Sputtering device

Abstract

To supply a gas across the whole surface of a target.SOLUTION: A sputtering device (1) includes a vacuum vessel (2) including at least one target holder (32) for holding a target (30). The target holder includes: a gas introduction part (51) for introducing a gas (10); and a pair of gas discharge ports (54) installed in at least part of opposite positions around the target and discharging the gas into the vacuum vessel.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a sputtering apparatus.

Background Art

[0002] Conventionally, various sputtering apparatuses have been proposed. As an example of a sputtering apparatus, a magnetron sputtering apparatus can be cited. In the magnetron sputtering apparatus, a magnetic field is formed on the surface of a target by a magnet provided on the back surface of the target, and after the gas in the magnetic field is made into plasma, ions of the plasma gas are made to collide with the target. When ions collide with the target, sputter particles fly out from the target, and a substrate provided opposite to the target is film-formed by these particles.

[0003] In a sputtering apparatus, it is known that unevenness in the film thickness of a thin film formed on a substrate can occur due to the density of gas on the target. An example of a technique for suppressing the occurrence of this unevenness is disclosed in Patent Document 1. In the sputtering apparatus of Patent Document 1, two targets are provided as a set in a chamber into which a sputter gas is introduced. And, the sputtering apparatus of Patent Document 1 is provided with a gas introduction port for introducing a reactive gas from both sides of a set of targets, and an exhaust port for exhausting the reactive gas from between a set of targets.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the sputtering apparatus of Patent Document 1, a gas inlet is provided on one of the long sides of one of the targets in a set, and an exhaust port is provided on the long side opposite to that long side. Therefore, the amount of reactive gas supplied to the target may be uneven in the direction perpendicular to the two long sides of the target (the width direction of the target). As a result, there may be inconsistencies in the amount of sputtered particles ejected across the entire surface of the target. Consequently, there may be inconsistencies in the thickness of the thin film formed on the substrate.

[0006] Therefore, one aspect of the present invention aims to realize a sputtering apparatus capable of supplying gas over the entire surface of a target. [Means for solving the problem]

[0007] To solve the above problems, a sputtering apparatus according to one aspect of the present invention is a sputtering apparatus for depositing a film on a substrate by sputtering a target in a vacuum chamber, wherein the vacuum chamber comprises at least one holding portion for holding the target, the holding portion comprising a gas introduction portion for introducing gas into the holding portion, and a pair of openings provided in the holding portion at least a part of the periphery of the target placement position when the target placement position is viewed from a vertically downward direction, and at positions facing each other on either side of the target placement position, for releasing the gas introduced into the holding portion into the vacuum chamber. [Effects of the Invention]

[0008] According to one aspect of the present invention, gas can be supplied over the entire surface of the target. [Brief explanation of the drawing]

[0009] [Figure 1] This figure shows an example of the overall configuration of a sputtering apparatus according to Embodiment 1. [Figure 2]This is a view of the target holder according to Embodiment 1, taken along the arrow AA in Figure 1, and is a top view of the target holder in its assembled state. [Figure 3] This is a view of the target holder according to Embodiment 1, taken from the direction of arrow BB in Figure 1, and is a bottom view of the target holder in its assembled state. [Figure 4] This is a view of the target holder according to Embodiment 1, taken from the perspective of arrow CC in Figure 1. [Figure 5] This is a view of the target holder according to Embodiment 1, taken along the arrow DD in Figure 1. [Figure 6] This is a view of the target holder according to Embodiment 1, taken along the EE arrow in Figure 1. [Figure 7] This is a cross-sectional view of the FF of the target holder according to Embodiment 1 in Figure 2. [Figure 8] This is a cross-sectional view of the target holder according to Embodiment 1 in Figure 2. [Figure 9] This is an enlarged view of section H in Figure 2. [Figure 10] This is a cross-sectional view showing the detailed configuration inside the vacuum vessel according to Embodiment 2. [Figure 11] This is a view of the target holder according to Embodiment 2, as seen from arrow II in Figure 10, and is a bottom view of the target holder in its assembled state. [Figure 12] This is a schematic diagram of the magnetic field strength adjustment plate according to Embodiments 1 and 3. [Modes for carrying out the invention]

[0010] [Embodiment 1] One embodiment of the present invention will be described in detail below with reference to Figures 1 to 9.

[0011] <Overall configuration of the sputtering apparatus> First, the overall configuration of the sputtering apparatus 1 according to this embodiment will be described using Figure 1. Figure 1 is a diagram showing an example of the overall configuration of the sputtering apparatus 1 according to Embodiment 1.

[0012] As shown in FIG. 1, the sputtering apparatus 1 is an apparatus that sputters a target 30 in a vacuum chamber 2 into which a sputtering gas 10 is introduced to form a film on a substrate 12.

[0013] Specifically, the sputtering apparatus 1 includes a vacuum chamber 2 that is evacuated by a vacuum evacuation device 4. The vacuum chamber 2 is electrically grounded, and a sputtering gas 10 is introduced therein. The gas 10 is supplied from a gas source 6 to a target holder 32 through a gas introduction pipe 50 and a gas introduction part 51 while its flow rate is adjusted by a flow rate regulator 8. Then, the gas 10 is introduced into the vacuum chamber 2 through the target holder 32. Insulating parts 43 are provided between the gas introduction part 51 and the upper surface part 3 of the vacuum chamber 2, and between the gas introduction part 51 and the target holder 32. The gas 10 is, for example, argon gas. When reactive sputtering is performed, the gas 10 may also be a mixed gas of argon gas and a reactive gas (for example, oxygen gas, nitrogen gas, etc.). The reactive gas is also referred to as a reactive gas.

[0014] A substrate holder 14 for holding the substrate 12 is provided in the vacuum chamber 2. In this embodiment, a substrate bias power supply 16 is provided, and a substrate bias voltage Vs is applied to the substrate holder 14. The substrate bias voltage Vs may be a negative DC voltage, or may also be a negative pulse voltage, an AC voltage, etc. Also, the substrate holder 14 may be electrically grounded when the substrate bias voltage Vs is not applied to the substrate 12. Note that 40 is an insulating part having a vacuum sealing function. Further, the substrate 12 is an object to be processed on which a thin film is formed by sputtered particles emitted from the target 30. As the substrate 12, a glass substrate, a semiconductor substrate, etc. are used, but it is not limited thereto.

[0015] Further, on the upper surface portion 3 of the vacuum chamber 2, a target holder (holding portion) 32 for holding the target 30 is provided at a position facing the substrate holder 14. In FIG. 1, three target holders 32 are provided, but the number of target holders 32 is not limited, and at least one target holder 32 may be provided. By the target holder 32, the target 30 is held at a position facing the substrate 12 inside the vacuum chamber 2. The planar shape of the target 30 is, for example, rectangular, but is not limited thereto, and may be circular or the like.

[0016] The material of the target 30 may be selected according to the film to be formed on the substrate 12. For example, when forming an oxide semiconductor thin film on the substrate 12, the target 30 is, for example, an oxide semiconductor composed of In-Ga-Zn-O (indium-gallium-zinc-oxygen), In-Sn-Zn-O (indium-tin-zinc-oxygen), or the like. However, the material of the target 30 is not limited to this.

[0017] A target bias power supply 34 is connected to the target 30 via the target holder 32. The target bias power supply 34 supplies (applies) a target bias voltage Vt to the target 30. The target bias voltage Vt is a voltage for attracting ions (meaning positive ions in the present application) in the plasma 22 to the target 30 and sputtering them, and is, for example, a negative DC voltage. The AC voltage may be, for example, a high-frequency voltage on the order of MHz such as 13.56 MHz, or a low-frequency voltage having a frequency lower than the output of the high-frequency power supply 24 (for example, 13.56 MHz) (for example, about 10 kHz to 100 kHz). When using a low-frequency voltage, it becomes easy to avoid interference with the plasma generation operation using the high-frequency power supply 24.

