A wafer handling end effector configured to selectively lift a wafer from its top surface, a probe system including the wafer handling end effector, and a method for utilizing the wafer handling end effector.

Abstract

Disclosed herein are a wafer-handling end effector, a probe system including the wafer-handling end effector, and a method of utilizing the wafer-handling end effector. The wafer-handling end effector is configured to selectively lift a wafer from an upper surface of the wafer and includes a blade, a surface extension, and an attachment mechanism. The blade defines a wafer-facing blade side and includes a gas distribution manifold in fluid communication with the wafer-facing blade side. The surface extension defines a wafer-facing extension side extending away from the blade. The surface extension extends at least partially around the wafer-facing blade side and includes at least three protruding regions protruding from the wafer-facing extension side and configured to physically contact the upper surface of the wafer. The attachment mechanism is configured to selectively attach the surface extension to the blade and selectively detach the surface extension from the blade.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims the priority of U.S. Patent Application No. 18 / 506,935, filed on November 10, 2023, and U.S. Provisional Patent Application No. 63 / 431,433, filed on December 9, 2022, the contents of which are hereby incorporated by reference in their entirety.

[0002] The present invention generally relates to a wafer handling end effector configured to selectively lift a wafer from the upper surface of the wafer, a probe system including the wafer handling end effector, and / or a method of using the wafer handling end effector.

Background Art

[0003] A wafer handling end effector configured to selectively lift a wafer from the upper surface of the wafer can be used by a wafer handling robot to grip, grasp, lift, and / or transport a wafer between a semiconductor manufacturing apparatus, a sorting apparatus, and / or a testing apparatus. Some conventional wafer handling end effectors configured to selectively lift a wafer from the upper surface of the wafer are configured to contact the wafer within an edge exclusion region of the wafer and can be configured to transport only wafers of a specific size or diameter, such as wafers with a diameter of 100 millimeters (mm), wafers with a diameter of 200 mm, and / or wafers with a diameter of 300 mm.

[0004] Other conventional wafer handling end effectors configured to selectively lift wafers from their top surface are configured to contact the central region of the wafer containing integrated circuit devices. Such wafer handling end effectors may be effective in selectively lifting wafers of various different sizes or diameters. However, these wafer handling end effectors may only be used for specific wafers, under specific conditions, and / or in specific processes during the manufacturing of integrated circuit devices. For example, such wafer handling end effectors may come into contact with integrated circuit devices, potentially causing damage.

[0005] In some environments, it may be desirable for a specific wafer handling robot to selectively lift wafers from their top surface and / or to transport wafers of different sizes without contacting integrated circuit devices formed on the wafer. However, it is generally not possible to use a conventional single wafer handling end effector for multiple wafer sizes.

[0006] Therefore, to change the handling of a specific wafer handling robot from one wafer size to a different wafer size, it is usually necessary to replace the wafer handling end effector for one wafer size with one for the other. This is a time-consuming process, requiring the removal of the wafer handling end effector for one wafer size from the wafer handling robot, installation of the wafer handling end effector for the other wafer size, and then training the wafer handling robot to operate correctly with the different wafer size end effector. Thus, there is a need for improved wafer handling end effectors, probe systems that include improved wafer handling end effectors, and / or methods that utilize improved wafer handling end effectors. [Overview of the project]

[0007] This specification discloses a wafer handling end effector, a probe system including a wafer handling end effector, and a method of utilizing the wafer handling end effector. The wafer handling end effector is configured to selectively lift a wafer from the top surface of the wafer via pressure and comprises a blade, a surface extension, and a mounting mechanism. The blade defines a blade side facing the wafer and comprises a gas distribution manifold in fluid communication with the wafer-facing blade side. The surface extension defines a wafer-facing extension side that extends away from the blade. The surface extension extends at least partially around the wafer-facing blade side and comprises at least three protruding regions that project from the wafer-facing extension surface. The at least three protruding regions are configured to physically contact the top surface of the wafer when the end effector selectively lifts the wafer. The mounting mechanism is configured to selectively attach the surface extension to the blade and selectively detach the surface extension from the blade.

[0008] The probe system is configured for testing wafers containing integrated circuit devices and comprises a chuck, a signal generation and signal analysis assembly, a probe assembly, a wafer handling robot, and a pressurized gas source. The chuck defines a support surface configured to support the wafer, and the signal generation and signal analysis assembly is configured to generate a test signal and receive the resulting signal. The probe assembly is configured to receive the test signal from the signal generation and signal analysis assembly, provide that test signal to the integrated circuit device, and / or receive a result signal from the integrated circuit device and provide the result signal to the signal generation and signal analysis assembly. The wafer handling robot is configured to position the wafer within the probe system, and the pressurized gas source is configured to selectively supply a pressurized gas flow to a gas distribution manifold to generate pressure to selectively lift the wafer.

[0009] The method includes separating a first surface extension from the blade of a wafer handling end effector, along with the surface area of ​​the extension facing the first wafer, defining the side of the extension facing the first wafer. The method also includes attaching a second surface extension to the blade of the wafer handling end effector, along with the surface area of ​​the extension facing the second wafer, which is different from the surface area of ​​the extension facing the first wafer, defining the side of the extension facing the second wafer. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram showing an example of a probe system including a wafer handling end effector related to this disclosure. [Figure 2] This is a schematic side view showing an example of a wafer handling end effector related to this disclosure. [Figure 3] This is a schematic top view showing an example of a wafer handling end effector related to this disclosure. [Figure 4] This is a schematic side view showing an example of a wafer handling end effector related to this disclosure. [Figure 5] This is a schematic top view showing an example of a wafer handling end effector related to this disclosure. [Figure 6] This is a schematic cross-sectional view showing an example of a wafer handling end effector related to this disclosure. [Figure 7] This flowchart shows an example of how to use the wafer handling end effector related to this disclosure. [Modes for carrying out the invention]

[0011] Figures 1–7 show examples of probe systems 10, wafer handling end effectors 100, and / or methods 300 relating to the present disclosure. In each of Figures 1–7, elements that serve similar or at least substantially similar purposes are given the same number, and these elements may not be described in detail herein with reference to each of Figures 1–7. Similarly, not all elements in each of Figures 1–7 are numbered, but for consistency, associated reference numbers may be used herein. Elements, components, and / or features described herein with reference to one or more of Figures 1–7 are included in and / or utilized in any of Figures 1–7 without departing from the scope of the present disclosure.

[0012] Generally, elements that may be included in a particular embodiment are shown with solid lines, and optional elements may be shown with dashed lines. However, elements shown with solid lines are not required in all embodiments and may be omitted in some embodiments without departing from the scope of this disclosure.

[0013] Figure 1 is a schematic diagram showing an example of a probe system 10 including a wafer handling end effector 100 according to the present disclosure. As shown by the solid lines in Figure 1, the probe system 10 includes a chuck 20, a signal generation and signal analysis assembly 30, a probe assembly 40, and a wafer handling robot 50.

[0014] The chuck 20 may define a support surface 22 configured to support the wafer 74. Examples of the chuck 20 include a shielded chuck, an electrically shielded chuck, a vacuum chuck, and / or a temperature-controlled chuck. Examples of the wafer 74 include a semiconductor wafer, a silicon wafer, a type III-V semiconductor wafer, and / or any suitable substrate on which an integrated circuit device 75 may be formed and / or defined.

[0015] The signal generation and analysis assembly 30 may be configured to generate a test signal 32 and / or receive a result signal 34. Examples of the signal generation and analysis assembly 30 include a test signal generator, a function generator, an electrical signal generator, an optical signal generator, a result signal receiver, a result signal analyzer, an electrical signal detector, an electrical signal analyzer, a photodetector, and / or an optical signal analyzer.

[0016] The probe assembly 40 may be configured to receive a test signal 32 from the signal generation and signal analysis assembly 30 and to supply the test signal to the integrated circuit device 75 on the wafer 74. In addition, or alternatively, the probe assembly 40 may be configured to receive a result signal 34 from the integrated circuit device 75 and to supply the result signal to the signal generation and signal analysis assembly 30. The integrated circuit device 75 may manufacture and / or generate the result signal in at least partially in response to the reception of the test signal.

[0017] In some examples of the probe system 10, the probe assembly 40 may receive both the test signal 32 and the result signal 34. In other examples of the probe system 10, the probe assembly 40 may receive either the test signal 32 or the result signal 34, and the other of the test signal 32 or the result signal 34 may be transmitted to the signal generation and signal analysis assembly 30 via another structure such as a chuck 20. The probe assembly 40 may include one or more probes 42, such as an electrical probe, a contact probe, an electromagnetic probe, an optical probe, and / or a non-contact probe.

