Indication device

Abstract

Provide a liquid crystal display device with a high aperture ratio. Provide a liquid crystal display device with low power consumption . 【Solution means】A display device having a liquid crystal element, a transistor, a scanning line, and a signal line. The liq uid crystal element has a pixel electrode, a liquid crystal layer, and a common electrode. The scanning line and the signal line are each electrically connected to the transistor. The scanning line and the signal line each have a metal layer. The transistor is electrically connected to the pixel electrode. The semiconductor layer of the transistor has a first metal oxide layer and a second metal oxide layer laminated thereon. The first metal oxide layer has a region with lower crystallinity than the second metal oxide layer. The transistor has a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region have a function of transmitting visible light. The visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.

Description

Technical Field

[0001] One aspect of the present invention relates to a liquid crystal display device, a display module, and an electronic device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. As for the technical field of one aspect of the present invention it may include, for example, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), and their driving methods, or their manufacturing methods.

Background Art

[0003] Most of the flat panel displays such as liquid crystal display devices and light-emitting display devices use transistors composed of silicon semiconductors such as amorphous silicon, single crystal silicon, or polycrystalline silicon formed on a glass substrate. Further, the transistors using the silicon semiconductors are also used in integrated circuits (ICs) and the like.

[0004] In recent years, a technology using a metal oxide showing semiconductor characteristics for transistors instead of silicon semiconductors has been attracting attention. In this specification, a metal oxide showing semiconductor characteristics will be referred to as an oxide semiconductor. For example, in Patent Document 1 and Patent Document 2, transistors using zinc oxide or an In-Ga-Zn-based oxide as an oxide semiconductor are fabricated, and a technology of using the transistors as switching elements of pixels of a display device and the like is disclosed.

Prior Art Documents

Patent Documents

[0005] ​[Patent Document 1] Japanese Patent Publication No. 2007-123861 [Patent Document 2] Japanese Patent Publication No. 2007-96055 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a liquid crystal display device with a high aperture ratio. One aspect of the present invention aims to provide a liquid crystal display device with low power consumption. Alternatively, one aspect of the present invention aims to provide a high-resolution liquid crystal display device. One aspect of the present invention aims to provide a highly reliable liquid crystal display device.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0008] One aspect of the present invention is a display device having liquid crystal elements, transistors, scanning lines, and signal lines. The liquid crystal element has a pixel electrode, a liquid crystal layer, and a common electrode. The scan lines and signal lines are... These are electrically connected to the transistor. The scan lines and signal lines each have a metal layer. The transistor is electrically connected to the pixel electrode. The semiconductor layer of the transistor is It has a first metal oxide layer and a second metal oxide layer laminated together. The first metal oxide layer is It has regions with lower crystallinity than the metal oxide layer 2. The transistor is connected to the pixel electrode. It has a first region that transmits visible light. The pixel electrode, common electrode, and first region are transparent to visible light. It has the ability. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device. ru.

[0009] One aspect of the present invention is a display device having liquid crystal elements, transistors, scanning lines, and signal lines. The liquid crystal element has a pixel electrode, a liquid crystal layer, and a common electrode. The scan lines and signal lines are... These are electrically connected to the transistor. The scan lines and signal lines each have a metal layer. The transistor is electrically connected to the pixel electrode. The transistor has a gate electrode and It comprises an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a pair of electrodes on the semiconductor layer. The semiconductor layer consists of a first metal oxide layer and a second metal oxide layer on the first metal oxide layer. The first metal oxide layer has regions with lower crystallinity than the second metal oxide layer. The transistor has a first region connected to the pixel electrode. Pixel electrode, common electrode, The first region and the liquid crystal element have the function of transmitting visible light. It passes through and is emitted to the outside of the display device.

[0010] The first metal oxide layer and the second metal oxide layer are each independently composed of indium and metal M( M has aluminum, gallium, yttrium, or tin, and zinc. This is preferable. For example, the ratio of the number of atoms of indium, metal M, and zinc is In:M:Zn=4 When x and y are given by :x:y, x is between 1.5 and 2.5 (inclusive), and y is between 2 and 4 (inclusive). For example... If the ratio of the number of atoms of indium, metal M, and zinc is In:M:Zn=5:x:y, x is between 0.5 and 1.5, and y is between 5 and 7.

[0011] The second metal oxide layer preferably has crystalline portions having c-axis orientation.

[0012] The display device having the above configuration may further include a touch sensor. The touch sensor is a liquid It is located on the display side, relative to the crystal elements and transistors.

[0013] It is preferable that the scan lines have portions that overlap with the semiconductor layer.

[0014] Visible light may pass through the first region and then the liquid crystal element in that order and be emitted to the outside of the display device. Alternatively, visible light is transmitted through the liquid crystal element and the first region in that order and emitted to the outside of the display device. That's good too.

[0015] Preferably, the direction in which the scan lines extend intersects with the direction in which the signal lines extend. The direction in which the multiple pixels are arranged preferably intersects with the direction in which the signal lines extend. .

[0016] One aspect of the present invention has a display device having any of the above configurations, and a flexible printed circuit board A board (Flexible printed circuit, hereinafter referred to as FPC) or This is equipped with connectors such as TCP (Tape Carrier Package). Display module, or COG (Chip On Glass) method or COF (C Display modules such as display modules on which ICs are mounted using methods such as hip-on-film. It is.

[0017] One aspect of the present invention includes the above-mentioned display module, an antenna, a battery, a housing, a camera, and a speaker. An electronic device having at least one of a microphone, an audio sensor, or an operating button. [Effects of the Invention]

[0018] According to one aspect of the present invention, a liquid crystal display device with a high aperture ratio can be provided. According to one aspect of the invention, a liquid crystal display device with low power consumption can be provided. Alternatively, According to one aspect of the invention, a high-resolution liquid crystal display device can be provided. In one embodiment, a highly reliable liquid crystal display device can be provided.

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0020] [Figure 1] A perspective view showing an example of a display device. [Figure 2] A cross-sectional view showing an example of a display device. [Figure 3] A cross-sectional view showing an example of a display device. [Figure 4] A top view showing an example of a sub-pixel. [Figure 5] A top view showing an example of a sub-pixel. [Figure 6] A cross-sectional view showing an example of a display device. [Figure 7] A cross-sectional view showing an example of a display device. [Figure 8] A cross-sectional view showing an example of a display device. [Figure 9] A diagram showing examples of pixel arrangement and configuration. [Figure 10] A perspective view showing an example of a display device. [Figure 11] A perspective view showing an example of a display device. [Figure 12] A diagram showing an example of an operating mode. [Figure 13] Block diagram and timing chart of the touch sensor. [Figure 14] Block diagram and timing chart of the display device. [Figure 15] A diagram illustrating the operation of the display unit and touch sensor. [Figure 16] A diagram illustrating the operation of the display unit and touch sensor. [Figure 17] A diagram showing an example of an electronic device. [Figure 18] A diagram showing an example of an electronic device. [Figure 19] A cross-sectional view illustrating the display device of Example 1. [Figure 20] A diagram showing the light transmittance of the stacked structure of the display device of Example 1. [Figure 21] A diagram illustrating the method for manufacturing the display device of Example 2. [Figure 22] A diagram illustrating the method for manufacturing the display device of Example 2. [Figure 23] A diagram showing the light transmittance of the stacked structure of the display device of Example 2. [Modes for carrying out the invention]

[0021] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.

[0022] In the configuration of the invention described below, the same part or part having a similar function is used. The same symbol is used consistently across different drawings, and explanations of its repetition are omitted. When referring to a function, the same hatch pattern may be used, and a specific symbol may not be assigned.

[0023] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0024] Furthermore, the words "membrane" and "layer" may differ depending on the context or situation. And they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to this. Or, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0025] In this specification and elsewhere, "metal oxide" refers to a broad term for metals. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). Oxide semiconductors (also called OS) They are classified into the following categories. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal Oxides are sometimes referred to as oxide semiconductors. Therefore, when referring to an OS FET, Therefore, it can be rephrased as a transistor having a metal oxide or oxide semiconductor.

[0026] Furthermore, in this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called al oxynitride.

[0027] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1 to 11.

[0028] <1. Example of display device configuration 1> First, the display device of this embodiment will be described using Figures 1 to 5.

[0029] The display device of this embodiment has liquid crystal elements and transistors. The liquid crystal elements are pixel electrodes It has a liquid crystal layer and a common electrode. The transistor is electrically connected to the pixel electrode. The semiconductor layer of the transistor has a first metal oxide layer and a second metal oxide layer stacked on top of each other. The first metal oxide layer has regions with lower crystallinity than the second metal oxide layer. The zista has a first region connected to the pixel electrode. Pixel electrode, common electrode, and first The region has the function of transmitting visible light. Visible light passes through the first region and the liquid crystal element. It is ejected to the outside of the display device.

[0030] Alternatively, the display device of this embodiment has a liquid crystal element and a transistor. The liquid crystal element is It has pixel electrodes, a liquid crystal layer, and a common electrode. The transistor is electrically connected to the pixel electrodes. A transistor consists of a gate electrode, an insulating layer on the gate electrode, and a semiconductor layer on the insulating layer. The semiconductor has a pair of electrodes on a semiconductor layer. The semiconductor layer has a first metal oxide layer and a first metal oxide layer The first metal oxide layer has a second metal oxide layer on top of the second metal oxide layer. It has a region with lower crystallinity than the ionized layer. The transistor is connected to the pixel electrode. It has a region. The pixel electrode, common electrode, and first region have the function of transmitting visible light. Visible light passes through the first region and the liquid crystal element and is emitted to the outside of the display device.

[0031] In the display device of this embodiment, the contact portion between the transistor and the pixel electrode transmits visible light. Therefore, the contact portion can be provided in the display area. This allows the pixel aperture to be The efficiency can be increased. The higher the aperture ratio, the higher the light extraction efficiency. If the output efficiency can be increased, the brightness of the backlight unit can be reduced. Therefore, the power consumption of the display device can be reduced. Also, the high resolution of the display device It can be transformed.

[0032] The display device of this embodiment further includes scan lines and signal lines. The scan lines and signal lines are Each is electrically connected to a transistor. The scan line and signal line are connected to a metal layer, respectively. It has a metal layer used for the scan lines and signal lines, thereby reducing the resistance of the scan lines and signal lines. It is possible.

[0033] Furthermore, it is preferable that the scan lines have a portion that overlaps with the channel region of the transistor. Depending on the material used in the channel region of the transistor, when light is irradiated, the transistor The characteristics may vary. The scan line has a portion that overlaps with the channel region of the transistor. This suppresses the illumination of the channel area by external light or backlight. Yes, it is possible. This can improve the reliability of the transistor. Also, one conductive film However, it has both the function of a scan line and the function of a gate (or back gate). It's okay to be there.

[0034] In one embodiment of the present invention, transistors, wiring, capacitive elements, etc., have the following translucent semiconductor Conductive materials and conductive materials can be used.

[0035] The semiconductor film in a transistor can be formed using a translucent semiconductor material. It is possible. Translucent semiconductor materials include metal oxides or oxide semiconductors (Oxid Examples include (e Semiconductor). Oxide semiconductors have at least index It is preferable that it contains um (In). In particular, it is preferable that it contains indium (In) and zinc (Zn). This is preferable. In addition to those, aluminum (Al), gallium (G), and t Rium (Y), tin (Sn), copper, vanadium, beryllium, boron, silicon, titanium Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neo One of the following: gymite, hafnium, tantalum, tungsten, or magnesium. , or may include multiple types.

[0036] The conductive film on a transistor can be formed using a light-transmitting conductive material. The light-transmitting conductive material is one selected from indium, zinc, and tin, or It is preferable to include multiple types. Specifically, In oxide, In-Sn oxide (ITO:I Also known as ndium tin oxide, In-Zn oxide, In-W oxide, In -W-Zn oxide, In-Ti oxide, In-Sn-Ti oxide, In-Sn-Si oxide Examples include Zn oxides and Ga-Zn oxides.

[0037] Furthermore, the conductive film of the transistor is made to contain impurity elements to reduce its resistance. Oxide semiconductors may also be used. The oxide semiconductor with reduced resistance is an oxide conductor (OC: It can be called an Oxide Conductor.

[0038] For example, in oxide conductors, oxygen vacancies are formed in the oxide semiconductor, and hydrogen is added to these oxygen vacancies. This causes a donor level to form near the conduction band. As a result, the oxide semiconductor becomes highly conductive and turns into a conductor.

[0039] Note that oxide semiconductors have a large energy gap (for example, an energy gap of 2 (It is above 0.5 eV) and therefore has light transmission to visible light. Also, as mentioned above, oxidation A conductor is an oxide semiconductor that has a donor level near the conduction band. Therefore, oxide Conductors exhibit little influence from absorption due to donor levels, and their absorption is similar to that of oxide semiconductors for visible light. It has light-transmitting properties.

[0040] Furthermore, oxide conductors contain one or more metal elements found in the semiconductor film of a transistor. It is preferable to have. An oxide semiconductor having the same metal element constitutes a transistor. By using it in two or more layers, the manufacturing equipment (e.g., film deposition equipment, processing equipment, etc.) can be reduced to two or more. Since it can be used in common in the processes described above, manufacturing costs can be reduced.

[0041] Figure 1 is a perspective view of the display device 100A. In Figure 1, for clarity, the polarizing plate 130, etc. The components are omitted in the illustration. In Figure 1, the substrate 61 is shown by a dashed line. Figure 2(A) and Figure 3(A) is a cross-sectional view of the display device 100A. Figure 2(B) shows the display device 100A. Figure 2(C) is an enlarged view of transistor 201, and shows the transistors of the display device 100A. This is an enlarged view of transistor 206. Figure 3(B) shows the transistors in the display device 100A. This is a variation of 206.

[0042] The display device 100A has a display unit 62 and a drive circuit unit 64. The display device 100A has, FPC72 and IC73 are implemented.

[0043] The display unit 62 has multiple pixels and has the function of displaying an image.

[0044] A pixel has multiple subpixels. For example, a subpixel that exhibits red light, a subpixel that exhibits green light, and Each pixel is composed of sub-pixels that exhibit blue light, so the display unit 62 displays in full color. — can be displayed. Note that the colors exhibited by subpixels are not limited to red, green, and blue. For example, subpixels exhibiting colors such as white, yellow, magenta, or cyan may be used for the pixels. Good. Note that in this specification, sub-pixels may sometimes be simply referred to as pixels.

[0045] The display device 100A has one or both of the scanning line drive circuit and the signal line drive circuit. It may be so. Or, it may not have both a scan line drive circuit and a signal line drive circuit. i. If the display device 100A has a sensor such as a touch sensor, the display device 100A will It may have a sensor drive circuit. In this embodiment, the drive circuit section 64 is a scan line An example with a drive circuit is shown. The scan line drive circuit sends a scan signal to the scan lines of the display unit 62. It has the function to output [something].

