Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device (10) comprises: a semiconductor laser element (20) that includes a surface (20A) from which laser light is emitted; a resin member (80) that is transparent and covers the surface (20A) of the semiconductor laser element (20); and a diffusion material (82) that is mixed into the resin member (80). The diffusion material (82) causes the light emitted from the semiconductor laser element (20) to scatter at the interface between the resin material (80) and the diffusion material (82), and as a result of the diffusion material causing the light to diffuse inside of the resin member (80), the angle-of-spread of the light emitted from the semiconductor light-emitting device (10) is widened.

Description

[Technical Field]

[0001] This disclosure relates to a semiconductor light-emitting device. [Background technology]

[0002] A semiconductor light-emitting device is equipped with a semiconductor light-emitting element as a light source. Typical examples of semiconductor light-emitting elements include semiconductor laser elements such as vertical cavity surface-emitting lasers (VCSELs) and light-emitting diodes (LEDs). Patent document 1 describes a semiconductor light-emitting device using an LED. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2013-41866 [Overview of the project] [Problems that the invention aims to solve]

[0004] The light emitted from semiconductor laser elements has higher directivity than that emitted from LEDs. Therefore, semiconductor laser elements are generally suitable for applications that require high directivity. Conversely, in fields where LEDs are used, a wider beam angle is generally required. For this reason, semiconductor laser elements are usually not suitable for LED applications. [Means for solving the problem]

[0005] A semiconductor light-emitting device according to one aspect of the present disclosure comprises a semiconductor laser element including a light-emitting surface from which laser light is emitted, a translucent resin member covering the light-emitting surface of the semiconductor laser element, and a diffusing material mixed in the resin member. [Effects of the Invention]

[0006] According to the semiconductor light-emitting device of this disclosure, the directionality angle of light emitted from the semiconductor light-emitting device using a semiconductor laser element can be widened. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view of an exemplary semiconductor light-emitting device according to the first embodiment. [Figure 2] Figure 2 is a cross-sectional view taken along line 2-2 in Figure 1. [Figure 3] Figure 3 is a cross-sectional view taken along line 3-3 in Figure 1. [Figure 4] Figure 4 is a schematic perspective view showing the cross-sectional structure of a semiconductor laser device. [Figure 5] Figure 5 is a partially enlarged cross-sectional view of the semiconductor laser device shown in Figure 4. [Figure 6] Figure 6 is a graph showing the directivity of a semiconductor light-emitting device (first sample) without resin components and diffusion material. [Figure 7] Figure 7 is a graph showing the directivity of a semiconductor light-emitting device (second sample) when the blending ratio of the diffusing material to the resin component is 5%. [Figure 8] Figure 8 is a graph showing the directivity of a semiconductor light-emitting device (third sample) when the blending ratio of the diffusing material to the resin component is 20%. [Figure 9] Figure 9 is a graph showing the directivity of a semiconductor light-emitting device (4th sample) when the blending ratio of the diffusing material to the resin component is 40%. [Figure 10] Figure 10 is a graph showing the directivity of a semiconductor light-emitting device (5th sample) when the blending ratio of the diffusing material to the resin component is 60%. [Figure 11] Figure 11 is a graph showing the relationship between the mixing ratio of the diffusing material and the radiant intensity of the semiconductor light-emitting device. [Figure 12] Figure 12 is a graph showing the relationship between the mixing ratio of the diffusing material and the optical output of the semiconductor light-emitting device. [Figure 13]FIG. 13 is a graph showing the directivity in the short side direction of a semiconductor light-emitting device (Sample 6) according to the second embodiment when the amount of the resin member is the first amount A1 and the mixing ratio of the diffusing material is 30%. [Figure 14] FIG. 14 is a graph showing the directivity in the longitudinal direction of Sample 6. [Figure 15] FIG. 15 is a graph showing the directivity in the short side direction of a semiconductor light-emitting device (Sample 7) according to the second embodiment when the amount of the resin member is the first amount A1 and the mixing ratio of the diffusing material is 60%. [Figure 16] FIG. 16 is a graph showing the directivity in the longitudinal direction of Sample 7. [Figure 17] FIG. 17 is a graph showing the directivity in the short side direction of a semiconductor light-emitting device (Sample 8) according to the second embodiment when the amount of the resin member is the second amount A2 (A2 > A1) and the mixing ratio of the diffusing material is 60%. [Figure 18] FIG. 18 is a graph showing the directivity in the longitudinal direction of Sample 8. [Figure 19] FIG. 19 is a graph showing the directivity in the short side direction of a semiconductor light-emitting device (Sample 9) when the amount of the resin member is the first amount A1 and there is no diffusing material. [Figure 20] FIG. 20 is a graph showing the directivity in the longitudinal direction of Sample 9.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments of the semiconductor light-emitting device in the present disclosure will be described with reference to the accompanying drawings. Note that, for the sake of simplicity and clarity of the description, the components shown in the drawings are not necessarily drawn at a certain scale. Also, for ease of understanding, hatching may be omitted in sectional views. The accompanying drawings are merely illustrative of the embodiments of the present disclosure and should not be regarded as limiting the present disclosure.

[0009] The following detailed description includes apparatus, systems, and methods that embody exemplary embodiments of the present disclosure. This detailed description is for illustrative purposes only and is not intended to limit the embodiments of the present disclosure or the application and use of such embodiments.

[0010] [First Embodiment] The following describes a semiconductor light-emitting device 10 according to the first embodiment. Figure 1 is a schematic plan view of an exemplary semiconductor light-emitting device 10. Figure 2 is a cross-sectional view taken along line 2-2 of Figure 1, and Figure 3 is a cross-sectional view taken along line 3-3 of Figure 1.

[0011] In this disclosure, the term "plan view" refers to viewing the semiconductor light-emitting device 10 in the Z-axis direction of the mutually orthogonal XYZ axes shown in Figures 1 to 3. In the semiconductor light-emitting device 10 shown in Figures 1 to 3, the +Z direction is defined as up, the -Z direction as down, the +X direction as right, and the -X direction as left. Unless otherwise specified, "plan view" refers to viewing the semiconductor light-emitting device 10 from above along the Z-axis.

[0012] [Overall configuration of semiconductor light-emitting device 10] As shown in Figures 1 to 3, the semiconductor light-emitting device 10 includes a semiconductor laser element 20, which is a light-emitting element, and a support 30 that supports the semiconductor laser element 20. The semiconductor laser element 20 is a laser diode that emits light in a predetermined wavelength band and functions as a light source for the semiconductor light-emitting device 10. The configuration of the semiconductor laser element 20 is not particularly limited, but in the first embodiment, a vertical-cavity surface-emitting laser (VCSEL) element is used. The light from the semiconductor laser element 20 is emitted in the +Z direction.