[0018] Furthermore, an antenna 20 is disposed inside the vacuum chamber 2. In the present embodiment, four antennas 20 are disposed to face each other so as to sandwich the target 30 held by the target holder 32 from both sides.

[0019] Each antenna 20 is connected to a high-frequency power supply 24 via a matching circuit 26. Specifically, a matching circuit 26 is connected to one end of each antenna 20, and the other end of each antenna 20 is electrically grounded. One end of the high-frequency power supply 24 is also electrically grounded. Note that 41 is an insulating part with a vacuum sealing function. Alternatively, a high-frequency power supply 24 and a matching circuit 26 may be provided for each antenna 20.

[0020] The high-frequency power supply 24 supplies high-frequency power Pr to each antenna 20. Specifically, by supplying high-frequency power Pr in parallel to each antenna 20, an inductively coupled plasma 22 is generated near the surface of the target 30. The frequency of the high-frequency power Pr output from the high-frequency power supply 24 is, for example, a common 13.56 MHz, but is not limited to this.

[0021] Furthermore, the sputtering apparatus 1 is equipped with a control device 46. The control device 46 comprehensively controls all parts of the sputtering apparatus 1. In particular, the control device 46 controls the power supply from the high-frequency power supply 24 and the target bias power supply 34. The control device 46 also controls the flow rate regulator 8 to control the flow rate of the gas 10 introduced into the vacuum chamber 2.

[0022] Note that the gas introduction pipe 50, gas-insulated pipe 501, and gas introduction section 51 connected to the flow regulator 8 are provided on each of the target holders 32, but are not shown in Figure 1. Also, the high-frequency power supply 24 is connected to each antenna 20 via a matching circuit 26, but is not shown in Figure 1. Furthermore, the target bias power supply 34 is connected to the target 30 held in each of the target holders 32, but is not shown in Figure 1.

[0023] <Configuration of the upper part of the vacuum container> Next, using Figure 1, the specific configuration of the area near the upper surface 3 of the vacuum vessel 2 will be described in detail. The area near the upper surface 3 mainly consists of: Antenna 20 generates plasma 22 near the surface of target 30. • Target holder 32 that holds the target 30 A system is in place.

[0024] (antenna) As shown in Figure 1, the antenna 20 is positioned inside the vacuum vessel 2, near the target holder 32 (specifically, near the surface of the target 30 held by the target holder 32). In this embodiment, as shown in Figure 1, multiple antennas 20 are positioned to sandwich the target 30 held by the target holder 32 from both sides, for example, along the sides of the rectangular target 30.

[0025] By arranging multiple antennas 20 in this manner, it becomes possible to generate plasma 22 so as to face the entire surface of the target 30. This makes it possible to sputter the entire surface of the target 30, thereby improving the utilization efficiency of the target 30. However, if this point is not taken into consideration, for example, one antenna 20 may be arranged along one side of the target 30.

[0026] Each antenna 20 is connected to a matching circuit 26. Each antenna 20 may have a solid structure or a hollow structure (e.g., tubular or cylindrical). In the case of a hollow structure, a water-cooled structure may be used, in which a cooling water channel is provided inside and cooling water is circulated to cool each antenna 20. Alternatively, each antenna 20 may have a structure in which a capacitor is inserted in the middle of the antenna conductor.

[0027] The shape of the antenna 20 is not limited to the shapes described above; it may be a rod shape, or it may be U-shaped, C-shaped, coil-shaped, etc. Furthermore, the shape of the antenna 20 may correspond to the planar shape of the target 30. For example, if the planar shape of the target 30 is circular, the planar shape of the antenna 20 may be circular.

[0028] Furthermore, regardless of its structure or shape, the antenna 20 has a structure in which the antenna conductor is housed inside an insulating material.

[0029] The structure or shape of the antenna 20 described above is merely an example; the antenna 20 can have any structure or shape capable of generating plasma 22.

[0030] Furthermore, the antenna 20 is supplied with high-frequency power Pr independently of the supply of the target bias voltage Vt to the target 30. Specifically, the control device 46 (see Figure 1) independently controls the target bias power supply 34 that supplies the target bias voltage Vt to the target 30 and the high-frequency power supply 24 that supplies high-frequency power Pr to the antenna 20.

[0031] (Target holder configuration) The target holder 32 is composed of a structural member that defines the structure of the target holder 32, a gas member that introduces gas 10 near the target 30, and a magnetic circuit member that forms a magnetic field near the surface of the target 30. The target holder 32 is also composed of an electrode member that applies a voltage to the target holder 32, an insulating member for insulating the electrode member, and a cooling member for cooling the target holder 32.

[0032] Each component of the target holder 32 described above will be explained using Figures 2 to 8. Figure 2 is a view of the target holder 32 according to Embodiment 1, taken along the arrow AA in Figure 1, and is a top view of the target holder 32 in its assembled state. Figure 3 is a view of the target holder 32 according to Embodiment 1, taken along the arrow BB in Figure 1, and is a bottom view of the target holder 32 in its assembled state. Figure 4 is a view of the target holder 32 according to Embodiment 1, taken along the arrow CC in Figure 1. Figure 5 is a view of the target holder 32 according to Embodiment 1, taken along the arrow DD in Figure 1. Figure 6 is a view of the target holder 32 according to Embodiment 1, taken along the arrow EE in Figure 1. Figure 7 is a cross-sectional view of the target holder 32 according to Embodiment 1, taken along the arrow FF in Figure 2. Figure 8 is a cross-sectional view of the target holder 32 according to Embodiment 1, taken along the line G-G in Figure 2.

[0033] Note that, for the sake of clarity, Figure 3 omits the illustration of the target 30 held in the target holder 32.

[0034] (Structural components of the target holder) First, the structural components of the target holder 32 include, for example, a target body 321 and a backing plate 322, as shown in Figures 7 and 8.

[0035] The target body 321 is a component that defines the various components of the target holder 32. The target body 321 has grooves and holes that define the various components, or grooves and holes that assemble the various components. The functions and configurations of the various components will be described later.

[0036] The backing plate 322 is a plate on which the target 30 is attached. The position on the surface of the backing plate 322 facing the substrate holder 14 where the target 30 is attached (placed) is referred to as the target placement position 30a (see also Figures 3 and 6). The backing plate 322 is located below the target body 321. The backing plate 322 includes a gas component (for example, a gas outlet 54).

[0037] The shape (planar shape) of the target body 321 and backing plate 322 when viewed from a vertically downward direction should be designed to match the shape of the target 30 to which it is to be mounted. For example, if the planar shape of the target 30 to be mounted is rectangular, then the planar shapes of the target body 321 and backing plate 322 should be designed to be rectangular.

[0038] If the planar shape of the target body 321 and backing plate 322 is rectangular, the corners of the target body 321 and backing plate 322 may be chamfered. In this embodiment, the planar shape of the target body 321 and backing plate 322 is rectangular, but the corners of the target body 321 and backing plate 322 are rounded (R-shaped). This shape is due to limitations in the processing of the upper surface portion 3 on which the target body 321 and backing plate 322 are provided, and to the reduction of the risk of abnormal discharge occurring at the edges of the target body 321 and backing plate 322. However, if this point is not considered, the planar shape of the target body 321 and backing plate 322 may be rectangular with unchamfered corners.