[0046] In the display device 100A, IC73 is mounted on the circuit board 51 using a mounting method such as the COG method. IC73 is used, for example, in signal line drive circuits, scan line drive circuits, and sensor drive circuits. It has one or more roads.

[0047] The display device 100A is electrically connected to the FPC72. Through the FPC72, Signals and power are supplied to C73 and the drive circuit section 64 from an external source. Also, FPC72 Through this, signals can be output from IC73 to the outside.

[0048] The FPC72 may have an IC mounted on it. For example, the FPC72 may have a signal line drive circuit. An IC having one or more of the following: a path, a scan line drive circuit, and a sensor drive circuit is mounted. It's fine if you do that.

[0049] Signals and power are supplied to the display unit 62 and the drive circuit unit 64 from the wiring 65. The power and frequency are input to wiring 65 from IC73 or from an external source via FPC72. ru.

[0050] Figures 2(A) and 3(A) are cross-sectional views including the display unit 62, the drive circuit unit 64, and the wiring 65. In the cross-sectional views of the display device shown in Figure 2(A) and subsequent figures, the display unit 62 is defined as one subpixel. This shows the display area 68 and the non-display area 66 located around it.

[0051] In Figure 2(A), the polarizing plate 130 is located on the substrate 61 side, and the backlight unit is located on the substrate 51 side. This is an example of the position of (not shown). The light 45 from the backlight unit first, It is incident on the plate 51, and the contact area of ​​the transistor 206 and the pixel electrode 111, the liquid crystal element 40, The colored layer 131, substrate 61, and polarizing plate 130 are transmitted in that order, and the light is taken to the outside of the display device 100A. It will be released.

[0052] In Figure 3(A), the polarizing plate 130 is located on the substrate 51 side, and the backlight unit is located on the substrate 61 side. This is an example of the position of (not shown). The light 45 from the backlight unit first, The light is incident on the plate 61, and the colored layer 131, liquid crystal element 40, transistor 206 and pixel electrode 111 The light passes through the contact portion, substrate 51, and polarizing plate 130 in that order, and is taken to the outside of the display device 100A. It will be released.

[0053] Thus, the display device of this embodiment does not require changing the configuration between substrate 51 and substrate 61. Both the circuit board 51 and the circuit board 61 can be designated as the display side. The choice of configuration will be determined appropriately depending on the arrangement of the backlight unit, polarizing plate, touch sensor, etc. It is possible.

[0054] In the following explanation, we will use Figure 2(A) as an example, but the same applies to Figure 3(A).

[0055] Display device 100A is an example of a transmissive liquid crystal display device using a transverse electric field type liquid crystal element. .

[0056] As shown in Figure 2(A), the display device 100A consists of a substrate 51, a transistor 201, and a transistor Zistor 206, liquid crystal element 40, alignment film 133a, alignment film 133b, connecting part 204, adhesive layer 141, colored layer 131, light-shielding layer 132, overcoat 121, substrate 61, and polarizing plate 1 It has 30 units.

[0057] A transistor 206 is provided in the non-display area 66. Figure 2(C) shows the transistor A magnified view of the Ta206 is shown.

[0058] Transistor 206 consists of a gate 221, an insulating layer 213, a conductive layer 222a, and a conductive layer 222c , and also having a semiconductor layer 231.

[0059] The gate 221 overlaps with the semiconductor layer 231 via the insulating layer 213. The insulating layer 213 is the gate It functions as an insulating layer. Conductive layer 222a and conductive layer 222c are semiconductor layer 2 It is connected to 31.

[0060] In Figure 2(A), the pixel electrode 111 of the liquid crystal element 40 is connected via the conductive layer 222c. It is electrically connected to the semiconductor layer 231.

[0061] The conductive layer 222c is formed using a material that transmits visible light. This allows the pixel electrode 1 The contact portion between 11 and the transistor can be provided in the display area 68. This allows for an increase in the aperture ratio of subpixels. Furthermore, it can reduce the power consumption of the display device. Cut.

[0062] As shown in Figure 2(C), the semiconductor layer 231 consists of a first metal oxide layer 231a and a first gold It comprises a second metal oxide layer 231b on a metal oxide layer 231a.

[0063] The first metal oxide layer 231a and the second metal oxide layer 231b are made of In and M(M) respectively. It is preferable that it contains Ga, Al, Y, or Sn, and Zn.

[0064] The first metal oxide layer 231a and the second metal oxide layer 231b are, respectively, based on the atomic ratio of In. If there is a region where the atomic ratio of M is greater, it can increase the field-effect mobility of the transistor. This is preferable. For example, the first metal oxide layer 231a and the second metal oxide layer 23 The ratio of the number of In, M, and Zn atoms in 1b is In:M:Zn = 4:2:3, respectively. It is preferable that it be in its vicinity, or In:M:Zn=5:1:7 or in its vicinity. Here, "neighborhood" means that when In is 4, M is between 1.5 and 2.5, and Zn is 2 or greater. If the element is 4 or less, and In is 5, then M is between 0.5 and 1.5, and Zn is between 5 and 7. This includes the following. Thus, the first metal oxide layer 231a and the second metal oxide layer 231b By using roughly the same composition, it can be formed using the same sputtering target, thus manufacturing Manufacturing costs can be reduced.

[0065] The first metal oxide layer 231a and the second metal oxide layer 231b each have different compositions A film deposited using a target can also be used, but in particular, if a target of the same composition is used, It is preferable to use a laminated film that is continuously deposited without exposure to air. In addition to being able to be processed with a film deposition apparatus, the first metal oxide layer 231a and the second metal oxide layer 23 This can suppress the retention of impurities during step 1b.

[0066] The second metal oxide layer 231b has regions with higher crystallinity than the first metal oxide layer 231a. It is preferable that it contains the second metal oxide layer 231b, the first metal oxide A film with better etching resistance than layer 231a can be created. Therefore, conductive layer 2 When processing 22a and the conductive layer 222c, the second metal oxide layer 231b is etched This prevents it from disappearing. Therefore, as shown in Figures 2(A) and (B) This makes it possible to realize a transistor with a channel etch structure. Furthermore, the transistor A highly crystalline film is used for the second metal oxide layer 231b located on the back channel side. Therefore, impurities that could diffuse into the first metal oxide layer 231a on the gate 221 side can be reduced. This enables the creation of highly reliable transistors.

[0067] Furthermore, the first metal oxide layer 231a has a lower crystallinity than the second metal oxide layer 231b. By using a film that includes a region, oxygen can easily diffuse into the first metal oxide layer 231a. This makes it possible to reduce the proportion of oxygen vacancies in the first metal oxide layer 231a. In particular, The first metal oxide layer 231a is located on the side closer to the gate 221, and mainly channels are formed there. Because this layer is easily damaged, using such a film can realize highly reliable transistors. can.

[0068] The first metal oxide layer 231a and the second metal oxide layer 231b are formed, for example, under different deposition conditions. By doing so, they can be made differently. For example, the first metal oxide layer 231a and the second gold The flow rate of oxygen gas in the film deposition gas can be made different for the oxide layer 231b and the other oxide layer.

[0069] At this time, the film formation conditions for the first metal oxide layer 231a are the total gas flow rate of the oxygen gas. The proportion (also called the oxygen flow rate ratio) is 0% to 30%, preferably 5% to 15%. The oxygen flow rate ratio described above is used to determine the crystallinity of the first metal oxide layer 231a. It can be lowered.

[0070] On the other hand, as a film deposition condition for the second metal oxide layer 231b, the oxygen flow rate ratio was set to be greater than 30%. 100% or less, preferably 50% to 100%, more preferably 70% to 100% The oxygen flow rate ratio described above is used to determine the crystallinity of the second metal oxide layer 231b. It can be made higher.

[0071] The substrate temperature during the formation of the first metal oxide layer 231a and the second metal oxide layer 231b is as follows: A temperature of 25°C or higher and 200°C or lower is preferred, and a temperature of 130°C or higher and 130°C or lower is more preferred. By keeping the substrate temperature within the above range, when using a large-area glass substrate, the bending of the substrate and This can suppress distortion. Here, the first metal oxide layer 231a and the second metal oxide By keeping the substrate temperature the same during film formation as that of material layer 231b, productivity can be increased. Furthermore, for example, when forming a film between the first metal oxide layer 231a and the second metal oxide layer 231b When varying the substrate temperature, increase the substrate temperature during the deposition of the second metal oxide layer 231b. This makes it possible to further enhance the crystallinity of the second metal oxide layer 231b.

[0072] For example, the first metal oxide layer 231a contains CAC-OS (Cloud-Aligned Using a composite oxide semiconductor film, the second metal CAAC-OS (c-axis-aligned crystal It is preferable to use a line oxide semiconductor film.

[0073] The conductive layer used for gate 221 may also function as a scan line. That is, one The conductive layer may have functions as both a scan line and a gate 221. Furthermore, the conductive layer used in conductive layer 222a may also have the function of a signal line. Even if one conductive layer has both the function of a signal line and the function of conductive layer 222a Good. It is preferable that the resistance of the conductive layer, which functions as a scan line or signal line, is sufficiently low. Therefore, the conductive layer that functions as a scanning line or signal line is formed using metal, alloy, etc. Preferably, the conductive layer that functions as a scan line or signal line has the function of blocking visible light. Materials that can be used may also be used.

[0074] Specifically, conductive materials that transmit visible light are different from conductive materials that block visible light, such as copper and aluminum. It may have a higher resistivity compared to other materials. Therefore, bus lines such as scan lines and signal lines To prevent signal delay, the system uses conductive materials (metallic materials) that block visible light with low resistivity. It is preferable to form it in this way. However, the size of the pixels, the width of the bus lines, and the thickness of the bus lines may vary. Depending on the circumstances, a conductive material that transmits visible light can be used in the bus line.

[0075] By using a conductive layer that blocks visible light on the gate 221, the light from the backlight reaches the semiconductor layer 231. This can suppress irradiation. In this way, the semiconductor layer 231 is made a conductive layer that blocks visible light and When stacked, the characteristic fluctuations of the transistor caused by light can be suppressed. This can increase reliability.

[0076] A light-shielding layer 132 is provided on the substrate 61 side of the semiconductor layer 231, and on the substrate 51 side of the semiconductor layer 231 Furthermore, a gate 221 that blocks visible light is provided, so that the ambient light and backlight light are halved. This can suppress irradiation of the conductive layer 231.

[0077] Here, Figure 3(B) shows a modified version of transistor 206. In Figure 3(B), the transistor This shows an example where a portion of the semiconductor layer 231 of transistor 206 is located in the display area 68. The semiconductor layer is made of silicon, typically amorphous silicon, or low-temperature polysilicon. When using this method, the semiconductor layer absorbs a portion of the visible light, so light is transmitted through the semiconductor layer. It is difficult to extract. Also, if the silicon contains impurities such as phosphorus and boron, the permeability will be affected. The phototability may decrease further. Therefore, the low-resistance region formed in the silicon may be transmitted. It can be more difficult to extract light by passing it through. However, in one aspect of the present invention Both oxide semiconductors (OS) and oxide conductors (OC) are transparent to visible light. Therefore, the aperture ratio of pixels or sub-pixels can be improved.

[0078] The transistor 206 is covered by insulating layers 212, 214, and 215. Furthermore, the insulating layer 212 and the insulating layer 214 are considered to be components of the transistor 206. It can also do this. Transistors suppress the diffusion of impurities into the semiconductor that makes up the transistor. It is preferable that it is covered with an insulating layer that provides the desired effect. The insulating layer 215 is a planarizing layer. It is possible.

[0079] It is preferable that the insulating layer 212 and the insulating layer 213 each have an excess oxygen region. The edge layer 212 and the insulating layer 213 have excess oxygen regions, so excess oxygen is present in the semiconductor layer 231. It can supply elements. It can compensate for oxygen vacancies that may form in the semiconductor layer 231 with excess oxygen. Because it can be filled, it can provide a highly reliable transistor.

[0080] As the insulating layer 212, a silicon oxide film or silicon oxide nitride film deposited in an oxygen-containing atmosphere is used. It is preferable to use an oxide insulating film such as a film. Furthermore, the silicon oxide film or oxidized nitride film An insulating layer 214, such as a silicon nitride film, is used on the silicon film as an insulating layer that is resistant to oxygen diffusion and permeation. It is preferable to form a film. The oxide insulating film formed in an oxygen-containing atmosphere is heated This can be used to create an insulating film that easily releases a large amount of oxygen. By performing a heat treatment on a laminated structure consisting of an insulating film and an insulating film that is resistant to oxygen diffusion and permeability, This allows oxygen to be supplied to the semiconductor layer 231. As a result, oxygen in the semiconductor layer 231 This process repairs defects and defects at the interface between the semiconductor layer 231 and the insulating layer 212, thereby reducing the defect level density. This makes it possible to create an extremely reliable display device.

[0081] A liquid crystal element 40 is provided in the display area 68. The liquid crystal element 40 is FFS (Frin This is a liquid crystal element to which the Field Switching (GE) mode is applied.

[0082] The liquid crystal element 40 has a pixel electrode 111, a common electrode 112, and a liquid crystal layer 113. The electric field generated between the electrode 111 and the common electrode 112 controls the orientation of the liquid crystal layer 113. This is possible. The liquid crystal layer 113 is located between the alignment layer 133a and the alignment layer 133b.

[0083] The common electrode 112 has a comb-like top surface shape (also called a planar shape) or is provided with slits. It may have a top surface shape. In Figures 2(A) and 3(A), the display area of ​​one subpixel An example is shown in which one opening of the common electrode 112 is provided in region 68. The common electrode 112 has, One or more apertures can be provided. With the increasing resolution of display devices, one subpixel The area of ​​the display area 68 becomes smaller. Therefore, the number of openings provided in the common electrode 112 is limited to multiple. It is not possible to have only one, and it can be made into one. In other words, in a high-resolution display device, a pixel (sub-image) Because the area of ​​the element is small, even if there is only one aperture of the common electrode 112, the entire display area of ​​the subpixel is visible. It is possible to generate a sufficient electric field to orient the liquid crystals throughout the body.

[0084] An insulating layer 220 is provided between the pixel electrode 111 and the common electrode 112. 11 has a portion that overlaps with the common electrode 112 via the insulating layer 220. Also, pixel electrode 1 In the region where 11 and the colored layer 131 overlap, a common electrode 112 is placed on the pixel electrode 111. It has parts that are not included.

[0085] It is preferable to provide an alignment film that is in contact with the liquid crystal layer 113. The alignment film adjusts the orientation of the liquid crystal layer 113. It can be controlled. In the display device 100A, the common electrode 112 and the insulating layer 220 and liquid crystal The alignment film 133a is located between layer 113 and the overcoat 121 and the liquid crystal layer 113. The orientation film 133b is located there.

[0086] Liquid crystal materials include positive-type liquid crystal materials, where the dielectric anisotropy (Δε) is positive, and negative-type liquid crystal materials, where the dielectric anisotropy (Δε) is negative. There are two liquid crystal materials. In one aspect of the present invention, either material can be used, and the applicable model The optimal liquid crystal material can be used depending on the code and design.

