Vapor deposition apparatus and vapor deposition method
The vapor deposition apparatus with dual evaporation sources in a single chamber addresses the inefficiencies of conventional systems by enabling simultaneous deposition of multiple layers on different substrates, reducing costs and space while enhancing production capacity.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
- Filing Date
- 2022-09-22
- Publication Date
- 2026-06-24
AI Technical Summary
Conventional evaporation systems for display devices, such as OLED devices, require multiple chambers for each film layer, leading to high costs, large space occupation, and low production capacity utilization.
A vapor deposition apparatus with two evaporation sources in a single chamber, allowing simultaneous deposition of two film layers on different substrates, reducing the number of required deposition apparatuses by half and optimizing space and efficiency.
The solution reduces the number of deposition apparatuses needed, decreases the system's footprint, and increases production capacity utilization while maintaining high deposition efficiency.
Smart Images
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Abstract
Description
Technical Field
[0001] This application claims priority to Chinese Patent Application No. 202210820657.7, titled "Evaporation Device, Evaporation System, and Evaporation Method", filed on July 13, 2022, and all the contents of this application are incorporated herein by reference.
[0002] This application relates to the technical field of evaporation, particularly to an evaporation device , and and an evaporation method.
Background Art
[0003] Conventional display devices are formed using an evaporation process. Conventional evaporation systems need to have one chamber for the evaporation of each film layer. Taking an OLED device as an example, the number of its film layers is currently mainly 10 - 13 layers, and it is necessary to form one evaporation system with 10 - 13 evaporation devices. As a result, the cost of the evaporation system is high, the occupied space is large, and the utilization rate of production capacity is low.
Summary of the Invention
[0004] Embodiments of this application provide an evaporation device , and and an evaporation method, which can meet the evaporation requirements of a device, and the evaporation system it applies has a low cost, a small occupied space, and a high utilization rate of production capacity.
[0005] In one aspect, according to an embodiment of this application, there is provided a substrate having an evaporation chamber including a first evaporation region and a second evaporation region continuously distributed along a first direction, a guiding member located in the first evaporation region and the second evaporation region, and an evaporation source assembly provided on the guiding member. The evaporation source assembly includes a first evaporation source and a second evaporation source that are respectively movably connected to the guiding member, are reciprocally movable in the first evaporation region and the second evaporation region, and are reciprocally movable relative to the guiding member along a second direction intersecting the first direction.
[0007] Furthermore, in one embodiment, according to the embodiment of this application, The above-mentioned deposition apparatus is provided, and the first evaporation source is positioned in the first deposition region, and the second evaporation source is positioned in the second deposition region, A placement step in which a first substrate to be deposited is placed in a first deposition area, and a second substrate to be deposited is placed in a second deposition area, The deposition method includes a deposition step of moving a first evaporation source relative to a guide member to sequentially deposit and form a first deposition layer on a first substrate and a second substrate, and controlling a second evaporation source to move relative to a guide member to sequentially form a second deposition layer on the first deposition layer of the first substrate and the first deposition layer of the second substrate.
[0008] According to further embodiments of the embodiments of this application, the deposition step is: A preliminary evaporation step in which a first evaporation source is controlled so that a first evaporation layer is deposited and formed on a first substrate, A first position adjustment step involves controlling the first evaporation source to enter the second deposition region and the second evaporation source to enter the first deposition region, A secondary evaporation step in which a first evaporation source is controlled to deposit a first evaporation layer onto a second substrate, and a second evaporation source is controlled to deposit a second evaporation layer onto the first evaporation layer formed on the first substrate, A first feed step involves unloading the first substrate on which the first and second deposition layers are formed, and loading the next first substrate to be deposited, A second position adjustment step involves controlling the first evaporation source to enter the first deposition region and the second evaporation source to enter the second deposition region. A re-deposition step in which a first evaporation source is introduced to deposit a first deposition layer onto a first substrate to be deposited, and a second evaporation source is controlled to deposit a second deposition layer onto the first deposition layer formed on a second substrate, A second feed step involves unloading the second substrate on which the first and second deposition layers are formed, and loading the next second substrate to be deposited, Includes, The first position adjustment step, secondary deposition step, first feed step, second position adjustment step, re-deposition step, and second feed step are repeatedly performed so that the first and second deposition layers are formed on any of the multiple first and second substrates to be deposited using the same deposition apparatus.
