Display devices and electronic devices

Abstract

The present invention provides a display device having an imaging function. The display device includes a first pixel and a second pixel, wherein: the first pixel includes a light-emitting device; the second pixel includes a light-receiving device and a lens; the light-emitting device and the light-receiving device include an electrode used in common; the lens and the light-receiving device include areas overlapping with each other; the width of the lens is greater than the width of a light-receiving portion of the light-receiving device; the cross-section of the lens in a thickness direction including an optical axis is of a substantially trapezoidal shape; a surface of the lens including the legs of the substantially trapezoidal shape is a convex surface; a surface of the lens including the upper base of the substantially trapezoidal shape and the light-receiving portion are provided so as to face each other; and the first pixel and the second pixel are provided adjacent to each other.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, display devices have been applied to a wide variety of uses. Examples of large-scale display devices include home television systems, digital signage, and PID (Public Information Display). Display devices are also widely used in smartphones and tablet devices equipped with touch panels.

[0004] Furthermore, there is a demand for higher resolution display devices. High-resolution display devices are needed, for example, for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR).

[0005] As a display device, light-emitting devices (also called light-emitting elements) have been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply.

[0006] Patent Document 1 discloses a display device for VR using an organic EL device (also called an organic EL element).

[0007] Furthermore, in order to improve the light extraction efficiency of display devices, a structure is also employed in which light emitted from a light-emitting device is extracted through microlenses. Patent Document 2 discloses a method for forming microlenses using a radiation-sensitive resin composition. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] International Publication No. 2018 / 087625 [Patent Document 2] Japanese Patent Publication No. 2020-101659 [Overview of the Initiative] [Problems that the invention aims to solve]

[0009] By forming a light-receiving device in the pixels, an imaging function can be added to the display device. For example, by touching a finger or palm to the panel surface and taking an image, images such as fingerprints or palm prints can be obtained. Images such as fingerprints and palm prints can be used for personal authentication.

[0010] Here, because the distance between the panel surface and the light-receiving device is short, it is difficult to provide a lens to collect light rays and form an image. Therefore, it is preferable to form a pinhole on the light-receiving device to reduce the amount of light rays and form an image. When using this configuration, in order to improve the light-receiving sensitivity, it is desirable to devise a way to effectively receive the light passing through the pinhole.

[0011] Therefore, one aspect of the invention aims to provide a display device having an imaging function. Another aspect aims to provide a display device having a configuration that enhances the sensitivity of a light-receiving device. Alternatively, one aspect aims to provide a display device having an authentication function. Another aspect aims to provide a high-definition display device. Another aspect aims to provide a high-resolution display device. Another aspect aims to provide a high-brightness display device. Another aspect aims to provide a highly reliable display device.

[0012] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0013] One aspect of the present invention is a display device having a first pixel and a second pixel, wherein the first pixel has a light-emitting device, and the second pixel has a light-receiving device and a lens, the light-emitting device and the light-receiving device have a common electrode, the lens and the light-receiving device have overlapping regions, the width of the lens is greater than the width of the light-receiving portion of the light-receiving device, the cross-sectional shape of the lens in the thickness direction including the optical axis is substantially trapezoidal, the surface including the legs of the substantially trapezoid is a convex curved surface, the surface including the upper base of the substantially trapezoid and the light-receiving portion are arranged to face each other, and the first pixel and the second pixel are arranged adjacent to each other.

[0014] It is preferable that a light-shielding layer is formed around the above lens.

[0015] In the above lens, the surface including the upper base of the approximately trapezoidal shape may have a convex curved surface.

[0016] Preferably, the lens and the light-receiving device are provided spaced apart so that their centers overlap.

[0017] Another aspect of the present invention has a first pixel and a second pixel. The first pixel has a light-emitting device and a first lens, and the second pixel has a light-receiving device and a second lens. The light-emitting device and the light-receiving device have a common electrode. The first lens and the light-emitting device have an overlapping region with each other, and the second lens and the light-receiving device have an overlapping region with each other. The width of the first lens is larger than the width of the light-emitting portion of the light-emitting device, and the width of the second lens is larger than the width of the light-receiving portion of the light-receiving device. The first lens and the second lens have a substantially trapezoidal cross-sectional shape in the thickness direction including the optical axis, and the surface including the legs of the substantially trapezoid is a convex surface. The surface including the upper base of the substantially trapezoid of the first lens and the light-emitting portion are provided to face each other, and the surface including the upper base of the substantially trapezoid of the second lens and the light-receiving portion are provided to face each other. The first pixel and the second pixel are adjacent display devices.

[0018] A light-shielding layer can be formed around the first lens and the second lens. Alternatively, a light-shielding layer can be formed only around the second lens.

[0019] In the first lens and the second lens, the surface including the upper base of the substantially trapezoid can have a convex surface.

[0020] Preferably, the first lens and the light-emitting device are spaced apart so that their centers overlap each other, and the second lens and the light-receiving device are spaced apart so that their centers overlap each other.

[0021] The light-emitting device may be a tandem type. The tandem type light-emitting device preferably has a plurality of light-emitting units that emit light of the same color.

[0022] Another aspect of the present invention is an electronic device that has the above display device, acquires a fingerprint image with a light-receiving device, and performs fingerprint authentication.

Effects of the Invention

[0023] According to one aspect of the present invention, a display device having an imaging function can be provided. A display device having a configuration that enhances the sensitivity of a light-receiving device can be provided. Alternatively, a display device having an authentication function can be provided. Alternatively, a high-definition display device can be provided. Alternatively, a high-resolution display device can be provided. Alternatively, a high-brightness display device can be provided. Alternatively, a highly reliable display device can be provided.

[0024] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0025] Figure 1A is a top view illustrating an example of a display device. Figure 1B is a cross-sectional view illustrating an example of a display device. Figure 1C is a diagram illustrating the stacked structure of a light-emitting unit. Figures 2A and 2B are cross-sectional views illustrating the elements of the display device. Figures 3A and 3B are cross-sectional views illustrating the elements of the display device. Figures 4A and 4B are cross-sectional views illustrating the elements of the display device. Figure 5A is a top view and perspective view illustrating the elements of the display device. Figure 5B is a top view illustrating the elements of the display device. Figures 6A and 6B are top and perspective views illustrating the elements of the display device. Figures 7A and 7B are cross-sectional views illustrating the elements of the display device. Figures 8A through 8E illustrate the simulation model. Figure 9 illustrates the simulation results. Figures 10A and 10B are cross-sectional views illustrating elements of a display device. Figures 11A and 11B are cross-sectional views illustrating elements of a display device. Figures 12A to 12F are cross-sectional views illustrating an example of a lens manufacturing method. Figures 13A to 13C are cross-sectional SEM images illustrating the lens. Figures 14A to 14K illustrate an example of a pixel. Figures 15A and 15B are perspective views illustrating an example of a display device. Figure 16 is a cross-sectional view illustrating an example of a display device. Figure 17 is a cross-sectional view illustrating an example of a display device. Figure 18 is a cross-sectional view illustrating an example of a display device. Figure 19 is a cross-sectional view illustrating an example of a display device. Figure 20 is a perspective view illustrating an example of a display device. Figure 21A is a cross-sectional view illustrating an example of a display device. Figures 21B and 21C are cross-sectional views illustrating an example of a transistor. Figures 22A and 22B are cross-sectional views illustrating an example of a display device. Figures 23A and 23B are cross-sectional views illustrating an example of a display device. Figures 24A and 24B are cross-sectional views illustrating an example of a display device. Figures 25A and 25B are cross-sectional views illustrating an example of a display device. Figures 26A to 26C illustrate examples of the configuration of a display device. Figures 27A to 27D illustrate an example of an electronic device. Figures 28A to 28F illustrate an example of an electronic device. Figures 29A to 29G illustrate an example of an electronic device. [Modes for carrying out the invention]

[0026] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the invention. Therefore, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0027] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for parts that are the same or have similar functions, and repeated explanations are omitted. Also, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0028] Furthermore, for the sake of ease of understanding, the position, size, and scope of each component shown in the drawings may not represent their actual position, size, and scope. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0029] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0030] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0031] In this specification, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or electron injection layer may be called a "carrier injection layer," a hole transport layer or electron transport layer may be called a "carrier transport layer," and a hole block layer or electron block layer may be called a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable by their cross-sectional shape or characteristics. Furthermore, a single layer may combine the functions of two or three of these carrier injection, carrier transport, and carrier block layers.

[0032] In this specification, a light-emitting device (also called a light-emitting element) has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. Examples of layers (also called functional layers) in the EL layer include a light-emitting layer, a carrier injection layer (hole injection layer and electron injection layer), a carrier transport layer (hole transport layer and electron transport layer), and a carrier blocking layer (hole blocking layer and electron blocking layer). In this specification, a light-receiving device (also called a photodetector) has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as a common electrode and the other as a pixel electrode.

[0033] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°. The side surface of the structure and the substrate surface do not necessarily have to be perfectly flat; they may be substantially planar with a fine curvature, or substantially planar with fine irregularities.

[0034] In this specification, the mask layer is located above at least the light-emitting layer (more specifically, the layer that is processed into an island shape among the layers constituting the EL layer) or the active layer, and has the function of protecting the light-emitting layer or the active layer during the manufacturing process. The mask layer may be removed during the manufacturing process, or at least a part of the mask layer may remain.

[0035] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to the drawings.

[0036] One aspect of the present invention is a display device having light-emitting devices and light-receiving devices manufactured separately for each emission color, and capable of full-color display and imaging. The light-emitting devices may be of a tandem type. By using tandem-type light-emitting devices, a display device that enables high-brightness display and high reliability can be made.

[0037] In this specification, a structure in which at least the light-emitting layer is made separately for each color of light-emitting device (e.g., blue (B), green (G), and red (R)), or where the light-emitting layer is painted separately, may be referred to as an SBS (Side By Side) structure. Because the SBS structure allows for optimization of materials and configuration for each light-emitting device, it can improve the brightness and reliability of the display device.

[0038] When manufacturing a display device having multiple light-emitting devices, each with a different emission color, the light-emitting layers with different emission colors are formed in island-like structures. Similarly, in the light-receiving device, the active layer (a layer with photoelectric conversion function) is also formed in island-like structures.

[0039] In this specification, "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer and an adjacent light-emitting layer are physically separated.

[0040] Island-shaped light-emitting layers and active layers can be formed by vacuum deposition using a metal mask. However, this method can result in deviations from the design in the shape and formation position of the island-shaped light-emitting layers due to factors such as misalignment between the metal mask and the substrate, bending of the metal mask, and leakage of deposited material. Therefore, the formation method using a metal mask is unsuitable for high-resolution and high-aperture ratio displays. Furthermore, when manufacturing large and high-resolution displays, there are concerns that the low dimensional accuracy of the metal mask and deformation due to heat, etc., may lead to low manufacturing yield.

[0041] Therefore, when manufacturing a display device according to one aspect of the present invention, the light-emitting layer and the active layer are processed into fine patterns using lithography and etching processes. Specifically, after forming a pixel electrode for each sub-pixel, a film that will become the light-emitting layer or active layer is deposited on the plurality of pixel electrodes. Subsequently, the film is processed using lithography and etching processes to form one island-shaped light-emitting layer or active layer for each pixel electrode. This makes it possible to form an island-shaped light-emitting layer or active layer for each sub-pixel. In this specification, sub-pixels may be simply referred to as pixels.

[0042] Furthermore, it is preferable to provide a functional layer between the light-emitting layer or active layer and the pixel electrode. It is also preferable that the functional layer be processed in an island-like manner with the same pattern as the light-emitting layer or active layer. Here, the functional layer refers to, for example, a carrier injection layer, a carrier transport layer, or a carrier block layer, and more specifically, a hole injection layer, a hole transport layer, an electron block layer, etc.

[0043] When the above-mentioned functional layer is used as a common layer between adjacent subpixels, lateral leakage current may occur due to the functional layer. On the other hand, in a display device according to one aspect of the present invention, since the functional layer is processed in an island shape with the same pattern as the light-emitting layer, lateral leakage current between adjacent subpixels is substantially eliminated or can be made extremely small.

[0044] In light-emitting devices and light-receiving devices that emit light of different colors, some layers can be formed in the same process. In a method for manufacturing a display device according to one aspect of the present invention, some layers constituting the EL layer of the light-emitting device are formed in island-like structures for each light-emitting color. The active layer of the light-receiving device is also formed in island-like structures. Subsequently, the remaining layers constituting the light-emitting device and the light-receiving device (sometimes called common layers) and a common electrode (also called an upper electrode) shared by the light-emitting device and the light-receiving device are formed.

[0045] Here, the common layer is a layer with relatively high conductivity. Therefore, if the common layer comes into contact with the side of some of the island-shaped EL layers, the side of the active layer, or the side of the pixel electrode, there is a risk of a short circuit between the upper and lower layers in the light-emitting device and the light-receiving device. Furthermore, even if the common layer is provided in an island shape and a common electrode is formed in common for each color, the common electrode may still be a cause of a short circuit.

[0046] Therefore, a display device according to one aspect of the present invention has an insulating layer that covers at least the sides of the island-shaped light-emitting layer and the active layer. Furthermore, it is preferable that the insulating layer covers a portion of the upper surface of each of the island-shaped light-emitting layer and the active layer.

[0047] This prevents some layers of the island-shaped EL layer, the active layer, and the pixel electrodes from coming into contact with the common layer or common electrode. Therefore, it is possible to suppress short circuits between the upper and lower layers in the light-emitting device and the light-receiving device, thereby improving the yield of the light-emitting device and the light-receiving device.

[0048] Preferably, the edges of the insulating layer have a tapered shape with a taper angle of less than 90° in cross-sectional view. This prevents step breaks in the common layer and common electrode provided on the insulating layer. Therefore, connection failures due to step breaks can be suppressed. In addition, it can suppress the local thinning of the common electrode due to the step, which would increase electrical resistance.

