Vacuum processing apparatus and vacuum processing method

Abstract

To improve the yield of sputtering film deposition.SOLUTION: A vacuum processing apparatus includes a rotary target, a magnetic field generation mechanism, a substrate holder, an anti-adhesion plate, a plurality of first sensors and a plurality of second sensors. The magnetic field generation mechanism includes: a plurality of magnetic circuit parts facing a second main surface, arranged in the uniaxial direction and rotatable around the central axis; and a movement mechanism capable of changing a distance between each of the plurality of magnetic circuit parts and the rotary target. The plurality of first sensors measure the decrement of the thickness of the rotary target after discharging the sputtering particles from a first main surface. The plurality of second sensors measure a magnetic force leaking through the first main surface of the rotary target from any of the plurality of magnetic circuit parts when any of the plurality of magnetic circuit parts faces the anti-adhesion plate.SELECTED DRAWING: Figure 1

Description

【Technical Field】 【0001】 The present invention relates to a vacuum processing apparatus and a vacuum processing method. 【Background Art】 【0002】 Among sputtering film formation methods, there is a magnetron sputtering method in which a magnet is disposed on the back surface of a sputtering target to perform sputtering film formation. In magnetron sputtering, it is desired that the film quality (e.g., film thickness) of the sputtering film formed on the substrate be more uniform within the substrate surface. 【0003】 Under such circumstances, in order to obtain a sputtering film with uniform film quality, there is a technique in which a rotary target is used as the sputtering target and the orientation of the magnet disposed in the rotary target is periodically changed during sputtering film formation (see, for example, Patent Document 1). 【Prior Art Documents】 【Patent Documents】 【0004】 【Patent Document 1】 Japanese Patent No. 6385487 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0005】 However, in order to mass-produce sputtering films, when sputtering film formation is continuously performed for a long time, the sputtering target is partially dug out, and in addition, the magnet receives heat from the plasma, the support base supporting the magnet is deformed, and the film formation rate changes over time. As a result, the situation where the yield of sputtering film formation does not improve occurs. 【0006】 In view of the above circumstances, an object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method that improve the yield of sputtering film formation. [Means for solving the problem] 【0007】 To achieve the above objective, a vacuum processing apparatus according to one embodiment of the present invention comprises a cylindrical rotary target, a magnetic field generating mechanism, a substrate holder, an anti-adhesion plate, a plurality of first sensors, and a plurality of second sensors. The rotary target described above includes a first main surface for emitting sputtering particles and a second main surface opposite to the first main surface, has a central axis extending in a uniaxial direction, and rotates around the central axis. The magnetic field generating mechanism described above includes a plurality of magnetic circuit sections that are facing the second main surface, arranged in parallel in the uniaxial direction, and rotatable about the central axis, and a movement mechanism that changes the distance between each of the plurality of magnetic circuit sections and the rotary target. The substrate holder described above can support a substrate facing the first main surface on which the sputtering particles are deposited. The anti-deposition plate is positioned on the opposite side of the substrate holder via the rotary target. The above-mentioned plurality of first sensors are provided on the anti-deposition plate so as to face the first main surface of the rotary target, and measure the amount of decrease in the thickness of the rotary target after the sputtering particles are emitted from the first main surface. The multiple second sensors are provided on the protective plate so as to face the first main surface of the rotary target, and measure the magnetic force leaking from any of the multiple magnetic circuit sections through the first main surface of the rotary target when any of the multiple magnetic circuit sections faces the protective plate. 【0008】 Such a vacuum processing device improves the yield of sputtering film deposition. 【0009】 The vacuum apparatus described above may further include a control unit that controls the operation of the rotary target, the magnetic field generating mechanism, the first sensor, and the second sensor. The control unit described above includes: The relationship between the distance between any of the above-mentioned multiple first sensors and the first main surface, and the amount of reduction in the thickness of the rotary target that any of the above-mentioned multiple first sensors face, The relationship between the magnetic field strength detected by any of the above-mentioned multiple second sensors and the distance between any of the above-mentioned multiple second sensors and the magnetic circuit section. It may be stored there. The control unit may adjust the distance between any of the multiple second sensors and the magnetic circuit section to which any of the multiple second sensors faces, so that the magnetic field strength formed on the first main surface from any of the multiple magnetic circuit sections becomes a target value. 【0010】 Such a vacuum processing device improves the yield of sputtering film deposition. 【0011】 In the vacuum apparatus described above, multiple rotary targets may be arranged in parallel in a direction intersecting the uniaxial direction. 【0012】 Such a vacuum processing device improves the yield of sputtering film deposition. 【0013】 To achieve the above objective, in a vacuum processing method according to one embodiment of the present invention, A cylindrical rotary target having a central axis extending in a uniaxial direction and rotating around the central axis, including a first main surface that emits sputtering particles and a second main surface opposite to the first main surface, A magnetic field generating mechanism having a plurality of magnetic circuit sections facing the second main surface, arranged in parallel in the uniaxial direction, and rotatable about the central axis, and a moving mechanism that changes the distance between each of the plurality of magnetic circuit sections and the rotary target, A substrate holder capable of supporting a substrate on which the sputtering particles are deposited, facing the first main surface, The above substrate holder is located on the opposite side via the above rotary target, and A plurality of first sensors are provided on the deposition plate so as to face the first main surface of the rotary target, and measure the amount of decrease in the thickness of the rotary target after the sputtering particles are emitted from the first main surface. A plurality of second sensors are provided on the deposition plate so as to face the first main surface of the rotary target, and measure the magnetic force leaking from any one of the plurality of magnetic circuit parts through the first main surface of the rotary target when any one of the plurality of magnetic circuit parts faces the deposition plate. are prepared, and the sputtering particles are deposited on the substrate. 【0014】 According to such a vacuum treatment method, the yield of sputtering film formation is improved. 【0015】 In the vacuum treatment method, the relationship between the distance between any one of the plurality of first sensors and the first main surface, and the amount of decrease in the thickness of the rotary target that any one of the plurality of first sensors faces, the relationship between the magnetic field strength detected by any one of the plurality of second sensors, and the distance between any one of the plurality of second sensors and the magnetic circuit part that each of the plurality of second sensors faces may be obtained. The distance between any one of the plurality of second sensors and the magnetic circuit part that any one of the plurality of second sensors faces may be adjusted so that the magnetic field strength formed on the first main surface from any one of the plurality of magnetic circuit parts becomes the target value. 【0016】 According to such a vacuum treatment method, the yield of sputtering film formation is improved. 【0017】 In the vacuum treatment method, a plurality of rotary targets may be arranged in parallel in a direction intersecting the uniaxial direction, and the sputtering particles may be deposited on the substrate. 【0018】 According to such a vacuum treatment method, the yield of sputtering film formation is improved. 