Manufacturing equipment for light-emitting devices

Abstract

Provided is a manufacturing apparatus capable of continuously processing steps from fabrication of an organic compound film to sealing. This manufacturing apparatus is capable of continuously performing a light emitting device patterning step and a step for sealing to prevent a top surface and side surfaces of an organic layer from being exposed to the atmosphere, and is capable of forming a fine light emitting device having high luminance and high reliability. Further, the manufacturing apparatus can be incorporated into in-line type manufacturing equipment in which apparatuses are arranged in the order of the steps for the light emitting device, and manufacture can thus be performed with a high throughput.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a manufacturing apparatus and method for a light-emitting device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices, methods of operating them, or methods of manufacturing them. [Background technology]

[0003] In recent years, there has been a growing demand for higher resolution display panels. Examples of devices requiring high-resolution display panels include smartphones, tablet devices, and notebook computers. Furthermore, stationary display devices such as television sets and monitors also require higher resolution and greater detail. Among the devices demanding the highest resolution are those used for virtual reality (VR) and augmented reality (AR).

[0004] Furthermore, typical examples of display devices applicable to display panels include liquid crystal displays, light-emitting devices equipped with light-emitting devices such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs), and electronic paper that displays information using electrophoretic methods.

[0005] For example, the basic structure of an organic EL element, which is a light-emitting element, consists of a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light can be obtained from the light-emitting organic compound. Because a display device using such an organic EL element does not require a backlight, which is necessary for liquid crystal displays and the like, it is possible to realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2002-324673 [Overview of the project] [Problems that the invention aims to solve]

[0007] In organic EL display devices capable of full-color display, two configurations are known: one combining a white light-emitting device and a color filter, and another in which R (red), G (green), and B (blue) light-emitting devices are formed on the same surface.

[0008] In terms of power consumption, the latter configuration is ideal, and currently, in the manufacturing of small and medium-sized panels, the light-emitting material is applied using metal masks. However, the process using metal masks has low alignment accuracy, so the area occupied by the light-emitting device within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks have challenges in increasing pixel density or luminescence intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting device using processes such as lithography. However, since the reliability of the materials constituting the light-emitting device deteriorates due to the intrusion of impurities from the atmosphere (water, oxygen, hydrogen, etc.), it is necessary to carry out multiple processes in an area with a controlled atmosphere.

[0010] Alternatively, when fabricating light-emitting devices using a vacuum deposition method with a metal mask, there is a challenge in that multiple manufacturing lines are required. For example, since the metal mask needs to be cleaned periodically, at least two or more manufacturing lines must be prepared, and while one manufacturing line is being maintained, other lines must be used for production. Therefore, when considering mass production, multiple manufacturing lines are required. Consequently, there is a challenge in that the initial investment required to introduce the manufacturing equipment is very large.

[0011] Therefore, one aspect of the present invention aims to provide a manufacturing apparatus for light-emitting devices that can continuously perform the processes from processing an organic compound film to sealing it without exposure to the atmosphere. Alternatively, one aspect of the present invention aims to provide a manufacturing apparatus for light-emitting devices that can continuously process the processes from forming the light-emitting device to sealing it. Alternatively, one aspect of the present invention aims to provide a manufacturing apparatus for light-emitting devices that can form a light-emitting device without using a metal mask. Alternatively, one aspect of the present invention aims to provide a method for manufacturing a light-emitting device.

[0012] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0013] One aspect of the present invention relates to an apparatus for manufacturing light-emitting devices.

[0014] One aspect of the present invention comprises a load chamber, a first etching apparatus, a plasma processing apparatus, a waiting chamber, a first film deposition apparatus, a second film deposition apparatus, a second etching apparatus, an unload chamber, a transfer chamber, and a transport device, wherein the transport device is provided in the transfer chamber, and the load chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, the first film deposition apparatus, the second film deposition apparatus, the second etching apparatus, and the unload chamber are each connected to the transfer chamber via gate valves, and the transport device comprises the load chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, and the first This is a manufacturing apparatus for light-emitting devices, which allows a workpiece to be transferred from any one of the first film deposition apparatus, the second film deposition apparatus, the second etching apparatus, and the unloading chamber to any one of the other, and loads a workpiece in which an organic compound film, a first inorganic film, and a resist mask are sequentially laminated on a glass substrate into the loading chamber, transports the workpiece in the order of the first etching apparatus, plasma processing apparatus, waiting room, first film deposition apparatus, second film deposition apparatus, and second etching apparatus, processes the organic compound film into island-shaped organic compound layers, forms a protective layer on the side surface of the organic compound layer, and then unloads the workpiece into the unloading chamber.

[0015] The first etching apparatus is a dry etching apparatus that can form a first inorganic film in an island-like manner using a resist mask as a mask, and then form an organic compound film in an island-like organic compound layer using the island-like first inorganic film as a mask.

[0016] Furthermore, the first etching apparatus may have an ashing function to remove the resist mask.

[0017] The plasma processing device can irradiate the sides of island-shaped organic compound layers with plasma generated from an inert gas, thereby cleaning the sides of the island-shaped organic compound layers.

[0018] The waiting room can accommodate multiple workpieces.

[0019] One of the first film-forming apparatus and the second film-forming apparatus is an ALD apparatus, and the other of the first film-forming apparatus and the second film-forming apparatus is a sputtering apparatus or a CVD apparatus, and a two-layer second inorganic film covering the island-shaped first inorganic film and the island-shaped organic compound layer can be formed. Further, the ALD apparatus can be a batch type.

[0020] The second etching apparatus is a dry etching apparatus, and a protective layer can be formed on the side surface of the island-shaped organic compound layer by anisotropically etching the second inorganic film.

[0021] The manufacturing apparatus of the above light-emitting device may be configured as a third cluster, a plurality of apparatuses performing a photolithography process of a resist mask may be configured as a second cluster, and a plurality of apparatuses performing a film-forming process of an organic compound film and a first inorganic film may be configured as a first cluster.

[0022] The first cluster, the second cluster, and the third cluster can be connected in this order.

[0023] Further, between the first cluster and the second cluster, and between the second cluster and the third cluster, the workpiece may be stored in a container controlled in an inert gas atmosphere and transferred.

[0024] Further, a manufacturing apparatus of a light-emitting device may be configured having three combinations of the first cluster, the second cluster, and the third cluster.

[0025] The first cluster may have a surface treatment apparatus. The surface treatment apparatus can use plasma generated from a gas containing halogen.

[0026] The first cluster can have one or more film-forming apparatuses selected from an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.

[0027] The second cluster can have a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus. [Effects of the Invention]

[0028] By using one aspect of the present invention, it is possible to provide a manufacturing apparatus for light-emitting devices that can continuously perform the processes from processing an organic compound film to sealing it without exposure to the atmosphere. Alternatively, it is possible to provide a manufacturing apparatus for light-emitting devices that can continuously process the processes from the formation of the light-emitting device to sealing it. Alternatively, it is possible to provide a manufacturing apparatus for light-emitting devices that can form a light-emitting device without using a metal mask. Alternatively, it is possible to provide a method for manufacturing a light-emitting device.

[0029] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0030] Figure 1 is a diagram illustrating the manufacturing equipment. Figures 2A and 2B illustrate the manufacturing apparatus. Figure 3 is a block diagram illustrating the manufacturing equipment. Figure 4 is a diagram illustrating the manufacturing equipment. Figure 5 is a diagram illustrating the manufacturing equipment. Figure 6 is a diagram illustrating the manufacturing equipment. Figure 7 is a diagram illustrating the manufacturing equipment. Figure 8 is a diagram illustrating the manufacturing equipment. Figure 9 is a block diagram illustrating the manufacturing equipment. Figure 10 is a diagram illustrating the manufacturing equipment. Figure 11 is a diagram illustrating the manufacturing equipment. Figure 12 is a diagram illustrating the manufacturing equipment. Figures 13A and 13B illustrate the loading and unloading of cassettes. Figure 13C illustrates the transport vehicle and transport container. Figures 14A to 14C illustrate the film deposition apparatus. Figures 15A to 15C illustrate the loading of substrates into the film deposition apparatus and the operation of the film deposition apparatus. Figures 16A and 16B illustrate the operation of the film deposition apparatus. Figure 16C illustrates the mask unit. Figures 17A to 17F illustrate a vacuum processing apparatus. Figure 18 is a diagram illustrating a display device. Figures 19A to 19C illustrate the display device. Figures 20A to 20F illustrate the method for manufacturing a display device. Figures 21A to 21F illustrate the method for manufacturing a display device. Figures 22A to 22F illustrate the method for manufacturing a display device. Figures 23A to 23F illustrate the method for manufacturing a display device. Figures 24A and 24B illustrate the method for manufacturing the display device. Figures 24C and 24D are enlarged views of Figure 24B. Figures 24E and 24F illustrate the display device. Figure 25 is a diagram illustrating the manufacturing equipment. [Modes for carrying out the invention]

[0031] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the invention. Therefore, the present invention is not to be interpreted as being limited to the descriptions of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are used in common between different drawings for the same parts or parts having similar functions, and repeated descriptions may be omitted. In addition, hatching of the same elements constituting the figures may be omitted or changed as appropriate between different drawings.

[0032] (Embodiment 1) In this embodiment, a manufacturing apparatus for a light-emitting device, which is one aspect of the present invention, will be described with reference to the drawings.

[0033] One aspect of the present invention is a manufacturing apparatus mainly used for forming display devices having light-emitting devices (also called light-emitting elements) such as organic EL elements. To miniaturize organic EL elements or increase the occupied area in pixels, it is preferable to use a lithography process. However, if impurities such as water, oxygen, and hydrogen enter the organic EL element, its reliability will be compromised. Therefore, it is necessary to seal the surface and sides of the patterned organic layer so that they are not exposed to the atmosphere, and to control the atmosphere to an inert gas with a low dew point from the manufacturing stage.

[0034] Furthermore, one embodiment of the present invention allows for the continuous formation of film-deposition, lithography, etching, and encapsulation processes for forming organic EL elements without exposure to the atmosphere. Therefore, it is possible to form high-brightness, high-reliability, and miniature organic EL elements. In addition, one embodiment of the present invention is an in-line type in which the equipment is arranged in the order of the processes for light-emitting devices, enabling high-throughput manufacturing.

[0035] Furthermore, large substrates such as glass substrates can be used as support substrates for forming organic EL elements. A glass substrate with pre-formed pixel circuits can be used as a support substrate, and organic EL elements can be formed on these circuits. For example, large rectangular substrates such as G5 to G10 can be used as glass substrates. However, the invention is not limited to these; round substrates, small substrates, etc., can also be used.

[0036] <Configuration Example 1> Figure 1 illustrates a manufacturing apparatus for a light-emitting device according to one aspect of the present invention. In this manufacturing apparatus, the process of manufacturing a light-emitting device can include the steps of processing an organic compound film into island-shaped organic compound layers and forming a protective layer for the organic compound layers. Therefore, since the organic compound layers, which are components of the light-emitting device, can be removed from the unloading chamber without being exposed to the atmosphere, a highly reliable light-emitting device can be formed.

[0037] The manufacturing apparatus includes a loading chamber LD, an unloading chamber ULD, a waiting room W, a transfer chamber TF, and multiple processing chambers. A conveying device 70 is provided in the transfer chamber TF.

[0038] The load chamber LD, the waiting chamber W, the unload chamber ULD, and several processing chambers are each connected to the transfer chamber TF via gate valves 20.

[0039] The conveying device 70 can transfer a workpiece from any one of the loading chamber LD, waiting chamber W, unloading chamber ULD, or individual processing chambers to any one of the other. In this specification, a group of devices that share conveying devices, etc., is referred to as a cluster. Furthermore, a workpiece is an object that is the target of processing in the manufacturing equipment, and is not limited to an unprocessed object, but also includes an object that has undergone multiple processing steps.

[0040] During operation of the manufacturing equipment, the load chamber LD and unload chamber ULD are controlled to either reduced pressure or atmospheric pressure. Additionally, the transfer chamber TF, waiting chamber W, and multiple processing chambers are controlled to reduced pressure.

[0041] Multiple processing chambers can be fitted with, for example, an etching apparatus E1, a plasma processing apparatus C, a film deposition apparatus D, and an etching apparatus E2. Furthermore, the workpiece fed into the manufacturing apparatus may have, for example, a laminate in which an organic compound film, an inorganic film, and a resist mask are sequentially layered.