[0013] The structure and shape of the support 30 are not particularly limited, but in the first embodiment, the support 30 includes a base material 40 and a conductive part 50, and has a substantially box-shaped appearance with an opening in one direction (+Z direction). The base material 40 and the conductive part 50 form a housing 32 for the semiconductor laser element 20. The base material 40 is formed from, for example, glass epoxy resin, which is an example of a thermosetting resin; nylon or liquid crystal polymer, which is an example of a thermoplastic resin; or aluminum nitride (AlN) or alumina (Al2O3), which is an example of a ceramic. However, the base material 40 is not particularly limited to these materials. The conductive part 50 is formed from, for example, a conductive material such as copper (Cu).

[0014] The configuration and shape of the conductive portion 50 are not particularly limited, but in the first embodiment, the conductive portion 50 is formed by a lead frame and includes a first conductive portion 60 and a second conductive portion 70. As shown in Figure 1, the first conductive portion 60 includes a mounting portion 62 and a plurality (e.g., three) extensions 64 extending from the side edge of the mounting portion 62 (in the example of Figure 1, in a direction parallel to the XY plane). Similarly, the second conductive portion 70 includes a mounting portion 72 and a plurality (e.g., three) extensions 74 extending from the side edge of the mounting portion 72.

[0015] The mounting portion 62 is formed, for example, in a substantially rectangular shape in plan view, and includes a surface 62A provided as a mounting surface and a back surface 62B opposite to surface 62A. Similarly, the mounting portion 72 is formed, for example, in a substantially rectangular shape in plan view, and includes a surface 72A provided as a mounting surface and a back surface 72B opposite to surface 72A. The surfaces 62A, 72A of the mounting portions 62, 72 are located on the bottom surface of the housing portion 32, and the back surfaces 62B, 72B of the mounting portions 62, 72 are exposed from the outer surface (back surface) of the base material 40.

[0016] The configuration of the base material 40 is not particularly limited, but in the first embodiment, the base material 40 includes a partition portion 42 and a peripheral wall portion 44. The partition portion 42 is formed integrally with the peripheral wall portion 44. There is no physical boundary between the partition portion 42 and the peripheral wall portion 44.

[0017] The partition portion 42 is interposed between the mounting portion 62 (first conductive portion 60) and the mounting portion 72 (second conductive portion 70), maintaining an insulated state between the mounting portions 62 and 72. The partition portion 42 includes a surface surface 42A and a back surface 42B opposite to the surface surface 42A. The surface surface 42A of the partition portion 42 is flush with the surfaces 62A and 72A of the mounting portions 62 and 72, and is located on the bottom surface of the housing portion 32. The back surface 42B of the partition portion 42 is flush with the back surfaces 62B and 72B of the mounting portions 62 and 72, and is exposed from the outer surface (back surface) of the base material 40.

[0018] The peripheral wall portion 44 surrounds the semiconductor laser element 20. The housing portion 32 for the semiconductor laser element 20 is partitioned by the peripheral wall portion 44. In the first embodiment, the housing portion 32 is partitioned as an internal space formed by the peripheral wall portion 44, the mounting portions 62, 72 and the partition portion 42.

[0019] The peripheral wall portion 44 is formed, for example, in the shape of a rectangular frame in plan view, and includes first to fourth side walls 44A, 44B, 44C, and 44D. The outer shape of the peripheral wall portion 44 is not particularly limited and may be circular in plan view, or it may be another polygonal shape in plan view (for example, octagonal in plan view). The first side wall 44A and the second side wall 44B face each other, and the third side wall 44C and the fourth side wall 44D face each other. As shown in Figures 1 to 3, in the first embodiment, the three side edges of the mounting portion 62 are covered by the first, second, and third side walls 44A, 44B, and 44C, and the end face of the extension portion 64 is exposed from the outer surface of these first, second, and third side walls 44A, 44B, and 44C. Furthermore, the first, second, and fourth side walls 44A, 44B, and 44D cover the three side edges of the mounting portion 72, and the end faces of the extension portion 74 are exposed from the outer surfaces of these first, second, and fourth side walls 44A, 44B, and 44D.

[0020] The peripheral wall portion 44 functions as a reflector. In the first embodiment, the peripheral wall portion 44 includes an inner wall surface 44R provided as a reflective surface, and this inner wall surface 44R is inclined such that the opening width of the housing portion 32 decreases from the opening end of the housing portion 32 toward the bottom surface (surfaces 62A, 72A, 42A) of the housing portion 32.

[0021] The semiconductor laser element 20 includes a surface 20A provided as a light-emitting surface from which laser light is emitted, a first electrode 22 formed on the surface 20A, a back surface 20B opposite to the surface 20A, and a second electrode 24 formed on the back surface 20B. In the first embodiment, the first electrode 22 is an anode electrode and the second electrode 24 is a cathode electrode.

[0022] The first electrode 22 is formed of, for example, metal and connected (wire-bonded) to the surface 72A of the mounting part 72 by a plurality of wires 26. The material of the wires 26 is not particularly limited, and metals such as gold (Au) can be used. In the example in Figure 1, four wires 26 are arranged in parallel, but the number and arrangement of the wires 26 are not particularly limited.

[0023] The second electrode 24 is formed of, for example, metal and connected (die-bonded) to the surface 62A of the mounting portion 62 by a conductive bonding material 28. The material of the conductive bonding material 28 is not particularly limited, and conductive materials such as a paste or solder containing a metal such as silver (Ag) can be used.

[0024] As shown in Figures 2 and 3, the semiconductor light-emitting device 10 of the first embodiment further includes a translucent resin member 80 that covers the surface 20A (light-emitting surface) of the semiconductor laser element 20, and a diffusing material 82 mixed in the resin member 80.

[0025] The resin member 80 is filled into the housing portion 32 of the support 30 and completely covers the first electrode 22 and wire 26 together with the semiconductor laser element 20. For example, the resin member 80 is filled into the housing portion 32 to the same height as the upper end surface 44T of the peripheral wall portion 44 and includes an upper surface 80T (light emission surface) formed flush with the upper end surface 44T. However, the upper surface 80T of the resin member 80 does not necessarily have to be a perfectly flat surface and may have a slightly concave shape. Therefore, the upper surface 80T (light emission surface) of the resin member 80 is located at the open end of the housing portion 32. The resin member 80 plays the role of refracting and transmitting the light emitted from the semiconductor laser element 20. The material of the resin member 80 is not particularly limited, but for example, a transparent resin such as silicone resin can be used. Note that a phosphor may be added to the resin member 80.

[0026] The diffusing material 82 is dispersed as fine particles in the resin member 80. The diffusing material 82 is mixed with the resin member 80 at a predetermined mixing ratio. In the first embodiment, the diffusing material 82 is mixed with the resin member 80 such that the light from the semiconductor laser element 20 is scattered to a position different from the peak position of the light output of the semiconductor laser element 20. For example, the diffusing material 82 is evenly dispersed within the resin member 80.

[0027] The light emitted by the semiconductor laser element 20 has higher directivity compared to that of a light-emitting diode (LED). In the first embodiment, the semiconductor laser element 20, configured as a VCSEL element, emits light in the +Z direction, which is almost perpendicular to its surface 20A (light-emitting surface). Therefore, for example, if there is no resin member 80 and diffuser 82, the light emitted from the semiconductor laser element 20 in the +Z direction hardly spreads in the direction parallel to the XY plane (i.e., the surface 20A which is the light-emitting surface), and travels almost straight in the +Z direction.

