Chalcogen compounds and semiconductor devices containing them
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2021-11-09
- Publication Date
- 2026-06-09
AI Technical Summary
【0051】 本発明により、オボニック閾値スイッチング特性を示すカルコゲン化合物が提供されうる。 本発明により、低いオフ電流値(漏れ電流値)を有しながら、優秀な耐久性特性(endurance)を有するスイッチング素子、半導体素子、及び/または半導体装置が提供されうる。そのような素子及び/または装置は、向上された集積度を具現することができ、電子装置の小型化に寄与することができる。
Smart Images
Figure 0007872087000002 
Figure 0007872087000003 
Figure 0007872087000004
Abstract
Claims
1. It includes a selective element layer containing a chalcogen compound, The chalcogen compound comprises the first element, the second element, the third element, selenium (Se), and tellurium (Te). The first element comprises at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca). The second element includes at least one of germanium (Ge) and tin (Sn), The semiconductor device comprises at least one of arsenic (As), antimony (Sb), and bismuth (Bi) as the third element.
2. The semiconductor device according to claim 1, wherein in the chalcogen compound, the elemental ratio of tellurium (Te) to selenium (Se) is greater than 0.0 and 0.5 or less.
3. The semiconductor device according to claim 1 or 2, wherein the elemental ratio of tellurium (Te) to selenium (Se) in the chalcogen compound is greater than 0.0 and 0.2 or less.
4. The semiconductor device according to any one of claims 1 to 3, wherein the elemental ratio of tellurium (Te) to selenium (Se) in the chalcogen compound is 0.07 or more and 0.20 or less.
5. The semiconductor device according to any one of claims 1 to 4, wherein the chalcogen compound contains 0.5 at% or more and 20.0 at% or less relative to the total elemental content.
6. The semiconductor device according to any one of claims 1 to 5, wherein the chalcogen compound contains 2.0 at% or more and 15.0 at% or less of the total elemental content.
7. In the chalcogen compound, the content of tellurium (Te) is 3 at% or more and 9 at% or less relative to the total elemental content. The semiconductor element according to any one of claims 1 to 6, wherein the ratio of tellurium (Te) content to selenium (Se) content is 0.06 or more and 0.19 or less.
8. The semiconductor device according to any one of claims 1 to 7, wherein the chalcogen compound contains selenium (Se) at a rate of more than 0.0 at% and 70.0 at% or less relative to the total elemental content.
9. The semiconductor device according to any one of claims 1 to 8, wherein the chalcogen compound contains 20.0 at% or more and 70.0 at% or less of the total elemental content.
10. The semiconductor device according to any one of claims 1 to 9, wherein the content of the first element in the chalcogen compound is 0.1 at% or more and 10.0 at% or less relative to the total element content.
11. The semiconductor device according to any one of claims 1 to 10, wherein the content of the second element in the chalcogen compound is 5.0 at% or more and 30.0 at% or less relative to the total element content.
12. The semiconductor device according to any one of claims 1 to 11, wherein the content of the third element in the chalcogen compound is 5.0 at% or more and 50.0 at% or less relative to the total element content.
13. The semiconductor device according to any one of claims 1 to 12, wherein the content of the third element in the chalcogen compound is 20.0 at% or more and 50.0 at% or less relative to the total element content.
14. The semiconductor device according to claim 1, comprising one or more of the compounds represented by the following chemical formulas: [Chemical formula 1] A ａ１ B ｂ１ C ｃ１ Se ｄ１ Te ｅ１ In chemical formula 1, A is the first element, B is the second element, and C is the third element, with 0.01 ≤ a1 ≤ 0.10, 0.05 ≤ b1 ≤ 0.30, 0.05 ≤ c1 ≤ 0.50, 0.20 ≤ d1 ≤ 0.70, and 0.0 < e1 ≤ 0.1; [Case 2] A ａ２ B ｂ２ C ｃ２ Se ｄ２ Te ｅ２ In chemical formula 2, A is the first element, B is the second element, and C is the third element, with 0.01 ≤ a² ≤ 0.10, 0.05 ≤ b² ≤ 0.30, 0.05 ≤ c² ≤ 0.50, 0.20 ≤ d² ≤ 0.70, and 0.05 ≤ e² ≤ 0.2; [Chemical 3] A ａ３ B ｂ３ C ｃ３ Se ｄ３ Te ｅ３ In chemical formula 3, A is the first element, B is the second element, and C is the third element, with 0.001 ≤ a³ ≤ 0.10, 0.05 ≤ b³ ≤ 0.30, 0.20 ≤ c³ ≤ 0.50, 0.20 ≤ d³ ≤ 0.70, and 0 < e³ ≤ 0.