【Advantages of the Invention】 【0019】 As described above, according to the present invention, there are provided a vacuum processing apparatus and a vacuum processing method that improve the yield of sputtering film formation. 【Brief Description of the Drawings】 【0020】 [Figure 1] It is a schematic cross-sectional view showing an example of the vacuum processing apparatus of the present embodiment. [Figure 2] It is a schematic cross-sectional view showing the A1-A2 cross-section of FIG. 1. [Figure 3] It is a schematic cross-sectional view showing an example of sputtering film formation. [Figure 4] It is a schematic cross-sectional view showing an example of sputtering film formation. [Figure 5] It is a schematic cross-sectional view showing an example of sputtering film formation. [Figure 6] It is a schematic cross-sectional view showing the definition of the distance between members. [Figure 7] It is a flowchart that summarizes the operation procedures of the magnetic circuit section listed in Tables 1 to 3. [Figure 8] It is a schematic cross-sectional view showing another example of the vacuum processing apparatus of the present embodiment. 【Embodiments for Carrying Out the Invention】 【0021】 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced. Also, the same members or members having the same function may be given the same reference numerals, and the description may be omitted as appropriate after the description of such members. Further, the numerical values shown below are examples and are not limited to this example. 【0022】 FIG. 1 is a schematic cross-sectional view showing an example of the vacuum processing apparatus of the present embodiment. As the vacuum processing apparatus 1 illustrated in FIG. 1, a sputtering film forming apparatus is shown. 【0023】 The vacuum processing apparatus 1 comprises a cylindrical rotary target 20, a magnetic field generation mechanism 30, a substrate holder 91, a plurality of distance sensors 41, 42, 43, 44, 45 (first sensors), a plurality of magnetic sensors 51, 52, 53, 54, 55 (first sensors), and an anti-adhesion plate 60. The rotary target 20, magnetic field generation mechanism 30, substrate holder 91, the plurality of distance sensors 41-45, the plurality of magnetic sensors 51-55, and the anti-adhesion plate 60 are housed in a vacuum chamber (not shown) capable of maintaining a reduced pressure. The vacuum chamber is connected to an exhaust mechanism (not shown). Discharge gas such as Ar is supplied to the vacuum chamber from a gas supply mechanism (not shown). The vacuum processing apparatus 1 also includes a rotation mechanism (not shown) for rotating the rotary target 20 and the magnetic field generation mechanism 30. Furthermore, the vacuum processing apparatus 1 includes a control unit 70 that controls the operation of the rotary target 20, the magnetic field generating mechanism 30, distance sensors 41-45, magnetic sensors 51-55, the exhaust mechanism, the gas supply mechanism, and the rotation mechanism. 【0024】 The rotary target 20 is, for example, a cylindrical sputtering target. The rotary target 20 is supplied with a predetermined power (DC power, AC power, etc.) from a power source (not shown). The rotary target 20 has a cylindrical target material 21 and a cylindrical backing tube 22 that supports the target material 21. The rotary target 20 also has a central axis 20c that extends in a uniaxial direction (X-axis direction). The rotary target 20 rotates around the central axis 20c. The rotary target 20 includes a sputtering surface 201 (first main surface) that emits sputtering particles and a back surface 202 (second main surface) opposite to the sputtering surface 201. 【0025】 The magnetic field generating mechanism 30 is located inside the rotary target 20. The magnetic field generating mechanism 30 includes a plurality of magnetic circuit sections 311, 312, 313, 314, and 315, a plurality of moving mechanisms 331, 332, 333, 334, and 335, and a support plate 32. 【0026】 Each of the multiple magnetic circuit sections 311 to 315 faces the back surface 202 of the rotary target 20. Each of the multiple magnetic circuit sections 311 to 315 is arranged in parallel in a single axial direction (towards the central axis 20c). Each of the multiple magnetic circuit sections 311 to 315 includes, for example, a permanent magnet. As a result, a leakage magnetic field is formed on the sputtering surface 201 from each of the magnetic circuit sections 311 to 315. Each of the multiple magnetic circuit sections 311 to 315 is configured to be rotatable about the central axis 20c. 【0027】 Each of the moving mechanisms 331 to 335 supports one of the multiple magnetic circuit sections 311 to 315. For example, moving mechanism 331 supports magnetic circuit section 311. Moving mechanism 332 supports magnetic circuit section 312. Moving mechanism 333 supports magnetic circuit section 313. Moving mechanism 334 supports magnetic circuit section 314. Moving mechanism 335 supports magnetic circuit section 315. 【0028】 Each of the moving mechanisms 331 to 335 can change the distance between one of the multiple magnetic circuit sections 311 to 315 and the rotary target 20. For example, moving mechanism 331 can change the distance between magnetic circuit section 311 and the rotary target 20. Moving mechanism 332 can change the distance between magnetic circuit section 312 and the rotary target 20. Moving mechanism 333 can change the distance between magnetic circuit section 313 and the rotary target 20. Moving mechanism 334 can change the distance between magnetic circuit section 314 and the rotary target 20. Moving mechanism 335 can change the distance between magnetic circuit section 315 and the rotary target 20. 【0029】 The number of magnetic circuit sections is not limited to the number shown in the diagram and can be appropriately changed according to the length of the rotary target 20. The number of moving mechanisms is also changed according to the number of magnetic circuit sections. 【0030】 The support plate 32 supports each of the moving mechanisms 331 to 335. The support plate 32 supports the magnetic circuit section 311 via the moving mechanism 331. The support plate 32 supports the magnetic circuit section 312 via the moving mechanism 332. The support plate 32 supports the magnetic circuit section 313 via the moving mechanism 333. The support plate 32 supports the magnetic circuit section 314 via the moving mechanism 334. The support plate 32 supports the magnetic circuit section 315 via the moving mechanism 335. The support plate 32 also extends in a uniaxial direction. The support plate 32 can rotate around the central axis 20c. This allows each of the multiple magnetic circuit sections 311 to 315 to rotate around the central axis 20c. 【0031】 The protective plate 60 is positioned on the opposite side of the substrate holder 91 via the rotary target 20. The rotary target 20 is positioned between the protective plate 60 and the substrate holder 91. The protective plate 60 is provided with a plurality of distance sensors 41-45 and a plurality of magnetic sensors 51-55 facing the rotary target 20. The protective plate 60 is connected, for example, to ground potential. 【0032】 Each of the distance sensors 41 to 45 is provided on the protective plate 60 so as to face the sputtering surface 201 of the rotary target 20. Each of the distance sensors 41 to 45 is arranged in parallel in a uniaxial direction. For example, distance sensor 41 is provided on the protective plate 60 so as to be adjacent to magnetic sensor 51. Distance sensor 42 is provided on the protective plate 60 so as to be adjacent to magnetic sensor 52. Distance sensor 43 is provided on the protective plate 60 so as to be adjacent to magnetic sensor 53. Distance sensor 44 is provided on the protective plate 60 so as to be adjacent to magnetic sensor 54. Distance sensor 45 is provided on the protective plate 60 so as to be adjacent to magnetic sensor 55. The direction in which each sensor is adjacent may be uniaxial or in the direction of rotation of the rotary target 20. 【0033】 Each of the distance sensors 41 to 45 is equipped with an optical measuring means, such as a laser distance meter. Each of the distance sensors 41 to 45 measures the amount of thickness reduction of the rotary target 20 after sputtering particles have been emitted from the sputtering surface 201. 【0034】 Each of the multiple magnetic sensors 51 to 55 is mounted on the protective plate 60 so as to face the sputtering surface 201 of the rotary target 20. Each of the multiple magnetic sensors 51 to 55 is arranged in parallel in a single axis direction. Each of the multiple magnetic sensors 51 to 55 measures the magnetic field strength (magnetic force) leaking from one of the multiple magnetic circuit sections 311 to 315 through the sputtering surface 201 of the rotary target 20 when one of the multiple magnetic circuit sections 311 to 315 faces the protective plate 60 due to rotational movement around the central axis 20c. 