[0049] In this specification, "step breakage" refers to the phenomenon in which a layer, film, or electrode is divided due to the shape of the surface on which it is formed (e.g., a step).

[0050] Thus, the island-shaped light-emitting layer and active layer produced by the method for manufacturing a display device according to one aspect of the present invention are formed by processing a film deposited on one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the light-emitting layer of the light-emitting device can be made separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast and brightness, and has high display quality. In addition, the light-receiving device can capture high-definition images.

[0051] Furthermore, a display device according to one aspect of the present invention has convex lens-shaped structures on the light-receiving device and the light-emitting device. By providing these structures on the light-receiving device and the light-emitting device, the light-receiving sensitivity of the light-receiving device and the efficiency of extracting light emitted by the light-emitting device to the outside can be improved.

[0052] By making the width of the structure provided on the light-receiving device greater than the width of the light-receiving section, the light-collecting ability can be increased, and the light sensitivity of the light-receiving device can be improved.

[0053] It is preferable that the cross-section of the convex lens-shaped structure is approximately trapezoidal. In the case of a lens-shaped structure with a hemispherical cross-section, the width and thickness of the lens are proportional, so it may not be possible to place it depending on the pixel size. Also, some of the light reflected within the structure tends to have a large angle of incidence. Therefore, this light is prone to total internal reflection and may not be efficiently incident on the light-receiving device.

[0054] In the case of a structure with a roughly trapezoidal cross-section, the area near the ends has a lens shape, while the area near the center has a flat plate shape. Therefore, light entering near the ends of the opening can be refracted and incident on the photoreceiving device. In addition, because the angle of incidence of light reflected within the structure is relatively small, it is less likely to undergo total internal reflection and can be effectively incident on the photoreceiving device. Therefore, the light sensitivity of the photoreceiving device can be improved.

[0055] Furthermore, some of the light emitted by the light-emitting device may be blocked near the edge of the aperture and not extracted to the outside. By providing a convex lens-shaped structure in the optical path of the light, the light can be refracted and extracted to the outside. Therefore, the efficiency of light extraction can be improved.

[0056] The convex lens-shaped structure can be provided on both the light-receiving device and the light-emitting device, but it may also be provided on either the light-receiving device or the light-emitting device.

[0057] In this specification, the above-mentioned convex lens-shaped structure with a substantially trapezoidal cross-section may be simply referred to as a lens, a trapezoidal lens, or a microlens. Furthermore, a structure in which such lenses are arranged regularly may be referred to as a microlens array (MLA).

[0058] This embodiment will mainly describe the cross-sectional structure of a display device according to one aspect of the present invention.

[0059] Figure 1A shows a top view of a display device 100 having a light-emitting device and a light-receiving device. The display device 100 has a display section in which a plurality of pixels 110 are arranged. Figure 1A shows some of the subpixels, illustrating an example in which a pixel 110 is composed of a plurality of subpixels (subpixels 110a, 110b, 110c, 110d) arranged at equal intervals.

[0060] In this specification and other documents, the row direction may be referred to as the X direction and the column direction as the Y direction. The X and Y directions intersect, or intersect perpendicularly or nearly perpendicularly (see Figure 1A).

[0061] The top surface shape of the subpixel shown in Figure 1A corresponds to the top surface shape of the light-emitting or light-receiving region. The top surface shape of the subpixel may be a polygon such as a triangle, quadrilateral (including rectangles and squares), pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0062] Furthermore, the layout of the circuits in the subpixels is not limited to the subpixel range shown in Figure 1A, but may be located outside of it. For example, the transistors in subpixel 110a may be located within the range of subpixel 110b, or some or all of them may be located outside the range of subpixel 110a.

[0063] The aperture ratios of the sub-pixels 110a, 110b, 110c, and 110d can be determined as appropriate. The aperture ratios of the sub-pixels 110a, 110b, 110c, and 110d may be different, or two or more may be equal or approximately equal.

[0064] A display device according to one aspect of the present invention has a light-receiving device in each pixel. For example, of the four subpixels of the pixel 110 shown in Figure 1A, three may have light-emitting devices and one may have a light-receiving device.

[0065] Each of the three subpixels may have a light-emitting device that emits light of a different color. For example, there may be three subpixels with red (R), green (G), and blue (B), or three subpixels with yellow (Y), cyan (C), and magenta (M).

[0066] In the following explanation, we will describe an example where sub-pixels 110a, 110b, and 110c each have a light-emitting device, and sub-pixel 110d has a light-receiving device 150. Furthermore, while we will describe the light-emitting device 130c of sub-pixel 110c as an element constituting the light-emitting device, the common elements can also be applied to the light-emitting devices of sub-pixels 110a and 110b, respectively.

[0067] Figure 1B shows a cross-sectional view between the dashed line X1 and X2 in Figure 1A. As shown in Figure 1B, an insulating layer is provided on the layer 101 containing the transistor, and a light-emitting device 130c and a light-receiving device 150 are provided on the insulating layer. In addition, a protective layer 131 is provided so as to cover the light-emitting device 130c and the light-receiving device 150.

[0068] On the protective layer 131, the lens 133 and light-shielding layer 135 provided on the substrate 120 are bonded via the adhesive layer 122. Here, a lens 133 is provided for each sub-pixel and has an area that overlaps with the light-emitting device 130c or the light-receiving device 150. A light-shielding layer 135 is provided between adjacent lenses 133.

[0069] Figure 1B shows an example in which light Lem emitted from the light-emitting device 130c is emitted towards the substrate 120 side through the lens 133, and light Lin entering from the substrate 120 side is incident on the light-receiving device 150 through the lens 133.

[0070] Furthermore, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices and light-receiving devices 150. Although not shown in Figure 1B, insulating layers 125 and 127 are also provided in the region between adjacent light-emitting devices.

[0071] First, let's describe the light-emitting device. One embodiment of the present invention is a top-emission type display device that emits light in the opposite direction from the substrate on which the light-emitting device is formed.

[0072] The layer 101 containing the transistors can be a laminated structure having multiple transistors provided on a substrate and an insulating layer covering these transistors. The insulating layer on the transistors may be a single layer or a laminated structure. Figure 1B shows the insulating layer on the transistors: insulating layer 255a, insulating layer 255b on insulating layer 255a, and insulating layer 255c on insulating layer 255b.

[0073] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a, 255b, and 255c, respectively. For insulating layers 255a and 255c, it is preferable to use oxide insulating films or oxidative nitride insulating films such as silicon oxide films, silicon oxidative nitride films, and aluminum oxide films, respectively. For insulating layer 255b, it is preferable to use nitride insulating films or nitride-oxide insulating films such as silicon nitride films and silicon nitride-oxide films. More specifically, it is preferable to use silicon oxide films as insulating layers 255a and 255c, and silicon nitride films as insulating layer 255b. It is preferable that insulating layer 255b has the function of an etching protective film.

[0074] In this specification, "oxide nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0075] The light-emitting device can emit light in the following colors: infrared, red, green, blue, cyan, magenta, yellow, or white. Furthermore, the color purity can be increased by adding a microcavity structure to the light-emitting device. For example, the light-emitting device 130c can emit light in one of three colors: red (R), green (G), or blue (B).

[0076] As the light-emitting device, it is preferable to use an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials for the light-emitting device include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials).

[0077] In a light-emitting device, one electrode functions as the cathode and the other as the anode. In the following explanation, we may use the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0078] The light-emitting device 130c has a pixel electrode 111c on an insulating layer 255c, an island-shaped layer 113c on the pixel electrode 111c, a common layer 114 on layer 113c, and a common electrode 115 on the common layer 114. In the light-emitting device 130c, layer 113c and the common layer 114 can be collectively called the EL layer.

[0079] By providing an EL layer in an island-like configuration for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. This prevents crosstalk caused by unintended light emission, enabling the creation of a display device with extremely high contrast. In particular, it enables the creation of a display device with high current efficiency at low brightness levels.

[0080] The light-emitting device of this embodiment may be a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0081] When using a single-structure light-emitting device, layer 113c may have a light-emitting layer that emits red, green, or blue light.

[0082] When using a tandem light-emitting device, layer 113c can have multiple light-emitting units that emit red, green, or blue light. Alternatively, a tandem structure can be formed by combining light-emitting units of different colors to produce white light.

[0083] Layer 113c may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0084] Layer 113c may, for example, have a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer in this order. Alternatively, an electron blocking layer may be present between the hole transport layer and the emissive layer. Furthermore, a hole blocking layer may be present between the electron transport layer and the emissive layer. Additionally, an electron injection layer may be present on the electron transport layer.

[0085] Alternatively, layer 113c may have an electron injection layer, an electron transport layer, an emissive layer, and a hole transport layer in this order. Furthermore, a hole blocking layer may be present between the electron transport layer and the emissive layer. Also, an electron blocking layer may be present between the hole transport layer and the emissive layer. Furthermore, a hole injection layer may be present on the hole transport layer.

[0086] A tandem light-emitting device may have two or more light-emitting units in layer 113c, and each light-emitting unit may include one or more light-emitting layers. Furthermore, each light-emitting unit may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. It is preferable to provide a charge generation layer (also called an intermediate layer) between each light-emitting unit. The charge generation layer has at least a charge generation region.

[0087] For example, layer 113c can have a laminated structure consisting of a light-emitting unit 113_1, a charge-generating layer 113_3, and a light-emitting unit 113_2 (see the enlarged view of layer 113c in Figure 1C). Note that in the drawings used in this embodiment, the charge-generating layer may be shown with a dashed line.

[0088] When using a tandem light-emitting device, layer 113c can have multiple light-emitting units that emit light of the same color. For example, in the configuration shown in Figure 1C, both light-emitting unit 113_1 and light-emitting unit 113_2 can use the same type of light-emitting unit that emits red, green, or blue light.

[0089] Furthermore, to produce white light emission, a tandem structure can be used, combining light-emitting units of different colors. To obtain white light emission, a configuration is needed in which the light emitted by multiple light-emitting units is combined to produce white light emission. For example, in the configuration shown in Figure 1C, one of the light-emitting units 113_1 and 113_2 can be a blue-emitting unit, and the other a yellow-emitting unit. Alternatively, a red-emitting unit and a cyan-emitting unit can be combined. Alternatively, a green-emitting unit and a magenta-emitting unit can be combined.

[0090] Alternatively, the configuration may consist of three light-emitting units combined together. For example, a configuration may be made by combining a red light-emitting unit, a green light-emitting unit, and a blue light-emitting unit. Alternatively, a configuration may be made by combining a blue light-emitting unit, a yellow or yellow-green light-emitting unit, and a blue light-emitting unit. Alternatively, a configuration may be made by combining a blue light-emitting unit, a yellow, yellow-green or green and red light-emitting unit, and a blue light-emitting unit.

[0091] The number of layers and color order of the light-emitting unit can be, from the anode side, a two-layer structure of B and Y, a two-layer structure of B and light-emitting unit X, a three-layer structure of B, Y, B, or a three-layer structure of B, X, B. The number of layers and color order of the light-emitting layers in light-emitting unit X can be, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, a two-layer structure of G and R, a three-layer structure of G, R, G, or a three-layer structure of R, G, R. In addition, other layers may be provided between the two light-emitting layers.

[0092] Tandem light-emitting devices, which obtain light from multiple light-emitting units, require relatively high voltages for light emission, but the current required to achieve the same light intensity as a single light-emitting device (a configuration with one light-emitting unit) is smaller. Therefore, in a tandem structure, the current stress per light-emitting unit can be reduced, extending the device lifespan. In other words, a highly reliable display device can be formed by using a tandem light-emitting device.

[0093] In the configuration shown in Figure 1C, it is preferable that the light-emitting unit 113_2 has a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. Alternatively, it is preferable that the light-emitting unit 113_2 has a light-emitting layer and a carrier block layer (hole block layer or electron block layer) on the light-emitting layer. Alternatively, it is preferable that the light-emitting unit 113_2 has a light-emitting layer, a carrier block layer on the light-emitting layer, and a carrier transport layer on the carrier block layer. Since the surface of the light-emitting unit 113_2 is exposed during the manufacturing process of the display device, by providing one or both of the carrier transport layer and the carrier block layer on the light-emitting layer, it is possible to suppress the exposure of the light-emitting layer to the outermost surface and reduce the damage to the light-emitting layer. This can improve the reliability of the light-emitting device. If there are three or more light-emitting units, it is preferable that the light-emitting unit provided in the uppermost layer has a light-emitting layer and one or both of the carrier transport layer and the carrier block layer on the light-emitting layer.

[0094] The configuration and materials of the tandem light-emitting device will be described in detail in other embodiments.

[0095] The common layer 114 may have an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may have an electron transport layer and an electron injection layer stacked together, or a hole transport layer and a hole injection layer stacked together. The common layer 114 and the common electrode 115 are shared by the light-emitting device of each subpixel.

[0096] In Figure 1B, layer 113c is formed to cover the edge of the pixel electrode 111c. A mask layer 118c is located on layer 113c of the light-emitting device 130c. The mask layer 118c is a remnant of a mask layer that was prepared in contact with the upper surface of layer 113c during the processing of layer 113c.

[0097] In Figure 1B, one end of the mask layer 118c is aligned with or approximately aligned with the end of layer 113c, and the other end of the mask layer 118c is located on layer 113c. Here, it is preferable that the other end of the mask layer 118c overlaps with layer 113c and the pixel electrode 111c.

[0098] The sides of layer 113c are covered by insulating layer 125. Insulating layer 127 overlaps with the sides of layer 113c via insulating layer 125.

[0099] Furthermore, a portion of the upper surface of layer 113c is covered by mask layer 118c. Insulating layers 125 and 127 overlap with a portion of the upper surface of layer 113c via mask layer 118c. Note that the upper surface of layer 113c is not limited to the upper surface of the flat portion that overlaps with the upper surface of the pixel electrode, but can also include the upper surfaces of the inclined portion and the flat portion located outside the upper surface of the pixel electrode.

