuit 120_1 In this configuration, the first switching element 156a connects to the first connection terminal 146a and the data signal line 108 (S1) is connected to the second switching element 156b and the first connection terminal 146a. It is connected between the signal line 108 (S2) and the third switching element 156c is the first connection It is connected between terminal 146a and data signal line 108 (S3). Other switching circuits 120_ The same circuit configuration is used for 2 to 120_h. The first switching circuit 120_1 is the first switch Switching element 156a, second switching element 156b, third switching element 156 The switching operation of c converts the signal input to the first connection terminal 146a into multiple data It has the function of distributing to signal lines 108 (S1~S3). Other switching circuits 120_2~120 _h has a similar function.

[0038] Between the first switching circuit 120_1 and the second switching circuit 120_2 is the first sensor electrode 112_ 1 is installed. The first sensor electrode 112_1 is connected to the second connection terminal 146b. The first sensor electrodes 112_2~112_k are similarly connected to the other switching circuits 120_2~120_h It is placed between them.

[0039] The shield electrode 116 is provided so as to overlap with the area of ​​the terminal portion 122. The end of 116 is located outside the first connection terminal 146a and the second connection terminal 146b. The first connection terminal 146a and the second connection terminal 146b are separated by an insulating layer (not shown) The first connection terminal 146a and the second connection terminal 146b are provided on the upper side of the rud electrode 116. It is provided above the shield electrode 116 to connect the flexible circuit board 126. It can withstand the pressure applied during the bonding process, preventing indentation, deformation, and peeling. Furthermore, the first connection terminal 146a and the second connection terminal 146b are located above the shield electrode 116. By providing this feature, the video signal is transmitted as noise to the touch and fingerprint sensor unit 110. This can prevent that from happening.

[0040] The first sensor electrodes 112_1 to 112_k are shielded electrodes separated by an insulating layer (not shown). It is located on the lower side of 116. It extends from the first sensor electrode 112_1 and the second connection terminal 146b. A first opening 158 is provided in the shield electrode 116 to connect to the wiring, Inside the first opening 158, a first contact hole 159 penetrates an insulating layer (not shown). It is provided. The first sensor electrode 112_1 and the second connection terminal 146b are connected by the first opening 158 It is connected by a first contact hole 159 having a hole diameter smaller than the diameter of the other part.

[0041] The second drive circuit 128 connects to the data signal line drive circuit block 132 and the touch and fingerprint sensor. Includes detection circuit block 134 (and further, scan signal line drive circuit block 13, not shown) (Including 0). The data signal line drive circuit block 132 is a switching circuit 120 (120_1~1 Includes a circuit that controls the operation of 20_h). In the second drive circuit 128, each circuit The lock placement is arbitrary, and the data signal line drive circuit block 132 and touch and fingerprint sensors The arrangement of the detection circuit block 134 may be different from the arrangement shown in the diagram.

[0042] In the terminal section where connection terminals are arranged, a plurality of data signal lines and a plurality of first sensor electrodes are provided. If you try to connect all of them separately and independently using individual connectors, the connector pins The pitch becomes smaller. Generally, when the pitch of the connection terminals provided on the terminal part becomes smaller, the flexibility increases. The problem is that connections to the circuit board become difficult, leading to defects and a decrease in manufacturing yield. ru.

[0043] In contrast, the touch and fingerprint sensor equipped display device 100 according to this embodiment includes a switching circuit 1 The number of connection terminals is reduced by providing 20 (120_1~120_h). In other words, by providing the switching circuit 120, multiple connections can be made to one first connection terminal 146a. It becomes possible to connect a number of data signal lines 108 (for example, S1 to S3), and connection terminals The number of connections has been reduced. As a result, the terminal portion 122 is connected to the first sensor electrode 112. Even with the addition of the second connection terminal 146b, a simple increase in the number of connection terminals is prevented, and the narrow pin of the connection terminals is maintained. This prevents the connection from becoming faulty. As a result, poor connection with the flexible circuit board 126 is prevented. It can be prevented.

[0044] Figure 6 shows the first switching element constituting the switching circuit 120 (120_1~120_h). 156a, second switching element 156b, and third switching element 156c are dual An example is shown using a double-gate type transistor. The first switching element is 156a, and the second is... The switching element 156b and the third switching element 156c are dual-gate type By using transistors, the rise and fall times of the switching become steeper. The switching circuit 120 (120_1~120_h) can operate even if its drive frequency is increased. This allows the frame frequency of the touch and fingerprint sensor-equipped display device 100 to be increased. Even in that case, the switching circuit 120 (120_1~120_h) is synchronized with the frame frequency. It can be operated. Also, the first switching element 156a, the second switching element 156b and the third switching element 156c are used as dual-gate type transistors. This reduces the off-current (leakage current when the switch is off), ensuring reliable operation. This allows for efficient switching operations while reducing power consumption.

[0045] Figure 7 shows an example where the end of the shield electrode 116 is positioned inside the terminal portion 122. The end of the wire electrode 116 is positioned in the region between the terminal portion 122 and the first opening 158, The first connection terminal 146a and the second connection terminal 146b are located on the outside of the shield electrode 116. According to this structure, the first connection terminal 146a and the second connection terminal 146b, and the seal By reducing the parasitic capacitance between the electrode 116 and the other electrode, power consumption can be reduced. Note that in Figure 7, the configuration other than the shield electrode 116 is the same as that shown in Figure 5.

[0046] Figure 5 shows that when one first sensor electrode 112 is provided for a row of pixels 104... The configuration is shown below. If a certain degree of reduced sensitivity as a fingerprint sensor is acceptable, then the first It is also possible to reduce the number of sensor electrodes 112. For example, a two-row arrangement of pixels 104. A single first sensor electrode 112 may be provided for this. Figure 8 shows the switching circuit in this case. The arrangement of 120 and the first sensor electrode 112 is shown. As shown in Figure 8, the first sensor electrode 112 Even when reducing the number of connections, the switching circuit 120 can be arranged, and the terminal section 122 is connected. The terminal pitch can be increased.

[0047] Note that in Figures 5, 6, 7, and 8, the connection terminals of the terminal section 122 are uniformly spaced. Although not yet done, the yield of the process of connecting the terminal section 122 and the flexible circuit board 126 To further improve performance, it is preferable to arrange the connection terminals at a uniform pitch.

[0048] 1-4. Structure of the sensor electrode 1-4-1. First sensor electrode Figure 9 shows an array of multiple pixels 104, and multiple first sensor electrodes 112 and multiple second sensors Figure 9 shows the arrangement of the subelectrode 114. Multiple pixels 104 correspond to the first subelectrode 114. Pixel 105r, second sub-pixel 105g corresponding to green (G), third sub-pixel corresponding to blue (B) It includes pixel 105b, and subpixels corresponding to each color are arranged in a striped pattern in the first direction (column direction). An example is shown. The first sensor electrode 112 extending in the first direction (column direction) is connected to multiple pixels 1 The arrangement of 04 corresponds to the first direction (column direction) and extends in the second direction (row direction). The second sensor electrode 114 is also arranged in accordance with the second direction (row direction) arrangement of the multiple pixels 104. ru.

[0049] To detect fingerprints, the first sensor electrodes 112 are arranged at a pitch of 25 μm to 120 μm. This is necessary, and a pitch range of 45 μm to 75 μm is most suitable. Second sensor power The pole 114 also needs to be provided at a similar pitch. The first sensor electrode 112 and the second sensor If the pitch of the electrodes 114 is too large, the resolution will decrease and fingerprints will not be detected accurately. On the other hand, reducing the pitch to less than 25 μm did not improve the accuracy of fingerprint detection, and the number of sensor electrodes increased. It would only be overkill.

[0050] Although not shown in Figure 9, the data signal lines are the first sub-pixel 105r, the second sub-pixel 105g, And it is provided in correspondence with the arrangement of the third subpixel 105b in the first direction (column direction). The first sensor electrode 112 is provided at a ratio of one electrode for every three data signal lines. Data signal lines corresponding to pixel 105r, second sub-pixel 105g, and third sub-pixel 105b The pitch is, for example, the display panel of a 5.5-inch, full HD-compatible smartphone. In this case, it becomes 17 μm. Therefore, the first sensor electrode 1 corresponds to the column direction of each pixel 104. When 12 is installed, the pitch of the first sensor electrode 112 becomes 51 μm. In this case, Figure 5, Referring to Figures 6 and 7, the first connection terminals 146a are arranged at a pitch of 51 μm, and Since the second connection terminal 146b will be positioned between them, the connection end at terminal section 122 The pitch of the child is 25.5 μm. Regarding the second sensor electrode 114, it corresponds to the first sub-pixel. Corresponding to the second direction (row direction) of 105r, the second sub-pixel 105g, and the third sub-pixel 105b The pitch of the scanning signal lines becomes 51 μm, and the pitch of the second sensor electrode 114 is also 51 μm. It becomes m.

[0051] For fingerprint detection sensors, the pitch of the sensor electrodes should be approximately 50 μm from a resolution standpoint. It is considered necessary. In this case, the number of first sensor electrodes 112 may be reduced. For example, the number of first sensor electrodes 112 They may be arranged every other pixel. In that case, following the example above, the first sensor electrode 112 The pitch becomes 102 μm, and the pitch of the connection terminals in terminal section 122 is widened to about 34 μm. It becomes possible to increase the risk.

[0052] Figure 10 shows the arrangement of the first sensor electrode 112 and the second sensor electrode 114 shown in Figure 9. An example is shown where the pitch of both sensor electrodes is increased. That is, Figure 10 shows the pixels One first sensor electrode 112 is provided for each of the 104 arrays in the column direction, and in the row direction, This shows an example in which one second sensor electrode 114 is provided for each row of arrays. The pitch between the sensor electrode 112 and the second sensor electrode 114 is approximately 100 μm, but Even a pitch can be used to detect a fingerprint. The arrangement of the first sensor electrode 112 shown in Figure 10 As shown in Figure 8, the arrangement of the connection terminals in the switching circuit 120 and the terminal section 122 for each row is as follows. This allows for a wider spacing between connection terminals.

[0053] Figures 11A and 11B show an example of the first sensor electrode 112. Figure 11A shows the first sensor Figure 11B shows a plan view of electrode 112, and Figure 11B shows a cross-sectional view corresponding to the section between A1 and A2.

[0054] The first sensor electrode 112 extends along the first direction (column direction) in the display unit 102. It has a tripe-like pattern. The first sensor electrode 112 is a light-transmitting first sensor electrode. It is formed in layer 204. The first sensor electrode layer 204 is made of, for example, indium tin oxide (Indi um tin oxide (ITO), aluminum (Al) or gallium (Ga) doped sodium oxide. Lead (Zinc Oxide: ZnO), Indium Zinc Oxide (IZO), Oxide Titanium oxide (TiO2) doped with tin (Tin Oxide: SnO2) and niobium (Nb). x ) etc. A conductive metal oxide, titanium nitride (TiN x ), titanium oxynitride (TiON), etc. Conductive transparent conductive films such as metal nitrides or metal oxynitrides, polyaniline, graphene, etc. It is formed from an electrically charged organic material. The width W1 of the first sensor electrode 112 is the width of the sub-pixel 105. It is provided to be wider than Wp. The first sensor electrode layer 204 is the first side of the sub-pixel 105 Since they are arranged in accordance with the direction (column direction), the first sensor electrode 112 is for the sub-pixel 105 It is installed to cover the entire structure.

[0055] A first auxiliary electrode 205a may be added to the first sensor electrode layer 204. Electrode 205a is along the upper edges on both sides of the striped pattern of the first sensor electrode layer 204 It has a fine linear pattern. The first auxiliary electrode 205a is arranged in the first direction (row direction). In the region where the adjacent subpixels 105 are spaced apart, a band-shaped pattern connects the thin linear patterns on both sides. It may contain n. The first auxiliary electrode 205a forms the first sensor electrode layer 204. It is formed from a material with lower resistance than a transparent conductive film material. For example, the first auxiliary electrode 205a is aluminum Metal films such as nium (Al), metal nitrides such as titanium nitride (TiN), titanium silicide ( TiSi x It is formed from conductive materials such as metal silicides. The formed first auxiliary electrode 205a is connected to the data signal line 108 provided on the display unit 102. It is formed with qualitatively the same width (thickness) and is positioned to overlap with the data signal line 108. By providing a first auxiliary electrode 205a in contact with the sensor electrode layer 204, the first sensor electrode 11 This allows for a reduction in the resistance of component 2.

[0056] Because the width W1 of the first sensor electrode layer 204 is greater than the width Wp of the sub-pixel 105, the sub-pixel The resistance of the first sensor electrode 112 can be reduced without decreasing the aperture ratio of element 105. For example, the table of a 5.5-inch, full HD compatible smartphone as exemplified above. In the case of the display panel, the width of the first sensor electrode 112 is wider than 17 μm (51 μm / 3) to 20 μm. It can be set to m. Also, the pitch L1 of the strip-shaped pattern of the first auxiliary electrode 205a is It is preferable that the length Lp of the sub-pixel 105 is greater than the pitch L1 of this strip-shaped pattern. The pitch may be the same as that of the scan signal line. Following the example above, the pitch L1 is 51 μm. That's fine.

[0057] The width (thickness) of this strip-shaped pattern is shaped to be substantially the same width (thickness) as the scan signal line 106. This is done and positioned so as to overlap with the scan signal line 106. This arrangement allows the aperture ratio to This makes it possible to reduce the resistance of the first sensor electrode 112 without compromising performance.

[0058] By providing the first auxiliary electrode 205a on the first sensor electrode layer 204 in this way, the first sensor The resistance of the electrode 112 can be reduced. This makes it possible to reduce the resistance of the touch and fingerprint sensor unit 11 This prevents a decrease in sensitivity and response speed.

[0059] Figures 12A and 12B show another example of the first sensor electrode 112. Figure 12A shows the first sensor Figure 12B shows a plan view of the sensor electrode 112, and Figure 12B shows a cross-sectional view corresponding to the section between B1 and B2.

[0060] The first auxiliary electrode 205b is provided in contact with the first sensor electrode layer 204. 05b is a fine linear pattern provided in the central part of the first sensor electrode layer 204, and subpixels It has a shape that is a combination of a strip-shaped pattern provided in the region between the arranged 105s. The first auxiliary electrode 205b is formed of a metal film, a metal nitride film, and a metal silicide film. Figure 12 The first auxiliary electrode 205b, which has the shape shown in A and Figure 12B, connects to the data signal line 10 of the display unit 102. It is formed with essentially the same width (thickness) as line 8 and is positioned to overlap with data signal line 108. The strip-shaped pattern of the first auxiliary electrode 205b is substantially the same width (thickness) as the scan signal line 106. It is formed and positioned to overlap with the scanning signal line 106. The resistance of the first sensor electrode 112 can also be reduced by 5b.

[0061] 1-4-2. Second sensor electrode Figure 13A shows a plan view of the second sensor electrode 114. Figure 13A further shows the second sensor electrode A part of the structure of the selection transistor 138 provided on 114 (first gate electrode 152, The second oxide semiconductor layer 180b and the second gate electrode 153) are shown by dotted lines. Figure 13B is a reference to Figure 1. The cross-sectional structure corresponding to the section between C1 and C2 shown in 3A is shown.

[0062] The second sensor electrode 114 extends along the second direction (row direction) in the display unit 102. It has a tripe-shaped pattern. The second sensor electrode 114 directs the display unit 102 in the second direction (direction). It is provided to traverse along the direction and to have both ends reach the surrounding area. Second sensor electrode 114 The second sensor electrode layer 206 is formed of a light-transmitting second sensor electrode layer 206. It is formed from a transparent conductive film, similar to the sensor electrode layer 204.

