Light-emitting device

Abstract

To provide driving method for a semiconductor device capable of reducing variation in threshold voltage and variation of mobility of a transistor.SOLUTION: The semiconductor device includes a transistor and a capacitance element electrically connected to the gate of the transistor, in which variation in current flowing the transistor or variation in mobility of the transistor is reduced by discharging, once through the transistor, charge stored in the capacitance element according to a sum voltage of a voltage according to the threshold voltage of the transistor and a video signal voltage.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device or a method for driving the same. [Background technology]

[0002] In recent years, flat panel displays such as liquid crystal displays (LCDs) have become widely popular. However, LCDs have drawbacks such as a narrow viewing angle, a narrow color gamut, and a slow response time. It has various drawbacks, such as those listed above. Therefore, as a display that overcomes these drawbacks, Organic EL (also known as organic light-emitting diode, organic light-emitting diode, or OLED) Research into displays is actively being conducted (Patent Document 1).

[0003] However, OLED displays have a mechanism to control the current flowing through the OLED elements. There was a problem in that the current characteristics of the transistors varied from pixel to pixel. If the current flowing through the L element (i.e., the current flowing through the transistor) fluctuates, the organic EL element will be affected. The brightness of the child also varies, resulting in an uneven display screen. Therefore, the transistor's structure Methods for correcting variations in the voltage value are being investigated (Patent Documents 2 to 6).

[0004] However, even if the variation in the transistor threshold voltage is corrected, the transistor mobility is If there are variations, the current flowing through the organic EL element will also vary, resulting in image inconsistencies. Therefore, a method is being investigated to correct not only the threshold voltage of the transistor, but also the variation in its mobility. This has been discussed (Patent Documents 7 to 8). [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-216110 [Patent Document 2] Japanese Patent Application Laid-Open No. 2003-202833 [Patent Document 3] Japanese Patent Application Laid-Open No. 2005-31630 [Patent Document 4] Japanese Patent Application Laid-Open No. 2005-345722 [Patent Document 5] Japanese Patent Application Laid-Open No. 2007-148129 [Patent Document 6] International Publication No. WO2006 / 060902 Pamphlet [Patent Document 7] Japanese Patent Application Laid-Open No. 2007-148128 (paragraph

[0098] ) [Patent Document 8] Japanese Patent Application Laid-Open No. 2007-310311 (paragraph

[0026] ) [Summary of the Invention] [Problems to be Solved by the Invention]

[0006] However, in the technologies disclosed in Patent Documents 7 to 8, while inputting a video signal to pixels, correction of variations in the mobility of transistors is performed. Therefore, various problems occur.

[0007] For example, in order to correct variations in mobility while inputting a video signal, during that time, it is not possible to input the video signal to other pixels. Usually, when the number of pixels, frame frequency, or screen size, etc. are determined, the maximum value of the period for inputting the video signal to each pixel (so-called 1 gate selection period or 1 horizontal period) is also determined. Therefore, when the period for correcting variations in mobility increases during the 1 gate selection period, the periods for other processes (such as inputting the video signal and obtaining the threshold voltage) decrease. Therefore, in the pixel, various processes are performed during the 1 gate selection period. ​​​​ This would necessitate a delay, resulting in insufficient processing time and an inability to perform accurate processing. , or because it is not possible to secure a sufficient period for correcting for the variation in mobility The correction will be insufficient.

[0008] Furthermore, as the number of pixels or frame rate increases, or the screen size increases, one pixel The selection period per gate is getting shorter and shorter. Therefore, the input of video signals to pixels, This would make it impossible to adequately compensate for variations in mobility.

[0009] Alternatively, when correcting for variations in mobility while inputting a video signal, the variation in mobility The correction is susceptible to distortion of the video signal waveform. Therefore, the video signal waveform When the saturation is large, and when it is small, there will be variations in the degree of correction for mobility. Accurate correction is not possible.

[0010] Alternatively, when correcting for variations in mobility while inputting a video signal to a pixel, sequential point rotation is used. It is often difficult to perform motion. In point-sequential drive, the video signal is input to the pixels of a certain row. In this case, instead of inputting the video signal to all pixels in that row simultaneously, it is done one pixel at a time. The video signal is input. Therefore, the length of time the video signal is input is per pixel. It will be different. Therefore, when correcting for variations in movement while inputting a video signal, the picture Because the correction period for the variation in mobility differs for each element, the amount of correction also differs for each pixel. This prevents proper correction. Therefore, while inputting the video signal, moving... When correcting for variations in the degree of rotation, instead of sequential point-by-point driving, the signal should be transmitted to all pixels in that row simultaneously. It is necessary to perform sequential line driving by inputting numbers.

[0011] Furthermore, when performing line sequential driving, the source signal line drive circuit is different compared to when performing point sequential driving. The configuration of the video signal line driver circuit (also called the source driver or data driver) is complex. For example, a source signal line drive circuit in line sequential drive is a DA converter, analog bar Often, circuits such as buffers and latch circuits are required. However, analog buffers are... Often composed of operational amplifiers and source follower circuits, the current characteristics of transistors It is susceptible to variations. Therefore, using TFTs (thin film transistors) in circuits... When constructing this, a circuit is needed to compensate for variations in the current characteristics of the transistors, and the circuit The scale of the project becomes larger, and power consumption increases. Therefore, When TFTs are used as transistors in the pixel portion, the pixel portion and signal line driving It may become difficult to form the circuit on the same board. Therefore, the signal line drive cycle Creating the paths requires a different method than the pixel portion, which could increase costs. It has the property. Furthermore, the pixel portion and the signal line driving circuit are connected using COG (Chip-on-Glass). Alternatively, connections may need to be made using TAB (Tape Automated Bonding). This can lead to poor contact or compromise reliability.

[0012] Based on the above, a device or similar device that reduces the effect of variations in the threshold voltage of transistors. The objective is to provide a driving method for the transistor. Alternatively, the shadow of variations in transistor mobility. The objective is to provide a device or a method for driving the device that reduces resonance. The objective is to provide a device or a driving method that reduces the influence of variations in the current characteristics of the device. Alternatively, to provide a device or driving method that can ensure a longer input period for the video signal. The challenge is to reduce the effects of threshold voltage variations. The objective is to provide a device or a driving method that can ensure a long range of motion. A device or a drive method that can ensure a longer correction period to reduce the effects of variations. The challenge is to provide a device that is less susceptible to distortion of the video signal waveform. The objective is to provide a driving method for such a system. Alternatively, not only linear sequential driving, but also point-sequential driving. The objective is to provide a device or a method for driving that can also use a drive mechanism. The present invention provides an apparatus or driving method that can form pixels and driving circuits on the same substrate. The objective is to provide a device or a method for driving such a device with low power consumption. The objective is to provide a low-cost device or a low-cost method for driving it. Alternatively, a device or a driving method that is less likely to cause poor contact at the wiring connection points. The objective is to provide, or to provide a highly reliable device or a method for driving it. The challenges are to provide a device with a large number of pixels or a method for driving such a device. To do so. Or, to provide a device or driving method for a device with a high frame frequency. Alternatively, the objective is to provide a device with a large panel size or a method for driving such a device. In addition to these, we will use various means to provide a better device or a better method of driving it. The challenge is to address the following issues. [Means for solving the problem]

[0013] The device comprises a transistor and a capacitive element electrically connected to the gate of the transistor. The capacitive element holds a voltage according to the sum of the voltage corresponding to the threshold voltage of the zista and the video signal voltage. The charged energy is discharged once through the transistor, which allows the current to flow through the transistor. Reduces variations in [specific parameters] or variations in transistor mobility.

[0014] One exemplary aspect of the present invention is a transistor and a device electrically connected to the gate of the transistor. A method for driving a semiconductor device having a capacitive element, wherein the threshold voltage of the transistor The charge held in the capacitive element is released in accordance with the voltage of the sum of the corresponding voltage and the video signal voltage, This is a method for driving semiconductor devices that discharge electricity via a sta.

[0015] Another exemplary embodiment of the present invention is a semiconductor having a transistor, a display element, and wiring. A method for driving a device, wherein in a first period, the source or drain of a transistor Connect one side of the transistor to the gate, and the source or drain of the transistor. The other end and the wiring are made conductive, and one of the transistor's source or drain and the indicator element The two are made non-conductive, and during the second period, one of the transistor's source or drain The gate of the transistor is made non-conductive, and the source or drain of the transistor is also Connect one end to the wiring and make it conductive, and connect either the source or drain of the transistor to the display element. This is a method for driving a semiconductor device to achieve a conductive state.

[0016] Another exemplary embodiment of the present invention includes a transistor, a display element, a first wiring, and a second A method for driving a semiconductor device having wiring, wherein in a first period, the transistor By making one of the sources or drains of the transistor conduct to the gate, the transistor The source or drain of the transistor is connected to the first wiring, and the source or drain of the transistor is connected to the first wiring, and the source or This deconnects the other side of the drain and the second wiring, and the source or drain of the transistor One side of the transistor and the display element are made non-conductive, and in the second period, the source of the transistor Alternatively, one of the drains and the gate of the transistor are made non-conductive, and the source of the transistor Alternatively, connect the other side of the drain to the first wiring and connect the source or drain of the transistor. The other side of the input and the second wiring are made non-conductive, and one of the transistor's source or drain This is a method for driving a semiconductor device that creates an electrical connection between a terminal and a display element.

[0017] Another exemplary aspect of the present invention is a transistor and an electrically connected to the gate of the transistor. A method for driving a semiconductor device having a connected capacitive element, wherein in a first period, The element maintains a voltage that is the sum of the voltage corresponding to the transistor's threshold voltage and the video signal voltage. During the second period, the charge held in the capacitive element in accordance with the voltage during the first period This is a method for driving a semiconductor device that discharges electricity via a transistor.

[0018] Another exemplary aspect of the present invention is a transistor and an electrically connected to the gate of the transistor. A method for driving a semiconductor device having a connected capacitive element and a display element, wherein the first period In this configuration, the capacitive element has a voltage corresponding to the threshold voltage of the transistor and a voltage corresponding to the video signal voltage. The sum of the voltages is maintained, and in the second period, in the first period, the capacitive elements are held according to the voltage. The charged energy is discharged through the transistor, and in the third period, through the transistor This is a method for driving a semiconductor device in which current is supplied to a display element.

[0019] Another exemplary aspect of the present invention is a transistor and an electrically connected to the gate of the transistor. A method for driving a semiconductor device having a connected capacitive element, wherein in a first period, The quantity element holds the first voltage, and the source or drain of the transistor and the indicator element It is in a non-conducting state, and during the second period, the capacitive element holds the second voltage, and the transistor The source or drain of the terminal is in a conductive state with respect to the indicator element, and the first voltage is the second voltage This is a method for driving semiconductor devices with a voltage greater than the device's current output.

[0020] Another exemplary embodiment of the present invention includes a transistor, a first wiring, and a transistor saw A first switch that controls continuity or non-continuity with either the spool or the drain, and a second wiring and a second that controls the conduction or non-conductivity between the source or drain of the transistor. The switch, the other side of the transistor's source or drain, and the gate of the transistor A third switch that controls conduction or non-conductivity, and the source or drain of the transistor On the other hand, a semiconductor device having a fourth switch that controls conductivity or non-conductivity with a display element. A method for driving a device, wherein during a first period, the first switch and the third switch are electrically connected. The state, and the second and fourth switches are de-conducted, during the second period , the first switch and the fourth switch are in a conductive state, and the second switch and the third switch This is a method for driving a semiconductor device that puts a switch into a non-conductive state.

[0021] Another exemplary embodiment of the present invention includes a transistor, a first wiring, and a transistor saw A first switch that controls continuity or non-continuity with either the spool or the drain, and a second wiring and a second that controls the conduction or non-conductivity between the source or drain of the transistor. The switch, the other side of the transistor's source or drain, and the gate of the transistor A third switch that controls conduction or non-conductivity, and the source or drain of the transistor On the other hand, a semiconductor device having a fourth switch that controls conductivity or non-conductivity with a display element. A method for driving a device, wherein during a first period, the second switch and the third switch are connected The state, and the first and fourth switches are in a non-conductive state, during the second period , the first switch and the third switch are in a conductive state, and the second switch and the fourth switch are in a conductive state. The switch is de-conducted, and during the third period, the first switch and the fourth switch are made conductive. The state, and the driving method of the semiconductor device that puts the second switch and the third switch into a non-conductive state. It is the law.

[0022] Note that various types of switches can be used. For example, electrical switches These include switches and mechanical switches. In other words, anything that can control the flow of electric current will work. It is not limited to specific things. For example, a transistor (e.g., bipod) can be used as a switch. (e.g., transistors, MOS transistors), diodes (e.g., PN diodes), PIN diode, Schottky diode, MIM (Metal Insulator) Metal diode, MIS (Metal Insulator Semiconductor) It is possible to use ductors (diodes, diode-connected transistors, etc.) It comes. Alternatively, a logic circuit combining these can be used as a switch.

[0023] Examples of mechanical switches include digital micromirror devices (DMDs). Switches using MEMS (Micro-Electro-Mechanical Systems) technology are available. The switch has electrodes that can be moved mechanically, and the movement of these electrodes It operates by controlling the connection and disconnection.

[0024] When a transistor is used as a switch, that transistor is not simply a switch. Because it operates in this manner, the polarity (conductivity type) of the transistor is not particularly limited. However, the off-current To suppress this, it is desirable to use a transistor with the polarity that has a lower off-current. Examples of transistors with low current flow include transistors with an LDD region and multi-gate transistors. There are transistors with a structure, or transistors that operate as switches. The source terminal operates at a potential close to the potential of the low-potential power supply (Vss, GND, 0V, etc.). In such cases, it is desirable to use an N-channel transistor. Conversely, the power of the source terminal If the position is close to the potential of the high-potential side power supply (such as Vdd), then a P-channel transistor is used. It is preferable to use a zista. This is because in an N-channel transistor, the source terminal is When operating at a potential close to that of the low-voltage power supply, the source terminal of a P-channel transistor... When it operates at a potential close to that of the high-potential power supply, the absolute value of the voltage between the gate and source increases. Because it can be controlled, it can operate more accurately as a switch. Furthermore, because transistors rarely operate as source followers, the output voltage is large. This is because the difference is less likely to become smaller.