【0035】 For example, when the magnetic circuit section 311 faces the protective plate 60, magnetic sensor 51 faces the magnetic circuit section 311 and measures the magnetic force leaking from the magnetic circuit section 311 through the sputtering surface 201 of the rotary target 20. When the magnetic circuit section 312 faces the protective plate 60, magnetic sensor 52 faces the magnetic circuit section 312 and measures the magnetic force leaking from the magnetic circuit section 312 through the sputtering surface 201 of the rotary target 20. When the magnetic circuit section 313 faces the protective plate 60, magnetic sensor 53 faces the magnetic circuit section 313 and measures the magnetic force leaking from the magnetic circuit section 313 through the sputtering surface 201 of the rotary target 20. When the magnetic circuit section 314 faces the protective plate 60, the magnetic sensor 54 faces the magnetic circuit section 314 and measures the magnetic force leaking from the magnetic circuit section 314 through the sputtering surface 201 of the rotary target 20. When the magnetic circuit section 315 faces the protective plate 60, the magnetic sensor 55 faces the magnetic circuit section 315 and measures the magnetic force leaking from the magnetic circuit section 315 through the sputtering surface 201 of the rotary target 20. 【0036】 The substrate holder 91 can support the substrate 90, which is the object to be processed under vacuum. The substrate 90 faces the sputtering surface 201. Sputtering particles emitted from the sputtering surface 201 are deposited on the substrate 90. The substrate holder 91 may be a fixed substrate holder in which the relative distance between the substrate holder 91 and the rotary target 20 does not change during sputtering deposition, or it may be a sliding substrate holder in which the relative distance between the substrate holder 91 and the rotary target 20 changes. For example, if the substrate holder 91 is a sliding substrate holder, the substrate 90 and the substrate holder 91 move in a direction perpendicular to the uniaxial direction (Y-axis direction) during sputtering deposition. 【0037】 The operation of the vacuum processing apparatus 1 and the vacuum processing method will be explained with reference to the A1-A2 cross-section in Figure 1. 【0038】 Figures 2(a) and 2(b) are schematic cross-sectional views showing the A1-A2 section of Figure 1. In the following, magnetic circuit section 311 is shown among magnetic circuit sections 311 to 315, and moving mechanism 331 is shown among moving mechanisms 331 to 335. The cross-sectional structure and operation shown using magnetic circuit section 311 and moving mechanism 331 also apply to magnetic circuit sections 312 to 315 other than magnetic circuit section 311, moving mechanisms 332 to 335 other than moving mechanism 331, distance sensors 42 to 45 other than distance sensor 41, and magnetic sensors 52 to 55 other than magnetic sensor 51. 【0039】 Figure 2(a) shows an example of the vacuum processing apparatus 1 performing sputtering film deposition. During sputtering film deposition, the magnetic circuit section 311 is directed towards the substrate 90 or the substrate holder 91. The rotary target 20 rotates at a predetermined angular velocity during sputtering film deposition. Figure 2(a) illustrates the state in which the magnetic circuit section 311 (for example, the central magnet 311a) is closest to the substrate 90. In this embodiment, the rotation angle θ of the magnetic circuit section 311 in this state is set to 0 degrees (reference value). Furthermore, clockwise rotation from 0 degrees (reference value) is considered a positive angle, and counterclockwise rotation is considered a negative angle. During sputtering film deposition, the rotation angle θ does not need to be set to 0 degrees; it may be shifted to the positive or negative side. An example of this will be described later. 【0040】 The magnetic circuit section 311 has a magnet 311a positioned in the center and magnets 311b and 311c positioned on either side of magnet 311a. The magnets 311a, 311b, and 311c are supported, for example, by a base material (yoke plate) 311p. The polarity of the magnetic circuit section 311 is configured such that the central magnet 311a is the south pole and the magnets 311b and 311c on either side are the north poles. With this configuration, the magnetic field that leaks from the magnetic circuit section 311 to the sputtering surface 201 and is formed on the sputtering surface 201 efficiently focuses electrons and charged particles. 【0041】 By rotating the magnetic circuit section 311 around the central axis 20c of the rotary target 20, plasma is concentrated near the sputtering surface 201 opposite the magnetic circuit section 311 during magnetron discharge. As a result, sputtering particles can be preferentially emitted from the sputtering surface 201 opposite the magnetic circuit section 311. Furthermore, the direction in which sputtering particles are emitted from the sputtering surface 201 can be changed depending on the rotation angle θ of the magnetic circuit section 311. 【0042】 The moving mechanism 331, supported by the support plate 32, has a sliding mechanism (telescopic rod) 331r. As the sliding mechanism 331r extends and retracts in the longitudinal direction of the sliding mechanism 331r, the magnetic circuit section 311 moves closer to or away from the rotary target 20. This allows the magnetic field formed on the sputtering surface 201 to be pushed towards the substrate 90 or pulled towards the central axis 20c. In other words, the magnetic field formed on the sputtering surface 201 can be strengthened or weakened by the extension and retraction of the sliding mechanism 331r. 【0043】 Figure 2(b) shows an example of the vacuum processing apparatus 1 when sputtering film deposition is stopped. When sputtering film deposition is stopped, the magnetic circuit section 311 rotates to the opposite side from the substrate 90 or substrate holder 91, so that the magnetic circuit section 311 (for example, the central magnet 311a) is positioned closest to the anti-deposition plate 60. At this time, the magnetic sensor 51 measures the magnetic field strength (for example, horizontal magnetic field strength (gauss)) leaking from the sputtering surface 201 opposite to the magnetic sensor 51. 【0044】 The magnetic field strength detected by the magnetic sensor 51 changes depending on the distance between the magnetic sensor 51 and the magnetic circuit section 311 facing the magnetic sensor 51. For example, the longer the distance between the magnetic sensor 51 and the magnetic circuit section 311 facing the magnetic sensor 51, the weaker the magnetic field strength detected by the magnetic sensor 51 becomes. 【0045】 For example, the control unit 70 stores the relationship between the magnetic field strength detected by any of the multiple magnetic sensors 51 to 55 and the distance between any of the multiple magnetic sensors 51 to 55 and the magnetic circuit section 311 to 315 that any of the multiple magnetic sensors 51 to 55 face. For example, the relationship between the magnetic field strength detected by any of the multiple magnetic sensors 51 to 55 and the distance between any of the magnetic sensors and the magnetic circuit section that any of the magnetic sensors face is stored. This correlation is determined in advance through experiments, simulations, etc. For example, the relationship between the magnetic field strength detected by any of the multiple magnetic sensors 51 to 55 and the distance between any of the magnetic sensors and the magnetic circuit section that any of the magnetic sensors face is given by the relationship (1) (magnetic field strength) = A × exp(-B × (distance)) (A and B are coefficients). In other words, the distance between the magnetic sensor 51 and the magnetic circuit section 311 can be calculated when the magnetic sensor 51 detects the magnetic field strength of the magnetic circuit section 311 that the magnetic sensor 51 faces. 【0046】 Furthermore, when sputtering deposition is stopped, the distance sensor 41 measures the distance (mm) between the distance sensor 41 and the sputtering surface 201 facing the distance sensor 41. The correlation between the distance (mm) between the distance sensor 41 and the sputtering surface 201 and the thickness (mm) of the target material 21 has been determined in advance through experiments, simulations, etc. This correlation is stored in the control unit 70. 【0047】 For example, if the initial thickness of the target material 21 (before sputtering deposition begins) is T0 (mm) and the initial distance between the distance sensor 41 and the sputtering surface 201 is D0 (mm), then if the target material 21 decreases by t (mm) due to sputtering deposition, the thickness of the target material 21 becomes T0-t (mm) (t≦T0), and the distance between the distance sensor 41 and the sputtering surface 201 becomes D0+t (mm). In other words, by measuring the distance between the distance sensor 41 and the sputtering surface 201, the thickness of the target material 21 after sputtering deposition begins, T0-t (mm), can be determined. 