[0009] According to the embodiment of the present application, the deposition apparatus, deposition system, and deposition method include a substrate, a guide member, and an evaporation source assembly. The deposition chamber of the substrate includes a first deposition region and a second deposition region continuously distributed along a first direction. The evaporation source assembly includes a first evaporation source and a second evaporation source located within the same deposition chamber. The first and second evaporation sources are each movably connected to the guide member. To achieve the deposition of two deposition layers on two different substrates to be deposited within the same evaporation chamber, both the first and second evaporation sources are reciprocally movable between the first and second deposition regions, and both the first and second evaporation sources are reciprocally movable relative to the guide member along a second direction. The deposition apparatus can meet the deposition requirements of a device and reduce the number of deposition apparatuses required for the deposition system to which it is applied. For example, with respect to an OLED device, the deposition requirements for a multilayer film can be met with half the number of deposition apparatuses required in the prior art, resulting in lower costs, smaller footprint, and higher production capacity utilization. [Brief explanation of the drawing]
[0010] The features, advantages, and technical effects of exemplary embodiments of this application will be described below with reference to the drawings. [Figure 1] This is a schematic diagram of the structure of a vapor deposition apparatus according to one embodiment of this application. [Figure 2] This is a schematic diagram of a structure in which a first evaporation source is located in a first evaporation region and a second evaporation source is located in a second evaporation region of an evaporation apparatus according to another embodiment of the present application. [Figure 3] This is a schematic diagram showing the first and second evaporation sources of a deposition apparatus according to another embodiment of the present application, operating along a second direction. [Figure 4] This is a schematic diagram of a structure in which the first evaporation source of a deposition apparatus according to another embodiment of the present application is located in the second deposition region, and the second evaporation source is located in the first deposition region. [Figure 5] This is a schematic diagram of the structure of a vapor deposition apparatus according to another embodiment of this application. [Figure 6] This is a schematic diagram of the structure of a vapor deposition apparatus according to a further embodiment of the present application. [Figure 7] This is a schematic diagram of the structure of a vapor deposition system according to one embodiment of this application. [Figure 8] This is a flowchart of a vapor deposition method according to one embodiment of this application. [Figure 9] This is a schematic diagram of the structure corresponding to each step of the vapor deposition method according to one embodiment of this application. [Figure 10] This is a schematic diagram of the structure corresponding to each step of the vapor deposition method according to one embodiment of this application. [Figure 11] This is a schematic diagram of the structure corresponding to each step of the vapor deposition method according to one embodiment of this application. [Figure 12] This is a schematic diagram of the structure corresponding to each step of the vapor deposition method according to one embodiment of this application. [Figure 13] This is a schematic diagram of the structure corresponding to each step of the vapor deposition method according to one embodiment of this application. [Figure 14] This is a schematic diagram of the structure corresponding to each step of the vapor deposition method according to one embodiment of this application. [Modes for carrying out the invention]
[0011] The features and exemplary embodiments of each aspect of the present application will be described in detail below. In the following detailed description, many specific details are provided to provide a thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without some of these specific details. The following description of the embodiments is for better understanding of the present application by showing examples of the present application. In the drawings and the following description, at least partially known configurations and technologies are not shown, thereby avoiding the present application becoming unnecessarily ambiguous. And, for clarity, the sizes of some configurations may be exaggerated. Also, the features, configurations, or characteristics described below can be combined with one or more embodiments in any suitable manner.
[0012] The directional terms used in the following description are all the directions shown in the drawings, and do not limit the specific structure of the vapor deposition device, vapor deposition apparatus, and vapor deposition method of the present application. Also, as should be explained, in the description of the present application, unless there are clear regulations and limitations, the terms "attachment" and "connection" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection, and may also be a direct connection or an indirect connection through an intermediate medium. A person skilled in the art can understand the specific meaning of the above terms in the present application according to the specific situation.
[0013] The related display device is formed by using an evaporation process. The conventional vapor deposition device needs to have one chamber for the vapor deposition of each film layer.
[0014] Taking the OLED device as an example, the current mainstream is that its film layers are 10 to 13 layers, and it is necessary to form one vapor deposition system by 10 to 13 vapor deposition devices. Moreover, for every two vapor deposition devices, it is necessary to at least combine one transfer chamber, one transition chamber, and a gas auxiliary chamber. As a result, the vapor deposition system formed by the vapor deposition device has high costs, a large occupied space, and a low utilization rate of production capacity.
[0015] To solve the above problems, an embodiment of the present application provides a vapor deposition apparatus, a vapor deposition system, and a vapor deposition method. The vapor deposition apparatus installs two evaporation sources simultaneously in one evaporation chamber, that is, at least two layers of film layers can be deposited by the same vapor deposition apparatus. As a result, the vapor deposition system can save the vapor deposition apparatus and corresponding transition chambers, etc. by half.
[0016] To better understand the present application, hereinafter, with reference to FIGS. 1 to 14, the vapor deposition apparatus, the vapor deposition system, and the vapor deposition method according to the embodiments of the present application will be described in detail.
[0017] As shown in FIG. 1, an embodiment of the present application provides a vapor deposition apparatus 100 including a substrate 10 having a vapor deposition chamber including a first vapor deposition region 11 and a second vapor deposition region 12 continuously distributed along a first direction X, a guide member 20, and an evaporation source assembly 30. The guide member 20 is located in the first vapor deposition region 11 and the second vapor deposition region 12. The evaporation source assembly 30 is provided on the guide member 20. The evaporation source assembly 30 includes a first evaporation source 31 and a second evaporation source 32. The first evaporation source 31 and the second evaporation source 32 are respectively movably connected to the guide member 20. Both the first evaporation source 31 and the second evaporation source 32 are reciprocally movable in the first vapor deposition region 11 and the second vapor deposition region 12, and both the first evaporation source 31 and the second evaporation source 32 are reciprocally movable relative to the guide member 20 along a second direction Y intersecting the first direction X.
[0018] Optionally, the first vapor deposition region 11 and the second vapor deposition region 12 are two regions continuously provided in the same vapor deposition chamber.
[0019] Optionally, the fact that the guide member 20 is located in the first vapor deposition region 11 and the second vapor deposition region 12 is understood to mean that the guide member 20 may be partially located in the first vapor deposition region 11 and partially located in the second vapor deposition region 12.
[0020] Selectively, the first evaporation source 31 and the second evaporation source 32 may, in their initial state, be located in the first deposition region 11 and the other in the second deposition region 12, and both the first evaporation source 31 and the second evaporation source 32 may be movably connected to the guide member 20 so as to reciprocate between the first deposition region 11 and the second deposition region 12, and reciprocate along a second direction Y relative to the guide member 20 within the same deposition region.
[0021] The selective connection of the first evaporation source 31 and the second evaporation source 32 to the guide member 20 may be understood as meaning that the positions of both the first evaporation source 31 and the second evaporation source 32 relative to the guide member 20 are adjustable. The movable connection may include connection methods that allow the positions of the first evaporation source 31 and the second evaporation source 32 relative to the guide member 20 to be adjusted, such as sliding connections and rolling connections.
[0022] Selectively, the intersection angle between the first direction X and the second direction Y may be greater than 90°, less than 90°, and of course, selectively, the intersection angle between the first direction X and the second direction Y may be equal to 90°.
[0023] Selectively, the first evaporation source 31 and the second evaporation source 32 may be point sources, or of course, they may be line sources, and selectively, they are line sources.