[0087] In one aspect of the present invention, it is preferable to use a negative-type liquid crystal material. In a negative-type liquid crystal, The effects of the damn electric effect can be suppressed, and the transmittance is affected by the polarity of the voltage applied to the liquid crystal layer. The difference is almost negligible. Therefore, the flicker is not visible to the user of the display device. It can be suppressed. The flexoelectric effect is mainly due to molecular shape and orientational distortion. This is a phenomenon in which polarization occurs. Negative-type liquid crystal materials exhibit orientational distortion due to spreading deformation and bending deformation. It's difficult.

[0088] In this example, a liquid crystal element 40 with FFS mode applied was used, but this is not limited to this. It is not possible to use liquid crystal elements to which various modes are applied. For example, VA (Ver (Critical Alignment) mode, TN (Twisted Nematic) mode , IPS (In-Plane-Switching) mode, ASM (Axiall y Symmetric aligned Micro-cell) mode, OCB(O (Phytically Compensated Birefringence) mode, F LC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, EC B(Electrically Controlled Birefringence) Use a liquid crystal element to which modes such as VA-IPS mode and guest host mode are applied. It is possible.

[0089] Furthermore, the display device 100A may be a normally black type liquid crystal display device, for example, a vertically aligned (VA) liquid crystal display device. A transmissive liquid crystal display device employing the ) mode may also be used. As for the vertical alignment mode, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ASV Features such as (Advanced Super View) mode can be used.

[0090] Furthermore, a liquid crystal element is an element that controls the transmission or non-transmission of light through the optical modulation effect of liquid crystals. Yes. The optical modulation effect of liquid crystals is due to the electric field acting on the liquid crystal (horizontal electric field, vertical electric field or It is controlled by an electric field (including one in an oblique direction). As for the liquid crystal used in the liquid crystal element, Thermo ropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC) Dispersed Liquid Crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal Crystals and the like can be used. Depending on the conditions, these liquid crystal materials can form a cholesteric phase, smear crystals, etc. It exhibits phases such as the kuttic phase, cubic phase, chiral nematic phase, and isotropic phase.

[0091] Furthermore, when employing a transverse electric field method, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is one of the liquid crystal phases, and as the temperature of cholesteric liquid crystal is increased, the cholesteric phase This phase appears just before the transition from the qua phase to the isotropic phase. The blue phase only appears within a narrow temperature range. Therefore, to improve the temperature range, a liquid crystal composition mixed with 5% or more by weight of chiral agent was used. The material is used in the liquid crystal layer 113. The liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent is used. It exhibits a short response time and optical isotropy. Furthermore, it contains a liquid crystal exhibiting a blue phase and a chiral agent. The crystal composition does not require orientation treatment and has low viewing angle dependence. Furthermore, it does not require the application of an orientation film. Since it is good, rubbing treatment is unnecessary, thus eliminating electrostatic discharge damage caused by rubbing treatment. This can prevent defects or damage to liquid crystal displays during the manufacturing process. Cut.

[0092] Since the display device 100A is a transmissive liquid crystal display device, the pixel electrode 111 and common electrode 1 Both of 12 use a conductive material that transmits visible light. Also, transistor 206 has One or more of the conductive layers use a conductive material that transmits visible light. This allows for display At least a portion of the transistor 206 can be provided in region 68. Figure 2(A) (B) gives an example of the case where a semiconductor material that transmits visible light is used for the conductive layer 222c. explain.

[0093] Examples of conductive materials that transmit visible light include indium (In), zinc (Zn), and tin. It is preferable to use a material containing one or more selected elements from (Sn). Specifically, indioxide Contains um, indium tin oxide (ITO), indium zinc oxide, and tungsten oxide. Indium oxide, indium zinc oxide containing tungsten oxide, and titanium oxide containing Indium oxide, indium tin oxide containing titanium oxide, indium tin oxide containing silicon oxide Examples include tin oxide (ITSO), zinc oxide, and zinc oxide containing gallium. A film containing graphene can also be used. A film containing graphene is, for example, graphene oxide. A film containing this can be formed by reduction.

[0094] One or more of the conductive layer 222c, pixel electrode 111, and common electrode 112 are oxide It is preferable to use a conductive layer. The oxide conductive layer is the semiconductor layer 231 of transistor 206. It is preferable that the conductive layer 222c contains one or more types of metallic elements. For example, the conductive layer 222c is It is preferable to contain rinder, and In, M (where M is Al, Ti, Ga, Y, Zr, La, C) It is even more preferable that the oxide film contains e, Nd, Sn, or Hf, and Zn. Therefore, it is preferable that the pixel electrode 111 and the common electrode 112 each contain indium. In, M (where M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, or Hf) It is even more preferable that the film is an oxide film containing Zn.

[0095] One or more of the conductive layer 222c, the pixel electrode 111, and the common electrode 112 are oxidized. It may also be formed using a material semiconductor. An oxide semiconductor having the same metal element can be used for a display device. By using it in two or more of the constituent layers, it can be used in manufacturing equipment (e.g., film deposition equipment, processing equipment, etc.) Since it can be used in common across two or more processes, manufacturing costs can be reduced. ru.

[0096] Oxide semiconductors have at least one of the following characteristics: oxygen vacancies in the film and the concentration of impurities such as hydrogen and water in the film. On the one hand, it is a semiconductor material whose resistance can be controlled. Therefore, oxide semiconductors A treatment that increases at least one of oxygen deficiency and impurity concentration in the layer, or oxygen deficiency and impurity By selecting a treatment that reduces at least one of the substance concentrations, the oxide conductive layer can be improved. The resistivity can be controlled.

[0097] Furthermore, the oxide conductive layer formed using the oxide semiconductor layer has a carrier density of Highly resistive, low-resistance oxide semiconductor layer, conductive oxide semiconductor layer, or highly conductive oxide It can also be called a material semiconductor layer.

[0098] Furthermore, by forming the oxide semiconductor layer and the oxide conductive layer with the same metal element, manufacturing costs can be reduced. This can be reduced. For example, by using metal oxide targets with the same metal composition. This can reduce manufacturing costs. Also, targeting metal oxides with the same metal composition By using this method, etching gas or etching is used when processing oxide semiconductor layers. The same liquid can be used for both. However, the oxide semiconductor layer and the oxide conductive layer must be the same. Even if they contain the same metal elements, their composition may differ. For example, during the manufacturing process of a display device... In some cases, metal elements may be removed from the film, resulting in a different metallic composition.

[0099] For example, if the insulating layer 212 is a silicon nitride film containing hydrogen, and the conductive layer 222c is an oxide semiconductor When this is used, the hydrogen supplied from the insulating layer 212 increases the conductivity of the oxide semiconductor. This is possible. For example, if a silicon nitride film containing hydrogen is used for the insulating layer 220, the pixel electrode 1 When an oxide semiconductor is used in 11, the hydrogen supplied from the insulating layer 220 causes the oxide semiconductor It can increase the body's conductivity.

[0100] On the substrate 61 side of the liquid crystal layer 113 of the display device 100A, there is a coloring layer 131 and a light-shielding layer 13 2 is provided. The colored layer 131 is at least the portion that overlaps with the display area 68 of the subpixel. It is located there. The non-display area 66 of the pixel (sub-pixel) is provided with a light-shielding layer 132. The light-shielding layer 132 overlaps with at least a portion of the transistor 206.

[0101] Between the colored layer 131 and the light-shielding layer 132 and the liquid crystal layer 113, there is an overcoat 121. It is preferable to provide it. The overcoat 121 is included in the colored layer 131 and the light-shielding layer 132, etc. This can suppress the diffusion of impurities into the liquid crystal layer 113.

[0102] Substrates 51 and 61 are bonded together by an adhesive layer 141. The liquid crystal layer 113 is sealed in the region surrounded by 1 and the adhesive layer 141.

[0103] When the display device 100A is to function as a transmissive liquid crystal display device, the polarizing plate is placed in the display unit 6 Two are placed so as to sandwich 2. In Figure 2(A), the polarizing plate 130 on the substrate 61 side is shown. The light 45 from the backlight, which is positioned outside the polarizing plate provided on the substrate 51 side, The light is incident through a polarizing plate. At this time, the voltage applied between the pixel electrode 111 and the common electrode 112 This allows for the control of the orientation of the liquid crystal layer 113 and the control of the optical modulation of light. The intensity of the light emitted through the polarizing plate 130 can be controlled. Also, the incident light is Because light outside of a specific wavelength range is absorbed by the color layer 131, the emitted light is, for example, red. It emits light that is either blue or green in color.

[0104] In addition to polarizing plates, circular polarizing plates can also be used, for example. Alternatively, a device consisting of a linear polarizer and a quarter-wavelength phase difference plate can be used. This reduces the viewing angle dependency of the display on the display device.

[0105] The drive circuit section 64 has a transistor 201. Figure 2(B) shows the transistor 201. A magnified view is shown.

[0106] Transistor 201 consists of a gate 221, an insulating layer 213, a semiconductor layer 231, and a conductive layer 222a. , and conductive layer 222b. Of conductive layer 222a and conductive layer 222b, one is so One functions as a suction layer and the other as a drain. Conductive layer 222a and conductive layer 222b are Each of these is electrically connected to the semiconductor layer 231.

[0107] As shown in Figure 2(B), the semiconductor layer 231 consists of a first metal oxide layer 231a and a first gold The semiconductor layer 231 has a second metal oxide layer 231b on a metal oxide layer 231a. For details, please refer to the description of transistor 206.

[0108] The transistors provided in the drive circuit section 64 do not need to have the function of transmitting visible light. Therefore, conductive layer 222a and conductive layer 222b are made in the same process using the same material (preferably Alternatively, it can be formed using materials with low resistivity, such as metals.

[0109] At connection point 204, the wiring 65 and the conductive layer 251 are connected to each other, and the conductive layer 251 and the connector 24 2 are connected to each other. In other words, at connection point 204, the wiring 65 is connected to the conductive layer 251. It is electrically connected to the FPC72 via body 242. With this configuration, Signals and power can be supplied from FPC72 to wiring 65.

[0110] Wiring 65 is connected to the conductive layers 222a and 222b of transistor 201, and the transistor It can be formed using the same material and process as the conductive layer 222a of 206. Layer 251 is formed using the same material and process as the pixel electrode 111 of the liquid crystal element 40. This is possible. In this way, the conductive layer constituting the connection part 204 is connected to the display part 62 and the drive circuit part If the conductive layer used in 64 is manufactured using the same material and process, it will prevent an increase in the number of steps. It is desirable.

[0111] Transistors 201 and 206 may have the same structure or different structures. Furthermore, the transistors in the drive circuit section 64 and the transistors in the display section 62 are the same. It may be a single structure or a different structure. Also, the drive circuit section 64 may have multiple structures. It may have a transistor, or the display unit 62 may have transistors of multiple structures. This may also be the case. For example, the shift register circuit, buffer circuit and storage of the scan line drive circuit. Transistors in which two gates are electrically connected to one or more circuits within a protection circuit. It is preferable to use a sta.

[0112] [Example of sub-pixel configuration] Figure 4 is a top view of a subpixel to which one aspect of the present invention is applied. Figure 5 is a top view of a comparative subpixel. This is a view drawing.

[0113] Although there will be some repetition, first, regarding the characteristics of the pixels (sub-pixels) in one aspect of the present invention... I will explain.

[0114] A pixel is composed of transistors, capacitors, scan lines, and signal lines, etc. It is often formed using a metal film with low resistivity. Because the metal film does not transmit light, The portion formed using the film is excluded from the display area, resulting in a smaller pixel aperture ratio. In particular, the decrease in aperture ratio becomes more pronounced with increasing resolution. When this decreases, it becomes necessary to increase the backlight's brightness and contrast. This is necessary and leads to an increase in backlight power consumption.

[0115] Therefore, in one aspect of the present invention, a transistor, a capacitor, wiring, and a capacitor are provided in the pixel. One or more of the tactile components will be configured to transmit visible light. Specifically, oxidation These components are formed using materials that transmit visible light, such as semiconductors and oxide conductors. The components provided in the pixels transmit visible light, thus improving the aperture ratio and backlight This will enable a reduction in power consumption. Note that the scan lines, signal lines, power lines, and peripheral circuits are as follows: Metal materials are used to reduce resistance. In this way, materials are selected according to function to create conductive films. It is preferable to produce them separately.

[0116] By using visible light-transmitting materials such as oxide semiconductors and oxide conductors, various structures can be created. Rangitors can be fabricated. Unlike silicon, oxide semiconductors do not contain impurities. Even when modified to reduce resistance, it retains the characteristic of being translucent to visible light.

[0117] Figures 4 and 5 show a sub-liquid crystal element having a vertical electric field mode such as TN mode or VA mode. Figure 4 shows a top view of a pixel. Figure 5 shows a top view of a sub-pixel to which one embodiment of the present invention is applied. This is a top view of the sub-pixels for comparison.

[0118] FIG. 4(A) and FIG. 5(A) are top views of the stack from gate 223 to pixel electrode 111 among the sub-pixels, as viewed from the pixel electrode 111 side. In FIGS. 4(A) and 5(A), the display area 68 of the sub-pixel is indicated by a thick dotted line frame. FIGS. 4(B) and 5(B) are top views of the stack structure of FIG. 4(A) or FIG. 5(A) excluding the pixel electrode 111, respectively. The transistors shown in FIGS. 4 and 5 have gates provided above and below the channel. Gate 221 and gate 223 are electrically connected. A transistor configured such that two gates are electrically connected can increase the field-effect mobility and increase the on-current as compared with other transistors. As a result, a circuit capable of high-speed operation can be fabricated. Furthermore, the occupied area of the circuit portion can be reduced. By applying a transistor with a large on-current, even if the display device is enlarged or the definition is increased and the number of wirings increases, it is possible to reduce the signal delay in each wiring and suppress display unevenness. Also, by applying such a configuration, a highly reliable transistor can be realized. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like.

[0119] The transistors shown in FIGS. 4 and 5 have gates provided above and below the channel.

[0120] Gate 221 and gate 223 are electrically connected. A transistor configured such that two gates are electrically connected can increase the field-effect mobility and increase the on-current as compared with other transistors. As a result, a circuit capable of high-speed operation can be fabricated. Furthermore, the occupied area of the circuit portion can be reduced. By applying a transistor with a large on-current, even if the display device is enlarged or the definition is increased and the number of wirings increases, it is possible to reduce the signal delay in each wiring and suppress display unevenness. Also, by applying such a configuration, a highly reliable transistor can be realized. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like.