[0100] Since a portion of the upper surface and sides of layer 113c are covered by at least one of the insulating layer 125, insulating layer 127, and mask layer 118c, contact between the common layer 114 (or common electrode 115) and the pixel electrode 111c and the sides of layer 113c can be suppressed. Therefore, a short circuit between the upper and lower layers of the light-emitting device can be suppressed.

[0101] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses in which the insulating layer 125 is formed. The insulating layer 127 can be configured to overlap a portion of the upper surface and side surfaces of the layer 113c via the insulating layer 125. Preferably, the insulating layer 127 covers at least a portion of the side surfaces of the insulating layer 125.

[0102] By providing insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, thereby reducing extreme irregularities on the surface of layers formed on the island-shaped layers (e.g., carrier injection layers and common electrodes), making them flatter. Consequently, the coverage of the carrier injection layers and common electrodes can be improved.

[0103] The common layer 114 and the common electrode 115 are provided on layer 113c, the mask layer 118c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step difference occurs due to the region where the pixel electrode and island-shaped EL layer are provided and the region where the pixel electrode and island-shaped EL layer are not provided (the region between light-emitting devices).

[0104] A display device according to one aspect of the present invention has insulating layers 125 and 127, which flatten the step and improve the coverage of the common layer 114 and the common electrode 115. Therefore, connection failures due to step breaks can be suppressed. In addition, it is possible to suppress the local thinning of the common electrode 115 due to the step and the resulting increase in electrical resistance.

[0105] The upper surface of the insulating layer 127 preferably has a highly flat shape, but it may also have convex portions, convex curved surfaces, concave curved surfaces, or recesses.

[0106] Figure 1B shows an example where the upper surface of the insulating layer 127 has a flat portion, but as shown in Figure 2A, the entire upper surface of the insulating layer 127 may have a convex curved shape. Alternatively, as shown in Figure 2B, the upper surface of the insulating layer 127 may have a concave curved shape. In Figure 2B, the upper surface of the insulating layer 127 has a shape that bulges gently from the edge towards the center, i.e., a convex curved surface, and a concave shape in and near the center, i.e., a concave curved surface. Also in Figure 2B, the convex curved portion of the upper surface of the insulating layer 127 is smoothly connected to the tapered portion at the edge. Even if the insulating layer 127 has such a shape, the common layer 114 and the common electrode 115 can be formed on the entire insulating layer 127 with good coverage.

[0107] Furthermore, as shown in Figure 2B, by providing a concave curved surface in the center of the insulating layer 127, the stress on the insulating layer 127 can be relieved. More specifically, by providing a concave curved surface in the center of the insulating layer 127, local stress occurring at the edges of the insulating layer 127 can be relieved, thereby suppressing one or more of the following: delamination between layer 113c and mask layer 118c, delamination between mask layer 118c and insulating layer 125, and delamination between insulating layer 125 and insulating layer 127.

[0108] As shown in Figures 1B to 2B, by providing the mask layer 118c, insulating layer 125, and insulating layer 127, the common layer 114 and common electrode 115 can be formed with high coverage. Furthermore, it is possible to prevent the formation of divided areas in the common layer 114 and common electrode 115, as well as areas with locally thin film thickness.

[0109] Therefore, it is possible to suppress connection failures caused by the divided portions and increases in electrical resistance caused by locally thin film thicknesses in the common layer 114 and common electrode 115 between each light-emitting device. As a result, the display device according to one aspect of the present invention can improve the display quality.

[0110] Next, we will describe examples of materials for insulating layer 125 and insulating layer 127.

[0111] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer during the formation of the insulating layer 127, which will be described later.

[0112] In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) to the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent protection for the EL layer can be formed. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0113] Preferably, the insulating layer 125 functions as a barrier insulating layer against at least one of water and oxygen. Furthermore, preferably, the insulating layer 125 has the function of suppressing the diffusion of at least one of water and oxygen. Also, preferably, the insulating layer 125 has the function of capturing or fixing (also known as gettering) at least one of water and oxygen.

[0114] In this specification, the term "barrier insulating layer" refers to an insulating layer that has barrier properties. Furthermore, in this specification, "barrier properties" refers to a function that suppresses the diffusion of the corresponding substance (also known as low permeability), or a function that captures or fixes the corresponding substance (also known as gettering).

[0115] The insulating layer 125 has the function of a barrier insulating layer or a gettering function, thereby suppressing the intrusion of impurities (typically at least one of water and oxygen) that could diffuse from the outside into each light-emitting device. This configuration makes it possible to provide a highly reliable light-emitting device, and furthermore, a highly reliable display device.

[0116] Furthermore, the same material can be used for the insulating layer 125 and the mask layer 118c. In this case, the boundary between the mask layer 118c and the insulating layer 125 becomes unclear, and the mask layer 118c and the insulating layer 125 may be perceived as a single layer.

[0117] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the extreme irregularities in the insulating layer 125 formed between adjacent light-emitting devices.

[0118] As the insulating layer 127, an insulating layer having an organic material can be suitably used. Preferably, a photosensitive organic resin is used as the organic material; for example, a photosensitive resin composition containing an acrylic resin can be used. In this specification, the term "acrylic resin" does not refer only to polymethacrylate esters or methacrylic resins, but may refer to acrylic polymers in a broad sense.

[0119] Furthermore, as the insulating layer 127, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins may be used. Alternatively, as the insulating layer 127, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used. Additionally, a photoresist may be used as the photosensitive resin. Either a positive-type or negative-type material may be used as the photosensitive organic resin.

[0120] The insulating layer 127 may be made of a material that absorbs visible light. By absorbing the light emitted from the light-emitting device, the insulating layer 127 can suppress light leakage (stray light) from the light-emitting device to adjacent light-emitting or light-receiving devices via the insulating layer 127. This improves the display quality and imaging performance of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, the display device can be made lighter and thinner.

[0121] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used as color filters (color filter materials). In particular, it is preferable to use a resin material which is made by laminating or mixing two or more color filter materials, as this can enhance the visible light shielding effect. In particular, by mixing three or more color filter materials, it is possible to create a black or near-black resin layer.

[0122] Next, the light-receiving device 150 will be described. Note that explanations of elements common to both the light-emitting device 130c and elements serving the same purpose will be omitted.

[0123] A pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0124] Light-receiving devices can detect either visible light, infrared light, or both. When detecting infrared light, it becomes possible to detect objects even in dark places.

[0125] As the light-receiving device, it is preferable to use an organic photodiode having a layer containing an organic compound. Organic photodiodes are easy to make thin, light, and large in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0126] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0127] A light-receiving device can detect light incident on it, generate an electric charge, and extract it as an electric current by driving it with a reverse bias applied between the pixel electrode and the common electrode.

[0128] The same manufacturing methods as for light-emitting devices can be applied to light-receiving devices. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is not formed using a fine metal mask, but rather by processing after depositing a film that will become the active layer onto one surface, thus enabling the formation of an island-shaped active layer with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0129] The light-receiving device 150 includes a pixel electrode 111d on an insulating layer 255c, a layer 113d on the pixel electrode 111d, a common layer 114 on the layer 113d, and a common electrode 115 on the common layer 114.

[0130] Here, layer 113d includes at least an active layer and preferably has multiple functional layers. For example, functional layers include carrier transport layers (hole transport layers and electron transport layers) and carrier block layers (hole block layers and electron block layers). It is also preferable to have one or more layers on the active layer. By having other layers between the active layer and the mask layer, it is possible to suppress the exposure of the active layer to the outermost surface during the manufacturing process of the display device and reduce damage to the active layer. This can improve the reliability of the photodetector 150. Therefore, it is preferable that layer 113d includes an active layer and a carrier block layer (hole block layer or electron block layer) or a carrier transport layer (electron transport layer or hole transport layer) on the active layer.

[0131] Layer 113d is provided on the light-receiving device 150 but not on the light-emitting device 130c. However, functional layers other than the active layer included in layer 113d may have the same material as functional layers other than the light-emitting layer included in layer 113c. On the other hand, the common layer 114 is a continuous layer shared by the light-receiving device 150 and the light-emitting device 130c.

[0132] Here, layers common to both the light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components may be referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both the light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. For example, a hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0133] The configuration and materials of the light-receiving device will be described in detail in other embodiments.

[0134] A mask layer 118c is located between layer 113c and the insulating layer 125, and a mask layer 118d is located between layer 113d and the insulating layer 125. Mask layer 118c is a portion of the mask layer that remained after processing layer 113c. Mask layer 118d is a portion of the mask layer that remained after processing layer 113d, which is a layer containing the active layer, by being in contact with the upper surface of layer 113d. Mask layer 118c and mask layer 118d may be made of the same material or different materials.

[0135] The sub-pixel 110d may have a higher aperture ratio than at least one of the sub-pixels 110a, 110b, and 110c. A larger light-receiving area for sub-pixel 110d may make object detection easier. For example, depending on the resolution of the display device and the circuit configuration of the sub-pixels, the aperture ratio of sub-pixel 110d may be higher than that of the other sub-pixels.

[0136] Furthermore, the aperture ratio of sub-pixel 110d may be lower than that of at least one of sub-pixels 110a, 110b, and 110c. By lowering the aperture ratio of sub-pixel 110d, the pinhole effect can be enhanced, resulting in a sharper image.

[0137] Thus, it is preferable to vary the detection wavelength, resolution, and aperture ratio of the sub-pixel 110d depending on the application.

[0138] The protective layer 131 provided on the light-emitting device 130c and the light-receiving device 150 may be a single-layer structure or a laminated structure of two or more layers. Providing the protective layer 131 can improve the reliability of the light-emitting device 130c and the light-receiving device 150.

[0139] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0140] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115, suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting device and light-receiving device, thereby suppressing degradation of the light-emitting device and light-receiving device and improving the reliability of the display device.

[0141] For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidoxide-nitride insulating films, and nitride-oxide insulating films can be used for the protective layer 131. Specific examples of these inorganic insulating films are given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has a nitride insulating film or a nitride-oxide insulating film, and more preferably a nitride insulating film.

[0142] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0143] The protective layer 131 is preferably highly transparent to visible light. ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials that are each highly transparent to visible light.

[0144] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress impurities (water, oxygen, etc.) from entering the EL layer.

[0145] Furthermore, the protective layer 131 may have an organic film. The protective layer 131 may have both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include organic insulating materials that can be used for the insulating layer 127.

[0146] The protective layer 131 may have a two-layer structure formed using different film deposition methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.

[0147] On the protective layer 131, the lens 133 and light-shielding layer 135 provided on the substrate 120 are bonded via the adhesive layer 122. Here, a lens 133 is provided for each sub-pixel, and the light-emitting device 130c and light-receiving device 150 each have regions that overlap with the lens 133. A light-shielding layer 135 is provided between adjacent lenses 133. The light-shielding layer 135 has a region that overlaps with the insulating layer 127.

[0148] The lens 133 can be formed from the same material as the insulating layer 127. The light-shielding layer 135 can be formed from a metallic material or a resin material containing a visible light-absorbing material.

[0149] It is preferable that the width (L2) of the lens 133 provided on the light-receiving device 150 is greater than the width (L1) of the light-receiving portion of the light-receiving device 150. With this configuration, light incident on a wider area (aperture) than the light-receiving portion can be collected and incident on the light-receiving portion, thereby increasing the light sensitivity. The light-receiving portion is defined as the area where layer 113d and the common layer 114 are in contact. If the common layer 114 is not provided, the light-receiving portion is defined as the area where layer 113d and the common electrode 115 are in contact.

[0150] Here, the width of the lens and light-receiving part corresponds to one of the following for their respective shapes when viewed from above: the diameter of the inscribed circle, the diameter of the circumscribed circle, the diameter, the length between opposite sides, or the length between diagonals (or the length corresponding to the diagonal distance in the case of shapes with rounded corners). The same definition of width applies to the pinhole (aperture) described later. Specific examples of lens width will be shown later using Figures 5A, 6A, and 6B.

[0151] Next, the lens provided on the light-receiving device 150 will be described using the cross-sectional views in Figures 3A to 5B. The lens and the light-receiving device 150 are spaced apart so that their centers overlap.

[0152] When imaging an object in contact with the surface of the substrate 120, it is preferable to provide an element for imaging the object onto the light-receiving device. Generally, a lens can be considered as such an element, but it is difficult to secure a sufficient area between the surface of the substrate 120 and the light-receiving device to provide a lens. Therefore, it becomes difficult to provide a lens for collecting light rays and forming an image.

[0153] Therefore, it is preferable to form a pinhole on the light-receiving device to reduce the amount of light rays and form an image. In one embodiment of the present invention, the pinhole is formed by providing an opening in the light-shielding layer 135.

[0154] Pinholes are used to reduce light rays, but they can also lead to decreased light sensitivity due to insufficient light. To improve light sensitivity, it is preferable to make the pinholes as large as possible within the design limits and to efficiently direct the light entering the pinholes into the light-receiving section.

[0155] Figure 3A is a comparative example without a lens, and is a simplified diagram showing the light rays incident on the light-receiving device. Note that minute reflections at the boundaries of each layer are not shown.

[0156] Most of the light irradiated onto the substrate 120 from an oblique direction is blocked by the light-shielding layer 135. Therefore, most of the light incident on the light-receiving device 150 is light that travels in a straight line or nearly straight line. However, if the width of the pinhole (aperture) is larger than the width of the light-receiving area, some of the light may not enter the light-receiving area, as shown by light rays A and B in Figure 3A.

[0157] Therefore, as shown in Figure 3B, it is preferable to provide a lens 136 in the pinhole (aperture) to refract light rays A and B and direct them into the light-receiving area. However, with hemispherical or nearly hemispherical lenses (hereinafter referred to as hemispherical lenses), a height of approximately half the width of the sub-pixel is required, thus limiting the size of the sub-pixels to which they can be applied.