[0024] The deposition apparatus 100 according to the embodiment of this application, when in use, can initially position the first evaporation source 31 in the first deposition region 11 and the second evaporation source 32 in the second deposition region 12 within the same deposition apparatus 100, place the first substrate to be deposited on the first deposition region 11 and place the second substrate to be deposited on the second deposition region 12, control the first evaporation source 31 to move relative to the guide member 20 to sequentially deposit and form the first deposition layer on the first substrate and the second substrate, and control the second evaporation source 32 to move relative to the guide member 20 to sequentially form the second deposition layer on the first deposition layer of the first substrate and the first deposition layer of the second substrate.
[0025] In other words, the same deposition apparatus 100 can deposit two different film layers onto each of two different substrates. Taking OLED devices as an example, the film layers currently consist mainly of 10 to 13 layers. Assuming 12 layers, a conventional deposition system would need to consist of 12 deposition apparatuses based on the conventional deposition method of one film layer per chamber of the deposition apparatus 100. However, by adopting the deposition apparatus 100 according to the embodiment of this application, when depositing and molding OLED devices, the deposition of 10 to 13 film layers can be completed with only 6 deposition apparatuses 100, not only reducing the overall cost of the deposition system but also reducing the number of deposition apparatuses 100, reducing the occupied space to approximately half of the original, and enabling the deposition of two different substrates to be completed at once, thereby increasing the utilization rate of the deposition apparatus 100 and the production capacity of the deposition system to which it is applied.
[0026] As an optional embodiment, in the deposition apparatus 100 according to the embodiment of this application, the evaporation source assembly 30 and the guide member 20 can be switched between a first state in which the first evaporation source 31 is located in the first deposition region 11 and the second evaporation source 32 is located in the second deposition region 12, and a second state in which the first evaporation source 31 moves to the second deposition region 12 and the second evaporation source 32 moves to the first deposition region 11.
[0027] Selectively, the evaporation source assembly 30 and the guide member 20 are positioned such that the first evaporation source 31 and the second evaporation source 32 are located in different evaporation regions in any state.
[0028] The deposition apparatus 100 according to the embodiment of this application can switch the evaporation source assembly 30 and the guide member 20 between a first state and a second state, and by positioning the first evaporation source 31 and the second evaporation source 32 in different evaporation regions in the different states, interference between the first evaporation source 31 and the second evaporation source 32 during operation can be avoided. Furthermore, with the above setup, when using the deposition apparatus 100, in at least some sections, the first evaporation source 31 and the second evaporation source 32 can be synchronized to form different deposition film layers on different substrates to be deposited, ensuring that the deposition of at least two different film layers on the same substrate can be completed in the same evaporation chamber, as well as ensuring that the deposition of at least two different film layers on different substrates can be completed in the same evaporation chamber, thereby improving the utilization rate of production capacity.
[0029] As an optional embodiment, in the deposition apparatus 100 according to the embodiment of this application, the first evaporation source 31 and the second evaporation source 32 can move synchronously with respect to the guide member 20.
[0030] In other words, within the same time period, the first evaporation source 31 and the second evaporation source 32 can move simultaneously relative to the guide member 20.
[0031] For example, within the same time period, the first evaporation source 31 may move upward along the second direction Y and the second evaporation source 32 may move downward along the second direction Y. Alternatively, for example, within the same time period, the first evaporation source 31 may move to the right along the first direction X and the second evaporation source 32 may move to the left along the first direction X.
[0032] Of course, when the evaporation apparatus 100 is in use, the first evaporation source 31 and the second evaporation source 32 may move in synchronously, or of course, one may be fixed and the other may move depending on the evaporation process.
[0033] The deposition apparatus 100 according to the embodiment of this application can move the first evaporation source 31 and the second evaporation source 32 synchronously with respect to the guide member 20. Two substrates to be deposited are placed in the same deposition apparatus 100, and after a first film layer is deposited on one substrate by the first evaporation source 31, the first evaporation source 31 and the second evaporation source 32 are moved synchronously. As a result, the second evaporation source 32 deposits a second film layer onto the substrate on which the first film layer has been formed, while the first evaporation source 31 deposits a first film layer onto the other substrate on which no film layer has been formed. This effectively improves the production efficiency of the deposition apparatus 100 and increases the utilization rate of production capacity.
[0034] As an optional embodiment, in the deposition apparatus 100 according to the embodiment of this application, the guide member 20 includes a closed ring-shaped edge guide portion 21 located in a first deposition region 11 and a second deposition region 12, and a central guide portion 22 located in a ring-shaped chamber surrounded by the edge guide portion 21. A first evaporation source 31 is connected to the edge guide portion 21 and the central guide portion 22 and is movable at least along the edge guide portion 21, and a second evaporation source 32 is connected to the edge guide portion 21 and the central guide portion 22 and is movable at least along the edge guide portion 21.
[0035] Selectively, the edge guide portion 21 may be a closed ring shape, a single loop, or formed by joining multiple guide rails.
[0036] The edge guide portion 21 may be a polygonal ring, or it may be a rectangular ring.
[0037] Optionally, the central guide portion 22 may be located within the ring-shaped chamber of the edge guide portion 21 and connected to the edge guide portion 21, or it may be provided at a distance from the edge guide portion 21.
[0038] Selectively, the first evaporation source 31 and the second evaporation source 32 are movably connected to the edge guide 21, and the first evaporation source 31 and the second evaporation source 32 may be fixedly connected to the central guide 22 or movably connected to it.
[0039] The vapor deposition apparatus 100 according to the embodiment of this application includes an edge guide portion 21 and a central guide portion 22 in the guide member 20, and by defining the positional relationship between the edge guide portion 21 and the central guide portion 22 and the connection relationship between the first evaporation source 31 and the second evaporation source 32, the guide member 20 satisfies the requirement for positional adjustment of the first evaporation source 31 and the second evaporation source 32, while the overall structure of the guide member 20 is simple, advantageous for molding, and low cost.