[0028] The diffuser 82 diffuses light within the resin member 80 by reflecting (scattering) light at the interface between the resin member 80 and the diffuser 82. Therefore, the diffuser 82 plays a role in diffusing the light emitted from the semiconductor laser element 20 within the resin member 80, thereby widening the directionality angle of the light emitted from the upper surface 80T of the resin member 80 (ultimately the semiconductor light-emitting device 10).

[0029] The material of the diffuser 82 is not particularly limited, but for example, silica or other glass materials can be used. In the first embodiment, spherical silica filler is used as the diffuser 82. The particle size of the diffuser 82 is not particularly limited, but for example, a particle size that is sufficiently small with respect to the wavelength of light emitted from the semiconductor laser element 20 is selected so that Rayleigh scattering is predominant. For example, the particle size of the diffuser 82 is selected in the range of 0.001 μm to 50 μm.

[0030] The mixing ratio of the diffuser 82 to the resin member 80 (hereinafter sometimes simply referred to as the "mixing ratio of the diffuser 82" or "mixing ratio") is not particularly limited and should be greater than 0% and less than 100%. The higher the mixing ratio of the diffuser 82, the wider the directionality angle of the light emitted from the semiconductor light-emitting device 10 can be. Furthermore, by limiting the upper limit of the mixing ratio of the diffuser 82 to a predetermined value, a significant decrease in the light output and radiant intensity of the semiconductor light-emitting device 10 can be suppressed. For example, in the first embodiment, the mixing ratio of the diffuser 82 is preferably selected in a range greater than 0% and 60% or less, and more preferably in a range of 20% to 60%. The relationship between the mixing ratio of the diffuser 82 and the optical properties of the semiconductor light-emitting device 10 will be described later.

[0031] In the first embodiment, the diffusion material 82 is selected to have a smaller coefficient of thermal expansion than the resin member 80. In this configuration, compared to the case where only the resin member 80 is filled into the housing 32, the thermal stress generated in the resin member 80 can be reduced by the diffusion material 82 mixed with the resin member 80. This makes it possible to suppress wire breakage and other damage to the wire 26 caused by thermal stress in the resin member 80.

[0032] The semiconductor light-emitting device 10 further includes a light-diffusing plate 90 that covers the upper surface 80T (light-emitting surface) of the resin member 80. For clarity, the light-diffusing plate 90 is not shown in Figure 1. The light-diffusing plate 90 is, for example, a rectangular flat plate in plan view and is joined to the upper end surface 44T of the peripheral wall portion 44 by an adhesive (not shown). The material of the light-diffusing plate 90 is not particularly limited, but for example, a translucent resin material such as polycarbonate, polyester, or acrylic can be used. The light-diffusing plate 90 diffuses and transmits the light emitted from the upper surface 80T of the resin member 80.

[0033] In addition to the light diffusion plate 90, a coating member that has been microfabricated to obtain desired optical properties may be provided on the light diffusion plate 90. As such a coating member, for example, a transparent resin material that has been microfabricated to obtain desired optical properties, or microfabricated glass formed in that manner, or glass coated with a resin that has been microfabricated to obtain desired optical properties can be used.

[0034] In the examples shown in Figures 2 and 3, the light diffuser plate 90 is formed to be smaller than the base material 40 in a plan view, but the size of the light diffuser plate 90 can be arbitrarily changed. For example, the light diffuser plate 90 is not limited to covering the entire upper surface 80T of the resin member 80, but may be formed to cover at least the semiconductor laser element 20 in a plan view. In that case, a light-shielding member may be provided on the upper surface 80T of the resin member 80 that is exposed from the light diffuser plate 90.

[0035] [Example configuration of semiconductor laser element 20] Next, an exemplary structure of the semiconductor laser element 20 will be described. The structure of the semiconductor laser element 20 described below is merely an example and should not be interpreted restrictively.

[0036] Figure 4 is a schematic perspective view showing the cross-sectional structure of the semiconductor laser element 20, and Figure 5 is a partially enlarged cross-sectional view of the semiconductor laser element 20 shown in Figure 4. As shown in Figures 4 and 5, the semiconductor laser element 20 includes an element substrate 102, a first semiconductor layer 104, an active layer 106, a second semiconductor layer 108, a current-constricting layer 110, an insulating layer 112, and a conductive layer 114. As shown in Figure 4, the semiconductor laser element 20 has multiple light-emitting regions 120 formed thereon. The light-emitting regions 120 are discretely arranged on the surface 20A of the semiconductor laser element 20 in the region excluding the first electrode 22. The number of light-emitting regions 120 formed on the semiconductor laser element 20 is not particularly limited. Figure 5 shows a magnified view of a portion containing one light-emitting region 120.

[0037] The element substrate 102 is formed of a semiconductor. The type of semiconductor used for the element substrate 102 is not particularly limited, but for example, gallium arsenide (GaAs) can be used. The active layer 106 is composed of a compound semiconductor that emits light with a wavelength of, for example, 980 nm (hereinafter referred to as "λa") by spontaneous emission and stimulated emission. The active layer 106 is located between the first semiconductor layer 104 and the second semiconductor layer 108. In the first embodiment, the active layer 106 is composed of a multiple quantum well structure in which undoped GaAs well layers and undoped AlGaAs barrier layers are alternately stacked. For example, undoped Al 0.35 Ga 0.65 As barrier layers and undoped GaAs well layers are alternately layered in 2 to 6 cycles.

[0038] The first semiconductor layer 104 is typically a DBR (Distributed Bragg Reflector) layer and is formed on the device substrate 102. The first semiconductor layer 104 is formed of a semiconductor of a first conductivity type. In this example, the first conductivity type is n-type. The first semiconductor layer 104 is configured as a DBR to efficiently reflect light emitted from the active layer 106. For example, the first semiconductor layer 104 is formed by stacking multiple layers of pairs, each consisting of two AlGaAs layers with a thickness of λa / 4 and different reflectivity. To illustrate with an example, the first semiconductor layer 104 is, for example, an n-type Al with a relatively low Al composition and a thickness of 600 Å.0.16 Ga 0.84 a GaAs layer (low Al composition layer) and a relatively high Al composition n-type Al 0.84 Ga 0.16 As layer (high Al composition layer) are alternately laminated in a plurality of cycles (for example, 20 cycles). The n-type Al 0.16 Ga 0.84 The As layer is doped with an n-type impurity (for example, Si) at a concentration of, for example, 2×10 17 cm -3 or more and 3×10 18 cm -3 or less. Similarly, the n-type Al 0.84 Ga 0.16 The As layer is doped with an n-type impurity (for example, Si) at a concentration of, for example, 2×10 17 cm -3 or more and 3×10 18 cm -3 or less.