【0048】 The control unit 70 stores the relationship between the distance (D0+t(mm)) between any of the distance sensors 41-45 and the sputtering surface 201, and the amount of thickness reduction (-t(mm)) of the rotary target 20 (target material 21) that any of the distance sensors 41-45 faces. For example, the control unit 70 stores the relationship between the distance (D0+t(mm)) between any of the distance sensors 41-45 and the sputtering surface 201, and the amount of thickness reduction of the target material 21 that any of the distance sensors faces. The control unit 70 calculates the amount of reduction (-t(mm)) from the distance (D0+t(mm)), and then calculates the thickness of the target material 21 (T0-t(mm)). 【0049】 When measuring the magnetic field strength leaking from the sputtering surface 201 using the magnetic sensor 51, or when detecting the thickness of the target material 21 using the distance sensor 41, the rotary target 20 may be rotated or stopped. However, when detecting the average thickness of one full circumference of the outer edge of the target material 21 using the distance sensor 41, it is desirable to detect the thickness of the target material 21 while the rotary target 20 is rotating. 【0050】 Figures 3(a) to 5(b) are schematic cross-sectional views showing an example of sputtering film deposition. In Figures 3(a) to 5(b), the anti-deposition plate 60, distance sensor 41, and magnetic sensor 51 are omitted, as are the substrate 90 and substrate holder 91. 【0051】 First, before starting the sputtering process, the magnetic circuit section 311 is positioned facing the protective plate 60, as shown in Figure 3(a). The magnetic sensor 51 measures the magnetic field strength with the magnetic circuit section 311 facing the protective plate 60. The control unit 70 stores the relationship between the magnetic field strength detected by the magnetic sensor 51 and the distance between the magnetic sensor 51 and the magnetic circuit section 311 facing it. Therefore, the distance between the magnetic sensor 51 and the magnetic circuit section 311 before the start of sputtering can be determined from the magnetic field strength detected by the magnetic sensor 51. Note that in subsequent sputtering processes, the detection shown in Figure 3(a) may be omitted as appropriate. 【0052】 Next, as shown in Figure 3(b), a predetermined power is supplied to the rotary target 20 with the rotation angle θ of the magnetic circuit section 311 shifted from a reference value to a predetermined rotation angle, and sputtering deposition is started. Here, electrons and charged particles are focused into the magnetic field formed on the sputtering surface 201, so a plasma with a high plasma density is formed near the magnetic field formed on the sputtering surface 201. For this reason, the sputtering film formed on the substrate 90 may be damaged by the plasma. To avoid this, for example, the rotation angle θ is shifted clockwise (for example, +20 to +40 degrees) and sputtering deposition is performed. By shifting the rotation angle θ clockwise by a predetermined angle, the distance between the substrate 90 and the plasma increases compared to when the rotation angle θ is 0 degrees, making the sputtering film less susceptible to damage from the plasma. 【0053】 However, if sputtering deposition continues in this state, the support plate 32 will receive heat from the plasma. This may cause deformation of the support plate 32 and the substrate 311p. For example, the support plate 32 and the substrate 311p may warp or bend in parts. The deformation will be explained below using warping as an example. 【0054】 For example, if the support plate 32 shown in Figure 1 warps downwards due to the thermal history it receives from the plasma, both ends of the support plate 32 will move towards the anti-attachment plate 60 and the central part of the support plate 32 will move towards the substrate 90 compared to its state before being heated (for example, straight in one axis direction). As a result, for example, the magnetic circuit section 311 located near both ends of the support plate 32 will move away from the back surface 202 of the rotary target 20. This state is shown in Figure 4(a). 【0055】 As shown in Figure 4(a), if the magnetic circuit section 311 moves away from the back surface 202 of the rotary target 20, the magnetic field strength on the sputtering surface 201 decreases, and the amount of sputtering particles emitted from the sputtering surface 201 changes. This can lead to a phenomenon where the film deposition rate does not stabilize over time. 【0056】 To avoid this phenomenon, in this embodiment, the movement mechanism 331 corrects the distance fluctuation when the magnetic circuit section 311 moves away from or closer to the back surface 202 of the rotary target 20. This correction maintains a constant distance between the magnetic sensor 51 and the magnetic circuit section 311 during sputtering deposition. In other words, even if the magnetic circuit section 311 moves away from or closer to the back surface 202 of the rotary target 20, the movement mechanism 331 adjusts the magnetic field strength formed on the sputtering surface 201 to remain the same. The method is described below. 【0057】 For example, during sputtering deposition, the power supply to the rotary target 20 is periodically stopped, and the magnetic circuit section 311 is positioned facing the protective plate 60, as shown in Figure 4(b). After the magnetic circuit section 311 is positioned facing the protective plate 60, the support plate 32 is temporarily maintained in the warped state it was in during sputtering deposition. The magnetic sensor 51 measures the magnetic field strength when the magnetic circuit section 311 is facing the protective plate 60. Here, the control unit 70 stores the relationship between the magnetic field strength detected by the magnetic sensor 51 and the distance between the magnetic sensor 51 and the magnetic circuit section 311 it faces. Therefore, the distance between the magnetic sensor 51 and the magnetic circuit section 311 when the support plate 32 is warped can be determined from the magnetic field strength detected by the magnetic sensor 51. 【0058】 Subsequently, the sliding mechanism 331r of the moving mechanism 331 restores the distance between the magnetic sensor 51 and the magnetic circuit section 311 to the distance between the magnetic sensor 51 and the magnetic circuit section 311 before the support plate 32 warped. This state is shown in Figure 5(a). 【0059】 Next, as shown in Figure 5(b), the rotation angle θ of the magnetic circuit section 311 is set to the same rotation angle θ as shown in Figure 3(b). Then, power is supplied to the rotary target 20, and sputtering deposition begins. At this time, the magnetic field strength on the sputtering surface 201 is about the same as the state shown in Figure 3(b), so the amount of sputtering particles emitted from the sputtering surface 201 is about the same as the state shown in Figure 3(b). As a result, even if sputtering deposition is performed for a long time, the deposition rate of the sputtering film remains stable. 【0060】 Furthermore, if sputtering is performed for a long period of time, the support plate 32 may warp, and erosion may form on the target material 21 of the rotary target 20. In this case, the thickness of the target material 21 is calculated by the distance sensor 41 using the method described above. If the thickness of the target material 21 is calculated as (T0-t(mm)) by this measurement, it can be determined that the sputtering surface 201 has moved closer to the magnetic circuit section 311 by the amount of the decrease in the thickness of the rotary target 20, which is t(mm). In other words, the magnetic field leaking from the magnetic circuit section 311 to the sputtering surface 201 is stronger, and even if the magnetic field strength detected by the magnetic sensor 51 remains unchanged, the magnetic field strength on the sputtering surface 201 is stronger by the amount of the decrease, which is t(mm). 【0061】 Therefore, if the sputtering surface 201 is eroded by t (mm), the magnetic circuit section 311 can be moved t (mm) away from the magnetic sensor 51 (or rotary target 20) to set the magnetic field strength formed on the sputtering surface 201 to the same level as before the erosion occurred. 