[0040] As an optional embodiment, in the deposition apparatus 100 according to the embodiment of this application, the edge guide portion 21 is a polygonal ring-shaped trajectory.
[0041] Selectively, the edge guide portion 21 may be a rectangular ring-shaped orbital, or a hexagonal, octagonal, or other ring-shaped orbital as needed, and may be specifically set according to the deposition process.
[0042] In the deposition apparatus 100 according to the embodiment of this application, by making the edge guide portion 21 a polygonal ring-shaped trajectory, the position adjustment of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y is facilitated, and the deposition of at least two film layers on different substrates to be deposited within the same deposition apparatus 100 is facilitated.
[0043] As an optional embodiment, in the deposition apparatus 100 according to the embodiment of this application, the edge guide section 21 includes a pair of first guide rails 211 distributed along a first direction X and extending along a second direction Y, and a pair of second guide rails 212 distributed along the second direction Y and extending along the first direction X, wherein the first guide rails 211 and the second guide rails 212 are distributed alternately and their start and end points are connected.
[0044] Selectively, the number of first guide rails 211 may be two, or of course four or six, and selectively, it is two.
[0045] Selectively, the number of second guide rails 212 may be two, of course, four or six, and selectively, it is two.
[0046] The first guide rail 211 and the second guide rail 212, which are optionally provided in pairs, may form a rectangular frame-shaped guide rail.
[0047] In the deposition apparatus 100 according to the embodiment of this application, the edge guide portion 21 adopts the above-described structural form, and the structure of the edge guide portion 21 can be further simplified in order to satisfy the requirement for stable position adjustment of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y.
[0048] As an optional embodiment, in the deposition apparatus 100 according to the embodiment of this application, the central guide section 22 includes two or more third guide rails 221 distributed along a first direction X and each extending along a second direction Y and connected to an edge guide section 21, the first evaporation source 31 is movably connected to at least one third guide rail 221, and the second evaporation source 32 is movably connected to at least one third guide rail 221.
[0049] Selectively, the number of third guide rails 221 may be two or more, and each third guide rail 221 extends along a second direction Y, so that the first evaporation source 31 may be movably connected to one third guide rail 221 or to two or more third guide rails 221, and the second evaporation source 32 may be movably connected to one third guide rail 221 or to two or more third guide rails 221.
[0050] Optionally, the third guide rail 221 may have one end connected to one of the paired second guide rails 212 in the second direction Y, and the other end connected to the other of the paired second guide rails 212.
[0051] Selectively, the third guide rail 221 is positioned parallel to each of the first guide rails 211 with a gap in the first direction X.
[0052] Selectively, the third guide rail 221 may adopt an integrated structure with the edge guide portion 21, or it may adopt a separate structure and be connected by welding or the like, and of course, in some other examples, each third guide rail may be connected to the edge guide portion 21 in contact with each other, for example, they may be in contact with each other.
[0053] In the deposition apparatus 100 according to the embodiment of this application, the central guide section 22 includes two or more third guide rails 221 distributed along a first direction X, and by defining the engagement relationship between the first evaporation source 31 and the second evaporation source 32 and the third guide rails 221 and the edge guide section 21, it is possible to easily satisfy the movement requirements of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y, and at the same time be able to move along the second direction Y in one evaporation region and switch between different evaporation regions along the first direction X, thereby ensuring the deposition requirements of two different film layers for each of two different substrates.
[0054] Furthermore, a configuration in which the central guide section 22 includes two or more third guide rails 221 is merely an optional embodiment and is not limited to the above configuration.
[0055] As shown in Figures 2 to 4, in some embodiments, the central guide section 22 includes a pivot shaft 222, a main connecting shaft 223, a first connecting arm 224, and a second connecting arm 225. The main connecting shaft 223 is rotatably connected to the pivot shaft 222 and is rotatable about the pivot shaft 222 as the pivot point. One end of the main connecting shaft 223 is rotatably connected to the first connecting arm 224, and the other end is rotatably connected to the second connecting arm 225. The first evaporation source 31 is provided on the first connecting arm 224 and slidably connected to the edge guide section 21. The second evaporation source 32 is provided on the second connecting arm 225 and slidably connected to the edge guide section 21.
[0056] Optionally, the pivot axis 222 and the main connecting axis 223 may be arranged to intersect, or optionally, they may be arranged orthogonally to each other, with the main connecting axis 223 rotating around the pivot axis 222 as the center of rotation.
[0057] Optionally, the main connecting shaft 223 may be rotatably connected to the pivot shaft 222 at its longitudinal center.
[0058] Optionally, the first connecting arm 224 may have a predetermined length and be rotatably connected at one end along its longitudinal direction to one end of the main connecting shaft 223, and may be connected by a rotating shaft; and accordingly, the second connecting arm 225 may have a predetermined length and be rotatably connected at one end along its longitudinal direction to the other end of the main connecting shaft 223, and may be connected by a rotating shaft.
[0059] Optionally, the first evaporation source 31 may be slidably fitted at one end to the edge guide portion 21 and fixed at the other end of the first connecting arm 224 away from the main connecting shaft 223, and accordingly, the second evaporation source 32 may be slidably fitted at one end to the edge guide portion 21 and fixed at the other end of the second connecting arm 225 away from the main connecting shaft 223.
[0060] As shown in Figures 2 to 4, in the vapor deposition apparatus 100 according to the embodiment of this application, the central guide section 22 adopts the above-described structural configuration, and when it is necessary to adjust the positions of the first evaporation source 31 and the second evaporation source 32, the main connecting shaft 223 is rotated using the pivot shaft 222 as the pivot point, thereby rotating the main connecting shaft 223 and moving the first connecting arm 224 and the second connecting arm 225, and further moving the first evaporation source 31 and the second evaporation source 32 along the edge guide section 21. When the angle at which the main connecting shaft 223 rotates around the pivot shaft 222 is 180° or less, the first evaporation source 31 and the second evaporation source 32 can move along the second direction Y relative to the edge guide 21 to the first deposition region 11 or the second deposition region 12. When the angle at which the main connecting shaft 223 rotates around the pivot shaft 222 is greater than 180°, the first evaporation source 31 and the second evaporation source 32 can move along the first direction X to the first deposition region 11 and the second deposition region 12. Similarly, the position adjustment requirements for the first evaporation source 31 and the second evaporation source 32 can be met.