[0158] The distance between the protective layer 131 and the substrate 120 (the thickness of the adhesive layer 122) is about a few micrometers, regardless of the size of the display device. Therefore, the maximum width of a subpixel in which a hemispherical lens can be used without difficulty is about twice the thickness of the adhesive layer 122 (less than 10 micrometers). In other words, it becomes difficult to apply a hemispherical lens to a display device with subpixels larger than that. Furthermore, although the lens can be formed by coating it with a photosensitive resin, it is difficult to coat such a photosensitive resin to a thickness of 10 micrometers or more. For example, even with high resolution, a display device larger than a smartphone may have subpixels with a width of 10 micrometers or more, making it difficult to use a hemispherical lens.

[0159] Therefore, in one embodiment of the present invention, a substantially trapezoidal lens 133 shown in Figure 4A is used. Here, a substantially trapezoidal lens is a lens in which the cross-sectional shape in the thickness direction including the center of the lens is roughly trapezoidal, or the cross-sectional shape including the central axis (optical axis) of the lens is roughly trapezoidal. Furthermore, the substantially trapezoidal lens has a convex curved surface on the surface including the part corresponding to the leg of the trapezoid, or a convex curved surface extending from the surface including the part corresponding to the leg to the surface including the part corresponding to the top base. Moreover, the substantially trapezoidal lens has a plane on the surface including the part corresponding to the top base of the trapezoid and the surface including the part corresponding to the bottom base of the trapezoid. Alternatively, these two surfaces may be parallel.

[0160] Alternatively, a roughly trapezoidal lens can be described as a lens that is roughly frustum-shaped, having an upper base, a lower base, and a conical surface, where the conical surface is convex, or where the conical surface extends from the conical surface to the upper base.

[0161] In other words, the region near the end of lens 133 acts as a convex lens, refracting light that travels straight into that region and changing its direction of travel. Light that travels straight into other regions (the flat parts) of lens 133 continues to travel straight without changing its direction of travel.

[0162] Therefore, similar to the hemispherical lens 136 shown in Figure 3B, lens 133 can also refract light rays A and B and cause them to enter the light-receiving section. In addition, light that travels straight into the center and vicinity of lens 133 can travel straight into the light-receiving section.

[0163] Therefore, the same effect as the hemispherical lens 136 can be obtained with the roughly trapezoidal lens 133. Because the roughly trapezoidal lens is low in height and thin, it can be applied to sub-pixels with a width of 10 or more μm or more, where the application of a hemispherical lens is difficult. It should also be noted that the roughly trapezoidal lens 133 can be considered a type of plano-convex lens.

[0164] Figure 5A illustrates the plan view and perspective view of lens 133. Figure 5A shows the lens shape corresponding to the pixel arrangement shown in Figure 1A, and is approximately rectangular in top view. Here, the width of the lens can be defined as the diameter W1 of the inscribed circle or the diameter W2 of the circumscribed circle shown in Figure 5A. Lens 133 also has a convex curved surface region 133R near the ends and a planar region 133F in the center and its vicinity. As mentioned above, the convex curved surface region 133R acts as a lens.

[0165] Figure 6A also shows a plan view and perspective view of an example of a lens with a circular top view. In a lens with a circular top view, the diameter W1 of the circle can be defined as the width of the lens.

[0166] Figure 6B also shows plan and perspective views of an example of a lens that can be applied to a delta array and has a roughly hexagonal top view. In a lens with a roughly hexagonal top view, the width of the lens can be defined as the length between opposite sides (W1, W2) or the length corresponding to the diagonal (W3, W4).

[0167] In Figure 5A, an example is shown in which a light-shielding layer 135 is provided around the lens of all subpixels. However, it is also possible to provide the light-shielding layer 135 only around some of the subpixels. For example, as shown in Figure 5B, the light-shielding layer 135 can be provided only around the subpixel having a light-receiving device (corresponding to subpixel 110d in Figure 1). The configuration shown in Figure 5B can also be applied to Figures 6A and 6B.

[0168] Furthermore, although Figure 4A shows the region corresponding to the upper base of the trapezoid as a flat plane, it may also have a slightly convex curved surface.

[0169] Furthermore, while Figure 4A shows an example where the upper bottom side of the lens 133 faces the light-receiving device, as shown in Figure 4B, the lower bottom side of the lens 133 may also face the light-receiving device. In this case, a planarization film 137 is formed on the protective layer 131, and the lens 133 is formed on the planarization film 137. Then, the substrate 120 on which the light-shielding layer 135 is formed is bonded to the lens 133 via the adhesive layer 122.

[0170] Furthermore, although Figure 4A shows a configuration in which the light-shielding layer 135 and the lens 133 do not overlap, a configuration in which the lens 133 overlaps with the edge of the light-shielding layer is also possible, as shown within the dashed circle in Figure 7A. Alternatively, a configuration in which the light-shielding layer 135 overlaps with the edge of the lens 133 is also possible, as shown within the dashed circle in Figure 7B.

[0171] Optical simulations have shown that the amount of light received in the light-receiving section is better when using a roughly trapezoidal lens 133 than when using a hemispherical lens 136.

[0172] Figure 8A shows a typical configuration of the light-receiving device and surrounding elements used in the simulation. Note that the protective layer 131 was omitted in this simulation model. The common electrode consisted of two layers: a translucent conductive film 115a and a semi-reflective electrode 115b. The lens thickness T was 2 μm, the width W of the planar region 133F (Figure 5A) near the center of the lens was 10 μm, the radius of curvature R near the lens edge (corresponding to the convex curved region 133R in Figure 5A) was 4 μm, and the cell gap G (distance from the translucent conductive film 115a to the substrate 120) was 10 μm. The light source was placed on the upper surface of the substrate 120 (thickness 300 μm). Table 1 shows the material, refractive index, reflectance, and absorptance of other elements used in the simulation.

[0173] [Table 1]

[0174] The models used in the simulation included a configuration with a planar region on the lens 133 shown in Figure 8A, a configuration without a lens shown in Figure 3A, a configuration with a hemispherical lens 136 shown in Figure 3B, and a configuration in which a convex surface is added to the planar region of the lens 133, as shown in Figures 8B to 8E. In Figures 8B to 8E, the heights of the convex surfaces added to the planar region of the lens 133 were 0.5 μm, 1 μm, 2 μm, and 3 μm, respectively. The ratio of the width of the reference planar region to the height of the convex surface (hereinafter referred to as the aspect ratio) was 5%, 10%, 20%, and 30%, respectively.

[0175] Figure 9 shows the simulation results of the amount of light received at the light-receiving section using these models, with the amount of light received shown as a relative value with the value without a lens set to 1. The simulation software used was Lighting SimulatorCAD from Best Media.

[0176] The simulation results showed that the light-emitting device using the approximately trapezoidal lens 133 received the most light. Furthermore, the light-receiving amounts for the approximately trapezoidal lens with a flat surface (Figure 5A) and configurations with an aspect ratio of 5% to 20% (Figures 8B to 8D) were nearly identical, and a tendency for light-receiving amounts to decrease was observed when the aspect ratio exceeded 30%.

[0177] As shown in Figure 10A, in the case of a hemispherical lens 136, the interface between the lens and the adhesive layer 122 is spherical, which causes the angle of incidence θ1 of some of the light incident on the lens 136 to be relatively large. Light with a large angle of incidence to this interface undergoes repeated total internal reflection and propagates in a direction different from that of the light-receiving part. For example, it is thought that a similar phenomenon is likely to occur in the case of a lens with an aspect ratio of 30%, as shown in Figure 8E.

[0178] On the other hand, as shown in Figure 10B, in the trapezoidal lens 133, there is a large portion of the interface between the lens 136 and the adhesive layer 122 that is planar. Therefore, for most of the light incident on the lens 133, the angle of incidence θ2 with respect to this interface does not become large. Consequently, the light propagates toward the light-receiving part without undergoing total internal reflection. For example, in the case of lenses with an aspect ratio of 5% to 20%, as shown in Figures 8B to 8D, it is thought that the angle of incidence θ2 does not become large in the same way.

[0179] Therefore, the amount of light received in the light-receiving section is greater when using the approximately trapezoidal lens 133 than when using the hemispherical lens 136. Furthermore, it can be said that using the approximately trapezoidal lens is effective regardless of the size of the sub-pixels. In addition, since the amount of light received is excellent even with lenses with an aspect ratio of up to about 20%, it can be said that the approximately trapezoidal lens has an excellent effect in improving the amount of light received even when the formation of the flat surface is incomplete and it has a slightly convex curve.

[0180] Furthermore, the roughly trapezoidal lens 133, when placed on the light-emitting device 130c, also has the effect of improving the efficiency of light extraction. The lens 133 and the light-emitting device 130c are spaced apart so that their centers overlap.

[0181] It is preferable that the width of the lens 133 provided on the light-emitting device 130c is greater than the width of the light-emitting portion of the light-emitting device 130c. The light-emitting portion is defined as the region where layer 113c and common layer 114 are in contact. If common layer 114 is not provided, the light-emitting portion is defined as the region where layer 113c and common electrode 115 are in contact.

[0182] Here, the lens width is the same as the lens width shown in Figures 5A, 6A, and 6B.

[0183] Figures 11A and 11B illustrate a portion of the light rays emitted by the light-emitting device 130c. Figure 11A is a comparative example without a lens, and Figure 11B is an example with a lens 133. The substantially trapezoidal lens 133 provided on the light-emitting device 130c can have the same configuration as the substantially trapezoidal lens 133 provided on the light-receiving device 150 described above.

[0184] When a light-shielding layer 135 is provided, some of the light emitted obliquely from the light-emitting device 130c is blocked by the light-shielding layer 135 and cannot be emitted to the outside. On the other hand, when a lens 133 is provided, even the light that is blocked in Figure 11A can be emitted to the outside due to refraction at the end of the lens 133. Therefore, by providing a roughly trapezoidal lens 133, the light extraction efficiency can be increased. In other words, a high-brightness display device can be formed.

[0185] Various optical components can be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. In addition, surface protection layers such as an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 120.

[0186] As a surface protective layer, a glass layer or silica layer (SiO xBy providing a protective layer, surface contamination and scratching can be suppressed, which is preferable. Also, as a surface protective layer, DLC (diamond-like carbon), aluminum oxide (AlO2) x ), polyester-based materials, or polycarbonate-based materials may be used. It is preferable to use a material with high transmittance to visible light for the surface protective layer. Furthermore, it is preferable to use a material with high hardness for the surface protective layer.

[0187] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0188] As the substrate 120, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may be used. Glass with a thickness sufficient to provide flexibility may also be used as the substrate 120.

[0189] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0190] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0191] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0192] Furthermore, when a film is used as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display device. Therefore, it is preferable to use a film with a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0193] As the adhesive layer 122, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0194] In one embodiment of the present invention, the display device has an EL layer arranged in an island-like configuration for each light-emitting device, thereby suppressing the generation of leakage current between sub-pixels. This prevents crosstalk caused by unintended light emission, enabling the realization of a display device with extremely high contrast. Furthermore, by providing an insulating layer with a tapered shape at its edges between adjacent island-like EL layers, it is possible to suppress the occurrence of step breaks during the formation of common electrodes. This suppresses connection failures caused by the divided portions in the common layer and common electrodes. Therefore, the display device in one embodiment of the present invention can achieve both high resolution and high display quality.

[0195] Furthermore, a substantially trapezoidal lens is provided on the light-receiving device and light-emitting device of a display device according to one embodiment of the present invention. By providing a substantially trapezoidal lens, the light-receiving device can efficiently receive light incident on the pinhole (aperture) at the light-receiving section, thereby improving the light-receiving sensitivity. In addition, the light-emitting device can refract light emitted toward the edge of the light-shielding layer with the lens and emit it to the outside, thereby improving the light extraction efficiency.

[0196] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0197] (Embodiment 2) This embodiment describes a method for manufacturing a lens for a display device according to one aspect of the present invention. For a description of the constituent materials of each element, please refer to Embodiment 1.

[0198] Figures 12A to 12F illustrate the process of manufacturing the lens 133 formed on the substrate 120. In this embodiment, the process of forming the lens 133 after forming the light-shielding layer 135 is described, but the light-shielding layer 135 may be formed after the lens 133.

[0199] First, a light-shielding layer 135 is formed on the substrate 120 (see Figure 12A). For example, a metal film of a thickness that provides light shielding is formed on the substrate 120, and a resist mask is formed on the metal film using a photolithography process. Then, the light-shielding layer 135 of the desired shape can be formed by etching the metal film. Alternatively, a photosensitive resin may be applied, the photosensitive resin may be partially exposed to light, and the light-shielding layer 135 may be formed by a development process.

[0200] Next, a photosensitive resin is applied to the substrate 120 and the light-shielding layer 135, and a pre-bake is performed to form a resin layer 133a (see Figure 12B). As the photosensitive resin, for example, the material used to form the insulating layer 127 shown in Embodiment 1 can be used. In addition, although an example using a positive-type photosensitive resin is described here, a negative-type photosensitive resin may also be used.

[0201] Next, a photomask 145 is used to shield the area where the lens 133 is to be formed, and the resin layer 133a is exposed (see Figure 12C). When using a negative-type photosensitive resin, a photomask is used that shields the area where the lens 133 is not to be formed.

[0202] Next, a developing process is performed to remove the unnecessary areas of the resin layer 133a and form the resin layer 133b (see Figure 12D). At this point, since the resin layer 133b is unexposed, unreacted components remain and it may be discolored. Since the lens 133 to be formed preferably has high transmittance to visible light, if it is discolored, the resin layer 133b is exposed to accelerate the reaction.

