Substrate processing apparatus and cooling method

Abstract

Disclosed is a substrate processing apparatus which includes a member, a cooler, and a control unit. The member provides a flow path therein, the flow path having an inlet and an outlet. The cooler is configured so as to cool the member. The cooler includes a mist generator, a cold air supplier, and a decompression pump. The mist generator is configured so as to generate a mist of a cooling liquid, and is connected to the inlet of the flow path. The cold air supplier is connected to the inlet of the flow path. The decompression pump is connected to the outlet of the flow path. The control unit is configured to control the cooler so as to repeatedly execute processing that includes: (a) a step for supplying a mist from the mist generator to the flow path that is decompressed by the decompression pump; (b) a step for supplying a cold air from the cold air supplier to the flow path; and (c) a step for evacuating the flow path by the decompression pump.

Description

【Technical Field】 【0001】 Exemplary embodiments of the present disclosure relate to a substrate processing apparatus and a cooling method. 【Background Art】 【0002】 Semiconductor manufacturing apparatuses are used in the processing of substrates. Patent Document 1 below describes a technique of supplying mist to a flow path of a chamber and cooling the chamber by the heat of vaporization of the mist. 【Prior Art Documents】 【Patent Documents】 【0003】 【Patent Document 1】 Japanese Patent Application Laid-Open No. 2005-197600 【Summary of the Invention】 【Problems to be Solved by the Invention】 【0004】 The present disclosure provides a technique for efficiently cooling members inside a substrate processing apparatus. 【Means for Solving the Problems】 【0005】 In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a member, a cooler, and a control unit. The member provides a flow path having an inlet and an outlet inside thereof. The cooler is configured to cool the member. The cooler includes a mist generator, a cold air supplier, and a vacuum pump. The mist generator is configured to generate mist of a coolant and is connected to the inlet of the flow path. The cold air supplier is connected to the inlet of the flow path. The vacuum pump is connected to the outlet of the flow path. The control unit controls the cooler to repeatedly execute a process including: (a) supplying mist from the mist generator to the flow path depressurized by the vacuum pump; (b) supplying cold air from the cold air supplier to the flow path; and (c) evacuating the flow path by the vacuum pump. 【Effects of the Invention】 【0006】 According to one exemplary embodiment, a technique is provided for efficiently cooling components within a substrate processing apparatus. [Brief explanation of the drawing] 【0007】 [Figure 1] This is a diagram illustrating an example configuration of a plasma processing system. [Figure 2] This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. [Figure 3] This is a diagram showing a cooler according to one exemplary embodiment. [Figure 4] This figure shows an example of a mist generator that can be used in a cooler according to one exemplary embodiment. [Figure 5] This is a flowchart of a cooling method according to one exemplary embodiment. [Figure 6] This is a timing chart of the pressure in the flow path in a cooling method according to one exemplary embodiment. [Figure 7] Figures 7(a) to 7(d) are tables showing examples of the states of various valves and pumps in a cooling method according to one exemplary embodiment. [Figure 8] Figures 8(a) to 8(d) are tables showing examples of the states of various valves and pumps in a cooling method according to one exemplary embodiment. [Figure 9] Figures 9(a) to 9(d) are tables showing examples of the states of various valves and various pumps in a cooling method according to one exemplary embodiment. [Figure 10] Figures 10(a) to 10(d) are tables showing examples of the states of various valves and pumps in a cooling method according to one exemplary embodiment. [Figure 11] Figures 11(a) to 11(f) are diagrams showing examples of flow paths in a base according to one exemplary embodiment. [Figure 12]This figure shows a modified example of a plasma processing apparatus according to one exemplary embodiment. [Modes for carrying out the invention] 【0008】 Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals. 【0009】 Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate. 【0010】 The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave-excited plasma (HWP), or a surface wave plasma (SWP), etc. Various types of plasma generation units, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz. 【0011】 The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network). 【0012】 The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. 【0013】 The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed within the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10. 【0014】 The substrate support unit 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112. 【0015】 In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b placed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode, coupled to the RF power supply 31 and / or DC power supply 32 described later, may be placed within the ceramic member 1111a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal, described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode. 【0016】 The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material. 