[0061] As shown in Figure 5, in some embodiments, the vapor deposition apparatus 100 according to the embodiment of this application may simultaneously include two or more third guide rails 221, a pivot shaft 222, a main connecting shaft 223, a first connecting arm 224, and a second connecting arm 225.
[0062] Two or more third guide rails 221 are distributed along a first direction X, each third guide rail 221 extends along a second direction Y and is connected to an edge guide 21, a first evaporation source 31 is movably connected to at least one third guide rail 221, and a second evaporation source 32 is movably connected to at least one third guide rail 221. For ease of understanding, an example is described in which the central guide 22 includes two third guide rails 221. The pivot shaft 222 may be located between two adjacent third guide rails 221, and the main connecting shaft 223 is rotatably connected to the pivot shaft 222 and rotatable about the pivot shaft 222 as the pivot point, with one end of the main connecting shaft 223 rotatably connected to the first connecting arm 224 and the other end rotatably connected to the second connecting arm 225, the first evaporation source 31 is provided on the first connecting arm 224 and slidably connected to the edge guide 21 and one of the third guide rails 221, and the second evaporation source 32 is provided on the second connecting arm 225 and slidably connected to the edge guide 21 and the other third guide rail 221.
[0063] The vapor deposition apparatus according to the embodiment of this application includes a central guide section that simultaneously includes a third guide rail 221, a pivot shaft 222, a main connecting shaft 223, a first connecting arm 224, and a second connecting arm 225. When it is necessary to adjust the positions of the first evaporation source 31 and the second evaporation source 32, the main connecting shaft 223 can be rotated around the pivot shaft 222 as the pivot point, thereby rotating the main connecting shaft 223 to move the first connecting arm 224 and the second connecting arm 225, and further moving the first evaporation source 31 and the second evaporation source 32.
[0064] When the angle at which the main connecting shaft 223 rotates with the pivot shaft 222 as the center of rotation is 180° or less, the first evaporation source 31 can move along the second direction Y relative to the edge guide 21 and one of the third guide rails 221 to the first deposition region 11 or the second deposition region 12, and at the same time, the second evaporation source 32 can move along the second direction Y relative to the edge guide 21 and the other third guide rail 221 to the first deposition region 11 or the second deposition region 12.
[0065] When the angle at which the main connecting shaft 223 rotates around the pivot shaft 222 exceeds 180°, the first evaporation source 31 and the second evaporation source 32 can be moved along the first direction X relative to the edge guide 21 to the first deposition region 11 and the second deposition region 12. Similarly, the position adjustment requirements for the first evaporation source 31 and the second evaporation source 32 can be met.
[0066] As shown in Figure 6, as an optional embodiment, the vapor deposition apparatus 100 according to the embodiment of this application further includes a first mounting plate 40 and a second mounting plate 50 for mounting a substrate to be vapor-deposited, wherein the first mounting plate 40 is provided in the first vapor deposition region 11 and the second mounting plate 50 is provided in the second vapor deposition region 12.
[0067] Selectively, the shapes of the first mounting plate 40 and the second mounting plate 50 may be the same, and in the first direction X, the first mounting plate 40 and the second mounting plate 50 may be installed facing each other.
[0068] Selectively, both the first mounting plate 40 and the second mounting plate 50 are used to place substrates to be deposited. When the deposition apparatus 100 is operating, the first mounting plate 40 may be used to place a first substrate to be deposited, and the second mounting plate 50 may be used to place a second substrate to be deposited.
[0069] Optionally, the first mounting plate 40 and the second mounting plate 50 may have surfaces flush with the evaporation source assembly 30.
[0070] The vapor deposition apparatus 100 according to the embodiment of this application can achieve the synchronous placement of at least two substrates to be vapor-deposited by providing a first mounting plate 40 and a second mounting plate 50, thereby ensuring the flatness of the substrates to be vapor-deposited, and can also ensure the positioning of the substrates to be vapor-deposited by the positions of the first mounting plate 40 and the second mounting plate 50, thereby ensuring the vapor deposition effect.
[0071] As an optional embodiment, the deposition apparatus 100 according to the embodiment of this application further includes a partition plate (not shown) provided on the substrate 10 and at least partially separating the first deposition region 11 and the second deposition region 12.
[0072] Selectively, the partition plate is provided with avoidance spaces to prevent movement of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y.
[0073] The vapor deposition apparatus 100 according to the embodiment of this application can, by providing a partition plate, isolate to some extent the material discharged from the first evaporation source 31 and the material discharged from the second evaporation source 32, thereby reducing crosstalk between the two and ensuring the performance of the formed film layer.
[0074] As an optional embodiment, the deposition apparatus 100 according to the embodiment of this application further includes a collector configured to collect temperature information within the deposition chamber, and a controller configured to determine the amount of tension compensation for the mask plate based on the difference between the temperature information and a preset temperature threshold.
[0075] Optionally, the collector may include a temperature sensor.
[0076] Optionally, a mapping table may be used between the difference between temperature information and a preset temperature threshold, and the tension compensation amount. The corresponding tension compensation amount may be retrieved based on the difference between temperature information and the preset temperature threshold, and then tension may be applied to the mask plate. The use of a mapping table between the difference between temperature information and a preset temperature threshold and the tension compensation amount is a relatively common practice in the vapor deposition field, particularly in the panel vapor deposition field, and is therefore not explained further in this application.