[0203] By accelerating the reaction, a resin layer 133c with improved transmittance can be formed (see Figure 12E). Furthermore, performing such exposure after the development process may lower the post-bake temperature of the resin layer 133c in subsequent processes. Note that if the resin layer 133b is not colored, exposure after the development process may be unnecessary.

[0204] Then, post-baking is performed to reflow and cure the resin layer 133c, forming the lens 133 (Figure 12F).

[0205] Here, the degree of deformation of the resin layer 133c can be varied depending on the post-bake temperature. Figures 13A to 13C are SEM images showing the cross-sectional shape of the lens 133 completed by varying the post-bake temperature.

[0206] If the post-bake temperature is too low (60°C for 15 minutes, see Figure 13A), the reflow process is insufficient, and the resin layer 133c does not deform to have a curved surface near its edges, resulting in a lens shape. If the post-bake temperature is appropriate (80°C for 15 minutes, see Figure 13B), the resin layer 133c deforms so that its center is approximately flat and its edges are curved, resulting in a lens 133 of the desired shape. If the post-bake temperature is too high (100°C for 15 minutes, see Figure 13C), the deformation of the resin layer 133c becomes excessive, resulting in a hemispherical shape instead of a trapezoidal shape. Therefore, it is preferable to perform post-bake at an appropriate temperature.

[0207] Depending on the photosensitive resin used, it may not have the property of reflowing during post-bake, and the shape of the lens 133 may be completed during the process shown in Figure 12D. In that case, post-bake can be performed in the next step to complete the lens 133.

[0208] This embodiment can be combined with other embodiments as appropriate.

[0209] (Embodiment 3) This embodiment describes a pixel layout applicable to a display device according to one aspect of the present invention.

[0210] [Pixel layout] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0211] In this embodiment, the top surface shape of the sub-pixel shown in the figure corresponds to the top surface shape of the light-emitting region or the light-receiving region.

[0212] The top surface shape of the subpixel may include, for example, polygons such as triangles, quadrilaterals (including rectangles and squares), pentagons, polygons with rounded corners, ellipses, or circles.

[0213] Furthermore, the circuit layout constituting the sub-pixel is not limited to the sub-pixel range shown in the figure, but may be arranged outside of it.

[0214] The pixels 110 shown in Figures 14A to 14C are arranged in a stripe pattern.

[0215] Figure 14A shows an example where each subpixel has a rectangular top surface shape, Figure 14B shows an example where each subpixel has a top surface shape formed by connecting two semicircles and a rectangle, and Figure 14C shows an example where each subpixel has an elliptical top surface shape.

[0216] The pixels 110 shown in Figures 14D to 14F have a matrix array applied to them.

[0217] Figure 14D shows an example where each subpixel has a square top surface shape, Figure 14E shows an example where each subpixel has a roughly square top surface shape with rounded corners, and Figure 14F shows an example where each subpixel has a circular top surface shape.

[0218] Figures 14G and 14H show an example where one pixel 110 is composed of 2 rows and 3 columns.

[0219] Pixel 110, shown in Figure 14G, has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and one subpixel (subpixel 110d) in the bottom row (row 2). In other words, pixel 110 has subpixel 110a in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110d across these three columns.

[0220] The pixel 110 shown in Figure 14H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (1st row) and three subpixels 110d in the bottom row (2nd row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (1st column), subpixels 110b and 110d in the middle column (2nd column), and subpixels 110c and 110d in the right column (3rd column). As shown in Figure 14H, by aligning the arrangement of subpixels in the top row and the bottom row, it becomes possible to efficiently remove dust and other debris that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0221] Figure 14I shows an example where one pixel 110 is composed of 3 rows and 2 columns.

[0222] Pixel 110, shown in Figure 14I, has a sub-pixel 110a in the top row (1st row), a sub-pixel 110b in the middle row (2nd row), a sub-pixel 110c spanning from the 1st to the 2nd row, and one sub-pixel (sub-pixel 110d) in the bottom row (3rd row). In other words, pixel 110 has sub-pixels 110a and 110b in the left column (1st column), a sub-pixel 110c in the right column (2nd column), and a sub-pixel 110d spanning these two columns.

[0223] The pixel 110 shown in Figures 14A to 14I is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d. For example, a light-receiving device can be provided in one of the subpixels 110a to 110d, and light-emitting devices can be provided in the other three.

[0224] In each pixel 110 shown in Figures 14A to 14I, it is preferable, for example, that sub-pixel 110a be a sub-pixel R that emits red light, sub-pixel 110b be a sub-pixel G that emits green light, sub-pixel 110c be a sub-pixel B that emits blue light, and sub-pixel 110d be a sub-pixel S having a light-receiving device. With such a configuration, in the pixels 110 shown in Figures 14G and 14H, the layout of R, G, and B becomes a stripe arrangement, which can improve the display quality. Also, in the pixels 110 shown in Figure 14I, the layout of R, G, and B becomes a so-called S-stripe arrangement, which can improve the display quality.

[0225] The wavelength of light detected by the sub-pixel S, which has a light-receiving device, is not particularly limited. The sub-pixel S can be configured to detect either visible light or infrared light, or both.

[0226] If a light-emitting device cannot be provided, the sub-pixels 110a, 110b, 110c, and 110d can be sub-pixels of four colors: R, G, B, and white (W); sub-pixels of four colors: R, G, B, and Y; or sub-pixels of R, G, B, and infrared (IR).

[0227] As shown in Figures 14J and 14K, a pixel can be configured to have five types of subpixels.

[0228] Figure 14J shows an example where one pixel 110 is composed of 2 rows and 3 columns.

[0229] Pixel 110, shown in Figure 14J, has three subpixels (subpixels 110a, 110b, and 110c) in the top row (1st row) and two subpixels (subpixels 110d and 110e) in the bottom row (2nd row). In other words, pixel 110 has subpixels 110a and 110d in the left column (1st column), subpixel 110b in the middle column (2nd column), subpixel 110c in the right column (3rd column), and subpixel 110e extending from the 2nd to the 3rd column.

[0230] Figure 14K shows an example where one pixel 110 is composed of 3 rows and 2 columns.

[0231] Pixel 110, shown in Figure 14K, has subpixel 110a in the top row (1st row), subpixel 110b in the middle row (2nd row), subpixel 110c spanning from the 1st to the 2nd row, and two subpixels (subpixels 110d and 110e) in the bottom row (3rd row). In other words, pixel 110 has subpixels 110a, 110b, and 110d in the left column (1st column), and subpixels 110c and 110e in the right column (2nd column).

[0232] In each pixel 110 shown in Figures 14J and 14K, it is preferable, for example, to set sub-pixel 110a as sub-pixel R that emits red light, sub-pixel 110b as sub-pixel G that emits green light, and sub-pixel 110c as sub-pixel B that emits blue light. With such a configuration, in the pixel 110 shown in Figure 14J, the layout of R, G, and B becomes a stripe arrangement, which can improve the display quality. Also, in the pixel 110 shown in Figure 14K, the layout of R, G, and B becomes a so-called S-stripe arrangement, which can improve the display quality.

[0233] Furthermore, in each pixel 110 shown in Figures 14J and 14K, it is preferable to apply a sub-pixel S having a photodetector to at least one of the sub-pixels 110d and 110e. When photodetectors are used for both sub-pixels 110d and 110e, the configurations of the photodetectors may differ from each other. For example, the wavelength ranges of light detected by each may differ in some respects. Specifically, one of the sub-pixels 110d and 110e may have a photodetector that mainly detects visible light, while the other may have a photodetector that mainly detects infrared light.

[0234] Furthermore, in each pixel 110 shown in Figures 14J and 14K, it is preferable to apply a sub-pixel S having a light-receiving device to one of the sub-pixels 110d and 110e, and a sub-pixel having a light-emitting device that can be used as a light source to the other. For example, it is preferable that one of the sub-pixels 110d and 110e is a sub-pixel IR that emits infrared light, and the other is a sub-pixel S having a light-receiving device that detects infrared light.

[0235] In pixels having sub-pixels R, G, B, IR, and S, an image can be displayed using sub-pixels R, G, and B, while sub-pixel IR is used as a light source to detect the reflected infrared light emitted by sub-pixel IR at sub-pixel S.

[0236] As described above, in one aspect of the present invention, a display device can be configured to have pixels having subpixels with light-emitting devices, and various layouts can be applied to these pixels. Furthermore, in one aspect of the present invention, a display device can be configured to have pixels having both light-emitting devices and light-receiving devices. In this case as well, various layouts can be applied.

[0237] This embodiment can be combined with other embodiments as appropriate.

[0238] (Embodiment 4) This embodiment describes a display device according to one aspect of the present invention.

[0239] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, and as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0240] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television equipment, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0241] [Display Module] Figure 15A shows a perspective view of the display module 280. The display module 280 includes a display device 100A and an FPC 290.

[0242] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0243] Figure 15B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286 composed of multiple wires.

[0244] The pixel section 284 has a plurality of pixels 284a arranged periodically. A magnified view of one pixel 284a is shown on the right side of Figure 15B. Pixels described in the previous embodiment can be used for the pixels 284a. Figure 15B shows an example where the pixel has a configuration similar to that of the pixel 110 shown in Figure 1A.

[0245] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0246] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. A single pixel circuit 283a can be configured to have a circuit that controls the light emission operation of one light-emitting device or the imaging operation of one light-receiving device.

[0247] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0248] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0249] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are superimposed on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, since the wiring length between the circuit section 282 and the pixel circuit section 283 can be shortened, the effects of wiring resistance and wiring capacitance can be reduced, enabling high-speed and low-power operation.

[0250] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as HMDs or AR devices such as glasses. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of a smartphone or a wristwatch-type electronic device.

[0251] [Display device 100A] The display device 100A shown in Figure 16 includes a substrate 301, a light-emitting device 130c, a light-receiving device 150, a capacitor 240, and a transistor 310.

[0252] Substrate 301 corresponds to substrate 291 in Figures 15A and 15B. The laminated structure from substrate 301 down to the insulating layer 255a corresponds to layer 101 containing the transistor in Embodiment 1.

[0253] The transistor 310 is a transistor having a channel-forming region in the substrate 301. For example, a semiconductor substrate such as a single-crystal silicon substrate can be used as the substrate 301. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as either a source or a drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0254] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0255] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0256] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0257] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0258] An insulating layer 255a is provided covering the capacitance 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. A light-emitting device 130c and a light-receiving device 150 are provided on the insulating layer 255c. Figure 16 shows an example in which the light-emitting device 130c and the light-receiving device 150 have the layered structure shown in Figure 1B.

[0259] Pixel electrodes 111c and 111d are electrically connected to either the source or drain of transistor 310 by insulating layers 243, 255a, 255b, and a plug 256 embedded in insulating layer 255c, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The pixel electrode can have a two-layer structure, for example, a reflective electrode and a transparent electrode on the reflective electrode. The height of the upper surface of insulating layer 255c and the height of the upper surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0260] Details regarding the components from the light-emitting device to the substrate 120 can be found in Embodiment 1. The substrate 120 corresponds to the substrate 292 in Figure 15A.

[0261] [Display device 100D] The display device 100D shown in Figure 17 differs from the display device 100A mainly in its transistor configuration. Note that in the following description of the display device, parts that are the same as those described earlier may be omitted.

[0262] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0263] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0264] Substrate 331 corresponds to substrate 291 in Figures 15A and 15B. The laminated structure from substrate 331 down to the insulating layer 255a corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0265] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0266] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0267] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide (also called an oxide semiconductor) film having semiconductor properties. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as a source electrode and a drain electrode.

[0268] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on top of the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. An insulating film similar to that of the insulating layer 332 can be used as the insulating layer 328.

[0269] The insulating layer 328 and the insulating layer 264 are provided with openings that reach the semiconductor layer 321. Inside these openings, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the insulating layer 264, the insulating layer 328, the sides of the conductive layer 325, and the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0270] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0271] The insulating layer 264 and the insulating layer 265 function as an interlayer insulating layer. The insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like into the transistor 320. As the insulating layer 329, an insulating film similar to the insulating layer 328 and the insulating layer 332 can be used.

[0272] The plug 274 that is electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a that covers the side surfaces of the respective openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that contacts the upper surface of the conductive layer 274a. At this time, as the conductive layer 274a, it is preferable to use a conductive material in which hydrogen and oxygen hardly diffuse.

[0273] [Display device 100E] The display device 100E shown in FIG. 18 has a configuration in which a transistor 320A having an oxide semiconductor in a semiconductor in which channels are respectively formed and a transistor 320B are stacked.

[0274] Regarding the transistor 320A, the transistor 320B, and the surrounding configuration, reference can be made to the display device 100D described above.

[0275] Here, although a configuration in which two transistors having an oxide semiconductor are stacked is adopted, the present invention is not limited to this. For example, a configuration in which three or more transistors are stacked may be adopted.

[0276] [Display device 100F] The display device 100F shown in FIG. 19 has a configuration in which a transistor 310 in which channels are formed on a substrate 301 and a transistor 320 in which a semiconductor layer in which channels are formed contains a metal oxide are stacked.

[0277] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0278] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0279] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0280] [Display device 100G] Figure 20 shows a perspective view of the display device 100G, and Figure 21A shows a cross-sectional view of the display device 100G.

[0281] The display device 100G has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 20, substrate 152 is shown with a dashed line.

[0282] The display device 100G includes a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Figure 20 shows an example in which IC 173 and FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Figure 20 can also be described as a display module having the display device 100G, an IC (integrated circuit), and an FPC.

[0283] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. Figure 20 shows an example in which the connection portion 140 is provided so as to surround all four sides of the display portion. At the connection portion 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0284] For example, a scan line drive circuit can be used as circuit 164.

[0285] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0286] Figure 20 shows an example in which IC 173 is provided on the substrate 151 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100G and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0287] Figure 21A shows an example of a cross-section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut.

[0288] The display device 100G shown in Figure 21A includes a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-receiving device 150, etc., between substrates 151 and 152.