[0042] The etching apparatus E1 can be a dry etching apparatus. The etching apparatus E1 can be used in the process of processing inorganic films and organic compound films, which are the workpieces, into island-shaped organic compound layers. The etching apparatus E1 may also be equipped with an ashing function. The ashing function can remove the resist mask.

[0043] The plasma processing apparatus C, for example, has a pair of parallel plate electrodes and can generate plasma by applying a voltage to these electrodes in an inert gas atmosphere under reduced pressure. By irradiating a workpiece with the plasma generated from the inert gas, reaction products and adsorbed gases remaining on the surface of the workpiece can be removed. As the inert gas, for example, noble gases such as high-purity helium, argon, and neon, nitrogen, or mixtures thereof can be used.

[0044] Furthermore, it is preferable to perform a vacuum bake treatment within the same apparatus either before or after the plasma treatment to remove surface-adsorbed water and other contaminants. The vacuum bake treatment is preferably performed within a temperature range that does not alter the organic compound layer, for example, 70°C to 120°C, more preferably 80°C to 100°C. The vacuum bake treatment may also be performed in the film deposition apparatus D before the next step of film deposition.

[0045] The waiting room W can hold multiple workpieces. For example, when the film deposition apparatus D is a batch processing type, processing can be carried out in the etching apparatus E1 and plasma processing apparatus C while multiple workpieces are kept waiting in the waiting room W, thereby improving throughput.

[0046] Furthermore, multiple waiting rooms W may be provided. For example, a waiting room W may be provided for waiting for workpieces after batch processing is completed in the film deposition apparatus D. By removing all workpieces from the film deposition apparatus D, the next processing can be performed in the film deposition apparatus D, thereby improving throughput.

[0047] The film deposition apparatus D can be, for example, a vapor deposition apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, or an ALD (Atomic Layer Deposition) apparatus. In particular, it is preferable to use an ALD apparatus, which has excellent duplication properties. The film deposition apparatus D can form protective films, such as inorganic films, that cover island-like organic compound layers. The film deposition apparatus D can deposit not only single layers but also two or more layers of different types of films. Furthermore, the film deposition apparatus D is not limited to a batch processing type but may also be a single-wafer processing type.

[0048] Etching apparatus E2 can be a dry etching apparatus capable of anisotropic etching. By anisotropically etching the protective film covering the island-shaped organic compound layer, a portion of the protective film can be left on the sides of the island-shaped organic compound layer. This portion of the protective film can function as a protective layer protecting the sides of the island-shaped organic compound layer.

[0049] By pre-applying an inorganic film or the like to the upper surface of the island-shaped organic compound layer, and by sequentially performing the processes in the etching apparatus E1, plasma processing apparatus C, film deposition apparatus D, and etching apparatus E2, a protective layer is applied to the side surface of the island-shaped organic compound layer, thereby sealing the island-shaped organic compound layer.

[0050] Therefore, even when the workpiece is removed from the unloading chamber and exposed to the atmosphere after processing, the island-shaped organic compound layer is not exposed to the atmosphere, enabling the formation of a highly reliable light-emitting device. Details of the manufacturing process for light-emitting devices using this manufacturing apparatus will be described later.

[0051] Furthermore, the manufacturing apparatus may have the configuration shown in Figure 2A. The manufacturing apparatus shown in Figure 2A differs from the manufacturing apparatus shown in Figure 1 in that it has a surface treatment apparatus S.

[0052] The surface treatment apparatus S can have the same configuration as the plasma treatment apparatus C and can perform surface treatment processes. The surface condition (such as wettability) of the workpiece may change due to processing in the etching apparatus E2. If the next process for the workpiece unloaded from the unloading chamber ULD is the deposition of an organic compound film, defects such as peeling may occur if the surface of the workpiece is not in an appropriate condition. Therefore, it is preferable to improve the surface condition of the workpiece by plasma treatment using a halogen-containing gas with the surface treatment apparatus S.

[0053] For example, when the surface to be coated is an oxide, the oxide surface may become hydrophilic after processing in etching apparatus E1 or E2. In this case, the surface can be made hydrophobic by replacing the hydrophilic groups on the surface of the coated surface with fluorine or fluoroalkyl groups using plasma treatment with a fluorine-based gas, thereby preventing peeling defects. Examples of fluorine-based gases that can be used include fluorocarbons such as CF4, C2F6, C4F6, C4F8, CHF3, SF6, and NF3. Helium, argon, or hydrogen may also be added to these gases.

[0054] Alternatively, a coating apparatus may be used as the surface treatment apparatus S. For example, methods such as spin coating, dip coating, spray coating, or methods of exposing the workpiece to an atmosphere of coating agent can be used. As the coating agent, for example, a silane coupling agent such as HMDS (Hexamethyldisilazane) can be used to hydrophobize the surface of the workpiece.

[0055] If the surface treatment apparatus S is not required, other equipment may be installed in its place. For example, throughput can be increased by using multiple devices with long processing times from among the etching apparatus E1, plasma treatment apparatus C, film deposition apparatus D, and etching apparatus E2, and processing them in parallel.

[0056] Furthermore, multiple film deposition apparatuses D may be provided. In the film deposition apparatus D of the manufacturing apparatus shown in Figure 1, two or more layers of different types of films may be deposited. Even with only one film deposition apparatus D, different films can be deposited by switching the source gas if the apparatus D is an ALD apparatus or a CVD apparatus, or by switching the target if it is a sputtering apparatus.

[0057] However, it is difficult to install different types of film deposition equipment, such as an ALD system and a sputtering system, in a single chamber. Therefore, multiple film deposition systems D may be installed.

[0058] Alternatively, other processes may be performed using other equipment installed at the location of the surface treatment apparatus S. Note that the surface treatment apparatus S may also be installed in the configuration shown in Figure 1. Furthermore, the surface treatment apparatus S may be installed in a separate cluster responsible for the film deposition process.

[0059] Furthermore, the manufacturing apparatus may have the configuration shown in Figure 2B. The manufacturing apparatus shown in Figure 2B differs from the manufacturing apparatus shown in Figure 1 in that it omits the waiting room W.

[0060] If the process time of the film deposition apparatus D does not become the rate-limiting factor in the overall throughput of the apparatus, the waiting room W can be omitted. For example, if the film deposition apparatus D is a single-wafer type and can deposit films at high speed, the configuration shown in Figure 2B can be used.

[0061] <Configuration Example 2> Figure 3 is a block diagram illustrating a manufacturing apparatus for a light-emitting device according to one aspect of the present invention. The manufacturing apparatus has multiple clusters arranged in a process order, and a part of it includes the manufacturing apparatus of the aforementioned Configuration Example 1 as a cluster. The substrate on which the light-emitting device is formed moves sequentially through the multiple clusters to undergo each process.

[0062] The manufacturing apparatus shown in Figure 3 is an example having clusters C1 to C18. Clusters C1 to C18 are connected in order, and a substrate 60a placed in cluster C1 can be removed from cluster C18 as a substrate 60b on which a light-emitting device has been formed.

[0063] Here, clusters C1, C3, C5, C7, C9, C11, C13, C15, and C17 have a group of equipment for performing processes under atmospheric control. Clusters C2, C4, C6, C8, C10, C12, C14, C16, and C18 have a group of equipment for performing vacuum processes (reduced pressure processes). The clusters shown in Configuration Example 1 can be used as clusters C4, C8, and C12. Note that the load chamber LD and unload chamber ULD shown in Configuration Example 1 can be replaced with load lock chambers as appropriate.

[0064] Clusters C1, C5, and C9 mainly contain equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly contain equipment for forming organic compounds for light-emitting devices. Clusters C3, C7, C11, and C15 mainly contain equipment for performing lithography processes. Clusters C4, C8, C12, and C14 mainly contain equipment for performing etching, ashing, and protective layer formation processes. Cluster C13 contains equipment for performing resin filling processes. Clusters C16 and C17 mainly contain equipment for performing etching processes. Cluster C18 mainly contains equipment for forming organic compounds for light-emitting devices and equipment for forming protective films to seal light-emitting devices.

[0065] Next, we will explain the details of clusters C1 to C18 using Figures 4 to 8.

[0066] <Cluster C1 to Cluster C4> Figure 4 is a top view illustrating clusters C1 through C4. Cluster C1 is connected to cluster C2 via load lock chamber B1. Cluster C2 is connected to cluster C3 via load lock chamber B2. Cluster C3 is connected to cluster C4 via load lock chamber B3. Cluster C4 is connected to cluster C5 (see Figure 5) via load lock chamber B4.

[0067] <Atmospheric pressure processing equipment A> Clusters C1 and C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly perform processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 is also provided with a load chamber LD.

[0068] The number of atmospheric pressure process units A in each cluster may be one or more, depending on the purpose. Furthermore, atmospheric pressure process units A may not be limited to processes under atmospheric pressure, but may be controlled to a slightly negative or positive pressure than atmospheric pressure. Also, if multiple atmospheric pressure process units A are provided, the atmospheric pressure may differ for each.

[0069] Valves for introducing inert gas (IG) are connected to transfer chambers TF1 and TF3 and atmospheric pressure process apparatus A, allowing the interiors to be controlled to an inert gas atmosphere. Nitrogen, or noble gases such as argon or helium can be used as the inert gas. Furthermore, it is preferable that the inert gas has a low dew point (e.g., below -50°C). Performing the process in a low-dew-point inert gas atmosphere prevents the inclusion of impurities, enabling the formation of highly reliable light-emitting devices.

[0070] The atmospheric pressure process apparatus A in cluster C1 can be a cleaning apparatus, a baking apparatus, or the like. For example, a spin cleaning apparatus or a hot plate type baking apparatus can be used. The baking apparatus may also be a vacuum baking apparatus.

[0071] The atmospheric pressure process apparatus A in cluster C3 can be an apparatus for performing lithography processes. For example, when performing a photolithography process, a resin (photoresist) coating apparatus, exposure apparatus, developing apparatus, baking apparatus, etc., can be used. When performing a nanoimprint lithography process, a resin (UV-curing resin, etc.) coating apparatus, nanoimprint apparatus, etc., can be used. In addition, depending on the application, a cleaning apparatus, wet etching apparatus, coating apparatus, resist stripping apparatus, etc., may be applied to atmospheric pressure process apparatus A.

[0072] Cluster C1 shows an example where atmospheric pressure process units A1 and A2 are each connected to transfer chamber TF1 via gate valves. Cluster C3 shows an example where atmospheric pressure process units A3 through A7 are each connected to transfer chamber TF3 via gate valves. By providing gate valves, it is possible to control pressure, inert gas species, and prevent cross-contamination.

[0073] The transfer chamber TF1 is connected to the load chamber LD via a gate valve. It is also connected to the load lock chamber B1 via another gate valve. A transport device 70a is provided in the transfer chamber TF1. The transport device 70a can transport substrates from the load chamber LD to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B1.

[0074] The transfer chamber TF3 is connected to the load lock chamber B2 via a gate valve. It is also connected to the load lock chamber B3 via another gate valve. A transport device 70c is provided in the transfer chamber TF3. The transport device 70c can transport substrates from the load lock chamber B2 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B3.

[0075] <Vacuum Processing Equipment V> Clusters C2 and C4 have vacuum processing equipment V. Cluster C2 has a transfer chamber TF2 and vacuum processing equipment V (vacuum processing equipment V1 to V5). Cluster C4 has a transfer chamber TF4 and vacuum processing equipment V (vacuum processing equipment V6 to V10).

[0076] The number of vacuum process units V in each cluster can be one or more, depending on the purpose. A vacuum pump VP is connected to the vacuum process unit V, and gate valves are provided between it and the transfer chambers TF (transfer chambers TF2, TF4). Therefore, different processes can be performed in parallel in each vacuum process unit V.

[0077] Furthermore, a vacuum process refers to processing in a controlled environment under reduced pressure. Therefore, vacuum processes include not only processing under high vacuum but also processes that involve introducing a process gas and controlling the pressure under reduced pressure.

[0078] Independent vacuum pumps VP are also provided in the transfer chambers TF2 and TF4, which prevents cross-contamination during the process carried out in the vacuum process apparatus V.

[0079] The vacuum process apparatus V in cluster C2 can be, for example, a surface treatment apparatus and a film deposition apparatus such as a vapor deposition apparatus, sputtering apparatus, CVD apparatus, or ALD apparatus. The surface treatment apparatus can have the functions of the surface treatment apparatus S described in Figure 2B, and in this case, a plasma treatment apparatus is preferred.