[0077] Because two deposition regions and two evaporation sources are simultaneously installed in a single deposition chamber, the temperature inside the deposition chamber can become too high. If the mask plate is tensioned according to the tensioning regulations for when the temperature is not rising, the tensioning accuracy of the mask plate will decrease. In the deposition apparatus 100 according to the embodiment of this application, temperature information of the first deposition region 11 and the second deposition region 12 inside the deposition chamber can be collected by providing a collector. Since the tensioning requirements for the mask plate differ at different temperatures, the tensioning compensation amount for the mask plate is determined based on the difference between the temperature information and a preset temperature. This ensures tensioning accuracy, avoids the influence of temperature rise on tensioning accuracy, and optimizes the deposition effect.
[0078] As shown in Figure 7, on the other hand, the embodiments of this application further provide a vapor deposition system including the vapor deposition apparatus 100 according to each of the embodiments described above.
[0079] Selectively, the number of deposition apparatuses 100 included in the deposition system may be two, three or more, and may be specifically determined according to the number of film layers required for the deposition substrate. Taking a deposition OLED device as an example, if it is set that 12 film layers need to be deposited on the OLED device, the deposition system includes six deposition apparatuses 100, distributed along a second direction Y in pairs of two deposition apparatuses 100, and three pairs of deposition apparatuses 100 distributed along a first direction X, with two deposition apparatuses 100 in the same pair communicating via one transport chamber 200, and a transient chamber 300 connected between the transport chambers 200 of two adjacent pairs of deposition apparatuses 100.
[0080] To better understand, the following explanation will use the example that the six deposition apparatuses 100 are the first deposition apparatus 110, the second deposition apparatus 120, the third deposition apparatus 130, the fourth deposition apparatus 140, the fifth deposition apparatus 150, and the sixth deposition apparatus 160, respectively.
[0081] Two substrates to be deposited, a first substrate and a second substrate, are placed in the first deposition apparatus 110. In the first deposition apparatus 110, a first film layer can be formed on the first substrate and the second substrate by controlling the movement of the first evaporation source 31, and a second film layer can be formed on the first film layer formed on the first substrate and the second substrate by controlling the movement of the second evaporation source 32.
[0082] The first and second substrates, on which the first and second film layers have been formed, are sequentially transported through the transport chamber 200 to the second deposition apparatus 120, where the third and fourth film layers are formed on the second film layers of the first and second substrates, respectively. The first and second substrates, on which four film layers have been formed, are then transported through the transient chamber 300 between the two deposition apparatuses 100 to the third deposition apparatus 130, where the fifth and sixth film layers are formed. The deposition process for the OLED device is completed in this order until the eleventh and twelfth film layers are formed in the sixth deposition apparatus 160.
[0083] The deposition system according to the embodiment of this application includes the deposition apparatus 100 according to each of the embodiments described above. Therefore, two different film layers can be deposited on each of two different substrates using the same deposition apparatus 100. When depositing and molding an OLED device, 12 film layers can be deposited using only six deposition apparatuses 100. This reduces the overall cost of the deposition system, decreases the number of deposition apparatuses 100, and reduces the occupied space to nearly half of the original amount. Furthermore, it allows for the deposition of two different substrates at once, increasing the utilization rate of the deposition apparatus 100 and the production capacity of the deposition system to which it is applied.
[0084] As shown in Figures 8 to 14, according to another embodiment, the embodiment of this application is The present invention provides the deposition apparatus 100 of each of the above embodiments, and provides a provision step S100 in which the first evaporation source 31 is positioned in the first deposition region 11 and the second evaporation source 32 is positioned in the second deposition region 12, A placement step S200 is performed in which a first substrate to be deposited is placed in the first deposition region 11, and a second substrate to be deposited is placed in the second deposition region 12, The evaporation step S300 controls the movement of the first evaporation source 31 relative to the guide member 20 to sequentially deposit a first evaporation layer onto the first substrate and the second substrate, and the movement of the second evaporation source 32 relative to the guide member 20 to sequentially deposit a second evaporation layer onto the first evaporation layer of the first substrate and the first evaporation layer of the second substrate. The present invention further provides a vapor deposition method that includes the above.
[0085] Optionally, in step S100, the deposition apparatus 100 provided may be one, or of course, two or more. Optionally, the first evaporation source 31 and the second evaporation source 32 within the same deposition apparatus 100 may be located on the same side of the guide member 20 in the second direction Y, or on different sides of the guide member 20, and may be arranged diagonally.
[0086] Optionally, in step S200, if the deposition apparatus 100 includes a first mounting plate 40 and a second mounting plate 50, the first substrate to be deposited can be placed on the first mounting plate 40 and the second substrate to be deposited can be placed on the second mounting plate 50.
[0087] Selectively, in step S300, the first evaporation source 31 is controlled to move relative to the guide member 20 along the second direction Y to form a first vapor deposition layer on the first substrate, then the first evaporation source 31 is controlled to move to the second vapor deposition region 12, and the second evaporation source 32 is controlled to move to the first vapor deposition region 11, then the first evaporation source 31 is controlled to move relative to the guide member 20 along the second direction Y to form a first vapor deposition layer on the second substrate, and the second evaporation source 32 is controlled to move relative to the guide member 20 along the second direction Y to form a second vapor deposition layer on the first vapor deposition layer of the first substrate, and further, the second evaporation source 32 forms a second vapor deposition layer on the first vapor deposition layer of the second substrate.
[0088] In the deposition method according to the embodiment of this application, by using the deposition apparatus 100 according to the embodiment, two different film layers can be deposited on each of two different substrates using the same deposition apparatus 100, resulting in high deposition efficiency and utilization rate of production capacity.