[0039] The second semiconductor layer 108 is typically a DBR layer and is formed of a semiconductor of the second conductivity type. In this example, the second conductivity type is p-type. Instead of this, the first conductivity type may be p-type and the second conductivity type may be n-type. The first semiconductor layer 104 is located between the second semiconductor layer 108 and the element substrate 102. The second semiconductor layer 108 is configured as a DBR for efficiently reflecting the light emitted from the active layer 106. For example, the second semiconductor layer 108 is configured by stacking a plurality of pairs each formed of two AlGaAs layers having a thickness of λa / 4 and different reflectivities. To explain an example, the second semiconductor layer 108 includes a p-type Al 0.16 Ga 0.84 As layer (low Al composition layer) and a p-type Al 0.84 Ga 0.16 As layer (high Al composition layer) are alternately laminated in a plurality of cycles (for example, 20 cycles).

[0040] The current-constricting layer 110 is located within the second semiconductor layer 108. For example, the current-constricting layer 110 is formed from a layer that contains a large amount of Al and is easily oxidized. The current-constricting layer 110 is formed by oxidizing this easily oxidized layer. However, the current-constricting layer 110 does not necessarily have to be formed by oxidation and may be formed by other methods (e.g., ion implantation). An opening 110A is formed in the current-constricting layer 110. Current flows through the opening 110A.

[0041] The insulating layer 112 is formed on the second semiconductor layer 108. The insulating layer 112 is made of, for example, silicon dioxide (SiO2). An opening 112A is formed in the insulating layer 112.

[0042] The conductive layer 114 is formed on the insulating layer 112. The conductive layer 114 is made of a conductive material (e.g., metal). The conductive layer 114 is electrically connected to the second semiconductor layer 108 through an opening 112A in the insulating layer 112. The conductive layer 114 has an opening 114A.

[0043] The light-emitting region 120 is the region where light from the active layer 106 is emitted directly or after reflection. In this example, the light-emitting region 120 has an annular shape in plan view, but its shape is not particularly limited. The light-emitting region 120 is formed by laminating the second semiconductor layer 108, current-constricting layer 110, insulating layer 112, and conductive layer 114 described above, and by forming an opening 110A in the current-constricting layer 110, an opening 112A in the insulating layer 112, and an opening 114A in the conductive layer 114, etc. In the light-emitting region 120, light from the active layer 106 is emitted through the opening 114A of the conductive layer 114.

[0044] [Relationship between the mixing ratio of the diffusion material 82 and the directivity of the semiconductor light-emitting device 10] Next, referring to Figures 6 to 10, the relationship between the mixing ratio of the diffuser 82 to the resin member 80 and the directivity of the semiconductor light-emitting device 10 will be explained. Note that components similar to those in Figures 1 to 5 will be described using the same reference numerals.

[0045] In the first embodiment, the beam angle of the semiconductor light-emitting device 10 is defined as the angular range (half-power angle) in which the optical output of the semiconductor light-emitting device 10 is 50% of its maximum value (maximum peak). Here, in the semiconductor laser element 20 of the first embodiment, the peak of the optical output of the semiconductor laser element 20 is obtained in a direction perpendicular to the surface 20A provided as the light-emitting surface (directly upward in the first embodiment). In this disclosure, for the sake of clarity, the direction in which the peak of the optical output of the semiconductor laser element 20 is obtained relative to the light-emitting surface is defined as the reference direction (reference angle 0 degrees). This reference angle can be called the peak position of the optical output of the semiconductor laser element 20. In Figures 6 to 10, the vertical axis represents the optical output ratio of the semiconductor light-emitting device 10 when the maximum value (maximum peak) of the optical output of the semiconductor light-emitting device 10 is set to 1.0.

[0046] Figures 6 to 10 show the directivity of the first to fifth samples (semiconductor light-emitting devices 10) with, for example, a diffusion material 82 blending ratio of 0% (no diffusion material 82), 5%, 20%, 40%, and 60%, respectively. In order to evaluate the effects of the resin member 80 and the diffusion material 82, these five samples have a configuration in which the semiconductor light-emitting device 10 does not have a light diffusion plate 90. Also, in order to facilitate evaluation, these five samples have a semiconductor laser element 20 with two light-emitting regions 120. The inventors have confirmed that even when the number of light-emitting regions 120 is one or three or more, evaluation results showing a similar trend to those evaluated with these five samples can be obtained.

[0047] Figure 6 shows the unidirectional directivity evaluated using the first sample of the semiconductor light-emitting device 10 when there is no resin member 80 and no diffuser 82, i.e., when the blending ratio of diffuser 82 is 0%. When the blending ratio of diffuser 82 is 0%, the beam angle (angle of half maximum) is approximately 10 degrees. In this first sample, the optical output of the semiconductor light-emitting device 10 contains only one peak (maximum peak) that appears near the reference angle (0 degrees). This maximum peak corresponds to the optical output peak of the semiconductor laser element 20.

[0048] Figure 7 shows the unidirectional directivity evaluated using the second sample of the semiconductor light-emitting device 10 when the blending ratio of the diffuser 82 to the resin member 80 is 5%. When the blending ratio of the diffuser 82 is 5%, the directivity angle is approximately 20 degrees. In the second sample, the light output of the semiconductor light-emitting device 10 includes multiple peaks, and the maximum peak position (or maximum peak angle) where the largest of these multiple peaks is output appears near the reference angle (0 degrees).

[0049] Figure 8 shows the unidirectional directivity evaluated using the third sample of the semiconductor light-emitting device 10 when the blending ratio of the diffuser 82 to the resin member 80 is 20%. When the blending ratio of the diffuser 82 is 20%, the beam angle is approximately 37 degrees. Similar to the second sample, the light output of the semiconductor light-emitting device 10 in the third sample also contains multiple peaks. The position of the maximum peak appears near the reference angle (0 degrees).

[0050] Figure 9 shows the unidirectional directivity evaluated using the fourth sample of the semiconductor light-emitting device 10 when the blending ratio of the diffuser 82 to the resin member 80 is 40%. When the blending ratio of the diffuser 82 is 40%, the directivity angle is approximately 47 degrees. Similar to the second and third samples, the light output of the semiconductor light-emitting device 10 in the fourth sample also contains multiple peaks. However, the position of the maximum peak appears at a position different from the reference angle (0 degrees). This indicates that the position of the maximum peak of the semiconductor light-emitting device 10 is shifted from the reference angle due to light scattering by the diffuser 82.

[0051] Figure 10 shows the unidirectional directivity evaluated using the fifth sample semiconductor light-emitting device 10 when the blending ratio of the diffuser 82 to the resin member 80 is 60%. When the blending ratio of the diffuser 82 is 60%, the directivity angle is approximately 88 degrees. Similar to the second, third, and fourth samples, the light output of the semiconductor light-emitting device 10 in the fifth sample also contains multiple peaks. However, the position of the maximum peak appears slightly different from the reference angle (0 degrees). That is, similar to the fourth sample, this indicates that the position of the maximum peak of the semiconductor light-emitting device 10 is shifted from the reference angle due to light scattering by the diffuser 82.