[0289] The light-emitting devices 130R and 130G, and the light-receiving device 150P, have the same stacked structure as the light-emitting device and light-receiving device shown in Figure 1B, except that the pixel electrode configuration differs.

[0290] The light-emitting device 130R has a conductive layer 112a, a conductive layer 126a on the conductive layer 112a, and a conductive layer 129a on the conductive layer 126a. All of the conductive layers 112a, 126a, and 129a can be called pixel electrodes, or only a part of them can be called pixel electrodes.

[0291] The light-emitting device 130G has a conductive layer 112b, a conductive layer 126b on the conductive layer 112b, and a conductive layer 129b on the conductive layer 126b.

[0292] The light-receiving device 150P has a conductive layer 112d, a conductive layer 126d on the conductive layer 112d, and a conductive layer 129d on the conductive layer 126d.

[0293] The conductive layer 112a is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The edge of the conductive layer 126a is located outside the edge of the conductive layer 112a. The edges of the conductive layer 126a and the conductive layer 129a are aligned or approximately aligned. For example, conductive layers that function as reflective electrodes can be used for conductive layers 112a and 126a, and a conductive layer that functions as a transparent electrode can be used for conductive layer 129a.

[0294] The conductive layers 112b, 126b, and 129b in the light-emitting device 130G, and the conductive layers 112d, 126d, and 129d in the light-receiving device 150P are the same as the conductive layers 112a, 126a, and 129a in the light-emitting device 130R, so a detailed explanation is omitted.

[0295] In the conductive layers 112a, 112b, and 112d, recesses are formed so as to cover the openings provided in the insulating layer 214. The layer 128 is embedded in the recesses.

[0296] The layer 128 has a function of flattening the recesses of the conductive layers 112a, 112b, and 112d. On the conductive layers 112a, 112b, 112d and the layer 128, conductive layers 126a, 126b, and 126d that are electrically connected to the conductive layers 112a, 112b, and 112d are provided. Therefore, the region overlapping the recesses of the conductive layers 112a, 112b, and 112d can also be used as a light-emitting region or a light-receiving region, and the aperture ratio of the pixel can be increased.

[0297] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be appropriately used for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be applied to the layer 128.

[0298] In addition, lenses 133 and a protective layer 131 are provided on the light-emitting devices 130R, 130G, and the light-receiving device 150P. The protective layer 131 and the substrate 152 are adhered via an adhesive layer 122. A light-shielding layer 135 is provided on the substrate 152. For sealing the light-emitting device, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 21A, the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 122, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. At this time, the adhesive layer 122 may be provided so as not to overlap the light-emitting device. Further, the space may be filled with a resin different from the adhesive layer 122 provided in a frame shape.

[0299] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 112a, 112b, and 112d, a conductive film obtained by processing the same conductive film as conductive layers 126a, 126b, and 126d, and a conductive film obtained by processing the same conductive film as conductive layers 129a, 129b, and 129d. A common layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the common layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the common layer 114. Note that the common layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact and electrically connected.

[0300] The display device 100G is a top-emission type. The light emitted by the light-emitting device is emitted towards the substrate 152. It is preferable to use a material with high transmittance to visible light for the substrate 152. The pixel electrodes contain a material that reflects visible light, and the counter electrodes (common electrodes 115) contain a material that transmits visible light.

[0301] For example, the laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 1.

[0302] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0303] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0304] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0305] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0306] An organic insulating layer is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This makes it possible to suppress the formation of depressions in the insulating layer 214 during processing of conductive layers 112a, 126a, or 129a. Alternatively, depressions may be provided in the insulating layer 214 during processing of conductive layers 112a, 126a, or 129a.

[0307] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0308] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0309] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0310] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0311] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0312] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0313] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0314] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0315] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also referred to as off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0316] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0317] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0318] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, a stable current can be supplied to the light-emitting device even if there are variations in the current-voltage characteristics of the EL device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0319] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0320] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0321] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0322] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Possible atomic ratios of metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near that composition, In:M:Zn=1:1:1.2 or near that composition, In:M:Zn=1:3:2 or near that composition, In:M:Zn=1:3:4 or near that composition, In:M:Zn=2:1:3 or near that composition, In:M:Zn=3:1:2 or near that composition, and In:M:Zn=4:2:3 Examples include compositions near the desired atomic ratio, such as In:M:Zn=4:2:4.1 or near that ratio, In:M:Zn=5:1:3 or near that ratio, In:M:Zn=5:1:6 or near that ratio, In:M:Zn=5:1:7 or near that ratio, In:M:Zn=5:1:8 or near that ratio, In:M:Zn=6:1:6 or near that ratio, In:M:Zn=5:2:5 or near that ratio, etc. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0323] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0324] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0325] All of the transistors in the display unit 162 may be OS transistors, all of the transistors in the display unit 162 may be Si transistors, or some of the transistors in the display unit 162 may be OS transistors and the rest may be Si transistors.

[0326] For example, by using both LTPS transistors and OS transistors in the display unit 162, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In a more preferable example, it is preferable to apply OS transistors to transistors that function as switches for controlling conduction and non-conduction between wiring, and LTPS transistors to transistors that control current.

[0327] For example, one of the transistors in the display unit 162 functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for the drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0328] On the other hand, the other transistor in the display unit 162 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0329] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0330] Furthermore, one embodiment of the present invention is a display device having an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely reduce the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current). With this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting devices, it is possible to achieve a display with as little light leakage (so-called black floating) that may occur when displaying black as possible.

[0331] In particular, even among MML-structured light-emitting devices, applying the aforementioned SBS structure results in a configuration where the layers between light-emitting devices (for example, an organic layer used in common between light-emitting devices, also called a common layer) are separated, thus eliminating or significantly reducing side leakage.

[0332] Figures 21B and 21C show other examples of transistor configurations.

[0333] Transistors 209 and 210 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0334] In the transistor 209 shown in Figure 21B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0335] On the other hand, in the transistor 210 shown in Figure 21C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 21C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 21C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0336] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 112a, 112b, and 112d, a conductive film obtained by processing the same conductive film as conductive layers 126a, 126b, and 126d, and a conductive film obtained by processing the same conductive film as conductive layers 129a, 129b, and 129d. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0337] It is preferable to provide a light-shielding layer 135 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 135 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 164, etc. In addition, various optical components can be arranged on the outside of the substrate 152.

[0338] Materials that can be used for substrate 120 can be applied to substrate 151 and substrate 152, respectively.

[0339] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0340] Furthermore, modified examples of the display device 100G are shown in Figures 22A, 22B, 23A, and 23B. Note that the area near the transistors is omitted from the illustration.

[0341] Figure 22A shows an example where a color filter is provided on the light-emitting device instead of a lens. A red color filter 138R is provided on the red light-emitting device 130R, and a green color filter 138G is provided on the green light-emitting device 130G. Although not shown in the figure, a blue color filter is provided on the blue light-emitting device. This configuration makes it possible to increase the color purity of the light emitted from the light-emitting device to the outside of the substrate 120. In addition, by providing a color filter, reflection from the display surface can be suppressed, eliminating the need for an anti-reflective polarizing plate.

[0342] When using color filters, a white-emitting light-emitting device may be used, as shown in Figure 22B. A pixel emitting red light is provided with a white-emitting light-emitting device 130RW and a red color filter 138R. Similarly, a pixel emitting green light is provided with a white-emitting light-emitting device 130GW and a green color filter 138G. Although not shown, a pixel emitting blue light is provided with a white-emitting light-emitting device and a blue color filter.

[0343] Furthermore, as shown in Figure 23A, the lens and color filter may be arranged on the light-emitting device so that they overlap. For example, a light-shielding layer 135 and a lens 133 are formed on the substrate 152, and a planarization film 139 is formed on the light-shielding layer 135 and the lens 133. Then, on the planarization film 139, color filters 138R and 138G can be formed at positions that overlap with the lens 133, respectively. A blue color filter can be formed in the same manner.

[0344] Alternatively, as shown in Figure 23B, a light-shielding layer 135, color filters 138R and 138G, and a lens 133 that overlaps with the light-receiving device 150P are formed on the substrate 152, and a planarization film 139 is formed on the lens 133 that overlaps with the light-shielding layer 135, color filters 138R and 138G, and the light-receiving device 150P. Then, on the planarization film 139, lenses 133 can be formed at the positions that overlap with the color filters 138R and 138G. Similarly, lenses 133 can also be formed at the positions that overlap with the blue color filter.

[0345] Note that while Figures 23A and 23B illustrate examples using light-emitting devices that emit red and green light, respectively, a light-emitting device that emits white light may also be used.

[0346] This embodiment can be combined with other embodiments as appropriate.

[0347] (Embodiment 5) This embodiment describes an example configuration of a light-emitting device and a light-receiving device that can be used in a display device according to one aspect of the present invention.

[0348] Figure 24A shows a schematic cross-sectional view of the display device 500. The display device 500 includes a light-emitting device 550R that emits red light, a light-emitting device 550G that emits green light, a light-emitting device 550B that emits blue light, and a light-receiving device 560.

[0349] The light-emitting device 550R has a configuration in which two light-emitting units (light-emitting unit 512R_1 and light-emitting unit 512R_2) are stacked between a pair of electrodes (electrode 501 and electrode 502) via a charge generation layer 531. Similarly, the light-emitting device 550G has a light-emitting unit 512G_1, a charge generation layer 531, and a light-emitting unit 512G_2 between a pair of electrodes, and the light-emitting device 550B has a light-emitting unit 512B_1, a charge generation layer 531, and a light-emitting unit 512B_2 between a pair of electrodes.

[0350] The light-receiving device 560 has one light-receiving unit 542 between a pair of electrodes (electrode 501 and electrode 502).

[0351] Electrode 501 functions as a pixel electrode and is provided for each light-emitting device and each light-receiving device. Electrode 502 functions as a common electrode and is provided in common to multiple light-emitting devices and multiple light-receiving devices.

[0352] As shown in Figure 24A, the light-emitting unit 512R_1 has layers 521, 522, 523R, and 524. The light-emitting unit 512R_2 has layers 522, 523R, and 524. The light-emitting device 550R has layer 525 between the light-emitting unit 512R_2 and the electrode 502. Note that layer 525 can also be considered as part of the light-emitting unit 512R_2.

[0353] In a light-emitting device, when electrode 501 functions as the anode and electrode 502 functions as the cathode, layer 521 has, for example, a layer containing a material with high hole injection properties (hole injection layer). Layer 522 has, for example, one or both of a layer containing a material with high hole transport properties (hole transport layer) and a layer containing a material with high electron blocking properties (electron blocking layer). Layer 524 has, for example, one or both of a layer containing a material with high electron transport properties (electron transport layer) and a layer containing a material with high hole blocking properties (hole blocking layer). Layer 525 has, for example, a layer containing a material with high electron injection properties (electron injection layer).

[0354] In a light-emitting device, if electrode 501 functions as the cathode and electrode 502 functions as the anode, for example, layer 521 has an electron injection layer, layer 522 has one or both of an electron transport layer and a hole blocking layer, layer 524 has one or both of a hole transport layer and an electron blocking layer, and layer 525 has a hole injection layer.

[0355] Note that layer 522, light-emitting layer 523R, and layer 524 may have the same configuration (material, film thickness, etc.) in light-emitting unit 512R_1 and light-emitting unit 512R_2, or they may have different configurations.

[0356] In Figure 24A, layers 521 and 522 are shown separately, but this is not the only way to represent them. For example, if layer 521 has the functions of both a hole injection layer and a hole transport layer, or if layer 521 has the functions of both an electron injection layer and an electron transport layer, then layer 522 may be omitted.

[0357] When fabricating a tandem light-emitting device, two light-emitting units are stacked with a charge generation layer 531 in between. The charge generation layer 531 has at least a charge generation region. When a voltage is applied between electrode 501 and electrode 502, the charge generation layer 531 has the function of injecting electrons into one of the light-emitting units 512R_1 and 512R_2, and injecting holes into the other.

[0358] The light-emitting layer 523R of the light-emitting device 550R contains a light-emitting substance (also called a light-emitting material) that emits red light, the light-emitting layer 523G of the light-emitting device 550G contains a light-emitting substance that emits green light, and the light-emitting layer 523B of the light-emitting device 550B contains a light-emitting substance that emits blue light. The light-emitting devices 550G and 550B have a configuration in which the light-emitting layer 523R of the light-emitting device 550R is replaced with either the light-emitting layer 523G or the light-emitting layer 523B, respectively, and the other configurations are the same as those of the light-emitting device 550R.

[0359] Layers 521, 522, 524, and 525 may each have the same configuration (material, film thickness, etc.) for two or more or all color light-emitting devices, or they may have different configurations for all color light-emitting devices.

[0360] In this specification, a configuration in which multiple light-emitting units are connected in series via a charge generation layer 531, such as light-emitting devices 550R, 550G, and 550B, is referred to as a tandem structure. On the other hand, a configuration having one light-emitting unit between a pair of electrodes is referred to as a single structure. The tandem structure may also be called a stacked structure. By using a tandem structure, it is possible to create a light-emitting device that can emit light with high brightness. Furthermore, compared to a single structure, the tandem structure can reduce the current required to obtain the same brightness, thereby improving the reliability of the light-emitting device.

[0361] Furthermore, structures in which at least one light-emitting layer is created for each light-emitting device, such as light-emitting devices 550R, 550G, and 550B, are sometimes called SBS (Side By Side) structures. Because SBS structures allow for the optimization of materials and configurations for each light-emitting device, the degree of freedom in selecting materials and configurations increases, making it easier to improve brightness and reliability.