[0063] The second sensor electrode 114 is provided with a second auxiliary electrode 207. The second auxiliary electrode 207 is The second auxiliary electrode 207 is provided in contact with the second sensor electrode layer 206. It is provided along the longitudinal direction of 06. The second auxiliary electrode 207 is a metal film, a metal nitride film, and a metal It is formed of a silicide film. Similar to the first sensor electrode 112, the second sensor electrode 114 is also The sensor electrode is formed by a second sensor electrode layer 206 and a second auxiliary electrode 207, thereby reducing resistance. ru.

[0064] Figure 13B shows a transparent resin substrate 200, consisting of a first transparent resin layer 202a and a second transparent resin layer 2 02b, third transparent resin layer 202c, fourth transparent resin layer 202d, first insulating layer 210, second insulating layer This shows a structure in which the edge layer 212 is laminated. The second sensor electrode layer 206 is the second transparent resin layer 202 It is provided between b and the third transparent resin layer 202c. The second auxiliary electrode 207 is the second sensor electrode It is provided between the polar layer 206 and the third transparent resin layer 202c. The shield electrode 116 is the third transparent It is provided on top of the light resin layer 202c. The fourth transparent resin layer 202 is provided on top of the shield electrode 116. Layer d is provided. The first insulating layer 210 is provided on the fourth transparent resin layer 202d. A second oxide semiconductor layer 180b is provided between the first insulating layer 210 and the second insulating layer 212. A second gate electrode 153 is provided on the second insulating layer 212.

[0065] A second light-shielding layer 208b is provided on the lower side of the first gate electrode 152. b is formed from a conductive film continuous with the second auxiliary electrode 207. In other words, as shown in Figure 13A. Thus, the linear pattern of the second auxiliary electrode 207 extending in the second direction (row direction) is selected. The region where transistor 138 is provided has a pattern that protrudes in a convex shape. The second auxiliary electrode 207, which has a turn, serves as the second light-shielding layer 208b for the sub-pixel 105. It has the function of the second light-shielding layer 208b protruding from the second auxiliary electrode 207 in a plan view. The shape is arbitrary and is not limited to the shape shown in Figure 13A.

[0066] The second auxiliary electrode 207 is connected as the scan signal line (gate bus line) 106 of the display unit 102. It also has the function of the second gate electrode 153 is provided on the second insulating layer 212. The gate electrode 153 is separated and provided individually for each sub-pixel 105. This consists of a second insulating layer 212, a first insulating layer 210, a fourth transparent resin layer 202d, and a third transparent resin layer 2 It is connected to the second auxiliary electrode 207 by a third contact hole 163 that penetrates 02c. Shield electrode 1 is placed between the third transparent resin layer 202c and the fourth transparent resin layer 202d. 16 has a third opening d1 which is larger than the hole diameter d2 of the third contact hole 163 An opening 162 is provided. The third contact hole 163 is located inside the third opening 162. It is installed to penetrate the area.

[0067] The first gate electrode 152 is provided connected to the shield electrode 116. The first gate electrode 152 is fixed at the same potential as the shield electrode 116. (Selection transistor) 138 is when a constant potential is applied to the opposite side (back channel side) of the second gate electrode 153. The provision of the first gate electrode 152 suppresses fluctuations in electrical characteristics.

[0068] The structure shown in Figures 13A and 13B is such that the scanning signal line 106 is connected to the second oxide semiconductor layer 180 Since it is positioned below layer b, the thickness of the second insulating layer 212 is approximately 100 nm to 200 nm. It can be made as thin as possible. The second gate electrode 153 does not cross the data signal line 108. Therefore, even if the thickness of the second insulating layer 212 is reduced, a short circuit will not occur between the two. The second insulating layer 212, which functions as a second insulating layer, is made thinner, resulting in excellent switching characteristics and response speed. A fast selection transistor 138 can be obtained.

[0069] Note that Figure 13A shows only the selection transistor 138, and the drive transistor 136 is omitted. However, the metal layer forming the second auxiliary electrode 207 is used to drive the transistor 1 A light-shielding layer can also be provided for 36 in the same way.

[0070] Figures 14A and 14B show that the second sensor electrode 114 has the structure shown in Figures 13A and 13B. A different embodiment is shown. Figure 14A shows a plan view of the second sensor electrode 114. Figure 14A further The structure of a part of the selection transistor 138 provided on the second sensor electrode 114 (first Electrode 152, second oxide semiconductor layer 180b, second gate electrode 153, scanning signal line 10 6) is shown. Figure 14B shows the cross-sectional structure corresponding to the section between C3 and C4 shown in Figure 14A, and Figure 1 4C shows the cross-sectional structure corresponding to the section between C5 and C6 shown in Figure 14A.

[0071] The second sensor electrode 114 is formed by the second sensor electrode layer 206 and the second auxiliary electrode 207. The second auxiliary electrode 207 is positioned along the longitudinal direction of the second sensor electrode 114 in the display unit 102. It has a linear pattern that extends in a certain direction. On the second sensor electrode 114 is the second auxiliary electrode 207 A metal film is formed to create a second light-shielding layer 208b that overlaps with the second oxide semiconductor layer 180b. It gets kicked.

[0072] The second gate electrode 153 and the scanning signal line 106 are provided on the second insulating layer 212. The gate electrode 153 is formed in a pattern that is continuous with the scan signal line 106. That is, The second gate electrode 153 and the scan signal line 106 are formed from the same conductive layer. 153 is provided connected by scan signal lines 106 for each row of sub-pixels 105.

[0073] The scanning signal line 106 is connected to the second auxiliary electrode 207 in the peripheral region. In this configuration, a fourth opening 164 is provided in the shield electrode 116. The scanning signal line 106 is the A fourth opening 164 is provided inside the opening 164 and has a hole diameter smaller than the diameter of the fourth opening 164. The second auxiliary electrode 207 is connected via four contact holes 165. Second light-shielding layer 208b It may be separated from the second auxiliary electrode 207 as shown in the figure, or as shown in Figure 13B. It may be provided so as to be continuous with the second auxiliary electrode 207.

[0074] In this way, by connecting the scanning signal line 106 with the second auxiliary electrode 207 in the peripheral region, Wiring resistance can be reduced. In other words, the second auxiliary electrode 207 is connected to the scanning signal line 10 It can be used as auxiliary wiring for 6.

[0075] Note that Figures 14A and 14C show only the selection transistor 138, and the drive transistor 1 36 is omitted. The drive transistor 136 has a similar structure to the selection transistor 138. The second light-shielding layer 208b is provided using a metal film that forms the second auxiliary electrode 207. It's okay to be there.

[0076] 1-5. Pixel and Sensor Substructures Figure 15 shows the equivalent circuit of Figure 4, with sub-pixels 105 (first sub-pixel 105r, second sub-pixel 10 An example of a planar layout (corresponding to 5g and the third sub-pixel 105b) is shown. In 15, the first sensor electrode 112 and the second sensor electrode 114, and the EL element 142 Details of the layered structure are omitted.

[0077] As shown in Figure 15, the sub-pixel 105 has a drive transistor 136 and a selection transistor 13 8. Includes capacitive element 140 and EL element 142. The area of ​​sub-pixel 105 contains scan signal line 10 6a, data signal line 108, common electrode 144a, and common wiring 144b are provided. The dynamic transistor 136 has a first oxide semiconductor layer 180a in between, and a first gate electrode 150 ( The structure has a lower layer side and a second gate electrode 151 (upper layer side). STA 138 is separated from the first gate electrode 152 (lower side) by the second oxide semiconductor layer 180b. The structure has a second gate electrode 153 (upper side). A first light-shielding layer 208a is provided on the lower side, and a second light-shielding layer is provided on the lower side of the selection transistor 138. A light layer 208b is provided. The first light-shielding layer 208a and the second light-shielding layer 208b are connected to the scanning signal line 1 The first light-shielding layer 208a and the second light-shielding layer are formed from the same conductive layer as the conductive layer forming 06a. 208b is formed by a pattern that is continuous with the scan signal line 106a.

[0078] The drive transistor 136 consists of a first oxide semiconductor layer 180a and a first metal oxide conductive layer 17 The first metal oxide conductive layer 176a and The second metal oxide conductive layer 176b is provided so as to be in contact with the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are separated at their ends. It includes a region positioned to face the first gate electrode 150. Its ends and the separated regions are part of the first gate electrode 150. It is positioned to overlap with the second gate electrode 151 and the first oxide semiconductor layer 180a. The channel of the drive transistor 136 consists of a first metal oxide conductive layer 176a and a second metal oxide conductive layer It is formed in the portion where it separates from the electrode layer 176b.

[0079] The first metal oxide conductive layer 176a is provided in contact with the source wiring 170. 70 is connected to the common electrode 144a via the fifth contact hole 166. The oxide conductive layer 176b is formed in contact with the first electrode 220 that forms the EL element 142. The second metal oxide conductive layer 176b and the first electrode 220 are arranged in a continuous pattern. .

[0080] The second metal oxide conductive layer 176b is extended to the region of the EL element 142, and the first electrode (cathode) Forming 220. The first oxide semiconductor layer 180a is stretched to the region of the EL element 142. A first electron transport layer 222a is formed. The first electron transport layer 222a covers the first electrode 220. It will be set up in the sea.

[0081] The selection transistor 138 consists of a second oxide semiconductor layer 180b and a third metal oxide conductive layer 17 It includes 6c and a fourth metal oxide conductive layer 176d. The 4-metal oxide conductive layer 176d is provided so as to be in contact with the second oxide semiconductor layer 180b. . The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d include a region where their ends are separated and face each other. The ends and the separated region are arranged at positions overlapping with the first gate electrode 152, the second gate electrode 153, and the second oxide semiconductor layer 180b. The channel of the selection transistor 138 is formed in a portion where the third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are separated. The third metal oxide conductive layer 176c is provided so as to include a region overlapping and contacting the data signal line 108. The fourth metal oxide conductive layer 176d is provided so as to be in contact with the drain wiring 173. The fourth metal oxide conductive layer 176d and the drain wiring 173 are provided so as to extend into the region of the capacitor element 140.

[0082]

[0083] The second gate electrode 153 of the selection transistor 138 is provided individually for each sub-pixel 105 and is connected to the scanning signal line 106a(207) through the third contact hole 163. The second gate electrode 151 of the driving transistor 136 is connected to the drain wiring 173 through the seventh contact hole 168.

[0084] The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15).

[0085] FIG. 16A shows a cross-sectional structure of the sub-pixel 105 corresponding to the D1-D2 line shown in FIG. 15. 16B shows a cross-sectional structure of the sub-pixel 105 corresponding to the D3-D4 line shown in FIG. 15. FIG. 16 A shows a cross-sectional structure of the driving transistor 136 and the EL element 142, and FIG. 16B shows a cross-sectional structure of the selection transistor 138 and the capacitive element 140.

[0086] The first sensor electrode 112 and the second sensor electrode 114 are provided on the transparent resin substrate 200. The driving transistor 136, the selection transistor 138, the capacitive element 140, and the EL element 142 are provided on the transparent resin substrate 200. The transparent resin substrate 200 has a structure in which a plurality of transparent resin layers are stacked. The transparent resin substrate 200 has a structure in which a plurality of transparent resin layers are stacked. The transparent resin substrate 200 has a structure in which the first transparent resin layer 202a, the second transparent resin layer 202b, and the third transparent resin layer 202c are stacked. The first sensor electrode 112 is provided between the first transparent resin layer 202a and the second transparent resin layer 202b, and the second sensor electrode 114 is provided between the second transparent resin layer 202b and the third transparent resin layer 202c. The touch and fingerprint sensor unit 110 is provided in a state of being embedded in the transparent resin substrate 200.

[0087] In the display device 100 with a touch and fingerprint sensor according to the present embodiment, the light emission of the pixel 104 (specifically, the EL element 142 provided in each sub-pixel 105) is emitted from the transparent resin substrate 200 side. The first sensor electrode 112 and the second sensor electrode 114 disposed in the region overlapping the pixel 104 are formed of a transparent conductive film so that the light emitted from the pixel 104 can pass through. Further, an opening portion through which light passes may be provided in accordance with the arrangement of the first sensor electrode 112 and the second sensor electrode 114. That is, the first sensor electrode 112 and the second sensor electrode 114 ​​​​​​​​​​​It has a ladder-shaped pattern, such as the first auxiliary electrode 205a shown in Figures 11A and 11B. Metal films such as aluminum (Al), metal nitride films such as titanium nitride (TiN), titanium Reside (TVSi x It may be formed of a metal silicide film such as ).

[0088] First transparent resin layer 202a, second transparent resin layer 202b, third transparent resin layer 202c, and 4. The transparent resin layer 202d has a thickness of 3 μm to 20 μm, preferably 10 μm to 15 μm. The transparent resin substrate 200 is flexible due to its structure in which transparent resin layers of such thickness are laminated. The display device 100 with touch and fingerprint sensors has a transparent resin substrate 200 side. The sensor and display surface are used to detect fingerprints. The first sensor electrode 112 and the second sensor electrode 114 are used to detect fingerprints. When used as an electrode for extraction, it is preferable that the thickness of the first transparent resin layer 202a be thin. The first transparent resin layer 202a and the second transparent resin layer 202b have a thickness of approximately 10 μm to 15 μm. By providing a contact hole, high fingerprint detection sensitivity can be obtained. To form a second transparent resin layer 202b, a third transparent resin layer 202c, and a fourth transparent resin layer 20 For 2d, it is preferable to make it as thin as possible if no pinholes are generated, but the parasitic capacity increases. Since this can cause problems, it is preferable to have a thickness of 3 μm to 5 μm in practice. First transparent The resin layer 202a is the skeletal layer of the transparent resin substrate 200, and therefore has a thickness of 20 μm to 50 μm. It is preferable that it has a certain thickness.

[0089] A first light-shielding layer 208a overlaps the drive transistor 136 on the second sensor electrode 114. A second light-shielding layer 208b is provided that overlaps with the selection transistor 138. The first light-shielding layer 208a and the second light-shielding layer 208b are formed of a metal film, a metal nitride film, or a metal silicide film. As shown in FIG. 15, the first light-shielding layer 208a and the second light-shielding layer 208b are provided in the same layer as the scanning signal line 106a (which is also the second auxiliary electrode 207) provided on the second sensor electrode 114. provided.

[0090] A shield electrode 116 is provided between the drive transistor 136, the selection transistor 138, the capacitive element 140, and the EL element 142 and the first sensor electrode 112 and the second sensor electrode 114. The shield electrode 116 is provided between the third transparent resin layer 202c and the fourth transparent resin layer 202d. The shield electrode 116 is provided over the entire display unit 102.

[0091] The shield electrode 116 is formed of a transparent conductive film. Examples of the transparent conductive film include conductive metal oxides such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), and tin oxide (SnO2), metal nitrides or metal oxynitrides such as titanium nitride (TiNx) and titanium oxynitride (TiON), and conductive organic materials such as polyaniline and graphene. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper and may have a structure in which openings are provided so that light can pass through in accordance with the arrangement of the pixels. A common electrode 144a and a common wiring 144b are provided in contact with the upper surface of the shield electrode 116. The common wiring 144b is provided so as to extend in the same direction as the direction in which the scanning signal line 106a extends. The common electrode 144a and the common wiring 144b are made of aluminum (Al). tin (Indium Tin Oxide: ITO), zinc oxide (ZnO), indium zinc oxide (Indium Zinc Oxide: IZO), tin oxide (SnO2), and other conductive metal oxides, titanium nitride (TiNx), titanium oxynitride (TiON), and other metal nitrides or metal oxynitrides having conductivity transparent conductive films, and conductive organic materials such as polyaniline and graphene are used. Further, in another form, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper and may have a structure in which openings are provided so that light can pass through in accordance with the arrangement of the pixels. The common wiring 144b is provided so as to extend in the same direction as the direction in which the scanning signal line 106a extends. <​​) is formed of a metal film such as. Common electrode 144a, common wiring 144b and shield electrode 1 16 is at the same potential and a constant potential is applied. For example, the shield electrode 116 and the common electrode. The ground potential is applied to common wiring 144a and 144b.

