Semiconductor equipment

JP7871604B2Active Publication Date: 2026-06-09FUJI ELECTRIC CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
FUJI ELECTRIC CO LTD
Filing Date
2022-05-18
Publication Date
2026-06-09

AI Technical Summary

Benefits of technology

【0019】 本発明の第2の態様においては、半導体装置を提供する。上記半導体装置は、上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板を備えてよい。上記半導体装置は、前記ドリフト領域と前記半導体基板の前記上面との間に設けられ、前記ドリフト領域よりもドーピング濃度の高い第1導電型のエミッタ領域を備えてよい。上記いずれかの半導体装置は、前記エミッタ領域に接して設けられた第2導電型のベース領域を備えてよい。上記いずれかの半導体装置は、前記ドリフト領域と前記半導体基板の前記下面との間に設けられた第2導電型のコレクタ領域を備えてよい。上記いずれかの半導体装置において、前記コレクタ領域は、第1領域と、前記第1領域よりも前記ドリフト領域に対するキャリアの注入効率が低い第2領域とを含んでよい。上記いずれかの半導体装置において、上面視における前記コレクタ領域の単位面積に占める前記第1領域の面積をS1、前記第2領域の面積をS2とし、前記第1領域における前記コレクタ領域の前記ドーピング濃度をD1、前記第2領域における前記コレクタ領域の前記ドーピング濃度をD2とした場合に、下式で与えられる平均ドーピング濃度DCが1×1015/cm3以上、1×1018/cm3以下であってよい。 DC=(S1×D1+S2×D2)/(S1+S2)

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Abstract

To suppress switching loss in a semiconductor device.SOLUTION: A semiconductor device includes a drift region, and a second conductivity type collector region provided between the lower surface of a semiconductor substrate, the collector region includes a first region and a second region having a lower carrier injection efficiency into the drift region than the first region, and when the area of the first region in the unit area of the collector region in a top view is S1, the area of the second region is S2, the injection efficiency in the first region is η1, and the injection efficiency in the second region is η2, the average injection efficiency ηC given by the following formula is 0.1 or more and 0.4 or less, ηC=(S1×η1+S2×η2) / (S1+S2) is obtained.SELECTED DRAWING: Figure 3
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Claims

1. A semiconductor substrate having an upper surface and a lower surface, and provided with a drift region of a first conductivity type, An emitter region of a first conductivity type, which is provided in contact with the upper surface of the semiconductor substrate and has a doping concentration higher than that of the drift region, A second conductivity type base region is provided in contact with the emitter region, A second conductivity type collector region is provided between the drift region and the lower surface of the semiconductor substrate. Equipped with, The collector region includes a first region and a second region in which the carrier injection efficiency to the drift region is lower than that of the first region. The area of ​​the first region relative to the unit area of ​​the collector region in a top view is S. 1 The area of ​​the second region is S 2 The injection efficiency of the first region is set to η 1 η 2 In this case, the average injection efficiency η is given by the following equation. Ｃ The value is between 0.1 and 0.

4. or Ｃ =(S １ ×h １ +S ２ ×h ２ ) / (S １ +S ２ ) The collector region in the first region is thicker in the depth direction of the semiconductor substrate than the collector region in the second region. The impurity concentration of the second conductivity type in the second region is higher than the impurity concentration of the second conductivity type in the first region. Semiconductor equipment.

2. The distance between the two first regions in the top view is less than or equal to the diffusion length of minority carriers in the drift region. The semiconductor device according to claim 1.

3. A semiconductor substrate having an upper surface and a lower surface, and provided with a drift region of a first conductivity type, An emitter region of a first conductivity type, which is provided in contact with the upper surface of the semiconductor substrate and has a doping concentration higher than that of the drift region, A second conductivity type base region is provided in contact with the emitter region, A second conductivity type collector region is provided between the drift region and the lower surface of the semiconductor substrate, The active portion includes the emitter region and the base region, In a top view, a second conductivity type well region surrounds the active portion and is provided in contact with the upper surface of the semiconductor substrate, An edge termination structure is disposed between the well region and the edge of the semiconductor substrate. Equipped with, The collector region includes a first region and a second region in which the carrier injection efficiency to the drift region is lower than that of the first region. The area of ​​the first region relative to the unit area of ​​the collector region in a top view is S. 1 The area of ​​the second region is S 2 The injection efficiency of the first region is set to η 1 η 2 In this case, the average injection efficiency η is given by the following equation. Ｃ The value is between 0.1 and 0.

4. or Ｃ =(S １ ×h １ +S ２ ×h ２ ) / (S １ +S ２ ) The active portion is provided with both the first region and the second region. The edge termination structure is provided with the second region, and the first region is not provided. The second region of the edge termination structure is provided to extend to a position that overlaps with the emitter region of the active portion. Semiconductor equipment.

4. The second region is provided in a position overlapping with the well region, and the first region is not provided. The semiconductor device according to claim 3.

5. A semiconductor substrate having an upper surface and a lower surface, and provided with a drift region of a first conductivity type, An emitter region of a first conductivity type, which is provided in contact with the upper surface of the semiconductor substrate and has a doping concentration higher than that of the drift region, A second conductivity type base region is provided in contact with the emitter region, A second conductivity type collector region is provided between the drift region and the lower surface of the semiconductor substrate, A contact region is provided in contact with the upper surface of the semiconductor substrate, and has a doping concentration higher than that of the base region. Equipped with, The collector region includes a first region and a second region in which the carrier injection efficiency to the drift region is lower than that of the first region. The area of ​​the first region relative to the unit area of ​​the collector region in a top view is S. 1 The area of ​​the second region is S 2 The injection efficiency of the first region is set to η 1 η 2 In this case, the average injection efficiency η is given by the following equation. Ｃ The value is between 0.1 and 0.