[0018] The wafer handling robot 50 is configured to position the wafer 74 within the probe system 10 and includes a wafer handling end effector 100. Examples of the wafer handling robot 50 include a robotic arm, motors, servo motors, stepping motors, and / or motor controllers. An example of the wafer handling end effector 100 (also referred to herein as the end effector 100) is described in more detail herein.

[0019] As shown by the dashed line in FIG. 1, the probe system 10 may include a wafer cassette docking port 70. The wafer cassette docking port 70 may be configured to receive a wafer cassette 72 that may contain, house, and / or store a plurality of wafers 74. As an example of the wafer cassette docking port 70, any suitable port, surface, actuator, and / or receptacle that may be shaped, sized, and / or designed to receive, detect the presence of, and / or support a wafer cassette 72 may be included. As an example of the wafer cassette 72, a suitable container and / or housing sized and / or configured to surround and / or house the wafers 74 may be included.

[0020] As shown by the dashed line in FIG. 1, the probe system 10 may include a pressurized gas source 60. The pressurized gas source 60 may be configured to supply or selectively supply a pressurized gas stream 62 to an end effector 100, such as, for example, a gas distribution manifold 150 of the end effector. The pressurized gas source 60 generates a pressure that may be utilized to selectively lift the wafer 74 using the end effector. Examples of the pressurized gas source 60 may include a pressurized gas tank, a compressor, and / or a blower. Examples of the pressurized gas stream 62 may include an air stream, a dry air stream, and / or an inert gas stream.

[0021] As shown in FIG. 1, the support surface 22 of the chuck 20 is generally upward facing and supports the wafer 74 such that the upper surface 76 of the wafer 74 is also upward facing. With this in mind, as will be described in more detail herein, the end effector side 104 of the end effector 100 facing the wafer is generally downward facing, faces the support surface 22, and / or faces the upper surface 76 of the wafer 74, at least when the end effector selectively lifts the wafer.

[0022] During the operation of the probe system 10, the wafer handling robot 50 may be configured to take a wafer 74 from the wafer cassette 72 and place the wafer on the support surface 22 of the chuck 20. This includes positioning an end effector 100 above the wafer 74 in the wafer cassette 72 and supplying a pressurized gas flow 62 to the gas distribution manifold 150 to generate pressure. This allows the end effector to selectively lift and / or attach the wafer, thereby coupling the wafer to the end effector and allowing it to move with the end effector. While the pressurized gas flow is supplied to the gas distribution manifold, the wafer handling robot 50 may transport the wafer above the support surface 22 and then release the wafer from the end effector by stopping the flow of the pressurized gas flow. The probe system 10 may then test the operation of one or more integrated circuit devices 75 on the wafer 74, for example, by providing a test signal 32 to the integrated circuit devices and / or receiving a result signal 34 from the integrated circuit devices. Following the testing of one or more integrated circuit devices, the wafer handling robot 50 may transfer the wafer 74 from the support surface 22 of the chuck 20 to the wafer cassette 72. This process may be repeated any appropriate number of times to test the operation of any appropriate number of wafers from the wafer cassette 72. With the above in mind, the size and / or shape of the end effector 100 may be determined to fit within the wafer cassette 72, for example, to fit the gap between two adjacent wafers placed within the wafer cassette.

[0023] The wafer handling end effector 100 is configured to generate pressure by flowing a pressurized gas stream 62 between the wafer handling end effector and the wafer and / or lift the wafer 74, thereby generating a low pressure region between the end effector and the wafer. This phenomenon can be explained by the Bernoulli effect and / or the cyclone effect. As described above, the probe system 10 may desirably be utilized with wafers 74 of various sizes or diameters. However, as also described above, conventional wafer handling end effectors configured to lift the wafer from the upper surface of the wafer may not be able to reliably lift wafers of multiple sizes, as described herein with reference to FIG. 1.

[0024] With the above in mind, FIGS. 2-6 illustrate an example of a wafer handling end effector 100 that may be utilized in the probe system 10 according to the present disclosure. The wafer handling end effector 100 of FIGS. 2-6 may include and / or be a more detailed view of the wafer handling end effector 100 shown in FIG. 1. With this in mind, any of the structures, functions, and / or features disclosed herein with respect to the wafer handling end effector 100 of FIGS. 2-6 may be included in and / or utilized in conjunction with the wafer handling end effector 100 and / or the probe system 10 of FIG. 1 without departing from the scope of the present disclosure. Similarly, any of the structures, functions, and / or features disclosed herein with respect to the wafer handling end effector 100 and / or the probe system 10 of FIG. 1 may be included in and / or utilized in conjunction with the wafer handling end effector 100 of FIGS. 2-6 without departing from the scope of the present disclosure.

[0025] As shown comprehensively in Figures 2-6, the end effector 100 includes a blade 120, a surface extension 200, and a mounting mechanism 260. The blade 120 defines a blade side 122 facing the wafer and includes a gas distribution manifold 150 that is in fluid communication with the blade side 122 facing the wafer. The surface extension 200 defines a wafer-facing extension side 210 that extends away from the blade 120. As shown, the surface extension 200 includes at least three protruding regions 240 that at least partially extend around the blade side 122 facing the wafer and protrude from the wafer-facing extension side 210. As shown in Figure 6, the protruding regions 240 may be configured to physically contact the upper surface 76 of the wafer 74 when the end effector selectively lifts the wafer. As will be described in more detail herein, the mounting mechanism 260 is configured to allow and / or facilitate selective attachment of the surface extension portion 200 to the blade 120 and selective separation of the surface extension portion 200 from the blade 120.

[0026] The mounting mechanism 260 is configured to selectively attach the surface extension portion 200 to the blade 120 or selectively separate the surface extension portion 200 from the blade 120. Therefore, the end effector 100 can accommodate a variety of different wafer sizes, i.e., diameters, which is not possible with conventional wafer handling end effectors that lift wafers from the top surface of the wafer. For example, the first surface extension portion 201 shown in Figures 2-3 may be configured to lift relatively small wafers such as 200 mm wafers, and the second surface extension portion 202 shown in Figures 4-5 may be configured to lift relatively large wafers such as 300 mm wafers. With this in mind, a method of using the wafer handling end effector may include separating the first surface extension portion 201 from the blade 120 and attaching the second surface extension portion 202 to the blade 120, thereby transitioning the wafer handling end effector from the configuration shown in Figures 2-3 to the configuration shown in Figures 4-5. The first surface extension portion may define the extension portion side 210 facing the first wafer together with the surface area of ​​the extension portion facing the first wafer, and the second surface extension portion may define the extension portion side 210 facing the second wafer together with the surface area of ​​the extension portion facing the second wafer. The surface area of ​​the extension portion facing the second wafer may be different from the surface area of ​​the extension portion facing the first wafer. In particular, in the example of Figures 2-5, the surface area of ​​the extension portion facing the second wafer may be larger than the surface area of ​​the extension portion facing the first wafer. As a result, the end effector 100 configured as shown in Figures 4-5 can lift wafers of a larger diameter compared to the end effector configured as shown in Figures 2-3.

[0027] As an example, referring to Figures 2, 4, and 6, the blade side 122 facing the wafer may define an overlapping region 124 between the blade and the wafer, and the extension side 210 facing the wafer may define an overlapping region 212 between the extension and the wafer. The overlapping region 124 between the blade and the wafer and the overlapping region 212 between the extension and the wafer may together define an overall overlapping region 102 of the end effector 100, which may be configured to face and overlap the top surface 76 of the wafer 74 when the end effector selectively lifts the wafer. In order to reliably generate pressure and thereby enable reliable lifting of the wafer by the end effector, the size or area of ​​the entire overlapping region 102 must correspond to, be based on, and / or proportional to the size, diameter, or area of ​​the top surface 76 of the wafer 74. As shown by the transition between the configurations in Figures 2-3 and 4-5, the blade 120 can accommodate surface extensions 200 of various sizes, so that the overall size or area of ​​the overlapping region 102 can be adjusted as needed and / or based on the size of the wafer 74, thereby enabling and / or facilitating the lifting of wafers of corresponding different sizes or diameters by the end effector 100.

[0028] The end effector 100 according to this disclosure may offer additional and / or alternative advantages compared to conventional wafer handling end effectors configured to lift wafers from the top surface. For example, adapting a conventional wafer handling robot using an end effector configured to lift wafers from the top surface to a different wafer size typically requires completely removing the conventional end effector and replacing it with a different conventional end effector. As mentioned above, this process requires reteaching the conventional wafer handling robot for the new end effector, significantly increasing the cost and / or downtime associated with the removal and replacement of the conventional end effector. In contrast to conventional end effectors, the wafer handling end effector 100 according to this disclosure comprises a blade 120 and individually detachable surface extensions 200. Adapting the end effector 100 to a different wafer size only requires attaching the appropriate surface extensions 200 to the blade 120. The blade 120 is never removed or detached from the wafer handling robot. Therefore, even when attaching different surface extension sections 200 to the blade 120, there is no need to re-teach the wafer handling robot, reducing the costs and downtime associated with the change.