[0092] The first gate electrode 150 of the drive transistor 136 is placed on the shield electrode 116, and The first gate electrode 152 of the selector transistor 138 is provided. The first gate electrode 152 is formed in the same layer as the common electrode 144a and the common wiring 144b. The first gate electrode 150 and the first gate electrode 152 are formed of a metal film. The electrode 150 and the first gate electrode 152 are provided in contact with the upper surface of the shield electrode 116. The first gate electrode 150 and the second gate electrode 152 are subjected to the same potential as the shield electrode 116. It can be done.

[0093] In the touch and fingerprint sensor unit 110, the first sensor electrode 112 is the receiver electrode (Rx The electrode is the second sensor electrode 114, and the second sensor electrode 114 functions as a transmitter electrode (Tx electrode). It has. When the touch and fingerprint sensor unit 110 is driven, the second sensor electrode 114 has a rectangular A pulse voltage is applied. This is generated by the rectangular pulse voltage applied to the second sensor electrode 114. The electric field is shielded by the shield electrode 116. Therefore, the display unit 102 and the touch and fingerprint sensor unit 110 operate without interfering with each other. This becomes possible. The touch and fingerprint sensor unit 110 is affected by noise associated with the operation of the display unit 102. This eliminates the need for highly accurate fingerprint detection. Furthermore, the display unit 102 is touch-sensitive. Furthermore, the image can be displayed in a stable state without being affected by the fingerprint sensor unit 110.

[0094] A fourth transparent resin layer 202d is provided on top of the shield electrode 116. 02a, second transparent resin layer 202b, third transparent resin layer 202c, and fourth transparent resin layer 202 Since d is formed by applying a resin composition, the first sensor electrode 112 and the second sensor electrode 11 4, first gate electrode 150, first gate electrode 152, and common electrode 144a, common distribution The irregularities caused by line 144b can be filled in, and the surface of the fourth transparent resin layer 202d can be flattened. It is possible.

[0095] First transparent resin layer 202a, second transparent resin layer 202b, third transparent resin layer 202c, fourth transparent resin layer As the resin material for forming the clear resin layer 202d, transparent polyimide resin, transparent polyethylene Phthalate resins, transparent para-polyamide resins, etc. are used. Transparent polyimide resin, transparent Polyethylene naphthalate resin has inferior gas barrier properties compared to glass substrates, therefore A gas barrier film formed of a silicon nitride film or the like may be provided. On the other hand, transparent para Polyamide resins have transparency, heat resistance, and gas barrier properties, so transparent resin substrate 200 It can be suitably used as a material for forming the first transparent resin layer 202a and the second transparent resin layer. The resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d are made of the same resin material. It may be formed of, or some or all of the layers may be formed of different resin materials. Good. For example, the fourth transparent resin layer 202d is a transparent parabolic resin with high rigidity and high gas barrier properties. By using riamid resin, the long-term reliability of the EL element 142 can be improved.

[0096] The transparent resin substrate 200 preferably has heat resistance of 150°C to 400°C. The maximum process temperature when forming the dynamic transistor 136 and the selection transistor 138 ( If the heating temperature is 250°C or lower, use para-polyamide resin as the resin material. This can be achieved. By using para-polyamide resin, the transparent resin substrate 200 itself can have a gas barrier. It can be given properties. On the other hand, the drive transistor 136 and the selection transistor 138 When forming the material, if the maximum process temperature (heating temperature) is 250°C or higher, the heat resistance From this perspective, it is preferable to use transparent polyimide resin as the material for forming the transparent resin substrate 200. It seems so.

[0097] Furthermore, nanocellulose fiber is applied to transparent polyimide resin and transparent para-polyamide resin. Even if it is mixed with transparent polyimide resin or transparent para-polyamide resin, i. Transparent polyimide resin and transparent para-cellulose resin mixed with nanocellulose fibers (CNF) Polyamide resin offers the advantages of improved rigidity, reduced shrinkage, and enhanced dimensional stability. It has. In order to improve the heat resistance of the transparent resin substrate 200, the first transparent resin layer 202a, The second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d Nanocellulose fibers (CNF) may be mixed into at least one layer of the material. Nanocellulose fibers (CN) for light polyimide resins and transparent para-polyamide resins The mixing ratio of F) is preferably 1% to 10% by weight.

[0098] The drive transistor 136 shown in Figure 16A has a first gate electrode 150 and a first insulating layer 210 A first oxide semiconductor layer 180a, a second insulating layer 212, and a second gate electrode 151 are stacked. It has a structure. The first gate electrode 150 is connected to the first oxide semiconductor layer 1 via the first insulating layer 210. The second gate electrode 151 is positioned to overlap with 80a, and the second gate electrode 151 is connected to the first insulating layer 212 via the second insulating layer 212. It is positioned so as to overlap with the oxide semiconductor layer 180a. First gate electrode 150, second gate The electrode 151 and the first oxide semiconductor layer 180a have regions that overlap each other, and the drive traction A channel is formed in the superimposed region of transistor 136. 36 is when the first gate electrode 150 is subjected to the same potential as the shield electrode 116, and the second gate A voltage based on the data signal (a voltage based on the video signal) is applied to electrode 151.

[0099] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are connected to the first insulating layer 21 It is placed between 0 and the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and The second metal oxide conductive layer 176b, in a plan view, is the first gate electrode 150 and the second gate The electrode 151 is positioned to be sandwiched from both sides. First metal oxide conductive layer 176a and second gold The oxide conductive layer 176b is provided so as to be in contact with the lower surface of the first oxide semiconductor layer 180a. The drive transistor 136 has a second metal oxide conductive layer 176b and a first oxide semiconductor layer 1 The region in contact with 80a becomes the drain region, and the first metal oxide conductive layer 176a is the first oxide The region in contact with the semiconductor layer 180a becomes the source region.

[0100] The first oxide semiconductor layer 180a is formed using a metal oxide semiconductor material. As semiconductor materials, quaternary metal oxide materials, ternary metal oxide materials, binary metal oxides Materials and monocrystalline metal oxide semiconductor materials are used. These metal oxide semiconductor materials are It may have a single-layer structure or a multilayer structure. Also, metal oxide semiconductor material It may be amorphous or crystalline.

[0101] As a quaternary oxide material, In2O3-Ga2O3-SnO2-ZnO-based oxide material, As ternary oxide materials, In2O3-Ga2O3-SnO2 oxide materials, In2O3- Ga2O3-ZnO-based oxide materials, In2O3-SnO2-ZnO-based oxide materials, In2 O3-Al2O3-ZnO-based oxide materials, Ga2O3-SnO2-ZnO-based oxide materials, Ga2O3-Al2O3-ZnO-based oxide materials, SnO2-Al2O3-ZnO-based oxides Materials, binary oxide materials include In2O3-ZnO-based oxide materials and SnO2-ZnO-based acid Doxide materials, Al2O3-ZnO based oxide materials, MgO-ZnO based oxide materials, SnO2- As MgO-based oxide materials, In2O3-MgO-based oxide materials, and monocrystalline oxide materials, In Using 2O3-based metal oxide materials, SnO2-based metal oxide materials, ZnO-based metal oxide materials, etc. It is possible to add silicon (Si), nickel (Ni), and tan to the above oxide semiconductor. It contains gusten (W), hafnium (Hf), titanium (Ti), and tantalum (Ta). It is also possible. For example, the In-Ga-Zn-O based oxide material shown above is at least It is an oxide material containing In, Ga, and Zn, and there are no particular restrictions on the composition ratio. Quaternary oxide materials, ternary oxide materials, binary oxide materials, and monochromatic oxide materials are included. The oxides are not limited to those with a stoichiometric composition, but also include those with compositions that deviate from the stoichiometric composition. It may be composed of oxide materials. Such metal oxide semiconductor materials have a voltage of 3.0 eV It has the above band gap and is transparent to light in the visible light band.

[0102] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are conductive. It is made using metal oxide materials, metal nitride materials, or metal oxynitride materials. It is electrically conductive. Examples of metal oxide materials include indium tin oxide (ITO) and zinc oxide (Zn O), indium zinc oxide (IZO), tin oxide (SnO2), niobium added oxide Titanium (TiNbO x ) and others are used. Also, titanium nitride (TiN x ), titanium oxynitride (TiON) and other transparent and conductive metal nitrides and metal oxynitrides can also be used. can.

[0103] The source electrode (first metal oxide conductive layer 176a) of the drive transistor 136 is the common electrode. It is connected to 144a. The first metal oxide conductive layer 176a is connected to the fifth contact hole 166. It is provided so as to be in contact with the common electrode 144a via the first metal oxide conductive layer 176a. A source wiring 170 made of a metal film is provided on top. The source wiring 170 is the fifth connector. It is provided as an extension to the area of ​​the tact hole 166. The fifth contact hole 166 is the first It is formed to penetrate the insulating layer 210 and the fourth transparent resin layer 202d. Source wiring 170 The common electrode 144a and common wiring 144b are made of titanium (Ti) and aluminum (Al). It is formed from metallic materials such as ), molybdenum (Mo), and copper (Cu).

[0104] The first insulating layer 210 is, for example, from the side of the fourth transparent resin layer 202d, the first silicon nitride film It has a structure in which 214a and the first silicon oxide film 215a are laminated. The second insulating layer 212 is For example, from the side of the first oxide semiconductor layer 180a, the second silicon oxide film 215b, the second silicon It has a structure in which silicon oxide films 214b are stacked. The first oxide semiconductor layer 180a is the first It is provided in contact with the silicon oxide film 215a and the second silicon oxide film 215b. The semiconductor layer 180a is provided with its upper and lower surfaces in contact with the silicon oxide film, thereby allowing oxygen to escape. The generation of defects is suppressed.

[0105] The first gate electrode 150 and the second gate electrode 151 are made of aluminum (Al) and molybdenum. Metal materials such as tungsten (Mo), zirconium (Zr), and copper (Cu) are used. It is manufactured using aluminum alloys. Aluminum-neodymium alloy (AlNd) is one example of an aluminum alloy. Aluminum neodymium-nickel alloy (AlNdNi), aluminum carbon Nickel alloys (AlCNi), copper-nickel alloys (CuNi), etc., can be used. For example, the first gate electrode 150 and the second gate electrode 151 are made of aluminum (Al), Films of ribdenum-tungsten (MoW) alloy, molybdenum-titanium (MoTi) alloy, etc. It is formed.

[0106] The selection transistor 138 consists of a first gate electrode 152, a first insulating layer 210, and a second oxide semiconductor. It has a structure in which a conductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are laminated together. The selected transistor 138 has a second oxide semiconductor layer 180b, and the first gate electrode 152 and A channel is formed in the region that overlaps with the second gate electrode 153. The first gate electrode 152 is It is provided in contact with the shield electrode 116.

[0107] The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are connected to the first insulating layer 210 It is provided between the second oxide semiconductor layer 180b and the third metal oxide conductive layer 176c and The fourth metal oxide conductive layer 176d is provided in contact with the lower surface of the second oxide semiconductor layer 180b. By doing so, it functions as a source region and a drain region. The third metal oxide conductive layer 176c and The fourth metal oxide conductive layer 176d is, in a plan view, the first gate electrode 152 and the second gate electrode. The electrodes 153 are positioned to sandwich the device from both sides.

[0108] The third metal oxide conductive layer 176c is provided in contact with the lower surface of the data signal line 108. The signal line 108 makes direct contact with the third metal oxide conductive layer 176c, thereby creating a contact hole. Compared to connections made via a wire, the contact area is increased and contact resistance is reduced.

[0109] A drain wire 173 is provided in contact with the upper surface of the fourth metal oxide conductive layer 176d. The oxide semiconductor layer 180b is located above the fourth metal oxide conductive layer 176d and the drain wiring 173. It is provided so as to cover the surface. The drain wiring 173 is the second gate of the drive transistor 136. It is connected via electrode 151 and the seventh contact hole 168.

[0110] The capacitive element 140 shown in Figure 16B includes drain wiring 173 and a fourth metal oxide conductive layer 176. In the region where the first insulating layer 210, the fourth transparent resin layer 202d, and the common wiring 144b overlap d The capacitive element 140 is formed by a fourth metal oxide conductive layer 176d and drain wiring 173 One capacitive electrode is formed by the common wiring 144b, and the other capacitive electrode is formed by the common wiring 144b. Capacitive element 140 is provided between the drain electrode of the selection transistor 138 and the common wiring 144b. It can be done.

[0111] The drive transistor 136 and the selection transistor 138 are covered with a third insulating layer 216. The third insulating layer 216 is made of acrylic resin, polyimide resin, epoxy resin, and polysiloxane. It is formed from organic resin materials such as resin and polyamide resin. The third insulating layer 216 is made of these resins The drive transistor 136 and the selection transistor 138 are formed by the lipid composition. It functions as an embedded planarization film. The third insulating layer 216 is a silicon oxide film, nitride film. It may also be formed with an inorganic insulating film such as a reconstituted film.

[0112] As shown in Figure 16A, the EL element 142 corresponds to the cathode from the side of the transparent resin substrate 200. First electrode 220, electron transport layer 222 (first electron transport layer 222a, second electron transport layer 22 2b) Electron injection layer 224, light-emitting layer 226, hole transport layer 228, hole injection layer 230, anode The EL element has a structure in which a second electrode 232 corresponding to the anode is stacked. A sequential stacking structure is one in which layers such as a hole transport layer, light-emitting layer, electron transport layer, and cathode are stacked from the anode side. When the stacking order is reversed, it is sometimes called an inverted stacking structure. (See Figure 16A) EL element 142 is classified as having an inverted stacking structure.

[0113] The first electrode 220 is continuous with the first metal oxide conductive layer 176a and the first electron transport layer 222a It has a structure that is continuous with the first oxide semiconductor layer 180a. This allows the drive transistor 136 and the EL element 142 to be connected without using contact holes. A state is formed. The first electrode 220, which corresponds to the cathode, is the first metal oxide conductive layer 17 It is formed from the same metal oxide conductive material as 6a. In addition, the first electron transport layer 222a is formed from the first acid It is formed from the same oxide semiconductor material as the oxide semiconductor layer 180a.

[0114] In the region where the EL element 142 is formed, the third insulating layer 216 and the second insulating layer 212 are provided with the third An opening 234 is provided. The third opening 234 is positioned on the upper side of the first electrode 220. The upper surface of the first electron transport layer 222a is exposed. On top of the first electron transport layer 222a, 2 electron transport layer 222b, electron injection layer 224, light emission layer 226, hole transport layer 228, hole injection Layer 230 and the second electrode 232 as an anode are stacked. These stacks and the first electrode 22 The region where 0 overlaps with the region becomes the light-emitting region of the EL element 142.

[0115] The upper layer of the first electrode 220 is formed in the same layer as the first oxide semiconductor layer 180a. A first electron transport layer 222a is provided. The first electron transport layer 222a has a band gap of 3.0e It is preferable that the V is greater than or equal to and that it is transparent to visible light. The second electron transport layer 222b is Indium oxide, zinc oxide, gallium (Ga) oxide, tin (Sn) oxide, magnesium oxide Magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum Metals containing one or more elements selected from nitrate (Ta) oxide and niobium (Nb) oxide. It is formed from oxide materials. These metal oxide materials have a band gap of 3.0 eV or more. It is transparent to visible light. The second electron transport layer 222b is 50 nm to 1000 It is formed with a film thickness of nm. In the EL element 142, the second electron transport layer 222b has a film thickness in this range. This prevents short circuits between the first electrode 220 and the second electrode 232.