2.
15. The semiconductor device according to any one of claims 1 to 13, wherein the chalcogen compound further comprises one or more elements selected from the group consisting of carbon (C), nitrogen (N), and oxygen (O).
16. The semiconductor element according to any one of claims 1 to 15, wherein the crystallization temperature of the chalcogen compound is 350°C or higher and 600°C or lower.
17. The semiconductor element according to any one of claims 1 to 16, wherein the sublimation temperature of the chalcogen compound is 250°C or higher and 400°C or lower.
18. Includes a variable resistor layer, The semiconductor element according to any one of claims 1 to 17, wherein the selection element layer is electrically connected to the variable resistor layer.
19. It further includes a first electrode layer, a second electrode layer, and a third electrode layer, The semiconductor element according to claim 18, wherein the selection element layer is disposed between the first electrode layer and the second electrode layer, and the variable resistor layer is disposed between the second electrode layer and the third electrode layer.
20. The semiconductor device according to claim 19, wherein the first electrode layer, the second electrode layer, and the third electrode layer each independently contain one or more of the following: carbon (C), titanium nitride (TiN), titanium silicon nitride (TiSiN), titanium carbonitride (TiCN), titanium silicon carbon nitride (TiCSiN), titanium aluminum nitride (TiAlN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), and tungsten nitride (WN).
21. The semiconductor device according to claim 18, wherein the variable resistance layer contains a material capable of reversibly undergoing a phase change between crystalline and amorphous states due to temperature changes.
22. The semiconductor device according to claim 21, wherein the variable resistor layer comprises a compound obtained by combining one or more of Te and Se with one or more of the group consisting of Ge, Sb, Bi, Pb, Sn, Ag, As, S, Si, In, Ti, Ga, P, B, O, and C.
23. The semiconductor element according to claim 22, wherein the variable resistor layer further comprises one or more from the group consisting of aluminum (Al), zinc (Zn), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), molybdenum (Mo), ruthenium (Ru), palladium (Pd), hafnium (Hf), tantalum (Ta), iridium (Ir), platinum (Pt), zirconium (Zr), thallium (Tl), and polonium (Po).
24. The semiconductor element according to any one of claims 21 to 23, further comprising a heating electrode layer disposed in contact with the variable resistance layer.
25. The semiconductor element according to claim 18, wherein the variable resistance layer includes a material whose electrical resistance can be reversibly changed by an externally applied voltage.
26. The semiconductor device according to claim 25, wherein the variable resistor layer contains an oxide of one or more metals selected from the group consisting of Ta, Zr, Ti, Hf, Mn, Y, Ni, Co, Zn, Nb, Cu, Fe, and Cr.
27. The semiconductor element according to claim 18, wherein the variable resistance layer includes a material whose polarization state can be reversibly changed by an externally applied voltage.
28. The variable resistance layer is made of niobium oxide, titanium oxide, nickel oxide, zirconium oxide, vanadium oxide, PCMO((Pr,Ca)MnO ３ The semiconductor device according to claim 27, comprising one or more perovskite compounds selected from the group consisting of strontium titanium oxide, barium strontium titanium oxide, strontium zirconium oxide, barium zirconium oxide, and barium strontium zirconium oxide.
29. The semiconductor element according to claim 18, wherein the variable resistance layer includes a material whose magnetization state can be reversibly changed by an externally applied voltage.
30. The semiconductor element according to claim 29, wherein the variable resistance layer includes two electrodes made of a magnetic material and a dielectric material interposed between the two electrodes.
31. The semiconductor element according to any one of claims 18 to 30, wherein the selection element layer has a threshold voltage of 2.5V or more and 5.0V or less.
32. The aforementioned selection element layer utilizes pulses with rise and fall times of 10 ns and a width of 100 ns, resulting in 5 x 10 ７ A semiconductor element according to any one of claims 18 to 31, which is capable of repeated on / off operation more than a certain number of times.