[0080] For CVD (Chemical Vapor Deposition) equipment, thermal CVD equipment utilizing heat or PECVD (Plasma Enhanced CVD) equipment utilizing plasma can be used. Similarly, for ALD (Advanced Laser Development) equipment, thermal ALD equipment utilizing heat or PEALD (Plasma Enhanced ALD) equipment utilizing plasma-excited reactant can be used.

[0081] The vacuum process apparatus V in cluster C4 can be the apparatus shown in Configuration Example 1, for example, a dry etching apparatus (with ashing function), a plasma processing apparatus (cleaning), an ALD apparatus, or a dry etching apparatus. Alternatively, the waiting room W shown in Figure 1 may be used.

[0082] In this embodiment, a device in which the substrate is placed with the film-depositing surface facing downwards is called a face-down type device. A device in which the substrate is placed with the film-depositing surface facing upwards is called a face-up type device. Face-down type devices include, for example, film deposition equipment such as vapor deposition equipment and sputtering equipment. Face-up type devices include film deposition equipment such as CVD equipment and ALD equipment, as well as dry etching equipment, ashing equipment, bake equipment, and lithography-related equipment. However, the manufacturing equipment in this embodiment may include equipment not limited to those described above. For example, a face-up type sputtering equipment can also be used.

[0083] The transfer chamber TF2 is connected to the load lock chamber B1 via a gate valve. It is also connected to the load lock chamber B2 via another gate valve. A transport device 70b is provided in the transfer chamber TF2. The transport device 70b can transport substrates placed in the load lock chamber B1 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B2.

[0084] The transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve. It is also connected to the load lock chamber B4 via another gate valve. The transfer chamber TF4 is equipped with a conveying device 70d. The conveying device 70d can convey materials from the load lock chamber B3 to the vacuum process apparatus V and then to the load lock chamber B4.

[0085] Load lock chambers B1, B2, B3, and B4 are equipped with valves for introducing a vacuum pump VP and inert gas (IG). Therefore, load lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when transporting a substrate from cluster C2 to cluster C3, the substrate can be loaded into load lock chamber B2 under reduced pressure, and then the substrate can be unloaded into cluster C3 after the load lock chamber B2 is changed to an inert gas atmosphere.

[0086] The transport devices 70a, 70b, 70c, and 70d each have a mechanism for transporting substrates by placing them on the hand portion. Since the transport devices 70a and 70c are operated under normal pressure, a vacuum suction mechanism or the like may be provided on the hand portion. Since the transport devices 70b and 70d are operated under reduced pressure, an electrostatic suction mechanism or the like may be provided on the hand portion.

[0087] In load lock chambers B1, B2, B3, and B4, stages 80a, 80b, 80c, and 80d are provided, on which the circuit board can be placed on the pins. Note that these are just examples, and stages with other configurations may be used.

[0088] <Cluster C5 to Cluster C8> Figure 5 is a top view illustrating clusters C5 through C8. Cluster C5 is connected to cluster C6 via load lock chamber B5. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C9 (see Figure 6) via load lock chamber B8.

[0089] The basic configuration of clusters C5 through C8 is the same as that of clusters C1 through C4, with cluster C5 corresponding to cluster C1, cluster C6 to cluster C2, cluster C7 to cluster C3, and cluster C8 to cluster C4. Note that the load chamber LD in cluster C1 is replaced by the load lock chamber B4 in cluster C5.

[0090] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0091] The following section will only describe the configuration. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C1 through C4 and load lock rooms B1 through B4.

[0092] Clusters C5 and C7 each have atmospheric pressure process equipment A. Cluster C5 has a transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly perform processes under atmospheric pressure. Cluster C7 has a transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0093] Clusters C6 and C8 have vacuum processing equipment V. Cluster C6 has a transfer chamber TF6 and vacuum processing equipment V (vacuum processing equipment V11 to V15). Cluster C8 has a transfer chamber TF8 and vacuum processing equipment V (vacuum processing equipment V16 to V20).

[0094] The transfer chamber TF5 is connected to the load lock chamber B4 via a gate valve. It is also connected to the load lock chamber B5 via another gate valve. A transport device 70e is provided in the transfer chamber TF5. The transport device 70e can transport substrates from the load lock chamber B4 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B5.

[0095] The transfer chamber TF6 is connected to the load lock chamber B5 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. The transfer chamber TF6 is equipped with a transport device 70f. The transport device 70f can transport substrates placed in the load lock chamber B5 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B6.

[0096] Furthermore, the transfer chamber TF7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transport device 70g is provided in the transfer chamber TF7. The transport device 70g can transport substrates from the load lock chamber B6 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B7.

[0097] The transfer chamber TF8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B8 via another gate valve. The transfer chamber TF8 is equipped with a transport device 70h. The transport device 70h can transport substrates from the load lock chamber B7 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B8.

[0098] In load lock chambers B5, B6, B7, and B8, stages 80e, 80f, 80g, and 80h are provided, allowing the circuit board to be placed on the pins.

[0099] <Cluster C9 to Cluster C12> Figure 6 is a top view illustrating clusters C9 through C12. Cluster C9 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 via load lock chamber B10. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 (see Figure 7) via load lock chamber B12.

[0100] The basic configuration of clusters C9 through C12 is the same as that of clusters C1 through C4, with cluster C9 corresponding to cluster C1, cluster C10 to cluster C2, cluster C11 to cluster C3, and cluster C12 to cluster C4. Note that the load chamber LD in cluster C1 is replaced by the load lock chamber B8 in cluster C9. Also, the vacuum process equipment V10 in cluster C4 is omitted in cluster C12.

[0101] Additionally, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0102] The following section will only describe the configuration. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C1 through C4 and load lock rooms B1 through B4.

[0103] Clusters C9 and C11 have atmospheric pressure process equipment A. Cluster C9 has a transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly perform processes under atmospheric pressure. Cluster C11 has a transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0104] Clusters C10 and C12 have vacuum processing equipment V. Cluster C10 has a transfer chamber TF10 and vacuum processing equipment V (vacuum processing equipment V21 to V25). Cluster C12 has a transfer chamber TF12 and vacuum processing equipment V (vacuum processing equipment V26 to V29).

[0105] The transfer chamber TF9 is connected to the load lock chamber B8 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transport device 70i is provided in the transfer chamber TF9. The transport device 70i can transport substrates from the load lock chamber B8 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B9.

[0106] The transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. The transfer chamber TF10 is equipped with a transport device 70j. The transport device 70j can transport substrates placed in the load lock chamber B9 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B10.

[0107] Furthermore, the transfer chamber TF11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transport device 70k is provided in the transfer chamber TF11. The transport device 70k can transport substrates from the load lock chamber B10 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B11.

[0108] The transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. The transfer chamber TF12 is equipped with a transport device 70m. The transport device 70m can transport substrates from the load lock chamber B11 to the vacuum process apparatus V and then to the load lock chamber B12.

[0109] In load lock chambers B9, B10, B11, and B12, stages 80i, 80j, 80k, and 80m are provided, allowing the circuit board to be mounted on the pins.

[0110] <Cluster C13 to C16> Figure 7 is a top view illustrating clusters C13 through C16. Cluster C13 is connected to cluster C14 via load lock chamber B13. Cluster C14 is connected to cluster C15 via load lock chamber B14. Cluster C15 is connected to cluster C16 via load lock chamber B15. Cluster C16 is connected to cluster C17 (see Figure 8) via load lock chamber B16.

[0111] Clusters C13 and C15 each have atmospheric pressure process equipment A. Cluster C13 has a transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22 to A26) that mainly perform processes under atmospheric pressure. Cluster C15 has a transfer chamber TF15 and atmospheric pressure process equipment A (atmospheric pressure process equipment A27 to A31) that mainly perform processes under atmospheric pressure.

[0112] The atmospheric pressure process apparatus A in cluster C13 can be an apparatus for performing a lithography process similar to that in cluster C3. The apparatus for performing the lithography process can perform resin filling.

[0113] The transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transport device 70n is provided in the transfer chamber TF13. The transport device 70n can transport substrates from the load lock chamber B12 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B13.

[0114] The basic configuration of cluster C15 is the same as that of cluster C3. The transfer chamber TF15 is connected to the load lock chamber B14 via a gate valve. It is also connected to the load lock chamber B15 via another gate valve. A transport device 70q is provided in the transfer chamber TF15. The transport device 70q can transport substrates from the load lock chamber B14 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B15.

[0115] Clusters C14 and C16 have vacuum process equipment V. Cluster C14 has a transfer chamber TF14 and vacuum process equipment V (vacuum process equipment V30 and V31). Cluster C16 has a transfer chamber TF16 and vacuum process equipment V (vacuum process equipment V32).

[0116] Examples of vacuum process equipment V that cluster C14 may include an ashing device, a dry etching device (with ashing function), an ALD device, a CVD device, a sputtering device, and the like.

[0117] The transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the load lock chamber B14 via another gate valve. A transport device 70p is provided in the transfer chamber TF14. The transport device 70p can transport substrates from the load lock chamber B13 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B14.

[0118] For example, a dry etching apparatus can be applied as the vacuum process equipment V in cluster C16.

[0119] The transfer chamber TF16 is connected to the load lock chamber B15 via a gate valve. It is also connected to the load lock chamber B16 via another gate valve. A transport device 70r is provided in the transfer chamber TF16. The transport device 70r can transport substrates from the load lock chamber B15 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B16.

[0120] Load lock chambers B13 to B16 are provided with stages 80n, 80p, 80q, and 80r on which substrates can be placed on pins. Load lock chambers B13 to B16 are also provided with a vacuum pump VP and valves for introducing inert gas (IG). Therefore, load lock chambers B13 to B16 can be controlled to a reduced pressure or inert gas atmosphere.

[0121] <Clusters C17, C18> Figure 8 is a top view illustrating clusters C17 and C18. Cluster C17 is connected to cluster C18 via load lock chamber B17.

[0122] Cluster C17 has atmospheric pressure process equipment A. Cluster C17 has a transfer chamber TF17 and atmospheric pressure process equipment A (atmospheric pressure process equipment A32 and A33) which mainly perform processes under atmospheric pressure.

[0123] The atmospheric pressure process apparatus A in cluster C17 can be an etching apparatus or a baking apparatus. A wet etching apparatus can be used as the etching apparatus. A dry etching apparatus can also be used; however, in that case, processing can be performed in cluster C16, and cluster C17 can be omitted. When using a dry etching apparatus, it is preferable to enable isotropic etching by lowering or eliminating the bias to the substrate.

[0124] The transfer chamber TF17 is connected to the load lock chamber B16 via a gate valve. It is also connected to the load lock chamber B17 via another gate valve. A transport device 70s is provided in the transfer chamber TF17. The transport device 70s can transport substrates from the load lock chamber B16 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B17.

[0125] Cluster C18 has a vacuum process apparatus V. Cluster C18 has a transfer chamber TF18 and vacuum process apparatus V (vacuum process apparatus V33 to V35) which mainly perform processes under reduced pressure.

[0126] The vacuum process equipment V in cluster C18 can include, for example, deposition equipment such as evaporation equipment, sputtering equipment, CVD equipment, ALD equipment, and opposing substrate bonding equipment.

[0127] The transfer chamber TF18 is connected to the load lock chamber B17 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. The transfer chamber TF18 is equipped with a transport device 71t. The transport device 71t can transport substrates from the load lock chamber B17 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the unload chamber ULD.

[0128] The load lock chamber B17 is provided with a stage 80s on which the substrate can be placed on the pins. The load lock chamber B17 is also equipped with a vacuum pump VP and a valve for introducing inert gas (IG). Therefore, the load lock chamber B17 can be controlled to either a reduced pressure or an inert gas atmosphere.

[0129] By using a manufacturing apparatus with the above configuration, a highly reliable light-emitting device sealed with a protective film can be formed.

[0130] For example, a series of processes can be carried out in an atmosphere-controlled apparatus, from forming light-emitting devices that emit a first color of light in clusters C1 to C4, forming light-emitting devices that emit a second color of light in clusters C5 to C8, forming light-emitting devices that emit a third color of light in clusters C9 to C12, filling an insulating layer in cluster C13, removing unwanted elements in clusters C14 to C17, and forming a protective film, etc., in cluster C18. Details of these processes will be described later.