[0116] The carrier concentration in the second electron transport layer 222b is equal to the carrier concentration in the first electron transport layer 222a. It is preferably 1 / 10 or less, more preferably 1 / 100 or less. Specifically, the second The carrier concentration of the electron transport layer 222b is 10 13 / cm 3 ~10 17 / cm 3 whereas the carrier concentration of the first electron transport layer 222a is 10 15 / cm 3 ~10 19 / cm 3 within the range of and the difference in carrier concentration between the two is preferably at least one digit, more preferably at least two digits, as described above. The first electron transport layer 222a has a carrier concentration of 10 / cm 15 ~10 3 / cm 19 / cm 3 within this range, which can reduce the resistance loss in the connection between the driving transistor 136 and the EL element 142 and suppress the increase in the driving voltage. When the carrier concentration of the second electron transport layer 222 b is 10 / cm 20 / cm 3 or more, the excited state in the light-emitting layer 226 is deactivated and the light-emitting efficiency decreases. On the other hand, when the carrier concentration of the second electron transport layer 222b is less than 10 13 / cm 3 the carriers supplied to the light-emitting layer 226 are reduced and sufficient luminance cannot be obtained. Thus, by providing the first electron transport layer 222a in contact with the second electron transport layer 222b and making the carrier concentrations of both different, an increase in the driving voltage can be prevented and the light-emitting efficiency of the EL element 142 can be increased.

[0117] The carrier concentrations of the first electron transport layer 222a and the second electron transport layer 222b can be controlled by the oxygen deficiency concentration of the oxide semiconductor. The oxygen deficiency of the oxide semiconductor acts as a donor ​It works. Increasing the oxygen vacancy density of an oxide semiconductor increases the carrier concentration, and oxygen vacancies Lowering the density lowers the carrier concentration. Oxygen vacancies in oxide semiconductors are, for example, hydrogen It can be increased by applying [a certain agent], and decreased by supplying oxygen. It is possible.

[0118] In an EL device, the electron injection layer provides the energy to inject electrons from the cathode to the electron transport layer. It is used to reduce the barrier. The electron injection layer 224 is emitted from the second electron transport layer 222b. It is provided to facilitate electron injection into the optical layer 226. The electron injection layer 224 is the second electron It is provided between the child transport layer 222b and the light-emitting layer 226.

[0119] The electron injection layer 224 uses a material with a small work function. For example, the electron injection layer 224 is made of a material with a small work function. C12A7(12CaO·7Al2O3) electride, Mg 0.3 Zn 0.7 O, Zn 0.7 Si 0.3 O x It is formed from an oxide semiconductor material containing . It is formed with a thickness of nm to 100 nm. By using such an electron injection layer 224, the second The amount of electrons injected from the electron transport layer 222b to the light-emitting layer 226 can be increased, and the light emission effect The rate can be increased.

[0120] The light-emitting layer 226 can be made of various light-emitting materials. For example, the light-emitting layer 226 can be made of fluorescent Materials, phosphorescent materials that emit phosphorescence, thermally activated delayed fluorescence (TADF) It is formed using a laid Fluorescence material. The light-emitting layer 226 is included in the pixel 104. Materials with different emission colors are used for multiple sub-pixels 105. The light-emitting layer 226 emits white light. To create the light layer, a structure in which a blue light-emitting layer and a yellow light-emitting layer are stacked is used. Light-emitting layer 22 6 is produced by methods such as vapor deposition, transfer printing, spin coating, spray coating, and gravure printing. It can be manufactured. The film thickness of the light-emitting layer 226 can be selected as appropriate, for example, 10 nm. It is provided in the range of ~100 nm.

[0121] The hole transport layer 228 is, for example, an arylamine compound, or an amine containing a carbazole group. It is formed from compounds and amine compounds including fluorene derivatives. Hole transport layer 228 These are fabricated by methods such as vacuum deposition and coating. The hole transport layer 228 has a range of 10 nm to 500 nm. It is formed with a film thickness of nm. If a hole injection layer 230 is formed, the hole transport layer 228 is omitted. It may also be used.

[0122] The hole injection layer 230 is made of molybdenum oxide, vanadium oxide, ruthenium oxide, and tan. It is formed using metal oxides such as gusten oxide and manganese oxide. Also, the hole injection layer. 230 is phthalocyanine (H2Pc) and copper(II) phthalocyanine (abbreviation: CuPc). Materials such as hexaazatriphenylenehexacarbonnitrile (HAT-(CN)6) It is formed using the following method. The hole injection layer 230 is formed with a thickness of 1 nm to 100 nm.

[0123] The second electrode 232, which corresponds to the anode, is formed from a material with a work function of 4.0 eV or higher. The second electrode 232 is, for example, indium tin oxide (ITO), indium Zinc (IZO), tungsten oxide (WO x ) and zinc oxide (ZnO) It is formed using conductive metal oxides such as indium (IWZO). The EL element 142 is Since it is a Tom emission type, it is preferable that the second electrode 232 has a light-reflecting surface. The aforementioned conductive metal oxides are translucent, so aluminum (Al), silver (Ag) It is preferable to form a light-reflecting surface by laminating metal films such as )

[0124] Although not shown in Figures 16A and 16B, oxygen and moisture penetrate onto the EL element 142. A passivation membrane that blocks the signal may be provided.

[0125] Thus, the sub-pixel 105 in this embodiment uses an n-channel type drive transistor 13 It has a structure in which 6 and the EL element 142 are connected. The EL element 142 is bottom emission It is of the n-type and has a structure that emits light on the side of the shield electrode 116. The EL element 142 is an electric Since the electron transport layer and electron injection layer are formed from inorganic metal oxide semiconductor material, moisture (H2O) It has a structure that suppresses the degradation of luminescence properties due to oxygen (O2).

[0126] Figure 17 shows a planar layout diagram illustrating another configuration of subpixel 105. Sub-pixel 105 is connected to the second gate electrode 153 of the selection transistor 138 and the scan signal line 106a The structure is formed from the same conductive layer. The second auxiliary electrode 2 is located on top of the second sensor electrode 114. 07 is provided (Figure 17 omits the pattern of the second sensor electrode 114 and shows the second auxiliary electrode) (Only 207 is shown). The first light-shielding layer 208a and the second light-shielding layer 208b are second auxiliary It is formed from the same metal film as electrode 207 and is placed on top of the second sensor electrode 114.

[0127] Figure 18 shows the planar layout of the subpixel 105, and is a relative to the subpixel 105 shown in Figure 15. The connection structure between the dynamic transistor 136 and the common electrode 144a is shown in a different form. Figure 19A shows the cross-sectional structure corresponding to the line D5-D6 shown in Figure 18, and Figure 19B shows the cross-sectional structure corresponding to D7-D8 The cross-sectional structure corresponding to the line is shown.

[0128] As shown in Figures 18 and 19A, the source wiring 170 of the drive transistor 136 is The common electrode 144 is connected by a connecting wire 172 formed of the same conductive layer as the gate electrode 151. It is connected to a. The connecting wire 172 is connected to the eighth contact hole formed in the second insulating layer 212. The source wiring 170 is connected by the 171, and the second insulating layer 212, the first insulating layer 210, and The common electrode 1 is connected by the fifth contact hole 166 formed in the fourth transparent resin layer 202d. It is connected to 44a. With this connection structure, the first subpixel shown in the equivalent circuit of Figure 4 is also formed. It is possible to realize 105r, the second sub-pixel 105g, and the third sub-pixel 105b, respectively. Cut.

[0129] Figure 20 shows the planar layout of subpixel 105, and for subpixel 105 shown in Figure 18, The diagram also shows a different configuration of the connection structure between the selector transistor 138 and the data signal line 108. 21A shows the cross-sectional structure corresponding to the line D9-D10 shown in Figure 20, and Figure 21B shows D11- This shows the cross-sectional structure corresponding to line D12.

[0130] As shown in Figures 20 and 21B, the source electrode 174 of the selection transistor 138 is second It is connected to the data signal line 108, which is formed of the same conductive layer as the gate electrode 153. Line 108 is located on the second insulating layer 212 and through the ninth contact hole 175. It is connected to the source electrode 174. The scanning signal line 106a is located below the first insulating layer 210. It is provided there. Therefore, even if the second insulating layer 212 is formed thinly, the second ge The data signal line 108, which is provided in the same layer as the electrode 153, intersects with the scan signal line 106a. By arranging it in this way, short circuits at intersections can be prevented.

[0131] 1-6. Sealing structure Figure 22A shows an example of the connection structure between the first sensor electrode 112 and the lead wiring 147. The lead wire 147 is a wire that connects the first sensor electrode 112 and the second connection terminal 146b. The first sensor electrode 112 is connected to the lead wire 147 in the outer region of the display unit 102. The lead wire 147 is connected to the fourth transparent resin layer 202d, as is the second connection terminal 146b. It is provided on top of the second connection terminal 14. Similar to the structure shown in Figure 5, the shield electrode 116 is located on the second connection terminal 14 It extends down to below 6b. The second connection terminal 146b is located above the shield electrode 116. By providing this, it can withstand the crimping process when connecting the flexible circuit board 126. This allows for the prevention of indentation, deformation, and peeling of the second connection terminal 146b.

[0132] The shield electrode 116 has a first opening 158. A first contact hole 159 having a hole diameter smaller than the diameter is provided. Hole 159 is the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin It penetrates layer 202b, exposing the upper surface of the first sensor electrode 112. Lead wire 14 7 extends from the second connection terminal 146b to the first contact hole 159 and connects to the first sensor It is connected to pole 112.

[0133] On the fourth transparent resin layer 202d, the first insulating layer 210, the second insulating layer 212, and the third insulating layer A layer 216 is provided. A second electrode 232 is provided on the third insulating layer 216. Figure 22 is This shows the state in which a sealing layer 236 is provided on the upper side of the second electrode 232. Structure of the sealing layer 236 There are various types, for example, silicon carbon nitride film 237a, silicon nitride film 238, silico It has a structure in which carbon nitride films 237b are stacked.

[0134] The lead wire 147 extends outward from the area covered by the third insulating layer 216 and the sealing layer 236 (transparent It extends to the end side of the light resin substrate 200 and connects to the second connection terminal 146b. Wiring 147 and the second connection terminal 146b are formed from the same conductive layer, forming a single continuous pattern. It is formed by.

[0135] Figure 22A shows an embodiment in which the transparent resin substrate 200 has a divided region 240 in the region near the edge. The transparent resin substrate 200 is placed on a support substrate (not shown) during the manufacturing process, and each When the panel is divided into individual pieces, it is divided by a division region 240. The division region 240 contains the display panel A series of opening grooves are formed surrounding the flannel. The opening grooves are shaped, for example, by laser processing. The transparent resin substrate 200 is subjected to laser ablation after forming a divided region 240. It is detached from the support substrate by the process.

[0136] Figure 22B shows that the shield electrode 116 extends to the region of the second connection terminal 146b, as shown in Figure 7. This shows a structure that does not extend. In this structure, the lead wire 147 and the second connection terminal 146b It is preferable that a first insulating layer 210 is provided on the lower side. The lead wire 147 is first Insulating layer 210, fourth transparent resin layer 202d, third transparent resin layer 202c, and second transparent resin layer The first sensor electrode 112 is connected by a first contact hole 159 that penetrates 202b. ru.

[0137] Even if a shield electrode 116 is not provided below the second connection terminal 146b, the first insulation The provision of layer 210 makes the crimping process when connecting the flexible circuit board 126 easier. It can withstand the load and prevent the second connection terminal 146b from collapsing, deforming, and peeling. Although not shown in the diagram, the first insulating layer 210 and the sheathing are located on the lower side of the second connection terminal 146b. The same effect can be obtained even if both of the rud electrodes 116 are provided. Also, see Figure 22. Although not shown in A and Figure 22B, the structure of the first connection terminal 146a in the terminal section is also the second connection It is similar to terminal 146b, and the same effect can be obtained.

[0138] Figures 23A and 23B show a configuration of the second insulating layer 212 that differs from that of Figures 22A and 22B. The following illustrates the differences between Figures 23A and 23B and Figures 22A and 22B. The explanation will focus on the minutes.

[0139] Figure 23A shows a structure in which a shield electrode 116 is provided below the second connection terminal 146b. Furthermore, it has a structure in which a second insulating layer 212 is provided on the lead wiring 147. Layer 212 covers the top and sides of the lead wire 147, and although not shown, the lead wire 1 In areas where 47 is not provided, it is provided in contact with the fourth transparent resin layer 202d. Second insulating layer 2 12 is provided extending to the outside of the third insulating layer 216 (towards the second connection terminal 146b). The second insulating layer 212 has a region that is outside the third insulating layer 216 and in contact with the sealing layer 236.

[0140] The second insulating layer 212 and the sealing layer 236 include an insulating film formed of an inorganic insulating material. The second insulating layer 212 and the sealing layer 236 are provided in contact with each other on the outside of the third insulating layer 216. This improves sealing performance. As shown in Figure 16A, the EL element 142 is shaped The layer that makes up the third insulating layer 216 is provided in contact with the third insulating layer 216. Third insulating layer 2 in contact with EL element 142 16 is sandwiched between the second insulating layer 212 and the sealing layer 236, and the end of the third insulating layer 216 , provided inward from the outer ends of the second insulating layer 212 and the sealing layer 236, the EL element 1 The performance in preventing the degradation of 42 can be improved. Furthermore, the second insulating layer 212 draws out Since it functions as a protective film for the wiring 147, it prevents deterioration and damage to the wiring. Yes, it is possible. The other structures are the same as in Figure 22A, and similar effects can be obtained.

[0141] Figure 23B shows a structure in which the first insulating layer 210 is provided below the second connection terminal 146b. Furthermore, it has a structure in which a second insulating layer 212 is provided on top of the lead wiring 147. The sealing performance can be improved in the same way as the structure shown in Figure 23A. Other structures are the same as those shown in Figure 22B. It is the same, and similar effects can be obtained. Although not shown in Figure 23B, the 2. Both the first insulating layer 210 and the shield electrode 116 are provided on the lower side of the connection terminal 146b. The same effect can be obtained even if it is not used.

[0142] Figures 24A and 24B show the configuration of the first insulating layer 210 and the second insulating layer 212 as shown in Figures 23A and 24B. Figures 23A and 24B show a different configuration. For explanations of Figures 24A and 24B, see Figures 23A and 24B. This explanation will focus on the differences between Figure 23B and this figure.

[0143] Figures 24A and 24B show that a shield electrode 116 is provided below the second connection terminal 146b. It has a structure and a first insulating layer 21 below the lead wiring 147 and the second connection terminal 146b. It has a structure in which a first insulating layer 210 and a second insulating layer 212 are provided. Since 12 is provided on the entire lower surface of the second connection terminal 146b, the flexible circuit board 12 It can withstand the crimping process when connecting 6, and the second connecting terminal 146b does not sink or deform. Furthermore, it can improve resistance to peeling.

[0144] Furthermore, in the region outside the third insulating layer 216, the sealing layer 236 is in contact with the lead wiring 147, and Since it also has a region (not shown) that is in contact with the second insulating layer 212, the sealing performance can be improved. This prevents the deterioration of the EL element 142.

[0145] Figures 25A and 25B show that the configuration of the lead wiring 147 differs from that in Figures 22A and 22B. The configuration is shown. The difference between Figure 25A and Figure 25B is the shield electrode 1 below the second connection terminal 146b. The difference lies in the presence or absence of 16. For explanations of Figures 25A and 25B, please refer to Figures 22A and 22B. I will explain the differences in detail.

[0146] As shown in Figures 25A and 25B, the first sensor electrode 112 and the second connection terminal 146b The connection structure is a structure connected by multiple contact holes and multiple lead wires. It has. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, The first lead wire 147a is connected to the first sensor electrode 112, and the third transparent resin layer 202c A contact hole 169b is formed there, and the second lead wire 147b is connected to the first lead wire It is connected to 147a, and a contact hole 169c is formed in the fourth transparent resin layer 202d. The third lead wire 147c has a structure in which it is connected to the second lead wire 147b.