[0121] In FIGS. 4 and 5, it can be said that one conductive layer has the function of the scanning line 228 and the function of the gate 223. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. Among gate 221 and gate 223, the one with lower resistance is preferably the conductive layer that also functions as the scanning line. The resistance of the conductive layer that functions as the scanning line 228 is preferably sufficiently low. Therefore, the conductive layer that functions as the scanning line 228 is preferably formed using a metal, an alloy, or the like. The conductive layer that functions as the scanning line 228 Materials that have the function of blocking visible light may be used.

[0122] In Figures 4 and 5, one conductive layer functions as a signal line 229 and is connected to conductive layer 222a. It can also be said that it has the function of being a signal line 229. The resistance of the conductive layer that functions as a signal line 229 is sufficiently low. It is preferable that the conductive layer that functions as the signal line 229 is made of metal, alloy, etc. It is preferable that it be formed in this way. The conductive layer that functions as the signal line 229 has a mechanism that blocks visible light. Materials with properties may be used.

[0123] Gates 221 and 223 are each provided with a single layer of either a metallic material or an oxide conductor, Both can be used stacked together. For example, of gate 221 and gate 223, An oxide conductor may be used on one side, and a metallic material on the other.

[0124] The transistor uses an oxide semiconductor layer as the semiconductor layer, with gates 221 and 223 Of these, at least one can be configured to use an oxide conductive layer. It is preferable to form the oxide semiconductor layer and the oxide conductive layer using an oxide semiconductor.

[0125] Figures 4 and 5 show examples in which capacitance lines 244 are provided in subpixels. Capacitance lines 244 are The conductive layer (e.g., gate 221) of the transistor is formed using the same material and process. It is electrically connected to the conductive layer. In Figure 4, it is superimposed on capacitance line 244 and transmits visible light. A conductive layer 222c is provided. In Figure 5, the conductive layer overlaps with the capacitance line 244 to block visible light. A 222b is provided. In Figure 4, the conductive layer 222c is connected to the pixel electrode 111. In Figure 5, the conductive layer 222b is connected to the pixel electrode 111.

[0126] The configuration shown in FIG. 4 can provide a contact portion of at least a part of the capacitive element, the conductive layer 222c, and the pixel electrode 111 in the display area 68. Therefore, compared with the configuration shown in FIG. 5, the configuration shown in FIG. 4 can increase the aperture ratio of the sub-pixels. Also, the power consumption of the display device can be reduced.

[0127] In one aspect of the present invention, by providing a contact portion between the pixel electrode 111 and the transistor and the capacitive element in the display area 68, the aperture ratio can be increased by 10% or more, and further by 20% or more. As a result, the power consumption of the backlight can be reduced by 10% or more, and further by 20% or more.

[0128] Estimating how much the aperture ratio and the power consumption of the backlight change by changing the configuration of FIG. 5 to the configuration of FIG. 4 results in the following.

[0129] Here, assuming a display for a large TV, the layout of the sub-pixels in FIGS. 4 and 5 is applied to a TN-mode liquid crystal display device with a fineness of 136 ppi, a diagonal dimension of the display area of 65 inches, and a resolution of 8K.

[0130] The size of the sub-pixel is 62.5 μm × 187.5 μm. The liquid crystal element is in the vertical electric field mode, and the holding capacitance can be formed between the gate wiring and the source wiring or the drain wiring. Also, assuming 120 Hz driving, two signal lines are arranged for one sub-pixel. The transistor has a BGTC-type channel etch structure.

[0131] ​​​​The aperture ratio of the pixel layout in Figure 5(A) is 37.3%. The aperture ratio of the transistor is 47.1%. The retaining capacitance and the contact between the transistor and the pixel electrode. By making the part a configuration that transmits visible light, the aperture ratio can be increased to 1.26 times, It is expected that the power consumption of the Krite can be reduced by approximately 21%.

[0132] [About the materials] Next, we will discuss the details of the materials and other components that can be used in each component of the display device of this embodiment. Then, an explanation will be given. Note that explanations of components that have already been explained may be omitted. The following materials are also suitable for the display devices and touch panels shown below, as well as their components. It can be used as appropriate.

[0133] <Circuit boards 51, 61> There are no major restrictions on the material of the substrate of the display device according to one aspect of the present invention, and various substrates can be used. They can be found in glass substrates, quartz substrates, sapphire substrates, semiconductor substrates, ceramic substrates, etc. A mixed substrate, a metal substrate, or a plastic substrate can be used.

[0134] By using a thin substrate, the display device can be made lighter and thinner. By using a substrate with a thickness sufficient to be flexible, a flexible display device can be realized. Cut.

[0135] A display device according to one aspect of the present invention involves forming transistors and the like on a fabricated substrate, and then on another substrate. It is fabricated by transposing transistors and other components onto it. By using the fabricated substrate, the characteristics can be improved. Formation of good transistors, formation of transistors with low power consumption, and durable display devices To improve manufacturing, provide heat resistance to display devices, reduce the weight of display devices, or make display devices thinner. This is possible. The substrate on which the transistor is transposed is capable of forming the transistor. Not limited to circuit boards, but also paper circuit boards, cellophane circuit boards, stone circuit boards, wood circuit boards, cloth circuit boards (natural fibers (silk) Cotton, linen, synthetic fibers (nylon, polyurethane, polyester) or regenerated fibers (A (including cete, cupro, rayon, recycled polyester), leather substrate, or rubber A substrate or similar material can be used.

[0136] Transistors 201 and 206 The transistor in a display device according to one aspect of the present invention is either a top-gate type or a bottom-gate type. Any of the following structures may be used. Alternatively, gate electrodes may be provided above and below the channel. This is also acceptable. The semiconductor material used in the transistor is not particularly limited; for example, oxide semiconductors, etc. Examples include lycon and germanium.

[0137] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors, Semiconductors with crystalline properties (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or those with a crystalline region in part) Any semiconductor (having a region) may be used. If a semiconductor with crystalline properties is used, This is preferable because it suppresses the degradation of the DISTA characteristics.

[0138] For example, elements of Group 14, compound semiconductors, or oxide semiconductors can be used in the semiconductor layer. Yes, it can. Typically, this includes semiconductors containing silicon, semiconductors containing gallium arsenide, or indium. Oxide semiconductors containing these materials can be applied to semiconductor layers.

[0139] It is preferable to apply an oxide semiconductor to the semiconductor in which the transistor channel is formed. It is particularly preferable to use oxide semiconductors with a larger band gap than silicon. Using semiconductor materials with a wider band gap and lower carrier density than silicon This is preferable because it allows for a reduction in the current (off-current) when the transistor is off.

[0140] For information on oxide semiconductors, please refer to the above description and Embodiment 4, etc.

[0141] By using oxide semiconductors, fluctuations in electrical properties are suppressed, resulting in highly reliable transistors. It can be achieved.

[0142] Furthermore, its low off-current allows the charge stored in the capacitor via the transistor to be released over a long period of time. It is possible to hold it in this way. By applying such transistors to pixels, the display It also becomes possible to stop the drive circuit while maintaining the gradation of the image. This enables the creation of display devices with reduced power consumption.

[0143] Transistors 201 and 206 have an oxide semiconductor layer that has been purified to suppress the formation of oxygen vacancies. It is preferable to have this feature. This allows the off-current of the transistor to be lowered. Therefore, the holding time of electrical signals such as image signals can be extended, and the power is on. The refresh interval can also be set to a longer duration. Therefore, the frequency of refresh operations can be reduced. Therefore, it has the effect of reducing power consumption.

[0144] Furthermore, transistors 201 and 206 can achieve relatively high field-effect mobility, so high It is possible to drive it. By using such high-speed drive transistors in a display device... This allows the transistors in the display unit and the transistors in the drive circuit unit to be formed on the same substrate. It can. In other words, a semiconductor device formed separately from a silicon wafer or the like as a drive circuit. Since it is not necessary to use [a specific component], the number of parts in the display device can be reduced. In addition, by using transistors capable of high-speed operation, high-quality images can be provided. It is possible.

[0145] ≪Insulating layer≫ Insulating materials that can be used for each insulating layer, overcoat, spacer, etc. of a display device. As such, organic insulating materials or inorganic insulating materials can be used. Examples include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyam Examples include doimide resins, siloxane resins, benzocyclobutene resins, and phenolic resins. It can be made. As an inorganic insulating layer, silicon oxide film, silicon oxide nitride film, silicon oxide nitride Calcium film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, Zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, ranyl oxide Examples include tan film, cerium oxide film, and neodymium oxide film.

[0146] <<Conductive layer>> This includes the gate, source, and drain of a transistor, as well as various wirings and electrodes of a display device. The conductive layer contains aluminum, titanium, chromium, nickel, copper, yttrium, and zirconium. Metals such as um, molybdenum, silver, tantalum, or tungsten, or these as the main component. The alloy can be used as a single-layer or multi-layer structure. For example, aluminum A two-layer structure in which a titanium film is laminated on a film, a two-layer structure in which a titanium film is laminated on a tungsten film, A two-layer structure with a copper film laminated on a molybdenum film, and an alloy film containing molybdenum and tungsten on A two-layer structure with a copper film laminated on top of a copper-magnesium-aluminum alloy film. A layered structure, a titanium film or titanium nitride film, and a layered structure on top of the titanium film or titanium nitride film. A luminium film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. A three-layer structure, a molybdenum film or molybdenum nitride film, and the molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the butene film, and then a molybdenum film is laid on top of that. Alternatively, there are three-layer structures that form a molybdenum nitride film. For example, when the conductive layer is made into a three-layer structure... The first and third layers consist of titanium, titanium nitride, molybdenum, tungsten, and molybdenum. Alloys containing tungsten and molybdenum, alloys containing molybdenum and zirconium, or molybdenum nitride It forms a film made of den, and the second layer is made of copper, aluminum, gold or silver, or copper and manganese. It is preferable to form a film made of a low-resistance material such as an alloy of ITO. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, and tungsten oxide. Indium oxide containing tungsten, indium tin oxide containing titanium oxide, indium zinc oxide Translucent conductive materials such as phosphates and ITSO may also be used.

[0147] Alternatively, an oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.

[0148] ≪Adhesive layer 141≫ The adhesive layer 141 may be a thermosetting resin, a photocuring resin, or a two-component curable resin. Curable resins can be used. For example, acrylic resin, urethane resin, epoxy resin Alternatively, siloxane resins can be used.

[0149] <<Connector 242>> For example, the connector 242 may be an anisotropic conductive film (ACF). Conductive Film), or anisotropic conductive paste (ACP: Aniso You can use tropic conductive pastes, etc.

[0150] ≪Colored layer 131≫ The colored layer 131 is a colored layer that transmits light in a specific wavelength range. Possible materials include metal materials, resin materials, and resin materials containing pigments or dyes. These are some examples.

[0151] ≪Light blocking layer 132≫ The light-shielding layer 132 is provided, for example, between adjacent colored layers 131 of different colors. Black matrix formed using metal materials or resin materials containing pigments or dyes The acrylic can be used as the light-shielding layer 132. Providing these in areas other than the display unit 62 is preferable because it can suppress light leakage due to guided light, etc. It seems so.

[0152] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up a display device are each subjected to sputtering. Chemical vapor deposition (CVD) method Vacuum deposition, pulsed laser deposition (PLD) tion) method, Atomic Layer Deposition (ALD) method It can be formed using methods such as the CVD method. An example of the CVD method is plasma chemical vapor deposition (P Examples include the ECVD method and the thermal CVD method. An example of the thermal CVD method is the organometallic chemical vapor phase. One example is the deposition method (MOCVD: Metal Organic CVD).

[0153] The thin films that make up the display device (insulating films, semiconductor films, conductive films, etc.) are each spin-coated, Dip, spray coating, inkjet printing, dispensing, screen printing, offset Printing, doctor knife, slit coat, roll coat, curtain coat, knife coat It can be formed by methods such as [mention specific method].

[0154] The thin films that make up the display device can be processed using photolithography or other methods. Alternatively, island-like thin films may be formed by a film deposition method using a shielding mask. Even if you process the thin film using methods such as imprinting, sandblasting, or lift-off, Good. In photolithography, a resist mask is formed on the thin film to be processed, A method for processing the thin film by etching or the like to remove the resist mask, and a photosensitive A method of forming a thin film, then exposing and developing it to process the thin film into a desired shape, There is.

[0155] In photolithography, the light used for exposure is, for example, the i-line (wavelength 365nm). Examples include the g-line (wavelength 436nm), the h-line (wavelength 405nm), and light obtained by mixing these. In addition, ultraviolet light, KrF laser light, or ArF laser light may also be used. Yes, it is possible. Alternatively, exposure may be performed using immersion lithography. The light used for exposure may be extremely light. Examples include ultraviolet light (EUV: Extreme Ultra-violet) and X-rays. Furthermore, instead of using light for exposure, an electron beam can be used. (Extreme ultraviolet light, X-rays) Alternatively, using an electron beam is preferable because it enables extremely fine processing. When exposure is performed by scanning a beam, such as a beam, a photomask is not required. ru.

[0156] Thin film etching can be performed using dry etching, wet etching, or sandblasting. These can be used.

[0157] <2. Example of Display Device Configuration 2> Figures 6 to 8 show examples of display devices. Figure 6 is a cross-sectional view of display device 100B. Figure 7 is a cross-sectional view of the display device 100C. Figure 8(A) is a cross-sectional view of the display device 100D. This is a diagram. It also shows perspective views of display devices 100B, 100C, and 100D. Since this is the same as the display device 100A shown in Figure 1, a detailed explanation is omitted here.

[0158] The display device 100B shown in Figure 6 has a transistor structure that is different from the display device 100A shown earlier. different.

[0159] Specifically, in the display device 100A, an example was shown where the transistor has one gate. The transistors 201 and 206 of the display device 100B have two gates. As mentioned above, it is preferable that the two gates are electrically connected. This can increase the field-effect mobility of the transistor.

[0160] The rest of the configuration is the same as that of the display device 100A, so a detailed explanation will be omitted.

[0161] The display device 100C shown in Figure 7 is a transmissive liquid crystal display device using a longitudinal electric field type liquid crystal element. This is just one example.

[0162] As shown in Figure 7, the display device 100C consists of a substrate 51, a transistor 201, and a transistor 206, liquid crystal element 40, capacitive element 219, alignment film 133a, alignment film 133b, connection part 20 4. Adhesive layer 141, coloring layer 131, light-shielding layer 132, overcoat 121, substrate 61, and It has polarizing plates 130, etc.

[0163] The display unit 62 includes a transistor 206, a liquid crystal element 40, and a capacitive element 219.

[0164] Transistor 206 consists of a gate 221, an insulating layer 213, a conductive layer 222a, and a conductive layer 222c , and also having a semiconductor layer 231.

[0165] The conductive layer 222a and the conductive layer 222c are each connected to the semiconductor layer 231.

[0166] The liquid crystal element 40 is a liquid crystal element to which VA mode is applied. The liquid crystal element 40 has a pixel electrode 1 11, it has a common electrode 112 and a liquid crystal layer 113. The liquid crystal layer 113 has a pixel electrode 111 and It is located between the common electrodes 112.

