Compositions and methods for performing material removal operations

Abstract

In one embodiment, the polishing composition can include abrasive particles comprising zirconia, an oxidizing agent comprising hydroxylamine, and water. The polishing composition can have a high copper removal rate of at least 3500 Å / min, and a copper to silicon dioxide (Cu:SiO2) polishing selectivity of at least 2.5:1. In another embodiment, the combination product can include a first polishing composition and a second polishing composition, each of which can include abrasive particles comprising zirconia and an oxidizing agent comprising hydroxylamine, and the weight percent ratio of hydroxylamine in the first polishing composition to the second polishing composition can be at least 5:1.

Claims

1. A polishing composition comprising zirconia particles, an oxidizing agent containing hydroxylamine, and water, The abrasive composition contains less than 0.01% by weight of an aminosilane compound based on the total weight of the abrasive composition, and less than 0.001% by weight of a phosphonic acid based on the total weight of the abrasive composition. The amount of hydroxylamine is at least 0.5% by weight based on the total weight of the polishing composition. The zirconia particles constitute at least 98% by weight based on the total weight of the polishing particles. The pH of the abrasive composition is at least 2.5 and 5.8 or less. The polishing composition is designed to polish a copper substrate at an average material removal rate (MMR) of at least 3500 Å / min according to a copper polishing test, the copper polishing test being conducted with a downforce of 2.5 psi, a platen speed of 120 rpm, a carrier speed of 114 rpm, and a flow rate of 150 mL / min.

2. The polishing composition according to claim 1, wherein the polishing composition has a stability coefficient (SF) of at least 7.

3. The abrasive composition consists of copper to silicon dioxide (Cu:SiO ２ The polishing composition according to claim 1 or 2, wherein the polishing selectivity of the polishing agent is at least 2.5:

1.

4. The aforementioned Cu:SiO ２ The polishing composition according to claim 3, wherein the polishing selectivity is at least 3.5:

1.

5. The polishing composition according to claim 1 or 2, wherein the average (D50) particle size of the zirconia particles is at least 30 nm and 500 nm or less.

6. The polishing composition according to claim 1 or 2, wherein the amount of hydroxylamine is at least 0.5% by weight and 10% by weight or less based on the total weight of the polishing composition.

7. The polishing composition according to claim 1 or 2, wherein the amount of zirconia particles is at least 1% by weight and 10% by weight or less, based on the total weight of the polishing composition.

8. The polishing composition according to claim 1 or 2, wherein the copper-to-silicon nitride (Cu:SiN) selectivity of the polishing composition is at least 2.5:

1.

9. The polishing composition according to claim 1 or 2, wherein the oxidizing agent essentially consists of hydroxylamine.

10. The polishing composition according to claim 1 or 2, comprising, based on the total weight of the polishing composition, 0.5% to 3.0% by weight of hydroxylamine, 3% to 8% by weight of zirconia particles, and at least 90% by weight of water.

11. A combination product comprising a first abrasive composition and a second abrasive composition, The first polishing composition comprises the polishing composition described in claim 1, The second polishing composition comprises polishing particles containing zirconia and an oxidizing agent containing hydroxylamine, A combination product in which the weight percentage ratio of the amount of hydroxylamine in the first polishing composition to the amount of hydroxylamine in the second polishing composition is at least 5:

1.

12. The combination product according to claim 11, wherein the amount of hydroxylamine in the first polishing composition is at least 1.0% by weight and 10% by weight or less, based on the total weight of the first polishing composition, and the amount of hydroxylamine in the second polishing composition is at least 0.05% by weight and 0.8% by weight or less, based on the total weight of the second polishing composition.

13. The combination product according to claim 11 or 12, wherein the first polishing composition has a polishing selectivity of at least 2.5:1 copper to silicon nitride (Cu:SiN), and the second polishing composition has a polishing selectivity of 1:15 or less Cu:SiN.

14. A method for polishing a substrate, comprising polishing the substrate using the polishing composition described in claim 1 or 2, wherein the substrate is a patterned wafer, and the patterned wafer comprises copper pillars, a silicon nitride layer, and a silicon dioxide layer.

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