[0131] Furthermore, when forming a light-emitting device that emits white light and a light-emitting device that emits first to third colors of light using a colored layer such as a color filter, a configuration in which clusters C1, C2, C3, C4, C13, C14, C15, C16, C17, and C18 are connected in order can be used.

[0132] <Configuration Example 3> Figure 9 is a block diagram illustrating a manufacturing apparatus for a light-emitting device different from that shown in Figure 3. The manufacturing apparatus shown in Figure 9 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, C14, C15, C16, C17, and C18, and is configured by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 3. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, C14, C15, C16, C17, and C18 are connected in order, and a substrate 60a placed in cluster C1 can be removed from cluster C18 as a substrate 60b on which a light-emitting device has been formed.

[0133] In the manufacturing apparatus shown in Figure 3, clusters C5 and C9 have a cleaning device and a baking device. The process preceding the cleaning process is the etching (dry etching) process. If residual gas components, residues, and deposits from this process do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, it becomes unnecessary to consider residual moisture in the substrate, and therefore the baking process can also be omitted. Accordingly, in some cases, the configuration shown in Figure 9 may be obtained by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 3. By omitting clusters C5 and C9, the total number of clusters and the number of load lock chambers can be reduced.

[0134] <Cluster C1 to Cluster C4> The configuration of clusters C1 through C4 can be the same as the configuration shown in Figure 4. However, load lock room B4 is connected to cluster C6.

[0135] <Clusters C6, C7, C8, C10> Figure 10 is a top view illustrating clusters C6, C7, C8, and C10. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 (see Figure 11) via load lock chamber B10.

[0136] The following describes the configuration of connections between clusters. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C6, C7, C8, and C10, and load lock rooms B4, B6, B7, B9, and B10 mentioned above.

[0137] The transfer chamber TF6 of cluster C6 is connected to the load lock chamber B4 via a gate valve. It is also connected to the load lock chamber B6 via another gate valve. A transport device 70f is provided in the transfer chamber TF6. The transport device 70f can transport substrates placed in the load lock chamber B4 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B6.

[0138] The transfer chamber TF7 of cluster C7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transport device 70g is provided in the transfer chamber TF7. The transport device 70g can transport substrates from the load lock chamber B6 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A to the load lock chamber B7.

[0139] The transfer chamber TF8 of cluster C8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transport device 70h is provided in the transfer chamber TF8. The transport device 70h can transport substrates from the load lock chamber B7 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B9.

[0140] The transfer chamber TF10 of cluster C10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. A transport device 70j is provided in the transfer chamber TF10. The transport device 70j can transport substrates placed in the load lock chamber B9 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V to the load lock chamber B10.

[0141] <Clusters C11, C12, C13, C14> Figure 11 is a top view illustrating clusters C11, C12, C13, and C14. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 via load lock chamber B12. Cluster C13 is connected to cluster C14 via load lock chamber B13.

[0142] The following describes the configuration of connections between clusters. For details on the clusters and load lock rooms, please refer to the descriptions of clusters C11, C12, C13, and C14, and load lock rooms B11, B12, and B13 mentioned above.

[0143] The transfer chamber TF11 of cluster C11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transport device 70k is provided in the transfer chamber TF11. The transport device 70k can transport substrates from the load lock chamber B10 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B11.

[0144] The transfer chamber TF12 of cluster C12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transport device 70m is provided in the transfer chamber TF12. The transport device 70m can transport substrates from the load lock chamber B11 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B12.

[0145] The transfer chamber TF13 of cluster C13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transport device 70n is provided in the transfer chamber TF13. The transport device 70n can transport substrates from the load lock chamber B12 to the atmospheric pressure process apparatus A. It can also transport substrates removed from the atmospheric pressure process apparatus A back to the load lock chamber B13.

[0146] The transfer chamber TF14 of cluster C14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the load lock chamber B14 via another gate valve. A transport device 70p is provided in the transfer chamber TF13. The transport device 70p can transport substrates from the load lock chamber B13 to the vacuum process apparatus V. It can also transport substrates removed from the vacuum process apparatus V back to the load lock chamber B14.

[0147] <Cluster C15 to Cluster C18> The configuration of clusters C15 to C18 can be the same as the configuration shown in Figures 7 and 8.

[0148] <Configuration Example 4> In Configuration Examples 1 to 3, examples of in-line manufacturing equipment were shown in which each cluster is connected via a load lock chamber. However, each cluster may also have its own independent load chamber LD and unload chamber ULD.

[0149] In this configuration, to prevent the workpiece from being exposed to the atmosphere, the workpiece can be sealed in an atmosphere-controlled container and the container can be moved between clusters.

[0150] Figure 12 shows an example where clusters C1, C2, C3, and C4 are configured as independent units, with each cluster equipped with a load chamber LD and an unload chamber ULD. The workpiece is stored in a cassette CT, and the cassette CT is placed in an atmosphere-controlled transport container BX and moved between the clusters.

[0151] Figure 13A illustrates the removal of the cassette CT in cluster C2. For clarity, the gate valve has been omitted, and the diagram shows the view through the chamber wall of the unloading chamber ULD.

[0152] First, with all workpieces stored in the cassette CT installed in the unloading chamber ULD, the atmosphere in the unloading chamber ULD is replaced with an inert gas atmosphere. Also, the inside of the transport container BX, located on the transport vehicle VE, is replaced with an inert gas atmosphere. At this time, it is preferable to maintain a positive pressure state in both the unloading chamber ULD and the transport container BX to prevent the inflow of air. However, the transport container BX only needs to be configured to prevent the inflow of air; it may also be evacuated to a negative pressure state.

[0153] Next, the outlet of the unloading chamber ULD and the inlet / outlet of the transport container BX are docked, and the cassette CT is transferred from the unloading chamber ULD to the transport container BX using the transfer device 200. Then, the inlet / outlet of the transport container BX is closed to maintain an inert gas atmosphere inside the transport container BX, and the transport vehicle VE moves to cluster C2.

[0154] Figure 13B illustrates the loading of cassette CTs into cluster C3. For clarity, the diagram shows the transport container BX with its walls transparent.

[0155] First, the atmosphere in the loading chamber LD is replaced with an inert gas atmosphere. Next, the loading port of the loading chamber LD and the loading port of the transport container BX are docked together, and the cassette CT is transferred from the transport container BX to the loading chamber LD using the transfer device 209. Then, the loading port of the loading chamber UL is closed, and processing in cluster C2 begins.

[0156] Figure 13C illustrates the transport container BX and the transport vehicle VE. The transport vehicle VE contains a controller 201, a power source 202, a battery 203, a gas cylinder 205 filled with inert gas, etc. The power source 202 is connected to the battery 203 and the wheels 204. The transport vehicle VE can be moved manually or automatically under the control of the controller 201.

[0157] The transport container BX has a gas inlet 210 and an outlet 211. The inlet 210 is connected to a gas cylinder 205 via a valve 206. The outlet 211 is connected to a valve 207. One or both of valves 206 and 207 are conductance valves, which can control the pressure inside the transport container BX to a positive pressure with an inert gas. It is preferable to use nitrogen or argon as the inert gas.

[0158] Furthermore, the transport container BX has an outlet 208 and a transfer device 209. The form of the outlet 208 is not limited, and for example, a door type, a shutter type, etc., can be used.

[0159] The transfer device 209 can transfer the cassette CT. In the explanation of Figures 12A and 12B, the transfer device 200 of the unloading chamber ULD was used for unloading to the transport container BX, and the transfer device 209 of the transport container BX was used for loading to the loading chamber LD. However, either the transfer device 200 or the transfer device 209 may be used to perform these operations. Furthermore, the system may be configured without either the transfer device 200 or the transfer device 209.

[0160] Although clusters C1 to C4 were used as examples above, the configuration of making each cluster independent can also be applied to clusters C5 to C18. Furthermore, configuration example 4 can be combined with parts of configuration examples 1 to 3.

[0161] <Configuration of the film deposition apparatus> Figure 14A illustrates a vacuum process apparatus V (face-down type film deposition apparatus) in which the substrate to be deposited on is placed with the deposition surface facing downwards. Here, film deposition apparatus 30 is shown as an example. For clarity, the diagram shows the chamber wall as if it were transparent, and the gate valve is omitted.

[0162] The film deposition apparatus 30 includes a film deposition material supply unit 31, a mask unit 32, and a stage 50 for setting the substrate 60. The film deposition material supply unit 31 is, for example, the part where the deposition source is installed if the film deposition apparatus 30 is a vapor deposition apparatus. Also, if the film deposition apparatus 30 is a sputtering apparatus, it is the part where the target (cathode) is installed.

[0163] Details of stage 50 are shown in the exploded view of Figure 14B. Stage 50 has a configuration in which a cylinder unit 33, an electromagnet unit 34, and an electrostatic adsorption unit 35 are superimposed in that order. The cylinder unit 33 has a plurality of cylinders 40. The cylinders 40 have the function of moving a cylinder rod, which is connected to a pusher pin 41, up and down.

[0164] The pusher pin 41 is inserted into a through hole 42 provided in the electromagnet unit 34 and the electrostatic adsorption unit 35. The tip of the pusher pin 41 contacts the substrate 60 with the movement of the cylinder 40, allowing the substrate 60 to be raised and lowered. Figure 14A shows the substrate 60 placed on the raised pusher pin 41.

[0165] Although Figure 14B shows a configuration in which one pusher pin 41 is connected to one cylinder 40, a configuration in which multiple pusher pins 41 are connected to one cylinder 40 is also possible. Furthermore, the number and position of the pusher pins 41 can be appropriately determined so as not to interfere with the hand portion of the conveying device.

[0166] The electromagnet unit 34 can generate a magnetic force when energized and has the function of pressing the mask jig, described later, firmly against the substrate 60. It is preferable that the mask jig be made of a ferromagnetic material such as stainless steel.

[0167] The electrostatic adsorption unit 35 has the function of generating adsorption by applying a voltage from the internal electrodes of the electrostatic adsorption unit 35 to the substrate 60, causing the charges in the electrostatic adsorption unit 35 and the charges in the substrate 60 to attract each other. Therefore, unlike vacuum adsorption mechanisms, it is possible to adsorb the substrate even under vacuum. Furthermore, it is preferable that the electrostatic adsorption unit be made of dielectric ceramics or the like and not contain ferromagnetic materials.

[0168] A rotating mechanism 36, such as a motor, is connected to the first end face of the stage 50 and the second end face opposite the first end face, allowing the stage 50 to be inverted vertically. Here, the combination of the stage 50 and the rotating mechanism 36 can be called a substrate inversion device.

[0169] Furthermore, as shown in Figure 14C, the mask unit 32 is provided with a lifting mechanism 37 connected to the first end face of the mask unit 32 and the second end face opposite the first end face. The mask unit 32 has a mask jig and an alignment mechanism, which allows the mask jig to be aligned and tightly attached to the substrate 60.

[0170] Next, the process from loading the substrate into the film deposition apparatus 30 to the film deposition process will be explained using Figures 15A to 16B. Note that for clarity, the chamber wall and gate valve, etc., are omitted from the illustrations in Figures 15A to 16B.

[0171] First, with the electrostatic adsorption unit 35 of the stage 50 facing upwards, the substrate 60, which is placed on the hand portion of the transport device 70, is moved onto the electrostatic adsorption unit 35. Then, the substrate 60 is raised by the pusher pins 41. Alternatively, the hand portion of the transport device 70 is lowered and the substrate 60 is placed on the raised pusher pins 41 (see Figure 15A).

[0172] Next, the pusher pin 41 is lowered, the substrate 60 is placed on the electrostatic adsorption unit 35, and the electrostatic adsorption unit 35 is operated to adsorb the substrate 60 (see Figure 15B).

[0173] Next, the stage 50 is rotated by the rotating mechanism 36, and the substrate 60 is inverted (see Figures 15C and 16A).

[0174] Next, the mask unit 32 is raised by the lifting mechanism 37, and the mask jig is aligned and brought into contact with the substrate 60. Then, the electromagnet unit 34 is energized to make the mask jig tightly adhere to the substrate 60 (see Figure 16B).

[0175] Figure 16C shows the mask jig 39 of the mask unit 32. Circuits and the like are pre-formed on the surface of the substrate 60, and the substrate 60 and the mask jig 39 are brought into close contact to prevent film deposition in unwanted areas. The mask unit 32 has an alignment mechanism including a camera 45, which can adjust the position (X, Y, θ directions) between the area on the substrate 60 where film deposition is required and the opening of the mask jig 39.