33. The aforementioned selection element layer is affected by the rate of change of the threshold voltage V ｔｈ A semiconductor element according to any one of claims 18 to 32, wherein the _drift is 50 mV / dec or less.
34. A plurality of first electrode lines formed on a substrate, parallel to the upper surface of the substrate and extending in a first direction, A plurality of second electrode lines are formed on the plurality of first electrode lines, are parallel to the upper surface of the substrate, and extend in a second direction different from the first direction, A semiconductor device comprising: a first semiconductor element, which includes a semiconductor element according to any one of claims 1 to 33, disposed at the intersection of the plurality of first electrode lines and the plurality of second electrode lines.
35. A plurality of third electrode lines are formed on the plurality of first electrode lines and second electrode lines and extend in the first direction, The semiconductor device according to claim 34, further comprising a second semiconductor element disposed at the intersection of the plurality of second electrode lines and the plurality of third electrode lines, the second semiconductor element including the semiconductor element described in any one of claims 1 to 33.
36. The semiconductor device according to claim 35, further comprising a circuit for driving the semiconductor element or for performing calculation processing.
37. A first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca), A second element comprising at least one of germanium (Ge) and tin (Sn), A third element comprising at least one of arsenic (As), antimony (Sb), and bismuth (Bi), It contains chalcogen elements, The chalcogenous element is a chalcogenous compound containing selenium (Se) and tellurium (Te), wherein the elemental ratio of tellurium (Te) to selenium (Se) is greater than 0.0 and less than or equal to 0.
5.
38. The chalcogen compound according to claim 37, wherein the elemental ratio of tellurium (Te) to selenium (Se) is greater than 0.0 and less than or equal to 0.
3.
39. The chalcogen compound according to claim 37 or 38, wherein the elemental ratio of tellurium (Te) to selenium (Se) is greater than 0.07 and less than or equal to 0.
20.
40. The chalcogen compound according to any one of claims 37 to 39, wherein the tellurium (Te) content is 2.0 at% or more and 15.0 at% or less relative to the total elemental content.
41. In the chalcogen compound, the content of tellurium (Te) is 3 at% or more and 9 at% or less relative to the total elemental content. The chalcogen compound according to any one of claims 37 to 40, wherein the ratio of tellurium (Te) content to selenium (Se) content is 0.06 or more and 0.19 or less.
42. The chalcogen compound according to any one of claims 37 to 41, wherein the selenium (Se) content is 20.0 at% or more and 70.0 at% or less relative to the total elemental content.
43. The chalcogen compound according to any one of claims 37 to 42, wherein the content of the first element is 0.1 at% or more and 10.0 at% or less relative to the total element content.
44. The chalcogen compound according to any one of claims 37 to 43, wherein the content of the second element is 5.0 at% or more and 30.0 at% or less relative to the total element content.
45. The chalcogen compound according to any one of claims 37 to 44, wherein the content of the third element is 20.0 at% or more and 50.0 at% or less relative to the total element content.
46. A chalcogen compound according to any one of claims 37 to 45, comprising one or more compounds represented by the following chemical formulas: [Chemical formula 1] A ａ１ B ｂ１ C ｃ１ Se ｄ１ Te ｅ１ In chemical formula 1, A is the first element, B is the second element, and C is the third element, with 0.01 ≤ a1 ≤ 0.10, 0.05 ≤ b1 ≤ 0.30, 0.05 ≤ c1 ≤ 0.50, 0.20 ≤ d1 ≤ 0.70, and 0.0 < e1 ≤ 0.1; [Case 2] A ａ２ B ｂ２ C ｃ２ Se ｄ２ Te ｅ２ In chemical formula 2, A is the first element, B is the second element, and C is the third element, with 0.01 ≤ a² ≤ 0.10, 0.05 ≤ b² ≤ 0.30, 0.05 ≤ c² ≤ 0.50, 0.20 ≤ d² ≤ 0.70, and 0.05 ≤ e² ≤ 0.2; [Chemical 3] A ａ３ B ｂ３ C ｃ３ Se ｄ３ Te ｅ３ In chemical formula 3, A is the first element, B is the second element, and C is the third element, with 0.001 ≤ a³ ≤ 0.10, 0.05 ≤ b³ ≤ 0.30, 0.20 ≤ c³ ≤ 0.50, 0.20 ≤ d³ ≤ 0.70, and 0 < e³ ≤ 0.2.