Semiconductor devices and semiconductor modules

Abstract

To provide a semiconductor device and a semiconductor module, that obtain stable characteristics.SOLUTION: A semiconductor device 100 includes a first semiconductor layer 11, a second semiconductor layer 12, first to third electrodes 21 to 23, an insulating region 35, and a conductive layer 50. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is located on the first semiconductor layer and including a nitride semiconductor. The first electrode is located on the second semiconductor layer. The second electrode is located on the second semiconductor layer and arranged with the first electrode. The third electrode is positioned above the second semiconductor layer with an insulating film part 31a interposed and is positioned between the first electrode and the second electrode. The insulating region is located on the second semiconductor layer and is next to the first electrode between the first electrode and the second electrode. The insulating region includes a first insulating portion 35a and a second insulating portion 35b positioned above the first insulating portion. The conductive layer is located between the first insulating portion and the second insulating portion, and is electrically connected to the first electrode.SELECTED DRAWING: Figure 1

Claims

1. A first semiconductor layer containing a nitride semiconductor, A second semiconductor layer, comprising a nitride semiconductor, is provided on the first semiconductor layer, A first electrode provided on the second semiconductor layer, including a first lower portion and a first upper portion located above the first lower portion, A second electrode is provided on the second semiconductor layer and is aligned with the first electrode in a second direction that intersects with a first direction extending from the first semiconductor layer to the second semiconductor layer, A third electrode is located above the second semiconductor layer via an insulating film and is positioned between the first electrode and the second electrode, An insulating region provided on the second semiconductor layer, located between the first electrode and the second electrode, adjacent to the first electrode, and including a first insulating portion and a second insulating portion located above the first insulating portion, A conductive layer is provided between the first insulating portion and the second insulating portion and is electrically connected to the first electrode, Equipped with, A portion of the conductive layer is a semiconductor device located directly above the first lower part.

2. A first semiconductor layer containing a nitride semiconductor, A second semiconductor layer, comprising a nitride semiconductor, is provided on the first semiconductor layer, A first electrode provided on the second semiconductor layer, A second electrode is provided on the second semiconductor layer and is aligned with the first electrode in a second direction that intersects with a first direction extending from the first semiconductor layer to the second semiconductor layer, A third electrode is located above the second semiconductor layer via an insulating film and is positioned between the first electrode and the second electrode in the second direction, An insulating region provided on the second semiconductor layer, located between the first electrode and the second electrode, adjacent to the first electrode, and including a first insulating portion and a second insulating portion located above the first insulating portion, A conductive layer is provided between the first insulating portion and the second insulating portion, connected to a circuit, and set to a potential lower than the potential of the first electrode by the circuit, Equipped with, The first electrode includes a first electrode portion and a first extension portion extending from the upper end of the first electrode portion toward the second electrode side. At least a portion of the conductive layer is located below the first extension and overlaps with the first extension in the first direction. The circuit is a semiconductor device that includes a Zener diode, the anode of which is connected to the conductive layer side.

3. The semiconductor device according to claim 1 or 2, further comprising a third insulating portion provided between the conductive layer and the first electrode, aligned with the conductive layer in a direction perpendicular to the first direction.

4. The conductive layer has an end on the side of the third electrode, The semiconductor device according to claim 1 or 2, wherein the distance along the second direction between the end and the first electrode is shorter than the distance along the second direction between the end and the third electrode.

5. The third electrode is further provided with a conductive member that is electrically connected to and covers the third electrode, The semiconductor device according to claim 1 or 2, wherein the conductive layer is aligned with the conductive member in the second direction.

6. The first electrode is First electrode section and A first extension portion extending from the upper end of the first electrode portion toward the second electrode portion, Includes, The semiconductor device according to claim 1, wherein at least a portion of the conductive layer is located between the first extension and the second semiconductor layer.

7. The semiconductor device according to claim 6, wherein the length of the conductive layer along the second direction is longer than the length of the first extension along the second direction.

8. The semiconductor device according to claim 2, The aforementioned circuit, Equipped with, The aforementioned semiconductor device is A contact portion in contact with the conductive layer, An electrode pad electrically connected to the contact portion and electrically connected to the circuit, Includes, The first or second electrode is a semiconductor module electrically connected to an external load.

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