【0017】 Further, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a. 【0018】 The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes at least one upper electrode. The gas introduction portion may include, in addition to the shower head 13, one or more side gas injection portions (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 10a. 【0019】 The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure control type flow controller. Further, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow rate of at least one process gas. 【0020】 The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W. 【0021】 In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode. 【0022】 The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed. 【0023】 The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode. 【0024】 In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or a combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b. 【0025】 The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof. 【0026】 The following describes a cooler for a substrate processing apparatus according to one exemplary embodiment, with reference to Figure 3. Figure 3 is a diagram showing a cooler according to one exemplary embodiment. The cooler 50 shown in Figure 3 is configured to cool a component having a flow path in a substrate processing apparatus. In the example shown in Figure 3, the component cooled by the cooler 50 is a substrate support 11, more specifically, a base 1110. The cooler 50 includes a mist generator 51, a cold air supply 52, and a pressure reducing pump 53. The cooler 50 may further include a carrier gas supply 54. 【0027】 The mist generator 51 is configured to generate mist CLM (see Figure 4) of the coolant CL. The mist generator 51 can generate mist CLM of the coolant CL from the reservoir 59, which will be described later. The coolant CL may include water, alcohol, ammonia, or a fluorinated liquid. The water may be pure water, tap water, or tap water with additives such as rust inhibitors. The alcohol may be, for example, an aqueous solution of ethylene glycol. The fluorinated liquid may include a fluorinated inert liquid or a perfluoropolyether fluorinated fluid. 【0028】 The mist generator 51 is connected to the inlet 1110i of the flow path 1110a of the substrate support section 11. The mist generator 51 may also be connected to the inlet 1110i via a valve VM. The mist CLM generated by the mist generator 51 may be supplied to the flow path 1110a together with the carrier gas supplied from the carrier gas supply section 54. The carrier gas is, for example, dry air. 【0029】 Figure 4 shows an example of a mist generator that can be used in a cooler according to one exemplary embodiment. In one embodiment, the mist generator 51 may be a spray nozzle atomizing type mist generator, as shown in Figure 4. In the embodiment of Figure 4, the mist generator 51 includes an inner nozzle 51i and an outer nozzle 51o. The inner nozzle 51i is configured to spray a mist CLM of pressurized coolant CL from its orifice. The outer nozzle 51o provides a carrier gas flow path on the outer circumference of the inner nozzle 51i. The outer nozzle 51o provides its orifice in front of the orifice of the inner nozzle 51i. The flow path of the outer nozzle 51o extends in front of the orifice of the inner nozzle 51i and connects to the orifice of the outer nozzle 51o. According to the mist generator 51 shown in Figure 4, the mist CLM ejected from the orifice of the inner nozzle 51i is ejected together with the carrier gas from the orifice of the outer nozzle 51o and supplied to the flow path 1110a. 【0030】 Returning to Figure 3, the cold air supply unit 52 is connected to the inlet 1110i of the flow path 1110a. The cold air supply unit 52 may also be connected to the inlet 1110i via a valve VC. The cold air supply unit 52 is configured to generate cold air from the air supplied by the air supply unit 55 and supply it to the flow path 1110a. The air supplied by the air supply unit 55 is, for example, dry air. The cold air supply unit 52 may also be, for example, an air cooler. The cooler 50 may further include a pressure sensor 61. The pressure sensor 61 is configured to measure the pressure in the piping that connects the mist generator 51 and the cold air supply unit 52 to the inlet 1110i. 【0031】 The pressure reducing pump 53 is connected to the outlet 1110o of the flow path 1110a. The pressure reducing pump 53 may also be connected to the outlet 1110o via a valve VE. The pressure reducing pump 53 is configured to discharge the gas and coolant CL (or its gaseous form) from the flow path 1110a. The pressure reducing pump 53 may be, for example, a liquid-seal pump. The cooler 50 may further include a pressure sensor 62. The pressure sensor 62 is configured to measure the pressure in the piping connecting the pressure reducing pump 53 and the outlet 1110o to each other. 【0032】 With this cooler 50, the cold air supplied from the cold air supplier 52 promotes the condensation of mist CLM in the flow path 1110a (adsorption onto the surface defining the flow path 1110a). Furthermore, the vaporization of the coolant CL condensed in the flow path 1110a is promoted by the depressurization (or vacuuming) of the flow path 1110a by the depressurization pump 53. Therefore, with the cooler 50, it is possible to efficiently cool the substrate support part 11 or the base 1110. In addition, no heat exchange medium is supplied to the flow path 1110a under pressure. Therefore, with the cooler 50, expansion of the substrate support part 11 (or base 1110) is suppressed. 