【0062】 In this way, the control unit 70 of the vacuum processing apparatus 1 uses a magnetic sensor as well as a distance sensor to adjust the distance between one of the multiple magnetic sensors 51 to 55 and the magnetic circuit section that one of the multiple magnetic sensors 51 to 55 faces, so that the magnetic field strength formed on the sputtering surface 201 from one of the multiple magnetic circuit sections 311 to 315 becomes a target value. For example, the control unit 70 uses a magnetic sensor and a distance sensor to adjust the distance between one of the multiple magnetic sensors and the magnetic circuit section that one of the multiple magnetic circuit sections 311 to 315 faces, so that the magnetic field strength formed on the sputtering surface 201 from one of the multiple magnetic circuit sections 311 to 315 becomes a target value. 【0063】 As a result, even if the support plate 32 warps due to thermal history or erosion forms on the target material 21 as a result of sputtering deposition over a long period of time, the magnetic field strength formed on the sputtering surface 201 can be set to the same level as before the support plate 32 warped due to thermal history or before erosion formed on the target material 21. As a result, a stable deposition rate can be obtained even when sputtering deposition is performed over a long period of time, and variations in the thickness of the sputtered film formed on the substrate 90 are less likely to occur. In other words, the yield of sputtering deposition is improved. 【0064】 Next, an example of the procedure for operating the magnetic circuit sections 311 to 315 will be described. This procedure is performed automatically by the control unit 70. Figure 6 shows a schematic cross-sectional view illustrating the definition of the distance between members. In Figure 6, magnetic circuit section 311 is shown among the magnetic circuit sections 311 to 315. The definition shown in Figure 6 also applies to magnetic circuit sections 312 to 315. 【0065】 For example, the distance between the magnetic circuit section 311 and the central axis 20c is defined by the distance L (mm) between the tip of the magnet 311a of the magnetic circuit section 311 and the central axis 20c. The distance between the magnetic sensor 51 and the magnetic circuit section 311 is defined by the distance M (mm) between the magnetic sensor 51 and the tip of the magnet 311a of the magnetic circuit section 311. The distance between the target member 21 and the magnetic circuit section 311 is defined by the distance N (mm) between the sputtering surface 201 of the target member 21 and the tip of the magnet 311a of the magnetic circuit section 311. The thickness of the target material 21 is defined by the thickness T between the sputtering surface 201 and the back surface 202 of the target material 21. The thickness T corresponds to (T0 - t (mm)) as described above. Also, the distance L + distance M is a fixed value because it corresponds to the distance between the magnetic sensor 51 and the central axis 20c. 【0066】 (Operation 1) 【0067】 [Table 1] 【0068】 The table shows the measured values ​​of each sensor, the initial settings between components at the location of each pair, and the calculated distances between components at the location of each pair (see Figure 1) for the pairs of distance sensor 41 and magnetic sensor 51, distance sensor 42 and magnetic sensor 52, distance sensor 43 and magnetic sensor 53, distance sensor 44 and magnetic sensor 54, and distance sensor 45 and magnetic sensor 55. Note that the distances between components and thicknesses in the initial state (before sputtering deposition begins) have been measured in advance. 【0069】 For example, the following describes how the magnetic circuit section 311 operates based on the detection of the distance sensor 41 and the magnetic sensor 51. 【0070】 For example, the distance L (mm) between the magnetic circuit section 311 and the central axis 20c is set to 48.5 (mm) as the initial setting value L0 (step 1a). 【0071】 Next, the distance M (mm) between the magnetic sensor 51 and the magnetic circuit unit 311 is set to 59.0 (mm) as the initial setting value M0 (step 2a). 【0072】 At this time, the target magnetic field strength at the position of the magnetic sensor 51 is set to 38 (Gauss) as the initial setting value B0 (step 3a). In other words, when the distance L (mm) and distance M (mm) are set to the above initial values, the magnetic circuit section 311 is used in which the magnetic field strength at the position of the magnetic sensor 51 is 38 (Gauss). 【0073】 Next, the magnetic field strength is measured by the magnetic sensor 51 (step 4a). The measured value B here is, of course, 38 (Gauss). 【0074】 Next, a calculated value M1 is calculated as the distance M (mm) between the magnetic sensor 51 and the magnetic circuit unit 311 from the measured magnetic field strength detected by the magnetic sensor 51 (step 5a). For example, from a magnetic field strength of 38 (Gauss), the calculated value M1 is calculated to be 59.0 (mm). This is calculated from the relationship formula (1) stored in the control unit 70, which is between the magnetic field strength detected by the magnetic sensor 51 and the distance between the magnetic sensor 51 and the magnetic circuit unit 311. 【0075】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the reduction in magnetic field strength due to the warping of the support plate 32 (step 6a). Here, since the calculated value M1 in step 5a matched the initial value M0, it can be determined that the support plate 32 is not warped and is straight. Therefore, there is no need to change the distance L, and the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is 0.0 (mm). 【0076】 On the other hand, in this embodiment, in addition to fluctuations in magnetic field strength, wear of the target material 21 is also taken into consideration. For example, the initial thickness (mm) of the target material 21 is set (step 7a). The initial setting value of the thickness (T0) is, for example, 20.0 (mm). 【0077】 Next, an initial value (N0) is set as the distance N (mm) between the target material 21 and the magnetic circuit section 311 (step 8a). The initial value N0 corresponds to the value obtained by subtracting the distance between the distance sensor 41 and the sputtering surface 201 from the initial value M0. The initial value N0 is 39.0 (mm). 【0078】 Next, the distance sensor 41 measures the thickness T (mm) of the target material 21 (step 9a). The measured thickness T1 of the target material 21 remains at the initial setting value T0, which is 20.0 (mm). 【0079】 Next, the distance N (mm) between the target material 21 and the magnetic circuit section 311 is calculated from the measured thickness T1 of the target material 21 (step 10a). Here, since the measured thickness T1 of the target material 21 remains at the initial setting T0, the calculated value N1 is 39.0 (mm). 【0080】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11a). Here, since the measured value T1 of the target material 21 in step 9a matched the initial value T0, there is no need to change the distance N (mm) between the target material 21 and the magnetic circuit section 311, and therefore there is no need to change the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c. Therefore, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is 0.0 (mm). 【0081】 Next, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is calculated (step 12a). Here, since both the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength, and the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in the thickness of the target material, are 0.0 (mm), the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is 0.0 (mm). 【0082】 Next, the operation of the magnetic circuit section 312 in response to detection by the distance sensor 42 and the magnetic sensor 52 will be explained below. 【0083】 For example, the distance L (mm) between the magnetic circuit section 312 and the central axis 20c is set to 47.5 (mm) as the initial setting value L0 (step 1a). 【0084】 Next, the distance M (mm) between the magnetic sensor 52 and the magnetic circuit unit 312 is set to 60.0 (mm) as the initial setting value M0 (step 2a). 【0085】 At this time, the target magnetic field strength at the position of the magnetic sensor 52 is set to 35 (Gauss) as the initial setting value B0 (step 3a). 【0086】 Next, the magnetic field strength is measured by the magnetic sensor 52 (step 4a). The measured value B here is, of course, 35 (Gauss). 【0087】 Next, from the measured magnetic field strength detected by the magnetic sensor 52, a calculated value M1 of 60.0 (mm) is obtained as the distance M (mm) between the magnetic sensor 52 and the magnetic circuit section 312. 【0088】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the reduction in magnetic field strength due to the warping of the support plate 32 (step 6a). Here, since the calculated value M1 in step 5a matched the initial value M0, it can be determined that the support plate 32 is not warped and is straight. Therefore, there is no need to change the distance L, and the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 0.0 (mm). 【0089】 Next, the initial thickness (mm) of the target material 21 is set (step 7a). The initial thickness value (T0) is, for example, 20.0 (mm). 