[0147] A contactor is provided to connect the first lead wire 147a to the first sensor electrode 112. Connect the duct hole 169a and the second lead wire 147b to the first lead wire 147a. The position of the contact hole 169b for this purpose is different. Also, the second lead wire 14 The position of the contact hole 169b for connecting 7b to the first lead wiring 147a, Contact hose for connecting the third lead wire 147c to the second lead wire 147b The position of Ru169c is different. In this way, the positions of multiple contact holes are shifted. By providing this, the depth of each contact hole can be made shallower, and the drawer The wiring connections can be reliably formed.

[0148] The configuration shown in Figures 25A and 25B is the same as in Figures 23A and 23B, 24A and 24B. It can be applied to the configuration shown.

[0149] 1-7. Flexible circuit boards and integrated circuits Figure 26 shows a transparent resin substrate on which a display unit 102 and a touch and fingerprint sensor unit 110 are provided. The configuration of 200 and the configuration of the flexible circuit board 126 on which the second drive circuit 128 is provided are show.

[0150] The flexible circuit board 126 has a third connection terminal 148 provided on the film substrate 127. a, fourth connection terminal 148b, fifth connection terminal 148c, sixth connection terminal 149, and wiring group 1 Includes 29a and 129b. Wiring group 129 is connected to the third connection terminal 148a to the fifth connection terminal 148. Between c and the second drive circuit 128, and between the second drive circuit 128 and the sixth connection terminal 149 Connect. The third connection terminal 148a connects to the first connection terminal 146a on the transparent resin substrate 200 side. The fourth connection terminal 148b is connected to the second connection terminal 146b on the transparent resin substrate 200 side. The fifth connection terminal 148c is connected to the first drive circuit 118 on the transparent resin substrate 200 side. It is connected to the connection terminal. The sixth connection terminal 149 is a display device with touch and fingerprint sensor 1 It is connected to an external circuit that drives 00.

[0151] The second drive circuit 128, as shown in Figure 5, consists of the first scan signal line drive circuit block and data A composite unit integrating a signal line drive circuit block and touch and fingerprint sensor detection circuit blocks. It is an integrated circuit. The second drive circuit 128 is connected to the film substrate 127 by COF (Chip on Film). It will be mounted on the surface.

[0152] Figure 27 shows a plan view of the flexible circuit board 126. Flexible circuit board 126 A third connecting terminal 148a is provided on the first side of a film substrate 127 made of polyimide or the like. A fourth connection terminal 148b and a fifth connection terminal 148c are provided, and the second side opposite to the first side A sixth connection terminal 149 is provided on the side. The second drive circuit 128 is located inside the film substrate 127 It will be implemented in the central region. Figure 27 shows the region where the second drive circuit 128 will be implemented with a dotted line. .

[0153] Third connection terminal 148a, fourth connection terminal 148b, and fifth connection terminal 148c and second drive A wiring group 129a is provided in the region between the circuit 128 and the sixth contact. A group of wires 129b is provided in the region between the terminal 149 and the other terminal. The wiring extends from the sixth connection terminal 149 to the area where the pad 135 of the second drive circuit 128 is located. It is being pulled in. Each wire of the wiring group 129a is connected to pad 1 of the second drive circuit 128. From the region where 35 is located, the third connection terminal 148a, the fourth connection terminal 148b, and the fifth connection terminal Child 148c has been drawn out.

[0154] The pad 135 of the second drive circuit 128 is provided in correspondence with the functional block. The pad 135 of the second drive circuit 128 is the scan signal line drive circuit block 130, data signal Corresponding to the line drive circuit block 132 and the touch and fingerprint sensor detection circuit block 134 They are placed in the respective areas of the circuit block. The connection between the wiring and pad 135 is made by a conductive material. Also, the third connection terminal 148 a, the fourth connection terminal 148b, and the fifth connection terminal 148c, and the connection to the transparent resin substrate 200. The connection to the terminals is also made using conductive material.

[0155] Figure 28 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in Figure 7, and terminals A flexible circuit board 126 is placed on top of section 122, and connection terminals are connected with conductive material. The state is shown. The flexible circuit board 126 is provided on the terminal portion 122 of the transparent resin substrate 200. Corresponding to the first connection terminal 146a and the second connection terminal 146b, the third connection terminal 148 a and the fourth connection terminal 148b are provided. As explained with reference to Figure 5, the first connection terminal The sub-terminal 146a is connected to the switching circuit 120, and the second connection terminal 146b is connected to the shield electrode 116. The first contact hole 159 is provided in the inner region of the first opening 158. It is connected to the sensor electrode 112.

[0156] First connection terminal 146a and third connection terminal 148a, and second connection terminal 146b and fourth connection Terminal 148b is positioned opposite to terminal 146a, spaced apart. At least one conductive particle 242 is provided between 148a and 148a. The conductive particle 242 is deformed by pressure between the first connection terminal 146a and the third connection terminal 148a. It is held in this state. At least one conductive particle 242 is connected to the first connection terminal 146a and It is in contact with the third connection terminal 148a. The first connection terminal 146a and the third connection terminal 148a are , electrically connected by at least one conductive particle 242. Second connection terminal 146b Conductive particles are similarly provided between and the fourth connection terminal 148b. Preferably, each conductive particle 242 consists of multiple conductive particles.

[0157] The conductive particles 242 are dispersed in the resin 244 and are located at the first connection terminal 146a (or It is placed on top of the third connection terminal 148a). In this state, the first connection terminal 146a and the third connection The terminal 148a is placed opposite the conductive particle 242, and the distance between them is narrowed to the extent that the conductive particle 242 is deformed by pressure. When this happens, the conductive particles 242 protrude from the resin 244 and connect to the first connection terminal 146a and the third connection terminal It can be made to make direct contact with terminal 148a.

[0158] Preferably, the resin 244 contains multiple conductive particles 242. For example, It is preferable that 2 to 7 conductive particles 242 are contained within a single region of resin 244. i. As a result, multiple conductive particles are placed between the first connection terminal 146a and the third connection terminal 148a. The presence of component 242 ensures a reliable electrical connection.

[0159] As shown in Figure 28, the resin 244 containing multiple conductive particles 242 is located at the first connection terminal 14 They are arranged so as to be distributed at multiple locations between 6a and the third connection terminal 148a. In other words, Between the first connection terminal 146a and the third connection terminal 148a, conductive particles 242 are present. They are arranged in a controlled manner in terms of number and position. In this way, the first connection terminal 146a and the third connection terminal The number and position of conductive particles 242 are controlled and arranged in the region between the terminal 148a and the conductive particles 242. This ensures a reliable electrical connection and prevents short circuits between adjacent terminals. This can prevent this from happening. Such a configuration is suitable when the pitch of the connection terminals is narrow. It works effectively in combination.

[0160] The diameter of the conductive particles 242 is preferably within the range of 2 μm to 10 μm. If the size is such that the pitch of the connection terminals becomes 30 μm or less, the adjacent connection terminals This prevents short circuits between them. Also, as shown in Figure 28, it includes conductive particles 242. If the resin 244 is arranged to be dispersed at multiple locations between the connection terminals, then between those dispersions The spacing is preferably 5 μm or more. With this arrangement, conductive particles 242 The resin 244 containing the resin does not protrude from the first connection terminal 146a and the third connection terminal 148a. This allows the spacing between the first connection terminal 146a and the third connection terminal 148a to remain constant. It can be done.

[0161] There are no limitations on the structure, shape, or material of the conductive particles 242, but for example, a highly rigid resin material could be used. Particle nuclei coated with a rubbery, elastic resin, or particle nuclei made of a highly rigid inorganic material coated with a rubbery, inorganic elastic material. These were metal-coated particles coated with metals such as nickel (Ni), copper (Cu), and gold (Au). Furthermore, the shape of the conductive particles 242 is not limited to spherical, but may also be elongated spherical or konpeito-shaped. That's fine.

[0162] Resin 244 is a curable resin material. The curable resin material includes a radical polymerization type resin. Hmm. Radical polymerization resin materials include (meth)acrylic monomer or (meth)acrylic. It is preferable that the oligomer is a rate oligomer, and more preferably that it is linked in an ester form. The (meth)acrylic oligomer has at least one (meth)acryloyl group. For example, epoxy acrylate, urethane acrylate, polyester acrylate Polybutadiene acrylate, polyol acrylate, polyether acrylate Silicone resin acrylate, melamine acrylate, etc. can be used. It can be either functional or polyfunctional, but it is preferable to include polyfunctional monomers or oligomers. It is preferable. The curable resin material is (meth)acrylate monomer and (meth)acrylate You may select and construct two or more types of oligomers.

[0163] Although not shown in the figures, a second resin may be provided around the resin 244. The second resin is A curable resin material is used. As the curable resin material, fluorene-based acrylate is used. It can contain allyl ether groups, vinyl ether groups, acrylate groups and meta An ene compound or above having two or more functional groups selected from the group consisting of acrylate groups in its molecule A mixture of two or more ene compounds, and two or more thio compounds in one molecule. An ene / thiol-based curable resin containing a thiol compound having a thiol group is treated with an oxidizing compound. You may use what you have obtained by doing so.

[0164] Resin 244 and the second resin further contain a photocuring initiation component. The photocuring initiation component is a photoradio A CAL initiator that generates radicals when irradiated with ultraviolet or visible light. Any compound will do. Examples of UV radical initiators include acetophenone-based initiators. , benzoin ether initiators, benzophenone initiators, α-diketone initiators, and Thioxanthone-based initiators can be used.

[0165] The resin 244 containing conductive particles 242 is printed by the printing method to the first connection terminal 146a (or third It can be installed above the connection terminal 148a). Offset printing is used as the printing method. It can be. Since the resin 244, which is equivalent to ink, contains conductive particles 242, offset Among printing methods, it is preferable to use the pad printing method, which uses intaglio printing plates.

[0166] The resin 244 containing conductive particles 242 is printed onto the first connection terminal 146a (or the third connection terminal) The flexible circuit board 126 is connected to the transparent resin substrate 200 by placing it in position 148a). Therefore, even if the connection terminals become smaller and the pitch becomes narrower, accurate connections can be made. The touch and fingerprint sensor-equipped display device 100 has a touch and fingerprint sensor section 110 Because the first sensor electrode 112 is miniaturized, the connection terminal for extracting the sensor signal The number increases. As shown in Figure 26, the terminal section 122 is used to display the image on the display section 102. The connection terminal for inputting the signal for this purpose and the connection terminal for the touch and fingerprint sensor unit 110 are the same. Even when the pitch is narrowed by including it in the array, the resin containing conductive particles 242 By connecting to the flexible circuit board 126 via 244, the flexible circuit board 126 can be attached to the terminal portion 122 to form an electrical connection.

[0167] Figure 29 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in Figure 8, and terminals A flexible circuit board 126 is placed on top of section 122, and connection terminals are connected with conductive material. The state is shown. Figure 29 shows that one first sensor electrode 112 is connected to two rows of pixels 104. Therefore, a first connection terminal is provided at the terminal section 122 and connected to the switching circuit 120. The child 146a and the third connection terminal 148a provided on the flexible circuit board 126 are in close proximity. It is provided in this way. Even with this arrangement of connection terminals, the first connection terminal 146a and the third connection When connecting terminal 148a, the number of guides distributed within the resin 244 is controlled. By using the electrolytic particle 242, short circuits between adjacent terminals can be prevented.

[0168] Figure 30 shows that the second drive circuit 128 is composed of a composite integrated circuit that integrates multiple functions. An example is shown. The touch and fingerprint sensor-equipped display device 100 according to this embodiment is not limited to this example. Furthermore, as shown in Figure 30, the driver IC 125a drives the display unit 102 and touch and The driver IC125b that drives the fingerprint sensor is formed on a separate IC chip, making it flexible. It may also be mounted on the Bull circuit board 126.

[0169] Figure 31 shows the driver IC 125a that drives the display unit 102 and the touch and fingerprint sensors. This shows a plan view of the flexible circuit board 126 on which the driver IC 125b is mounted. The wiring from which the signal from the first sensor electrode 112 is output is connected to the driver IC 12 that drives the display unit. It passes through area 5a and reaches driver IC 125b, which drives the touch and fingerprint sensors. It is installed as follows: The driver IC 125a that drives the display unit is connected to the 6th connection terminal 149. The wiring passes through the area of ​​driver IC125b, which drives the touch and fingerprint sensor, and the 6th It is positioned to reach connection terminal 149.

[0170] The driver IC 125a that drives the display unit is connected to the scanning signal line drive circuit block 130 and data It may be partitioned in the signal line drive circuit block 132. This embodiment is shown in Figure 2. Therefore, the first drive circuit 118 serves as both the scan signal line drive circuit and the drive circuit for the second sensor electrode 114. It is sleeping. The signal that drives the scanning signal line to the first drive circuit 118 is the same as the signal that drives the display unit. The signal output from driver IC125a, which controls the drive of the second sensor electrode, is for touch and This is output from the driver IC125b that drives the fingerprint sensor.

[0171] As shown in Figures 30 and 31, the driver IC that drives the display unit and the touch and fingerprint sensors Even when a separate driver IC is provided to drive the subwoofer, the wiring structure can be changed. This allows two driver ICs to be mounted on the flexible circuit board 126.

[0172] According to the touch and fingerprint sensor-equipped display device of this embodiment, the data signal line is switched. By connecting to the circuit, the number of connection terminals can be increased even when touch and fingerprint sensor units are provided. It can be suppressed. In other words, by connecting the data signal line to the switching circuit, the first... Even when receiver electrodes are arranged at a high density, the increase in the number of connection terminals can be suppressed. As a result, connection failures with the flexible circuit board at the terminal can be reduced. .

[0173] According to the display device with touch and fingerprint sensors of this embodiment, the touch and fingerprint sensors Connect the second sensor electrode (transmitter electrode) of unit 110 to the scanning signal line of the display unit 102. By doing so, the scanning signal line of the display unit 102 is used as an auxiliary electrode to reduce the resistance of the second sensor electrode. They can be used in combination. Furthermore, the scanning signal line is provided in contact with the second sensor electrode, and the second gate... By connecting the electrode and the scanning signal line through the contact hole, the second gate insulating layer is thinned. This prevents short circuits between data signal lines and scan signal lines, and the transistor (thin film) The driving capability of the transistor can be increased. Furthermore, the scanning signal line can be connected to the second sensor electrode. By forming a metal layer in contact with the transistor, the metal layer forms a light-shielding layer for the transistor. It is possible.

[0174] [Second Embodiment] Figure 32 shows a display unit 102 with pixels 104 arranged, a first sensor electrode 112 and a second sensor Touch and fingerprint sensor section 110 with electrode 114, first drive circuit 118, switching circuit A touch and fingerprint sensor is provided with a path 120, a terminal section 122, and a flexible circuit board 126. The display device 100 with a scan signal is shown. The first drive circuit 118 sends the scan signal and the second scan signal to the scan signal line. A scanning signal line driving circuit 118a outputs a scan signal to the sensor electrode 114, and a scanning line and a second It includes an output switching circuit 118b that switches the connection with the sensor electrode 114.

[0175] The second drive circuit 128, similar to the first embodiment, integrates circuit blocks having different functions. It may be formed by a composite integrated circuit. Scan signal line drive circuit 118a and output switch The control signal for the replacement circuit 118b is output from the scan signal line drive circuit block 130.

[0176] Figure 33 shows the output switching circuit 118b corresponding to the arrangement of the second sensor electrode 114 shown in Figure 9. Here is an example. The output switching circuit 118b switches the scan signal line ( The first switching element 141_1 and the second sensor electrode 114(SC_) connected to G_1) Includes a second switching element 145_1 connected to 1). First switching element 141 _1 and the second switching element 145_1 are connected in parallel. Scan signal line (G_1~G_ A first switching element 141_1 to 141_n is provided for n), and a second sensor electrode For 114(SC_1~SC_n), the second switching elements 145_1~145_n It is provided. The first switching element 141_1 and the second switching element 145_1 are tra A gate formed by an inverter controls the on / off state of the first output switching signal line 143a, and the second output It was connected to the power switching signal line 143b. First output switching signal line 143a and second output switching signal Line 143b is connected to the second drive circuit 128 and the scan signal line drive circuit block 130 The on / off state is controlled by a control signal output from it.