[0029] The blade 120 may include any suitable structure that can be adapted, configured, designed, sized, and / or constructed to define the blade side 122 facing the wafer, include a gas distribution manifold 150, and / or be operably mounted to the surface extension 200 via a mounting mechanism 260. As shown in Figures 2-5, the blade 120 may include a blade mounting mechanism 134. The blade mounting mechanism 134 may be configured to facilitate operable mounting of the blade 120 to a wafer handling robot. Examples of the blade mounting mechanism 134 include any suitable hole, receptacle, clamp, fastener, and / or hemispherical pan mechanism 135. The hemispherical pan mechanism may include at least a partially hemispherical recess, as best shown in Figures 2 and 4.

[0030] The blade 120 includes and / or may be an elongated blade 120 that defines a longitudinal axis 136. The longitudinal axis 136 may extend from the blade mounting mechanism 134 into and / or through the overlapping region 124 between the blade and the wafer.

[0031] The blade 120 also includes and / or defines an extension receiving region 138, and the surface extension 200 may surround and / or enclose the extension receiving region 138 in a plane extending at least parallel to the blade side 122 facing the wafer. The extension receiving region 138 may have any suitable shape and / or define such suitable shape. For example, the extension receiving region 138 may be an arc-shaped extension receiving region, an extension receiving region that is at least partially circular, an extension receiving region that is polygonal, and / or an extension receiving region that is at least partially U-shaped.

[0032] The blade 120 may have a blade side 122 facing the wafer, as well as a blade side 128 and / or blade edge 130 opposite the wafer, which may extend between the wafer-facing blade side 122 and the wafer-opposite blade side 128. The blade edge 130 may form and / or define an extension receiving region 138 of the blade 120. The wafer-facing blade side 122 may be planar, or at least substantially planar, the wafer-facing blade side. Similarly, the wafer-opposite blade side 128 may also be planar, or at least substantially planar, the wafer-opposite blade side. Such a configuration may enable and / or facilitate the lifting of the wafer by the end effector 100 and / or insertion of the end effector into the wafer cassette, as will be described in more detail herein.

[0033] As shown in Figures 2, 3, and 6, the blade 120 may define a blade thickness 132, or average blade thickness 132. Examples of blade thicknesses 132 include 0.5 mm or more, 0.75 mm or more, 1 mm or more, 1.25 mm or more, 1.5 mm or more, 1.75 mm or more, 2 mm or more, 2.5 mm or more, 3 mm or more, 3.5 mm or more, or 4 mm or more, 8 mm or less, 7 mm or less, 6 mm or less, 5 mm or less, 4.5 mm or less, 4 mm or less, 3.5 mm or less, 3 mm or less, 2.5 mm or less, and / or 2 mm or less.

[0034] The blade 120 and the surface extension 200 may be formed from and / or defined from any suitable material(s). The blade 120 is defined by the blade material, and the surface extension 200 is defined by the extension material. In some examples, the blade material may be identical or similar to the extension material. In some examples, the extension material may be different from the blade material. In specific examples, the blade material may include and / or be a metal blade material, and the extension material may include and / or be a polymer extension material. Examples of polymer extension materials include polyetheretherketone, polyimide, and / or polyamide. The polymer extension material may enable and / or facilitate the elastic deformation of the surface extension 200 when attaching the surface extension to the blade and / or when separating the surface extension from the blade. However, it is within the scope of this disclosure that the blade material and / or extension material may be defined by metal, polymer, ceramic, and / or one or more other materials.

[0035] The gas distribution manifold 150 may include any suitable structure that is at least partially formed and / or defined within and / or by the blade 120 and / or provides fluid communication with the blade side 122 of the blade 120 facing the wafer. As an example, the gas distribution manifold 150 may include a plurality of openings 152 that may be defined within the blade side facing the wafer, as best shown in Figures 2, 4, and 6.

[0036] In some examples, and perhaps best illustrated in Figures 2 and 4, the openings 152 may be arranged in multiple concentric circles. In some examples, the multiple concentric circles may include three, or optionally more than three, concentric circles. When the openings 152 are arranged in multiple concentric circles, corresponding subsets of the multiple openings may be located within and / or define each concentric circle of the multiple concentric circles.

[0037] As best illustrated in Figure 6, the blade side 122 facing the wafer may define a blade-side normal direction 126 facing the wafer. Furthermore, each opening 152 extends from a plurality of corresponding fluid conduits 154, which may define a corresponding fluid flow axis 156 through which a pressurized gas flow 62 flows and / or to the blade side 122 facing the wafer. Each corresponding fluid flow axis 156 may be oriented at a corresponding flow angle 158 with respect to the blade-side normal direction 126 facing the wafer. Examples of flow angles 158 include at least 30 degrees, at least 35 degrees, at least 40 degrees, at least 45 degrees, at least 50 degrees, at least 55 degrees, at least 60 degrees, up to 80 degrees, up to 75 degrees, up to 70 degrees, up to 65 degrees, and / or up to 60 degrees.

[0038] If the openings 152 are arranged concentrically and the corresponding fluid flow axes 156 are oriented at a flow angle 158, then the corresponding fluid flow axes of each fluid conduit within a given concentric circle may extend along at least partially a conical plane. In other words, the fluid flow axes 156 of all fluid conduits 154 within a given concentric circle may intersect at a common point and extend symmetrically and / or conically from that common point.

[0039] As best illustrated in Figures 2 and 4, the blade 120 may include an opening 170 for a wafer presence sensor. The opening for the wafer presence sensor may be defined within an overlapping region 124 between the blade and the wafer. In other words, when the end effector selectively lifts the wafer, the wafer may extend across the opening 170 for the wafer presence sensor. As best illustrated in Figures 3 and 5, the wafer presence sensor 172 may be located in and / or near at least a portion of the opening 170 for the wafer presence sensor and configured to detect when the wafer crosses the opening for the wafer presence sensor and / or to detect the presence of the wafer through the opening for the wafer presence sensor. In other words, the wafer presence sensor may be configured to detect the wafer when the end effector selectively lifts the wafer. Examples of wafer presence sensors include optical sensors and / or capacitive sensors.

[0040] The surface extension 200 may include any suitable structure that defines the wafer-facing extension side 210 and / or includes at least three protruding regions 240. In some examples, the wafer-facing extension side 210 may include a planar or at least substantially planar wafer-facing extension side and / or be planar or at least substantially planar. In some examples, if the surface extension is operably mounted to the blade via a mounting mechanism, the wafer-facing extension side may extend parallel to or coplanar with the wafer-facing blade side 122.

[0041] The surface elongation portion 200 may define an elongation portion side 214 opposite to the wafer, and an elongation edge 216 extending between the wafer-facing elongation portion side 210 and the wafer-opposite elongation portion side 214. The wafer-opposite elongation portion side 214 may include a planar or at least substantially planar wafer-opposite elongation portion side 214, and / or be a planar or at least substantially planar wafer-opposite elongation portion side 214, and / or extend parallel to, or at least substantially parallel to, the wafer-facing elongation portion side 210.

[0042] As shown in Figures 2, 4, and 6, the surface elongation 200 may define the elongation thickness or average elongation thickness 218. The elongation thickness 218 may be measured between the elongation side 210 facing the wafer and the elongation side 214 opposite the wafer. The elongation thickness 218 may be equivalent to or similar to the blade thickness 132. Examples of ratios of elongation thickness 218 to blade thickness 132 include at least 0.5, at least 0.6, at least 0.7, at least 0.8, at least 0.9, at least 1, up to 2, up to 1.8, up to 1.6, up to 1.4, up to 1.2, up to 1, and / or 1.

[0043] The surface extension 200 defines a blade receiving region 220, and the blade 120 may extend into the blade receiving region when at least the surface extension is operably attached to the blade via the mounting mechanism 260. The blade receiving region may be shaped such that the extended edge 216 of the surface extension 200 receives the extension receiving region 138 of the blade 120. In this regard, the shape of the blade receiving region 220 may match or complement the shape of the extension receiving region 138. Examples of blade receiving region shapes include a curved blade receiving region, a blade receiving region that is at least partially circular, and / or a blade receiving region that is at least partially U-shaped.