[0025] Furthermore, using both N-channel and P-channel transistors, CMO An S-type switch may be used as the switch. If a CMOS-type switch is used, a P-type switch will be used. Either a N-channel transistor or an N-type transistor is used to conduct electricity. When current flows through it, it becomes easier to function as a switch. For example, when switching on It can output the appropriate voltage regardless of whether the power signal voltage is high or low. Furthermore, it is possible to reduce the voltage amplitude value of the signal used to turn the switch on or off. Therefore, it is also possible to reduce power consumption.

[0026] When using a transistor as a switch, the switch is connected to the input terminal (source terminal). (or one of the drain terminals) and the output terminal (the other of the source terminal or drain terminal), It has a terminal (gate terminal) that controls conductivity. On the other hand, a diode is used as a switch. When used, the switch may not have terminals to control conductivity. Therefore, Using a diode as a switch instead of a transistor eliminates the need for wiring to control the terminals. It can be reduced.

[0027] Furthermore, when explicitly stating that A and B are connected, it means that A and B are electrically connected. When they are connected, when A and B are functionally connected, and when A and B are directly connected This includes cases where the object is present. Here, A and B are the object (for example, a device, an element, a rotation). (Let it be a path, wiring, electrode, terminal, conductive film, layer, etc.) Therefore, a predetermined connection relationship For example, not limited to the connection relationships shown in the diagram or text, but the connections shown in the diagram or text This includes things other than relationships.

[0028] For example, if A and B are electrically connected, the electrical connection between A and B is possible. Elements that perform this function (for example, switches, transistors, capacitive elements, inductors, resistive elements, etc.) One or more ions (such as ions) may be connected between A and B. Alternatively, A and B and As an example of a functionally connected system, a circuit that enables a functional connection between A and B (for example) For example, logic circuits (inverters, NAND gates, NOR gates, etc.) and signal conversion circuits (DA conversion). Circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boost circuits) (Step-down circuits, etc.), level shifter circuits that change the potential level of a signal, etc.), voltage sources, current sources Switching circuits, amplification circuits (circuits that can increase signal amplitude or current, etc., operational amplifiers) (Differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, One or more control circuits (such as) may be connected between A and B. For example, between A and B Even if another circuit is in between, if the signal output from A is transmitted to B, then A and B and They are assumed to be functionally connected.

[0029] Furthermore, if it is explicitly stated that A and B are electrically connected, then A and B are electrically connected. When connected electrically (that is, when another element or circuit is placed between A and B) (when they are separated) and when A and B are functionally connected (that is, when there is no separate connection between A and B) (When they are functionally connected with a circuit in between) and when A and B are directly connected ( In other words, this includes cases where A and B are connected without any other element or circuit in between. In other words, if you explicitly state that they are electrically connected, then simply state that they are connected. This is equivalent to the case where it is explicitly stated only that it is included.

[0030] Furthermore, a display element, a display device having a display element, a light-emitting element, and a device having a light-emitting element A light-emitting device can take on various forms and contain various elements. For example For example, as a display element, display device, light-emitting element, or light-emitting device, EL (electroluminescent) EL elements (including organic and inorganic EL elements, organic EL elements, inorganic EL elements), LE D (white LED, red LED, green LED, blue LED, etc.), transistor (current-dependent) Transistors that emit light, electron-emitting elements, liquid crystal elements, electronic inks, electrophoretic elements, etc. Rating Light Bulb (GLV), Plasma Display (PDP), Digital Microwave Chromiller devices (DMDs), piezoelectric ceramic displays, carbon nanotubes, Displays where contrast, brightness, reflectance, transmittance, etc., change due to electromagnetic effects. It can have a medium. An EL display is an example of a display device using an EL element. As for display devices using electron emission elements, field emission displays (FEDs) are examples. ) and SED type flat-panel displays (SED: Surface-conduction Display devices using liquid crystal elements, such as electron-emitter displays. Examples include liquid crystal displays (transmissive liquid crystal displays, semi-transmissive liquid crystal displays, reflective liquid crystal displays). LCD displays, direct-view LCD displays, projection LCD displays, electronic ink Electronic paper is an example of a display device that uses electrophoretic elements.

[0031] An EL element is defined as having an anode, a cathode, and an EL layer sandwiched between the anode and cathode. It is a device. The EL layer utilizes light emission (fluorescence) from singlet excitons. This method utilizes emission from triplet excitons (phosphorescence), and also utilizes emission from singlet excitons (fluorescence). This includes those that use and those that utilize the emission (phosphorescence) from triplet excitons, and organic materials. Things formed by inorganic matter, things formed by organic matter Materials formed from inorganic substances, polymer materials, low molecular weight materials, polymer materials It may contain materials and low-molecular-weight materials, etc. However, it is not limited to this, It can have a variety of elements as an EL element.

[0032] Furthermore, various types of transistors can be used as transistors. There are no restrictions on the type of transistor used. For example, amorphous silicon, polycrystalline silicon, Microcrystalline silicon (also called nanocrystal or semi-amorphous silicon) This involves using thin-film transistors (TFTs) that have non-single-crystal semiconductor films, such as those shown above. This is possible. There are various advantages to using TFTs. For example, in the case of single-crystal silicon... Because it can be manufactured at a lower temperature, it can reduce manufacturing costs or allow for the use of larger manufacturing equipment. This allows for larger manufacturing equipment, enabling production on larger substrates. Therefore, multiple processes can be carried out simultaneously. Because a large number of display devices can be manufactured, it can be produced at a low cost. Furthermore, the manufacturing temperature is low. Therefore, substrates with poor heat resistance can be used. It is possible to manufacture transistors. And, using transistors on a light-transmitting substrate, a display element can be created. It is possible to control the transmission of light in this. Alternatively, because the film thickness of the transistor is thin, A portion of the film that makes up the radiator can transmit light. Therefore, the aperture ratio is improved. It can be made to happen.

[0033] Furthermore, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), Further improvement in crystallinity makes it possible to manufacture transistors with superior electrical properties. As a result, gate driver circuits (scan line driving circuits) and source driver circuits (signal line driving circuits) ), and integrated signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) on the circuit board. It can be formed.

[0034] Furthermore, when manufacturing microcrystalline silicon, by using a catalyst (such as nickel), This further improves crystallinity, making it possible to manufacture transistors with superior electrical properties. In this case, crystallinity can be improved simply by applying heat treatment without laser irradiation. This is also possible. As a result, gate driver circuits (scan line driving circuits) and source driver circuits A part of it (such as an analog switch) can be integrally formed on the circuit board. Furthermore, crystallization If laser irradiation is not performed, the unevenness of silicon crystallinity can be suppressed. Therefore, it is possible to display images with improved image quality.

[0035] However, it is possible to manufacture polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel). It is possible to do so.

[0036] Furthermore, improving the crystallinity of silicon to polycrystalline or microcrystalline forms is possible for the entire panel. It is preferable to perform this with the body, but it is not limited to that. The crystallinity of the ricon may be improved. Selectively improving crystallinity is done by using laser light. This is possible by selectively irradiating the area. For example, the peripheral circuit area, which is an area other than the pixel. Laser light may be irradiated only to the area. Alternatively, a gate driver circuit or source driver may be used. The laser light may be irradiated only to the area of ​​the circuit, etc. Alternatively, one of the source driver circuits The laser light may be irradiated only to the area of ​​the part (for example, the analog switch). By improving silicon crystallization only in areas where the circuit needs to operate at high speed, Yes, it is possible. Since the pixel region does not require high-speed operation, even if the crystallinity is not improved, The pixel circuit can be operated without any problems. The area requiring improvement in crystallinity is smaller. Therefore, the manufacturing process can be shortened, throughput can be improved, and manufacturing costs can be reduced. This allows for the production of a product with fewer manufacturing devices, thus reducing manufacturing costs. It is possible to make it happen.

[0037] Alternatively, transistors can be formed using semiconductor substrates or SOI substrates. These features allow for the manufacture of transistors with high current supply capability and small size. These transistors can be used to reduce the power consumption of circuits or to increase the integration of circuits. It is possible.

[0038] Alternatively, ZnO, α-InGaZnO, SiGe, GaAs, IZO, ITO, SnO Transistors having compound semiconductors or oxide semiconductors such as these, and furthermore, these compounds Thin-film transistors, such as those made by thinning a material semiconductor or an oxide semiconductor, can be used. These factors allow for lower manufacturing temperatures, making it possible, for example, to manufacture transistors at room temperature. As a result, the heat-resistant substrates, such as plastic substrates and film substrates, can be directly treated. Lampistors can be formed. Furthermore, these compound semiconductors or oxide semiconductors It can be used not only in the channel portion of a transistor, but also in other applications. For example, these compound semiconductors or oxide semiconductors can be used as resistive elements, pixel electrodes, and light-transmitting elements. They can be used as electrodes. Furthermore, they can be used to form films or simultaneously with transistors. Because it can be formed in this way, costs can be reduced.

[0039] Alternatively, transistors formed using inkjet or printing methods can be used. These will allow for manufacturing at room temperature, at low vacuum levels, or on large substrates. It can be manufactured without using a mask (reticle), so transistors can be produced. The layout can be easily changed. Furthermore, there is no need to use a register. This reduces material costs and the number of processes. Furthermore, because the film is applied only to the necessary parts, This method, which involves etching after depositing a film over the entire surface, is less wasteful of material and lowers costs. It can be done.

[0040] Alternatively, transistors containing organic semiconductors or carbon nanotubes can be used. This allows transistors to be formed on a flexible substrate. Semiconductor devices using such substrates can be made more resistant to impact.

[0041] Furthermore, transistors can be formed using various substrates. The types of substrates are particularly... It is not limited to a specific type. Examples of substrates include single crystal substrates and SOI substrates. Glass substrates, quartz substrates, plastic substrates, stainless steel substrates, stainless steel A substrate with a chill foil can be used. Alternatively, a transistor can be used with a certain substrate. A transistor is formed, then the transistor is transposed onto another substrate, and then the transistor is placed on another substrate. The following may be placed on the substrate on which the transistor is transposed: a single crystal substrate, an SOI substrate, Glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates Boards, fabric substrates (natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) (Includes) or regenerated fibers (acetate, cupro, rayon, recycled polyester), etc. (Mu), leather substrate, rubber substrate, stainless steel substrate, stainless steel foil A substrate such as can be used. Alternatively, the skin (epidermis, dermis) of an animal such as a human or Subcutaneous tissue may be used as a substrate. Alternatively, a transistor may be formed using a certain substrate. The substrate may be polished to make it thinner. Examples of substrates that can be polished include single-crystal substrates and SOI substrates. Glass substrates, quartz substrates, plastic substrates, stainless steel substrates, stainless steel Substrates with chill foil can be used. Formation of transistors with good characteristics, formation of transistors with low power consumption, and durable components. It is possible to manufacture the device, provide heat resistance, reduce weight, or make it thinner.

[0042] Furthermore, transistor configurations can take various forms and are not limited to a specific configuration. For example, a multi-gate structure with two or more gate electrodes can be applied. In a gate structure, the channel regions are connected in series, so multiple transistors are connected in series. This configuration is connected to the above. The multi-gate structure reduces off-current and improves the transistor's durability. Pressure can be improved (reliability can be improved). Alternatively, a multi-gate structure can be used to increase saturation. When operating in the region, even if the drain-source voltage changes, the drain-source current remains constant. It can be achieved by keeping the voltage-current characteristics relatively flat and minimizing changes. By utilizing the characteristic of having a flat slope in the current characteristics, an ideal current source circuit or a very high resistance can be created. This makes it possible to realize an active load with resistance. As a result, a differential circuit or current with good characteristics can be created. A mirror circuit can be implemented.

[0043] As another example, a structure can be applied in which gate electrodes are positioned above and below the channel. By arranging gate electrodes above and below the channel, the channel region As this increases, the current value can be increased. Alternatively, gate electrodes can be placed above and below the channel. By arranging the structure in such a way, a depletion layer is more likely to form, thus improving the S value. This can be achieved by arranging gate electrodes above and below the channel. This results in a configuration where multiple transistors are connected in parallel.

[0044] Structures where the gate electrode is positioned above the channel region, and structures where the gate electrode is positioned below the channel region. Structures in which elements are arranged, positive staggered structure, inverse staggered structure, and channel regions divided into multiple regions A structure in which channel regions are connected in parallel, or a configuration in which channel regions are connected in series. This can also be applied. Furthermore, source electrodes and drain electrodes can be placed in the channel region (or a part thereof). Structures where these overlap can also be applied. The source electrode or other components can be placed in the channel region (or a part thereof). By creating a structure where the rain electrodes overlap, charge accumulates in a part of the channel region. This can prevent the system from becoming even more unstable. Alternatively, a structure with an LDD area can be created. Applicable. By providing an LDD region, the off-current can be reduced, or the transistor's breakdown voltage can be increased. Improvements (reliability improvements) can be achieved. Alternatively, by establishing an LDD area, When operating in the saturation region, even if the drain-source voltage changes, the drain-source voltage remains constant. The current does not change much, and the slope of the voltage-current characteristic can be made flat.