[0177] During the display period, the control signal of the first output switching signal line 143a controls the first switching element When sub-units 141_1 to 141_n are turned on, the control signal of the second output switching signal line 143b is activated. The second switching elements 145_1~145_n are turned off, and the scan signal line (G_1~G_ The scanning signal is output sequentially to n). During the sensing period, the first output switching signal line 14 The control signal 3a turns off the first switching elements 141_1~141_n, and the second The control signal from output switching signal line 143b controls the second switching elements 145_1~145_n When this is turned on, scan signals are sequentially output to the second sensor electrodes 114 (SC_1~SC_n). Thus, the first drive circuit 118 controls the first switching elements 141_1~141 _n and the second switching elements 145_1~145_n allow scanning signal lines (G_1~G By switching between _n) and the second sensor electrode 114 (SC_1~SC_n), the display Scanning signal line drive circuit for driving unit 102 and scan circuit for touch and fingerprint sensor unit 110 It is possible to make them common.

[0178] Figure 34 shows the configuration of the switching circuit 118b corresponding to the arrangement of the second sensor electrodes 114 shown in Figure 10. Figure 10 shows that one second sensor electrode 114 is arranged for every two rows of pixels 104. Therefore, the number of second sensor electrodes 114 is half the number of scan signal lines. Therefore, the output The switching circuit 118b is connected to the scan signal line (G_1) with respect to the output of the first drive circuit 118. The first switching element 141_1 and the second sensor electrode 114(SC_1) are connected. A circuit in which a second switching element 145_1 is provided in parallel, and a second scanning signal line (G_2 A configuration in which circuits consisting only of the first switching element 141_2 connected to ) are arranged alternately. It has. Similarly, the configuration of the switching circuit 118b shown in Figure 34 also allows for scanning signal lines (G_1~G Switching between _n) and the second sensor electrode 114 (SC_1~SC_(n+1) / 2) It can drive the display device 100 with a cymbal sensor and fingerprint sensor.

[0179] The touch and fingerprint sensor display device shown in Figure 32 has a different configuration of the first drive circuit 118. Otherwise, it is the same as the touch and fingerprint sensor display device shown in the first embodiment, and has the same operation. You can achieve the desired effect.

[0180] [Third Embodiment] This embodiment, compared to the first embodiment, provides a drive circuit that outputs a scanning signal and a scan signal. An example of a touch and fingerprint sensor display device with a different configuration is shown below. Next, we will explain the differences from the first embodiment.

[0181] Figure 35 shows a display unit 102 with pixels 104 arranged, a first sensor electrode 112 and a second sensor Touch and fingerprint sensor section 110 with electrode 114, first drive circuit 118, switching circuit A touch and fingerprint sensor is provided with a path 120, a terminal section 122, and a flexible circuit board 126. The display device 100 with a scan signal is shown. The first drive circuit 118 outputs a scan signal to the scan signal line. Scanning signals are output to the scanning signal line drive circuit 118c and the second sensor electrode 114. It is divided into two circuit blocks, with circuit 118d.

[0182] The second drive circuit 128, similar to the first embodiment, integrates circuit blocks having different functions. It may be formed from a composite integrated circuit. Scan signal line drive circuit 11 of the display unit 102 The control signal to the scan circuit 118d of the 8c and touch and fingerprint sensor unit 110 is a scanning signal. Output from line drive circuit block 130.

[0183] The touch and fingerprint sensor display device 100 shown in Figure 35 includes a scanning signal line drive circuit 118 Since c and the scan circuit 118d are formed by two independent circuit blocks, It can simultaneously display images and perform touch and fingerprint sensor sensing.

[0184] Figure 36A shows a plan view of the second sensor electrode 114 corresponding to the configuration shown in Figure 35. 6B also includes a scanning signal line 106 provided on the second sensor electrode 114, and a selectable transient Sta 138 is shown by a dotted line. Figure 36B shows the cross-sectional structure corresponding to the section between C7 and C8 shown in Figure 36A. Figure 36C shows the cross-sectional structure corresponding to the section between C9 and C10.

[0185] As shown in Figure 36A, the second sensor electrode 114 is connected to the second sensor electrode layer 206 and the second auxiliary It consists of electrodes 207. As shown in Figure 36B, the second sensor electrode 114 and the scanning signal line 1 Between 06 are the fourth transparent resin layer 202d, the first insulating layer 210, and the second insulating layer 212. They are provided and the two are insulated from each other. With this wiring structure, the second sensor electrode 114 It is possible to input the scan signal for the signal line 106 and the scan signal for the scan signal line 106 simultaneously. In other words, the touch and fingerprint sensor-equipped display device 100 can display an image while also allowing fingerprint detection. It is possible to detect this.

[0186] Figure 37 shows the timing chart of the touch and fingerprint sensor display device 100 shown in Figure 35. The image shows the touch and fingerprint sensor display device 1 according to this embodiment. As shown in Figure 37, the touch and fingerprint sensor display device 1 according to this embodiment 00 appears at the same time as the display period and the sensing period. The display device 100 with a cymbal and fingerprint sensor has a first drive circuit 118 that controls the display unit 102 The scanning signal line drive circuit 118c and the scan circuit 118d of the touch and fingerprint sensor unit 110 It is provided in an independent circuit block, and the data signal in the second drive circuit 128 The line drive circuit block 132 and the touch and fingerprint sensor detection circuit block 134 also operate independently. Because it is constructed using road blocks, it is possible to display images and sense simultaneously. .

[0187] According to the touch and fingerprint sensor-equipped display device 100 of this embodiment, for example, video It is possible to perform touch or fingerprint sensing while displaying. Other configurations are shown in the first embodiment. It is the same as a touch and fingerprint sensor display device and can achieve the same effect. Cut.

[0188] [Fourth Embodiment] This embodiment is a modified version of the touch and fingerprint sensor-equipped display device 100 shown in the first embodiment. A portion of the transparent resin substrate 200 is replaced with ultra-thin tempered glass (UTG). Let me explain one example.

[0189] Figure 38 shows a touch and fingerprint sensor using ultra-thin tempered glass in part of a transparent resin substrate 200. A sensor-equipped display device 100 is shown. Specifically, the transparent resin substrate 200 according to this embodiment is shown in Figure 1. In the structure of the transparent resin substrate 200 shown in Figures 16A and 16B, the first transparent resin layer 202a Ultra-thin tempered glass is applied. The thickness of the applied ultra-thin tempered glass is 25μm~50 μm, for example 30 μm. As shown in Figure 38, the transparent resin substrate 20 according to this embodiment To prevent damage, the four corners of the 0 model are machined to a rounded shape with a radius (R) of 2mm to 5mm. The ultra-thin tempered glass is bendable, and such a transparent resin substrate 200 The touch and fingerprint sensor-equipped display device 100 used is an electric device with a foldable display screen. It can be applied to sub-devices (e.g., smartphones, tablet devices, etc.). The configuration according to this embodiment includes touch and fingerprint sensors as shown in the second and third embodiments. It can be applied to display devices.

[0190] [Fifth Embodiment] In this embodiment, the drive circuit is mounted using a chip-on-plastic (Chip On Plastic) method. An example of a touch and fingerprint sensor display device using the implementation method of astic:COP) show.

[0191] Figure 39 shows a touch and fingerprint sensor using ultra-thin tempered glass in part of a transparent resin substrate 200. The sensor-equipped display device 100 is shown. Display unit 102, touch and fingerprint sensor unit 110, first The drive circuit 118, the switching circuit 120, the terminal section 122, and the transparent resin substrate 200 are as described in the fourth embodiment. It is similar to the one shown in the form. On the other hand, in this embodiment, the second drive circuit 128 is transparent It differs in that it is mounted on a resin substrate 200.

[0192] Similar to the transparent resin substrate shown in the fourth embodiment, the transparent resin substrate 200 of this embodiment also has four The corners are processed into a rounded shape with a radius (R) of 2mm to 5mm. When using thin tempered glass, having such a corner shape makes the assembly process This prevents damage to the four corners and improves yield.

[0193] Figure 40 shows the region where the second drive circuit 128 is mounted and the cross-sectional structure of the terminal section 122. The drive circuit 128 includes a first pad 135a and a second pad 135b. 35a is connected to the first connection terminal 146a via conductive particle 242 and the second pad 135 b is connected to the second connection terminal 146b via the conductive particle 242. Second drive circuit 128 By employing a non-heated, room-temperature pressurized mounting technology, it can be mounted on a transparent resin substrate 200. The conductive particles 242 are dispersed in the resin 244, and this is explained in detail in the description of Figure 28. As explained in detail.

[0194] A terminal portion 122 is provided outside the area where the second drive circuit 128 is mounted. Figure 40 shows The shield electrode 116 and the first insulating layer 210 are located away from the area where the second drive circuit 128 is mounted. The structure extends to the region of sub-part 122. With this structure, the second drive cycle This increases the rigidity of the area where the road 128 is implemented, preventing deformation and peeling of the connection terminals. This makes it possible to improve the yield of the process of connecting the second drive circuit 128. This is possible. In addition, a highly rigid para-polyamide resin is used for the fourth transparent resin layer 202d. And even better.

[0195] As shown in Figures 39 and 40, the second drive circuit 128 is mounted on the transparent resin substrate 200 using CPO. By implementing this, it is possible to realize a display device 100 with touch and fingerprint sensors. The touch and fingerprint sensor-equipped display device 100 according to this embodiment includes a second drive circuit 12 Since component 8 is mounted on the transparent resin substrate 200, the flexible circuit board is omitted, The number of items and manufacturing processes can be reduced.

[0196] [Sixth Embodiment] This embodiment has a touch and The configuration of the fingerprint sensor-equipped display device 100 is shown.

[0197] Figure 41 shows an example of an equivalent circuit for pixel 104, and is an example of a voltage-writing type pixel circuit. This shows that, as described in the first embodiment, pixel 104 is a first sub-pixel 105r, second sub-pixel 105g includes the third subpixel 105b, but Figure 41 shows the first subpixel 105r and the second subpixel 10 The configuration of 5g is shown in detail. Pixel 104 is a column of the first sub-pixel 105r, and the second sub-pixel 105g The configuration has a row of pixels and a row of third subpixels 105b arranged in a stripe pattern.

[0198] The first sub-pixel 105r has a drive transistor 136r, a selection transistor 138r, and a capacitance. The element includes element 140r and EL element 142r, and the second sub-pixel 105g is a drive transistor Includes 136g of material, 138g of selection transistors, 140g of capacitive elements, and 142g of EL elements. The first sub-pixel 105r is selected by transistor 138r, and the second gate electrode is connected to the scan signal line 10 It is connected to 6 (GBn) and the source side is connected to data signal line 108 (Dm). Second subframe The selected transistor 138g of element 105g has its second gate electrode connected to the scan signal line 136(GAn). The source side is connected to data signal line 108 (Dm+1). The select transistor 138b of element 105b has its second gate electrode connected to the scan signal line 136(GBn The source side is connected to the data signal line 108 (Dm+1). In the embodiment, the pixel circuit has different second gate electrodes for the selection transistors of adjacent subpixels. It has a configuration in which it is connected to a scanning signal line, and the source side is connected to the same data signal line. Furthermore, pixel 104 has a common wiring 144 which connects the row Lr of the first sub-pixel 105r and the second sub-pixel 10 It is arranged to be shared with column Lg of column 5g.

[0199] Figure 42 shows the timing chart for driving pixel 104 shown in Figure 41. 2 is when the scan signal of scan signal line 106 (GAn) is at time t -1 So it's low level (L level) Then it transitions to a high level (H level) and the select transistor 138g turns on, and the same When a data signal is input to the data signal line 108 (Dm+1), the second sub-pixel 105g receives the data signal. The data is written, and at time t0 the scan signal transitions to a low level, and the selected transistor 138g The signal is turned off, and at the same time the scan signal of scan signal line 106 (GBn) is at a low level at time t0. The transition from L level to high level (H level) occurs between the selection transistor 138r and the selection transistor. The transistor 138b turns on, and in synchronization with this, the data signal line 108(Dm) and data A data signal is input to the signal line 108(Dm+1) and the first sub-pixel 108r and the third sub-pixel Data is written to 108b, and at time t1 the scan signal transitions to L level and the selection transition occurs. This shows the operation in which transistor 138r and selection transistor 1438b are turned off.

[0200] In this way, adjacent subpixels (first subpixel 105r and second subpixel 105g, second subpixel The selection transistors for 105g and the third sub-pixel 105b are connected to different scanning signal lines. Therefore, data is collected between adjacent subpixels (for example, the second subpixel 105b and the third subpixel 105b). By sharing the signal line 108 (Dm+1), data can be written at different timings. This allows for a reduction in the number of data signal lines. In other words, the number of connection terminals in the terminal section 122 can be reduced.

[0201] Figure 43 shows an example of an equivalent circuit for pixel 104, and is an example of a current-writing type pixel circuit. This shows that pixel 104 has the first sub-pixel 105r, the second sub-pixel 105g, and the third sub-pixel 105b. Figure 43 shows in detail the configuration of the first sub-pixel 105r and the second sub-pixel 105g.

[0202] The first sub-pixel 105r is the first transistor 138r (selection transistor), the second transistor Zistor 139r, drive transistor 136r, light emission control transistor 137r, capacitive element Includes 140r and EL element 142r. First transistor 138r and second transistor In the 139r, the second gate electrode is connected to the scan signal line 106 (GBn), and the source side is data It is connected to the signal line 108 (Dm). The drain side of the first transistor 138r is the drive The second gate electrode of the transistor 136 and the capacitive element 140 are connected, and a data signal is written to them. It is used to control the timing. The second transistor 139r is the drive transistor It is connected to the drain of transistor 136 and turns on at the same timing as the first transistor 138r. The operation is controlled and provided to compensate for the threshold voltage of the drive transistor 136r. The light emission control transistor 137r is connected to the EL element 142r and the drive transistor 136r. They are connected in series in between, and the second gate is connected to the second scan signal line 107(En) and the EL element This controls the timing of the light emission of 142r. The second sub-pixel 105g has a similar configuration.

[0203] Between the second scanning signal line 107 and the drain of the first transistor 138r, there is a second capacitance element. A sub-element 274r may be provided. By providing the second capacitance element 274r, the first transistor As the gate-drain capacitance Cgd changes when the ZISTA 138r falls, the capacity This makes it possible to suppress the voltage fluctuation of element 140r by ΔVgd.

[0204] Although not shown in the diagram, the first sub-pixel 105r has a similar configuration to the column Lr and the first transient The source side of the first and second transistors is connected to the data signal line 108 (Dm+1), and The second gate electrode is connected to the scan signal line 106 (GBn), and the second gate electrode of the light emission control transistor The third sub-pixel 105b has a column of electrodes connected to the second scanning signal line 107(En). .

[0205] Figure 44 shows the timing chart for driving pixel 104 shown in Figure 43. 4 is when the scan signal of scan signal line 106 (GAn) is at a low level (L level) at time t0. Transitioning to a high level (H level), the first transistor 138g and the second transistor 13 9g is turned on, and in synchronization with this, a data signal is input to data signal line 108 (Dm+1). Then data is written to the second sub-pixel 105g, and the drive transistor 136g An operation is performed to compensate for the high-value voltage. At time t1, the scan signal of scan signal line 106 (GAn) When it transitions to an L level, the first transistor 138g and the second transistor 139g turn off. At the same time, the scan signal of scan signal line 106 (GBn) becomes low level (L level) at time t1. ) transitions from high level (H level) to the first transistor 138r and the second transistor When TA139r is turned on, a data signal is input to data signal line 108(Dm) in synchronization with this. The threshold voltage of the first subpixel 108r is used to write data and drive the transistor 136r. Pressure compensation is performed. During this data writing period, the second scan signal line 107(En) is at an L level, and the light emission control transistors 137r and 137g are O It's written as "Fu".