4. or Ｃ =(S １ ×h １ +S ２ ×h ２ ) / (S １ +S ２ ) The contact area ratio of the first region is higher than the contact area ratio of the second region. The aforementioned contact area ratio is the ratio of the area of ​​the contact region exposed on the upper surface of the semiconductor substrate to a unit area. Semiconductor equipment.

6. The doping concentration in the collector region in the first region is higher than the doping concentration in the collector region in the second region. The semiconductor device according to any one of claims 3 to 5.

7. The doping concentration in the collector region in the first region is D １ , the doping concentration in the collector region in the second region is D ２ In this case, the average doping concentration D is given by the following formula. Ｃ is 1 x 10 １５ / cm ３ The above is 1 x 10 １８ / cm ３ The following is D Ｃ =(S １ ×D １ +S ２ ×D ２ ) / (S １ +S ２ ) The semiconductor device according to claim 6.

8. The doping concentration in the collector region in the second region is 1 × 10 １５ / cm ３ The above is 1 x 10 １７ / cm ３ The following is The semiconductor device according to claim 7.

9. The doping concentration in the collector region in the second region is higher than the doping concentration in the drift region. The semiconductor device according to claim 7.

10. Further comprising a buffer region formed between the second region and the drift region, wherein the doping concentration is higher than that of the drift region, The doping concentration in the collector region of the second region is higher than the donor concentration at the PN junction between the second region and the buffer region. The semiconductor device according to claim 7.

11. The doping concentration D in the collector region in the first region １ The average doping concentration D Ｃ Higher, The average doping concentration D Ｃ The doping concentration D in the collector region in the second region is ２ Higher, The ratio α of the area S2 of the second region to the area S1 of the first region is given by the following formula: a=S ２ / S １ The ratio β is the doping concentration D in the collector region in the first region. １ The following equation is given, which includes: β=(D １ / D Ｃ -1)+D ２ / (D Ｃ ―D ２ ) The aforementioned proportion α is smaller than the aforementioned proportion β. The semiconductor device according to claim 7.

12. The semiconductor substrate is provided from the upper surface to the drift region and further comprises a gate trench portion that is in contact with the emitter region and the base region, The first region is provided in a position that overlaps with the gate trench portion. The semiconductor device according to any one of claims 1 to 5.

13. A semiconductor substrate having an upper surface and a lower surface, and provided with a drift region of a first conductivity type, An emitter region of a first conductivity type, provided between the drift region and the upper surface of the semiconductor substrate, having a doping concentration higher than that of the drift region, A second conductivity type base region is provided in contact with the emitter region, A second conductivity type collector region is provided between the drift region and the lower surface of the semiconductor substrate, The active portion includes the emitter region and the base region, In a top view, a second conductivity type well region surrounds the active portion and is provided in contact with the upper surface of the semiconductor substrate, An edge termination structure is disposed between the well region and the edge of the semiconductor substrate. Equipped with, The collector region includes a first region and a second region in which the carrier injection efficiency to the drift region is lower than that of the first region. The area of ​​the first region relative to the unit area of ​​the collector region in a top view is S. 1 The area of ​​the second region is S 2 The doping concentration in the collector region in the first region is set to D １ , the doping concentration in the collector region in the second region is D ２ In this case, the average doping concentration D is given by the following formula. Ｃ The pressure is 1 × 10¹⁵ / cm³ or more and 1 × 10¹⁸ / cm³ or less. D Ｃ =(S １ ×D １ +S ２ ×D ２ ) / (S １ +S ２ ) The active portion is provided with both the first region and the second region. The edge termination structure is provided with the second region, and the first region is not provided. The second region of the edge termination structure is provided to extend to a position that overlaps with the emitter region of the active portion. Semiconductor equipment.

14. A semiconductor substrate having an upper surface and a lower surface, and provided with a drift region of a first conductivity type, An emitter region of a first conductivity type, provided between the drift region and the upper surface of the semiconductor substrate, having a doping concentration higher than that of the drift region, A second conductivity type base region is provided in contact with the emitter region, A second conductivity type collector region is provided between the drift region and the lower surface of the semiconductor substrate, A contact region is provided in contact with the upper surface of the semiconductor substrate, and has a doping concentration higher than that of the base region. Equipped with, The collector region includes a first region and a second region in which the carrier injection efficiency to the drift region is lower than that of the first region. The area of ​​the first region relative to the unit area of ​​the collector region in a top view is S. 1 The area of ​​the second region is S 2 The doping concentration in the collector region in the first region is set to D １ , the doping concentration in the collector region in the second region is D ２ In this case, the average doping concentration D is given by the following formula. Ｃ The pressure is 1 × 10¹⁵ / cm³ or more and 1 × 10¹⁸ / cm³ or less. D Ｃ =(S １ ×D １ +S ２ ×D ２ ) / (S １ +S ２ ) The contact area ratio of the first region is higher than the contact area ratio of the second region. The aforementioned contact area ratio is the ratio of the area of ​​the contact region exposed on the upper surface of the semiconductor substrate to a unit area. Semiconductor equipment.