[0052] From the evaluation results of the first to fifth samples shown in Figures 6 to 10, it can be seen that the beam angle widens as the mixing ratio of the diffusing material 82 increases. Here, as shown in Figure 6, when there is no resin member 80 and diffusing material 82, as described above, the optical output of the semiconductor light-emitting device 10 (first sample) includes only one peak, that is, the optical output peak of the semiconductor laser element 20.

[0053] In contrast, as shown in Figures 7 to 10, when a diffusing material 82 is mixed with the resin member 80, the light output of the semiconductor light-emitting device 10 includes multiple peaks due to the light scattering effect of the diffusing material 82. These multiple peaks occur in a direction perpendicular to the surface 20A (light-emitting surface) of the semiconductor laser element 20, and in an angular direction different from the direction perpendicular to the surface 20A (light-emitting surface). Here, the direction perpendicular to the surface 20A (light-emitting surface) is not limited to the direction directly above, which corresponds to the reference angle (0 degrees), but is intended to include angular directions that deviate slightly from the reference angle.

[0054] As a result, the optical output of the semiconductor light-emitting device 10 (samples 2 to 5) includes multiple peaks at positions other than the maximum peak caused by the optical output peak of the semiconductor laser element 20. Therefore, in samples 2 to 5, the directional characteristics of the semiconductor light-emitting device 10 do not form a smooth parabolic curve. Rather, as shown in the waveforms of Figures 7 to 10, the directional characteristics of the semiconductor light-emitting device 10 exhibit a sawtooth waveform in which, in addition to the maximum peak, multiple smaller peaks appear in a continuous sawtooth (or uneven) pattern. These multiple peaks are caused by the scattering of light at the interface between the resin member 80 and the diffuser 82. Furthermore, the maximum peak position (maximum peak angle) may also take a different angle from the reference angle due to light scattering by the diffuser 82.

[0055] Such a sawtooth waveform differs significantly from the directional waveform observed in typical LEDs. The directional characteristics of typical LEDs trace a smooth parabolic curve. Therefore, the light output of an LED contains only one peak. In contrast, the directional characteristics of the semiconductor light-emitting device 10 of the first embodiment exhibit a sawtooth waveform as shown in Figures 7 to 10, resulting in multiple peaks of light output appearing consecutively in addition to the maximum peak. Such a sawtooth waveform can be approximated by a roughly trapezoidal waveform within the range of the beam angle. As a result, the directional characteristics of the semiconductor light-emitting device 10 have the effect of homogenizing light over the range of the beam angle compared to the directional characteristics of typical LEDs that trace a smooth parabola.

[0056] [Relationship between the mixing ratio of the diffusing material 82 and the radiant intensity of the semiconductor light-emitting device 10] Next, with reference to Figure 11, the relationship between the mixing ratio of the diffusing material 82 to the resin member 80 and the radiant intensity (mW / sr) of the semiconductor light-emitting device 10 will be explained. Figure 11 shows the results of measuring the radiant intensity for the first to fifth samples with mixing ratios of 0%, 5%, 20%, 40%, and 60%, as explained in Figures 6 to 10.

[0057] As shown in Figure 11, the radiant intensity decreases as the mixing ratio of the diffuser 82 increases. Here, the third sample (mixing ratio 20%), the fourth sample (mixing ratio 40%), and the fifth sample (mixing ratio 60%) all yield almost the same radiant intensity. Therefore, in the range of mixing ratios from 20% to 60%, there is no significant decrease in radiant intensity with increasing mixing ratio. Thus, by selecting a mixing ratio within the range of 20% to 60%, it is possible to maintain almost the same radiant intensity while setting a relatively wide beam angle from approximately 37 degrees (see Figure 8) to approximately 88 degrees (see Figure 10).

[0058] [Relationship between the mixing ratio of the diffusing material 82 and the light output of the semiconductor light-emitting device 10] Next, with reference to Figure 12, the relationship between the mixing ratio of the diffuser 82 to the resin member 80 and the light output (mW) of the semiconductor light-emitting device 10 will be explained. Figure 12 shows the results of measuring the light output for the first to fifth samples with mixing ratios of 0%, 5%, 20%, 40%, and 60%, as explained in Figures 6 to 10.

[0059] As shown in Figure 12, nearly equivalent light output was obtained for the first sample (0% blending ratio), the second sample (5% blending ratio), the third sample (20% blending ratio), the fourth sample (40% blending ratio), and the fifth sample (60% blending ratio). Therefore, it can be considered that there is no effect of reduced light output in the range of blending ratio greater than 0% and less than or equal to 60%. For this reason, by selecting a blending ratio in the range of greater than 0% and less than or equal to 60%, it is possible to set the beam angle from an angle greater than approximately 10 degrees (see Figure 6) to approximately 88 degrees (see Figure 10) while maintaining good light output.

[0060] From the above, in the first embodiment, by selecting a mixing ratio of the diffusing material 82 to the resin member 80 in a range greater than 0% and 60% or less, both radiant intensity and light output can be maintained. Furthermore, by selecting a mixing ratio in a range of 20% to 60%, a wider beam angle can be set while maintaining both radiant intensity and light output.

[0061] Furthermore, increasing the mixing ratio of the diffusion agent 82 increases the viscosity of the resin member 80. An increase in the viscosity of the resin member 80 can cause cracks or voids to form in the resin member 80. Therefore, by limiting the upper limit of the mixing ratio of the diffusion agent 82 to a predetermined value (for example, 60%), the increase in the viscosity of the resin member 80 can be suppressed, thereby preventing the occurrence of cracks and voids in the resin member 80.

[0062] Next, the operation of the semiconductor light-emitting device 10 of the first embodiment will be described. The semiconductor laser element 20 is configured as a VCSEL element and emits light in a direction almost perpendicular to its surface 20A (light-emitting surface). The light emitted from the semiconductor laser element 20 is incident on a resin member 80 that covers the surface 20A of the semiconductor laser element 20. The resin member 80 is mixed with a diffuser 82 in a predetermined ratio, and the diffuser 82 diffuses the light inside the resin member 80 by reflecting (scattering) the light at the interface between the resin member 80 and the diffuser 82. This makes it possible to broaden the directionality of the light emitted from the upper surface 80T of the resin member 80 (ultimately the semiconductor light-emitting device 10).

[0063] The semiconductor light-emitting device 10 of the first embodiment has the following advantages. (1-1) The semiconductor light-emitting device 10 comprises a semiconductor laser element 20, a translucent resin member 80 covering the surface 20A (light-emitting surface) of the semiconductor laser element 20, and a diffusing material 82 mixed in the resin member 80. With this configuration, the light emitted from the semiconductor laser element 20 is diffused by the diffusing material 82, and the beam angle of the light emitted from the semiconductor light-emitting device 10 can be widened. As a result, the same directivity as that obtained with an LED can be achieved using the semiconductor laser element 20. Typically, the semiconductor laser element 20 has higher output and lower power consumption than an LED. Therefore, the semiconductor light-emitting device 10 can be realized for LED applications by utilizing the semiconductor laser element 20, which has the advantages of high output and low power consumption. In addition, in a typical LED device, a lens for light diffusion is placed on the light-emitting surface to widen the beam angle. The semiconductor light-emitting device 10 using the semiconductor laser element 20 does not require such a lens, and the beam angle can be widened by the diffusing material 82. Therefore, the semiconductor light-emitting device 10 for LED applications can be realized in a smaller size than an LED device.