[0206] When the data writing period ends, it transitions to the light emission period. That is, the second scan signal line 1 When 07 transitions from L level to H level, the light emission signal is input, and the light emission control transistor 13 7r and 137g are turned on. This turns on the first sub-pixel 105r and the second sub-pixel 108g Then, the current corresponding to the drain current of the drive transistors 136r and 136g is applied to the EL element 142 r flows to 142g and emits light.

[0207] The selection transistors for adjacent subpixels (first subpixel 105r and second subpixel 105g) are different. By connecting to the scan signal line, the number of data signal lines 108 can be reduced. The number of connection terminals in the terminal section 122 can be reduced.

[0208] Figure 47 shows the arrangement of the data signal line 108 and common wiring 144 as shown in Figures 41 and 43. The data signal line 108 is located above the fourth transparent resin layer 202d, The common wiring 144 is located between the third transparent resin layer 202c and the fourth transparent resin layer 202d. It is provided so as to be in contact with the shield electrode 116. The shield electrode 116 is formed of a transparent conductive film. In contrast, the common wiring 144 is formed of a metal film. The common wiring 144 is striped It is provided in a tubular pattern so as to extend from one end to the other end of the shield electrode 116. This makes it possible to reduce the resistance of the shield electrode 116.

[0209] Figure 46 shows that in this embodiment, a portion of the transparent resin substrate 200 is made of ultra-thin tempered glass. The display device 100 with touch and fingerprint sensors is shown. The touch and fingerprint sensors shown in Figure 46 The attached display device 100 does not have a switching circuit 120, and the third connection terminal 148a and Except for the configuration of the second scanning signal line drive circuit 118e, the configuration is the same as that shown in Figure 39. To possess.

[0210] In the second drive circuit 128, the third drive circuit is provided in the data signal line drive circuit block 132. The connection terminal 148a is connected to the data signal line 108, and data is transmitted without going through the switching circuit. The signal is output to each pixel 104 of the display unit 102. As shown in Figures 41 and 43, The number of signal lines 108 is arranged so that they are shared by adjacent pixel rows, so the third connection The number of terminals 148a has been reduced compared to conventional designs.

[0211] Figure 45 shows details of the connection between the transparent resin substrate 200 and the second drive circuit 128. The resin substrate 200 is provided with a first connection terminal 146a and a second connection terminal 146b. Terminal 146a is connected to the data signal line 108, and the second connection terminal 146b is connected to the first sensor electrode. 112 is connected. The third connection terminal 148a of the second drive circuit 128 is connected to the first connection terminal 146 It is connected to a, and the fourth terminal 148b is connected to the second connection terminal 146b. The connection part is made of resin. Conductive particles 242 dispersed within 244 are used. Details of the connection structure are shown in Figure 28. It is similar in structure.

[0212] According to this embodiment, the display unit 102 has pixels corresponding to each color arranged in a stripe pattern. In the case where the configuration is such that adjacent pixel rows share a data signal line 108, By having this, the number of data signal lines 108 is reduced, and consequently the switching circuit 120 is not used. This also reduces the number of connection terminals.

[0213] [Seventh Embodiment] This embodiment shows the layout of each element constituting the voltage-writing type pixel 104 shown in Figure 43. Here is an example of T.

[0214] Figure 48 shows an example of the layout of the first sub-pixel 105r and the second sub-pixel 105g. 1 Sub-pixel 105r consists of the first transistor 138r, the second transistor 139r, and the drive transistor It has an radiator 136r, a light emission control transistor 137r, and a capacitive element 140r, and a second sub-image The 105g component consists of the first transistor at 138g, the second transistor at 139g, and the drive transistor... It has a 136g transistor, a 137g light emission control transistor, and a 140g capacitive element. Each layer constituting sub 142r and 142g is omitted. Also, the first sensor electrode 112 and The second sensor electrode 114 is also omitted.

[0215] Focusing on the first sub-pixel 105r, the first transistor 138r is the first oxide semiconductor layer 180a, a third metal oxide conductive layer 176c forming the source, and a fourth metal oxide conductive layer forming the drain. The oxide conductive layer 176d is laminated with the first scanning signal line 106 (GBn), and the first transistor A second gate electrode 153, formed of a transparent conductive film extending in the region of 138r, is shown in the figure. It is laminated via a second insulating layer 212, and also via a first insulating layer 210 (not shown). It has a structure in which first gate electrodes 152 formed by a gold electrode 116 are stacked. The first gate electrode 152 is located in the lower layer of the first oxide semiconductor layer 180a, and the second gate electrode The electrode 153 is provided in the upper layer.

[0216] The second transistor 139r has the same configuration as the first transistor 138r, and The fifth metal oxide conductive layer 176e that forms the drive transistor 136r is the second It has a configuration that connects to the metal oxide conductive layer 176a.

[0217] The drive transistor 136r consists of a first oxide semiconductor layer 180a and a first metal oxide conductive layer 1 The second gate electrode 153 and the same layer so as to cover 76a and the second metal oxide conductive layer 176b It has a structure in which a second gate electrode 151 is provided. The second gate electrode 151 and the second metal oxide Capacitive elements 140r are formed in the region where the material conductive layer 176b overlaps.

[0218] The light emission control transistor 137r consists of a first oxide semiconductor layer 180a and a first metal oxide conductive layer. A sixth metal oxide conductive layer 176f is connected to layer 176a, and this conductive layer is arranged with gaps between it. The seventh metal oxide conductive layer 176g is formed, overlapping with these two metal oxide conductive layers, and the second A scanning signal line 107(En) is formed, and the region overlaps with the region of the light emission control transistor 137r. A second gate electrode 268 is formed therein, and a shield electrode 116 (not shown) is formed therein. It has a structure in which the first gate electrode (266) is stacked. And, an EL element (not shown) 142r is connected to the light emission control transistor 137r via the 8th contact hole 264. It will be done.

[0219] The second sub-pixel 105g has a similar configuration, and the first sub-pixel 105r is connected to the common wiring 144. It has a layout that is inverted both in the mind and vertically.

[0220] Figure 49 shows a partial cross-sectional structure of the first subpixel 105r, which was mainly explained in Figure 48. This shows the cross-sectional structure of the light emission control transistor 137r, the capacitive element 140r, and the EL element 142r. As shown in Figure 49, the light emission control transistor 137r is located in the sixth metal oxide conductive layer 176 f and the second metal oxide conductive layer 176g are the first insulating layer 210 and the first oxide semiconductor layer 180 It is provided between a, and the first gate electrode 248 is formed in the same layer as the shield electrode 116. The second gate electrode 250 (second scanning signal line 107) is connected to the first oxide via the second insulating layer 212. It is provided so as to overlap with the semiconductor layer 180a. The capacitive element 140r is located in the second insulating layer 2 A transparent conductive film and a second metal oxide conductive film superimposed on 12 to form the second gate electrode 151. The second metal oxide conductive layer 176b is formed by the fifth contact hole. The structure is connected to the shield electrode 116 by the wire 166. The EL element 142r is From the first electrode 220 (cathode) side, the electron transport layer 222, electron injection layer 224, and light-emitting layer 226. The electron blocking layer 227, hole transport layer 228, hole injection layer 230, and second electrode 232 are It has a stacked structure. A planarization layer 246 is placed on top of elements such as the light emission control transistor 137r. A passivation layer 248 is provided. The EL element 142r is placed on the planarization layer 246. It gets kicked.

[0221] Figure 50 shows the planar layout of the EL element 142 and the cross-sections between E1-E2 and E3-E4. The structure is shown. The peripheral edge of the first electrode 220 is covered with a partition wall 262. Also, the first electrode 22 The eighth contact hole 264, to which the light emission control transistor 137 is connected, is also partitioned by partition 262. It is provided in a position that is covered by it. When the electron transport layer 222 is formed of a coated material, electron The transport layer 222 is located on the upper surface of the first electrode 220 and is provided in the region surrounded by the partition wall 262. . Electron injection layer 224, electron blocking layer 227, hole transport layer 228, hole injection layer 230 When manufactured by vapor deposition, it is provided so as to cover the partition wall 262 and spread over the entire display section 102. The light-emitting layer 226 is made using a shadow mask during deposition, overlapping the opening of the partition wall 262. It is provided in such a way. In addition, the light-emitting layer 226 is coated by inkjet coating, gravure offset It is also possible to form them using methods such as net printing.

[0222] As is clear from Figures 48 and 50, the EL element 142 and the first transistor 138, second transistor 139, drive transistor 136, and light emission control transistor They are arranged so that 137 and 137 overlap. The gates of these transistors that form the pixel circuit The electrodes, source and drain electrodes, and oxide semiconductor layer are made of a transparent material that transmits visible light. Therefore, even if the EL element 142 is of the bottom emission type, the transparent resin substrate 200 Light can be emitted to the outside through it.

[0223] [Eighth Embodiment] The drive transistor 136 that drives the EL element 142 maintains a voltage based on the data signal. To hold, it has a capacitive element 140. Here, the voltage information written to the capacitive element 140 However, due to the gate-drain capacitance Cgd of the selected transistor 138, the gate voltage rises. When it decreases, it fluctuates by ΔVgd. This is not a problem if the capacitance of the capacitive element 140 is large. However, in small and medium-sized displays, the pixel size has decreased due to the increased resolution, and capacity When the capacitance of element 140 cannot be made large enough, this effect cannot be ignored. Also, current writing In the integrated method, increasing the capacity of the capacitive element 140 requires increasing the writing time. However, due to the relationship between the number of pixels and the drive frequency, sufficient writing time cannot be obtained, which hinders gradation expression. This presents a problem.

[0224] Figure 51 shows an example of a pixel circuit that can suppress the fluctuations in ΔVgd described above. Specifically, the sub-pixel 105 is driven by the first transistor 138 (selection transistor). It is connected to the gate of the transistor 136 to apply a data signal, and drives the EL element 142. In a configuration in which a light-emitting control transistor 137 is connected between the dynamic transistor 136, The second transistor 139 is connected to the data line signal 108 and the drain of the light emission control transistor 137. It is connected between and the second gate of the second transistor 139 and the drive transistor 136. By connecting the second capacitance element 274 between the electrode and the gate electrode, the gate of the first transistor 138 The design ensures that the voltage across capacitive element 140 does not fluctuate by ΔVgd when the voltage falls. .

[0225] Figure 52 shows the planar layout of the subpixel 105 shown in Figure 51, and Figure 53 shows the subpixel 105 A partial cross-sectional structure of the first transistor 138, the second capacitance element 274, and its The cross-sectional structure of the EL element 142 located on the upper side is shown. The second capacitance element 274 is the second capacitance Electrode 272 is connected to the fourth metal oxide conductive layer 176d extending from the first transistor 138 and the second insulating layer It has a structure that is arranged to overlap via the edge layer 212. The second capacitive electrode 272 is a drive Since it can be formed in the same layer as the second gate electrode 151 of transistor 136, It can be formed without the need to add layers and without increasing the number of photomasks. .

[0226] Furthermore, the layout diagram of subpixel 105 in Figure 54 and the partial cross-sectional view of subpixel 105 in Figure 55 are shown below. As shown, the second gate electrode 151 of the drive transistor 136 is connected to the light emission control transistor 1 A fourth metal oxide conductive layer 17 extends from the first transistor 138 and is connected to the drain of 37. The second capacitive element 274 is formed by providing 6d so as to overlap with the second insulating layer 212. You may do so.

[0227] In this way, by providing the second capacitance element 274, the gate of the selection transistor 138 - The drain-to-drain capacitance Cgd causes the gate voltage to fluctuate by ΔVgd when it falls. This makes it possible to suppress voltage fluctuations of the capacitive element 140. This embodiment is based on the first embodiment. This can be implemented in appropriate combination with a display device equipped with touch and fingerprint sensors.

[0228] [Ninth Embodiment] This embodiment provides an EL element 142 in a display device 100 with a touch and fingerprint sensor. An example of a light extraction structure is shown.

[0229] Figure 56 shows the cross-sectional structure of the sub-pixel 105 according to this embodiment. In 105, a wire grid polarizer 250 is provided on the side where the EL element 142 emits light. It has a structure. For example, the wire grid polarizer 250 has a first sensor electrode 112 and a second A sensor electrode 114 is provided between the transparent resin substrate 200 and the EL element 142. Specifically, Figure 56 shows that the wire grid polarizer 250 is provided on the upper surface of the shield electrode 116. An example is shown. The EL element 142 has the first electrode 22 as described with reference to Figure 16A. Between 0 and the second electrode 232, there is an electron transport layer 222, an electron injection layer 224, an emissive layer 226, and a positive It has a structure in which a pore transport layer 228 and a hole injection layer 230 are stacked.

[0230] Since the EL element 142 emits light toward the transparent resin substrate 200, the first electrode 220 is transparent The EL element 1 shown in this embodiment is formed of a light-conductive film, and the second electrode 232 is formed of a metal film. In addition, in 42, a light scattering layer 251 is provided between the electron injection layer 230 and the second electrode 232. It has a structure. The light scattering layer 251 contains transparent adhesive ink 254 containing transparent light scattering beads 252. It is formed by coating the electron injection layer 230. For example, transparent light scattering beads 2 A transparent adhesive ink 254 containing 52 is applied to sub-pixels 10 by a printing method such as inkjet printing. By applying it to region 5, a light scattering layer 251 can be formed.

[0231] Figure 58 shows the detailed structure of wire grid polarizer 250. Wire grid polarizer 2 50 has a structure in which fine wire patterns are arranged periodically. The fine wire patterns are made of aluminum ( Aluminum alloy (Al), aluminum-silver alloy (AlAg), aluminum alloy with silicon or neodymium added. It is made of metal fine wire 258 formed from nium alloys (Al-Si, Al-Nd), etc. A light-absorbing layer 256 that absorbs visible light is provided on the shield electrode 116 side of the nanowire 258. It may also be made of silicon (Si), germanium (Ge), silicon. Semiconductor materials with visible light absorption bands, such as germanium (SiGe), and high melting point metal silica Id (chromium (Cr), cobalt (Co), nickel (Ni), tantalum (Ta), molybdenum Compounds of silicon with high-melting-point metals such as butene (Mo), titanium (Ti), and niobium (Nb) It is preferable that it be formed from ). The width of the metal fine wire 258 is 100 nm or less, preferably 7 It has a wavelength of 0 nm or less, a thickness of 100 nm or more, preferably 200 nm or more, and the wavelength of visible light is They are arranged at a pitch of less than half (for example, less than 200 nm). Therefore, the metal is not visible to the naked eye. A glossy surface is visible, but the visible side of the wire grid polarizer 250 has a thin metal wire 25 By providing a light-absorbing layer 256 on top of 8, it is possible to prevent the display screen from becoming mirror-like. ru.

[0232] Figure 59 shows an example in which a wire grid polarizer 250 is placed on an insulating layer 260. The metal nanowires 258 that make up the Yagrid polarizer 250 have a pitch of less than half the wavelength of visible light. Since it is arranged at a wavelength of (for example, 200 nm or less), it can also serve as a shield electrode 116. At this time, the metal wire 258, like the shield electrode 116, is at a constant potential (for example, It is preferable that the potential is controlled to the ground potential.