[0039] In this specification, when the planar shape of the target body 321, the planar shape of the backing plate 322 (the planar shape of the target placement position 30a), and the planar shape of the target 30 are described as rectangular, it should be noted that this has two meanings. Specifically, in this specification, the term "rectangular" includes (i) a shape with unchamfered corners (a rectangle in the usual sense) and (ii) a shape with chamfered corners.

[0040] In this embodiment, the longitudinal direction of the target body 321 and the backing plate 322 extends in the Y-axis direction (for example, the depth direction of the paper in Figures 7 and 8). That is, as shown in Figure 3 for example, the longitudinal direction (long side) of the target placement position 30a extends in the Y-axis direction, and the target 30 is attached to the backing plate 322 such that the longitudinal direction (long side) of the target 30 extends in the Y-axis direction.

[0041] (Gas component of the target holder) As shown in Figure 7, the gas component of the target holder 32 includes a gas introduction pipe 50, a gas insulating pipe 501, a gas introduction section 51, a gas path (main path) 52, a gas path cover 521, an orifice 522, a gas branch path (branch path) 53, and a gas outlet (opening) 54.

[0042] The gas introduction piping 50 is a route (pipeline) for introducing the gas 10 supplied from the gas source 6 into the target holder 32, and is connected between the gas source 6 and the gas introduction section 51 (see also Figure 1). Also, as shown in Figure 1, a flow regulator 8 is provided in the middle of the gas introduction piping 50. In addition, the gas insulation piping 501 is a pipe for insulating the gas introduction piping 50 from the gas introduction section 51.

[0043] The gas introduction section 51 is a path formed in the target body 321 for introducing gas 10 into the target holder 32, and is in communication with the gas introduction piping 50 and the gas path 52. One gas introduction section 51 is provided for each target holder 32, and as shown in Figure 2, it is provided at the end of the target holder 32.

[0044] The gas path 52 is a path formed in the target body 321 that receives the gas 10 introduced from the gas inlet 51 and directs it to the gas branch path 53, and is in communication with the gas inlet 51 and the gas branch path 53. In this embodiment, the gas path 52 is located on the upper side of the target body 321 and is provided near the center of the target body 321 when viewed from a vertically downward direction, and is a path formed to extend in the longitudinal direction of the target body 321 (see Figure 6). The gas 10 introduced from the gas inlet 51 is distributed in the longitudinal direction of the target body 321 by the gas path 52.

[0045] The gas path cover 521 is a cover for the gas path 52. The gas path cover 521 reduces the possibility of gas 10 leaking out of places other than the gas inlet 51 and the gas branch path 53 (see Figure 5). The gas path cover 521 is also equipped with an orifice 522 that allows gas 10 from the gas inlet 51 to flow into the gas path 52. By providing the orifice 522 in the gas path cover 521, the gas pressure upstream of the orifice 522 can be increased.

[0046] Here, the gas inlet 51 has a vacuum seal function because the flange portion of the gas inlet is pressed down by the insulating portion 43. The gas inlet 51 is also connected to the gas path cover 521 and is at the same potential as the target bias voltage Vt. Furthermore, the gas inlet pipe 50 and the gas inlet 51 are insulated by the gas insulating pipe 501. For this reason, depending on the high-frequency potential generated in the gas inlet pipe 50 and the gas inlet 51 and the pressure of the gas 10 in the gas inlet pipe 50 and the gas inlet 51, a discharge may occur in the gas 10. To prevent such a discharge from occurring, the length of the gas inlet pipe 50 is specified, and an orifice 522 is provided in the gas path cover 521.

[0047] The gas branching path 53 is a path formed in the target body 321 that introduces the gas 10 introduced from the gas path 52 to the gas outlet 54, and is in communication with the gas path 52 and the gas outlet 54. In this embodiment, multiple gas branching paths 53 are formed in the width direction (X-axis direction) of the target body 321, opposite each other on either side of the gas path 52 (see Figure 6).

[0048] Specifically, as shown in Figure 6, one end of the gas branch path 53 extends along the longitudinal direction (Y-axis direction) of the gas path 52 and communicates with the gas path 52 on each of the two sides of the gas path 52. The other end of the gas branch path 53 communicates with the gas outlet 54 at the lower surface of the target body 321 and at a position opposite the target placement position 30a in the width direction of the target body 321.

[0049] The gas outlet 54 is an opening formed in the backing plate 322 that releases the gas 10 introduced from the gas branching path 53 into the vacuum container 2, and is in communication with the gas branching path 53. In this embodiment, multiple gas outlets 54 are provided across the entire length of the opposing long sides of the target placement position 30a when viewed from a vertical downward direction (see Figure 6). In this embodiment, the multiple gas outlets 54 are provided substantially evenly along each long side of the target placement position 30a, and the gas outlets 54 provided on each long side are arranged to face each other. Therefore, the gas 10 introduced in the gas introduction section 51 is supplied to the target 30 attached to the target placement position 30a from both long sides of the target 30 so as to be substantially uniform across the entire surface of the target 30. Thus, compared to the case where the gas 10 is supplied from one side of the target 30, the gas 10 can be supplied substantially uniformly across the entire surface of the target 30.

[0050] The placement and number of gas outlets 54 are not limited to those described above, and should be adjusted so that the gas 10 released from the gas outlets 54 is supplied substantially uniformly across the entire surface of the target 30.

[0051] For example, the gas outlet 54 may be provided along the entire length of both short sides of the target placement position 30a, or it may be provided on both the long side and the short side of the target placement position 30a. However, providing it on the long side of the target placement position 30a makes it easier to supply the gas 10 substantially uniformly across the entire surface of the target 30.

[0052] Furthermore, it is not necessarily required that the pair of gas outlets 54 be positioned opposite each other. For example, the number of gas outlets 54 may differ on opposite sides of the target placement position 30a. Also, the size of each opening of the gas outlets 54 may differ. Moreover, one gas outlet 54 may be provided along the side of the target 30.

[0053] In other words, the gas outlet 54 only needs to be provided in a location that extends over at least a portion of the area around the target placement position 30a and is opposite to the target placement position 30a, so that the gas 10 is supplied substantially uniformly to the entire surface of the target 30.

[0054] Here, the diameter of the gas branching path 53 (cross-sectional area in the YZ section) is smaller than the diameter of the gas path 52 (cross-sectional area in the XZ section) (see Figures 6 and 7). Therefore, the gas 10 flowing through the gas branching path 53 flows less easily than the gas 10 flowing through the gas path 52. Consequently, the pressure of the gas 10 in the gas path 52 can be increased, and as a result, the pressure can be equalized throughout the entire gas path 52. Therefore, gas 10 can be supplied to each gas branching path 53 almost equally. In addition, the flow rate of the gas 10 introduced into the target holder 32 is adjusted to be constant. Therefore, by making the diameter of the gas branching path 53 smaller than the diameter of the gas path 52, and making the diameter of the gas outlet 54 smaller than the diameter of the gas branching path 53, the flow velocity of the gas 10 released from the gas outlet 54 can be increased. Therefore, the gas 10 can be dispersed so that there are fewer dense and sparse areas on the entire surface of the target 30.

[0055] (Electrode members and insulating members of the target holder) As shown in Figures 2 and 3, the electrode members of the target holder 32 include an electrode 71 and an anode 72. Also, as shown in Figure 8, the insulating members of the target holder 32 include an insulating bush 421, a first insulating plate 422, and a second insulating plate 423.