[0167] The pixel electrode 111 is connected to the semiconductor layer 23 of the transistor 206 via the conductive layer 222c. It is electrically connected to 1.

[0168] The capacitive element 219 has a conductive layer 217 and a conductive layer 218. 8 is superimposed via the insulating layer 213.

[0169] Here, the semiconductor layer 231, conductive layer 222c, conductive layer 217, and conductive layer 218 are visible A light-transmitting conductive material is used. Conductive layer 218 and conductive layer 222c are manufactured using the same process and the same It can be formed from the material. This allows the pixel electrode 111 and transistor 206 to be connected. The contact unit and the capacitive element 219 can be arranged in the display area 68. This allows for an increase in the aperture ratio.

[0170] If the overcoat 121 has a planarization function, the common electrode 112 can be formed flat. Yes, it is possible. This makes it possible to suppress variations in the thickness of the liquid crystal layer 113.

[0171] Figure 7 describes an example of the materials and formation method for each layer of the transistor 206 shown in Figure 7. .

[0172] First, as one electrode (conductive layer 217) of the capacitive element, a conductive film that transmits visible light is used. After forming, a metal film such as a Cu film is used as the gate 221 using the sputtering method. Forms a metal film. This metal film also functions as a scanning line. Furthermore, using this metal film, the same process In this manner, gate wiring for transistors in the surrounding circuitry can also be formed.

[0173] Next, as the insulating layer 213 which is the gate insulating layer, a silicon nitride film and a silicon oxide nitride film are used. These are stacked to form the semiconductor layer 231. Next, using the sputtering method, CAC is formed. -The OS film and the CAAC-OS film are laminated together. On the CAC-OS film, chemical resistance and p By forming a CAAC-OS film with high rasm resistance, semiconductors can be fabricated during the transistor manufacturing process. Body layer 231 becomes less susceptible to damage. Next, the source electrode or drain electrode is the conductor. As the electrode layer 222c, an indium zinc oxide film is formed using the sputtering method. The semiconductor layer 231 and the conductive layer 222c are formed by wet etching. This is possible. When forming the conductive layer 222c, the semiconductor layer 231 is not etched. To increase the selectivity ratio, a different material from the one used when forming the semiconductor layer 231 is added to the etching solution. It is preferable to use it. Furthermore, using the indium zinc oxide film, in the same process, The other electrode (conductive layer 218) of the element can also be formed.

[0174] Next, using the sputtering method, a metal film such as a Cu film is used as the signal line and conductive layer 222a. This forms a metal film. Furthermore, using this metal film, in the same process, the transistors of the peripheral circuit are formed. Source and drain wiring can also be formed.

[0175] Next, the insulating layer 212 and insulating layer 214, which are passivation films, are used in the PECVD apparatus. Using this method, a silicon oxidoxide-nitride film and a silicon nitride film are laminated together. Then, planarization is performed. As a functional insulating layer 215, acrylic resin is applied, and the openings (contact openings) Form it. Then, an ITO film is formed as the pixel electrode 111.

[0176] Furthermore, the gate electrode of the transistor in the pixel has a gold film such as Cu that is formed as a scanning line. It is preferable to use a gen film. This allows light from the backlight to reach the channel formation region. Irradiation can be suppressed. In Figure 7, the relationship between transistor 206 and pixel electrode 111 The contact portion and the capacitive element 219 are configured to transmit visible light.

[0177] The display device 100D shown in Figure 8(A) is the same as the display device 100C shown earlier, and the pixel electrode 111 The arrangement and shape of the common electrode 112 are different.

[0178] Both the pixel electrode 111 and the common electrode 112 have a comb-like upper surface shape (also called a planar shape), Alternatively, it may have an upper surface shape with slits.

[0179] In the display device 100D shown in Figure 8(A), the pixel electrode 111 and the common electrode 112 are on the same plane. It is located on the surface.

[0180] Alternatively, when viewed from above, the end of the slit of one electrode and the end of the slit of the other electrode are The shapes may be uniform. A cross-sectional view in this case is shown in Figure 8(B).

[0181] Alternatively, when viewed from above, the pixel electrode 111 and the common electrode 112 have portions that overlap each other. It may be present. A cross-sectional view in this case is shown in Figure 8(C).

[0182] Alternatively, the display unit 62 may be provided with both pixel electrodes 111 and common electrodes 112 when viewed from above. It may have uncut portions. A cross-sectional view in this case is shown in Figure 8(D).

[0183] As described above, the display device according to one aspect of the present invention includes transistors and liquid crystal elements of various shapes. This can be applied.

[0184] <3. Pixel arrangement example> Figures 9(A) and (B) show examples of pixel arrangement. In Figures 9(A) and (B), the red sub-pixels R, This shows an example where one pixel is composed of a green sub-pixel G and a blue sub-pixel B. Figure 9( In A) and (B), multiple scan lines 81 extend in the x direction, and multiple signal lines 82 extend in the y direction. It extends in that direction, and the scan line 81 and signal line 82 intersect.

[0185] As shown within the dashed-dot frame in Figure 9(A), the sub-pixel consists of transistor 206 and capacitive element 3 4, and a liquid crystal element 40. The gate of transistor 206 is electrically connected to the scan line 81. It is connected. Of the source and drain of transistor 206, one is connected to the signal line 82. They are electrically connected, and the other side is electrically connected to one electrode of the capacitive element 34 and one electrode of the liquid crystal element 40. They are electrically connected. The other electrode of the capacitive element 34 and the other electrode of the liquid crystal element 40 are connected. Each is given a constant potential.

[0186] Figures 9(A) and (B) show an example of applying source line inversion drive. Signal A1 and signal A Signal 2 has the same polarity. Signals B1 and B2 have the same polarity. Signal A1 and signal B2 Signal B1 is a signal with opposite polarity. Signals A2 and B2 are signals with opposite polarity. That is the case.

[0187] As display devices become higher resolution, the distance between subpixels decreases. For example, in Figure 9(A) As shown within the dashed-dotted box, in the subpixel to which signal A1 is input, signal B1 is input Near the signal line 82, the liquid crystal is susceptible to the influence of the potentials of both signal A1 and signal B1. This makes it easier for liquid crystal alignment defects to occur.

[0188] In Figure 9(A), the direction in which multiple subpixels exhibiting the same color are arranged is the y-direction. It is roughly parallel to the direction in which line 82 extends. As shown within the dashed-dotted line frame in Figure 9(A), A sub-pixel exhibiting a different color is adjacent to the longer side of the sub-pixel.

[0189] In Figure 9(B), the direction in which multiple subpixels exhibiting the same color are arranged is the x-direction. It intersects with the direction in which line 82 extends. Sub-pixels are shown within the dashed-dotted frame in Figure 9(B). On the shorter side, there are adjacent subpixels exhibiting the same color.

[0190] As shown in Figure 9(B), the side of the subpixel that is roughly parallel to the direction in which the signal line 82 extends is When the side is shorter, liquid crystal alignment defects are more likely to occur compared to when the side is longer (Figure 9(A)). The area can be narrowed. As shown in Figure 9(B), the area where liquid crystal alignment defects are likely to occur When the region is located between subpixels exhibiting the same color, and when it is located between subpixels exhibiting different colors. Compared to (Figure 9(A)), the display malfunction becomes less noticeable to the user of the display device. In one embodiment, the direction in which multiple subpixels exhibiting the same color are arranged is such that the signal line 82 extends It is preferable that the direction intersects with the direction of lengthening.

[0191] <4. Example of Display Device Configuration 3> One aspect of the present invention is a display device (input / output device or touch panel) equipped with a touch sensor. It can be applied to (also known as). Applying the configuration of each of the above-mentioned display devices to a touch panel. This is possible. In this embodiment, the main example is one in which a touch sensor is mounted on the display device 100A. I will explain it to them.

[0192] The detection element (also called a sensor element) of a touch panel according to one embodiment of the present invention is not limited. Various sensors capable of detecting the proximity or contact of an object to be detected, such as a finger or stylus. It can be applied as a detection element.

[0193] Examples of sensor types include capacitive, resistive, surface acoustic wave, and infrared sensors. Various methods can be used, such as optical, pressure-sensitive, and other similar methods.

[0194] In this embodiment, a touch panel having a capacitive sensing element will be used as an example for explanation. .

[0195] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitive capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.

[0196] A touch panel according to one aspect of the present invention is formed by bonding together a separately manufactured display device and a detection element. The configuration includes a substrate supporting the display element and a counter substrate, with the detection element configured on one or both of these substrates. Various configurations can be applied, such as configurations that include poles.

[0197] Figure 10 shows an example of a touch panel. Figure 10(A) is a perspective view of touch panel 350A. Figure 10(B) is a schematic perspective view of Figure 10(A) unfolded. Therefore, only representative components are shown. In Figure 10(B), substrates 61 and 162 are shown. The outline is shown only with a dashed line.

[0198] The touch panel 350A has a configuration in which a display device and a sensing element, which were manufactured separately, are bonded together. be.

[0199] The touch panel 350A has an input device 375 and a display device 370, and these are stacked together It is provided.

[0200] The input device 375 includes a substrate 162, electrodes 127, electrodes 128, multiple wirings 137, and multiple The FPC72b has wiring 138. It is electrically connected to the FPC72b. IC73b is provided on the FPC72b.

[0201] The display device 370 has two substrates, 51 and 61, which are positioned opposite each other. It has a display unit 62 and a drive circuit unit 64. Wiring 65 and the like are provided on the circuit board 51. It is. FPC72a is electrically connected to wiring 65. IC73a is attached to FPC72a. It is provided.

[0202] Signals and power are supplied to the display unit 62 and the drive circuit unit 64 from the wiring 65. The power and frequency are input to wiring 65 via FPC72a from an external source or IC73a. .

[0203] The display device 370 shown in Figure 10 can be modified to use the display device 100A shown in Figure 2(A). can.

[0204] <5. Example of Display Device Configuration 4> Figure 11 shows an example of a touch panel. Figure 11(A) is a perspective view of touch panel 350B. Figure 11(B) is a schematic perspective view of Figure 11(A) unfolded. Therefore, only representative components are shown. In Figure 11(B), only the outline of the substrate 61 is shown with a dashed line. It is clearly stated.

[0205] The touch panel 350B has the function of displaying images and the function of a touch sensor. It is an in-cell type touch panel.

[0206] The touch panel 350B has a configuration in which electrodes and other components constituting the sensing element are provided only on the opposing substrate. This configuration is compared to a configuration in which a separately manufactured display device and a detection element are bonded together. In general, it is possible to make the touch panel thinner or lighter, or the touch panel The number of parts can be reduced.

[0207] In Figures 11(A) and (B), the input device 376 is provided on the circuit board 61. The wiring 137 and 138 of the input device 376 are connected to the FPC7 provided on the display device 379. 2 is electrically connected. For example, at connection point 63, 1 of wiring 137 (or wiring 138) Furthermore, the conductive layer provided on the substrate 51 side is electrically connected via a connector.

[0208] By using this configuration, the FPC connected to the touch panel 350B is located on one board side. Here, it can only be placed on the circuit board 51 side. Also, 2 or more touch panels 350B The above FPC can be attached in this configuration, but as shown in Figures 11(A) and (B), The control panel 350B is equipped with one FPC72, and input is received from the display device 379 via the FPC72. A configuration that supplies signals to both devices 376 is preferable because it simplifies the configuration. Compared to the case where FPC is connected to both board 51 and board 61, when incorporated into electronic equipment... It is inexpensive and reduces the number of parts.

[0209] IC73 may have a function to drive the input device 376. An IC may be further provided on the FPC72. Alternatively, an IC that drives the input device 376 may be provided. It may be mounted on the circuit board 51.

[0210] Of the conductive layers of the input device, the conductive layer that overlaps with the display area 68 contains a material that transmits visible light. Use a material. Alternatively, the conductive layer of the input device may be placed only in the non-display area 66. By configuring the conductive layer of the power device so as not to overlap with the display area 68, the conductive layer of the input device The visible light transmittance of the electrochemical layer material is not limited. The conductive layer of the input device has a resistance such as metal. Materials with a low molecular weight can be used. For example, as wiring and electrodes for touch sensors, meta It is preferable to use Lumesh. This reduces the resistance of the wiring and electrodes of the touch sensor. It can be lowered. Furthermore, it is suitable as a touch sensor for large display devices. Generally, metals are materials with high reflectivity, but they can be made darker by applying oxidation treatments. This is possible. Therefore, even when viewed from the display side, visibility due to reflection of ambient light is also possible. It can help prevent a decline in sexual function.

[0211] Furthermore, the wiring and electrodes are made of a metal layer and a layer with low reflectivity (also called a "dark layer"). It may also be formed by lamination. Examples of dark layers include a layer containing copper oxide, copper chloride, or ternoxide. There are layers containing ru, etc. Also, the dark layer contains metals such as Ag particles, Ag fibers, Cu particles, etc. Nanoparticles, carbon nanotubes (CNTs), graphene and other nanocarbon particles, and PE It may also be formed using conductive polymers such as DOT, polyaniline, and polypyrrole.

[0212] The display device of this embodiment has a region in which the transistor transmits visible light, so the pixels The aperture ratio can be increased. This can reduce the power consumption of the display device. ru.

[0213] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0214] (Embodiment 2) In this embodiment, the operating modes that can be performed by a display device according to one aspect of the present invention are shown in Figure Let's explain using 12.

[0215] Note that the following assumes operation at a normal frame rate (typically between 60Hz and 240Hz). There is a normal operating mode and a mode that operates at a low frame rate. The Idling Stop (IDS) drive mode will be explained using an example.

[0216] Note that IDS drive mode is a mode in which, after the image data writing process is performed, the image data is written This refers to a driving method that stops the changeover. Image data is written first, and then the next... By extending the interval until the image data is written, the time required to write the image data during that period is reduced. This reduces power consumption. The IDS drive mode is, for example, the normal operating mode. The frame frequency can be set to about 1 / 100 to 1 / 10 of that of the standard. Still images are continuous The video signal is the same between frames. Therefore, the IDS drive mode displays still images. This is particularly effective in the following cases. By using IDS drive to display images, power consumption is reduced. In addition to reducing screen flicker, it also suppresses eye strain.

[0217] Figures 12(A) to 12(C) show the pixel circuit and the normal drive mode and IDS drive mode. This is the timing chart for explanation. Note that in Figure 12(A), the first display element 501( Here, a reflective liquid crystal element is used, and a pixel circuit 5 is electrically connected to the first display element 501. 06 and, are shown. Also, in the pixel circuit 506 shown in Figure 12(A), the signal line SL and, A gate line GL, a transistor M1 connected to the signal line SL and gate line GL, and Capacitive element Cs connected to Zistor M1 LC This indicates that.