[0362] If a tandem-structured light-emitting device is applied to a display device 500 according to one aspect of the present invention, and an SBS structure is adopted, it is possible to have both the advantages of a tandem structure and the advantages of an SBS structure. The light-emitting device in the display device 500 shown in Figure 24A has a structure in which two light-emitting units are formed in series, and therefore may be called a two-stage tandem structure. In the two-stage tandem-structured light-emitting device 550R shown in Figure 24A, a second light-emitting unit having a red light-emitting layer is stacked on top of a first light-emitting unit having a red light-emitting layer. Similarly, in the two-stage tandem-structured light-emitting device 550G shown in Figure 24A, a second light-emitting unit having a green light-emitting layer is stacked on top of a first light-emitting unit having a green light-emitting layer, and in the light-emitting device 550B, a second light-emitting unit having a blue light-emitting layer is stacked on top of a first light-emitting unit having a blue light-emitting layer.

[0363] As shown in Figure 12A, the light-receiving unit 542 of the light-receiving device 560 has a layer 522, an active layer 543, and a layer 524.

[0364] The active layer 543 functions as a photoelectric conversion layer. In a photodetector, if electrode 501 functions as the anode and electrode 502 functions as the cathode, for example, layer 522 has a hole transport layer and layer 524 has an electron transport layer. If electrode 501 is the cathode and electrode 502 is the anode, layers 522 and 524 have the opposite configuration to the above.

[0365] Furthermore, layers 522 and 524 of the light-receiving device may each have the same configuration (material, film thickness, etc.) as the light-emitting device of one or more colors or all colors, or they may have a different configuration from the light-emitting device of all colors.

[0366] Figure 24B shows a modified version of the display device 500 shown in Figure 24A. The display device 500 shown in Figure 24B is an example in which layer 525 is shared by multiple light-emitting devices and multiple light-receiving devices, similar to the electrode 502. In this case, layer 525 can be called a common layer. By providing one or more common layers between multiple light-emitting devices and multiple light-receiving devices in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced.

[0367] Layer 525 can function, for example, as an electron injection layer in a light-emitting device and as an electron transport layer in a light-receiving device 560.

[0368] The display device 500 shown in Figure 25A is an example of a light-emitting device in which three light-emitting units are stacked. In Figure 25A, the light-emitting device 550R has a light-emitting unit 512R_3 stacked on top of a light-emitting unit 512R_2 via a charge generation layer 531. The light-emitting unit 512R_3 has the same configuration as the light-emitting unit 512R_2. The same applies to the light-emitting unit 512G_3 of the light-emitting device 550G and the light-emitting unit 512B_3 of the light-emitting device 550B. Note that when a light-emitting device has multiple charge generation layers 531, two or more or all of the multiple charge generation layers 531 may have the same configuration (material, film thickness, etc.), or they may all have different configurations.

[0369] Figure 25B shows an example where n light-emitting units (where n is an integer greater than or equal to 2) are stacked.

[0370] In this way, by increasing the number of stacked light-emitting units, the brightness obtained from the light-emitting device with the same amount of current can be increased in proportion to the number of stacks. Furthermore, by increasing the number of stacked light-emitting units, the current required to obtain the same brightness can be reduced, thus reducing the power consumption of the light-emitting device in proportion to the number of stacks.

[0371] Next, we will describe materials that can be used in light-emitting devices and light-receiving devices.

[0372] Of electrodes 501 and 502, the electrode that extracts light from the light-emitting device preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract the light. Additionally, if the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits both visible and infrared light on the electrode that extracts the light, and a conductive film that reflects both visible and infrared light on the electrode that does not extract the light.

[0373] Furthermore, a conductive film that transmits visible light may also be used on the electrode that does not extract light. In this case, it is preferable to place the electrode between the reflective layer and the light-emitting unit closest to the reflective layer. In other words, the light emitted by the light-emitting device may be reflected by the reflective layer and extracted from the display device.

[0374] As materials for forming a pair of electrodes for a light-emitting device and a light-receiving device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, such materials include metals such as aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, and alloys containing these in appropriate combinations. Other examples of such materials include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide. Furthermore, examples of such materials include aluminum-containing alloys (aluminum alloys) such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). Other materials include elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium, cesium, calcium, strontium), rare earth metals such as europium and ytterbium, alloys containing these in appropriate combinations, graphene, and the like.

[0375] It is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is both transparent and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device. A microcavity structure may also be applied to the light-receiving device.

[0376] Furthermore, the semi-transparent / semi-reflective electrode can have a laminated structure consisting of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that transmits visible light (also called a transparent electrode).

[0377] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm) for the transparent electrode of a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0378] A light-emitting device has at least a light-emitting layer. Furthermore, a light-emitting device may have layers other than the light-emitting layer, including materials with high hole injection properties, materials with high hole transport properties, hole-blocking materials, materials with high electron transport properties, electron-blocking materials, materials with high electron injection properties, or bipolar materials (materials with high electron and hole transport properties). For example, a light-emitting device can have a configuration that includes, in addition to the light-emitting layer, one or more layers from among a hole injection layer, a hole transport layer, a hole-blocking layer, a charge generation layer, an electron-blocking layer, an electron transport layer, and an electron injection layer.

[0379] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0380] The light-emitting layer has one or more types of light-emitting materials. The light-emitting materials may include substances that emit light in colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red, as appropriate. Furthermore, materials that emit near-infrared light may also be used as light-emitting materials.

[0381] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0382] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0383] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0384] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more types of organic compounds may include materials with high hole transport properties (hole transport materials) and / or materials with high electron transport properties (electron transport materials). As the hole transport material, one of the materials with high hole transport properties that can be used in the hole transport layer, as described later, may be used. As the electron transport material, one of the materials with high electron transport properties that can be used in the electron transport layer, as described later, may be used. Furthermore, one or more types of organic compounds may include bipolar materials or TADF materials.

[0385] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0386] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0387] As the hole-transporting material, a material with high hole-transporting properties that can be used in the hole-transporting layer, as described later, can be used.

[0388] As acceptor materials, for example, oxides of metals belonging to groups 4 through 8 of the periodic table can be used. Specifically, these include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. Organic acceptor materials containing fluorine can also be used. Furthermore, organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.

[0389] For example, as a material with high hole injection properties, a material containing a hole transport material and an oxide of a metal belonging to Group 4 to Group 8 of the periodic table (typically molybdenum oxide) may be used.

[0390] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0391] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer is a layer containing a material that has hole-transporting properties and is capable of blocking electrons. Among the hole-transporting materials mentioned above, a material with electron-blocking properties can be used for the electron blocking layer.

[0392] Because electron-blocking layers possess hole-transporting properties, they can also be called hole-transporting layers. Furthermore, among hole-transporting layers, those that exhibit electron-blocking properties can also be called electron-blocking layers.

[0393] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0394] The hole-blocking layer is provided in contact with the light-emitting layer. The hole-blocking layer is a layer containing a material that has electron-transporting properties and is capable of blocking holes. Among the electron-transporting materials mentioned above, a material that has hole-blocking properties can be used for the hole-blocking layer.

[0395] Because hole-blocking layers possess electron-transporting properties, they can also be called electron-transporting layers. Furthermore, among electron-transporting layers, those that exhibit hole-blocking properties can also be called hole-blocking layers.

[0396] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0397] In addition, it is preferable that the difference between the LUMO level of the material with high electron injection property and the work function value of the material used for the cathode is small (specifically, 0.5 eV or less).

[0398] For the electron injection layer, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), lithium 8-(quinolinolato) (abbreviation: Liq), lithium 2-(2-pyridyl)phenolato (abbreviation: LiPP), lithium 2-(2-pyridyl)-3-pyridinolato (abbreviation: LiPPy), lithium 4-phenyl-2-(2-pyridyl)phenolato (abbreviation: LiPPP), lithium oxide (LiO x ), alkali metals such as cesium carbonate, alkaline earth metals, or these compounds can be used. Further, the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a configuration in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.

[0399] The electron injection layer may have an electron transporting material. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used.

[0400] Note that the lowest unoccupied molecular orbital (LUMO) level of the organic compound having a lone pair of electrons is preferably -3.6 eV or more and -2.3 eV or less. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, and the like.

[0401] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0402] As described above, the charge generation layer has at least a charge generation layer. The charge generation region preferably contains an acceptor material, and for example, it is preferable to use a layer that includes a hole transport material and an acceptor material, which can be applied to the hole injection layer described above.

[0403] Furthermore, the charge generation layer preferably includes a layer containing a material with high electron injection potential. This layer can also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing an electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be relaxed, allowing electrons generated in the charge generation region to be easily injected into the electron transport layer.

[0404] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can, for example, a compound of an alkali metal or an alkaline earth metal. Specifically, the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and more preferably has an inorganic compound containing lithium and oxygen (such as lithium oxide (Li2O)). In addition, any other material applicable to the electron injection layer can be suitably used for the electron injection buffer layer.

[0405] The charge generation layer preferably includes a layer containing a material with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation region does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer) and smoothly transferring electrons.

[0406] As the electron relay layer, it is preferable to use a phthalocyanine-based material such as copper(II) phthalocyanine (abbreviated as CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0407] Furthermore, the charge generation region, electron injection buffer layer, and electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape or characteristics.

[0408] The charge generation layer may have a donor material instead of an acceptor material. For example, the charge generation layer may have a layer containing an electron transport material and a donor material, which is applicable to the electron injection layer described above.

[0409] When stacking light-emitting units, the rise in driving voltage can be suppressed by providing a charge generation layer between the two light-emitting units.

[0410] In the display device 500 shown in Figure 24A, the light-emitting material of the light-emitting layer is not particularly limited. For example, in Figure 24A, the two light-emitting layers 523R of the light-emitting device 550R each have a phosphorescent material, the two light-emitting layers 523G of the light-emitting device 550G each have a fluorescent material, and the two light-emitting layers 523B of the light-emitting device 550B each have a fluorescent material.

[0411] Alternatively, in Figure 24A, the two light-emitting layers 523R of the light-emitting device 550R may each have a phosphorescent material, the two light-emitting layers 523G of the light-emitting device 550G may each have a phosphorescent material, and the two light-emitting layers 523B of the light-emitting device 550B may each have a fluorescent material.

[0412] Furthermore, in one aspect of the present invention, a display device may be configured in which fluorescent material is used for all light-emitting layers of the light-emitting devices 550R, 550G, and 550B, or in which phosphorescent material is used for all light-emitting layers of the light-emitting devices 550R, 550G, and 550B.

[0413] Furthermore, in Figure 24A, a configuration in which a phosphorescent material is used for the light-emitting layer 523R of light-emitting unit 512R_1 and a fluorescent material is used for the light-emitting layer 523R of light-emitting unit 512R_2, or a configuration in which a fluorescent material is used for the light-emitting layer 523R of light-emitting unit 512R_1 and a phosphorescent material is used for the light-emitting layer 523R of light-emitting unit 512R_2, that is, a configuration in which different light-emitting materials are used for the first stage light-emitting layer and the second stage light-emitting layer, may also be applied. Although the description here specifically refers to light-emitting units 512R_1 and 512R_2, the same configuration can be applied to light-emitting units 512G_1 and 512G_2, and light-emitting units 512B_1 and 512B_2.

[0414] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0415] The active layer of a light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0416] As for the n-type semiconductor material of the active layer, fullerene (for example, C 60 , C 70 Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Examples of fullerene derivatives include [6,6]-Phenyl-C 71 -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C 61 -butyric acid methyl ester (abbreviation: PC60BM), 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fulrerene-C 60 Examples include (abbreviated as ICBA).

[0417] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI), and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviated as FT2TDMN).

[0418] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0419] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0420] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0421] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0422] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0423] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0424] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0425] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0426] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). For example, the photodetector may have a configuration that includes, in addition to the active layer, one or both of a hole transport layer and an electron transport layer. Furthermore, it may further include layers such as a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, or an electron blocking material. For the layers other than the active layer of the photodetector, for example, materials that can be used in the light-emitting devices described above can be used.

[0427] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0428] This embodiment can be combined with other embodiments as appropriate.

[0429] (Embodiment 6) This embodiment describes a display device having a light detection function according to one aspect of the present invention.

[0430] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. In addition, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (such as a finger, hand, or pen) can be detected.

[0431] Furthermore, in one embodiment of the present invention, the light-emitting device can be used as the light source for the sensor. In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting device of the display unit, the light-receiving device can detect the reflected light (or scattered light), thus enabling imaging or touch detection even in dark places.

[0432] Therefore, it is not necessary to provide a light receiving unit and a light source separately from the display device, and the number of components in the electronic device can be reduced. For example, there is no need to separately provide a biometric authentication device or a capacitive touch panel for scrolling, etc., which are provided in the electronic device. Therefore, by using a display device according to one aspect of the present invention, it is possible to provide an electronic device with reduced manufacturing costs.

[0433] Specifically, a display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, an organic EL device is used as the light-emitting device and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0434] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source while the remaining subpixels display an image.

[0435] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0436] For example, an image sensor can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0437] For example, an image sensor can be used to image the area around the eyes, the surface of the eyes, or the inside of the eyes (such as the fundus) of the wearable device user. Therefore, the wearable device can be equipped with the ability to detect one or more of the user's blinking, pupil movement, and eyelid movement.

[0438] Furthermore, the light-receiving device can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor).

[0439] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0440] A touch sensor can detect an object by making direct contact with the display device. A near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it, in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0441] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz). In addition, the drive frequency of the touch sensor or near touch sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration makes it possible to achieve low power consumption and to increase the response speed of the touch sensor or near touch sensor.

[0442] Furthermore, in a display device according to one aspect of the present invention, a lens can be provided on the light-receiving device. By making the width of the lens larger than the width of the light-receiving portion, the light-collecting ability can be increased, and the light sensitivity of the light-receiving device can be improved.

[0443] The display device 100 shown in Figures 26A to 26C has a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device between substrate 351 and substrate 359.