[0176] After performing the film deposition process in the state shown in Figure 16B, the substrate can be removed by performing the operations in the reverse order described above.

[0177] A substrate inversion device only needs to be installed in film deposition equipment that requires inversion of the substrate (face-down type film deposition equipment). Therefore, there is no need to install a substrate inversion mechanism in the substrate transport device or load lock chamber, which can reduce the overall cost of the equipment. In particular, it is useful in manufacturing equipment where face-down type equipment (film deposition equipment) and face-up type equipment (film deposition equipment, lithography equipment, etc.) are mixed, as in one embodiment of the present invention.

[0178] Figures 17A to 17F show examples of the configuration of a film deposition apparatus applicable to the vacuum process apparatus V. Figure 17A is a vacuum deposition apparatus, which has a substrate holder 51 for placing the substrate 60, a deposition source 52 such as a crucible, and a shutter 53. The exhaust port 54 is connected to a vacuum pump. Film deposition can be performed by heating the deposition source under reduced pressure to evaporate or sublimate the film deposition material, and then opening the shutter.

[0179] Figure 17B shows a sputtering apparatus, which has an upper electrode 58 on which the substrate 60 is placed, a lower electrode 56 on which the target 57 is placed, and a shutter 53. The gas inlet 55 is connected to a sputtering gas supply source, and the exhaust port 54 is connected to a vacuum pump. For example, by applying DC power or RF power between the upper electrode 58 and the lower electrode 56 under reduced pressure containing a noble gas, the sputtering phenomenon occurs, and by opening the shutter, the material for the target 57 can be deposited on the surface of the substrate 60.

[0180] Figure 17C shows a plasma CVD apparatus, which has an upper electrode 58 with a gas inlet 55 and a shower plate 59, and a lower electrode 56 on which a substrate 60 is placed. The gas inlet 55 is connected to a source of raw material gas, and the exhaust port 54 is connected to a vacuum pump. By introducing raw material gas under reduced pressure and applying high-frequency power or the like between the upper electrode 58 and the lower electrode 56, the raw material gas can be decomposed and the target material can be deposited on the surface of the substrate 60.

[0181] Figure 17D shows a dry etching apparatus, which has an upper electrode 58 and a lower electrode on which a substrate 60 is placed. The gas inlet 55 is connected to an etching gas supply source, and the exhaust port 54 is connected to a vacuum pump. By introducing etching gas under reduced pressure and applying high-frequency power or the like between the upper electrode 58 and the lower electrode 56, the etching gas is activated, and an inorganic or organic film formed on the substrate 60 can be etched. Ashing apparatuses and plasma processing apparatuses can also be configured similarly.

[0182] Figure 17E shows a waiting room, which has a substrate holder 62 for housing multiple substrates 60. The exhaust port 54 is connected to a vacuum pump, and the substrates 60 are kept under reduced pressure. The number of substrates 60 that can be stored in the substrate holder 62 can be appropriately determined considering the processing time before and after each step.

[0183] Figure 17F shows an ALD apparatus, which illustrates a batch-type configuration. The ALD apparatus has a heater 61, a gas inlet 55 connected to a supply source such as a precursor, and an exhaust port 54 connected to a vacuum pump. Multiple substrates 60 are housed in a substrate holder 63 and placed on the heater 61. Under reduced pressure, a precursor or oxidizing agent is alternately introduced through the gas inlet 55, allowing for repeated film deposition on the substrates 60 at the atomic layer level. In the case of a single-wafer system, the substrate holder 62 can be omitted. A thermal CVD apparatus can also be configured similarly.

[0184] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0185] (Embodiment 2) This embodiment describes a specific example of an organic EL element that can be manufactured using a manufacturing apparatus for a light-emitting device according to one aspect of the present invention.

[0186] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0187] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0188] Furthermore, light-emitting devices can be broadly classified into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission, one should select light-emitting layers such that the light-emitting colors of each of the two light-emitting layers are complementary colors. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a configuration that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0189] A tandem device preferably has a pair of electrodes and two or more light-emitting units between the pair of electrodes, with each light-emitting unit containing one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0190] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0191] Furthermore, a tandem structure device may have a configuration (such as BB, GG, RR) in which light-emitting layers emit light of the same color. Although a tandem structure, which obtains light emission from multiple layers, requires a high voltage for light emission, the current required to obtain the same light emission intensity as a single structure is smaller. Therefore, in a tandem structure, the current stress per light-emitting unit can be reduced, and the device lifespan can be extended.

[0192] <Example Configuration> Figure 18 shows a schematic top view of a display device 100 manufactured using a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The display device 100 has multiple red light-emitting devices 110R, multiple green light-emitting devices 110G, and multiple blue light-emitting devices 110B. In Figure 18, the labels R, G, and B are added within the light-emitting area of ​​each light-emitting device to simplify the distinction between them.

[0193] Light-emitting devices 110R, 110G, and 110B are each arranged in a matrix. Figure 18 shows a so-called stripe arrangement in which light-emitting devices of the same color are arranged in one direction. Note that the arrangement method of the light-emitting devices is not limited to this, and arrangement methods such as delta arrangement, zigzag arrangement, pentile arrangement, or other arrangements may be used.

[0194] It is preferable to use EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as light-emitting devices 110R, 110G, and 110B. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials.

[0195] Figure 19A is a schematic cross-sectional view corresponding to the dashed line A1-A2 in Figure 18.

[0196] Figure 19A shows cross-sections of light-emitting devices 110R, 110G, and 110B. Light-emitting devices 110R, 110G, and 110B are each mounted on a pixel circuit and have a pixel electrode 111 and a common electrode 113.

[0197] The light-emitting device 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R has a luminescent organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting device 110G has a luminescent organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting device 110B has a luminescent organic compound that emits light having a peak in at least the blue wavelength range. Note that a structure in which the EL layers 112R, EL layer 112G, and EL layer 112B each emit light of different colors may be called an SBS structure.

[0198] Each of the EL layers 112R, 112G, and 112B may have, in addition to a layer containing a light-emitting organic compound (light-emitting layer), one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0199] A pixel electrode 111 is provided for each light-emitting device. A common electrode 113 is provided as a continuous layer common to each light-emitting device. A conductive film that is transparent to visible light is used on either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective to visible light is used on the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission type display device can be made. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission type display device can be made. Furthermore, by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission type display device can be made. In this embodiment, an example of manufacturing a top-emission type display device will be described.

[0200] The EL layer 112R, EL layer 112G, and EL layer 112B each have a region that is in contact with the upper surface of the pixel electrode 111.

[0201] As shown in Figure 19A, a gap is provided between the two EL layers in light-emitting devices of different colors. It is preferable that the EL layers 112R, 112G, and 112B are arranged so that they do not touch each other. This effectively prevents current from flowing through two adjacent EL layers and causing unintended light emission. Therefore, contrast can be enhanced, and a display device with high display quality can be realized.

[0202] Furthermore, a protective layer 121 is provided on the common electrode 113, covering the light-emitting devices 110R, 110G, and 110B. The protective layer 121 has the function of preventing impurities from diffusing into each light-emitting device from above. Alternatively, the protective layer 121 has the function of capturing (also called gettering) impurities (typically impurities such as water and hydrogen) that may enter each light-emitting device.

[0203] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0204] The pixel electrode 111 is electrically connected to either the source or the drain of the transistor 116. For example, the transistor 116 can be a transistor having a metal oxide in its channel formation region (hereinafter referred to as an OS transistor). OS transistors have higher mobility and superior electrical properties than amorphous silicon. Furthermore, OS transistors do not require the crystallization process found in the manufacturing process of polycrystalline silicon and can be formed in wiring processes, etc. Therefore, they can be formed on a transistor 115 (hereinafter referred to as a Si transistor) having silicon in its channel formation region formed on the substrate 60 without using bonding processes, etc.

[0205] Here, transistor 116 is a transistor that constitutes the pixel circuit. Transistor 115 is a transistor that constitutes the drive circuit for the pixel circuit, etc. In other words, since the pixel circuit can be formed on the drive circuit, a narrow-bezel display device can be formed.

[0206] As the semiconductor material used in the OS transistor, a metal oxide with an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more, can be used.

[0207] OS transistors exhibit extremely low off-current characteristics, such as a few yA / μm (current value per 1 μm channel width), due to the large energy gap of the semiconductor layer. At room temperature, the off-current value of an OS transistor per 1 μm channel width is 1 aA (1 × 10⁻¹⁶). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0208] Furthermore, OS transistors have characteristics that differ from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, enabling the formation of highly reliable circuits with high voltage resistance. In addition, variations in electrical characteristics caused by crystalline non-uniformity, which are problematic in Si transistors, are less likely to occur in OS transistors.

[0209] The semiconductor layer of the OS transistor can be a film represented by an In-M-Zn-based oxide containing, for example, indium, zinc, and one or more of metals such as M (aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can typically be formed by a sputtering method. Alternatively, it may be formed using the ALD (Atomic Layer Deposition) method.

[0210] For example, as the In-M-Zn-based oxide, an oxide (IGZO) containing indium (In), gallium (Ga), and zinc (Zn) can be used. Alternatively, an oxide (IAZO) containing indium (In), aluminum (Al), and zinc (Zn) may be used. Alternatively, an oxide (IAGZO) containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) may be used.

[0211] The atomic ratio of the metal elements of the sputtering target used to form the In-M-Zn-based oxide by the sputtering method preferably satisfies In≧M and Zn≧M. As such an atomic ratio of the metal elements of the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 1:3:2, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, etc., or a composition in the vicinity thereof is preferable. Note that the atomic ratio of the semiconductor layer to be formed includes fluctuations of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target.

[0212] As the semiconductor layer, an oxide semiconductor with a low carrier density is used. For example, the semiconductor layer has a carrier density of 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×1013 / cm 3 More preferably 1 × 10 11 / cm 3 More preferably 1 × 10 10 / cm 3 It is less than 1 × 10 -9 / cm 3 Oxide semiconductors with the carrier densities described above can be used. Such oxide semiconductors are called high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. These oxide semiconductors have a low defect level density and are considered to be stable oxide semiconductors.

[0213] However, this is not limited to these, and an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor required. Furthermore, in order to obtain the required semiconductor characteristics of the transistor, it is preferable to set the carrier density and impurity concentration of the semiconductor layer, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. to appropriate values.

[0214] The display device shown in Figure 19A has an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely low leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current). Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, and a high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display with almost no light leakage that may occur when displaying black (also called a true black display).

[0215] Figure 19A illustrates a configuration in which the light-emitting layers of the R, G, and B light-emitting elements are different from each other, but the invention is not limited to this. For example, as shown in Figure 19B, an EL layer 112W that emits white light may be provided, and colored layers 114R (red), 114G (green), and 114B (blue) may be provided superimposed on the EL layer 112W to form light-emitting devices 110R, 110G, and 110B, thereby enabling colorization.

[0216] The EL layer 112W can have a tandem structure in which EL layers that emit red, green, and blue light are connected in series. Alternatively, a structure in which light-emitting layers that emit red, green, and blue light are connected in series may be used. As the colored layers 114R, 114G, and 114B, for example, red, green, and blue color filters can be used.

[0217] Alternatively, as shown in Figure 19C, the transistor 115 on the substrate 60 may be used to form a pixel circuit, and either the source or drain of the transistor 115 may be electrically connected to the pixel electrode 111.

[0218] <Example of manufacturing method> The following describes an example of a method for manufacturing a light-emitting device that can be produced using a manufacturing apparatus according to one embodiment of the present invention. Here, the light-emitting device of the display device 100 shown in the above configuration example will be used as an example.

[0219] Figures 20A to 24B are schematic cross-sectional diagrams of each step in the manufacturing method of the light-emitting device exemplified below. Note that in Figures 20A to 24B, transistor 116, which is a component of the pixel circuit shown in Figure 19A, and transistor 115, which is a component of the driving circuit, are omitted from the illustration.

[0220] Thin films (insulating films, semiconductor films, conductive films, etc.) that constitute a display device can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, atomic layer deposition (ALD), and the like. CVD methods include plasma chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD is metal-organic chemical vapor deposition (MOCVD). A manufacturing apparatus in one embodiment of the present invention may have an apparatus for forming thin films using the above methods.