【0033】 In one embodiment, the cooler 50 may further include a trap 56 and a recovery unit. The trap 56 is connected to the outlet 1110o via a pressure reducing pump 53. The trap 56 includes a tank. The trap 56 receives a mixture of gas and coolant CL (or its gaseous form) from the pressure reducing pump 53 into its tank. The trap 56 includes a separator 56s, which is configured to separate the gas from the coolant CL. The gas separated by the separator 56s is discharged to the outside via a filter 60. The coolant CL separated by the separator 56s is stored in the tank of the trap 56. 【0034】 The recovery unit is configured to recover and store the coolant CL and is connected between the collector 56 and the mist generator 51. In one embodiment, the recovery unit may include a receiver 57, a liquid circulation pump 58, and a reservoir 59. The receiver 57 has a tank for storing the coolant CL and is connected between the collector 56 and the liquid circulation pump 58. The tank of the receiver 57 may be connected to the tank of the collector 56 via a valve RV. The reservoir 59 has another tank for storing the coolant CL and is connected between the liquid circulation pump 58 and the mist generator 51. With this recovery unit, the liquid circulation pump 58 is activated so that the coolant CL in the tank of the collector 56 is returned to the tank of the reservoir 59 via the tank of the receiver 57 and the liquid circulation pump 58. The coolant CL returned to the reservoir 59 is reused in the mist generator 51. 【0035】 In one embodiment, the control unit 2 may be configured to adjust one or more of a plurality of control parameters for adjusting the temperature of a component such as the substrate support portion 11 by the cooler 50. The plurality of control parameters include the amount of mist CLM generated by the mist generator 51, the temperature of the mist CLM, the length of time the mist CLM is supplied to the flow path 1110a, the flow rate of the carrier gas, the flow rate of the cold air supplied from the cold air supplier 52, the temperature of the cold air, the length of time the cold air is supplied, and the exhaust speed of the pressure reducing pump 53. The plurality of control parameters may further include the time the valve VE is open and / or closed, the mist CLM supply stop time, and the cold air supply stop time. 【0036】 The following describes a cooling method according to one exemplary embodiment, with reference to Figures 5 and 6. Figure 5 is a flowchart of the cooling method according to one exemplary embodiment. Figure 6 is a timing chart of the pressure in the flow path in the cooling method according to one exemplary embodiment. In each step of the cooling method shown in Figure 5 (hereinafter referred to as "Method MT"), each part of the cooler 50 can be controlled by the control unit 2. 【0037】 The cooling method shown in Figure 5 (hereinafter referred to as "Method MT") is initiated in process STi. In process STi, the pressure in the flow path 1110a is set to the initial pressure Pi (see Figure 6). The initial pressure Pi is, for example, atmospheric pressure. 【0038】 In the subsequent step STd, the pressure in the flow path 1110a is reduced by the depressurizing pump 53. As shown in Figure 5, in step STd, the pressure in the flow path 1110a is reduced until it reaches a first pressure Pv. The first pressure Pv may be the lowest pressure that the depressurizing pump 53 can achieve. In step STd, after the pressure in the flow path 1110a reaches the first pressure Pv, the state in which the pressure in the flow path 1110a is maintained at the first pressure Pv may continue for a specified time. 【0039】 In the subsequent step STa, mist CLM of the coolant CL is supplied from the mist generator 51 to the flow path 1110a, which has been depressurized by the depressurizing pump 53. The mist CLM is supplied together with carrier gas from the carrier gas supply unit 54. With the supply of mist CLM in step STa, the pressure in the flow path 1110a reaches a second pressure Pc. The second pressure Pc is higher than the first pressure Pv. In step STa, after the pressure in the flow path 1110a reaches the second pressure Pc, a standby state may continue for a specified time. 【0040】 In the subsequent step STb, cold air from the cold air supply unit 52 is supplied to the flow path 1110a. In step STb, the cold air from the cold air supply unit 52 promotes the condensation of mist CLM within the flow path 1110a (adsorption onto the surface defining the flow path 1110a). 【0041】 Method MT may further include a subsequent step STw. After the supply of cold air in step STb is stopped, in step STw, a waiting state continues for a specified time. In step STw, condensation of mist CLM in the flow path 1110a (adsorption onto the surface defining the flow path 1110a) proceeds. 【0042】 In the subsequent step STc, the pressure in the flow path 1110a is reduced by the depressurizing pump 53. In step STc, the flow path 1110a may also be evacuated by the depressurizing pump 53. As a result, the coolant CL in the flow path 1110a vaporizes, and the substrate support part 11 (or base 1110) is cooled by the heat of vaporization. In step STc, the pressure in the flow path 1110a may be reduced until it reaches a first pressure Pv. In step STc, after the pressure in the flow path 1110a reaches the first pressure Pv, the state in which the pressure in the flow path 1110a is maintained at the first pressure Pv may continue for a specified time. Note that the pressure in the flow path 1110a reached in step STc may be different from the first pressure Pv. 