[0218] Transistor M1 can be a leak path for data D1. Therefore, transistor M1 A smaller off-current is preferable. The transistor M1 is a semiconductor in which the channel is formed. It is preferable to use a transistor that has a metal oxide in its body layer. The metal oxide provides amplification. If the metal oxide has at least one of the following properties: rectification and switching, then the metal oxide is used. Metal oxide semiconductor or oxide It can be called an oxide semiconductor, or OS for short. The following is a typical example of a transistor, where an oxide semiconductor is used in the semiconductor layer where the channel is formed. This explanation will use the transistor used (also called an "OS transistor"). ZISTA has lower leakage current in the non-conductive state than transistors using polycrystalline silicon, etc. It has the characteristic of having an extremely low off-current. By using an OS transistor for transistor M1. This allows the charge supplied to node ND1 to be retained for a long period of time.

[0219] In the circuit diagram shown in Figure 12(A), the liquid crystal element LC is the leak path for data D1. Therefore, in order to properly drive the IDS, the resistivity of the liquid crystal element LC should be 1.0 × 10 1 4 It is preferable that the density be Ω·cm or greater.

[0220] The channel region of the above OS transistor includes, for example, In, Ga, and Zn. Oxides, oxides containing In and Zn can be suitably used. Typical oxides containing Ga and Zn have a ratio of In:Ga:Zn = 4:2:4.1 Compositions in the vicinity of the [atomic ratio] can be used.

[0221] Figure 12(B) shows the signals applied to the signal line SL and gate line GL, respectively, in normal drive mode. This is a timing chart showing the waveform. In normal drive mode, the normal frame frequency (e.g.) It operates at 60Hz (for example). Figure 12(B) shows the period from T1 to T3. Each frame period A scan signal is applied to the gate line GL, and data D1 is written from the signal line SL to node ND1. This operation is performed when the same data D1 is written from period T1 to T3. The same applies when writing different data.

[0222] On the other hand, Figure 12(C) shows the signal line SL and gate line GL in IDS drive mode, respectively This is a timing chart showing the waveform of the applied signal. In IDS drive, a low frame frequency is used. It operates at a frequency (e.g., 1Hz). One frame period is represented by period T1, and within that period, the data is written The loading period is period T W The data retention period is set to period T. RET It is represented as follows. The IDS drive mode is, Period T W Then, a scan signal is applied to the gate line GL, and data D1 is written to the signal line SL, for a period T. RET Then, the gate wire GL is fixed to a low voltage level, and transistor M1 is left in a non-conducting state. Then, the operation is performed to retain the data D1 that has been written. Note that the frame rate is low. For example, you could set it to be between 0.1Hz and 60Hz.

[0223] This embodiment can be combined with other embodiments as appropriate.

[0224] (Embodiment 3) In this embodiment, an example of a method for driving a touch sensor will be described with reference to the drawings.

[0225] <Examples of sensor detection methods> Figure 13(A) is a block diagram showing the configuration of a mutual capacitive touch sensor. A) shows the pulse voltage output circuit 551 and the current detection circuit 552. Note that Figure 13( In A), the electrode 521 to which a pulse voltage is applied and the electrode 522 to which the change in current is detected are positioned separately. These are shown as six wires, X1 to X6 and Y1 to Y6, respectively. See also Figure 13. (A) illustrates the capacitance 553 formed by the superposition of electrodes 521 and 522. They are present. Furthermore, electrodes 521 and 522 may be interchangeable in their function.

[0226] The pulse voltage output circuit 551 is used to sequentially apply pulse voltages to the wiring X1 to X6. This is a circuit. When a pulse voltage is applied to the wiring X1 to X6, capacitance 553 is formed. An electric field is generated between electrode 521 and electrode 522. This electric field generated between the electrodes can be blocked by shielding, etc. By causing a change in the mutual capacitance of quantity 553, proximity or contact of the object to be detected is detected. It can be released.

[0227] The current detection circuit 552 detects changes in the mutual capacitance of capacitor 553 in the wiring of Y1 to Y6. This is a circuit for detecting changes in current. In the wiring of Y1 to Y6, the proximity of the object to be detected and If there is no contact, the detected current value does not change, but if the object being detected is in proximity or in contact with it... When the mutual capacitance decreases further, a change in the current value is detected. Note that current detection is performed as follows: This can be done using an integrating circuit or similar method.

[0228] Furthermore, one or both of the pulse voltage output circuit 551 and the current detection circuit 552 are shown in Figure 1, etc. They may be formed on the substrate 51 or substrate 61 shown. For example, the display unit 62 and the drive circuit unit 6 When formed simultaneously with 4, the process can be simplified, and it can also be used to drive the touch sensor. This is preferable because it reduces the number of components. Also, the pulse voltage output circuit 551 and the electric One or both of the current detection circuits 552 may be mounted on IC73.

[0229] In particular, as transistors formed on the substrate 51, multiple connections are made in the semiconductor layer where the channel is formed. When using crystalline silicon such as crystalline silicon or single-crystal silicon, the pulse voltage output circuit 55 The driving capability of circuits such as 1 and the current detection circuit 552 is improved, and the sensitivity of the touch sensor is improved. It is possible.

[0230] Figure 13(B) shows the input and output waveforms for the mutual capacitive touch sensor shown in Figure 13(A). The timing chart is shown. Figure 13(B) shows the detected objects in each matrix over a 1-frame period. The system will perform detection of the object to be detected (non-touch). Also, in Figure 13(B), the case where no object is detected (non-touch) is shown. This shows two cases: when detecting an object (touch) and when detecting an object to be detected. Note that Y1 is For the wiring to Y6, the waveform shown represents the voltage value corresponding to the detected current value.

[0231] A pulse voltage is applied sequentially to the wiring of X1-X6, and according to this pulse voltage, Y1 to The waveform changes in the wiring of Y6. If there is no proximity or contact with the object to be detected, X1 to X The waveforms of Y1 to Y6 change uniformly in response to the voltage change in wiring 6. Meanwhile, the detected object At points of proximity or contact, the current value decreases, and consequently, the waveform of the corresponding voltage value also changes. To transform.

[0232] In this way, by detecting changes in mutual capacitance, the proximity or contact of the object being detected can be detected. It is possible.

[0233] <Examples of driving methods for display devices> Figure 14(A) is a block diagram showing an example of the configuration of a display device. Driving circuit GD (scan line drive circuit), source drive circuit SD (signal line drive circuit), multiple pixels p This shows a display unit having ix. Note that in Figure 14(A), the gate drive circuit GD is electrically connected. The gate lines x_1 to x_m (where m is a natural number) are connected to the source drive circuit SD, and electrically to the source drive circuit SD. For each connected source line y_1 to y_n (where n is a natural number), each pixel pix These are denoted by the signs (1,1) through (n,m).

[0234] Figure 14(B) shows the signal applied to the gate line and source line in the display device shown in Figure 14(A). This is a timing chart diagram of the number. In Figure 14(B), the data signal is shown for each frame period. The cases where the data is rewritten and where the data signal is not rewritten are shown separately. (See Figure 1) 4(B) does not take into account periods such as return periods.

[0235] When the data signal is rewritten every frame period, the gate lines x_1 to x_m will have the following properties: Scan signals are applied sequentially. During the horizontal scanning period 1H, when the scan signal is at the H level, each A data signal D is applied to the source lines y_1 through y_n of the column.

[0236] If the data signal is not rewritten every frame period, it is applied to gate lines x_1 to x_m. The scanning signal is stopped. Also, during the horizontal scanning period 1H, the source lines y_1 to y_n of each column Stop the data signal being supplied.

[0237] A driving method that does not rewrite the data signal every frame period is particularly useful for pixels (pix). This is effective when applying oxide semiconductors to the semiconductor layer in which the channel is formed as a transistor. Therefore, transistors using oxide semiconductors are different from transistors using semiconductors such as silicon. It is possible to significantly reduce the off-current compared to a transistor. Therefore, 1 frame Instead of rewriting the data signal each period, the data signal written in the previous period is retained. This allows for, for example, maintaining the pixel gradation for 1 second or more, preferably 5 seconds or more. It's also possible.

[0238] Furthermore, the semiconductor layer in which the channel is formed as a transistor in the pixel pix is ​​polycrystalline When applying reconversion, etc., the size of the memory capacity of the pixels should be increased in advance. It is preferable to leave it as is. The larger the retention capacity, the longer the pixel gradation can be retained. This is possible. The size of the retaining capacitance is determined by the size of the transistors and display elements electrically connected to the retaining capacitance. It should be set according to the leakage current, but for example, the holding capacitance per pixel should be 5fF or more. Less than or equal to pF, preferably 10 fF to 5 pF, more preferably 20 fF to 1 pF. Therefore, instead of rewriting the data signal every frame period, it writes to the previous period. The data signal can be retained, for example, over a period of several frames or tens of frames. This makes it possible to preserve the gradation of pixels.

[0239] <Example of a method for driving the display unit and touch sensor> Figures 15(A) to (D) show, as an example, the touch sensor explained in Figures 13(A) and (B) and When the display unit described in Figures 14(A) and (B) is driven for 1 second, This diagram explains the operation during the frame period. Note that in Figure 15(A), the display unit 1 Frame duration: 16.7ms (frame frequency: 60Hz), 1 frame of touch sensor This shows the case where the duration is 16.7ms (frame frequency: 60Hz).

[0240] In one embodiment of the present invention, the operation of the display unit and the operation of the touch sensor are independent of each other. Therefore, a touch detection period can be set in parallel with the display period. As shown in Figure 15(A) To that end, the frame duration of both the display unit and the touch sensor is set to 16.7ms (frame frequency). The frequency can be set to 60Hz. Also, the frame frequency of the touch sensor and display can be adjusted. The values ​​may be changed. For example, as shown in Figure 15(B), the duration of one frame in the display unit is set to 8. Set to 3ms (frame frequency: 120Hz), and the duration of one frame for the touch sensor is 16 It can also be set to 0.7ms (frame frequency: 60Hz). Also, although not shown in the diagram, display The frame frequency of this section may be set to 33.3ms (frame frequency: 30Hz).

[0241] Furthermore, the display unit has a configuration that allows switching the frame frequency, and when displaying moving images, the frame Increase the frequency (for example, 60Hz or higher or 120Hz or higher) when displaying still images. This reduces the frame frequency (for example, below 60Hz, below 30Hz, or below 1Hz). This reduces the power consumption of the display device. Also, the frame circumference of the touch sensor The configuration allows for switching between different frequency bands, with different frame frequencies used in standby mode and when touch is detected. You may make it.

[0242] Furthermore, a display device according to one aspect of the present invention does not rewrite the data signals in the display unit, By retaining the data signal rewritten during that period, the display unit's 1-frame duration is set to 16.7m The period can be longer than s. Therefore, as shown in Figure 15(C), the display unit Set the frame duration to 1 sec (frame frequency: 1 Hz), and the touch sensor's duration is set to 1 sec. The frame duration can also be set to 16.7ms (frame frequency: 60Hz).

[0243] Furthermore, without rewriting the data signals in the display unit, the data signals that were rewritten in the previous period are... For configurations that retain the number, refer to the IDS drive mode described earlier. Oh, regarding the IDS drive mode, the data signal rewriting in the display unit is limited to a specific area. This may be performed as a partial IDS drive mode. Partial IDS drive mode is a mode in which the display unit is... The data signal is rewritten only in a specific area, and in other areas, it remains the same as the previous period. This configuration holds the rewritten data signal.

[0244] Furthermore, according to the touch sensor driving method disclosed in this embodiment, the drive shown in Figure 15(C) When performing an action, the touch sensor can be driven continuously. Therefore, as shown in Figure 15(D As shown above, when the touch sensor detects the proximity or contact of the object to be detected, It is also possible to rewrite the data signals of the display unit.

[0245] Here, if the data signal rewriting operation of the display unit is performed during the sensing period of the touch sensor, Noise generated during data signal rewriting is transmitted to the touch sensor, causing the touch sensor to malfunction. This may reduce sensitivity. Therefore, the rewriting period of the data signal in the display unit and It is preferable to drive the touch sensor so that its sensing period is staggered.

[0246] Figure 16(A) shows the rewriting of the data signal of the display unit and the sensing of the touch sensor. An example of this being done in both directions is shown. Also, Figure 16(B) shows the rewriting operation of the data signal of the display unit. This example shows that touch sensor sensing is performed once for every two times this is done. The configuration involves performing touch sensor sensing once for every three or more rewrite operations, without any limitations. That is also acceptable.

[0247] Furthermore, in the transistors applied to pixels, the semiconductor layer in which the channel is formed contains oxide When semiconductors are used, the off-current can be reduced to an extremely low level, thus enabling the rewriting of data signals. The frequency of this can be significantly reduced. Specifically, after rewriting the data signal... This allows for a sufficiently long pause period before the data signal is rewritten. The pause period can be, for example, 0.5 seconds or more, 1 second or more, or 5 seconds or more. The upper limit of the downtime is controlled by the leakage current of the capacitors connected to the transistors and the display elements. It is limited, for example, to less than 1 minute, less than 10 minutes, less than 1 hour, or less than 1 day. It is possible.

[0248] Figure 16(C) shows an example where the data signal of the display unit is rewritten at a frequency of once every 5 seconds. In Figure 16(C), the display unit rewrites the data signal and then writes the next data signal. A pause period is provided during which the rewriting operation is suspended before the replacement operation. So, the touch sensor has a frame frequency of iHz (where i is greater than or equal to the frame frequency of the display device, here It can be driven at 0.2Hz or higher. Also, as shown in Figure 16(C), touch Sensor sensing is performed during the idle period, and not during the data signal rewriting period of the display unit. This is preferable because it improves the sensitivity of the touch sensor. Also, see Figure 16(D As shown above, the data signal rewriting of the display unit and the sensing of the touch sensor are performed simultaneously. This allows for the simplification of the driving signals.

[0249] Furthermore, during periods when the data signal rewriting operation of the display unit is not performed, the data signal to the display unit is not rewritten. In addition to stopping the supply of the number, one of the gate drive circuit GD and source drive circuit SD also The operation of both may be stopped. Furthermore, the gate drive circuit GD and the source drive circuit SD Power supply to one or both may be cut off. This reduces noise. This reduces the power consumption and further improves the sensitivity of the touch sensor. Also, the display device can be turned off. Power consumption can be further reduced.

[0250] A display device according to one aspect of the present invention has a configuration in which a display unit and a touch sensor are sandwiched between two substrates. Therefore, the distance between the display unit and the touch sensor can be brought extremely close. Noise from the display unit's operation can easily propagate to the touch sensor, reducing the touch sensor's sensitivity. There is a risk that this will happen. By applying the drive method illustrated in this embodiment, it is possible to make it thinner and high This makes it possible to create a display device with a touch sensor that also achieves high detection sensitivity.

[0251] This embodiment can be combined with other embodiments as appropriate.

[0252] (Embodiment 4) In this embodiment, it is used in the semiconductor layer of the transistor disclosed in one aspect of the present invention. This section explains the metal oxides that can be produced. Note that metal oxides are used in the semiconductor layer of transistors. In such cases, the term "metal oxide" may be replaced with "oxide semiconductor."