【0090】 Next, an initial value (N0) is set as the distance N (mm) between the target material 21 and the magnetic circuit section 312 (step 8a). The initial value N0 is 40.0 (mm). 【0091】 Next, the distance sensor 42 measures the thickness T (mm) of the target material 21 (step 9a). The measured thickness T1 of the target material 21 remains at the initial setting value T0, which is 20.0 (mm). 【0092】 Next, the distance N (mm) between the target material 21 and the magnetic circuit section 312 is calculated from the measured thickness T1 of the target material 21 (step 10a). Here, since the measured thickness T1 of the target material 21 remains at the initial setting T0, the calculated value N1 is 40.0 (mm). 【0093】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11a). Here, since the measured value T1 of the target material 21 in step 9a matched the initial value T0, there is no need to change the distance N (mm) between the target material 21 and the magnetic circuit section 312, and therefore there is no need to change the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c. Therefore, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 0.0 (mm). 【0094】 Next, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is calculated (step 12a). Here, since both the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength, and the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in the thickness of the target material, are 0.0 (mm), the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is 0.0 (mm). 【0095】 Thus, if the support plate 32 is not warped due to thermal history and there is no wear on the target material 21, sputtering deposition is performed without changing the distance between the magnetic circuit and the central axis from the initial state. 【0096】 (Operation 2) 【0097】 Next, Table 2 will explain how the magnetic circuit section 311 operates when the support plate 32 warps due to thermal history after sputtering film deposition has started, for example, based on detection by the distance sensor 41 and the magnetic sensor 51. 【0098】 [Table 2] 【0099】 First, steps 1b through 3b perform the same processing as steps 1a through 3a. 【0100】 Next, the magnetic field strength is measured by the magnetic sensor 51 (step 4b). Here, suppose the measured value B is 20 (Gauss) instead of the initial value of 38 (Gauss). 【0101】 Next, from the measured magnetic field strength detected by the magnetic sensor 51, the distance M (mm) between the magnetic sensor 51 and the magnetic circuit section 311 is calculated using relational equation (1) (step 5b). For example, from a magnetic field strength of 20 (Gauss), the calculated value M1 is 67.1 (mm). 【0102】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength due to the warping of the support plate 32, etc. (step 6b). Here, since the calculated value M1 does not match the initial setting value M0, it can be determined that the support plate 32 is warped. Therefore, the amount of change in distance L is 8.1 (mm), which is the difference between the calculated value M1 and the initial setting value M0. In other words, even if the distance L between the magnetic circuit section 311 and the central axis 20c is further than the initial state, by moving the 8.1 (mm) distance back in the direction from the central axis 20c toward the rotary target 20, the magnetic field strength formed on the sputtering surface 201 by the magnetic circuit section 311 becomes about the same as the initial state. 【0103】 Next, wear on the target material 21 is taken into consideration. Here, it is assumed that no wear occurs on the target material 21, so the process in steps 7b to 11b is the same as the process in steps 7a to 11a. 【0104】 Next, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is calculated (step 12b). Here, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength, is 8.1 (mm), and the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in the thickness of the target material, is 0.0 (mm). Therefore, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is 8.1 (mm). 【0105】 Next, the operation of the magnetic circuit section 312 in response to detection by the distance sensor 42 and the magnetic sensor 52 will be explained below. 【0106】 First, steps 1b through 3b perform the same processing as steps 1a through 3a. 【0107】 Next, the magnetic field strength is measured by the magnetic sensor 52 (step 4b). Here, suppose the measured value B is 20 (Gauss) instead of the initial value of 35 (Gauss). 【0108】 Next, from the measured magnetic field strength detected by the magnetic sensor 52, the distance M (mm) between the magnetic sensor 52 and the magnetic circuit section 312 is calculated using relational equation (1) (step 5b). For example, from a magnetic field strength of 20 (Gauss), the calculated value M1 is 67.1 (mm). 【0109】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength due to the warping of the support plate 32, etc. (step 6b). The amount of change in distance L is such that the calculated value M1 is 7.1 (mm), which is the difference from the initial setting value M0. In other words, by moving the distance of 7.1 (mm) back in the direction from the central axis 20c toward the rotary target 20, the magnetic field strength formed on the sputtering surface 201 by the magnetic circuit section 312 becomes approximately the same as the initial state. 【0110】 Next, wear on the target material 21 is taken into consideration. Here, it is assumed that no wear occurs on the target material 21, so the process in steps 7b to 11b is the same as the process in steps 7a to 11a. 【0111】 Next, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is calculated (step 12b). Here, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength, is 8.1 (mm), and the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in the thickness of the target material, is 0.0 (mm). Therefore, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is 7.1 (mm). 【0112】 In this manner, if the support plate 32 warps due to thermal history, the distance between the magnetic circuit section and the central axis is returned to a predetermined distance from the initial state in the direction toward the rotary target 20 from the central axis 20c, and sputtering film deposition is performed. 【0113】 (Operation 3) 【0114】 Next, Table 3 will explain how the magnetic circuit section 311 operates when, for example, the distance sensor 41 and the magnetic sensor 51 detect warping of the support plate 32 due to thermal history after sputtering film deposition has started, and the thickness of the target material 21 decreases. 【0115】 [Table 3] 【0116】 First, steps 1c to 6c perform the same processing as steps 1b to 6b. That is, a process is performed to return a distance of 8.1 mm, where L is the distance between the magnetic circuit section 311 and the central axis 20c, in the direction from the central axis 20c toward the rotary target 20. 【0117】 Next, the wear of the target material 21 is taken into consideration. First, steps 7c to 8c are performed in the same way as steps 7a to 8a. 【0118】 Next, the thickness T (mm) of the target material 21 is measured by the distance sensor 41 (step 9c). Here, the measured thickness T1 of the target material 21 is assumed to be 18.0 (mm). In other words, it is assumed that the thickness of the target material 21 has decreased by 2.0 (mm) due to sputtering deposition. 【0119】 Next, the distance N (mm) between the target material 21 and the magnetic circuit section 311 is calculated from the measured thickness T1 of the target material 21 (step 10c). Here, the calculated value N1 is 37.0 (mm). 【0120】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11c). Here, in step 9c, the measured value T1 of the target material 21 has decreased by 2.0 (mm) from the initial value T0. Therefore, the sputtering surface 201 has moved closer to the magnetic circuit section 311 by this 2.0 (mm), so it is necessary to change the distance N (mm) between the target material 21 and the magnetic circuit section 311. Consequently, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is -2.0 (mm). In other words, the distance L between the magnetic circuit section 311 and the central axis 20c is returned by a distance of 2.0 (mm) in the opposite direction from the central axis 20c toward the rotary target 20. 【0121】 Next, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is calculated (step 12a). Here, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength, is 8.1 (mm), and the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in the thickness of the target material, is -2.0 (mm). Therefore, the change in the distance L between the magnetic circuit section 311 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is 6.1 (mm). 【0122】 Next, the operation of the magnetic circuit section 312 in response to detection by the distance sensor 42 and the magnetic sensor 52 will be explained below. 