[0064] (1-2) As the diffusion material 82, one is selected that has a smaller coefficient of thermal expansion than the resin member 80. In this configuration, compared to the case where only the resin member 80 is filled into the housing 32, the thermal stress generated in the resin member 80 can be reduced by the diffusion material 82 mixed with the resin member 80. This makes it possible to suppress wire breakage, etc., of the wire 26 due to thermal stress in the resin member 80.

[0065] (1-3) The semiconductor light-emitting device 10 further includes a peripheral wall portion 44 that surrounds the semiconductor laser element 20 and functions as a reflector. The resin member 80 is filled into the housing portion 32 of the semiconductor laser element 20, which is partitioned by the peripheral wall portion 44. With this configuration, the light refracted inside the resin member 80 and scattered by the diffuser 82 is reflected by the peripheral wall portion 44 (reflector), thereby increasing the efficiency of light extraction from the upper surface 80T (light-emitting surface) of the resin member 80.

[0066] (1-4) The semiconductor light-emitting device 10 is further provided with a light-diffusing plate 90 that covers the upper surface 80T (light-emitting surface) of the resin member 80. With this configuration, the light that has been diffused by the diffuser 82 and emitted from the upper surface 80T of the resin member 80 can be further diffused by the light-diffusing plate 90. This makes it possible to further widen the directionality angle of the light emitted from the semiconductor light-emitting device 10.

[0067] (1-5) The mixing ratio of the diffuser 82 to the resin member 80 is selected to be greater than 0% and 60% or less. By selecting the mixing ratio of the diffuser 82 within this range, the beam angle can be widened while suppressing a decrease in the light output of the semiconductor light-emitting device 10 (see Figures 7 to 10 and Figure 12).

[0068] (1-6) The mixing ratio of the diffuser 82 to the resin member 80 is selected within the range of 20% to 60%. By selecting the mixing ratio of the diffuser 82 within this range, the beam angle can be widened while suppressing a decrease in the light output and a large decrease in the radiant intensity of the semiconductor light-emitting device 10 (see Figures 8 to 12).

[0069] (1-7) The diffusing material 82 is mixed into the resin member 80 such that the light from the semiconductor laser element 20 is scattered to a position different from the peak position of the light output of the semiconductor laser element 20. In the first embodiment, the diffusing material 82 scatters the light from the semiconductor laser element 20 such that peaks of light output of the semiconductor light-emitting device 10 occur in a direction perpendicular to the surface 20A (light-emitting surface) of the semiconductor laser element 20 and in an angular direction different from the direction perpendicular to the surface 20A. This light scattering effect by the diffusing material 82 makes it possible to homogenize the light emitted from the semiconductor light-emitting device 10.

[0070] (1-8) In the first embodiment, the diffusing material 82 is mixed with the resin member 80 such that the directional characteristics of the semiconductor light-emitting device 10 exhibit a sawtooth waveform in which, in addition to the maximum peak generated by the light output peak of the semiconductor laser element 20, multiple peaks smaller than the maximum peak appear in a continuous sawtooth (or uneven) pattern. Such a directional characteristic exhibiting a sawtooth waveform is approximated by a substantially trapezoidal waveform within the range of the directional angle. As a result, the light can be made more uniform over the range of the directional angle compared to the directional characteristics of a typical LED.

[0071] (1-9) A VCSEL element is used as the semiconductor laser element 20. In this configuration, the directivity angle of the LED can be reproduced by combining the VCSEL element, the resin member 80, and the diffuser 82.

[0072] [Second Embodiment] Next, the semiconductor light-emitting device 10 according to the second embodiment will be described. For the purpose of clarity, the semiconductor light-emitting device 10 of the second embodiment will be described below using the same reference numerals as the semiconductor light-emitting device 10 according to the first embodiment described above.

[0073] In the second embodiment, the semiconductor laser element 20 has a different far-field pattern (FFP) than that of the first embodiment. Specifically, while the semiconductor laser element 20 of the first embodiment has a unimodal FFP (see Figure 6), the semiconductor laser element 20 of the second embodiment has a bimodal FFP. The other configurations of the second embodiment are the same as those of the first embodiment, and the semiconductor light-emitting device 10 of the second embodiment also comprises a semiconductor laser element 20, a resin member 80, and a diffuser 82. The semiconductor laser element 20 is, as in the first embodiment, for example, a VCSEL. The description of the first embodiment can also be applied to the materials, configuration, and other features of the resin member 80 and the diffuser 82.

[0074] In the second embodiment, the resin member 80 mixed with the diffusing material 82 plays a role in changing the FFP of the semiconductor laser element 20, which has a bimodal shape, to the FFP of the semiconductor light-emitting device 10, which has a unimodal shape, while also changing the light emitted from the semiconductor laser element 20 to the light emitted from the semiconductor light-emitting device 10, which has a wider beam angle. This change in the shape of the light intensity distribution (FFP) of the semiconductor light-emitting device 10 depends on the amount of resin member 80 and the mixing ratio of the diffusing material 82 to the resin member 80.

[0075] The directivity of the semiconductor light-emitting device 10 of the second embodiment will be described below with reference to Figures 13 to 20. Here, four samples created under different conditions by changing the amount of resin member 80 and the mixing ratio of diffuser 82 will be used as examples. To distinguish them from the first to fifth samples used in the first embodiment, the four samples used in the second embodiment will be referred to as the sixth to ninth samples. In order to evaluate the effects of the resin member 80 and the diffuser 82, the semiconductor light-emitting device 10 in the sixth to ninth samples does not have a light-diffusing plate 90 (see Figure 2).

[0076] Figures 13 and 14 are graphs (FFP) showing the directivity of the sixth sample semiconductor light-emitting device 10 when the amount of resin member 80 is a first amount A1 and the blending ratio of the diffuser 82 is 30%. Figure 13 shows the directivity along the short direction (Y-axis direction in Figure 1) of the semiconductor light-emitting device 10, and Figure 14 shows the directivity along the long direction (X-axis direction in Figure 1) of the semiconductor light-emitting device 10. Here, the first amount A1 is, for example, the amount of resin member 80 when the resin member 80 is filled into the housing 32 to the point where the upper surface 80T of the resin member 80 is flush with the upper end surface 44T of the support 30. However, the upper surface 80T of the resin member 80 does not necessarily have to be a perfectly flat surface, and may have a slightly concave shape.

[0077] In Figures 13 and 14, the directivity of the sixth sample is shown by a solid line graph, and for comparison, the directivity when the resin member 80 is absent (the diffuser 82 is absent) is shown by a dashed line graph. That is, the dashed line graph corresponds to the directivity of the semiconductor laser element 20. In Figures 13 and 14, the vertical axis represents the optical output ratio of the semiconductor light-emitting device 10 when the maximum value (maximum peak) of the optical output of the semiconductor light-emitting device 10 is set to 1.0. This is also the case for the graphs in Figures 15 to 20, which will be described later.