[0044] The protruding regions 240 may include any suitable structure and / or shape that can protrude from the wafer-facing extension side 210, protrude toward the wafer when the end effector selectively lifts the wafer, and / or be configured to physically contact the upper surface of the wafer when the end effector selectively lifts the wafer. The surface extension 200 may include any suitable number of protruding regions 240, including three, four, five, or six protruding regions. As shown in Figures 2 and 4, the protruding regions 240 may be arranged symmetrically around the longitudinal axis 136 of the blade 120.

[0045] The protruding region 240 may be configured to physically contact the upper surface of the wafer in any suitable manner. For example, as best shown in Figures 1, 3, and 5, the protruding region 240 may be configured to physically contact the upper surface 76 of the wafer 74 within the edge exclusion region 78 of the wafer 74. As used herein, the term “edge exclusion region” includes and / or may be an annular region within a threshold exclusion distance 79 from the outer edge of the wafer, and / or a region where no integrated circuit device 75 is present. Examples of threshold exclusion distances include up to 2 mm, up to 3 mm, up to 4 mm, or up to 5 mm.

[0046] If the end effector 100 includes a protruding region 240 configured to contact the upper surface 76 of the wafer 74 within an edge exclusion region 78, the ability of the end effector 100 to utilize different surface extensions 200 and / or to swap one surface extension 200 with another may offer further advantages compared to conventional wafer handling end effectors configured to selectively lift the corresponding wafer from its upper surface. As an example, as best illustrated by a comparison between Figures 3 and 5, the position of the protruding region 240 may vary or be selected such that, with respect to a given surface extension 200, the corresponding protruding region 240 contacts the corresponding wafer size or wafer diameter within the corresponding edge exclusion region 78 of that wafer size.

[0047] As an example, the protruding region 240 may be located at least partially or completely within an annular region corresponding to the shape of the corresponding edge exclusion region. In addition, or alternatively, the protruding region 240 may extend only within the region radially outward from the inner circumference of the edge of the corresponding edge exclusion region. Thus, as illustrated, the size and / or diameter of this annular region may vary based on the size and / or diameter of the wafer in which a given surface extension is configured to be lifted.

[0048] As best illustrated in Figure 6, the protruding region 240 protrudes by a protrusion distance 242 from the wafer-facing extension side 210 of the surface extension 200. The end effector 100 utilizes the positive pressure airflow from the gas distribution manifold 150 to generate the pressure to lift the wafer, so that the wafer is naturally suspended, or floats, from the end effector by a levitation distance. This levitation distance is defined by various parameters, including the surface area of ​​the entire overlapping region 102, the weight of the wafer, and the flow rate of the positive pressure airflow (i.e., pressurized gas flow 62). In other words, the end effector 100 may be configured to lift the wafer 74 without direct physical contact between the wafer-facing blade side 122 and the wafer, and / or without direct physical contact between the wafer-facing extension side 210 and the wafer.

[0049] Taking this into consideration, the protrusion distance 242 may be selected to be greater than this levitation distance. In this way, the pressure causes the wafer to come into contact with the protrusion region 240, and a static frictional force is generated between the protrusion end 244 of the protrusion region and the wafer. This static frictional force resists the sliding motion between the end effector and the wafer, holding the wafer on the end effector as the end effector moves within the probe system. Examples of protrusion distances 242 include 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, 0.7 mm or more, 0.8 mm or more, 0.9 mm or more, 1 mm or more, 1.5 mm or less, 1.4 mm or less, 1.3 mm or less, 1.2 mm or less, 1.1 mm or less, 1 mm or less, 0.9 mm or less, 0.8 mm or less, 0.7 mm or less, 0.6 mm or less, and / or 0.5 mm or less.

[0050] The multiple protruding ends 244 of the protruding region 240 may have and / or be defined any suitable shape and / or relative orientation. For example, the multiple protruding ends 244 may be planar, or at least substantially planar. For another example, the protruding ends of each protruding region 240 may be coplanar, or at least substantially coplanar, with the protruding ends of each other protruding region 240, and / or parallel, or at least substantially parallel, to the extension side 210 facing the wafer.

[0051] As described above, the end effector 100 may be configured to utilize different surface extensions 200 of different sizes and / or shapes to facilitate the lifting of wafers of different shapes, sizes, and / or diameters. With this in mind, in some examples, the end effector 100 may include a plurality of surface extensions 200, each surface extension 200 may be configured to be individually and selectively attached to and / or separated from the blade 120 or a single blade 120. For example, the plurality of surface extensions 200 may include a first surface extension 201 shown in Figure 2 and a second surface extension 202 shown in Figure 4. In other words, the end effector 100 may include a first surface extension, such as the surface extension 200 shown in Figure 2, and a second surface extension, such as the surface extension 200 shown in Figure 4. It is within the scope of this disclosure that the end effector 100 may include additional surface extensions, such as three, four, five, or six or more surface extensions, each of which may be configured to be individually and selectively attached to and / or separated from the blade 120, such as lifting wafers of three, four, five, or six or more sizes and / or diameters.

[0052] In such a configuration, the mounting mechanism 260 may be configured to enable and / or facilitate the selective mounting and / or detachment of the first surface extension or the second surface extension at a predetermined time. However, the end effector does not have to be configured to use both the first and second surface extensions simultaneously.

[0053] The first surface extension may define the shape of the first surface extension, and the second surface extension may define a shape of the second surface extension that is different from the shape of the first surface extension. For example, the first surface extension may be sized, shaped, and / or configured to lift a first wafer having a first diameter, such as 200 mm, and the second surface extension may be sized, shaped, and / or configured to lift a second wafer having a second diameter, such as 300 mm.

[0054] As described above, the protruding region 240 may be configured to physically contact the upper surface of the wafer within the wafer edge exclusion region. With this in mind, the first surface extension portion may include at least three first protruding regions, and the second surface extension portion may include at least three second protruding regions, and the relative orientation of the at least three first protruding regions may differ from the relative orientation of the at least three second protruding regions. For example, the relative orientation of the at least three first protruding regions may be set so that they contact a 200 mm wafer within the 200 mm wafer edge exclusion region to which the at least three first protruding regions correspond, and the relative orientation of the at least three second protruding regions may be set so that they contact a 300 mm wafer within the 300 mm wafer edge exclusion region to which the at least three second protruding regions correspond.

[0055] In other words, at least three first protruding regions may be positioned to contact an annular surface having an outer diameter of 200 mm and a width defined by the threshold exclusion region distance. On the other hand, at least three second protruding regions may be positioned to contact an annular surface having an outer diameter of 300 mm and a width defined by the threshold exclusion region distance. While wafers with outer diameters of 200 mm and 300 mm are given as examples herein, it is within the scope of this disclosure that the end effector 100 may be configured to lift wafers of other diameters, and / or that at least three protruding regions 240 may be configured to contact the corresponding edge exclusion regions of wafers of other diameters. Examples of such other diameters include diameters or nominal diameters of 25 mm, 50 mm, 75 mm, 100 mm, 125 mm, 150 mm, 200 mm, 300 mm, and / or 450 mm.

[0056] The mounting mechanism 260 may include any suitable structure that can be adapted, configured, designed, molded, sized, and / or constructed to enable and / or facilitate the selective attachment of the surface extension 200 to the blade 120 and the selective separation of the surface extension from the blade. Examples of the mounting mechanism 260 include fasteners, levers, cams, keyed areas, protruding areas, recessed areas, friction fittings, elastic fittings, adhesive connections, magnetic connections, vacuum connections, and / or electrostatic connections.

[0057] The entire overlapping region 102 can define an entire overlapping surface area that can be a threshold overlap ratio of the wafer surface area of ​​the upper surface of the wafer. In other words, the end effector 100 may overlap with the threshold overlap ratio of the upper surface of the wafer. Examples of threshold overlap ratios include at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, up to 95%, up to 92.5%, up to 90%, up to 87.5%, up to 85%, up to 82.5%, and / or up to 80%. The threshold overlapping surface area and / or threshold overlap ratio may be selected to provide a desired perpendicular force between the protruding region 240 and the upper surface of the wafer when the end effector selectively lifts the wafer. For example, the threshold overlapping surface area and / or threshold overlap ratio may be increased to increase the normal force and / or decreased to decrease the normal force.

[0058] The blade-wafer overlap area 124 has and / or may be defined as a blade-wafer overlap area that is a threshold blade overlap area ratio of the entire overlap area. Examples of threshold blade overlap area ratios include at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, up to 95%, up to 90%, up to 85%, up to 80%, up to 75%, up to 70%, up to 65%, up to 60%, up to 55%, up to 50%, up to 45%, and / or up to 40%. The threshold blade overlap area ratio may vary depending on the size of the surface extension 200.