【0123】 First, steps 1c through 6c perform the same processing as steps 1b through 6b. 【0124】 Next, the wear of the target material 21 is taken into consideration. First, steps 7c to 8c are performed in the same way as steps 7a to 8a. 【0125】 Next, the thickness T (mm) of the target material 21 is measured by the distance sensor 42 (step 9c). Here, the measured thickness T1 of the target material 21 is assumed to be 19.0 (mm). In other words, it is assumed that the thickness of the target material 21 has decreased by 1.0 (mm) due to sputtering deposition. 【0126】 Next, the distance N (mm) between the target material 21 and the magnetic circuit section 312 is calculated from the measured thickness T1 of the target material 21 (step 10c). Here, the calculated value N1 is 39.0 (mm). 【0127】 Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11c). Here, in step 9c, the measured value T1 of the target material 21 has decreased by 1.0 (mm) from the initial value T0. Therefore, the sputtering surface 201 has moved closer to the magnetic circuit section 312 by this 1.0 (mm), so it is necessary to change the distance N (mm) between the target material 21 and the magnetic circuit section 312. Consequently, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is -1.0 (mm). In other words, the distance L between the magnetic circuit section 312 and the central axis 20c is returned by a distance of 1.0 (mm) in the opposite direction from the central axis 20c toward the rotary target 20. 【0128】 Next, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is calculated (step 12a). Here, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength, is 7.1 (mm), and the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in the thickness of the target material, is -1.0 (mm). Therefore, the change in the distance L between the magnetic circuit section 312 and the central axis 20c (mm), taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21, is 6.1 (mm). 【0129】 Furthermore, how the magnetic circuit unit 313 operates based on the detection of distance sensor 43 and magnetic sensor 53, or how the magnetic circuit unit 314 operates based on the detection of distance sensor 44 and magnetic sensor 54, is performed in the same manner as how the magnetic circuit unit 312 operates based on the detection of distance sensor 42 and magnetic sensor 52. Also, how the magnetic circuit unit 315 operates based on the detection of distance sensor 45 and magnetic sensor 55 is performed in the same manner as how the magnetic circuit unit 311 operates based on the detection of distance sensor 41 and magnetic sensor 51. 【0130】 Furthermore, the magnetic circuit section 311 corresponding to the positions of the distance sensor 41 and the magnetic sensor 51, and the magnetic circuit section 315 corresponding to the positions of the distance sensor 45 and the magnetic sensor 55, are positioned closer to the rotary target 20 than the other magnetic circuit sections. This is because no magnetic circuit sections are positioned on either side of the magnetic circuit sections 311 and 315. By positioning the magnetic circuit sections 311 and 315 closer to the rotary target 20 than the other magnetic circuit sections, the magnetic field strength formed on the sputtering surface 201 becomes more uniform. As a result, the film thickness distribution in one axial direction of the rotary target 20 becomes more uniform. 【0131】 Figure 7 is a flowchart that comprehensively shows the operating procedures of the magnetic circuit section listed in Tables 1 to 3. 【0132】 First, the magnetic field strength is measured by one of the magnetic sensors 51 to 55 (S100). Next, it is determined whether or not a change in the magnetic field strength measured by one of the magnetic sensors 51 to 55 is necessary (S200). If it is determined that a change is necessary, the amount of change in the distance between one of the magnetic circuit sections 311 to 315 and the central axis 20c, taking into account the fluctuation in magnetic field strength, is calculated (S300). If it is determined in S200 that no change is necessary, the process proceeds to S400. 【0133】 Next, the thickness of the target material 21 is measured by one of the distance sensors 41 to 45 (S400). Then, it is determined whether or not it is necessary to change the distance between the target material 21 and one of the magnetic circuit units 311 to 315 (S500). If it is determined that it is necessary, the amount of change in the distance between one of the magnetic circuit units 311 to 315 and the central axis 20c is calculated, taking into account the variation in the thickness of the target material 21 (S600). If it is determined in S500 that it is not necessary, the distance between one of the magnetic circuit units 311 to 315 and the central axis 20c is not changed, and the process ends. 【0134】 Next, based on the respective changes taken into account the fluctuations in magnetic field strength and the fluctuations in target material thickness, the distance between one of the magnetic circuit sections 311 to 315 and the central axis 20c is changed (S700), and the process ends. 【0135】 For example, if sputtering deposition is started and the film thickness distribution of the sputtered film formed on the substrate 90 in one axis direction (X-axis direction) temporarily drops to 6.8%, it has been found that by controlling the magnetic circuit shown in Figure 7 above, if the target value of the film thickness distribution in one axis direction is set to 5% or less, it can recover to, for example, 4.6% or less. The film thickness distribution is defined as ((maximum film thickness - minimum film thickness) / (maximum film thickness + minimum film thickness)) × 100 (%). 【0136】 Figure 8 is a schematic cross-sectional view showing another example of the vacuum processing apparatus of this embodiment. 【0137】 In the vacuum processing apparatus 2, multiple rotary targets 20 are used to perform sputtering (magnetron sputtering) on ​​the substrate 90. The number of rotary targets is appropriately changed according to the size of the substrate 90. The multiple rotary targets 20 are housed in a vacuum chamber 10 that can maintain a reduced pressure. 【0138】 The vacuum chamber 10 is connected to an exhaust mechanism (not shown). Discharge gas such as Ar is supplied to the vacuum chamber 10 from a gas supply mechanism (not shown). The vacuum processing apparatus 2 also includes a rotation mechanism (not shown) that rotates a plurality of rotary targets 20 and their respective magnetic field generating mechanisms 30. The vacuum processing apparatus 2 also includes a control unit 70 that controls the operation of the rotary targets 20, the magnetic field generating mechanisms 30, a sensor group S1 including distance sensors 41-45 and magnetic sensors 51-55, the exhaust mechanism, the gas supply mechanism, and the rotation mechanism. The distance sensors 41-45 and the magnetic sensors 51-55 included in the sensor group S1 are arranged side by side in the direction of the central axis 20c. 【0139】 Multiple rotary targets 20 are arranged so that their central axes 20c are parallel to each other and parallel to the substrate 90. For example, multiple rotary targets 20 are arranged at equal intervals so that their sputtering surfaces 201 face each other in a direction intersecting the direction of the central axis 20c (uniaxial direction). The direction in which the multiple rotary targets 20 are arranged corresponds to the longitudinal direction of the substrate 90. In Figure 8, this direction is the Y-axis direction. If necessary, the direction in which the multiple rotary targets 20 are arranged may be the short-side direction of the substrate 90. 【0140】 The potential of the substrate holder 91 is, for example, the floating potential, the ground potential, etc. The sputtering surfaces 201 of each of the multiple rotary targets 20 face the substrate 90. 【0141】 Furthermore, in the Y-axis direction, the pair of rotary targets 20 located at both ends are positioned so as to extend beyond the substrate 90. For example, multiple rotary targets 20 are arranged such that at least a portion of each pair of rotary targets 20 and the substrate 90 overlap in the Z-axis direction (a direction perpendicular to the X-axis and Y-axis directions). 【0142】 In the Y-axis direction, the pitches of the multiple rotary targets 20 are set to be approximately equal. Furthermore, the relative distance between the multiple rotary targets 20 and the substrate 90 during sputtering deposition may be a fixed distance, or it may be varied in the Y-axis direction. 【0143】 Discharge power is applied to each of the multiple rotary targets 20, and the magnetic circuit sections 311 to 315 of each of the multiple rotary targets 20 rotate around the central axis 20c until the rotation angle θ is fixed at a predetermined rotation angle, after which a sputtering film is deposited on the substrate 90. 