[0233] The wire grid polarizer 250 is a linear polarizer and has a transmitted polarization axis and a reflected polarization axis. As shown in Figure 68, the EL element 1 is provided with a wire grid polarizer 250. Of the 42 emitted light components, the polarization component parallel to the transmitted polarization axis (TM wave) is transmitted to the transparent resin substrate 20 The polarization component (TE wave) emitted from 0 and parallel to the reflected polarization axis is reflected. That is, EL Half of the light emitted from element 142 is reflected by the wire grid polarizer 250 and returned to the EL element The light is incident on element 142. The light that is re-incident on EL element 142 is scattered by the light scattering layer 251 and the polarization axis The polarization becomes random. Then it is emitted again from EL element 142, and some of it is wire grid polarized. The component is transmitted through sub-250 and emitted to the outside, while the remaining component is reflected. In this way, the wire grid By providing a polarizer 250 and a light scattering layer 251, the light emitted from the EL element 142 is divided into multiple layers. By causing multiple reflections, the polarization axis of the emitted light can be converged in one direction.

[0234] Although not shown in Figure 56, the display device 100 with touch and fingerprint sensors has a counter To improve performance, a polarizing axis rotating plate is provided on the display screen side. The polarizing axis rotating plate is a linear polarizing plate. It is a combination of 1 / 2 phase difference plates, with the linear polarization axis and the 1 / 2 phase difference delay axis being at a 45-degree angle. They are assembled in an inclined state. At this time, as shown in Figure 60, wire grid polarizer By positioning the linear polarization axis of the polarization axis rotating plate at a 45-degree angle relative to the 250 transmitted polarization axes, E This significantly improves the efficiency of extracting light emitted from the L element 142.

[0235] The direction of the transmitted polarization axis of the wire grid polarizer 250 changes the direction in which the metal thin wire 258 extends. This allows for free setting. Figure 61 shows the scan signal line 106 and the data signal. A pattern of 258 thin metal wires is provided within the area enclosed by line 108 (the area of ​​sub-pixel 105). An example is shown. As shown in Figure 61, the thin metal wire 258 has the scanning signal line 106 extending from it. By having a pattern that extends in a direction parallel to the direction, the transmitted polarization axis is aligned with the data signal line 1 It is positioned parallel to the direction in which 08 extends. Although not shown in the diagram, metal thin wire 258 However, it is also possible that the data signal line 108 has a pattern that extends in a direction parallel to the direction in which it extends. Figure 62 shows the pattern of the metal wire 258, which is the scan signal line 106 and the data signal line 108. By having a pattern that is tilted at a predetermined angle relative to the metal, the transmitted polarization axis is This example shows the arrangement perpendicular to the longitudinal direction of line 258.

[0236] Figure 57 shows that the wire grid polarizer 250 is arranged to be embedded in the planarization layer 246. Here is an example. The metal wire 258 is formed with a thickness of approximately 100 nm to 200 nm. By embedding such thin metal wires 258 in the planarized film 246, wire grip Even if the head polarizer 250 is provided in a so-called in-cell configuration, the flatness is not obstructed. It is possible to provide option 2.

[0237] Figure 66 shows an example in which a wire grid polarizer 250 is provided on the upper surface of the first electrode 220. The metal nanowires 258 and the light-absorbing layer 256 that constitute the wire grid polarizer 250 are first Formed on a transparent conductive film that forms the electrode 220. Metal nanowire 258 and light-absorbing layer 256 The first electrode 220 has an uneven surface, but the electron transport layer 222 is made of a coating material. By embedding the thin metal wire 258, the light-emitting layer 226 is prevented from being affected. This prevents short circuits with the second electrode 232.

[0238] Figure 67 shows a plan view of the first electrode 220 and the metal wire 258. The metal wire 258 is the first It is provided on a transparent conductive film that forms the electrode 220. From one end of the first electrode 220 to the other end A thin metal wire 258 is formed to extend toward the side. Also, as shown in Figure 67, A metal pattern is provided surrounding the outer circumference of the first electrode 238 with a metal film that forms the wire 258, and a metal fine wire By connecting 258, the resistance of the transparent conductive film (first electrode 220) can be reduced.

[0239] As shown in this embodiment, in the layer forming the touch and fingerprint sensor display device 100 By providing a wire grid polarizer 250, the polarization axis is set to improve contrast. Even with the addition of a rotating plate, the efficiency of light extraction can be significantly improved.

[0240] [Tenth Embodiment] This embodiment represents a further variation of the sealing structure and lead wiring structure shown in the first embodiment. This indicates a change.

[0241] Figure 63A shows the lead wire 147 formed on the same layer as the data signal line 108. The diagram shows a structure in which the two sensor electrodes 114 are connected to wiring or circuits on the transparent resin substrate 200. Outlet wiring 147 is provided on the first insulating layer 210, the first insulating layer 210, fourth transparent resin It is connected to a contact hole 159 that penetrates layer 202d and the third transparent resin layer 202c. The structure is shown. Above the first lead wire 147 and the first contact hole 159 is the second insulation An edge layer 212 is provided, and it is further covered with a silicon nitride film 214c, thus the outside It can prevent moisture from entering.

[0242] Figure 63B shows the lead formed in the same layer as the scan signal line 106 or the second scan signal line 107. The wiring 147 brings the second sensor electrode 114 into contact with the wiring or circuit on the transparent resin substrate 200. The connected structure is shown. This lead wire 147 is provided on the second insulating layer 212. Contact holes penetrating the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 202d By the 159, the third transparent resin layer 202c is formed in the same layer as the shield electrode 116. It is connected to the first lead wire 147a. Furthermore, the first lead wire 147a is connected to the third The second sensor electrode 114 is connected by a contact hole 169 formed in the transparent resin layer 202c. It is connected to the transparent resin substrate 2. It can be connected to wiring or circuits on 00.

[0243] Figure 64A shows the structure shown in Figure 22A, with the lead wire 147 on the second insulating layer 212. The structure provided is shown. The lead wire 147 is formed on the same layer as the second scan signal line 107. Because the pull-out wiring 147 is covered with a silicon nitride film 214c, The outgoing wiring 147 has a structure that extends outward so as to form a second connection terminal 146b. However, a structure can be formed that adheres closely to the sealing layer 236, thereby improving reliability. .

[0244] Figure 64B shows the connection structure between the second electrode 232 and the third connecting terminal 146c. Second electrode 232 is led out to the edge of the transparent resin substrate 200 and is formed in the same layer as the second scanning signal line 107. The lead wire 147 is connected to the third connection terminal 146. It has a structure that extends outward to form c, but even in this structure the lead wiring 14 7 is covered with a silicon nitride film 214c, forming a structure that adheres closely to the sealing layer 236. This can be done, and reliability can be increased.

[0245] Figure 65A shows the connection structure between the data signal line 108 and the first connection terminal 146a. Signal line 108 is brought out to the end of the transparent resin substrate 200 and is the same as the second scan signal line 107. It is connected to a lead wire 147 formed in layers. This lead wire 147 is the first connection It has a structure that extends outward to form terminal 146a, but even in this structure, The wiring 147 is covered with the silicon nitride film 214c, thereby making it tightly attached to the sealing layer 236. It is possible to form a structure and increase reliability.

[0246] Figure 65B shows the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer, compared to Figure 63B. 202d, through a contact hole 159 that penetrates the third transparent resin layer 202c, This shows a structure in which the wiring 147 is directly connected to the second sensor electrode 114. However, the second sensor electrode 114 can be connected to wiring or circuits on the transparent resin substrate 200. Cut.

[0247] In Figures 16, 19, 21, 49, 53, and 55, the display panel is visible from the outside. External light entering the interior is reflected by the various metals that make up the display panel and then returns to the outside. When exposed to light, the contrast is significantly reduced. To prevent this, in reality, a circular polarizer (an optical unit combining a linear polarizer and a quarter-wave plate) is used. The material is installed so as to be in close contact with the transparent resin layer 202a, but this is omitted in the above drawing. ru.

[0248] Figures 56, 57, and 66 show wire grids to improve light extraction efficiency. The image shows a display panel with a built-in polarizer 250, but when ambient light is incident on it, the gold that makes up the display panel... The various electrodes and wiring formed from the same material are reflected and then emitted back into the outside world. The contrast is significantly reduced. To prevent this decrease in contrast, Beneath the electrodes and wiring formed from the metal material that constitutes the display panel, there is a wire grid bias. It is preferable that a light-absorbing layer similar to the light-absorbing layer 256 constituting the photon 250 be provided, This is omitted in the above diagram. [Explanation of Symbols]

[0249] 100... Display device with touch and fingerprint sensor, 102... Display unit, 104... Image Element, 105... Sub-pixel, 106... Scan signal line, 107... Second scan signal line, 10 8...Data signal line, 110...Touch and fingerprint sensor section, 112...First sensor Electrode, 114...Second sensor electrode, 116...Shield electrode, 118...First drive Circuit, 118b... Output switching circuit, 118c... Scan signal line driving circuit, 118d... • Scan circuit, 120... Switching circuit, 122... Terminal section, 124... Sealing layer, 1 25...Driver IC, 126...Flexible circuit board, 127...Film substrate Materials, 128...Second drive circuit, 129...Wiring group, 130...Scan signal line drive circuit Block 132...Data signal line drive circuit block, 134...Touch and fingerprint sensor Sensor detection circuit block, 135... pad, 136... drive transistor, 137... ··Light emission control transistor, 138···Selection transistor (first transistor), 13 9...2nd transistor, 140...capacitor element, 142...EL element, 141... • First switching element, 143... Output switching signal line, 144a... Common electrode, 1 44b...Common wiring, 145...Second switching element, 146...Connection terminal, 147...Outlet wiring, 148...Connection terminal, 149...6th connection terminal, 150 ...First gate electrode, 151...Second gate electrode, 152...First gate electrode, 1 53...Second gate electrode, 154...Power line, 156...Switching element, 15 7...Control signal line, 158...First opening, 159...First contact hole, 1 60...Second opening, 161...Second contact hole, 162...Third opening, 163...3rd contact hole, 164...4th opening, 165...4th contact Contact hole, 166...5th contact hole, 168...7th contact hole, 169... Contact hole, 170... Source wiring, 171... 8th contact Hall, 172...connection wiring, 173...drain wiring, 174...source electrode, 175...9th contact hole, 176...metal oxide conductive layer, 180...oxide Semiconductor layer, 200... transparent resin substrate, 202... transparent resin layer, 204... first cell Electrode layer, 205...First auxiliary electrode, 206...Second sensor electrode layer, 207...First 2 auxiliary electrodes, 208... light-shielding layer, 210... first insulating layer, 212... second insulating layer, 214...Silicon nitride film, 215...Silicon oxide film, 216...Third insulating layer, 220...first electrode, 222...electron transport layer, 224...electron injection layer, 226... • Emitting layer, 227... Electron blocking layer, 228... Hole transport layer, 230... Hole injection layer, 232...second electrode, 234...third opening, 236...sealing layer, 23 7...Silicon carbon nitride film, 238...Silicon nitride film, 240...Disconnected region, 2 42...conductive particles, 244...resin, 246...flattening layer, 248...passi 250... Wire grid polarizer, 251... Light scattering layer, 252... Beads, 254... Adhesive ink, 256... Light-absorbing layer, 258... Fine metal wire, 2 60...Insulating layer, 262...Partition, 264...8th contact hole, 266... • First gate electrode, 268... Second gate electrode, 270... Second capacitance element, 272... Capacitive electrode, 274... Second capacitive element

Claims

1. The first transparent resin layer, the second transparent resin layer, the third transparent resin layer, and the fourth transparent resin layer are in this order. A laminated transparent resin substrate, A plurality of transparent resin layers are arranged between the first transparent resin layer and the second transparent resin layer and are extended in the first direction. The first sensor electrode and Displaced between the second transparent resin layer and the third transparent resin layer, intersecting in the first direction Multiple second sensor electrodes extending in a second direction, A shield disposed between the third transparent resin layer and the fourth transparent resin layer, including a first opening. Electrodes and, The first insulating layer on the fourth transparent resin layer, A second insulating layer on the first insulating layer, A third insulating layer on top of the aforementioned second insulating layer, A sealing layer covering the third insulating layer, A plurality of connection terminals between the first insulating layer and the second insulating layer, A drive circuit connected to the aforementioned plurality of connection terminals, It has, The plurality of first sensor electrodes and the plurality of connection terminals are separated by the first insulating layer and the fourth transparent A first contact hole penetrating the resin layer, the third transparent resin layer, and the second transparent resin layer. Connected via, The first contact hole is located inside the first opening, and the third insulating layer and It is covered with the aforementioned sealing layer, The plurality of connection terminals are arranged in areas exposed from the third insulating layer and the sealing layer. The shield electrode extends into a region that overlaps with the drive circuit. A display device with a touch sensor, characterized by the following features.

2. The first insulating layer and the second insulating layer have a plurality of lead wires, The plurality of second sensor electrodes and the plurality of lead wires are separated by the first insulating layer and the fourth A transparent resin layer is connected via a second contact hole that penetrates the third transparent resin layer. The second contact hole is positioned so as not to overlap with the shield electrode, 3. Covered by the insulating layer and the sealing layer, A display device with a touch sensor according to claim 1.

3. The transparent resin substrate has corners, and the corners have a rounded shape. A display device with a touch sensor according to claim 1.

4. The aforementioned drive circuit includes a scan signal line drive circuit block, a data signal line drive circuit block, and a touch Includes a chip and a fingerprint sensor detection circuit block, A display device with a touch sensor according to claim 1.

5. It has a display unit in which multiple pixels are arranged, The display unit includes a first electrode provided for each of the plurality of pixels, and across the plurality of pixels It includes a spreading second electrode and a light-emitting layer between the first electrode and the second electrode, The second electrode extends on the third insulating layer and is covered by the sealing layer. A display device with a touch sensor according to claim 1.

6. The display unit is provided with a plurality of data signal lines extending in the first direction, The display unit and the plurality of switching circuits between the plurality of connection terminals are included, Each of the above-mentioned multiple switching circuits connects to one connection terminal selected from the above-mentioned multiple connection terminals. , switching the connection with two or more data signal lines among the plurality of data signal lines, The plurality of switching circuits and the plurality of connection terminals are arranged along the second direction, The first contact hole is positioned between the plurality of connection terminals and the plurality of switching circuits. And so, The plurality of first sensor electrodes are sandwiched between the plurality of switching circuits and the first contact hole It extends into the territory of Ru. The touch sensor display device according to claim 5.

7. The plurality of switching circuits are arranged in pairs along the second direction, The plurality of first sensor electrodes are sandwiched between each of the two sets of the plurality of switching circuits and extend therein. Yes, Display device with touch sensor according to claim 6.

8. Each of the plurality of pixels includes a transistor connected to the first electrode and a capacitive element. , including, The transistor and the capacitance element are composed of an oxide semiconductor layer and a transparent conductive film. It is being The touch sensor display device according to claim 5.

9. A wire grid polarizer is disposed between the first electrode and the transparent resin substrate, Includes a light scattering layer disposed between the light-emitting layer and the second electrode. The touch sensor display device according to claim 8.

10. The shield electrode is interposed between the transistor and the plurality of second sensor electrodes. The wire grid polarizer is provided on one side of the shield electrode. The touch sensor display device according to claim 9.

11. The wire grid polarizer is provided between the transistor and the first electrode. 、 The touch sensor display device according to claim 9.

12. The wire grid polarizer has a light-absorbing layer on the transparent resin substrate side and a gold on the first electrode side. Including, The touch sensor display device according to claim 9.

13. Multiple pixels, multiple scanning signal lines extending in the second direction, and extending in the first direction A display unit including multiple data signal lines, The peripheral area outside the display unit, A scanning signal line driving circuit that outputs scanning signals to the plurality of scanning signal lines, It has a scan circuit that outputs a scan signal to a second sensor electrode, The scanning signal line drive circuit and the scan circuit are located on both sides of the display unit in the peripheral region. It is positioned and extends in the first direction, The scanning signal line drive circuit is positioned close to the display unit. The scan circuit is located outside the scan signal line drive circuit. A display device with a touch sensor according to claim 1.

Images