【0043】 In method MT, a cycle including processes STa to STc may be repeated. In this case, it is determined in process STj whether or not a stop condition is met. The stop condition is met when the number of cycle repetitions reaches a predetermined number, or when the cycle repetition period reaches a predetermined time length. If it is determined that the stop condition is not met in process STj, the cycle is executed again. On the other hand, if it is determined that the stop condition is met in process STj, the process moves to process STv. 【0044】 In step STv, the flow path 1110a is evacuated by the depressurizing pump 53. Step STv almost completely removes the coolant CL from the flow path 1110a. In the subsequent step STr, the pressure in the flow path 1110a is returned to the initial pressure Pi. In step STr, the pressure in the flow path 1110a may be returned to the initial pressure by supplying air to the flow path 1110a from the cold air supplyer 52. In step STr, the pressure in the flow path 1110a may be set to atmospheric pressure. 【0045】 In one embodiment, the cycle including steps STa to STc may further include collecting the coolant CL with a collector 56 connected to a vacuum pump 53. The cycle may also further include recovering the coolant CL with the recovery device described above. 【0046】 In method MT, as described above, each part of the cooler 50 can be controlled by the control unit 2. Figures 7(a) to 7(d), 8(a) to 8(d), 9(a) to 9(d), and 10(a) to 10(d) are tables showing examples of the states of various valves and pumps in a cooling method according to one exemplary embodiment. These tables show the states of valve VM, valve VC, valve VE, and valve RV in each process. In these tables, "○" indicates that the valve is open, and "×" indicates that the valve is closed. These tables also show the states of the pressure reducing pump 53 and the liquid circulation pump 58 in each process. In these tables, "ON" indicates that the pump is operating, and "OFF" indicates that the pump is stopped. In each step of method MT, the control unit 2 may control the states of valve VM, valve VC, valve VE, and valve RV, as well as the states of the pressure reducing pump 53 and the liquid circulation pump 58, as shown in these tables. 【0047】 The following refers to Figures 11(a) to 11(f). Each of Figures 11(a) to 11(f) shows an example of a flow path in a base according to one exemplary embodiment. The flow path 1110a may be a single flow path that extends without branching between the inlet 1110i and the outlet 1110o. Alternatively, as shown in Figures 11(a) to 11(f), the flow path 1110a may include a plurality of branched flow paths 1110b that branch off from at least one inlet 1110i and merge into at least one outlet. In each example of Figures 11(a) to 11(f), the adsorption of mist CLM onto the surface defining the flow path 1110a and the detachment of coolant CL from the surface are facilitated. 【0048】 In each of the examples in Figures 11(a) to 11(f), multiple branched channels 1110b branch off from a single inlet 1110i and merge into a single outlet 1110o. The multiple branched channels 1110b extend circumferentially around the central axis of the base 1110. In the examples shown in Figures 11(a) and 11(c) to 11(e), the single inlet 1110i is located in the center of the base 1110, and the single outlet 1110o is located on the outer edge of the base 1110. However, as in the example in Figure 11(b), the single inlet 1110i may be located on the outer edge of the base 1110, and the single outlet 1110o may be located in the center of the base 1110. In addition, in the example of Figure 11(f), the single inlet 1110i is provided on the outer edge of the base 1110, and the single outlet 1110o is provided on the outer edge of the base 1110 on the opposite side from the single outlet 1110o. 【0049】 In the example of Figure 11(g), a single inlet 1110i is provided in the center of the base 1110, and multiple outlets 1110o are provided on the outer edge of the base 1110. Multiple branched channels 1110b branch off from the single inlet 1110i and merge at the outer edge of the base 1110, including the multiple outlets 1110o. The multiple branched channels 1110b extend radially between the center of the base 1110 and the outer edge of the base 1110. Note that the single outlet 1110o may be provided in the center of the base 1110, and the multiple inlets 1110i may be provided on the outer edge of the base 1110. 【0050】 In the exemplary embodiments described above, the component cooled by the cooler 50 was the substrate support 11 (or its base 1110). In another exemplary embodiment, the component cooled by the cooler 50 may be a component other than the substrate support 11. See Figure 12 below. Figure 12 shows a modified example of a plasma processing apparatus according to one exemplary embodiment. In the plasma processing apparatus 1 shown in Figure 12, the showerhead 13 includes the upper electrode 14 described above. The upper electrode 14 provides a flow path 142f within it. The upper electrode 14 may include a top plate 141 and a support 142. The top plate 141 extends over the plasma processing space 10s so as to be in contact with the plasma processing space 10s. The top plate 141 may be made of a conductive material such as silicon. The support 142 detachably supports the top plate 141. The support 142 may be made of a metallic material such as aluminum. The support 142 may provide a flow path 142f and a gas diffusion chamber 13b. Multiple gas inlets 13c may be formed in the support 142 and the top plate 141. In addition, in the plasma processing apparatus 1 shown in Figure 12, the side wall 10a of the chamber 10 may provide a flow path 10f within it. 