[0078] As shown in Figures 13 and 14, the FFP (wavelength graph) of the bimodal semiconductor laser element 20 changes to a unimodal FFP (solid line graph) in the sixth sample, which includes the resin member 80 and the diffuser 82. Furthermore, the beam angle (angle at half maximum) of the sixth sample is wider than that of the semiconductor laser element 20 in both the short direction (Figure 13) and the long direction (Figure 14), and has a beam angle of approximately 30 to 35 degrees in both directions.

[0079] Figures 15 and 16 are graphs (FFP) showing the directivity of the semiconductor light-emitting device 10 of the seventh sample when the amount of resin member 80 is the first amount A1 and the blending ratio of the diffuser 82 is 60%. Figure 15 shows the directivity along the short direction of the semiconductor light-emitting device 10 (Y-axis direction in Figure 1), and Figure 16 shows the directivity along the long direction of the semiconductor light-emitting device 10 (X-axis direction in Figure 1). In each figure, the directivity of the seventh sample is shown by a solid line graph, and the directivity when there is no resin member 80 (no diffuser 82), i.e., the directivity of the semiconductor laser element 20, is shown by a dashed line graph.

[0080] As shown in Figures 15 and 16, the FFP (wavelength graph) of the bimodal semiconductor laser element 20 changes to a unimodal FFP (solid line graph) in the seventh sample, which includes the resin member 80 and the diffuser 82. Furthermore, the beam angle of the seventh sample is wider than that of the semiconductor laser element 20 in both the short-side direction (Figure 15) and the long-side direction (Figure 16), and even wider than that of the sixth sample (Figures 13 and 14). This is thought to be because the mixing ratio of the diffuser 82 in the seventh sample is higher than that of the sixth sample. The seventh sample has a beam angle of approximately 40 to 45 degrees in both the short-side and long-side directions.

[0081] Figures 17 and 18 are graphs (FFP) showing the directivity of the semiconductor light-emitting device 10 of the eighth sample when the amount of resin member 80 is the second amount A2 and the blending ratio of the diffuser 82 is 60%. Figure 17 shows the directivity along the short direction of the semiconductor light-emitting device 10 (the Y-axis direction in Figure 1), and Figure 18 shows the directivity along the long direction of the semiconductor light-emitting device 10 (the X-axis direction in Figure 1). In each figure, the directivity of the eighth sample is shown by a solid line graph, and the directivity when there is no resin member 80 (no diffuser 82), i.e., the directivity of the semiconductor laser element 20, is shown by a dashed line graph. Here, the second amount A2 is an amount greater than the first amount A1.

[0082] As shown in Figures 17 and 18, the FFP (wavelength graph) of the bimodal semiconductor laser element 20 changes to a unimodal FFP (solid line graph) in the eighth sample, which includes the resin member 80 and the diffuser 82. Furthermore, the beam angle of the eighth sample is wider than that of the semiconductor laser element 20 in both the short-side direction (Figure 17) and the long-side direction (Figure 18), and even wider than that of the seventh sample (Figures 15 and 16). This is thought to be because the amount of resin member 80 in the eighth sample is increased compared to the seventh sample. The eighth sample has a beam angle of approximately 50 to 55 degrees in both the short-side and long-side directions.

[0083] Figures 19 and 20 are graphs (FFP) showing the directivity of the semiconductor light-emitting device 10 of the ninth sample when the amount of resin member 80 is the first amount A2 and there is no diffuser 82. Figure 19 shows the directivity along the short direction of the semiconductor light-emitting device 10 (Y-axis direction in Figure 1), and Figure 20 shows the directivity along the long direction of the semiconductor light-emitting device 10 (X-axis direction in Figure 1). In each figure, the directivity of the ninth sample is shown by a solid line graph, and the directivity when there is no resin member 80 (no diffuser 82), i.e., the directivity of the semiconductor laser element 20, is shown by a dashed line graph.

[0084] As shown in Figures 19 and 20, compared to the FFP (wavelength graph) of the bimodal semiconductor laser element 20, the shape of the FFP of the ninth sample (solid line graph) shows a slight tendency towards unimodality, but is essentially bimodal. Furthermore, the beam angle of the ninth sample is almost the same as that of the semiconductor laser element 20. This result indicates that the diffusing material 82 has the effect of broadening the beam angle.

[0085] The semiconductor light-emitting device 10 of the second embodiment has the following advantages in addition to the advantages (1-1) to (1-9) of the semiconductor light-emitting device 10 of the first embodiment. (2-1) Even if the semiconductor laser element 20 has a bimodal FFP, the FFP of the semiconductor light-emitting device 10 can be changed to a unimodal type by using a resin member 80 mixed with a diffusing material 82. In addition, the beam angle of the semiconductor light-emitting device 10 can be increased by increasing the mixing ratio of the diffusing material 82 to the resin member 80.

[0086] [Example of changes] Each of the above embodiments can be implemented with the following modifications. Furthermore, each of the above embodiments and the following modifications can be combined with each other to the extent that they do not contradict each other technically.

[0087] The semiconductor laser element 20 is not limited to a VCSEL element, but may be any other semiconductor laser diode. • In the embodiments described above, a package structure in which the semiconductor laser element 20 is mounted on a lead frame (conductor 50) has been described, but the package structure is not limited to one using a lead frame. For example, the semiconductor laser element 20 may be mounted on a conductive layer formed on a ceramic substrate (or other insulating substrate) using a ceramic substrate. Alternatively, the semiconductor laser element 20 may be mounted on a printed circuit board (PCB). Therefore, the package structure is not particularly limited. Furthermore, the semiconductor laser element 20 may be mounted together with other electronic components within a single package.

[0088] In each of the above embodiments, a reflector was formed by the peripheral wall portion 44, but the configuration of the reflector is not particularly limited. The peripheral wall portion 44 does not necessarily have to function as a reflector. In other words, the peripheral wall portion 44 may be provided simply as a wall.

[0089] The semiconductor light-emitting device 10 may not have a reflector. For example, the peripheral wall portion 44 (reflector) may be omitted, and a resin member 80 may be provided in a raised shape to simply cover the surface 20A (light-emitting surface) of the semiconductor laser element 20.

[0090] • A multilayer resin structure using a different resin material may be adopted instead of the resin component 80. • In place of diffusion material 82, two or more types of diffusion materials may be used. • A material with a larger coefficient of thermal expansion than the resin member 80 may be selected as the diffusion material 82. In this case as well, the effect of widening the beam angle can be obtained, similar to the embodiments described above.

[0091] • In the embodiments described above, examples were given for cases where the mixing ratio of the diffusion material 82 to the resin member 80 is greater than 0% and 60% or less. However, the upper limit of the mixing ratio is not necessarily limited to 60%, and other values ​​less than 100% are also acceptable.