[0089] As an optional embodiment, in the deposition method according to the embodiment of this application, the deposition step is: As shown in Figures 9 and 10, the process includes a preliminary evaporation step in which the first evaporation source 31 is controlled to form a first deposition layer on the first substrate, As shown in Figure 11, a first position adjustment step controls the first evaporation source 31 to enter the second deposition region 12 and the second evaporation source 32 to enter the first deposition region 11, As shown in Figure 12, the process includes a secondary evaporation step in which the first evaporation source 31 is controlled to deposit a first evaporation layer onto the second substrate, and the second evaporation source 32 is controlled to deposit a second evaporation layer onto the first evaporation layer formed on the first substrate, A first feed step involves unloading the first substrate on which the first and second deposition layers are formed, and loading the next first substrate to be deposited, As shown in Figure 13, a second position adjustment step controls the first evaporation source 31 to enter the first deposition region 11 and the second evaporation source 32 to enter the second deposition region 12, As shown in Figure 14, the re-deposition step involves controlling the first evaporation source 31 to deposit a first deposition layer on a newly added first substrate, and the second evaporation source 32 to deposit a second deposition layer on the first deposition layer formed on the second substrate. The process includes a second feed step of unloading a second substrate on which a first vapor-deposited layer and a second vapor-deposited layer are formed, and unloading a second substrate to be vapor-deposited next.
[0090] The first position adjustment step, secondary deposition step, first feed step, second position adjustment step, re-deposition step, and second feed step are repeatedly performed so that the first and second deposition layers are formed on any of the multiple first and second substrates to be deposited using the same deposition apparatus 100.
[0091] Selectively, in the pre-deposition step, the first evaporation source 31 is controlled to move along the second direction Y and scan the first substrate to deposit and form a first deposition layer on the first substrate.
[0092] 、
[0093] 。 English: Selectively, in the secondary deposition step, the first evaporation source 31 may be controlled to form a first deposition layer on the second substrate using the first evaporation source 31, and the second evaporation source 32 may be controlled to move relative to the guide member 20 along the second direction Y, respectively, in order to form a first deposition layer on the second substrate using the first evaporation source 31, and a second deposition layer on the first substrate using the second evaporation source 32. The first evaporation source 31 may be controlled synchronously so that the first deposition layer is deposited on the second substrate using the first evaporation source 31, and the second evaporation source 32 may be controlled stepwise so that the first deposition layer is deposited on the second substrate using the first evaporation source 31, and the second deposition layer is deposited on the first deposition layer on the first substrate using the second evaporation source 32. Selectively, the control is synchronous.
[0094] Selectively, the properties and functions of the materials ejected from the first evaporation source 31 and the second evaporation source 32 within the same deposition apparatus 100 are similar, thus eliminating concerns about contamination.
[0095] Optionally, in the first feed step, the first substrate on which the first and second deposition layers have been deposited is transferred to the next deposition apparatus 100, where a third and fourth deposition layer can be deposited. The next first substrate to be deposited may be positioned opposite the second substrate on which the first deposition layer has been formed in the first direction X. Optionally, the transfer of the first substrate on which the first and second deposition layers have been deposited and the transfer of the next first substrate to be deposited may be performed synchronously, or, of course, the first substrate on which the first and second deposition layers have been deposited may be transferred first, followed by the transfer of the next first substrate to be deposited.
[0096] 、 second position adjustment step は synchronous control
[0097] Selectively, in the re-deposition step, the first evaporation source 31 and the second evaporation source 32 are controlled to move relative to the guide member 20 along the second direction Y, the first evaporation source 31 deposits a first deposition layer onto the newly placed first substrate to be deposited, and the second evaporation source 32 deposits a second deposition layer onto the first deposition layer formed on the second substrate. The first evaporation source 31 may be synchronously controlled to deposit a first deposition layer onto the newly placed first substrate to be deposited, and the second evaporation source 32 may be synchronously controlled to deposit a second deposition layer onto the first deposition layer formed on the second substrate. Of course, the first evaporation source 31 may be synchronously controlled to deposit a first deposition layer onto the newly placed first substrate to be deposited, and the second evaporation source 32 may be synchronously controlled to deposit a second deposition layer onto the first deposition layer formed on the second substrate.
[0098] Selectively, in the second feed step, the second substrate on which the first and second deposition layers have been deposited is entered into the next deposition apparatus 100, where a third and fourth deposition layer, etc., can be deposited. The next second substrate to be deposited may be positioned opposite the first substrate on which the first deposition layer has been formed in the first direction X. The removal of the second substrate on which the first and second deposition layers have been deposited and the loading of the next second substrate to be deposited may be performed synchronously, or of course, the second substrate on which the first and second deposition layers have been deposited may be removed first, followed by the loading of the next second substrate to be deposited.
[0099] The first positioning step, the secondary deposition step, the first feed step, the second positioning step, the re-deposition step, and the second feed step can be repeated selectively until the first and second deposition layers are formed on all of the first and second substrates to be deposited.
[0100] In the deposition method according to the embodiment of this application, the deposition step adopts the above-described procedure and is advantageous for depositing two different film layers on each of two different substrates using the same deposition apparatus 100. Assuming that 10 layers of film require 240S each, five alignment and separation processes are saved, and it is predicted that the time required per layer will be shortened to 180S, resulting in a 25% improvement in production capacity utilization and higher deposition efficiency and production capacity utilization.
[0101] While this application has been described above with reference to preferred embodiments, various improvements can be made thereto without departing from the scope of this application, and components therein can be replaced with equivalents. In particular, each technical feature mentioned in each embodiment can be combined in any way, provided that no structural conflicts exist. This application is not limited to the specific embodiments disclosed herein, but includes all technical ideas that fall within the scope of the claims.
Claims
1. A substrate having a deposition chamber including a first deposition region and a second deposition region that are continuously distributed along a first direction, Guide members located in the first deposition region and the second deposition region, An evaporation source assembly provided on a guide member, comprising a first evaporation source and a second evaporation source, each movably connected to the guide member, capable of reciprocating between a first evaporation region and a second evaporation region, and capable of reciprocating relative to the guide member along a second direction intersecting the first direction, Includes, The guide member includes a closed ring-shaped edge guide portion located in the first deposition region and the second deposition region, and a central guide portion located within the ring-shaped chamber surrounded by the edge guide portion. The first evaporation source is connected to the edge guide and the central guide and is movable at least along the edge guide, and the second evaporation source is connected to the edge guide and the central guide and is movable at least along the edge guide. Vapor deposition equipment.