[0045] Furthermore, various types of transistors can be used, and they can be formed using various substrates. Therefore, all the circuits necessary to realize a given function can be the same. It is also possible to form it on a single substrate. For example, the number of times required to achieve a predetermined function All of the substrates are various types, such as glass substrates, plastic substrates, single crystal substrates, or SOI substrates. It is also possible to form it using a substrate. The circuit necessary to realize the predetermined function Because everything is formed using the same circuit board, the number of components is reduced, resulting in lower costs. Alternatively, reliability can be improved by reducing the number of connection points with circuit components. A portion of the circuit necessary to achieve a predetermined function is formed on a certain substrate, and the predetermined function It is also possible that another part of the circuitry necessary to achieve this is formed on a separate circuit board. In other words, all the circuits necessary to achieve a given function are formed using the same circuit board. It is not necessary. For example, part of the circuit necessary to achieve a certain function is made of glass. Another circuit formed on the substrate by transistors and necessary to realize a predetermined function Some are formed on single-crystal substrates and consist of transistors formed using single-crystal substrates. The IC chip is connected to the glass substrate using COG (Chip On Glass), and the glass It is also possible to place the IC chip on the circuit board. Alternatively, the IC chip can be placed on a TA (Time Attack) Using B (Tape Automated Bonding) or printed circuit boards, glass substrate It is also possible to connect it to a board. In this way, part of the circuit is formed on the same board. This reduces costs by reducing the number of components, or by reducing the number of connections to circuit components. Reliability can be improved. Alternatively, the drive voltage and drive frequency can be high. Because certain circuits consume a lot of power, those circuits are placed on the same circuit board. Instead of forming it, for example, form the circuit in that area on a single crystal substrate, and then use that circuit By using a pre-configured IC chip, an increase in power consumption can be prevented.

[0046] A transistor is defined as having at least three terminals, including a gate, a drain, and a source. It is an element having a drain region and a channel region between the drain region and the source region, Current can be passed through the rain region, channel region, and source region. Here, The terms "sow" and "drain" vary depending on the transistor's structure and operating conditions, so which one is the drain? It is difficult to determine whether it is a source or a drain. Therefore, source and drain The area that functions as a source or drain is sometimes not called a source or drain. In that case, for example... In some cases, these are referred to as the first terminal and the second terminal, respectively. Alternatively, they can be referred to as They are sometimes referred to as the first electrode and the second electrode. Alternatively, they may be referred to as the first region and the second region. There is a match.

[0047] Note that semiconductor devices include semiconductor elements (transistors, diodes, thyristors, etc.). This refers to a device that has a circuit. Furthermore, it refers to a device that can function by utilizing semiconductor properties. The term "semiconductor device" can be used to refer to all such devices. Alternatively, a semiconductor device can refer to any device that contains semiconductor materials. That's what they say.

[0048] A display device is a device that has a display element. It may contain multiple pixels, including children. Note that the display device drives the multiple pixels. It may also include an edge drive circuit. Note that a peripheral drive circuit that drives multiple pixels may include multiple The pixels may be formed on the same substrate. Note that the display device may be formed using wire bonding or bump bonding. Peripheral drive circuits placed on the substrate, also known as chip-on-glass (COG), are constructed using methods such as those described above. It is acceptable to include IC chips connected via a cable, or IC chips connected via a TAB, etc. The display device consists of IC chips, resistors, capacitives, inductors, transistors, etc. It may include a flexible printed circuit (FPC) with a component attached. The display device is connected via a flexible printed circuit (FPC), etc., and the IC chip Printed circuit boards with components such as resistors, capacitors, inductors, and transistors attached. It may also include a wire substrate (PWB). Furthermore, the display device may include a polarizing plate or a phase difference plate, etc. It may also include an optical sheet. The display device includes a lighting device, a housing, an audio input / output device, It may include a light sensor, etc.

[0049] Furthermore, if B is formed on top of A, or if B is formed on top of A, When describing this, it is not limited to the case that B is formed in direct contact with A. This also includes cases where this does not occur, i.e., when another object is intervening between A and B. Here, A and B are objects (for example, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers). (etc.)

[0050] Therefore, for example, explicitly stating that layer B is formed on top of layer A (or on top of layer A) If described, this applies to cases where layer B is formed in direct contact with layer A, and where layer A is formed on top of layer B. Another layer (such as layer C or layer D) is formed in direct contact with it, and layer B is formed in direct contact with it on top of that. This includes cases where a layer is formed. Note that other layers (e.g., layer C or layer D) are: It can be single-layered or multi-layered.

[0051] Furthermore, the same applies when it is explicitly stated that B is formed above A. It is not limited to B being in direct contact with A, but rather there may be another object between A and B. This includes cases where intervening layers are present. For example, if layer B is formed above layer A, In this case, there are two possibilities: when layer B is formed in direct contact with layer A, and when layer B is formed in direct contact with layer A. Then another layer (for example, layer C or layer D) is formed, and layer B is formed directly in contact with it. This includes cases where it is a single layer. Note that other layers (for example, layer C or layer D) may also be single layers. That's fine, and multiple layers are also acceptable.

[0052] Furthermore, it is not explicitly stated that B is formed on top of A, or that B is formed above A. When including this, the case where B is formed diagonally upwards should also be included.

[0053] The same applies when B is below A, or when B is below A.

[0054] Furthermore, it is preferable that terms explicitly stated as singular remain singular. However, this is not limited to this, and there can be multiple. Similarly, explicitly as plural It is preferable that there be multiple items listed. However, this is not limited to this. It can also be singular.

[0055] Note that in the diagram, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0056] Note that the figure is a schematic representation of an ideal example and is not limited to the shapes or values ​​shown in the figure. It cannot be fixed. For example, variations in shape due to manufacturing technology, variations in shape due to errors, noise Variations in signals, voltages, or currents, or signals, voltages, due to timing differences. Alternatively, it may include variations in current, etc.

[0057] Note that technical terms may be used to describe specific embodiments or examples. Many, but not limited to, this applies.

[0058] Furthermore, terms that are not defined (including scientific and technical terms such as specialized or academic terms) are generally... It can be used with the same meaning as the general meaning understood by those who are normally skilled in the art. (Dictionaries, etc.) The terminology defined therein should be interpreted in a way that is consistent with the context of the related technology. It is preferable.

[0059] Note that terms such as "1st," "2nd," and "3rd" refer to various elements, components, areas, layers, and regions that are separate from each other. It is used to distinguish and describe things. Therefore, terms such as "first," "second," and "third" refer to elements and parts. It does not limit the number of materials, areas, layers, zones, etc. Furthermore, for example, "the first" It can be replaced with "second" or "third," etc. [Effects of the Invention]

[0060] This can reduce the effects of variations in the transistor threshold voltage. This can reduce the effects of variations in the zista's mobility. Alternatively, it can reduce the transistor's current. This can reduce the impact of variations in characteristics, or it can extend the input period of the video signal. It is possible to do so. Alternatively, a correction period can be set to reduce the effects of threshold voltage variations. It can be secured for a longer period. Or, it can be used as a correction period to reduce the effects of variability in mobility. This allows for longer periods of time to be maintained. Alternatively, it reduces the impact of distortion in the video signal waveform. This is possible. Alternatively, point-sequential driving can be used in addition to line-sequential driving. This allows the pixels and driving circuit to be formed on the same substrate. Alternatively, it allows for lower power consumption. It is possible to do so. Or, the cost can be reduced. Or, the connection of the wiring connection part Poor tactile feedback can be reduced. Or, reliability can be increased. Or, pixels The number can be increased. Or, the frame frequency can be increased. Or, The panel size can be increased. [Brief explanation of the drawing]

[0061] [Figure 1] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 2] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 3] A diagram illustrating the operation shown in the embodiment. [Figure 4] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 5] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 6]A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 7] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 8] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 9] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 10] A diagram illustrating the circuit or driving method shown in the embodiment. [Figure 11] A cross-sectional view illustrating the transistor shown in the embodiment. [Figure 12] A diagram illustrating the electronic device shown in the embodiment. [Figure 13] A diagram illustrating the electronic device shown in the embodiment. [Modes for carrying out the invention]

[0062] Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is largely... It is possible to carry out the invention in different ways, without departing from the spirit and scope of the present invention. It is easily understood by those skilled in the art that its form and details can be changed in various ways. This embodiment is not to be interpreted as being limited to the contents described below. In the structure of the invention, reference numerals indicating similar components are shown using common numerals across different drawings. Detailed descriptions of identical or similarly functioning parts are omitted.

[0063] Furthermore, in the following, we will describe each embodiment using various diagrams. In one embodiment, the contents described in each figure (or even just a part of the contents) are shown in another figure. Apply, combine, or replace the content described therein (even if only a part of it). It can be done freely. Similarly, the content described in each figure of one or more embodiments (Partial content is also acceptable) is the content described in the diagram of one or more other embodiments (partial content) You can freely apply, combine, or substitute the content (or other relevant information). ru.

[0064] (Embodiment 1) Figure 1 shows a driving method for correcting variations in current characteristics such as transistor mobility. An example of the timing and circuit configuration at that time is shown below.

[0065] Figure 1(a) shows the period in which variations in current characteristics such as the mobility of transistor 101 are corrected. The circuit configuration in between is shown. Note that the circuit configuration shown in Figure 1(a) is the transition of transistor 101. To compensate for variations in current characteristics such as kinetics, the transistor gate is held This is a circuit configuration for discharging electric charge, and in practice, it involves multiple switches placed between the wires. The connection relationships of the circuit configuration are achieved by controlling whether the circuit is on or off.

[0066] In Figure 1(a), the source (or drain, first terminal, first) of transistor 101 The electrodes of transistor 101 are in contact with wiring 103. The second terminal (second electrode) is in conductivity with the gate of transistor 101. The first terminal (or first electrode) of element 102 is in contact with the gate of transistor 101. The capacitive element 102's second terminal (or second electrode) is in a conductive state with the wiring 103. It is located there.

[0067] The first terminal (or first electrode) of the display element 105 is connected to the drain of the transistor 101. Or the source (second terminal, second electrode) is in a non-conductive state. Transistor 101 Terminals, wiring, or electrodes other than the drain (or source, second terminal, second electrode), and table It is desirable that the first terminal (or first electrode) of the indicator element 105 be in a non-conductive state. However, it is not limited to this. The second terminal (or second electrode) of the display element 105 is connected to wiring 1 It is desirable, but not limited to, that 06 be in a conductive state.

[0068] Wiring 104 is connected to the drain (or source, second terminal, second electrode) of transistor 101. ) and are in a non-conductive state. Furthermore, the wiring 104 is connected to the first terminal of the capacitive element 102 (or The first electrode is in a non-conductive state. Note that the wiring 104 is as shown in Figure 1(a). The drain (or source, second terminal, second electrode) of the transistor 101 and the capacitive element 10 All terminals, wiring, or electrodes other than the first terminal (or first electrode) of 2 are in a non-conductive state. It is desirable to do so, but it is not limited to this.

[0069] Furthermore, via wiring 104, the video signal is transmitted to transistor 101 or capacitive element 102. A predetermined voltage may be supplied to it. Therefore, wiring 104 is the source signal line, video These are sometimes called signal lines, or video signal lines.

[0070] Note that before the connection configuration shown in Figure 1(a) is reached, that is, the mobility of transistor 101, etc. Before correcting for variations in the current characteristics, the capacitance element 102 is connected to the transistor 101. It is desirable that a voltage corresponding to the key value voltage is maintained. And the video signal (video signal It is desirable that the (number) is input to the capacitive element 102 via wiring 104. The capacitive element 102 receives a voltage and video signal corresponding to the threshold voltage of the transistor 101. It is desirable that the sum of the voltages be maintained. Therefore, in the state before Figure 1(a) In other words, before correcting for variations in current characteristics such as the mobility of transistor 101 The wiring 104 is connected to the drain, source, and gate of transistor 101 and the capacitive element 102. At least one of the following: the first terminal (or first electrode), the second terminal (or second electrode), etc. It is desirable that both are in a conductive state and that the video signal input operation is already in progress.

[0071] Furthermore, the capacitive element 102 controls the voltage corresponding to the threshold voltage of the transistor 101 and It is desirable, but not limited to, that the sum of the video signal voltages be maintained. Element 102 does not retain a voltage corresponding to the threshold voltage of transistor 101. It is also possible for only the video signal voltage to be retained.

[0072] Furthermore, when the voltage is maintained by the capacitive element 102, switching noise etc. There is a possibility of slight voltage fluctuations. However, this should not affect actual operation. However, a slight deviation is not a problem. Therefore, for example, the threshold of transistor 101 When a voltage equal to the sum of the voltage corresponding to the voltage and the video signal voltage is input to the capacitive element 102, The voltage held in the capacitive element 102 does not perfectly match the input voltage. However, due to the influence of noise and other factors, there may be slight differences. However, this does not affect the actual operation. As long as it doesn't affect the sound, a slight deviation is not a problem.

[0073] Next, in Figure 1(b), current is supplied to the display element 105 via the transistor 101. The circuit configuration during the period is shown. Note that the circuit configuration shown in Figure 1(b) is a transistor This is a circuit configuration for supplying current from the terminal 101 to the display element 105, and in practice, between the wires The connection relationships of the circuit configuration are controlled by switching the on or off of multiple switches provided. It will be realized.

[0074] The source (or drain, first terminal, first electrode) of transistor 101 is connected to wiring 10 It is in a conductive state with 3. Drain (or source, second terminal, second) of transistor 101 The electrode of the display element 105 is in electrical contact with the first terminal (or first electrode). The drain (or source, second terminal, second electrode) of transistor 101 is connected to the transistor. The gate of 101 is in a non-conductive state. The first terminal (or first electrode) of the capacitive element 102. It is in a conductive state with the gate of transistor 101. The second terminal of capacitive element 102 (also The second electrode (is) is in electrical contact with the wiring 103. The second terminal of the display element 105 (or The second electrode is in electrical contact with wiring 106.

[0075] Wiring 104 is connected to the drain (or source, second terminal, second electrode) of transistor 101. ) and are in a non-conductive state. Furthermore, the wiring 104 is connected to the first terminal of the capacitive element 102 (or The first electrode is in a non-conductive state. Note that the wiring 104 is as shown in Figure 1(b). The drain (or source, second terminal, second electrode) of the transistor 101 and the capacitive element 10 All terminals, wiring, or electrodes other than the first terminal (or first electrode) of 2 are in a non-conductive state. It is desirable to do so, but it is not limited to this.