[0092] The semiconductor light-emitting device 10 may not have a configuration that includes a light-diffusing plate 90. The resin member 80 does not have to completely fill the housing portion 32 (see Figures 2 and 3). For example, there may be a gap between the resin member 80 and the light diffuser plate 90, or a gap between the resin member 80 and the semiconductor laser element 20, or a gap between the resin member 80 and other members (e.g., the peripheral wall portion 44). In other words, the structure of how the resin member 80 is filled is not particularly limited.

[0093] As used in this disclosure, the term “on” includes the meanings of “on” and “above” unless the context clearly indicates otherwise. Therefore, for example, the expression “the first element is implemented on the second element” is intended to mean that in one embodiment the first element may be in contact with and directly positioned on the second element, while in other embodiments the first element may be positioned above the second element without contact. In other words, the term “on” does not preclude structures in which other elements are formed between the first and second elements.

[0094] The Z-axis direction used in this disclosure does not necessarily have to be vertical, nor does it have to be perfectly aligned with the vertical. Therefore, the various structures described herein (e.g., the structure shown in Figure 9) are not limited to the Z-axis direction "up" and "down" being described herein being vertical "up" and "down". For example, the X-axis direction may be vertical, or the Y-axis direction may be vertical.

[0095] [Note] The technical concepts that can be understood from each of the above embodiments and their modifications are described below. The reference numerals for the components of the embodiments corresponding to the components described in each appendix are shown in parentheses. The reference numerals are shown as examples to aid understanding, and the components described in each appendix should not be limited to those indicated by the reference numerals.

[0096] (Note A1) A semiconductor laser element (20) including a light-emitting surface (20A) from which laser light is emitted, A translucent resin member (80) covering the light-emitting surface (20A) of the semiconductor laser element (20), The resin member (80) is mixed with a diffusion material (82), A semiconductor light-emitting device (10) equipped with the following.

[0097] (Appendix A2) The semiconductor laser element (20) is further surrounded by a reflector (44), The semiconductor light-emitting device (10) described in Appendix A1, wherein the resin member (80) is filled into the housing (32) of the semiconductor laser element (20) which is partitioned by the reflector (44).

[0098] (Note A3) The resin member (80) includes a light-emitting surface (80T) located at the open end of the housing portion (32), The semiconductor light-emitting device (10) according to Appendix A2 further comprises a light-diffusing plate (90) that covers the light-emitting surface (80T) of the resin member (80).

[0099] (Note A4) A semiconductor light-emitting device (10) according to any one of the appendices A1 to A3, wherein the blending ratio of the diffusing material (82) to the resin member (80) is greater than 0% and 60% or less.

[0100] (Note A5) A semiconductor light-emitting device (10) as described in Appendix A4, wherein the blending ratio of the diffusing material (82) to the resin member (80) is 20% or more and 60% or less.

[0101] (Note A6) The semiconductor light-emitting device (10) according to any one of the appendices A1 to A5, wherein the diffusing material (82) is mixed into the resin member (80) such that the light from the semiconductor laser element (20) is scattered to a position different from the peak position of the optical output of the semiconductor laser element (20).

[0102] (Note A7) The semiconductor light-emitting device (10) as described in Appendix A6, wherein the diffusing material is mixed into the resin member (80) such that the directional characteristics of the optical output of the semiconductor light-emitting device (10) exhibit a sawtooth waveform in which, in addition to the maximum peak generated by the optical output peak of the semiconductor laser element (20), a plurality of peaks smaller than the maximum peak appear in a sawtooth pattern in succession.

[0103] (Note A8) The semiconductor light-emitting device (10) described in any one of the appendices A1 to A7, wherein the diffusing material (82) scatters the light from the semiconductor laser element (20) such that peaks in the optical output of the semiconductor light-emitting device (10) occur in a direction perpendicular to the light-emitting surface (20A) and in an angular direction different from the direction perpendicular to the light-emitting surface (20A).

[0104] (Note A9) A semiconductor light-emitting device (10) according to any one of the appendices A1 to A8, wherein the semiconductor laser element (20) is a VCSEL element.

[0105] (Note A10) A semiconductor light-emitting device (10) according to any one of the appendices A1 to A9, wherein the diffusion material (82) is silica filler.

[0106] (Note A11) The semiconductor laser element (20) single A semiconductor light-emitting device (10) having a peak-like far-field image, as described in any one of the appendices A1 to A10.

[0107] (Note A12) The semiconductor light-emitting device (10) described in any one of the appendices A1 to A10, wherein the semiconductor laser element (20) has a bimodal far-field image.

[0108] The above description is illustrative only. Those skilled in the art will recognize that many more possible combinations and substitutions are possible beyond the components and methods (manufacturing processes) enumerated for the purpose of illustrating the technology of this disclosure. This disclosure is intended to encompass all alternatives, variations, and modifications that fall within the scope of this disclosure, including the claims. [Explanation of Symbols]

[0109] 10: Semiconductor light-emitting device 20: Semiconductor laser element 20A: Surface (light-emitting surface) 30:Support 32: Containment Unit 44: Surrounding wall section (reflector) 44R: Inner wall surface (reflective surface) 44T:Top end surface 80: Resin component 80T: Top surface (light exit surface) 82: Diffuser 90: Light Diffuser

Claims

1. A semiconductor laser element including a light-emitting surface from which laser light is emitted, A translucent resin member covering the light-emitting surface of the semiconductor laser element, The diffusion material mixed with the resin member, Equipped with, The semiconductor laser element is a VCSEL element having a bimodal far-field image, The upper surface of the resin member has a recessed structure. A semiconductor light-emitting device in which the amount of the resin member and the blending ratio of the diffusing material to the resin member are set to increase the directional angle of the light emitted from the resin member while changing the bimodal far-field image to a unimodal far-field image.

2. The semiconductor laser element is further provided with a reflector surrounding it. The semiconductor light-emitting apparatus according to claim 1, wherein the resin member is filled in the housing portion of the semiconductor laser element partitioned by the reflector.

3. The resin member includes a light-emitting surface located at the open end of the housing portion, The semiconductor light-emitting apparatus according to claim 2, further comprising a light-diffusing plate that covers the light-emitting surface of the resin member.

4. The semiconductor light-emitting apparatus according to claim 1, wherein the blending ratio of the diffusing material to the resin member is greater than 0% and 60% or less.

5. The semiconductor light-emitting apparatus according to claim 4, wherein the blending ratio of the diffusion material to the resin member is 20% or more and 60% or less.

6. The semiconductor light-emitting apparatus according to claim 1, wherein the diffusing material is mixed into the resin member such that the light from the semiconductor laser element is scattered to a position different from the peak position of the optical output of the semiconductor laser element.

7. The semiconductor light-emitting apparatus according to any one of claims 1 to 6, wherein the diffusing material scatters the light of the semiconductor laser element such that peaks in the optical output of the semiconductor light-emitting apparatus occur in a direction perpendicular to the light-emitting surface and in an angular direction different from the direction perpendicular to the light-emitting surface.

8. The semiconductor light-emitting apparatus according to any one of claims 1 to 6, wherein the diffusion material is silica filler.

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