[0056] Electrode 71 is an electrode that inputs the target bias voltage Vt to the target holder 32. One electrode 71 is provided for each target holder 32, and as shown in Figure 2, it is provided at the end of the target holder 32 adjacent to the gas introduction section 51. The target body 321, backing plate 322, and target 30 are charged with the target bias voltage Vt via electrode 71.

[0057] The insulating bush 421 is a bush that insulates the bolt that fixes the target body 321 to the upper surface portion 3. In this embodiment, multiple insulating bushes 421 are provided along the longitudinal direction (Y-axis direction) of the target holder 32, at positions opposite each other with the magnetic field strength adjustment plate 61 in between (see Figure 2).

[0058] The first insulating plate 422 is an insulating member provided on a plane parallel to the plane on which the target 30 is provided, between the upper surface 3 and the target body 321. Specifically, the first insulating plate 422 is provided between the gas path cover 521 and the first magnetic plate 63.

[0059] The second insulating plate 423 is an insulating member provided between the upper surface 3 and the target body 321, on a plane perpendicular to the plane on which the target 30 is provided. The second insulating plate 423 is provided so as to surround the four corners of the target body 321.

[0060] The insulating bush 421, the first insulating plate 422, and the second insulating plate 423, which are insulating members, have the function of insulating the target body 321 and backing plate 322, which are charged with the target bias voltage Vt, from the electrically grounded vacuum vessel 2 and upper surface portion 3.

[0061] The anode 72, along with the parallel magnetic field formed between the ends of the third magnetic plate 67 (described later), is an electrode that captures electrons (secondary electrons) generated by ion collisions in the target 30 near the target 30. This increases the density of the plasma 22 near the target 30. The anode 72 is electrically grounded.

[0062] Secondary electrons from target 30 are trapped by the parallel magnetic field, thus reducing the possibility of secondary electrons incident on the surface of substrate 12. This reduces the possibility of the substrate 12 temperature rising. Furthermore, by setting the magnetic field strength of the parallel magnetic field to a low level, secondary electrons will annihilate without cyclotron motion even if they are not trapped by the parallel magnetic field. Secondary electrons will annihilate, for example, by incident on the surrounding walls or by recombination in space. Therefore, the influence of secondary electrons on the densification of plasma 22 near the surface of substrate 12 can be reduced.

[0063] In this embodiment, as shown in Figures 3 and 8, the anode 72 is provided near the target placement position 30a and has an annular shape similar to the outer edge of the target placement position 30a. In this embodiment, the anode 72 is provided so as to cover the gas outlet 54 and the outer edge of the target 30 placed at the target placement position 30a. Furthermore, the anode 72 is provided on the target holder 32 so as to have a gap between it and the outer edge of the target 30. Therefore, the gas 10 released from the gas outlet 54 can be diffused from this gap toward the target 30. In addition, the anode 72 prevents the third magnetic plate 67, which will be described later, from coming into contact with the plasma 22. Therefore, the risk of impurities being generated inside the vacuum vessel 2 due to the third magnetic plate 67 coming into contact with the plasma 22 can be reduced.

[0064] (Regarding magnetic circuits) Before describing the magnetic circuit components of the target holder 32, let's explain the magnetic circuit itself. The magnetic circuit is a circuit that generates a magnetic field, composed of a magnet and a magnetic component that is magnetized by the magnet.

[0065] A magnet is a substance that generates a magnetic field through magnetomotive force and allows magnetic flux to flow to the outside of the magnet. A magnetic component is a component that allows the magnetic flux generated by the magnet to pass through. Examples of magnetic components include yokes and ferromagnetic materials with high magnetic permeability such as iron.

[0066] A gap, or air gap, may be formed within the magnetic circuit. This gap may be formed between two magnetic members forming the magnetic circuit. A substance with a lower permeability than the magnetic members (e.g., air) is inserted into the gap. Therefore, the magnetic resistance in the gap is greater than that in the magnetic members. Consequently, by adjusting the width of the gap in the magnetic circuit (the distance between the two magnetic members), the overall magnetic resistance of the magnetic circuit can be changed.

[0067] (Magnetic circuit component of the target holder) As shown in Figure 8, the magnetic circuit member of the target holder 32 is a member that forms the magnetic circuit described above, and comprises a magnet 65 and a magnetic member. The magnetic member comprises a magnetic field strength adjustment plate (magnetic adjustment member) 61, a magnetic path bolt (fixing member) 62, a first magnetic plate 63, a magnet holding part 64, a second magnetic plate 66, and a third magnetic plate 67.

[0068] The magnetic field strength adjustment plate 61 is a magnetic member provided on the upper surface 3 of the vacuum vessel 2 that is exposed to the atmosphere outside (i.e., the upper surface 320 of the target holder 32). The magnetic field strength adjustment plate 61 is a pair of magnetic members that extend in the longitudinal direction of the target holder 32 (see Figure 2). A gap 61a is formed between the pair of magnetic field strength adjustment plates 61. In other words, the gap 61a is defined by the magnetic field strength adjustment plate 61. In addition, the magnetic field strength adjustment plate 61 has a plurality of elongated holes 61b that pass through the magnetic path bolts 62 and extend in the width direction (X-axis direction) of the gap 61a (see Figures 2 and 9). Figure 9 is an enlarged view of section H in Figure 2.

[0069] The magnetic path bolts 62 are magnetic members that fix each of the magnetic field strength adjustment plates 61 to the target holder 32. Specifically, the magnetic path bolts 62 are passed through the elongated holes 61b of the magnetic field strength adjustment plate 61 and fixed to the first magnetic plate 63, thereby fixing the magnetic field strength adjustment plate 61 to the target holder 32.

[0070] The length of the elongated hole 61b in the width direction (X-axis direction) is greater than the shaft diameter of the magnetic path bolt 62. Therefore, the penetration position of the magnetic path bolt 62 in the elongated hole 61b can be changed. In other words, the fixing position of the magnetic field strength adjustment plate 61 relative to the target holder 32 can be changed by the length of the elongated hole 61b in the width direction. Thus, the width of the gap 61a can be adjusted by adjusting the fixing position of the magnetic field strength adjustment plate 61. In this way, the magnetic field strength adjustment plate 61 and the magnetic path bolt 62 function as an adjustment mechanism for adjusting the width of the gap 61a.

[0071] In this embodiment, both magnetic field strength adjustment plates 61 have elongated holes 61b, but this is not the only configuration. For example, the elongated holes 61b may be formed in only one of the magnetic field strength adjustment plates 61, and the other magnetic field strength adjustment plate 61 may be fixed to the upper surface portion 3. Even in this case, the position of one magnetic field strength adjustment plate 61 relative to the other magnetic field strength adjustment plate 61 can be changed, thereby allowing adjustment of the width of the gap 61a.

[0072] The first magnetic plate 63 is a pair of magnetic members that extend in the longitudinal direction of the target holder 32 (see Figure 4). Each of the first magnetic plates 63 is fixed between the first insulating plate 422 and the upper surface portion 3 so as to correspond to the two magnetic field strength adjustment plates 61.

[0073] The magnet holding portion 64 is a pair of magnetic members that hold the magnets 65. The magnet holding portion 64 extends in the longitudinal direction of the target holder 32, and each of the magnet holding portion 64 is capable of holding multiple magnets 65 (see Figure 4). Each of the magnet holding portions 64 is positioned opposite and in close proximity to each of the first magnetic plates 63. The magnet holding portion 64 and the first magnetic plate 63 may be in contact. That is, a portion of the first magnetic plate 63 may be provided for holding the magnets 65.