【0051】 In the plasma processing apparatus 1 shown in Figure 12, one or more coolers 50 may be connected to one or more of the flow paths 10f, 142f, and 1110a. That is, in the plasma processing apparatus 1, one or more components cooled by one or more coolers 50 may be one or more of the upper electrode 14 (or support 142), the side wall 10a of the chamber 10, and the substrate support portion 11 (or base 1110). 【0052】 Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments. 【0053】 Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E13] below. 【0054】 [E1] A member that provides a flow path having an inlet and an outlet inside it, A cooler configured to cool the aforementioned member, Control unit and Equipped with, The aforementioned cooler is, It is configured to generate coolant mist, and includes a mist generator connected to the inlet, A cold air supply unit connected to the aforementioned inlet, A pressure reducing pump connected to the outlet, Includes, The control unit controls the cooler, (a) A step of supplying the mist from the mist generator to the flow path which has been depressurized by the depressurizing pump, (b) A step of supplying cold air from the cold air supplyer to the flow path, (c) A step of evacuating the flow path using the pressure reducing pump, It is configured to repeatedly execute a process that includes the following: Circuit board processing equipment. 【0055】 [E2] A collector connected to the outlet via the aforementioned pressure reducing pump and configured to collect the coolant, A recovery unit is configured to recover and store the aforementioned coolant, and is connected between the collector and the mist generator. The substrate processing apparatus described in E1, further comprising the above. 【0056】 [E3] The aforementioned recovery device is Liquid circulation pump and A receiver having a tank for storing the coolant, connected between the collector and the liquid circulation pump, A storage device having a separate tank for storing the coolant, connected between the liquid circulation pump and the mist generator, A substrate processing apparatus as described in E2, including the one described above. 【0057】 [E4] The substrate processing apparatus according to any one of E1 to E3, further comprising a carrier gas supply unit connected to the inlet via the mist generator and configured to supply a carrier gas to be supplied to the flow path together with the mist. 【0058】 [E5] The substrate processing apparatus according to E4, wherein the control unit is configured to adjust one or more of a plurality of control parameters, including the amount of mist generated by the mist generator, the temperature of the mist, the length of time the mist is supplied to the flow path, the flow rate of the carrier gas, the flow rate of the cold air supplied from the cold air supply unit, the temperature of the cold air, the length of time the cold air is supplied, and the exhaust speed of the pressure reducing pump. 【0059】 [E6] The substrate processing apparatus according to any one of E1 to E5, wherein the flow path includes a plurality of branching flow paths that branch off from the inlet and merge into the outlet. 【0060】 [E7] The substrate processing apparatus according to any one of E1 to E6, wherein the coolant is water, alcohol, ammonia, or a fluorine-based liquid. 【0061】 [E8] Chamber and, A substrate support portion arranged within the chamber, Furthermore, The aforementioned member is the substrate support portion. A substrate processing apparatus as described in any one of items E1 to E7. 【0062】 [E9] Chamber and, A substrate support portion arranged within the chamber, An upper electrode provided above the substrate support portion, Furthermore, The member is the upper electrode, A substrate processing apparatus as described in any one of items E1 to E7. 【0063】 [E10] Equipped with an additional chamber, The aforementioned member is the side wall of the chamber, A substrate processing apparatus as described in any one of items E1 to E7. 【0064】 [E11] The substrate processing apparatus is a plasma processing apparatus, as described in any one of items E1 to E10. 【0065】 [E12] (a) A step of supplying coolant mist from a mist generator to a flow path of a component whose pressure has been reduced by a depressurizing pump, (b) A step of supplying cold air from a cold air supplyer to the flow path, (c) A step of evacuating the flow path using the pressure reducing pump, (d) A step of repeating a cycle including (a), (b), and (c), A cooling method, including 【0066】 [E13] The aforementioned cycle is The coolant is collected by a collector connected to the aforementioned pressure pump, and The coolant is recovered by a recovery device connected between the collector and the mist generator. The cooling method described in E12, including the method described in E12. 【0067】 From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of symbols] 【0068】 1...Plasma processing apparatus, 10...Chamber, 11...Substrate support section, 1110...Base, 1110a...Flow channel, 1110i...Inlet, 1110o...Outlet, 50...Cooler, 51...Mist generator, 52...Cold air supply unit, 53...Depressurizing pump, 54...Carrier gas supply section, 56...Collector, 57...Liquid receiver, 58...Liquid circulation pump, 59...Storage unit.