[0076] In other words, this is the period during which variations in current characteristics such as the mobility of transistor 101 are corrected (Figure From 1(a), current is supplied to the display element 105 via transistor 101. When transitioning to period (Figure 1(b)), at least the drain of transistor 101 ( The conductivity between the source (second terminal, second electrode) and the gate of transistor 101 and , the drain (or source, second terminal, second electrode) of transistor 101 and the display element The conductivity state with the first terminal (or first electrode) of 105 will change, It is not limited to this, and the conductivity of other parts can also change. And, as mentioned above, conductivity Elements such as switches, transistors, or diodes are arranged to control the state. This is desirable. Then, the conductivity state is controlled using the element, as shown in Figures 1(a) and 1(b). A circuit configuration that achieves the connection status shown in Figure 1(a) and Figure If a connection configuration like 1(b) can be achieved, then a switch, transistor or diode Elements such as D can be freely arranged, and their number and connection structure are not limited.

[0077] As an example, as shown in Figure 2(a), the first terminal of switch 201 is connected to transistor 1 Connect the gate of 01 electrically, and the second terminal to the drain of transistor 101 (or socket). The first terminal of switch 202 is electrically connected to the second terminal and the second electrode. Connect the terminal to the drain (or source, second terminal, second electrode) of transistor 101 and the electrical The two switches are connected, and the second terminal is electrically connected to the display element 105. By arranging the switches, a circuit configuration can be created that achieves the connection configurations shown in Figures 1(a) and 1(b). It is possible to achieve success.

[0078] Figures 2(b) and 2(c) show examples different from those in Figure 2(a). In Figure 2(b), The position of switch 202 was changed to the position of switch 205 in Figure 2(b). In Figure 2(c), switch 202 from Figure 2(a) has been removed. Instead, for example, By changing the potential of the wiring 106, the display element 105 becomes non-conductive, as shown in Figure 1. (a) Similar operation can be achieved. Furthermore, switches and transistors If necessary, they will be placed as appropriate.

[0079] It is stated that A is in a conductive state with B, but in that case, there are various connections between A and B. It is possible for such elements to be connected. For example, resistors, capacitive elements, transistors. The fact that diodes, etc., are connected between A and B in series or parallel is confirmed. It is possible. Similarly, it is stated that A is in a non-conductive state with B, in which case A and B Various elements can be connected between them. A and B are non-conductive. As long as that is all that's needed, it's possible for various elements to be connected in other parts. Yes, for example, elements such as resistors, capacitors, transistors, and diodes are connected in series. Alternatively, they can be connected in parallel.

[0080] Therefore, for example, the circuit when switch 203 is added to the circuit in Figure 2(a) Figure 2(d) shows the circuit with switch 204 added, and Figure 2(e) shows the circuit with switch 206 added. The circuit with the addition of is shown in Figure 2(f).

[0081] In this way, the period during which variations in current characteristics such as the mobility of transistor 101 are corrected. In Figure 1(a), variations in current characteristics such as the mobility of transistor 101 are reduced. Therefore, during the period when current is supplied to the display element 105 (Figure 1(b)), the display The variation in the current supplied to element 105 is also reduced. As a result, the display of the display element 105 Variations in condition are reduced, allowing for high-quality displays.

[0082] The circuit configuration shown in Figures 2(a) to 2(f) described above corresponds to Figures 1(a) and 1(b) above. This is shown as an example of realizing the circuit configuration shown in Figure 2(a). In addition to the multiple switches shown in Figure 2(f), there are multiple switches installed between the wires that can be turned ON. Alternatively, the connection relationship of the circuit configuration is achieved by controlling the OFF state.

[0083] Note that the period during which current is supplied to the display element 105 (Figure 1(b)) is when transistor 10 It appears immediately after the period in which variations in current characteristics such as mobility are corrected (Figure 1(a)). It is desirable to do so because during the period when current is supplied to the display element 105 (Figure 1(b The gate potential of transistor 101 obtained in )) (the current voltage held in capacitive element 102 During the period when current is supplied to the display element 105 using the load (Figure 1(b)), This is because it performs processing. However, the current characteristics such as the mobility of transistor 101 Immediately after the period during which the stutter is being corrected (Figure 1(a)), current is supplied to the display element 105. The process is not limited to causing the following period (Figure 1(b)). During the period in which variations in current characteristics are being corrected, the charge amount of the capacitive element 102 changes. And, the amount of charge of the capacitive element 102 determined at the end of the period is used to supply current to the display element 105. If there is no significant change during the period of supply (Figure 1(b)), then the transition The period during which variations in current characteristics such as the mobility of sta101 are corrected (Figure 1(a)), and Table Another process is performed during the period when current is supplied to the indicator element 105 (Figure 1(b)). A time limit may be set.

[0084] Therefore, this period compensates for variations in current characteristics such as the mobility of transistor 101. The charge held in the capacitive element 102 at the end of the process, and the current supplied to the display element 105. The charge held in the capacitive element 102 at the start of the period is approximately the same amount. It is desirable that the charge amounts of both sides differ slightly due to the influence of noise, etc. In some cases, however, the difference in charge between the two is preferably within 10%, and more preferably within 10%. It is desirable that the difference be within 3%. If the difference in charge amount is within 3%, the display element will reflect that difference. This is preferable because the difference cannot be perceived by the human eye.

[0085] Therefore, the period during which variations in current characteristics such as the mobility of transistor 101 are corrected (Figure Figure 3(a) shows how the voltage-current characteristics change in 1(a). The charge stored in the capacitive element 102 is transferred to the current characteristics of the transistor 101, such as its mobility. During the period in which variation is being corrected (Figure 1(a)), the source and the drive of transistor 101 The discharge occurs through the gap between the rains. As a result, the charge held in the capacitive element 102 As the quantity decreases, the voltage held by the capacitive element 102 also decreases. Therefore, The absolute value of the voltage between the gate and source of the inverter 101 also decreases. The stored charge is discharged through transistor 101, so the amount of charge discharged This depends on the current characteristics of transistor 101. In other words, the mobility of transistor 101 is The higher the value, the more charge will be discharged. Alternatively, the channel width W of transistor 101 and A larger ratio of channel length L (W / L) allows more charge to be discharged. If the absolute value of the voltage between the gate and source of the converter 101 is large (that is, capacitive element 1 If the absolute value of the voltage held at 02 is large, more charge will be discharged. Or, If the parasitic resistance in the source and drain regions of transistor 101 is small, then more The charge is discharged. Or, if the resistance in the LDD region of transistor 101 is small, A large amount of charge is discharged. Alternatively, the capacitor electrically connected to transistor 101 If the contact resistance at the tact hole is low, more charge will be discharged.

[0086] Therefore, before discharge, that is, to compensate for variations in current characteristics such as the mobility of transistor 101 The graph of the voltage-current characteristics during the period before the correction period (Figure 1(a)) is shown below. During the period in which variations in current characteristics such as the mobility of Zistor 101 are corrected (Figure 1(a)) As a result of some of the charge stored in the capacitive element 102 being discharged, the curve has a small slope. The graph changes to this. And, for example, the difference between the voltage-current characteristics graphs before and after discharge is, The higher the mobility of transistor 101, the larger the result. When the mobility is high (i.e., when the slope of the graph is steep), after discharge, the change in the slope When the quantity is large and the mobility of transistor 101 is low (i.e., the slope of the graph is small) In the case of [condition not specified], after discharge, the amount of change in slope becomes small. As a result, after discharge, the difference in the graphs of the voltage-current characteristics becomes small between the case where the mobility of the transistor 101 is high and the case where it is low, and the influence of the variation in mobility can be reduced. Further, if the absolute value of the voltage between the gate and source of the transistor 101 is large (that is, if the absolute value of the voltage held by the capacitive element 102 is large), more charges are discharged, and if the absolute value of the voltage between the gate and source of the transistor 101 is small (that is, if the absolute value of the voltage held by the capacitive element 102 is small), the amount of charge discharged becomes small, so that the variation in mobility can be reduced more appropriately. Note that the graph in Fig. 3(a) is a graph after the influence of the variation in the threshold voltage has already been reduced. Therefore, as shown in Fig. 3(b), before entering the period (Fig. 1(a)) during which the variation in the mobility of the transistor 101 is corrected, the influence of the variation in the threshold voltage is reduced. In order to reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a

[0087] ), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. Note that the current characteristics of the transistor 101 for which the variation can be corrected are the movement of the transistor 101. In order to reduce the variation in the threshold voltage, the graph of the voltage-current characteristics is translated parallel by the amount of the threshold voltage. That is, a voltage obtained by adding the video signal voltage and the threshold voltage is supplied to the voltage between the gate and source of the transistor. As a result, the influence of the variation in the threshold voltage is reduced. After reducing the variation in the threshold voltage, as shown in the graph of Fig. 3(a ), by reducing the variation in mobility, the variation in the current characteristics of the transistor 101 can be significantly reduced. Note that the current characteristics of the transistor 101 for which the variation can be corrected are the movement of the transistor 101.

[0088] Note that the current characteristics of the transistor 101 for which the variation can be corrected are the movement of the transistor 101 In addition to mobility, the threshold voltage, parasitic resistance in the source (drain) portion, and LDD region are also important. The resistor in the contact hole is electrically connected to transistor 101. Resistors can also be mentioned. These current characteristics also involve the discharge of charge through transistor 101. Therefore, as with mobility, it is possible to reduce variability.

[0089] Therefore, before discharge, that is, to correct for variations in current characteristics such as the mobility of transistor 101. The amount of charge of the capacitive element 102 during the period before entering the period (Figure 1(a)) is End of the period (Figure 1(a)) during which variations in current characteristics such as the mobility of Zistor 101 are corrected. This is greater than the charge amount of the capacitive element 102 at the time of completion. This is because the transition of transistor 101 During the period in which variations in current characteristics such as kinetics are corrected (Figure 1(a)), the capacitive element 102 Because the charge is discharged, the charge stored in the capacitive element 102 decreases. That is the case.

[0090] Furthermore, the charge held in the capacitive element 102 will stop discharging immediately once a portion of it has discharged. It is desirable to do so. If it were to completely discharge, that is, until the current stops flowing... If the battery is discharged completely, almost all of the video signal information will be lost. It is desirable to stop the discharge before it is discharged. In other words, current to transistor 101 It is desirable to stop the discharge while the current is flowing.

[0091] Therefore, divide the 1-gate selection period (or 1 horizontal period, 1 frame period) by the number of pixel rows. The calculated value (and other factors) and the variation in current characteristics such as the mobility of transistor 101 are corrected. Comparing the length with the period (Figure 1(a)), 1 gate selection period (or 1 horizontal period, 1 A longer value (such as the frame duration divided by the number of pixel rows) is desirable because, This is because discharging for a longer period than the 1-gate selection period may result in over-discharging. However, this is not the only example.

[0092] Alternatively, the period during which a video signal is input to the pixel and the current such as the mobility of transistor 101. Comparing the length of the period for correcting characteristic variations (Figure 1(a)) with the length of the period for image transmission to pixels, It is desirable that the period during which the numbers are being input is longer. This is because the video signal is being input to the pixels. This is because if the discharge is performed for a longer period than the intended duration, there is a possibility of over-discharging. This is not limited to this.

[0093] Alternatively, the period during which the threshold voltage of the transistor is obtained and the movement of transistor 101. Comparing this with the period during which variations in current characteristics such as degrees are corrected (Figure 1(a)), It is desirable to have a longer period during which the transistor's threshold voltage is being acquired. This is because, If the discharge is performed for a longer period than the time the transistor's threshold voltage is acquired, it will discharge too much. Because it could happen. However, it is not limited to this.

[0094] Note that this is a period during which variations in current characteristics such as the mobility of transistor 101 are corrected (Figure 1). (a)) The length of the period during which the charge held in the capacitive element 102 is discharged is, for example For example, the amount of variation in the mobility of transistor 101, the size of the capacitive element 102, and the transistor It is desirable to make a decision based on factors such as the W / L of 101.

[0095] For example, consider the case where there are multiple circuits shown in FIGS. 1 and 2. As an example, it has a first pixel for displaying a first color and a second pixel for displaying a second color, and each pixel is a transistor corresponding to transistor 101. Let the first pixel have transistor 101A and the second pixel have transistor 101B. Similarly, as a capacitor element corresponding to capacitor element 102, let the first pixel have capacitor element 102A and the second pixel have capacitor element 102B. Each pixel is a transistor corresponding to transistor 101. The first pixel has transistor 101A, and the second pixel has transistor 101B. And, as a capacitor element corresponding to capacitor element 102, the first pixel has capacitor element 102A, and the second pixel has capacitor element 102B. pixel has capacitor element 102A and the second pixel has capacitor element 102B. pixel has capacitor element 102A and the second pixel has capacitor element 102B.

[0096] And when the W / L of transistor 101A is larger than the W / L of transistor 101B, it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. Because transistor 101A discharges more charge, the voltage of capacitor element 102A will also change more greatly. Therefore, in order to adjust this, it is desirable that the capacitance value of capacitor element 102A is large. Or, when the channel width W of transistor 101A is larger than the channel width W of transistor 101B, it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. Or, when the channel length L of transistor 101A is smaller than the channel length L of transistor 101B, it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B. it is desirable that the capacitance value of capacitor element 102A is larger than the capacitance value of capacitor element 102B.

[0097] In addition, in order to control the discharge amount of the charge held in capacitor element 102, it is possible to additionally arrange a capacitor element. For example, FIGS. 4(a) and 4(b) show an example of the case where a capacitor element is added with respect to FIGS. 1(a) and 1(b). FIGS. 4(a) to 4(f) show an example of the case where a capacitor element is added with respect to FIGS. 1(a) and 1(b). show an example of the case where a capacitor element is added with respect to FIGS. 1(a) and 1(b). The circuit configuration described is an example of realizing the circuit configuration shown in Figures 1(a) and 1(b) above. This is what is shown. In reality, there are multiple switches as shown in Figures 4(a) to 4(f). In addition to capacitive elements, it also controls the on / off state of multiple switches provided between the wires. This realizes the connection relationship of the circuit configuration.