[0074] The magnet 65 is a component that has magnetic strength (magnetomotive force) capable of magnetizing a magnetic member. For example, a semi-permanent magnet can be used as the magnet 65, in which case a desired magnetic circuit can be constructed inexpensively and easily. As for the magnet 65, magnets with different magnetic poles are used in one magnet holder 64 and the other magnet holder 64. For example, one magnet holder 64 holds a magnet 65 with an N pole, and the other magnet holder 64 holds a magnet 65 with a S pole.

[0075] The second magnetic plate 66 is a pair of magnetic members provided in contact with each of the magnet holding portions 64, and extends in the longitudinal direction of the target holder 32 (see Figure 5). Each of the second magnetic plates 66 is fixed between the second insulating plate 423 and the upper surface portion 3. The second magnetic plate 66 may be provided at a position separated from the magnet holding portion 64, provided that a magnetic circuit can be formed.

[0076] The third magnetic plate 67 is a pair of magnetic members provided in contact with each of the second magnetic plates 66, and extends in the longitudinal direction of the target holder 32. The third magnetic plate 67 is fixed between the anode 72 and the second magnetic plate 66 by fixing members (e.g., bolts) that fix the anode 72 to the second magnetic plate 66 (see Figure 8). Furthermore, when viewed from a vertically downward direction, the third magnetic plate 67 is positioned opposite the target 30 located at the target placement position 30a, with the target 30 in between. That is, the third magnetic plate 67, together with the anode 72, is provided to cover the gas outlet 54.

[0077] As described above, a magnetic circuit is formed by the magnetic field strength adjustment plate 61, the magnetic path bolt 62, the first magnetic plate 63, the magnet holder 64, the magnet 65, the second magnetic plate 66, and the third magnetic plate 67. That is, the magnetomotive force of the magnet 65 appears at the ends of each third magnetic plate 67, and a parallel magnetic field is formed between the ends of the third magnetic plates 67.

[0078] (Cooling component for the target holder) As shown in Figures 2, 3, and 7, the cooling member of the target holder 32 is a member that water-cools the target 30 and includes a cooling water inlet 81 and a cooling water path 82.

[0079] The cooling water inlet 81 cools the target holder 32 by supplying and draining cooling water to and from the target holder 32. As shown in Figure 2, a cooling water inlet 81 is provided for each target holder 32, and it is located at the end of the target holder 32 opposite to the end where the gas introduction section 51 is provided. A refrigerant other than water may be used as the cooling water.

[0080] The cooling water path 82 is a U-shaped groove provided on the underside of the target body 321 along the longitudinal direction of the target body 321 (see Figures 3 and 7). Cooling water supplied from the water inlet of the cooling water port 81 flows in a U-shape and is drained from the drain port of the cooling water port 81, thereby cooling the target holder 32.

[0081] <Measures for homogenizing film thickness distribution> In order to make the film thickness distribution of the thin film deposited on the substrate 12 uniform, - Uniform distribution (pressure distribution) of gas 10 on the surface of target 30. - Uniform distribution of gas 10 among the 30 targets • Parallel magnetic field formation region on the surface of target 30 This will be one of the important elements. We will explain each of these and discuss strategies in detail.

[0082] (Gas distribution on the target surface) In this embodiment, the sputtering apparatus 1 performs sputtering by releasing gas 10 into the vacuum chamber 2 from a plurality of gas outlets 54 provided in the longitudinal direction of the target holder 32, flanking the target placement position 30a. As described above, the anode 72 has a gap between it and the target 30 and is provided so as to cover the outer edge of the target 30. That is, the anode 72 is provided below the target 30 and protrudes toward the target 30. Therefore, the gas 10 released from the gas outlets 54 is released toward the surface of the target 30 in the direction of the protrusion of the anode 72, i.e., toward the central region of the target 30. As a result, the sputtering apparatus 1 can distribute the gas 10 over the entire surface of the target 30.

[0083] The flow regulator 8 adjusts the flow rate of the gas 10, allowing the gas 10 to be distributed at a nearly uniform concentration across the entire surface of the target 30. As a result, sputtered particles can be released from the target 30 nearly uniformly, and the thickness of the thin film deposited on the substrate 12 can be made nearly uniform. In other words, the thickness distribution of the substrate 12 can be made uniform.

[0084] (Gas distribution between targets) In this embodiment, multiple target holders 32 are provided for sputtering a large substrate. Each target holder 32 is provided with multiple gas outlets 54 as described above. Therefore, in each target holder 32, the gas 10 released from the gas outlets 54 is supplied over the entire surface of the target 30. In addition, the flow rate regulator 8 adjusts the total flow rate supplied to each gas inlet 51, and the pipelines (piping) such as each gas inlet 51 are designed so that the gas 10 flows substantially evenly through each gas inlet 51. Therefore, the amount of gas 10 released from the gas outlets 54 can be made uniform in each target holder 32. Consequently, the distribution of gas 10 in each target holder 32 can be made uniform, and thus the film thickness distribution of the substrate 12 facing each target holder 32 can be made uniform. Note that each target holder 32 may also be provided with an individual flow rate regulator 8. Even in this case, the flow rate of gas 10 flowing through each gas inlet 51 can be made uniform.

[0085] Furthermore, in this embodiment, the sputtering apparatus 1 releases the gas 10 to the target 30 from a position close to the target 30 on both long sides of the target 30. Therefore, the distance between the targets 30 can be shortened compared to a configuration in which reactive gas is introduced from both sides of a pair of targets 30 and the reactive gas is exhausted from between the pair of targets 30 (e.g., the sputtering apparatus in Patent Document 1). In other words, the pitch between the target holders 32 can be reduced. As a result, the area of ​​the substrate 12 that does not face the target 30 can be reduced, and the film thickness distribution of the substrate 12 can be made more uniform.

[0086] Furthermore, in this embodiment, one vacuum evacuation device 4 is provided. Also, the vacuum evacuation device 4 is located at a different position from the substrate holder 14, which is located in the center of the bottom surface of the vacuum container 2. Therefore, the distances between each target holder 32 and the vacuum evacuation device 4 are different. As a result, the vacuum evacuation speed at the position of each target holder 32 is different.

[0087] Taking this into consideration, in order to further equalize the distribution of gas 10 to each target 30, for example, a flow rate regulator 8 may be provided for each target holder 32. This allows the flow rate of gas 10 to be adjusted according to the vacuum evacuation speed at the location of each target holder 32. Therefore, the distribution of gas 10 to each target 30 can be made uniform regardless of the location of the vacuum evacuation device 4, and as a result, the film thickness distribution of the substrate 12 can be made uniform.

[0088] Alternatively, a plurality of vacuum pipes connected to the vacuum evacuation device 4 may be arranged in positions symmetrical with respect to the group of target holders 32. For example, the vacuum pipes may be provided on two opposing side walls of the vacuum container 2 that extend along the longitudinal direction of the target holders 32. Alternatively, for example, the vacuum pipes may be provided at the bottom of the vacuum container 2, near each of the two side walls. In this case, the difference in vacuum evacuation velocity at the position of each target holder 32 can be reduced, thereby making the distribution of gas 10 to each target 30 more uniform. The same effect can also be obtained with the configuration of Embodiment 2, which will be described later.

[0089] (Effects due to magnetic circuits) As shown in Figure 8, a pair of third magnetic plates 67 are positioned near the target 30, and magnetic poles are formed on each of the third magnetic plates 67. Therefore, a magnetic field distribution (parallel magnetic field) having magnetic field line components substantially parallel to the surface can be formed at a position facing at least the entire surface of the target 30. As a result, electrons (secondary electrons) generated by ion collisions at the target 30 can be efficiently captured.