[0059] Figure 7 is a flowchart illustrating an example of a method 300 for selectively lifting a wafer from its top surface and / or by pressure using a wafer handling end effector according to the present disclosure. Method 300 includes, in step 310, positioning a first wafer using an end effector, and in step 320, separating a first surface elongation. Method 300 also includes, in step 330, attaching a second surface elongation, and in step 340, positioning a second wafer using an end effector.

[0060] In step 320, the separation step may include separating the first surface extension from the blade of the end effector. Examples of the first surface extension and blade are disclosed herein. The first surface extension may define the extension side facing the first wafer, along with the surface area of ​​the extension facing the first wafer. In some examples, in step 320, the separation step includes a step of elastically deforming the first surface extension.

[0061] In step 330, the mounting step may include attaching the second surface extension to the blade of the end effector. An example of the second surface extension is disclosed herein. The second surface extension may define the extension side facing the second wafer, along with the surface area of ​​the extension facing the second wafer. The surface area of ​​the extension facing the second wafer may be different from, smaller than, and / or larger than the surface area of ​​the extension facing the first wafer. In some examples, in step 330, the mounting step may include a step of elastically deforming the second surface extension. In some examples, in step 330, the mounting step may include mounting using, via, and / or utilizing the mounting mechanism of the end effector, examples of which are disclosed herein.

[0062] It is within the scope of this disclosure that Method 300 may include performing the separation step in step 320 and the mounting step in step 330 with the blade fixed to the wafer handling robot. This may facilitate lifting the wafer and / or utilizing step in step 340 after the mounting step in step 330, without or without prior teaching of the robot.

[0063] The steps used in step 340 may include positioning the first wafer within and / or relative to the probe system using an end effector. The steps used in step 340 may also include positioning the second wafer within and / or relative to the probe system using an end effector. The first wafer may have a first diameter, and the second wafer may have a second diameter different from the first diameter. The steps used in step 310 may be performed before the separation step in step 320, and the steps used in step 340 may be performed after the mounting step in step 330. Thus, the separation step in step 320 and the mounting step in step 330 may be used to adjust and / or adapt the end effector from the first wafer of the first diameter to the second wafer of the second diameter.

[0064] In this specification, the term "and / or" between a first entity and a second entity means (1) the first entity, (2) the second entity, and (3) either the first entity or the second entity. Multiple entities listed with "and / or" should be interpreted similarly, that is, they should be interpreted as "one or more" of the combined entities. Entities other than those specifically identified by the "and / or" clause may exist, whether or not they are related to those specifically identified entities. Thus, as an example without limitation, a reference to "A and / or B," when used in combination with an unrestrictive expression such as "including," may in one embodiment refer to A only (optionally including entities other than B), in another embodiment refer to B only (optionally including entities other than A), and in yet another embodiment refer to both A and B (optionally including other entities). These entities may refer to elements, actions, structures, steps, operations, values, etc.

[0065] In this specification, the phrase “at least one” used with respect to a list of one or more entities should be understood to mean at least one entity selected from any one or more entities in the list of entities, but not necessarily including at least one of all entities specifically listed in the list of entities, nor excluding any combination of entities in the list of entities. This definition also allows for the optional presence of entities other than those specifically identified in the list of entities to which the phrase “at least one” refers, whether or not they are related to those specifically identified entities. Thus, as an example that is not limited, “at least one of A and B” (or, as a synonym, “at least one of A or B,” or as a synonym, “at least one of A and / or B”) may, in one embodiment, refer to at least one A (and optionally including entities other than A) in which B is absent (and optionally including entities other than B). In another embodiment, it may refer to at least one B (and optionally including entities other than A) in which A is absent (and optionally including entities other than A). In yet another embodiment, this refers to at least one A (including one or more of any choice) and at least one B (including one or more of any choice) (and optionally other entities). In other words, the phrases “at least one,” “one or more,” and “and / or” are unrestricted expressions that function as both conjunctions and disjunctive conjunctions. For example, the expressions “at least one of A, B, and C,” “at least one of A, B, or C,” “one or more of A, B, and C,” and “A, B, and / or C” may mean A alone, B alone, C alone, a combination of A and B, a combination of A and C, a combination of B and C, a combination of A, B, and C, and optionally a combination of any of the above with at least one other entity.

[0066] If a patent, patent application, or other reference is incorporated herein by reference and (1) defines a term in a manner that conflicts with any part of this disclosure that is not incorporated, or with any other incorporated reference, and / or (2) otherwise conflicts, the part of this disclosure that is not incorporated shall prevail, and any term contained therein or any incorporated disclosure shall prevail only with respect to the reference in which the term is defined, and / or the reference to which the incorporated disclosure originally existed.

[0067] In this specification, the terms “adapted” and “configured” mean that an element, component, or other subject matter is designed and / or intended to perform a particular function. Therefore, the use of the terms “adapted” and “configured” should not be interpreted as meaning that a particular element, component, or other subject matter is merely “capable” of performing a particular function, but rather that the element, component, and / or subject matter is specifically selected, created, implemented, used, programmed, and / or designed for the purpose of performing that function. Furthermore, an element, component, and / or subject matter described as adapted to perform a particular function may also be described as configured to perform that function, additionally or alternatively, and vice versa.

[0068] In this specification, when the phrases “for example,” “as an example,” and / or simply “example” are used in reference to one or more components, features, details, structures, embodiments, and / or methods relating to this disclosure, they are intended to indicate that the described components, features, details, structures, embodiments, and / or methods are exemplary, non-exclusive examples of the components, features, details, structures, embodiments, and / or methods relating to this disclosure. Accordingly, the described components, features, details, structures, embodiments, and / or methods are not intended to be restrictive, essential, or exclusive / exclusive. Other components, features, details, structures, embodiments, and / or methods, including those that are structurally and / or functionally similar and / or equivalent, are also within the scope of this disclosure.

[0069] In this specification, “at least substantially” may, when modifying a degree or relationship, include not only the “substantial” degree or relationship described, but also the entire range of the degree or relationship described. The substantial amount of the degree or relationship described may include at least 75% of the degree or relationship described. For example, an object formed at least substantially from a certain material includes objects in which at least 75% of the object is formed from that material, as well as objects formed entirely from that material. As another example, a first length that is at least substantially the same length as a second length includes a first length that is no more than 75% of the second length, as well as a first length that is the same length as the second length.

[0070] Exemplary, non-exclusive examples of wafer handling end effectors, probe systems, and methods described herein are shown in the following enumerated paragraphs. Individual steps of the methods described herein, including the paragraphs enumerated below, may be additionally or alternatively referred to as “steps” for performing the actions described herein, and this is within the scope of the disclosure.

[0071] A1 A wafer handling end effector configured to selectively lift a wafer from the top surface of the wafer via pressure, The end effector is, A blade that defines the blade side facing the wafer, the blade including a gas distribution manifold that is in fluid communication with the wafer-facing blade side, A surface extension portion that defines the wafer-facing extension portion side extending away from the blade, wherein the surface extension portion extends at least partially around the wafer-facing blade side, and further includes at least three protruding regions that project from the wafer-facing extension portion side; A mounting mechanism configured to selectively attach the surface extension portion to the blade and to selectively separate the surface extension portion from the blade, Equipped with, Optionally, the blade side facing the wafer defines an overlapping region between the blade and the wafer, and the extension side facing the wafer defines an overlapping region between the extension and the wafer. The overlapping region between the blade and the wafer and the overlapping region between the extension and the wafer together define the entire wafer overlapping region of the end effector. Furthermore, the entire wafer overlapping region is configured to face and overlap the upper surface of the wafer when the end effector selectively lifts the wafer. The at least three protruding regions are optionally configured to physically contact the upper surface of the wafer when the end effector selectively lifts the wafer. End effector.

[0072] A2 The end effector described in paragraph A1, The blade further comprises a blade mounting structure configured to facilitate the operational attachment of the blade to a wafer handling robot.

[0073] A3 An end effector described in any one of paragraphs A1 to A2, The aforementioned blade is an elongated blade that defines the longitudinal axis.

[0074] A4 The end effector described in paragraph A3, The longitudinal axis extends from the blade mounting structure of the blade to the overlapping region between the blade and the wafer.

[0075] A5 An end effector described in any one of paragraphs A1 to A4, The blade includes an extension receiving region, and further, the surface extension extends around the extension receiving region.

[0076] A6 The end effector described in paragraph A5, The extension receiving region is, (i) Arch-shaped extension receiving area (ii) at least partially circular elongation receiving area (iii) At least partially U-shaped extension receiving area (iv) Polygonal extension receiving region It is at least one of the following.

[0077] A7 An end effector described in any one of paragraphs A1 to A6, The blade side facing the wafer is a blade side facing a planar, or at least substantially planar, wafer.