Claims

[Claim 1] A member that provides a flow path having an inlet and an outlet inside it, A cooler configured to cool the aforementioned member, Control unit and Equipped with, The aforementioned cooler is, It is configured to generate coolant mist, and includes a mist generator connected to the inlet, A cold air supply unit connected to the aforementioned inlet, A pressure reducing pump connected to the outlet, Includes, The control unit controls the cooler, (a) A step of supplying the mist from the mist generator to the flow path which has been depressurized by the depressurizing pump, (b) A step of supplying cold air from the cold air supplyer to the flow path, (c) A step of evacuating the flow path using the pressure reducing pump, It is configured to repeatedly execute a process that includes the following: Circuit board processing equipment. [Claim 2] A collector connected to the outlet via the aforementioned pressure reducing pump and configured to collect the coolant, A recovery unit is configured to recover and store the aforementioned coolant, and is connected between the collector and the mist generator. The substrate processing apparatus according to claim 1, further comprising the following: [Claim 3] The aforementioned recovery device is Liquid circulation pump and A receiver having a tank for storing the coolant, connected between the collector and the liquid circulation pump, A storage device having a separate tank for storing the coolant, connected between the liquid circulation pump and the mist generator, A substrate processing apparatus according to claim 2, including the following: [Claim 4] The substrate processing apparatus according to any one of claims 1 to 3, further comprising a carrier gas supply unit connected to the inlet via the mist generator and configured to supply a carrier gas to be supplied to the flow path together with the mist. [Claim 5] The substrate processing apparatus according to claim 4, wherein the control unit is configured to adjust one or more of a plurality of control parameters, including the amount of mist generated by the mist generator, the temperature of the mist, the length of time the mist is supplied to the flow path, the flow rate of the carrier gas, the flow rate of the cold air supplied from the cold air supply unit, the temperature of the cold air, the length of time the cold air is supplied, and the exhaust speed of the pressure reducing pump. [Claim 6] The substrate processing apparatus according to any one of claims 1 to 3, wherein the flow path includes a plurality of branched flow paths that branch off from the inlet and merge with the outlet. [Claim 7] The substrate processing apparatus according to any one of claims 1 to 3, wherein the coolant is water, alcohol, ammonia, or a fluorine-based liquid. [Claim 8] Chamber and, A substrate support portion arranged within the chamber, Furthermore, The aforementioned member is the substrate support portion. A substrate processing apparatus according to any one of claims 1 to 3. [Claim 9] Chamber and, A substrate support portion arranged within the chamber, An upper electrode provided above the substrate support portion, Furthermore, The member is the upper electrode, A substrate processing apparatus according to any one of claims 1 to 3. [Claim 10] Equipped with an additional chamber, The aforementioned member is the side wall of the chamber, A substrate processing apparatus according to any one of claims 1 to 3. [Claim 11] The substrate processing apparatus is a plasma processing apparatus according to any one of claims 1 to 3. [Claim 12] (a) A step of supplying coolant mist from a mist generator to a flow path of a component whose pressure has been reduced by a depressurizing pump, (b) A step of supplying cold air from a cold air supplyer to the flow path, (c) A step of evacuating the flow path using the pressure reducing pump, (d) A step of repeating the cycle including (a), (b), and (c), A cooling method, including [Claim 13] The aforementioned cycle is The coolant is collected by a collector connected to the aforementioned pressure pump, and The coolant is recovered by a recovery device connected between the collector and the mist generator. The cooling method according to claim 12, including the following:

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