[0090] Furthermore, by forming a parallel magnetic field opposite the entire surface of the target 30, it becomes possible to uniformly trap electrons across the entire surface of the target 30. As described above, by arranging multiple antennas 20, it is possible to generate plasma 22 opposite the entire surface of the target 30. However, even in this case, there is a possibility that the density of plasma 22 may become localized on the surface of the target 30. By trapping electrons through the formation of the parallel magnetic field described above, the localization of the plasma 22 density can be suppressed. Therefore, it becomes possible to uniformly sputter the entire surface of the target 30. Consequently, the film thickness distribution of the substrate 12 can be made uniform.

[0091] Since electrons are emitted from the target 30 over a wide area, the further the magnetic poles formed on the third magnetic plate 67 are from the surface of the target 30, the lower the probability of capturing the electrons (capture rate, yield), and the larger the configuration of the sputtering apparatus 1 becomes. By placing the third magnetic plate 67 near the target 30, it is possible to improve the electron yield while miniaturizing the sputtering apparatus 1 when the third magnetic plate 67 is installed.

[0092] Furthermore, the magnetic field strength (magnetic flux density) formed by the magnetic circuit is less than the strength required to generate a magnetron discharge. In the sputtering apparatus 1, since plasma 22 is generated by the antenna 20, it is not necessary to generate a magnetic field of high strength that would cause a magnetron discharge.

[0093] (Adjustment of magnetic field by magnetic circuit) Furthermore, the strength of the parallel magnetic field is adjusted by the magnetic strength of the magnet 65 and the width of the gap 61a formed between the pair of magnetic field strength adjustment plates 61. As described above, the magnetic field strength adjustment plate 61 has an elongated hole 61b that extends in the width direction of the magnetic field strength adjustment plate 61. Therefore, the width of the gap 61a can be adjusted by changing the fixing position of the magnetic field strength adjustment plate 61 by the magnetic path bolt 62 within the range of the elongated hole 61b. As a result, the magnetic resistance in the gap 61a can be adjusted, and thus the magnetic resistance of the magnetic circuit can be adjusted. Consequently, the strength of the parallel magnetic field can be adjusted, and electrons can be uniformly trapped over the entire surface of the target 30. The width of the gap 61a should be adjusted to a width that can form a parallel magnetic field with sufficient strength to uniformly trap electrons over the entire surface of the target 30.

[0094] Furthermore, in this embodiment, the width of the gap 61a can be adjusted for each target holder 32. Therefore, electrons can be uniformly captured across the entire surface of the target 30 in each target holder 32.

[0095] Furthermore, a substance having a different magnetic permeability than the magnetic member (air in this embodiment) is inserted into the gap 61a. Therefore, by forming the gap 61a in the magnetic circuit, a magnetic circuit with a different magnetic resistance than a magnetic circuit formed only by a magnet and a magnetic member can be formed.

[0096] Furthermore, since the permeability of air is lower than that of the magnetic material, the air gap 61a has high magnetic resistance. Therefore, as the width of the air gap 61a increases, the strength of the parallel magnetic field decreases, and its strength distribution worsens. If the strength distribution of the parallel magnetic field worsens, it may not be possible to form a parallel magnetic field over the entire surface of the target 30, potentially leading to uneven electron trapping. Accordingly, the width of the air gap 61a is set to a width that allows for the formation of a parallel magnetic field at a position opposite the entire surface of the target 30, taking into account the permeability of the material (in this case, air) filling the air gap 61a.

[0097] (Miniaturization of sputtering equipment) In this embodiment, a magnetic circuit and a gas outlet 54 are provided inside the target holder 32. Furthermore, due to the provision of the gas outlet 54 inside the target holder 32, the gas path 52 and gas branch path 53 are also provided inside the target holder 32. Therefore, since there is no need to construct gas paths 10 between the target holders 32, multiple target holders 32 can be mounted on the upper surface 3 so that they are adjacent to each other. Consequently, the sputtering apparatus 1 can be miniaturized. Also, by miniaturizing the sputtering apparatus 1, the area of ​​the substrate 12 that does not face the target 30 can be reduced. Therefore, the film thickness distribution of the substrate 12 can be made more uniform.

[0098] (Small summary) As described above, the distribution of gas 10 on the surface of the target 30 can be made uniform by adjusting the position of the gas outlet 54 described above. In other words, the gas 10 can be supplied uniformly over the entire surface of the target 30 by adjusting the position. Therefore, the film thickness distribution of the substrate 12 can be made uniform. Furthermore, by adjusting the width of the gap 61a described above, the strength of the parallel magnetic field can be adjusted so that electrons can be uniformly trapped over the entire surface of the target 30. This adjustment also makes it possible to make the film thickness distribution of the substrate 12 uniform.

[0099] Furthermore, to adjust the film thickness distribution of the substrate 12, the flow rate of the gas 10 can be adjusted using the flow rate regulator 8, and the position of the magnetic field strength adjustment plate 61 can be adjusted (adjustment of the gap 61a) can be adjusted outside the vacuum chamber 2. Therefore, the film thickness distribution of the substrate 12 can be easily adjusted without opening the vacuum chamber 2.

[0100] [Embodiment 2] Hereinafter, another embodiment will be described in detail with reference to Figures 10 and 11. For the sake of clarity, components having the same function as those described in the above embodiment will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0101] In Embodiment 1, the gas 10 was centrally exhausted by a single vacuum exhaust device 4, but in Embodiment 2, the sputtering apparatus 1 is further equipped with multiple exhaust ports (exhaust sections) 55. Figure 10 is a cross-sectional view showing the detailed configuration inside the vacuum vessel 2 according to Embodiment 2. Figure 11 is a view of the target holder 32 according to Embodiment 2, taken along the HH arrow in Figure 10, and is a bottom view of the target holder 32 in its assembled state.

[0102] As shown in Figure 10, the exhaust port 55 is connected to a vacuum evacuation device that evacuates the inside of the vacuum container 2 and is an exhaust port that exhausts the gas 10 released from the gas outlet 54. The exhaust port 55 is located on the upper surface 3, adjacent to the target holder 32. In this embodiment, it is located between multiple target holders 32. As shown in Figure 11, multiple exhaust ports 55 are provided along the longitudinal direction of the target holder 32.

[0103] By providing an exhaust port 55 near the target holder 32 in this manner, an airflow is generated in which the gas 10 released from the gas outlet 54 flows toward the exhaust port 55. This airflow makes it possible to make the distribution of gas 10 across the entire surface of the target 30 more uniform. Furthermore, since the exhaust port 55 is provided between multiple target holders 32, the airflow generated in each target holder 32 tends to become uniform. Therefore, it becomes easier to make the distribution of gas 10 uniform in each target 30, and as a result, the film thickness distribution of the substrate 12 can be made uniform.

[0104] The exhaust port 55 may be provided adjacent to the target holder 32, along the shorter direction of the target holder 32. In other words, the exhaust port 55 only needs to be provided in at least a portion of the periphery of the target holder 32. Providing the exhaust port 55 along the longitudinal direction of the target holder 32 allows for a more uniform distribution of the gas 10 across the entire surface of the target 30. Alternatively, the exhaust port 55 may be a single opening provided along either the longitudinal or short direction of the target holder 32.

[0105] Furthermore, the target holder 32 may be configured to be only one inside the vacuum container 2. Even in this case, by providing the exhaust port 55 adjacent to the target holder 32 as described above, the distribution of gas 10 across the entire surface of the target 30 can be made more uniform. In other words, by providing the exhaust port 55 near one target holder 32, the distribution of gas 10 across the entire surface of the target 30 can be made more uniform.