[0221] Furthermore, methods such as spin coating, dip coating, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used for forming thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device and for coating resins used in the lithography process. A manufacturing apparatus according to one embodiment of the present invention may have an apparatus for forming thin films using the above method. A manufacturing apparatus according to one embodiment of the present invention may also have an apparatus for coating resins using the above method.

[0222] Furthermore, when processing the thin film that constitutes the display device, photolithography or the like can be used. Alternatively, the thin film may be processed using nanoimprint lithography. In addition, a method of directly forming island-shaped thin films using a film deposition method with a shielding mask may be used in combination.

[0223] There are two main methods for processing thin films using photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and finally removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0224] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0225] For etching thin films, dry etching methods, wet etching methods, and the like can be used. In one embodiment of the present invention, the manufacturing apparatus may have an apparatus for processing thin films using the above methods.

[0226] <Preparation of substrate 60> As the substrate 60, a substrate having at least sufficient heat resistance to withstand subsequent heat treatment can be used. When using an insulating substrate as the substrate 60, glass substrates, quartz substrates, sapphire substrates, ceramic substrates, organic resin substrates, etc., can be used. In addition, semiconductor substrates such as single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, and SOI substrates can be used. Note that the shape of the substrate is not limited to a wafer; a rectangular substrate can also be used.

[0227] For example, when using a glass substrate, it can be applied to large substrate sizes such as the 3rd generation (substrate size, 550mm x 650mm), 3.5th generation (substrate size, 600mm x 720mm), 6th generation (1500mm x 1850mm), 8th generation (2160mm x 2460mm), and 10th generation (2850mm x 3050mm).

[0228] In particular, it is preferable to use a substrate 60 on which a semiconductor circuit including semiconductor elements such as Si transistors is formed on the semiconductor substrate or insulating substrate. It is preferable that the semiconductor circuit constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0229] <Formation of pixel circuit and pixel electrode 111> Next, multiple pixel circuits are formed on the substrate 60, and pixel electrodes 111 are formed on each pixel circuit (see Figure 20A). First, a conductive film to be the pixel electrode 111 is deposited, a resist mask is formed by photolithography, and unnecessary parts of the conductive film are removed by etching. After that, the pixel electrode 111 can be formed by removing the resist mask.

[0230] For the pixel electrode 111, it is preferable to use a material with high reflectivity across the entire wavelength range of visible light (for example, silver or aluminum). A pixel electrode 111 formed from such a material can be described as an electrode with light reflectivity. This not only improves the light extraction efficiency of the light-emitting device but also enhances color reproduction.

[0231] Furthermore, it is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is transparent and reflective to visible light (a semi-transparent / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device. Therefore, the pixel electrode 111 may have a laminated structure of the above-mentioned highly reflective material and a translucent conductive film (such as indium tin oxide).

[0232] Subsequently, a baking process is performed to remove the moisture remaining on the surface of the pixel electrode 111. The baking process can be carried out using a vacuum baking apparatus or a film-forming apparatus. The conditions for vacuum baking are preferably 100 °C or higher.

[0233] Subsequently, surface treatment of the pixel electrode 111 is performed. For example, using a plasma treatment apparatus, plasma is generated with a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. By this plasma treatment, the adhesion between the pixel electrode 111 and the EL film formed in the next step can be enhanced, and peeling defects can be suppressed.

[0234] <Formation of EL film 112Rf> Subsequently, an EL film 112Rf, which will later become the EL layer 112R, is formed on the pixel electrode 111.

[0235] The EL film 112Rf has a film containing at least a red light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated. The EL film 112Rf can be formed, for example, by a vapor deposition method or a sputtering method, etc. Note that it is not limited to this, and the above-described film-forming methods can be appropriately used.

[0236] <Formation of protective film 125Rf> Subsequently, a protective film 125Rf, which will later become the protective layer 125R, is formed on the EL film 112Rf (see Fig. 20B).

[0237] The protective layer 125R is a temporary protective layer used to prevent the deterioration and disappearance of the EL layer 112R in the manufacturing process of the light-emitting device, and is also called a sacrificial layer. The protective film 125Rf is preferably formed by a film-forming method that has high barrier properties against moisture, etc., and is less likely to damage the organic compound during film formation. Also, it is preferably formed of a material that can use an etchant that is less likely to damage the organic compound in the etching process. For the protective film 125Rf, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.

[0238] For example, it is preferable to use a metal such as tungsten, an inorganic insulating film such as aluminum oxide, or a laminated film thereof. Alternatively, a laminated structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method may be used. In the case of such a structure, the film formation temperature when forming the film by the ALD method and the sputtering method is preferably from room temperature to 120°C or lower, more preferably from room temperature to 100°C or lower, because the influence on the EL layer can be reduced, which is suitable. Further, when the protective layer 125R is a laminated film, it is preferable to reduce the stress of the laminated film. Specifically, by setting the stress of each layer constituting the laminated film to be -500 MPa or more and +500 MPa or less, more preferably -200 MPa or more and +200 MPa or less, process troubles such as film peeling and peeling can be suppressed.

[0239] <Formation of resist mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting device 110R (see FIG. 20C). The resist mask 143a can be formed in a lithography process.

[0240] <Formation of protective layer 125R> Subsequently, using the resist mask 143a as a mask, the protective film 125Rf is etched to form an island-shaped protective layer 125R. A dry etching method or a wet etching method can be used for the etching process. Thereafter, the resist mask 143a is removed by ashing or a resist stripping solution (see FIG. 20D).

[0241] <Formation of EL layer 112R> Subsequently, using the protective layer 125R as a mask, the EL film 112Rf is etched to form an island-shaped EL layer 112R (see FIG. 20E). A dry etching method is preferably used for the etching process. Further, cleaning is performed on the side surface of the EL layer 112R using a plasma processing apparatus or the like.

[0242] <Formation of protective films 126Rf and 128Rf> Subsequently, protective films 126Rf and 128Rf that cover the EL layer 112R and the protective layer 125R are formed (see Fig. 20F). For the protective films 126Rf and 128Rf, an inorganic film similar to the protective film 125Rf can be used. The protective films 126Rf and 128Rf are preferably formed by the ALD method, which has excellent coating properties. Alternatively, the protective film 126Rf can be formed by the ALD method, and the protective film 128Rf can be formed by CVD or sputtering. For example, the protective film 126Rf can be aluminum oxide, and the protective film 128Rf can be silicon nitride. By laminating different types of films, a tough protective film can be formed.

[0243] <Formation of protective layers 126R and 128R> Subsequently, the protective films 126Rf and 128Rf are anisotropically etched using a dry etching method, and the protective layers 126R and 128R are formed by leaving a part of the protective films 126Rf and 128Rf (see Fig. 21A). The protective layers 126R and 128R are formed on the side surfaces of the EL layer 112R, the protective layer 125R, and the pixel electrode 111, but it is sufficient if at least the side surface of the EL layer 112R can be covered.

[0244] <Formation of EL film 112Gf> Subsequently, a baking process is performed to remove the moisture remaining on the surface of the pixel electrode 111. The baking process can be performed using a vacuum baking apparatus or a film forming apparatus. Here, the conditions for vacuum baking are set to 100°C or lower, preferably 90°C or lower, more preferably 80°C or lower, so as not to damage the EL layer 112R. When vacuum baking is performed at 80°C, it has been found from the measurement results of the temperature programmed desorption gas analysis (TDS) that by heating for 30 minutes or more, the desorbed moisture (H2O) is sufficiently reduced.

[0245] Subsequently, surface treatment of the exposed pixel electrode 111 is performed. For example, using a plasma processing apparatus, plasma is generated with a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Gf that will become the EL layer 112G is formed on the pixel electrode 111.

[0246] The EL film 112Gf has a film containing at least a green light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0247] <Formation of the protective film 125Gf> Subsequently, a protective film 125Gf that will later become the protective layer 125G is formed on the EL film 112Gf (see FIG. 21B). The protective film 125Gf can be formed of the same material as the protective film 125Rf.

[0248] <Formation of the resist mask 143b> Subsequently, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting device 110G (see FIG. 21C). The resist mask 143b can be formed in a lithography process.

[0249] <Formation of the protective layer 125G> Subsequently, using the resist mask 143b as a mask, the protective film 125Gf is etched to form an island-shaped protective layer 125G. A dry etching method or a wet etching method can be used for the etching process. Then, the resist mask 143b is removed by ashing or a resist stripping solution (see FIG. 21D).

[0250] <Formation of the EL layer 112G> Subsequently, using the protective layer 125G as a mask, the EL film 112Gf is etched to form an island-shaped EL layer 112G (see FIG. 21E). It is preferable to use a dry etching method for the etching process. Further, cleaning is performed on the side surface of the EL layer 112G using a plasma processing apparatus or the like.

[0251] <Formation of protective films 126Gf and 128Gf> Subsequently, protective films 126Gf and 128Gf that cover the EL layer 112G and the protective layer 125G are formed (see Fig. 21F). For the protective film 126Gf, an inorganic film similar to the protective film 126Rf can be used. Also, for the protective film 128Gf, an inorganic film similar to the protective film 128Rf can be used.

[0252] <Formation of protective layer 126G> Subsequently, the protective films 126Gf and 128Gf are anisotropically etched using a dry etching method, and by leaving a part of the protective films 126Gf and 128Gf, the protective layer 126G and the protective layer 128G are formed (see Fig. 22A). Note that the protective layer 126G and the protective layer 128G are formed on the side surfaces of the EL layer 112G, the protective layer 125G, and the pixel electrode 111, but it is sufficient if at least the side surface of the EL layer 112G can be covered. Also, the protective layer 126G and the protective layer 128G may be formed so as to overlap with the protective layer 126R and the protective layer 128R.

[0253] <Formation of EL film 112Bf> Subsequently, a baking process for removing moisture remaining on the surface of the pixel electrode 111 is performed. The baking process can be carried out using a vacuum baking apparatus or a film forming apparatus. Here, the conditions for vacuum baking are carried out at 100°C or lower, preferably 90°C or lower, more preferably 80°C or lower so as not to damage the EL layers 112R and 112G.

[0254] Subsequently, surface treatment of the exposed pixel electrode 111 is performed. For example, using a plasma treatment apparatus, plasma is generated with a fluorine-based gas such as CF4 and irradiated onto the surface of the pixel electrode 111. Then, an EL film 112Bf that becomes the EL layer 112B is formed on the pixel electrode 111.

[0255] The EL film 112Bf has a film containing at least a blue light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0256] <Formation of protective film 125Bf> Subsequently, a protective film 125Bf, which will later become the protective layer 125B, is formed on the EL film 112Bf (see Fig. 22B). The protective film 125Bf can be formed of the same material as the protective film 125Rf.

[0257] <Formation of resist mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting device 110B (see Fig. 22C). The resist mask 143c can be formed in a lithography process.

[0258] <Formation of protective layer 125B> Subsequently, using the resist mask 143c as a mask, the protective film 125Bf is etched to form an island-shaped protective layer 125B. A dry etching method or a wet etching method can be used in the etching process. Then, the resist mask 143c is removed by ashing or a resist stripping solution (see Fig. 22D).

[0259] <Formation of EL layer 112B> Subsequently, using the protective layer 125B as a mask, the EL film 112Bf is etched to form an island-shaped EL layer 112B (see Fig. 22E). It is preferable to use a dry etching method in the etching process. Further, cleaning such as the side surface of the EL layer 112B is performed using a plasma processing apparatus or the like.

[0260] <Formation of protective films 126Bf and 128Bf> Subsequently, protective films 126Bf and 128Bf that cover the EL layer 112B and the protective layer 125B are formed (see Fig. 22F). For the protective film 126Bf, an inorganic film similar to the protective film 126Rf or the like can be used. Also, for the protective film 128Bf, an inorganic film similar to the protective film 128Rf or the like can be used.

[0261] <Formation of insulating layer 127> Next, an insulating layer 127 is formed to fill the spaces between the pixel electrodes and the EL layers (see Figure 23A). By forming the insulating layer 127, steps can be eliminated, preventing the conductive film (cathode) formed on the EL layer in a later step from being cut off. In addition, by covering the vicinity of the sides of the EL layer with the insulating layer 127, the intrusion of impurities into the EL layer and peeling of the EL layer can be prevented. The insulating layer 127 can also be described as an interlayer insulating layer provided between the conductive film and the pixel electrode 111.