[0098] In Figures 4(a) and 4(b), the first terminal (or first electrode) of the capacitive element 402A The drain (or source, second terminal, second electrode) of transistor 101 is in a conductive state. In this state, the second terminal (or second electrode) of the capacitive element 402A is in a conductive state with respect to the wiring 103. In Figure 4(b), the conductivity state of each terminal of the capacitive element 402A is shown in Figure 4(a). It is desirable that it be the same as, but not limited to, the same. Some parts may be in a non-conductive state. .

[0099] Similarly, Figure 4(c) shows another example where a capacitive element is added to Figures 1(a) and 1(b). This is shown in Figure 4(d). The first terminal (or first electrode) of the capacitive element 402B is a transient The drain (or source, second terminal, second electrode) of sta 101 is in electrical contact, The second terminal (or second electrode) of the element 402B is in electrical contact with the wiring 106. Oh, in Figure 4(d), the conductivity of each terminal of the capacitive element 402B is the same as in Figure 4(c). This is desirable, but not limited to this. Some parts may be in a non-conductive state.

[0100] For example, consider the case where there are multiple circuits as shown in Figure 4. As an example, the first color is represented It has a first pixel for displaying and a second pixel for displaying a second color, each The first pixel is a transistor corresponding to transistor 101, and the first pixel is a transistor Let the second pixel have transistor 101A and transistor 101B. Similarly, the capacitance As a capacitive element corresponding to element 102, the first pixel has a capacitive element 102A, and the second pixel has a capacitive element 102A. It is assumed that it has a capacitive element 102B. Furthermore, capacitive elements 402A to 40 As a capacitive element corresponding to at least one of 2C, the first pixel is a capacitive element 40 Let 2AA be defined as having a second pixel which is a capacitive element 402AB.

[0101] Furthermore, the W / L of transistor 101A is greater than the W / L of transistor 101B. In this case, the capacitance value of capacitive element 102A is greater than the capacitance value of capacitive element 102B. This is preferable. Alternatively, the capacitance value of capacitive element 402AA is greater than that of capacitive element 402AB. It is preferable that it be larger than the sum of capacitive element 102A and capacitive element 402AA. The capacitance value is greater than the combined capacitance value of capacitance element 102B and capacitance element 402AB. This is preferable because transistor 101A discharges more charge, thus increasing the potential. This is for adjustment purposes. Alternatively, the channel width W of transistor 101A is... If the channel width W of 01B is greater, the capacitance value of capacitive element 102A is greater than that of capacitive element It is desirable that the capacitance value be greater than that of 102B. Alternatively, the capacitance value of capacitive element 402AA It is desirable that the capacitance value of the capacitive element 402AB is greater than the capacitance value of the capacitive element 10 The combined capacitance value of 2A and capacitive element 402AA is greater than that of capacitive element 102B and capacitive element 402A. It is desirable that the total capacitance value of B be greater than the total capacitance value of B. Alternatively, the channel of transistor 101A If the channel length L is smaller than the channel length L of transistor 101B, then capacitive element 102A It is desirable that the capacitance value of is greater than the capacitance value of capacitive element 102B. Or, capacitance It is desirable that the capacitance value of element 402AA is greater than the capacitance value of capacitance element 402AB. Alternatively, the total capacitance value of capacitive element 102A and capacitive element 402AA is greater than that of capacitive element 1 It is desirable that the capacitance value is greater than the combined capacitance value of 02B and the capacitive element 402AB.

[0102] Note that the capacitance values ​​of capacitive element 402AA and capacitive element 402AB are different, and capacitive element 10 It is also possible that the capacitance values ​​of 2A and the capacitance element 102B are approximately equal. Yes, that is. In other words, the adjustment of the capacitance value is done not between capacitance element 102A and capacitance element 102B, but between the capacitance element It is also possible to use sub-element 402AA and capacitive element 402AB. If the size of sub-element 102A and capacitive element 102B are different, a difference in the size of the video signal will occur. There is a possibility of other significant impacts, such as the possibility of damage. Therefore, capacitive element 402A It is preferable to adjust the capacitance value using A and the capacitive element 402AB.

[0103] Note that the circuit connection structure is not limited to those shown in Figures 1(a) and 1(b). For example, Figure 1(a) In Figure 1(b), the second terminal (or second electrode) of the capacitive element 102 is connected to the wiring 103. In a conductive state, but not limited to this. At least for a predetermined period of time, a constant potential is maintained. It is sufficient that the wiring having the function of supplying power is in a state of continuity. For example, the second of the capacitive element 102 An example where the terminal (or second electrode) is connected to wiring 107 is shown in Figure 1(c), Figure As shown in 1(d). Similarly, the second terminal (or second electrode) of the capacitive element 102 is connected to the wiring 10 Examples of the case where it is connected to 6 are shown in Figures 1(e) and 1(f).

[0104] Furthermore, in Figures 1(c) to 1(f), as in Figures 4(a) to 4(d), additional... Capacitive elements can be arranged in this way. As an example, in Figure 1(c) and Figure 1(d), Figures 4(e) and 4(f) show the case where the additional capacitive element 402C is arranged.

[0105] Furthermore, in Figures 1(c) to 1(f), as in Figures 2(a) to 2(f), A switch can be placed.

[0106] Note that Figures 1(a) to 1(f), Figures 2(a) to 2(f), and Figures 4(a) to 4(f) In the above, the capacitive element 102 was described using a single notation, but this is not the only way to describe it. Multiple capacitive elements can be arranged in series or in parallel. For example, in Figures 1(a) and 1(b), two capacitive elements 102A and 102B are connected in series. Examples of the connected state are shown in Figures 1(g) and 1(h).

[0107] Note that in Figures 1, 3, and 4, when transistor 101 is a P-channel type... As mentioned above, this is not the only option. As shown in Figure 5, it is possible to use an N-channel type. As an example, consider the case where an N-channel type is used for Figures 1(a) to 1(d). This is shown in Figures 5(a) to 5(d). The same procedure can be followed in other cases as well. The circuit configuration described in Figures 5(a) to 5(d) is shown in Figures 1(a) and 1(b) above. This is shown as an example of realizing the circuit configuration. Note that in practice, see Figures 5(a) through 5(a). In addition to the multiple switches and capacitive elements shown in 5(d), multiple switches are provided between the wires. The connection relationships of the circuit configuration are realized by controlling whether the switch is on or off.

[0108] Furthermore, transistor 101 controls the magnitude of the current flowing to the display element 105, and the display element It often has the capability to drive 105, but is not limited to this.

[0109] Furthermore, wiring 103 often has the capability to supply power to the display element 105. In other words, the wiring 103 has the ability to supply current to the transistor 101. While combinations are common, this is not the only option.

[0110] In many cases, the wiring 107 has the ability to supply voltage to the capacitive element 102. Alternatively, the gate potential of transistor 101 can be made less susceptible to fluctuations due to noise, etc. They often have this function, but are not limited to it.

[0111] Note that the voltage corresponding to the threshold voltage of transistor 101 is the threshold voltage of transistor 101 A voltage of the same magnitude as the threshold voltage, or a voltage close to the threshold voltage of transistor 101. This refers to a voltage that has a certain characteristic. For example, if the threshold voltage of transistor 101 is large, The voltage corresponding to the threshold voltage is also large, and the threshold voltage of transistor 101 is small. The voltage corresponding to the threshold voltage is also small. In this way, the magnitude is determined according to the threshold voltage. A voltage that is fixed in place is called a voltage corresponding to the threshold voltage. Therefore, noise Even voltages that differ slightly due to factors such as these are called voltages corresponding to the threshold voltage. It is possible.

[0112] The display element 105 has functions that change brightness, lightness, reflectance, transmittance, etc. It refers to an element that possesses a liquid crystal element. Therefore, examples of display elements 105 include liquid crystal elements and light-emitting elements. Organic EL elements, electrophoretic elements, etc., can be used.

[0113] In this embodiment, the details described in each figure are the same as those described in other embodiments. In contrast, combinations or substitutions can be freely made as appropriate.

[0114] (Embodiment 2) This embodiment provides specific examples of the circuit and driving method described in Embodiment 1.

[0115] Figure 6(a) shows specific examples of Figures 1(a), 1(b), 2(a), and 2(d). The first terminal of switch 601 is connected to wiring 104, and the second terminal is connected to the transistor. It is connected to the source (or drain) of 101. The first terminal of switch 203 is The second terminal is connected to the source (or drain) of transistor 101, with wiring 103 connected to the source (or drain) The first terminal of the capacitive element 102 is connected to the gate of the transistor 101. The second terminal is connected to wiring 103. The first terminal of switch 201 is The second terminal is connected to the gate of transistor 101, and the drain of transistor 101 ( It is connected to (or source). The first terminal of switch 202 is connected to transistor 101 The second terminal is connected to the drain (or source) of the first terminal of the display element 105. They are connected. The second terminal of the display element 105 is connected to the wiring 106.

[0116] Furthermore, the potential of the drain (or source) or gate of transistor 101 is controlled. Therefore, it is desirable to add a switch. However, it is not limited to this. An example of the addition is shown in Figures 6(b) and 6(c). In Figure 6(b), switch 602 is added. The first terminal is connected to the gate of transistor 101, and the second terminal is connected to wiring 60 It is connected to 6. In Figure 6(c), a switch 603 is added, and its first terminal is T The second terminal is connected to the drain (or source) of the transistor 101, and to wiring 606. It is connected.

[0117] Furthermore, wiring 606 can be shared with other wiring to reduce the number of wires. For example, Figure 6(d) shows an example where wiring 106 and wiring 606 are shared, and the configuration is made using only wiring 106. As shown in the diagram, the first terminal of switch 602 is connected to the gate of transistor 101, and the second terminal is connected to the gate of transistor 101. The terminal is connected to wiring 106. In this way, the second terminal of switch 602 is connected The destination is not limited and it can be connected to various types of wiring. And together with other wiring... By using this method, the number of wires can be reduced.

[0118] Note that the circuit connection configuration is not limited to this. If placed, switches, transistors, etc. can be placed in various locations. It is possible to realize circuits with various configurations.

[0119] Thus, the example of the configuration described in Embodiment 1 can take various forms. Furthermore, specific examples were shown in Figures 1(a), 1(b), 2(a), and 2(d). Similarly, specific examples can be constructed in Figures 1, 2, 4, and 5.

[0120] As an example, Figure 6(e) shows an example of Figures 1(c) and 1(d). So, the second terminal of switch 603 and the second terminal (or second electrode) of capacitive element 102 ) are both connected to wiring 107 and share wiring. However, this is not limited to do not have.

[0121] Furthermore, examples of Figures 4(c) and 4(d) are shown in Figure 6(f). Capacitive element 402B, The first terminal is connected to the drain (or source) of transistor 101, and the second terminal It is connected to wiring 106.

[0122] Thus, Figure 6 shows some examples of the configuration described in Embodiment 1, but Other examples can be constructed in a similar manner.

[0123] Next, we will describe the operation method. Here, we will use the circuit in Figure 6(b) as an example, but The same operating method can be used for external circuits as well.

[0124] First, initialization is performed as shown in Figure 7(a). This involves the gate of transistor 101. Alternatively, it is the operation of setting the potential of the drain (or source) to a predetermined potential. This allows us to bring transistor 101 into a state where it turns on. Alternatively, a capacitive element A predetermined voltage is supplied to 102. As a result, a charge is retained in the capacitive element 102. Switch 602 is in a conductive state and is on. Switch 601, Switch 201, Switch 202, and Switch 203 are in a non-conductive state and are off. It is desirable that this be the case. However, it is not limited to this. However, if the display element 105 is powered Since it is desirable for there to be no flow, it is desirable to be in a state where this can be achieved. Therefore, at least one of switch 202 and switch 203 is It is desirable that it be in a non-conductive state and turned off.

[0125] Furthermore, it is desirable that the potential of wiring 606 be lower than that of wiring 104. The position should preferably be approximately the same as wiring 106. Here, "approximately" means equal within the margin of error. This refers to a state where the differences are within ±10% of each other. The potentials are not limited to these. Also, these potentials depend on whether transistor 101 is a P-channel type. This is the case. Therefore, if the polarity of transistor 101 is N-channel type, the potential is up or down. The relationship should ideally be reversed.

[0126] Next, as shown in Figure 7(b), the video signal is input. Note that during this period, The threshold voltage of the inverter 101 will also be acquired. Switch 601, Switch 20 Switch 1 is in a conductive state and is ON. Switch 202, Switch 203, Switch 602 should be in a non-conductive state and preferably off. And wiring 104 Then, a video signal is supplied. At this time, the capacitive element 102 receives the video signal during the period shown in Figure 7(a). Because there is an accumulated charge, that charge will be discharged. Therefore, transistor 101 The gate potential of transistor 101 is determined from the video signal supplied from wiring 104. It approaches the potential obtained by adding up negative voltages. In other words, the voltage supplied from wiring 104 The potential is close to the absolute value of the threshold voltage of transistor 101, which is lower than the video signal. This continues. At this time, the voltage between the gate and source of transistor 101 is The voltage approaches the threshold voltage of TA101. These operations allow the video signal input and the threshold voltage to be adjusted. It is possible to acquire the voltage value and perform the operation simultaneously. Furthermore, the charge of the capacitive element 102 is discharged. In that case, it is possible to discharge it almost completely. In that case, transistor 101 is almost Since almost no current is flowing, the voltage between the gate and source of transistor 101 is The magnitude is very close to the threshold voltage of transistor 101. However, it is not completely It is also possible to stop the discharge before it occurs.

[0127] Through this operation, the capacitive element 102 receives a voltage corresponding to the threshold voltage and the video signal voltage. A voltage equal to the sum of the two is supplied, and a charge corresponding to that voltage is accumulated.