[0106] Furthermore, in this embodiment, the vacuum evacuation device 4 does not need to be directly provided in the vacuum vessel 2. Alternatively, the vacuum evacuation device 4 may be stopped during sputtering, and exhaust may occur only through the exhaust port 55. In these configurations, the gas 10 is exhausted only through the exhaust port 55 without using the vacuum evacuation device 4. Therefore, the unevenness in the exhaust speed of the gas 10 at each target holder 32 can be reduced, and the distribution of the gas 10 at each target 30 can be made more uniform. In addition, the distribution of the gas 10 at each target 30 can be made more uniform without providing a flow rate regulator 8 corresponding to each target holder 32 and precisely adjusting the flow rate of the gas 10 with each flow rate regulator 8.

[0107] [Embodiment 3] Hereinafter, another embodiment will be described in detail with reference to Figure 12. For the sake of clarity, components having the same function as those described in the above embodiment will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0108] Figure 12 is a schematic diagram of the magnetic field strength adjustment plate 61 according to Embodiment 1 and the magnetic field strength adjustment plate 610 according to Embodiment 3. Reference numeral 1201 in Figure 12 indicates the magnetic field strength adjustment plate 61, and reference numeral 1202 indicates the magnetic field strength adjustment plate 610. In Embodiment 1, each of the pair of magnetic field strength adjustment plates 61 is composed of a single plate. Therefore, the gap 61a formed between the magnetic field strength adjustment plates 61 has a uniform width (length L) in the longitudinal direction of the magnetic field strength adjustment plate 61. On the other hand, in Embodiment 3, each of the pair of magnetic field strength adjustment plates 610 (magnetic adjustment members) is divided into a plurality of sections in the longitudinal direction of the magnetic field strength adjustment plate 610.

[0109] Specifically, a pair of magnetic field strength adjustment plates 610 is a group of magnetic field plates composed of multiple pairs of magnetic field plates. As shown in Figure 12, in this embodiment, a pair of magnetic field strength adjustment plates 610 has three pairs of magnetic field plates 611, 612, and 613 in the longitudinal direction of the magnetic field strength adjustment plate 610. The width of the gap 61c formed by the first pair of magnetic field plates 611 is L1. The width of the gap 61d formed by the second pair of magnetic field plates 612 is L2. The width of the gap 61e formed by the third pair of magnetic field plates 613 is L3. The magnetic field plates 611, 612, and 613 are arranged in this order and are positioned on the upper surface 320 of the target holder 32.

[0110] Magnetic field plates 611, 612, and 613, like magnetic field strength adjustment plate 61, have elongated holes (not shown in Figure 12) that extend in the width direction of magnetic field strength adjustment plate 610. This allows the lengths L1, L2, and L3 of the gaps 61c, 61d, and 61e to be defined, respectively. That is, by adjusting the lengths L1, L2, and L3, the strength of the parallel magnetic field can be adjusted according to its position in the longitudinal direction of the target 30. This makes it easy to reduce unevenness in the strength of the parallel magnetic field in the longitudinal direction of the target 30, and is particularly effective when the target 30 is long.

[0111] Generally, in the longitudinal direction of the target 30, the closer to the end region of the target 30, the easier it is for the intensity of the parallel magnetic field to weaken. Therefore, for example, as shown in FIG. 12, the widths 61c and 61e of the gaps corresponding to both end regions of the target 30 are made narrower than the width of the gap 61d corresponding to the central region of the target 30 (L1≒L3<L2). Thereby, the magnetic field intensity in the gaps 61c and 61e can be made stronger than the magnetic field intensity of the gap 61d.

[0112] However, the widths 61c, 61d, and 61e may be adjusted so that the intensity of the parallel magnetic field is uniform over the entire surface of the target 30. For example, depending on the arrangement of the target 30, etc., the lengths L1, L2, and L3 may be different lengths.

[0113] Note that the magnetic field intensity adjustment plate 610 does not necessarily have to be divided into three sections of the magnetic field plates 611, 612, and 613, and may be divided into any number. Also, since each of the pair of magnetic field intensity adjustment plates 61 is curved, the length of the width 61a may be different at each position in the longitudinal direction of the magnetic field intensity adjustment plate 61. For example, the shape of the magnetic field intensity adjustment plate 61 may be defined such that the width 61a is maximum at the central portion in the longitudinal direction of the magnetic field intensity adjustment plate 61.

[0114] Also, in this embodiment, both of the magnetic field intensity adjustment plates 610 are divided into a plurality of sections, but it is not limited to this. For example, only one of the magnetic field intensity adjustment plates 610 may be divided into a plurality of sections. Even in this case, the width at each position in the longitudinal direction of the magnetic field intensity adjustment plate 610 can be adjusted individually.

[0115] 〔Modification Example 1〕 In Embodiment 1, air is inserted into the gap 61a as a material having a different permeability from the magnetic member. In this modified example, a material having a different permeability from air may be inserted into the gap 61a. This allows the magnetoresistance of the magnetic circuit to be adjusted, and as a result, the strength of the parallel magnetic field can be adjusted. For example, the permeability of air is (1.26 × 10⁻⁶). -6 Carbon steel has a permeability approximately 100 times that of μH / m (permeability: 1.26 × 10⁻⁶). -4 If a magnetic resistance of μH / m is inserted into the gap 61a, the magnetic resistance of the magnetic circuit becomes 1 / 100. Therefore, the strength of the parallel magnetic field can be increased. In addition, a material with a lower magnetic permeability than the magnetic component, such as a non-magnetic metal (e.g., aluminum) or engineering plastic (e.g., PEEK (PolyEtherethErKetone)), may be inserted into the gap 61a.

[0116] Furthermore, instead of the magnetic field strength adjustment plate 61 being composed of a pair of magnetic members, it may be composed of a single plate without air gaps (for example, a plate made of PEEK). In this case, the magnetic resistance of the magnetic circuit can be changed by replacing the magnetic field strength adjustment plate 61 with another magnetic field strength adjustment plate 61 having a different permeability than the magnetic field strength adjustment plate 61.

[0117] [Variation 2] In Embodiment 1, a pair of magnets 65 are provided inside the upper surface portion 3, but the position of the magnets 65 is not limited to this position. For example, instead of the magnetic field strength adjustment plate 61, a single magnet having a north pole and a south pole may be placed on the surface of the upper surface portion 3. Alternatively, a magnet with a north pole and a magnet with a south pole may be placed on the surface of the upper surface portion 3. In this case, the strength of the parallel magnetic field can be adjusted by changing the magnets.

[0118] [Variation 3] In the embodiments described above, ionization was performed by plasma 22 generated by antenna 20, but the invention is not limited to this. For example, without antenna 20, a parallel magnetic field with an intensity greater than that which generates a magnetron discharge may be formed by a magnetic circuit.

[0119] 〔summary〕 A sputtering apparatus according to one aspect of the present invention is a sputtering apparatus for depositing a film on a substrate by sputtering a target in a vacuum chamber, wherein the vacuum chamber comprises at least one holding portion for holding the target, the holding portion comprising a gas introduction portion for introducing gas into the holding portion, and a pair of openings provided in the holding portion at least a portion of the periphery of the target placement position when the target placement position is viewed from a vertically downward direction, and at positions opposite to the target placement position on either side of the target placement position, for releasing the gas introduced into the holding portion into the vacuum chamber.