[0262] It is preferable to use an insulating layer having an organic material for the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin, such as an ultraviolet-curable resin, can also be used as the insulating layer 127. The photosensitive resin may be either a positive-type or negative-type material, and may be formed using a process similar to the lithography process, for example, by using a photoresist.

[0263] Furthermore, after the insulating layer 127 is formed, it is preferable to bake it at a temperature that does not damage the EL layer in order to reduce the moisture and oxygen contained in the insulating layer 127.

[0264] Subsequently, ashing treatment is performed to planarize the insulating layer 127 (see FIG. 23B). Since the aperture ratio decreases if there is a region where the insulating layer 127 overlaps with each EL layer, it is preferable that there is no insulating layer 127 on each EL layer. When the insulating layer 127 is formed, if there is no insulating layer 127 on each EL layer, this step is unnecessary. Also, if the insulating layer 127 on each EL layer can be removed, the upper surface of the insulating layer 127 may be slightly concave or convex as shown by the dashed line in the figure.

[0265] <Formation of barrier film 130f> Subsequently, a barrier film 130f is formed on the protective film 128Bf and the insulating layer 127 (see FIG. 23C). By providing the barrier film 130f, outgassing from the insulating layer 127 can be suppressed, and the reliability of the light-emitting device can be further improved. The barrier film 130f can be formed of an inorganic film similar to the protective film 125Rf by CVD method, ALD method, sputtering method, or the like.

[0266] <Formation of resist mask 143d> Subsequently, a resist mask 143d is formed on the insulating layer 127 (see FIG. 23D). The resist mask 143d can be formed in a lithography process. The resist mask 143d is preferably formed so as not to overlap with each EL layer.

[0267] <Formation of barrier layer 130 and protective layer 128B> Subsequently, using a dry etching method, the barrier film 130f and the protective film 128Bf are etched to form the barrier layer 130 and the protective layer 128B (see FIG. 23E). <??

[0268] <Formation of protective layer 126B and removal of protective layers 125R, 125G, 125B> Next, the protective film 126Bf is etched using the barrier layer 130 as a mask to form the protective layer 126B. Furthermore, protective layers 125R, 125G, and 125B are removed (see Figure 23F). Although protective layers 126B and 128B are formed on the sides of the EL layer 112B, the sides of protective layer 125B, and the sides of the pixel electrode 111, it is sufficient if they cover at least the sides of the EL layer 112B. Also, protective layers 126B and 128B may be formed so as to overlap with protective layers 126G and 128G.

[0269] For etching a portion of the protective film 126Bf and removing the protective layers 125R, 125G, and 125B, it is preferable to use a wet etching method using an etchant suitable for the constituent materials. Furthermore, it is preferable to perform a bake treatment after this process. The bake process can be carried out using a vacuum bake apparatus or a film deposition apparatus for the next process. Here, the vacuum bake conditions are set to 100°C or lower, preferably 90°C or lower, and more preferably 80°C or lower, so as not to damage the EL layers 112R, 112G, and 112B. TDS measurement results have shown that when vacuum baking is performed at 80°C, heating for 90 minutes or more sufficiently reduces the amount of water (H2O) to be removed. In the bake process, vacuum baking is preferable to atmospheric baking because it allows for the removal of water and other degassing at lower temperatures. There are no particular limitations on the ultimate vacuum pressure for vacuum baking; it should be lower than atmospheric pressure.

[0270] <Common electrode formation> Next, a conductive layer that will become the common electrode 113 of the light-emitting device is formed on the EL layer 112R, EL layer 112G, EL layer 112B, and barrier layer 130 that were exposed in the previous step (see Figure 24A). As the common electrode 113, a thin metal film that semi-transmits light emitted from the light-emitting layer (e.g., an alloy of silver and magnesium) or a translucent conductive film (e.g., indium tin oxide, or an oxide containing one or more elements such as indium, gallium, or zinc) can be used, either as a single film or a laminate of both. The common electrode 113 made of such a film can be said to be a light-transmitting electrode. A vapor deposition apparatus and / or a sputtering apparatus can be used in the process of forming the conductive layer that will become the common electrode 113.

[0271] Furthermore, to improve reliability, before forming the common electrode 113, a layer having one of the functions of an electron injection layer, electron transport layer, charge generation layer, hole transport layer, or hole injection layer may be provided as a common layer on the EL layer 112R, EL layer 112G, and EL layer 112B.

[0272] By having a light-reflecting electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission type light-emitting device is formed.

[0273] <Protective layer formation> Next, a protective layer 121 is formed on the common electrode 113 (see Figure 24B). A sputtering apparatus, a CVD apparatus, or an ALD apparatus can be used for the process of forming the protective layer 121.

[0274] The above is an example of a method for manufacturing a light-emitting device that can be produced using a manufacturing apparatus according to one embodiment of the present invention. Figure 24C is an enlarged view of region a shown in Figure 24B. Figure 24D is an enlarged view of region b shown in Figure 24B.

[0275] Furthermore, as shown in Figure 24E, the light-emitting device that can be manufactured using the manufacturing apparatus according to one embodiment of the present invention may have a pixel electrode and an EL layer of equal area. Alternatively, as shown in Figure 24F, the area of ​​the EL layer may be larger than the area of ​​the pixel electrode. Such a configuration can further increase the aperture ratio.

[0276] <Example of manufacturing equipment> Figure 25 shows an example of a manufacturing apparatus that can be used in the manufacturing process from the formation of the EL film 112Rf to the formation of the protective layer 121 described above. The basic configuration of the manufacturing apparatus shown in Figure 25 is the same as that of the manufacturing apparatus shown in Figures 3 to 8.

[0277] Clusters C1 through C18 are described in detail below. Figure 25 is a schematic perspective view of the entire manufacturing apparatus, omitting illustrations of utilities and gate valves. Furthermore, the transfer chambers TF1 through TF18 and load lock chambers B1 through B17 are shown with their interiors visualized for clarity.

[0278] <Cluster C1> Cluster C1 includes a load chamber LD and atmospheric pressure process equipment A1 and A2. Atmospheric pressure process equipment A1 can be a cleaning device, and atmospheric pressure process equipment A2 can be a baking device. In cluster C1, a cleaning process is performed before the deposition of the EL film 112Rf.

[0279] <Cluster C2> Cluster C2 comprises vacuum process apparatuses V1 to V5. Vacuum process apparatuses V1 to V5 are surface treatment apparatuses for surface treatment of the substrate (pixel electrode) for forming the EL film 112Rf, deposition apparatuses for forming the EL film 112Rf, and film deposition apparatuses (e.g., sputtering apparatus, ALD apparatus, etc.) for forming the protective film 125Rf. For example, vacuum process apparatus V1 can be used as a plasma treatment apparatus, and vacuum process apparatus V2 can be used as an apparatus for forming the organic compound layer that will become the light-emitting layer (R). Vacuum process apparatuses V3 and V4 can be assigned to form organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum process apparatus V5 can be assigned to form the protective film 125Rf.

[0280] <Cluster C3> Cluster C3 includes atmospheric pressure process equipment A3 to A7. Atmospheric pressure process equipment A3 to A7 can be used in the lithography process. For example, atmospheric pressure process equipment A3 can be a resin (photoresist) coating device, atmospheric pressure process equipment A4 can be a pre-bake device, atmospheric pressure process equipment A5 can be an exposure device, atmospheric pressure process equipment A6 can be a developing device, and atmospheric pressure process equipment A7 can be a post-bake device. Alternatively, atmospheric pressure process equipment A5 may be a nanoimprint device.

[0281] <Cluster C4> Cluster C4 includes vacuum process apparatuses V6 to V10. For example, vacuum process apparatus V6 can be a dry etching apparatus for forming the EL layer 112R. Vacuum process apparatus V7 can be a plasma processing apparatus for cleaning the sides of the EL layer 112R. Vacuum process apparatus V8 can be a waiting room. Vacuum process apparatus V9 can be an ALD apparatus for depositing protective films 126Rf and 128Rf. Vacuum process apparatus V10 can be a dry etching apparatus for forming protective layers 126R and 128R.

[0282] <Cluster C5> Cluster C5 has atmospheric pressure process apparatuses A8 and A9. The atmospheric pressure process apparatus A8 can be a cleaning apparatus, and the atmospheric pressure process apparatus A9 can be a baking apparatus. In cluster C5, a cleaning process before forming the EL film 112Gf is performed.

[0283] <Cluster C6> Cluster C6 has vacuum process apparatuses V11 to V15. The vacuum process apparatuses V11 to V15 are a surface treatment apparatus for performing surface treatment of the base (pixel electrode) for forming the EL film 112Gf, a vapor deposition apparatus for forming the EL film 112Gf, and a film forming apparatus (for example, a sputtering apparatus, an ALD apparatus, etc.) for forming the protective film 125Gf. For example, the vacuum process apparatus V11 can be a plasma treatment apparatus, and the vacuum process apparatus V12 can be a forming apparatus for the organic compound layer that becomes the light emitting layer (G). Also, the vacuum process apparatuses V13 and V14 can be assigned to forming apparatuses for organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Further, the vacuum process apparatus V15 can be assigned to a forming apparatus for the protective film 125Gf.

[0284] <Cluster C7> Cluster C7 has atmospheric pressure process apparatuses A10 to A14. The atmospheric pressure process apparatuses A10 to A14 can be apparatuses used in the lithography process. The assignment of the apparatuses can be the same as that of cluster C3.

[0285] <Cluster C8> Cluster C8 has vacuum process apparatuses V16 to V20. For example, the vacuum process apparatus V16 can be a dry etching apparatus for forming the EL layer 112G. The vacuum process apparatus V17 can be a plasma treatment apparatus for cleaning the side surface etc. of the EL layer 112G. The vacuum process apparatus V18 can be a standby chamber. The vacuum process apparatus V19 can be an ALD apparatus for forming the protective films 126Gf and 128Gf. The vacuum process apparatus V20 can be a dry etching apparatus for forming the protective layers 126G and 128G.

[0286] <Cluster C9> Cluster C9 includes atmospheric pressure process devices A15 and A16. Atmospheric pressure process device A15 can be a cleaning device, and atmospheric pressure process device A16 can be a baking device. In cluster C9, a cleaning process is performed before the deposition of the EL film 112Bf.

[0287] <Cluster C10> Cluster C10 includes vacuum process equipment V21 to V25. Vacuum process equipment V21 to V25 are surface treatment equipment for surface treatment of the substrate (pixel electrode) for forming the EL film 112Bf, deposition equipment for forming the EL film 112Bf, and film deposition equipment (e.g., sputtering equipment, ALD equipment, etc.) for forming the protective film 125Bf. For example, vacuum process equipment V21 can be used as a plasma treatment equipment, and vacuum process equipment V22 can be used as an equipment for forming the organic compound layer that will become the light-emitting layer (B). Vacuum process equipment V23 and V24 can be assigned to equipment for forming organic compound layers such as electron injection layers, electron transport layers, charge generation layers, hole transport layers, and hole injection layers. Vacuum process equipment V25 can be assigned to equipment for forming the protective film 125Bf.

[0288] <Cluster C11> Cluster C11 includes atmospheric pressure process equipment A17 to A21. Atmospheric pressure process equipment A17 to A21 can be equipment used in the lithography process. The equipment allocation can be the same as in Cluster C3.

[0289] <Cluster C12> Cluster C12 includes vacuum process equipment V26 to V29. For example, vacuum process equipment V26 can be a dry etching apparatus for forming the EL layer 112B. Vacuum process equipment V27 can be a plasma processing apparatus for cleaning the sides of the EL layer 112G, etc. Vacuum process equipment V28 can be a waiting room. Vacuum process equipment V29 can be an ALD apparatus for depositing protective films 126Bf and 128Bf.

[0290] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 to A26. Atmospheric pressure process equipment A22 to A26 can be equipment used for the lithography process. The equipment allocation can be the same as in cluster C3.

[0291] <Cluster C14> Cluster C14 includes vacuum process apparatuses V30 and V31. Vacuum process apparatus V30 can be an ashing apparatus for planarizing the insulating layer 127, or a dry etching apparatus with ashing function. Vacuum process apparatus V31 can be a film deposition apparatus (e.g., sputtering apparatus, ALD apparatus, CVD apparatus, etc.) for forming the barrier film 130f.

[0292] <Cluster C15> Cluster C15 includes atmospheric pressure process equipment A27 to A31. Atmospheric pressure process equipment A27 to A31 can be used for the lithography process. The equipment allocation can be the same as in Cluster C3.