[0253] Oxide semiconductors can be divided into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As for crystalline oxide semiconductors, CAAC-OS (c-axis-aligned crystals Polycrystalline oxide semiconductor, n c-OS(nanocrystalline oxide semiconductor ), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like o Examples include xide semiconductors and amorphous oxide semiconductors.

[0254] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention includes CAC-OS(Clo ud-Aligned Composite oxide semiconductor ) may also be used.

[0255] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention is the non-single-crystal oxide described above. Semiconductors or CAC-OS can be suitably used. Also, non-single-crystal oxide semiconductors and In this regard, nc-OS or CAAC-OS can be suitably used.

[0256] In one aspect of the present invention, it is preferable to use CAC-OS as the semiconductor layer of the transistor. It seems that using CAC-OS gives transistors high electrical characteristics or high reliability. It can be granted.

[0257] The following provides a detailed explanation of CAC-OS.

[0258] CAC-OS or CAC-metal oxide has conductive properties in some parts of the material. In addition, a portion of the material has insulating properties, while the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used in the transistor channel. When used in a formation region, its conductive function is to allow electrons (or holes) that act as carriers to flow. The insulating function is the function of preventing the flow of electrons, which act as carriers. By having the insulating function and the switching function work complementaryly, the switching function (O This function (to enable or disable the on / off state) is imparted to CAC-OS or CAC-metal oxide. This is possible. In CAC-OS or CAC-metal oxide, each By separating these functions, it is possible to maximize the performance of both.

[0259] Furthermore, CAC-OS or CAC-metal oxide has conductive and insulating properties. It has regions. The conductive region has the conductive function described above, and the insulating region has the insulating function described above. It has the function of [this]. Furthermore, within the material, the conductive region and the insulating region are at the nanoparticle level. In some cases, they are separated by a rib. Also, conductive regions and insulating regions are located within the material. They may be unevenly distributed. Furthermore, the conductive regions appear blurred around the edges and connected in a cloud-like pattern. There are cases where this occurs.

[0260] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.

[0261] Furthermore, CAC-OS or CAC-metal oxide has different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxi de consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a low gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. A component having a wide gap acts complementaryly with a component having a narrow gap. In conjunction with the components, carriers also flow to components with a wide gap. Therefore, the above C AC-OS or CAC-metal oxide is applied to the channel formation region of the transistor. When used, a high current driving force is required in the transistor's ON state, i.e., a large ON current. Furthermore, a high field-effect mobility can be obtained.

[0262] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite) or metal matrix composite (metal m It can also be called an atrix composite.

[0263] CAC-OS, for example, has elements constituting the metal oxide that are between 0.5 nm and 10 nm in size. Preferably, the material is composed of particles that are unevenly distributed in size of 1 nm to 2 nm or in that vicinity. In the following, in metal oxides, one or more metal elements are unevenly distributed. The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm to 2 nm. A mixture of particles smaller than or near the size of m is also called a mosaic or patchy appearance.

[0264] Furthermore, it is preferable that the metal oxide contains at least indium. In particular, indium and It is preferable that it contains zinc. In addition to these, aluminum, gallium, and yttrium are also preferable. Umm, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium nium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum tantalum, tungsten, or one or more selected from magnesium, etc. may be included It may be.

[0265] For example, in In-Ga-Zn oxide, CAC-OS (among CAC-OS, In-G a-Zn oxide may be particularly referred to as CAC-IGZO.) refers to indium oxide (hereinafter, InO X1 (X1 is a real number greater than 0).), or indium zinc oxide (hereinafter, In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) and ), or gallium oxide (hereinafter, GaO X3 (X3 is a real number greater than 0). ), or gallium zinc oxide (hereinafter, Ga X4 Zn Y4 O Z4 (X4, Y4, and Z4 are real numbers greater than 0).) and the like, and the material separates into a mosaic shape, the mosaic-like InO X1 , or In X2 Zn Y2 O Z2 has a structure uniformly distributed in the film (hereinafter, also referred to as cloud-like).

[0266] That is, CAC-OS is a composite metal oxide having a structure in which a region mainly composed of GaO X3 and a region mainly composed of In X2 Zn Y2 O Z2 , or InO X1 are mixed. Yes. In this specification, for example, the atomic ratio of In to element M in the first region is The first region is greater than the atomic ratio of In to element M in the second region. Assume that the concentration of In is higher compared to the other region.

[0267] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are such examples. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1 +x0) Ga (1-x0) O3(ZnO) m0 It can be expressed as (-1 ≤ x0 ≤ 1, where m0 is any number). Examples include crystalline compounds.

[0268] The above crystalline compounds have a single crystal structure, a polycrystalline structure, or CAAC(c-axis al It has an igned crystal structure. Note that the CAAC structure is a structure with multiple IGZO The nanocrystals have c-axis orientation and are linked without orientation in the ab-plane, forming a crystalline structure. ru.

[0269] On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS is In, Ga In a material composition containing Zn and O, a portion is observed to be in the form of nanoparticles with Ga as the main component. The region that is obscured and the region that is observed to be in the form of nanoparticles mainly composed of In are each mosaic-like. This refers to a configuration in which particles are randomly dispersed in a ripple-like manner. Therefore, in CAC-OS, the crystal structure This is a secondary element.

[0270] Furthermore, CAC-OS does not include a layered structure of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, is included. do not have.

[0271] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 but In some cases, a clear boundary may not be observable between the principal component region and the surrounding area.

[0272] Note that aluminum, yttrium, copper, vanadium, and beryllium can be used instead of gallium. Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more species selected from Cium, etc., are included, CAC-OS will be partially The region is observed to be in the form of nanoparticles mainly composed of the metal element, and a part of it is mainly composed of In. The regions observed in the nanoparticle form are randomly dispersed in a mosaic-like manner. say.

[0273] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not intentionally heated. It is possible. Also, when forming CAC-OS by sputtering, the deposition gas and Then, select from inert gases (typically argon), oxygen gas, and nitrogen gas. You can use one or more of these. Also, the oxygen gas in relation to the total flow rate of the deposition gas during film formation. A lower flow rate ratio is preferable, for example, a flow rate ratio of oxygen gas of 0% or more and less than 30% is preferable. It is preferable that the amount be between 0% and 10%.

[0274] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan method, which is the only Out-of-plane method, It has the characteristic of not showing a clear peak. In other words, from X-ray diffraction, the measurement area It can be seen that no orientation is observed in the ab-plane direction or the c-axis direction.

[0275] Furthermore, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam) to illuminate the surface. In the electron diffraction pattern obtained by irradiation, there is a ring-shaped region of high brightness, and Multiple bright spots are observed in the ting region. Therefore, from the electron diffraction pattern, CAC-OS The crystal structure is non-oriented in both the planar and cross-sectional directions (nc(nano-cr)). It can be seen that it has a ystal structure.

[0276] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X-rays Spectroscopy (EDX: Energy Dispersive X-ray spectroscopy) GaO X3 The region in which is the main component and In X2 Zn Y2 O Z2 , or InO X1 Regions where it is the main component are unevenly distributed and mixed. It can be confirmed that it has the following structure.

[0277] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, It has different properties from ZO compounds. In other words, CAC-OS is GaO X3 These are the main components. In a certain area, X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component, and It exhibits phase separation, and has a mosaic-like structure in which regions composed of each element are the main components.

[0278] Here, In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is GaO X3 Compared to regions where these are the main components, this region has high conductivity. In other words, In X2 Zn Y 20 Z2 , or InO X1 In the region where this is the main component, the carrier flows, causing oxidation. Conductivity as a material semiconductor is exhibited. Therefore, In X2 Zn Y2 O Z2 , or InO X Regions where 1 is the main component are distributed in a cloud-like manner within the oxide semiconductor, resulting in a high field effect. Mobility (μ) can be achieved.

[0279] On the other hand, GaO X3 Regions in which these are the main components are In X2 Zn Y2 O Z2 , or InO X This region has higher insulating properties compared to the region where 1 is the main component. In other words, GaO X3 etc. The distribution of the main component region within the oxide semiconductor suppresses leakage current and improves performance. It can perform itching operations.

[0280] Therefore, when CAC-OS is used in semiconductor devices, GaO X3 Insulation caused by, In X2 Zn Y2 O Z2 , or InO X1 The conductivity resulting from this works in a complementary manner. As a result, high on-current (I on ), and high field effect mobility (μ) can be achieved. Cut.

[0281] Furthermore, semiconductor devices using CAC-OS have high reliability. Therefore, CAC-OS is... It is ideal for various semiconductor devices, including displays.

[0282] This embodiment can be combined with other embodiments as appropriate.

[0283] (Embodiment 5) This embodiment describes an electronic device according to one aspect of the present invention.

[0284] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony computers, monitors for computers, digital cameras, digital video cameras Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio playback devices. Examples include devices and large game machines such as pachinko machines.

[0285] Figures 17(A) to (C) show a portable information terminal. The portable information terminal in this embodiment is, for example, It has one or more functions selected from, such as a telephone, a notebook, or an information viewing device. Physically, it can be used as a smartphone or smartwatch. Examples of mobile information terminals include mobile phones, email, document viewing and creation, music playback, It can run various applications such as video playback, internet communication, and games. Yes, it is possible. The portable information terminals shown in Figures 17(A) to (C) can have a variety of functions. For example, a function to display various information (still images, videos, text images, etc.) on the display unit. Touch panel functionality, calendar, date or time display functions, and various software (Program) functions to control processing, wireless communication functions, and various functions using wireless communication functions Features include the ability to connect to computer networks and the ability to transmit various types of data using wireless communication. Alternatively, it can perform a receiving function, or read a program or data recorded on a recording medium. It can have a function to display information on the display unit, etc. The functions of a mobile information terminal are not limited to these, and it may have other functions as well.

[0286] The mobile information terminals shown in Figures 17(A) to (C) are used for mobile phone calls, email, document viewing, and document creation. various applications such as music playback, internet communication, and computer games. It can be executed. Also, the personal information terminals shown in Figures 17(A) to (C) are based on communication standards. It is possible to perform short-range wireless communication. For example, the wristwatch type shown in Figure 17(C) The portable information terminal 820 communicates with a wireless headset, You can also make calls hands-free.

[0287] The portable information terminal 800 shown in Figure 17(A) consists of a housing 811, a display unit 812, and operation buttons 81 3. It has an external connection port 814, a speaker 815, a microphone 816, etc. (Mobile information terminal 8) The display unit 812 of 00 has a flat surface.

[0288] The portable information terminal 810 shown in Figure 17(B) consists of a housing 811, a display unit 812, and operation buttons 81 3. It has an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc. The display unit 812 of the portable information terminal 810 has a curved surface.

[0289] Figure 17(C) shows a wristwatch-type personal information terminal 820. The personal information terminal 820 has a housing 8 11. Display unit 812, speaker 815, operation key 818 (power switch or operation switch) It has (including Chi), etc. The outer shape of the display unit 812 of the portable information terminal 820 is circular. The display unit 812 of the information terminal 820 has a flat surface.

[0290] A display device according to one aspect of the present invention can be used in the display unit 812. This allows for aperture ratio It is possible to manufacture a portable information terminal with a high-resolution display.

[0291] The portable information terminal of this embodiment is equipped with a touch sensor on the display unit 812. To make a phone call, Alternatively, any operation such as entering text is performed by touching the display unit 812 with a finger or stylus. It can be done by doing so.

[0292] Furthermore, the operation button 813 can be used to turn the power ON or OFF, and to display information on the display unit 812. You can switch the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0293] Furthermore, a detection device such as a gyroscope or accelerometer is installed inside the mobile information terminal. This determines the orientation of the mobile device (portrait or landscape) and sets the orientation of the display on the display unit 812. It can be switched automatically. Also, the orientation of the screen display is switched on the display unit 812. This can be done by touching, operating the operation button 813, or by voice input using the microphone 816. It is also possible to do so.

[0294] The television device 7100 shown in Figure 18(A) has a display unit 7102 built into the housing 7101. It is included. The display unit 7102 is capable of displaying images. One embodiment of the present invention The display device can be used in the display unit 7102. This allows the display unit with a high aperture ratio to be used in the display unit 7102. A television device can be manufactured. Also, here, stand 7103 This configuration provides better support for the casing 7101.

[0295] The television unit 7100 is operated using the control switches on the housing 7101 and a separate remote control. This can be done using the control unit 7111. The control keys on the remote control unit 7111 This allows you to control the channel and volume, and the video displayed on the display unit 7102 It can be operated. Also, the remote control unit 7111 The configuration may also include a display unit that shows the information output from the device.

[0296] The television system 7100 will consist of a receiver, modem, and other components. It can receive more general television broadcasts, and furthermore, via a modem, it can receive them via wired or wireless connection. By connecting to a communication network, one-way (sender to receiver) or two-way (sender to receiver) communication is possible. It is also possible to communicate information between believers and recipients, or between recipients themselves.

[0297] The computer 7200 shown in Figure 18(B) consists of a main unit 7201, a housing 7202, and a display unit 72 03, Keyboard 7204, External connection port 7205, Pointing device 7206 This includes the above. Furthermore, the computer uses the display device according to one aspect of the present invention in its display unit 7203. This is how it is manufactured. This allows for the creation of a computer with a display unit that has a high aperture ratio. It can be manufactured.

[0298] The camera 7300 shown in Figure 18(C) consists of a housing 7301, a display unit 7302, and operation buttons 73 03, It has a shutter button 7304, etc. The camera 7300 also has a detachable lens The Z7306 is installed.

[0299] A display device according to one aspect of the present invention can be used in the display unit 7302. This allows the opening A camera with a high-efficiency display unit can be manufactured.

[0300] Here, the camera 7300 and lens 7306 are removed from the housing 7301 and replaced. Although this configuration is possible, the lens 7306 and the housing 7301 may be integrated into a single unit.

[0301] Camera 7300 takes still images or videos by pressing the shutter button 7304. It can be displayed. In addition, the display unit 7302 has the function of a touch panel, and the display unit It is also possible to take an image by touching the 7302.

[0302] Note that the Camera 7300 requires the attachment of a separate flash unit, viewfinder, etc. This is possible. Alternatively, these may be incorporated into the enclosure 7301.

[0303] This embodiment can be combined with other embodiments as appropriate. [Examples]

[0304] In this embodiment, the cross-sectional structure of the display unit and the scanning line drive circuit unit of a display device according to one aspect of the present invention is examined. We will discuss and evaluate the light transmittance of the contact area between the transistor and the pixel electrode placed in the display area. I will explain the results of what was done.

[0305] Figure 19 shows the cross-sectional structure of the display unit and the scan line drive circuit unit of the display device in this embodiment.

[0306] The display device shown in Figure 19 is an example of a transmissive liquid crystal display device using a longitudinal electric field type liquid crystal element. be.