[0128] Furthermore, if the charge of the capacitive element 102 is discharged during this period, there will be differences in the duration. However, there is no major problem. This is because, after a certain amount of time has passed, it will be almost completely discharged. Therefore, even if the duration differs, the impact on the operation is small. This operation can be driven using point-by-point sequence rather than line-by-line sequence. Therefore, The drive circuit can be implemented with a simple configuration. Therefore, the circuit shown in Figure 6 can be implemented in one drawing. When considered as a base, it consists of a pixel section where the pixels are arranged in a matrix, and a signal supply to the pixel section. Regarding the drive circuit section, both shall be constructed using the same type of transistor, or the same It becomes possible to form it on the same substrate. However, it is not limited to this, and line sequential driving can be used. It is also possible to form the pixel section and the drive circuit section on separate substrates.

[0129] Next, as shown in Figure 7(c), the variation in current characteristics such as the mobility of transistor 101 This corrects the period shown in Figures 1(a) and 1(c). Then, the switch Switch 201, Switch 203 is in a conductive state and is on. Switch 601, Switch Switch 202 and switch 602 should be in a non-conductive state and preferably in the off position. By creating this state, the charge accumulated in the capacitive element 102 will be released into the transistor 1 It is discharged through 01. In this way, a small amount is discharged through transistor 101. By applying power, the effect of current variations in transistor 101 can be reduced. ru.

[0130] Next, as shown in Figure 7(d), current is supplied to the display element 105 via the transistor 101. To supply. This corresponds to the period shown in Figure 1(b), Figure 1(d), etc. And switch 2 02. Switch 203 is in a conductive state and is on. Switch 201, switch The terminals 601 and 602 should be in a non-conductive state and preferably in the off position. At that time, the voltage between the gate and source of transistor 101 is a voltage corresponding to the threshold voltage. From the sum of the voltages of the video signal voltage and the video signal voltage, a voltage corresponding to the current characteristics of transistor 101 is subtracted. The voltage is reduced. Therefore, the influence of variations in the current characteristics of transistor 101 is present. This can reduce the current, and an appropriate current can be supplied to the display element 105. ru.

[0131] In the case of the circuit configuration shown in Figure 6(a), during the initialization period shown in Figure 7(a), Figure 8 As shown in (a), the gate or drain of transistor 101 is controlled via the display element 105. It is possible to control the potential of the input (or source). And, switch 201, Switch 202 should be in a conductive state and preferably on. Switch 601, Regarding switch 203, it is desirable that it be in a non-conductive state and therefore off. This is not limited to that. Figures 7(b) and later can be operated similarly.

[0132] Alternatively, in the case of the circuit configuration shown in Figure 6(c), during the initialization period shown in Figure 7(a), As shown in 8(b), the gate or gate of transistor 101 is controlled via switch 603. It is possible to control the potential of the rain (or source). And switch 201, Switch 603 should be in a conductive state and preferably in the ON position. Switch 601 Switches 202 and 203 are in a non-conductive state and are turned off. This is desirable, but it is not limited to this. For Figure 7(b) and later, if you operate it similarly... good.

[0133] In Figure 7, when switching to each operation, another operation or another operation may occur during that operation. It is also possible to set a period of time. For example, the state shown in Figure 8(c) It may be placed between 7(a) and 7(b). Such a period can be included without causing any problems. There is no problem.

[0134] In this embodiment, the details described in each figure are the same as those described in other embodiments. In contrast, combinations or substitutions can be freely made as appropriate.

[0135] (Embodiment 3) This embodiment describes another specific example of the circuit and driving method described in Embodiment 1. .

[0136] Figure 9(a) shows specific examples of Figures 1(a), 1(b), and 2(a). Switch 9 The first terminal of 01 is connected to wire 104, and the second terminal is connected to the gateway of transistor 101. It is connected to the gate. The first terminal of the capacitive element 102 is connected to the gate of the transistor 101. The second terminal is connected to wiring 103. The first terminal of switch 201 is The second terminal is connected to the gate of transistor 101, and the second terminal is connected to the drain of transistor 101. It is connected to (or source). The first terminal of switch 202 is connected to transistor 10 The second terminal is connected to the drain (or source) of 1, and the second terminal is connected to the first terminal of the display element 105. It is connected to the second terminal of the display element 105, which is connected to the wiring 106. The source (or drain) of inverter 101 is connected to wiring 103.

[0137] Note that the circuit connection configuration is not limited to this. If placed, switches, transistors, etc. can be placed in various locations. It is possible to realize circuits with various configurations.

[0138] For example, as shown in Figure 9(e), it is possible to change the connection of switch 901. In Figure 9(e), the first terminal of switch 901 is connected to wiring 104, and the second terminal is It is connected to the drain (or source) of transistor 101.

[0139] Thus, the example of the configuration described in Embodiment 1 can take various forms. Furthermore, specific examples of Figures 1(a), 1(b), and 2(a) have been shown, but Figures 1 and 2 Similarly, specific examples can be constructed in Figures 4 and 5.

[0140] Next, I will describe how it works.

[0141] First, as shown in Figure 9(b), the video signal is input. Switch 901 is in the conductive state. Yes, it is on. Switches 201 and 202 are in a non-conductive state and are off. It is desirable to have it. Then, the video signal is supplied from wiring 104. At this time, capacity Charge accumulates in element 102.

[0142] Next, as shown in Figure 9(c), the variation in current characteristics such as the mobility of transistor 101 This corrects the period shown in Figures 1(a) and 1(c). Then, the switch Switch 201 is in a conductive state and is on. Switches 901 and 202 are non-conductive. This state is desirable, and it is best to keep it off. By putting it in this state, the capacitive element The charge accumulated in 102 is discharged through transistor 101. By causing a slight discharge through transistor 101, the transistor 101 This can reduce the effects of current fluctuations.

[0143] Next, as shown in Figure 9(d), current is supplied to the display element 105 via the transistor 101. To supply. This corresponds to the period shown in Figure 1(b), Figure 1(d), etc. And switch 2 Switch 02 is in a conductive state and is ON. Switches 201 and 901 are in a non-conductive state. In this state, it is desirable that it be turned off. At this time, the gate and saw of transistor 101 The voltage between the two points is determined by the current characteristics of transistor 101, which are added to the video signal voltage. The voltage is reduced. Therefore, this is due to variations in the current characteristics of transistor 101. This reduces resonance and allows for the supply of an appropriate current to the display element 105. come.

[0144] In the case of the circuit configuration shown in Figure 9(e), during the period shown in Figure 9(b), switch 201 and S Switch 901 should ideally be in a conductive state and therefore "on". Figure 9(c For the parts after that, you can operate them in the same way.

[0145] In Figure 9, when switching to each operation, another operation or another operation may occur during that operation. It is also possible to set a period for this.

[0146] In this embodiment, the details described in each figure are the same as those described in other embodiments. In contrast, combinations or substitutions can be freely made as appropriate.

[0147] (Embodiment 4) In this embodiment, specific examples of the circuits described in Embodiments 1 to 3 are shown. .

[0148] For example, the circuit shown in Figure 6(b) constitutes one pixel, and that pixel is arranged in a matrix. Figure 10 shows the case where this is the case. Note that in Figure 10, the switch is a P-channel type. This is achieved using transistors of the same polarity. However, it is not limited to this, and transistors of other polarities can also be used. Using a stylus, or using a transistor with both polarities, or a diode or diode terminal It is also possible to use connected transistors, etc.

[0149] The circuit shown in Figure 6(b) constitutes a pixel 1000M, which is one pixel. Pixels with a similar configuration to 00M are designated as pixel 1000N, pixel 1000P, and pixel 1000Q. They are arranged in a matrix. Each pixel has the same wiring depending on its vertical and horizontal position. It may be connected.

[0150] Next, the correspondence between each element in Figure 6(b) and each element in a 1000M pixel is shown below. Wiring 104 corresponds to wiring 104M, wiring 103 corresponds to wiring 103M, and the switch 601 corresponds to transistor 601M, and switch 203 corresponds to transistor 203M. Transistor 101 corresponds to transistor 101M, and capacitive element 102 is a capacitor. Element 102M corresponds to switch 201, and transistor 2 corresponds to switch 2 02 corresponds to transistor 202M, and switch 602 corresponds to transistor 602M. Correspondingly, the display element 105 corresponds to the light-emitting element 105M, and the wiring 106 corresponds to the wiring 106M. Accordingly, wiring 606 corresponds to wiring 606M.

[0151] The gate of transistor 601M is connected to wiring 1002M. Transistor 20 The gate of transistor 3M is connected to wiring 1001M. The gate of transistor 202M is It is connected to wiring 1003M. The gate of transistor 201M is connected to wiring 1004M. They are connected. The gate of transistor 602M is connected to wire 1005M.

[0152] Note that the wiring connected to the gate of each transistor is the wiring of another pixel or the same It is possible to connect to another wiring of the pixel. For example, the gateway of transistor 602M The wire can be connected to the wiring 1002N, which is the wiring of pixel 1000N. In this case, wiring 1005M and wiring 1002N are shared, and wiring 1005M is deleted. It is possible.

[0153] Furthermore, a transistor 602M having 3 or 4 terminals is used as the switch 602. The example shown is for a two-terminal diode, or a diode-connected transistor. It is possible to use them. When using them, the on or off of transistor 602M The wiring 1005M that was controlling it can be removed.

[0154] Note that wiring 606M is connected to wiring 606P, wiring 606N, wiring 606Q, and wiring 106M. It is possible to connect them. Alternatively, wiring 606M can be connected to wiring of other pixels. It is possible to do so.

[0155] Similar to Figure 10, it is possible to construct various circuits.

[0156] In this embodiment, the details described in each figure are the same as those described in other embodiments. In contrast, combinations or substitutions can be freely made as appropriate.

[0157] (Embodiment 5) In this embodiment, the structure and manufacturing method of the transistor will be described.

[0158] Figures 11(A) through (G) show examples of transistor structures and manufacturing methods. Figure 1(A) is a diagram showing an example of a transistor structure. Figures 11(B) through (G) show a transistor... This figure shows an example of a method for manufacturing a generator.

[0159] Furthermore, the structure and manufacturing method of the transistor are not limited to those shown in Figures 11(A) to (G). Furthermore, various structures and manufacturing methods can be used.

[0160] First, let's refer to Figure 11(A) to explain an example of a transistor structure. Figure 11(A) This is a cross-sectional view of a transistor having multiple different structures. Here, in Figure 11(A) Here, transistors with multiple different structures are shown side by side, which is because This is a representation used to explain the structure of a transistor, and the transistor is actually as shown in Figure 11(A). They do not need to be placed side by side; they can be created separately as needed.

[0161] Next, we will describe the characteristics of each layer that makes up the transistor.

[0162] Substrate 7011 is a glass substrate such as barium borosilicate glass or aluminoborosilicate glass. A plate, quartz substrate, ceramic substrate, or metal substrate including stainless steel can be used. Other materials include polyethylene terephthalate (PET) and polyethylene naphthalate (PEN). , flexible plastics such as polyethersulfone (PES) or acrylics It is also possible to use a substrate made of a synthetic resin having the following properties. This makes it possible to manufacture semiconductor devices that can be bent. As long as the substrate has the properties, there are no major restrictions on the area and shape of the substrate, so substrate 7011 and For example, if you use a rectangular object with sides of 1 meter or more, productivity can be significantly increased. This can be improved. These advantages are compared to using a circular silicon substrate. That would be a significant advantage.

[0163] The insulating film 7012 functions as a base film. From the substrate 7011, alkali metals such as Na or This is provided to prevent alkaline earth metals from adversely affecting the characteristics of semiconductor devices. The film 7012 is silicon dioxide (SiO₂). x ), silicon nitride (SiN x ), silicon oxide nitride (S iO x N y )(x>y), silicon nitride (SiN x O y Oxygen or nitrogen such as (x>y) It can be provided in the form of a single-layer structure of insulating film or a multilayer structure thereof. For example, insulating When the film 7012 is provided in a two-layer structure, a silicon nitride film is provided as the first insulating film, and the second layer A silicon oxide nitride film is used as an insulating film for the eye. Another example is using three layers of insulating film 7012. When provided in a structure, a silicon oxide nitride film is provided as the first insulating layer, and as the second insulating layer It is preferable to provide a silicon nitride film and then a silicon oxide nitride film as a third insulating layer.

[0164] Semiconductor layer 7013, semiconductor layer 7014, and semiconductor layer 7015 are amorphous semiconductor Conductors, microcrystalline semiconductors, or semi-amorphous semiconductors (SAS) It can be formed. Alternatively, a polycrystalline semiconductor layer may be used. SAS is amorphous and It has an intermediate structure between crystalline structures (including single crystals and polycrystalline structures) and is stable in terms of free energy. A semiconductor having state 3, which includes a crystalline region having short-range order and lattice distortion. It is observed that at least some regions within the film contain crystalline regions of 0.5 to 20 nm. This can be done, and in the case where silicon is the main component, the Raman spectrum is 520 cm⁻¹. -1 Lower wavenumber It is shifted to the side. X-ray diffraction suggests that it originates from the silicon crystal lattice (111), (22 A diffraction peak at 0) is observed. This compensates for unbonded bonds (dangling bonds). It contains at least 1 atomic % or more of hydrogen or halogen. The SAS is a material gas formed by glow discharge decomposition (plasma CVD). As the material gas, SiH4, and in addition, Si2H6, SiH2Cl2, SiHCl3, SiCl4, SiF4, etc. can be used . Alternatively, GeF4 can be mixed. This material gas can be diluted with H2, or H2 and one or more noble gas elements selected from He, Ar, Kr, and Ne . The dilution ratio is in the range of 2 to 1000 times, the pressure is in the range of approximately 0.1 Pa to 133 Pa, the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz, and the substrate heating temperature can be 300 °C or lower. As impurity elements in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon should desirably be 1×10 20 cm -1 or less, and in particular, the oxygen concentration should be 5×10 1 9 / cm 3 or less, preferably 1×10 19 / cm 3 or less. Here, a material mainly composed of silicon (Si) (such as Si Ge x etc.) is used to form an amorphous semiconductor layer by sputtering, 1-x LPCVD method, plasma CVD method, etc., and the amorphous semiconductor layer is crystallized by a crystallization method such as laser crystallization method, thermal crystallization method using RTA or a furnace annealing furnace, or thermal crystallization method using a metal element that promotes crystallization .