[0293] <Cluster C16> Cluster C16 has a vacuum processing apparatus V32. The vacuum processing apparatus V32 can be a dry etching apparatus for etching the barrier film 130f and the protective film 128Bf.

[0294] <Cluster C17> Cluster C17 includes atmospheric pressure process equipment A32 and A33. Atmospheric pressure process equipment A32 can be a wet etching apparatus. In atmospheric pressure process equipment A32, etching processes are performed on the protective film 126Bf and the protective layers 125R, 125G, and 125B.

[0295] <Cluster C18> Cluster C18 includes vacuum processing apparatuses V33 to V35 and an unloading chamber ULD. Vacuum processing apparatus V33 can be assigned to form any of the following organic compound layers (e.g., an evaporation apparatus): an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, or a hole injection layer. Vacuum processing apparatus V34 can be a film deposition apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. Vacuum processing apparatus V35 can be a film deposition apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, a separate vacuum processing apparatus V may be provided to provide multiple different film deposition apparatuses (e.g., evaporation apparatus, ALD apparatus, etc.) to form the common electrode 113 and the protective layer 121 as a laminated film.

[0296] Tables 1 and 2 summarize the elements corresponding to the processes, processing equipment, and manufacturing methods shown in Figures 20A to 24B, using the manufacturing apparatus shown in Figure 25. Note that the loading and unloading of substrates into and out of the load lock chamber and each apparatus are omitted from the description.

[0297] [Table 1]

[0298] [Table 2]

[0299] A manufacturing apparatus according to one embodiment of the present invention has the function of automatically processing steps No. 1 to No. 72 shown in Tables 1 and 2.

[0300] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. [Explanation of symbols]

[0301] A: Atmospheric pressure processing equipment, A1: Atmospheric pressure processing equipment, A2: Atmospheric pressure processing equipment, A3: Atmospheric pressure processing equipment, A4: Atmospheric pressure processing equipment, A5: Atmospheric pressure processing equipment, A6: Atmospheric pressure processing equipment, A7: Atmospheric pressure processing equipment, A8: Atmospheric pressure processing equipment, A9: Atmospheric pressure processing equipment, A10: Atmospheric pressure processing equipment, A11: Atmospheric pressure processing equipment, A12: Atmospheric pressure processing equipment, A13: Atmospheric pressure processing equipment, A14: Atmospheric pressure processing equipment, A15: Atmospheric pressure processing equipment, A16: Atmospheric pressure processing equipment, A17: Atmospheric pressure processing equipment, A18: Atmospheric pressure processing equipment, A19: Atmospheric pressure processing equipment Location, A20: Atmospheric pressure process equipment, A21: Atmospheric pressure process equipment, A22: Atmospheric pressure process equipment, A23: Atmospheric pressure process equipment, A24: Atmospheric pressure process equipment, A25: Atmospheric pressure process equipment, A26: Atmospheric pressure process equipment, A27: Atmospheric pressure process equipment, A28: Atmospheric pressure process equipment, A29: Atmospheric pressure process equipment, A30: Atmospheric pressure process equipment, A31: Atmospheric pressure process equipment, A32: Atmospheric pressure process equipment, A33: Atmospheric pressure process equipment, B1: Load lock chamber, B2: Load lock chamber, B3: Load lock chamber, B4: Load lock chamber, B5: Load lock chamber, B6: Load lock Room, B7: Load lock room, B8: Load lock room, B9: Load lock room, B10: Load lock room, B11: Load lock room, B12: Load lock room, B13: Load lock room, B14: Load lock room, B15: Load lock room, B16: Load lock room, B17: Load lock room, C: Plasma processing equipment, D: Thin film deposition equipment, C1: Cluster, C2: Cluster, C3: Cluster, C4: Cluster, C5: Cluster, C6: Cluster, C7: Cluster, C8: Cluster, C9: Cluster, C10: Cluster, C11: Cluster, C12: Cluster C13: Cluster, C14: Cluster, C15: Cluster, C16: Cluster, C17: Cluster, C18: Cluster, E1: Etching equipment, E2: Etching equipment, TF: Transfer room, TF1: Transfer room, TF2: Transfer room, TF3: Transfer room, TF4: Transfer room, TF5: Transfer room, TF6: Transfer room, TF7: Transfer room, TF8: Transfer room, TF9: Transfer room, TF10: Transfer room, TF11: Transfer room, TF12: Transfer room,TF13: Transfer chamber, TF14: Transfer chamber, TF15: Transfer chamber, TF16: Transfer chamber, TF17: Transfer chamber, TF18: Transfer chamber, V: Vacuum processing equipment, V1: Vacuum processing equipment, V2: Vacuum processing equipment, V3: Vacuum processing equipment, V4: Vacuum processing equipment, V5: Vacuum processing equipment, V6: Vacuum processing equipment, V7: Vacuum processing equipment, V8: Vacuum processing equipment, V9: Vacuum processing equipment, V10: Vacuum processing equipment, V11: Vacuum processing equipment, V12: Vacuum processing equipment, V13: Vacuum processing equipment Process equipment, V14: Vacuum process equipment, V15: Vacuum process equipment, V16: Vacuum process equipment, V17: Vacuum process equipment, V18: Vacuum process equipment, V19: Vacuum process equipment, V20: Vacuum process equipment, V21: Vacuum process equipment, V22: Vacuum process equipment, V23: Vacuum process equipment, V24: Vacuum process equipment, V25: Vacuum process equipment, V26: Vacuum process equipment, V27: Vacuum process equipment, V28: Vacuum process equipment, V29: Vacuum process equipment, V30: Vacuum process equipment, V31: Vacuum process equipment, V32: Vacuum process Equipment, V33: Vacuum process equipment, V34: Vacuum process equipment, V35: Vacuum process equipment, W: Waiting room, 20: Gate valve, 30: Film deposition equipment, 31: Film deposition material supply unit, 32: Mask unit, 33: Cylinder unit, 34: Electromagnet unit, 35: Electrostatic adsorption unit, 36: Rotation mechanism, 37: Lifting mechanism, 39: Mask jig, 40: Cylinder, 41: Pusher pin, 42: Through hole, 45: Camera, 50: Stage, 51: Substrate holder, 52: Evaporation source, 53: Shutter, 54: Exhaust port, 55: Inlet, 56: Lower electrode, 57: Target, 58 : Upper electrode, 59: Shower plate, 60: Substrate, 60a: Substrate, 60b: Substrate, 61: Heater, 62: Substrate holder, 63: Substrate holder, 70: Conveyor device, 70a: Conveyor device, 70b: Conveyor device, 70c: Conveyor device, 70d: Conveyor device, 70e: Conveyor device, 70f: Conveyor device, 70g: Conveyor device, 70h: Conveyor device, 70i: Conveyor device, 70j: Conveyor device, 70k: Conveyor device, 70m: Conveyor device, 70n: Conveyor device, 70p: Conveyor device, 70q: Conveyor device, 70s: Conveyor device, 71t: Conveyor device, 80a: Stage, 80b: Stage, 80c: Stage,80d: Stage, 80e: Stage, 80f: Stage, 80g: Stage, 80h: Stage, 80i: Stage, 80j: Stage, 80k: Stage, 80m: Stage, 80n: Stage, 80p: Stage, 80q: Stage, 80r: Stage, 80s: Stage, 100: Display device, 110B: Light-emitting device, 110G: Light-emitting device, 110R: Light-emitting device S, 111: Pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: EL film, 112W: EL layer, 113: Common electrode, 114B: Coloring layer, 114G: Coloring layer, 114R: Coloring layer, 115: Transistor, 116: Transistor, 117: Transistor, 121: Protective layer, 125B: Protective layer, 125Bf: Protective layer 125G: Protective layer, 125Gf: Protective film, 125R: Protective layer, 125Rf: Protective film, 126B: Protective layer, 126Bf: Protective film, 126G: Protective layer, 126Gf: Protective film, 126R: Protective layer, 126Rf: Protective film, 127: Insulating layer, 128B: Protective layer, 128Bf: Protective film, 128G: Protective layer, 128Gf: Protective film, 128R: Protective layer, 128Rf: Protective film, 130: Burr A layer, 130f: barrier film, 143a: resist mask, 143b: resist mask, 143c: resist mask, 143d: resist mask, 200: transfer device, 201: controller, 202: power source, 203: battery, 204: wheels, 205: gas cylinder, 206: valve, 207: valve, 208: inlet / outlet, 209: transfer device, 210: inlet, 211: outlet,

Claims

1. It comprises a loading chamber, a first etching apparatus, a plasma processing apparatus, a waiting chamber, a first film deposition apparatus, a second film deposition apparatus, a second etching apparatus, an unloading chamber, a transfer chamber, and a transport apparatus. The transport device is provided in the transfer chamber, The load chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, the first film deposition apparatus, the second film deposition apparatus, the second etching apparatus, and the unload chamber are each connected to the transfer chamber via gate valves. The transfer device can transfer a workpiece from any one of the loading chamber, the first etching apparatus, the plasma processing apparatus, the waiting chamber, the first film deposition apparatus, the second film deposition apparatus, the second etching apparatus, and the unloading chamber to any one of the other. A workpiece in which an organic compound film, a first inorganic film, and a resist mask are sequentially laminated on a glass substrate is brought into the loading chamber. The workpiece is transported in the following order: the first etching apparatus, the plasma processing apparatus, the waiting room, the first film deposition apparatus, the second film deposition apparatus, and the second etching apparatus. A manufacturing apparatus for a light-emitting device, which processes the aforementioned organic compound film into island-shaped organic compound layers, forms a protective layer on the side surface of the organic compound layer, and then transports the workpiece to the unloading chamber.

2. In claim 1, The first etching apparatus is a dry etching apparatus, which forms the first inorganic film in an island shape using the resist mask as a mask, and processes the organic compound film into the island-shaped organic compound layer using the island-shaped first inorganic film as a mask, in order to manufacture a light-emitting device.

3. In claim 2, The first etching apparatus is a manufacturing apparatus for a light-emitting device having an ashing function to remove the resist mask.

4. In any one of claims 1 to 3, The plasma processing apparatus is a manufacturing apparatus for light-emitting devices that irradiates the side surface of the island-shaped organic compound layer with plasma generated from an inert gas to clean the side surface of the island-shaped organic compound layer.

5. In any one of claims 1 to 4, The waiting room is a manufacturing apparatus for light-emitting devices capable of accommodating multiple workpieces.

6. In any one of claims 1 to 5, A manufacturing apparatus for a light-emitting device, wherein one of the first and second film deposition apparatuses is an ALD apparatus, and the other of the first and second film deposition apparatuses is a sputtering apparatus or a CVD apparatus, and a two-layer structure second inorganic film covering the island-shaped first inorganic film and the island-shaped organic compound layer is formed.

7. In claim 6, The ALD apparatus is a batch-processing type manufacturing apparatus for light-emitting devices.

8. In claim 6 or 7, The second etching apparatus is a dry etching apparatus, and is a manufacturing apparatus for a light-emitting device that forms the protective layer on the side surface of the island-shaped organic compound layer by anisotropically etching the second inorganic film.

9. A manufacturing apparatus for a light-emitting device according to any one of claims 1 to 8 is used as the third cluster. Multiple devices that perform the photolithography process of the resist mask are designated as a second cluster. A manufacturing apparatus for a light-emitting device, comprising a plurality of apparatuses as a first cluster for performing the film formation process of the organic compound film and the first inorganic film.

10. In claim 9, A manufacturing apparatus for light-emitting devices, wherein the first cluster, the second cluster, and the third cluster are connected in that order.

11. In claim 9, Between the first cluster and the second cluster, and between the second cluster and the third cluster, A manufacturing apparatus for light-emitting devices that stores and transfers workpieces in a container controlled by an inert gas atmosphere.

12. In any one of claims 9 to 11, A manufacturing apparatus for light-emitting devices having three combinations of the first cluster, the second cluster, and the third cluster.

13. In any one of claims 9 to 12, The first cluster has a surface treatment apparatus, The surface treatment apparatus is a manufacturing apparatus for light-emitting devices that uses plasma generated from a gas containing halogens.

14. In any one of claims 9 to 13, The first cluster is a manufacturing apparatus for light-emitting devices having one or more film deposition apparatus selected from a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.

15. In any one of claims 9 to 14, The second cluster is a manufacturing apparatus for light-emitting devices, comprising a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus.

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