[0078] A8 An end effector described in any one of paragraphs A1 to A7, The blade defines a blade side opposite the wafer, and a blade edge extending between the blade side facing the wafer and the blade side opposite the wafer.

[0079] A9 The end effector described in paragraph A8, The blade side opposite to the wafer is planar, or at least substantially planar, the blade side opposite to the wafer.

[0080] A10 An end effector described in any one of paragraphs A8 to A9, The blade edge defines the extension receiving region of the blade.

[0081] A11 An end effector described in any one of paragraphs A8 to A10, The blade defines a blade thickness, or average blade thickness, between the blade side facing the wafer and the blade side opposite the wafer.

[0082] A12 The end effector described in paragraph A11, The blade thickness is at least one of the following: (i) 0.5 mm or larger, 0.75 mm or larger, 1 mm or larger, 1.25 mm or larger, 1.5 mm or larger, 1.75 mm or larger, 2 mm or larger, 2.5 mm or larger, 3 mm or larger, 3.5 mm or larger, or 4 mm or larger. (ii) 8 mm or less, 7 mm or less, 6 mm or less, 5 mm or less, 4.5 mm or less, 4 mm or less, 3.5 mm or less, 3 mm or less, 2.5 mm or less, and / or 2 mm or less;

[0083] A13 An end effector described in any one of paragraphs A1 to A12, The aforementioned blade is defined by the blade material, The surface elongation portion is defined by the elongation material. Optionally, the stretching material is the same as the blade material. The stretching material may be optionally different from the blade material.

[0084] A14 The end effector described in paragraph A13, The blade material is at least one of a metal blade material, a polymer blade material, and a ceramic blade material.

[0085] A15 An end effector described in any one of paragraphs A13 to A14, The stretchable material is at least one of a metal stretchable material, a polymer stretchable material, and a ceramic stretchable material.

[0086] A16 An end effector described in any one of paragraphs A1 to A15, The gas distribution manifold includes a plurality of openings defined within the blade side facing the wafer.

[0087] A17 The end effector described in paragraph A16, The aforementioned multiple openings are arranged in a concentric pattern.

[0088] A18 The end effector described in paragraph A17, The aforementioned plurality of concentric circles include at least three concentric circles.

[0089] A19 An end effector described in any one of paragraphs A17 to A18, The corresponding subsets of the aforementioned multiple openings are located within each of the multiple concentric circles.

[0090] A20 An end effector described in any one of paragraphs A16 to A19, The blade side facing the wafer defines the blade side normal direction facing the wafer, The aforementioned multiple openings extend from a plurality of corresponding fluid conduits, Each of the aforementioned plurality of corresponding fluid conduits defines a corresponding fluid flow axis, Furthermore, the corresponding fluid flow axis of each of the fluid conduits is oriented at a flow angle corresponding to the blade-side normal direction facing the wafer.

[0091] A21 The end effector described in paragraph A20, The corresponding flow angle is at least one of the following: (i) 30 degrees or higher, 35 degrees or higher, 40 degrees or higher, 45 degrees or higher, 50 degrees or higher, 55 degrees or higher, or 60 degrees or higher. (ii) 80 degrees or less, 75 degrees or less, 70 degrees or less, 65 degrees or less, or 60 degrees or less.

[0092] A22 An end effector described in any one of paragraphs A20 to A21, The aforementioned multiple openings are arranged in multiple concentric circles, Furthermore, the corresponding flow angles of the fluid conduits at each opening within a predetermined concentric circle among the plurality of concentric circles extend at least partially along the conical surface.

[0093] A23 An end effector described in any one of paragraphs A16 to A22, The gas distribution manifold is configured to supply a pressurized gas flow to the blade side facing the wafer through a plurality of openings.

[0094] A24 An end effector described in any one of paragraphs A1 to A23, The gas distribution manifold is configured such that the wafer handling end effector selectively lifts the wafer via at least one of the Bernoulli effect and the cyclone effect.

[0095] A25 An end effector described in any one of paragraphs A1 to A24, The blade further comprises an opening for a wafer presence sensor defined within the overlapping region between the blade and the wafer.

[0096] A26 The end effector described in paragraph A25, The end effector further includes a wafer presence sensor configured to detect the wafer when the end effector selectively lifts the wafer.

[0097] A27 An end effector described in any one of paragraphs A1 to A26, The extended portion facing the wafer is coplanar, or at least substantially coplanar, with the blade side facing the wafer.

[0098] A28 An end effector described in any one of paragraphs A1 to A27, The extended portion facing the wafer is the extended portion facing the flat wafer.

[0099] A29 An end effector described in any one of paragraphs A1 to A28, The extended portion facing the wafer extends parallel to, or at least substantially parallel to, the blade portion facing the wafer.

[0100] A30 An end effector described in any one of paragraphs A1 to A29, The aforementioned surface elongation portion defines an elongation portion side opposite to the wafer, and an elongation edge extending between the elongation portion side facing the wafer and the elongation portion side opposite to the wafer.

[0101] A31 The end effector described in paragraph A30, The elongated side opposite the wafer is planar, or at least substantially planar, the elongated side opposite the wafer.

[0102] A32 An end effector described in any one of paragraphs A30 to A31, The surface elongation portion defines the elongation thickness between the elongation side facing the wafer and the elongation side opposite the wafer, or the average elongation thickness.

[0103] A33 The end effector described in paragraph A32, The ratio of the thickness of the extended portion to the blade thickness of the blade is at least one of the following: (i) 0.5 or higher, 0.6 or higher, 0.7 or higher, 0.8 or higher, 0.9 or higher, or 1 or higher. (ii) 2 or less, 1.8 or less, 1.6 or less, 1.4 or less, 1.2 or less, or 1 or less.

[0104] A34 An end effector described in any one of paragraphs A1 to A33, The surface extension defines a blade receiving region, and furthermore, the blade extends within the blade receiving region.

[0105] A35 The end effector described in paragraph A34, The blade-receiving region is at least one of the following: (i) An arc-shaped blade receiving area. (ii) A blade receiving area that is at least partially circular. (iii) A blade receiving area that is at least partially U-shaped.

[0106] A36 An end effector described in any one of paragraphs A34 to A35, The blade receiving area is shaped to accommodate the blade's extension receiving area.

[0107] A37 An end effector described in any one of paragraphs A34 to A36, The blade receiving region is defined by the elongated edge of the surface elongation portion.

[0108] A38 An end effector described in any one of paragraphs A1 to A37, The aforementioned at least three protruding regions include three, four, five, or six protruding regions.

[0109] A39 An end effector described in any one of paragraphs A1 to A38, When the end effector selectively lifts the wafer, at least three protruding regions protrude toward the wafer.

[0110] A40 An end effector described in any one of paragraphs A1 to A39, The at least three protruding regions are arranged symmetrically with respect to the longitudinal axis of the blade.

[0111] A41 An end effector described in any one of paragraphs A1 to A40, The at least three protruding regions are configured to physically contact the upper surface of the wafer within the wafer edge exclusion region.

[0112] A42 The end effector described in paragraph A41, The wafer edge exclusion region is defined as an annular region located within a threshold exclusion distance from the outer edge of the wafer, and optionally, the threshold exclusion distance can be up to 2 mm, 3 mm, 4 mm, or 5 mm.

[0113] A43 An end effector described in any one of paragraphs A1 to A42, The three aforementioned protruding regions protrude by a threshold protrusion distance from the extended portion side facing the wafer, and optionally, the threshold protrusion distance is at least one of the following: (i) 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, 0.7 mm or more, 0.8 mm or more, 0.9 mm or more, or 1 mm or more. (ii) 1.5 mm or less, 1.4 mm or less, 1.3 mm or less, 1.2 mm or less, 1.1 mm or less, 1 mm or less, 0.9 mm or less, 0.8 mm or less, 0.7 mm or less, 0.6 mm or less, or 0.5 mm or less;

[0114] A44 An end effector described in any one of paragraphs A1 to A43, When the end effector selectively lifts the wafer, at least three protruding regions are configured to resist sliding motion relative to the wafer by static friction between the wafer and the respective protruding ends of the at least three protruding regions.

[0115] A45 An end effector described in any one of paragraphs A1 to A44, Each of the three aforementioned protruding regions has a planar or at least substantially planar protruding end.

[0116] A46 An end effector described in any one of paragraphs A1 to A45, Each of the three protruding regions has a protruding end that is coplanar with the other protruding ends in the three protruding regions.

[0117] A47 An end effector described in any one of paragraphs A1 to A46, The end effector includes a plurality of surface elongation portions, Furthermore, each of the plurality of surface extension portions is configured to be individually and selectively attached to the blade via the mounting mechanism and to be individually and selectively separated from the blade.