【0144】 Each of the multiple rotary targets 20 is supplied with the same power, for example, to ensure that the wear on each rotary target is approximately equal. The supplied power may be DC power or AC power such as RF band or VHF band. Each of the multiple rotary targets 20 rotates either clockwise or counterclockwise. 【0145】 Sputtering deposition is performed at least once when the rotation angle θ of the magnetic circuit sections 311 to 315 is on the positive side (e.g., +20 to +40 degrees) and at least once when the rotation angle θ of the magnetic circuit sections 311 to 315 is on the negative side (e.g., -20 to -40 degrees). By performing this process, damage to the sputtered film is suppressed, and the film thickness unevenness in the Y-axis direction is compensated for by multiple sputtering depositions compared to sputtering deposition with only one pass, resulting in a better film thickness distribution in the Y-axis direction. 【0146】 Furthermore, in this embodiment, the method described above improves the film thickness distribution in the X-axis direction (uniaxial direction). As a result, in this embodiment, the film thickness distribution across the entire substrate 90 is improved. 【0147】 In addition, this embodiment provides not only vacuum processing apparatuses 1 and 2, but also processing methods using vacuum processing apparatuses 1 and 2. For example, in the vacuum processing method, a rotary target 20, a magnetic field generating mechanism 30, a substrate holder 91, an anti-deposition plate 60, a plurality of distance sensors 41 to 45, and a plurality of magnetic sensors 51 to 55 are prepared, and sputtering particles are deposited on the substrate 90. 【0148】 Here, the relationship between the distance between any of the multiple distance sensors 41-45 and the sputtering surface 201, and the amount of thickness reduction of the rotary target 20 that any of the multiple distance sensors 41-45 faces, is acquired in advance. Furthermore, the relationship between the magnetic field strength detected by any of the multiple magnetic sensors 51-55 and the distance between any of the multiple magnetic sensors 51-55 and the magnetic circuit sections 311-315 that each of the multiple magnetic sensors 51-55 faces, is acquired in advance. 【0149】 Next, the distance between one of the magnetic sensors 51 to 55 and the magnetic circuit section 311 to 315 that each of the magnetic sensors 51 to 55 faces is adjusted so that the magnetic field strength formed on the sputtering surface 201 from any of the magnetic circuit sections 311 to 315 becomes the target value. 【0150】 Alternatively, multiple rotary targets 20 may be arranged side by side in a direction intersecting the uniaxial direction to deposit sputtering particles onto the substrate 90. 【0151】 Although embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to the embodiments described above and can be modified in various ways. Each embodiment is not necessarily an independent form and can be combined to the extent that it is technically possible. [Explanation of Symbols] 【0152】 1, 2... Vacuum processing equipment 10...Vacuum chamber 20... Rotary Target 20c…Central axis 21…Target material 22... Backing tube 30…Magnetic field generation mechanism 32...Support plate 41, 42, 43, 44, 45… Distance sensors 51, 52, 53, 54, 55... Magnetic sensors 60…Adhesion prevention plate 70... Control Unit 90... Circuit board 91... Circuit board holder 201...Sputtering surface 202…Back side 311a, 311b, 311c... Magnets 311p…Base material 331r...Slide mechanism 311, 312, 313, 314, 315... Magnetic circuit section 331, 332, 333, 334, 335...Movement mechanism

Claims

[Claim 1] A cylindrical rotary target having a central axis extending in a uniaxial direction and rotating around the central axis, including a first main surface for emitting sputtering particles and a second main surface opposite to the first main surface, A magnetic field generating mechanism having a plurality of magnetic circuit sections facing the second main surface, arranged in parallel in the uniaxial direction, and rotatable about the central axis, and a moving mechanism that changes the distance between each of the plurality of magnetic circuit sections and the rotary target, A substrate holder capable of supporting a substrate on which the sputtering particles are deposited, facing the first main surface, The substrate holder is located on the opposite side via the rotary target, and the protective plate is positioned on the opposite side of it. The protective plate is provided with a plurality of first sensors that are positioned opposite the first main surface of the rotary target and measure the amount of reduction in the thickness of the rotary target after the sputtering particles have been released from the first main surface. The protective plate is provided with a plurality of second sensors that are positioned to face the first main surface of the rotary target, and measure the magnetic force leaking from any of the plurality of magnetic circuit sections through the first main surface of the rotary target when any of the plurality of magnetic circuit sections faces the protective plate, A control unit that controls the operation of the rotary target, the magnetic field generating mechanism, the first sensor, and the second sensor, respectively. It is equipped with, The control unit includes: The relationship between the distance between any of the plurality of first sensors and the first main surface and the amount of reduction in the thickness of the rotary target facing any of the plurality of first sensors, The relationship between the magnetic field strength detected by any of the plurality of second sensors and the distance between any of the plurality of second sensors and the magnetic circuit section. Stored, The control unit adjusts the distance between one of the multiple second sensors and the magnetic circuit portion that one of the multiple second sensors faces, so that the magnetic field strength formed on the first main surface from any of the multiple magnetic circuit portions becomes a target value. Vacuum processing equipment. [Claim 2] A vacuum apparatus according to claim 1, Multiple rotary targets are arranged side by side in a direction intersecting the uniaxial direction. Vacuum processing equipment. [Claim 3] A cylindrical rotary target having a central axis extending in a uniaxial direction and rotating around the central axis, including a first main surface for emitting sputtering particles and a second main surface opposite to the first main surface, A magnetic field generating mechanism having a plurality of magnetic circuit sections facing the second main surface, arranged in parallel in the uniaxial direction, and rotatable about the central axis, and a moving mechanism that changes the distance between each of the plurality of magnetic circuit sections and the rotary target, A substrate holder capable of supporting a substrate on which the sputtering particles are deposited, facing the first main surface, The substrate holder is located on the opposite side via the rotary target, and the protective plate is positioned on the opposite side of it. The protective plate is provided with a plurality of first sensors that are positioned opposite the first main surface of the rotary target and measure the amount of reduction in the thickness of the rotary target after the sputtering particles have been released from the first main surface. The protective plate is provided with a plurality of second sensors that are positioned to face the first main surface of the rotary target, and measure the magnetic force leaking from any of the plurality of magnetic circuit sections through the first main surface of the rotary target when any of the plurality of magnetic circuit sections faces the protective plate. A vacuum processing method using a vacuum processing apparatus equipped with, The relationship between the distance between any of the plurality of first sensors and the first main surface and the amount of reduction in the thickness of the rotary target facing any of the plurality of first sensors, The relationship between the magnetic field strength detected by any of the plurality of second sensors and the distance between any of the plurality of second sensors and the magnetic circuit portion that each of the plurality of second sensors faces. Obtain, The distance between one of the multiple second sensors and the magnetic circuit portion facing one of the multiple second sensors is adjusted so that the magnetic field strength formed on the first main surface from any of the multiple magnetic circuit portions becomes the target value. Vacuum processing method. [Claim 4] A vacuum processing method according to claim 3, Multiple rotary targets are arranged in parallel in a direction intersecting the uniaxial direction, and the sputtering particles are deposited on the substrate. Vacuum processing method.

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