[0444] The functional layer 355 includes circuits for driving a light-receiving device and circuits for driving a light-emitting device. The functional layer 355 may include one or more of the following: switches, transistors, capacitors, resistors, wiring, and terminals. However, when the light-emitting device and light-receiving device are driven in a passive matrix manner, the configuration may be made without switches and transistors.

[0445] For example, as shown in Figure 26A, when a finger 352 touches the display device 100, it reflects the light emitted by the light-emitting device in layer 357, which has a light-emitting device. The light-receiving device in layer 353 detects this reflected light. This makes it possible to detect that the finger 352 has come into contact with the display device 100.

[0446] Furthermore, as shown in Figures 26B and 26C, the device may also have a function to detect or image objects that are close to (but not in contact with) the display device. Figure 26B shows an example of detecting a person's finger, and Figure 26C shows an example of detecting information around, on the surface of, or inside a person's eye (such as the number of blinks, eyeball movements, and eyelid movements).

[0447] This embodiment can be combined with other embodiments as appropriate.

[0448] (Embodiment 7) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 27 to 29.

[0449] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0450] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0451] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0452] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0453] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0454] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0455] Figures 27A to 27D illustrate an example of a wearable device that can be worn on the head. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device that has the function to display at least one of the following content types, such as AR, VR, SR, and MR, it is possible to enhance the user's sense of immersion.

[0456] The electronic device 700A shown in Figure 27A and the electronic device 700B shown in Figure 27B each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0457] A display device according to one embodiment of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying extremely high resolution can be created. Furthermore, in the display device according to one embodiment of the present invention, since the light emitted from the light-emitting part is extracted through a lens, the light extraction efficiency is high, and an extremely bright image can be displayed. Therefore, when used as an electronic device capable of AR display, an image with good visibility can be displayed even when ambient light is strong.

[0458] Furthermore, if the display device has a light-receiving device, it can capture an image of the pupil and perform iris authentication. It can also perform eye-tracking using the same light-receiving device. Eye-tracking allows the device to identify what the user is looking at and their location, enabling it to select functions on the electronic device and execute software accordingly.

[0459] Electronic devices 700A and 700B can each project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0460] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B can each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0461] The communications unit has a wireless communication device, which can supply video signals and the like. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0462] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0463] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0464] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, and optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0465] When using an optical touch sensor, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light-receiving device. The active layer of the photoelectric conversion device can be made of either an inorganic semiconductor or an organic semiconductor, or both.

[0466] The electronic device 800A shown in Figure 27C and the electronic device 800B shown in Figure 27D each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0467] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, an electronic device capable of displaying extremely high resolution can be created. This allows the user to experience a high level of immersion.

[0468] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0469] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing either electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0470] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0471] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. While Figure 27C and other figures illustrate the attachment portion as resembling the temples (or arms) of eyeglasses, it is not limited to this shape. The attachment portion 823 only needs to be wearable by the user; for example, it may be helmet-shaped or band-shaped.

[0472] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0473] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0474] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This allows users to enjoy video and audio simply by wearing the electronic device 800A, without needing separate audio equipment such as headphones, earphones, or speakers.

[0475] Electronic devices 800A and 800B may each have input terminals. These input terminals can be connected to cables that supply video signals from video output devices, etc., and power for charging batteries located within the electronic devices.

[0476] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 27A has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 27C has a function for transmitting information to the earphone 750 through its wireless communication function.

[0477] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 27B has an earphone section 727. For example, the earphone section 727 and the control section can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control section may be located inside the housing 721 or the mounting section 723.

[0478] Similarly, the electronic device 800B shown in Figure 27D has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it facilitates storage.

[0479] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a sound-collecting device such as a microphone can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0480] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0481] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0482] The electronic device 6500 shown in Figure 28A is a portable information terminal that can be used as a smartphone.

[0483] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0484] A display device according to one embodiment of the present invention can be applied to the display unit 6502. In this display device according to one embodiment of the present invention, since the light emitted from the light-emitting unit is extracted through a lens, the light extraction efficiency is high, and an extremely bright image can be displayed.

[0485] Figure 28B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0486] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0487] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown). The function of the touch sensor panel can also be performed by a light-receiving device in a display device according to one aspect of the present invention. The light-receiving device in a display device according to one aspect of the present invention has a configuration that detects light through a lens, has high light sensitivity, and has excellent touch position detection capability. Furthermore, the light-receiving device can also acquire images for fingerprint authentication.

[0488] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0489] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0490] Figure 28C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0491] A display device according to one embodiment of the present invention can be applied to the display unit 7000. In this display device according to one embodiment of the present invention, since the light emitted from the light-emitting unit is extracted through a lens, the light extraction efficiency is high, and an extremely bright image can be displayed.

[0492] The television device 7100 shown in Figure 28C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0493] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (sender to receiver) or two-way (sender to receiver, or receiver to receiver, etc.) information communication.

[0494] Figure 28D shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0495] A display device according to one embodiment of the present invention can be applied to the display unit 7000. In this display device according to one embodiment of the present invention, since the light emitted from the light-emitting unit is extracted through a lens, the light extraction efficiency is high, and an extremely bright image can be displayed.

[0496] Figures 28E and 28F show examples of digital signage.

[0497] The digital signage 7300 shown in Figure 28E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0498] Figure 28F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0499] In Figures 28E and 28F, a display device according to one embodiment of the present invention can be applied to the display unit 7000. In this embodiment of the present invention, since the light emitted from the light-emitting unit is extracted through a lens, the light extraction efficiency is high, and an extremely bright image can be displayed.

[0500] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0501] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000, but also allows the user to operate it intuitively. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability. The touch panel can also be configured as a light-receiving device of a display device according to one aspect of the present invention. The light-receiving device of a display device according to one aspect of the present invention has a configuration that detects light through a lens and has high light sensitivity. Therefore, it is possible to create a touch panel with high sensitivity and excellent touch position detection capability.

[0502] Furthermore, as shown in Figures 28E and 28F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0503] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0504] The electronic equipment shown in Figures 29A to 29G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0505] The electronic devices shown in Figures 29A to 29G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0506] The details of the electronic devices shown in Figures 29A to 29G will be described below. A display device according to one embodiment of the present invention can be applied to these electronic devices. In this display device according to one embodiment of the present invention, the light emitted from the light-emitting unit is extracted through a lens, resulting in high light extraction efficiency and the ability to display extremely bright images. Furthermore, these electronic devices can also function as touch sensor panels. This touch sensor panel function can also be performed by a light-receiving device in this display device according to one embodiment of the present invention. The light-receiving device in this display device according to one embodiment of the present invention has a configuration that detects light through a lens, and is characterized by high light sensitivity and excellent touch position detection capability. Furthermore, the light-receiving device can also acquire images for fingerprint authentication.

[0507] Figure 29A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 28A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0508] Figure 29B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. The user can also check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display and decide whether or not to answer a call without taking the PDA 9102 out of their pocket.

[0509] Figure 29C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0510] Figure 29D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0511] Figures 29E to 29G are perspective views showing a foldable personal information terminal 9201. Figure 29E shows the personal information terminal 9201 in an unfolded state, Figure 29G shows it in a folded state, and Figure 29F shows a perspective view of the state in between, transitioning from one of Figures 29E or 29G to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0512] This embodiment can be combined with other embodiments as appropriate. [Explanation of Symbols]

[0513] 100A: Display device, 100D: Display device, 100E: Display device, 100F: Display device, 100G: Display device, 100: Display device, 101: Layer, 110a: Sub-pixel, 110b: Sub-pixel, 110c: Sub-pixel, 110d: Sub-pixel, 110e: Sub-pixel, 110: Pixel, 111c: Pixel electrode, 111d: Pixel electrode, 112a: Conductive layer, 112b: Conductive layer, 112d: Conductive layer, 113_1: Light-emitting unit, 113_2: Light-emitting unit, 113_3: Charge generation layer, 113c: Layer, 113d: Layer, 114: Common layer, 115a: Translucent conductive film, 115b: Semi-reflective electrode, 1 15: Common electrode, 118c: Mask layer, 118d: Mask layer, 120: Substrate, 122: Adhesive layer, 123: Conductive layer, 125: Insulating layer, 126a: Conductive layer, 126b: Conductive layer, 126d: Conductive layer, 127: Insulating layer, 128: Layer, 129a: Conductive layer, 129b: Conductive layer, 129d: Conductive layer, 130c: Light-emitting device, 130G: Light-emitting device, 130GW: Light-emitting device, 130R: Light-emitting device, 130RW: Light-emitting device, 131: Protective layer, 133a: Resin layer, 133b: Resin layer, 133c: Resin layer, 133F: Planar region, 133R: Convex curved region, 133: Lens, 135: Light-shielding layer, 136: Lens, 137: Planarization film, 138G: Color filter, 138R: Color filter, 139: Planarization film, 140: Connector, 145: Photomask, 150P: Light-receiving device, 150: Light-receiving device, 151: Substrate, 152: Substrate, 162: Display unit, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 201: Transistor, 204: Connector, 205: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer ,218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitance, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 255c: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer,274: Plug, 280: Display module, 281: Display unit, 282: Circuit unit, 283a: Pixel circuit, 283: Pixel circuit unit, 284a: Pixel, 284: Pixel unit, 285: Terminal unit, 286: Wiring unit, 290: FPC, 291: Substrate, 292: Substrate, 301: Substrate, 310: Transistor, 311: Conductive layer, 312: Low-resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320A: Transistor, 320B: Transistor, 320: Transistor, 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 32 7: conductive layer, 328: insulating layer, 329: insulating layer, 331: substrate, 332: insulating layer, 351: substrate, 352: finger, 353: layer, 355: functional layer, 357: layer, 359: substrate, 500: display device, 501: electrode, 502: electrode, 512B_1: light-emitting unit, 512B_2: light-emitting unit, 512B_3: light-emitting unit, 512G_1: light-emitting unit, 512G_2: light-emitting unit, 512G_3: light-emitting unit, 512R_1: light-emitting unit, 512R_2: light-emitting unit, 512R_3: light-emitting unit, 521: layer, 522: layer, 523B: light-emitting layer, 523 G: Light-emitting layer, 523R: Light-emitting layer, 524: Layer, 525: Layer, 531: Charge generation layer, 542: Light-receiving unit, 543: Active layer, 550B: Light-emitting device, 550G: Light-emitting device, 550R: Light-emitting device, 560: Light-receiving device, 700A: Electronic equipment, 700B: Electronic equipment, 721: Housing, 723: Mounting part, 727: Earphone part, 750: Earphone, 751: Display panel, 753: Optical component, 756: Display area, 757: Frame, 758: Nose pad, 800A: Electronic equipment, 800B: Electronic equipment, 820: Display unit, 821: Housing, 822: Communication unit, 82 3: Mounting unit, 824: Control unit, 825: Imaging unit, 827: Earphone unit, 832: Lens, 6500: Electronic equipment, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand,7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display Part, 9002: Camera, 9003: Speaker, 9005: Operation Key, 9006: Connection Terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal Digital Information Terminal, 9102: Personal Digital Information Terminal, 9103: Tablet Terminal, 9200: Personal Digital Information Terminal, 9201: Personal Digital Information Terminal,

Claims

1. It has a first pixel and a second pixel, The first pixel described above has a light-emitting device, The second pixel comprises a light-receiving device and a lens, The light-emitting device and the light-receiving device have a shared electrode. The lens and the light receiving device have overlapping regions. The width of the lens is greater than the width of the light-receiving portion of the light-receiving device. The aforementioned lens has a cross-sectional shape that is approximately trapezoidal in the thickness direction including the optical axis. The surface including the aforementioned roughly trapezoidal legs is a convex surface. The surface including the upper base of the roughly trapezoidal shape and the light-receiving part are arranged to face each other. The surface including the upper base of the aforementioned roughly trapezoidal shape has a planar region, The first pixel and the second pixel are provided adjacent to each other, The light-emitting device is of the tandem type, The tandem-type light-emitting device has a plurality of light-emitting units, The aforementioned plurality of light-emitting units are display devices that emit light of the same color.

2. In claim 1, A display device having a light-shielding layer formed around the aforementioned lens.

3. In claim 1 or claim 2, The lens and the light-receiving device are provided as display devices spaced apart from each other so that their centers overlap.

4. It has a first pixel and a second pixel, The first pixel comprises a light-emitting device and a first lens, The second pixel comprises a light-receiving device and a second lens. The light-emitting device and the light-receiving device have a shared electrode. The first lens and the light-emitting device have overlapping regions. The second lens and the light-receiving device have overlapping regions. The width of the first lens is greater than the width of the light-emitting portion of the light-emitting device. The width of the second lens is greater than the width of the light-receiving portion of the light-receiving device. The first lens and the second lens have a substantially trapezoidal cross-sectional shape in the thickness direction including the optical axis. The surface including the aforementioned roughly trapezoidal legs is a convex surface. The surface of the first lens including the upper base of the substantially trapezoidal shape and the light-emitting portion are arranged to face each other. The surface of the second lens including the upper base of the substantially trapezoidal shape and the light-receiving portion are arranged to face each other. The surface of the first lens including the upper base of the substantially trapezoidal shape has a planar region, The surface of the second lens including the upper base of the substantially trapezoidal shape has a planar region, The first pixel and the second pixel are provided adjacent to each other, The light-emitting device is of the tandem type, The tandem-type light-emitting device has a plurality of light-emitting units, The aforementioned plurality of light-emitting units are display devices that emit light of the same color.

5. In claim 4, A display device having a light-shielding layer formed around the first lens and the second lens.

6. In claim 4, A display device having a light-shielding layer formed around the second lens.

7. In any one of claims 4 to 6, A display device wherein the first lens and the light-emitting device are provided spaced apart so that their centers overlap, and the second lens and the light-receiving device are provided spaced apart so that their centers overlap.

8. Having a display device according to any one of claims 1 to 7, An electronic device that acquires a fingerprint image using the aforementioned light-receiving device and performs fingerprint authentication.

Images