2. The evaporation source assembly and the guide member are switchable between a first state and a second state. In the first state, the first evaporation source is located in the first deposition region, and the second evaporation source is located in the second deposition region. In the second state described above, the first evaporation source is moved to the second deposition region, and the second evaporation source is moved to the first deposition region. The vapor deposition apparatus according to claim 1.
3. The first evaporation source and the second evaporation source are movable synchronously with respect to the guide member. The vapor deposition apparatus according to claim 2.
4. The edge guide section includes a first guide rail provided in pairs distributed along the first direction and extending along the second direction, and a second guide rail provided in pairs distributed along the second direction and extending along the first direction, wherein the first guide rail and the second guide rail are provided alternately and their start and end ends are connected to each other. The vapor deposition apparatus according to claim 1.
5. The first guide rail and the second guide rail, which are provided in a pair, form a rectangular frame-shaped guide rail. The vapor deposition apparatus according to claim 4.
6. The central guide section includes two or more third guide rails distributed along the first direction and each extending along the second direction and connected to the edge guide section, the first evaporation source being movably connected to at least one of the third guide rails, and the second evaporation source being movably connected to at least one of the third guide rails. The vapor deposition apparatus according to claim 4.
7. One end of the third guide rail in the second direction is connected to one of the pair of second guide rails, and the other end of the third guide rail in the second direction is connected to the other of the pair of second guide rails, and / or The third guide rail is provided parallel to each of the first guide rails, spaced apart in the first direction. The vapor deposition apparatus according to claim 6.
8. The central guide portion includes a pivot shaft, a main connecting shaft, a first connecting arm, and a second connecting arm, wherein the main connecting shaft is rotatably connected to the pivot shaft and rotatable about the pivot shaft as the pivot center, one end of the main connecting shaft is rotatably connected to the first connecting arm and the other end is rotatably connected to the second connecting arm, the first evaporation source is provided on the first connecting arm and slidably connected to the edge guide portion, and the second evaporation source is provided on the second connecting arm and slidably connected to the edge guide portion. The vapor deposition apparatus according to claim 1.
9. The main connecting shaft is rotatably connected to the pivot shaft at its longitudinal center. The vapor deposition apparatus according to claim 8.
10. One end of the first evaporation source is slidably fitted to the edge guide and the other end is fixedly connected to one end of the first connecting arm away from the main connecting shaft, and one end of the second evaporation source is slidably fitted to the edge guide and the other end is fixedly connected to one end of the second connecting arm away from the main connecting shaft. The vapor deposition apparatus according to claim 8.
11. The central guide section includes two or more third guide rails distributed along the first direction, each extending along the second direction and connected to the edge guide section; a pivot shaft located between two adjacent third guide rails; a main connecting shaft rotatably connected to the pivot shaft, rotatable about the pivot shaft, with one end rotatably connected to a first connecting arm and the other end rotatably connected to a second connecting arm; the first connecting arm; and the second connecting arm. The first evaporation source is provided on the first connecting arm and is slidably connected to the edge guide and one of the third guide rails, and the second evaporation source is provided on the second connecting arm and is slidably connected to the edge guide and the other of the third guide rails. The vapor deposition apparatus according to claim 1.
12. The deposition apparatus further includes a first mounting plate and a second mounting plate for mounting a substrate to be deposited, wherein the first mounting plate is provided in the first deposition region, the second mounting plate is provided in the second deposition region, and / or The deposition apparatus further includes a partition plate provided on the substrate that at least partially separates the first deposition region and the second deposition region. The vapor deposition apparatus according to claim 1.
13. The deposition apparatus further includes a collector arranged to collect temperature information within the deposition chamber, and a controller configured to determine the amount of tension compensation for the mask plate based on the difference between the temperature information and a preset temperature threshold. The vapor deposition apparatus according to claim 1.
14. A vapor deposition apparatus according to claim 1 is provided, comprising the steps of positioning a first evaporation source in a first vapor deposition region and a second evaporation source in a second vapor deposition region, A placement step in which a first substrate to be deposited is placed in a first deposition area, and a second substrate to be deposited is placed in a second deposition area, The vapor deposition step includes moving the first evaporation source relative to the guide member to sequentially vapor-deposit a first vapor deposition layer onto the first substrate and the second substrate, and controlling the second evaporation source to move relative to the guide member to sequentially vapor-deposit a second vapor deposition layer onto the first vapor deposition layer of the first substrate and the first vapor deposition layer of the second substrate, Vapor deposition method.
15. The aforementioned deposition step is A preliminary evaporation step in which a first evaporation source is controlled so that a first evaporation layer is deposited and formed on a first substrate, A first position adjustment step involves controlling the first evaporation source to enter the second deposition region and the second evaporation source to enter the first deposition region, A secondary evaporation step in which the first evaporation source is controlled so that a first evaporation layer is deposited on the second substrate, and a second evaporation layer is deposited on the first evaporation layer formed on the first substrate, A first feed step involves unloading the first substrate on which the first and second deposition layers are formed, and loading the next first substrate to be deposited, A second position adjustment step involves controlling the first evaporation source to enter the first deposition region and the second evaporation source to enter the second deposition region, A re-deposition step in which the first evaporation source is newly introduced to form a first deposition layer on a first substrate to be deposited, and the second evaporation source is controlled to form a second deposition layer on the first deposition layer formed on the second substrate, A second feed step involves unloading the second substrate on which the first and second deposition layers are formed, and loading the next second substrate to be deposited, Includes, The first position adjustment step, secondary deposition step, first feed step, second position adjustment step, re-deposition step, and second feed step are repeatedly performed so that a first deposition layer and a second deposition layer are formed on any of the multiple first substrates and second substrates to be deposited using the same deposition apparatus. The deposition method according to claim 14.