[0118] A48 An end effector described in any one of paragraphs A1 to A47, The surface elongation portion is a first surface elongation portion, and the end effector further includes a second surface elongation portion.

[0119] A49 The end effector described in paragraph A48, The end effector is configured such that the mounting mechanism can selectively attach one or only one of the first surface extension portion and the second surface extension portion to the blade and selectively separate them from the blade at a predetermined time.

[0120] A50 An end effector described in any one of paragraphs A48 to A49, The first surface extension defines the shape of the first surface extension, and the second surface extension defines a shape of the second surface extension that is different from the shape of the first surface extension.

[0121] A51 An end effector described in any one of paragraphs A48 to A50, The first surface elongation portion is sized to enable the end effector to selectively lift a first wafer having the first diameter, and the second surface elongation portion is sized to enable the end effector to selectively lift a second wafer having a second diameter different from the first diameter.

[0122] A52 An end effector described in any one of paragraphs A48 to A51, The first surface elongation section is sized to allow the end effector to selectively lift one of the following wafers: 25 mm in diameter, 50 mm in diameter, 75 mm in diameter, 100 mm in diameter, 125 mm in diameter, 150 mm in diameter, 200 mm in diameter, 300 mm in diameter, or 450 mm in diameter. Furthermore, the second surface elongation section is sized to allow the end effector to selectively lift another wafer: 25 mm in diameter, 50 mm in diameter, 75 mm in diameter, 100 mm in diameter, 125 mm in diameter, 150 mm in diameter, 200 mm in diameter, 300 mm in diameter, or 450 mm in diameter.

[0123] A53 An end effector described in any one of paragraphs A48 to A52, The first surface extension includes at least three first protruding regions, the second surface extension includes at least three second protruding regions, and furthermore, the relative orientation of the at least three first protruding regions is different from the relative orientation of the at least three second protruding regions.

[0124] A54 The end effector described in paragraph A53, The relative orientation of the at least three first protruding regions is set so that the at least three first protruding regions contact any of the following wafers within the wafer edge exclusion region corresponding to them: a wafer with a diameter of 25 mm, a wafer with a diameter of 50 mm, a wafer with a diameter of 75 mm, a wafer with a diameter of 100 mm, a wafer with a diameter of 125 mm, a wafer with a diameter of 150 mm, a wafer with a diameter of 200 mm, a wafer with a diameter of 300 mm, or a wafer with a diameter of 450 mm. Furthermore, the relative orientation of the at least three second protruding regions is set so that the at least three second protruding regions contact any of the following wafers within the wafer edge exclusion region corresponding to them: a wafer with a diameter of 25 mm, a wafer with a diameter of 50 mm, a wafer with a diameter of 75 mm, a wafer with a diameter of 100 mm, a wafer with a diameter of 125 mm, a wafer with a diameter of 150 mm, a wafer with a diameter of 200 mm, a wafer with a diameter of 300 mm, or a wafer with a diameter of 450 mm.

[0125] A55 An end effector described in any one of paragraphs A1 to A54, The mounting mechanism includes at least one of the following: a fastener, a lever, a cam, a keyed area, a protruding area, a recessed area, a friction fit, an elastic fit, an adhesive connection, a magnetic connection, a vacuum connection, and an electrostatic connection.

[0126] A56 An end effector described in any one of paragraphs A1 to A55, The entire overlapping surface area within the overlapping region of the wafer is the threshold overlap ratio of the wafer surface area on the top surface of the wafer, and the threshold overlap ratio is at least one of the following: (i) at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, or at least 85%. (ii) up to 95%, up to 92.5%, up to 90%, up to 87.5%, up to 85%, up to 82.5%, or up to 80%.

[0127] A57 An end effector described in any one of paragraphs A1 to A56, When the end effector selectively lifts the wafer, the entire overlapping surface area within the entire overlapping region of the wafer is selected to provide a desired perpendicular force between at least three protruding regions and the top surface of the wafer.

[0128] A58 An end effector described in any one of paragraphs A1 to A57, The overlapping region between the blade and the wafer has an overlapping region area of ​​blade and wafer that is the threshold blade overlapping region ratio of the entire overlapping area, and furthermore, the threshold blade overlapping region ratio is at least one of the following: (i) at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, or at least 85%. (ii) up to 95%, up to 90%, up to 85%, up to 80%, up to 75%, up to 70%, up to 65%, up to 60%, up to 55%, up to 50%, up to 45%, or up to 40%.

[0129] A59 An end effector described in any one of paragraphs A1 to A58, The dimensions are determined to fit the gaps within a wafer cassette configured to accommodate multiple wafers.

[0130] A60 An end effector described in any one of paragraphs A1 to A59, The end effector is configured to lift the wafer without creating direct physical contact with at least one of the following: (i) Direct physical contact between the blade facing the wafer and the wafer. (ii) Direct physical contact between the extended portion facing the wafer and the wafer.

[0131] A61 An end effector described in any one of paragraphs A1 to A60, The end effector includes the wafer.

[0132] B1 A probe system configured for testing wafers containing integrated circuit devices, The probe system is A chuck that defines a support surface configured to support the wafer, A signal generation and signal analysis assembly configured to generate a test signal and receive the resulting signal, (i) receive the test signal from the signal generation and signal analysis assembly and provide the test signal to the integrated circuit device, (ii) Receiving a result signal from the integrated circuit device and providing the result signal to the signal generation and signal analysis assembly, A probe assembly configured to perform at least one of the following: A wafer handling robot configured to position the wafer within the probe system, Equipped with, The wafer handling robot includes the end effector described in any one of paragraphs A1 to A61.

[0133] B2 The probe system described in paragraph B1, The probe system further comprises a wafer cassette docking port configured to receive a wafer cassette containing the wafer.

[0134] B3 The probe system described in paragraph B2, The wafer handling robot is configured to perform at least one of the following: (i) Transfer the wafer from the wafer cassette to the chuck. (ii) Transfer the wafer from the chuck to the wafer cassette.

[0135] B4 A probe system described in any one of paragraphs B1 to B3, The system further comprises a pressurized gas source configured to selectively supply a pressurized gas flow to the gas distribution manifold in order to generate pressure to selectively lift the wafer.

[0136] B5 A probe system described in any one of paragraphs B1 to B4, It is at least one of the following: (i) The support surface is facing upward. (ii) The top surface of the wafer is facing upwards. (iii) The blade facing the wafer is facing downwards. (iv) The extended portion facing the wafer is facing downwards.

[0137] C1 A method utilizing a wafer handling end effector configured to selectively lift a wafer from the top surface of the wafer via pressure, The steps include separating the first surface extension portion that defines the extension portion facing the first wafer from the blade of the wafer handling end effector, along with the surface area of ​​the extension portion facing the first wafer, The steps include attaching a second surface extension portion to the blade of the wafer handling end effector, along with a surface area of ​​the extension portion facing the second wafer that is different from the surface area of ​​the extension portion facing the first wafer, and defining the extension portion side facing the second wafer, Includes.

[0138] C2 The method described in paragraph C1, (i) The separation step includes the step of elastically deforming the first surface elongation portion. (ii) The mounting step includes the step of elastically deforming the second surface elongation portion.

[0139] C3 The method described in any one of paragraphs C1 to C2, The aforementioned mounting step includes mounting via a mounting mechanism for the wafer handling end effector.

[0140] C4 A method described in any one of paragraphs C1 to C3, The procedure includes performing a separation step and an attachment step while the blade is fixed to the wafer handling robot.

[0141] C5 The method described in any one of paragraphs C1 to C4, The process further includes, after the mounting step, a step of lifting the wafer, and further includes a step of performing the wafer lifting without first teaching the robot.

[0142] C6 The method described in any one of paragraphs C1 to C5, The process includes, prior to the separation step, positioning a first wafer of a first diameter using the end effector, and further, after the mounting step, positioning a second wafer of a second diameter different from the first diameter using the end effector.

[0143] C7 A method described in any one of paragraphs C1 to C6, The wafer handling end effector includes any suitable structure of an end effector as described in any one of paragraphs A1 to A61. [Industrial applicability]

[0144] The end effectors, probe systems, and methods disclosed herein are applicable to the semiconductor manufacturing and testing industries.

[0145] The above disclosure is considered to encompass several different inventions, each possessing independent utility. While each of these inventions is disclosed in a preferred form, the specific embodiments disclosed and illustrated herein should not be construed as restrictive, as numerous variations are possible. The subject matter of the invention includes any novel and non-obvious combinations and partial combinations of the various elements, features, functions, and / or characteristics disclosed herein. Similarly, where a claim describes an element or its equivalent, such a claim should be understood to include the incorporation of one or more such elements, and not to require or exclude two or more such elements.