[0120] With the above configuration, gas can be supplied to the entire surface of the target with a nearly uniform pressure from around the target. Therefore, unevenness in the gas distribution across the entire surface of the target can be reduced. Consequently, the possibility of variations in the thickness of the thin film deposited on the substrate can be reduced.

[0121] In a sputtering apparatus according to one aspect of the present invention, the shape of the target placement position when viewed from the vertically downward direction is rectangular, and the opening may be provided over the entire length of the opposing sides of the target placement position.

[0122] With the above configuration, gas can be supplied more uniformly across the entire surface of the target.

[0123] In a sputtering apparatus according to one aspect of the present invention, the opening may be provided over the entire length of the opposing long sides of the target placement position.

[0124] With the above configuration, the gas can be supplied more uniformly across the entire surface of the target.

[0125] In a sputtering apparatus according to one aspect of the present invention, the holding portion comprises a magnet and a magnetic member magnetized by the magnet, wherein the magnet and the magnetic member form a magnetic circuit that forms a magnetic field on the target placement position, and a gap is formed in a part of the magnetic circuit, and the part of the magnetic circuit with the gap may be provided outside the vacuum vessel.

[0126] With the above configuration, the magnetic resistance of the magnetic circuit can be adjusted without opening the vacuum container by using the air gap provided outside the vacuum container.

[0127] In a sputtering apparatus according to one aspect of the present invention, the holding portion may be equipped with an adjustment mechanism for adjusting the width of the gap.

[0128] With the above configuration, the magnetoresistance of the magnetic circuit can be adjusted by adjusting the width of the air gap.

[0129] In a sputtering apparatus according to one aspect of the present invention, the adjustment mechanism is provided on the upper surface of the holding portion as part of the magnetic member and comprises a pair of magnetic adjustment members that define the gap, and at least one of the pair of magnetic adjustment members has an elongated hole that extends in the width direction of the gap and passes through a fixing member that fixes the magnetic adjustment member to the holding portion as part of the magnetic member, and the position of the fixing member passing through the elongated hole may be variable.

[0130] According to the above configuration, the width of the gap can be changed by varying the penetration position of the elongated hole in the magnetic adjustment member.

[0131] In a sputtering apparatus according to one aspect of the present invention, the shape of the target placement position when viewed from the vertically downward direction is rectangular, the pair of magnetic adjustment members are provided extending in the longitudinal direction of the target placement position, at least one of the pair of magnetic adjustment members is divided into a plurality of sections along the longitudinal direction, and the width of the gap may be defined by defining the penetration position of the fixing member in the elongated hole for each of the plurality of sections.

[0132] According to the above configuration, different gap widths can be defined for each section. Therefore, the magnetoresistance of the magnetic circuit can be adjusted in the longitudinal direction of the target placement location.

[0133] In a sputtering apparatus according to one aspect of the present invention, a material having a different magnetic permeability than the magnetic member may be inserted into the gap.

[0134] According to the above configuration, the magnetic resistance of the magnetic circuit can be adjusted by inserting a material with a different magnetic permeability than the magnetic component into the air gap.

[0135] In one aspect of the present invention, a sputtering apparatus may be provided with a plurality of the holding parts.

[0136] With the above configuration, larger substrates can be sputtered using multiple targets.

[0137] In a sputtering apparatus according to one aspect of the present invention, the vacuum vessel is provided with a plurality of exhaust units for evacuating the inside of the vacuum vessel, and the exhaust units may be provided adjacent to the holding unit.

[0138] With the above configuration, the distribution of gas across the entire surface of the target can be made more uniform.

[0139] In a sputtering apparatus according to one aspect of the present invention, the holding portion is provided with a gas path that connects the gas introduction portion and the opening, the gas path comprises a main path that receives gas introduced from the gas introduction portion and a plurality of branch paths that communicate with the main path and introduce the gas in the main path to the opening, and the thickness of each of the plurality of branch paths may be smaller than the thickness of the main path.

[0140] According to the above configuration, the flow velocity of the gas released from the opening via the branched path can be increased, allowing the gas to be dispersed so that there are fewer areas of unevenness across the entire surface of the target.

[0141] [Additional Notes] The present invention is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0142] 1. Sputtering apparatus 2 Vacuum container 3, 320 top part 12 circuit boards 30 targets 32 Target holder (holding part) 51 Gas inlet 52 Gas routes (main routes) 53. Gas branching routes (gas routes, branching routes) 54 Gas outlet (opening) 55 Exhaust port (exhaust section) 61, 610 Magnetic field strength adjustment plate (magnetic adjustment component) 61a, 61c, 61d, 61e void 61b long hole 62 Magnetic path bolt (fixing member) 63. First magnetic plate (magnetic component) 65 Magnets 66. Second magnetic plate (magnetic component) 67 Third magnetic plate (magnetic component) 611, 612, 613 Magnetic field plate (magnetic adjustment member)

Claims

1. A sputtering apparatus that deposits a film onto a substrate by sputtering a target inside a vacuum chamber, The vacuum container comprises at least one holding portion for holding the target, The aforementioned retaining part is A gas introduction unit for introducing gas into the holding unit, When the target placement position in the holding portion is viewed from a vertically downward direction, a pair of openings are provided that extend over at least a portion of the area surrounding the target placement position and are located opposite the target placement position, and release the gas introduced into the holding portion into the vacuum container, It comprises a magnet and a magnetic member that is magnetized by the magnet, The magnet and the magnetic member form a magnetic circuit that creates a magnetic field on the target placement position. A gap is formed in a part of the aforementioned magnetic circuit. The part of the magnetic circuit in which the aforementioned void is formed is located outside the vacuum container. The holding portion further includes an adjustment mechanism for adjusting the width of the gap, The adjustment mechanism is provided on the upper surface of the holding portion as part of the magnetic member and comprises a pair of magnetic adjustment members that define the air gap. At least one of the pair of magnetic adjusting members has an elongated hole that extends in the width direction of the gap and penetrates a fixing member that secures the magnetic adjusting member to the holding portion as part of the magnetic member. A sputtering apparatus in which the penetration position of the fixing member in the elongated hole is variable.

2. The shape of the target placement position when viewed from the vertically downward direction is rectangular. The sputtering apparatus according to claim 1, wherein the opening is provided over the entire length of the opposite side of the target placement position.

3. The sputtering apparatus according to claim 1 or 2, wherein the opening is provided over the entire length of the opposing long side of the target placement position.

4. The shape of the target placement position when viewed from the vertically downward direction is rectangular. The pair of magnetic adjusting members are provided extending in the longitudinal direction of the target placement position, At least one of the pair of magnetic adjusting members is divided into a plurality of sections along the longitudinal direction. The sputtering apparatus according to any one of claims 1 to 3, wherein the width of the gap is defined by defining the penetration position of the fixing member in the elongated hole for each of the plurality of sections.

5. The sputtering apparatus according to any one of claims 1 to 4, wherein a material having a different magnetic permeability than the magnetic member is inserted into the gap.

6. The sputtering apparatus according to any one of claims 1 to 5, comprising a plurality of the aforementioned holding parts.

7. The vacuum vessel is equipped with at least one exhaust section for evacuating the inside of the vacuum vessel, The sputtering apparatus according to any one of claims 1 to 6, wherein the exhaust section is provided adjacent to the holding section.

8. The holding portion is provided with a gas path that connects the gas introduction portion and the opening, The aforementioned gas path is A main path for receiving the gas introduced from the aforementioned gas introduction section, The system includes a plurality of branch paths that communicate with the main path and introduce gas from the main path into the opening, The sputtering apparatus according to any one of claims 1 to 7, wherein the thickness of each of the plurality of branch paths is smaller than the thickness of the main path.

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