[0307] As shown in Figure 19, the display device consists of a substrate 51, transistor 201, and transistor 206 , liquid crystal element 40, capacitive element 219, alignment film 133a, alignment film 133b, connection part 204, connection Coating layer 141, colored layer 131, light-shielding layer 132, overcoat 121, substrate 61, and polarizing layer. It has plates 130, etc.

[0308] The display unit 62 includes a transistor 206, a liquid crystal element 40, and a capacitive element 219.

[0309] Transistor 206 consists of a gate 221, an insulating layer 213, a conductive layer 222a, and a conductive layer 222c , and also having a semiconductor layer 231.

[0310] The conductive layer 222a and the conductive layer 222c are each connected to the semiconductor layer 231.

[0311] The liquid crystal element 40 is a liquid crystal element to which VA mode is applied. The liquid crystal element 40 has a pixel electrode 1 11. It has a common electrode 112 and a liquid crystal layer 113. The liquid crystal layer 113 has a pixel electrode 111 and It is located between the common electrodes 112.

[0312] The pixel electrode 111 is connected to the semiconductor layer 23 of the transistor 206 via the conductive layer 222c. It is electrically connected to 1.

[0313] The conductive layer 222c functions as one of the pair of electrodes of the capacitive element 219. 17a functions as the other electrode of the pair of electrodes of the capacitive element 219. Conductive layer 222c and The conductive layer 217a overlaps with the insulating layer 213. Conductive layer 217b and conductive layer 218 It is connected to this.

[0314] Here, semiconductor layer 231, conductive layer 222c, conductive layer 217a, conductive layer 217b, and conductive A conductive material that transmits visible light is used for layer 218. Conductive layer 217a and conductive layer 217b These can be formed using the same process and materials. The conductive layer 218 and the conductive layer 222c are It can be formed using the same process and the same materials. This allows the pixel electrode 111 and the tra Contact portion of the converter 206, contact portion of conductive layer 217b and conductive layer 218, and Capacitive elements 219 can be placed in the display area 68. Therefore, the aperture ratio can be increased. It is possible.

[0315] An example of the materials and formation method for each layer of transistor 206 shown in Figure 19 will be explained. ru.

[0316] First, the conductive layer 217a and conductive layer 217b are made of a conductive film that transmits visible light (for example, I A TSO is formed, and then, as gate 221, a Cu film etc. is formed using the sputtering method. A metal film is formed. This metal film also functions as a scanning line. Furthermore, using this metal film... Furthermore, gate wiring for transistors in the peripheral circuit can also be formed in the same process.

[0317] Next, as the insulating layer 213 which is the gate insulating layer, a silicon nitride film and a silicon oxide nitride film are used. These are stacked to form the semiconductor layer 231. Next, using the sputtering method, CAC is formed. -The OS film and the CAAC-OS film are laminated together. On the CAC-OS film, chemical resistance and p By forming a CAAC-OS film with high rasm resistance, semiconductors can be fabricated during the transistor manufacturing process. Body layer 231 becomes less susceptible to damage. Next, the source electrode or drain electrode is the conductor. As the electrode layer 222c, an indium zinc oxide film is formed using the sputtering method. The semiconductor layer 231 and the conductive layer 222c are formed by wet etching. This is possible. When forming the conductive layer 222c, the semiconductor layer 231 is not etched. To increase the selectivity ratio, a different material from the one used when forming the semiconductor layer 231 is added to the etching solution. It is preferable to use it. Furthermore, using the indium zinc oxide film, in the same process, conductive Layer 218 can also be formed.

[0318] Next, using the sputtering method, a metal film such as a Cu film is used as the signal line and conductive layer 222a. This forms a metal film. Furthermore, using this metal film, in the same process, the transistors of the peripheral circuit are formed. Source and drain wiring can also be formed.

[0319] Next, the insulating layer 212 and insulating layer 214, which are passivation films, are used in the PECVD apparatus. Using this method, a silicon oxidoxide-nitride film and a silicon nitride film are laminated together. Then, planarization is performed. As a functional insulating layer 215, acrylic resin is applied, and the openings (contact openings) Form it. Then, an ITO film is formed as the pixel electrode 111.

[0320] Furthermore, the gate electrodes of the transistors in the pixels use a Cu film formed as a scanning line. It is preferable that this allows light from the backlight to irradiate the channel formation region. This can be suppressed. In Figure 7, the contact between transistor 206 and pixel electrode 111. The part and the capacitive element 219 are configured to transmit visible light.

[0321] A layered structure that can be used in region 139 in Figure 19 was fabricated, and the light transmittance was measured. The results are shown in Figure 20. Figure 20 also shows the light transmittance of the glass (substrate 51). The transmittance is also shown. The transmittance was measured using a spectrophotometer U-4100 (Hitachi High-Tech Science Corporation). Measurements were taken using a device manufactured by the company.

[0322] As shown in Figure 20, in one embodiment of the present invention, a laminated structure formed to increase the aperture ratio However, it was confirmed that it transmits visible light. This allowed the transistor 206 and the pixel electrode 1 to... The contact portion with 11 and the capacitive element 219, etc., are formed using a material that transmits visible light. This suggests that it may reduce the power consumption of the backlight. [Examples]

[0323] In this embodiment, the cross-sectional structure of the display unit and the scanning line drive circuit unit of a display device according to one aspect of the present invention is examined. This document explains the results of evaluating the light transmittance of transistors placed in the display area. ru.

[0324] Figures 21(A1), (B1), (C1) and Figures 22(A1), (B1), (C1), (D1) Using this example, the method for fabricating the transistors in the display unit of the display device of this embodiment will be explained. Figures 21 (A2), (B2), (C2) and Figures 22 (A2), (B2), (C2), (D2) Using this, the method for fabricating the transistors in the scan line driving circuit section of the display device of this embodiment. explain.

[0325] First, a conductive layer 217s is formed on the substrate 51, and then a conductive layer 224s is formed on the conductive layer 217s. (Figure 21(A1), (A2)). The conductive layer 217s is a conductive material that transmits visible light. For example, it is formed using ITSO. The conductive layer 224s is made of metal, etc., and the conductive layer 217s is made of It is preferable to form it using a conductive material with low resistance. For example, conductive layer 224s and Then, a metal film such as a Cu film is formed using the sputtering method.

[0326] Next, the conductive layer 217s and conductive layer 224s are processed to form the gate (Figure 21(B1)). (B2)). An island-shaped conductive layer 217 is formed in the display section (Figure 21(B1)), and the scan line drive The dynamic circuit section has a laminated structure of island-shaped conductive layers 217 and island-shaped conductive layers 224 (Figure 2). 1(B2)). For gate formation, a multi-tone mask (halftone mask, graytone mask) is used. It is preferable to use a screen, etc. Using a multi-level mask allows you to increase the number of masks. Furthermore, a gate that transmits visible light is formed in the display section, and a gate with low resistance is formed in the scan line driving circuit section. It can form gate wiring.

[0327] Next, an insulating layer 213 that functions as a gate insulating layer is formed, and a semiconductor layer 2 is placed on the insulating layer 213. Form 31 (Figure 21(C1), (C2)). In this embodiment, the insulating layer 213 is nitrogen A silicon oxide film and a silicon oxide nitride film are laminated to form the semiconductor layer 23. As a first step, the CAC-OS film and the CAAC-OS film are stacked using the sputtering method to form a shape To achieve this, a CAAC-OS film with high chemical and plasma resistance is formed on the CAAC-OS film. This makes the semiconductor layer 231 less susceptible to damage during the transistor fabrication process. By using an oxide semiconductor, a semiconductor layer 231 that transmits visible light can be formed.

[0328] Next, a conductive layer 222s is formed, and a conductive layer 222t is formed on top of the conductive layer 222s (Figure 22). (A1), (A2). The conductive layer 222s is formed using a conductive material that transmits visible light. In this embodiment, an indium zinc oxide film is formed as the conductive layer 222s. 222t is formed using a conductive material with lower resistance than the conductive layer 222s, such as a metal. This is preferable.

[0329] Next, the conductive layer 222s and conductive layer 222t are processed to form the source and drain (Figure 22(B1), (B2). The display unit and the scan line driving circuit unit each have a semiconductor layer 231 Island-shaped conductive layers 222b and 222c are formed, connecting to a portion of the (Figure 22) (B1), (B2). In the display section, the portion where the conductive layer 222t remains is an island-shaped conductive layer. Only island-shaped conductive layers 222a connect to a portion of layer 222b, and many parts of the transistor The configuration allows visible light to pass through (Figure 22(B1)). On the other hand, in the scan line driving circuit section... On the island-shaped conductive layers 222b and island-shaped conductive layers 222c, a conductive layer 222t is processed. Island-shaped conductive layers 222a and island-shaped conductive layers 222d are provided, formed by the above (Figure 22 (B2)) For the formation of the source and drain, a multi-level mask is used, similar to the formation of the gate. It is preferable to have it. Using a multi-gradation mask allows the display area to be displayed without increasing the number of masks. A source and drain that transmit visible light are formed, and the drive circuit section has a source and drain with low resistance. Semiconductor layer 231, source, and drain can be formed. The lines can each be formed by wet etching. Source and Dray When forming the layer, in order to increase the selectivity ratio so that the semiconductor layer 231 is not etched, It is preferable to use a different material for the ching solution than the one used when forming the semiconductor layer 231.

[0330] Next, an insulating layer 212 is formed which functions as a gate insulating layer, and the gate 22 is placed on the insulating layer 212. Form 3. The gate 223 is formed using a conductive material that transmits visible light. In the example, as the insulating layer 212, a silicon oxidizride film and silicon nitride film are used with a PECVD apparatus. The film is formed by laminating the film. As shown in Figures 22(C1) and (C2), the gate 223 is It may also be provided only in the scan line drive circuit section. Also, as shown in Figures 22(D1) and (D2) The gate 223 may be provided in both the display unit and the scan line drive circuit unit.

[0331] Based on the above, the transistors in the display device of this embodiment can be fabricated.

[0332] A layered structure that can be used in region 140 in Figure 22(C1) was fabricated, and light transmission The results of the rate measurement are shown in Figure 23. Figure 23 shows the light of the glass (substrate 51). The transmittance is also shown. The transmittance was measured using a spectrophotometer U-4100 (Hitachi High-Tech Corporation). Measurements were taken using a device manufactured by Jens Corporation.

[0333] As shown in Figure 23, in one embodiment of the present invention, a laminated structure formed to increase the aperture ratio However, it was confirmed that it transmits visible light. This means that many parts of the transistors in the display unit By forming the components using a material that transmits visible light, the power consumption of the backlight can be reduced. This was suggested to be possible. [Explanation of Symbols]

[0334] 34 Capacitive elements 40 Click the LCD button 45 light 51 circuit boards 61 circuit boards 62 Display section 63 Connection part 64 Drive circuit section 65 Wiring 66 Hidden area 68 Display area 72 FPC 72a FPC 72b FPC 73 IC 73a IC 73b IC 81 scan lines 82 signal line 100A display device 100B display device 100C display device 100D display device 111 Pixel electrodes 112 Common electrode 113 Liquid crystal layer 121 Overcoat 127 Electrode 128 electrode 130 Polarizing plate 131 Colored layer 132 Light blocking layer 133a Orientation film 133b Alignment film 137 Wiring 138 Wiring 139 areas 140 areas 141 Adhesive layer 162 circuit boards 201 Transistors 204 Connection part 206 transistors 212 Insulating layer 213 Insulating layer 214 Insulating layer 215 Insulating layer 217 Conductive layer 217a conductive layer 217b Conductive layer 217s conductive layer 218 Conductive layer 219 Capacitive elements 220 Insulating layer Gate 221 222a conductive layer 222b Conductive layer 222c conductive layer 222d conductive layer 222s conductive layer 222t conductive layer Gate 223 224 Conductive layer 224s conductive layer 228 scan lines 229 Signal Line 231 Semiconductor layer 231a First metal oxide layer 231b Second metal oxide layer 242 connectors 244 Capacity Lines 251 Conductive layer 350A Touch Panel 350B Touch Panel 370 Display device 375 Input device 376 Input device 379 Display device 501 Display elements 506-pixel circuit 521 Electrode 522 Electrode 551 Pulse voltage output circuit 552 Current detection circuit 553 capacity 800 Mobile Information Terminals 810 Mobile Information Terminal 811 cabinet 812 Display section 813 Operation Buttons 814 External connection port 815 Speaker 816 Mike 817 Camera 818 Operation Keys 820 Mobile Information Terminal 7100 Television equipment 7101 enclosure 7102 Display section 7103 Stand 7111 Remote Control Unit 7200 Computers 7201 Main Unit 7202 enclosure 7203 Display section 7204 Keyboard 7205 External connection port 7206 Pointing device 7300 Camera 7301 enclosure 7302 Display section 7303 Operation Buttons 7304 Shutter button 7306 Lens

Claims

1. It comprises a transistor and a pixel electrode electrically connected to the transistor, The semiconductor layer on which the channel of the transistor is formed comprises a first metal oxide layer and a second metal oxide layer on the first metal oxide layer. The first metal oxide layer has regions with lower crystallinity than the second metal oxide layer. The second metal oxide layer has a crystalline region having c-axis orientation, The gate electrode of the transistor is positioned below the semiconductor layer so as to overlap with the semiconductor layer via an insulating layer that functions as a gate insulating layer. The third metal oxide layer, having a region that functions as either the source electrode or the drain electrode of the transistor, has a region that is in contact with the pixel electrode. The pixel electrode and the third metal oxide layer have the function of transmitting visible light. The conductive layer having a region that functions as the other of the source electrode and drain electrode of the transistor has the function of blocking visible light. The conductive layer and the third metal oxide layer have a region that is in contact with the upper surface of the second metal oxide layer and a region that is in contact with the upper surface of the insulating layer, The conductive layer comprises a fourth metal oxide layer and island-shaped conductive layers. The fourth metal oxide layer has the function of transmitting visible light, The aforementioned island-shaped conductive layer has the function of blocking visible light. The fourth metal oxide layer has a region that is in contact with the upper surface of the second metal oxide layer and a region that is in contact with the upper surface of the insulating layer. The aforementioned island-shaped conductive layer is a display device having a region that is in contact with a part of the upper surface of the fourth metal oxide layer, The display device can operate at a frame frequency of 0.1 Hz or more and less than 60 Hz. Display device.

2. In claim 1, The first metal oxide layer, the second metal oxide layer, and the third metal oxide layer each contain indium, metal M (where M is aluminum, gallium, yttrium, or tin), and zinc. A display device wherein the hydrogen concentration of the third metal oxide layer is greater than the hydrogen concentrations of the first and second metal oxide layers.

3. In claim 2, A display device in which the first metal oxide layer, the second metal oxide layer, and the third metal oxide layer are such that when the ratio of the number of atoms of indium, the metal M, and the zinc is In:M:Zn = 4:x:y, x is 1.5 or more and 2.5 or less, and y is 2 or more and 4 or less.

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