[0146] The following claims are considered to target one of the disclosed inventions and specifically point to certain novel and non-obvious combinations and partial combinations. Inventions embodied in other combinations and partial combinations of features, functions, elements and / or properties may be claimed by amendment of these claims or by the presentation of new claims in this application or related applications. Such modified or new claims, whether directed to a different invention or the same invention, or whether different in scope, broader, narrower, or equal to the original claims, are considered to be included within the subject matter of the inventions of this disclosure. [Explanation of Symbols]

[0147] 10 Probe Systems 20 Chuck 30 Signal Generation and Signal Analysis Assemblies 32 Test signal 34 Result Signal 40 probe assemblies 50 Wafer Handling Robots 60 Pressurized gas source 62 Pressurized gas flow 70 Wafer Cassette Docking Ports 72 wafer cassettes 74 wafers 75 Integrated Circuit Devices 100 Wafer Handling End Effectors 120 blades 200 Surface extension 260 Mounting mechanism

Claims

1. A wafer handling end effector configured to selectively lift a wafer from the top surface of the wafer via pressure, The end effector is, A blade that defines the blade side facing the wafer, the blade including a gas distribution manifold that is in fluid communication with the wafer-facing blade side, A surface extension that defines a wafer-facing extension side extending away from the blade, wherein the surface extension extends at least partially around the wafer-facing blade side and further includes at least three protruding regions that project from the wafer-facing extension side, wherein the at least three protruding regions are configured to physically contact the upper surface of the wafer when the end effector selectively lifts the wafer. A mounting mechanism configured to selectively attach the surface extension portion to the blade and to selectively separate the surface extension portion from the blade, Equipped with, The surface elongation portion includes a first surface elongation portion and a second surface elongation portion. The end effector is configured such that the mounting mechanism selectively attaches only one of the first surface extension portion and the second surface extension portion to the blade at a predetermined time, and selectively detaches it from the blade. The first surface elongation portion is formed to a size that allows the end effector to selectively lift a first wafer having a first diameter. An end effector wherein the second surface elongation portion is formed to a size that enables the end effector to selectively lift a second wafer having a second diameter different from the first diameter.

2. The end effector includes a plurality of surface elongation portions, Furthermore, each of the multiple surface extensions is configured to be individually and selectively attached to the blade via the mounting mechanism, and to be individually and selectively separated from the blade. The end effector according to claim 1.

3. (i) The first surface extension defines the shape of the first surface extension, and the second surface extension defines the shape of the second surface extension which is different from the shape of the first surface extension. (ii) The first surface extension includes at least three first protruding regions, and the second surface extension includes at least three second protruding regions, and the relative directions of the at least three first protruding regions are different from the relative directions of the at least three second protruding regions. The end effector according to claim 1, which is at least one of the following.

4. The blade includes an extension receiving region, and further, the surface extension extends around the extension receiving region. The end effector according to claim 1.

5. The extension receiving region is, (i) Arch-shaped extension receiving area (ii) at least partially circular elongation receiving area (iii) At least partially U-shaped extension receiving area (iv) Polygonal extension receiving region The end effector according to claim 4, which is at least one of the following.

6. The blade side facing the wafer is at least substantially the blade side facing the wafer. The end effector according to claim 1.

7. The blade defines a blade edge that extends between the blade side opposite the wafer and the blade side facing the wafer, The blade side opposite to the wafer is at least substantially the blade side opposite to the wafer, Furthermore, the blade edge defines the extension receiving region of the blade. The end effector according to claim 1.

8. The aforementioned blade is defined by the blade material, The surface elongation portion is defined by an elongation material different from the blade material. The end effector according to claim 1.

9. The gas distribution manifold includes a plurality of openings defined within the blade side facing the wafer, The end effector according to claim 1.

10. The blade side facing the wafer defines the blade side normal direction facing the wafer, The aforementioned multiple openings extend from a plurality of corresponding fluid conduits, Each of the aforementioned plurality of corresponding fluid conduits defines a corresponding fluid flow axis, Furthermore, the corresponding fluid flow axis of each of the fluid conduits is oriented at a flow angle corresponding to the blade-side normal direction facing the wafer. Furthermore, the corresponding flow angle is at least 30 degrees and at most 80 degrees. The end effector according to claim 9.

11. The aforementioned multiple openings are arranged in multiple concentric circles, Furthermore, the corresponding flow angle of each fluid conduit at each opening within a predetermined concentric circle among the plurality of concentric circles extends at least partially along the conical surface. The end effector according to claim 10.

12. The gas distribution manifold is configured to supply a pressurized gas flow to the blade side facing the wafer through the plurality of openings. The end effector according to claim 9.

13. The gas distribution manifold is configured such that the wafer handling end effector selectively lifts the wafer via at least one of the Bernoulli effect and the cyclone effect. The end effector according to claim 1.

14. The extended portion facing the wafer is at least substantially coplanar with the blade side facing the wafer. The end effector according to claim 1.

15. The extended portion facing the wafer extends at least substantially parallel to the blade side facing the wafer. The end effector according to claim 1.

16. The at least three protruding regions are configured to physically contact the upper surface of the wafer within the wafer edge exclusion region. The end effector according to claim 1.

17. When the end effector selectively lifts the wafer, The at least three protruding regions are configured to resist sliding motion relative to the wafer via static frictional force between the wafer and each of the protruding ends in the at least three protruding regions. The end effector according to claim 1.

18. The at least three protruding regions are configured to protrude toward the wafer when the end effector selectively lifts the wafer. The end effector according to claim 1.

19. The mounting mechanism includes at least one of a fastener, lever, cam, keyed area, protruding area, recessed area, friction fitting, elastic fitting, adhesive connection, magnetic connection, vacuum connection, and electrostatic connection. The end effector according to claim 1.

20. The blade side facing the wafer defines the overlapping region between the blade and the wafer. The extended portion facing the wafer defines an overlapping region between the extended portion and the wafer. The overlapping region between the blade and the wafer and the overlapping region between the extension portion and the wafer together define the entire wafer overlapping region of the end effector, and furthermore, the entire wafer overlapping region is configured to face and overlap the upper surface of the wafer when the end effector selectively lifts the wafer. The end effector according to claim 1.

21. The overlapping region between the blade and the wafer has an overlapping region area between the blade and the wafer that is a threshold blade overlapping region ratio of the entire overlapping surface area in the entire wafer overlapping region. Furthermore, the threshold blade overlap area ratio is at least 25% and at most 95%. The end effector according to claim 20.

22. The first surface elongation portion defines the shape of the first surface elongation portion, Furthermore, the second surface extension defines a shape that is different from the shape of the first surface extension. The end effector according to claim 1.

23. The first surface extension portion includes at least three first protruding regions, The second surface extension includes at least three second protruding regions, Furthermore, the relative orientation of the at least three first protruding regions is different from the relative orientation of the at least three second protruding regions. The end effector according to claim 1.

24. A probe system configured for testing wafers containing integrated circuit devices, The probe system is A chuck that defines a support surface configured to support the wafer, A signal generation and signal analysis assembly configured to generate a test signal and receive the resulting signal, (i) Receiving the test signal from the signal generation and signal analysis assembly and providing the test signal to the integrated circuit device, (ii) Receiving a result signal from the integrated circuit device and providing the result signal to the signal generation and signal analysis assembly, A probe assembly configured to perform at least one of the following: A wafer handling robot configured to position the wafer within the probe system, Equipped with, The wafer handling robot includes the end effector described in any one of claims 1 to 23. Probe system.

25. The probe system includes a pressurized gas source configured to selectively supply a pressurized gas flow to the gas distribution manifold in order to generate pressure to selectively lift the wafer, To further prepare. The probe system according to claim 24.

26. A method utilizing a wafer handling end effector configured to selectively lift a wafer from the top surface of the wafer via pressure, The steps include separating the first surface extension portion that defines the extension portion facing the first wafer from the blade of the wafer handling end effector, along with the surface area of ​​the extension portion facing the first wafer, The steps include attaching a second surface extension portion to the blade of the wafer handling end effector, along with a surface area of ​​the extension portion facing the second wafer that is different from the surface area of ​​the extension portion facing the first wafer, and defining the extension portion side facing the second wafer, Methods that include...

27. (i) The separation step includes the step of elastically deforming the first surface elongation portion, (ii) The mounting step includes the step of elastically deforming the second surface elongation portion, The method according to claim 26, comprising at least one of the following.

28. Prior to the separation step, the procedure includes a step of using an end effector to position a first wafer of a first diameter, Furthermore, the process includes, after the mounting step, a step of using an end effector to position a second wafer having a second diameter different from the first diameter, The method according to claim 27.

29. The steps include performing the separation step and the mounting step while the blade is fixed to the wafer handling robot, The method according to claim 26.

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