[0165] The insulating film 7016 is silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (Si O x N y )(x > y), silicon nitride oxide (SiN xO y (x>y) containing oxygen or nitrogen The insulating film can be provided in a single-layer structure or a multilayer structure thereof.

[0166] The gate electrode 7017 may have a single-layer conductive film or a laminated structure of two or three conductive films. Yes, it is possible. A conductive film can be used as the material for the gate electrode 7017. For example, Tantalum (Ta), Titanium (Ti), Molybdenum (Mo), Tungsten (W), Chromium Single-element films of elements such as (Cr), silicon (Si), or nitride films of the aforementioned elements (typical) This includes tantalum nitride film, tungsten nitride film, titanium nitride film, or a combination of the above elements. A combined alloy film (typically Mo-W alloy, Mo-Ta alloy), or the aforementioned element These include silicide films (typically tungsten silicide films and titanium silicide films). This is possible. Note that the aforementioned single-layer films, nitride films, alloy films, silicide films, etc., can be used as single layers. They can be used individually or stacked.

[0167] The insulating film 7018 is formed by sputtering or plasma CVD, etc., by silicon oxide (SiO x ) Silicon nitride (SiN x ), silicon oxide nitride (SiO x N y )(x>y), silicon nitride (S iN x O y )(x>y) etc. Insulating film having oxygen or nitrogen or DLC (diamond-like carbon) It can be provided as a single-layer structure of a carbon-containing film (such as carbon fiber) or as a laminated structure thereof. ru.

[0168] The insulating film 7019 is a siloxane resin or silicon dioxide (SiO₂). x ), silicon nitride (Si N x), silicon oxide nitride (SiO x N y )(x>y), silicon nitride (SiN x O y )(x >y) insulating films containing oxygen or nitrogen, or carbon such as DLC (diamond-like carbon) A film containing elements, or epoxy, polyimide, polyamide, polyvinylphenol, etc. It shall be provided as a single-layer or multi-layer structure made of organic materials such as nzocyclobutene and acrylic. This can be done. Note that siloxane resin refers to a resin containing Si-O-Si bonds. Xanes have a skeletal structure formed by the bonding of silicon (Si) and oxygen (O). Therefore, an organic group containing at least hydrogen (e.g., alkyl groups, aromatic hydrocarbons) is used. A fluoro group can also be used as a substituent. Alternatively, at least A hydrogen-containing organic group and a fluoro group may be used. Note that the insulating film 7018 may be omitted. It is also possible to directly provide the insulating film 7019 so as to cover the electrode 7017.

[0169] The conductive film 7023 is made of Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, Mn. Any single element film, or a nitride film of the said element, or a composite film of the said element A gold film or a silicide film of the aforementioned element can be used. For example, the aforementioned element As alloys containing multiple elements, Al alloys containing C and Ti, Al alloys containing Ni, and C and Al alloys containing Ni, Al alloys containing C and Mn, etc., can be used. For example, when providing a laminated structure, it is possible to create a structure in which Al is sandwiched between Mo or Ti. This improves Al's resistance to heat and chemical reactions.

[0170] Next, refer to the cross-sectional diagrams of transistors with multiple different structures shown in Figure 11(A). Next, we will explain the characteristics of each structure.

[0171] The 7001 transistor is a single-drain transistor and can be manufactured using a simple method. Therefore, it has the advantage of lower manufacturing costs and higher yield. The taper angle is... It is 45° or more and less than 95°, more preferably 60° or more and less than 95°. Or, the taper angle. It is also possible to set the angle to less than 45°. Here, semiconductor layer 7013 and semiconductor layer 7015 are Each has a different concentration of impurities, with semiconductor layer 7013 being the channel region and semiconductor layer 7015 These are used as the source and drain regions. In this way, by controlling the amount of impurities... The resistivity of the semiconductor layer can be controlled. The electrical connection state between the semiconductor layer and the conductive film 7023 can be controlled. This allows for closer ohmic connections. One method involves using gate electrode 7017 as a mask to dope the semiconductor layer with impurities. A method can be used.

[0172] Transistor 7002 has a gate electrode 7017 with a certain taper angle or greater Because it is a simple material and can be manufactured using a straightforward method, it has low manufacturing costs and a high yield. There is an advantage. Here, semiconductor layer 7013, semiconductor layer 7014, and semiconductor layer 7015 are The impurity concentrations differ between the two layers; semiconductor layer 7013 is in the channel region, and semiconductor layer 7014 is in the low-concentration region. Drain (Lightly Doped Drain: LDD) region, semiconductor layer 7015 These are used as the source and drain regions. In this way, by controlling the amount of impurities... The resistivity of the semiconductor layer can be controlled. The electrical connection state between the semiconductor layer and the conductive film 7023 can be controlled. It can be made closer to an ohmic connection. Because it has an LDD region, inside the transistor This makes it difficult for high electric fields to be applied, and thus can suppress the degradation of the element due to hot carriers. One method for creating semiconductor layers with different amounts of impurities is to mask the gate electrode 7017. A method of doping the semiconductor layer with impurities can be used. Transistor 70 In 02, since the gate electrode 7017 has a taper angle greater than a certain amount, the gate electric The goal is to create a gradient in the concentration of impurities that pass through electrode 7017 and dope the semiconductor layer. This allows for the easy formation of an LDD region. The taper angle should be between 45° and 95°. Less than 60°, more preferably 60° or more and less than 95°. Or, the taper angle is less than 45°. It is also possible to do so.

[0173] The transistor 7003 has a gate electrode 7017 which consists of at least two layers, with the lower layer being gate This is a transistor in which the gate electrode is longer than the gate electrode of the upper layer. In this case, the shape of the upper and lower gate electrodes is called a hat shape. 7 Because the shape of 017 is hat-shaped, the LDD area can be expanded without adding a photomask. A region can be formed. Furthermore, as with transistor 7003, the LDD region is the gate. The structure overlapping electrode 7017 is specifically referred to as the GOLD structure (Gate Overlappe d) is called LDD). Furthermore, the method for making the shape of the gate electrode 7017 a hat shape is as follows: Methods such as the following may also be used.

[0174] First, when patterning the gate electrode 7017, dry etching is used to pattern the underlying layer. The gate electrode and the upper gate electrode are etched to create a tapered shape on the sides. Next, anisotropic etching is used to process the upper gate electrode so that its slope becomes nearly vertical. This is done. As a result, a gate electrode with a cap-shaped cross-section is formed. Then, impurities are removed twice. By doping with elements, the semiconductor layer 7013, LD used as the channel region can be modified. Semiconductor layer 7014 used as the D region, semiconductors used as the source region and drain region Layer 7015 is formed.

[0175] Note that the LDD region overlapping with gate electrode 7017 is called the Lov region, and gate electrode 7017 We will call the LDD region that does not overlap the LDD region the Loff region. Here, the Loff region is While it is highly effective in suppressing the off-current value, it also mitigates the electric field near the drain, which can lead to hot carriers. The effect of preventing degradation of the on-current value is low. On the other hand, the Lov region relaxes the electric field near the drain. It is effective in preventing degradation of the on-current value, but has little effect in suppressing the off-current value. Therefore, It is preferable to fabricate transistors with structures that match the required characteristics for each circuit. For example, when a semiconductor device is used as a display device, the pixel transistor has an off-current value. To suppress this, it is preferable to use a transistor that has a Loff region. In a circuit, the transistor mitigates the electric field near the drain, preventing degradation of the on-current value. Therefore, it is preferable to use a transistor that has a Lov region.

[0176] Transistor 7004 is in contact with the side of gate electrode 7017, and sidewall 7021 This is a transistor having a sidewall 7021. The area overlapping with Wall 7021 can be designated as the LDD area.

[0177] Transistor 7005 is doped using mask 7022 in the semiconductor layer. This is a transistor that forms an LDD(Loff) region. This allows for the formation of an LDD region, which reduces the transistor's off-current value.

[0178] The transistor 7006 achieves LDD by doping the semiconductor layer using a mask. This is a transistor that forms a (Lov) region. By doing so, the LDD region is reliably formed. This can form a field that relaxes the electric field near the transistor's drain and degrades the on-current value. This can be reduced.

[0179] Next, examples of transistor fabrication methods are shown in Figures 11(B) to (G).

[0180] Furthermore, the structure and manufacturing method of the transistor are not limited to those shown in Figures 11(A) to (G). Furthermore, various structures and manufacturing methods can be used.

[0181] In this embodiment, a semiconductor layer 7 is placed on the surface of the substrate 7011 and on the surface of the insulating film 7012. On the surface of 013, on the surface of semiconductor layer 7014, on the surface of semiconductor layer 7015, insulating film 701 Plasma treatment is applied to the surface of 6, the surface of insulating film 7018, or the surface of insulating film 7019. By performing oxidation or nitriding, the semiconductor layer or insulating film can be oxidized or nitrided. In this way, by using plasma treatment to oxidize or nitride a semiconductor layer or insulating film, The surface of the semiconductor layer or insulating film is modified and formed by CVD or sputtering. Compared to conventional insulating films, it is possible to form a denser insulating film, thus eliminating defects such as pinholes. This suppresses the effects and improves the characteristics of semiconductor devices. The insulating film 7024 formed by this process is called a plasma-treated insulating film.

[0182] Note that the sidewall 7021 is made of silicon dioxide (SiO2). x ) or silicon nitride (SiN x ) It is possible. A method for forming a sidewall 7021 on the side of the gate electrode 7017. For example, after forming the gate electrode 7017, silicon oxide (SiO x ) or nitro Silicon (SiN x After forming the film, silicon oxide (SiO₂) is removed by anisotropic etching. x )also Silicon nitride (SiN x A method of etching the film can be used. silicon dioxide (SiO₂) is applied only to the side surface of the gate electrode 7017. x ) or silicon nitride (SiN x ) membrane Since it can be left intact, a sidewall 7021 is formed on the side of the gate electrode 7017. It is possible.

[0183] Up to this point, we have explained the structure of transistors and how to manufacture them. Now, Wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al), tan. Tal (Ta), Titanium (Ti), Molybdenum (Mo), Tungsten (W), Neodymium ( Nd), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), Copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc ( Zn, niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As) From the group composed of gallium (Ga), indium (In), tin (Sn), and oxygen (O) One or more selected elements, or one or more elements selected from the aforementioned group Compounds and alloy materials containing (for example, indium tin oxide (ITO), indium tin oxide (ITO), indium tin oxide (ITO), etc.) Lead oxide (IZO), indium tin oxide (ITSO) containing silicon oxide, zinc oxide (Zn O), tin oxide (SnO), cadmium tin oxide (CTO), aluminum neodymium (Al-Nd) Formed from magnesium silver (Mg-Ag), molybdenum niobium (Mo-Nb), etc. This is desirable. Alternatively, wiring, electrodes, conductive layers, conductive films, terminals, etc., may contain these compounds. It is desirable that it be formed by having a combination of materials, or selected from the above group. Compounds of silicon with one or more elements (silicides) (for example, aluminum silicon) (e.g., molybdenum silicon, nickel silicide), one or more selected from the above group. It contains compounds of several elements and nitrogen (e.g., titanium nitride, tantalum nitride, molybdenum nitride, etc.). It is desirable that it be formed in this way.

[0184] Note that silicon (Si) contains n-type impurities (such as phosphorus) or p-type impurities (such as boron). It may contain impurities. By containing impurities in silicon, the conductivity may be improved, or normal conductivity may be reduced. It becomes possible to behave similarly to the human body. Therefore, it is easy to use as wiring, electrodes, etc. It will get worse.

[0185] Note that silicon can be found in single crystal, polycrystalline (polysilicon), and microcrystalline (microcrystalline silicon) forms. Various types of silicon with different crystalline properties can be used, such as (con). Alternatively, silicon This allows the use of silicon that does not have crystalline properties, such as amorphous silicon. By using single-crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers, and conductive materials can be used. It is possible to reduce the resistance of the film, terminals, etc. Amorphous silicon or microcrystalline silicon By using this method, wiring and other components can be formed in a simple process.

[0186] Furthermore, aluminum or silver have high conductivity, which can reduce signal delay. Furthermore, because it is easy to etch, it is easy to pattern and perform microfabrication. .

[0187] Furthermore, because copper has high conductivity, it can reduce signal delay. When using copper, To improve adhesion, a laminated structure is desirable.

[0188] Molybdenum or titanium are oxide semiconductors (ITO, IZO, etc.) or silicon. It has advantages such as not causing defects even when in contact with other materials, being easy to etch, and having high heat resistance. Therefore, it is desirable.

[0189] Furthermore, tungsten is preferable because it has advantages such as high heat resistance.

[0190] Furthermore, neodymium is desirable because it has advantages such as high heat resistance. In particular, neodymium and When alloyed with aluminum, heat resistance is improved, and aluminum is less prone to hillock formation. It will get worse.

[0191] Furthermore, silicon has high heat resistance and can be formed simultaneously with the semiconductor layer of a transistor. It is desirable because it has certain advantages.

[0192] Note that ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S) nO) and tin cadmium oxide (CTO) are translucent, so the part that transmits light It can be used for various purposes. For example, it can be used as a pixel electrode or a common electrode.

[0193] Furthermore, IZO is desirable because it is easy to etch and process. When you do this, it is less likely that residue will remain. Using IZO as the electrode can cause defects in the liquid crystal elements and light-emitting elements (short circuits, alignment errors, etc.). It can reduce the impact.

[0194] Furthermore, wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc., may have a single-layer structure. It may have a multilayer structure. By using a single-layer structure, wiring, electrodes, conductive layer, conductive film This simplifies the manufacturing process for terminals and other components, reduces the number of days required for the process, and lowers costs. This can be done. Alternatively, by creating a multi-layered structure, the advantages of each material can be utilized. At the same time, it is possible to reduce the disadvantages and form high-performance wiring, electrodes, etc. For example, by incorporating low-resistance materials (such as aluminum) into a multilayer structure, the wiring can be made low. This can increase resistance. Another example is sandwiching a low-heat-resistant material between high-heat-resistant materials. By using a layered structure, the advantages of low heat-resistant materials can be utilized, as well as for wiring, electrodes, etc. The heat resistance can be increased. For example, a layer containing aluminum can be made molybdenum, titanium It is preferable to use a laminated structure in which the material is sandwiched between layers containing neodymium, etc.

[0195] In this case, when wiring, electrodes, etc., come into direct contact with each other, they can negatively affect one another. Example For example, it enters the material, such as one wire or electrode, and changes its properties. This can lead to the product failing to fulfill its original purpose. Another example is forming or manufacturing a high-resistance part. Sometimes problems arise during this process, preventing normal manufacturing. By combining or layering materials, if a highly reactive material is sandwiched or covered with a less reactive material, Good. For example, when connecting ITO and aluminum, the ITO and aluminum It is desirable to sandwich titanium, molybdenum, and neodymium alloys in between. Another example is silicon When connecting silicon and aluminum, titanium and molybdenum should be placed between the silicon and aluminum. It is desirable to sandwich ribdenum and neodymium alloy.

[0196] Furthermore, wiring refers to a structure in which conductive materials are arranged. The shape of the wiring can be linear, or It doesn't have to be a straight line; it can be short. Therefore, the electrodes are included in the wiring.

[0197] In this embodiment, the details described in each figure are the same as those described in other embodiments. In contrast, combinations or substitutions can be freely made as appropriate.

[0198] (Embodiment 6) In this embodiment, an example of an electronic device will be described.

[0199] Figures 12(A) to 12(H) and 13(A) to 13(D) are diagrams showing electronic devices. Yes, these electronic devices consist of a housing 9630, a display unit 9631, a speaker 9633, and an LED. Lamp 9634, operation key 9635, connection terminal 9636, sensor 9637 (force, displacement, position) Location, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time Hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation. It may have a microphone 9638 (including a function for measuring), etc.

[0200] Figure 12(A) shows a mobile computer, and in addition to the above, it includes a switch 9670, It may have an infrared port 9671, etc. Figure 12(B) shows a portable device equipped with a recording medium. This is a type of image playback device (for example, a DVD player), and in addition to the above, a second display It may have a section 9632, a recording medium reading section 9672, etc. Figure 12(C) is a goggle. It is a type display, and in addition to the above, it has a second display unit 9632, a support unit 9673, It may have earphones 9674, etc. Figure 12(D) is a portable gaming machine, as described above. In addition to the above, it may also have a recording medium reading unit 9672, etc. Figure 12(E) shows This is a digital camera with a TV receiving function, and in addition to the above, it has an antenna 9675 and a shutter It may have a touch button 9676, an image receiving unit 9677, etc. Figure 12(F) is a portable It is a type of gaming machine, and in addition to the above, it has a second display unit 9632, a recording medium reading unit 9672, It can have the following. Figure 12(G) is a television receiver, and in addition to the above, it has It may have a tuner, an image processing unit, etc. Figure 12(H) shows a portable television receiver. In addition to the above, it also has a charger 9678 capable of transmitting and receiving signals, etc. Yes, it is possible. Figure 13(A) shows a display, and in addition to the above, there is a support base 9679, etc. It can have the following. Figure 13(B) is a camera, and in addition to the above, it has an external connection port. It may have a 9680, a shutter button 9676, an image receiving unit 9677, etc. Figure 13(C) shows a computer, and in addition to the above, it has a pointing device 96 It may have 81, an external connection port 9680, a reader / writer 9682, etc. (Figure) 13(D) is a mobile phone, and in addition to the above, it includes a transmitter, a receiver, and a mobile phone / mobile phone. It may have a tuner for a 1-segment partial reception service for terminals, etc.

[0201] The electronic devices shown in Figures 12(A) to 12(H) and Figures 13(A) to 13(D) are various It can have various functions. For example, various types of information (still images, videos, text images, etc.) Functions that display information on the display unit, touch panel function, calendar, date or time display, etc. Functions, functions that control processing through various software (programs), wireless communication functions, A function that connects to various computer networks using wireless communication capabilities, and wireless communication capabilities Functions that use to transmit or receive various data, programs recorded on recording media, or It can have functions such as reading data and displaying it on the display unit. Furthermore, multiple In electronic devices having a display unit, one display unit is primarily used to display image information, and another... A function that primarily displays text information on one display unit, or a function that takes parallax into account on multiple display units. It can have functions such as displaying three-dimensional images by displaying images. Furthermore, Electronic devices having an image receiving unit include functions for taking still images, functions for taking videos, and shooting Functions to automatically or manually correct the captured image, and the recording medium (external or camera) on which the captured image is stored. It can have functions such as saving images internally and displaying captured images on the display unit. Furthermore, the electronic devices shown in Figures 12(A) to 12(H) and Figures 13(A) to 13(D) The functions it can possess are not limited to these, and it can have a variety of functions.

[0202] The electronic device described in this embodiment has a display unit for displaying some kind of information. The electronic device is characterized in that the effect of variations in transistor characteristics in the display unit is Because the noise reduction is reduced, it is possible to display a very uniform image.

[0203] Next, we will explain some application examples of semiconductor devices.

[0204] Figure 13(E) shows an example of a semiconductor device being installed as an integral part of a building. ) consists of a housing 9730, a display unit 9731, a remote control device 9732 which is the operating unit, and a speaker 9 Includes 733, etc. The semiconductor equipment is wall-mounted and integrated with the building, and the installation space It can be installed without requiring a large space.

[0205] Figure 13(F) shows another example in which semiconductor equipment is installed within a building and integrated with the building itself. The display panel 9741 is installed together with the unit bath 9742, and the bather This allows viewing of the display panel 9741.

[0206] In this embodiment, walls and a unit bathroom were used as examples of buildings, but the actual form The configuration is not limited to this, and semiconductor devices can be installed in various types of buildings.

[0207] Next, we will show an example in which a semiconductor device is integrated with a mobile device.

[0208] Figure 13(G) shows an example of a semiconductor device installed in an automobile. (Display panel) 9761 is attached to the vehicle body 9762 and is controlled by the movement of the vehicle body or from inside or outside the vehicle body The system can display the entered information on demand. It also includes a navigation function. It's okay to do so.

[0209] Figure 13(H) shows an example of a semiconductor device being integrated with a passenger aircraft. Yes. Figure 13(H) shows a display panel 9782 on the ceiling 9781 above the seats of a passenger airplane. This diagram shows the shape of the unit when installed and in use. The display panel 9782 is located on the ceiling 97 81 and the hinge portion 9783 are attached together, and the extension and retraction of the hinge portion 9783 Passengers will be able to view the display panel 9782. The display panel 9782 can be operated by passengers. It has the function of displaying information by doing so.

[0210] In this embodiment, examples of mobile bodies include automobile bodies and aircraft bodies. However, this is not limited to motorcycles, four-wheeled vehicles (including automobiles, buses, etc.), and trains (monorails). It can be installed on various things, including railroads, railways, ships, etc.

[0211] In this embodiment, the details described in each figure are the same as those described in other embodiments. In contrast, combinations or substitutions can be freely made as appropriate. [Explanation of symbols]

[0212] 101 Transistors 102 Capacitive element 103 Wiring 104 Wiring 105 display elements 106 Wiring 107 Wiring 201 Switch 202 Switch 203 Switch 204 Switch 205 Switch 206 switches 601 Switch 602 switch 603 switch 606 Wiring 901 Switch 101A Transistor 101B Transistor 101M transistor 102A Capacitive element 102B Capacitive element 102M Capacitive element 103M wiring 104M wiring 105M light-emitting element 106M wiring 201M transistor 202M transistors 203M transistor 402A Capacitive element 402B Capacitive element 402C A or capacitive element 601M transistor 602M transistor 606M wiring 606N wiring 606P wiring 606Q Wiring 7001 Transistor 7002 Transistor 7003 Transistor 7004 Transistor 7005 Transistor 7006 Transistor 7011 circuit board 7012 Insulating film 7013 Semiconductor layer 7014 Semiconductor layer 7015 Semiconductor layer 7016 Insulating Film 7017 Gate 7018 Insulating Film 7019 insulating film 7021 Sidewall 7022 Mask 7023 Conductive film 7024 Insulating film 8601 Anode 8602 Cathode 8603 Hole transport region 8604 Electron transport area 8605 Mixed area 8606 area 8607 area 8608 area 8609 area 9601 Display Panel 9602 pixel section 9603 Scan line drive circuit 9604 Signal Line Drive Circuit 9605 Circuit Board 9606 Control Circuit 9607 Signal splitting circuit 9608 Connection Wiring 9611 Tuner 9612 Video signal amplification circuit 9613 Video signal processing circuit 9614 Signal Line Drive Circuit 9615 Audio signal amplification circuit 9616 Audio signal processing circuit 9617 Speaker 9618 Control Circuit 9619 Input section 9621 Display Panel 9622 Control Circuit 9623 Signal splitting circuit 9624 Scan Line Drive Circuit 9630 cabinet 9631 Display section 9632 Display section 9633 Speaker 9634 LED Lamp 9635 Operation Keys 9636 Connection terminal 9637 Sensor 9638 Microphone 9670 Switch 9671 Infrared port 9672 Recording medium reading unit 9673 Support part 9674 Earphones 9675 Antenna 9676 Shutter button 9677 Image receiving unit 9678 charger 9679 Support stand 9680 External connection port 9681 Pointing device 9682 Leader / Writer 9730 cabinet 9731 Display section 9732 Remote control device 9733 Speaker 9741 Display Panel 9742 Unit Bathroom 9761 Display Panel 9762 Car body 9781 Ceiling 9782 Display Panel 9783 Hinge section 1000M pixels 1000N pixels 1000P pixels 1000Q pixels 1001M wiring 1002M wiring 1002N Wiring 1003M wiring 1004M wiring 1005M wiring 1005N Wiring 402AA Capacitive element 402AB Capacitive element

Claims

1. A pixel comprising a first transistor to a sixth transistor, a light-emitting element, a first capacitive element, and a first wiring to a third wiring, The first wiring has the function of supplying a video signal to the pixel, The third wiring has the function of supplying a first potential to the pixel, The first transistor has the function of controlling the magnitude of the current flowing between the second wiring and the light-emitting element according to the potential corresponding to the video signal. Each of the second to sixth transistors has a function as a switch. Either the source or the drain of the second transistor is always in electrical contact with the first wiring. The source or drain of the second transistor is always in electrical contact with the source or drain of the first transistor. Either the source or the drain of the third transistor is always in electrical contact with the second wiring. The source or drain of the third transistor is always in electrical contact with the source or drain of the first transistor. Either the source or drain of the fourth transistor is always in contact with the gate of the first transistor. The source or drain of the fourth transistor is always in electrical contact with the source or drain of the first transistor. The source or drain of the fifth transistor is always in electrical contact with the other source or drain of the first transistor. The source or drain of the fifth transistor is always in electrical contact with the pixel electrode of the light-emitting element. The source or drain of the sixth transistor is always in electrical contact with the other source or drain of the first transistor. The source or drain of the sixth transistor is always in electrical contact with the third wiring. One electrode of the first capacitive element is always in electrical contact with the gate of the first transistor. The other electrode of the first capacitive element is always in electrical contact with the second wiring. When current is supplied to the light-emitting element via the first transistor, the sixth transistor is in a non-conducting state. The second transistor is in a non-conductive state and the sixth transistor is in a conductive state for a period of time. Light-emitting device.

2. The pixel comprises a first transistor to a sixth transistor, a light-emitting element, a first capacitive element, and a first wiring to a third wiring, The first wiring has the function of supplying a video signal to the pixel, The third wiring has the function of supplying a first potential to the pixel, The first transistor has the function of controlling the magnitude of the current flowing between the second wiring and the light-emitting element according to the potential corresponding to the video signal. Each of the second to sixth transistors has a function as a switch. Either the source or the drain of the second transistor is always in electrical contact with the first wiring. The source or drain of the second transistor is always in electrical contact with the source or drain of the first transistor. Either the source or the drain of the third transistor is always in electrical contact with the second wiring. The source or drain of the third transistor is always in electrical contact with the source or drain of the first transistor. Either the source or drain of the fourth transistor is always in contact with the gate of the first transistor. The source or drain of the fourth transistor is always in electrical contact with the source or drain of the first transistor. The source or drain of the fifth transistor is always in electrical contact with the other source or drain of the first transistor. The source or drain of the fifth transistor is always in electrical contact with the pixel electrode of the light-emitting element. The source or drain of the sixth transistor is always in electrical contact with the other source or drain of the first transistor. The source or drain of the sixth transistor is always in electrical contact with the third wiring. One electrode of the first capacitive element is always in electrical contact with the gate of the first transistor. The other electrode of the first capacitive element is always in electrical contact with the second wiring. When current is supplied to the light-emitting element via the first transistor, the sixth transistor is in a non-conducting state. The second transistor is in a non-conductive state and the sixth transistor is in a conductive state for a period of time. During the period in which the video signal is input to the pixel via the second transistor, the sixth transistor does not become conductive. Light-emitting device.

3. In Claim 1 or Claim 2, The first transistor described above is a p-channel type. Light-emitting device.

4. In any one of Claims 1 to 3, The first capacitive element has a plurality of second capacitive elements connected in parallel. Light-emitting device.

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